HUF76145S3ST - Fairchild Semiconductor

HUF76145P3, HUF76145S3S

75A, 30V, 0.0045 Ohm, N-Channel, Logic

Level UltraFET Power MOSFETs

These N-Channel power MOSFETs

are manufactured using the

innovative UltraFET™ process.

This advanced pr oces s t echnology

achieves the lowest possible on-resistance per silicon area,

resulting in outstandi ng p erformance. T his device is c apable

of withstanding high ene rgy in the avalan che mode an d the

diode exhibits very low reverse recovery time and stored

charge. It was designed for use in applications where power

efficiency is important, such as switching regulators,

switching converters, motor drivers, relay drivers,

low -voltage b us switches, and power managem ent in

portable and battery-operated products.

Formerly developmental type TA76145.

Symbol

Features

• Logic Level G ate Drive

• 75A, 30V

• Ult ra Low On-Resistance, rDS(ON) = 0.0045Ω

• Temperature Com pensating PSPICE® Model

• Temperature Compensating SABER™ Model

• Thermal Im ped anc e SP ICE Mo de l

• Thermal Im ped anc e SA BER Mo del

• Peak Current vs Pulse Width C urve

• UIS Rating Curve

• Related Literature

- TB334, “G uid eli ne s for Solde ring Surface Mount

Components to PC Boards”

Packaging JEDEC TO-220AB

JEDEC TO-263AB

Ordering Information

PART NUMBER PACKAGE BRAND

HUF76145P3 TO-220AB 76145P

HUF76145S3S TO-263AB 76145S

NOTE: When ordering, use the entire part number . Add the suffix T to

obtain the TO-263AB variant in tape and reel, e.g., HUF76145S3ST.

DRAIN

SOURCE

GATE

DRAIN

(FLANGE)

GATE

SOURCE

DRAIN

(FLANGE)

Data Sheet December 2001

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified UNITS

Drain to Source Vo ltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 30 V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 30 V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±16 V

Drain Current

Continuous (TC = 25oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Continuous (TC = 100oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Continuous (TC = 100oC, VGS = 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Figure 4

Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Figure 6

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 270

2.17 W

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -40 to 150 oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300

260

CAUTION: Str esses above those l isted in “A bsolute Maximu m Rating s” may cause per manent d amage to t he device. This is a str ess on ly rating and operation o f the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. TJ = 25oC to 150oC.

Electrical Specifications TA = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

OFF STATE SPECIFICATIONS

Drain to Source B reakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 12) 30 - - V

Zero Gate Vo ltage Drain C urrent IDSS VDS = 25V, VGS = 0V - - 1 µA

VDS = 25V, VGS = 0V, TC = 150oC - - 250 µA

Gate to Source Leakage Current IGSS VGS = ±16V - - ±100 nA

ON STATE SPECIFICATIONS

Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 11) 1 - 3 V

Drain to Source On Resist ance rDS(ON) ID = 75A, VGS = 10V (Figures 9, 10) - 0.0035 0.0045 Ω

ID = 75A, VGS = 5V (Figure 9) - 0.0043 0.0058 Ω

ID = 75A, VGS = 4.5V (Figure 9) - 0.0046 0.0065 Ω

THERMAL SPECIFICATIONS

Thermal Resistance Junction to Case RθJC (Figure 3) - - 0.46 oC/W

Thermal Resistance Junction to Ambient RθJA TO-220 and TO-263 - - 62 oC/W

SWITCHING SPECIFICATIONS (VGS = 4.5V)

Turn-On Time tON VDD = 15V, ID ≅ 75A,

RL = 0.20Ω, VGS = 4.5V,

RGS = 2.5Ω

(Figure 15)

- - 255 ns

Turn-On De lay Time td(ON) -26-ns

Rise Time tr- 145 - ns

Turn-Off De lay Time td(OFF) -35-ns

Fall Tim e tf-39-ns

Turn-Off T ime tOFF - - 110 ns

HUF76145P3, HUF76145S3S

SWITCHING SPECIFICATIONS (VGS = 10V)

Turn-On Time tON VDD = 15V, ID ≅ 75A,

RL = 0.20Ω, VGS = 10V,

RGS = 2.2Ω

(Figure 16)

- - 110 ns

Turn-On De lay Time td(ON) -16-ns

Rise Time tr-57-ns

Turn-Off De lay Time td(OFF) -53-ns

Fall Tim e tf- 38 - ns

Turn-Off T ime tOFF - - 135 ns

GATE CHARGE SPECIFICATIONS

Total Gate Charge Qg(TOT) VGS = 0V to 10V VDD = 15V,

ID ≅ 75A,

RL = 0.20Ω

Ig(REF) = 1.0mA

(Figure 14)

- 130 156 nC

Gate Charge at 5V Qg(5) VGS = 0V to 5 V - 73 88 nC

Threshold Gate Charge Qg(TH) VGS = 0V to 1V - 4.65 5.6 nC

Gate to Source Gate C harge Qgs - 12.30 - nC

Gate to Drain “Miller” Charge Qgd - 40.00 - nC

CAPACITANCE SPECIFICATIONS

Input Capacitance CISS VDS = 25V, VGS = 0V,

f = 1MHz

(Figure 13)

- 4900 - pF

Output Capacitance COSS - 2520 - pF

Reverse Transfer Capacitance CRSS - 560 - pF

Electrical Specifications TA = 25oC, Unless Otherwise Specified (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to D rain Diode Volt age VSD ISD = 75A - - 1.25 V

Reverse Recovery Time trr ISD = 75A, dISD/dt = 100A/µs - - 115 ns

Reverse Recovered Charge QRR ISD = 75A, dISD/dt = 100A/µs - - 255 nC

Typical Performance Curves

FIGURE 1. NORMALIZED PO WER DISSIPATION vs CASE

TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

TA, AMBIENT TEMPERATURE (oC)

POWER DISSIPATION MULTIPLIER

00255075100 15

0.2

0.4

0.6

0.8

1.0

1.2

125 0

25 50 75 100 125 150 175

ID, DRAIN CURRENT (A)

TC, CASE TEMPERATURE (oC)

VGS = 10V

VGS = 4.5V

HUF76145P3, HUF76145S3S

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

FIGURE 4. PEAK CURRENT CAPABILITY

FIGURE 5. FORWARD BIAS SAFE OPERATING AREA NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.

FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING

CAPABILITY

Typical Performance Curves (Continued)

0.1

10-5 10-4 10-3 10-2 10-1 100101

0.01

t, RECTANGULAR PULSE DURATION (s)

ZθJC, NORMALIZED

SINGLE PULSE NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x ZθJC x RθJC + TC

PDM

t1t2

DUTY CYCLE - DESCENDING ORDER

0.5

0.2

0.1

0.05

0.01

0.02

THERMAL IMPEDANCE

100

1000

10-5 10-4 10-3 10-2 10-1 100101

5000

IDM, PEAK CURRENT ( A)

t, PULSE WIDTH (s)

TRANSCONDUCTANCE

MAY LIMIT CURRENT

IN THIS REGION

TC = 25oC

I = I25 175 - TC

150

FOR TEMPERATURES

ABOVE 25oC DERATE PEAK

CURRENT AS FOLLOWS:

VGS = 10V

VGS = 5V

100

1000

110100

100µs

10ms

1ms

VDS, DRAIN TO SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

LIMITED BY rDS(ON)

AREA MAY BE

OPERATION IN THIS

TJ = MAX RATED TC = 25oC

SINGLE PULSE

11010

100

0.1

1000

IAS, AVALANCHE CURRENT (A)

tAV, TIME IN AVALANCHE (m s)

tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)

If R = 0

If R ≠ 0

tAV = (L/R)ln[(IAS*R)/(1.3*RATED B VDSS - VDD) +1]

STARTING TJ = 25oC

STARTING TJ = 150oC

0.01

HUF76145P3, HUF76145S3S

FIGURE 7. TRANSFE R CHARACTERISTICS FIGURE 8. SATURATION CHARACTERISTICS

FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT FIGURE 10. NORMALIZED DRAIN TO S OURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

FIGURE 11. NORMALIZED GATE THRESHOLD V OLTA GE vs

JUNCTION TEMPERATURE FIGURE 12. NORMALIZED DRAIN T O SOURCE BREAKDOW N

VOLTAGE vs JUNCTION TEMPERATURE

Typical Performance Curves (Continued)

0 23451

120

ID, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

150oC-40oC

25oC

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

VDD = 1 5V

150

0234

ID, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 3.5V

VGS = 3V

150

120

VGS = 4V

VGS = 4.5V

VGS = 5V

VGS = 10V

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

TC = 25oC

VGS, GATE TO SOURCE VOLTAGE (V)

26108

ID = 75A

ID = 50A

ID = 25A

rDS(ON), DRAIN TO SOURCE

ON RESISTANCE (mΩ)

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

0.6

1.2

1.5

1.8

-60 0 60 120

NORMALIZED DRAIN TO SOURCE

TJ, JUNCTION TEMPERATURE (oC)

ON RESISTANCE

180

0.9

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

VGS = 10V, ID = 75A

-60 0 60 120

0.4

0.6

1.0

1.4

NORMALIZED GATE

TJ, JUNCTION TEMPERATURE (oC)

THRESHOLD VOLTAGE

VGS = VDS, ID = 250µA

180

0.8

1.2

1.1

1.0

0.9

-60 0 60 120

TJ, JUNCTION TEMPERATURE (oC)

NORMALIZED DRAIN TO SOURCE

BREAKDOWN VOLTAG E

ID = 250µA

180

HUF76145P3, HUF76145S3S

FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.

FIGURE 14. GATE CHARGE W AVEFO RMS FOR CONSTANT

GATE CURRENT

FIGURE 15. SWITCHING TIME vs GATE RESISTANCE FIGURE 16. SWITCHING TIME vs GATE RESISTANCE

Typical Performance Curves (Continued)

COSS

8000

4000

005 15 25

C, CAPACITANCE (pF)

6000

VDS, DRAIN TO SOURCE VOLTAGE (V)

2000

CISS

CRSS

10 20

VGS = 0V, f = 1MHz

CISS = CGS + CGD

CRSS = CGD

COSS ≈ CDS + CGD

VGS, GATE TO SOURCE VOLTAGE (V)

VDD = 15V

120 1600

Qg, GATE CHARGE (nC)

ID = 75A

ID = 50A

ID = 25A

WAVEFORMS IN

DESCENDING ORDER:

200

20 30 40 500

1200

800

400

010

SWITCHING TIME (ns)

RGS, GATE TO SOURCE RESISTANCE (Ω)

VGS = 4.5V, VDD = 15V, ID = 75A, RL= 0.20Ω

1000

600

td(OFF)

td(ON)

400

20 30 40 500

1000

800

600

010

SWITCHING TIME (ns)

RGS, GATE TO SOURCE RESISTANCE (Ω)

VGS = 10V, VDD = 15V, ID = 75A, RL= 0.20Ω

200 td(ON)

td(OFF)

Test Circuits and Waveforms

FIGURE 17. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 18. UNCLAMPED ENERGY WAVEFORMS

VGS

0.01Ω

IAS

VDS

VDD

DUT

VARY tP TO OBTAIN

REQUIRED PEAK IAS

VDD

VDS

BVDSS

IAS

tAV

HUF76145P3, HUF76145S3S

FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS

FIGURE 21. SWITCHING TIME TEST CIRCUIT FIGURE 22. SWITCHIN G TIME WAVEFORM

Test Circuits and Waveforms (Continued)

VGS +

VDS

VDD

DUT

IG(REF)

VDD

Qg(TH)

VGS = 1V

Qg(5)

VGS = 5V

Qg(TOT)

VGS = 10

VDS

VGS

IG(REF)

VGS

RGS DUT

-VDD

VDS

VGS

tON

td(ON)

90%

10%

VDS 90%

10%

td(OFF)

tOFF

90%

50%

10% PULSE WIDTH

VGS

HUF76145P3, HUF76145S3S

PSPICE Ele ctrical Model

SUBCKT HUF761 45 2 1 3 ; rev 6 Apr98

CA 12 8 7.75e-9

CB 15 14 7.45e-9

CIN 6 8 4.47e-9

DBODY 7 5 DBODYMOD

DBRE AK 5 11 D B REAK MOD

DPLCAP 10 5 DPLCAPMOD

EBREAK 11 7 17 18 33.5

EDS 14 8 5 8 1

EGS 13 8 6 8 1

ESG 6 10 6 8 1

EVTH R ES 6 21 19 8 1

EVTEMP 20 6 18 22 1

IT 8 17 1

LDRA IN 2 5 1.00 e- 9

LGATE 1 9 2.60e-9

LSOURCE 3 7 1.10e-9

KGATE LSOURCE LGATE 0.0085

MMED 16 6 8 8 MMEDMOD

MSTRO 16 6 8 8 MSTROMOD

MWEAK 16 21 8 8 MWEAKMOD

RBREAK 17 18 RBREAKMOD 1

RDRAIN 50 16 RDRAINMOD 0.59e-3

RGATE 9 20 0.898

RLDRAIN 2 5 10

RLGATE 1 9 26

RLSOURCE 3 7 11

RSLC1 5 51 RSLCMOD 1e-6

RSLC2 5 50 1e3

RSOURCE 8 7 RSOURCEMOD 2.20e-3

RVTHRES 22 8 RVTHRESMOD 1

RVTE M P 18 19 RVTE MPMOD 1

S1A 6 12 13 8 S1AMOD

S1B 13 12 13 8 S1BMO D

S2A 6 15 14 13 S2AMOD

S2B 13 15 14 13 S2BMO D

VBAT 22 1 9 DC 1

ESL C 51 50 VAL UE={( V(5,51 )/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*750),3))}

.MODEL DBOD YMOD D (IS = 6.01e-12 IKF = 20 RS = 1. 72e- 3 TRS1 = 1.01e-3 TRS2 = 1.21e -6 CJO = 8.41e-9 TT = 4.84e-8 M = 0.45 )

.MODEL DBREAKMOD D (RS = 6.80e- 2TRS1 = 1.12e- 3TRS2 = 1.25e-6 )

.MODEL DPLCAPMOD D (CJO = 4.25e- 9IS = 1e-3 0N = 10 M = 0.61)

.MODEL MMEDMOD NMOS (VTO = 1.74 KP = 5.00 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 0.898)

.MODE L MST R OMOD NMO S (VTO = 2.10 KP = 245 IS = 1e-3 0 N = 1 0 T OX = 1 L = 1 u W = 1u)

.MODEL MWEAKMOD NMOS (VTO = 1.48 KP = 0.10 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 8.98 RS= 0.1)

.MODEL RBREAK MOD RES (TC1 = 1.01e- 3TC2 = 1.07e-7)

.MODEL RDRAINMOD RES (TC1 = 1.58e-2 TC2 = 3.76e-5)

.MODEL RSLCMOD RES (TC1 = 1.02e-4 TC2 = -1.13e-4)

.MODEL RSOURCEMOD RES (TC1 = 0 TC2 = 0)

.MODEL RVTHRESMOD RES (TC1 = -2.73e-3 TC2 = -1.01e-5)

.MODEL RVTEMPMO D RE S (TC1 = -1.50e- 3TC2 = 1.25e-6)

.MODEL S1AMOD VS WITCH (RON = 1e-5 ROFF = 0.1 VON = -6.00 VOFF= -1.50)

.MODEL S1BMOD VS WITCH (RON = 1e-5 ROFF = 0.1 VON = -1.50 VOFF= -6.00)

.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.00 VOFF= 0.45)

.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.45 VOFF= 0.00)

.ENDS

NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power M OSFET F e a turi ng Glo bal

Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley.

RBREAK

RVTEMP

VBAT

RVTHRES

17 18

S1A

S1B

S2A

S2B

CA CB

EGS EDS

814

MWEAK

EBREAK DBODY

RSOURCE

SOURCE

LSOURCE

RLSOURCE

CIN

RDRAIN

EVTHRES 16

MMED

MSTRO

DRAIN

LDRAIN

RLDRAIN

DBREAK

DPLCAP

ESLC

RSLC1

RSLC2

GATE RGATE EVTEMP

ESG

LGATE

RLGATE 20

HUF76145P3, HUF76145S3S

SABER Electrical Model

REV 6 Apr 1998

template huf76145 n2, n1, n3

electrical n2, n1, n3

{

var i iscl

d..model dbodymod = (is = 6.01e-12, cjo = 8.41e -9, tt = 4.84e-8, m = 0.4 5)

d..model dbreakmod = ()

d..model dplcapmod = (cjo = 4.25e-9, is = 1e-30, n = 10, m = 0.61)

m..model mmedmod = ( type=_n, vto = 1.74, kp = 5.00, is = 1e-30, tox = 1)

m..model mstrongmod = (type=_n, vto = 2.10, kp = 245, is = 1e-30, tox = 1)

m..model mweakmod = (type=_n, vto = 1.48, kp = 0.10, is = 1e-30, tox = 1)

sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -6.0, voff = -1.5)

sw_vcsp..model s1bmod = (ron = 1e-5, roff = 0.1, von = -1.5, voff = -6.0)

sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = 0.0, voff = 0.45)

sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.45, voff = 0.0)

c.ca n12 n8 = 7.75e-9

c.cb n15 n14 = 7.45e-9

c.cin n6 n8 = 4.47e-9

d.dbody n7 n71 = model=dbodymod

d.dbreak n72 n11 = model=dbreakmod

d.dplcap n10 n5 = model=dplcapmod

i.it n8 n17 = 1

l.ldrain n2 n5 = 1.00e-9

l.lgate n1 n9 = 2.60e-9

l.lsourc e n3 n7 = 1.10e-9

k.k1 i(l.lgate) i(l.lsource) = l(l.lgate), l(l.lsource), 0.0085

m.mmed n16 n6 n8 n8 = model=mmedmod, l = 1u, w = 1u

m.mstrong n16 n6 n8 n8 = model=mstrongmod, l = 1u, w = 1u

m.mweak n16 n21 n8 n8 = model=mweakmod, l = 1u, w = 1u

res.rbreak n17 n18 = 1, tc1 = 1.01e-3, tc2 = 1.07e-7

res.rdbody n71 n5 = 1.72e-3, tc1 = 1.01e-3, tc2 = 1.21e-6

res.rdbreak n72 n5 = 6.80e-2, tc1 = 1.12e-3, tc2 = 1.25e-6

res.rdrain n50 n16 = 0.59e-3, tc1 = 1.58e-2, tc2 = 3.76e- 5

res. rgate n9 n20 = 0.898

res.r ldrain n2 n5 = 10

res. rl g ate n1 n9 = 26

res.rlsource n3 n7 = 11

res.rslc1 n5 n51 = 1e-6, tc1 = 1.02e-4, tc2 = -1.13e-4

res.r slc2 n5 n50 = 1e3

res.rsource n8 n7 = 2.20e-3, tc1 = 0, tc2 = 0

res.rvtemp n18 n19 = 1, tc1 = -1.50e-3, tc2 = 1.25e-6

res.rvthres n22 n8 = 1, tc1 = -2.73e-3, tc2 = -1.01e-5

spe.ebreak n11 n7 n17 n18 = 33.50

spe.e ds n14 n8 n5 n8 = 1

spe.e gs n13 n8 n6 n8 = 1

spe.esg n6 n10 n6 n8 = 1

spe.evtemp n20 n6 n18 n22 = 1

spe.evthres n6 n21 n19 n8 = 1

sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod

sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod

sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod

sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod

v.vbat n22 n19 = dc = 1

equations {

i (n51->n50) + = iscl

iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+ab s(v(n5,n 51))))*((abs(v(n5,n51)*1e6/750))** 3))

}

RBREAK

RVTEMP

VBAT

RVTHRES

17 18

S1A

S1B

S2A

S2B

CA CB

EGS EDS

814

MWEAK

EBREAK DBODY

RSOURCE

SOURCE

LSOURCE

RLSOURCE

CIN

RDRAIN

EVTHRES 16

MMED

MSTRO

DRAIN

LDRAIN

RLDRAIN

DBREAK

DPLCAP

ISCL

RSLC1

RSLC2

GATE RGATE EVTEMP

ESG

LGATE

RLGATE 20

RDBODY

RDBREAK

HUF76145P3, HUF76145S3S

SPICE Thermal Model

REV Aug 2000

HUF76145T

CTHERM1 th 6 6.3e-3

CTHERM2 6 5 1 .5e-2

CTHERM3 5 4 2 .0e-2

CTHERM4 4 3 3 .0e-2

CTHERM5 3 2 8 .0e-2

CTHERM6 2 tl 1.5e-1

RTHERM1 th 6 5.0e-3

RTHERM2 6 5 1 .8e-2

RTHERM3 5 4 5 .0e-2

RTHERM4 4 3 8 .5e-2

RTHERM5 3 2 1 .0e-1

RTHERM6 2 tl 1.1e-1

SABER Thermal Model

SABER thermal model HUF76145T

template thermal_model th tl

thermal_c th, tl

{

ctherm.ctherm 1 t h 6 = 6.3e-3

ctherm.ctherm 2 6 5 = 1.5e- 2

ctherm.ctherm 3 5 4 = 2.0e- 2

ctherm.ctherm 4 4 3 = 3.0e- 2

ctherm.ctherm 5 3 2 = 8.0e- 2

ctherm.ctherm6 2 tl = 1.5e-1

rtherm.rtherm1 th 6 = 5.0e-3

rtherm.rtherm2 6 5 = 1.8e-2

rtherm.rtherm3 5 4 = 5.0e-2

rtherm.rtherm4 4 3 = 8.5e-2

rtherm.rtherm5 3 2 = 1.0e-1

rtherm.rtherm6 2 t l = 1.1e- 1

}

RTHERM4

RTHERM6

RTHERM5

RTHERM3

RTHERM2

RTHERM1

CTHERM4

CTHERM6

CTHERM5

CTHERM3

CTHERM2

CTHERM1

th JUNCTION

CASE

HUF76145P3, HUF76145S3S

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