C o l l m e r Semiconductor MOS-FET, High Voltage Diodes N-Channel Silicon Power MOS-FET c F-I Series = Low RDS(ON) c F-II Series = VGS 30 V, Reduced Turn Off Time c FAP-II Series = High Avalanche Ruggedness c F-III Series = Logic Level, High g fs c FAP-III = Logic Level, High Avalanche Ruggedness c FAP-IIS = VGS 35 V, VGS(th) 4.0 0.5 V Characteristics Ratings Mfr.Os Type 2SJ314-01L 2SJ314-01S 2SK2248-01L 2SK2248-01S 2SK2687-01 2SK2893-01 2SK2900-01 2SK2690-01 2SK2906-01 2SK3270-01 2SK3271-01 2SK3216-01 2SK3217-01MR 2SK3218-01 2SK3219-01MR 2SK2521-01 2SK3262-01MR 2SK900 2SK902 2SK1017-01 2SK2021-01 2SK2642-01MR 2SK2757-01 2SK725 2SK1941-01R 2SK2646-01 2SK956-01 2SK2648-01 2SK2654-01 2SK2082-01 2SK1986-01 2SK2258-01 Series FAP-III FAP-III FAP-III FAP-III FAP-III FAP-IIIB FAP-IIIBH FAP-III FAP-IIIBH Trench Trench FAP-IIIBH FAP-IIIBH FAP-IIIBH FAP-IIIBH FAP-II FAP-IIIB F-I F-I F-II FAP-IIA FAP-IIS FAP-IIS F-I FAP-IIA FAP-II FAP-II FAP-IIS FAP-IIS FAP-IIA FAP-II FAP-II c FAP-IIA = Reduced Turn Off Time c FAP-IIIBH = High Speed Non Logic c FAP-IIIB = Logic Level, VGS(th) 1.5 0.5 V VDSS (V) ID (A) PD (W) RDS(ON) (1/2) (Max.) VGS=10V Ciss (pf) Coss (pf) ton (ns) toff (ns) Package VGS=4V 60 60 30 30 30 30 60 60 60 60 60 100 100 150 150 200 200 250 250 450 500 500 500 500 600 800 800 800 900 900 1000 1000 5.0 5.0 35.0 35.0 50.0 100.0 45.0 80.0 100.0 80.0 100.0 45.0 50.0 35.0 40.0 18.0 20.0 12.0 30.0 20.0 5.0 15.0 10.0 15.0 16.0 4.0 9.0 9.0 8.0 9.0 4.0 4.0 20 20 60 60 60 150 60 125 150 135 155 80 70 80 70 50 45 80 150 150 60 50 80 125 100 80 150 150 150 150 80 100 0.480 0.480 0.037 0.037 0.017 0.007 N 0.017 N N N N N N N N 0.15 N N N N N N N N N N N N N N N 0.300 0.300 0.022 0.022 0.010 0.004 0.140 0.010 0.007 0.006 0.006 0.026 0.025 0.048 0.043 0.180 0.100 0.300 0.100 0.350 1.600 0.550 0.900 0.380 0.550 4.000 1.500 1.500 2.000 1.400 3.600 3.600 750 750 2630 2630 4130 9900 3450 5250 8100 9000 9000 4800 4800 3900 3980 1650 2550 1800 3900 3300 1500 2100 950 4000 4950 450 2100 1200 1200 3300 1950 1950 300 300 1200 1200 1950 4950 1370 1870 3150 1250 1250 1140 1140 800 830 330 435 300 900 480 130 380 180 500 470 75 300 180 180 320 150 150 53 53 188 188 103 260 110 143 400 250 250 186 230 158 174 150 85 75 200 375 55 220 25 130 165 20 425 30 30 130 55 55 270 270 720 720 520 1270 200 450 470 285 285 240 265 270 263 150 520 260 1000 740 100 230 60 440 420 50 690 95 95 320 160 160 K-PACK L K-PACK S K-PACK L K-PACK S TO220 TO3P TO220 TO3P TO3P TO-220 TO3P TO220 TO-220F15 TO220 TO-220F15 TO220 TO-220F15 TO220 TO3P TO3P TO220 TO220F15 TO220 TO3P TO3PF TO220 TO3P TO3P TO3P TO3P TO220 TO3P Fast Recovery High Voltage Silicon Rectifiers Mfr.Os Type Repetitive Peak Reverse Voltage VRRM kV ESJC30-08 CS57-04A CS54-08A CS52-12A CS52-14A CS56-24 12 4 8 12 14 24 Maximum Reverse Current Repetitive (at VRRM, Ta = 25C) IRRM Maximum Junction Capacitance (at VRRM = 0V, Ta = 25C) @ 1 MHz Volts A pF 16.0 15.0 30.0 45.0 51.0 75.0 10 1 1 1 1 1 N 2 2 1 1 1 Non-Repetitive Peak Surge Current IFSM** Maximum Forward Voltage Drop (at 1 mA, Ta = 25C) VFM mA A 300 25 25 10 10 10 15.0 1.0 1.0 0.5 0.5 0.5 Average Forward Current Io* Notes: *Single phase; half sine wave in oil bath or filled epoxy at ambient temperature 25C. **1/2 cycle, 60 Hz at full load. Reverse Recovery Time: OAO Type N 80 nsec max. @ Ta = 25C, IF = 2 mA, IR = 1 mA; Non OAO Type N 100 nsec max. @ Ta = 25C, IF = 2 mA, IR = 1 mA. Storage and Operating Junction Temperature, Tj: 65C to +150C. Packaging: Bulk or tape and reel available (please specify). Same Day Shipments For Product In Stock ALLIED c 803 13