BC857AT, BT, CT PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: BC847AT BC857BT BC857CT NEW PRODUCT Features * * * * Epitaxial Die Construction Complementary NPN Types Available (BC847AT, BT, CT) Ultra-Small Surface Mount Package Also Available in Lead Free Version SOT-523 A C Mechanical Data * * * * * * * * * Case: SOT-523, Molded Plastic Case material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Also Available in Lead Free Plating (Matte Tin Finish). Please see Ordering Information, Note 4, on Page 2 Terminal Connections: See Diagram Weight: 0.002 grams (approx.) Marking Codes (See Table Below & Diagrams on Page 2) Ordering & Date Code Information: See Page 2 Type Marking BC857AT 3V BC857BT 3W BC857CT 3G Maximum Ratings B C TOP VIEW Dim Min Max Typ A 0.15 0.30 0.22 B 0.75 0.85 0.80 C 1.45 1.75 1.60 D 3/4 3/4 0.50 G G 0.90 1.10 1.00 H H 1.50 1.70 1.60 J 0.00 0.10 0.05 K 0.60 0.80 0.75 E B K M J D L L 0.10 0.30 0.22 M 0.10 0.20 0.12 N 0.45 0.65 0.50 a 0 8 3/4 All Dimensions in mm @ TA = 25C unless otherwise specified Symbol Value Unit Collector-Base Voltage Characteristic VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5.0 V IC -100 mA Collector Current Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: Pd 150 mW RqJA 833 C/W Tj, TSTG -55 to +150 C 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30275 Rev. 4 - 2 1 of 3 www.diodes.com BC857AT, BT, CT a Diodes Incorporated NEW PRODUCT Electrical Characteristics @ TA = 25C unless otherwise specified Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (Note 2) Characteristic V(BR)CBO -50 -- -- V IC = 10mA, IB = 0 Collector-Emitter Breakdown Voltage (Note 2) V(BR)CEO -45 -- -- V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage (Note 2) V(BR)EBO -5 -- -- V IE = 1mA, IC = 0 hFE 125 220 420 -- 290 520 250 475 800 -- VCE = -5.0V, IC = -2.0mA Collector-Emitter Saturation Voltage (Note 2) VCE(SAT) -- -- -- -300 -650 mV IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA Base-Emitter Saturation Voltage (Note 2) VBE(SAT) -- -- -700 -900 -- -- mV IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA Base-Emitter Voltage (Note 2) VBE(ON) -600 -- -- -- -750 -820 mV VCE = -5.0V, IC = -2.0mA VCE = -5.0V, IC = -10mA ICBO -- -- -- -- -15 -4.0 NA A VCB = -30V VCB = -30V, TA = 150C fT 100 -- -- MHz VCE = -5.0V, IC = -10mA, f = 100MHz Output Capacitance COB -- -- 4.5 pF VCB = -10V, f = 1.0MHz Noise Figure NF -- -- 10 dB IC = -0.2mA, VCE = -5.0Vdc, RS = 2.0KW, f = 1.0KHz, BW = 200Hz DC Current Gain (Note 2) Current Gain A B C Collector-Cutoff Current (Note 2) Gain Bandwidth Product Ordering Information Notes: Test Condition (Note 3) Device Packaging Shipping BC857AT-7 SOT-523 3000/Tape & Reel BC857BT-7 SOT-523 3000/Tape & Reel BC857CT-7 SOT-523 3000/Tape & Reel 2. Short duration pulse test used to minimize self-heating effect. 3. For Packaging Details: go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 4. For Lead Free version (with Lead Free terminal finish) part number, please add "-F" suffix to part number above. Example: BC857CT-7-F. Marking Information XX = Product Type Marking Code (See Page 1), e.g. 3V = BC857AT YM = Date Code Marking Y = Year (ex: N = 2002) M = Month (ex: 9 = September) XXYM Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30275 Rev. 4 - 2 2 of 3 www.diodes.com BC857AT, BT, CT 0.5 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) PD, POWER DISSIPATION (mW) 200 150 100 50 IC IB = 10 0.4 0.3 TA = 25C TA = 150C 0.2 0.1 TA = -50C 0 0 0 25 50 75 100 125 150 200 175 0.1 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature 10 1000 100 1000 TA = 150C 100 1 IC, COLLECTOR CURRENT (mA) Fig. 2 Collector Emitter Saturation Voltage vs. Collector Current VCE = 5V TA = 25C TA = -50C 10 ft, GAIN BANDWIDTH PRODUCT (MHz) 1000 hFE, DC CURRENT GAIN NEW PRODUCT 250 VCE = 5V 100 10 1 10 1 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs. Collector Current DS30275 Rev. 4 - 2 3 of 3 www.diodes.com 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Gain Bandwidth Product vs Collector Current BC857AT, BT, CT