PD-97634 IRF6811SPbF IRF6811STRPbF DirectFET(R)plus Power MOSFET l l l l l l l l l l RoHS Compliant and Halogen Free Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for Control FET Application Compatible with existing Surface Mount Techniques 100% Rg tested Footprint compatible to DirectFET Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 25V max 16V max 2.8m @ 10V 4.1m @ 4.5V Qg Qgd Qgs2 Qrr Qoss Vgs(th) 4.2nC 1.4nC 23nC 11nC 1.6V tot 11nC D G D S ISOMETRIC SQ Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP Description The IRF6811STRPbF combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFET (R) packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET(R) package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET(R) package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6811STRPbF has low gate resistance and low charge along with ultra low package inductance providing significant reduction in switching losses. The reduced losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6811STRPbF has been optimized for the control FET socket of synchronous buck operating from 12 volt bus converters. Absolute Maximum Ratings Max. Parameter VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM EAS IAR Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V g Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current g Typical RDS(on) (m) ID = 19A 10 8 6 TJ = 125C 4 2 T J = 25C 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. www.irf.com e e f h 12 Units 25 16 19 15 74 150 32 15 VGS, Gate-to-Source Voltage (V) VDS V A mJ A 14.0 ID= 15A VDS= 20V 12.0 10.0 VDS= 13V VDS= 5.0V 8.0 6.0 4.0 2.0 0.0 0 5 10 15 20 25 30 QG Total Gate Charge (nC) Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.28mH, RG = 50, IAS = 15A. 1 01/28/11 IRF6811SPbF Static @ TJ = 25C (unless otherwise specified) Parameter Min. VGS = 0V, ID = 250A V mV/C Reference to 25C, ID = 1mA VGS = 10V, ID = 19A m VGS = 4.5V, ID = 15A BVDSS Drain-to-Source Breakdown Voltage 25 --- --- VDSS/TJ RDS(on) Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance --- --- 22 2.8 --- 3.7 VGS(th) Gate Threshold Voltage --- 1.1 4.1 1.6 5.4 2.1 VGS(th)/TJ IDSS Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current --- --- --- -6.2 --- --- --- 1.0 150 IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage --- --- --- --- 100 -100 Forward Transconductance Total Gate Charge 180 --- --- 11 --- 17 Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge --- --- --- 2.2 1.4 4.2 --- --- --- Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) --- --- 3.2 5.6 --- --- Output Charge Gate Resistance --- --- 11 0.4 --- --- Turn-On Delay Time Rise Time Turn-Off Delay Time --- --- --- 8.7 19 11 --- --- --- Fall Time Input Capacitance --- --- 5.5 1590 --- --- Output Capacitance Reverse Transfer Capacitance --- --- 460 110 --- --- Min. Typ. Max. Units gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Conditions Typ. Max. Units i i VDS = VGS, ID = 35A mV/C VDS = VGS, ID = 25A A VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125C V nA GS = 16V V S VGS = -16V VDS = 13V, ID = 15A VDS = 13V nC VGS = 4.5V ID = 15A See Fig. 2 & 15 nC VDS = 16V, VGS = 0V VDD = 13V, VGS = 4.5V ns pF ID = 15A i RG = 1.5 See Fig. 17 VGS = 0V VDS = 13V = 1.0MHz Diode Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current g (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge --- --- 40 --- --- 150 --- --- 1.0 V --- --- 18 23 27 35 ns nC A Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 15A, VGS = 0V TJ = 25C, IF = 15A di/dt = 300A/s i i Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%. 2 www.irf.com IRF6811SPbF Absolute Maximum Ratings e e f PD @TA = 25C PD @TA = 70C PD @TC = 25C TP TJ TSTG Max. Parameter Units 2.1 1.3 32 270 -40 to + 150 Power Dissipation Power Dissipation Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range W C Thermal Resistance Parameter el jl kl fl RJA RJA RJA RJC RJ-PCB Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted Linear Derating Factor e Typ. Max. Units --- 12.5 20 --- 1.0 60 --- --- 3.9 --- C/W 0.017 W/C 100 Thermal Response ( Z thJA ) D = 0.50 10 1 0.20 0.10 0.05 0.02 0.01 J 0.1 R1 R1 J 1 R2 R2 R3 R3 A 2 1 2 3 3 4 A 4 Ci= i/Ri Ci= i/Ri 0.01 0.001 1E-006 0.0001 21.298 2.002815 24.844 0.296144 3.3632 0.000886 10.411 0.027621 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 i (sec) Ri (C/W) R4 R4 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Notes: Used double sided cooling, mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized R is measured at TJ of approximately 90C. back and with small clip heatsink. Surface mounted on 1 in. square Cu (still air). www.irf.com Mounted to a PCB with small clip heatsink (still air) Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) 3 IRF6811SPbF 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.8V 2.5V 100 10 1 2.5V 60s PULSE WIDTH BOTTOM 10 2.5V 60s PULSE WIDTH Tj = 25C Tj = 150C 0.1 0.1 1 10 100 1 1000 0.1 VDS, Drain-to-Source Voltage (V) 10 100 1000 Fig 5. Typical Output Characteristics 1000 2.0 VDS = 15V 60s PULSE WIDTH ID = 19A Typical RDS(on) (Normalized) ID, Drain-to-Source Current (A) 1 V DS, Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 100 TJ = 150C TJ = 25C TJ = -40C 10 1 0.1 V GS = 10V V GS = 4.5V 1.5 1.0 0.5 1 2 3 4 45 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd Vgs = 3.5V Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = 10V 35 Typical RDS(on) ( m) Ciss Coss 1000 T J = 25C 40 C oss = C ds + C gd 10000 20 40 60 80 100 120 140 160 Fig 7. Normalized On-Resistance vs. Temperature Fig 6. Typical Transfer Characteristics 100000 -60 -40 -20 0 T J , Junction Temperature (C) VGS, Gate-to-Source Voltage (V) C, Capacitance(pF) VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.8V 2.5V Crss 100 30 25 20 15 10 5 0 10 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Typical Capacitance vs.Drain-to-Source Voltage 4 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) Fig 9. Typical On-Resistance vs. Drain Current and Gate Voltage www.irf.com IRF6811SPbF 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 100 T J = 150C 100 OPERATION IN THIS AREA LIMITED BY R DS(on) T J = 25C T J = -40C 10 1 100sec 1msec 10 10msec 1 DC T A = 25C T J = 150C 0.1 VGS = 0V Single Pulse 0 0.01 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.01 0.10 VSD, Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold Voltage (V) ID, Drain Current (A) 70 60 50 40 30 20 10 0 50 75 100 125 10.00 100.00 Fig11. Maximum Safe Operating Area 80 25 1.00 VDS, Drain-to-Source Voltage (V) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 ID = 25A ID = 250A ID = 1.0mA ID = 1.0A 0.8 0.6 -75 -50 -25 150 0 25 50 75 100 125 150 T J , Temperature ( C ) T C , Case Temperature (C) Fig 12. Maximum Drain Current vs. Case Temperature Fig 13. Typical Threshold Voltage vs. Junction Temperature EAS , Single Pulse Avalanche Energy (mJ) 140 ID 1.4A 2.2A BOTTOM 15A 120 TOP 100 80 60 40 20 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 14. Maximum Avalanche Energy vs. Drain Current www.irf.com 5 IRF6811SPbF Id Vds Vgs L VCC DUT 0 1K Vgs(th) Qgs1 Qgs2 Fig 15a. Gate Charge Test Circuit Qgd Qgodr Fig 15b. Gate Charge Waveform V(BR)DSS 15V DRIVER L VDS D.U.T VGS RG 20V tp + - VDD IAS I AS 0.01 tp Fig 16a. Unclamped Inductive Test Circuit VDS VGS RG RD Fig 16b. Unclamped Inductive Waveforms VDS 90% D.U.T. + - VDD V10V GS Pulse Width 1 s Duty Factor 0.1 % Fig 17a. Switching Time Test Circuit 6 A 10% VGS td(on) tr td(off) tf Fig 17b. Switching Time Waveforms www.irf.com IRF6811SPbF D.U.T Driver Gate Drive + + - * D.U.T. ISD Waveform Reverse Recovery Current + RG * * * * di/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - D= Period P.W. + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Current Inductor Curent - Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET(R) Power MOSFETs DirectFET(R)plus Board Footprint, SQ Outline (Small Size Can, Q-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. G =G ATE D = D R A IN S=SO URCE D D G D www.irf.com S D 7 IRF6811SPbF DirectFET(R)plus Outline Dimension, SQ Outline (Small Size Can, Q-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. D IM E N S IO N S IM P E R IA L M E T R IC MAX M IN C O D E M IN MAX 4.8 5 A 0.1 8 7 0.1 9 1 4 .7 5 3.9 5 0.1 4 6 B 3 .7 0 0.1 5 6 2 .85 0.1 0 8 C 0.1 1 2 2 .7 5 0.4 5 D 0.0 1 4 0.0 1 8 0 .3 5 0.5 2 0.0 1 9 E 0 .4 8 0.0 2 0 0.8 2 0.0 3 1 F 0.0 3 2 0 .7 8 0.9 2 G 0.0 3 5 0.0 3 6 0 .8 8 0.8 2 0.0 3 1 H 0 .7 8 0.0 3 2 N /A N /A J N /A N /A 0.9 7 K 0.0 3 7 0.0 3 8 0 .9 3 2 .10 L 0.0 7 9 2 .0 0 0.0 8 3 M 0.0 2 3 0 .5 35 0.5 9 5 0.0 2 1 R 0 .0 20 0.0 8 0 0.0 0 08 0.0 0 31 0.1 7 P 0.0 0 3 0 .0 8 0.0 0 7 DirectFET(R)plus Part Marking GATE MARKING LOGO PART NUMBER BATCH NUMBER DATE CODE Line above the last character of the date code indicates "Lead-Free" Note: For the most current drawing please refer to IR website at http://www.irf.com/package 8 www.irf.com IRF6811SPbF DirectFET(R)plus Tape & Reel Dimension (Showing component orientation). E A B D C F G H NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6811STRPBF). For 1000 parts on 7" reel, order IRF6811S TR1PBF S TANDARD OPTION METRIC CODE MIN MAX A 330.0 N.C B 20.2 N.C C 12.8 13.2 D 1.5 N.C E 100.0 N.C F N.C 18.4 G 12.4 14.4 H 11.9 15.4 REEL DIME NSIONS (QTY 4800) TR1 OPTION IMP ERIAL METRIC MIN MIN MAX MA X 12.992 177.77 N.C N.C 0.795 19.06 N.C N.C 0.504 13.5 0.520 12.8 0.059 1.5 N.C N.C 3.937 58.72 N.C N.C N.C N.C 0.724 13.50 0.488 11.9 0.567 12.01 0.469 11.9 0.606 12.01 (QTY 1000) IMPERIAL MIN MAX 6.9 N.C 0.75 N.C 0.53 0.50 0.059 N.C 2.31 N.C N.C 0.53 0.47 N.C 0.47 N.C LOADED TAPE FEED DIRECTION A H F C D B E NOTE: CONTROLLING DIMENSIONS IN MM CODE A B C D E F G H G DIMENSIONS METRIC IMPERIAL MIN MAX MIN MAX 0.311 7.90 0.319 8.10 0.154 4.10 3.90 0.161 0.469 11.90 0.484 12.30 0.215 5.55 5.45 0.219 0.158 4.00 0.165 4.20 0.197 5.20 5.00 0.205 0.059 1.50 N.C N.C 0.059 1.60 1.50 0.063 Note: For the most current drawing please refer to IR website at http://www.irf.com/package Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.01/2011 www.irf.com 9