DL110/D REV 12 Wireless RF, IF and Transmitter Device Data Contents at a Glance Wireless RF, IF and Transmitter Device Data Device Index (Alphanumeric) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix Chapter One Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1-1 Chapter Two RF Front End ICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.0-1 Section One: Selector Guide, Section Two: Data Sheets Chapter Three RF/IF Subsystem ICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0-1 Section One: Selector Guide, Section Two: Data Sheets Chapter Four Frequency Synthesis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0-1 Section One: Selector Guide, Section Two: Data Sheets Chapter Five RF Discrete Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0-1 Section One: Selector Guide, Section Two: Data Sheets Chapter Six RF Amplifier Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.0-1 Section One: Selector Guide, Section Two: Data Sheets Chapter Seven RF CATV Distribution Amplifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.0-1 Section One: Selector Guide, Section Two: Data Sheets Chapter Eight Tape and Reel Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.1-1 Chapter Nine Packaging Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9.1-1 Chapter Ten Applications and Product Literature . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.1-1 Chapter Eleven Motorola Distributor and Worldwide Sales Offices . . . . . . . . . . . . . . . 11.1-1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA i MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ii Wireless RF, IF and Transmitter Device Data Table of Contents Page Foreword . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v About This Revision . . . . . . . . . . . . . . . . . . . . . . . . . . vi Page Chapter Three RF/IF Subsystem ICs . . . . . . . . . . . 3.0-1 Data Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . vi On-Line Access to Wireless RF, IF and Transmitter Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . vii Device Index (Alphanumeric) . . . . . . . . . . . . . . . . . ix Chapter One Selector Guide Section One: Selector Guide . . . . . . . 3.1-1 Cordless Phone Subsystems . . . . . . . . . . . . 3.1-2 Tranceivers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1-2 Miscellaneous Functions . . . . . . . . . . . . . . . . . 3.1-3 ADCs/DACs . . . . . . . . . . . . . . . . . . . . . . . . . 3.1-3 . . . . . . . . . . . . . . . . . . . 1.1-1 Encoders/Decoders . . . . . . . . . . . . . . . . . . . 3.1-3 RF Front End ICs . . . . . . . . . . . . . . . . . . . . . . . 1.1-3 RF/IF Subsystems . . . . . . . . . . . . . . . . . . . . . . 1.1-7 Frequency Synthesis . . . . . . . . . . . . . . . . . . . 1.1-11 RF Discrete Transistors . . . . . . . . . . . . . . . . . 1.1-15 RF Amplifier Modules/ICs . . . . . . . . . . . . . . . 1.1-33 RF CATV Distribution Amplifiers . . . . . . . . . 1.1-37 Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1-4 Chapter Two RF Front End ICs Section Two: Data Sheets . . . . . . . . . . 3.2-1 Chapter Four Frequency Synthesis . . . . . . . . . . . 4.0-1 Section One: Selector Guide . . . . . . . 4.1-1 . . . . . . . . . . . . . . . . 2.0-1 Section One: Selector Guide . . . . . . . 2.1-1 RF Front End ICs . . . . . . . . . . . . . . . . . . . . . . . RFICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Upconverters/Exciters . . . . . . . . . . . . . . Power Amplifiers . . . . . . . . . . . . . . . . . . . RF Building Blocks . . . . . . . . . . . . . . . . . . . Amplifiers . . . . . . . . . . . . . . . . . . . . . . . . . Low Power Transistors . . . . . . . . . . . . . . Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.1-1 2.1-2 2.1-2 2.1-2 2.1-3 2.1-3 2.1-3 2.1-4 Section Two: Data Sheets . . . . . . . . . . 2.2-1 PLL Synthesizers . . . . . . . . . . . . . . . . . . . . . . . 4.1-4 Single . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.1-4 Dual . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.1-4 PLL Building Blocks . . . . . . . . . . . . . . . . . . . . . 4.1-5 Prescalers . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.1-5 Voltage Control Oscillators . . . . . . . . . . . . . 4.1-5 Phase-Frequency Detectors . . . . . . . . . . . 4.1-5 Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.1-6 Section Two: Data Sheets . . . . . . . . . . 4.2-1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA iii Table of Contents Page Page Chapter Five RF Discrete Transistors . . . . . . . . Chapter Seven 5.0-1 Section One: Selector Guide . . . . . . . 5.1-1 RF Discrete Transistors . . . . . . . . . . . . . . . . . . RF High Power Transistors . . . . . . . . . . . . RF Power MOSFETs . . . . . . . . . . . . . . . 2 to 150 MHz HF/SSB . . . . . . . . . . . . 2 to 225 MHz VHF AM/FM . . . . . . . . 30 to 512 MHz VHF/UHF AM/FM . . Mobile - To 520 MHz . . . . . . . . . . . . . Broadcast - To 1.0 GHz . . . . . . . . . . Cellular - To 1.0 GHz . . . . . . . . . . . . PCS and 3G - To 2.1 GHz . . . . . . . . RF Power GaAs Transistors . . . . . . . . . 3.5 GHz Linear Transistors . . . . . . . . RF Power Bipolar Transistors . . . . . . . . UHF Transistors . . . . . . . . . . . . . . . . . 900 MHz Transistors . . . . . . . . . . . . . 1.5 GHz Transistors . . . . . . . . . . . . . . Microwave Transistors . . . . . . . . . . . Linear Transistors . . . . . . . . . . . . . . . RF LDMOS High Power Transistor Line-ups . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.1-1 5.1-2 5.1-2 5.1-2 5.1-2 5.1-2 5.1-3 5.1-3 5.1-3 5.1-4 5.1-6 5.1-6 5.1-7 5.1-7 5.1-7 5.1-7 5.1-8 5.1-8 5.1-9 Section Two: Data Sheets . . . . . . . . . . 5.2-1 Chapter Six RF Amplifier Modules . . . . . . . . . . 6.0-1 RF CATV Distribution Amplifiers . . . . . . . . . . . . . . . . . . . . . . . . . 7.0-1 Section One: Selector Guide . . . . . . . 7.1-1 RF CATV Distribution Amplifiers . . . . . . . . . . 7.1-1 Forward Amplifiers . . . . . . . . . . . . . . . . . . . . 7.1-2 Reverse Amplifiers . . . . . . . . . . . . . . . . . . . 7.1-4 Section Two: Data Sheets . . . . . . . . . . 7.2-1 Chapter Eight Tape and Reel Specifications . . . . . . . . . . . . . . . . . . . . 8.1-1 Chapter Nine Packaging Information . . . . . . . . . 9.1-1 Chapter Ten Applications and Product Literature . . . . . . . . . . . . . . . . . . . . . . . . . 10.1-1 Section One: Selector Guide . . . . . . . 6.1-1 RF Amplifier Modules/ICs . . . . . . . . . . . . . . . . 6.1-1 Base Stations . . . . . . . . . . . . . . . . . . . . . . . . 6.1-2 Wideband Linear Amplifiers . . . . . . . . . . . . 6.1-3 Section Two: Data Sheets . . . . . . . . . . 6.2-1 Chapter Eleven Motorola Distributor and Worldwide Sales Offices . . . . . . 11.1-1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA iv Wireless RF, IF and Transmitter Device Data FOREWORD This publication includes technical information for the several product families that comprise the Motorola portfolio of Wireless RF, IF and Transmitter products. The product families include bipolar, LDMOS, MOSFET RF Power, and gallium arsenide chip technologies in a variety of ceramic and plastic surface mount packages. Discrete components, hybrid modules, and integrated circuits provide different levels of complexity in an effort to provide solutions for our customers' needs. All devices are in alphanumeric order in the Device Index of this book. Just turn to the appropriate page for technical details of the known device. Complete device specifications are provided in the form of Data Sheets which are categorized by product type into six chapters for easy reference. Selector Guides by product family are provided at the beginning of the book as well as in the beginning of each chapter to enable quick comparisons of performance characteristics and to aid you in identifying devices that meet your functional performance requirements of frequency, output power, gain, or other parameters. Chapters on Tape and Reel Options, Packaging Information, Applications and Product Literature include additional information to aid you in the design process. Applications assistance is only a phone call away -- call the nearest Semiconductor Sales office or 1-800-521-6274. Please refer to our section on On-line Access to Wireless Semiconductor Data so that you will always have easy access to the most current information available on Motorola's Wireless RF, IF and Transmitter product portfolio. The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Motorola, Inc. 2001 Previous Edition 2000 "All Rights Reserved" Printed in U.S.A. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA v ABOUT THIS REVISION DATA CLASSIFICATION This edition of the Wireless RF, IF and Transmitter Device Data Book encompasses a considerable number of changes that have occurred since our last printing. Some devices have been removed from this book due to package changes or new technology replacements and many new devices have been added. Application Notes, Engineering Bulletins and Article Reprints of special interest to designers of RF and IF equipment are available on the Motorola Semiconductor Product Sector Web site or are available through the Motorola Literature Distribution Center. Phone and fax numbers for ordering literature are listed on the back cover of this book and in our Accessing Data On-line section. See Chapter Ten for a complete listing of Application Literature. For Cross Reference information on Motorola replacement devices, please consult your local Distributor or Motorola Sales Office. See Chapter Eleven in this data book for a complete listing of Motorola Distributor and Worldwide Sales Offices. Product Preview This heading on a data sheet indicates that the device is in the formative stages or in design (under development). The disclaimer at the bottom of the first page reads: ``This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.'' Advance Information This heading on a data sheet indicates that the device is in sampling, pre-production, or first production stages. The disclaimer at the bottom of the first page reads: ``This document contains information on a new product. Specifications and information herein are subject to change without notice.'' Fully Released A fully released data sheet contains neither a classification heading nor a disclaimer at the bottom of the first page. This document contains information on a product in full production. Guaranteed limits will not be changed without written notice to your local Motorola Semiconductor Sales Office. Technical Summary The Technical Summary is an abridged version of the complete device data sheet that contains the key technical information required to determine the correct device for a specific application. Complete device data sheets for these more complex devices are available from your Motorola Semiconductor Sales Office or authorized distributor. Annular Semiconductors patented by Motorola, Inc. BitGrabber is a trademark of Motorola, Inc. BitGrabber Plus is a trademark of Motorola, Inc. InterActiveApNote is a trademark of Motorola, Inc. MECL 10H is a trademark of Motorola, Inc. MICROWIRE is a trademark of National Semiconductor MOSAIC III is a trademark of Motorola, Inc. MOSAIC V is a trademark of Motorola, Inc. Sleep-Mode is a trademark of Motorola, Inc. SORF is a trademark of Motorola, Inc. Teflon is a registered trademark of du Pont de Nemours & Co., Inc. Thermal Clad is a trademark of the Bergquist Company TMOS is a registered trademark of Motorola, Inc. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA vi ACCESS MOTOROLA SEMICONDUCTOR TECHNICAL INFORMATION Access Data On-Line! - Use Motorola's SPS Internet Server Motorola SPS has provided a World Wide Web Server to deliver Motorola SPS's technical data to the global Internet community. Technical data (such as data sheets, application notes, and selector guides) is available on the Internet server with full search capabilities. All have easy text search capability. Ordering literature from the Literature Center is available on line. Other features of Motorola SPS's Internet server include the availability of a searchable press release database, technical training information, with on-line registration capabilities, an on-line technical support form to send technical questions and receive answers through email, information on product groups, full search capabilities of device models, a listing of authorized distributors, and links directly to other Motorola world wide web servers. How to reach us: After accessing the Internet, use the following URL: http://www.motorola.com/semiconductors/ http://www.motorola.com/semiconductors/rf/ Literature Centers Printed literature can be obtained from the Literature Centers upon request. For those items that incur a cost, the U.S. Literature Center will accept Master Card and Visa. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution P.O. Box 5405 Denver, Colorado 80217 Phone: 1-800-441-2447 or 1-303-675-2140 JAPAN: Motorola Japan Ltd. SPS, Technical Information Center 3-20-1, Minami-Azabu. Minato-ku Tokyo 106-8573 Japan Phone: 81-3-3440-3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd. Silicon Harbour Centre 2 Dai King Street, Tai Po Industrial Estate Tai Po, N.T., Hong Kong Phone: 852-26668334 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA vii MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA viii DEVICE INDEX Device Number Page Number Device Number Page Number CA901 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-3 MC145158-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-88 CA922 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-5 MC145170-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-100 CA922A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-5 MC145193 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-124 MBC13706 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2-3 MC145202-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-146 MBC13900 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2-4 MC145220 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-168 MBC13901 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2-5 MC145220EVK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-193 MC3356 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-3 MCH12140 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-74 MC12026A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-3 MCK12140 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-74 MC12026B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-3 MHL8018 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2-3 MC12038A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-8 MHL8115 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2-5 MC12052A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-12 MHL8118 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2-7 MC12054A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-15 MHL9236 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2-9 MC12079 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-17 MHL9236M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2-9 MC12080 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-20 MHL9318 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2-12 MC12093 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-23 MHL9838 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2-15 MC12095 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-25 MHL19338 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2-18 MC12147 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-29 MHL19936 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2-19 MC12148 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-40 MHL21336 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2-20 MC12149 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-43 MHW1223LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-7 MC12179 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-54 MHW1224 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-9 MC12210 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-64 MHW1224LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-11 MC13055 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-9 MHW1244 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-9 MC13110A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-16 MHW1253LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-13 MC13111A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-16 MHW1254L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-15 MC13135 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-79 MHW1254LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-16 MC13136 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-79 MHW1303LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-18 MC13145 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-91 MHW1304L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-20 MC13146 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-108 MHW1304LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-21 MC13150 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-122 MHW1353LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-23 MC13155 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-139 MHW1354LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-25 MC13156 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-154 MHW1810-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2-21 MC13158 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-172 MHW1810-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2-21 MC13176 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-194 MHW1910-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2-27 MC13760 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-211 MHW6342T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-27 MC33411A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-216 MHW7182B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-29 MC33411B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-216 MHW7185C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-30 MC144110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-257 MHW7185CL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-31 MC144111 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-257 MHW7205C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-32 MC145026 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-263 MHW7205CL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-33 MC145027 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-263 MHW7222B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-34 MC145028 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-263 MHW7272A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-36 MC145151-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-78 MHW7292 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-37 MC145152-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-81 MHW8182B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-38 MC145157-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-85 MHW8185 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-39 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ix Device Number Page Number Device Number Page Number MHW8185L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-40 MRF275G . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-198 MHW8185LR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-41 MRF275L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-213 MHW8185R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-42 MRF281SR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-225 MHW8205 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-43 MRF281ZR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-225 MHW8205L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-44 MRF282SR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-229 MHW8205R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-45 MRF282ZR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-229 MHW8222B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-46 MRF284 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-236 MHW8242A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-48 MRF284SR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-236 MHW8272A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-49 MRF372 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-247 MHW8292 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-50 MRF373 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-258 MHW9182B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-51 MRF373S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-258 MHW9242A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-52 MRF374 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-267 MRF134 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-3 MRF392 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-275 MRF136 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-12 MRF393 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-278 MRF141 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-22 MRF858S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-281 MRF141G . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-31 MRF897 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-286 MRF148A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-39 MRF897R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-290 MRF150 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-44 MRF898 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-295 MRF151 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-51 MRF899 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-298 MRF151G . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-58 MRF1511T1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-303 MRF154 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-66 MRF1513T1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-313 MRF157 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-72 MRF1517T1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-325 MRF158 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-78 MRF1518T1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-337 MRF160 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-93 MRF1535T1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-349 MRF166C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-101 MRF1550T1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-359 MRF166W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-109 MRF6404 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-368 MRF171A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-118 MRF6409 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-377 MRF173 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-129 MRF6414 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-382 MRF174 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-136 MRF6522-10R1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-387 MRF177 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-144 MRF6522-70 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-394 MRF181SR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-152 MRF6522-70R3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-394 MRF181ZR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-152 MRF9045 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-401 MRF182 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-160 MRF9045S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-401 MRF182S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-160 MRF9045SR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-401 MRF182SR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-160 MRF9045MR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-408 MRF183 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-166 MRF9080 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-414 MRF183S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-166 MRF9080S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-414 MRF183SR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-166 MRF9085 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-420 MRF184 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-175 MRF9085S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-420 MRF184S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-175 MRF9180 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-426 MRF184SR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-175 MRF9180S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-426 MRF185 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-183 MRF10005 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-434 MRF186 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-185 MRF10031 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-437 MRF187 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-192 MRF10120 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-440 MRF187S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-192 MRF10150 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-443 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA x DEVICE INDEX -- continued Device Number Page Number Device Number Page Number MRF10350 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-446 MRF21030 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-543 MRF10502 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-449 MRF21030S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-543 MRF16006 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-452 MRF21045 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-548 MRF16030 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-456 MRF21045S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-548 MRF18060A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-460 MRF21060 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-556 MRF18060AS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-460 MRF21060S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-556 MRF18060B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-466 MRF21085 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-562 MRF18060BS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-466 MRF18090A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-472 MRF18090AS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-472 MRF18090B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-478 MRF18090BS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-478 MRF19030 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-484 MRF19030S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-484 MRF19060 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-489 MRF19060S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-489 MRF19085 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-495 MRF19085S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-495 MRF19090 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-503 MRF21085S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-562 MRF21090 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-570 MRF21090S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-570 MRF21120 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-575 MRF21120S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-575 MRF21125 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-582 MRF21125S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-582 MRFIC0915 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2-6 MRFIC0916 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2-14 MRFIC0919 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2-21 MRFIC0930 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2-31 MRFIC0954 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2-38 MRFIC1808 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2-47 MRF19090S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-503 MRFIC1813 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2-54 MRF19120 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-509 MRFIC1819 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2-60 MRF19120S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-509 MRFIC1854A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2-70 MRF19125 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-516 MRFIC1856 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2-79 MRF19125S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-516 MRFIC1859 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2-86 MRF20030R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-524 MRFIC1869 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2-98 MRF20060R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-531 MRFIC1884 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2-100 MRF20060RS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-531 TPV8100B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-589 MRF21010 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-538 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA xi MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA xii Chapter One Wireless RF, IF and Transmitter Selector Guide While Motorola is a worldwide leader in semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar power and signal transistors to integrated circuits, Motorola's RF components cover the entire spectrum from HF to microwave to personal communications. Yet, product expansion continues -- not only to keep pace with the progressive needs of the industry, but to better serve the needs of designers for a reliable and comprehensive source of supply. How to Use This Selector Guide The RF Monolithic Integrated Circuits and the RF/IF Integrated Circuits products in this guide are divided into three major functional categories: RF Front End ICs, RF/IF Subsystem ICs and Frequency Synthesis. Each of these categories is further subdivided based on circuit functionality. This structure differentiates highly integrated subsystem ICs from fundamental circuit building blocks and discrete transistors. The Power MOSFETs, Power GaAs Transistors, Power Bipolar Transistors, Power Amplifier Modules and CATV Distribution Amplifiers are FIRST divided into major categories by power level. SECOND, within each category parts are listed by frequency band. THIRD, within a frequency band, transistors are further grouped by operating voltage and, finally, output power. To Replace Devices in an Existing Design Call your local Motorola Sales Office or Distributor to determine Motorola's closest replacement device. Applications Assistance Applications assistance is only a phone call away -- call the nearest Semiconductor Sales office or 1-800-521-6274. Access Data On-Line! Use the Motorola SPS Internet to access Motorola Semiconductor Product data at http://www.motorola.com/ semiconductors or http://www.motorola.com/semiconductors/rf/. The SPS Internet provides you with instant access t o dat a s heet s , s e l e c to r g u i d e i n fo rma ti o n , pac k age outlines, on-line technical support and much more. Table of Contents Page RF Front End ICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1-3 RFICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1-4 Upconverters/Exciters . . . . . . . . . . . . . . . . . . . . . 1.1-4 Power Amplifiers . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1-4 RF Building Blocks . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1-5 Amplifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1-5 Low Power Transistors . . . . . . . . . . . . . . . . . . . . . 1.1-5 Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1-6 RF/IF Subsystems . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1-7 Cordless Phone Subsystem ICs . . . . . . . . . . . . . . . 1.1-8 Tranceivers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1-8 Miscellaneous Functions . . . . . . . . . . . . . . . . . . . . . . 1.1-9 ADCs/DACs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1-9 Encoders/Decoders . . . . . . . . . . . . . . . . . . . . . . . 1.1-9 Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1-10 Frequency Synthesis . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1-11 PLL Synthesizers . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1-12 Single . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1-12 Dual . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1-12 PLL Building Blocks . . . . . . . . . . . . . . . . . . . . . . . . . 1.1-13 Prescalers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1-13 Voltage Control Oscillators . . . . . . . . . . . . . . . . 1.1-13 Phase-Frequency Detectors . . . . . . . . . . . . . . . 1.1-13 Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1-14 RF Discrete Transistors . . . . . . . . . . . . . . . . . . . . . . . . 1.1-15 RF High Power Transistors . . . . . . . . . . . . . . . . . . . 1.1-16 RF Power MOSFETs . . . . . . . . . . . . . . . . . . . . . 1.1-16 2 to 150 MHz HF/SSB . . . . . . . . . . . . . . . . . . 1.1-16 2 to 225 MHz VHF AM/FM . . . . . . . . . . . . . 1.1-16 30 to 512 MHz VHF/UHF AM/FM . . . . . . . . 1.1-16 Mobile - To 520 MHz . . . . . . . . . . . . . . . . . . 1.1-17 Broadcast - To 1.0 GHz . . . . . . . . . . . . . . . . 1.1-17 Cellular - To 1.0 GHz . . . . . . . . . . . . . . . . . . 1.1-17 PCS and 3G - To 2.1 GHz . . . . . . . . . . . . . . 1.1-18 RF Power GaAs Transistors . . . . . . . . . . . . . . . 1.1-20 3.5 GHz - Linear Transistors . . . . . . . . . . . . 1.1-20 RF Power Bipolar Transistors . . . . . . . . . . . . . . 1.1-21 UHF Transistors . . . . . . . . . . . . . . . . . . . . . . . 1.1-21 900 MHz Transistors . . . . . . . . . . . . . . . . . . . 1.1-21 1.5 GHz Transistors . . . . . . . . . . . . . . . . . . . 1.1-21 Microwave Transistors . . . . . . . . . . . . . . . . . 1.1-22 Linear Transistors . . . . . . . . . . . . . . . . . . . . . 1.1-22 RF LDMOS High Power Transistor Line-ups . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1-23 Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1-31 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA SELECTOR GUIDE 1.1-1 Chapter One Wireless RF, IF and Transmitter Selector Guide Table of Contents - continued Page RF Discrete Transistors - continued RF High Power Transistors - continued RF Amplifier Modules/ICs . . . . . . . . . . . . . . . . . Base Stations . . . . . . . . . . . . . . . . . . . . . . . . . Wideband Linear Amplifiers . . . . . . . . . . . . . Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . RF CATV Distribution Amplifiers . . . . . . . . . . . . Forward Amplifiers . . . . . . . . . . . . . . . . . . . . . Reverse Amplifiers . . . . . . . . . . . . . . . . . . . . Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . SELECTOR GUIDE 1.1-2 1.1-33 1.1-34 1.1-35 1.1-36 1.1-37 1.1-38 1.1-40 1.1-42 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA RF Front End ICs Motorola's RF Front End integrated circuit devices provide an integrated solution for the personal communications market. These devices are available in plastic SOT-143, SOT-343, TSSOP-16, TSSOP-16EP, Micro-8, TSSOP-20EP, or BCC32++ packages. Evaluation Boards Evaluation boards are available for RF Front End Integrated Circuits. For a complete list of currently available boards and ones in development for newly introduced product, please contact your local Motorola Distributor or Sales Office. Table of Contents RF Front End ICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . RFICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Upconverters/Exciters . . . . . . . . . . . . . . . . . . . . . Power Amplifiers . . . . . . . . . . . . . . . . . . . . . . . . . . RF Building Blocks . . . . . . . . . . . . . . . . . . . . . . . . . . . Amplifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Low Power Transistors . . . . . . . . . . . . . . . . . . . . . Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Page 1.1-3 1.1-4 1.1-4 1.1-4 1.1-5 1.1-5 1.1-5 1.1-6 SELECTOR GUIDE 1.1-3 RF Front End ICs RFICs Upconverters/Exciters RF Freq. Range MHz Supply Volt. Range Vdc Supply Current mA (Typ) Standby Current mA (Typ) Conv. Gain dB (Typ) Output IP3 dBm (Typ) MRFIC0954(18b) 800 to 1000 2.7 to 5.0 65 5.0 31 MRFIC1813(18b) 1700 to 2000 2.7 to 4.5 25 0.1 MRFIC1854A(18b) 1700 to 2000 2.7 to 5.0 70 2 7 to 3.2 2.7 32 60 Device MRFIC1884(46a) Case No./ Package System Applicability 28 948M/ TSSOP-20EP CDMA, TDMA, ISM 15 11 948C/ TSSOP-16 DCS1800, PCS 5.0 31 23 948M/ TSSOP-20EP CDMA, TDMA, PCS 28 50 5.0 32 1261A/ BCC32++ CDMA, TDMA, ISM, PCS 800 to 1000 1700 to 2000 23 Power Amplifiers Freq. Range MHz Supply Volt. Range Vdc Saturated Pout dBm (Typ) PAE % (Typ) Gain Pout/Pin dB (Typ) MRFIC0919(18b) 800 to 1000 3.0 to 5.5 35.3 48 MRFIC1819(18b) 1700 to 2000 3.0 to 5.0 33 MRFIC1856(18b) 800 to 1000 3.0 to 5.6 Device MRFIC1859(18b) Case No./ Package System Applicability 32.3 948L/ TSSOP-16EP GSM 40 27 948L/ TSSOP-16EP DCS1800, PCS 32 50 32 TDMA, CDMA, AMPS 1700 to 2000 30 35 30 948M/ TSSOP-20EP TSSOP 20EP 800 to 1000 36.2 53 33.2 GSM 34 43 29 873E/ TQFP-32EP 35.8 55 35.8 2 8 to 5.5 2.8 55 1700 to 2000 MRFIC1869(46a) 800 to 1000 2 7 to 5.5 2.7 55 1700 to 2000 TDMA, CDMA, PCS DCS1800, PCS GSM900 MLF 32 MLF-32 34 45 32 DCS1800, PCS (18)Tape and Reel Packaging Option Available by adding suffix: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units. (46)To be introduced: a) 1Q01; b) 2Q01; c) 3Q01 New Product SELECTOR GUIDE 1.1-4 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA RF Building Blocks Amplifiers RF Freq. Range MHz Supply Volt. Range Vdc Supply Current mA (Typ) MBC13706(46a) 800 to 1000 2.7 to 3.6 10 200 MRFIC0916(18c) 100 to 2500 2.7 to 5.0 4.7 MRFIC0930DM(18b) 800 to 1000 2.7 to 4.5 MRFIC1808DM(18b) 1700 to 2100 2.7 to 4.5 Device Small Standby Signal Current Gain dB A (Typ) (Typ) Output IP3 dBm (Typ) NF dB (Typ) 26 6.0 - 18.5 8.5 20 5.0 8.0 Case No./ Package System Applicability 3.0 846A/ Micro-8 GSM, ISM 11 1.9 318A/ SOT-143 ISM, PCS, Cellular 19 10 1.7 846A/ Micro-8 GSM, AMPS, ISM 18 13 1.6 846A/ Micro-8 DCS1800, PCS Low Power Transistors Gain - Bandwidth NFmin @ f Device f Typ GHz IC mA Typ dB MBC13900(46a) 15 20 MBC13901(46a) 15 20 Gain @ f Maximum Ratings GHz V(BR) CEO Volts IC mA Case No./ Package 17 1.0 7.0 20 2.0 14 2.0 318M/ SOT-343 SOT 343 1.0 1.0 17 1.0 7.0 20 1.3 2.0 14 2.0 318M/ SOT-343 SOT 343 GHz Typ dB 1.0 1.0 1.3 (18)Tape and Reel Packaging Option Available by adding suffix: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units. (46)To be introduced: a) 1Q01; b) 2Q01; c) 3Q01 New Product MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA SELECTOR GUIDE 1.1-5 RF Front End Integrated Circuit Packages CASE 318A (SOT-143) CASE 318M (SOT-343) CASE 846A (Micro-8) CASE 873E (TQFP-32EP) CASE 948C (TSSOP-16) CASE 948L (TSSOP-16EP) CASE 948M (TSSOP-20EP) CASE 1261A (BCC32++) SELECTOR GUIDE 1.1-6 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA RF/IF Subsystems Table of Contents Page Cordless Phone Subsystems . . . . . . . . . . . . . . . . . . . . 1.1-8 Tranceivers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1-8 Miscellaneous Functions . . . . . . . . . . . . . . . . . . . . . . . . 1.1-9 ADCs/DACs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1-9 Encoders/Decoders . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1-9 Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1-10 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA SELECTOR GUIDE 1.1-7 RF/IF Subsystems Cordless Phone Subsystem ICs Device ICC (Typ) VCC Dual Conversion Receiver Universal Dual PLL Compande r and Audio Interface CVSD Compatible Low Battery Detect Notes Suffix/ Case No. MC13110A 2.7 to 5.5 V Active Mode 8.5 mA Inactive Mode 15 A - CT-0 FB/848B FTA/932 MC13111A 2.7 to 5.5 V Active Mode 8.5 mA Inactive Mode 15 A - CT-0 FB/848B, FTA/932 MC13145 2.7 to 6.5 V Active Mode 27 mA Inactive Mode 10 A MC13146 2.7 to 6.5 V Active Mode 18 mA Inactive Mode 10 A - - - Receiver with coilless demod CT-900 FTA/932 - - - - Transmitter with VCO CT-900 FTA/977 GSM Receiver TDMA/iDEN Receiver Tranceivers Device MC13760(46a) VCC ICC 2.65 to 2.9 Transmit 20 mA Receive 30 mA 4.78 to 5.22 (Charge Pumps) Fractional-N Fractional N PLL Direct Launch La nch GSM Transmitter System Applicability Case No./ No / Pkg Type GSM/DCS, TDMA, iDEN, AMPS 1285/ BGA-104 (46)To be introduced: a) 1Q01; b) 2Q01; c) 3Q01 New Product SELECTOR GUIDE 1.1-8 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Miscellaneous Functions ADCs/DACs Device MC144110 Function I/O Format Resolution Number of Analog Channels DAC Serial 6 Bits 6 MC144111 On-Chip Oscillator - Other Features Emitter-Follower Outputs 4 Suffix/ Case No. DW/751D DW/751G Encoders/Decoders Device Function Number of Address Lines Maximum Number of Address Codes Number of Data Bits Operation Suffix/ Case No. MC145026 Encoder Depends on Decoder Depends on Decoder Depends on Decoder Simplex P/648, D/751B MC145027 Decoder 5 243 4 Simplex 9 19,683 0 Simplex P/648, DW/751G MC145028 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA SELECTOR GUIDE 1.1-9 RF/IF Subsystems Packages CASE 648 P SUFFIX (DIP-16) CASE 751B D SUFFIX (SO-16) CASE 751D DW SUFFIX (SO-20L) CASE 751G DW SUFFIX (SO-16W) CASE 848B FB SUFFIX (QFP-52) CASE 932 FTA SUFFIX (LQFP-48) CASE 977 FTA SUFFIX (LQFP-24) CASE 1285 (BGA-104) SELECTOR GUIDE 1.1-10 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Frequency Synthesis Table of Contents PLL Synthesizers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Dual . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PLL Building Blocks . . . . . . . . . . . . . . . . . . . . . . . . . . . Prescalers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Voltage Control Oscillators . . . . . . . . . . . . . . . . . . . Phase-Frequency Detectors . . . . . . . . . . . . . . . . . Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Page 1.1-12 1.1-12 1.1-12 1.1-13 1.1-13 1.1-13 1.1-13 1.1-14 SELECTOR GUIDE 1.1-11 Frequency Synthesis Single PLL Synthesizers Maximum Frequency (MHz) Supply Voltage (V) Nominal Supply Current (mA) 20 @ 5.0 V 3.0 to 9.0 7.5 @ 5 V 20 @ 5.0 V 3.0 to 9.0 7.5 @ 5 V 20 @ 5.0 V 3.0 to 9.0 20 @ 5.0 V 3.0 to 9.0 100 @ 3.0 V 185 @ 4.5 V 2.7 to 5.5 1100 Device Suffix/ Case Parallel Interface MC145151-2 DW/751F Parallel Interface, Uses External Dual-Modulus Prescaler MC145152-2 DW/751F 7.5 @ 5 V Serial Interface MC145157-2 DW/751G 7.5 @ 5 V Serial Interface, Uses External Dual-Modulus Prescaler MC145158-2 DW/751G 2@3V 6@5V Serial Interface, Auxiliary Reference Divider, Evaluation Kit - MC145170EVK MC145170-2 P/648, D/751B, DT/948C 2.7 to 5.5 7@5V Serial Interface, Standby, Auxiliary Reference Divider, Evaluation Kit - MC145193EVK MC145193 F/751J, DT/948D 2000 2.7 to 5.5 4@3V Serial Interface, Standby, Auxiliary Reference Device, Evaluation Kit - MC145202-1EVK MC145202-1 F/751J, DT/948D 2500 2.7 to 5.5 9.5 Serial Interface MC12210 D/751B, DT/948E 2800 4.5 to 5.5 3.5 Fixed Divider MC12179 D/751 Device Suffix/ Case Features Dual PLL Synthesizers Maximum Frequency (MHz) Supply Voltage (V) Nominal Supply Current (mA) 1100 both loops 2.7 to 5.5 12 SELECTOR GUIDE 1.1-12 Phase Detector Serial Interface, Standby, Evaluation Kit - MC145220EVK MC145220 F/803C, DT/948D MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA PLL Building Blocks Prescalers Single or Dual Modulus Frequency (MHz) Divide Ratios 1100 64/65, 128/129 Dual 1100 10,20,40,80 1100 2000 Supply Voltage (V) Supply Current (mA) Features Device Suffix/ Case 2.7 to 5.5 2.0 max Low Power MC12052A D/751 Single 4.5 to 5.5 5.0 max MC12080 D/751 2, 4, 8 Single 2.7 to 5.5 4.5 max Standby MC12093 D/751 64/65, 128/129 Dual 2.7 to 5.5 2.6 max Low Power MC12054A D/751 2500 2, 4 Single 2.7 to 5.5 14 max Standby MC12095 D/751 2800 64, 128, 256 Single 4.5 to 5.5 11.5 max MC12079 D/751 Voltage Control Oscillators Frequency (MHz) Supply Voltage (V) 1300 2.7 to 5.5 Features Device Suffix/ Case Two high drive open collector outputs (Q, QB), Adjustable output amplitude, Low drive output for prescaler MC12149 D/751 Phase-Frequency Detectors Frequency (MHz) Supply Voltage (V) Features Device Suffix/ Case 800 (Typ) 4.75 to 5.5 MECL10H compatible MCH12140 D/751 800 (Typ) 4.2 to 5.5 100K ECL compatible MCK12140 D/751 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA SELECTOR GUIDE 1.1-13 Frequency Synthesis Packages CASE 648 P SUFFIX (DIP-16) CASE 751 D SUFFIX (SO-8) CASE 751J F SUFFIX (SO-20) CASE 803C F SUFFIX (SO-20) CASE 948D DT SUFFIX (TSSOP-20) SELECTOR GUIDE 1.1-14 CASE 751B D SUFFIX (SO-16) CASE 751G DW SUFFIX (SO-16W) CASE 948C DT SUFFIX (TSSOP-16) CASE 948E DT SUFFIX (TSSOP-20HS) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Motorola RF Discrete Transistors Motorola offers the most extensive group of RF Discrete Transistors offered by any semiconductor manufacturer anywhere in the world today. From Bipolar to FET, the user can choose from a variety of packages. They include plastic and ceramic that are microstrip circuit compatible or surface mountable. Many are designed for automated assembly equipment. Major sub-headings are Power MOSFETs, Power GaAs and Bipolar Transistors. Table of Contents RF Discrete Transistors . . . . . . . . . . . . . . . . . . . . . . . . RF High Power Transistors . . . . . . . . . . . . . . . . . . . RF Power MOSFETs . . . . . . . . . . . . . . . . . . . . . 2 to 150 MHz HF/SSB . . . . . . . . . . . . . . . . . . 2 to 225 MHz VHF AM/FM . . . . . . . . . . . . . . 30 to 512 MHz VHF/UHF AM/FM . . . . . . . . Mobile - To 520 MHz . . . . . . . . . . . . . . . . . . Broadcast - To 1.0 GHz . . . . . . . . . . . . . . . . Cellular - To 1.0 GHz . . . . . . . . . . . . . . . . . . PCS and 3G - To 2.1 GHz . . . . . . . . . . . . . . RF Power GaAs Transistors . . . . . . . . . . . . . . . 3.5 GHz Linear Transistors . . . . . . . . . . . . . RF Power Bipolar Transistors . . . . . . . . . . . . . . UHF Transistors . . . . . . . . . . . . . . . . . . . . . . . 900 MHz Transistors . . . . . . . . . . . . . . . . . . . 1.5 GHz Transistors . . . . . . . . . . . . . . . . . . . Microwave Transistors . . . . . . . . . . . . . . . . . Linear Transistors . . . . . . . . . . . . . . . . . . . . . RF LDMOS High Power Transistor Line-ups . . . Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Page 1.1-15 1.1-16 1.1-16 1.1-16 1.1-16 1.1-16 1.1-17 1.1-17 1.1-17 1.1-18 1.1-20 1.1-20 1.1-21 1.1-21 1.1-21 1.1-21 1.1-22 1.1-22 1.1-23 1.1-31 SELECTOR GUIDE 1.1-15 Motorola RF High Power Transistors RF Power MOSFETs Motorola RF Power MOSFETs are constructed using a planar process to enhance manufacturing repeatability. They are N-channel field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced thermal stability and lower noise. The FETs listed in this section are specified for operation in RF Power Amplifiers and are grouped by frequency range of operation and type of application. Arrangement within each group is first by order of voltage then by increasing output power. Table 1. 2 to 150 MHz HF/SSB - Vertical MOSFETs For military and commercial HF/SSB fixed, mobile and marine transmitters. Device MRF171A MRF148A MRF150 MRF154 MRF157 Frequency Freq ency Band(37) U U U U U 2-225 2-225 2-150 2-100 2-100 Poutt Watts VDD Volts Class Gain (Typ) @ 30 MHz dB 30 30 150 600 600 28 50 50 50 50 AB AB AB AB AB 20 18 17 17 20 Typical IMD d3 dB d11 dB JC C/W Package/Style - 32 - 35 - 32 - 25 - 25 -- - 60 - 60 -- -- 1.52 1.5 0.6 0.13 0.13 211-07/2 211-07/2 211-11/2 368/2 368/2 Table 2. 2 to 225 MHz VHF AM/FM - Vertical MOSFETs For VHF military and commercial aircraft radio transmitters. Device MRF134 MRF136 MRF171A MRF173 MRF174 MRF141 MRF141G MRF151 MRF151G Frequency Band(37) U U U U U U U U U 30-225 30-225 30-225 30-225 30-225 2-175 2-175 2-175 2-175 Pout Watts VDD Volts 5 15 45 80 125 150 300 150 300 28 28 28 28 28 28 28 50 50 Class Gain (Typ)/Freq. dB/MHz Eff. (Typ) % JC C/W AB AB AB AB AB AB AB AB AB 14/150 16/150 19.5/150 13/150 11.8/150 10/175 13/175 13/175 16/175 55 60 65 65 60 55 55 45 55 10 3.2 1.52 0.8 0.65 0.6 0.35 0.6 0.35 Eff. (Typ) % JC C/W 52 55 55 55 60 55 55 13.2 7.2 2.5 1.0 0.65 0.65 0.44 Package/Style 211-07/2 211-07/2 211-07/2 211-11/2 211-11/2 211-11/2 375/2 211-11/2 375/2 Table 3. 30 to 512 MHz VHF/UHF AM/FM - Vertical MOSFETs For VHF/UHF military and commercial aircraft radio transmitters. Device MRF158 MRF160 MRF166C MRF166W MRF177 MRF275L MRF275G Frequency Band(37) Pout Watts U U U U U U U 2 4 20 40 100 100 150 30-512 30-512 30-512 30-512 100-400 150-512 150-512 VDD Volts Class Gain (Typ)/Freq. dB/MHz 28 28 28 28 28 28 28 AB AB AB AB AB AB AB 17.5/500 17/500 16/500 16/500 12/400 8.8/500 11.2/500 Package/Style 305A/2 249/3 319/3 412/1 744A/2 333/2 375/2 (37)M = Matched Frequency Band; U = Unmatched Frequency Band. SELECTOR GUIDE 1.1-16 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA RF Power MOSFETs (continued) Table 4. Mobile - To 520 MHz Designed for broadband VHF & UHF commercial and industrial applications. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 12.5/7.5 volt mobile, portable and base station operation. Frequency Band(37) Device Pout Watts VDD Volts Gain (Typ)/Freq. dB/MHz Eff. (Typ) % JC C/W 55 55 55 55 50(Min) 50(Min) 2.0 2.0 4.0 2.0 0.90 0.75 Package/Style VHF & UHF, Land Mobile Radio, Class AB - LDMOS Die MRF1511T1(18f) MRF1517T1(18f) MRF1513T1(18f) MRF1518T1(18f) MRF1535T1(18j) MRF1550T1(18j) U U U U U U 136-175 430-520 400-520 400-520 400-520 136-175 8 8 3 8 35 50 7.5 7.5 7.5/12.5 12.5 12.5 12.5 11.5/175 11/520 11/520 11/520 10(Min)/520 10(Min)/175 466/1 466/1 466/1 466/1 1264/1 1264/1 Table 5. Broadcast - To 1.0 GHz - Lateral MOSFETs Frequency Band(37) Device Pout Watts VDD Volts Gain (Typ)/Freq. dB/MHz Eff. (Typ) % 32 32 32 32 32 50 18/860 18/860 17.3/860 17/860 18/860 16/860 60 60 41 36 40 50 JC C/W IMD dBc Package/Style -- -- -31 -35 -30 -- 360B/1 360C/1 375F/2 375G/2 375G/2 375G/2 470 - 1000 MHz, Class AB - LDMOS Die MRF373A(46a) MRF373AS(46a) MRF374A(46a) MRF372 MRF377(9) MRF376(9) U U U M M M 470-860 470-860 470-860 470-860 470-860 470-860 75 CW 75 CW 130 PEP 180 PEP 180 PEP 400 Pulsed 1.0 0.75 0.65 0.5 0.5 0.4 Table 6. Cellular - To 1.0 GHz - Lateral MOSFETs Frequency Band(37) Device Pout Watts Test Signal VDD Volts Gain (Typ)/Freq. dB/MHz Eff. (Typ) % JC C/W 2 PEP 30 PEP 30 PEP 30 PEP 45 PEP 45 PEP 45 PEP 60 PEP 60 PEP 60 PEP 70 CW 75 CW 75 CW 90 PEP 90 PEP 2-Tone 2-Tone 2-Tone 2-Tone 2-Tone 2-Tone 2-Tone 2-Tone 2-Tone 2-Tone 1-Tone 1-Tone 1-Tone 2-Tone 2-Tone 26 26 26 26 28 28 28 26 26 26 26 26 26 26 26 16/960 17/945 17/945 17/945 18.5/945 18.8/945 18.8/945 17/945 17/945 17/945 16/921,960 18.5/921,960 18.5/921,960 17.9/880 17.9/880 35 41 40 40 41 42 42 40 40 40 58 55 55 40 40 9 -- 1.9 1.5 0.8(50) 1.4 1.0 -- 1.1 0.8 1.1 0.7 0.7 0.7 0.7 Pkg/ Style 800 - 1.0 GHz, Class AB - LDMOS Die MRF9002R2(18e,46a) MRF9030MR1(18a,46b) MRF9030(46b) MRF9030S(18a,46b) MRF9045MR1(18a) MRF9045 MRF9045S(18a) MRF9060MR1(18a,46b) MRF9060(46a) MRF9060S(18a,46a) MRF6522-70(18i) MRF9080 MRF9080S MRF9085 MRF9085S U U U U U U U U U U M M M M M 960 945 945 945 945 945 945 945 945 945 921-960 921-960 921-960 880 880 978/- 1265/1 360B/1 360C/1 1265/1 360B/1 360C/1 1265/1 360B/1 360C/1 465D/1 465/1 465A/1 465/1 465A/1 (9)In development. (18)Tape and Reel Packaging Option Available by adding suffix: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units. (37)M = Matched Frequency Band; U = Unmatched Frequency Band. (46)To be introduced: a) 1Q01; b) 2Q01; c) 3Q01 (50)Simulated New Product MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA SELECTOR GUIDE 1.1-17 RF Power MOSFETs (continued) Table 6. Cellular - To 1.0 GHz - Lateral MOSFETs (continued) Frequency Band(37) Device Pout Watts Test Signal VDD Volts Gain (Typ)/Freq. dB/MHz Eff. (Typ) % JC C/W Pkg/ Style 2-Tone 2-Tone 2-Tone 2-Tone 26 26 26 26 16/880 16/880 17.5/880 17.5/880 39 39 39 39 0.7 0.7 0.45 0.45 375B/2 375H/2 375D/2 375E/2 VDD Volts Gain (Typ)/Freq. dB/MHz Eff. (Typ) % JC C/W Pkg/ Style 800 - 1.0 GHz, Class AB - LDMOS Die (continued) MRF9120(46a) MRF9120S(46a) MRF9180 MRF9180S M M M M 880 880 880 880 120 PEP 120 PEP 170 PEP 170 PEP Table 7. PCS and 3G - To 2.1 GHz - Lateral MOSFETs Frequency Band(37) Device Pout Watts Test Signal 1805 - 1990 MHz, Class AB - LDMOS Die (GSM1800, GSM1900, GSM EDGE and PCS TDMA) MRF18060A MRF18060AS MRF18060B MRF18060BS MRF18085A(46a) MRF18085AS(46a) MRF18085B(46a) MRF18085BS(46a) MRF18090A MRF18090AS MRF18090B MRF18090BS M M M M M M M M M M M M 1805-1880 1805-1880 1930-1990 1930-1990 1805-1880 1805-1880 1930-1990 1930-1990 1805-1880 1805-1880 1930-1990 1930-1990 60 CW 60 CW 60 CW 60 CW 85 CW 85 CW 85 CW 85 CW 90 CW 90 CW 90 CW 90 CW 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 26 26 26 26 26 26 26 26 26 26 26 26 13/1805,1880 13/1805,1880 13/1930,1990 13/1930,1990 13/1805,1880 13/1805,1880 13/1930,1990 13/1930,1990 13.5/1805,1880 13.5/1805,1880 13.5/1930,1990 13.5/1930,1990 45 45 45 45 52 53 53 52 52 52 45 45 0.97 0.97 0.97 0.97 0.64 0.64 0.64 0.64 0.7 0.7 0.7 0.7 465/1 465A/1 465/1 465A/1 465/1 465A/1 465/1 465A/1 465B/1 465C/1 465B/1 465C/1 2-Tone 2-Tone N-CDMA N-CDMA 2-Tone 2-Tone 2-Tone 2-Tone N-CDMA N-CDMA 2-Tone 2-Tone N-CDMA N-CDMA 26 26 26 26 26 26 26 26 26 26 26 26 26 26 13/1990 13/1990 14.5/1990 14.5/1990 12.5/1990 12.5/1990 11.5/1990 11.5/1990 13/1990 13/1990 11.7/1990 11.7/1990 13.5/1990 13.5/1990 36 36 23.5 23.5 36 36 35 35 23 23 34 34 22 22 2.1 2.1 1.97 1.97 0.97 0.97 0.65 0.65 0.64 0.64 0.45 0.45 0.53 0.53 465E/1 465F/1 465E/1 465F/1 465/1 465A/1 465B/1 465C/1 465/1 465A/1 375D/2 375E/2 465B/1 465C/1 1.9 GHz, Class AB - LDMOS Die (2-CH N-CDMA) MRF19030 MRF19030S MRF19045(46a) MRF19045S(46a) MRF19060 MRF19060S MRF19090 MRF19090S MRF19085 MRF19085S MRF19120(3) MRF19120S(3) MRF19125 MRF19125S M M M M M M M M M M M M M M 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 30 PEP 30 PEP 9.5 AVG 9.5 AVG 60 PEP 60 PEP 90 PEP 90 PEP 18 AVG 18 AVG 120 PEP 120 PEP 24 AVG 24 AVG (3)Internal Impedance Matched Push-Pull Transistors (18)Tape and Reel Packaging Option Available by adding suffix: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units. (37)M = Matched Frequency Band; U = Unmatched Frequency Band. (46)To be introduced: a) 1Q01; b) 2Q01; c) 3Q01 New Product SELECTOR GUIDE 1.1-18 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA RF Power MOSFETs (continued) Table 7. PCS and 3G - To 2.1 GHz - Lateral MOSFETs (continued) Frequency Band(37) Device Pout Watts Test Signal VDD Volts Gain (Typ)/Freq. dB/MHz Eff. (Typ) % JC C/W Pkg/ Style 4 PEP 4 PEP 10 PEP 10 PEP 30 PEP 30 PEP 60 PEP 60 PEP 2-Tone 2-Tone 2-Tone 2-Tone 2-Tone 2-Tone 2-Tone 2-Tone 26 26 26 26 26 26 26 26 12.5/2000 12.5/2000 11.5/2000 11.5/2000 10.5/2000 10.5/2000 10.5/2000 10.5/2000 33 33 28(min) 28(min) 35 35 32 32 5.74 5.74 4.2 4.2 2.0 2.0 0.73 0.73 458B/1 458C/1 458B/1 458C/1 360B/1 360C/1 465/1 465A/1 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 13.5/2170 13.5/2170 13/2170 13/2170 15/2170 15/2170 12.5/2170 12.5/2170 13.6/2170 13.6/2170 11.7/2170 11.7/2170 11.4/2170 11.2/2170 13/2170 13/2170 12.5/2170 12.5/2170 35 35 33 33 23.5 23.5 34 34 23 23 33 33 34.5 34.5 18 18 22 22 5.5 5.5 2.1 2.1 1.97 1.97 1.02 1.02 0.64 0.64 0.65 0.65 0.45 0.45 0.53 0.53 0.39 0.39 360B/1 360C/1 465E/1 465F/1 465E/1 465F/1 465/1 465A/1 465/1 465A/1 465B/1 465C/1 375D/2 375E/2 465B/1 465C/1 375D/2 375E/2 2.0 GHz, Class A, AB - LDMOS Die MRF281SR1(18a) MRF281ZR1(18a) MRF282SR1(18a) MRF282ZR1(18a) MRF284 MRF284SR1(18a) MRF286(46a) MRF286S(46a) U U U U U U M M 1930-2000 1930-2000 1930-2000 1930-2000 1930-2000 1930-2000 1930-2000 1930-2000 2.1 GHz, Class AB - LDMOS Die (2-CH W-CDMA, UMTS) MRF21010 MRF21010S(46a) MRF21030 MRF21030S MRF21045 MRF21045S MRF21060 MRF21060S MRF21085 MRF21085S MRF21090 MRF21090S MRF21120(3) MRF21120S(3) MRF21125 MRF21125S MRF21180(3,46a) MRF21180S(3,46a) U U M M M M M M M M M M M M M M M M 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 10 PEP 10 PEP 30 PEP 30 PEP 10 AVG 10 AVG 60 PEP 60 PEP 19 AVG 19 AVG 90 PEP 90 PEP 120 PEP 120 PEP 20 AVG 20 AVG 38 AVG 38 AVG 2-Tone 2-Tone 2-Tone 2-Tone W-CDMA W-CDMA 2-Tone 2-Tone W-CDMA W-CDMA 2-Tone 2-Tone 2-Tone 2-Tone W-CDMA W-CDMA W-CDMA W-CDMA (3)Internal Impedance Matched Push-Pull Transistors (18)Tape and Reel Packaging Option Available by adding suffix: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units. (37)M = Matched Frequency Band; U = Unmatched Frequency Band. (46)To be introduced: a) 1Q01; b) 2Q01; c) 3Q01 New Product MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA SELECTOR GUIDE 1.1-19 RF Power GaAs Transistors Motorola power GaAs transistors are made using an InGaAs PHEMT epitaxial structure for superior RF efficiency and linearity. The FETs listed in this section are designed for operation in base station infrastructure RF power amplifiers and are grouped according to frequency range and type of application. Parts are listed first by order of operating voltage, then by increasing output power. Table 1. 3.5 GHz - Linear Transistors Frequency Band(37) Device Pout Watts Test Signal VDD Volts Gain (Typ)/Freq. dB/GHz Eff. (Typ) % JC C/W W-CDMA W-CDMA 12 12 10/3.5 10/3.5 26 24 6 -- Pkg/ Style 3.5 GHz, Class AB - GaAs (WLL, BWA, W-CDMA) MRFG35010(9) MRFG35030(9) U M 3.5 G 3.5 G 1 AVG 4 AVG -- -- (9)In development. SELECTOR GUIDE 1.1-20 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA RF Power Bipolar Transistors Motorola's broad line of bipolar RF power transistors are characterized for operation in RF power amplifiers. Typical applications are in base stations, military and commercial landmobile, avionics and marine radio transmitters. Groupings are by frequency band and type of application. Within each group, the arrangement of devices is by major supply voltage rating, then in the order of increasing output power. All devices are NPN polarity except where otherwise noted. UHF Transistors Table 1. 100 - 500 MHz Band Designed for UHF military and commercial aircraft radio transmitters. Frequency Band(37) Device Pout Watts Gain (Min)/Freq. dB/MHz JC C/W 125 100 8/400 7.5/500 0.65 0.65 Package/Style VCC = 28 Volts, Class C MRF392(3) MRF393(3) M M 100-400 100-512 744A/1 744A/1 900 MHz Transistors Table 2. 900 - 960 MHz Band Designed specifically for the 900 MHz mobile radio band, these devices offer superior gain, ruggedness, stability and broadband operation. Devices are for mobile and base station applications. Frequency Band(37) Device JC C/W Pout Watts Class Gain (Min)/Freq. dB/MHz 3.6 CW 30 30 60 CW A AB AB C 11/900 10/900 10.5/900 7/900 6.9 1.7 1.7 1 319A/2 395B/1 395E/1 333A/1 20 50 150 AB AB AB 10/960 8.5/960 8/900 3.8 1.3 0.8 319/2 333A/2 375A/1 Package/Style VCC = 24 Volts -- Si Bipolar MRF858S MRF897(3) MRF897R(3) MRF898(2) U M M M 840-900 900 900 850-900 VCC = 26 Volts -- Si Bipolar MRF6409 MRF6414 MRF899(3) M M M 921-960 921-960 900 1.5 GHz Transistors Table 3. 1600 - 1640 MHz Band Frequency Band(37) Device MRF16006 MRF16030 M M 1600-1640 1600-1640 Pout Watts Class Gain (Min)/Freq. dB/MHz Eff. (Min) % 6 30 C C 7.4/1600 7.5/1600 40 40 JC C/W 6.8 1.7 Package/Style 395C/2 395C/2 (2)Internal Impedance Matched (3)Internal Impedance Matched Push-Pull Transistors (37)M = Matched Frequency Band; U = Unmatched Frequency Band. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA SELECTOR GUIDE 1.1-21 Microwave Transistors Table 4. L-Band Long Pulse Power These products are designed for pulse power amplifier applications in the 960 - 1215 MHz frequency range. They are capable of handling up to 10 s pulses in long pulse trains resulting in up to a 50% duty cycle over a 3.5 millisecond interval. Overall duty cycle is limited to 25% maximum. The primary applications for devices of this type are military systems, specifically JTIDS and commercial systems, specifically Mode S. Package types are hermetic. Frequency Band(37) Device Pout Watts Gain (Min) @ 1215 MHz dB JC C/W 5 8.5 8 336E/1 30 120 10 8 3 0.6 376B/1 355C/1 150 350 500 10(7) 9(7) 9(7) 0.25 0.11 0.12 376B/1 355E/1 355J/1 Package/Style VCC = 28 Volts -- Class C Common Base MRF10005 M 960-1215 VCC = 36 Volts -- Class C Common Base MRF10031 MRF10120 M M 960-1215 960-1215 VCC = 50 Volts -- Class C Common Base MRF10150 MRF10350 MRF10502 M M M 1025-1150 1025-1150 1025-1150 Linear Transistors The following sections describe a wide variety of devices specifically characterized for linear amplification. Included are medium power and high power parts covering frequencies to 2.0 GHz. Table 5. UHF Ultra Linear For TV Applications The following device has been characterized for ultra-linear applications such as low-power TV transmitters in Band IV and Band V and features diffused ballast resistors and an all-gold metal system to provide enhanced reliability and ruggedness. Pout Watts Gain (Typ)/Freq. Small Signal Gain dB/MHz JC C/W 100(11) 9.5/860 0.7 Frequency Band(37) Device Package/Style VCC = 28 Volts, Class AB TPV8100B M 470-860 398/1 Table 6. Microwave Linear for PCN Applications The following devices have been developed for linear amplifiers in the 1.5 - 2 GHz region and have characteristics particularly suitable for PDC, PCS or DCS1800 base station applications. Frequency Band(37) Device Pout Watts Class Gain (Typ)/Freq. dB/MHz JC C/W AB AB AB AB 8.2/1880 11/2000 9.8/2000 9.8/2000 1.4 1.4 0.7 0.7 Package/Style VCC = 26 Volts-Bipolar Die MRF6404(16) MRF20030R MRF20060R MRF20060RS M M M M 1860-1900 2000 2000 2000 30 30 60 60 395C/1 395C/1 451/1 451A/1 (7)Typical @ 1090 MHz (11)Output power at 1 dB compression in Class AB (16)Formerly known as "TP4035" (37)M = Matched Frequency Band; U = Unmatched Frequency Band. SELECTOR GUIDE 1.1-22 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA RF LDMOS High Power Transistor Amplifier Line-ups MRF1513T1 3W 250 mW MRF1513T1 MRF1535T1 35 W 250 mW Mobile - UHF MRF1511T1 8W 750 mW MRF1511T1 MRF1550T1 100 W 750 mW Mobile - VHF MRF1518T1 8W 750 mW Mobile - UHF MRF1518T1 MRF1550T1 50 W 500 mW Mobile - VHF MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA SELECTOR GUIDE 1.1-23 RF LDMOS High Power Transistor Amplifier Line-ups 4 MRF372 1 * * * 8 MRF374A 130 W 2.1 W (continued) 4 5760 W MRF372 Broadcast - 470 MHz - 860 MHz 4 MRF373A MRF373AS 1.2 W MRF373A MRF373AS 1 * * * 16 130 W 4 4800 W 1.4 W MRF374A 1 * * * 8 130 W MRF374A 4160 W MRF373A MRF373AS 4 MRF373A MRF373AS Broadcast - 470 - 860 MHz SELECTOR GUIDE 1.1-24 4 MRF374A Broadcast - 470 - 860 MHz MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA RF LDMOS High Power Transistor Amplifier Line-ups (continued) GSM EDGE - 900 MHz 16 dB 17 dB 18.5 dB MRF9002R2 MRF9030/S MRF9080/S Pin Amp1 Amp2 Amp3 Pout 0.602 mW MRF9002R2 MRF9030/S MRF9080/S 75 W Cellular - 1.0 GHz 16 dB 17.5 dB MRF9002R2 MRF9180/S Pin Amp1 Amp2 Pout 80 mW MRF9002R2 MRF9180/S 170 W GSM1800, GSM1900, GSM EDGE and PCS TDMA - 1.8 - 1.9 GHz 13.5 dB 11.5 dB MRF21010/S MRF282SR1 MRF282ZR1 13 dB MRF19030/S 13 dB 13.5 dB MRF18085A MRF18085B MRF18090A MRF18090B Pin Amp1 Amp2 Amp3 Pout 9.5 mW MRF21010/S MRF19030/S MRF18085A 85 W 9.0 mW MRF21010/S MRF19030/S MRF18090A 90 W 9.5 mW MRF21010/S MRF19030/S MRF18085B 85 W 9.0 mW MRF21010/S MRF19030/S MRF18090B 90 W 15 mW MRF282SR1/ZR1 MRF19030/S MRF18085A 85 W 14.2 mW MRF282SR1/ZR1 MRF19030/S MRF18090A 90 W 15 mW MRF282SR1/ZR1 MRF19030/S MRF18085B 85 W 14.2 mW MRF282SR1/ZR1 MRF19030/S MRF18090B 90 W MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA SELECTOR GUIDE 1.1-25 RF LDMOS High Power Transistor Amplifier Line-ups (continued) 2-CH N-CDMA - 1.9 GHz 13 dB MRF19030/S MRF19045/S 11.7 dB MRF19120/S MRF19125/S Pin Amp1 Amp2 Pout 406 mW MRF19030/S MRF19120/S 120 W 406 mW MRF19045/S MRF19125/S 120 W 2-CH W-CDMA, UMTS - 2.1 GHz 13 dB 12.5 dB MRF21030/S SELECTOR GUIDE 1.1-26 MRF21180/S Pin Amp1 Amp2 Pout 500 mW MRF21030/S MRF21180/S 180 W MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA RF LDMOS High Power Transistor Amplifier Line-ups (continued) GSM1800, GSM1900 Base Station - Class 1: 30 - 90 Watts, 24 - 26 Volts 60 - 90 W Output 24 dB 13 dB 13 dB 13.5 dB MHW1810-1 MHW1910-1 MRF18060A MRF18060B MRF18085A MRF18085B MRF18090A MRF18090B Pin Amp1 Amp2 Pout 12 mW MHW1810-1 MRF18060A 60 W 17 mW MHW1810-1 MRF18085A 85 W 16 mW MHW1810-1 MRF18090A 90 W 12 mW MHW1910-1 MRF18060B 60 W 17 mW MHW1910-1 MRF18085B 85 W 16 mW MHW1910-1 MRF18090B 90 W 30 - 40 W Output 24 dB 10.5 dB MHW1810-1 MHW1910-1 MRF284 MRF284SR1 13 dB 14 dB MRF19030/S MRF19045/S Pin Amp1 Amp2 Pout 10.6 mW MHW1810-1 MRF284/SR1 30 W 6.0 mW MHW1810-1 MRF19030/S 30 W 7.13 mW MHW1810-1 MRF19045/S 45 W 10.6 mW MHW1910-1 MRF284/SR1 30 W 6.0 mW MHW1910-1 MRF19030/S 30 W 7.13 mW MHW1910-1 MRF19045/S 45 W MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA SELECTOR GUIDE 1.1-27 RF LDMOS High Power Transistor Amplifier Line-ups (continued) GSM1800, GSM1900 Base Station - Class 2: 30 - 45 Watts, 24 - 26 Volts 30 W Output 24 dB 10.5 dB MHW1810-1 MHW1910-1 MRF284 MRF284SR1 Pin Amp1 Amp2 Pout 10.6 mW MHW1810-1 MRF284/SR1 30 W 10.6 mW MHW1910-1 MRF284/SR1 30 W 30 W Output 12.5 dB 11.5 dB MRF281SR1 MRF281ZR1 Pin 10.5 dB MRF282SR1 MRF282ZR1 Amp1 MRF284 MRF284SR1 Amp3 Amp2 10.6 mW MRF281SR1/ZR1 MRF282SR1/ZR1 MRF284/SR1 Pout 30 W 30 - 45 W Output SELECTOR GUIDE 1.1-28 13.5 dB 13 dB 14 dB MRF21010/S MRF19030/S MRF19045/S Pin Amp1 Amp2 Pout 67 mW MRF21010/S MRF19030/S 30 W 80 mW MRF21010/S MRF19045/S 45 W MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA RF LDMOS High Power Transistor Amplifier Line-ups (continued) GSM1800, GSM1900 Base Station - Class 3: 5 - 10 Watts, 24 - 26 Volts Microcell 24 dB MHW1810-1 MHW1910-1 Pin Amp1 Pout 40 mW MHW1810-1 10 W 40 mW MHW1910-1 10 W 12.5 dB MRF281SR1 MRF281ZR1 13.5 dB 11.5 dB MRF21010/S MRF282SR1 MRF282ZR1 Pin Amp1 Amp2 Pout 25 mW MRF281SR1/ZR1 MRF21010/S 10 W 40 mW MRF281SR1/ZR2 MRF282SR1/ZR2 10 W GSM900 Base Station - Class 4: 85 - 120 Watts, 24 - 26 Volts 16 dB 39 dB 17.9 dB 16 dB MRF9002R2 MHVIC910HR2 MRF9085/S MRF9120/S Pin Amp1 Amp2 Pout 37 mW MRF9002R2 MRF9085/S 90 W 76 mW MRF9002R2 MRF9120/S 120 W 0.183 mW MHVIC910HR2 MRF9085/S 90 W 0.379 mW MHVIC910HR2 MRF9120/S 120 W MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA SELECTOR GUIDE 1.1-29 RF LDMOS High Power Transistor Amplifier Line-ups (continued) GSM900 Base Station - Class 5: 60 - 70 Watts, 24 - 26 Volts 16 dB 39 dB 16 dB 17 dB MRF9002R2 MHVIC910HR2 MRF6522-70 MRF9060/S Pin Amp1 Amp2 Pout 44 mW MRF9002R2 MRF6522-70 70 W 30 mW MRF9002R2 MRF9060/S 60 W 0.221 mW MHVIC910HR2 MRF6522-70 70 W 0.151 mW MHVIC910HR2 MRF9060/S 60 W GSM900 Base Station - Class 7: 5 - 10 Watts, 24 - 26 Volts SELECTOR GUIDE 1.1-30 16 dB 39 dB MRF9002R2 MHVIC910HR2 Pin Amp1 Pout 252 mW MRF9002R2 10 W 1.3 mW MHVIC910HR2 10 W MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA RF Power MOSFETs and Bipolar Transistors Packages CASE 211-07 STYLE 2 (.380 FLANGE) CASE 211-11 STYLE 2 (.500 FLANGE) CASE 319 STYLE 2, 3 (CS-12) CASE 333A STYLE 1, 2 (MAAC PAC) CASE 355J-02 STYLE 1 CASE 375 STYLE 2 CASE 249 STYLE 3 (.280 PILL) CASE 333 STYLE 2 CASE 319A STYLE 2 CASE 336E STYLE 1 CASE 355C STYLE 1 CASE 360B STYLE 1 (Micro 250) CASE 375A STYLE 1 CASE 305A STYLE 2 (.204 PILL) CASE 360C STYLE 1 (Micro 250S) CASE 375B STYLE 2 (Micro 860) CASE 355E STYLE 1 CASE 368 STYLE 2 (HOG PAC) CASE 375D STYLE 2 SCALE 1:1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA SELECTOR GUIDE 1.1-31 CASE 375E STYLE 2 CASE 376B STYLE 1 CASE 458B STYLE 1 (Micro 200S) SELECTOR GUIDE 1.1-32 CASE 395B STYLE 1 CASE 395C STYLE 1, 2 CASE 395E STYLE 1 CASE 451A STYLE 1 CASE 465 STYLE 1 CASE 465C STYLE 1 CASE 466 STYLE 1 PLASTIC (PLD 1.5) CASE 375H STYLE 2 CASE 451 STYLE 1 CASE 458C STYLE 1 (Micro 200Z) CASE 465B STYLE 1 SCALE 1:1 CASE 375G STYLE 2 CASE 412 STYLE 1 CASE 398 STYLE 1 CASE 465F STYLE 1 CASE 375F STYLE 2 CASE 465A STYLE 1 CASE 465D STYLE 1 CASE 744A STYLE 1, 2 CASE 978 CASE 465E STYLE 1 CASE 1264 PLASTIC (TO-272) STYLE 1 CASE 1265 PLASTIC (TO-270) STYLE 1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Motorola RF Amplifier Modules/ICs Motorola's RF portfolio includes many hybrid designs optimized to perform either in narrowband base station transmitter applications, or in broadband linear amplifiers. Motorola modules feature two or more active transistors (LDMOS, GaAs, or Bipolar die technology) and their associated 50 ohm matching networks. Circuit substrate and metallization have been selected for optimum performance and reliability. For PA designers, hybrid modules offer the benefits of small and less complex system designs, in less time and at a lower overall cost. Table of Contents RF Amplifier Modules/ICs . . . . . . . . . . . . . . . . . . . . . . . Base Stations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Wideband Linear Amplifiers . . . . . . . . . . . . . . . . . . Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Page 1.1-33 1.1-34 1.1-35 1.1-36 SELECTOR GUIDE 1.1-33 Motorola RF Amplifier Modules/ICs Complete amplifiers with 50 ohm input and output impedances are available for all popular base station transmitter systems, including GSM and CDMA, covering frequencies from 800 MHz up to 2.2 GHz. Base Stations Designed for applications such as macrocell drivers and microcell output stage, these class AB amplifiers are ideal for base station systems at 900, 1800 and 1900 MHz, with power requirements up to 30 watts. Table 1. Base Stations Device Frequency MHz P1dB Watts Gain (Min) dB Supply Voltage Volts Class System Application Die Technology Package/Style MHVIC910HR2(18e,46a) MHW1810-1 MHW1810-2 MHW1910-1 MHPA19030(46a) MHPA21030(46a) 921-960 1805-1880 1805-1880 1930-1990 1930-1990 2110-2170 10 10 10 10 30 30 38 24 32 24 25 25 26 26 26 26 26 26 AB AB AB AB AB AB GSM900 GSM1800 GSM1800 GSM1900 PCS1900 W-CDMA LDMOS-IC LDMOS LDMOS LDMOS LDMOS LDMOS 978/- 301AW/1 301AW/1 301AW/1 301AP/1 301AP/1 Table 2. Base Station Drivers These 50 ohm amplifiers are recommended for modern multi-tone CDMA, TDMA and UMTS base station pre-driver applications. Their high third-order intercept point, tight phase and gain control, and excellent group delay characteristics make these devices ideal for use in high-power feedforward loops. Ultra-Linear (for CDMA, W-CDMA, TDMA, Analog) - Class A (LDMOS Die) - Lateral MOSFETs Device MHL9838 MHL9236 MHL9236M MHL9318 MHL18336 (46a) MHL18936 (46a) MHL19338 MHL19936 MHL21336 Frequency Band MHz VDD (Nom.) Volts IDD (Nom.) mA Gain (Nom.) dB Gain Flatness (Typ) dB P1dB (Typ) dBm 3rd Order Intercept (Typ) dBm NF (Typ) dB Case/ Style 800 - 925 800 - 960 800 - 960 860 - 900 1800 - 1900 1800 - 1900 1900 - 2000 1900 - 2000 2110 - 2170 28 26 26 28 26 26 28 26 26 770 550 550 500 500 1400 500 1400 500 31 30.5 30.5 17.5 30 30 30 29 31 .1 .1 .1 .1 .2 .2 .1 .2 .15 39 34 34 35.5 36 41 36 41 35 50 47 47 49 46 51 46 49.5 45 3.7 3.5 3.5 3.0 4.2 4.2 4.2 4.2 4.5 301AP/1 301AP/1 301AP/2 301AS/1 301AP/1 301AY/1 301AP/1 301AY/1 301AP/1 (18)Tape and Reel Packaging Option Available by adding suffix: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units. (46)To be introduced: a) 1Q01; b) 2Q01; c) 3Q01 New Product SELECTOR GUIDE 1.1-34 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Base Stations (continued) Wideband Linear Amplifiers Table 1. Standard 50 Ohm Linear Hybrid This series of RF linear hybrid amplifier has been optimized for wideband, 50 ohm applications. These amplifiers were designed for multi-purpose RF applications where linearity, dynamic range and wide bandwidth are of primary concern. The MHL series utilizes a new case style that provides microstrip input and output connections. Device MHL8018 MHL8115 MHL8118 Frequency Band MHz VCC (Nom.) Volts ICC (Nom.) mA Gain/Freq. (Typ) dB/MHz Gain Flatness (Typ) dB 40- 1000 40- 1000 40- 1000 28 15 28 210 700 400 18.5/900 17.5/900 17.5/900 1 1 1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA P1dB (Typ) dBm 3rd Order Intercept Point/Freq. (Typ) dBm/MHz NF/Freq. (Typ) dB/MHz Case/ Style 26 30 30 38/1000 41.5/1000 41.5/1000 7.5/1000 8.5/1000 8.5/1000 448/1 448/2 448/1 SELECTOR GUIDE 1.1-35 RF Amplifier Modules Packages CASE 301AP STYLE 1, 2 CASE 301AW STYLE 1 CASE 448 STYLE 1, 2 CASE 301AS STYLE 1 CASE 301AY STYLE 1 CASE 978 SCALE 1:1 SELECTOR GUIDE 1.1-36 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Motorola RF CATV Distribution Amplifiers Motorola Hybrids are manufactured using the latest CATV generation technology which has set new standards for CATV system performance and reliability. These hybrids have been optimized to provide premium performance in all CATV systems up to 152 channels. Additions to our CATV product family include 40-870 MHz high output gallium arsenide (GaAs) power doublers as well as low distortion, low power consumption reverse amplifiers. Table of Contents RF CATV Distribution Amplifiers . . . . . . . . . . . . . . . . . Forward Amplifiers . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Amplifiers . . . . . . . . . . . . . . . . . . . . . . . . . . Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Page 1.1-37 1.1-38 1.1-40 1.1-42 SELECTOR GUIDE 1.1-37 Motorola RF CATV Distribution Amplifiers Motorola Hybrids are manufactured using the latest generation technology which has set new standards for CATV system performance and reliability. These hybrids have been optimized to provide premium performance in all CATV systems up to 152 channels. Forward Amplifiers 40-1000 MHz Hybrids, VCC = 24 Vdc, Class A Maximum Distortion Specifications Hybrid Gain (Nom.) @ 50 MHz MH Device MHW9182B MHW9242A Channel Loading C Capacity i dB 18.5 24 152 152 Output Level 2nd Order Test Composite Triple p Beat Cross Modulation Noise Figure @ 1000 MHz dB dB dB dBmV dB 152 CH 152 CH Max Package/ Style + 38 + 38 - 63(40) - 61(40) - 61 - 58 - 61 - 59 7.5 8.0 714Y/1 714Y/1 Composite Triple p Beat Cross Modulation Noise Figure @ 870 MHz dB dB dB 40-870 MHz High Output Gallium Arsenide Power Doubler Maximum Distortion Specifications Hybrid Gain (Nom.) @ 870 MHz MH Device dB MHW9187(46b) 20 Channel Loading C Capacity i 132 Output Level 2nd Order Test dBmV dB 132 CH 132 CH Max Package/ Style + 48 - 62(34) - 58 - 55 4.5 1302/1 DIN45004B @ f=860 MHz dBV Min Noise Figure @ 860 MHz dB Max Package/ Style 40 - 860 MHz Hybrids Device CA901 Gain dB Typ @ 50 MHz Frequency VCC MHz Volts 2nd Order IMD @ Vout = 50 dBmV/ch Max 17 40 - 860 24 - 60 120 8.0 714P/2 40 - 860 40 - 860 24 24 - 63 - 67 123 123 9.5 9.5 714P/2 714P/2 Power Doubling Hybrids CA922 CA922A 17 17 40 - 860 MHz Hybrids, VCC = 24 Vdc, Class A Maximum Distortion Specifications Hybrid Gain (Nom.) @ 50 MHz Device MHW8182B MHW8222B MHW8242A MHW8272A MHW8292 Channel Loading Capacity p y dB 18.5 21.9 24 27.2 29 128 128 128 128 128 Output Level 2nd Order Test Composite Triple p Beat dB Cross Modulation FM = 55 MHz dB Noise Figure @ 860 MHz dB dBmV dB 128 CH 128 CH Max Package/ Style +38 +38 +38 +38 +38 -64(40) -60(40) -62(40) -64(40) -56(40) - 66 - 64 - 64 - 64 - 60 - 65 - 63 - 62 - 62 - 60 7.5 7.0 7.5 7.0 7.0 714Y/1 1302/1 714Y/1 714Y/1 714Y/1 (34)Composite 2nd Order; V out = + 48 dBmV/ch (40)Composite 2nd Order; V out = + 38 dBmV/ch (46)To be introduced: a) 1Q01; b) 2Q01; c) 3Q01 New Product SELECTOR GUIDE 1.1-38 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CATV Distribution: Forward Amplifiers (continued) 40 - 860 MHz Hybrids, VCC = 24 Vdc, Class A (continued) Maximum Distortion Specifications Hybrid Gain (Nom.) @ 50 MHz Device Channel Loading p y Capacity dB Output Level 2nd Order Test Composite Triple p Beat dB Cross Modulation FM = 55 MHz dB Noise Figure @ 860 MHz dB dBmV dB 128 CH 128 CH Max Package// Style +40 +40 +40 +40 +40 +40 +40 -62(39) -62(39) -62(39) -62(39) -60(39) -60(39) -60(39) - 63 - 63 - 64 - 64 - 63 - 63 - 63 - 64 - 64 - 64 - 64 - 64 - 64 - 64 8.5* 8.5* 8.0 8.0 8.5* 8.0 8.0 714Y/1 714Y/2 714Y/1 714Y/2 714Y/1 714Y/1 714Y/2 Power Doubling Hybrids MHW8185L(21) MHW8185LR(28) MHW8185 MHW8185R(14) MHW8205L(22) MHW8205 MHW8205R(24) 18.5 18.5 18.8 18.8 19.5 19.8 19.8 128 128 128 128 128 128 128 *@ 870 MHz 40 - 750 MHz Hybrids, VCC = 24 Vdc, Class A Hybrid Gain (Nom.) @ 50 MHz Device MHW7182B MHW7222B MHW7272A MHW7292 Maximum Distortion Specifications Channel Loading Capacity 2nd Order Test Composite Triple Beat dB Cross Modulation FM = 55 MHz dB Noise Figure @ 750 MHz dB dBmV dB 110 CH 110 CH Max Package/ Style 110 110 110 110 +40 +40 +40 +40 -63(39) -60(39) -64(39) -60(39) - 66 - 61 - 64 - 60 - 64 - 60 - 60 - 60 6.5 6.5 6.5 6.5 714Y/1 1302/1 714Y/1 714Y/1 110 110 110 110 +44 +44 +44 +44 -64(36) -64(36) -63(36) -63(36) -61 -62 -61 -61 -63 -63 -62 -62 7.5 7.5 7.5 7.5 714Y/1 714Y/1 714Y/1 714Y/1 dB 18.5 21.9 27.2 29 Output Level Power Doubling Hybrids MHW7185CL (23) MHW7185C MHW7205CL (27) MHW7205C 18.5 18.8 19.5 19.8 (14)Mirror Amplifier Version of MHW8185 (21)Low DC Current Version of MHW8185; Typical I CC @ Vdc = 24 V is 365 mA. (22)Low DC Current Version of MHW8205; Typical I CC @ Vdc = 24 V is 365 mA. (23)Low I CC Version of MHW7185C; Typical ICC @ Vdc = 24 V is 365 mA. (24)Mirror Amplifier Version of MHW8205 (27)Low I CC Version of MHW7205C; Typical ICC @ Vdc = 24 V is 365 mA. (28)Mirror Amplifier Version of MHW8185L (36)Composite 2nd order; V out = + 44 dBmV/ch (39)Composite 2nd order; V out = +40 dBmV/ch (46)To be introduced: a) 1Q01; b) 2Q01; c) 3Q01 New Product MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA SELECTOR GUIDE 1.1-39 CATV Distribution: Forward Amplifiers (continued) 40 - 550 MHz Hybrids, VCC = 24 Vdc, Class A Maximum Distortion Specifications Hybrid Gain (Nom.) @ 50 MHz Channel Loading Capacity MHW6342T 34.5 2nd Order Test Composite Triple Beat Cross Modulation Noise Figure @ 550 MHz dB dB dB dB Device Output Level 77 dBmV dB 77 CH 77 CH Max Package/ Style +44 -64(35) -57 -57 6.5 1302/1 Reverse Amplifiers 5 - 200 MHz Hybrids, VCC = 24 Vdc, Class A Maximum Distortion Specifications Hybrid G i Gain (Nom ) (Nom.) Device MHW1224 MHW1244 Channel L di Loading Capacity dB 22 24 22 22 Composite Triple p Beat Cross Modulation dB dB Noise Figure @ 175 MHz Output O t t Level 2nd Order O d Test(30) dBmV dB 22 CH 26 CH 22 CH 26 CH dB Max Package// Style +50 +50 -72 -72 -69 -68 - 68.5(19) - 67.5(19) - 62 - 61 -62(19) -61(19) 5.5 5.0 714Y/1 714Y/1 Low Current Amplifiers -- 5 - 200 MHz Hybrids, VCC = 24 Vdc, Class A Maximum Distortion Specifications Hybrid Gain ((Nom.)) Device MHW1223LA MHW1253LA MHW1303LA Channel Loading Capacity p y dB 22.7 25.5 30.8 6,10 6,10 6,10 2nd Order Test Composite Triple p Beat Cross Modulation dB dB dB Output Level DC Current C rrent Noise Figure @ 200 MHz dBmV 6 CH 10 CH 6 CH 10 CH 6 CH 10 CH mA Typ. dB Max Pkg/ Style 50 50 50 - 68 - 68 - 68 - 65 - 66 - 65 -75 -75 -74 - 66 - 66 - 64 - 65 - 65 - 64 - 60 - 61 - 58 95 95 95 7.0 6.5 5.7 1302/1 1302/1 1302/1 DC C t Current Noise Figure @ 150 MH MHz Low Current Amplifiers -- 5 - 150 MHz Hybrids, VCC = 24 Vdc, Class A Maximum Distortion Specifications Hybrid Gain (Nom.) Device MHW1353LA Channel Loading Capacity dB 35.2 6,10 2nd Order Test Output Level Composite Triple p Beat dB Cross Modulation dB dB dBmV 6 CH 10 CH 6 CH 10 CH 6 CH 10 CH mA Typ. dB Max Pkg/ Style 50 - 68 - 65 -73 - 62 - 63 - 57 95 5.4 1302/1 (19)Typical (30)Channels 2 and A @ 7 (35)Channels 2 and M30 @ M39 (36)Composite 2nd order; V out = + 44 dBmV/ch New Product SELECTOR GUIDE 1.1-40 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CATV Distribution: Reverse Amplifiers (continued) Low Current Amplifiers -- 5 - 65 MHz Hybrids, VCC = 24 Vdc, Class A Maximum Distortion Specifications Hybrid Gain ((Nom.)) Channel Loading Capacity p y dB Device MHW1224LA MHW1254LA MHW1304LA MHW1354LA 22.7 25.5 30.8 35 2nd Order Test Output Level Composite Triple p Beat dB DC C rrent Current Noise Figure @ 65 MHz Cross Modulation dB dB dBmV 6 CH 10 CH 6 CH 10 CH 6 CH 10 CH mA Typ. dB Max Pkg/ Style 50 50 50 50 - 68 - 68 - 68 - 68 - 65 - 66 - 65 - 65 -75 -75 -74 -73 - 66 - 66 -64 - 62 - 65 - 65 - 64 - 63 - 60 - 61 - 58 - 57 95 95 95 95 7.0 6.5 5.7 5.2 1302/1 1302/1 1302/1 1302/1 6,10 6,10 6,10 6,10 Low Current Amplifiers -- 5-50 MHz Hybrids, VCC = 24 Vdc, Class A Maximum Distortion Specifications Hybrid Gain (Nom ) (Nom.) Channel Loading Capacity Composite Triple p Beat Cross Modulation dB dB Output Level 2nd Order Test(30) Max dBmV dB 4 CH 4 CH Max Package/ Style 135 135 +50 +50 -70 -70 -70 -66 - 62 - 57 4.5 4.5 714Y/1 714Y/1 IDC dB mA A Device dB MHW1254L MHW1304L 25 30 4 4 Noise Figure @ 50 MHz (30)Channels 2 and A @ 7 New Product MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA SELECTOR GUIDE 1.1-41 RF CATV Distribution Amplifiers Packages CASE 714P STYLE 2 CASE 714Y STYLE 1, 2 CASE 1302 STYLE 1 SCALE 1:2 SELECTOR GUIDE 1.1-42 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Chapter Two RF Front End ICs Section One . . . . . . . . . . . 2.1-0 RF Front End ICs - Selector Guide Section Two . . . . . . . . . . . 2.2-0 RF Front End ICs - Data Sheets MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 2.0-1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 2.0-2 Section One Selector Guide RF Front End ICs Motorola's RF Front End integrated circuit devices provide an integrated solution for the personal communications market. These devices are available in plastic SOT-143, SOT-343, TSSOP-16, TSSOP-16EP, Micro-8, TSSOP-20EP, or BCC32++ packages. Evaluation Boards Evaluation boards are available for RF Front End Integrated Circuits. For a complete list of currently available boards and ones in development for newly introduced product, please contact your local Motorola Distributor or Sales Office. Table of Contents RF Front End ICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . RFICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Upconverters/Exciters . . . . . . . . . . . . . . . . . . . . . Power Amplifiers . . . . . . . . . . . . . . . . . . . . . . . . . . RF Building Blocks . . . . . . . . . . . . . . . . . . . . . . . . . . . Amplifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Low Power Transistors . . . . . . . . . . . . . . . . . . . . . Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Page 2.1-1 2.1-2 2.1-2 2.1-2 2.1-3 2.1-3 2.1-3 2.1-4 SELECTOR GUIDE 2.1-1 RF Front End ICs RFICs Upconverters/Exciters RF Freq. Range MHz Supply Volt. Range Vdc Supply Current mA (Typ) Standby Current mA (Typ) Conv. Gain dB (Typ) Output IP3 dBm (Typ) MRFIC0954(18b) 800 to 1000 2.7 to 5.0 65 5.0 31 MRFIC1813(18b) 1700 to 2000 2.7 to 4.5 25 0.1 MRFIC1854A(18b) 1700 to 2000 2.7 to 5.0 70 2 7 to 3.2 2.7 32 60 Device MRFIC1884(46a) Case No./ Package System Applicability 28 948M/ TSSOP-20EP CDMA, TDMA, ISM 15 11 948C/ TSSOP-16 DCS1800, PCS 5.0 31 23 948M/ TSSOP-20EP CDMA, TDMA, PCS 28 50 5.0 32 1261A/ BCC32++ CDMA, TDMA, ISM, PCS 800 to 1000 1700 to 2000 23 Power Amplifiers Freq. Range MHz Supply Volt. Range Vdc Saturated Pout dBm (Typ) PAE % (Typ) Gain Pout/Pin dB (Typ) MRFIC0919(18b) 800 to 1000 3.0 to 5.5 35.3 48 MRFIC1819(18b) 1700 to 2000 3.0 to 5.0 33 MRFIC1856(18b) 800 to 1000 3.0 to 5.6 Device MRFIC1859(18b) Case No./ Package System Applicability 32.3 948L/ TSSOP-16EP GSM 40 27 948L/ TSSOP-16EP DCS1800, PCS 32 50 32 TDMA, CDMA, AMPS 1700 to 2000 30 35 30 948M/ TSSOP-20EP TSSOP 20EP 800 to 1000 36.2 53 33.2 GSM 34 43 29 873E/ TQFP-32EP 35.8 55 35.8 2 8 to 5.5 2.8 55 1700 to 2000 MRFIC1869(46a) 800 to 1000 2 7 to 5.5 2.7 55 1700 to 2000 TDMA, CDMA, PCS DCS1800, PCS GSM900 MLF 32 MLF-32 34 45 32 DCS1800, PCS (18)Tape and Reel Packaging Option Available by adding suffix: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units. (46)To be introduced: a) 1Q01; b) 2Q01; c) 3Q01 New Product SELECTOR GUIDE 2.1-2 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA RF Building Blocks Amplifiers RF Freq. Range MHz Supply Volt. Range Vdc Supply Current mA (Typ) MBC13706(46a) 800 to 1000 2.7 to 3.6 10 200 MRFIC0916(18c) 100 to 2500 2.7 to 5.0 4.7 MRFIC0930DM(18b) 800 to 1000 2.7 to 4.5 MRFIC1808DM(18b) 1700 to 2100 2.7 to 4.5 Device Small Standby Signal Current Gain dB A (Typ) (Typ) Output IP3 dBm (Typ) NF dB (Typ) 26 6.0 - 18.5 8.5 20 5.0 8.0 Case No./ Package System Applicability 3.0 846A/ Micro-8 GSM, ISM 11 1.9 318A/ SOT-143 ISM, PCS, Cellular 19 10 1.7 846A/ Micro-8 GSM, AMPS, ISM 18 13 1.6 846A/ Micro-8 DCS1800, PCS Low Power Transistors Gain - Bandwidth NFmin @ f Device f Typ GHz IC mA Typ dB MBC13900(46a) 15 20 MBC13901(46a) 15 20 Gain @ f Maximum Ratings GHz V(BR) CEO Volts IC mA Case No./ Package 17 1.0 7.0 20 2.0 14 2.0 318M/ SOT-343 SOT 343 1.0 1.0 17 1.0 7.0 20 1.3 2.0 14 2.0 318M/ SOT-343 SOT 343 GHz Typ dB 1.0 1.0 1.3 (18)Tape and Reel Packaging Option Available by adding suffix: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units. (46)To be introduced: a) 1Q01; b) 2Q01; c) 3Q01 New Product MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA SELECTOR GUIDE 2.1-3 RF Front End Integrated Circuit Packages CASE 318A (SOT-143) CASE 318M (SOT-343) CASE 846A (Micro-8) CASE 873E (TQFP-32EP) CASE 948C (TSSOP-16) CASE 948L (TSSOP-16EP) CASE 948M (TSSOP-20EP) CASE 1261A (BCC32++) SELECTOR GUIDE 2.1-4 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Section Two RF Front End ICs - Data Sheets Device Number Page Number RFICs Upconverters/Exciters MRFIC0954 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2-38 MRFIC1813 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2-54 MRFIC1854A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2-70 MRFIC1884 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2-100 Power Amplifiers MRFIC0919 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2-21 MRFIC1819 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2-60 MRFIC1856 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2-79 MRFIC1859 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2-86 MRFIC1869 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2-98 RF Building Blocks Amplifiers MBC13706 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2-3 MRFIC0915 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2-6 MRFIC0916 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2-14 MRFIC0930 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2-31 MRFIC1808 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2-47 Mixers MBC13900 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2-4 MBC13901 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2-5 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA DATA SHEETS 2.2-1 DATA SHEETS 2.2-2 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MBC13706 Product Preview The RF Building Block Series GSM Low Noise Amplifier with Gain Control Designed primarily for use in GSM wireless communication systems. The MBC13706 is a silicon low noise amplifier with three available gain settings. Two gain control pins control the gain settings. The LNA can be turned off during transmit mode to save current by disabling the RX Enable pin. The LNA is packaged in a low-cost Micro-8 package. * * * * * * * GSM LNA WITH GAIN CONTROL SEMICONDUCTOR TECHNICAL DATA Usable Frequency Range: 925 to 960 MHz Three Gain States: 26, 18, and 0 dB 3.0 dB Max Noise @ Max Gain High Reverse Isolation: > 40 dB @ 945 MHz Low Power Consumption = 30 mW @ Max Gain, 3.0 V 8 Low Standby Current = 200 A (Typ) 1 Low Cost Surface Mount Plastic Package (Scale 2:1) PLASTIC PACKAGE CASE 846A (Micro-8) PIN CONNECTIONS Simplified Block Diagram GC1 GC2 RF In RF In 1 8 GC2 Gnd 2 7 GC1 VCC 3 6 Gnd EN 4 5 RF Out (Top View) RF Out ORDERING INFORMATION EN MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Device Operating Temperature Range Package MBC13706 TA = -30 to 70C Micro-8 MBC13706 2.2-3 MBC13900 Product Preview The RF Building Block Series NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR The MBC13900 is a high performance transistor fabricated using Motorola's 15 GHz f bipolar IC process. It is housed in the 4-lead SC-70 (SOT-343) surface mount plastic package resulting in a parasitic effect reduction and RF performance enhancements. The high performance at low power makes the MBC13900 suitable for front-end applications in portable wireless systems such as pagers, cellular and cordless phones. * * * * * f = 15 GHz NFmin = 1.2 dB ICMAX = 20 mA VCEO = 5.0 V Low Noise Figure, NFmin = 1.0 dB (Typ) @1.0 GHz, 3.0 V and 3.0 mA SEMICONDUCTOR TECHNICAL DATA Maximum Stable Gain, 22 dB @ 1.0 GHz, 3.0 V and 3.0 mA Output Third Order Intercept, OIP3 = 23 dBm @ 1.0 GHz, 3.0 V and 22 mA Ultra small SOT-343 Surface Mount Package Available Only in Tape and Reel Packaging 1 4 (Scale 4:1) PLASTIC PACKAGE CASE 318M (SOT-343, Tape & Reel Only) PIN CONNECTIONS Base 2 Emitter 1 3 Emitter 4 Collector ORDERING INFORMATION MBC13900 2.2-4 Device Package MBC13900 SOT-343 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Product Preview MBC13901 The RF Building Block Series NPN Silicon Low Noise Transistor The MBC13901 is a high performance transistor fabricated using Motorola's 15 GHz f bipolar IC process. It is housed in the 4-lead SC-70 (SOT-343) surface mount plastic package resulting in a parasitic effect reduction and RF performance enhancements. The high performance at low power makes the MBC13901 suitable for front-end applications in portable wireless systems such as pagers, cellular and cordless phones. * * * * * RF NPN SILICON TRANSISTOR f = 15 GHz NFmin = 1.2 dB ICMAX = 20 mA VCEO = 5.0 V Low Noise Figure, NFmin = 1.0 dB (Typ) @1.0 GHz, 3.0 V and 3.0 mA Maximum Stable Gain, 22 dB @ 1.0 GHz, 3.0 V and 3.0 mA Output Third Order Intercept, OIP3 = 23 dBm @ 1.0 GHz, 3.0 V and 22 mA Ultra small SOT-343 Surface Mount Package SEMICONDUCTOR TECHNICAL DATA Available Only in Tape and Reel Packaging 1 4 (Scale 4:1) PLASTIC PACKAGE CASE 318M (SOT-343, Tape & Reel Only) ORDERING INFORMATION MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Device Package MBC13901 SOT-343 MBC13901 2.2-5 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRFIC0915 General Purpose RF Cascode Amplifier The MRFIC0915 is a cost-effective, high isolation cascode silicon monolithic amplifier in the industry standard SOT-143 surface mount package designed for general purpose RF applications. The device is a lower current version of the MRFIC0916 and is appropriate for VCOs, VCO buffers and amplifiers. On-chip bias circuitry sets the bias point while matching is accomplished off chip affording the maximum in application flexibility. * Usable Frequency Range = 100 to 2500 MHz * Good Small Signal Gain at VCC = 2.7 Volts 16.2 dB Typ at 850 MHz 9.6 dB Typ at 1800 MHz 5.8 dB Typ at 2400 MHz * -4.6 dBm typical Output Power at 1 dB Gain Compression at 850 MHz, VCC = 2.7 Volts * 38 dB Typical Reverse Isolation at 850 MHz * 2.5 mA Max Bias Current at VCC = 2.7 Volts * 2.7 to 5 Volt Supply * Order MRFIC0915T1 for Tape and Reel. T1 Suffix = 3.000 Units per 8 mm, 7 inch Reel. * Device Marking = 22 100 to 2500 MHz SILICON GENERAL PURPOSE RF CASCODE AMPLIFIER CASE 318A-05 (SOT-143) MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating Symbol Limit Unit Supply Voltage VCC 6 Vdc RF Input Power PRF 10 dBm Power Dissipation PDIS 100 mW ICC 10 mA RqJC 250 C/W Storage Temperature Range Tstg - 65 to +150 C Operating Case Temperature TC - 40 to +100 C Supply Current Thermal Resistance, Junction to Case GND 1 3 RF OUT RF IN 2 4 GND Pin Connections and Functional Block Diagram REV 1 MRFIC0915 2.2-6 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS The MRFIC Line NOT RECOMMENDED FOR NEW DESIGNS Parameter Symbol Value Unit RF Frequency fRF 100 to 2500 MHz Supply Voltage VCC 2.7 to 5 Vdc ELECTRICAL CHARACTERISTICS (VCC = 2.7 V, TA = 25C) Characteristic Min Typ Max Unit 14.2 7.4 5 16.2 9.6 5.8 -- -- -- dB dB dB Noise Figure 850 1800 MHz 2400 MHz -- -- -- 1.9 3.6 5.5 -- -- -- dB dB dB Power Output at 1dB Gain Compression 850 MHz 1800 MHz 2400 MHz -- -- -- -4.6 -7.8 -9.8 -- -- -- dBm dBm dBm Output 3rd Order Intercept Point 850 MHz 1800 MHz 2400 MHz -- -- -- 4 1 -1 -- -- -- dBm dBm dBm Reverse Isolation 850 MHz 1800 MHz 2400 MHz -- -- -- 38 33 29 -- -- -- dB dB dB Supply Current 1.5 2.0 2.5 mA Small Signal Gain 850 MHz 1800 MHz 2400 MHz VCC II II II III II II IIIII III III T7 C2 C1 L1 T6 T4 C4 RF IN II III II III T1 L2 C1 C2 C3 C4 L1 L2 1 3 2 4 T2 T5 C3 RF OUT T3 10 pF, NPO/COG 0.01 F 1.4 pF, NPO/COG 12 pF, NPO/COG 8.2 nH 10 nH T1 T2 T3 T4 T5 T6 T7 50 MICROSTRIP, 0.13" 76 MICROSTRIP, 0.072" 100 MICROSTRIP, 0.035" 50 MICROSTRIP, 0.048" 50 MICROSTRIP, 0.08" 76 MICROSTRIP, 0.062" 76 MICROSTRIP, 0.07" BOARD MATERIAL: FR4, r = 4.45, THICKNESS = 0.014" Figure 1. 850 MHz Applications Circuit Configuration MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC0915 2.2-7 NOT RECOMMENDED FOR NEW DESIGNS RECOMMENDED OPERATING RANGES VCC II II II III C1 T2 C4 RF IN II III III T4 C2 1 3 2 4 C3 RF OUT T3 1.8 GHz DESCRIPTION 2.4 GHz DESCRIPTION C1 18 pF, NPO/COG C1 12 pF, NPO/COG C2 1.0 pF, NPO/COG C2 1.2 pF, NPO/COG C3 0.9 pF, NPO/COG C3 0.7 pF, NPO/COG C4 10 pF, NPO/COG C4 10 pF, NPO/COG T1 50 MICROSTRIP, 0.41" T1 50 MICROSTRIP, 0.228" T2 50 MICROSTRIP, 0.076" T2 50 MICROSTRIP, 0.076" T3 50 MICROSTRIP, 0.528" T3 50 MICROSTRIP, 0.229" T7 N/A T4 50 MICROSTRIP, 0.345 BOARD MATERIAL: FR4, r = 4.45, THICKNESS = 0.014" Figure 2. 1800 and 2400 MHz Applications Circuit Configuration MRFIC0915 2.2-8 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS T1 TYPICAL CHARACTERISTICS -3 -5 -11 25C -13 -15 -17 f = 850 MHz VCC = 2.7 V -21 -35 -32 -29 -26 -23 -20 -15 1.9 GHz f = 2.4 GHz -20 TA = 25C VCC = 2.7 V -25 -30 -35 -17 -30 -25 -20 -15 Pin, INPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 3. Output Power versus Input Power Figure 4. Output Power versus Input Power 3 2 85C 1 0 -35C -1 -2 25C -3 -4 -5 -6 -7 2.5 -10 f = 850 MHz 3.0 3.5 4.0 4.5 5.0 4 2 f = 850 MHz 0 1.8 GHz -2 -4 2.4 GHz -6 -8 -10 2.5 TA = 25C 3.0 3.5 4.0 4.5 5.0 VCC, SUPPLY VOLTAGE (V) VCC, SUPPLY VOLTAGE (V) Figure 5. Output Power at 1 dB Gain Compression versus Supply Voltage Figure 6. Output Power at 1 dB Gain Compression versus Supply Voltage 5.0 85C I CC , SUPPLY CURRENT (mA) 4.5 4.0 25C 3.5 -35C 3.0 2.5 2.0 1.5 2.5 3.0 3.5 4.0 4.5 5.0 VCC, SUPPLY VOLTAGE (V) Figure 7. Supply Current versus Supply Voltage MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC0915 2.2-9 NOT RECOMMENDED FOR NEW DESIGNS Pin , INPUT POWER (dBm) 85C -9 Pout 1 dB, Pout AT 1 dB GAIN COMPRESSION (dBm) Pout , OUTPUT POWER (dBm) 850 MHz -35C -7 -19 Pout 1 dB, Pout AT 1 dB GAIN COMPRESSION (dBm) NOT RECOMMENDED FOR NEW DESIGNS -5 S21 S12 S22 |S11| |S21| |S12| |S22| 100 0.91 -11 5.72 168 0.000 53 0.97 -3 200 0.90 -22 5.50 156 0.001 85 0.97 -7 300 0.86 -32 5.32 145 0.002 80 0.96 -10 400 0.82 -42 5.00 134 0.002 74 0.95 -13 500 0.75 -52 4.72 122 0.002 69 0.94 -16 600 0.70 -60 4.35 113 0.002 67 0.92 -18 700 0.66 -68 4.05 105 0.003 66 0.91 -21 800 0.63 -75 3.65 97 0.003 67 0.90 -24 900 0.57 -83 3.52 89 0.002 69 0.89 -26 1000 0.54 -90 3.28 82 0.002 73 0.87 -29 1100 0.50 -96 3.05 75 0.002 78 0.86 -32 1200 0.48 -103 2.81 69 0.002 92 0.85 -34 1300 0.45 -109 2.71 62 0.002 108 0.84 -37 1400 0.43 -114 2.53 56 0.002 129 0.83 -40 1500 0.41 -120 2.37 51 0.002 147 0.81 -42 1600 0.39 -125 2.28 45 0.003 160 0.80 -45 1700 0.38 -132 2.12 39 0.004 167 0.79 -48 1800 0.37 -137 2.00 34 0.005 113 0.78 -51 1900 0.36 -141 1.88 28 0.006 116 0.77 -53 2000 0.35 -146 1.78 23 0.008 -2 0.76 -56 2100 0.34 -150 1.71 18 0.010 -61 0.75 -59 2200 0.33 -155 1.65 12 0.012 -120 0.74 -62 2300 0.34 -159 1.51 7 0.013 -120 0.73 -65 2400 0.33 -161 1.51 2 0.016 -61 0.72 -69 2500 0.34 -167 1.39 -5 0.019 58 0.71 -73 2600 0.34 -171 1.32 -10 0.022 176 0.70 -77 2700 0.34 -173 1.26 -15 0.025 175 0.69 -80 2800 0.34 -176 1.20 -20 0.028 174 0.68 -83 2900 0.34 -119 1.14 -25 0.032 172 0.67 -86 3000 0.34 118 1.09 -30 0.036 170 0.66 -90 Table 1. S-Parameters (VCC = 2.7 V, 50 System) MRFIC0915 2.2-10 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS S11 f MHz S21 S12 S22 |S11| |S21| |S12| |S22| 100 0.88 -12 8.65 167 0.001 48 0.97 -3 200 0.85 -23 8.23 154 0.001 93 0.97 -6 300 0.80 -34 7.73 142 0.002 82 0.96 -10 400 0.75 -44 7.15 131 0.002 73 0.95 -12 500 0.67 -53 6.56 119 0.002 68 0.93 -15 600 0.62 -60 5.99 111 0.002 66 0.92 -18 700 0.57 -67 5.47 102 0.002 63 0.91 -21 800 0.53 -74 5.02 95 0.002 65 0.90 -23 900 0.48 -80 4.67 88 0.002 66 0.88 -26 1000 0.44 -86 4.31 81 0.002 69 0.87 -29 1100 0.41 -92 3.98 75 0.001 79 0.86 -31 1200 0.38 -97 3.71 69 0.001 101 0.85 -34 1300 0.36 -102 3.49 63 0.001 139 0.84 -36 1400 0.34 -107 3.26 58 0.002 102 0.82 -39 1500 0.32 -111 3.07 53 0.003 -4 0.81 -42 1600 0.30 -116 2.89 49 0.004 -119 0.80 -44 1700 0.29 -122 2.72 43 0.005 -115 0.79 -47 1800 0.28 -126 2.56 38 0.007 -113 0.78 -50 1900 0.28 -130 2.42 33 0.008 -113 0.77 -53 2000 0.27 -134 2.30 29 0.010 -112 0.76 -55 2100 0.26 -137 2.20 24 0.012 -113 0.75 -58 2200 0.25 -141 2.08 19 0.014 -114 0.74 -61 2300 0.26 -146 1.98 14 0.017 -115 0.73 -64 2400 0.25 -147 1.90 10 0.019 -117 0.72 -68 2500 0.26 -153 1.79 5 0.022 -119 0.71 -72 2600 0.26 -157 1.71 0 0.025 59 0.70 -75 2700 0.27 -159 1.63 -5 0.028 177 0.69 -78 2800 0.27 -162 1.55 -9 0.032 175 0.68 -81 2900 0.27 -164 1.48 -14 0.036 173 0.67 -85 3000 0.27 -167 1.41 -18 0.040 171 0.66 -88 Table 2. S-Parameters (VCC = 4.0 V, 50 System) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC0915 2.2-11 NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS S11 f MHz S21 S12 S22 |S11| |S21| |S12| |S22| 100 0.85 -12 11.04 166 0.00 39 0.97 -3 200 0.82 -24 10.44 152 0.00 94 0.97 -6 300 0.77 -35 9.79 140 0.00 82 0.96 -9 400 0.70 -44 8.95 128 0.00 74 0.96 -12 500 0.62 -53 8.16 117 0.00 69 0.94 -15 600 0.57 -59 7.34 109 0.00 64 0.93 -18 700 0.52 -66 6.70 100 0.00 63 0.92 -20 800 0.48 -72 6.02 93 0.00 65 0.90 -23 900 0.43 -77 5.58 86 0.00 68 0.89 -26 1000 0.39 -82 5.11 80 0.00 71 0.88 -28 1100 0.36 -87 4.71 75 0.00 81 0.87 -31 1200 0.34 -92 4.33 69 0.00 114 0.86 -33 1300 0.32 -95 4.08 63 0.00 152 0.84 -36 1400 0.30 -99 3.80 59 0.00 114 0.83 -38 1500 0.28 -104 3.54 54 0.00 -118 0.82 -41 1600 0.26 -108 3.35 49 0.00 -114 0.81 -44 1700 0.25 -113 3.13 44 0.01 -111 0.80 -47 1800 0.25 -117 2.96 40 0.01 -110 0.79 -49 1900 0.24 -120 2.79 35 0.01 -111 0.78 -52 2000 0.23 -123 2.64 31 0.01 -111 0.77 -55 2100 0.22 -126 2.52 26 0.01 -112 0.76 -58 2200 0.22 -130 2.40 22 0.01 -114 0.75 -61 2300 0.23 -135 2.25 18 0.02 -115 0.74 -64 2400 0.23 -136 2.19 13 0.02 -117 0.73 -67 2500 0.23 -142 2.05 8 0.02 -119 0.72 -71 2600 0.23 -146 1.96 4 0.02 -1 0.71 -74 2700 0.24 -149 1.87 0 0.03 177 0.70 -77 2800 0.24 -151 1.78 -4 0.03 175 0.69 -80 2900 0.25 -153 1.70 -9 0.03 173 0.68 -84 3000 0.25 -156 1.62 -13 0.04 171 0.68 -87 Table 3. S-Parameters (VCC = 5.0 V, 50 System) MRFIC0915 2.2-12 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS S11 f MHz 2.7 4.0 4.5 5.0 0 f (GHz) NFmin (dB) MAG e RN () 0.30 0.50 0.70 0.90 1.00 1.50 2.00 2.40 1.26 1.48 1.71 1.96 2.09 2.82 3.67 4.43 0.47 0.42 0.38 0.34 0.33 0.27 0.25 0.25 18 29 41 53 60 94 132 165 0.47 0.44 0.42 0.41 0.40 0.38 0.36 0.36 0.30 0.50 0.70 0.90 1.00 1.50 2.00 2.40 1.27 1.41 1.56 1.73 1.82 2.32 2.91 3.44 0.37 0.33 0.30 0.27 0.25 0.21 0.20 0.21 18 29 40 52 59 93 133 168 0.37 0.35 0.33 0.32 0.31 0.30 0.29 0.29 0.30 0.50 0.70 0.90 1.00 1.50 2.00 2.40 1.41 1.53 1.67 1.83 1.92 2.42 3.03 3.61 0.38 0.34 0.31 0.27 0.26 0.20 0.17 0.16 18 26 36 46 52 85 126 165 0.40 0.38 0.37 0.36 0.35 0.33 0.32 0.34 0.30 0.50 0.70 0.90 1.00 1.50 2.00 2.40 1.36 1.47 1.60 1.74 1.82 2.25 2.78 3.27 0.33 0.29 0.26 0.24 0.22 0.18 0.17 0.18 18 28 40 52 58 93 133 170 0.35 0.33 0.32 0.31 0.30 0.29 0.28 0.29 Table 4. Typical Noise Parameters (50 System) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC0915 2.2-13 NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS VCC (Volts) MRFIC0916 General Purpose RF Cascode Amplifier The MRFIC0916 is a cost-effective, high isolation cascode silicon monolithic amplifier in the industry standard SOT-143 surface mount package designed for general purpose RF applications. On chip bias circuitry sets the bias point while matching is accomplished off chip affording the maximum in application flexibility. * * * * * * GENERAL PURPOSE RF CASCODE AMPLIFIER Usable Frequency Range = 100 to 2500 MHz SEMICONDUCTOR TECHNICAL DATA 18.5 dB typical gain at 850 MHz, VCC = 2.7 V 2.3 dBm typical Output Power at 1.0 dB Gain Compression at 850 MHz, VCC = 2.7 V 44 dB Typical Reverse Isolation at 850 MHz 5.6 mA Max Bias Current at VCC = 2.7 V Pin 1. 2. 3. 4. 2.7 to 5.0 V Supply Gnd RF In RF Out Gnd 4 1 PLASTIC PACKAGE CASE 318A (SOT-143, Tape & Reel Only) ORDERING INFORMATION Device MRFIC0916T1 Device Marking Package 16 SOT-143 Functional Block Diagram MRFIC0916 2.2-14 Gnd 1 3 RF Out RF In 2 4 Gnd MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC0916 MAXIMUM RATINGS (TA = 25C, unless otherwise noted) Symbol Value Unit Supply Voltage Rating VCC 6.0 Vdc RF Input Power PRF 10 dBm Power Dissipation PDIS 100 mW ICC 20 mA RqJC 250 C/W Storage Temperature Range Tstg -65 to 150 C Operating Case Temperature TC -40 to 100 C Supply Current Thermal Resistance, Junction to Case NOTE: Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Electrical Characteristics tables. RECOMMENDED OPERATING CONDITIONS Characteristic Symbol Min Typ Max Unit RF Frequency fRF 100 - 2500 MHz Supply Voltage VCC 2.7 - 5.0 Vdc ELECTRICAL CHARACTERISTICS (VCC = 2.7 V, TA = 25C, fRF = 850 MHz, Tested in Circuit Shown in Figure 1, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit 16.5 18.5 20.5 dB Noise Figure - 1.9 - dB Power Output at 1.0 dB Gaim Compression 0 2.3 - dBm Output 3rd Order Intercept Point - 11 - dBm Reverse Isolation - 44 - dB 3.8 4.7 5.6 mA Small Signal Gain Supply Current Figure 1. 850 MHz Applications Circuit Configuration VCC C2 C1 L1 C1 C2 C3 C4 L1 L2 - - - - - - 100 pF 0.01 F 1.4 pF 100 pF 8.2 nH 6.8 nH C3 C4 RF In 1 3 2 4 RF Out L2 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC0916 2.2-15 MRFIC0916 Figure 3. Output Power versus Input Power 15 40 50 System TA = 25C 35 5.0 V 30 Pout , OUTPUT POWER (dBm) GU max, MAXIMUM UNILATERAL GAIN (dB) Figure 2. GUmax versus Frequency 25 4.0 V 20 VCC = 2.7 V 15 10 5.0 0 0.5 1.0 1.5 2.0 10 5.0 V 4.0 V 5.0 0 VCC = 2.7 V -5.0 -10 -15 -30 2.5 f = 850 MHz TA = 25C -25 -20 -15 -10 -5.0 Pin, INPUT POWER (dBm) f, FREQUENCY (GHz) Figure 4. Supply Current versus Input Power 18 ICC, SUPPLY CURRENT (mA) 18 14 f = 850 MHz TA = 25C 12 10 5.0 V 8.0 6.0 4.0 4.0 V VCC = 2.7 V 2.0 0 -30 -25 -20 -15 -10 -5.0 0 Pin, INPUT POWER (dBm) MRFIC0916 2.2-16 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 0 MRFIC0916 Table 1. Scattering Parameters (VCC = 2.7 V, 50 System) W f (MH ) (MHz) S11 S21 S12 S22 |S11| 6f |S21| 6f |S12| 6f |S22| 6f 100 0.806 -17.01 12.03 162.32 0.001 -0.14 0.956 -4.69 200 0.765 -33.28 11.18 145.74 0.001 71.58 0.948 -8.69 300 0.713 -47.99 10.18 130.99 0.002 69.67 0.945 -13.23 400 0.652 -61.35 9.06 118.01 0.003 64.61 0.930 -17.35 500 0.574 -70.94 8.06 106.50 0.003 62.93 0.904 -20.85 600 0.533 -81.00 7.09 96.50 0.003 61.94 0.891 -24.71 700 0.493 -89.33 6.36 87.60 0.003 63.16 0.875 -28.18 800 0.469 -97.65 5.62 79.57 0.003 66.33 0.857 -31.89 900 0.432 -103.64 5.16 72.38 0.002 80.79 0.845 -35.21 1000 0.409 -110.68 4.70 65.39 0.002 100.33 0.831 -38.86 1100 0.396 -116.17 4.29 58.75 0.002 127.72 0.815 -42.52 1200 0.383 -122.20 3.91 52.55 0.003 152.57 0.799 -45.77 1300 0.373 -126.00 3.66 46.34 0.004 164.39 0.789 -49.49 1400 0.369 -131.29 3.38 40.61 0.006 169.63 0.776 -53.23 1500 0.366 -134.46 3.14 35.29 0.008 172.81 0.762 -56.86 1600 0.366 -140.07 2.93 29.63 0.011 172.47 0.751 -60.74 1700 0.364 -143.07 2.75 23.86 0.013 172.79 0.738 -64.66 1800 0.368 -147.48 2.58 18.42 0.016 171.54 0.727 -68.29 1900 0.377 -148.91 2.42 13.15 0.020 170.15 0.719 -72.29 2000 0.381 -153.42 2.27 7.58 0.023 167.89 0.707 -76.58 2100 0.394 -155.23 2.15 2.46 0.027 165.86 0.695 -80.50 2200 0.396 -158.91 2.03 -3.00 0.032 163.46 0.685 -84.85 2300 0.416 -160.43 1.90 -8.32 0.037 161.00 0.672 -88.93 2400 0.424 -162.98 1.81 -13.30 0.042 158.00 0.662 -93.38 2500 0.434 -166.35 1.68 -18.45 0.047 155.58 0.654 -97.89 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC0916 2.2-17 MRFIC0916 Table 2. Scattering Parameters (VCC = 4 V, 50 System) W f (MH ) (MHz) S11 S21 S12 S22 |S11| 6f |S21| 6f |S12| 6f |S22| 6f 100 0.744 -17.43 16.979 160.38 0.001 -2.89 0.955 -4.40 200 0.691 -33.58 15.442 142.46 0.001 83.36 0.950 -8.33 300 0.627 -47.53 13.633 127.28 0.002 76.39 0.946 -12.79 400 0.558 -59.50 11.851 114.52 0.002 70.12 0.931 -16.75 500 0.482 -67.02 10.284 103.51 0.002 67.02 0.907 -20.11 600 0.440 -75.50 8.957 94.12 0.002 66.00 0.895 -23.85 700 0.401 -81.87 7.930 85.95 0.002 68.71 0.880 -27.22 800 0.377 -88.89 7.003 78.57 0.002 73.50 0.863 -30.83 900 0.348 -93.11 6.348 71.96 0.002 90.55 0.852 -34.06 1000 0.328 -98.88 5.747 65.59 0.002 113.74 0.838 -37.62 1100 0.317 -103.27 5.223 59.57 0.002 146.45 0.822 -41.18 1200 0.306 -108.54 4.765 53.98 0.003 165.49 0.808 -44.34 1300 0.301 -111.30 4.425 48.39 0.004 175.51 0.798 -47.95 1400 0.297 -116.30 4.082 43.18 0.006 177.46 0.785 -51.59 1500 0.298 -118.89 3.790 38.32 0.008 179.45 0.771 -55.11 1600 0.298 -124.58 3.531 33.13 0.011 178.69 0.760 -58.88 1700 0.301 -127.19 3.300 28.02 0.014 178.02 0.748 -62.66 1800 0.305 -131.73 3.093 23.10 0.016 176.25 0.737 -66.16 1900 0.319 -133.16 2.901 18.34 0.020 174.44 0.729 -70.03 2000 0.324 -137.94 2.724 13.33 0.023 172.03 0.717 -74.16 2100 0.339 -140.09 2.575 8.67 0.027 169.82 0.706 -77.92 2200 0.342 -143.98 2.434 3.79 0.032 166.99 0.696 -82.07 2300 0.367 -146.00 2.278 -0.98 0.036 164.37 0.684 -86.04 2400 0.375 -148.75 2.166 -5.56 0.042 161.35 0.674 -90.25 2500 0.387 -152.75 2.020 -10.12 0.046 158.69 0.666 -94.64 MRFIC0916 2.2-18 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC0916 Table 3. Scattering Parameters (VCC = 5 V, 50 System) W f (MH ) (MHz) S11 S21 S12 S22 |S11| 6f |S21| 6f |S12| 6f |S22| 6f 100 0.707 -17.56 20.04 159.03 0.001 -7.95 0.954 -4.25 200 0.648 -33.40 17.93 140.29 0.001 86.24 0.950 -8.15 300 0.579 -46.60 15.53 124.94 0.002 78.79 0.946 -12.54 400 0.509 -57.44 13.31 112.38 0.002 72.27 0.931 -16.42 500 0.438 -63.51 11.40 101.70 0.002 69.34 0.908 -19.68 600 0.397 -70.90 9.87 92.70 0.002 69.55 0.896 -23.35 700 0.363 -76.05 8.69 84.92 0.002 71.59 0.882 -26.64 800 0.340 -82.18 7.67 77.89 0.002 79.44 0.865 -30.20 900 0.316 -85.44 6.91 71.60 0.002 95.59 0.855 -33.36 1000 0.298 -90.52 6.24 65.56 0.001 121.55 0.841 -36.86 1100 0.290 -94.44 5.67 59.82 0.002 152.13 0.826 -40.37 1200 0.280 -99.17 5.17 54.53 0.003 169.84 0.811 -43.48 1300 0.277 -101.65 4.79 49.25 0.005 177.80 0.802 -47.02 1400 0.274 -106.49 4.42 44.27 0.006 -179.84 0.790 -50.59 1500 0.278 -109.07 4.10 39.65 0.008 -179.19 0.776 -54.04 1600 0.276 -114.88 3.82 34.68 0.011 -179.68 0.765 -57.73 1700 0.281 -117.46 3.56 29.88 0.013 179.47 0.753 -61.43 1800 0.285 -122.11 3.34 25.21 0.016 177.73 0.742 -64.85 1900 0.300 -123.94 3.14 20.70 0.019 175.80 0.734 -68.66 2000 0.305 -128.93 2.95 15.91 0.023 173.47 0.723 -72.71 2100 0.322 -131.48 2.78 11.50 0.027 171.04 0.712 -76.37 2200 0.324 -135.50 2.63 6.84 0.031 168.25 0.703 -80.42 2300 0.351 -138.04 2.47 2.33 0.036 165.47 0.691 -84.31 2400 0.358 -140.88 2.34 -2.05 0.041 162.71 0.681 -88.42 2500 0.371 -145.28 2.19 -6.40 0.046 160.19 0.674 -92.74 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC0916 2.2-19 MRFIC0916 Table 4. Typical Noise Parameters (50 System) VCC (Volts) 27 2.7 40 4.0 45 4.5 50 5.0 MRFIC0916 2.2-20 0 f (GHz) NFmin (dB) MAG e RN () 0.3 1.48 0.08 -145 0.18 0.5 1.48 0.11 -52 0.23 0.7 1.52 0.14 27 0.25 0.9 1.61 0.17 93 0.21 1.0 1.67 0.19 121 0.18 1.5 2.16 0.26 -152 0.17 2.0 2.94 0.33 -150 0.22 2.4 3.78 0.38 150 0.26 0.3 1.66 0.07 114 0.24 0.5 1.62 0.09 118 0.21 0.7 1.62 0.12 124 0.19 0.9 1.67 0.14 130 0.18 1.0 1.71 0.15 133 0.17 1.5 2.08 0.21 152 0.17 2.0 2.72 0.27 175 0.19 2.4 3.44 0.32 -164 0.232 0.3 1.85 0.14 149 0.20 0.5 1.74 0.14 146 0.18 0.7 1.69 0.14 144 0.17 0.9 1.69 0.15 144 0.17 1.0 1.71 0.16 145 0.17 1.5 2.04 0.20 155 0.18 2.0 2.71 0.26 175 0.20 2.4 3.50 0.33 -161 0.24 0.3 1.83 0.10 133 0.27 0.5 1.76 0.11 136 0.23 0.7 1.73 0.13 141 0.20 0.9 1.75 0.14 146 0.18 1.0 1.78 0.15 148 0.17 1.5 2.10 0.19 163 0.17 2.0 2.71 0.25 -179 0.20 2.4 3.42 0.30 -163 0.25 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC0919 3.6 V GSM GaAs Integrated Power Amplifier The MRFIC0919 is a single supply, RF power amplifier designed for the 2.0 W GSM900 handheld radio. The negative power supply is generated inside the chip using RF rectification, which avoids any spurious signal. A built in priority switch is provided to prevent Drain Voltage being applied on the RF lineup if not properly biased by the Negative Voltage. The device is packaged in the TSSOP-16EP package, with exposed backside pad, which allows excellent electrical and thermal performance through a solderable contact. * Target 3.6 V Characteristics: RF Input Power: 3.0 dBm RF Output Power: 35.3 dBm Typical Efficiency: 53% Typical * Single Positive Supply Solution * * * GSM 880 - 915 MHz INTEGRATED POWER AMPLIFIER SEMICONDUCTOR TECHNICAL DATA Negative Voltage Generator 16 Positive Step-up Voltage Generator 1 VSS Check Switch for Gate-Drain Priority PLASTIC PACKAGE CASE 948L (TSSOP-16EP, Tape and Reel Only) PIN CONNECTIONS Simplified Block Diagram VD1 VD2 VD3 RF In RF Out VP 1 16 VDB VD3 2 15 Gnd RF Out 3 14 RF In RF Out 4 13 VD1 RF Out 5 12 Gnd Bias3 6 11 VD2 Bias2 7 10 VSC Bias1 8 9 VSS Bias1 Bias2 Bias3 Negative Voltage Generator (Top View) VSS VP VSC VDB This device contains 8 active transistors. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ORDERING INFORMATION Device Operating Temp Range Package MRFIC0919R2 TA = -40 to 85C TSSOP-16EP MRFIC0919 2.2-21 MRFIC0919 MAXIMUM RATINGS Symbol Value Unit Supply Voltage Rating VD1, 2, 3 6.0 V RF Input Power Pin 12 dBm Pout 38 dBm Operating Case Temperature Range TC -40 to 85 C Storage Temperature Range Tstg -55 to 150 C RF Output Power NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Recommended Operating Contitions or Electrical Characteristics tables. 2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) 250 V and Machine Model (MM) 60 V. This device is rated Moisture Sensitivity Level (MSL) 4. Additional ESD data available upon request. RECOMMENDED OPERATING CONDITIONS Characteristic Supply Voltage Input Power Symbol Min Typ Max Unit VDB, VD1, 2, 3 - 3.0 to 5.5 - Vdc Pin - 3.0 to 8.0 - dBm ELECTRICAL CHARACTERISTICS (VDB = 3.6 V, VD1, 2, 3 = 3.6 V, Pin = 3.0 dBm, Peak measurement at 12.5% duty cycle, 4.6 ms Period, TA = 25C, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Frequency Range BW 880 - 915 MHz Output Power Pout 34.5 35.3 - dBm Power Added Efficiency PAE 45 53 - % Output Power at Low Voltage (VD1, 2, 3 = 3.0 V) Pout 33 33.7 - dBm Harmonic Output 2fo 3fo - - - - 40 45 35 40 Input Return Loss |S11| - 12 - dB Output Power Isolation (Pin = 8.0 dBm, VDB = 3.0 V, VD1, 2&3 = 0 V) Poff - -32 - dBm Noise Power in Rx band 925 to 960 MHz (100 kHz measurement bandwidth) NP - -90 - dBm Negative Voltage (Pin = 3.0 dBm, VDB = 3.0 V, VD1, 2&3 = 0 V) Vss -4.85 - - V Ts - 0.7 - s Pspur - - -60 dBc dBc Negative Voltage Setting Time (Pin = 3.0 dBm, VDB stepped from 0 to 3.0 V) Stability-Spurious Output (Pout = 5.0 to 35 dBm, Load VSWR 6:1 all phase angles, source VSWR = 3:1, at any phase angle, Adjust VD1, 2&3 for specified power) Load Mismatch Stress (Pout = 5.0 to 35 dBm, Load VSWR = 10:1 all phase angles, 5 seconds, Adjust VD1, 2&3 for specified power) Positive Voltage (Pin = 3.0 dBm, VDB = 3.0 V) MRFIC0919 2.2-22 No Degradation in Output Power Before & After Test VP 6.0 - - V MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC0919 Table 1. Optimum Loads Derived from Circuit Characterization Zin OHMS ZOL* OHMS f MHz R jX R jX 880 885 890 895 900 905 910 915 9.83 9.88 9.83 9.82 9.82 9.79 9.78 9.75 -75.84 -76.75 -77.65 -78.60 -79.50 -80.35 -81.23 -82.18 1.79 1.78 1.76 1.75 1.74 1.73 1.71 1.70 2.34 2.46 2.57 2.67 2.80 2.90 3.00 3.13 Zin represents the input impedance of the device. ZOL* represents the conjugate of the optimum output load to present to the device. Figure 1. Reference Circuit VSS VDB VP VD1, 2 and 3 D1 C5 R1 R2 C6 C2 R3 C3 C1 50 In GSM 9 10 8 7 T1 11 12 6 5 T2 13 14 L1 MRFIC0919 TSSOP16EP 15 16 C12 4 3 C9 C10 Note: Use highQ cap for C9 and C10 for best PAE/Pout C11 T4 2 1 T5 T3 50 Out GSM C7 C8 L2 C4 C1, C3, C4, C7, C11 C2, C6 C5 C8 C9 C10 C12 L1 L2 D1 56 pF 10 nF 330 pF 4.7 pF 12 pF 6.8 pF 8.2 pF 12 nH 6.8 nH Zener 5.1 V AVX Accu-F AVX Accu-F R1, R2 R3 T1 T2 T3 T4 T5 12 k 6.8 k 60 Microstrip Line, L = 3.0 mm 60 Microstrip Line, L = 11 mm 50 Microstrip Line, L = 17 mm 30 Microstrip Line, L = 1.0 mm 30 Microstrip Line, L = 7.0 mm MMSZ4689T1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC0919 2.2-23 MRFIC0919 Figure 2. 3.6 V GSM IPA MRFIC0919 Application Circuit 3.0 V 0V TxEn BS 12 Vbat CE 8 3.0 V DCS 0V GSM 7 Vramp 11 1 MC33170 Pin 1 MTSF3N02HD 5 A B 6 C5 10 F 2.0 V 0V 3 U1 G R11 10 k R2 10 k A1 (Micro 8) S Pin 1 D R5 0 C39 0.1 F R1 10 k C1 100 nF 2 VD1 VD2 VSS VDB VP 2 4 5 6 3 10 8 9 Note: Use highQ cap for C14 and C15 for best PAE/Pout R13A 6.8 k Zc = 60 L = 3.0 mm C20 8.2 pF Gnd R13C 12 k C8 10 nF Zc = 60 L = 11 mm 50 In GSM A R13B 12 k C6 56 pF 56 pF 10 VD3 C21 330 pF C7 10 nF 4 9 10 8 7 11 12 6 5 13 14 L2 12 nH L4 6.8 nH 15 16 MRFIC0919 TSSOP16EP 4 3 2 1 C14 12 pF Zc = 30 L = 1.0 mm C15 6.8 pF Zc = 30 L = 7.0 mm Zc = 50 L = 17 mm C12 4.7 pF C16 56 pF 50 Out GSM C17 56 pF C11 56 pF Note: I/O labels and pin numbers refer to demoboard connector pin out. MRFIC0919 2.2-24 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC0919 Figure 3. 3.6 V GSM & DCS IPA Dual-Band Application Circuit with Companion Chip & NMOS Switch 3.0 V 0V TxEn BS 12 Vbat CE 3.0 V DCS 8 7 Vramp 11 1 2.0 V 0V GSM 0V MC33170 Pin 1 MTSF3N02HD 5 G A C5 10 F B 3 U1 A1 (Micro 8) R11 10 k R2 10 k S 6 D Pin 1 R5 0 C39 0.1 F R1 10 k C1 100 nF 2 VD1 VD2 VSS VDB VP 2 4 5 6 3 4 10 VD3 A 10 Gnd 8 9 R13B 12 k C29 330 pF C7 10 nF C6 56 pF R13A 6.8 k Zc = 60 L = 3.0 mm C4 56 pF Zc = 60 L = 11 mm 50 In GSM R13C 12 k C8 10 nF 8 10 7 11 6 12 13 Zc = 50 C40 8.2 pF 9 L2 12 nH C14 12 pF C15 6.8 pF C16 56 pF 5 MRFIC0919 50 Out GSM 4 TSSOP16EP 14 3 15 2 16 1 Zc = 30 L = 7.0 mm Zc = 50 Zc = 50 L = 17 mm C17 56 pF C8 10 nF C12 4.7 pF L4 6.8 nH C11 56 pF C25 10 nF B 8 C34 47 pF C35 22 pF R13A 15 k C41 47 nF C36 22 pF 8 10 7 Zc = 60 L = 3.0 mm 11 Zc = 60 L = 3.0 mm 12 Zc = 50 50 ID DCS L10 1.8 nH Zc = 50 L = 2.5 mm R10 680 C37 13 MRFIC1819 C9 22 pF 2 16 1 Zc = 30 L = 1.0 mm 50 Out DCS Zc = 30 L = 1.0 mm Zc = 50 L = 17 mm C22 2.7 pF L3 2.7 nH C10 330 pF C32 1.0 pF 4 TSSOP16EP 15 L8 33 nH C31 3.9 pF 5 3 Zc = 80 L = 4.0 mm R13C 7.5 k 6 0.8 pF14 L = 4.5 mm C24 22 pF C42 22 pF R13B 15 k 9 C33 22 pF C30 10 nF C26 47 pF MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC0919 2.2-25 MRFIC0919 Figure 5. Power Added Efficiency versus Frequency Figure 4. Output Power versus Frequency 57 37 VD = 4.2 V 36 3.6 V PAE, POWER ADDED EFFICIENCY (%) Pout , OUTPUT POWER (dBm) 38 35 3.0 V 34 33 TA = 25C Pin = 3.0 dBm 32 31 885 890 895 900 905 910 VD = 4.2 V 56 55 3.0 V 54 3.6 V 53 TA = 25C Pin = 3.0 dBm 52 51 880 915 885 890 f, FREQUENCY (MHz) Figure 6. Output Power versus Frequency 905 910 915 Figure 7. Output Power versus Frequency 36.4 TA = -40C Pout , OUTPUT POWER (dBm) Pout , OUTPUT POWER (dBm) 900 f, FREQUENCY (MHz) 34.5 34 25C 33.5 85C 33 VDD = 3.0 V Pin = 3.0 dBm 32.5 880 885 890 895 900 905 910 TA = -40C 36 35.6 25C 35.2 85C 34.8 VD = 3.6 V Pin = 3.0 dBm 34.4 880 915 885 890 895 900 905 910 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 8. Output Power versus Frequency Figure 9. Power Added Efficiency versus Frequency PAE, POWER ADDED EFFICIENCY (%) 37.4 TA = -40C Pout , OUTPUT POWER (dBm) 895 37 25C 36.6 85C 36.2 VD = 4.2 V Pin = 3.0 dBm 35.8 880 885 890 895 900 f, FREQUENCY (MHz) MRFIC0919 2.2-26 905 910 915 915 65 TA = -40C 61 57 25C 53 85C 49 VD = 3.6 V Pin = 3.0 dBm 45 880 885 890 895 900 905 910 915 f, FREQUENCY (MHz) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC0919 Figure 11. Power Added Efficiency versus Drain Voltage Figure 10. Output Power versus Drain Voltage 40 PAE, POWER ADDED EFFICIENCY (%) 70 30 25C and 85C 20 10 0 -10 Pin = 3.0 dBm f = 900 MHz -20 Vpos, POSITIVE VOLTAGE GENERATOR OUTPUT (V) -30 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 30 20 Pin = 3.0 dBm f = 900 MHz 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Figure 12. Positive Voltage Generator Output versus Drain Voltage Figure 13. Positive Voltage Output versus Frequency TA = -40C 25C 7.9 85C 7.8 Pin = 3.0 dBm f = 900 MHz VDB = 3.0 V 7.7 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 9.3 9.2 TA = -40C 9.1 25C 9.0 8.9 85C 8.8 VD = 3.6 V Pin = 3.0 dBm 8.7 8.6 880 5.0 885 890 895 900 905 910 VD, DRAIN VOLTAGE (V) f, FREQUENCY (MHz) Figure 14. Second Harmonics versus Drain Voltage Figure 15. Third Harmonics versus Drain Voltage 60 915 60 50 25C -40C 85C 3fo , THIRD HARMONICS (dBc) 2fo , SECOND HARMONICS (dBc) 25C VD, DRAIN VOLTAGE (V) 8.0 40 30 20 Pin = 3.0 dBm fo = 900 MHz 10 0 85C 40 VD, DRAIN VOLTAGE (V) 8.1 0 TA = -40C 50 5.0 8.2 7.6 60 0 0 Vpos, POSITIVE VOLTAGE OUTPUT (V) Pout , OUTPUT POWER (dBm) TA = -40C 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 50 25 and 85C -40C 40 30 20 Pin = 3.0 dBm fo = 900 MHz 10 5.0 VD, DRAIN VOLTAGE (V) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VD, DRAIN VOLTAGE (V) MRFIC0919 2.2-27 MRFIC0919 APPLICATIONS INFORMATION Design Philosophy The MRFIC0919 is a high performance three stage GaAs IPA (Integrated Power Amplifier) designed for GSM handheld radios (880 to 915 MHz frequency band). With a 3.6 V battery supply, it delivers typically 35.3 dBm of Output Power with 53% Power Added Efficiency. It features an internal Negative Voltage Generator based on RF rectification of the input carrier after its amplification by a dedicated buffer stage (see Internal Block Diagram). This method eliminates spurs found on the Output signal when using DC/DC converter type negative voltage generators, either on or off chip. The buffer also generates a step-up positive voltage which can be used to drive a N-MOS drain switch. The RF input power is split internally to the 3 stage RF line-up (Q1,Q2 andQ3) and the Buffer. This arrangement allows separate operation of Voltage Generation and Power Amplification for maximum flexibility. External Circuit Considerations The MRFIC0919 can be tuned by changing the values and/or positions of the appropriate external components (see Figure 1. Reference Circuit). While tuning the RF line-up, it is recommended to apply external negative supply in order to prevent any damage to the power amplifier stages. Poor tuning on the input may not provide enough RF power to operate the negative voltage generator properly. Input matching is a shunt-C, series-L low-pass structure and should be optimized at the rated RF Input power (e.g., 3.0 dBm). Since the Input line feeds both 1st stage and buffer, Input matching should be iterated with Buffer and Q1 drain matching. Note that a DC blocking capacitor is included on chip. Buffer drain is supplied and matched through a discrete chip inductor. Its value is tuned to get the maximum output from voltage generator. The step-up positive voltage available at Pin 1 is both decoupled and maximized by a small shunt capacitor. This positive voltage which is approximately twice the buffer drain voltage can be used to drive a N-MOS drain switch for best performance. Q1 drain is supplied and matched through a printed microstrip line that could be replaced by a discrete chip inductor as well. Its length (or equivalent inductor value) is tuned by sliding the RF decoupling capacitor along to get the maximum gain on the first stage. Make sure when laying out the PCB to put enough ground pads and vias close to the microstrip lines to help for this fine tuning. Q2 is supplied through a printed microstrip line that contributes also to the interstage matching in order to provide optimum drive to the final stage. The line length is very small so replacing it with a discrete inductor is not practical. Q3 drain is fed via a printed line that must handle the high supply current of that stage (2.0 to 3.0 Amp peak) without significant voltage drop. This line can be buried in an inner layer to save PCB space or be a discrete RF choke. Output matching is accomplished with a two stage low-pass network. Easy implementation is achieved with shunt capacitors mounted along a 30 microstrip transmission line. Value and position are chosen to reach a load line of 1.8 while conjugating the device output parasitics. The network must also properly terminate the MRFIC0919 2.2-28 second and third harmonic to optimize efficiency and reduce harmonic level. Use of high Q capacitor for the output matching circuit is recommended in order to get the best Output Power and Efficiency performance. Biasing Considerations The internally generated negative voltage is clamped by an external Zener diode in order to eliminate variation linked to Input power or Buffer supply. This negative voltage is used by three independent bias circuits to set the proper quiescent current of all stages. Each bias circuit is equivalent to a current source sinking its value from the bias pin. When the bias pins are grounded, nominal quiescent current and operating point of each RF stage are selected. Q1 and Buffer share the Bias1 (0.25 mA) while Q2 and Q3 have dedicated Bias2 (0.25 mA) and Bias3 (0.5 mA) respectively. It is also possible to reference those bias pins to higher voltage than Gnd by using a series resistor that drops the equivalent voltage. If those pins are left open, the corresponding stages are pinched-off. Thus the bias pins can be used as a means to select the MRFIC0919 or MRFIC1819 in a dual band configuration. The MRFIC1819 is the partner device to the MRFIC0919 and is designed for DCS1800/PCS1900 applications. Table 2. Pin Function Description Pin Symbol Description 1 VP 2 VD3 3 RF Out RF output 4 RF Out RF output 5 RF Out RF output 6 Bias3 Third stage bias 7 Bias2 Second stage bias 8 Bias1 Buffer and first stage bias 9 VSS Negative voltage output 10 VSC Negative voltage check 11 VD2 Second stage drain supply 12 Gnd Tied to ground externally 13 VD1 First stage drain supply 14 RF In RF input 15 Gnd Tied to ground externally 16 VDB Buffer stage drain supply Positive voltage output Third stage drain supply VSC is an open drain internal FET switch which is biased through the negative voltage. Consequently, this pin is high impedance when negative voltage is okay and low impedance (about 40 ) when negative voltage is missing. Operation Procedure The MRFIC0919 is a standard MESFET GaAs Power Amplifier, presence of a negative voltage to bias the RF line-up is essential in order to avoid any damage to the parts. Due to the fact that the negative voltage is generated through rectification of the RF input signal, a minimum input power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC0919 Figure 16. Drain Control through PMOS Switch level is needed for correct operation of the demoboard. The following procedure will guaranty safe operation for doing the RF measurements. Note: make sure that Bias1 (Pin 8) is connected to ground or will have equivalent potential for nominal biasing of Buffer stage. Control Considerations MRFIC0919 application uses the drain control technique developed for our previous range of GaAs IPAs (refer to application note AN1599). This method relies on the fact that for an RF amplifier operating in satuaration mode, the RF output power is proportional to the square of the Amplifier drain voltage: Pout(Watt)=k*VD(Volt)*VD(Volt). In the proposed application circuit (see Figure 2), a PMOS FET is used to switch the IPA drain and vary the drain supply voltage from 0 to battery voltage. As the PMOS FET has a non linear behavior, an OpAmp is included in the application. This OpAmp is linearizing the PMOS by sensing its drain output and gives a true linear relationship between the Control voltage and the RF output voltage. The obtained power control transfer function is so linear and repeatable than it can be used to predict the output power within a dynamic range of 25 to 30 dB over frequency and temperature. This so called "open-loop" arrangement eliminates the need for coupler and detector required for the classical but complex closed-loop control and consequently reduces the Insertion Loss from Power Amplifier to the Antenna. The block diagram (Figure 16) shows the principle of operation as implemented in the application circuit of Figure 2. The OpAmp is connected as an inverter to compensate the negative gain of the PMOS switch. PMOS Vramp Vdrain Gain Set RF In RF Out PA NOTE: The positive voltage generated by the Buffer stage can be used to supply the OpAmp and make it possible to drive a NMOS switch as a voltage follower. Doing so, the main advantage is to have a lower Rdson switch and better intrinsic linearity. The following plot illustrates the "open-loop" performance as far as temperature stability. The measured datas are displayed in a log-scale in order to have a good representation of both the dynamic and the linearity of control. The variation of Pout accross the frequency band are also very small (less than 1.0 dB ripple) and are kept to that small amount when controlling Pout through the Drain voltage. Figure 17. Pout versus VD 40 35 30 Pout (dBm) 1. Apply RF input power (RF In) >3.0 dBm. 2. Apply VDB = 3.0 to 5.0 V. 3. Check that Vss reaches approximatively -5.1 V (settling of the negative voltage). 4. Apply VD1,2&3 = 3.0 to 5.5 V. 5. Measure RF output power and relevant parameters. Proceed in the reverse order to switch off the Power Amplifier. For linear operation, an external negative voltage will have to be supplied to the VSS pin to maintain initial quiescent operating conditions of the FET amplifiers since the RF input will not provide sufficient voltage to operate the negative voltage generator. When using an external negative voltage supply, supply voltage to VDB (Pin 16) would no longer be required. Vbat 25 20 -40C 15 85C 10 25C 5.0 -10 -8.0 -6.0 -4.0 -2.0 0 2.0 4.0 6.0 8.0 VD (dBV) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC0919 2.2-29 MRFIC0919 Figure 18. Timing Guide 3.0 V OpAmp shdn 0V 3.0 V 20 s Tx En (&RF In) 0V 2.0 V Vramp 0V 2.0 s Burst mode Use Figure 18 as a guide line to perform burst mode measurements with the complete application circuit of Figure 2. Notice that the VSC pin is connected to Vramp (through a resistor) and act as a pull down when negative voltage is missing so that drain voltage is not applied to the RF line-up. - Bursting the OpAmp with its Pin 8 (shdn) is not mandatory during a call as the OpAmp current consumption is very small (1.0 to 2.0 mA). This pin is mainly used for the idle mode of the radio. In any case, the wake-up time of the OpAmp is very short. MRFIC0919 2.2-30 - Vramp can be applied soon after Tx EN since the internal negative voltage generator settles in less than 2.0 s. - Tx EN signal can be used to switch the input power (using a driver or attenuator) in order to provide higher isolation for on/off burst dynamic. References (Motorola application notes) AN1599 - Power Control with the MRFIC0913 GaAs Integrated Power Amplifier and MC33169 Support IC. AN1602 - 3.6 V and 4.8 V GSM/DCS1800 Dual Band PA Application with DECT capability Using Standard Motorola RFIC's. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC0930 900 MHz GaAs Low Noise Amplifier with Gain Control Designed primarily for use in 900 MHz wireless communication systems such as GSM, AMPS, and Industrial, Scientific, and Medical (ISM) band applications. The MRFIC0930 is a two-stage low noise amplifier with an integrated step attenuator and is packaged in a low-cost SO-8 package. The MRFIC0930DM is packaged in the smaller Micro-8 package. The attenuator is controlled by a Vgain Pin. The LNA can be turned off during transmit mode to save current by using the Rx Enable Pin. The amplifier can be matched to optimize gain or noise figure with simple off-chip input matching. * * * * * * * * * * 900 MHz GaAs LOW NOISE AMPLIFIER WITH GAIN CONTROL SEMICONDUCTOR TECHNICAL DATA Usable Frequency Range = 800 to 1000 MHz 8 19 dB Typ Gain Gain Attenuation = 18 dB (Typ) 1 (Scale 2:1) 1.7 dB Typ Noise Figure PLASTIC PACKAGE CASE 751 (SO-8, Tape & Reel Only) Simple Off-chip Matching for Maximum Gain/Noise Figure Flexibility High Reverse Isolation = 41 dB (Typ) Low Power Consumption = 24 mW (Typ) Single Bias Supply = 2.7 to 4.5 V Low Standby Current = 20 A (Typ) 8 Low Cost Surface Mount Plastic Package 1 (Scale 2:1) DM SUFFIX PLASTIC PACKAGE CASE 846A (Micro-8, Tape & Reel Only) PIN CONNECTIONS Simplified Block Diagram RF In Gnd VD1 Rx Enable Vgain 1 8 2 7 3 6 4 5 Gnd Vgain Gnd RF Out/VD2 (Top View) RF Out/VD2 RF In ORDERING INFORMATION Device Operating Temp Range MRFIC0930R2 TA = -30 to 70C This device contains 12 active transistors. MRFIC0930DMR2 Package SO-8* Tape & Reel Micro-8** Tape & Reel *2,500 Units per 16 mm, 13 inch reel. **2,500 Units per 12 mm, 13 inch reel. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC0930 2.2-31 MRFIC0930 MAXIMUM RATINGS (TA = 25C, unless otherwise noted) Rating Symbol Value Unit Supply Voltage VD1, VD2 5.5 Vdc RF Input Power PRF 3 dBm Gain Control Voltage Vgain 5.5 Vdc RX Enable 5.5 Vdc Tstg -65 to 150 C TA -30 to 70 C Enable Voltage Storage Temperature Range Operating Ambient Temperature NOTES: 1. Meets Human Body Model (HBM) 750 V and Machine Model (MM) 100 V. 2. ESD data available upon request. RECOMMENDED OPERATING RANGES Symbol Min Typ Max Unit RF Frequency Parameter fRF 800 - 1000 MHz Supply Voltage VD1, VD2 2.7 - 4.5 Vdc Vgain, High Gain Vgain - 3.0 - Vdc Vgain, Low Gain Vgain - 0 - Vdc Rx Enable Voltage, On Rx Enable 2.7 - VD1, VD2 Vdc Rx Enable Voltage, Off Rx Enable 0 - 0.2 Vdc NOTE: To bias, apply VD1 and VD2 before Rx Enable. ELECTRICAL CHARACTERISTICS (VD1, VD2 = 2.8 V, TA = 25C, RF = 940 MHz, Rx Enable = 2.8 V, V Gain = 2.8 V, RF In = -30 dBm, unless otherwise noted. Tested in Circuit Shown in Figure 1.) Characteristic Symbol Min Typ Max 17 17.5 19 19 21 21.5 S21 - 0.8 4.0 dB NF - 1.7 3.0 dB RF Gain MRFIC0930 MRFIC0930DM S21 RF Gain (Vgain = 0 V) SSB Noise Figure [Note] Unit dB SSB Noise Figure (Vgain = 0 V) [Note] NF - 10.4 - dB RF Input 3rd Order Intercept Point [Note] IIP3 -12 -9.0 - dBm RF Input 3rd Order Intercept Point (Vgain = 0 V) [Note] IIP3 -7.0 -5.7 - dBm Input 1.0 dB Gain Compression [Note] P1dB -21.5 -20.8 - dBm Input 1.0 dB Gain Compression (Vgain = 0 V) [Note] P1dB -16 -11 - dBm Reverse Isolation (S12) S12 - 41 - dB Input Return Loss S11 - 15 - dB Input Return Loss (Vgain = 0 V) S11 - 15 - dB Output Return Loss S22 - 15 - dB Output Return Loss (Vgain = 0 V) S22 - 12 - dB Supply Current Rx Mode ID - 8.5 12 mA Supply Current Standby Mode (Rx Enable = 0 V) ID - 20 200 mA NOTE: Guaranteed by design. MRFIC0930 2.2-32 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC0930 Figure 1. 900 MHz Test Circuit L1 C3 RF In 1 8 2 7 C1 V Gain C7 VD1 3 6 4 5 C5 C2 Rx Enable RF Out C6 R1 L2 C4 For MRFIC0930: C1 = 2.2 pF C2 = 2.1 pF C3, C4, C5, C6, C7 = 1,000 pF L1 = 18 nH L2 = 10 nH R1 = 220 For MRFIC0930DM: C1 = 1.3 pF C2 = 2.1 pF C3, C4, C5, C6, C7 = 1000 pF L1 = 22 nH L2 = 8.2 nH R1 = 180 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA VD2 MRFIC0930 2.2-33 MRFIC0930 TYPICAL CHARACTERISTICS (For SO-8 Packaged MRFIC0930) Figure 3. Reverse Isolation versus Frequency Figure 2. Reverse Isolation versus Frequency -39 -40 TA = -25C -41 ISOLATION (dB) REVERSE ISOLATION (dB) -40 -42 70C -43 25C -44 TA = -25C -41 -42 25C 70C -43 -44 VD = 2.8 V Vgain = 0 V -45 -46 800 820 840 860 880 900 920 940 960 VD = 2.8 V Vgain = 2.8 V -45 980 -46 800 820 1000 840 860 880 900 920 940 960 980 100 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 4. Gain versus Frequency Figure 5. Gain Attenuation versus Frequency 22 18.8 GAIN (dB) TA = -25C 18 70C 25C 16 14 800 820 840 860 880 900 920 VD = 2.8 V Vgain = 2.8 V Pin = -30 dBm 940 960 GAIN ATTENUATION (dB) 18.6 20 TA = -25C 18.4 25C 18.2 70C 18 VD = 2.8 V Vgain = 0 V Pin = -30 dBm 17.8 17.6 800 980 1000 820 840 860 f, FREQUENCY (MHz) Figure 6. Gain versus Frequency 920 940 960 980 1000 19.4 19.2 22 3.0 V GAIN ATTENUATION (dB) VD = 4.5 V 20 GAIN (dB) 900 Figure 7. Gain Attenuation versus Frequency 24 2.8 V 18 16 14 Vgain = VD TA = 25C Pin = -30 dBm 12 10 800 880 f, FREQUENCY (MHz) 820 840 860 880 900 920 f, FREQUENCY (MHz) MRFIC0930 2.2-34 940 960 19 VD = 4.5 V 18.8 18.6 18.4 3.0 V 18.2 18 Vgain = VD TA = 25C Pin = -30 dBm 2.8 V 17.8 980 1000 17.6 800 820 840 860 880 900 920 940 960 980 1000 f, FREQUENCY (MHz) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC0930 TYPICAL CHARACTERISTICS (For SO-8 Packaged MRFIC0930) Figure 9. Input Power versus Output Power Figure 8. Input Power versus Output Power -4.0 VD = 4.5 V Pout , OUTPUT POWER (dBm) Pout , OUTPUT POWER (dBm) 4.0 3.0 V 0 2.8 V -4.0 -8.0 -12 -30 f = 940 MHz TA = 25C Vgain = VD -28 -26 -24 -22 -20 -18 -16 -14 -12 -8.0 -12 -16 2.8 V -20 -24 f = 940 MHz TA = 25C Vgain = 0 V -28 -32 -30 -10 -28 -26 Pin, INPUT POWER (dBm) Figure 10. Input Power versus Output Power -22 -20 -18 -16 -10 TA = -25C Pout , OUTPUT POWER (dBm) 0 70C -4.0 -6.0 25C -8.0 f = 940 MHz VD = 2.8 V Vgain = 2.8 V -10 -12 -28 -26 -24 -22 -20 -18 -16 -14 -12 -15 70C -20 25C -25 f = 940 MHz VD = 2.8 V Vgain = 0 V -30 -35 -30 -28 -10 -26 Pin, INPUT POWER (dBm) -24 -22 -20 -18 -16 -14 -12 -10 Pin, INPUT POWER (dBm) Figure 12. Noise Figure versus Frequency Figure 13. Noise Figure versus Frequency 3.0 16 VD = 2.8 V Vgain = 0 V 2.5 70C 2.0 25C 1.5 TA = -25C 1.0 VD = 2.8 V Vgain = 2.8 V 820 840 860 880 900 920 940 960 NF, NOISE FIGURE (dBm) 15 NF, NOISE FIGURE (dBm) -12 Figure 11. Input Power versus Output Power TA = -25C -2.0 0.5 800 -14 -10 2.0 Pout , OUTPUT POWER (dBm) -24 Pin, INPUT POWER (dBm) 4.0 -14 -30 VD = 4.5 V 3.0 V 980 1000 f, FREQUENCY (MHz) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 14 13 12 70C 11 25C 10 9.0 8.0 800 TA = -25C 820 840 860 880 900 920 940 960 980 1000 f, FREQUENCY (MHz) MRFIC0930 2.2-35 MRFIC0930 TYPICAL CHARACTERISTICS (For Micro-8 Packaged MRFIC0930DM) Figure 15. Reverse Isolation versus Frequency Figure 14. Reverse Isolation versus Frequency -45 TA = 70C TA = 70C 25C REVERSE ISOLATION (dB) REVERSE ISOLATION (dB) -46 -25C -48 -50 VD = 2.8 V Vgain = 2.8 V -52 800 850 950 900 25C -25C -47 -49 VD = 2.8 V Vgain = 0 V -51 800 1000 850 Figure 16. Gain versus Frequency GAIN ATTENUATION (dB) GAIN (dB) TA = -25C 18 25C 70C VD = 2.8 V Vgain = 2.8 V Pin = -30 dBm 16 840 880 920 960 TA = -25C 19.5 25C 70C 19 VD = 2.8 V Vgain = 0 V Pin = -30 dBm 18.5 800 1000 820 840 860 f, FREQUENCY (MHz) 880 900 920 940 960 980 1000 f, FREQUENCY (MHz) Figure 18. Gain versus Frequency Figure 19. Gain Attenuation versus Frequency 25 20.5 4.5 V GAIN ATTENUATION (dB) 20 3.0 V GAIN (dB) 20 2.8 V 15 Vgain = VD TA = 25C Pin = -30 dBm 850 900 f, FREQUENCY (MHz) MRFIC0930 2.2-36 1000 20 20 10 800 950 Figure 17. Gain Attenuation versus Frequency 22 14 800 900 f, FREQUENCY (MHz) f, FREQUENCY (MHz) 950 VD = 4.5 V 19.5 19 3.0 V 18.5 2.8 V 18 Vgain = 0 V TA = 25C Pin = -30 dBm 17.5 1000 17 800 820 840 860 880 900 920 940 960 980 1000 f, FREQUENCY (MHz) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC0930 TYPICAL CHARACTERISTICS (For Micro-8 Packaged MRFIC0930DM) Figure 21. Input Power versus Output Power Figure 20. Input Power versus Output Power 8.0 -5.0 Pout , OUTPUT POWER (dBm) Pout , OUTPUT POWER (dBm) 4.5 V 4.0 3.0 V 2.8 V 0 -4.0 f = 940 MHz TA = 25C Vgain = VD -8.0 -12 -30 -26 -22 -18 -14 -10 4.5 V 3.0 V -20 f = 940 MHz TA = 25C Vgain = 0 V -25 -30 -30 -10 -26 Pin, INPUT POWER (dBm) Figure 22. Input Power versus Output Power -14 -10 Figure 23. Input Power versus Output Power TA = -25C 0 Pout , OUTPUT POWER (dBm) Pout , OUTPUT POWER (dBm) -18 -10 70C 25C -4.0 -8.0 f = 940 MHz VD = 2.8 V Vgain = 2.8 V -28 -26 -24 -22 -20 -18 -16 -14 -12 25C -20 f = 940 MHz VD = 2.8 V Vgain = 0 V -25 -35 -30 -28 -10 70C -25C -15 -26 -24 -22 -20 -18 -16 -14 -12 -10 Pin, INPUT POWER (dBm) Pin, INPUT POWER (dBm) Figure 24. Noise Figure versus Frequency Figure 25. Noise Figure versus Frequency 4.0 16 VD = 2.8 V Vgain = 0 V NF, NOISE FIGURE (dBm) NF, NOISE FIGURE (dBm) -22 Pin, INPUT POWER (dBm) 4.0 -12 -30 2.8 V -15 3.0 TA = 70C 25C 2.0 -25C 1.0 15 TA = 70C 25C -25C 10 VD = 2.8 V Vgain = 2.8 V 0 800 820 840 860 880 900 920 940 960 980 1000 f, FREQUENCY (MHz) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 8.0 800 820 840 860 880 900 920 940 960 980 1000 f, FREQUENCY (MHz) MRFIC0930 2.2-37 MRFIC0954 800 MHz CDMA Upmixer/Exciter The MRFIC0954 is an integrated upmixer and exciter amplifier designed specifically for dual-mode CDMA/AMPS digital cellular radios. The exciter amplifier incorporates a temperature compensated linear gain control. The design utilizes Motorola's RF BiCMOS1 process to yield superior performance in a cost effective monolithic device. * * * * * * 800 MHz DUAL-MODE CDMA/AMPS UPMIXER/EXCITER Designed for Dual-Mode Operation Total Supply Current CDMA Mode = 55 mA Typical Total Supply Current FM Mode = 35 mA Typical 30 dB Dynamic Range Gain Control on Exciter SEMICONDUCTOR TECHNICAL DATA Upmixer Output IP3 = 11 dBm Typical Exciter Output IP3 = 28 dBm Typical Supply Voltage Range = 2.7 to 3.6 V 20 Cascaded Adjacent Channel Power (Pout = 6.0 dBm) @ 885 kHz Offset = -60 dBc Typical @ 1.98 MHz Offset = -72 dBc Typical 1 (Scale 2:1) PLASTIC PACKAGE CASE 948M (TSSOP-20EP, Tape & Reel Only) PIN CONNECTIONS Simplified Block Diagram IF In+ 1 20 IF In- Enable1 2 LO In 3 19 VCC4 18 RF Out + FM/CDMA Select 4 17 RF Out - LO LO Buffer IF In + RF Out + IF In - RF Out - Exciter Out Exciter In N.C. 5 16 Gnd VCC3 Gnd 6 15 Gnd 7 14 Gnd VCC1 RF Vcntrl 8 13 Exciter In 9 12 VCC2 11 Enable2 Exciter Out 10 (Top View) Bias FM/CDMA Select Gain Control ORDERING INFORMATION RF Vcntrl This device contains 305 active transistors. MRFIC0954 2.2-38 Device Operating Temp Range Package MRFIC0954R2 TA = -40 to 85C TSSOP-20EP MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC0954 MAXIMUM RATINGS Rating Symbol Value Unit VCC 5.0 V IF Input IF In+, IF In- 10 dBm LO Input LO 10 dBm Operating Temperature TA -40 to 85 C Tstg -65 to 150 C Supply Voltage Storage Temperature NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Recommended Operating Conditions and Electrical Characteristics tables or Pin Descriptions section. 2. Meets Human Body Model (HBM) 50 V and Machine Model (MM) 40 V. This device is rated Moisture Sensitivity Level (MSL) 4. ESD data available upon request. RECOMMENDED OPERATING CONDITIONS Characteristic Symbol Min Typ Max Unit Supply Voltage VCC 2.7 - 3.6 V RF Frequency Range fRF 800 - 960 MHz IF Frequency Range fIF 70 - 250 MHz LO Frequency Range fLO 600 - 1200 MHz Vcntrl 0.1 - 1.7 V Gain Control Voltage Range ELECTRICAL CHARACTERISTICS (VCC = 2.7 V, PLO = -15 dBm @ 967 MHz, PIF = -21 dBm (differential) @ 130 MHz, VEnable = VTxEnable = 2.4 V, TA = 25C, Test Circuit in Figure 1, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit CASCADE PERFORMANCE (Filter included between RF Out and Exciter input. Filter has an insertion loss of 4.0 dB) For CDMA mode FM/CDMA Select = 2.7 V. For FM mode FM/CDMA Select = 0 V. Output Power CDMA Mode (Vcntrl = 1.7 V) FM Mode (PIF = -12 dBm (differential) ) CDMA Mode (Vcntrl = 1.3 V) Pout Dynamic Range (RFVcntrl = 0.1 to 1.7 V) DR Adjacent Channel Power (CDMA Mode, Pout = 6.0 dBm, PIF = -21 dBm (differential) ) @ 885 kHz Offset @ 1.98 MHz Offset ACPR Supply Current CDMA Mode, PIF = -21 dBm (differential), Pout = 6.0 dBm (set by Vcntrl) FM Mode, PIF = -12 dBm (differential), Pout = 11 dBm (set by Vcntrl) ICC dBm 6.0 11 3.0 10 14 7.0 - - - 25 38 - dB dBc - - -60 -72 -52 -62 - 55 70 - 35 50 GC - 7.0 - mA MIXER SECTION Conversion Gain Noise Figure Output Third Order Intercept Point dB NF - 15 - dB OIP3 - 11 - dBm GC - 28 - dB EXCITER SECTION Gain (No Attenuation) Noise Figure NF - 5.0 - dB AGC Dynamic Range DR 25 38 - dB OIP3 - 25 - dBm Output Third Order Intercept Point MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC0954 2.2-39 MRFIC0954 PIN FUNCTION DESCRIPTION Pin Function 1 IF In+ 2 Enable 1 (See Table 2) Description Voltage On (V) Mixer IF input pin. Input impedance is 500 . -24 dBm (Typ) Enable pin. A logic High (>2.4 V) enables entire chip and Low (<0.4 V) disables chip. 3 LO In 4 FM/CDMA Select 5 N.C. No Connection 6 VCC3 Supply Voltage. 7 Gnd 8 VCC1 9 RF AGC Control Voltage 10 Exciter Out 11 Enable 2 (See Table 2) 12 VCC2 13 Exciter In 14 15 Voltage Off (V) Mixer LO input pin. 2.4 to 3.6 0 to 0.4 -15 dBm (Typ) FM/CDMA select pin. Logic High (>2.4 V) selects CDMA mode for increased linearity and output power. Low (<0.4 V) selects FM mode for reduced current consumption. 2.7 to 3.6 Ground connection. - Supply Voltage 2.7 to 3.6 RF AGC control pin. A 30 dB dynamic range can be acheived by adjusting voltage from 0.1 V (low gain) to 1.7 V (high gain). 0.1 to 1.7 RF exciter amplifier output pin. - Tx Enable pin. A logic High (>2.4 V) enables Tx path and Low (<0.4 V) disables Tx path except LO Buffer. 2.4 to 3.6 Supply Voltage 2.7 to 3.6 RF exciter amplifier input pin. - Gnd Ground connection. - Gnd Ground connection. - 16 Gnd Ground connection. - 17 RF Out- Mixer RF output pin. 18 RF Out+ Mixer RF output pin. 19 VCC4 Supply Voltage 20 IF In- Mixer IF input pin. Input impedance is 500 . 0 to 0.4 2.7 to 3.6 -24 dBm (Typ) Table 1. Enable Truth Table MRFIC0954 2.2-40 Enable 1 Enable 2 Mode 0 0 Disabled 0 1 Not Applicable 1 0 Standby Mode: Disables mixer/exciter, except LO buffer 1 1 Tx Enabled MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC0954 Figure 1. Applications Circuit L7 IF In- C18 C17 V CC4 L1 L6 IF In+ C15 C16 C1 C2 20 1 Enable 2 LO 3 L2 19 Mixer NC C3 C4 VCC1 C5 C6 LO Buffer 15 7 14 8 13 9 L3 C13 16 5 6 RF Out 18 17 4 FM/CDMA VCC3 C14 Exciter RF AGC 10 L5 C12 12 R1 Exciter In 11 V CC2 RF Vcntrl C10 C11 C7 Exciter Out Tx EN L4 VCC Exc C8 C9 C1, C18 C2, C17 C3 , C5, C8, C11, C16 C4, C6, C9, C10, C12, C15 C7 C13 C14 1.0 nF 4.7 pF 10 nF 100 pF 4.3 pF 1.6 pF 1.3 pF L1, L7 L2 L3 , L4, L6 L5 220 nH 15 nH 6.8 nH 1.0 nH R1 100 NOTES: 1. IF ports matched to 50 for testing purposes. 2. L3 and C6 form part of RFAGC/Exciter interstage match. 3. L5 can be varied to change gain. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC0954 2.2-41 MRFIC0954 Figure 3. Gain versus Frequency (CDMA Mode) Figure 2. Gain versus Frequency (FM Mode) 26 33 25.5 31 -40C GAIN (dB) 25 GAIN (dB) TA = -40C TA = 25C 24.5 85C VCC = 2.7 V Vcntl = 1.7 V Pin = -21 dBm 23.5 23 824 829 834 839 844 25 824 849 829 834 839 844 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 4. Gain versus LO Power (FM Mode) Figure 5. Gain versus LO Power (CDMA Mode) 849 33 32 25C 25 GAIN (dB) 24 TA = 85C 23 21 -20 -18 -16 -14 30 28 -12 25 -20 -10 -16 -14 -12 PLO, LO POWER (dBm) Figure 6. LO Feedthrough versus Control Voltage (FM Mode) Figure 7. LO Feedthrough versus Control Voltage (CDMA Mode) -15 -20 LO FEEDTHROUGH (dBm) -10 TA = -40C 25C -25 -30 -35 -40 85C -45 VCC = 2.7 V PLO = -15 dBm fLO = 966 MHz -50 0.4 0.6 0.8 1.0 1.2 Vcntrl, CONTROL VOLTAGE (V) MRFIC0954 2.2-42 -18 PLO, LO POWER (dBm) -10 0.2 VCC = 2.7 V Vcntl = 1.7 V fLO = 966 MHz 85C 26 -15 0 25C 29 27 VCC = 2.7 V Vcntl = 1.7 V fLO = 966 MHz 22 TA = -40C 31 -40C -55 VCC = 2.7 V Vcntl = 1.7 V Pin = -21 dBm 27 26 GAIN (dB) 29 85C 24 LO FEEDTHROUGH (dBm) 25C 1.4 1.6 TA = -40C -20 25C -25 -30 -35 -40 85C VCC = 2.7 V PLO = -15 dBm fLO = 966 MHz -45 -50 1.8 -10 -55 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Vcntrl, CONTROL VOLTAGE (V) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC0954 Figure 9. Output Power versus Control Voltage (CDMA Mode) Figure 8. Output Power versus Control Voltage (FM Mode) 15 15 TA = -40C 10 Pout , OUTPUT POWER (dBm) Pout , OUTPUT POWER (dBm) 10 5.0 85C 0 25C -5.0 -10 -15 -20 VCC = 2.7 V Pin = -21 dBm fRF = 836 MHz -25 -30 -35 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 85C -5.0 25C -10 -15 -20 VCC = 2.7 V Pin = -21 dBm fRF = 1836 MHz -25 -35 1.8 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Vcntrl, CONTROL VOLTAGE (V) Vcntrl, CONTROL VOLTAGE (V) Figure 10. Adjacent Channel Power versus Control Voltage (CDMA Mode) Figure 11. Alternate Channel Power versus Control Voltage (CDMA Mode) 1.8 -65.5 VCC = 2.7 V Pin = -21 dBm fRF = 836 MHz -40 -45 ALTERNATE CHANNEL POWER @ 1.98 MHz OFFSET (dBc) ACPR, ADJACENT CHANNEL POWER @ 885 kHZ OFFSET (dBm) 0 -30 -35 TA = -40C -50 85C -55 25C -60 -65 -70 TA = -40C 5.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VCC = 2.7 V Pin = -21 dBm fRF = 836 MHz -66 -66.5 TA = -40C -67 -67.5 -68 85C 25C -68.5 -69 -69.5 Vcntrl, CONTROL VOLTAGE (V) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Vcntrl, CONTROL VOLTAGE (V) MRFIC0954 2.2-43 MRFIC0954 APPLICATIONS INFORMATION Design Philosophy The MRFIC0954 has three operating states, enable, standby, and disable. These states are controlled by the truth table shown in Table 2. The device is fully operational during the enable state and the bias level can be selected. A high bias current for CDMA or a lower bias current for Analog (or CDMA at lower powers) can be selected via the FM/CDMA pin. In the high current CDMA mode, the quiescent current is increased to maximize the linearity of the device. In the lower current bias, the quiescent current is optimized for efficiency in the Analog mode. This lower bias point is also useful in lower power CDMA operation. The standby mode can be used to reduce current consumption during Voice Activity Factoring. In the standby mode, the LO buffer remains on to prevent VCO pulling and the bandgap reference bias circuit remains on to assure rapid device turn on. Current consumption in standby mode is 10 mA typical. The disable mode is used to turn the MRFIC0954 completely off. Leakage current in this mode is only a few microamps. The mixer is a double-balanced "Gilbert-cell" design with a balanced LO buffer amplifier. The input and output of the mixer are differential. However, the linearity is high enough to tie one output to VCC and use the other as a single-ended output. Used this way it provides around 7.0 dB of gain and typically draws 20 mA quiescent current in CDMA mode and 16 mA in Analog Mode. An external filter is required between the mixer and RF AGC amplifier to reduce RX band noise. Figure 1 shows the applications circuit for the MRFIC0954. In this circuit, the IF ports of the mixer have been matched to 50 for testing purposes. In the actual application, the differential IF ports of the mixer would be impedance matched to an IF SAW filter. The differential impedance of the mixer IF ports is 1600 . The RF output of the mixer is configured as a single ended output. DC current to the open collector output of the mixer is provided by inductor, L6 (6.8 nH). Inductor L6 is also part of the matching circuit with C13 (1.6 pF), C14 (1.3 pF) and C15 (100 p). The RF AGC amplifier is a single-ended cascode design employing the standard "current steering" method of gain control. It's ground is brought out through pin number 15 so inductance can be added to degenerate the gain for a lower noise floor. With 2.0 to 3.0 nH of external inductance, the maximum gain is around 13 dB. It typically draws 9.0 mA quiescent current in CDMA mode and 3.0 mA in Analog mode. The RF Vcntrl signal is buffered with an on-chip OpAmp then preconditioned with temperature compensation and dB/V linearization before being applied to the RF AGC amplifier. Inductor L3 (6.8 nH) and capacitor C6 (100 pF) are for the interstage match between the RF AGC and the exciter amplifier. The exciter amplifier is a simple common emitter design. It is grounded directly to the exposed pad which results in 12 dB of gain. It typically draws 24 mA bias current in CDMA mode and 8.0 mA in Analog mode. Inductor L4 (6.8 nH), MRFIC0954 2.2-44 capacitor C7 (4.3 pF), and C9 (100 pF) provide the output matching. L4 also provides a DC current path for the open collector output. Noise Power Considerations In CDMA systems, the handset is required to dynamically adjust its output power to specific levels. This requires a dynamic range of as much as 90 dB from the transmitter. Another key performance specification in CDMA systems is the output noise power, both in band and out of band. Noise power specifications has caused the noise figure of the transmitter to become an important system consideration. The cascaded noise figure of the transmitter can be analyzed with the same equation used in receiver analysis. The only difference is the noise source is from the transmitter (modulator) instead of the atmosphere. Noise Source Gain = Noise Figure = NF cascaded G1 NF1 G2 NF2 + NF1 ) NF 2 G3 NF3 *1 G1 ) NF 3 *1 G 1G 2 This equation above shows that the cascaded noise figure is better if the gain is higher and the noise figure is lower for the stages close to the noise source. For this reason, it is advantageous to implement some of the gain control of a CDMA transmitter in the RF section. The MRFIC0954 integrates a RF AGC amplifier after the upmixer to improve the overall noise figure of the transmitter. If better noise figure from the mixer is required, the mixer RF output can be operated differentially with the addition of a balun. Operating the mixer differentially will provide some noise cancellation and reduce the noise figure by 5.0 dB. Shown below is a lumped element balun that is effective in the cellular transmit band of 824 to 849 MHz. 100 pF VCC 19 15 nH 2.0 pF RF Out 18 33 nH 17 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC0954 Table 2. Scattering Parameters for Exciter Amplifier (VDD = 2.7 V, TA = 25C, RF Vcntrl = 1.8 V, 50 System) AAAAA AAAAAAAA AAAAAAAA AAAAAAAAA AAAAAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAAAAA AAAAAAAA AAAAAAAAA AAAAAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA f S11 S21 S12 S22 (MHz) S11 6 S21 6 S12 6 S22 6 800 0.523 -31.46 18.463 -102.56 0.001 153.19 0.341 -26.37 810 0.522 -31.83 18.964 -107.12 0.001 152.15 0.360 -33.06 820 0.519 -31.84 19.412 -111.84 0.001 152.18 0.379 -39.48 830 0.515 -31.96 20.017 -121.57 0.001 143.30 0.413 -52.61 840 0.513 -31.90 20.214 -126.53 0.002 139.87 0.428 -58.96 850 0.512 -31.78 20.330 -131.59 0.001 140.14 0.445 -65.36 860 0.513 -31.62 20.228 -141.98 0.001 143.83 0.468 -77.72 870 0.510 -31.64 19.962 -147.12 0.002 140.02 0.476 -83.97 880 0.510 -31.45 19.593 -152.09 0.002 147.69 0.478 -89.94 890 0.514 -31.41 18.768 -161.40 0.002 139.58 0.486 -100.64 900 0.515 -31.50 18.161 -166.11 0.002 141.12 0.491 -105.67 910 0.514 -31.58 17.585 -170.50 0.002 124.24 0.489 -110.70 920 0.515 -31.83 16.353 -178.79 0.002 125.97 0.485 -119.67 930 0.517 -31.96 15.718 177.30 0.002 128.36 0.489 -124.16 940 0.518 -32.29 15.070 173.39 0.002 125.66 0.484 -128.24 950 0.517 -32.88 13.708 166.70 0.002 112.00 0.473 -135.30 960 0.518 -32.81 13.090 163.84 0.002 117.04 0.468 -138.41 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC0954 2.2-45 MRFIC0954 Table 3. Scattering Parameters for Upmixer (VDD = 2.7 V, TA = 25C, 50 System) AAAAA AAAAAAAAA AAAAAAAAA AA AAAAA AAAAAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AA AAAAA AAAAA AAAAA AAAAAAAAA AAAAAAAAA AAAAAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AA AAAAA AAAAA AAAAA f IF In+ IF In- f RF Out (Pin 17) (MHz) S11 6 S11 6 (MHz) S11 6 70 0.886 -5.66 0.885 -5.12 800 0.488 -60.15 80 0.883 -5.79 0.882 -5.29 810 0.487 -60.56 90 0.884 -6.15 0.881 -5.73 820 0.487 -61.04 100 0.879 -6.26 0.878 -5.74 830 0.488 -61.82 110 0.881 -6.74 0.881 -6.19 840 0.490 -62.20 120 0.877 -7.20 0.878 -6.43 850 0.487 -62.85 130 0.880 -7.23 0.879 -6.64 860 0.491 -63.72 140 0.876 -7.89 0.876 -7.20 870 0.492 -64.03 150 0.876 -8.11 0.875 -7.28 880 0.493 -64.38 160 0.878 -8.51 0.877 -7.57 890 0.497 -65.56 170 0.879 -8.84 0.879 -8.07 900 0.501 -65.98 180 0.877 -9.28 0.880 -8.26 910 0.503 -66.50 190 0.876 -9.81 0.878 -8.81 920 0.504 -68.66 200 0.876 -10.15 0.877 -9.21 930 0.504 -69.70 210 0.875 -10.52 0.876 -9.44 940 0.502 -69.91 220 0.877 -10.83 0.880 -9.78 950 0.503 -71.15 230 0.877 -11.58 0.877 -10.41 960 0.502 -70.74 240 0.878 -11.59 0.877 -10.41 AAAAA AAAAAAAA A AAAAA AAAAAAAA A AAAAA AAAAAAAA AAAAA AAAA AAAAA A AAAAA AAAA AAAAA A AAAAA AAAA AAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAA AAAA AAAAA A AAAA AAAAA AAAAA A AAAA AAAAA AAAAA 250 0.881 f -12.29 LO In 0.879 -10.85 f LO In f LO In (MHz) S11 6 (MHz) S11 6 (MHz) S11 6 600 0.820 -18.93 810 0.802 -24.40 1020 0.785 -30.28 610 0.819 -19.00 820 0.800 -24.55 1030 0.784 -30.09 620 0.817 -19.35 830 0.802 -24.75 1040 0.786 -30.63 630 0.815 -19.60 840 0.804 -25.22 1050 0.786 -30.91 640 0.820 -19.87 850 0.804 -25.13 1060 0.784 -31.10 650 0.814 -20.06 860 0.802 -25.86 1070 0.780 -31.60 660 0.813 -20.49 870 0.799 -26.14 1080 0.783 -31.85 670 0.816 -20.61 880 0.801 -26.36 1090 0.782 -31.99 680 0.815 -20.82 890 0.797 -26.72 1100 0.775 -32.54 MRFIC0954 2.2-46 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1808 1.9 GHz GaAs Low Noise Amplifier Designed primarily for use in wireless Personal Communication Systems (PCS) applications such as Digital European Cordless Telephone (DECT), Japan's Personal Handy System (PHS) and the emerging North American systems as a preamp for discrete or integrated downmixers. The MRFIC1808DM is a two-stage low noise amplifier in a low-cost Micro-8 package. The amplifier can be matched to optimize gain or noise figure with simple off-chip input matching. The design employs a novel stacked MESFET design which reuses bias current for the highest gain at minimal current. A CMOS compatible Rx Enable pin allows for very low standby current while the system is in transmit mode. * Usable Frequency Range = 1.7 to 2.1 GHz * * * * * * * * 1.9 GHz GaAs LOW NOISE AMPLIFIER SEMICONDUCTOR TECHNICAL DATA 18 dB Typ Gain 8 1.6 dB Typ Noise Figure Simple Off-chip Matching for Maximum Gain/Noise Figure Flexibility 1 (Scale 2:1) High Reverse Isolation = 32 dB (Typ) DM SUFFIX PLASTIC PACKAGE CASE 846A (Micro-8, Tape & Reel Only) Single Bias Supply = 2.7 to 4.5 V Low Standby Current = 8 A (Typ) Low Cost Surface Mount Plastic Package Device Marking = M1808 PIN CONNECTIONS VDD1 N.C. RF Out LNA CAP Simplified Block Diagram 1 8 2 7 3 6 4 5 Rx Enable Gnd RF In Gnd (Top View) RF Out RF In ORDERING INFORMATION Device This device contains 5 active transistors. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Operating Temp Range MRFIC1808DMR2 TA = -30 to 85C Package Micro-8 MRFIC1808 2.2-47 MRFIC1808 MAXIMUM RATINGS (TA = 25C, unless otherwise noted) Rating Symbol Value Unit Supply Voltage VDD 5.5 Vdc RF Input Power PRF 3.0 dBm Enable Voltage Rx Enable 5.5 Vdc Tstg -65 to 150 C TA -30 to 85 C Storage Temperature Range Operating Ambient Temperature NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Recommended Operating Conditions or Electrical Characteristics tables. 2. Meets Human Body Model (HBM) 500 V and Machine Model (MM) 200 V. 3. ESD data available upon request. RECOMMENDED OPERATING CONDITIONS Parameter Symbol Min Typ Max Unit RF Frequency fRF 1.7 - 2.1 GHz Supply Voltage VDD 2.7 - 4.5 Vdc Rx Enable Voltage, ON Rx Enable 2.7 - VDD Vdc Rx Enable Voltage, OFF Rx Enable 0 - 0.2 Vdc ELECTRICAL CHARACTERISTICS (VDD = 3.0 V, TA = 25C, RF = -30 dBm @ 1.9 GHz, Rx Enable = 3.0 V, unless otherwise noted. Tested in Circuit Shown in Figure 1) Characteristic Symbol Min Typ Max Unit RF Gain - 16 18 - dB SSB Noise Figure - - 1.6 - dB RF Output 3rd Order Intercept Point - - 13 - dBm Output 1 dB Gain Compression - -3.0 1.0 - dBm Reverse Isolation (s12) - - -34 - dB Input Return Loss - - -12 - dB Output Return Loss - - -15 - dB Supply Current, Rx Mode - - 5.0 7.5 mA Supply Current, Standby Mode (Rx Enable = 0 V) - - - 50 mA Figure 1. Applications Circuit Configuration VDD C4 1 8 2 7 3 6 Rx Enable L1 RF Out C3 RF In C2 C1 MRFIC1808 2.2-48 4 5 C1 C2 C3, C4 L1 1.4 pF 1.4 pF 22 pF 4.7 nH MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1808 TYPICAL CHARACTERISTICS Figure 2. Supply Current versus Voltage Figure 3. Output Power versus Input Power 6.0 6.2 4.0 Pout , OUTPUT POWER (dBm) IDD , SUPPLY CURRENT (mA) 6.15 6.1 6.05 6.0 5.95 f = 1.9 GHz TA = 25C Rx Enable = 3.0 V 5.9 5.85 3.0 3.5 0 25C & 85C -2.0 -4.0 -6.0 -8.0 f = 1.9 GHz VDD = 3.0 V Rx Enable = 3.0 V -10 -12 4.5 4.0 VDD, SUPPLY VOLTAGE (V) -14 -30 5.0 Figure 4. Output Power versus Input Power -25 -20 Pin, INPUT POWER (dBm) -15 -10 Figure 5. Gain versus Frequency 20 6.0 5.0 V 4.0 19 5.0 V 2.0 18 4.0 V 0 -2.0 GAIN (dB) Pout , OUTPUT POWER (dBm) TA = -30C 2.0 -4.0 VDD = 3.0 V -6.0 -8.0 4.0 V 17 16 VDD = 3.0 V 15 14 f = 1.9 GHz TA = 25C Rx Enable = 3.0 V -10 -12 -14 -30 -25 -20 Pin, INPUT POWER (dBm) -15 Pin = -30 dBm TA = 25C Rx Enable = 3.0 V 13 12 1.7 -10 Figure 6. Gain versus Frequency 1.8 1.9 2.0 f, FREQUENCY (GHz) 2.1 2.2 Figure 7. Noise Figure versus Frequency 3.0 20 TA = -30C 19 2.5 17 NF, NOISE FIGURE (dB) GAIN (dB) 18 25C 16 85C 15 14 Pin = -30 dBm VDD = 3.0 V Rx Enable = 3.0 V 13 12 1.7 1.8 1.9 2.0 2.1 2.0 TA = 85C 25C 1.5 -30C 1.0 VDD = 3.0 V Rx Enable = 3.0 V 2.2 0.5 1.7 f, FREQUENCY (GHz) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 1.8 1.9 2.0 2.1 2.2 f, FREQUENCY (GHz) MRFIC1808 2.2-49 MRFIC1808 TYPICAL CHARACTERISTICS Figure 8. Reverse Isolation versus Frequency Figure 9. Reverse Isolation versus Frequency -30 -30 VDD = 3.0 V -32 REVERSE ISOLATION (dB) REVERSE ISOLATION (dB) TA = -30C 25C -34 85C -36 -38 Pin = -30 dBm VDD = 3.0 V Rx Enable = 3.0 V -40 1.7 MRFIC1808 2.2-50 1.8 2.0 1.9 f, FREQUENCY (GHz) 2.1 2.2 4.0 V -32 -34 5.0 V -36 -38 -40 1.7 Pin = -30 dBm TA = 25C Rx Enable = 3.0 V 1.8 1.9 2.0 f, FREQUENCY (GHz) 2.1 2.2 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1808 Table 1. Scattering Parameters (VDD = 3.0 V, TA = 25C, Rx Enable = 3.0 V, 50 System) S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 1500 0.907 -42 2.91 153 0.012 87 0.793 -60 1530 0.913 -43 3.11 148 0.012 85 0.765 -62 1560 0.920 -44 3.32 144 0.013 83 0.735 -64 1590 0.927 -45 3.55 139 0.013 80 0.701 -66 1620 0.935 -46 3.78 135 0.013 76 0.665 -67 1650 0.943 -47 4.02 130 0.013 73 0.627 -69 1680 0.951 -48 4.26 125 0.013 70 0.586 -70 1710 0.959 -49 4.49 119 0.012 67 0.544 -70 1740 0.967 -50 4.72 114 0.012 63 0.500 -70 1770 0.975 -52 4.94 109 0.012 59 0.458 -70 1800 0.982 -53 5.17 104 0.011 56 0.418 -68 1830 0.988 -55 5.38 98 0.011 52 0.382 -65 1860 0.993 -56 5.58 93 0.011 48 0.351 -60 1890 0.997 -58 5.76 87 0.010 44 0.329 -54 1920 0.999 -59 5.92 82 0.009 40 0.317 -48 1950 1.002 -61 6.07 76 0.008 35 0.317 -40 1980 1.004 -62 6.19 71 0.008 30 0.327 -34 2010 1.004 -64 6.29 65 0.007 25 0.346 -28 2040 1.003 -65 6.37 60 0.006 19 0.371 -24 2070 1.002 -67 6.43 55 0.005 11 0.401 -21 2100 0.999 -68 6.50 50 0.004 2 0.433 -20 2130 0.996 -70 6.55 45 0.004 -10 0.467 -19 2160 0.994 -71 6.61 40 0.003 -29 0.499 -19 2190 0.991 -73 6.67 35 0.003 -52 0.530 -19 2220 0.989 -74 6.70 31 0.003 -80 0.560 -20 2250 0.984 -76 6.70 26 0.003 -100 0.589 -21 2280 0.981 -77 6.66 21 0.004 -113 0.615 -22 2310 0.975 -79 6.59 16 0.005 -122 0.639 -23 2340 0.968 -80 6.51 13 0.006 -130 0.661 -25 2370 0.960 -82 6.48 9 0.007 -135 0.681 -26 2400 0.953 -83 6.47 5 0.008 -140 0.698 -28 2430 0.944 -84 6.48 2 0.009 -145 0.714 -30 2460 0.937 -86 6.50 -2 0.011 -149 0.727 -31 2490 0.929 -87 6.52 -7 0.012 -154 0.739 -33 2520 0.922 -88 6.49 -11 0.013 -158 0.750 -34 2550 0.915 -90 6.43 -15 0.014 -161 0.758 -36 2580 0.908 -91 6.33 -19 0.015 -163 0.766 -38 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1808 2.2-51 MRFIC1808 Table 2. Scattering Parameters (VDD = 4.0 V, TA = 25C, Rx Enable = 3.0 V, 50 System) S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 1500 0.893 -42 3.20 151 0.012 87 0.797 -60 1530 0.899 -43 3.42 147 0.012 85 0.770 -62 1560 0.906 -44 3.65 143 0.012 82 0.740 -64 1590 0.914 -45 3.90 138 0.012 80 0.707 -65 1620 0.921 -46 4.15 134 0.013 77 0.671 -67 1650 0.929 -47 4.41 129 0.013 73 0.633 -68 1680 0.936 -48 4.67 124 0.013 70 0.593 -70 1710 0.945 -49 4.93 119 0.012 67 0.551 -70 1740 0.953 -50 5.18 113 0.012 63 0.507 -71 1770 0.960 -52 5.43 108 0.012 60 0.465 -70 1800 0.967 -53 5.66 103 0.011 57 0.424 -68 1830 0.973 -55 5.89 97 0.011 53 0.387 -66 1860 0.979 -56 6.11 92 0.011 50 0.355 -61 1890 0.982 -58 6.32 87 0.010 46 0.330 -56 1920 0.985 -59 6.51 81 0.009 43 0.317 -49 1950 0.987 -61 6.68 75 0.008 39 0.314 -42 1980 0.988 -62 6.81 70 0.008 32 0.322 -35 2010 0.989 -64 6.92 65 0.007 26 0.339 -29 2040 0.988 -65 7.02 60 0.006 20 0.364 -25 2070 0.986 -67 7.09 54 0.005 13 0.394 -22 2100 0.984 -68 7.17 49 0.005 4 0.425 -20 2130 0.980 -70 7.23 44 0.004 -7 0.459 -19 2160 0.978 -71 7.30 40 0.003 -21 0.491 -18 2190 0.975 -73 7.35 35 0.003 -39 0.524 -19 2220 0.972 -74 7.39 30 0.002 -69 0.554 -19 2250 0.968 -76 7.38 25 0.003 -93 0.584 -20 2280 0.964 -77 7.34 20 0.004 -109 0.611 -21 2310 0.958 -79 7.26 16 0.004 -118 0.635 -23 2340 0.950 -80 7.18 12 0.005 -126 0.658 -24 2370 0.942 -82 7.14 8 0.007 -133 0.678 -26 2400 0.934 -83 7.14 4 0.008 -138 0.695 -28 2430 0.927 -84 7.15 1 0.009 -145 0.712 -29 2460 0.920 -85 7.16 -3 0.010 -150 0.726 -31 2490 0.912 -87 7.17 -8 0.011 -154 0.738 -33 2520 0.905 -88 7.14 -12 0.012 -158 0.749 -34 2550 0.897 -89 7.07 -16 0.013 -161 0.758 -36 2580 0.891 -91 6.95 -20 0.014 -163 0.766 -38 MRFIC1808 2.2-52 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1808 Table 3. Scattering Parameters (VDD = 5.0 V, TA = 25C, Rx Enable = 3.0 V, 50 System) S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 1500 0.876 -42 3.50 150 0.012 87 0.799 -59 1530 0.883 -43 3.73 146 0.012 85 0.773 -61 1560 0.891 -44 3.98 141 0.012 83 0.744 -63 1590 0.898 -45 4.25 137 0.012 80 0.712 -65 1620 0.906 -46 4.52 132 0.012 77 0.677 -67 1650 0.914 -47 4.80 127 0.012 74 0.640 -68 1680 0.921 -48 5.08 122 0.012 71 0.600 -69 1710 0.928 -49 5.36 117 0.012 67 0.559 -70 1740 0.936 -51 5.63 112 0.012 64 0.517 -70 1770 0.944 -52 5.90 107 0.012 60 0.475 -70 1800 0.950 -53 6.16 102 0.011 57 0.435 -69 1830 0.956 -55 6.41 96 0.011 54 0.397 -66 1860 0.961 -56 6.66 91 0.010 50 0.365 -62 1890 0.965 -58 6.89 85 0.010 47 0.339 -57 1920 0.967 -59 7.10 80 0.009 43 0.323 -51 1950 0.968 -61 7.29 74 0.009 39 0.318 -44 1980 0.969 -62 7.44 69 0.008 35 0.323 -37 2010 0.970 -64 7.56 64 0.007 29 0.338 -31 2040 0.969 -66 7.66 58 0.006 24 0.361 -26 2070 0.966 -67 7.75 53 0.006 18 0.389 -23 2100 0.963 -69 7.84 48 0.005 10 0.420 -21 2130 0.960 -70 7.91 43 0.004 0 0.453 -19 2160 0.957 -72 7.98 38 0.003 -15 0.485 -19 2190 0.954 -73 8.04 34 0.003 -34 0.517 -19 2220 0.951 -75 8.08 29 0.002 -59 0.547 -20 2250 0.946 -76 8.07 24 0.003 -83 0.576 -21 2280 0.942 -78 8.02 19 0.003 -104 0.603 -22 2310 0.936 -79 7.93 14 0.004 -116 0.629 -23 2340 0.928 -81 7.84 10 0.005 -125 0.652 -24 2370 0.920 -82 7.80 7 0.006 -132 0.672 -26 2400 0.912 -83 7.79 3 0.007 -138 0.690 -28 2430 0.904 -84 7.79 -1 0.008 -143 0.707 -29 2460 0.896 -86 7.81 -5 0.009 -148 0.720 -31 2490 0.889 -87 7.81 -9 0.010 -152 0.733 -33 2520 0.882 -88 7.78 -13 0.011 -155 0.744 -34 2550 0.874 -89 7.69 -17 0.012 -158 0.754 -36 2580 0.869 -91 7.56 -21 0.013 -161 0.762 -38 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1808 2.2-53 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The MRFIC Line MRFIC1813 1.9 GHz GaAs Upconverter Designed primarily for use in wireless Personal Communication Systems (PCS) applications such as Digital European Cordless Telephone (DECT), Japan's Personal Handy System (PHS) and the emerging North American systems. The MRFIC1813 is also applicable to 2.4 GHz ISM equipment. The device combines a balanced upmixer and a transmit exciter amplifier in a low-cost TSSOP-16 package. Minimal off-chip matching is required while allowing for maximum flexibility and efficiency. The mixer is optimized for low-side injection and provides more than 12 dB of conversion gain with over 0 dBm output at 1 dB gain compression. Image filtering is implemented off-chip to allow maximum flexibility. A CMOS compatible ENABLE pin allows standby operation where the current drain is less than 250 mA. Together with other devices from the MRFIC180X or the MRFIC240X series, this GaAs IC family offers the complete transmit and receive functions, less LO and filters, needed for a typical 1.8 GHz cordless telephone or 2.4 GHz ISM band equipment. * Usable Frequency Range = 1.7 to 2.5 GHz * 15 dB Typ IF to RF Conversion Gain * 3 dBm Power Output Typ, 0 dBm Minimum at 1 dB Gain Compression * Simple Off-chip Matching for Maximum Flexibility * Low Power Consumption = 75 mW (Typ) * Single Bias Supply = 2.7 to 4.5 Volts * Low LO Power Requirement = - 5 dBm (Typ) * Low Cost Surface Mount Plastic Package * Order MRFIC1813R2 for Tape and Reel. R2 Suffix = 2,500 Units per 16 mm, 13 inch Reel. * Device Marking = M1813 1.9 GHz UPMIXER AND EXCITER AMPLIFIER CASE 948C-03 (TSSOP-16) VDD1 1 16 TX ENABLE N/C 2 15 N/C N/C 3 14 IF IN GND 4 13 GND LO IN 5 12 VDD3 GND 6 11 GND RF OUT 7 10 N/C VDD2 8 9 N/C MIXER EXCITER Pin Connections and Functional Block Diagram REV 2 MRFIC1813 2.2-54 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MAXIMUM RATINGS (TA = 25C unless otherwise noted) Ratings Symbol Limit Unit Supply Voltage VDD1, VDD2, VDD3 5.5 Vdc IF Input Power PIF 3 dBm LO Input Power PLO 3 dBm Enable Voltage TX ENABLE 5.5 Vdc Tstg - 65 to +150 C TA - 30 to + 85 C Symbol Value Unit RF Output Frequency fRF 1.7 to 2.5 GHz LO Input Frequency fLO 1.5 to 2.4 GHz IF Input Frequency fIF 70 to 350 MHz Storage Temperature Range Operating Ambient Temperature RECOMMENDED OPERATING RANGES Parameter Supply Voltage VDD 2.7 to 4.5 Vdc TX Enable Voltage, ON TX ENABLE 2.7 to VDD Vdc TX Enable Voltage, OFF TX ENABLE 0 to 0.2 Vdc ELECTRICAL CHARACTERISTICS (VDD1,2,3, TX ENABLE= 3 V, TA = 25C, fLO = 1.65 GHz @ - 5 dBm, fIF = 250 MHz @ -15 dBm) Characteristic IF to RF Small Signal Conversion Gain (PRF = -35 dBm) Min Typ Max Unit 12 15 -- dB RF Output 1 dB Gain Compression 0 3 -- dBm RF Output 3rd Order Intercept -- 11 -- dBm LO Feedthrough to RF Port -- -15 -10 dBm Noise Figure -- 11 -- dB Lower Sideband Output Power at RF Port -- -10 -6 dBm Supply Current TX Mode -- 25 35 mA Supply Current Standby Mode (TX ENABLE = 0 V, LO Off) -- 100 250 mA TX Enable Current -- 3 -- mA VDD1 C2 C1 LO IN 1 16 2 15 3 14 4 13 5 12 6 RF OUT MIXER 8 C3 R1 L1 C5 11 IF IN VDD3 T2 C4 C6 10 7 VDD2 TX ENABLE EXCITER 9 T1 C1, C2, C3, C4 15 pF C6 1 F R1 300 T1, T2 MICROSTRIP, Z0 = 73 , = 29 @ 1.9 GHz BOARD MATERIAL - GLASS/EPOXY, r = 4.45, DIELECTRIC THICKNESS = 0.018 INCH IF Frequency 110 MHz 250 MHz 350 MHz L1 180 nH 68 nH 39 nH C5 12 pF 5.6 pF 3.9 pF Figure 1. Applications Circuit Configuration MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1813 2.2-55 18 18 VDD = 3 Vdc 16 15 G C , CONVERSION GAIN (dB) G C , CONVERSION GAIN (dB) 17 4 & 4.5 Vdc 14 13 12 fRF = 1.9 GHz fIF = 250 MHz PIF = -35 dBm TA = 25C 11 10 25C 16 85C 14 12 TA = -35C 10 fRF = 1.9 GHz fIF = 250 MHz PIF = -35 dBm 8.0 9.0 8.0 -10 -8.0 -6.0 -4.0 -2.0 6.0 -10 0 -2.0 0 PLO, LO INPUT POWER (dBm) Figure 2. Conversion Gain versus LO Power Figure 3. Conversion Gain versus LO Power 16 15 18 250 MHz G C , CONVERSION GAIN (dB) G C , CONVERSION GAIN (dB) -4.0 PLO, LO INPUT POWER (dBm) 20 16 350 MHz IF = 110 MHz 14 12 fRF = 1.9 GHz PIF = -35 dBm VDD = 3 Vdc TA = 25C 10 8.0 6.0 -10 14 4 Vdc VDD = 3 Vdc 13 12 4.5 Vdc 11 10 9.0 8.0 PRF = -35 dBm fIF = 250 MHz PLO = -5 dBm TA = 25C 7.0 -8.0 -6.0 -4.0 -2.0 0 1700 1800 1900 2000 2100 2200 2300 2400 PLO, LO POWER (dBm) fRF, RF FREQUENCY (MHz) Figure 4. Conversion Gain versus LO Power Figure 5. Conversion Gain versus RF Frequency IF = 110 MHz G C , CONVERSION GAIN (dB) 15 14 25C TA = -35C 13 12 85C 11 10 7.0 fIF = 250 MHz PIF = -35 dBm PLO = -5 dBm VDD = 3 Vdc 6.0 1700 1800 9.0 8.0 2500 18 16 G C , CONVERSION GAIN (dB) -6.0 -8.0 16 14 250 MHz 12 10 PIF = -35 dBm PLO = -5 dBm TA = 25C 350 MHz 8.0 6.0 1900 2000 2100 2200 2300 2400 2500 1700 1800 1900 2000 2100 2200 2300 2400 fRF, RF FREQUENCY (MHz) fRF, RF FREQUENCY (GHz) Figure 6. Conversion Gain versus RF Frequency Figure 7. Conversion Gain versus RF Frequency MRFIC1813 2.2-56 2500 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 10 10 PRF , RF OUTPUT POWER (dBm) P RF , RF OUTPUT POWER (dBm) 4 & 4.5 Vdc 5.0 VDD = 3 Vdc 0 -5.0 -10 fRF = 1.9 GHz fIF = 250 MHz PLO = -5 dBm TA = 25C -15 -20 -35 -30 -25 -20 -15 -10 -5.0 -5.0 TA = -35C -10 25 & 85C fRF = 1.9 GHz fIF = 250 MHz PLO = -5 dBm VDD = 3 Vdc -15 -20 -30 -25 -20 -15 -10 -5.0 PIF, IF INPUT POWER (dBm) PIF, IF INPUT POWER (dBm) Figure 8. RF Output versus Input Power Figure 9. RF Output Power versus IF Input Power 0 5.0 POUT, RF OUTPUT POWER (dBm) 5.0 P RF, OUTPUT POWER (dBm) 0 -25 -35 0 10 0 -5.0 IF = 110 MHz -10 250 & 350 MHz fRF = 1.9 GHz PLO = -5 dBm VDD = 3 Vdc TA = 25C -15 -20 -25 -35 fIF = 110 MHz 0 -5.0 350 MHz -10 250 MHz fRF = 2.45 GHz PLO = -5 dBm VDD = 3 Vdc TA = 25C -15 -20 -25 -30 -25 -20 -15 -10 -5.0 0 -30 -25 -20 -15 -10 -5.0 PIF, IF INPUT POWER (dBm) PIF, IF INPUT POWER (dBm) Figure 10. RF Output versus IF Input Power Figure 11. Output Power versus IF Input Power 29 0 26.0 28 25.5 4.5 Vdc 27 26 I DD , SUPPLY CURRENT (mA) I DD, SUPPLY CURRENT (mA) 5.0 4 Vdc 25 24 VDD = 3 Vdc 23 fRF = 1.9 GHz fIF = 250 MHz PLO = -5 dBm TA = 25C 22 21 20 -35 -30 -25 25.0 -35C 24.5 24.0 fRF = 1.9 GHz fIF = 250 MHz PLO = -5 dBm VDD = 3 Vdc 23.5 23.0 85C TA = 25C 22.5 -20 -15 -10 -5.0 0 -35 -30 -25 -20 -15 -10 -5.0 PIF, IF INPUT POWER (dBm) PIF, IF INPUT POWER (dBm) Figure 12. Supply Current versus IF Input Power Figure 13. Supply Current versus IF Input Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 0 MRFIC1813 2.2-57 0 24.0 -5.0 23.5 LO-RF FEEDTHROUGH (dBm) I DD , SUPPLY CURRENT (mA) 24.5 250 MHz 23.0 IF = 110 MHz 350 MHz 22.5 fRF = 1.9 GHz PLO = -5 dBm VDD = 3 Vdc TA = 25C 22.0 21.5 21.0 -35 IF = 110 MHz -10 250 MHz -15 PLO = -5 dBm VDD = 3 Vdc TA = 25C -20 -25 350 MHz -30 -30 -25 -20 -15 -10 -5.0 0 1300 1400 1500 1600 1700 1800 1900 2000 PIF, IF INPUT POWER (dBm) FLO, LO FREQUENCY (MHz) Figure 14. Supply Current versus IF Input Power Figure 15. LO to RF Feedthrough versus LO Frequency 2100 25 0 -4.0 -6.0 I DD , SUPPLY CURRENT (mA) P LSB, LSB POWER (dBm) -2.0 4 & 4.5 Vdc -8.0 -10 -12 -14 fIF = 250 MHz PIF = -15 dBm PLO = -5 dBm TA = 25C VDD = 3 Vdc -16 -18 -20 1700 1800 20 15 10 VDD = 3 Vdc TA = 25C 5.0 0 1900 2000 2100 2200 2300 2400 2500 0 0.5 1.0 1.5 2.0 2.5 fRF, RF FREQUENCY (MHz) TX EN (VOLTS) Figure 16. Lower Side Band Power versus RF Frequency Figure 17. Supply Current versus Transmit Enable Voltage MRFIC1813 2.2-58 3.0 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA IF Input f RF Output (1) LO Input (MHz) R jX 70 8.3 -452.4 100 7.3 -318.5 150 7.1 -211.3 200 6.6 -156.4 250 6.5 -123.1 300 6.1 -100.7 350 5.7 -84.2 R jX R jX 30.4 33.6 16.9 1100 62.5 3.1 1200 58.1 4.3 1300 53.7 4.7 1400 50.2 4.2 1500 47.3 3.9 1600 44.4 3.2 1700 42.0 1.6 1800 40.6 0.5 42.6 1900 39.6 -0.7 49.1 2.3 2000 38.7 -2.2 40.6 14.2 2100 38.2 -3.6 33.8 17.7 2200 38.4 -5.1 33.3 15.7 2300 38.9 -6.5 32.9 13.7 2400 39.5 -7.8 29.6 13.2 27.4 11.9 2500 (1) Includes T1 shown in Figure 1. Table 1. Port Impedances versus Frequency (VD1, VD2, VD3, TX EN = 3 Vdc) APPLICATIONS INFORMATION DESIGN CONSIDERATIONS The MRFIC1813 combines a single-balanced MESFET mixer with an exciter amplifier. It is usable for transmit frequencies from 1.7 to 2.5 GHz and IF frequencies from 70 to 350 MHz. The design is optimized for low-side local oscillator injection in hetrodyne transmit applications. Minimal off-chip matching is required while allowing for flexibility and performance optimization. An active balun is employed at the IF port which gives good balance down to at least 70 MHz. A passive splitter is used at the LO input to complete the single-balanced configuration. conversion gain is reduced to about 8 dB. Microstrip inductors T1 and T2 combine with inductance internal to the device to form RF chokes. Some tuning of the RF output can be achieved with T1. As with all RF devices, circuit layout is important. Controlled impedance lines should be used for all RF and IF interconnects. As shown in Figure 1, power supply by-passing should be used to avoid device instability. Ground vias should be included near all ground connections indicated in the schematic. Off-chip components should be mounted as close to the IC leads as possible. CIRCUIT CONSIDERATIONS Figure 1 shows the application circuit used to gather the data presented in the characterization curves. As shown in Table 1, the IF port impedance is very high. Three hundred ohms was chosen for R1 to shunt the IF port as a compromise of gain and bandwidth. A 50 resistor can be used and L1 and C5 eliminated to provide a broadband match. The EVALUATION BOARDS Evaluation boards are available for RF Monolithic Integrated Circuits by adding a "TF" to the device type. For a complete list of currently available boards and one in development for newly introduced products, please contact your local Motorola Distributor or Sales Office. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1813 2.2-59 MRFIC1819 3.6 V 18OO MHz GaAs Integrated Power Amplifier The MRFIC1819 is a single supply, RF power amplifier designed for the 1W DCS1800/PCS1900 handheld radio. The negative power supply is generated inside the chip using RF rectification, which avoids any spurious signal. A built in priority switch is provided to prevent Drain Voltage being applied on the RF lineup if not properly biased by the Negative Voltage. The device is packaged in the TSSOP-16EP package, with exposed backside pad, which allows excellent electrical and thermal performance through a solderable contact. * Target 3.6 V Characteristics: RF Input Power: 6.0 dBm RF Output Power: 33 dBm Typical Efficiency: 41% Typical * Single Positive Supply Solution * * * INTEGRATED RF POWER AMPLIFIER DCS1800/PCS1900 SEMICONDUCTOR TECHNICAL DATA 16 Negative Voltage Generator 1 Positive Step-Up Voltage Generator VSS Check Switch for Gate-Drain Priority PLASTIC PACKAGE CASE 948L (TSSOP-16EP, Tape and Reel Only) PIN CONNECTIONS VP 1 16 VDB VD3 2 15 VD0 RFout 3 14 InBuf RFout 4 13 RFin RFout 5 12 VD1 Bias3 6 11 VD2 Bias2 7 10 VSC Bias1 8 9 VSS Simplified Block Diagram VD1 VD2 VD3 RF In RF Out Bias1 Bias2 Bias3 VSS VP Negative Voltage Generator In Buf (Top View) VSC ORDERING INFORMATION VD0 VDB This device contains 9 active transistors. MRFIC1819 2.2-60 Device Operating Temp Range Package MRFIC1819R2 TA = -40 to 85C TSSOP-16EP MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1819 MAXIMUM RATINGS Symbol Value Unit Supply Voltage Rating VD1, 2, 3 6.0 V RF Input Power Pin 12 dBm Pout 36 dBm RF Output Power NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Recommended Operating Contitions or Electrical Characteristics tables. 2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) 250 V and Machine Model (MM) 60 V. This device is rated Moisture Sensitivity Level (MSL) 4. Additional ESD data available upon request. RECOMMENDED OPERATING CONDITIONS Characteristic Symbol Min Typ Max Unit VD0, VDB, VD1, 2, 3 3.0 - 5.0 Vdc Input Power Pin 5.0 - 10 dBm Input Frequency fRF 1700 - 1900 MHz Operating Case Temperature Range TC -40 - 85 C Storage Temperature Range Tstg -55 - 150 C Supply Voltage ELECTRICAL CHARACTERISTICS (VD0 = VDB = 3.6 V, VD1, 2, 3 = 3.6 V, Pin = 6.0 dBm, Peak measurement at 12.5% duty cycle, 4.6 ms Period, TA = 25C, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Frequency Range BW 1710 - 1785 MHz Output Power Pout 32 33 - dBm Power Added Efficiency PAE 35 41 - % Output Power (Tuned for PCS Band 1850 to 1910 MHz) Pout - 33 - dBm Power Added Efficiency (Tuned for PCS Band 1850 to 1910 MHz) PAE - 41 - % Output Power at low voltage (VD0 = VDB = 3.0 V, VD1, 2, 3 = 3.0 V) Pout 30.5 31 - dBm - - -45 -35 -40 -30 Harmonic Output 2fo 3fo - Input Return Loss |S11| - 12 - dB Output Power Isolation (Pin = 10 dBm, VD0 = VDB = 3.0 V, VD1, 2&3 = 0 V) Poff - -30 - dBm - -90 - dBm Vss -4.85 - - V Negative Voltage Setting Time (Pin = 6.0 dBm, VD0 = VDB stepped from 0 to 3.0 V) Ts - 0.7 - s Positive Voltage (Pin = 6.0 dBm,VD0 = VDB = 3.0 V) VP 5.7 6.6 - V Pspur - - -60 dBc Noise Power (In 100 kHz, 1805 to 1880 MHz) Negative Voltage (Pin = 6.0 dBm, VD0 = VDB = 3.0 V) Stability-Spurious Output (Pout = 0 to 33 dBm, Load VSWR 6:1 all phase angles, source VSWR = 3:1, at any phase angle, Adjust VD1, 2&3 for specified power) Load Mismatch Stress (Pout = 3 to 33 dBm, Load VSWR = 10:1 all phase angles, 5 seconds, Adjust VD1, 2&3 for specified power) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA dBc No Degradation in Output Power Before & After Test MRFIC1819 2.2-61 MRFIC1819 Table 1. Optimum Loads Derived from Circuit Characterization Zin OHMS f MHz R ZOL* OHMS jX R jX 1710 -66.87 14.51 5.88 3.30 1720 -67.40 14.67 5.86 3.20 1730 -68.07 14.82 5.79 3.10 1740 -68.73 15.08 5.74 2.93 1750 -69.29 15.30 5.67 2.75 1760 -69.80 15.55 5.59 2.58 1770 -70.30 15.80 5.53 2.46 1780 -70.89 16.00 5.44 2.28 1790 -71.20 16.16 5.42 2.25 Zin represents the input impedance of the device. ZOL* represents the conjugate of the optimum output load to present to the device. Figure 1. Reference Circuit VSS VDB VP VD1, 2 and 3 VST R1 R4 D1 R3 C1 C5 C2 C4 T3 50 In L1 9 8 N.C. 10 7 T1 T2 T8 11 6 12 5 R5 C12 C15 C16 R2 C3 C6 Gnd T4 13 MRFIC1819 TSSOP16EP Note: Use high Q cap for C9 for best PAE/Pout C10 C9 C11 4 14 3 15 2 16 1 T7 T6 T5 50 Out C8 C7 L3 L2 C14 C1,C2 C3,C14 C4,C6,C8,C11, C15,C16 C5 C7 C9 C10 C12 C13 R1,R2 R3 MRFIC1819 2.2-62 C13 47 nF 330 pF 22 pF 10 nF 2.7 pF 3.9 pF AVX Accu-F 1.0 pF 0.8 pF 47 pF 15 k 7.5 k R4 R5 L1 L2 L3 D1 T1, T2 T3 T4 T5 T6,T7 T8 1.0 k 680 1.8 nH 33 nH 2.7 nH Zener 5.1 V MMSZ4689T1 60 Microstrip Line, L = 3.0 mm 50 Microstrip Line, L = 4.5 mm 80 Microstrip Line, L = 4.0 mm 50 Microstrip Line, L = 17 mm 30 Microstrip Line, L = 1.0 mm 50 Microstrip Line, L = 2.5 mm MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1819 Figure 2. 3.6 V DCS Application Circuit 3.0 V 0V TxEn BS 12 8 Vbat CE 3.0 V DCS 0V GSM 7 Vramp 11 1 MC33170 Pin 1 MTSF3N02HD 5 A B 6 C5 10 F 2.0 V 0V 3 U1 G R11 10 k R2 10 k A1 (Micro 8) S Pin 1 D R5 0 C39 0.1 F R1 10 k C1 100 nF VD1 VD2 2 4 2 VSS VDB VP 5 6 3 4 10 VD3 B 10 Gnd 8 9 R13A 15 k C16 22 pF R13B 15 k C19 330 pF C17 47 nF C21 10 nF C18 47 nF C6 22 pF C20 22 pF 9 8 10 7 Zc = 60 L = 3.0 mm 11 Zc = 60 L = 3.0 mm 12 Zc = 50 L = 2.5 mm 13 Zc = 50 50 In L1 1.8 nH L = 4.5 mm R13C 7.5 k R15 680 C15 22 pF C12 0.8 pF Zc = 80 L = 4.0 mm Note: Use high Q cap for C9 for best PAE/Pout 6 MRFIC1819 TSSOP16EP C10 1.0 pF C11 22 pF 4 14 3 15 2 16 1 L3 2.7 nH C9 3.9 pF 5 Zc = 30 L = 1.0 mm Zc = 30 L = 1.0 mm Zc = 50 L = 17 mm C7 2.7 pF 50 Out C8 22 pF L2 33 nH C14 330 pF C13 47 pF MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1819 2.2-63 MRFIC1819 Figure 3. 3.6 V GSM & DCS IPA Dual-Band Application Circuit with Companion Chip & NMOS Switch 3.0 V 0V TxEn BS 12 Vbat CE 3.0 V DCS 8 7 Vramp 11 1 2.0 V 0V GSM 0V MC33170 Pin 1 MTSF3N02HD 5 G A C5 10 F B 3 U1 A1 (Micro 8) R11 10 k R2 10 k 6 S D Pin 1 R5 0 C39 0.1 F R1 10 k C1 100 nF 2 VD1 VD2 VSS VDB VP 2 4 5 6 3 4 10 VD3 A 10 Gnd 8 9 R13B 12 k C29 330 pF C7 10 nF C6 56 pF R13A 6.8 k Zc = 60 L = 3.0 mm C4 56 pF Zc = 60 L = 11 mm 50 In GSM R13C 12 k C8 10 nF 8 10 7 11 6 12 13 Zc = 50 C40 8.2 pF 9 L2 12 nH C14 12 pF C15 6.8 pF C16 56 pF 5 MRFIC0919 50 Out GSM 4 TSSOP16EP 14 3 15 2 16 1 Zc = 50 Zc = 30 L = 7.0 mm Zc = 50 L = 17 mm C17 56 pF C8 10 nF C12 4.7 pF L4 6.8 nH C11 56 pF C25 10 nF B 8 C34 47 pF C35 22 pF R13A 15 k C41 47 nF C36 22 pF 8 10 7 Zc = 60 L = 3.0 mm 11 Zc = 60 L = 3.0 mm 12 Zc = 50 50 ID DCS L10 1.8 nH Zc = 50 L = 2.5 mm R10 680 C37 13 MRFIC1819 C9 22 pF 2 16 1 MRFIC1819 2.2-64 Zc = 30 L = 1.0 mm 50 Out DCS Zc = 30 L = 1.0 mm Zc = 50 L = 17 mm C22 2.7 pF L3 2.7 nH C10 330 pF C32 1.0 pF 4 TSSOP16EP 15 L8 33 nH C31 3.9 pF 5 3 Zc = 80 L = 4.0 mm R13C 7.5 k 6 0.8 pF14 L = 4.5 mm C24 22 pF C42 22 pF R13B 15 k 9 C33 22 pF C30 10 nF C26 47 pF MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1819 Figure 4. Output Power versus Frequency Figure 5. Power Added Efficiency versus Frequency 35 PAE, POWER ADDED EFFICIENCY (%) 43 Pout , OUTPUT POWER (dBm) VD = 4.2 V 34 3.6 V 33 3.0 V 32 31 TA = 25C Pin = 6.0 dBm 30 1710 1720 1740 1755 1770 VD = 3.6, 4.2 V 42 3.0 V 41 40 39 TA = 25C Pin = 6.0 dBm 38 37 1710 1785 1720 f, FREQUENCY (MHz) 1740 1755 1770 1785 f, FREQUENCY (MHz) Figure 6. Output Power versus Frequency Figure 7. Output Power versus Frequency 35 34 Pout , OUTPUT POWER (dBm) Pout , OUTPUT POWER (dBm) TA = -40C 34 TA = -40C 33 25C 32 85C 31 VD = 3.0 V Pin = 6.0 dBm 30 29 1710 1725 1740 1755 1770 85C 33.2 32.8 32.4 VD = 3.6 V Pin = 6.0 dBm 1725 1740 1755 1770 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 8. Output Power versus Frequency Figure 9. Power Added Efficiency versus Frequency 1785 46 PAE, POWER ADDED EFFICIENCY (%) Pout , OUTPUT POWER (dBm) 25C 32 1710 1785 35.2 34.8 TA = -40C 34.4 25C 34 85C 33.6 33.6 VD = 4.2 V Pin = 6.0 dBm 33.2 1710 1725 1740 1755 1770 1785 44 TA = -40C 42 25C 40 85C 38 36 VD = 3.6 V Pin = 6.0 dBm 34 1710 f, FREQUENCY (MHz) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 1725 1740 1755 1770 1785 f, FREQUENCY (MHz) MRFIC1819 2.2-65 MRFIC1819 Figure 10. Output Power versus Drain Voltage Figure 11. Power Added Efficiency versus Drain Voltage PAE, POWER ADDED EFFICIENCY (%) TA = -40C 30 85C 10 25C -10 Pin = 6.0 dBm f = 1750 MHz -30 Vpos, POSITIVE VOLTAGE GENERATOR OUTPUT (V) 70 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 30 85C 25C 10 -10 Pin = 6.0 dBm f = 1750 MHz 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 VD, DRAIN VOLTAGE (V) Figure 12. Positive Voltage Generator Output versus Drain Voltage Figure 13. Positive Voltage Output versus Frequency TA = -40C 7.2 6.8 85C 25C 6.4 Pin = 6.0 dBm f = 1750 MHz 0 TA = -40C VD, DRAIN VOLTAGE (V) 7.6 6.0 50 -30 4.4 Vpos, POSITIVE VOLTAGE OUTPUT (V) Pout , OUTPUT POWER (dBm) 50 0.4 0.8 1.2 1.6 2.0 2.4 2.8 VD, DRAIN VOLTAGE (V) MRFIC1819 2.2-66 3.2 3.6 4.0 4.4 4.0 4.4 7.8 7.6 TA = -40C 25C 7.4 7.2 85C 7.0 6.8 1710 VD = 3.6 V Pin = 6.0 dBm 1725 1740 1755 1770 1785 f, FREQUENCY (MHz) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1819 APPLICATIONS INFORMATION Design Philosophy The MRFIC1819 is a high performance three stage GaAs IPA (Integrated Power Amplifier) designed for DCS/PCS handheld radios (1710-1785 MHz DCS frequency band, 1850-1910 MHz PCS frequency band). With a 3.6 V battery supply, it delivers typically 33 dBm of Output Power with 41% Power Added Efficiency. It features an internal Negative Voltage Generator based on RF rectification of the input carrier after its amplification by two dedicated buffer stages (see Internal Block Diagram). This method eliminates spurs found on the Output signal when using dc/dc converter type negative voltage generators, either on or off chip. The buffer also generates a step-up positive voltage which can be used to drive a N-MOS drain switch. The RF input power is split externally (different from MRFIC0919) to the 3 stage RF line-up (Q1, Q2 and Q3) and the Buffer amplifier (Q0, QB). This arrangement allows separate operation of Voltage Generation and Power Amplification for maximum flexibility. External Circuit Considerations The MRFIC1819 can be tuned by changing the values and/or positions of the appropriate external components (see Figure 1: Reference Circuit). While tuning the RF line-up, it is recommended to apply external negative supply in order to prevent any damage to the power amplifier stages. Poor tuning on the input may not provide enough RF power to operate the negative voltage generator properly. Input matching is a shunt-L, series-L high-pass structure and should be optimized at the rated RF Input power (e.g. 6.0 dBm). However, broadband matching is easier with a parallel 680 resistor. This part can be removed to get operation to a lower input power (e.g. 5.0 dBm). Since the Input line feeds both 1st stage and buffer, Input matching should be iterated with Buffer and Q1 drain matching. Note that a dc blocking capacitor is included on chip. RF input signal is fed to buffer amplifier using C12 capacitor (Figure 1). The value of this capacitor determines the power split between RF line-up and buffer amplifier. C12 has been tuned to get the best trade-off between RF gain and negative voltage on Pin 9. First stage buffer amplifier is tuned with a short 80 microstrip line which may be replaced by a chip inductor (T4 on Figure 1). Second stage buffer amplifier is supplied and matched through a discrete chip inductor. Those two elements are tuned to get the maximum output from voltage generator. The overall typical buffer current is about 50 mA; however, the negative generator needs a settling time of 2.0 sec (see burst mode paragraph). During this transcient period of time, both stages are biased to IDSS which is about 200 mA each. The step-up positive voltage available at Pin 1 is both decoupled and maximised by a small shunt capacitor. This positive voltage which is approximately twice the buffer drain voltage can be used to drive a NMOS drain switch for best performances. Q1 drain is supplied and matched through a printed microstrip line that could be replaced by a discrete chip inductor as well. Its length (or equivalent inductor value) is tuned by sliding the RF decoupling capacitor along to get the maximum gain on the first stage. Q2 is supplied through a printed microstrip line that contributes also to the interstage matching in order to provide optimum drive to the final stage. The line length for Q1 and Q2 is small , so replacing it with a discrete inductor is not practical. Q3 drain is fed via a printed line that must handle the high supply current of that stage (2.0 Amp peak) without significant voltage drop. This line can be buried in an inner layer to save PCB space or be a discrete RF choke. Output matching is accomplished with a two stages low-pass network. Easy implementation is achieved with shunt capacitors mounted along a 2.0 mm 30 microstrip transmission line. Value and position are chosen to reach a load line of 5.5 while conjugating the device output parasitics. The network must also properly terminate the second and third harmonic to optimize efficiency and reduce harmonic level. Use of high Q capacitor for the first output matching capactor circuit is recommended in order to get the best Output Power and Efficiency performance. NOTE: The choice of output matching capacitors type and supplier will affect H2 and H3 level and efficiency, because of series resonant frequency. Biasing Considerations The internally generated negative voltage is clamped by an external Zener diode in order to eliminate variation linked to Input power or Buffer supply. This negative voltage is used by three independent bias circuits to set the proper quiescent current of all stages. Each bias circuitry is equivalent to a current source sinking its value from the bias pin. When the bias pins are set to 3.0 V, nominal quiescent current and operating point of each RF stage are selected. Q1 and Buffer share the Bias1 (0.25 mA) while Q2 and Q3 have dedicated Bias2 (0.25 mA) and Bias3 (0.5 mA) respectively. It is also possible to reference those bias pins to Gnd by changing series resistors R1, R2, R3 (Figure 1) that drops the 3.0 V. If those pins are left opened, the corresponding stages are pinched-off. Thus the bias pins can be used as a mean to select the MRFIC1819 or the MRFIC0919 in a dual band configuration. The MRFIC0919 is the partner device to the MRFIC1819 and is designed for GSM900 applications. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1819 2.2-67 MRFIC1819 Control Considerations MRFIC01819 application uses the drain control technique developed for our previous range of GaAs IPAs (refer to application note AN1599). This method relies on the fact that for an RF amplifier operating in saturation mode, the RF output power is proportional to the square of the Amplifier drain voltage: Pout(Watt)=k*VD(Volt)*VD(Volt). In the proposed application circuit (see Figure 2), a PMOS FET is used to switch the IPA drain and vary the drain supply voltage from 0 to battery voltage. As the PMOS FET has a non linear behavior, an OpAmp is included in the application. This OpAmp is linearizing the PMOS by sensing its drain output and gives a true linear relationship between the Control voltage and the RF output voltage. The obtained power control transfer function is so linear and repeatable than it can be used to predict the output power within a dynamic range of 25 to 30 dB over frequency and temperature. This so called "open-loop" arrangement eliminates the need for coupler and detector required for the classical but complex closed-loop control and consequently reduces the Insertion Loss from Power Amplifier to the Antenna. The block diagram (Figure 14) shows the principle of operation as implemented in the application circuit of Figure 2. The OpAmp is connected as an inverter to compensate the negative gain of the PMOS switch. Table 2. Pin Function Description Pin Symbol Description 1 VP 2 VD3 3 RF Out RF output 4 RF Out RF output 5 RF Out RF output 6 Bias3 Third stage bias 7 Bias2 Second stage bias 8 Bias1 Buffer and first stage bias 9 VSS Negative voltage output 10 VSC Negative voltage check Positive voltage output Third stage drain supply 11 VD2 Second stage drain supply 12 VD1 First stage drain supply 13 RF In RF input 14 In Buf Buffer RF input 15 VD0 First buffer stage drain supply 16 VDB Buffer stage drain supply VSC is an open drain internal FET switch which is biased through the negative voltage. Consequently, this pin is high impedance when negative voltage is okay and low impedance (about 40 ) when negative voltage is missing. Operation Procedure The MRFIC1819 is a standard MESFET GaAs Power Amplifier, presence of a negative voltage to bias the RF line-up is essential in order to avoid any damage to the parts. Due to the fact that the negative voltage is generated through rectification of the RF input signal, a minimum input power level is needed for correct operation of the demoboard. The following procedure will guaranty safe operation for doing the RF measurements. Note: make sure that Bias1 (Pin 8 of demoboard Figure 3) is connected 3.0 V or will have equivalent potential for nominal biasing of Buffer stage. 6. Apply RF input power (RF In) > 6.0 dBm. 7. Apply VDB = 3.0 to 5.0 V. 8. Check that VSS reaches approximatively -5.1 V (settling of the negative voltage) (Pin 9). 9. Apply VD1,2&3 = 3.0 to 5.5 V. 10. Measure RF output power and relevant parameters. Proceed in the reverse order to switch off the Power Amplifier. For linear operation, an external negative voltage will have to be supplied to the VSS pin to maintain initial quiescent operating conditions of the FET amplifiers since the RF input will not provide sufficient voltage to operate the negative voltage generator. When using an external negative voltage supply, an input to the buffer (Pin 14) and supply voltages to VDB (Pin 16) and VD0 (Pin 15), would no longer be required. MRFIC1819 2.2-68 Figure 14. Drain Control through PMOS Switch Vbat PMOS Vramp Vdrain Gain Set RF In RF Out PA NOTE: The positive voltage generated by the Buffer stage can be used to supply the OpAmp and make it possible to drive a NMOS switch as a voltage follower. Doing so, the main advantage is to have a lower Rdson switch and better intrinsic linearity. In Figure 15, the plot illustrates the "open-loop" performance regarding temperature stability. The measured datas are diplayed in a log-log scale in order to have a good representation of both the dynamic and the linearity of control. The variation of Pout accross the frequency band are also very small (less than 1.0 dB ripple) and are kept to that small amount when controlling Pout through the Drain voltage. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1819 Figure 15. Temperature Stability of the Open Loop Control Pout , OUTPUT POWER (dBm) 40 35 TA = -40C 30 25C 25 85C 20 15 10 5.0 Pin = 6.0 dBm f = 1750 MHz 0 -5.0 -20 -15 -10 -5.0 0 5.0 10 15 VDD (dBv) Figure 16. Timing Guide 3.0 V OpAmp shdn 0V 3.0 V 20 s Tx En (&RF In) 0V 2.0 V Vramp 0V Burst mode Use Figure 18 as a guide line to perform burst mode measurements with the complete application circuit of Figure 2. Notice that the VSC pin is connected to Vramp (through a resistor) and acts as a pull down when negative voltage is missing so that drain voltage is not applied to the RF line-up. - Bursting the OpAmp with its Pin 8 (shdn) is not mandatory during a call as the OpAmp current consumption is very small (1.0 to 2mA). This pin is mainly used for the idle mode of the radio. In any case, the wake-up time of the OpAmp is very short. 2.0 s - Vramp can be applied soon after Tx EN since the internal negative voltage generator settles in less than 2.0 s. - Tx EN signal can be used to switch the input power (using a driver or attenuator) in order to provide higher isolation for on/off burst dynamic. References (Motorola application notes) AN1599 - Power Control with the MRFIC0913 GaAs Integrated Power Amplifier and MC33169 Support IC. AN1602 - 3.6 V and 4.8 V GSM/DCS1800 Dual Band PA Application with DECT capability Using Standard Motorola RFIC's. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1819 2.2-69 MRFIC1854A Advance Information 1.9 GHz CDMA Upmixer/Exciter The MRFIC1854A is an integrated upmixer and exciter amplifier designed specifically for PCS CDMA digital cellular radios. The exciter amplifier incorporates a temperature compensated linear gain control and selectable bias to reduce power consumption. The design utilizes Motorola's RF BiCMOS1 process to yield superior performance in a cost effective monolithic device. * * * * * * 1.9 GHz CDMA UPMIXER/EXCITER SEMICONDUCTOR TECHNICAL DATA Total Supply Current CDMA Mode = 55 mA Typical 65 dB Dynamic Range Gain Control Upmixer Output IP3 = 6.0 dBm Typical Exciter Output IP3 = 22 dBm Typical 20 Supply Voltage Range = 2.7 to 3.6 V Adjacent Channel Power (ACPR) @ 1.25 MHz Offset (Pout = 3.0 dBm) = -58 dBc Typical 1 (Scale 2:1) PLASTIC PACKAGE CASE 948M (TSSOP-20EP, Tape & Reel Only) PIN CONNECTIONS Simplified Block Diagram IF Vcntrl LO LO Buffer IF In+ RF Out+ IF In- RF Out- IF In+ 1 20 IF In- Enable1 2 LO In 3 19 VCC4 18 RF Out+ Bias Select 4 17 RF Out- IF Vcntrl 5 16 Gnd VCC3 Gnd 6 15 Gnd 7 14 Gnd VCC1 RF Vcntrl 8 13 Exciter In 9 12 VCC2 11 Enable2 Exciter Out 10 (Top View) Exciter Out Exciter In Bias Gain Control ORDERING INFORMATION Bias Select RF Vcntrl Device This device contains 305 active transistors. MRFIC1854A 2.2-70 Operating Temp Range Package MRFIC1854AR2 TA = -40 to 85C TSSOP-20EP MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1854A MAXIMUM RATINGS Rating Symbol Value Unit VCC 5.0 V IF Input IF In+, IF In- 10 dBm LO Input LO 10 dBm Operating Temperature TA -40 to 85 C Tstg -65 to 150 C Supply Voltage Storage Temperature NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Recommended Operating Conditions and Electrical Characteristics tables or Pin Descriptions section. 2. Meets Human Body Model (HBM) 50 V and Machine Model (MM) 40 V. This device is rated Moisture Sensitivity Level (MSL) 4. ESD data available upon request. RECOMMENDED OPERATING CONDITIONS Characteristic Symbol Min Typ Max Unit Supply Voltage VCC 2.7 - 3.6 V RF Frequency Range fRF 1700 - 2000 MHz IF Frequency Range fIF 70 - 250 MHz LO Frequency Range fLO 1500 - 2100 MHz IF Vcntrl, RF Vcntrl 0.1 - 1.7 V Gain Control Voltage Range ELECTRICAL CHARACTERISTICS (VCC = 2.7 V, PLO = -13 dBm @ 2010 MHz, PIF = -27 dBm (differential) @ 130 MHz, VEnable1 = VEnable2 = 2.4 V, TA = -40 to 85C, Test Circuit in Figure 1, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit CASCADE PERFORMANCE (Filter included between RF Out and Exciter input. Filter insertion loss is 4.0 dB) Output Power Vctrl = 1.7 V Vctrl = 1.3 V Pout Dynamic Range (Vctrl = 0.1 to 1.7 V) DR Adjacent Channel Power @ 1.25 MHz Offset High Current (Bias Select = 0.4 V, Pout = 3.0 dBm (set by Vctrl) ) Supply Current High Current (Bias Select = 0.4 V) Low Current (Bias Select = 2.4 V) dBm 3.0 2.0 5.0 3.8 - - 50 65 - -52 -58 - - - 55 35 80 50 dB ACPR dBc ICC mA MIXER SECTION Conversion Gain GC - 16 - dB Noise Figure NF - 12 - dB Output Third Order Intercept Point OIP3 - 6.0 - dBm IF AGC Dynamic Range DRIF 25 38 - dB Gain (No Attenuation) G - 24 - dB Noise Figure NF - 5.0 - dB Output Third Order Intercept Point OIP3 - 22 - dBm RF AGC Dynamic Range DRRF 25 38 - dB EXCITER SECTION MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1854A 2.2-71 MRFIC1854A PIN FUNCTION DESCRIPTION Pin Function 1 IF In+ 2 Enable 1 (See Table 2) Description Voltage On (V) Mixer IF input pin. Input impedance is 500 . Voltage Off (V) -33 dBm (Typ) Enable pin. A logic High (>2.4 V) enables entire chip and Low (<0.4 V) disables chip. Mixer LO input pin. 2.4 to 3.6 3 LO In 4 Bias Select Bias select pin. Logic Low (<0.4 V) selects higher current bias for increased linearity and output power. High (>2.4 V) selects lower bias for reduced current consumption. 5 IF AGC Control Voltage IF AGC gain control pin. A 30 dB dynamic range can be acheived by adjusting voltage from 0.1 V (low gain) to 1.7 V (high gain). 0.1 to 1.7 6 VCC3 Supply Voltage. 2.7 to 3.6 7 Gnd 8 VCC1 9 RF AGC Control Voltage 10 Exciter Out 11 Enable 2 (See Table 2) 12 VCC2 13 Exciter In 14 15 0 to 0.4 -13 dBm (Typ) Ground connection. - Supply Voltage 2.7 to 3.6 RF AGC control pin. A 30 dB dynamic range can be acheived by adjusting voltage from 0.1 V (low gain) to 1.7 V (high gain). 0.1 to 1.7 RF exciter amplifier output pin. - Tx Enable pin. A logic High (>2.4 V) enables Tx path and Low (<0.4 V) disables Tx path except LO Buffer. 2.4 to 3.6 Supply Voltage 2.7 to 3.6 RF exciter amplifier input pin. - Gnd Ground connection. - Gnd Ground connection. - 16 Gnd Ground connection. - 17 RF Out- Mixer RF output pin. 18 RF Out+ Mixer RF output pin. 19 VCC4 Supply Voltage 20 IF In- Mixer IF input pin. Input impedance is 500 . 0 to 0.4 2.7 to 3.6 -33 dBm (Typ) Table 1. Enable Truth Table MRFIC1854A 2.2-72 Enable 1 Enable 2 Mode 0 0 Disabled 0 1 Not Applicable 1 0 Standby Mode: Disables mixer/exciter, except LO buffer 1 1 Tx Enabled MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1854A Figure 1. Application Circuit L4 L1 C1 C19 IF In- IF In+ C2 C18 VCC4 Enable LO In 2 T1 C3 IF AGC Mixer 3 18 Bias Select 17 IF Vcntrl 5 16 VCC3 6 VCC1 C5 T2 C6 C7 LO Buffer T4 C15 14 8 13 9 12 RF AGC T5 C13 Exciter In C20 11 10 RF Out C14 T3 15 7 Exciter C16 L3 19 4 C4 C17 20 1 VCC2 RF Vcntrl C11 C12 C8 Exciter Out Tx Enable L2 VCC Exciter C9 C10 C1, C19 C2, C18 C3 C4, C6, C9, C12, C16 C5, C8, C10, C11, C13, C15, C17 C7 C14 C20 1.0 nF 4.7 pF 1.7 pF 10 nF 30 pF 47 pF 3.6 pF 1.0 pF L1, L4 L2 L3 T1 T2 T3 T4 T5 220 nH 10 nH 18 nH 50 Microstrip, L = 670 mils 50 Microstrip, L = 150 mils 50 Microstrip, L = 400 mils 50 Stripline, L = /2 @ 1880 MHz 50 Microstrip, L = 350 mils NOTES: 1. IF ports matched to 50 for testing purposes. 2. Microstrip line and C7 form part of RF AGC/Exciter interstage match. 3. Er = 4.45 and board thickness = 18 mils. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1854A 2.2-73 MRFIC1854A Figure 3. Gain versus Frequency (High Current Mode) Figure 2. Gain versus Frequency (Low Current Mode) 33 38 32.5 32 25C 36 GAIN (dB) GAIN (dB) TA = -40C 37 TA = 25C 31.5 -40C 31 VCC = 2.7 V Vcntl = 1.7 V Pin = -27 dBm 30 29.5 1850 1860 1870 VCC = 2.7 V Vcntl = 1.7 V Pin = -27 dBm 34 85C 30.5 35 1880 1890 33 1900 85C 32 1850 1910 1890 1900 Figure 5. Gain versus LO Power (High Current Mode) 1910 40 25C TA = -40C 38 36 30 TA = 85C GAIN (dB) GAIN (dB) 1880 Figure 4. Gain versus LO Power (Low Current Mode) 32 -40C 28 26 25C 34 32 VCC = 2.7 V Vcntl = 1.7 V fLO = 2010 MHz 24 22 -18 VCC = 2.7 V Vcntl = 1.7 V fLO = 2010 MHz 85C 30 -16 -14 -12 -10 28 -18 -8.0 -16 -14 -12 -10 -8.0 PLO, LO POWER (dBm) PLO, LO POWER (dBm) Figure 6. LO Feedthrough versus Control Voltage (Low Current Mode) Figure 7. LO Feedthrough versus Control Voltage (High Current Mode) -10 -10 -15 -15 TA = -40C 25C -20 LO FEEDTHROUGH (dBm) LO FEEDTHROUGH (dBm) 1870 f, FREQUENCY (MHz) 34 -25 85C -30 -35 -40 -45 VCC = 2.7 V PLO= -13 dBm fLO = 2010 MHz -50 -55 -60 1860 f, FREQUENCY (MHz) 0 0.2 0.4 0.6 0.8 1.0 1.2 Vcntrl, CONTROL VOLTAGE (V) MRFIC1854A 2.2-74 1.4 1.6 TA = -40C -20 25C -25 -30 85C -35 -40 VCC = 2.7 V PLO = -13 dBm fLO = 2010 MHz -45 -50 1.8 -55 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Vcntrl, CONTROL VOLTAGE (V) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1854A Figure 9. Output Power versus Control Voltage (High Current Mode) Figure 8. Output Power versus Control Voltage (Low Current Mode) 20 25C & -40C 0 Pout , OUTPUT POWER (dBm) Pout , OUTPUT POWER (dBm) 10 -10 -20 TA = 85C -30 -40 -50 VCC = 2.7 V Pin = -27 dBm fRF = 1880 MHz -60 -70 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 25C & -40C 0 -10 TA = 85C -20 -30 -40 VCC = 2.7 V Pin = -27 dBm fRF = 1880 MHz -50 -60 -70 1.8 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Vcntrl, CONTROL VOLTAGE (V) Vcntrl, CONTROL VOLTAGE (V) Figure 10. Adjacent Channel Power versus Control Voltage (High Current Mode) ACPR, ADJACENT CHANNEL POWER @ 1.25 MHz OFFSET (dBm) -40 VCC = 2.7 V Pin = -27 dBm fRF = 1880 MHz -45 TA = -40C -50 25C -55 -60 85C -65 -70 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Vcntrl, CONTROL VOLTAGE (V) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1854A 2.2-75 MRFIC1854A APPLICATION INFORMATION Design Philosophy The MRFIC1854A has three operating states, enable, standby, and disable. These states are controlled by the truth table shown in Table 2. The device is fully operational during the enable state and the bias level can be selected. A high bias current for maximum power CDMA or a lower bias current for CDMA at lower powers can be selected via the Bias Select pin. In the high current CDMA mode, the quiescent current is increased to maximize the linearity of the device. In the lower current bias state, the quiescent current is reduced to save current during lower power CDMA operation. The standby mode can be used to reduce current consumption during Voice Activity Factoring. In the standby mode, the LO buffer remains on to prevent VCO pulling and the bandgap reference bias circuit remains on to assure rapid device turn on. Current consumption in standby mode is 10 mA typical. The disable mode is used to turn the MRFIC1854A completely off. Leakage current in this mode is only a few microamps. The mixer is a double-balanced "Gilbert-cell" design with a balanced LO buffer amplifier. The input and output of the mixer are differential. The IF AGC is a differential amplifier that uses the "current steering" method for gain control. The IF AGC/mixer combination has 16 dB of gain and typically draws 20 mA quiescent current in the CDMA mode. An external filter is required between the mixer and RF AGC amplifier to reduce RX band noise. Figure 1 shows the applications circuit for the MRFIC1854A. In this circuit, the IF ports of the IF AGC have been matched to 50 for testing purposes. In the actual application, the differential IF ports of the mixer would be impedance matched to an IF SAW filter. The differential impedance of the IF ports is 1600 ohms. The RF output of the mixer is configured as a differential output. A stripline balun is used to convert the RF output to single ended. DC current to the open collector output of the mixer is provided by inductor, L3 (18 nH) and transmission line, T4. Transmission lines T3 and T4, and capacitors C15 (30 pF) and C14 (3.6 pF) form the balun/output match for the mixer. The RF AGC amplifier is a single-ended cascode design employing the standard "current steering" method of gain control. It's ground is brought out through pin number 15 so inductance can be added to degenerate the gain for a lower noise floor. The maximum gain is around 13 dB. It typically MRFIC1854A 2.2-76 draws 9.0 mA quiescent current in CDMA mode. The RF Vcntrl signal is buffered with an on-chip OpAmp then preconditioned with temperature compensation and dB/V linearization before being applied to the RF AGC amplifier. Transmission line T2 and capacitor C7 (47 pF) are for the interstage match between the RF AGC and the exciter amplifier. The exciter amplifier is a simple common emitter design. It is grounded directly to the exposed pad which results in 12 dB of gain. It typically draws 24 mA bias current in CDMA. Inductor L2 (10 nH), capacitor C8 (30 pF), and C10 (30 pF) provide the output matching. L2 also provides a DC current path for the open collector output. Noise Power Considerations In CDMA systems, the handset is required to dynamically adjust its output power to specific levels. This requires a dynamic range of as much as 90 dB from the transmitter. Another key performance specification in CDMA systems is the output noise power, both in band and out of band. Noise power specifications has caused the noise figure of the transmitter to become an important system consideration. The cascaded noise figure of the transmitter can be analyzed with the same equation used in receiver analysis. The only difference is the noise source is from the transmitter (modulator) instead of the atmosphere. Noise Source Gain = Noise Figure = NF cascaded G1 NF1 + NF1 ) G2 NF2 NF 2 G3 NF3 *1 G1 ) NF 3 *1 G 1G 2 This equation above shows that the cascaded noise figure is better if the gain is higher and the noise figure is lower for the stages close to the noise source. For this reason, it is advantageous to implement some of the gain control of a CDMA transmitter in the RF section. The MRFIC1854A integrates a RF AGC amplifier after the upmixer to improve the overall noise figure of the transmitter. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1854A Table 2. Scattering Parameters for Exciter Amplifier (VDD = 2.7 V, TA = 25C, RF Vcntrl = 1.8 V, 50 System) AAAAA AAAAAAAA AAAAAAAA AAAAAAAAA AAAAAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAAAAA AAAAAAAA AAAAAAAAA AAAAAAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA f S11 S21 S12 S22 (MHz) S11 6 S21 6 S12 6 S22 6 1700 0.319 -121.64 15.566 84.09 0.00476 -139.21 0.219 -12.29 1725 0.315 -123.78 16.291 76.55 0.00415 -126.71 0.222 -24.12 1750 0.310 -126.93 16.975 68.23 0.00406 -143.61 0.223 -35.58 1775 0.309 -130.34 17.590 56.64 0.00336 -143.09 0.237 -51.49 1800 0.304 -132.64 17.834 47.84 0.00406 -144.41 0.248 -64.80 1825 0.294 -137.08 17.944 35.98 0.00268 -141.85 0.271 -82.53 1850 0.286 -139.92 17.871 26.91 0.00411 -127.38 0.278 -94.74 1875 0.274 -141.87 17.591 17.93 0.00286 -132.49 0.298 -104.71 1900 0.261 -143.08 17.141 9.25 0.00351 -136.62 0.308 -114.83 1925 0.249 -145.61 16.374 -1.69 0.00447 -139.69 0.324 -128.42 1950 0.242 -146.86 15.738 -9.57 0.00322 -153.09 0.335 -137.57 1975 0.233 -148.86 15.046 -17.01 0.00411 -139.41 0.346 -146.12 2000 0.225 -149.74 14.132 -26.57 0.00490 -139.12 0.350 -155.24 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1854A 2.2-77 MRFIC1854A Table 3. Scattering Parameters for Upmixer (VDD = 2.7 V, TA = 25C, IF Vcntrl = 1.8 V, 50 System) AAAAA AAAAAAAAA AAAAAAAAA AA AAAAA AAAAAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AA AAAAA AAAAA AAAAA AAAAAAAAA AAAAAAAAA AAAAAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AA AAAAA AAAAA AAAAA f IF In+ IF In- f RF Out (Pin 17) (MHz) S11 6 S11 6 (MHz) S11 6 70 0.830 -2.07 0.832 -2.24 1700 0.815 -55.16 80 0.828 -2.73 0.830 -2.71 1725 0.814 -55.65 90 0.826 -3.01 0.828 -2.95 1750 0.814 -56.29 100 0.826 -3.21 0.827 -3.22 1775 0.817 -56.98 110 0.822 -3.57 0.825 -3.67 1800 0.820 -57.45 120 0.821 -3.74 0.823 -3.93 1825 0.823 -58.68 130 0.821 -3.93 0.823 -4.08 1850 0.825 -59.57 140 0.818 -4.25 0.820 -4.42 1875 0.826 -60.85 150 0.818 -4.54 0.821 -4.57 1900 0.825 -62.07 160 0.818 -4.61 0.820 -4.76 1925 0.815 -63.81 170 0.817 -4.85 0.819 -5.06 1950 0.807 -64.79 180 0.815 -5.12 0.819 -5.29 1975 0.794 -65.64 190 0.815 -5.26 0.819 -5.50 2000 0.782 -66.58 200 0.813 -5.45 0.816 -5.76 210 0.815 -5.71 0.818 -6.15 220 0.812 -5.82 0.816 -6.13 230 0.811 -6.38 0.817 -6.54 240 0.812 -6.54 0.814 -6.72 AAAAA AAAAAAAA A AAAAA AAAAAAAA A AAAAA AAAAAAAA AAAAA AAAA AAAAA A AAAAA AAAA AAAAA A AAAAA AAAA AAAAA AAAAAAAA AAAAAAAA AAAAAAAA AAAAA AAAA AAAAA A AAAA AAAAA AAAAA A AAAA AAAAA AAAAA 250 0.810 f -6.76 LO In 0.815 -6.98 f LO In f LO In (MHz) S11 6 (MHz) S11 6 (MHz) S11 6 1500 0.708 -47.83 1725 0.677 -54.36 1950 0.624 -58.20 1525 0.704 -48.38 1750 0.670 -55.34 1975 0.623 -59.40 1550 0.702 -49.02 1775 0.654 -56.33 2000 0.612 -60.59 1575 0.696 -49.55 1800 0.641 -56.34 2025 0.605 -61.04 1600 0.694 -50.11 1825 0.636 -56.65 2050 0.599 -61.70 1625 0.691 -50.83 1850 0.631 -56.59 2075 0.592 -62.19 1650 0.688 -51.47 1875 0.630 -57.04 2100 0.588 -62.99 1675 0.691 -52.18 1900 0.626 -57.38 1700 0.681 -53.42 1925 0.622 -57.84 MRFIC1854A 2.2-78 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1856 Advance Information Dual-Band/Dual-Mode pHEMT GaAs IPA The MRFIC1856 is designed for dual-band subscriber equipment applications at 3.6 V in the cellular (800 MHz) and PCS (1900 MHz) bands. The device incorporates two pHEMT GaAs amplifier chains in one package, allowing the most flexibility and highest performance while reducing board space. Target applications include dual-band/dual-mode handsets for TDMA/AMPS and PCS TDMA cellular phones. * * * * * DUAL-BAND/DUAL-MODE GaAs INTEGRATED POWER AMPLIFIER SEMICONDUCTOR TECHNICAL DATA Designed to Operate in Frequency Ranges of: 824 to 849 MHz TDMA/AMPS 1850 to 1910 MHz PCS TDMA 3.6 V Operation 20 30 dBm Output Power PCS TDMA 31 dBm Output Power TDMA Cellular 1 (Scale 2:1) 31 dBm Output Power AMPS PLASTIC PACKAGE CASE 948M (TSSOP-20EP, Tape & Reel Only) PIN CONNECTIONS Simplified Block Diagram Vd1A VSS Vd2A Vg3A Bias VG3A 1 20 VD2A VD1A VSS 2 19 RFoA/VD3A 3 18 RFoA/VD3A RFinA 4 17 RFoA/VD3A VG1A 5 16 Gnd VG1B 6 15 RFoB/VD3B RFinB 7 14 RFoB/VD3B Gnd 8 13 RFoB/VD3B VD1B VG3B 9 12 RFoB/VD3B 10 11 VD2B VG1A (Top View) RFinA RFoA/VD3A RFinB RFoB/VD3B VG1B ORDERING INFORMATION VD1B VD2B VG3B Device This device contains 8 active transistors. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Operating Temp Range MRFIC1856R2 TC = -35 to 85C Package TSSOP-20EP MRFIC1856 2.2-79 MRFIC1856 MAXIMUM RATINGS Symbol Value Unit Supply Voltage Rating VD 4.8 Vdc RF Input Power Pin 15 dBm Gate Voltage Vg -6 to -0.3 Vdc Tstg -65 to 150 C TC -35 to 85 C RqJC 15 C/W Storage Temperature Range Operating Case Temperature Thermal Resistance, Junction to Case NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Electrical Characteristics tables. 2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) 100 V and Machine Model (MM) <50 V. Additional ESD data available upon request. RECOMMENDED OPERATING CONDITIONS Characteristics Symbol Limit Unit Frequency Range - TDMA/AMPS fRF 824 to 849 MHz Frequency Range - PCS TDMA fRF 1850 to 1910 MHz VD1,2,3A, VD1,2,3B 3.0 to 4.8 Vdc VG -4.5 to -2.5 Vdc Supply Voltage Range Negative Supply Voltage ELECTRICAL CHARACTERISTICS (VD1,2,3A = 3.6 V, TA = 25C, unless otherwise noted) Characteristic Symbol Min Typ Max Unit Quiescent Supply Current IDQ - - 300 mA Negative Supply Current ISS - - 3.0 mA Efficiency PAE 40 45 - % Gain GP 29 - - Adj Channel Power (30 kHz) ACP - - -29 Alt Channel Power (60 kHz) ALT - - -48 dBc Rx Band Noise (30 kHz BW) - - -92 - dBm Harmonic Output Power 2fo 3fo - - - - - -34 -40 - - -60 dBc TDMA CELLULAR PERFORMANCE (Pout = 31 dBm, f = 840 MHz) Spurious Output, 10:1 VSWR, all angles on output dBc dBc AMPS PERFORMANCE (Pout = 31 dBm, f = 840 MHz) Quiescent Supply Current IDQ - - 300 mA Negative Supply Current ISS - - 3.0 mA Efficiency (Pout = 31 dBm) PAE - 48 - % Gain GP 30 - - - - - - -34 -40 Harmonic Output Power 2fo 3fo - dBc Rx Band Noise (30 kHz BW) - - -92 - dBm Spurious Output, 10:1 VSWR, all angles on output - - - -60 dBc Quiescent Supply Current - - - 300 mA Negative Supply Current - - - 3.0 mA Efficiency - 30 35 - % Gain - 28 - - PCS TDMA PERFORMANCE (Pout = 30 dBm, f = 1.88 GHz) MRFIC1856 2.2-80 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1856 ELECTRICAL CHARACTERISTICS (continued) (VD1,2,3A = 3.6 V, TA = 25C, unless otherwise noted) Characteristic Symbol Min Typ Max Unit Adj Channel Power (30 kHz) - - - -29 dBc Alt Channel Power (60 kHz) - - - -48 dBc Rx Band Noise (30 kHz BW) - - -94 - dBm Harmonic Output Power 2fo 3fo - - - - - -40 -40 Spurious Output, 10:1 VSWR, all angles on output - - - -60 PCS TDMA PERFORMANCE (continued) (Pout = 30 dBm, f = 1.88 GHz) dBc dBc Figure 1. 3.6 V Applications Circuit VD2A VD1A VD3A VG3A C7 C3 C9 R1 C6 C5 C2 C4 C29 T3 L1 20 1 T2 19 2 VSS C1 3 RF InA VG12 18 4 17 5 16 6 15 7 14 8 13 9 12 10 11 C13 T6 RF InB C14 Bias T11 C10 C30 T10 T9 C12 RF OutA C11 C27 RF OutB C15 T7 C16 L2 C25 L3 T8 R2 C18 T5 T4 C21 VG3B C24 C22 VD1B C1,C2,C5,C12,C17, 100 pF C28 3.9 nF C3,C4,C6,C13,C21 1000 pF C7,C18 10 F C9,C22,C24 20 F C10 12 pF C11 5.1 pF C14 22 pF C15,C30 1.3 pF C17 VD3B VD2B C16 C25 C27 C29 6.2 pF 4.7 pF 10 pF 3.9 pF L1,L2,L3 15 nH R1 R2 50 100 NOTE: C29 added for 2nd harm trap. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 50 , Microstrip, L = 128 mils 50 , Microstrip, L = 50 mils 50 , Microstrip, L = 60 mils 90 , Microstrip, L = 88 mils 90 , Microstrip, L = 600 mils 63 , Microstrip, L = 133 mils 50 , Microstrip, L = 133 mils 50 , Microstrip, L = 10 mils 50 , Microstrip, L = 330 mils 50 , Microstrip, L = 145 mils MRFIC1856 2.2-81 MRFIC1856 Figure 2. 4.8 V Applications Circuit VD2A VD1A VD3A VG3A C7 C9 R1 C3 C6 C5 C4 C2 T3 C29 L1 20 1 T2 19 2 VSS = -3.7 V C1 RF InA 3 VG1/2 18 4 17 5 16 6 15 7 14 8 13 9 12 10 11 C13 T6 RF InB C14 Bias T4 T7 C16 L2 C10 C12 RF OutA C11 C27 C25 L3 T8 C17 C21 VG3B C24 C22 VD1B MRFIC1856 2.2-82 C30 T10 T9 R2 C1,C2,C5,C12,C17, 100 pF C28 3.9 nF C3,C4,C6,C13,C21 1000 pF C7,C18 10 F C9,C22,C24 20 F C10 12 pF C11 5.1 pF C14 22 pF C15,C30 1.3 pF T11 RF OutB C15 C18 T5 VD3B VD2B C16 C25 C27 C29 6.8 pF 4.3 pF 10 pF 3.9 pF L1,L2,L3 15 nH R1 R2 50 100 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 50 , Microstrip, L = 128 mils 50 , Microstrip, L = 50 mils 50 , Microstrip, L = 60 mils 90 , Microstrip, L = 88 mils 90 , Microstrip, L = 600 mils 63 , Microstrip, L = 133 mils 50 , Microstrip, L = 133 mils 50 , Microstrip, L = 10 mils 50 , Microstrip, L = 330 mils 50 , Microstrip, L = 145 mils MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1856 TDMA PERFORMANCE Figure 4. Gain versus Frequency Figure 3. Gain versus Frequency 33.5 33 36 34 TA = -35C VDD = 4.8 V 32 32 GAIN (dB) GAIN (dB) 32.5 25C 31.5 85C 3.6 V 30 28 31 3.0 V 30.5 30 820 26 VDD = 3.6 V 825 830 840 835 845 24 820 850 850 40 Pout , OUTPUT POWER (dBm) Pout , OUTPUT POWER (dBm) 845 Figure 6. Output Power versus Input Power TA = -35C 25C 20 85C 15 f = 836 MHz VDD = 3.6 V 10 -15 -5.0 -10 0 5.0 35 VDD = 4.8 V 30 25 3.6 V 20 3.0 V 15 f = 836 MHz TA = 25C 10 5.0 -20 10 -15 -10 -5.0 0 5.0 Pin, INPUT POWER (dBm) Pin, INPUT POWER (dBm) Figure 7. Adjacent Channel Power versus Output Power Figure 8. Adjacent Channel Power versus Output Power -15 10 -15 ACPR, ADJACENT CHANNEL POWER @ 30 kHz OFFSET (dBc) ACPR, ADJACENT CHANNEL POWER @ 30 kHz OFFSET (dBc) 840 Figure 5. Output Power versus Input Power 25 f = 836 MHz VDD = 3.6 V -25 -30 TA = -35C, 25C, & 85C -35 -40 5.0 835 830 f, FREQUENCY (MHz) 30 -20 825 f, FREQUENCY (MHz) 35 5.0 -20 TA = 25C 10 15 20 25 30 35 40 Pout, OUTPUT POWER (dBm) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA -20 f = 836 MHz TA = 25C VDD = 3.0 V -25 4.8 V 3.6 V -30 -35 -40 5.0 10 15 20 25 30 35 40 Pout, OUTPUT POWER (dBm) MRFIC1856 2.2-83 MRFIC1856 TDMA PERFORMANCE Figure 10. Alternate Channel Power versus Output Power Figure 9. Alternate Channel Power versus Output Power -35 -40 -30 f = 836 MHz VDD = 3.6 V ALTERNATE CHANNEL POWER @ 60 kHz OFFSET (dBc) ALTERNATE CHANNEL POWER @ 60 kHz OFFSET (dBc) -30 -45 -50 TA = 25C -55 -60 -35C -65 -35 -40 f = 836 MHz TA = 25C 3.6 V -45 -50 4.8 V -55 -60 VDD = 3.0 V -65 85C -70 10 15 20 25 30 35 -70 10 40 20 25 30 35 Pout, OUTPUT POWER (dBm) Figure 11. Gain versus Frequency Figure 12. Gain versus Frequency 40 34 32 31 32 TA = -35C 30 GAIN (dB) GAIN (dB) 15 Pout, OUTPUT POWER (dBm) 25C 29 VDD = 4.8 V 30 3.6 V 28 85C 3.0 V 28 26 VDD = 3.6 V 27 1850 1860 1870 1880 1890 1900 24 1850 1910 1880 1890 1900 Figure 13. Output Power versus Input Power Figure 14. Output Power versus Input Power 1910 40 Pout , OUTPUT POWER (dBm) Pout , OUTPUT POWER (dBm) 1870 f, FREQUENCY (MHz) TA = -35C 30 25 25C 20 85C 15 f = 1880 MHz VDD = 3.6 V 10 -15 -10 -5.0 0 Pin, INPUT POWER (dBm) MRFIC1856 2.2-84 1860 f, FREQUENCY (MHz) 35 5.0 -20 TA = 25C 5.0 35 VDD = 4.8 V 30 25 3.6 V 20 3.0 V 15 f = 1880 MHz TA = 25C 10 10 5.0 -20 -15 -10 -5.0 0 5.0 10 Pin, INPUT POWER (dBm) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1856 TDMA PERFORMANCE Figure 15. Adjacent Channel Power versus Output Power Figure 16. Adjacent Channel Power versus Output Power -20 -15 ACPR, ADJACENT CHANNEL POWER @ 30 kHz OFFSET (dBc) ACPR, ADJACENT CHANNEL POWER @ 30 kHz OFFSET (dBc) -15 f = 1880 MHz VDD = 3.6 V TA = 25C & 85C -25 -30 -35C -35 -40 5.0 10 15 20 25 30 4.8 V 3.6 V -35 10 15 20 25 30 35 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 17. Alternate Channel Power versus Output Power Figure 18. Alternate Channel Power versus Output Power 40 -30 f = 1880 MHz VDD = 3.6 V -45 25C -50 TA = -35C -55 -60 85C -65 -70 5.0 VDD = 3.0 V -30 -40 5.0 ALTERNATE CHANNEL POWER @ 60 kHz OFFSET (dBc) ALTERNATE CHANNEL POWER @ 60 kHz OFFSET (dBc) -40 f = 1880 MHz TA = 25C -25 35 -30 -35 -20 10 15 20 25 30 35 -35 -40 f = 1880 MHz TA = 25C -45 3.6 V -50 VDD = 3.0 V -55 -60 4.8 V -65 -70 5.0 Pout, OUTPUT POWER (dBm) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 10 15 20 25 30 35 Pout, OUTPUT POWER (dBm) MRFIC1856 2.2-85 MRFIC1859 Dual-Band/GSM 3.6 V Integrated Power Amplifier The MRFIC1859 is a dual-band, single supply RF Power Amplifier for GSM900/DCS1800 hand held radios. The on-chip spur free voltage generator reduces the number of external components by eliminating the need for a negative voltage supply. The device output power can be controlled open loop without the use of directional coupler and detection diode. The MRFIC1859 is General Packet Radio Service (GPRS) compatible. The device is packaged in a TQFP-32EP with exposed backside pad allowing excellent electrical and thermal performance through a solderable contact. * * * * * DUAL-BAND GSM 3.6 V IPA SEMICONDUCTOR TECHNICAL DATA Single Positive Supply Solution Input/Output External Matching High Power and Efficiency Typical 3.6 V Characteristics: Pout = 36.2 dBm, PAE = 53% for GSM Pout = 34 dBm, PAE = 43% for DCS Crosstalk Harmonic Leakage of -27 dBm Typical (GSM) 32 1 (Scale 2:1) PLASTIC PACKAGE CASE 873E (TQFP-32EP) ORDERING INFORMATION Device MRFIC1859R2 Operating Temperature Range Package TC = -35 to 100C TQFP-32EP Simplified Block Diagram D1G D2B B2B B1G B23G D2G InG OutG Negative and Positive Voltage Generator VSS VP VSC InD OutD B1D D1D D1B G2D B23D D2D This device contains 21 active transistors. MRFIC1859 2.2-86 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1859 PIN CONNECTIONS VSS D2B B2B OutD 32 31 30 29 OutD Out D OutD 28 27 OutD 26 25 24 B23D B23G 1 VP 2 23 D2D Gnd 3 22 D2D OutG 4 21 VSC OutG 5 20 G2D OutG 6 19 D1G OutG 7 18 B1G OutG 8 17 InG 9 10 11 12 13 14 15 16 M2G D2G D2G D2G D1D D1B B1D InD Exposed Pad (Gnd-on bottom) MAXIMUM RATINGS Symbol Value Unit Supply Voltage Rating VD1B,D2B VD1G,D2G, D3G,D1D, D2D,D3D 6.0 V RF Input Power InG, InD 12 dBm OutG OutD 38 36 TC -35 to 100 Tstg -55 to 150 C RJC 15 C/W RF Output Power GSM Section DCS Section dBm Operating Case Temperature Range Storage Temperature Range Thermal Resistance, Junction to Case C NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Recommended Operating Contitions or Electrical Characteristics tables. 2. Meets Human Body Model (HBM) 100 V and Machine Model (MM) 60 V. Additional ESD data available upon request. RECOMMENDED OPERATING CONDITIONS Characteristic Symbol Min Typ Max Unit VD1B,D2B VD1G,D2G, D3G,D1D, D2D,D3D 2.8 - 5.5 V Input Power GSM InG 3.0 - 10 dBm Input Power DCS InD 5.0 - 12 dBm Supply MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1859 2.2-87 MRFIC1859 ELECTRICAL CHARACTERISTICS (VD1B, D2B = 3.6 V, VD1G,D2G,D3G = 3.6 V or VD1D,D2D,D3D = 3.6 V, Peak measurement at 12.5% duty cycle, 4.6 ms period, TA = 25C, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Frequency Range BW 880 - 915 MHz Output Power Pout 35 36.2 - dBm Power Added Efficiency PAE 45 53 - % Output Power @ Low Voltage (VD1G,D2G,D3G= 3.0 V) Pout dBm GSM SECTION (Pin = 3.0 dBm) 33.5 34.7 - Harmonic Output 2fo 3fo - - -35 -60 -30 -45 Second Harmonic Leakage at DCS Output (Crosstalk isolation) - -25 -20 dBm dBc Input Return Loss |S11| - 12 - dB Output Power Isolation with Buffer On (Pin = 3.0 dBm, VD1B,D2B = 3.6 V, VD1G,D2G,D3G = 0 V) Pon - -8.0 -3.0 dBm Output Power Isolation (Pin = 3.0 dBm, VD1B,D2B = 0 V, VD1G,D2G,D3G = 0 V) Poff - -42 - dBm Noise Power in Rx Band 925 to 960 MHz (100 kHz measurement bandwidth) 925 to 935 MHz 935 to 960 MHz NP Negative Voltage (Pin = 2.0 dBm, VD1B, D2B = 3.0 V) Negative Voltage Settling time (Pin = 3.0 dBm, VD1B,D2B stepped from 0 to 3.0 V) Stability-Spurious Output (Pout = 5.0 to 35 dBm, Load VSWR = 6:1 all Phase Angle, Source VSWR = 3:1, at any phase angle Adjust VD1G,D2G,D3G for specified power) dBm -67 -79 VSS - - -4.85 V TS - 0.7 2.0 s Pspur - - -60 dBc Load Mismatch Stress (Pout = 5.0 to 35 dBm, Load VSWR = 10:1 all phase angles, 5 seconds, Adjust VD1G,D2G,D3G for specified power) Positive Voltage (Pin = 3.0 dBm, VD1B = VD2B = 3.0 V) -90 -90 No Degradation in Output Power Before and After Test VP 6 10 - V Frequency Range BW 1710 - 1785 MHz Output Power Pout 33 34 - dBm DCS SECTION (Pin = 5.0 dBm) Power Added Efficiency PAE 35 43 - % Output Power @ Low Voltage (VD1D,D2D,D3D= 3.0 V) Pout 31.5 32.4 - dBm - - -40 -35 -35 -30 Harmonic Output 2fo 3fo dBc Input Return Loss |S11| - 12 - dB Output Power Isolation with Buffer On (Pin = 5.0 dBm, VD1B,D2B = 3.6 V, VD1D,D2D,D3D = 0 V) Pon - -8.0 -2.0 dBm Output Power Isolation (Pin = 5.0 dBm, VD1B,D2B = 0 V, VD1D,D2D,D3D = 0 V) Poff - -36 - dBm Noise Power in Rx Band 1805 to 1880 MHz (100 kHz measurement bandwidth) NP - -85 -71 dBm VSS - - -4.85 V TS - 0.7 2.0 s Pspur - - -60 dBc Negative Voltage (Pin = 5.0 dBm, VD1B,D2B = 3.0 V) Negative Voltage Settling time (Pin = 5.0 dBm, VD1B,D2B stepped from 0 to 3.0 V) Stability-Spurious Output (Pout = 3.0 to 33 dBm, Load VSWR = 6:1 all Phase Angle, Source VSWR = 3:1, at any phase angle Adjust VD1D,D2D,D3D for specified power) MRFIC1859 2.2-88 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1859 ELECTRICAL CHARACTERISTICS (continued) (VD1B, D2B = 3.6 V, VD1G,D2G,D3G = 3.6 V or VD1D,D2D,D3D = 3.6 V, Peak measurement at 12.5% duty cycle, 4.6 ms period, TA = 25C, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit DCS SECTION (continued) (Pin = 5.0 dBm) Load Mismatch Stress (Pout = 3.0 to 33 dBm, Load VSWR = 10:1 all phase angles, 5 seconds, Adjust VD1D,D2D,D3D for specified power) Positive Voltage (Pin = 5.0 dBm, VD1B = VD2B = 3.0 V) No Degradation in Output Power Before and After Test VP 6 10 - V PIN FUNCTION DESCRIPTION Pin No. Symbol I/O Description Functionality 1 B23G I GSM Bias for 2nd and 3rd stage Bias pin of GSM second and third stages. Biasing circuit is made of an internal resistor connected to RF transistor gate, and in series with a current source, connected to VSS (Pin 32). An external resistor allows to tune biasing point for best gain (Class AB). To switch off GSM line-up, setting this pin (and Pin 18) to high impedance, which will apply VSS (-5.0 V) to the gates, i.e., a voltage two times lower than FET threshold voltage. 2 VP O Positive voltage A buffer amplifier is designed to produce the required negative voltage, based on RF signal amplification and rectification. Also a positive voltage is generated in the same way, with rectification and a voltage doubler. This voltage supplies an op amp in order to drive a NMOS as drain switch. Refer to application schematic, with MC33170 and MTSF3N02 (products of On Semiconductor). 3 Gnd 4,5,6,7,8 OutG 9 Ground O GSM output RF output and power supply for output GSM stage. Supply voltage is provided through those five pins. An external matching network is required to provide optimum load impedance. N.C. 10,11,12 D2G I GSM 2nd stage drain Power supply for GSM second stage, and inter-stage matching. Wire bonds and pins form the required inductor for optimum inter-matching tuning. Make note that decoupling capacitor on those pins needs to be placed as close as possible to the pins. Refer to application schematic for component value. 13 D1D I DCS 1st stage drain Power supply for DCS first stage, and inter-staging matching. This pin associated with a printed line (80 ) forms the required inductor for a proper match. 14 D1B I Buffer 1st stage drain Power supply for buffer amplifier first stage, and inter-staging matching. This pin, associated with a printed line (80 ) forms the required inductor for a proper match. 15 B1D I DCS 1st stage Bias Same function as Pin 18 for DCS amplifier. 16 InD I DCS RF Input RF input for DCS amplifier. A series inductor or line and a parallel inductor are required for a proper matching to 50 and maximum gain. See application circuit. 17 InG I GSM RF Input RF input for GSM amplifier. An inductor and a capacitor are required for a proper matching to 50 and maximum gain. See application circuit. 18 B1G I GSM 1st stage Bias Bias pin of GSM first stage and associated buffer stage. Biasing circuit is made of an internal resistor connected to RF transistor gate, and in series with a current source, connected to VSS (Pin 32). An external resistor allows to tune biasing point for best gain (Class AB). See comments on Pin 1. 19 D1G I GSM 1st stage drain Power supply for GSM first stage, and inter-stage matching. This pin, associated with a printed line (80 ) form the required inductor for a proper match. 20 G2D I DCS 2nd stage gate Access to DCS 2nd stage gate. A shunt capacitor connected to this pin contributes to the inter-stage matching between 1st and 2nd DCS stages. 21 VSC O Check for Negative voltage An opened drain transistor connected to this pin, with VSS as gate voltage, gives a checking signal for negative voltage generation. Used in application circuit to forbid on state to the NMOS Drain switch when VSS is not working. Prevents IC degradation when bias is not present. This pin is not used with MC33170 which has its own protection circuit. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1859 2.2-89 MRFIC1859 PIN FUNCTION DESCRIPTION (continued) Pin No. Symbol I/O Description 22,23 D2D I DCS 2nd stage drain 24 B23D I DCS Bias for 2nd and 3rd stage 25,26,27, 28,29 OutD O DCS RF Output RF output and power supply for output DCS stage. Supply voltage is provided through those five pins. An external matching network is required to provide optimum load impedance. 30 B2B I Buffer 2nd state Bias Like Pins 1, 15, and 18, this is a bias pin. Pin 30 is used to bias 2nd stage of buffer amplifier. 31 D2B I Buffer 2nd stage Drain Drain supply and matching of buffer amplifier to maximize VSS and VP voltages. 32 VSS O Negative Voltage A buffer amplifier is designed to produce the required negative voltage, based on RF signal amplification with a two stages wide band amplifier and rectification of the resulting signal. An external zener diode is used to regulate this voltage and provide to the gates a stabilized biasing voltage. VSS is also used to switch off the unused amplifier. Refer to Bias Pins 1, 18 and 15, 24. Exposed Pad Gnd I Main Gnd MRFIC1859 2.2-90 Functionality Power supply for DCS driver stage, and inter-staging matching. These pins form the required inductor for a proper match. Same as Pin 1 for DCS amplifier. The bottom pad of the TQFP-32EP package is used for electrical/RF grounding and thermal dissipation. The PCB pattern where it fits has to be tailored for good ground and thermal continuity (with many ground via holes). MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1859 Figure 1. Application Schematic Vbat C23 100 nF Vramp CE MTSF3N02* R8 10k MC33170* 1 Band Select BS 2 TxEN 3 BGSM 4 BDCS 5 VDB 6 Gnd 7 V bat Tx EN 14 CE VSS 13 12 Out 11 VP 10 InV 9 NinV LDO 8 S D S D S D G D R6 10k C20 N.C. R7 10k C19 100 nF C16 1.0 nF T5 1.5 mm R2** 6.8 k C9 47 pF T2 47 mm T3 22 mm 1.5 mm T6 1 24 2 23 3 22 4 C4 4.7 pF C3 12 pF 20 2.5 mm 6 19 T4 7 18 8 17 N.C. T1, T2, T3, T4 Zc = 50 T5, T6 Zc = 30 T7, T8, T9, T10 Zc = 80 Substrate FR4 Er = 4.5 C2, C3, C4 are high Q capacitors * Products of ON Semiconductor ** 1% tolerance C15 12 pF 9 10 11 12 13 14 15 16 C8 6.8 pF T9 11 mm C17 47 pF R5 12 k L1 15 nH C21 5.6 pF In GSM R4 8.2 k C14 47 pF C12 10 nF C13 12 pF T8 12 mm T1 6.0 mm T7 5.5 mm C5 47 pF R3** 5.6 k 21 MRFIC1859 5 Out GSM Exposed Pad (Gnd - on bottom) 32 31 30 29 28 27 26 25 N.C. C6 1.0 pF C10 22 pF R9 1.5 k C7 22 pF L3 56 nH Out DCS C2 3.9 pF C18 47 pF R1 2.2 k C11 3.3 pF C1 47 pF MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA T10 4.0 mm C22 47 pF In DCS L2 2.7 nH MRFIC1859 2.2-91 MRFIC1859 GSM TYPICAL CHARACTERISTICS Figure 3. Power Added Efficiency versus Frequency Figure 2. Output Power versus Frequency 38 55 37.5 54 37 Vbat = 4.2 V 52 36 3.6 V PAE (%) Pout (dBm) 3.6 V 53 36.5 35.5 35 34 33.5 890 895 3.0 V 50 48 TA = 25C Pin = 3.0 dBm 885 51 49 3.0 V 34.5 33 880 Vbat = 4.2 V 900 905 910 TA = 25C Pin = 3.0 dBm 47 46 880 915 885 905 Figure 5. Output Power versus Frequency TA = -35C 915 TA = -35C 36.5 Pout (dBm) 25C 34.5 34 85C 33.5 885 890 895 900 905 910 36 35.5 85C 35 Vbat = 3.0 V Pin = 3.0 dBm 34.5 880 915 Vbat = 3.6 V Pin = 3.0 dBm 885 890 895 900 905 910 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 6. Output Power versus Frequency Figure 7. Power Added Efficiency versus Frequency 38 915 58 37.5 TA = -35C 56 25C 54 PAE (%) 37 85C 36.5 TA = -35C 25C 52 85C 50 36 35.5 880 910 37 25C Pout (dBm) 900 Figure 4. Output Power versus Frequency 35 Pout (dBm) 895 f, FREQUENCEY (MHz) 35.5 33 880 890 f, FREQUENCY (MHz) Vbat = 4.2 V Pin = 3.0 dBm 885 890 895 900 f, FREQUENCY (MHz) MRFIC1859 2.2-92 905 910 Vbat = 3.6 V Pin = 3.0 dBm 48 915 46 880 885 890 895 900 905 910 915 f, FREQUENCY (MHz) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1859 GSM TYPICAL CHARACTERISTICS Figure 9. Third Harmonics versus Frequency Figure 8. Second Harmonics versus Frequency 46 67 44 66 TA = 25C 40 64 -35C H3 (dBc) H2 (dBc) TA = -35C 65 85C 42 38 36 25C 63 62 61 34 32 30 880 885 890 895 900 905 910 85C 60 Vbat = 3.6 V Pin = 3.0 dBm Vbat = 3.6 V Pin = 3.0 dBm 59 58 880 915 885 890 895 900 905 f, FREQUENCY (MHz) f, FREQUENCEY (MHz) Figure 10. Positive Voltage Generator Output versus Frequency Figure 11. Crosstalk versus Frequency 13 910 915 -22 -23 12 -24 XTALK (dBm) Vpos (V) TA = -35C 11 25C 10 85C 8.0 880 885 890 40 900 905 910 -30 880 915 890 3.0 85C 895 900 905 TOTAL CURRENT (A) 15 10 5.0 f = 897.5 MHz Vbat = 3.6 V Pin = 3.0 dBm 25C -5.0 1.0 1.5 910 915 2.5 20 0.5 885 Figure 13. Total Current versus Vramp 25 0 Vbat = 3.6 V Pin = 3.0 dBm -29 Figure 12. Output Power versus Vramp 30 -10 25C f, FREQUENCY (MHz) TA = -35C 0 -27 f, FREQUENCY (MHz) 35 Pout , OUTPUT POWER (dBm) 895 85C -26 -28 Vbat = 3.6 V Pin = 3.0 dBm 9.0 TA = -35C -25 2.0 TA = -35C 2.0 85C 25C 1.5 1.0 f = 897.5 MHz Vbat = 3.6 V Pin = 3.0 dBm 0.5 2.5 Vramp (V) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 0 0 0.5 1.0 1.5 2.0 2.5 Vramp (V) MRFIC1859 2.2-93 MRFIC1859 DCS TYPICAL CHARACTERISTICS Figure 15. Power Added Efficiency versus Frequency Figure 14. Output Power versus Frequency 47 35 Vbat = 4.2 V 34 3.6 V 46 3.6 V 33 32 1725 1740 1755 1770 40 1710 1785 1725 1740 1755 1770 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 16. Output Power versus Frequency Figure 17. Output Power versus Frequency 1785 35 34.5 TA = -35C 32.5 25C 32 31.5 Pout (dBm) Pout (dBm) TA = 25C Pin = 5.0 dBm 41 33 85C TA = -35C 34 25C 33.5 85C 33 31 Vbat = 3.0 V Pin = 5.0 dBm 30.5 1725 1740 1755 1770 Vbat = 3.6 V Pin = 5.0 dBm 32.5 32 1710 1785 1725 1740 1755 1770 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 18. Output Power versus Frequency Figure 19. Power Added Efficiency versus Frequency 36 1785 48 35.5 TA = -35C 46 TA = -35C 25C 44 25C 42 85C 35 PAE (%) Pout (dBm) 3.0 V 43 42 TA = 25C Pin = 5.0 dBm 33.5 30 1710 44 3.0 V 31 30 1710 Vbat = 4.2 V 45 PAE (%) Pout (dBm) 36 85C 34.5 40 34 33.5 1710 Vbat = 4.2 V Pin = 5.0 dBm 1725 1740 1755 f, FREQUENCY (MHz) MRFIC1859 2.2-94 1770 Vbat = 3.6 V Pin = 5.0 dBm 38 1785 36 1710 1725 1740 1755 1770 1785 f, FREQUENCY (MHz) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1859 DCS TYPICAL CHARACTERISTICS Figure 21. Third Harmonics versus Frequency Figure 20. Second Harmonics versus Frequency 49 46 47 45 25C 43 41 -35C 85C 37 34 39 31 Vbat = 3.6 V Pin = 5.0 dBm 37 35 1710 1725 1740 1755 Vbat = 3.6 V Pin = 5.0 dBm 28 1770 25 1710 1785 1725 1740 1755 1770 f, FREQUENCY (MHz) f, FREQUENCEY (MHz) Figure 22. Positive Voltage Generator Output versus Frequency Figure 23. Output Power versus Vramp 12 40 TA = -35C 10 25C 9.0 85C Vbat = 3.6 V Pin = 5.0 dBm 8.0 TA = -35C 30 85C 25 25C 20 15 10 f = 1747.5 MHz Vbat = 3.6 V Pin = 5.0 dBm 5.0 0 7.0 1710 1725 1740 1755 1770 -5.0 1785 1785 35 Pout , OUTPUT POWER (dBm) 11 Vpos (V) TA = -35C 40 85C H3 (dBc) H2 (dBc) 43 TA = 25C 0 0.5 1.0 f, FREQUENCY (MHz) 1.5 2.0 2.5 Vramp (V) Figure 24. Total Current versus Vramp 2.0 1.8 TOTAL CURRENT (A) 1.6 TA = -35C 1.4 85C 1.2 1.0 25C 0.8 0.6 f = 1747.5 MHz Vbat = 3.6 V Pin = 5.0 dBm 0.4 0.2 0 0 0.5 1.0 1.5 2.0 2.5 Vramp (V) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1859 2.2-95 MRFIC1859 APPLICATIONS INFORMATION Design Philosophy The MRFIC1859 is a dual-band single supply RF integrated power amplifier designed for use in GSM900/DCS1800 handheld radios under 3.6 V operation. With matching circuit modifications, it is also applicable for use in triple band GSM900/DCS1800/PCS1900 equipment. Typical performances in GSM/DCS at 3.6 V are: GSM: 35.8 dBm with 53% PAE and, DCS: 34 dBm with 43% PAE. It features a large band (900 to 1800 MHz) internal Negative Voltage Generator based on RF rectification of the input carrier after its amplification by two dedicated buffer stages (See Simplified Block Diagram). This method eliminates spurs found on the output signal when using dc/dc converter type negative voltage generators, either on or off chip. The buffer generates also a step-up positive voltage, which can be used to drive a NMOS drain switch. External Circuit Considerations The MRFIC1859 can be tuned by changing the values and/or positions of the appropriate external components (see Figure 1: Application Schematic). While tuning the RF line-up, it is recommended to apply external negative supply in order to prevent any damage to the power amplifier stages. Poor tuning on the input may not provide enough RF power to operate the negative voltage generator properly. Input matching is a shunt-C, series-L, low pass structure for GSM and a shunt-L, series-L high pass structure for DCS. It should be optimized at the rated input power (e.g. 3.0 dBm in GSM, 5.0 dBm in DCS). Since the input lines feed both 1st stages and 1st stage buffers, input matching should be iterated with buffer and Q1 drain matching. Note that dc blocking capacitors are included on chip. First stage buffer amplifier is tuned with a short 80 microstrip line which may be replaced by a chip inductor. Second stage buffer amplifier is supplied and matched through a discrete chip inductor. Those two elements are tuned to get the maximum output from voltage generator. The overall typical buffer current (DB1 + DB2) is about 60 mA in GSM and 100 mA in DCS. However, the negative generator needs a settling time of 1.0 s (see burst mode paragraph). During this transient period of time, both stages are biased to IDSS, which is about 200 mA each. The step-up positive voltage available at Pin 2, which is approximately 10 V in each band, can be used to drive a NMOS drain switch for best performances. Q1 drains are supplied and matched through 80 printed microstrip lines that could be replaced by discrete chip inductors as well. Their lengths (or equivalent inductor values) are tuned by sliding the RF decoupling capacitors along to get the maximum gain on the first stages. Q2 drains are supplied through 60 printed microstrip lines that contribute also to the interstage matching in order to optimum drive to the final stages. The line length for Q2G and Q2D is small, so replacing it with discrete inductors is not practical. Q3 stages are fed via 50 printed microstrip lines that must handle the high supply current of that stages (2.0 Amp peak) without significant voltage drop. This line can be buried in an inner layer to save PCB space or be a discrete RF choke. Output matching is accomplished in both bands with two stages low pass networks. Easy implementation is achieved MRFIC1859 2.2-96 with shunt capacitors mounted along a 50 microstrip transmission line. Value and position are chosen to reach a load line of 2.0 while conjugating the device output parasitics. The networks must also properly terminate the second and third harmonic level. Use of high-Q capacitors for the first output matching capacitor circuits is recommended in order to get the best output power and efficiency performances. Note: the choice of output matching capacitor type and supplier will affect H2 and H3 level and efficiency, because of series resonant frequency. Tuning Methodology The following section gives the user some guidelines and hints to tune and optimize the MRFIC1859 operation inside their own radio PCB. First of all, one must keep in mind that negative and positive voltage generation is based on RF carrier rectification. This means that RF input signal must always be present when running the part as a standalone solution. Therefore, in order to ease the tuning phase, it is recommended to apply the negative voltage externally in order to avoid any damage to the large RF MESFET transistors. This is particularly true if one uses the complete application with MC33170 (product of On Semiconductor) as control IC to do the optimization. In that case, both negative and positive voltage should be provided externally. The RF decoupling capacitors have been selected as 47 pF for GSM band (C17, C14, C22, C9. C1, and C8) and 22 pF or 12 pF for DCS band (C10, C15, and C13). But those can be optimized depending on their size and source, for example 12 pF were used at some places for DCS to provide better decoupling of the harmonics too, thus providing some extra performance. The recommended tuning procedure consists of several steps that need to be performed in sequential order. Several iterations can be performed if appropriate. Due to low interaction between line-ups, each band can be tuned independently. * Optimize the buffer operation using D1B (T8 line) and D2B matching (L3 inductor). Simultaneously, tune GSM or DCS input matching using L1, C21 or L2, T10, respectively. Check the margin on Pin to generate VSS and VP (those voltages should still meet their specification with a 5.0 dB reduction in Pin). A small shunt capacitor can be placed on VP to maximize that voltage. * Optimize RF line up linear gain using D1G, D2G matching (T9 line) or D1D, D2D, G2D matching (T7 line, C8) for GSM or DCS line-up, respectively. The goal is to maximize and center small signal gain. Pin has to be reduced for this exercise, hence the negative voltage needs to be applied externally. A broad band measurement is helpful to visualize the frequency response. Linear gain should peak at around 40 dB for GSM and 32 dB for DCS. The input matching has to be checked again and eventually refined during this step. * Optimize output matching using T4, C3, T1, C4 and T2 for GSM or T6, C2, T5, C6, T3 for DCS, respectively. Those elements set the Pout/PAE trade-off and harmonics rejection performance. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1859 * Finally, one can iterate some of the above steps to fine tune RF behavior and also to find the best configuration for Cross-Talk and Harmonics content reduction. For example, D2B inductor L3 and VSS decoupling capacitor C11 have a small influence on the GSM second harmonic leaking through the DCS output. The nominal impedance seen from the IPA package pins have been measured on the demoboard (after removing the MRFIC1859) and are listed in the following table. They can be taken as a starting point for the optimization. Also this gives the equivalent lumped element if one uses a lumped element instead of microstrip line. Impedance on the different GSM I/Os: (expressed in at 900 MHz) - - - - - - InG = 16.2 + j83.5 OutG = 1.9 - j2.3 D2G = close to 0 since decoupled as short as possible D1G = 1 + j19.8 (3.5 nH) D1B = 1.2 + j28.7 (5.0 nH) D2B = infinite since 56 nH behaves as choke Impedance on the different DCS I/Os: (expressed in at 1750 MHz) - - - - - - - InD = 12.5 + j36.5 OutD = 3.6 - j4.4 D2D = close to 0 since decoupled as short as possible G2D = 0.9 + j6.8 (0.64 nH) D1D = 1.1 + j20.8 (1.9 nH) D1B = 8.8 + j84.7 (7.6 nH) D2B = infinite since 56 nH behaves as choke One should note that except for RFin/RFout impedance, all others should be "in theory" pure reactive shunt elements. The fact that their resistive part is not zero is linked to the finite quality factor of the equivalent inductor and also to the limited accuracy of the measurement (when close to the Smith chart border). Control Considerations The MRFIC1859 application uses drain control technique developed for our generations of GaAs IPAs. This method relies on the fact that for an RF power amplifier operating in saturation mode, the RF output power is proportional to the square of the Amplifier drain voltage: Pout (Watt) = k * VD (V) * VD (V). A dedicated control IC MC33170 has been designed to manage all those control, biasing and band selection functions. When the emitting order is sent (TxEn = High), the MC33170 activates the power supply VDbuf of the negative voltage generator NVG (VDbuf = Vbat), involving the presence of Vneg as well as a positive VP of about 9.0 V. Once Vneg detected and regulated at -5.0 V, the MC33170 enables a N-channel MOSFET to be driven. The NMOS is used as a ballast transistor whose drain-source resistance is controlled by Vramp. This allows to supply the PA with a voltage from 0 V (Vramp = 0 V) to Vbat (Vramp = 2.0 V) and hence to control the output power. Such a way of control provides an excellent predictability of the RF output power (since the output voltage is proportional to the drain voltage) and eliminates the need for a power or current detection loop. The band selection is achieved by setting the BS pin of the MC33170 to 0 V (GSM) or 1.0 V (DCS), hence biasing the GSM or DCS transistors through BiasGSM and BiasDCS pins. Burst Mode In order to perform burst mode measurements, the following time can be used as a guideline. Figure 25. 2.0 V CE 0V 2.0 V TxEn (& Pin) 0V 10 s 2.0 V Vramp 0V 1.0 s - First the MC33170 must be awaken through CE to activate its Low Drop Out Regulator. The BS pin has also to be set according to the selected frequency band. - Then TxEn is set high which supply the buffer stages and activates the Negative and Positive Voltage Generation. TxEn signal can be used to switch the input power (using a driver or attenuator) in order to provide higher isolation for on/off burst dynamic. - Vramp (Pin 1) can be applied soon after TxEn since the internal negative voltage generator settles in less than 1.0 s. References (Motorola Application Notes) AN1599 - Power Control with the MRFIC0913 GaAs Integrated Power Amplifier and MC33169 Support IC. AN1697 - GSM900/DCS1800 Dual-Band 3.6 V Power Amplifier Solution with Open Loop Control Scheme. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1859 2.2-97 MRFIC1869 Product Preview Dual-Band GSM GPRS 3.6 V Integrated Power Amplifier The MRFIC1869 is a dual-band single supply RF Power Amplifier for GSM900/DCS1800 hand held radios. The device is packaged in a MLF-32 with exposed backside pad allowing excellent electrical and thermal performance through a solderable contact. * * * * * DUAL-BAND GSM GPRS 3.6 V IPA Single Supply Enhancement Mode pHEMT Technology SEMICONDUCTOR TECHNICAL DATA Internal Input Matching High Power and Efficiency Typical 3.6 V Characteristics: Pout = 35.8 dBm, PAE = 55% for GSM Pout = 34 dBm, PAE = 45% for DCS Tri-Band Capability1 PLASTIC PACKAGE CASE TBD (MLF-32, 5x5) Simplified Block Diagram VD1G VD2G VD3G InG OutG Vapc InD Device Operating Temperature Range Package MRFIC1869 TC = -35 to 100C MLF-32 VDBG Vreg VDBD BS VD1D ORDERING INFORMATION VD2D VD3D OutD 1. This product can be used in a tri-band application with a specific DCS1800/PCS1900 matching network. This matching network results in a degradation of Pout, PAE and input power as noted in the Electrical Characteristics table. MRFIC1869 2.2-98 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1869 PIN CONNECTIONS BS DBG N.C. 32 31 30 OutG OutG OutG OutG Gnd 29 28 27 26 25 Vreg 1 24 N.C. DBD 2 23 D2G N.C. 3 22 D2G Gnd 4 21 D2G OutD 5 20 N.C. OutD 6 19 D1G OutD 7 18 N.C. OutD 8 17 InG 9 10 11 12 13 14 15 16 N.C. D2D D2D D2D N.C. D1D Vapc InD MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1869 2.2-99 Product Preview MRFIC1884 Dual-Band CDMA Upconverter The MRFIC1884 is an integrated upmixer, RF AGC amplifier and driver amplifier designed for dual-band, tri-mode CDMA/AMPS/PCS CDMA cellular radios. The device incorporates a temperature compensated linear gain control and an active bias control that reduces supply current at lower output power. The design utilizes Motorola's RF BiCMOS process and is packaged in a small cost effective BCC32++ package. * * * DUAL-BAND CDMA UPCONVERTER SEMICONDUCTOR TECHNICAL DATA Designed for Dual-Band, Tri-Mode Operation Total Supply Current CDMA/PCS CDMA Mode = 60 mA (Typ) Total Supply Current AMPS Mode = 42 mA (Typ) High Output Power 6.0 dBm for CDMA 6.0 dBm for PCS CDMA 11 dBm for AMPS Supply Voltage Range: 2.7 to 3.2 V (Scale 2:1) PLASTIC PACKAGE CASE 1261A (BCC32++) ORDERING INFORMATION Device Operating Temp Range Package MRFIC1884R2 TA = -40 to 85C BCC32++ Simplified Block Diagram and Pin Connections VCC8 32 Band Gnd Exc In Cell Gnd 31 30 29 Mx Out Mx Out Cell- Cell+ 28 27 VCC7 26 Gnd 25 1 24 LO Cell 23 VCC6 22 IF In+ 21 IF In- 20 Vgc 19 Gnd 18 LO PCS 17 Gnd Cell Mixer Mode 2 Exc Out Cell/VCC1 3 Gnd 4 VCC2 5 Gnd 6 Exciter RF AGC Bandgap Temp Comp & Buffering Exciter Exc Out PCS/VCC3 7 Gnd 8 PCS Mixer RF AGC 9 Tx Enable MRFIC1884 2.2-100 10 11 12 13 VCC4 Gnd Exc In PCS Gnd 14 15 Mx Out Mx Out PCS- PCS+ 16 VCC5 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRFIC1884 PIN FUNCTION DESCRIPTION Pin Function Description Voltage On (V) Voltage Off (V) 1 Band Band Selection pin. A logic "High" (>2.4 V) selects PCS band and "Low" (<0.4 V) selects Cellular band. 2.4 to 3.2 0 to 0.4 2 Mode Mode selection pin. A logic "High" (>2.4 V) selects CDMA band and "Low" (<0.4 V) selects AMPS band. 2.4 to 3.2 0 to 0.4 3 Exciter Out (Cellular)/ VCC1 Cellular band RF Exciter output pin. 2.7 to 3.2 4 Gnd 5 VCC2 6 Gnd 7 Exciter Out (PCS)/ VCC3 8 Gnd 9 Tx Enable 10 VCC4 11 Gnd 12 Exciter In (PCS) 13 Gnd 14 Mixer Out- (PCS) PCS band Mixer RF output pin. 2.7 to 3.2 15 Mixer Out+ (PCS) PCS band Mixer RF output pin. 2.7 to 3.2 16 VCC5 Supply Voltage. 2.7 to 3.2 17 Gnd 18 LO (PCS) 19 Gnd Ground connection. 20 Vgc RF AGC control pin. A 30 dB dynamic range can be achieved by adjusting voltage from 0.1 V (low gain) to 1.7 V (high gain). 21 IF In- Mixer IF input pin. -23 dBm (Typ) 22 IF In+ Mixer IF input pin. -23 dBm (Typ) 23 VCC6 Supply Voltage. 24 LO (Cellular) 25 Gnd 26 VCC7 27 28 Ground connection. Supply Voltage. Ground connection. PCS band RF Exciter output pin. Ground connection. - 2.7 to 3.2 - 2.7 to 3.2 - Tx Enable pin. A logic "High" (>2.4 V) enables Tx path and "Low" (<0.4 V) diables Tx path except LO Buffer and bandgap reference (will disable the entire chip complete with Band selection pin and Mode selection pin, refer to Table ?). 2.4 to 3.2 Supply Voltage. 2.7 to 3.2 Ground connection. - PCS band RF Exciter input pin. - Ground connection. - Ground connection. PCS band Mixer LO input pin. Cellular band Mixer LO input pin. Ground connection. - -12 dBm (Typ) - 0.1 to 1.7 2.7 to 3.2 -13 dBm (Typ) - Supply Voltage. 2.7 to 3.2 Mixer Out+ (Cellular) Cellular band Mixer RF output pin. 2.7 to 3.2 Mixer Out- (Cellular) Cellular band Mixer RF output pin. 2.7 to 3.2 29 Gnd 30 Exciter In (Cellular) 31 Gnd 32 VCC8 Ground connection. - Cellular band RF Exciter input pin. - Ground connection. - Supply Voltage. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 0 to 0.4 2.7 to 3.2 MRFIC1884 2.2-101 DATA SHEETS 2.2-102 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Chapter Three RF/IF Subsystem ICs Section One . . . . . . . . . . . 3.1-0 RF/IF Subsystem ICs - Selector Guide Section Two . . . . . . . . . . . 3.2-0 RF/IF Subsystem ICs - Data Sheets MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 3.0-1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 3.0-2 Section One Selector Guide RF/IF Subsystems Table of Contents Cordless Phone Subsystems . . . . . . . . . . . . . . . . . . . . Tranceivers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Miscellaneous Functions . . . . . . . . . . . . . . . . . . . . . . . . ADCs/DACs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Encoders/Decoders . . . . . . . . . . . . . . . . . . . . . . . . . . Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Page 3.1-2 3.1-2 3.1-3 3.1-3 3.1-3 3.1-4 SELECTOR GUIDE 3.1-1 RF/IF Subsystems Cordless Phone Subsystem ICs Device ICC (Typ) VCC Dual Conversion Receiver Universal Dual PLL Compande r and Audio Interface CVSD Compatible Low Battery Detect Notes Suffix/ Case No. MC13110A 2.7 to 5.5 V Active Mode 8.5 mA Inactive Mode 15 A - CT-0 FB/848B FTA/932 MC13111A 2.7 to 5.5 V Active Mode 8.5 mA Inactive Mode 15 A - CT-0 FB/848B, FTA/932 MC13145 2.7 to 6.5 V Active Mode 27 mA Inactive Mode 10 A MC13146 2.7 to 6.5 V Active Mode 18 mA Inactive Mode 10 A - - - Receiver with coilless demod CT-900 FTA/932 - - - - Transmitter with VCO CT-900 FTA/977 GSM Receiver TDMA/iDEN Receiver Tranceivers Device MC13760(46a) VCC ICC 2.65 to 2.9 Transmit 20 mA Receive 30 mA 4.78 to 5.22 (Charge Pumps) Fractional-N Fractional N PLL Direct Launch La nch GSM Transmitter System Applicability Case No./ No / Pkg Type GSM/DCS, TDMA, iDEN, AMPS 1285/ BGA-104 (46)To be introduced: a) 1Q01; b) 2Q01; c) 3Q01 New Product SELECTOR GUIDE 3.1-2 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Miscellaneous Functions ADCs/DACs Device MC144110 Function I/O Format Resolution Number of Analog Channels DAC Serial 6 Bits 6 MC144111 On-Chip Oscillator - Other Features Emitter-Follower Outputs 4 Suffix/ Case No. DW/751D DW/751G Encoders/Decoders Device Function Number of Address Lines Maximum Number of Address Codes Number of Data Bits Operation Suffix/ Case No. MC145026 Encoder Depends on Decoder Depends on Decoder Depends on Decoder Simplex P/648, D/751B MC145027 Decoder 5 243 4 Simplex 9 19,683 0 Simplex P/648, DW/751G MC145028 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA SELECTOR GUIDE 3.1-3 RF/IF Subsystems Packages CASE 648 P SUFFIX (DIP-16) CASE 751B D SUFFIX (SO-16) CASE 751D DW SUFFIX (SO-20L) CASE 751G DW SUFFIX (SO-16W) CASE 848B FB SUFFIX (QFP-52) CASE 932 FTA SUFFIX (LQFP-48) CASE 977 FTA SUFFIX (LQFP-24) CASE 1285 (BGA-104) SELECTOR GUIDE 3.1-4 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Section Two RF/IF Subsystems - Data Sheets Device Number Page Number Device Number Page Number Cordless Phone Subsystems Miscellaneous Functions MC13110A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-16 ADCs/DACs MC13111A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-16 MC144110 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-257 MC13145 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-91 MC144111 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-257 MC13146 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-108 MC33411A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-216 Receivers MC3356 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-3 Encoders/Decoders MC145026 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-263 MC145027 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-263 MC145028 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-263 MC13135 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-79 MC13150 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-122 MC13156 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-154 MC13158 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-172 Transceivers MC13760 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-211 IF MC13055 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-9 MC13155 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-139 Transmitters MC13176 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.2-194 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA DATA SHEETS 3.2-1 DATA SHEETS 3.2-2 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Wideband FSK Receiver The MC3356 includes Oscillator, Mixer, Limiting IF Amplifier, Quadrature Detector, Audio Buffer, Squelch, Meter Drive, Squelch Status output, and Data Shaper comparator. The MC3356 is designed for use in digital data communciations equipment. * Data Rates up to 500 kilobaud * * * WIDEBAND FSK RECEIVER Excellent Sensitivity: - 3 dB Limiting Sensitivity Excellent Sensitivity: 30 Vrms @ 100 MHz Highly Versatile, Full Function Device, yet Few External Parts are Required Down Converter Can be Used Independently -- Similar to NE602 SEMICONDUCTOR TECHNICAL DATA P SUFFIX PLASTIC PACKAGE CASE 738 DW SUFFIX PLASTIC PACKAGE CASE 751D (SO-20L) Figure 1. Representative Block Diagram RF VCC PIN CONNECTIONS RF Ground 1 20 2 19 3 18 OSC 4 Mixer Data Shaping Comparator + 5 Ceramic Filter 6 7 - Ground Data Output VCC 16 15 Comparator - + Meter Current Limiter 17 RF Input 14 Squelch Status Hysteresis Buffer 8 13 9 12 10 11 Squelch Adjust (Meter) RF Ground 1 20 RF Input OSC Emitter 2 19 Ground OSC Collector 3 RF VCC 4 17 + Comparator Mixer Output 5 16 - Comparator IF VCC 6 14 Squelch Control Limiter Bias 8 13 Buffered Output Limiter Bias 9 12 Demodulator Filter Quad Bias 10 11 Quad Input ORDERING INFORMATION Device MC3356DW MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 15 Squelch Status Limiter Input 7 Quadrature Detector Tank VCC 18 Data Output MC3356P Operating Temperature Range TA = - 40 to +85C Package SO-20L Plastic DIP MC3356 3.2-3 NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS MC3356 MC3356 Rating NOT RECOMMENDED FOR NEW DESIGNS Power Supply Voltage Symbol Value Unit VCC(max) 15 Vdc Operating Power Supply Voltage Range (Pins 6, 10) VCC 3.0 to 9.0 Vdc RF VCC 3.0 to 12.0 Vdc Junction Temperature TJ 150 C Operating Ambient Temperature Range TA - 40 to + 85 C Storage Temperature Range Tstg - 65 to + 150 C Power Dissipation, Package Rating PD 1.25 W Operating RF Supply Voltage Range (Pin 4) ELECTRICAL CHARACTERISTICS (VCC = 5.0 Vdc, fo = 100 MHz, fosc = 110.7 MHz, f = 75 kHz, fmod = 1.0 kHz, 50 source, TA = 25C, test circuit of Figure 2, unless otherwise noted.) Characteristics Min Typ Max Unit Drain Current Total, RF VCC and VCC - 20 25 mAdc Input for - 3 dB limiting - 30 - Vrms - 60 - Vrms 2.5 - - Mixer Input Resistance, 100 MHz - 260 - Mixer Input Capacitance, 100 MHz - 5.0 - pF Mixer/Oscillator Frequency Range (Note 1) - 0.2 to 150 - MHz IF/Quadrature Detector Frequency Range (Note 1) - 0.2 to 50 - MHz AM Rejection (30% AM, RF Vin = 1.0 mVrms) - 50 - dB Demodulator Output, Pin 13 - 0.5 - Vrms Meter Drive - 7.0 - A/dB Squelch Threshold - 0.8 - Vdc Input for 50 dB quieting ( S+N N ) Mixer Voltage Gain, Pin 20 to Pin 5 NOTE: 1. Not taken in Test Circuit of Figure 2; new component values required. Figure 2. Test Circuit Squelch Status Demod Out Data Output 100 MHz RF Input 3.0 k 0.1 0.01 0.01 390 k 20 RF Input L1 - 110.7 MHz, 0.4 H L1 - 7T #22, 3/16 Form L1 - w/slug & can L2 - 10.7 MHz, 1.5 H L2 - 20T #30, 3/16 Form L2 - w/slug & can T1 - muRata T1 - SFE10.7 MA5-Z or KYOCERA T1 - KBF10.7MN-MA 3.3 k 18 k 10 k 51 19 18 Ground Data Output 3.3 k 17 Comp(+) 16 15 Comp(-) 14 Squelch Status Squelch Control 470 pF 18 k 13 12 11 Demod Out Demod Filter Quad Input 150 pF L2 RF Gnd OSC EM. OSC COL. 1 2 3 RF VCC 4 Mixer Out Limiter Input VCC 6 5 Limiter Bias 7 8 0.01 5.6 pF Limiter Bias 9 Quad Bias 10 0.01 330 15 pF VCC L1 330 MC3356 3.2-4 130 k 47 k 47 k T1 0.01 5 Vdc MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS MAXIMUM RATINGS MC3356 Figure 3. Output Components of Signal, Noise, and Distortion Figure 4. Meter Current versus Signal Input 700 METER CURRENT, PIN 14 (A) 0 RELATIVE OUTPUT (dB) NOT RECOMMENDED FOR NEW DESIGNS S+N+D fO = 100 MHz fm = 1.0 kHz f = 75 kHz -10 -20 -30 N+D -40 N -50 -60 0.01 0.1 1.0 600 500 400 300 200 100 0 0.010 10 0.1 INPUT (mVrms) 1.0 10 PIN 20 INPUT (mVrms) 100 1000 GENERAL DESCRIPTION This device is intended for single and double conversion VHF receiver systems, primarily for FSK data transmission up to 500 K baud (250 kHz). It contains an oscillator, mixer, limiting IF, quadrature detector, signal strength meter drive, and data shaping amplifier. The oscillator is a common base Colpitts type which can be crystal controlled, as shown in Figure 1, or L-C controlled as shown in the other figures. At higher VCC, it has been operated as high as 200 MHz. A mixer/oscillator voltage gain of 2 up to approximately 150 MHz, is readily achievable. The mixer functions well from an input signal of 10 Vrms, below which the squelch is unpredictable, up to about 10 mVrms, before any evidence of overload. Operation up to 1.0 Vrms input is permitted, but non-linearity of the meter output is incurred, and some oscillator pulling is suspected. The AM rejection above 10 mVrms is degraded. The limiting IF is a high frequency type, capable of being operated up to 50 MHz. It is expected to be used at 10.7 MHz in most cases, due to the availability of standard ceramic resonators. The quadrature detector is internally coupled to the IF, and a 5.0 pF quadrature capacitor is internally provided. The -3dB limiting sensitivity of the IF itself is approximately 50 V (at Pin 7), and the IF can accept signals up to 1.0 Vrms without distortion or change of detector quiescent dc level. The IF is unusual in that each of the last 5 stages of the 6 state limiter contains a signal strength sensitive, current sinking device. These are parallel connected and buffered to produce a signal strength meter drive which is fairly linear for IF input signals of 10 V to 100 mVrms (see Figure 4). A simple squelch arrangement is provided whereby the meter current flowing through the meter load resistance flips a comparator at about 0.8 Vdc above ground. The signal strength at which this occurs can be adjusted by changing the meter load resistor. The comparator (+) input and output are available to permit control of hysteresis. Good positive action can be obtained for IF input signals of above 30 Vrms. The 130 k resistor shown in the test circuit provides a small amount of hysteresis. Its connection between the 3.3 k resistor to ground and the 3.0 k pot, permits adjustment of squelch level without changing the amount of hysteresis. The squelch is internally connected to both the quadrature detector and the data shaper. The quadrature detector output, when squelched, goes to a dc level approximately equal to the zero signal level unsquelched. The squelch causes the data shaper to produce a high (VCC) output. The data shaper is a complete ``floating'' comparator, with back to back diodes across its inputs. The output of the quadrature detector can be fed directly to either input of this amplifier to produce an output that is either at VCC or VEE, depending upon the received frequency. The impedance of the biasing can be varied to produce an amplifier which "follows" frequency detuning to some degree, to prevent data pulse width changes. When the data shaper is driven directly from the demodulator output, Pin 13, there may be distortion at Pin 13 due to the diodes, but this is not important in the data application. A useful note in relating high/low input frequency to logic state: low IF frequency corresponds to low demodulator output. If the oscillator is above the incoming RF frequency, then high RF frequency will produce a logic low (input to (+) input of Data Shaper as shown in Figures 1 and 2). APPLICATION NOTES The MC3356 is a high frequency/high gain receiver that requires following certain layout techniques in designing a stable circuit configuration. The objective is to minimize or eliminate, if possible, any unwanted feedback. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC3356 3.2-5 NOT RECOMMENDED FOR NEW DESIGNS 10 MC3356 Figure 5. Application with Fixed Bias on Data Shaper NOT RECOMMENDED FOR NEW DESIGNS 5.0 V 0 V or 4.0 V 18 k 3.3 k 15 k 130 k RF In 1:2 10 k 0.01 3.0 k 390 k 20 19 18 RF Input Ground Data Output 470 pF 0.1 10 k 3.3 k 17 16 Comp(+) Comp(-) 15 Squelch Status 18 k 14 13 12 11 Squelch Control Demod Out Demod Filter Quad Input 150 pF MC3356 5.0 V RF Gnd OSC EM. 1 2 15 pF OSC COL. RF VCC 4 3 5.6 pF fO Mixer Out 5 0.01 4.0 V Limiter Bias 7 0.1 0.01 330 Limiter Bias 8 330 0.01 Bead + 5.0 to + 12 V Limiter Input VCC 6 9 Quad Bias 10 0.01 0.01 Bead 0.1 Cer. Fil. 10.7 MHz 180 82 APPLICATION NOTES (continued) Shielding, which includes the placement of input and output components, is important in minimizing electrostatic or electromagnetic coupling. The MC3356 has its pin connections such that the circuit designer can place the critical input and output circuits on opposite ends of the chip. Shielding is normally required for inductors in tuned circuits. The MC3356 has a separate VCC and ground for the RF and IF sections which allows good external circuit isolation by minimizing common ground paths. Note that the circuits of Figures 1 and 2 have RF, Oscillator, and IF circuits predominantly referenced to the plus supply rails. Figure 5, on the other hand, shows a suitable means of ground referencing. The two methods produce identical results when carefully executed. It is important to treat Pin 19 as a ground node for either approach. The RF input should be ``grounded'' to Pin 1 and then the input and the mixer/oscillator grounds (or RF VCC bypasses) should be connected by a low inductance path to Pin 19. IF and detector sections should also have their MC3356 3.2-6 bypasses returned by a separate path to Pin 19. VCC and RF VCC can be decoupled to minimize feedback, although the configuration of Figure 2 shows a successful implementation on a common 5.0 V supply. Once again, the message is: define a supply node and a ground node and return each section to those nodes by separate, low impedance paths. The test circuit of Figure 2 has a 3 dB limiting level of 30 V which can be lowered 6 db by a 1:2 untuned transformer at the input as shown in Figures 5 and 6. For applications that require additional sensitivity, an RF amplifier can be added, but with no greater than 20 db gain. This will give a 2.0 to 2.5 V sensitivity and any additional gain will reduce receiver dynamic range without improving its sensitivity. Although the test circuit operates at 5.0 V, the mixer/oscillator optimum performance is at 8.0 V to 12 V. A minimum of 8.0 V is recommended in high frequency applications (above 150 MHz), or in PLL applications where the oscillator drives a prescaler. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS Car. Det. Out Data Out MC3356 Data Out 5.0 V Car. Det. Out 0 V or 4.0 V 130 k 3.3 k 1 15 k 47 k RF In 47 k 10 k 0.01 3.3 k 1:2 470 k 20 19 18 RF Input Ground Data Output 470 pF 0.1 470 pF 17 Comp(+) 16 15 Comp(-) Squelch Status 18 k 0.1 14 Squelch Control 13 12 11 Demod Out Demod Filter Quad Input f = 10.7 150 pF 1.5 H APPLICATION NOTES (continued) Depending on the external circuit, inverted or noninverted data is available at Pin 18. Inverted data makes the higher frequency in the FSK signal a "one" when the local oscillator is above the incoming RF. Figure 5 schematic shows the comparator with hysteresis. In this circuit the dc reference voltage at Pin 17 is about the same as the demodulated output voltage (Pin 13) when no signal is present. This type circuit is preferred for systems where the data rates can drop to zero. Some systems have a low frequency limit on the data rate, such as systems using the MC3850 ACIA that has a start or stop bit. This defines the low frequency limit that can appear in the data stream. Figure 5 circuit can then be changed to a circuit configuration as shown in Figure 6. In Figure 6 the reference voltage for the comparator is derived from the demodulator output through a low pass circuit where is much lower than the lowest frequency data rate. This and similar circuits will compensate for small tuning changes (or drift) in the quadrature detector. Squelch status (Pin 15) goes high (squelch off) when the input signal becomes greater than some preset level set by the resistance between Pin 14 and ground. Hysteresis is added to the circuit externally by the resistance from Pin 14 to Pin 15. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC3356 3.2-7 NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS Figure 6. Application with Self-Adjusting Bias on Data Shaper NOT RECOMMENDED FOR NEW DESIGNS MC3356 3.2-8 Figure 7. Internal Schematic 4 5.0 k 5 1.0 k 3 3 2 20 k 10 k 500 2.0 k 2.0 k 2.0 k 2.0 k 5.0 k 18 65 4 5 1.0 k 6 7 71 73 8 76 10 k 77 75 78 80 79 85 94 72 2 93 1.0 k 20 10 9 20 k 86 20 k 92 91 15 69 1.0 k 11 89 67 66 14 84 70 90 87 83 68 82 81 5.0 k 12 5.0 k 5.0 k 330 330 10 k 20 pF 16 17 1 MC3356 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 11 6 35 1.0 k 1.0 k 1.0 k 1.0 k 1.0 k 1.0 k 1.0 k 1.0 k 10 1.0 k 1.0 k 1.0 k 1.0 k 1.0 k 1.0 k 1.0 k 36 26 38 31 7 13 14 15 16 17 18 19 20 21 23 22 39 37 25 32 33 34 5.0 pF 24 44 12 50 k 9 50 k 13 28 8 27 29 41 30 1.0 k 1.0 k 61 60 62 63 2.5 k 40 64 43 10 k 10 k 10 k 45 57 56 55 54 53 52 59 135 135 46 42 1.0 k 1.0 k 58 10 k 135 135 135 135 135 48 51 34 50 135 19 NOT RECOMMENDED FOR NEW DESIGNS 47 49 225 Wideband FSK Receiver The MC13055 is intended fo RF data link systems using carrier frequencies up to 40 MHz and FSK (frequency shift keying) data rates up to 2.0 M Baud (1.0 MHz). This design is similar to the MC3356, except that it does not include the oscillator/mixer. The IF bandwidth has been increased and the detector output has been revised to a balanced configuration. The received signal strength metering circuit has been retained, as has the versatile data slicer/comparator. * Input Sensitivity 20 V @ 40 MHz * * * WIDEBAND FSK RECEIVER SEMICONDUCTOR TECHNICAL DATA Signal Strength Indicator Linear Over 3 Decades Available in Surface Mount Package Easy Application, Few Peripheral Components P SUFFIX PLASTIC PACKAGE CASE 648 D SUFFIX PLASTIC PACKAGE CASE 751B (SO-16) PIN CONNECTIONS Figure 1. Block Diagram and Application Circuit VCC 0.01 16 1 + - 2 3 40MHz IF Input (50) 0.8V 0.01 4 22pF 27pF L1 0.1 5 6 15 14 13 100pF - + Data Output Carrier Detect 1 16 Comparator VCC 2 + 15 IF Ground 3 - 14 IF VCC 4 13 Carrier Detect Limiter Input 5 12 Meter Drive 5.0k 11 10 7 0.01 Comparator 6 11 7 10 8 9 Limiter Bias 12 Limiter Squelch Adjust (meter) Data Out Comparator Gnd Quad Bias Detector Out Quad Input 68pF 3.9k 9 8 VCC 1.0k ORDERING INFORMATION 3.9k 39pF Device MC13055D L2 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13055P Operating Temperature Range TA = - 40 to +85C Package SO-16 Plastic DIP MC13055 3.2-9 NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS MC13055 MC13055 Rating Symbol Value Unit VCC(max) 15 Vdc V2, V4 3.0 to 12 Vdc Junction Temperature TJ 150 C Operating Ambient Temperature Range TA -40 to +85 C Storage Temperature Range Tstg -65 to +150 C Power Dissipation, Package Rating PD 1.25 W Power Supply Voltage NOT RECOMMENDED FOR NEW DESIGNS Operating Supply Voltage Range ELECTRICAL CHARACTERISTICS (VCC = 5.0 Vdc, fo = 40 MHz, fmod = 1.0 MHz, f = 1.0 MHz, TA = 25C, test circuit of Figure 2.) Characteristic Total Drain Current Conditions Min Typ Max Unit 12 + 14 - 20 25 mA Data Comparator Pull-Down Current I16 - 10 - mA Meter Drive Slope versus Input I12 4.5 7.0 9.0 A/dB Carrier Detect Pull-Down Current I13 - 1.3 - mA Carrier Detect Pull-Up Current I13 - 500 - A Carrier Detect Threshold Voltage V12 690 800 1010 mV DC Output Current I10, I11 - 430 - A Recovered Signal V10 - V11 - 350 - mVrms VIN - 20 - Vrms V10 - V11 - 30 - dB Sensitivity for 20 dB S + N/N, BW = 5.0 MHz S + N/N at Vin = 50 V Input Impedance @ 40 MHz Rin Cin Pin 5, Ground - - 4.2 4.5 - - k pF Quadrature Coil Loading Rin Cin Pin 9 to 8 - - 7.6 5.2 - - k pF Figure 2. Test Circuit 1 16 2 15 0.01 VCC 3 100pF 14 0.01 4 22pF 13 5 Input 12 27pF L1 Carrier Detect Output Meter Drive 6 11 0.1 0.01 7 10 8 9 Detector Output 0.01 3.9k 3.9k 1.0k 39pF Coils - Shielded Coilcraft UNI-10/142 L1 Gray 8-1/2 Turns, nominal 300 nH L2 Black 10-1/2 Turns, nominal 380 nH L2 MC13055 3.2-10 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS MAXIMUM RATINGS MC13055 Figure 3. Overall Gain, Noise, AM Rejection Figure 4. Meter Current versus Signal -20 Noise -30 -40 AMR 1.0 kHz 30% -50 600 VCC = 5.0 V, 7.0 V 500 3.0 V 400 12 V 300 200 100 -60 -60 -40 SIGNAL INPUT (dBm) -20 0 -100 0 800 0 -10 0.1 Input -20 5 51 9 20k MC13055 7 -30 8 0.1 -40 -50 -60 -70 -80 0 10 20 30 40 50 60 70 f, INPUT FREQUENCY (MHz) 80 90 Input 0 dBm 600 -10 40 3 40.2 40.1 40.0 39.9 39.8 39.7 39.6 39.5 39.4 39.3 39.2 -50 -60 -70 Limiting Sensitivity -80 -90 l10 + l11, DETECTOR CURRENT ( Adc) 40 MHz Input -30 400 -40 300 -50 3.0 5.0 7.0 9.0 11 VCC, SUPPLY VOLTAGE (Vdc) 13 20k MC13055 7 -20 500 9 5 8 0.1 -60 200 -70 -80 10 20 30 40 50 60 70 f, INPUT FREQUENCY (MHz) 80 90 60 1200 1000 50 I10 + I11 40 800 600 30 I2 + I4 400 20 200 10 0 0 1.0 0 100 Figure 8. Detector Current and Power Supply Current versus Supply Voltage QUAD COIL TUNING (MHz) Figure 7. Limiting Sensitivity and Detuning versus Supply Voltage Quadrature Coil Tuning -20 51 0 0 100 0.1 700 100 -90 -100 -40 -60 -40 INPUT SIGNAL (dBm) Figure 6. Untuned Input: Meter Current versus Frequency l12, METER CURRENT ( Adc) VIN, INPUT LIMITING SENSITIVITY (dBm) Figure 5. Untuned Input: Limiting Sensitivity versus Frequency -80 15 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 0 1.0 3.0 5.0 7.0 9.0 11 VCC, SUPPLY VOLTAGE (Vdc) 13 0 15 l2 + I4, POWER SUPPLY CURRENT (mA) -80 -100 MC13055 3.2-11 NOT RECOMMENDED FOR NEW DESIGNS l12, METER CURRENT ( A) RELATIVE OUTPUT (dB) Output fmod = 1.0 MHz f = 1.0 MHz -10 VIN, INPUT LIMITING SENSITIVITY (dBm) NOT RECOMMENDED FOR NEW DESIGNS 0 MC13055 Figure 10. Carrier Detect Threshold versus Temperature 2.0 0 -2.0 -4.0 -6.0 -8.0 -10 -12 -40 -20 0 20 40 60 80 100 TA, AMBIENT TEMPERATURE (C) 120 1000 140 900 800 700 600 500 -60 Figure 11. Meter Current versus Temperature VIN, INPUT LIMITING SENSITIVITY (dBm) Input 0 dBm -10 -20 -30 400 -40 300 -50 200 100 -60 -40 -60 -20 0 20 40 60 80 100 TA, AMBIENT TEMPERATURE (C) 120 -20 0 20 40 60 80 100 TA, AMBIENT TEMPERATURE (C) 120 140 Figure 12. Input Limiting versus Temperature 600 500 -40 140 -50 -60 -70 -80 -90 -60 -40 -20 0 20 40 60 80 100 120 TA, AMBIENT TEMPERATURE (C) 140 Figure 13. Input Impedance, Pin 5 1.0 Cp = 4p5 0.5 Rp = 4k2 Y = 0.24 + j1.1 5.0 0.2 0 0.2 0.5 1.0 2.0 1.0M 200M 10M 0.2 5.0 100M 50M 20M 30M 2.0 0.5 1.0 MC13055 3.2-12 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS V12, CARRIER DETECT THRESHOLD (mV) V10, RELATIVE AUDIO OUTPUT (dB) 4.0 -60 l12, METER CURRENT ( A) NOT RECOMMENDED FOR NEW DESIGNS Figure 9. Recovered Audio versus Temperature MC13055 NOT RECOMMENDED FOR NEW DESIGNS .1 100P 4I .01 3.9K 27P .01 .3 H 3.9K .01 BNC 68P MC13055 22P .01 1K 5K POT 39P .4 H 4I (Circuit Side View) GND DATA OUT VCC CARRIER DETECT INPUT METER DRIVE 4I DETECTOR OUTPUT NOT RECOMMENDED FOR NEW DESIGNS Figure 14. Test Fixture (Component Layout) SQUELCH CONTROL MC13055 4I MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13055 3.2-13 NOT RECOMMENDED FOR NEW DESIGNS MC13055 3.2-14 Figure 15. Internal Schematic 2 Figure 15. d 71 73 72 12 66 77 86 70 94 92 92 89 83 16 78 79 85 13 69 67 80 76 74 91 14 90 87 84 68 82 81 1 9 4 MC13055 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 15 8 35 46 65 36 25 13 14 15 16 17 18 19 20 21 22 23 24 5 37 26 B B 31 25 26 6 7 32 33 34 10 27 60 61 62 63 29 64 45 59 58 57 56 55 54 52 39 38 30 48 11 28 53 47 51 49 50 3 NOT RECOMMENDED FOR NEW DESIGNS MC13055 The MC13055 is an extended frequency range FM IF, quadrature detector, signal strength detector and data shaper. It is intended primarily for FSK data systems. The design is very similar to MC3356 except that the oscillator/mixer has been removed, and the frequency capability of the IF has been raised about 2:1. The detector output configuration has been changed to a balanced, open-collector type to permit symmetrical drive of the data shaper (comparator). Meter drive and squelch features have been retained. The limiting IF is a high frequency type, capable of being operated up to 100 MHz. It is expected to be used at 40 MHz in most cases. The quadrature detector is internally coupled to the IF, and a 2.0 pF quadrature capacitor is internally provided. The 20 dB quieting sensitivity is approximately 20 V, tuned input, and the IF can accept signals up to 220 mVrms without distortion or change of detector quiescent DC level. The IF is unusual in that each of the last 5 stages of the 6 stage limiter contains a signal strength sensitive, current sinking device. These are parallel connected and buffered to produce a signal strength meter drive which is fairly linear for IF input signals of 20 V to 20 mVrms (see Figure 4). A simple squelch arrangement is provided whereby the meter current flowing through the meter load resistance flips a comparator at about 0.8 Vdc above ground. The signal strength at which this occurs can be adjusted by changing the meter load resistor. The comparator (+) input and output are available to permit control of hysteresis. Good positive action can be obtained for IF input signals of above 20 Vrms. A resistor (R) from Pin 13 to Pin 12 will provide VCC/R of feedback current. This current can be correlated to an amount of signal strength hysteresis by using Figure 4. The squelch is internally connected to the data shaper. Squelch causes the data shaper to produce a high (VCC) output. The data shaper is a complete " floating" comparator, with diodes across its inputs. The outputs of the quadrature detector can be fed directly to either or preferably both inputs of the comparator to produce a squared output swinging from VCC to ground in inverted or noninverted form. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13055 3.2-15 NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS GENERAL DESCRIPTION MC13110A MC13111A Universal Cordless Telephone Subsystem IC The MC13110A and MC13111A integrates several of the functions required for a cordless telephone into a single integrated circuit. This significantly reduces component count, board space requirements, external adjustments, and lowers overall costs. It is designed for use in both the handset and the base. * Fully Programmable in all Power Modes * * * * * * * Dual Conversion FM Receiver - Complete Dual Conversion Receiver - Antenna Input to Audio Out 80 MHz Maximum Carrier Frequency - RSSI Output - Carrier Detect Output with Programmable Threshold - Comparator for Data Recovery - Operates with Either a Quad Coil or Ceramic Discriminator Compander - Expander Includes Mute, Digital Volume Control, Speaker Driver, Programmable Low Pass Filter, and Gain Block - Compressor Includes Mute, Programmable Low Pass Filter, Limiter, and Gain Block MC13110A only: Frequency Inversion Scrambler - Function Controlled via MPU Interface - Programmable Carrier Modulation Frequency Dual Universal Programmable PLL - Supports New 25 Channel U.S. Standard with No External Switches - Universal Design for Domestic and Foreign Cordless Telephone Standards - Digitally Controlled Via a Serial Interface Port - Receive Side Includes 1st LO VCO, Phase Detector, and 14-Bit Programmable Counter and 2nd LO with 12-Bit Counter - Transmit Section Contains Phase Detector and 14-Bit Counter - MPU Clock Outputs Eliminates Need for MPU Crystal Low Battery Detect - Provides Two Levels of Monitoring with Separate Outputs - Separate, Adjustable Trip Points 2.7 to 5.5 V Operation (15 A Current Consumption in Inactive Mode) UNIVERSAL NARROWBAND FM RECEIVER INTEGRATED CIRCUIT 52 1 FB SUFFIX PLASTIC PACKAGE CASE 848B (QFP-52) 48 1 FTA SUFFIX PLASTIC PACKAGE CASE 932 (LQFP-48) ORDERING INFORMATION Device Tested Operating Temperature Range QFP-52 MC13110AFB MC13110AFTA MC13111AFB Package TA = - 40 to 85C MC13111AFTA LQFP-48 QFP-52 LQFP-48 AN1575: Refer to this Application Note for a List of the "Worldwide Cordless Telephone Frequencies Simplified Block Diagram Rx In 2nd Mixer 1st Mixer 1st LO Rx PD Out Rx Phase Detector Tx PD Out Tx Phase Detector Tx Out = MC13110A Only MC13110A MC13111A 3.2-16 2nd LO Detector RSSI Rx PD In NOTE: Limiting IF Amplifier 2nd LO Scrambler P Serial Interface RSSI Carrier Detect Out Data Out Low Battery Detect Expander MPU Clock Out Low Battery Indicator Rx Out SPI Scrambler Compressor Tx In This device contains 8262 active transistors. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A PIN CONNECTIONS 1st Mix Rx Gain Adjust Rx Mute 2nd LO Speaker Mute 6 b Prog SC Clk Ctr 23 VCC Audio 22 DA In SC Filter Clock /2 Tx Mute ALC Mic Amp Data Amp P Serial Interface Clk 11 Data 9 TxVCO 8 15 DA Out 14 BD1 Out Carrier Detect Prog Clk Ctr Gnd PLL 7 Tx PD 6 PLL Vref 5 Tx Phase Detect Rx PD 4 Vag 3 LO2 Out 2 Rx Phase Detect 16 BD2 Out Low Battery Detect Ref1 14 b Prog Tx Ctr VB 52 LO2 In 1 Ref2 Reg 2.5 V 2nd LO 10.240 18 C Cap 17 Tx Out VB Vref /25 /4 /1 12 b Prog Ref Ctr Ref1 51 19 C In LPF Bypass 14 b Prog Rx Ctr 2nd LO 20 Amp Out Tx Gain Adjust 4.129 kHz Limiter Compressor C Cap 1st LO 21 Tx In Scrambler Modulating Clock LPF Scr Out 49 27 Q Coil Bypass /40 E In 48 28 Lim Out 29 VCC RF 24 Rx Audio In E Out 46 Ref 2 50 30 Lim C2 31 Lim C1 32 Lim In 4.129 kHz Expander Vol Control Ecap 47 AALPF CD Out 13 Speaker Amp LPF EN 10 SA In 45 25 Det Out LPF Gnd Audio 43 26 RSSI RSSI Scrambler 1st LO VcapCtrl 42 SA Out 44 Detector 2nd LO 1st LO VCO LO1Out 41 IF Amp/ Limiter 2nd Mix Clk Out 12 LO1In 40 33 SGnd RF 34 Mix2 In 35 Mix2 Out 36 Gnd RF 39 Mix1 In1 38 Mix1 In2 37 Mix1 Out QFP-52 NOTE: 1st Mix Rx Gain Adjust Rx Mute 2nd LO SA Out 41 6 b Prog SC Clk Ctr LPF 22 Rx Audio In Bypass 21 VCC Audio Limiter Compressor C Cap 14 b Prog Rx Ctr 1st LO P Serial Interface 14 BD Out Programmable Low Battery Detect Tx Phase Detect Data Amp EN 9 Data 8 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 13 DA Out Carrier Detect Prog Clk Ctr TxVCO 7 Gnd PLL 6 Vag 2 LO2Out 1 16 C Cap VCC Audio 14 b Prog Tx Ctr Rx Phase Detect 17 C In LPF Reg 2.5 V 2nd LO 10.240 18 Amp Out Tx Gain Adjust 15 Tx Out VB Vref Tx PD 5 12 b Prog Ref Ctr 19 Tx In Bypass /25 /4 /1 PLL Vref 4 2nd LO Rx PD 3 LO2In 48 4.129 kHz LPF Scr Out 46 VB 47 Tx Mute Mic Amp Scrambler Modulating Clock /40 ALC 20 DA In SC Filter Clock /2 E Out 43 E In 45 25 Lim Out 4.129 kHz Expander Vol Control AALPF CD Out 12 Speaker Amp Speaker Mute SA In 42 26 VCC RF 23 Det Out LPF Gnd Audio 40 Ecap 44 27 Lim C2 28 Lim C1 29 Lim In 30 RSSI Scrambler 1st LO VcapCtrl 39 24 Q Coil RSSI Clk Out 11 LO1Out 38 Detector 2nd LO 1st LO VCO = MC13110A Only IF Amp/ Limiter 2nd Mix Clk 10 LO1In 37 31 Mix2 In 32 Mix2 Out 33 Gnd RF 36 Mix1 In1 35 Mix1 In2 34 Mix1 Out LQFP-48 MC13110A MC13111A 3.2-17 MC13110A MC13111A MAXIMUM RATINGS AAAAAAAAAAAAAA AAAA AAAAA AAA AAAAAAAAAAAAAA AAAA AAAAA AAA AAAAAAAAAAAAAA AAAA AAAAA AAA Symbol Value Unit Power Supply Voltage Characteristic VCC - 0.5 to 6.0 Vdc Junction Temperature TJ - 65 to 150 C Maximum Power Dissipation, TA = 25C PD 70 mW NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. 2. Functional operation should be restricted to the limits in the Recommended Operating Conditions and Electrical Characteristics tables or Pin Descriptions section. 3. ESD data available upon request. RECOMMENDED OPERATING CONDITIONS Characteristic Symbol Min Typ Max Unit VCC 2.7 3.6 5.5 Vdc Operating Ambient Temperature TA -40 - 85 C Input Voltage Low (Data, Clk, EN) VIL - - 0.3 V Input Voltage High (Data, Clk, EN) VIH PLL Vref - 0.3 - - V Bandgap Reference Voltage VB - 1.5 - V Supply Voltage NOTE: 4. All limits are not necessarily functional concurrently. DC ELECTRICAL CHARACTERISTICS (VCC = 3.6 V, TA = 25C, unless otherwise specified, IP3 = 0; Test Circuit Figure 1.) Characteristic Static Current Active Mode Receive Mode Standby Mode Inactive Mode Current Increase When IP3 = 1 (Active and Receive Modes) MC13110A MC13111A 3.2-18 Symbol Figure Min Typ Max Unit 5.5 3.1 - - 8.5 4.1 465 15 10.5 5.3 560 30 mA mA A A - 1.4 1.8 mA 1 ACT ICC Rx ICC STD ICC INACT ICC IIP3 1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A ELECTRICAL CHARACTERISTICS (VCC = 3.6 V, VB = 1.5 V, TA = 25C, Active or Rx Mode, unless otherwise specified; Test Circuit Figure 1.) Figure Input Pin Measure Pin Min Typ Max - - 2.2 -100 - - Single-Ended, Matched Input, Generator Referred - - 0.4 -115 - - Differential, Matched Input, Generator Referred - - 0.4 -115 - - Characteristic Symbol Unit FM RECEIVER (fRF = 46.77 MHz [USA Ch 21], fdev = 3.0 kHz, fmod = 1.0 kHz, Vcap ctrl = 1.2 V) Input Sensitivity (for 12 dB SINAD at Det Out Using C-Message Weighting Filter) 50 Termination, Generator Referred 68, 69 Mix1 In1/In2 Det Out VSIN Vrms dBm First and Second Mixer Voltage Gain Total (Vin = 1.0 mVrms, with CF1 and CF2 Load) 1 Mix1 In1 or In2 Mix2 Out MXgainT 24 29 - dB Isolation of First Mixer Output and Second Mixer Input (Vin = 1.0 mVrms, with CFI Removed) - Mix1 In1 or In2 Mix2 In Mix-Iso - 60 - dB Total Harmonic Distortion (Vin = 3.16 mVrms) 1 Mix1 In1 or In2 Det Out THD - 1.4 2.0 % Recovered Audio (Vin = 3.16 mVrms) 1 Mix1 In1 or In2 Det Out AFO 80 112 150 mVrms AM Rejection Ratio (Vin = 3.16 mVrms, 30% AM, @ 1.0 kHz) 1 Mix1 In1 or In2 Det Out AMR 30 48 - dB Signal to Noise Ratio (Vin = 3.16 mVrms, No Modulation) - Mix1 In1 or In2 Det Out SNR - 48 - dB RPS1 CPS1 - - 1.6 3.7 - - RPD1 CPD1 - - 1.6 1.8 - - FIRST MIXER (No Modulation, fin = USA Ch21, 46.77 MHz, 50 Termination at Inputs) Input Impedance Single-Ended Differential Output Impedance Voltage Conversion Gain (Vin = 1.0 mVrms, with CF1 Filter as Load) 1.0 dB Voltage Compression Level (Input Referred) IP3 Bit Set to 0 IP3 Bit Set to 1 Third Order Intercept (Input Referred) [Note 5] IP3 Bit Set to 0 IP3 Bit Set to 1 -3.0 dB IF Bandwidth NOTE: - 16 16 Mix1 In1 or In2 Mix1 In1/In2 k pF 14 - Mix1 Out RP1 Out CP1 Out - - 300 3.7 - - pF 17, 18 Mix1 In1 or In2 Mix1 Out MXgain1 - 12 - dB Mix1 In1 or In2 Mix1 Out VO Mix1 1 dB - - 20 -21 - - - - 56 -12 - - - - 64 -11 - - - - 178 -2.0 - - - 13 - 19, 21 20, 21 19, 21 Mix1 In1 or In2 Mix1 Out TOImix1 20, 21 22 Mix1 In1 or In2 Mix1 Out Mix1 BW mVrms dBm mVrms dBm MHz 5. Third order intercept calculated for input levels 10 dB below 1.0 dB compression point. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A 3.2-19 MC13110A MC13111A ELECTRICAL CHARACTERISTICS (continued) (VCC = 3.6 V, VB = 1.5 V, TA = 25C, Active or Rx Mode, unless otherwise specified; Test Circuit Figure 1.) Characteristic Figure Input Pin Measure Pin Symbol Min Typ Max Unit SECOND MIXER (No Modulation, fin = 10.7 MHz, 50 Termination at Inputs) Input Impedance 24 Mix2 In Mix2 In RP2 In CP2 In - - 2.8 3.6 - - k pF Output Impedance 24 - Mix2 Out RP2 Out CP2 Out - - 1.5 6.1 - - k pF 26, 27 Mix2 In Mix2 Out MXgain2 - 20 - dB Mix2 In Mix2 Out VO Mix2 1 dB - - 32 -17 - - - - 45 -14 - - 28, 30 - - 136 -4.3 - - 29, 30 - - 158 -3.0 - - Voltage Conversion Gain (Vin = 1.0 mVrms, with CF2 Filter as Load) 1.0 dB Voltage Compression Level (Input Referred) IP3 Bit Set 0 IP3 Bit Set 1 Third Order Intercept (Input Referred) [Note 6] IP3 Bit Set 0 IP3 Bit Set 1 -3.0 dB IF Bandwidth 28, 30 29, 30 Mix2 In 31 Mix2 In Mix2 Out TOImix2 mVrms dBm mVrms dBm Mix2 Out Mix2 BW - 2.5 - MHz LIMITER/DEMODULATOR (fin = 455 kHz, fdev = 3.0 kHz, fmod = 1.0 kHz) Input Impedance 49 Lim In Lim In RPLim CPLim - - 1.5 16 - - k pF Detector Output Impedance - - Det Out RO - 1.1 - k IF - 3.0 dB Limiting Sensitivity 1 Lim In Det Out IF Sens - 71 100 Vrms Demodulator Bandwidth - Lim In Det Out BW - 20 - kHz RSSI Output Dynamic Range 56 Mix1 In RSSI RSSI - 80 - dB DC Voltage Range 56 Mix1 In RSSI DC RSSI - 0.2 to 1.5 - Vdc Carrier Detect Threshold CD Threshold Adjust = (10100) (Threshold Relative to Mix1 In Level) 57 Mix1 In CD Out VT - 15 - Vrms Hysteresis, CD = (10100) (Threshold Relative to Mix1 In Level) 57 Mix1 In CD Out Hys - 2.0 - dB Output High Voltage CD = (00000), RSSI = 0.2 V 1 RSSI CD Out VOH VCC - 0.1 3.6 - V Output Low Voltage CD = (11111), RSSI = 0.9 V 1 RSSI CD Out VOL - 0.02 0.4 V Carrier Detect Threshold Adjustment Range (Programmable through MPU Interface) 125 - - VT Range - -20 to 11 - dB Carrier Detect Threshold - Number of Programmable Levels 125 - - VTn - 32 - - RSSI/CARRIER DETECT (No Modulation) NOTE: 6. Third order intercept calculated for input levels 10 dB below 1.0 dB compression point. MC13110A MC13111A 3.2-20 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A ELECTRICAL CHARACTERISTICS (continued) (VCC = 3.6 V, VB = 1.5 V, TA = 25C, Active or Rx Mode, unless otherwise specified; Test Circuit Figure 1.) Characteristic Figure Input Pin Measure Pin Symbol Min Typ Max Unit -4.0 0 4.0 dB Rx AUDIO PATH (fin = 1.0 kHz, Active Mode, scrambler bypassed) Absolute Gain (Vin = - 20 dBV) 1, 72 Rx Audio In SA Out G Gain Tracking (Referenced to E Out for Vin = -20 dBV) Vin = - 30 dBV Vin = - 40 dBV 1, 76 E In E Out Gt Total Harmonic Distortion (Vin = - 20 dBV) 1, 76 Rx Audio In SA Out Maximum Input Voltage (VCC = 2.7 V) 76 Rx Audio In Maximum Output Voltage (Increase input voltage until output voltage THD = 5.0%, then measure output voltage) 1 Input Impedance dB -21 -42 -20 -40 -19 -38 THD - 0.7 1.0 % - - - -11.5 - dBV E In E Out VOmax -2.0 0 - dBV - Rx Audio In E In - Zin - - 600 7.5 - - k Attack Time Ecap = 0.5 F, Rfilt = 40 k (See Appendix B) - E In E Out ta - 3.0 - ms Release Time Ecap = 0.5 F, Rfilt = 40 k (See Appendix B) - E In E Out tr - 13.5 - ms Compressor to Expander Crosstalk Vin = -10 dBV, V(E In) = AC Gnd 1 C In E Out CT - -90 -70 dB Rx Muting ( Gain) Vin = -20 dBV, Rx Gain Adj = (01111) 1 Rx Audio In E Out Me - -84 -60 dB Rx High Frequency Corner Rx Path, V Rx Audio In = -20 dBV 1 Rx Audio In Scr Out Rx fch 3.779 3.879 3.979 kHz Low Pass Filter Passband Ripple (Vin = -20 dBV) 1, 73 Rx Audio In Scr Out Ripple - 0.4 0.6 dB Rx Gain Adjust Range (Programmable through MPU Interface) 124 Rx Audio In Scr Out Rx Range - -9.0 to 10 - dB Rx Gain Adjust Steps - Number of Programmable Levels 124 Rx Audio In Scr Out Rx n - 20 - dB Audio Path Noise, C-Message Weighting (Input AC-Grounded) 70 Rx Audio In Scr Out E Out SA Out EN - - -85 <-95 <-95 - - dBV Volume Control Adjust Range 122 E In E Out VcnRange - -14 to 16 - dB Volume Control - Number of Programmable Levels 122 E In E Out Vcn - 16 - - Maximum Output Swing RL = No Load, Vin = 3.4 Vpp RL = 130 , Vin = 2.8 Vpp RL = 620 , Vin = 4.0 Vpp 1, 79 SA In SA Out VOmax 2.8 2.0 - 3.2 2.6 3.4 - - - Speaker Amp Muting Vin = -20 dBV, RL = 130 1 - -92 -60 SPEAKER AMP/SP MUTE (Active Mode) SA In SA Out MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Msp Vpp dB MC13110A MC13111A 3.2-21 MC13110A MC13111A ELECTRICAL CHARACTERISTICS (continued) (VCC = 3.6 V, VB = 1.5 V, TA = 25C, Active or Rx Mode, unless otherwise specified; Test Circuit Figure 1.) Figure Input Pin Measure Pin Symbol Min Typ Max Unit Hysteresis 1 DA In DA Out Hys 30 42 50 mV Threshold Voltage - DA In DA Out VT - VCC - 0.7 - V Input Impedance 1 - DA In ZI 200 250 280 k Output Impedance - - DA Out ZO - 100 - k Output High Voltage Vin = VCC - 1.0 V, IOH = 0 mA 1 DA In DA Out VOH VCC - 0.1 3.6 - V Output Low Voltage Vin = VCC - 0.4 V, IOL = 0 mA 1 DA In DA Out VOL - 0.1 0.4 V Maximum Frequency - DA In DA Out Fmax - 10 - kHz Characteristic DATA AMP COMPARATOR MIC AMP (fin = 1.0 kHz, External resistors set to gain of 1, Active Mode) Open Loop Gain - Tx In Amp Out AVOL - 100,000 - V/V Gain Bandwidth - Tx In Amp Out GBW - 100 - kHz Maximum Output Swing (RL = 10 k) - Tx In Amp Out VOmax - 3.2 - Vpp Tx AUDIO PATH (fin = 1.0 kHz, Tx Gain Adj = (01111); ALC, Limiter, and Mutes Disabled; Active Mode, scrambler bypassed) Absolute Gain (Vin = -10 dBV) 1, 83 Tx In Tx Out G -4.0 0 4.0 Gain Tracking (Referenced to Tx Out for Vin = -10 dBV) Vin = - 30 dBV Vin = - 40 dBV 1, 87 Tx In Tx Out Total Harmonic Distortion (Vin = - 10 dBV) 1, 87 Tx In Tx Out Maximum Output Voltage (Increase input voltage until output voltage THD = 5.0%, then measure output voltage. Tx Gain Adjust = 8 dB) 1 Tx In Input Impedance - Attack Time (Ccap = 0.5 F, Rfilt = 40 k (See Appendix B)) Gt dB dB -11 -17 -10 -15 -9.0 -13 THD - 0.8 1.8 % Tx Out VOmax -2.0 0 - dBV - C In Zin - 10 - k - C In Tx Out ta - 3.0 - ms Release Time (Ccap = 0.5 F, Rfilt = 40 k (See Appendix B)) - C In Tx Out tr - 13.5 - ms Expander to Compressor Crosstalk (Vin = -20 dBV, Speaker Amp No Load, V(C In) = AC Gnd) 1 E In Tx Out CT - -60 -40 dB Tx Muting (Vin - 10 dBV) 1 Tx In Tx Out Mc - -88 -60 dB 1, 87, 90 Tx In Tx Out ALCout -15 -13 -13 -11 -8.0 -6.0 ALC Slope (ALC enabled) Vin = -10 dBv Vin = -2.5 dBv 1 Tx In Tx Out Slope 0.1 0.25 0.4 dB/dB ALC Input Dynamic Range - C In Tx Out DR - -16 to -2.5 - dBV Limiter Output Level (Vin = - 2.5 dBV, Limiter enabled) 1 Tx In Tx Out Vlim -10 -8.0 - dBV Tx High Frequency Corner [Note 7] (VTx In = -10 dBV, Mic Amp = Unity Gain) 1 Tx In Tx Out Tx fc 3.6 3.7 3.8 kHz ALC Output Level (ALC enabled) Vin = -10 dBV Vin = -2.5 dBV NOTE: dBV 7. The filter specification is based on a 10.24 MHz 2nd LO, and a switched-capacitor (SC) filter counter divider ratio of 31. If other 2nd LO frequencies and/or SC filter counter divider ratios are used, the filter corner frequency will be proportional to the resulting SC filter clock frequency. MC13110A MC13111A 3.2-22 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A ELECTRICAL CHARACTERISTICS (continued) (VCC = 3.6 V, VB = 1.5 V, TA = 25C, Active or Rx Mode, unless otherwise specified; Test Circuit Figure 1.) Characteristic Figure Input Pin Measure Pin Symbol Min Typ Max Unit Tx AUDIO PATH (fin = 1.0 kHz, Tx Gain Adj = (01111); ALC, Limiter, and Mutes Disabled; Active Mode, scrambler bypassed) Low Pass Filter Passband Ripple (Vin = -10 dBV) 1, 84 Tx In Tx Out Ripple - 0.7 1.2 dB Maximum Compressor Gain (Vin = -70 dBV) - C In Tx Out AVmax - 23 - dB Tx Gain Adjust Range (Programmable through MPU Interface) 124 C In Tx Out Tx Range - -9.0 to 10 - dB Tx Gain Adjust Steps - Number of Programmable Levels 124 C In Tx Out Tx n - 20 - - Rx AND Tx SCRAMBLER (2nd LO = 10.24 MHz, Tx Gain Adj = (01111), Rx Gain Adj = (01111), Volume Control = (0 dB Default Levels), SCF Clock Divider = 31. Total is divide by 62 for SCF clock frequency of 165.16 kHz) Rx High Frequency Corner (Note 8) Rx Path, f = 479 Hz, V Rx Audio In = -20 dBV - Rx Audio In Scr Out Rx fch 3.55 3.65 3.75 kHz Tx High Frequency Corner (Note 8) Tx Path, f = 300 Hz, V Tx In = -10 dBV, Mic Amp = Unity Gain - Tx In Tx Out Tx fch 3.829 3.879 3.929 kHz - - Rx Audio In Tx In E Out Tx Out -4.0 -4.0 0.4 -1.0 4.0 4.0 - C In E Out Ripple - 1.9 2.5 dB fmod 4.119 4.129 4.139 kHz - - Rx Audio In C In E Out Tx Out - C In E Out GD - 1.0 - - C In E Out GD - 4.0 - Carrier Breakthrough Rx + Tx Path - 1.0 F from Tx Out to Rx Audio In - C In E Out CBT - -60 - dB Baseband Breakthrough Rx + Tx Path - 1.0 F from Tx Out to Rx Audio In, fin = 1.0 kHz, fmeas = 3.192 kHz - C In E Out BBT - -50 - dB 1, 130 Ref1 Ref2 BD1 Out BD2 Out VTi 1.38 1.48 1.58 V Average Threshold Voltage After Electronic Adjustment (Vref_Adj = (adjusted value)) 1 Ref1 Ref2 BD1 Out BD2 Out VTf 1.475 1.5 1.525 V Hysteresis - Ref1 Ref2 BD1 Out BD2 Out Hys - 4.0 - mV Input Current (Vin = 1.0 and 2.0 V) 1 - Ref1 Ref2 Iin -50 - 50 nA Output High Voltage (Vin = 2.0 V) 1 Ref1 Ref2 BD1 Out BD2 Out VOH VCC - 0.1 3.6 - V Absolute Gain Rx: Vin = -20 dBV Tx: Vin = -10 dBV, Limiter disabled Pass Band Ripple Rx + Tx Path - 1.0 F from Tx Out to Rx Audio In, fin = low corner frequency to high corner frequency Scrambler Modulation Frequency Rx: 100 mV (-20 dBV) Tx: 316 mV (-10 dBV) Group Delay Rx + Tx Path - 1.0 F from Tx Out to Rx Audio In, fin = 1.0 kHz fin = low corner frequency to high corner frequency AV dB ms LOW BATTERY DETECT Average Threshold Voltage Before Electronic Adjustment (Vref_Adj = (0111)) NOTE: 8. The filter specification is based on a 10.24 MHz 2nd LO, and a switch-capacitor (SC) filter counter divider ratio of 31. If other 2nd LO frequencies and/or SC filter counter divider ratios are used, the filter corner frequency will be proportional to the resulting SC filter clock frequency. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A 3.2-23 MC13110A MC13111A ELECTRICAL CHARACTERISTICS (continued) (VCC = 3.6 V, VB = 1.5 V, TA = 25C, Active or Rx Mode, unless otherwise specified; Test Circuit Figure 1.) Characteristic Input Pin Measure Pin 1 Ref1 Ref2 BD1 Out BD2 Out 1, 127 VCC Audio BD2 Out Figure Symbol Min Typ Max Unit VOL - 0.2 0.4 V IBS7 IBS6 IBS5 IBS4 IBS3 IBS2 IBS1 3.381 3.298 3.217 3.134 2.970 2.886 2.802 3.455 3.370 3.287 3.202 3.034 2.948 2.862 3.529 3.442 3.357 3.270 3.098 3.010 2.922 LOW BATTERY DETECT Output Low Voltage (Vin = 1.0 V) BATTERY DETECT INTERNAL THRESHOLD After Electronic Adjustment of VB Voltage BD Select = (111) BD Select = (110) BD Select = (101) BD Select = (100) BD Select = (011) BD Select = (010) BD Select = (001) V PLL PHASE DETECTOR Output Source Current (VPD = Gnd + 0.5 V to PLL Vref - 0.5 V) - - Rx PD Tx PD IOH - 1.0 - mA Output Sink Current (VPD = Gnd + 0.5 V to PLL Vref - 0.5 V) - - Rx PD Tx PD IOL - 1.0 - mA Maximum 2nd LO Frequency (No Crystal) - LO2 In - f2ext - 12 - MHz Maximum 2nd LO Frequency (With Crystal) - - LO2 In LO2 Out f2ext - 12 - MHz Maximum Tx VCO (Input Frequency), Vin = 200 mVpp - - Tx VCO ftxmax - 80 - MHz Regulated Output Level (IL = 0 mA, after Vref Adjustment) 1 - PLL Vref VO 2.4 2.5 2.6 V Line Regulation (IL = 0 mA, VCC = 3.0 to 5.5 V) 1 VCC Audio PLL Vref VRegLine - 11.8 40 mV Load Regulation (IL = 1.0 mA) 1 VCC Audio PLL Vref VReg Load -20 -1.4 - mV Input Current Low (Vin = 0.3 V, Standby Mode) 1 - Data, Clk, EN IIL -5.0 0.4 - A Input Current High (Vin = 3.3 V, Standby Mode) 1 - Data, Clk, EN IIH - 1.6 5.0 A Hysteresis Voltage - - Data, Clk, EN Vhys - 1.0 - V Maximum Clock Frequency - Data, EN, Clk - - - 2.0 - MHz Input Capacitance - Data, Clk, EN - Cin - 8.0 - pF EN to Clk Setup Time 106 - EN, Clk tsuEC - 200 - ns Data to Clk Setup Time 105 - Data, Clk tsuDC - 100 - ns Hold Time 105 - Data, Clk th - 90 - ns Recovery Time 106 - EN, Clk trec - 90 - ns - - EN, Clk tw - 100 - ns 108 - - tpuMPU - 100 - s PLL LOOP CHARACTERISTICS PLL VOLTAGE REGULATOR MICROPROCESSOR SERIAL INTERFACE Input Pulse Width MPU Interface Power-Up Delay (90% of PLL Vref to Data,Clk, EN) MC13110A MC13111A 3.2-24 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CF1 10.7 MHz 0.01 RF In 49.9 CF2 455 kHz To VCC 10 F 332 0.01 0.1 VCC 22.1 k 0.1 0.1 10 L2 Det Out 0.01 0.1 47 48 49 0.1 50 51 Scr Out Vref1 1.0 k 52 Q Coil Lim Out Lim C2 VCC RF Lim In Lim C1 Mix2 In SGnd RF Gnd RF Mix2 Out Mix 1Out Mix 1 In2 C Cap E In Tx Out Scr Out Ref2 BD 2 Out Ref1 DA Out VB 0.1 Vref2 C In 1.0 k 1 2 3 4 5 6 7 8 9 BD 1 Out CD Out E In E Cap Amp Out Clk Out 7.5 k VCCA E Out Clk 1.0 F 0.1 46 Tx In MC13110A MC13111A IC EN E Out SA In Tx VCO 45 Data 44 49.9 k DA In SA Out Gnd PLL 43 VCC Audio Tx PD 0.1 Rx Audio In Gnd Audio PLL Vref SA In V Cap Ctrl Rx PD 42 49.9 k RSSI Det Out LO1 Out Vag 41 SA Out LO1 In LO2 Out 40 110 Mix 1 In1 10 F 10 11 12 13 Rx Audio In 0.1 39 38 37 36 35 34 33 32 31 30 29 28 27 33 LO2 In L3 1000 15 k VCC Audio 26 10 F 25 0.1 DA In 24 23 0.1 49.9 k 22 49.9 k 21 19 C In 0.1 20 Tx In 0.1 Mic Amp Out 0.1 VCCA 18 17 Tx Out 1.0F V 100 k CC 16 BD2 Out Data Out BD1 Out 15 14 100 k 7.5 k VCC 0.1 100 k 0.01 1.0 F MC13110A MC13111A 3.2-25 Carrier Detect Out Tx VCO 22.1 k 4700 10.240 MHz 1.5 k 32.4 k 0.1 Rx Loop Filter 0.047 3.01 k 5.0 - 50 0.1 MPU Clock Output 8.2 10 F 0.1 NOTE: This schematic is only a partial representation of the actual production test circuit. Legend: If 1, then capacitor value = pF If <1, then capacitor value = F MC13110A MC13111A MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Figure 1. Production Test Circuit (52 Pin QFP) MC13110A MC13111A AAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAAA AAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAAA AAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA PIN FUNCTION DESCRIPTION Pin LQFP-48 QFP-52 Symbol/ Type 48 1 1 2 LO2 In LO2 Out Equivalent Internal Circuit (52 Pin QFP) These pins form the PLL reference oscillator when connected to an external parallel-resonant crystal (10.24 MHz typical). The reference oscillator is also the second Local Oscillator (LO2) for the RF receiver. "LO2 In" may also serve as an input for an externally generated reference signal which is typically ac-coupled. PLL Vref 100 1 PLL Vref PLL Vref LO2 In 100 2 LO2 Out 2 3 Vag VCC Audio Description When the IC is set to the inactive mode, LO2 In is internally pulled low to disable the oscillator. The input capacitance to ground at each pin (LO2 In/ LO2 Out) is 3.0 pF. Vag is the internal reference voltage for the switched capacitor filter section. This pin must be decoupled with a 0.1 F capacitor. PLL Vref 3 Vag 30 k 3 4 Rx PD (Output) PLL Vref PLL Vref 4, 6 1 15 5 6 Tx PD (Output) 4 5 PLL Vref Rx PD, Tx PD PLL Vref is a PLL voltage regulator output pin. An internal voltage regulator provides a stable power supply voltage for the Rx and Tx PLL's and can also be used as a regulated supply voltage for other IC's. It can source up to 1.0 mA externally. Proper supply filtering is a must on this pin. PLL Vref is pulled up to VCC audio for the standby and inactive modes (Note 1). VCC Audio 5 PLL Vref This pin is a tri-state voltage output of the Rx and Tx Phase Detector. It is either "high", "low", or "high impedance," depending on the phase difference of the phase detector input signals. During lock, very ulses with a frequency equal to the narrow pulses reference frequency are present. This pin drives the external Rx and Tx PLL loop filters. Rx and Tx PD outputs can sink or source 1.0 mA. 132 k 6 7 Gnd PLL Ground pin for digital PLL section of IC. 7 8 Tx VCO (Input) Tx VCO is the transmit divide counter input which is driven by an ac-coupled external transmit loop VCO. The minimum signal level is 200 mVpp @ 60.0 MHz. This pin also functions as the test mode input for the counter tests. PLL Vref 8 PLL Vref 1.0 k TX VCO MC13110A MC13111A 3.2-26 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA MC13110A MC13111A PIN FUNCTION DESCRIPTION (continued) Pin LQFP-48 QFP-52 8 9 10 9 10 11 Symbol/ Type Equivalent Internal Circuit (52 Pin QFP) Data EN Clk (Input) VCC Audio 240 9, 10, 11 Data, EN, Clk 11 12 PLL Vref 1.0 A Clk Out (Output) VCC Audio VCC Audio 12 1.0 k Clk Out 12 13 CD Out (I/O) Microprocessor serial interface input pins are for programming various counters and control functions. The switching thresholds are referenced to PLL Vref and Gnd PLL. The inputs operate up to VCC. These pins have 1.0 A internal pull-down currents. The microprocessor clock output is derived from the 2nd LO crystal oscillator and a programmable divider with divide ratios of 2 to 312.5. It can be used to drive a microprocessor and thereby reduce the number of crystals required in the system design. The driver has an internal resistor in series with the output which can be combined with an external capacitor to form a low pass filter to reduce radiated noise on the PCB. This output also functions as the output for the counter test modes. The Clk Out can be disabled via the MPU interface. Dual function pin; VCC Audio PLL Vref 240 13 Description 1) Carrier detect output (open collector with external 100 k pull-up resistor. Hardware Interrupt CD Out 2) Hardware interrupt input which can be used to "wake-up" from the Inactive Mode. CD Comparator - 14 BD1 Out 14 16 BD2 Out (Output) 13 15 DA Out (Output) Low battery detect output #1 is an open collector with external pull-up resistor. VCC Audio 1 16 14, 1 BD1 Out BD2 Out VCC Audio Low battery detect output #2 is an open collector with external pull-up resistor. Data amplifier output (open collector with internal 100 k pull-up resistor). VCC Audio 100 k 15 DA Out 15 17 Tx Out (Output) VCC Audio 17 Tx Out is the Tx path audio output. Internally this pin has a low-pass filter circuitry with -3 dB bandwidth of 4.0 kHz. Tx gain and mute are programmable through the MPU interface. This pin is sensitive to load capacitance. Tx Out VB MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A 3.2-27 AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAAA AAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA MC13110A MC13111A PIN FUNCTION DESCRIPTION (continued) Pin LQFP-48 QFP-52 Symbol/ Type 16 18 C Cap Equivalent Internal Circuit (52 Pin QFP) C Cap is the compressor rectifier filter capacitor pin. It is recommended that an external filter capacitor to VCC audio be used. A practical capacitor range is 0.1 to 1.0 F. 0.47 F is the recommended value. VCC Audio VCC Audio Description 40 k 18 C Cap 17 19 C In (Input) C In is the compressor input. This pin is internally biased and has an input impedance of 12.5 k. C In must be ac-coupled. VCC Audio 12.5 k 19 C In VB 18 20 Amp Out (Output) 19 21 Tx In (Input) Microphone amplifier output. The gain is set with external resistors. The feedback resistor should be less than 200 k. VCC Audio VCC Audio 21 20 Tx In Amp Out VB 20 22 VCC Audio DA In (Input) Tx In is the Tx path input to the microphone amplifier (Mic Amp). An external resistor is connected to this pin to set the Mic Amp gain and input impedance. Tx In must be ac-coupled, too. The data amplifier input (DA In) resistance is 250 k and must be ac-coupled. Hysteresis is internally provided. VCC Audio 250 k 250 k 22 DA In 21 23 VCC Audio 22 24 Rx Audio In (Input) VCC audio is the supply for the audio section. It is necessary to adequately filter this pin. The Rx audio input resistance is 600 k and must be ac-coupled. VCC Audio 600 k 24 Rx Audio In VB 23 25 Det Out (Output) 240 30 A MC13110A MC13111A 3.2-28 Det Out is the audio output from the FM detector. This pin is dc-coupled from the FM detector and has an output impedance of 1100 . VCC Audio VCC RF 25 Det Out MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAAA AAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAAA AAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAAA AAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA MC13110A MC13111A PIN FUNCTION DESCRIPTION (continued) Pin LQFP-48 QFP-52 Symbol/ Type 30 26 RSSI Equivalent Internal Circuit (52 Pin QFP) RSSI is the receive signal strength indicator. This pin must be filtered through a capacitor to ground. The capacitance value range should be 0.01 to 0.1 F. This is also the input to the Carrier Detect comparator. An external R to ground shifts the RSSI voltage. VCC RF VCC RF Description VCC Audio 26 RSSI 186 k 24 27 Q Coil VCC RF A quad coil or ceramic discriminator connects this pin as part of the FM demodulator circuit. DC-couple this pin to VCC RF through the quad coil or the external resistor. VCC RF 27 Q Coil 26 29 VCC RF VCC supply for RF receiver section (1st LO, mixer, limiter, demodulator). Proper supply filtering is needed on this pin too. 25 28 Lim Out A quad coil or ceramic discriminator are connected to these pins as part of the FM demodulator circuit. A coupling capacitor connects this pin to the quad coil or ceramic discriminator as part of the FM demodulator circuit. This pin can drive coupling capacitors up to 47 pF with no deterioration in performance. VCC VCC VCC RF RF RF 53.5 k VCC RF 31 27 28 30 31 Lim C2 Lim C1 28 LLim C1 32 Lim Out Lim In 1.5 k 30 522 k Lim C2 IF amplifier/limiter capacitor pins. These decoupling capacitors should be 0.1 F. They determine the IF limiter gain and low frequency bandwidth. 29 32 Lim In (Input) Signal input for IF amplifier/limiter. Signals should be ac-coupled to this pin. The input impedance is 1.5 k at 455 kHz. - 33 SGnd RF This pin is not connected internally but should be grounded to reduce potential coupling between pins. 31 34 Mix2 In (Input) VCC RF VCC RF 3.0 k 34 Mix2 In is the second mixer input. Signals are to be ac-coupled to this pin, which is biased internally to VCC RF. The input impedance is 2.8 k at 455 kHz. The input impedance can be reduced by connecting an external resistor to VCC RF. Mix2 In MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A 3.2-29 AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAAA AAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA MC13110A MC13111A PIN FUNCTION DESCRIPTION (continued) Pin LQFP-48 QFP-52 32 35 Symbol/ Type Equivalent Internal Circuit (52 Pin QFP) Mix2 Out (Output) VCC RF Description Mix2 Out is the second mixer output. The second mixer has a 3 dB bandwidth of 2.5 MHz and an output impedance of 1.5 k. The output current drive is 50 A. VCC RF 1.2 k 35 Mix2 Out 33 36 Gnd RF 34 37 Mix1 Out (Output) Ground pin for RF section of the IC. VCC RF The first mixer has a 3 dB IF bandwidth of 13 MHz and an output impedance of 300 . The output current drive is 300 A and can be programmed for 1.0 mA. VCC RF 200 37 Mix1 Out 35 38 Mix1 In2 (Input) 20 k VCC RF 9500 36 37 38 39 Mix1 In1 (Input) 40 41 VCC RF 9500 38, 39 Mix1 In2, Mix1 In1 LO1 In LO1 Out Tank Elements, an internal varactor and capacitor matrix for 1st LO multivibrator oscillator are connected to these pins. The oscillator is useable up to 80 MHz. 40 41 LO1 Out 39 Signals should be ac-coupled to this pin, which is biased internally to VCC - 1.6 V. The single-ended and differential input impedance are about 1.6 and 1.8 k at 46 MHz, respectively. Vref 42 LO1 In Vcap Ctrl VCC RF 55 k 42 Vcap Ctrl is the 1st LO varactor control pin. The voltage at this pin is referenced to Gnd Audio and varies the capacitance between LO1 In and LO2 Out. An increase in voltage will decrease capacitance. Vcap Ctrl 40 43 Gnd Audio 41 44 SA Out (Output) Ground for audio section of the IC. VCC Audio VCC Audio 45 44 42 45 SA In (Input) SA In SA Out VB MC13110A MC13111A 3.2-30 The speaker amplifier gain is set with an external feedback resistor. It should be less than 200 k. The speaker amplifier can be muted through the MPU interface. An external resistor is connected to the speaker amplifier input (SA In). This will set the gain and input impedance and must be ac-coupled. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAA AAAAA AAAAAAAAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA MC13110A MC13111A PIN FUNCTION DESCRIPTION (continued) Pin LQFP-48 QFP-52 43 46 Symbol/ Type Equivalent Internal Circuit (52 Pin QFP) E Out (Output) Description The output level of the expander output is determined by the volume control. Volume control is programmable through the MPU interface. VCC Audio 46 E Out VB 44 47 E Cap VCC Audio E Cap is the expander rectifier filter capacitor pin. Connect an external filter capacitor between VCC audio and E Cap. The recommended capacitance range is 0.1 to 1.0 F. 0.47 F is the suggested value. VCC Audio 40 k 47 E Cap 45 48 VCC Audio E In (Input) The expander input pin is internally biased and has input impedance of 30 k. 30 k 48 E In VB 46 49 Scr Out (Output) Scr Out is the Rx audio output. An internal low pass filter has a -3 dB bandwidth of 4.0 kHz. VCC Audio 49 Scr Out VB - 50 Ref2 - 51 Ref1 47 52 VB VCC Audio Reference voltage input for Low Battery Detect #2. 50, 51 Ref2, Ref1 Reference voltage input for Low Battery Detect #1. VCC Audio VCC Audio 240 52 VB NOTE: VB is the internal half supply analog ground reference. This pin must be filtered with a capacitor to ground. A typical capacitor range of 0.5 to 10 F is desired to reduce crosstalk and noise. It is important to keep this capacitor value equal to the PLL Vref capacitor due to logic timing (Note 9). 9. A capacitor range of 0.5 to 10 F is recommended. The capacitor value should be the same used on the VB pin (Pin 52). An additional high quality parallel capacitor of 0.01 F is essential to filter out spikes originating from the PLL logic circuitry. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A 3.2-31 MC13110A MC13111A DEVICE DESCRIPTION AND APPLICATION INFORMATION The following text, graphics, tables and schematics are provided to the user as a source of valuable technical information about the Universal Cordless Telephone IC. This information originates from thorough evaluation of the device performance for the US and French applications. This data was obtained by using units from typical wafer lots. It is important to note that the forgoing data and information was from a limited number of units. By no means is the user to assume that the data following is a guaranteed parametric. Only the minimum and maximum limits identified in the electrical characteristics tables found earlier in this spec are guaranteed. General Circuit Description The MC13110A and MC13111A are a low power dual conversion narrowband FM receiver designed for applications up to 80 MHz carrier frequency. This device is primarily designated to be used for the 49 MHz cordless phone (CT-0), but has other applications such as low data rate narrowband data links and as a backend device for 900 MHz systems where baseband analog processing is required. This device contains a first and second mixer, limiter, demodulator, extended range receive signal strength (RSSI), receive and transmit baseband processing, dual programmable PLL, low battery detect, and serial interface for microprocessor control. The FM receiver can also be used with either a quadrature coil or ceramic resonator. Refer to the Pin Function Description table for the simplified internal circuit schematic and description of this device. DC Current and Battery Detect Figures 3 through 6 are the current consumption for Inactive, Standby, Receive, and Active modes versus supply voltages. Figures 7 and 8 show the typical behavior of current consumption in relation to temperature. The relationship of additional current draw due to IP3 bit set to <1> and supply voltage are shown in Figures 9 and 10. For the Low Battery Detect, the user has the option to operate the IC in the programmable or non-programmable modes. Note that the 48 pin package can only be used in the programmable mode. Figure 127 describes this operation (refer to the Serial Interface section under Clock Divider Register). In the programmable mode several different internal threshold levels are available (Figure 2). The bits are set through the SCF Clock Divider Register as shown in Figures 108 and 125. The reference for the internal divider network is VCC Audio. The voltages on the internal divider network are compared to the Internal Reference Voltage, VB, generated by an internal source. Since the internal comparator used is non-inverting, a high at VCC Audio will yield a high at the MC13110A MC13111A 3.2-32 battery detect output, and vice versa for VCC Audio set to a low level. For the 52 pin package option, the Ref 1 and Ref 2 pins need to be tied to VCC when used in the programmable mode. It is essential to keep the external reference pins above Gnd to prevent any possible power-on reset to be activated. When considering the non-programmable mode (bits set to <000>) for the 52 pin package, the Ref 1 and Ref 2 pins become the comparators reference. An internal switch is activated when the non-programmable mode is chosen connecting Ref 1 and Ref 2. Here, two external precision resistor dividers are used to set independent thresholds for two battery detect hysteresis comparators. The voltages on Ref 1 and Ref 2 are again compared to the internally generated 1.5 V reference voltage (VB). The Low Battery Detect threshold tolerance can be improved by adjusting a trim-pot in the external resistor divider (user designed). The initial tolerance of the internal reference voltage (VB) is 6.0%. Alternately, the tolerance of the internal reference voltage can be improved to 1.5% through MPU serial interface programming (refer to the Serial Interface section, Figure 130). The internal reference can be measured directly at the "VB" pin. During final test of the telephone, the VB internal reference voltage is measured. Then, the internal reference voltage value is adjusted electronically through the MPU serial interface to achieve the desired accuracy level. The voltage reference register value should be stored in ROM during final test so that it can be reloaded each time the combo IC is powered up. The Low Battery Detect outputs are open collector. The battery detect levels will depend on the accuracy of the VB voltage. Figure 12 indicates that the VB voltage is fairly flat over temperature. AAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAA Figure 2. Internal Low Battery Detect Levels (with VB = 1.5 V) Battery Detect Select Ramping Up (V) Ramping Down (V) Average (V) Hysteresis (mV) 0 - - - - 1 2.867 2.861 2.864 4.0 2 2.953 2.947 2.950 6.0 3 3.039 3.031 3.035 8.0 4 3.207 3.199 3.204 8.0 5 3.291 3.285 3.288 6.0 6 3.375 3.367 3.371 8.0 AAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAA 7 3.461 3.453 3.457 8.0 NOTE: 10. Battery Detect Select 0 is the non-programmable operating mode. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A DC CURRENT Figure 4. Current versus Supply Voltage Standby Mode, MCU Clock Output - On at 2.048 MHz Figure 3. Current versus Supply Voltage Inactive Mode Rx ICC, SUPPLY CURRENT (mA) STD ICC, SUPPLY CURRENT (mA) 35 30 25 20 15 10 3.1 3.5 3.9 4.3 4.7 5.1 0.8 0.7 0.6 0.5 MCU Clock Out Off 0.4 0.3 0.2 0.1 0 2.7 5.5 3.1 3.5 3.9 4.3 4.7 5.1 5.5 VCC, SUPPLY VOLTAGE (V) VCC, SUPPLY VOLTAGE (V) Figure 5. Current versus Supply Voltage Receive Mode Figure 6. Current versus Supply Voltage Active Mode 5.0 8.0 4.9 7.9 4.8 4.7 4.6 MCU Clock Out On 4.5 4.4 4.3 MCU Clock Out Off 4.2 4.1 4.0 2.7 MCU Clock Out On 0.9 5.0 0 2.7 3.1 3.5 3.9 4.3 4.7 5.1 MCU Clock Out On 7.8 7.7 7.6 7.5 MCU Clock Out Off 7.4 7.3 7.2 7.1 7.0 2.7 5.5 3.1 3.5 3.9 4.3 4.7 5.1 VCC, SUPPLY VOLTAGE (V) VCC, SUPPLY VOLTAGE (V) Figure 7. Current versus Temperature Normalized to 25C Figure 8. Current versus Temperature Normalized to 25C 15 DELTA CURRENT DRAIN (% FROM 25 C) DELTA CURRENT DRAIN (% FROM 25 C) 1.0 ACT I CC , SUPPLY CURRENT (mA) I INACT IC, SUPPLY CURRENT (A) 40 6.0 4.0 10 5.0 Standby 0 -5.0 -10 -40 -30 -20 -10 Inactive 0 10 20 30 40 50 60 70 80 90 5.5 Receive 2.0 Active 0 -2.0 -4.0 -6.0 -8.0 -10 -12 -40 -30 -20 -10 TA, TEMPERATURE (C) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 0 10 20 30 40 50 60 70 80 90 TA, TEMPERATURE (C) MC13110A MC13111A 3.2-33 MC13110A MC13111A DC CURRENT Figure 10. Additional IP3 Supply Current Consumption versus Temperature Normalized to 25C 1.50 10 1.48 DELTA CURRENT DRAIN (mA) DELTA CURRENT DRAIN (% FROM 25 C) Figure 9. Additional Supply Current Consumption versus Supply Voltage, IP3 = <1> 1.46 AAAAA AAAAA 1.44 1.42 Receive/Active 1.40 1.38 1.36 1.34 1.32 1.30 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 4.3 4.5 4.7 4.9 5.1 5.3 5.5 5 AAAA AAAA 0 Receive/Active -5 -10 -15 -20 -40 -30 -20 -10 VCC, SUPPLY VOLTAGES (V) Vs , NORMALIZED VB VOLTAGE (V) STD I CC , SUPPLY CURRENT (mA) 650 No load 500 450 400 350 300 1.0 40 50 60 70 80 90 1.5075 10 pF load 700 550 20 30 Figure 12. VB Voltage versus Temperature Normalized to 1.5 V at 25C 800 600 10 TA, TEMPERATURE (C) Figure 11. Current Standby Mode versus MCU Clock Output 750 0 MCU clock off 10 100 MCU CLK OUT DIVIDE VALUE MC13110A MC13111A 3.2-34 1000 1.5050 1.5025 1.5000 1.4975 1.4950 1.4925 -20 -10 0 10 20 30 40 50 60 70 80 90 TA, TEMPERATURE (C) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A AAAAAAAAAAAAAAAA AAAAAAAA AAAAAAAAA AAAAAAAAAAAAAAAA AAAAAAAA AAAAAAAAA AAAAAAAA AAAAAAAAA AAAAAAAA AAAAAAAAA FIRST AND SECOND MIXER Mixer Description Figure 14. First Mixer Output Impedance The 1st and 2nd mixers are similar in design. Both are double balanced to suppress the LO and the input frequencies to give only the sum and difference frequencies at the mixer output. Typically the LO is suppressed better than -50 dB for the first mixer and better than -40 dB for the second mixer. The gain of the 1st mixer has a -3.0 dB corner at approximately 13 MHz and is used at a 10.7 MHz IF. It has an output impedance of 300 and matches to a typical 10.7 MHz ceramic filter with a source and load impedance of 330 . A series resistor may be used to raise the impedance for use with crystal filters. They typically have an input impedance much greater than 330 . First Mixer Figures 17 through 20 show the first mixer transfer curves for the voltage conversion gain, output level, and intermodulation. Notice that there is approximately 10 dB linearity improvement when the "IP3 Increase" bit is set to <1>. The "IP3 Increase" bit is a programmable bit as shown in the Serial Programmable Interface section under the Rx Counter Latch Register. The IP3 = <1> option will increase the supply current demand by 1.3 mA. Figure 13. First Mixer Input and Output Impedance Schematic 1st Mixer Mix1 In Mix1 Out RPI CPI CPO RPO Unit Output Impedance B IP3 = <0> (Set Low) 304 // 3.7 pF B IP3 = <1> (Set High) 300 // 4.0 pF Figures 13, 14, and 16 represent the input and output impedance for the first mixer. Notice that the input single-ended and differential impedances are basically the same. The output impedance as described in Figure 14 will be used to match to a ceramic or crystal filter's input impedance. A typical ceramic filter input impedance is 330 while crystal filter input impedance is usually 1500 . Exact impedance matching to ceramic filters are not critical, however, more attention needs to be given to the filter characteristics of a crystal filter. Crystal filters are much narrower. It is important to accurately match to these filters to guaranty a reasonable response. To find the IF bandwidth response of the first mixer refer to Figure 22. The -3.0 dB bandwidth point is approximately 13 MHz. Figure 15 is a summary of the first mixer feedthrough parameters. AAAAAAAAAAAAAAAA AAAAAAAAAAAA AAAAA AAAAAAAAAAAAAAAA AAAAAAAAAAAA AAAAA AAAAAAAAAAAA AAAAA AAAAAAAAAAAA AAAAA AAAAAAAAAAAA AAAAA Figure 15. First Mixer Feedthrough Parameters Parameter (dBm) 1st LO Feedthrough @ Mix1 In1 -70.0 1st LO Feedthrough @ Mix1 Out -55.5 RF Feedthrough @ Mix1 Out with -30 dBm -61.0 AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAA AAAAAAAAAAAAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAA AAAAAAAA AAAAAAA AAAAAAAA AAAAAAAA AAAAAAAAAAAAAA AAAAAAAAAAAAAAA AAAAAAA AAAAAAAA AAAAAAA AAAAAAAA AAAAAAAA AAAAAAA AAAAAAAA AAAAAAA AAAAAAAA AAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAA AAAAAAAA AAAAAAA AAAAAAAA AAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA Figure 16. First Mixer Input Impedance over Input Frequency US Center Channels France Center Channels 49 MHz 46 MHz 41 MHz 26 MHz Single-Ended 1550 // 3.7 pF 1560 // 3.7 pF 1570 // 3.8 pF 1650 // 3.7 pF Differential 1600 // 1.8 pF 1610 // 1.8 pF 1670 // 1.8 pF 1710 // 1.8 pF Unit NOTE: 11. Single-Ended data is from measured results. Differential data is from simulated results. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A 3.2-35 MC13110A MC13111A FIRST MIXER Figure 17. First Mixer Voltage Conversion Gain, IP3_bit = 0 Figure 18. First Mixer Voltage Conversion Gain, IP3_bit = 1 14 12 MXgain1, VOLTAGE CONVERSION GAIN (dB) MXgain1, VOLTAGE CONVERSION GAIN (dB) 14 10 8.0 VCC = 3.6 V IF = 10.695 MHz, 330 6.0 12 10 VCC = 3.6 V IF = 10.695 MHz, 330 8.0 4.0 2.0 -40 -35 -30 -25 -20 -15 6.0 -40 -10 -35 Figure 19. First Mixer Output Level and Intermodulation, IP3_bit = 0 Fundamental Level -20 3rd Order Intermodulation -40 -60 VCC = 3.6 V IF = 10.695 MHz, 330 -80 -35 -30 -25 -20 -15 Mix 1 Out, MIXER OUTPUT (dBm) Mix 1 Out, MIXER OUTPUT (dBm) -20 -15 -10 0 -20 Fundamental Level -40 3rd Order Intermodulation -60 VCC = 3.6 V IF = 10.695 MHz, 330 -80 -100 -40 -10 -35 -30 -25 -20 -15 Mix1 In, MIXER INPUT LEVEL (dBm) Mix1 In, MIXER INPUT LEVEL (dBm) Figure 21. First Mixer Compression versus Supply Voltage Figure 22. First IF Bandwidth -10 -10 15 IP3_bit = 1 -12 MXgain1, VOLTAGE CONVERSION GAIN (dB) VO 1.0 dB Mix1, 1.0 dB VOLTAGE COMPRESSION (dBm) -25 Figure 20. First Mixer Output Level and Intermodulation, IP3_bit = 1 0 -100 -40 -30 Mix1 In, MIXER INPUT LEVEL (dBm) Mix1 In, MIXER INPUT LEVEL (dBm) -14 IF = 10.695 MHz, 330 -16 -18 IP3_bit = 0 -20 -22 2.7 3.0 3.3 3.6 3.9 4.2 4.5 4.8 VCC Audio, AUDIO SUPPLY VOLTAGE (V) MC13110A MC13111A 3.2-36 10 5.0 0 -5.0 VCC = 3.6 V RL = 330 LO = 36.075 MHz -10 5.1 5.4 -15 1.0 10 100 f, IF FREQUENCY (MHz) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A Second Mixer Figures 26 through 29 represents the second mixer transfer characteristics for the voltage conversion gain, output level, and intermodulation. There is a slight improvement in gain when the "IP3 bit" is set to <1> for the second mixer. (Note: This is the same programmable bit discussed earlier in the section.) Figure 23. Second Mixer Input and Output Impedance Schematic The 2nd mixer input impedance is typically 2.8 k. It requires an external 360 parallel resistor for use with a standard 330 , 10.7 MHz ceramic filter. The second mixer output impedance is 1.5 k making it suitable to match standard 455 kHz ceramic filters. The IF bandwidth response of the second mixer is shown in Figure 31. The -3.0 dB corner is 2.5 MHz. The feedthrough parameters are summarized in Figure 25. AAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAA AAAAAAAAAAAA AAAAA AAAAAAAAAAAAAAAA AAAAAAAAAAAA AAAAA AAAAAAAAAAAA AAAAA AAAAAAAAAAAA AAAAA Figure 25. Second Mixer Feedthrough Parameters Parameter 2nd Mixer Mix2 In Mix2 Out RPI CPI CPO RPO (dBm) 2nd LO Feedthrough @ Mix2 Out -42.9 IF Feedthrough @ Mix2 Out with -30 dBm -61.7 AAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAA AAAAAAA AAAAAA AAAAAA AAAAAAAAAAAAAAAAA AAAAAAA AAAAAA AAAAAA AAAAAAA AAAAAA AAAAAA AAAAAAA AAAAAA AAAAAA AAAAAAA AAAAAA AAAAAA Figure 24. Second Mixer Input and Output Impedances Unit Input Impedance RPI // CPI Output Impedance RPO // CPO IP3 = <0> (Set Low) 2817 // 3.6 pF 1493 // 6.1 pF IP3 = <1> (Set High) 2817 // 3.6 pF 1435 // 6.2 pF MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A 3.2-37 MC13110A MC13111A SECOND MIXER Figure 27. Second Mixer Conversion Gain, IP3_bit = 1 Figure 26. Second Mixer Conversion Gain, IP3_bit = 0 22 20 MX gain2, VOLTAGE CONVERSION GAIN (dB) MX gain2, VOLTAGE CONVERSION GAIN (dB) 22 18 16 VCC = 3.6 V IF = 455 kHz RL = 1500 14 12 -40 -35 -30 -25 -20 -15 -35 -30 -25 -20 -15 Figure 28. Second Mixer Output Level and Intermodulation, IP3_bit = 0 Figure 29. Second Mixer Output Level and Intermodulation, IP3_bit = 1 -10 10 Fundamental Level 3rd Order Intermodulation -50 VCC = 3.6 V IF = 455 kHz RL = 1500 -70 -35 -30 -25 -20 -15 Mix 2 Out, MIXER OUTPUT (dBm) Mix 2 Out, MIXER OUTPUT (dBm) 16 Mix2 In, MIXER INPUT LEVEL (dBm) -90 -40 -10 Fundamental Level 3rd Order Intermodulation -30 -50 VCC = 3.6 V IF = 455 kHz RL = 1500 -70 -90 -40 -10 -35 -30 -25 -20 -15 Mix2 In, MIXER INPUT LEVEL (dBm) Mix2 In, MIXER INPUT LEVEL (dBm) Figure 30. Second Mixer Compression versus Supply Voltage Figure 31. Second IF Bandwidth -10 -10 25 -12 IP3_bit = 1 MX gain2 , VOLTAGE CONVERSION GAIN (dB) VO 1.0 dB Mix2, 1.0 dB VOLTAGE COMPRESSION (dBm) VCC = 3.6 V IF = 455 kHz RL = 1500 Mix2 In, MIXER INPUT LEVEL (dBm) -30 -14 IP3_bit = 0 -16 -18 IF = 455 kHz RL = 1500 -20 -22 2.7 18 14 -40 -10 10 -10 20 3.0 3.3 3.6 3.9 4.2 4.5 4.8 VCC Audio, AUDIO SUPPLY VOLTAGE (V) MC13110A MC13111A 3.2-38 20 15 10 5.0 5.1 5.4 0 0.1 VCC = 3.6 V RL = 1500 1.0 10 f, IF FREQUENCY (MHz) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A First Local Oscillator The 1st LO is a multi-vibrator oscillator. The tank circuit is composed of a parallel external capacitance and inductance, internal programmable capacitor matrix, and internal varactor. The local oscillator requires a voltage controlled input to the internal varactor and an external loop filter driven by on-board phase-lock control loop (PLL). The 1st LO internal component values have a tolerance of 15%. A typical dc bias level on the LO Input and LO Output is 0.45 Vdc. The temperature coefficient of the varactor is +0.08%/C. The curve in Figure 33 is the varactor control voltage range as it relates to varactor capacitance. It represents the expected internal capacitance for a given control voltage (VcapCtrl) of the MC13110A and MC13111A. Figure 32 shows a representative schematic of the first LO function. Figure 32. First Local Oscillator Schematic Vcap Ctrl Varactor 1st LO Programmable Internal Varactor Capacitor LO1 In Cext LO1 Out Lext To select the proper Lext and Cext we can do the following analysis. From Figure 34 it is observed that an inductor will have a significant affect on first LO performance, especially over frequency. The overall minimum Q required for first LO to function as it relates to the LO frequency is also given in Figure 34. Choose an inductor value, say 470 nH. From Figure 34, the minimum operating Q is approximately 25. From the following equation: Q Coil = Rp/X Coil where: Rp = parallel equivalent impedance (Figure 35). Cext can be determined as follows: 1 f LO 2p L extC ext + where: Lext = external inductance, Cext = external capacitance. Figure 34 clearly indicates that for lower coil values, higher quality factors (Q) are required for the first LO to function properly. Also, lower LO frequencies need higher Q's. In Figure 35 the internal programmable capacitor selection relative to the first LO frequency and the parallel impedance is shown. This information will help the user to decide what inductor (Lext) to choose for best performance in terms of Q. Refer to the Auxiliary Register in the Serial Interface Section for further discussion on LO programmability. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A 3.2-39 MC13110A MC13111A FIRST LOCAL OSCILLATOR Figure 34. First LO Minimum Required Overall Q Value versus Inductor Value 15 120 14 100 OVERALL MINIMUM Q VALUE Vcap , CAPACITANCE (pF) Figure 33. First LO Varicap Capacitance versus Control Voltage 13 12 11 10 9.0 8.0 7.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 40 50 MHz 20 1000 VcapCtrl, CONTROL VOLTAGE (V) LO INDUCTOR VALUE (nH) Figure 35. Representative Parallel Impedance versus Capacitor Select Figure 36. Varicap Value at VCV = 1.0 V Over Temperature Vcap , CAPACITANCE (pF) 11 RP, REPRESENTATIVE PARALLEL IMPEDANCE (k ) 30 MHz 40 MHz 50 MHz 0 2 1 5 6 7 4 3 8 10.6 10.2 9.8 9.4 9.8 9 10 11 12 13 14 15 0 25 55 70 85 TA, AMBIENT TEMPERATURE (C) Figure 37. Control Voltage versus Channel Number, U.S. Handset Application Figure 38. Control Voltage versus Channel Number, U.S. Baseset Application 1.8 1.8 1.7 Cap 11 1.7 1.6 Cap 10 Cap 6 1.5 1.4 1.3 Cap 9 1.2 1.1 1.0 0.9 1 -20 C1-C15, CAPACITANCE SELECT Vcap Ctrl, CONTROL VOLTAGE (V) Vcap Ctrl, CONTROL VOLTAGE (V) 40 MHz 60 0 100 5.5 100 10 30 MHz 80 3 5 7 9 11 13 15 17 19 21 23 CH1-CH25, U.S. HANDSET CHANNEL APPLICATION MC13110A MC13111A 3.2-40 25 1.6 Cap 8 1.5 Cap 3 1.4 1.3 Cap 4 1.2 1.1 1.0 0.9 0.8 1 3 5 7 9 11 13 15 17 19 21 23 25 CH1-CH25, U.S. BASESET CHANNEL APPLICATION MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A Second Local Oscillator The 2nd LO is a CMOS oscillator. It is used as the PLL reference oscillator and local oscillator for the second frequency conversion in the RF receiver. It is designed to utilize an external parallel resonant crystal. See schematic in Figure 39. Figure 39. Second Local Oscillator Schematic 2nd LO RPI CPI CPO Gm LO2 In RPO LO2 Out Xtal AAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAA AAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAA AAAAAAAAAA AAAAAAAA C1 C2 Figure 40. Second Local Oscillator Input and Output Impedance Input Impedance (RPI // CPI) 11.6 k // 2.9 pF Output Impedance (RPO // CPO) 9.6 k // 2.7 pF Figure 41 shows a typical gain/phase response of the second local oscillator. Load capacitance (CL), equivalent series resistance (ESR), and even supply voltage will have and affect on the 2nd LO response as shown in Figures 45 and 46. Except for the standby mode open loop gain is fairly constant as supply voltage increases from 2.5 V. This is due to the regulated voltage of 2.5 V on PLL Vref. From the graphs it can seen that optimum performance is achieved when C1 equals C2 (C1/C2 = 1). Figure 46 represents the ESR versus crystal load capacitance for the 2nd LO. This relationship was defined by using a 6.0 dB minimum loop gain margin at 3.6 V. This is considered the minimum gain margin to guarantee oscillator start-up. Oscillator start-up is also significantly affected by the crystal load capacitance selection. In Figures 42 and 43 the relationship between crystal load capacitance, supply voltage, and external load capacitance ratio (C2/C1), can be seen. The lower the load capacitance the better the performance. Given the desired crystal load capacitance, C1 and C2 can be determined from Figure 47. It is also interesting to point out that current consumption increases when C1 C2, as shown in Figure 44. Be careful not to overdrive the crystal. This could cause a noise problem. An external series resistor on the crystal output can be added to reduce the drive level, if necessary. SECOND LOCAL OSCILLATOR 15 90 10 67.5 5.0 0 10.24 MHz Crystal CL = 10 pF RS = 20 C1 = C2 = 15 pF Gain 45 22.5 -5.0 0 -10 -22.5 -15 -45 Phase -20 -25 10.235 10.24 -67.5 -90 10.245 Figure 42. Start-Up Time versus Capacitor Ratio, Inactive to Rx Mode 6.0 10.24 MHz Crystal CL = 10 pF RS = 20 5.0 START-UP TIME (ms) Vgain2, LO VOLTAGE GAIN (dB) Figure 41. Second LO Gain/Phase @ -10 dBm 4.0 VCC = 2.3 V 3.0 VCC = 2.7 V 2.0 VCC = 3.6 V 1.0 0 f, FREQUENCY (MHz) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA VCC = 5.0 V 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 CAPACITOR RATIO (C2:C1) MC13110A MC13111A 3.2-41 MC13110A MC13111A Figure 44. Second LO Current Consumption versus Capacitor Ratio Figure 43. Start-Up Time versus Capacitor Ratio, Inactive to Rx Mode 30 10.24 MHz Crystal CL = 24 pF RS = 16 25 800 VCC = 2.3 V 20 I STD, STANDBY CURRENT ( A) LO2, SECOND OSCILLATOR LEVEL (dBm) START-UP TIME (ms) SECOND LOCAL OSCILLATOR VCC = 2.7 V 15 VCC = 3.6 V 10 5.0 0 VCC = 5.0 V 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 500 400 11 Standby Current with Clk_Out Off 300 200 10 10.24 MHz Crystal CL = 10 pF RS = 20 100 0 0 0.5 1.0 Oscillator Level 1.5 2.0 2.5 3.0 3.5 Figure 45. Maximum Open Loop Gain versus Capacitor Ratio Figure 46. Maximum Allowable Equivalent Series Resistance (ESR) versus Crystal Load Capacitance ESR, EQUIVALENT RESISTANCE ( ) AVOL, OPEN LOOP GAIN (dB) 12 CAPACITOR RATIO (C2:C1) VCC = 2.7, 3.6, 5.0 V 12 VCC = 2.3 V 8.0 10.24 MHz Crystal CL = 10 pF RS = 20 Rx Mode 0 600 CAPACITOR RATIO (C2:C1) 16 0 700 4.0 20 4.0 13 Standby Current with Clk_Out Running at 2.048 MHz 0.5 1.0 1.5 2.0 2.5 3.0 3.5 9.0 4.0 1000 100 10 10 4.0 Curve Valid for fosc in the Range of 10 MHz to 12 MHz 12 CAPACITOR RATIO (C2:C1) 14 16 18 20 22 24 26 28 30 32 CRYSTAL LOAD CAPACITANCE (pF) Figure 47. Optimum Value for C1 and C2 versus Equivalent Required Parallel Capacitance of the Crystal OPTIMUM C1 AND C2 VALUE (pF) 70 60 C1 = C2 50 40 30 20 10 0 0 5.0 10 15 20 25 30 35 REQUIRED PARALLEL CRYSTAL LOAD CAPACITANCE (pF) MC13110A MC13111A 3.2-42 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A IF Limiter and Demodulator The limiting IF amplifier typically has about 110 dB of gain; the frequency response starts rolling off at 1.0 MHz. Decoupling capacitors should be placed close to Pins 31 and 32 to ensure low noise and stable operation. The IF input impedance is 1.5 k. This is a suitable match to 455 kHz ceramic filters. Figure 48. IF Limiter Schematic the IF bandpass Q is approximately 23; the loaded Q of the quadrature tank is chosen slightly lower at 15. Example: Let the total external C = 180 pF. (Note: the capacitance is the typical capacitance for the quad coil.) Since the external capacitance is much greater than the internal device and PCB parasitic capacitance, the parasitic capacitance may be neglected. Rewrite equation (2) and solve for L: Limiter Stage Lim In Lim Out RPI CPI AAAAAAAAAAAAAAAAA AAAAAA AAAAAAA AAAAAA AAAAAAAAAAAAAAAAA AAAAAA AAAAAAA AAAAAA AAAAAA AAAAAAA AAAAAA AAAAAA AAAAAAA AAAAAA Figure 49. Limiter Input Impedance Unit Lim In Input Impedance (RPI) Input Impedance (CPI) 1538 15.7 pF Figure 50. Quadrature Detector Demodulator Schematic C28 10 p Lim Out1 Q Coil Rext 22.1 k Toko Q Coil 7MCS-8128Z The quadrature detector is coupled to the IF with an external capacitor between Pins 27 and 28. Thus, the recovered signal level output is increased for a given bandwidth by increasing the capacitor. The external quadrature component may be either a LCR resonant circuit, which may be adjustable, or a ceramic resonator which is usually fixed tuned. (More on ceramic resonators later.) The bandwidth performance of the detector is controlled by the loaded Q of the LC tank circuit (Figure 50). The following equation defines the components which set the detector circuit's bandwidth: (1) RT = Q XL, where RT is the equivalent shunt resistance across the LC tank. XL is the reactance of the quadrature inductor at the IF frequency (XL= 2 f L). The 455 kHz IF center frequency is calculated by: L = (0.159)2/(C fc2 ) L = 678 H ; Thus, a standard value is chosen: L = 680 H (surface mount inductor) The value of the total damping resistor to obtain the required loaded Q of 15 can be calculated from equation (1): RT = Q(2 f L) RT = 15(2)(0.455)(680) = 29.5 k The internal resistance, Rint at the quadrature tank Pin 27 is approximately 100 k and is considered in determining the external resistance, Rext which is calculated from: Rext = ((RT)(Rint))/(Rint - RT) Rext = 41.8 k;Thus, choose a standard value: Rext = 39 k In Figure 50, the Rext is chosen to be 22.1 k. An adjustable quadrature coil is selected. This tank circuit represents one popular network used to match to the 455 kHz carrier frequency. The output of the detector is represented as a "S-curve" as shown in Figure 52. The goal is to tune the inductor in the area that is most linear on the "S-curve" (minimum distortion) to optimize the performance in terms of dc output level. The slope of the curve can also be adjusted by choosing higher or lower values of Rext . This will have an affect on the audio output level and bandwidth. As Rext is increased the detector output slope will decrease. The maximum audio output swing and distortion will be reduced and the bandwidth increased. Of course, just the opposite is true for smaller Rext. A ceramic discriminator is recommended for the quadrature circuit in applications where fixed tuning is desired. The ceramic discriminator and a 5.6 k resistor are placed from Pin 27 to VCC . A 22 pF capacitor is placed from Pin 28 to 27 to properly drive the discriminator. MuRata Erie has designed a resonator for this part (CDBM455C48 for USA & A/P regions and CDBM450C48 for Europe). This resonator has been designed specifically for the MC13110/111 family. Figure 51 shows the schematic used to generate the "S-curve" and waveform shown in Figure 54 and 55. (2) fc = [2 (L Cp)1/2] - 1 where L is the parallel tank inductor. Cp is the equivalent parallel capacitance of the parallel resonant tank circuit. The following is a design example for a detector at 455 kHz and a specific loaded Q: The loaded Q of the quadrature detector is chosen somewhat less than the Q of the IF bandpass for margin. For an IF frequency of 455 kHz and an IF bandpass of 20 kHz, MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A 3.2-43 MC13110A MC13111A (CDBM455C48 US; CDBM450C48 France) Figure 51. Ceramic Resonator Demodulator Schematic with Murata CDBM450C48 C28 390 p Lim Out1 Q Coil Rext 2.7 k Ceramic Resonator Murata CDBM450C34 The "S-curve" for the ceramic discriminator shown in Figure 54 is centered around 450 kHz. It is for the French application. The same resonator is also used for the US application and is centered around 455 kHz. Clearly, the "S-curves" for the resonator and quad coil have very similar limiter outputs. As discussed previously, the slope of the "S-curve" centered around the center frequency can be controlled by the parallel resistor, Rext. Distortion, bandwidth, and audio output level will be affected. IF LIMITER AND DEMODULATION Figure 52. S-Curve of Limiter Discriminator with Quadrature Coil Figure 53. Typical Limiter Output Waveform with Quadrature Coil 800 Toko 7MCS-8128Z 1.8 AC VOLTAGE LEVEL (V) Det Out, DC VOLTAGE (V) 2.2 1.4 1.0 0.6 0.2 425 435 445 455 465 475 1.0 400 200 0 485 Lim In, INPUT FREQUENCY (kHz) t, TIME (ms) Figure 54. S-Curve of Limiter Discriminator with Ceramic Resonator Figure 55. Typical Limiter Output Waveform with Ceramic Resonator 1.7 800 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 440 442 f = 450 kHz Vpptyp = 370 mV Murata CDBM450C48 AC VOLTAGE LEVEL (V) Det Out, DC VOLTAGE (V) f = 455 kHz Vpptyp = 344 mV 600 444 446 448 450 452 454 Lim In, INPUT FREQUENCY (kHz) MC13110A MC13111A 3.2-44 456 458 460 600 1.0 400 200 0 t, TIME (ms) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A RSSI and Carrier Detect The Received Signal Strength Indicator (RSSI) indicates the strength of the IF level. The output is proportional to the logarithm of the IF input signal magnitude. RSSI dynamic range is typically 80 dB. A 187 k resistor to ground is provided internally to the IC. This internal resistor converts the RSSI current to a voltage level at the "RSSI" pin. To improve the RSSI accuracy over temperature an internal compensated reference is used. Figure 56 shows the RSSI versus RF input. The slope of the curve is 16.5 mV/dB. The Carrier Detect Output (CD Out) is an open-collector transistor output. An external pull-up resistor of 100 k will be required to bias this device. To form a carrier detect filter a capacitor needs to be connected from the RSSI pin to ground. The carrier detect threshold is programmable through the MPU interface (see "Carrier Detect Threshold Programming" in the serial interface section). The range can be scaled by connecting additional external resistance from the RSSI pin to ground in parallel with the capacitor. From Figure 57, the affect of an external resistor at RSSI on the carrier detect level can be noticed. Since there is hysteresis in the carrier detect comparator, one trip level can be found when the input signal is increased while the another one can be found when the signal is decreased. Figure 58 represents the RSSI ripple in relation to the RF input for different filtering capacitors at RSSI. Clearly, the higher the capacitor, the less the ripple. However, at low carrier detect thresholds, the ripple might supersede the hysteresis of the carrier detect. The carrier detect output may appear to be unstable. Using a large capacitor will help to stabilize the RSSI level, but RSSI charge time will be affected. Figure 59 shows this relationship. The user must decide on a compromise between the RSSI ripple and RSSI start-up time. Choose a 0.01 f capacitor as a starting point. For low carrier detect threshold settings, a 0.047 f capacitor is recommended. RSSI AND CARRIER DETECT Figure 57. Carrier Detect Threshold versus External RSSI Resistor 1.6 0 1.4 -10 1.2 -20 MIX1 IN, RF INPUT (dBm) RSSI OUTPUT (Vdc) Figure 56. Typical RSSI Voltage Level versus RF Input 1.0 0.8 0.6 0.4 0.2 Increasing Signal -40 -50 Decreasing Signal -60 Increasing Signal Mixer 1 Input -70 Decreasing Signal -80 0 -120 -100 -80 -60 -40 -20 -90 100 0 1000 Mix1 In, RF INPUT (dBm) RRSSI, LOAD RESISTANCE (k) Figure 58. RSSI Ripple versus RF Input Level for Different RSSI Capacitors Figure 59. RSSI Charge Time versus Capacitor Value 35 10 nF 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 -120 30 RSSI CHARGE TIME (ms) 11 10 RSSI RIPPLE (mVrms) Limiter Input -30 22 nF 33 nF 47 nF 100 nF 25 20 15 10 5.0 -110 -100 -90 -80 -70 -60 Mix1 In, RF INPUT (dBm) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 CRSSI, LOAD CAPACITANCE (F) MC13110A MC13111A 3.2-45 MC13110A MC13111A RF System Performance The sensitivity of the IC is typically 0.4 Vrms matched (single ended or differential) with no preamp. To achieve suitable system performance, a preamp and passive duplexer may be used. In production final test, each section of the IC is separately tested to guarantee its system performance in the specific application. The preamp and duplexer (differential, matched input) yields typically -115 dBm @ 12 dB SINAD sensitivity performance under full duplex operation. See Figure 45 and 48. The duplexer is important to achieve full duplex operation without significant "de-sensing" of the receiver by the transmitter. The combination of the duplexer and preamp circuit should attenuate the transmitter power to the receiver by over 60 dB. This will improve the receiver system noise figure without giving up too much IMD performance. The duplexer may be a two piece unit offered by Shimida, Sansui, or Toko products (designed for 25 channel CT-0 cordless phone). The duplexer frequency response at the receiver port has a notch at the transmitter frequency band of about 35 to 40 dB with a 2.0 to 3.0 dB insertion loss at the receiver frequency band. The preamp circuit utilizes a tuned transformer at the output side of the amplifier. This transformer is designed to bandpass filter at the receiver input frequency while rejecting the transmitter frequency. The tuned preamp also improves the noise performance by reducing the bandwidth of the pass band and by reducing the second stage contribution of the 1st mixer. The preamp is biased such that it yields suitable noise figure and gain. The following matching networks have been used to obtain 12 dB SINAD sensitivity numbers: Figure 60. Matching Input Networks Differential Match 360 RF In1 Mix1 In1 39 1:5 Mix1 In2 Single-ended Match 680 Mix1 In1 39 1:5 0.01 AAAAAAAAAAAAAAAA AAAAAA AAAAAA AAAAAA AAAAAAAAAAAAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA AAAAAA Figure 61. 12 dB SINAD Sensitivity Levels, US Handset Application Channel 21 Sensitivity (dBm) Input Impedance (dBm) Differential matched -115.3 50.2 0.1j Single-ended match -114.8 50.2 0.1j Single-ended 50 -100.1 50.2 0.1j The graphs in Figures 64 to 69 are performance results based on Evaluation Board Schematic (Figure 137). This evaluation board did not use a duplexer or preamp stage. Figure 62 is a summary of the RF performance and Figure 63 contains the French RF Performance Summary. AAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAA Figure 62. RF Performance Summary for US Applications MC13110A/MC13111A (fdev = 3.0 kHz, fmod = 1.0 kHz, 50 ) Parameter Handset Baseset Unit -100.1 -100.1 dBm Recovered Audio 132 132 mVrms SINAD @ -30 dBm 41.8 41.4 dB Sensitivity at 12 dB SINAD THD @ -30 dBm 0.8 0.8 % S/N @ -30 dBm 78.2 78.5 dB AMRR @ -30 dBm 73.4 72.2 dB RSSI range >80 >80 dB AAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAA Figure 63. RF Performance Summary for US French Applications MC13110A/MC13111A (fdev = 1.5 kHz, fmod = 1.0 kHz, 50 ) 15 RF In1 The exact impedance looking into the RF In1 pin is displayed in the following table along with the sensitivity levels. 15 Mix1 In2 Parameter Handset Baseset Unit Sensitivity at 12 dB SINAD -91 -90.8 dBm Recovered Audio 89.8 90 mVrms SINAD @ -30 dBm 42.1 44.3 dB THD @ -30 dBm 0.8 0.8 % S/N @ -30 dBm 75.7 75.1 dB AMRR @ -30 dBm 56 84.7 dB RSSI range >80 >80 dB Single-ended 50 Mix1 In1 RF In1 49.9 Mix1 In2 0.01 MC13110A MC13111A 3.2-46 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A Figure 65. Typical Performance Parameters Over U.S. Handset Channel Frequencies Figure 64. Typical Receiver Performance Parameters U.S. Handset Application Channel 21 80 70 40 0.9 SINAD 30 0.7 132 50 131 0.1 0 35 -20 SINAD 45 129 1 3 5 9 11 13 15 17 19 21 23 128 25 Figure 67. Typical Receiver Performance for US Handset Application Channel 21 138 S/N 137 75 136 70 135 AMRR 65 134 60 133 55 132 SA Out Level 50 131 SINAD 130 40 129 35 128 25 3 5 7 9 11 13 15 17 19 21 23 SA Out, SPEAKER AMPLIFIER OUTPUT (dBV) Figure 66. Typical Performance Parameters Over U.S. Baseset Channel Frequencies 45 -10 S+N+D -30 -50 N+D -70 AMR -90 N -110 -120 -100 U.S. BASESET CHANNEL NUMBER -80 -60 -40 -20 0 Mix1 In1, FIRST MIXER INPUT (dBm) Figure 69. 12 dB SINAD Sensitivity Over US Baseset Application Channels Figure 68. 12 dB SINAD Sensitivity Over US Handset Application Channels -96 -96 -97 -97 12 dB SINAD (dBm) 12 dB SINAD (dBm) 7 U.S. HANDSET CHANNEL NUMBER 80 -98 -99 -100 -98 -99 -100 -101 -101 -102 130 Mix1 In, RF INPUT (dBm) 85 1 133 SA Out Level 55 40 -40 134 60 0.3 -60 135 65 10 -80 136 AMRR 70 0.5 -100 137 75 20 0 -120 SINAD, S/N, AMRR (dB) SINAD, S/N, AMRR (dB) 1.1 RSSI OUTPUT (V) RSSI SA Out, SPEAKER AMPLIFIER OUTPUT (mVrms) SINAD, S/N (dB) 1.3 50 S/N 80 1.5 S/N 60 138 85 1.7 1 5 9 13 17 21 25 -102 US CHANNEL NUMBERS MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 1 5 9 13 17 21 25 US CHANNEL NUMBERS MC13110A MC13111A 3.2-47 SA Out, SPEAKER AMPLIFIER OUTPUT (mVrms) RF SYSTEM PERFORMANCE MC13110A MC13111A Receive Audio Path The Rx Audio signal path begins at "Rx Audio In" and goes through the IC to "E Out". The "Rx Audio In", "Scr Out", and "E In" pins are all ac-coupled. This signal path consists of filters; programmable Rx gain adjust, Rx mute, and volume control, and finally the expander. The typical maximum output voltage at "E Out" should be approximately 0 dBV @ THD = 5.0% . Figures 71 to 73 represent the receive audio path filter response. The filter response attenuation is very sharp above 3900 Hz, which is the cutoff frequency. Inband (audio), out-of-band, and ripple characteristics are also shown in these graphs. The group delay (Figure 75) has a peak around 6.5 kHz. This spike is formed by rapid change in the phase at the frequency. In practice this does not cause a problem since the signal is attenuated by at least 50 dB. The output capability at "Scr Out" and "E Out" are shown in Figures 76, 77, and 78. The results were obtained by increasing the input level for 2.0% distortion at the outputs. In Figure 70, noise data for the Rx audio path is shown. At Scr Out, the noise level clearly rises when the scrambler is enabled. However, assuming a nominal output level of -20 dBV (100 mVrms) at the 0 dB gain setting, the noise floor is more than 56 dB below the audio signal. However, the noise data at E Out and SA Out is much more improved. Speaker Amp The Speaker Amp is an inverting rail-to-rail operational amplifier. The noninverting input is connected to the internal VB reference. External resistors and capacitors are used to set the gain and frequency response. The "SA In" input pin must be ac-coupled. The typical output voltage at "SA Out" is 2.6 Vpp with a 130 load. The speaker amp response is shown in Figures 79 and 80. Data Amp Comparator The data amp comparator is an inverting hysteresis comparator. Its open collector output has an internal 100 k pull-up resistor. A band pass filter is connected between the "Det Out" pin and the "DA In" pin with component values as shown in the Application Circuit schematic. The "DA In" input signal needs to be ac-coupled, too. AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA Figure 70. Rx Path Noise Data Receive Scrambler Receive Gain (dB) Volume (dB) SCR_Out (dBV) E_Out (dBV) SA_Out (dBV) off/on muted muted < -95 < -95 < -95 off -9.0 -14 -92 < -95 < -95 off 0 0 -85 < -95 < -95 off 1.0 16 -76 < -95 < -95 on (MC13110A) -9.0 -14 -85 < -95 < -95 on (MC13110A) 0 0 -77 < -95 < -95 on (MC13110A) 10 16 -66 < -95 < -95 MC13110A MC13111A 3.2-48 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A Rx AUDIO Figure 72. Rx Audio Inband Frequency Response 10 5.0 -10 -5.0 V gain, VOLTAGE GAIN (dB) V gain, VOLTAGE GAIN (dB) Figure 71. Rx Audio Wideband Frequency Response -30 -50 -70 -110 -90 100 Rx Audio In to Scr Out Vin = -20 dBV 1000 -15 -25 -35 -45 10000 100000 Rx Audio In to Scr Out Vin = -20 dBV -55 100 1000000 1000 10000 f, FREQUENCY (Hz) f, FREQUENCY (Hz) Figure 73. Rx Audio Ripple Response Figure 74. Rx Audio Inband Phase Response 0.5 180 90 0.1 PHASE () -0.1 -0.3 -0.5 100 45 0 -45 -90 Rx Audio In to Scr Out Vin = -20 dBV 1000 10000 Rx Audio In -135 to Scr Out Vin = -20 dBV -180 100 1000 f, FREQUENCY (Hz) Figure 75. Rx Audio Inband Group Delay Figure 76. Rx Audio Expander Response E out , OUTPUT VOLTAGE LEVEL (dBV) GROUP DELAY (ms) 10 Rx Audio In to Scr Out Vin = -20 dBV 1.0 0.1 0 100 1000 10000 f, FREQUENCY (Hz) 10000 5.0 28 -5.0 24 -15 Expander Transfer 20 -25 16 -35 12 -45 8.0 -55 DISTORTION (%) V gain, VOLTAGE GAIN (dB) 135 0.3 4.0 Distortion -65 -40 f, FREQUENCY (Hz) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA -35 -30 -25 -20 -15 -10 -5.0 0 0 Ein, INPUT VOLTAGE LEVEL (dBV) MC13110A MC13111A 3.2-49 MC13110A MC13111A Rx AUDIO Figure 77. Rx Audio Maximum Output Voltage versus Gain Control Setting Figure 78. Rx Audio Maximum Output Voltage versus Volume Setting 1.4 -6.0 E out , OUTPUT VOLTAGE LEVEL (dBV) Scr Out, OUTPUT VOLTAGE LEVEL (dBV) -4.0 VCC = 3.6 V THD = 2% -8.0 -10 -12 -14 -16 -18 -20 -9.0 -7.0 -5.0 -3.0 -1.0 1.0 3.0 5.0 7.0 VCC = 3.6 V THD = 2% 1.2 1.0 0.8 0.6 0.4 0.2 0 -14 9.0 Rx PROGRAMMABLE GAIN CONTROL SETTING No Load 620 1.2 1.0 130 0.8 0.6 0.4 0.2 0 0 0.4 0.8 1.2 1.6 2.0 2.4 SA In, INPUT VOLTAGE LEVEL (dBV) MC13110A MC13111A 3.2-50 2.8 -2.0 2.0 6.0 10 14 Figure 80. Rx Audio Speaker Amplifier Distortion SA Out, OUTPUT VOLTAGE LEVEL(dBV) SA Out, OUTPUT VOLTAGE LEVEL (dBV) Figure 79. Rx Audio Speaker Amplifier Drive 1.6 -6.0 Rx PROGRAMMABLE VOLUME LEVEL SETTING 1.8 1.4 -10 3.2 25 130 20 15 620 No Load 10 5.0 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 SA In, INPUT VOLTAGE LEVEL (dBV) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A Transmit Audio Path This portion of the audio path goes from "C In" to "Tx Out". The "C In" pin will be ac-coupled. The audio transmit signal path includes automatic level control (ALC) (also referred to as the Compressor), Tx mute, limiter, filters, and Tx gain adjust. The ALC provides "soft" limiting to the output signal swing as the input voltage slowly increases. With this technique the gain is slightly lowered to help reduce distortion of the audio signal. The limiter section provides hard limiting due to rapidly changing signal levels, or transients. This is accomplished by clipping the signal peaks. The ALC, Tx mute, and limiter functions can be enabled or disabled via the MPU serial interface. The Tx gain adjust can also be remotely controlled to set different desired signal levels. The typical maximum output voltage at "Tx Out" should be approximately 0 dBV @ THD = 5.0%. Figures 82 to 86 represent the transmit audio path filter response. The filter response attenuation, again, is very definite above 3800 Hz. This is the filter cutoff frequency. Inband (audio), wideband, and ripple characteristics are also shown in these graphs. The compressor transfer characteristics, shown in Figure 87, has three different slopes. A typical compressor slope can be found between -55 and -15 dBV. Here the slope is 2.0. At an input level above -15 dBV the automatic level control (ALC) function is activated and prevents hard clipping of the output. The slope below -55 dBV input level is one. This is where the compressor curve ends. Above 5.0 dBV the output actually begins to decrease and distort. This is due to supply voltage limitations. In Figure 88 the ALC function is off. Here the compressor curve continues to increase above -15 dBV up to -4.0 dBV. The limiter begins to clip the output signal at this level and distortion is rapidly rising. Similarly, Figure 68 (ALC and Limiter Off) shows to compressor transfer curve extending all the way up to the maximum output. Finally, Figure 90 through 93 show the Tx Out signal versus several combinations of ALC and Limiter selected. Figure 81 is the noise data measured for the MC13110A/13111A. This data is for 0 dB gain setting and -20 dBV (100 mVrms) audio levels. AAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAA Figure 81. Tx Path Noise Data Transmit Scrambler Transmit Gain (dB) Amp_Out (dBV) Tx_Out (dBV) off/on muted muted < -95 off -9.0 < -95 -83 off 0 < -95 -74 off 10 < -95 -64 on (MC13110A) -9.0 < -95 -82 on (MC13110A) 0 < -95 -73 on (MC13110A) 10 -< -95 -63 Mic Amp Like the Speaker Amp the Mic Amp is also an inverting rail-to-rail operational amplifier. The noninverting input terminal is connected to the internal VB reference. External resistors and capacitors are used to set the gain and frequency response. The "Tx In" input is ac-coupled. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A 3.2-51 MC13110A MC13111A Tx AUDIO 10 0 -10 Figure 83. Tx Audio Inband Frequency Response 5.0 -5.0 V gain, VOLTAGE GAIN (dB) -20 -30 -40 -50 -60 -70 -80 C In to Tx Out -90 Vin = -10 dBV -100 100 1000 10000 100000 -15 -25 -35 -45 C In to Tx Out Vin = -10 dBV -55 100 1000000 1000 f, FREQUENCY (Hz) f, FREQUENCY (Hz) Figure 85. Tx Audio Inband Phase Response 180 0.2 135 0.1 90 0 PHASE () V gain, VOLTAGE GAIN (dB) Figure 84. Tx Audio Ripple Response 0.3 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 45 0 -45 -90 C In to Tx Out Vin = -10 dBV -0.7 100 C In to Tx Out Vin = -10 dBV -135 1000 10000 -180 100 1000 f, FREQUENCY (Hz) Figure 86. Tx Audio Inband Group Delay 0 GROUP DELAY (ms) -5.0 C In to Tx Out Vin = -10 dBV 1.0 0.1 0 100 1000 f, FREQUENCY (Hz) MC13110A MC13111A 3.2-52 10000 f, FREQUENCY (Hz) Tx Out, OUTPUT VOLTAGE LEVEL (dBV) 10 10000 10000 Figure 87. Tx Audio Compressor Response 4.0 ALC On, Limiter On or Off -10 3.0 -15 Compressor -20 2.0 -25 Distortion -30 1.0 -35 -40 -60 -50 -40 -30 -20 -10 0 0 10 C In, INPUT VOLTAGE LEVEL (dBV) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA DISTORTION (%) V gain, VOLTAGE GAIN (dB) Figure 82. Tx Audio Wideband Frequency Response MC13110A MC13111A 4.0 ALC Off, Limiter On -5.0 -5.0 -10 3.0 -15 Compressor Transfer 2.0 -20 -25 1.0 -30 Distortion -35 -40 -60 0 -50 -40 -30 -20 -10 0 0 10 4.0 ALC Off, Limiter Off -10 3.0 -15 Compressor Transfer -20 2.0 -25 -30 1.0 Distortion -35 -40 -60 -50 -40 -30 -20 -10 0 C In, INPUT VOLTAGE LEVEL (dBV) C In, INPUT VOLTAGE LEVEL (dBV) Figure 90. Tx Audio Maximum Output Voltage versus Gain Control Setting Figure 91. Tx Output Audio Response 0 VCC = 3.6 V 0 10 Limiter and ALC Off A -4.0 OUTPUT LEVEL (mV) Tx Out, OUTPUT VOLTAGE LEVEL (dBV) Figure 89. Tx Audio Compressor Response DISTORTION (%) Figure 88. Tx Audio Compressor Response 0 DISTORTION (%) Tx Out, OUTPUT VOLTAGE LEVEL (dBV) Tx Out, OUTPUT VOLTAGE LEVEL (dBV) Tx AUDIO B -8.0 C -12 -16 -20 -9.0 A: ALC Off, Limiter Off B: ALC Off, Limiter On C: ALC On, Limiter On or Off -7.0 -5.0 -3.0 -1.0 1.0 3.0 5.0 7.0 200 mV/Div 500 s/Div 9.0 Tx PROGRAMMABLE GAIN CONTROL SETTING t, TIME (s) Figure 92. Tx Output Audio Response Figure 93. Tx Audio Output Response OUTPUT LEVEL (mV) Limiter On and ALC On OUTPUT LEVEL (mV) Limiter On and ALC Off 200 mV/Div 500 s/Div 200 mV/Div 500 s/Div t, TIME (s) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA t, TIME (s) MC13110A MC13111A 3.2-53 MC13110A MC13111A PLL SYNTHESIZER SECTION microprocessor. The maximum input and output levels for these pins is VCC. Figure 94 shows a simplified schematic of the I/O pins. PLL Frequency Synthesizer General Description Figure 95 shows a simplified block diagram of the programmable universal dual phase locked loop (PLL) designed into the MC13110A and MC13111A IC. This dual PLL is fully programmable through the MCU serial interface and supports most country channel frequencies including USA (25 ch), Spain, Australia, Korea, New Zealand, U.K., Netherlands, France, and China (see channel frequency tables in AN1575, "Worldwide Cordless Telephone Frequencies"). The 2nd local oscillator and reference divider provide the reference frequency signal for the Rx and Tx PLL loops. The programmed divider value for the reference divider is selected based on the crystal frequency and the desired Rx and Tx reference frequency values. For the U.K., additional divide by 25 and divide by 4 blocks are provided to allow for generation of the 1.0 kHz and 6.2 kHz reference frequencies. The 14-bit Rx counter is programmed for the desired first local oscillator frequency. The 14-bit T x counter is programmed for the desired transmit channel frequency. All counters power-up to a set default state for USA channel #21 using a 10.24 MHz reference frequency crystal (see power-up default latch register state in the Serial Programmable Interface section). To extend the sensitivity of the 1st LO for U.S. 25 channel operation, internal fixed capacitors can be connected to the tank circuit through microprocessor programmable control. When designing the external PLL loop filters, it is recommended that the Tx and Rx phase detectors be considered as current drive type outputs. The loop filter control voltage must be 0.5 V away from either the positive or negative supply rail. Figure 94. PLL I/O Pin Simplified Schematics PLL Vref (2.5 V) I/O VCC Audio (2.7 to 5.5 V) PLL Vref (2.5 V) VCC Audio (2.7 to 5.5 V) In Out 2.0 A LO2 In, LO2 Out, Rx PD, Tx PD and Tx VCO Pins Data, Clk and EN Pins Clk Out Pin PLL Loop Control Voltage Range The control voltage for the Tx and Rx loop filters is set by the phase detector outputs which drive the external loop filters. The phase detectors are best considered to have a current mode type output. The output can have three states; ground, high impedance, and positive supply, which in this case is the voltage at "PLL Vref". When the loop is locked the phase detector outputs are at high impedance. An exception of this state is for narrow current pulses, referenced to either the positive or negative supply rails. If the loop voltages get within 0.5 V of either rail the linear current output starts to degrade. The phase detector current source was not designed to operate at the supply rails. VCO tuning range will also be limited by this voltage range The maximum loop control voltage is the "PLL Vref" voltage which is 2.5 V. If a higher loop control voltage range is desired, the "PLL Vref" pin can be pulled to a higher voltage. It can be tied directly to the VCC voltage (with suitable filter capacitors connected close to each pin). When this is done, the internal voltage regulator is automatically disabled. This is commonly used in the telephone base set where an external 5.0 V regulated voltage is available. It is important to remember, that if "PLL Vref" is tied to VCC and VCC is not a regulated voltage, the PLL loop parameters and lock-up time will vary with supply voltage variation. The phase detector gain constant, Kpd, will not be affected if the "PLL Vref" is tied to VCC. PLL I/O Pin Configurations The 2nd LO, Rx and Tx PLL's, and MPU serial interface are powered by the internal voltage regulator at the "PLL Vref" pin. The "PLL Vref" pin is the output of a voltage regulator which is powered from the "VCC Audio" power supply pin. It is regulated by an internal bandgap voltage reference. Therefore, the maximum input and output levels for most of the PLL I/O pins (LO2 In, LO2 Out, Rx PD, Tx PD, Tx VCO) is the regulated voltage at the "PLL Vref" pin. The ESD protection diodes on these pins are also connected to "PLL Vref". Internal level shift buffers are provided for the pins (Data, Clk, EN, Clk Out) which connect directly to the Figure 95. Dual PLL Simplified Block Diagram Tx VCO 14-b Programmable Tx Counter U.K. Base Tx Ref LO2 In 1 LO2 Out 2 12-b / 25 Programmable /4 Reference /1 Counter U.K. Handset U.K. Base Rx Ref U.K. Handset 14-b Programmable Rx Counter 1st LO 8 Tx Phase Detector (Current Output) Tx PD 6 Rx PD Rx Phase Detector (Current Output) Programmable Internal Capacitor 4 Vcap Ctrl Tx VCO LP Loop Filter LP Loop Filter 42 LO1 In 40 LO1 Out 41 MC13110A MC13111A 3.2-54 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A Loop Filter Characteristics Lets consider the following discussion on loop filters. The fundamental loop characteristics, such as capture range, loop bandwidth, lock-up time, and transient response are controlled externally by loop filtering. Figure 96 is the general model for a Phase Lock Loop (PLL). second order slope (-40 dB/dec) creating a phase of -180 degrees at the lower and higher frequencies. The filter characteristic needs to be determined such that it is adding a pole and a zero around the 0 dB point to guarantee sufficient phase margin in this design (Qp in Figure 98). Figure 98. Bode Plot of Gain and Phase in Open Loop Condition 0 Figure 96. PLL Model Phase Detector (Kpd) Filter (Kf) VCO (Ko) Open Loop Gain fo Divider (Kn) Where: Kpd = Phase Detector Gain Constant Kf = Loop Filter Transfer Function Ko = VCO Gain Constant Kn = Divide Ratio (1/N) fi = Input frequency fo = Output frequency fo/N = Feedback frequency divided by N A, Open Loop Gain fi 0 -90 Phase Qp wp From control theory the loop transfer function can be represented as follows: A Figure 97. Loop Filter with Additional Integrating Element From Phase Detector C1 C2 From Figure 97, capacitor C1 forms an additional integrator, providing the type 2 response, and filters the discrete current steps from the phase detector output. The function of the additional components R2 and C2 is to create a pole and a zero (together with C1) around the 0 dB point of the open loop gain. This will create sufficient phase margin for stable loop operation. In Figure 98, the open loop gain and the phase is displayed in the form of a Bode plot. Since there are two integrating functions in the loop, originating from the loopfilter and the VCO gain, the open loop gain response follows a K jwK n ) jw(R2C2)) jw 1 ) jw R2C1C2 C1)C2 K (1 pd o (1) The two time constants creating the pole and the zero in the Bode plot can now be defined as: R2C1C2 + C1 ) C2 T1 T2 + R2C2 By substituting equation (2) into (1), it follows: A + openloop K K T1 pd o w 2C1K nT2 1 1 (2) ) jwT2 ) jwT1 (3) The phase margin (phase + 180) is thus determined by: Qp To VCO R2 + openloop A = Kpd Kf Ko Kn Open loop gain Kpd can be either expressed as being 2.5 V/4.0 or 1.0 mA/2.0 for the CT-0 circuits. More details about performance of different type PLL loops, refer to Motorola application note AN535. The loop filter can take the form of a simple low pass filter. A current output, type 2 filter will be used in this discussion since it has the advantage of improved step response, velocity, and acceleration. The type 2 low pass filter discussed here is represented as follows: -180 The open loop gain including the filter response can be expressed as: + arctan(wT2)-arctan(wT1) (4) At w=wp, the derivative of the phase margin may be set to zero in order to assure maximum phase margin occurs at wp (see also Figure 98). This provides an expression for wp: dQ p dw +0+ T2 - T1 ) (wT2) 1 ) (wT1) w + wp + 1 T2T1 2 1 2 (5) (6) Or rewritten: MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA T1 + w 12T2 p (7) MC13110A MC13111A 3.2-55 MC13110A MC13111A By substituting into equation (4), solve for T2: + Qp 2 ) p4 (8) wp By choosing a value for wp and Qp, T1 and T2 can be calculated. The choice of Qp determines the stability of the loop. In general, choosing a phase margin of 45 degrees is a good choice to start calculations. Choosing lower phase margins will provide somewhat faster lock-times, but also generate higher overshoots on the control line to the VCO. This will present a less stable system. Larger values of phase margin provide a more stable system, but also increase lock-times. The practical range for phase margin is 30 degrees up to 70 degrees. The selection of wp is strongly related to the desired lock-time. Since it is quite complicated to accurately calculate lock time, a good first order approach is: T_lock [ w3p + K K T1 pd o w 2K nT2 (11) (12) + 2p 1LC (13) T In which L represents the external inductor value and CT represents the total capacitance (including internal capacitance) in parallel with the inductor. The VCO gain can be easily calculated via the internal varicap transfer curve shown below. Figure 99. Varicap Capacitance versus Control Voltage 15 14 ) ) 1 1 2 w pT2 2 w pT1 With C1 known, and equation (2) solve C2 and R2: MC13110A MC13111A 3.2-56 f (9) Equation (9) only provides an order of magnitude for lock time. It does not clearly define what the exact frequency difference is from the desired frequency and it does not show the effect of phase margin. It assumes, however, that the phase detector steps up to the desired control voltage without hesitation. In practice, such step response approach is not really valid. The two input frequencies are not locked. Their phase maybe momentarily zero and force the phase detector into a high impedance mode. Hence, the lock times may be found to be somewhat higher. In general, wp should be chosen far below the reference frequency in order for the filter to provide sufficient attenuation at that frequency. In some applications, the reference frequency might represent the spacing between channels. Any feedthrough to the VCO that shows up as a spur might affect adjacent channel rejection. In theory, with the loop in lock, there is no signal coming from the phase detector. But in practice leakage currents will be supplied to both the VCO and the phase detector. The external capacitors may show some leakage, too. Hence, the lower wp, the better the reference frequency is filtered, but the longer it takes for the loop to lock. As shown in Figure 98, the open loop gain at wp is 1 (or 0 dB), and thus the absolute value of the complex open loop gain as shown in equation (3) solves C1: C1 *1 + C1 T2 T1 R2 + T2 C2 The VCO gain is dependent on the selection of the external inductor and the frequency required. The free running frequency of the VCO is determined by: (10) Vcap , CAPACITANCE (pF) T2 tan C2 13 12 11 10 9.0 8.0 7.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 As can be derived from Figure 99, the varicap capacitance changes 1.3 pF over the voltage range from 1.0 V to 2.0 V: DCvar + 1.3VpF (14) Combining (13) with (14) the VCO gain can be determined by: Ko + jw1 2p L C 1 T ) DCvar 2 * 2p L C 1 T ) DCvar 2 (15) Although the basic loopfilter previously described provides adequate performance for most applications, an extra pole may be added for additional reference frequency filtering. Given that the channel spacing in a CT-0 telephone set is based on the reference frequency, and any feedthrough to MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A the first LO may effect parameters like adjacent channel rejection and intermodulation. Figure 100 shows a loopfilter architecture incorporating an additional pole. Figure 100. Loop Filter with Additional Integrating Element From Phase Detector To VCO R3 R2 C1 C3 C2 For the additional pole formed by R3 and C3 to be efficient, the cut-off frequency must be much lower than the reference frequency. However, it must also be higher than wp in order not to compromise phase margin too much. The following equations were derived in a similar manner as for the basic filter previously described. Similarly, it can be shown: A K Ko pd 1 ) jwT2 + - ) openloop 2 2 K w (C1 ) C2 ) C3) - w C1C2C3R2R3 1 ) jwT1 (16) n In which: T1 ) (C1C2)T3 + C1(C1))C2C2))T2 C3 * w 2C1T2T3 T2 + R2C2 (17) (18) T3 + R3C3 (19) From T1 it can be derived that: C2 + (T1 ) T2)C3 * C1 T2T3 )* T3T1 * T1 ) w T1T2T3 2 (20) In analogy with (10), by forcing the loopgain to 1 (0 dB) at wp, we obtain: C1(T1 ) T2) ) C2T3 ) C3T2 + K K pd o K nw p 2 Solving for C1: (T2 C1 ) 1) 1 * T1)T3C3 * (T3 * T1)T2C3 ) (T3 * T1) + (T3 * T1)T2 ) (T3 * T1)T3 * T2 2 w pT2 2 w pT1 K K T1 pd o w p 2K n (21) ) wpT2 2 1) w pT1 1 ) T3 * T1 ) wp2T1T2T3 T3 2 (22) By selecting wp via (9), the additional time constant expressed as T3, can be set to: T3 + Kw1 p MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA (23) MC13110A MC13111A 3.2-57 MC13110A MC13111A The K-factor shown determines how far the additional pole frequency will be separated from wp. Selecting too small of a K-factor, the equations may provide negative capacitance or resistor values. Too large of a K-factor may not provide the maximum attenuation. By selecting R3 to be 100 k, C3 becomes known and C1 and C2 can be solved from the equations. By using equations (8) and (7), time constants T2 and T1 can be derived by selecting a phase margin. Finally, R2 follows from T2 and C2. The following pages, the loopfilter components are determined for both handset and baseset the US application based on the equations described. Choose K to be approximately five times wp (5wp). In an application, wp is chosen to be 20 times less than the reference frequency of 5.0 kHz and the phase margin has been set to 45 degrees. This provides a lock time according to (9) of about 2.0 ms (order of magnitude). With the adjacent channels spaced at least 15 kHz away, reference feedthrough at wp will not be directly disastrous but still, the additional pole may be added in the loopfilter design for added safety. In an application, wp is chosen to be 20 times less than the reference frequency of 5.0 kHz and the phase margin has been set to 45 degrees. This provides a lock time according to (9) of about 2.0 ms (order of magnitude). With the adjacent channels spaced at least 15 kHz away, reference feedthrough at wp will not be directly disastrous but still, the additional pole may be added in the loopfilter design for added safety. Figure 101. Open Loop Response Handset US with Selected Values Figure 102. Open Loop Response Baseset US with Selected Values 100 k From Phase Detector 100 k From Phase Detector To VCO To VCO 22 k 6800 .068 18 k 8200 1000 80 80 80 60 0 40 Phase Margin -40 20 1000 10000 100000 0 1000000 40 60 0 40 Phase Margin -40 -80 100 20 1000 10000 f, FREQUENCY (Hz) 100000 Figure 104. Baseset US Conditions L = 470 uH RF = 46.77 MHz VCO center = 36.075 MHz Fref = 5.0 kHz Qp = 45 degrees wp = wref / 20 radians Conditions L = 470 uH RF = 49.83 MHz VCO center = 39.135 MHz Fref = 5.0 kHz Qp = 45 degrees wp = wref / 20 radians Results Equations Results Equations Kpd = 159.2 uA/rad KVCO = 4.54 Mrad/V T2 = 1540 s T1 = 264 s T3 = 91 s (14), (15) (8) (7) with K = 7 C1 = 9.1 nF C2 = 83.5 nF R2 = 18.4 k R3 = 100 k C3 = 909.5 pF (21) (20) (18) choose: (19) (14), (15) (8) (7) with K = 7 C1 = 7.6 nF C2 = 70.9 nF R2 = 21.7 k R3 = 100 k C3 = 909.5 pF (21) (20) (18) choose: (19) MC13110A MC13111A 3.2-58 0 1000000 f, FREQUENCY (Hz) Figure 103. Handset US Kpd = 159.2 uA/rad KVCO = 3.56 Mrad/V T2 = 1540 s T1 = 264 s T3 = 91 s Phase Margin (degrees) 40 Open Loop Gain (dB) Loop Gain Phase Margin (degrees) Open Loop Gain (dB) 1000 80 Loop Gain -80 100 .082 Select C1 = 6.8 nF C2 = 68 nF R2 = 22 k R3 = 100 k C3 = 1 nf Select C1 = 8.2 nF C2 = 82 nF R2 = 18 k R3 = 100 k C3 = 1 nf MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A SERIAL PROGRAMMABLE INTERFACE Microprocessor Serial Interface The Data, Clock, and Enable ("Data", "Clk", and "EN" respectively) pins provide a MPU serial interface for programming the reference counters, the transmit and receive channel divide counters, the switched capacitor filter clock counter, and various other control functions. The "Data" and "Clk" pins are used to load data into the MC13111A shift register (Figure 109). Figure 105 shows the timing required on the "Data" and "Clk" pins. Data is clocked into the shift register on positive clock transitions. Figure 105. Data and Clock Timing Requirement tr The state of the "EN" pin when clocking data into the shift register determines whether the data is latched into the address register or a data register. Figure 107 shows the address and data programming diagrams. In the data programming mode, there must not be any clock transitions when "EN" is high. The clock can be in a high state (default high) or a low state (default low) but must not have any transitions during the "EN" high state. The convention in these figures is that latch bits to the left are loaded into the shift register first. A minimum of four "Clk" rising edge transition must occur before a negative "EN" transition will latch data or an address into a register. tf Figure 107. Microprocessor Interface Programming Mode Diagrams 90% 10% Data, Clk, EN Data MSB 8-Bit Address LSB Latch 50% EN Address Register Programming Mode Data tsuDC Data th MSB 16-Bit Data LSB Latch EN 50% Data Register Programming Mode Clk After data is loaded into the shift register, the data is latched into the appropriate latch register using the "EN" pin. This is done in two steps. First, an 8-bit address is loaded into the shift register and latched into the 8-bit address latch register. Then, up to 16-bits of data is loaded into the shift register and latched into the data latch register. It is specified by the address that was previously loaded. Figure 106 shows the timing required on the EN pin. Latching occurs on the negative EN transition. The MPU serial interface is fully operational within 100 s after the power supply has reached its minimum level during power-up (see Figure 108). The MPU Interface shift registers and data latches are operational in all four power saving modes; Inactive, Standby, Rx, and Active Modes. Data can be loaded into the shift registers and latched into the latch registers in any of the operating modes. Figure 108. Microprocessor Serial Interface Power-Up Delay Figure 106. Enable Timing Requirement 50% Clk tsuEC 50% Last Clock First Clock 2.7 V VCC tpuMPU trec 50% EN Latch 50% Previous Data Latched Data, Clk, EN MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A 3.2-59 MC13110A MC13111A Data Registers Figure 109 shows the data latch registers and addresses which are used to select each of each registers. Latch bits to the left (MSB) are loaded into the shift register first. The LSB bit must always be the last bit loaded into the shift register. Bits proceeding the register must be "0's" as shown. Rx mode with all mutes active. The reference counter is set to generate a 5.0 kHz reference frequency from a 10.24 MHz crystal. The switched capacitor filter clock counter is set properly for operation with a 10.24 MHz crystal. The Tx and Rx counter registers are set for USA handset channel frequency, number 21 (Channel 6 for previous FCC 10 Channel Band). Figure 110 shows the initial power-up states for all latch registers. Power-Up Defaults for Data Registers When the IC is first powered up, all latch registers are initialized to a defined state. The device is initially placed in the Figure 109. Microprocessor Interface Data Latch Registers Latch Address 0 0 MSB 14-b Tx Counter LSB 1. (00000001) LSB 2. (00000010) LSB 3. (00000011) Rx Mute SP Mute 4. (00000100) 5-b CD Threshold Control LSB 5. (00000101) Tx Counter Latch 0 IP3 Increase MSB 14-b Rx Counter Rx Counter Latch 0 0 U.K. HS Select U.K. BS Select MSB 12-b Reference Counter Reference Counter Latch 0 ALC Disable MPU Clk 2 Limiter Disable Clk Disable MPU Clk 1 MPU Clk 0 MSB 4-b Vol Control LSB Stdby Mode LSB MSB Rx Mode Tx Mute Mode Control Latch 0 5-b Tx Gain Control MSB LSB 5-b Rx Gain Control MSB Gain Control Latch 0 3-b Low Battery Detect Threshold Select MSB 4-b Voltage Reference Adjust LSB Tx Sbl Bypass Rx Sbl Bypass MSB 6-b Switched Capacitor Filter Clock Counter Latch LSB 6. (00000110) MSB 6-b Switched Capacitor Filter Clock Counter Latch LSB 6. (00000110) SCF Clock Dividers Latch (MC13110A only) 0 3-b Low Battery Detect Threshold Select MSB 4-b Voltage Reference Adjust LSB 0 0 SCF Clock Dividers Latch (MC13111A only) 0 0 0 0 0 0 0 0 0 3-b Test Mode 4-b 1st LO Capacitor Selection 7. (00000111) Auxillary Latch MC13110A MC13111A 3.2-60 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAA AAAAAAAAAAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAA AA AAA AAA AA AAA AA AAA AAA AA AAA AA AAA AAA AA AAA AA AAAAAAAAAAAAAA AAAAAAAAAAAAA AAAAA AAAA AA AAA AAA AA AAA AA AAA AAA AA AAA AA AAA AAA AA AAA AA AAAAA AAAA AA AAA AAA AA AAA AA AAA AAA AA AAA AA AAA AAA AA AAA AA AAAAA AAAA AA AAA AAA AA AAA AA AAA AAA AA AAA AA AAA AAA AA AAA AA AAAAA AAAA AA AAA AAA AA AAA AA AAA AAA AA AAA AA AAA AAA AA AAA AA AAAAA AAAA AA AAA AAA AA AAA AA AAA AAA AA AAA AA AAA AAA AA AAA AA AAAAA AAAA AA AAA AAA AA AAA AA AAA AAA AA AAA AA AAA AAA AA AAA AA AAAAA AAAA AA AAA AAA AA AAA AA AAA AAA AA AAA AA AAA AAA AA AAA AA AAAAA AAAA AA AAA AAA AA AAA AA AAA AAA AA AAA AA AAA AAA AA AAA AA AA AA AA AA AA AA AA AAAAA AAAA AAA AAA AAA AAA AAA AAA AAA AAA AAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAA AA AAA AAA AA AAA AA AAA AAA AA AAA AA AAA AAA AA AAA AA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA Figure 110. Latch Register Power-Up Defaults MSB LSB Register Count 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 Tx 9966 - - 1 0 0 1 1 0 1 1 1 0 1 1 1 0 Rx 7215 - - 0 1 1 1 0 0 0 0 1 0 1 1 1 1 Ref 2048 - - 0 0 1 0 0 0 0 0 0 0 0 0 0 0 Mode N/A - 0 0 0 0 1 1 0 1 1 1 0 1 1 1 1 Gain N/A - 0 1 1 1 1 0 1 1 1 1 1 0 1 0 0 SCF (MC13110A) 31 - 0 0 0 0 1 1 1 0 0 0 1 1 1 1 1 SCF (MC13111A) 31 - 0 0 0 0 1 1 1 - - 0 1 1 1 1 1 Aux N/A - - - - - - - - - 0 0 0 0 0 0 0 NOTE: 12. Bits 6 and 7 in the SCF latch register are "Don't Cares" for the MC13111A since this part does not have a scrambler. Tx and Rx Counter Registers The 14 bit Tx and Rx counter registers are used to select the transmit and receive channel frequencies. In the Rx counter there is an "IP3 Increase" bit that allows the ability to trade off increased receiver mixer performance versus reduced power consumption. With "IP3 increase" = <1>, there is about a 10 dB improvement in 1 dB compression and 3rd order intercept for both the 1st and 2nd mixers. However, there is also an increase in power supply current of 1.3 mA. The power-up default for the MC13111A is "IP3 Increase" = <0>. The register bits are shown in Figure 111. Reference Counter Register Reference Counter Figure 113 shows how the reference frequencies for the Rx and Tx loops are generated. All countries except the U.K. require that the Tx and Rx reference frequencies be identical. In this case, set "U.K. Base Select" and "U.K. Handset Select" bits to "0". Then the fixed divider is set to "1" and the Tx and Rx reference frequencies will be equal to the crystal oscillator frequency divided by the programmable reference counter value. The U.K. is a special case which requires a different reference frequency value for Tx and Rx. For U.K. base operation, set "U.K. Base Select" to "1". For U.K. handset operation, set "U.K. Handset Select" to "1". The Netherlands is also a special case. A 2.5 kHz reference frequency is used for both the Tx and Rx reference and the total divider value required is 4096. This is larger than the maximum divide value available from the 12-bit reference divider (4095). In this case, set "U.K. Base Select" to "1" and set "U.K. Handset Select" to "1". This will give a fixed divide by 4 for both the Tx and Rx reference. Then set the reference divider to 1024 to get a total divider of 4096. Figure 111. Rx and Tx Counter Register Latch Bits 0 0 MSB 14-b Tx Counter LSB Tx Counter Latch 0 IP3 Increase MSB 14-b Rx Counter LSB Rx Counter Latch Figure 112. Reference Counter Register 0 0 U.K. Handset Select U.K. Base Select MSB MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 12-b Ref Counter LSB MC13110A MC13111A 3.2-61 MC13110A MC13111A Figure 113. Reference Counter Register Programming Mode U.K. Base Tx Reference Frequency LO2 In / 25 12-b Programmable Reference / 4.0 Counter /1.0 LO2 LO2 Out U.K. Handset U.K. Base Rx Reference Frequency U.K. Handset U.K. Handset Select U.K. Base Select Tx Divider Value Rx Divider Value Application 0 0 1 1 0 1 0 1 1 25 4 4 1 4 25 4 All but U.K. and Netherlands U.K. Base Set U.K. Hand Set Netherlands Base and Hand Set AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAA AAAAA AAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAA AAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAA AAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAA AAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAA AAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAA AAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAA AAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAA AAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAA AAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAA AAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAA AAAAA Figure 114. Reference Frequency and Divider Values MC13110A MC13111A Crystal Frequency Reference Divider Value U.K. Base/ Handset Divider Reference Frequency SC Filter Clock Divider SC Filter Clock Frequency Scrambler Modulation Divider Scrambler Modulation Frequency 10.24 MHz 2048 1 5.0 kHz 31 165.16 kHz 40 4.129 kHz 10.24 MHz 1024 4 5.0 kHz 31 165.16 kHz 40 4.129 kHz 11.15 MHz 2230 1 5.0 kHz 34 163.97 kHz 40 4.099 kHz 12.00 MHz 2400 1 5.0 kHz 36 166.67 kHz 40 4.167 kHz 11.15 MHz 1784 1 6.25 kHz 34 163.97 kHz 40 4.099 kHz 11.15 MHz 446 4 6.25 kHz 34 163.97 kHz 40 4.099 kHz 11.15 MHz 446 25 1.0 kHz 34 163.97 kHz 40 4.099 kHz Figure 115. Mode Control Register 0 ALC Disable MPU Clk 2 Limiter Disable Clk Disable MPU Clk 1 4-b Volume Control MPU Clk 0 Reference Frequency Selection The "LO2 In" and "LO2 Out" pins form a reference oscillator when connected to an external parallel-resonant crystal. The reference oscillator is also the second local oscillator for the RF Receiver. Figure 114 shows the relationship between different crystal frequencies and reference frequencies for cordless phone applications in various countries. "LO2 In" may also serve as an input for an externally generated reference signal which is ac-coupled. The switched capacitor filter 6-bit programmable counter must be programmed for the crystal frequency that is selected since this clock is derived from the crystal frequency and must be held constant regardless of the crystal that is selected. The actual switched capacitor clock divider ratio is twice the programmed divider ratio due to the a fixed divide by 2.0 after the programmable counter. The scrambler mixer modulation frequency is the switched capacitor clock divided by 40 for the MC13110A. Mode Control Register The power saving modes; mutes, disables, volume control, and microprocessor clock output frequency are all MC13110A MC13111A 3.2-62 Stdby Mode Rx Mode Tx Mute Rx Mute SP Mute set by the Mode Control Register. Operation of the Control Register is explained in Figures 115 through 119. AAAAAAAAAAAAAAAA AAAAAA AA AAAAAAAAAA AAAAAAAAAAAAAAAA AAAAAA AA AAAAAAAAAA AAAAAA AA AAAAAAAAAA AA AAAAAA AAAAAAAAAA AAAAAA AA AAAAAAAAAA AAAAAA AA AAAAAAAAAA AA AAAAAA AAAAAAAAAA AAAAAAAA AAAAAAAAAA AA AAAAAA AAAAAAAAAA AAAAAA AA AAAAAAAAAA Figure 116. Mute and Disable Control Bit Descriptions ALC Disable 1 0 Automatic Level Control Disabled Normal Operation Tx Limiter Disable 1 0 Tx Limiter Disabled Normal Operation Clock Disable (MC13110A/111A) 1 0 MPU Clock Output Disabled Normal Operation Tx Mute 1 0 Transmit Channel Muted Normal Operation Rx Mute 1 0 Receive Channel Muted Normal Operation SP Mute 1 0 Speaker Amp Muted Normal Operation MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA AAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAA AAAAAAA AAAAAAAAAAAAAAAA AAAAAAA AAA AAA AAAA AAA AAAAAAA AAA AAA AAAA AAA AAAAAAA AAA AAA AAAA AAA AAAAAAA AAA AAA AAAA AAA AAAAAAA AAA AAA AAAA AAA AAAAAAA AAA AAA AAAA AAA AAAAAAA AAA AAA AAAA AAA A AA AAAAAAA AAA AAA AAAA AAA AAAAAAA AAA AAA AAAA AAA AAAAAAA AAA AAA AAAA AAA AAAAAAA AAA AAA AAAA AAA AAAAAAA AAA AAA AAAA AAA AAAAAAAAAAAAAAAA AAAAAAA AAA AAA AAAA AAA AAAAAAAAAAAAAAAA MC13110A MC13111A Power Saving Operating Modes When the MC13110A or MC13111A are used in a handset, it is important to conserve power in order to prolong battery life. There are five modes of operation for the MC13110A/MC13111A; Active, Rx, Standby, Interrupt, and Inactive. They are Active, Rx, and Standby. In the Active mode, all circuit blocks are powered. In the Rx mode, all circuitry is powered down except for those circuit sections needed to receive a transmission from the base. In the Standby and Interrupt Modes, all circuitry is powered down except for the circuitry needed to provide the clock output for the microprocessor. In the Inactive Mode, all circuitry is powered down except the MPU serial interface. Latch memory is maintained in all modes. Figure 118 shows the control register bit values for selection of each power saving mode and Figure 118 shows the circuit blocks which are powered in each of these operating modes. AAAAAAAAAAAAAAAAA AAAAAA AAAAA AAAAA AAAA AAAAAAAAAAAAAAAAA AAAAAA AAAAA AAAAA AAAA AAAAAAAAAAAAAAAAA AAAAAA AAAAA AAAAA AAAA AAAAAA AAAAA AAAAA AAAA AAAAAAAAAAAAAAAAA AAAAAA AAAAA AAAAA AAAA AAAAAA AAAAA AAAAA AAAA AAAAAA AAAAA AAAAA AAAA AAAAAA AAAAA AAAAA AAAA AAAAAA AAAAA AAAAA AAAA AAAAAAAAAAAAAAAAA AAAAAA AAAAA AAAAA AAAA AAAAAA AAAAA AAAAA AAAA AAAAAAAAAAAAAAAAA AAAAAA AAAAA AAAAA AAAA AAAAAA AAAAA AAAAA AAAA AAAAAA AAAAA AAAAA AAAA AAAAAAAAAAAAAAAAA AAAAAA AAAAA AAAAA AAAA AAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAA Figure 117. Power Saving Mode Selection Stdby Mode Bit Rx Mode Bit "CD Out/ Hardware Interrupt" Pin Power Saving Mode MC13110A/MC13111A 0 0 X Active 0 1 X Rx 1 0 X Standby 1 1 1 or High Impedance Inactive 1 1 0 Interrupt MC13110B/MC13111B [Note 14] 0 0 X Active 0 1 X Rx 1 X X Standby 1 1 0 Interrupt NOTES: 13. "X" is a don't care 14. MPU Clock Out is "Always On" Figure 118. Circuit Blocks Powered During Power Saving Modes MC13110A/MC13111A Circuit Blocks Active Rx Standby Inactive X1, 2 X2 "PLL Vref" Regulated Voltage X X X1 MPU Serial Interface X X X 2nd LO Oscillator X X X MPU Clock Output X X X RF Receiver and 1st LO VCO X X Rx PLL X X Carrier Detect X X Data Amp X X Low Battery Detect X X Tx PLL Rx and Tx Audio Paths X X NOTE: 15. In Standby and Inactive Modes, "PLL Vref" remains powered but is not regulated. It will fluctuate with VCC. Power Saving Application In some handset applications it may be desirable to power down all circuitry including the microprocessor (MPU). First put the MC13110A/MC13111A into the Inactive mode. This turns off the MPU Clock Output (see Figure 119) and disables the microprocessor. Once a command is given to switch the IC into an "Inactive" mode, the MPU Clock output will remain active for a minimum of one reference counter cycle (about 200 s) and up to a maximum of two reference counter cycles (about 400 s). This is performed in order to give the MPU adequate time to power down. An external timing circuit should be used to initiate the turn-on sequence. The "CD Out" pin has a dual function. In the Active and Rx modes it performs the carrier detect function. In the Standby and Inactive modes the carrier detect circuit is disabled and the "CD Out" pin is in a "High" state, because of an external pull-up resistor. In the Inactive mode, the "CD Out" pin is the input for the hardware interrupt function. When the "CD Out" pin is pulled "low", by the external timing circuit, the IC switches from the Inactive to the Interrupt mode. Thereby turning on the MPU Clock Output. The MPU can then resume control of the IC. The "CD Out" pin must remain low until the MPU changes the operating mode from Interrupt to Standby, Active, or Rx modes. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A 3.2-63 MC13110A MC13111A Figure 119. Power Saving Application MC13110A/ MC13111A Clk Out MPU Clk Divider Clk In SPI Port SPI Port LO2 Out Interrupt LO2 In Microprocessor VCC CD Out/ HW Interrupt External Timer Mode Active/Rx Inactive Interrupt Standby/Rx/Active MPU Initiates Mode Change MPU Initiates Inactive Mode EN External Timer Pulls Pin Low CD Out Low CD Out/Hardware Interrupt CD Turns Off Timer Output Disabled MPU Clock Out Delay after MPU selects Inactive Mode to when CD turns off. "MPU Clock Out" remains active for a minimum of one count of reference counter after "CD Out/Hardware Interrupt" pin goes high MPU "Clk Out" Divider Programming The "Clk Out" signal is derived from the second local oscillator. It can be used to drive a microprocessor (MPU) clock input. This will eliminate the need for a separate crystal to drive the MPU, thus reducing system cost. Figure 120 shows the relationship between the second LO crystal frequency and the clock output for each divide value. Figure 121 shows the "Clk Out" register bit values. With a 10.24 MHz crystal, the divide by 312.5 gives the same clock frequency as a clock crystal and allows the MPU to display the time on a LCD display without additional external components. AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA Figure 120. Clock Output Values Clock Output Divider Crystal Frequency 2 2.5 3 4 5 20 80 312.5 10.24 MHz 5.120 MHz 4.096 MHz 3.413 MHz 2.560 MHz 2.048 MHz 512 kHz 128 kHz 32.768 kHz 11.15 MHz 5.575 MHz 4.460 MHz 3.717 MHz 2.788 MHz 2.230 MHz 557 kHz 139 kHz 35.680 kHz 12.00 MHz 6.000 MHz 4.800 MHz 4.000 MHz 3.000 MHz 2.400 MHz 600 kHz 150 kHz 38.400 kHz MC13110A MC13111A 3.2-64 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA AAAAAAAAAAAAAAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAAAAAAAAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAA MC13110A MC13111A Figure 121. Clock Output Divider MPU Clk Bit #2 MPU Clk Bit #1 MPU Clk Bit #0 Clk Out Divider Value 0 0 0 2 0 0 1 3 0 1 0 4 0 1 1 5 1 0 0 2.5 1 0 1 20 1 1 0 80 1 1 1 312.5 MPU "Clk Out" Power-Up Default Divider Value The power-up default divider value is "divide by 5". This provides a MPU clock of about 2.0 MHz after initial power-up. The reason for choosing a relatively low clock frequency at initial power-up is because some microprocessors operate using a 3.0 V power supply and have a maximum clock frequency of 2.0 MHz. After initial power-up, the MPU can change the clock divider value and set the clock to the desired operating frequency. Special care was taken in the design of the clock divider to insure that the transition between one clock divider value and another is "smooth" (i.e. there will be no narrow clock pulses to disturb the MPU). MPU "Clk Out" Radiated Noise on Circuit Board The clock line running between the MC13110A or MC13111A and the microprocessor has the potential to radiate noise. Problems in the system can occur, especially if the clock is a square wave digital signal with large high frequency harmonics. In order to minimize the radiated noise, a 1000 resistor is included on-chip in series with the "Clk Out" output driver. A small capacitor or inductor with a capacitor can be connected to the "Clk Out" line on the PCB to form a one or two pole low pass filter. This filter should significantly reduce noise radiated by attenuating the high frequency harmonics on the signal line. The filter can also be used to attenuate the signal level so that it is only as large as required by the MPU clock input. To further reduce radiated noise, the PCB signal trace length should be kept to a minimum. Volume Control Programming The volume control adjustable gain block can be programmed in 2 dB gain steps from -14 dB to +16 dB. The power-up default value for the MC13110A and MC13111A is 0 dB. (see Figure 122) AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAAAAA AAAA AAAAAAA Figure 122. Volume Control Volume Control Bit #3 Volume Control Bit #2 Volume Control Bit #1 Volume Control Bit #0 Volume Control # Gain/Attenuation Amount 0 0 0 0 0 -14 dB 0 0 0 1 1 -12 dB 0 0 1 0 2 -10 dB 0 0 1 1 3 - 8 dB 0 1 0 0 4 - 6 dB 0 1 0 1 5 - 4 dB 0 1 1 0 6 - 2 dB 0 1 1 1 7 0 dB 1 0 0 0 8 2 dB 1 0 0 1 9 4 dB 1 0 1 0 10 6 dB 1 0 1 1 11 8 dB 1 1 0 0 12 10 dB 1 1 0 1 13 12 dB 1 1 1 0 14 14 dB 1 1 1 1 15 16 dB MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A 3.2-65 MC13110A MC13111A Gain Control Register The gain control register contains bits which control the Tx Voltage Gain, Rx Voltage Gain, and Carrier Detect threshold. Operation of these latch bits are explained in Figures 123, 124 and 125. than the nominal power-up default, is desired, it can be programmed through the MPU interface. Alternately, these programmable gain blocks can be used during final test of the telephone to electronically adjust for gain tolerances in the telephone system (see Figure 124). In this case, the Tx and Rx gain register values should be stored in ROM during final test so that they can be reloaded each time the IC is powered up. Tx and Rx Gain Programming The T x and R x audio signal paths each have a programmable gain block. If a Tx or Rx voltage gain, other Figure 123. Gain Control Latch Bits 0 5-b Tx Gain Control 5-b Rx Gain Control 5-b CD Threshold Control AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAA AAAA AAAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAA AAAA AAAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAA AAAA AAAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAA AAAA AAAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAA AAAA AAAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAA AAAA AAAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAA AAAA AAAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAA AAAA AAAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAA AAAA AAAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAA AAAA AAAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAA AAAA AAAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAA AAAA AAAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAA AAAA AAAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAA AAAA AAAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAA AAAA AAAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAA AAAA AAAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAA AAAA AAAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAA AAAA AAAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAA AAAA AAAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAA AAAA AAAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAA AAAA AAAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAA AAAA AAAAAAA AAAAAA AAAAAA AAAAA AAAAAA AAAAAA AAAA AAAAAAA Figure 124. Tx and Rx Gain Control Gain Control Bit #4 Gain Control Bit #3 Gain Control Bit #2 Gain Control Bit #1 Gain Control Bit #0 Gain Control # Gain/Attenuation Amount - - - - - <6 -9 dB 0 0 1 1 0 6 -9 dB 0 0 1 1 1 7 -8 dB 0 1 0 0 0 8 -7 dB 0 1 0 0 1 9 -6 dB 0 1 0 1 0 10 -5 dB 0 1 0 1 1 11 -4 dB 0 1 1 0 0 12 -3 dB 0 1 1 0 1 13 -2 dB 0 1 1 1 0 14 -1 dB 0 1 1 1 1 15 0 dB 1 0 0 0 0 16 1 dB 1 0 0 0 1 17 2 dB 1 0 0 1 0 18 3 dB 1 0 0 1 1 19 4 dB 1 0 1 0 0 20 5 dB 1 0 1 0 1 21 6 dB 1 0 1 1 0 22 7 dB 1 0 1 1 1 23 8 dB 1 1 0 0 0 24 9 dB 1 1 0 0 1 25 10 dB - - - - - >25 10 dB MC13110A MC13111A 3.2-66 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A Carrier Detect Threshold Programming The "CD Out" pin gives an indication to the microprocessor if a carrier signal is present on the selected channel. The nominal value and tolerance of the carrier detect threshold is given in the carrier detect specification section of this document. If a different carrier detect threshold value is desired, it can be programmed through the MPU interface as shown in Figure 125 below. Alternately, the carrier detect threshold can be electronically adjusted during final test of the telephone to reduce the tolerance of the carrier detect threshold. This is done by measuring the threshold and then by adjusting the threshold through the MPU interface. In this case, it is necessary to store the carrier detect register value in ROM so that the CD register can be reloaded each time the combo IC is powered up. If a preamp is used before the first mixer it may be desirable to scale the carrier detect range by connecting an external resistor from the "RSSI" pin to ground. The internal resistor is 187 k. AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAAAA AAAAAA AAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAAAA Figure 125. Carrier Detect Threshold Control CD Bit #4 CD Bit #3 CD Bit #2 CD Bit #1 CD Bit #0 CD Control # Carrier Detect Threshold 0 0 0 0 0 0 - 20 dB 0 0 0 0 1 1 -19 dB 0 0 0 1 0 2 -18 dB 0 0 0 1 1 3 -17 dB 0 0 1 0 0 4 -16 dB 0 0 1 0 1 5 -15 dB 0 0 1 1 0 6 -14 dB 0 0 1 1 1 7 -13 dB 0 1 0 0 0 8 -12 dB 0 1 0 0 1 9 -11 dB 0 1 0 1 0 10 -10 dB 0 1 0 1 1 11 - 9 dB 0 1 1 0 0 12 - 8 dB 0 1 1 0 1 13 -7 dB 0 1 1 1 0 14 - 6 dB 0 1 1 1 1 15 - 5 dB 1 0 0 0 0 16 - 4 dB 1 0 0 0 1 17 - 3 dB 1 0 0 1 0 18 - 2 dB 1 0 0 1 1 19 -1 dB 1 0 1 0 0 20 0 dB 1 0 1 0 1 21 1 dB 1 0 1 1 0 22 2 dB 1 0 1 1 1 23 3 dB 1 1 0 0 0 24 4 dB 1 1 0 0 1 25 5 dB 1 1 0 1 0 26 6 dB 1 1 0 1 1 27 7 dB 1 1 1 0 0 28 8 dB 1 1 1 0 1 29 9 dB 1 1 1 1 0 30 10 dB 1 1 1 1 1 31 11 dB MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A 3.2-67 MC13110A MC13111A Clock Divider/Voltage Adjust Register This register controls the divider value for the programmable switched capacitor filter clock divider, the low battery detect threshold select, the voltage reference adjust, and the scrambler bypass mode (MC13110A only). Operation is explained in Figures 126 through 133. Figure 128 describes the operation of the Tx and Rx Audio bits. Note the power-up default bit is set to <0>, which is the scrambler bypass mode. The non-programmable threshold mode is only available in the 52 QFP package. In this mode, there are two low battery detect comparators and the threshold values are set by external resistor dividers which are connected to the REF1 and REF2 pins. In the programmable threshold mode, several different threshold levels may be selected through the "Low Battery Detect Threshold Register" as shown in Figure 127. The power-on default value for this register is <0,0,0> and is the non-programmable mode. Figure 129 shows equivalent schematics for the programmable and non-programmable operating modes. Low Battery Detect The low battery detect circuit can be operated in programmable and non-programmable threshold modes. Figure 126. Clock Divider/Voltage Adjust Latch Bits 0 3-b Low Battery Detect Threshold Select MSB 4-b Voltage Reference Adjust LSB Tx Sbl Bypass Rx Sbl Bypass MSB 6-b Switched Capacitor Filter Clock Counter Latch LSB 0 0 MSB 6-b Switched Capacitor Filter Clock Counter Latch LSB (MC13110A) 0 3-b Low Battery Detect Threshold Select MSB 4-b Voltage Reference Adjust LSB (MC13111A) AAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAA AAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAA AAAAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAA AAAAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAA AAAAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAA AAAAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAA AAAAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAA AAAAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAA AAAAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAA AAAAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAA AAAAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAA AAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAA AAAAA AAAAA AAAAAAA AAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AA AAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AA AAAAAAAAAAAAAA AA AAAAAA AAAAAAAAAAAAAA AAAAAAAA AAAAAAAAAAAAAA AAAAAA AAAAAAAAAAAAAA AA Figure 127. Low Battery Detect Threshold Selection Low Battery Detect Threshold Select Bit #2 Low Battery Detect Threshold Select Bit #1 Low Battery Detect Threshold Select Bit #0 Select # 0 0 0 0 Non-Programmable 0 0 1 1 Programmable 2.850 0 1 0 2 Programmable 2.938 0 1 1 3 Programmable 3.025 1 0 0 4 Programmable 3.200 1 0 1 5 Programmable 3.288 1 1 0 6 Programmable 3.375 1 1 1 7 Programmable 3.463 Operating Mode Nominal Low Battery Detect Threshold Value (V) N/A NOTE: 17. Nominal Threshold Value is before electronic adjustment. Figure 128. MC13110A Bypass Mode Bit Description (MC13110A Only) MC13110A MC13111A 3.2-68 Tx Scrambler 1 Tx Scrambler Post-Mixer LPF and Mixer Bypassed Bypass 0 Normal Operation with Tx Scrambler Rx Scrambler 1 Rx Scrambler Post-Mixer LPF and Mixer Bypassed Bypass 0 Normal Operation Rx Scrambler MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A Figure 129. Low Battery Detect Equivalent Schematics Ref2 BD2 Out 50 16 Ref 1 BD1 Out 51 VB 14 Vref 52 Non-Programmable Threshold Mode: 52-QFP Package VB VCC Audio VCC Audio 21 23 BD Out BD2 Out 14 16 VB Vref 47 Programmable Threshold Mode: 48-LQFP Package Vref 52 Programmable Threshold Mode: 52-QFP Package MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A 3.2-69 MC13110A MC13111A Voltage Reference Adjustment An internal 1.5 V bandgap voltage reference provides the voltage reference for the "BD1 Out" and "BD2 Out" low battery detect circuits, the "PLL Vref" voltage regulator, the "VB" reference, and all internal analog ground references. The initial tolerance of the bandgap voltage reference is 6%. The tolerance of the internal reference voltage can be improved to 1.5% through MPU serial interface programming. During final test of the telephone, the battery detect threshold is measured. Then, the internal reference voltage value is adjusted electronically through the MPU serial interface to achieve the desired accuracy level. The voltage reference register value should be stored in ROM during final test so that it can be reloaded each time the MC13110A or MC13111A is powered up (see Figure 130). Switched Capacitor Filter Clock Programming A block diagram of the switched capacitor filter clock divider is show in Figure 131. There is a fixed divide by 2 after the programmable divider. The switched capacitor filter clock value is given by the following equation; (SCF Clock) = F(2nd LO) / (SCF Divider Value * 2). The scrambler modulation clock frequency (SMCF) is proportional to the SCF clock. The following equation defines its value: SMCF = (SCF Clock)/40 The SCF divider should be set to a value which brings the SCF Clock as close to 165.16 kHz as possible. This is based on the 2nd LO frequency which is chosen in Figure 114. 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Bandgap Voltage Reference Adjustment Vref Adj. Vref Adj. Vref Adj. Vref Adj. Vref Adj. Bit #3 Bit #2 Bit #1 Bit #0 # Figure 131. SCF Clock Divider Circuit Vref Adj. Amount 0 0 0 0 0 -9.0% 0 0 0 1 1 -7.8% 0 0 1 0 2 -6.6% 0 0 1 1 3 -5.4% 0 1 0 0 4 -4.2% 0 1 0 1 5 -3.0% 0 1 1 0 6 -1.8% 0 1 1 1 7 -0.6% 1 0 0 0 8 +0.6 % 1 0 0 1 9 +1.8 % 1 0 1 0 10 +3.0 % 1 0 1 1 11 +4.2 % 1 1 0 0 12 +5.4 % 1 1 0 1 13 +6.6 % 1 1 1 0 14 +7.8 % 1 1 1 1 15 +9.0 % LO2 In 6-b Programmable SCF Clock Counter 2nd LO Crystal Divide By 2.0 SCF Clock LO2 Out MC13110A only Divide By 40 Scrambler Modulation Clock Corner Frequency Programming for MC13110A and MC13111A Four different corner frequencies may be selected by programming the SCF Clock divider as shown in Figures 132 and 133. It is important to note, that all filter corner frequencies will change proportionately with the SCF Clock Frequency and Scrambler Modulation Frequency. The power-up default SCF Clock divider value is 31. Figure 132. Corner Frequency Programming for 10.240 MHz 2nd LO MC13110A MC13111A SCF Clock Divider Total Divide Value 29 30 31 32 58 60 62 64 SCF Clock Freq. (kHz) Rx Upper Corner Frequency (kHz) Tx Upper Corner Frequency (kHz) Scrambler Modulation Frequency (Clk/40) (kHz) Scrambler Lower Corner Frequency (Hz) Scrambler Upper Corner Frequency (kHz) 176.55 170.67 165.16 160.00 4.147 4.008 3.879 3.758 3.955 3.823 3.700 3.584 4.414 4.267 4.129 4.000 267.2 258.3 250.0 242.2 3.902 3.772 3.650 3.536 NOTE: 18. All filter corner frequencies have a tolerance of 3%. 19. Rx and Tx Upper Corner Frequencies are the same corner frequencies for the MC13110A in scrambler bypass MC13110A MC13111A 3.2-70 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAAAA AAAAA AAAAAA AAAAAA AAAAAA AAAAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAAAA AAAAA AAAAAA AAAAAA AAAAAA AAAAA AAAA AAAA AAAAAA AAAAA AAAAAA AAAAAA AAAAAA AAAAA AAAA AAAA AAAAAA AAAAA AAAAAA AAAAAA AAAAAA AAAAA AAAA AAAA AAAAAA AAAAA AAAAAA AAAAAA AAAAAA AAAAA AAAA AAAA AAAAAA AAAAA AAAAAA AAAAAA AAAAAA AAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAA AAAAAA AAAAA AAAAAA AAAAAA AAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA MC13110A MC13111A Figure 133. Corner Frequency Programming for 11.15 MHz 2nd LO MC13110A MC13111A SCF Clock Divider Total Divide Value 32 33 34 35 64 66 68 70 SCF Clock Freq. (kHz) Rx Upper Corner Frequency (kHz) Tx Upper Corner Frequency (kHz) Scrambler Modulation Frequency (Clk/40) (kHz) Scrambler Lower Corner Frequency (Hz) Scrambler Upper Corner Frequency (kHz) 174.22 168.94 163.97 159.29 4.092 3.968 3.851 3.741 3.903 3.785 3.673 3.568 4.355 4.223 4.099 3.982 263.7 255.7 248.2 241.1 3.850 3.733 3.624 3.520 NOTES: 20. All filter corner frequencies have a tolerance of 3%. 21. Rx and Tx Upper Corner Frequencies are the same corner frequencies for the MC13110A in scrambler bypass Figure 134. Auxiliary Register Latch Bits 0 0 0 0 0 0 0 0 0 MSB 3-b Test Mode LSB MSB 4-b 1st LO Capacitor Selection LSB AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAA AAA AAA AAA AAAAAAAAAA AAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAA AAA AAA AAA AAAAAAAAAA AAAAA AAAAAAAAAAAAA AAA AAA AAA AAA AAAAAAAAAA AAAAA AAAAAAAAAAAAA AAA AAA AAA AAA AAAAAAAAAA AAAAA AAAAAAAAAAAAA AAA AAA AAA AAA AAAAAAAAAA AAAAA AAAAAAAAAAAAA AAA AAA AAA AAA AAAAAAAAAA AAAAA AAAAAAAAAAAAA AAA AAA AAA AAA AAAAAAAAAA AAAAA AAAAAAAAAAAAA AAA AAA AAA AAA AAAAAAAAAA AAAAA AAAAAAAAAAAAA AAA AAA AAA AAA AAAAAAAAAA AAAAA AAAAAAAAAAAAA Figure 135. Digital Test Mode Description Counter Under Test or Test Mode Option "Tx VCO" Input Signal TM # TM 2 TM 1 TM 0 0 0 0 0 Normal Operation 1 0 0 1 Rx Counter 0 to 2.5 V Input Frequency/Rx Counter Value 2 0 1 0 Tx Counter 0 to 2.5 V Input Frequency/Tx Counter Value 3 0 1 1 Reference Counter + Divide by 4/25 0 to 2.5 V Input Frequency/Reference Counter Value * 100 4 1 0 0 SC Counter 0 to 2.5 V Input Frequency/SC Counter Value * 2 5 1 0 1 ALC Gain = 10 Option N/A N/A 6 1 1 0 ALC Gain = 25 Option N/A N/A Auxiliary Register The auxiliary register contains a 4-bit First LO Capacitor Selection latch and a 3-bit Test Mode latch. Operation of these latch bits are explained in Figures 134, 135 and 136. Test Modes Test modes are be selected through the 3-bit Test Mode Register. In test mode, the "Tx VCO" input pin is multiplexed to the input of the counter under test. The output of the counter under test is multiplexed to the "Clk Out" output pin so that each counter can be individually tested. Make sure test mode bits are set to "0's" for normal operation. Test mode operation is described in Figure 135. During normal operation, the "Tx VCO" input can be a minimum of 200 mVpp at 80 MHz and should be AC coupled. Input signals should be standard logic levels of 0 to 2.5 V and a maximum frequency of 16 MHz. First Local Oscillator Programmable Capacitor Selection There is a very large frequency difference between the minimum and maximum channel frequencies in the 25 Channel U.S. standard. The internal varactor adjustment >200 mVpp "Clk Out" Output Expected - range is not large enough to accommodate this large frequency span. An internal capacitor with 15 programmable capacitor values can be used to cover the 25 channel frequency span without the need to add external capacitors and switches. The programmable internal capacitor can also be used to eliminate the need to use an external variable capacitor to adjust the 1st LO center frequency during telephone assembly. Figure 32 shows the schematic of the 1st LO tank circuit. Figure 136 shows the register control bit values. The internal programmable capacitor is composed of a matrix bank of capacitors that are switched in as desired. Programmable capacitor values between about 0 and 16 pF can be selected in steps of approximately 1.1 pF. The internal parallel resistance values in the table can be used to calculate the quality factor (Q) of the oscillator if the Q of the external inductor is known. The temperature coefficient of the varactor is 0.08%/C. The temperature coefficient of the internal programmable capacitor is negligible. Tolerance on the varactor and programmable capacitor values is 15%. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A 3.2-71 MC13110A MC13111A AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAA AAA AAAA AAAA AAAAA AAAAAA AAAAAA AAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAA AAA AAAA AAAA AAAAA AAAAAA AAAAAA AAAAAA AAAA AAAA AAA AAAA AAAA AAAAA AAAAAA AAAAAA AAAAAA AAAA AAAA AAA AAAA AAAA AAAAA AAAAAA AAAAAA AAAAAA AAAA AAAA AAA AAAA AAAA AAAAA AAAAAA AAAAAA AAAAAA AAAA AAAA AAA AAAA AAAA AAAAA AAAAAA AAAAAA AAAAAA AAAA AAAA AAA AAAA AAAA AAAAA AAAAAA AAAAAA AAAAAA AAAA AAAA AAA AAAA AAAA AAAAA AAAAAA AAAAAA AAAAAA AAAA AAAA AAA AAAA AAAA AAAAA AAAAAA AAAAAA AAAAAA AAAA AAAA AAA AAAA AAAA AAAAA AAAAAA AAAAAA AAAAAA AAAA AAAA AAA AAAA AAAA AAAAA AAAAAA AAAAAA AAAAAA AAAA AAAA AAA AAAA AAAA AAAAA AAAAAA AAAAAA AAAAAA AAAA AAAA AAA AAAA AAAA AAAAA AAAAAA AAAAAA AAAAAA AAAA AAAA AAA AAAA AAAA AAAAA AAAAAA AAAAAA AAAAAA AAAA AAAA AAA AAAA AAAA AAAAA AAAAAA AAAAAA AAAAAA AAAA AAAA AAA AAAA AAAA AAAAA AAAAAA AAAAAA AAAAAA AAAA AAAA AAA AAAA AAAA AAAAA AAAAAA AAAAAA AAAAAA AAAA AAAA AAA AAAA AAAA AAAAA AAAAAA AAAAAA AAAAAA AAAA AAAA AAA AAAA AAAA AAAAA AAAAAA AAAAAA AAAAAA Figure 136. First Local Oscillator Internal Capacitor Selection Varactor Value over 0.3 to 2.5 V (pF) Equivalent Internal Parallel Resistance at 40 MHz (k) Equivalent Internal Parallel Resistance at 51 MHz (k) 1st LO Cap. Bit 3 1st LO Cap. Bit 2 1st LO Cap. Bit 1 1st LO Cap. Bit 0 1st LO Cap. Select Internal Programmable Capacitor Value (pF) 0 0 0 0 0 0.0 9.7 to 5.8 1200 736 0 0 1 0 2 0.6 9.7 to 5.8 79.3 48.8 0 0 0 1 1 1.7 9.7 to 5.8 131 80.8 0 1 0 1 5 2.8 9.7 to 5.8 31.4 19.3 0 1 1 0 6 3.9 9.7 to 5.8 33.8 20.8 0 1 1 1 7 4.9 9.7 to 5.8 66.6 41 0 1 0 0 4 6.0 9.7 to 5.8 49.9 30.7 0 0 1 1 3 7.1 9.7 to 5.8 40.7 25.1 1 0 0 0 8 8.2 9.7 to 5.8 27.1 16.7 1 0 0 1 9 9.4 9.7 to 5.8 21.6 13.3 1 0 1 0 10 10.5 9.7 to 5.8 20.5 12.6 1 0 1 1 11 11.6 9.7 to 5.8 18.6 11.5 1 1 0 0 12 12.7 9.7 to 5.8 17.2 10.6 1 1 0 1 13 13.8 9.7 to 5.8 15.8 9.7 1 1 1 0 14 14.9 9.7 to 5.8 15.3 9.4 1 1 1 1 15 16.0 9.7 to 5.8 14.2 8.7 MC13110A MC13111A 3.2-72 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A OTHER APPLICATIONS INFORMATION PCB Board Lay-Out Considerations The ideal printed circuit board (PCB) lay out would be double-sided with a full ground plane on one side. The ground plane would be divided into separate sections to prevent any audio signal from feeding into the first local oscillator via the ground plane. Leaded components, can likewise, be inserted on the ground plane side to improve shielding and isolation from the circuit side of the PCB. The opposite side of the PCB is typically the circuit side. It has the interconnect traces and surface mount components. In cases where cost allows, it may be beneficial to use multi-layer boards to further improve isolation of components and sensitive sections (i.e. RF and audio). For the CT-0 band, it is also permissible to use single-sided PC layouts, but with continuous full ground fill in and around the components. The proper placement of certain components specified in the application circuit may be very critical. In a lay-out design, these components should be placed before the other less critical components are inserted. It is also imperative that all RF paths be kept as short as possible. Finally, the MC13110A and MC13111A ground pins should be tied to ground at the pins and VCC pins should have adequate decoupling to ground as close to the IC as possible. In mixed mode systems where digital and RF/Analog circuitry are present, the VCC and VEE buses need to be ac-decoupled and isolated from each other. The design must also take great caution to avoid interference with low level analog circuits. The receiver can be particularly susceptible to interference as they respond to signals of only a few microvolts. Again, be sure to keep the dc supply lines for the digital and analog portions separate. Avoid ground paths carrying common digital and analog currents, as well. Component Selection The evaluation circuit schematics specify particular components that were used to achieve the results shown in the typical curves and tables, but alternate components should give similar results. The MC13110A and MC13111A IC are capable of matching the sensitivity, IMD, adjacent channel rejection, and other performance criteria of a multi-chip analog cordless telephone system. For the most part, the same external components are used as in the multi-chip solution. VB and PLL Vref VB is an internally generated bandgap voltage. It functions as an ac reference point for the operational amplifiers in the audio section as well as for the battery detect circuitry. This pin needs to be sufficiently filtered to reduce noise and prevent crosstalk between Rx audio to Tx audio signal paths. A practical capacitor range to choose that will minimize crosstalk and noise relative to start up time is 0.5 f to 10 f. The start time for a 0.5 f capacitor is approximately 5.0 ms, while a 10f capacitor is about 10 ms. The "PLL Vref" pin is the internal supply voltage for the Rx and Tx PLL's. It is regulated to a nominal 2.5 V. The "VCC Audio" pin is the supply voltage for the internal voltage regulator. Two capacitors with 10 F and 0.01 F values must be connected to the "PLL Vref" pin to filter and stabilize this regulated voltage. The "PLL Vref" pin may be used to power other IC's as long as the total external load current does not exceed 1.0 mA. The tolerance of the regulated voltage is initially 8.0%, but is improved to 4.0% after the internal Bandgap voltage reference is adjusted electronically through the MPU serial interface. The voltage regulator is turned off in the Standby and Inactive modes to reduce current drain. In these modes, the "PLL Vref" pin is internally connected to the "VCC Audio" pin (i.e., the power supply voltage is maintained but is now unregulated). It is important to note that the momentary drop in voltage below 2.5 V during this transition may affect initial PLL lock times and also may trigger the reset. To prevent this, the PLL Vref capacitor described above should be kept the same or larger than the VB capacitor, say 10 f as shown in the evaluation and application diagrams. DC Coupling Choosing the right coupling capacitors for the compander is also critical. The coupling capacitors will have an affect on the audio distortion, especially at lower audio frequencies. A useful capacitor range for the compander timing capacitors is 0.1 f to 1.0 f. It is advised to keep the compander capacitors the same value in both the handset and baseset applications. All other dc coupling capacitors in the audio section will form high pass filters. The designer should choose the overall cut off frequency (-3.0 dB) to be around 200 Hz. Designing for lower cut off frequencies may add unnecessary cost and capacitor size to the design, while selecting too high of a cut off frequency may affect audio quality. It is not necessary or advised to design each audio coupling capacitors for the same cut off frequency. Design for the overall system cut off frequency. (Note: Do not expect the application, evaluation, nor production test schematics to necessarily be the correct capacitor selections.) The goals of these boards may be different than the systems approach a designer must consider. For the supply pins (VCC Audio and VCC RF) choose a 10 f in parallel with a high quality 0.01 f capacitor. Separation of the these two supply planes is essential, too. This is to prevent interference between the RF and audio sections. It is always a good design practice to add additional coupling on each supply plane to ground as well. The IF limiter capacitors are recommended to be 0.1 f. Smaller values lower the gain of the limiter stage. The -3.0 dB limiting sensitivity and SINAD may be adversely affected. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A 3.2-73 MC13110A MC13111A 3.2-74 BNC BNC BNC Scr Out E Out SA Out Vcap Ctrl LO 2 In RF In 2 RF In1 C42a txt C52 10 R42b txt C42b txt R4b txt C4 txt C48 0.47 C47 0.47 C3 0.1 Data 9 EN 10 R10 10 k Clk 11 Det Out 25 27 Q Coil 26 RSSI C Cap 18 C In 19 Amp Out 20 Tx In 21 DA In 22 VCC Audio 23 Rx Audio In 24 28 Lim Out Rx PD C1 txt XC txt C2 txt 52 VB LO2 LO2 In Out 1 2 PLL Vref Tx PD C5b 10 C5a 0.01 Tx VCO Connector Controllor R9 10 k R13 100 k VCC Clk Out CD Out R11 10 k Clk CD BD1 14 Out Out Out 12 13 DA Out 15 Gnd Tx PLL VCO 7 8 29 VCC RF C28 txt L1 txt 51 Ref 1 Tx PD 6 30 Lim C2 R28 txt BD2 Out 16 PLL Vref 5 31 Lim C1 C30 0.1 50 Ref 2 Rx PD 4 C31 0.1 32 Lim In MC13110A MC13111A 34 33 Mix 2 SGnd In RF F2 txt C35 0.01 Mix 2 Out Lim In Tx Out 17 Vag 3 35 Mix 2 Out R34 txt BNC 49 Scr Out 48 E In 47 E Cap 46 E Out 45 SA In 44 SA Out 43 Gnd Audio 42 Vcap Ctrl 36 Gnd RF F1 txt C37 0.01 BNC R37 txt 39 38 37 Mix 1 Mix 1 Mix 1 In 1 In 2 Out 40 LO1 In C40 txt 41 LO1 Out C46 0.1 R4a txt R50b 100 k R51b 100 k R42a txt R50a 110 k VCC VCC R46 47 k R45 47 k T2-L2 txt R51a 82 k VCC C45 220 p C44 47 R44 150 R40 49.9 R39 49.9 C39 0.01 T1 txt C38 0.01 Mix1 Out Mix 2 In Figure 138. Evaluation Board Schematic C19 0.1 R14 100 k R16 100 k C18 0.47 R20 47 k C23a 0.01 C24 0.01 C26 0.047 C53 1000 C55 10 VCC VCC VCC R21 47 k C21 0.1 C23b 10 C20 220 p C54 0.01 R53 47 txt: see text BD 1 Out DA Out BD 2 Out Tx Out Amp Out Tx In DA In BNC Det Out RSSI Gnd VCC MC13110A MC13111A APPENDIX A Figure 137. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A APPENDIX A Figure 138. Evaluation Board Bill of Materials for U.S. and French Application USA Application Handset Comp. Number RF (50 ) RF Matched French Application Base RF Crystal (50 ) RF Ceramic (50 ) RF Matched INPUT MATCHING T1 n.m. Toko 1:5 292GNS-765A0 n.m. n.m. Toko 1:5 292GNS-765A0 C38 0.01 n.m. 0.01 0.01 n.m. C39 0.01 n.m. 0.01 0.01 n.m. Ceramic Ceramic Crystal Ceramic Ceramic R37 0 0 1.2 k 0 0 R34 360 360 3.01 k 360 360 4 Element Murata E 4 Element Murata E 4 Element Murata G 4 Element Murata G 4 Element Murata G Q Coil Toko 7MCS-8128Z Q Coil Toko 7MCS-8128Z Ceramic Murata CDBM 450C34 Ceramic Murata CDBM 450C34 Ceramic Murata CDBM 450C34 R28 22.1 k 22.1 k 2.7 k 2.7 k 2.7 k C28 10 p 10 p 390 p 390 p 390 p Xtal 10.24 C1 = 10 p 10.24 C1 = 10 p 11.15 C1 = 18 p 11.15 C1 = 18 p 11.15 C1 = 18 p C2 18 p 18 p 33 p 33 p 33 p C1 5-25 p 5-25 p 15 p + 5-25 p 15 p + 5-25 p 15 p + 5-25 p 0.47 Toko T1370 0.47 Toko T1370 0.22 Toko T1368 0.22 Toko T1368 0.22 Toko T1368 HS: 27 pF BS: 22 pF HS: 27 pF BS: 22 pF BS: 100 p HS: 68 pF BS: 100 p HS: 68 pF BS: 100 p HS: 68 pF 10.7 MHz FILTER F1 450 kHz FILTER F2 DEMODULATOR L1 OSCILLATOR FIRST LO L2 C40 HS/BS LOOP FILTER HANDSET/BASESET R4a HS: 0 BS: 0 HS: 0 BS: 0 HS: 0 BS: 0 HS: 0 BS: 0 HS: 0 BS: 0 R4b HS: 0 BS: 0 HS: 0 BS: 0 HS: 0 BS: 0 HS: 0 BS: 0 HS: 0 BS: 0 C4 HS: 6800 BS: 8200 HS: 6800 BS: 8200 HS: 8600 BS: 6800 HS: 8600 BS: 6800 HS: 8600 BS: 6800 R42a HS: 100 k BS: 100 k HS: 100 k BS: 100 k HS: 100 k BS: 100 k HS: 100 k BS: 100 k HS: 100 k BS: 100 k R42b HS: 22 k BS: 18 k HS: 22 k BS: 18 k HS: 18 k BS: 22 k HS: 18 k BS: 22 k HS: 18 k BS: 22 k C42a HS: 1000 BS: 1000 HS: 1000 BS: 1000 HS: 1000 BS: 1000 HS: 1000 BS: 1000 HS: 1000 BS: 1000 C42b HS: 0.068 BS: 0.082 HS: 0.068 BS: 0.082 HS: 0.082 BS: 0.068 HS: 0.082 BS: 0.068 HS: 0.082 BS: 0.068 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A 3.2-75 Speaker SP1 150-300 Tx RF-In R x A n t Gnd + G n d G n d T x 3 4 5 6 Gnd C6 47 F 1 2 G n d Duplexer VCC -A T1 C4 0.01 44 43 42 41 40 Ref 2 Scr Out E In Ecap E Out SA In 1000 100 k 0.068 18 k 0.1 8200 C18 5.0-25 Gnd C17 X1 18 10.24 1 Ref 1 L O VB 2 I n 52 C14 10 F VB 50 C13 49 C12 48 Gnd Audio SA Out FL1 2 1 3 2 1 FL2 3 R36 330 VCC-RF 0.10 C70 10 R34 22 k Gnd 47 P35 C22 0.01 4 P D 3 V a g R x R F G n d 2 L O 2 O u t M i x 1 O u t 5 S G N D R F I n L i m 6 P D T x 7 C l k E N D a t a 30 Gnd + 9 O u t R F C 2 C 1 CD Out BD 1 Out DA Out BD 2 Out Tx Out C Cap C In Amp Out Tx In DA In VCC Audio Rx Audio In Det Out Q Coil RSSI 14 15 16 17 Gnd R17 1.0 k + C25 22 F R21 Tx VCO R18 680 + R19 18 k 10 k Gnd C26 4.7 F R22 10 k 100 k R24 100 k 0.47 19 18 C29 C28 27 k R28 10 F C88 0.15 Tx VT VCC R25 100 k Gnd C7 10 C33 Gnd 3300 27 k R29 C84 0.01 C31 Gnd 0.047 VCC-A R31 47 R26 Gnd + Electret Mic Gnd 10 F VCC Mic1 C32 R27 1.0 k 3.9 k Legend: If 1, then capacitor value = pF If <1, then capacitor value = F Clk Out Clk EN Data Car-Detect Low Batt R x Data Batt Dead R30 680 k 1000 C87 47 k R33 Gnd VCC -A Tx Audio 33 0.1 C35 0.01 R32 8.2 k C86 0.01 RSSI 0.047 C34 21 22 23 24 25 26 10 11 12 13 R23 O u t C l k L i m V C C L i m L i m 8 T x V C O R16 C27 10 P L L G n d IC1 MC13110A MC13111A M i x 2 I n + C23 C24 10 F 3.3 F V r e f P L L M i x 2 O u t C89 10 F C71 + C72 0.01 1000 20 T2 39 38 37 36 35 34 33 32 31 30 29 28 27 Mix 1 In 1 M i LO1 In x 1 LO1 Out I n 2 Vcap Ctrl 82 k C16 0.1 R13 R11 100 k 100 k VCC -A 0.47 C9 45 R7 47 k 220 46 0.47 47 L3 0.47H R4 220 S2 S1 51 C15 47 k C10 0.1 R8 C5 22 R1 33 k P2 Q1 8519N MPSH10 P3 P1 Gnd R12 R10 110 k 0.1 C2 R2 100 k VCC-RF 0.1 C3 0.033 C19 R3 220 C74 C73 0.10 R20 8128Z RF Input 6800 MC13110A MC13111A 3.2-76 10 k Figure 139. C30 Figure 140. Basic Cordless Telephone Transceiver Application Circuit MC13110A MC13111A APPENDIX B APPLICATIONS CIRCUIT MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13110A MC13111A APPENDIX B Figure 140. Basic Cordless Telephone Transceiver Application Circuit (continued) VCC + C57 2.2 F C56 0.1 Batt1 L6 56 H VRx V+ C54 + 10 F V- Gnd VCC -RF C55 0.22 C53 0.01 Gnd VCC -A + C58 10 F Gnd Gnd C59 180 C49 Tx VT 2.0 Tx Audio U5 C37 C60 0.1 F 6800 R51 2 3 4 C38 8.0 R37 22 k 5 6 7 R39 110 k 8 Tx Data Variable Reactance Output RF Osc Decoupling RF Osc Modulator Input Mic Amp Output Mic Amp Input Gnd IC2 MC2833D 1 110 k 1 C48 120 R54 100 k R53 68 k L4 0.22 H Tr 2 Base Tr 2 Emitter Tr 2 Collector Tr 1 Emitter VCC Tr 1 Base Tr 1 Collector C40 10 R41 27 k RF Output 16 C46 C47 36 15 36 C45 10 Tx VCO 1.5 k 12 R49 100 11 C44 10 2109 VR2 R50 14 13 2 R45 R47 75 k 0.22 H L5 4700 VCC R46 220 k Gnd C50 110 0.022 C43 9 R44 51 P1 Cx P2 7.5 P3 R42 91 k MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA T3 S1 S2 13630 C51 C41 51 51 110 0.022 R43 Tx RF-In C52 110 0.022 MC13110A MC13111A 3.2-77 MC13110A MC13111A APPENDIX C - MEASUREMENT OF COMPANDER ATTACK/DECAY TIME This measurement definition is based on EIA/CCITT recommendations. Compressor Attack Time For a 12 dB step up at the input, attack time is defined as the time for the output to settle to 1.5X of the final steady state value. Compressor Decay Time For a 12 dB step down at the input, decay time is defined as the time for the input to settle to 0.75X of the final steady state value. Expander Attack For a 6.0 dB step up at the input, attack time is defined as the time for the output to settle to 0.57X of the final steady state value. Expander Decay For a 6.0 dB step down at the input, decay time is defined as the time for the output to settle to 1.5X of the final steady state value. 6.0 dB Input 12 dB 0 mV Input 0 mV Decay Time Attack Time Attack Time Decay Time 0.57X Final Value 1.5X Final Value 1.5X Final Value Output Output 0.75X Final Value 0 mV 0 mV MC13110A MC13111A 3.2-78 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS FM Communications Receivers The MC13135/MC13136 are the second generation of single chip, dual conversion FM communications receivers developed by Motorola. Major improvements in signal handling, RSSI and first oscillator operation have been made. In addition, recovered audio distortion and audio drive have improved. Using Motorola's MOSAIC 1.5 process, these receivers offer low noise, high gain and stability over a wide operating voltage range. Both the MC13135 and MC13136 include a Colpitts oscillator, VCO tuning diode, low noise first and second mixer and LO, high gain limiting IF, and RSSI. The MC13135 is designed for use with an LC quadrature detector and has an uncommitted op amp that can be used either for an RSSI buffer or as a data comparator. The MC13136 can be used with either a ceramic discriminator or an LC quad coil and the op amp is internally connected for a voltage buffered RSSI output. These devices can be used as stand-alone VHF receivers or as the lower IF of a triple conversion system. Applications include cordless telephones, short range data links, walkie-talkies, low cost land mobile, amateur radio receivers, baby monitors and scanners. * * * * * * * * * DUAL CONVERSION NARROWBAND FM RECEIVERS P SUFFIX PLASTIC PACKAGE CASE 724 24 1 DW SUFFIX PLASTIC PACKAGE CASE 751E (SO-24L) 24 Complete Dual Conversion FM Receiver - Antenna to Audio Output 1 Input Frequency Range - 200 MHz Voltage Buffered RSSI with 70 dB of Usable Range ORDERING INFORMATION Low Voltage Operation - 2.0 to 6.0 Vdc (2 Cell NiCad Supply) Low Current Drain - 3.5 mA Typ Device Low Impedance Audio Output < 25 MC13135P VHF Colpitts First LO for Crystal or VCO Operation Isolated Tuning Diode MC13135DW Buffered First LO Output to Drive CMOS PLL Synthesizer MC13136DW PIN CONNECTIONS MC13135 1st LO 1st LO Base 1 1st LO Emitter 2 1st LO Out 3 VCC1 4 2nd LO Emitter 5 2nd LO Base 6 2nd Mixer Out 7 VEE 8 Limiter In 9 VCC1 2nd LO VCC2 24 Varicap C 1st LO Base 1 23 Varicap A 1st LO Emitter 2 22 1st Mixer In 1 1st LO Out 3 21 1st Mixer In 2 VCC1 4 20 1st Mixer Out 2nd LO Emitter 5 19 VCC2 18 2nd Mixer In AF 17 Audio Out 16 Op Amp Out TA = - 40 to +85C SO-24L SO-24L Varicap 2nd Mixer Out 7 VEE 8 Limiter In 9 24 Varicap C 22 1st Mixer In 1 VCC1 21 1st Mixer In 2 20 1st Mixer Out 2nd LO VCC2 2nd LO Base 6 19 VCC2 18 2nd Mixer In AF 17 Audio Out 16 Buffered RSSI Output Demod 15 Op Amp In - Decouple 1 10 Decouple 2 11 14 Op Amp In + Decouple 2 11 RSSI 12 13 Quad Coil Limiter Plastic DIP 23 Varicap A Demod Decouple 1 10 Package MC13136 1st LO Varicap Operating Temperature Range RSSI 12 Limiter 15 Op Amp In - 14 Limiter Output 13 Quad Input Each device contains 142 active transistors. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13135 MC13136 3.2-79 NOT RECOMMENDED FOR NEW DESIGNS MC13135 MC13136 MC13135 MC13136 Rating Pin Symbol Value Unit 4, 19 VCC (max) 6.5 Vdc RF Input Voltage 22 RFin 1.0 Vrms Junction Temperature - TJ +150 C Storage Temperature Range - Tstg - 65 to +150 C NOT RECOMMENDED FOR NEW DESIGNS Power Supply Voltage RECOMMENDED OPERATING CONDITIONS Rating Pin Symbol Value Unit 4, 19 VCC 2.0 to 6.0 Vdc Maximum 1st IF - fIF1 21 MHz Maximum 2nd IF - fIF2 3.0 MHz Ambient Temperature Range - TA - 40 to + 85 C Power Supply Voltage ELECTRICAL CHARACTERISTICS (TA = 25C, VCC = 4.0 Vdc, fo = 49.7 MHz, fMOD = 1.0 kHz, Deviation = 3.0 kHz, f1st LO = 39 MHz, f2nd LO = 10.245 MHz, IF1 = 10.7 MHz, IF2 = 455 kHz, unless otherwise noted. All measurements performed in the test circuit of Figure 1.) Characteristic Condition Symbol Min Typ Max Unit Total Drain Current No Input Signal ICC - 4.0 6.0 mAdc Sensitivity (Input for 12 dB SINAD) Matched Input VSIN - 1.0 - Vrms Recovered Audio MC13135 MC13136 VRF = 1.0 mV AFO 170 215 220 265 300 365 - 130 - Limiter Output Level (Pin 14, MC13136) mVrms VLIM mVrms 1st Mixer Conversion Gain VRF = - 40 dBm MXgain1 - 12 - dB 2nd Mixer Conversion Gain VRF = - 40 dBm MXgain2 - 13 - dB First LO Buffered Output - VLO - 100 - mVrms Total Harmonic Distortion VRF = - 30 dBm THD - 1.2 3.0 % Demodulator Bandwidth - BW - 50 - kHz RSSI Dynamic Range - RSSI - 70 - dB - - -17 -11 - - - - 27 - First Mixer 3rd Order Intercept (Input) Second Mixer 3rd Order Intercept (RF Input) TOIMix1 Matched Unmatched dBm Matched Input TOIMix2 First LO Buffer Output Resistance - RLO - - - First Mixer Parallel Input Resistance - R - 722 - First Mixer Parallel Input Capacitance - C - 3.3 - pF First Mixer Output Impedance - ZO - 330 - Second Mixer Input Impedance - ZI - 4.0 - k Second Mixer Output Impedance - ZO - 1.8 - k Detector Output Impedance - ZO - 25 - MC13135 MC13136 3.2-80 dBm MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS MAXIMUM RATINGS MC13135 MC13136 Although the MC13136 can be operated with a ceramic discriminator, the recovered audio measurements for both the MC13135 and MC13136 are made with an LC quadrature detector. The typical recovered audio will depend on the external circuit; either the Q of the quad coil, or the RC matching network for the ceramic discriminator. On the MC13136, an external capacitor between Pins 13 and 14 can be used with a quad coil for slightly higher recovered audio. See Figures 10 through 13 for additional information. Since adding a matching circuit to the RF input increases the signal level to the mixer, the third order intercept (TOI) point is better with an unmatched input (50 from Pin 21 to Pin 22). Typical values for both have been included in the Electrical Characterization Table. TOI measurements were taken at the pins with a high impedance probe/spectrum analyzer system. The first mixer input impedance was measured at the pin with a network analyzer. Figure 1a. MC13135 Test Circuit VCC 0.84 H 1st LO 0.01 24 Varicap 1 0.1 Figure 1. 23 20 p 39.0 MHz Xtal 1.0 k 2 22 5.0 p 0.001 62 pF 3 VCC1 5.0 k 0.2 H 21 20 5 120 p 50 p 10.245 MHz Xtal 2nd LO Ceramic Filter 10.7 MHz VCC2 6 19 0.1 7 9 AF 17 Demod 10 0.1 0.1 360 18 8 Ceramic Filter 455 kHz RF Input 0.01 4 0.1 180 p 8.2 k 0.1 Limiter 16 11 39 k 15 0.1 14 12 0.1 39 k 13 455 kHz Quad Coil Figure 1b. MC13136 Quad Detector Test Circuit VCC AF Demod Limiter 16 39 k 15 12 0.1 14 39 k 13 455 kHz Quad Coil MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13135 MC13136 3.2-81 NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS TEST CIRCUIT INFORMATION MC13135 MC13136 4.0 3.0 RFin = 49.7 MHz fMOD = 1.0 kHz fDEV = 3.0 kHz 2.0 1.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 600 400 200 -140 8.0 -120 -100 - 80 - 60 Figure 4. Varactor Capacitance, Resistance versus Bias Voltage Figure 5. Oscillator Frequency versus Varactor Bias CP, f = 150 MHz RP, f = 50 MHz 8.0 10 4.0 CP, f = 50 MHz 5.0 2.0 RP, f = 150 MHz 1.0 1.5 2.0 2.5 3.0 3.5 0 4.0 - 20 48.0 47.5 f, FREQUENCY (MHz) 10 6.0 47.0 0.61 H 46.5 46.0 500 p 1 1st LO 24 23 45.5 27 p 2 500 p 0.2 F 1.0 M VB Varicap 5.0 p 45.0 1.0 2.0 3.0 4.0 5.0 VB, VARACTOR BIAS VOLTAGE, VPin24 to VPin 23 (Vdc) VB, VARACTOR BIAS VOLTAGE (Vdc) Figure 6. Signal Levels versus RF Input Figure 7. Signal + Noise, Noise, and AM Rejection versus Input Power 30 6.0 10 S+N 0 S+N, N, AND AMR (dB) 10 Second Mixer Output -10 -30 First Mixer Output First Mixer Input -50 - 90 - 80 - 70 - 60 - 50 RFin, RF INPUT (dBm) MC13135 MC13136 3.2-82 -10 - 20 - 30 - 40 - 30 - 20 S + N 30% AM - 40 - 50 - 60 Second Mixer Input - 70 -100 - 40 RF INPUT (dBm) 15 0 0.5 800 VCC, SUPPLY VOLTAGE (V) 25 20 1000 VCC = 4.0 V RFin = 49.67 MHz fMOD = 1.0 kHz fDEV = 3.0 kHz - 70 -130 VCC = 4.0 Vdc RFin = 49.67 MHz fMOD = 1.0 kHz fDEV = 3.0 kHz -110 N - 90 - 70 - 50 - 30 RFin, RF INPUT (dBm) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS 1200 RSSI OUTPUT (mVdc, Pin 12) 5.0 R P , EQUIVALENT PARALLEL RESISTANCE (k ) I CC , SUPPLY CURRENT (mA) C P , EQUIVALENT PARALLEL CAPACITANCE (pF) Figure 3. RSSI Output versus RF Input 1400 0 0 POWER (dBm) NOT RECOMMENDED FOR NEW DESIGNS Figure 2. Supply Current versus Supply Voltage 6.0 MC13135 MC13136 Figure 8. Op Amp Gain and Phase versus Frequency Figure 9. First Mixer Third Order Intermodulation (Unmatched Input) 80 -10 200 - 30 240 - 50 10 k 100 k R R = 68 k 455 kHz Quad Coil Toko 7MC-8128Z R = 47 k R = 39 k 500 0 1.0 3.0 5.0 7.0 9.0 - 40 - 20 8.0 VCC 7.0 13 R = 68 k 455 kHz Quad Coil Toko 7MC-8128Z 6.0 5.0 R = 47 k 4.0 3.0 2.0 R = 39 k 1.0 1.0 3.0 5.0 7.0 9.0 Figure 12. Recovered Audio versus Deviation for MC13136 Figure 13. Distortion versus Deviation for MC13136 VCC muRata C R 455 kHz Resonator CDB455C34 R = 2.7 k C = 270 pF R= C = 660 pF 400 200 R = 1.2 k C = 100 pF 4.0 5.0 6.0 7.0 8.0 9.0 fDEV, DEVIATION (kHz) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 0 R fDEV, DEVIATION (kHz) 600 0 3.0 - 60 fDEV, DEVIATION (kHz) THD, TOTAL HARMONIC DISTORTION (%) 800 13 - 80 Figure 11. Distortion versus Deviation for MC13135 1000 14 -100 -100 Figure 10. Recovered Audio versus Deviation for MC13135 1500 1000 3rd Order Intermod Products RF INPUT (dBm) VCC 13 Desired Products - 60 - 80 280 10 M - 40 f, FREQUENCY (Hz) 2000 RA, RECOVERED AUDIO (mVpp) 1.0 M - 20 10 VCC 14 8.0 13 C R 6.0 muRata 455 kHz Resonator CDB455C34 R= C = 660 pF R = 2.7 k C = 270 pF 4.0 2.0 0 3.0 R = 1.2 k C = 100 pF 4.0 5.0 6.0 7.0 8.0 9.0 fDEV, DEVIATION (kHz) MC13135 MC13136 3.2-83 NOT RECOMMENDED FOR NEW DESIGNS 160 MIXER OUTPUT (dB) Gain 10 0 0 THD, TOTAL HARMONIC DISTORTION (%) AV , GAIN (dB) Phase 20 , EXCESS PHASE (DEGREES) 120 30 RA, RECOVERED AUDIO (mVpp) NOT RECOMMENDED FOR NEW DESIGNS 50 MC13135 MC13136 VCC Two separate VCC lines enable the first LO and mixer to continue running while the rest of the circuit is powered down. They also isolate the RF from the rest of the internal circuit. Local Oscillators The local oscillators are grounded collector Colpitts, which can be easily crystal-controlled or VCO controlled with the on-board varactor and external PLL. The first LO transistor is internally biased, but the emitter is pinned-out and IQ can be increased for high frequency or VCO operation. The collector is not pinned out, so for crystal operation, the LO is generally limited to 3rd overtone crystal frequencies; typically around 60 MHz. For higher frequency operation, the LO can be provided externally as shown in Figure 16. Buffer An amplifier on the 1st LO output converts the single-ended LO output to a differential signal to drive the mixer. Capacitive coupling between the LO and the amplifier minimizes the effects of the change in oscillator current on the mixer. Buffered LO output is pinned-out at Pin 3 for use with a PLL, with a typical output voltage of 320 mVpp at VCC = 4.0 V and with a 5.1 k resistor from Pin 3 to ground. As seen in Figure 14, the buffered LO output varies with the supply voltage and a smaller external resistor may be needed for low voltage operation. The LO buffer operates up to 60 MHz, typically. Above 60 MHz, the output at Pin 3 rolls off at approximately 6.0 dB per octave. Since most PLLs require about 200 mVpp drive, an external amplifier may be required. Figure 14. Buffered LO Output Voltage versus Supply Voltage 600 RPin3 = 3.0 k 500 Mixers The first and second mixer are of similar design. Both are double balanced to suppress the LO and input frequencies to give only the sum and difference frequencies out. This configuration typically provides 40 to 60 dB of LO suppression. New design techniques provide improved mixer linearity and third order intercept without increased noise. The gain on the output of the 1st mixer starts to roll off at about 20 MHz, so this receiver could be used with a 21 MHz first IF. It is designed for use with a ceramic filter, with an output impedance of 330 . A series resistor can be used to raise the impedance for use with a crystal filter, which typically has an input impedance of 4.0 k. The second mixer input impedance is approximately 4.0 k; it requires an external 360 parallel resistor for use with a standard ceramic filter. Limiting IF Amplifier and Detector The limiter has approximately 110 dB of gain, which starts rolling off at 2.0 MHz. Although not designed for wideband operation, the bandwidth of the audio frequency amplifier has been widened to 50 kHz, which gives less phase shift and enables the receiver to run at higher data rates. However, care should be taken not to exceed the bandwidth allowed by local regulations. The MC13135 is designed for use with an LC quadrature detector, and does not have sufficient drive to be used with a ceramic discriminator. The MC13136 was designed to use a ceramic discriminator, but can also be run with an LC quad coil, as mentioned in the Test Circuit Information section. The data shown in Figures 12 and 13 was taken using a muRata CDB455C34 ceramic discriminator which has been specially matched to the MC13136. Both the choice of discriminators and the external matching circuit will affect the distortion and recovered audio. RSSI/Op Amp The Received Signal Strength Indicator (RSSI) on the MC13135/13136 has about 70 dB of range. The resistor needed to translate the RSSI current to a voltage output has been included on the internal circuit, which gives it a tighter tolerance. A temperature compensated reference current also improves the RSSI accuracy over temperature. On the MC13136, the op amp on board is connected to the output to provide a voltage buffered RSSI. On the MC13135, the op amp is not connected internally and can be used for the RSSI or as a data slicer (see Figure 17c). 400 RPin3 = 5.1 k 300 200 100 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VCC, SUPPLY VOLTAGE (Vdc) MC13135 MC13136 3.2-84 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS The MC13135/13136 are complete dual conversion receivers. They include two local oscillators, two mixers, a limiting IF amplifier and detector, and an op amp. Both provide a voltage buffered RSSI with 70 dB of usable range, isolated tuning diode and buffered LO output for PLL operation, and a separate VCC pin for the first mixer and LO. Improvements have been made in the temperature performance of both the recovered audio and the RSSI. OUTPUT (mVpp ) NOT RECOMMENDED FOR NEW DESIGNS CIRCUIT DESCRIPTION MC13135 MC13136 Figure 15. PLL Controlled Narrowband FM Receiver at 46/49 MHz NOT RECOMMENDED FOR NEW DESIGNS 0.1 2.7 k 1st LO 500 p 500 p 100 k 24 Varicap 1 23 47 k 27 p 0.68 H 1.0 2 0.1 150 pF RF Input 0.01 4 20 Ceramic Filter 10.7 MHz 5 120 p VDD Fin1 D0 PD1 D1 PD2 D2 LD D3 VSS Fin2 MC145166 0.2 H 21 VCC1 0.1 3.0 p 62 pF 3 5.1 k OSC OSC Out In 0.001 22 5.0 p 0.01 50 p 10.245 MHz Xtal 2nd LO VCC2 6 19 7 0.1 9 AF Demod 10 0.1 0.1 360 18 8 Ceramic Filter 455 kHz Recovered Audio 1.0 k 17 0.15 Limiter 10 k 16 11 RSSI Output 15 14 12 0.1 68 k 13 455 kHz Quad Coil Figure 16. 144 MHz Single Channel Application Circuit Preamp for MC13135 at 144.455 MHz 1st LO External Oscillator Circuit VCC 15 k L1 100 p 0.82 1.0 k 15 p 1.0 fosc = 133.755 MHz 68 p 43 p 470 L3 To Mixer Q1 - MPS5179 X1 - 44.585 MHz 3rd Overtone Series Resonant Crystal L1 - 0.078 H Inductor (Coilcraft Part # 146-02J08) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 39 p Q1 L2 12 p 1.0 F 12 p 470 p RF Input 5.6 k X1 + 5.1 k 3300 p Q1 1000p VCC 15 k + 1.0 F 3300 p 470 Q1 - MPS5179 L2 - 0.05 H L3 - 0.07 H MC13135 MC13136 3.2-85 NOT RECOMMENDED FOR NEW DESIGNS MC13135 VCC MC13135 MC13136 Figure 17a. Single Channel Narrowband FM Receiver at 49.7 MHz MC13135 1.0 k 1st LO 2200 p 1 27 p 39 MHz Xtal 5.0 p 2 Figure 17. 24 Varicap 23 22 3 Buffered LO Output 0.01 0.01 4 0.1 20 5 120 p 50 p 2nd LO Ceramic Filter 10.7 MHz VCC2 6 19 7 10.245 MHz Xtal Ceramic Filter 455 kHz 0.1 9 AF Demod 10 0.1 360 18 8 0.1 62 pF RF Input 150 p 50 Source 0.2 H 21 VCC1 5.1 k 0.001 17 1.0 k Recovered Audio 0.15 Limiter 10 k 16 11 RSSI Output 15 14 12 0.1 13 39 k 455 kHz Quad Coil Figure 17b. PC Board Component View 39 MHz XT 3 NOTES: 1. 0.2 H tunable (unshielded) inductor 2. 39 MHz Series mode resonant 3rd Overtone Crystal 3. 1.5 H tunable (shielded) inductor 4. 10.245 MHz Fundamental mode crystal, 32 pF load 5. 455 kHz ceramic filter, muRata CFU 455B or equivalent 6. Quadrature coil, Toko 7MC-8128Z (7mm) or Toko RMC-2A6597HM (10mm) 7. 10.7 MHz ceramic filter, muRata SFE10.7MJ-A or equivalent 2 1 1.0 k 0.1 CF 5 10.7 MHz CF 4 MC13135 10.245 MHz XT 1.0 + 360 1.0k 7 10k 455 KHz 0.1 62p 0.01 50p 120p 150p .001 27p 5p 0.1 5.1k 2200p 0.15 0.1 0.22 10 + +4.7 10k 0.1 51K 39K MC34119 Figure 17c. Optional Data Slicer Circuit (Using Internal Op Amp) +10 0.1 VCC 6 20 k Vin (Pin 17) 20 k 15 16 14 10 k FSK Data Output 0.001 10 k 1.0 M MC13135 MC13136 3.2-86 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS 1.0 H + 1.0 0.01 NOT RECOMMENDED FOR NEW DESIGNS VCC MC13135 MC13136 Figure 18. PC Board Solder Side View 3.25 L.O. VCC2 RSSI MC13135 MC13136 3.375 (Circuit Side View) Figure 19. PC Board Component View 39 MHz XT 3 NOTES: 1. 0.2 H tunable (unshielded) inductor 2. 39 MHz Series mode resonant 3rd Overtone Crystal 3. 1.5 H tunable (shielded) inductor 4. 10.245 MHz Fundamental mode crystal, 32 pF load 5. 455 kHz ceramic filter, muRata CFU 455B or equivalent 6. Ceramic discriminator, muRata CDB455C34 or equivalent 7. 10.7 MHz ceramic filter, muRata SFE10.7MJ-A or equivalent 2 1 1.0 k .001 27p 5p 0.1 0.1 0.1 1.0 + 360 1.0k 7 CF 5 0.01 10.7 MHz CF 4 MC13136 10.245 MHz XT 62p 0.01 50p 120p 150p 2200p 10k 455 KHz 0.15 0.1 0.22 10 + 51K 2.7k 6 +4.7 10k 270p 0.1 MC34119 +10 0.1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13135 MC13136 3.2-87 NOT RECOMMENDED FOR NEW DESIGNS GROUND VCC AUDIO SPEAKER 5.1k NOT RECOMMENDED FOR NEW DESIGNS RF IN MC13135 MC13136 Figure 20a. Single Channel Narrowband FM Receiver at 49.7 MHz 1.0 H 1.0 + 1st LO 2200 p 24 Varicap 1 23 27 p 2 39 MHz Xtal 5.0 p 1.0 k 22 62 pF 3 Buffered LO Output 0.01 5.0 k 4 0.1 21 VCC1 50 p 10.245 MHz Xtal 2nd LO RF Input 50 Source Ceramic Filter 10.7 MHz VCC2 6 19 0.1 360 18 8 9 AF 17 1.0 k Recovered Audio Demod 10 0.1 150 pF 20 7 Ceramic Filter 455 kHz 0.1 0.2 H 0.01 5 120 p 0.001 0.15 Limiter 10 k 16 11 15 12 RSSI Output 14 270 p 0.1 13 2.7 k muRata 455 kHz Resonator CDB455C34 Figure 20b. Optional Audio Amplifier Circuit 1 4.7 + 2 Recovered Audio + 10 0.22 3 8 4 7 6 +10 VCC Speaker 5 10 k 51 k MC13135 MC13136 3.2-88 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS Figure 20. MC34119 NOT RECOMMENDED FOR NEW DESIGNS MC13136 VCC NOT RECOMMENDED FOR NEW DESIGNS 18 VCC 2 15 k 8.0 k 6.0 k 3 1 1.0 k 22 2 5.0 p 4.0 k 4.0 k 6 1.0 k 5 21 1.6 k 12 k 7 100 20 VEE VEE First LO First Mixer Second LO Second Mixer 16 VCC 2 14 15 12 100 k VEE VEE Op Amp 13 VCC 2 VCC 2 Bias 9 2.0 k 10 11 MC13135 MC13136 3.2-89 VEE 5.0 p 17 52 k 50 k VEE Limiting IF Amplifier Detector and Audio Amplifier This device contains 142 active transistors. NOT RECOMMENDED FOR NEW DESIGNS MC13135 MC13136 VCC 2 Figure 21. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Figure 21. MC13135 Internal Schematic VCC 1 NOT RECOMMENDED FOR NEW DESIGNS MC13135 MC13136 3.2-90 Figure 22. MC13136 Internal Schematic 18 VCC 1 VCC 2 15 k 8.0 k 6.0 k 3 1 6 1.0 k 1.0 k 22 2 5.0 p 4.0 k 4.0 k 5 21 1.6 k 12 k 7 100 20 VEE VEE First LO First Mixer Second LO Second Mixer 16 Figure 22. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA VCC 2 15 12 100 k VEE VEE Op Amp 13 VCC 2 VCC 2 Bias 9 2.0 k 10 11 VEE 5.0 p 17 52 k 50 k VEE Limiting IF Amplifier 14 This device contains 142 active transistors. Detector and Audio Amplifier NOT RECOMMENDED FOR NEW DESIGNS MC13135 MC13136 VCC 2 MC13145 Low Power Integrated Receiver for ISM Band Applications UHF WIDEBAND RECEIVER SUBSYSTEM (LNA, Mixer, VCO, Prescalar, IF Subsystem, Coilless Detector) The MC13145 is a dual conversion integrated RF receiver intended for ISM band applications. It features a Low Noise Amplifier (LNA), two 50 W linear Mixers with linearity control, Voltage Controlled Oscillator (VCO), second LO amplifier, divide by 64/65 dual modulus Prescalar, split IF Amplifier and Limiter, RSSI output, Coilless FM/FSK Demodulator and power down control. Together with the transmit chip (MC13146) and the baseband chip (MC33410 or MC33411A/B), a complete 900 MHz cordless phone system can be implemented. This device may be used in applications up to 1.8 GHz. * Low (<1.8 dB @ 900 MHz) Noise Figure LNA with 14 dB Gain * * * * * * * * Externally Programmable Mixer linearity: IIP3 = 10(nom.) to 17 dBm (Mixer1); IIP3 = 10 (nom.) to 17 dBm (Mixer2) 50 W Mixer Input Impedance and Open Collector Output (Mixer 1 and Mixer 2); 50 W Second LO (LO2) Input Impedance Low Power 64/65 Dual Modulus Prescalar (MC12053 type) 48 1 FTA SUFFIX PLASTIC PACKAGE CASE 932 (LQFP-48) Split IF for Improved Filtering and Extended RSSI Range Internal 330 W Terminations for 10.7 MHz Filters Linear Coilless FM/FSK Demodulator with Externally Programmable Bandwidth, Center Frequency and Audio level 2.7 to 6.5 V Operation, Low Current Drain (< 27 mA, Typ @ 3.6 V) with Power Down Mode (<10 mA, Typ) 2.4 GHz RF, 1.0 GHz IF1 and 50 MHz IF2 Bandwidth ORDERING INFORMATION Device Temperature Range Package MC13145FTA TA = -20 to 70C LQFP- 48 VCC VCC MC PRSC Out VEE RSSI Det Out Det Gain AFT In AFT Out Fadj VEE PIN CONNECTIONS AND FUNCTIONAL BLOCK DIAGRAM 12 11 10 9 8 7 6 5 4 3 2 1 VEE 13 48 VEE Demod 47 BWadj LNA In 14 VEE 15 RF /64, 65 VEE 16 46 Lim Dec2 S LNA Lim 45 Lim Dec1 44 Lim In LNA Out 17 43 VCC Mxr1In 19 42 VCC Lin Adj1 20 41 IF Out Enable 21 25 26 27 28 29 30 31 32 33 34 35 36 V EE LO2 V EE IF2+ IF2- 37 VEE VCC oscB 24 Mxr2 In 38 IF In LinAdj2 oscE 23 IF1- 39 IF Dec1 IF1+ oscC 22 V EE ESD Sensitive -- Handle with Care 40 IF Dec2 IF VCC LO Control VEE 18 IF1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA IF2 This device contains 626 active transistors. MC13145 3.2-91 MC13145 OVERALL RECEIVER SPECIFICATIONS MAXIMUM RATINGS AAAAAAAAAAAA AAAAA AAAAA AAAA AAAAAAAAAAAA AAAAA AAAAA AAAA AAAAAAAAAAAA AAAAA AAAAA AAAA AAAAAAAAAAAA AAAAA AAAAA AAAA Rating Symbol Value Unit Power Supply Voltage VCC(max) 7.0 Vdc Junction Temperature TJ(max) 150 C Storage Temperature Range Tstg - 65 to 150 C Maximum Input Signal Pin 5.0 dBm NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Recommended Operating Conditions, Electrical Characteristics tables or Pin Descriptions section. 2. Meets Human Body Model (HBM) 250 V and Machine Model (MM) 25 V. ESD data available upon request. RECOMMENDED OPERATING CONDITIONS AAAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAAAAAAA AAAAA AAAA AAAA AAAA AAA AAAAAAAAAAAAAA AAAA AAAA AAAAA AAA AAAA AAAA AAA AAAAAAAAAAAAAA AAAA AAAA AAAAA AAA AAAA AAAA AAA AAAAAAAAAAAAAA AAAA AAAA AAAAA AAA AAAA AAAA AAA AAAAAAAAAAAAAA AAAA AAAA AAAAA AAA AAAA AAAA AAA AAAAAAAAAAAAAA AAAA AAAA AAAAA AAA AAAA AAAA AAA AAAAAAAAAAAAAA AAAA AAAA AAAAA AAA AAAA AAAA AAA AAAAAAAAAAAAAA AAAA AAAA AAAAA AAA AAAA AAAA AAA AAAAAAAAAAAAAA AAAA AAAA AAAAA AAA AAAA AAAA AAA AAAAAAAAAAAAAA AAAA AAAA AAAAA AAA AAAA AAAA AAA Rating Symbol Min Typ Max Unit VCC VEE 2.7 - 6.5 Vdc 0 0 0 Input Frequency (LNA In, Mxr1 In) fin 100 - 1800 MHz Ambient Temperature Range TA - 20 - 70 C Input Signal Level (with minor performance degradation) Pin - -10 - dBm Power Supply Voltage (TA = 25C) RECEIVER DC ELECTRICAL CHARACTERISTICS (TA = 25C; VCC = 3.6 Vdc; No Input Signal, unless otherwise noted) Characteristics Symbol Min Typ Max Unit Total Supply Current (Enable = VCC) Itotal 24 27 34 mA Power Down Current (Enable = VEE) Itotal - 10 50 mA RECEIVER AC ELECTRICAL CHARACTERISTICS (TA = 25C; VCC = 3.6 Vdc; RF In = 1.0 GHz; 1st LO Freq = 1070.7 MHz; 2nd LO Freq = 60 MHz; fmod = 1.0 kHz; fdev = 40 kHz; IF filter bandwidth = 280 kHz, unless otherwise noted. See Figure 1 Test Circuit) Input Measure Pin Pin Characteristics Symbol MIn Typ Max Unit SINAD @ -110 dBm LNA Input LNA In Det Out SINAD 12 20 - dB 12 dB SINAD Sensitivity (Apps Circuit with C-message filter at DetOut) LNA In Det Out SINAD12dB - -115 - dBm 30 dB SINAD Sensitivity (No IF filter distortion within 40 kHz) LNA In Det Out SINAD30dB - -100 - dBm SINAD Variation with IF Offset of 40 kHz (No IF filter distortion within 40 kHz) LNA In Det Out - - 5.0 - dB Noise Figure: LNA, 1st Mixer & 2nd Mixer LNA In IF Out NF - 3.5 5.0 dB Power Gain: LNA, 1st Mixer & 2nd Mixer LNA In IF Out G 15 19 25 dB RSSI Dynamic Range IF In RSSI - - 80 - RSSI Current -10 dBm @ IF Input -20 dBm @ IF Input -30 dBm @ IF Input -40 dBm @ IF Input -50 dBm @ IF Input -60 dBm @ IF Input -70 dBm @ IF Input -80 dBm @ IF Input -90 dBm @ IF Input IF In RSSI - dB A 35 - - - 15 - - - - 40 35 30 25 20 15 10 5.0 1.0 55 - - - 37 - - - 7.0 - -18 - AAAAAAAAAAAAAA AAAA AAAA AAAAA AAA AAAA AAAA AAA AAAAAAAAAAAAAA AAAA AAAA AAAAA AAA AAAA AAAA AAA AAAAAAAAAAAAAA AAAA AAAA AAAAA AAA AAAA AAAA AAA Input 1.0 dB Compression Point(Measured at IF output) MC13145 3.2-92 Pin1dB dBm MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13145 RECEIVER AC ELECTRICAL CHARACTERISTICS (TA = 25C; VCC = 3.6 Vdc; RF In = 1.0 GHz; 1st LO Freq = 1070.7 MHz; 2nd LO Freq = 60 MHz; fmod = 1.0 kHz; fdev = 40 kHz; IF filter bandwidth = 280 kHz, unless otherwise noted. See Figure 1 Test Circuit) Input Measure Pin Pin Characteristics Symbol MIn Typ Max Unit AAAAAAAAAAAAAA AAAA AAAA AAAAA AAA AAAA AAAA AAA AAAAAAAAAAAAAA AAAA AAAA AAAAA AAA AAAA AAAA AAA AAAAAAAAAAAAAA AAAA AAAA AAAAA AAA AAAA AAAA AAA AAAAAAAAAAAAAA AAAA AAAA AAAAA AAA AAAA AAAA AAA W AAAAAAAAAAAAAA AAAA AAAA AAAAA AAA AAAA AAAA AAA Input 3rd Order Intercept Point (Measured at IF output) Demodulator Output Swing (50 k || 56 pF Load) IF In Det Out IIP3 - -8.0 - dBm Vout 0.8 1.0 1.2 Vpp - 100 - Demodulator Bandwidth (1.0 dB bandwidth) Det Out BW Prescalar Output Level (10 k //8.0 pF load) Prescaler 64 Frequency = 16.72968 MHz Prescaler 65 Frequency = 16.4723 MHz PRSCout Vout kHz Vpp 0.4 0.4 0.51 0.51 0.6 0.6 MC Current Input (High) MC Iih 70 100 130 A MC Current Input (Low) MC Iil -130 -100 -70 A Input high voltage Enable Vih VCC - 0.4 - VCC V Input low voltage Enable Vil 0 - 0.4 V Input Current Enable Iin -50 - 50 A PRSCout TPLL - 10 - nS SNR @ -30 dBm Signal Input (<40 kHz deviation;with C-Message Filter) - 50 - dB Total Harmonic Distortion (<40 kHz deviation;with C-Message Filter) - 1.0 - % Spurious Response SINAD (RF In: -50 dBm) - 12 - dB AAAAAAAAAAAAAA AAAA AAAA AAAAA AAA AAAA AAAA AAA AAAAAAAAAAAAAA AAAA AAAA AAAAA AAA AAAA AAAA AAA AAAAAAAAAAAAAA AAAA AAAA AAAAA AAA AAAA AAAA AAA AAAAAAAAAAAAAA AAAA AAAA AAAAA AAA AAAA AAAA AAA AAAAAAAAAAAAAA AAAA AAAA AAAAA AAA AAAA AAAA AAA AAAAAAAAAAAAAA AAAA AAAA AAAAA AAA AAAA AAAA AAA PLL Setup Time [Note 1] MC MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13145 3.2-93 MC13145 Figure 1. Test Circuit MC PRSC Out 10 k 7.2 p 10 n 1.0 n RSSI 2.0 k 51 k 2.0 k 56 p Det Out 10 k 51 k 100 n 68 k 5 4 3 2 15 64/65 LNA 48 BWadj 100 k 47 1.0 n 46 S 16 6.8 n 1 Fadj 6 AFT Out 7 AFT 13 1.5 p 14 1.0 n 8 Det Gain 9 Det Out 6.8 p 10 VCC VCC 6.8 n 100 p 11 RSSI LNA In 12 PRSC Out 1.0 n MC 2.7 k 100 n Lim 45 1.0 n 44 17 18 19 21 VCC 42 41 1.0 n 40 100 n IF 22 1.0 n 43 Control 20 1.0 n EN MC13145 VCC 39 4.7 p 1.0 n 38 23 4.7 p 24 47 p VCC 25 37 VCC 26 27 28 29 30 31 32 33 34 35 10M7 3.3 nH *CF2 1.0 p *CF1 1.0 M 10M7 20 36 10 n 1.0 M 1.0 n 10 p 1.0 k RFLO 50 16 p VCC 1.0 100 n 12 p T1** 100 n 10 1.0 1.0 n 10 n 1.0 n RFLO2 IF In 10 1.0 *CF1 & CF2 = 280 kHz, 6.0 dB BW, 10.7 MHz Ceramic Filter **T1 = Toko Part # 600ENAS-A998EK MC13145 3.2-94 100 n T2 TC4 IF Out MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13145 CIRCUIT DESCRIPTION Low Noise Amplifier (LNA) The LNA is a cascoded common emitter amplifier configuration. Under very large RF input signals, the DC base current of the common emitter and cascode transistors can become very significant. To maintain linear operation of the LNA, adequate dc current source is needed to establish the 2Vbe reference at the base of the RF cascoded transistor and to provide the base voltage on the common emitter transistor. A sensing circuit, together with a current mirror guarantees that there is always sufficient dc base current available for the cascode transistor under all power levels. 1st and 2nd Mixer Each mixer is a double-balanced class AB four quadrant multiplier which may be externally biased for high mixer dynamic range. Mixer input third order intercept point of up to 17 dBm is achieved with only 7.0 mA of additional supply current. The 1st mixer has a single-ended input at 50 and operates at 1.0 GHz with -3.0 dB of power gain at approximately 100 mVrms LO drive level. The mixers have open collector differential outputs to provide excellent mixer dynamic range and linearity. 1st Local Oscillator The 1st LO has an on-chip transistor which operates with coaxial transmssion line and LC resonant elements up to 1.8 GHz. A VCO output is available for multi-frequency operation under PLL synthesizer control. RSSI The received signal strength indicator (RSSI) output is a current proportional to the log of the received signal amplitude. The RSSI current output (Pin 7) is derived by summing the currents from the IF and limiting amplifier stages. An increase in RSSI dynamic range, particularly at higher input signal levels is achieved. The RSSI circuit is designed to provide typically 80 dB of dynamic range with temperature compensation. Linearity of the RSSI is optimized by using external ceramic bandpass filters which have an insertion loss of 4.0 dB and 330 source and load impedance. Limiter The limiter section is similar to the IF amplifier section except that five stages are used with the middle three contributing to the RSSI. The fixed internal input impedance is 330 . The total gain of the limiting amplifier section is approximately 84 dB. This IF limiting amplifier section internally drives the coilless quadrature detector section. Coilless Quadrature Detector The coilless detector is a unique design which eliminates the conventional tunable quadrature coil in FM receiver systems. The frequency detector implements a phase locked loop with a fully integrated on chip relaxation oscillator which is current controlled and externally adjusted, a bandwidth adjust, and an automatic frequency tuning circuit. The loop filter is external to the chip allowing the user to set the loop dynamics. Two outputs are used: one to deliver the audio signal (detector output) and the other to filter and tune the detector (AFT). Figure 2. 2nd Mixer NF & Gain versus LO Power 25 -2.0 20 -4.0 -6.0 15 GAIN Current Regulation/Enable The MC13145 is designed for battery powered portable applications. Supply current is typically 27 mA at 3.6 Vdc. Temperature compensating, voltage independent current regulators are controlled by the Enable Pin where "high" powers up and "low" powers down the entire circuit. contributing to the RSSI. This section has internal DC feedback and external input decoupling for improved symmetry and stability. The total gain of the IF amplifier block is approximately 40 dB up to 40MHz. The fixed internal input impedance is 330 . When using ceramic filters requiring source and load impedances of 330 , no external matching is necessary. Overall RSSI linearity is dependent on having total midband attenuation of 10 dB (4.0 dB insertion loss plus 6.0 dB impedance matching loss) for the filter. The output of the IF amplifier is buffered and the impedance is 330 . NOISE FIGURE (dB) General The MC13145 is a low power dual conversion wideband FM receiver incorporating a split IF. This device is designated for use as the receiver in analog and digital FM systems such as 900 Mhz ISM Band Cordless phones and wideband data links with data rates up to 150kbps. It contains a 1st and 2nd mixer , 1st and 2nd local oscillator, Received Signal Strength Indicator (RSSI), IF amplifier, limiting IF, a unique coilless quadrature detector, and a device enable function. NF -8.0 10 Gain VCC = 3.6 Vdc TA = 25C PRF = -25 dBm Lim Adj Current = 0 5.0 0 -14 -9.0 -4.0 -1.0 6.0 -10 -12 11 LO POWER (dBm) Evaluation PCB The evaluation PCB is a versatile board which allows the MC13145 to be configured as a dual-conversion receiver, or to characterize individual operating parameters. The general purpose schematic and associated parts list for a typical application are given in Figure 15. Please refer to AN1687/D and AN1691/D for additional details and applications for the device. IF Amplifier The first IF amplifier section is composed of three differential stages with the second and third stages MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13145 3.2-95 AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA MC13145 PIN FUNCTION DESCRIPTION Pin Symbol/Type 47 BWadj Description Description See Figure 3. COILLESS DETECTOR Bandwidth Adjust The deviation bandwidth of the detector response is determined by the combination of an on-chip capacitor and an external resistor to ground. AAAA AAAAAA AAAA AAAAAA AAAA AAAAAA AAAA AAAAAA 2 Fadj 1, 48 VEE 3 AFT Out AAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAAAAAAAAAAAA Frequency Adjust The free running frequency of the detector oscillator is defined by the combination of an on-chip capacitor and an external resistor, Radj from frequency adjust pin to ground. VEE, Negative Supply These pins are VEE supply for the coilless detector circuit. AFT Out The AFT is low pass filtered with a corner frequency below the audio bandwidth allowing the error to be added to the center frequency adjust signal at Fadj, Pin 2. The low frequency high pass corner is set by the external capacitor, Ct from AFT out (Pin 3) to AFT in (Pin 4) and external resistor, Rt from AFT out to Fadj (Pin 2). AAAA AAAAAA AAAA AAAAAA AAAA AAAAAA AAAA AAAAAA AAAA AAAAAA AAAA AAAAAA AAAA AAAAAA AAAA AAAAAA 4 AFT In 5 Det Gain 6 Det Out AAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAAAAAAAAAAAA AFT In The AFT in is used to set the buffer transfer function. Detector Gain The AFT buffer is used to set the buffer transfer function. Detector Output Set gain and output level of detector with resistor to Det Out Pin. Figure 3. Coilless Detector Internal Circuit i Current Amplifier i Phase Detector ICO VCC VCC IF 4 A*i A*i 5 AFT In Vref2 Vref1 BWadj 2Ib RI Ct Fadj 2 Rt 3 AFT Out 47 Rb 6 Det Out Rf 2I VEE 48, 1 MC13145 3.2-96 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA MC13145 Pin Symbol/Type 8 VEE Description Description VEE, Negative Supply Voltage 11 VCC 9 PRSCout Prescaler Output The prescaler output provides typically 500 mVpp drive to the fin pin of a PLL synthesizer. Conjugately matching the interface will increase the drive delivered to the PLL input. 9 PRSC Out 1.0 mA 8 VCC VEE 10 MC Dual Modulus Control Current Input This requires a current input of typically 200 App. 10 MC 11, 12 VCC 14 LNA In VCC, Positive Supply VCC pin is taken to the incoming positive battery or regulated dc voltage through a low impedance trace on the PCB. It decoupled to VEE ground at the pin of the IC. 17 LNA In The input is the base of the common emitter transistor. Minimum external matching is required to optimize the input return loss and gain. LNAout 15, 16 VEE 13, 15, & 16 VEE 1 13 Vref2 VEE 14 Vref1 LNAin 2.0 mA 11,12 VEE, Negative Supply VEE pin is taken to an ample dc ground plane through a low impedance path. The path should be kept as short as possible. A minimum two sided PCB is recommended so that ground returns can be easily made through via holes. VCC 17 LNAout 19 Mxr1In LNA Out The output is from the collector of the cascode transistor amplifier. The output may be conjugately matched with a shunt L (needed to dc bias the open collector), and series L and C network. 1st Mixer Input The mixer input impedance is broadband 50 for applications up to 2.4 GHz. It easily interfaces with a RF ceramic filter. VCC 20 LinAdj1 20 Lin Adj1 19 Mxr1 In 450 A MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 1st Mixer Linearity Control The mixer linearity control circuit accepts approximately 0 to 300 A control current to set the dynamic range of the mixer. An Input Third Order Intercept Point, IIP3 of 17 dBm may be achieved at 300 A of control current. MC13145 3.2-97 AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA MC13145 Pin Symbol/Type 21 Enable Description Description Enable Enable the receiver by pulling the pin up to VCC. 21 10 k Enable 26 VEE VEE, Negative Supply VEE supply for the mixer IF output. 27 27 IF1+ IF1+ 1 1st Mixer Outputs The Mixer is a differential open collector output configuration which is designed to use over a wide frequency range. The differential output of the mixer has back to back diodes across them to limit the output out ut voltage swing and to prevent revent pulling ulling of the VCO. Differential to single-ended circuit configuration and matching options are shown in the Test Circuit. Additional mixer gain can be achieved by matching the outputs for the desired passband Q. 26 VEE 28 IF1- 2 28 IF1- 22 On-board VCO Transistor The transistor has the emitter, base, collector, VCC, and VEE pins available. Internal biasing which is compensated for stability over temperature is provided. It is recommended that the base pin is pulled up to VCC through an RFC chosen for the particular oscillator center frequency . Collector 25 23 Emitter VCC 24 24 Base 25 VCC Base 18, 1 26 2 VCC, Positive Supply Voltage A VCC pin is provided for the VCO. The operating supply voltage range is from 2.7 Vdc to 6.5 Vdc. VEE 23 Emitter 2.0 mA 18, 26 VEE 500 A VEE, Negative Supply Voltage 22 Collector 29 Lin Adj2 31, VCC 29 Lin Adj2 30 Mxr2 In 2nd Mixer Input The mixer input impedance is broadband 50 . 30 Mxr2 In 31 MC13145 3.2-98 VCC 2nd Mixer Linearity Control The mixer linearity control circuit accepts approximately 0 to 400 A control current to set the dynamic range of the mixer. An Input Third Order Intercept Point, IIP3 of 17 dBm may be achieved at 400 A of control current. IIP3 default with no external bias is 10 dBm. 4500 A VCC, Positive Supply MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA MC13145 Pin Symbol/Type 32, 34 VEE Description Description VEE, Negative Supply Voltage VCC LO Out+ (to Mxr2) LO Out- 33 LO2 2nd Local Oscillator The 2nd LO input impedance is broadband 50 ; it is driven from an external 50 source. Typical level is -15 to -10 dBm. 33 LO2 390 A 32 VEE 35 IF2+ 35 IF2+ 2nd Mixer Outputs The Mixer is a differential open collector configuration. 34 VEE 36 IF2- 36 IF2- See Figure 4. 37 VEE 38 IF In IF Amplifier Input IF amplifier input source impedance is 330 .. The three stage amplifier has 40 dB of gain with 3.0 dB bandwidth of 40 MHz. 39, 40 IF Dec1, IF Dec2 IF Decoupling These pins are decoupled to VCC to provide stable operation of the limiting IF amplifier. 41 IF Out 42 VCC VCC, Positive Supply Voltage 7 RSSI RSSI The RSSI circuitry in the 2nd & 3rd amplifier stages outputs a current when the output of the previous stage enters limiting. The net result is a RSSI current which represents the logarithm of the IF input voltage. An external resistor to ground is used to provide a voltage output. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA VEE, Negative Supply Voltage IF Amplifier Output IF amplifier output load impedance is 330 . MC13145 3.2-99 MC13145 Figure 4. IF Amplifier Functional Diagram RSSI 39 IF Dec1 38 IF In 40 IF Dec2 41 IF Out AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA Pin Symbol/Type Description 43 VCC 44 Lim In Limiting Amplifier Input Limiting amplifier input source impedance is 330 . This amplifier has 84 dB of gain with 3.0 dB bandwidth of 40 MHz; this enables the IF and limiting ampliers chain to hard limit on noise. 45, 46 Lim Dec1, Lim Dec2 If Decoupling These pins are decoupled to VCC to provide stable operation of the 2nd IF limiting amplifier. 7 RSSI RSSI The RSSI circuitry in the 2nd, 3rd, & 4th amplifier stages outputs a current when the output of the previous stage enters limiting. The net result is a RSSI current which represents the logarithm of the IF input voltage. An external resistor to ground is used to provide a voltage output. See Figure 5. Description VCC, Positive Supply Voltage Figure 5. Limiter Amplifier Functional Diagram 7 RSSI 45 Lim Dec1 44 Lim In 46 Lim+ Demod Lim- Lim Dec2 MC13145 3.2-100 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13145 Figure 7. 2nd Mixer P1dB versus LO Drive Figure 6. 2nd Mixer Gain versus LO Drive 6.0 -6.0 VCC = 3.6 V TA = 25C PRF = -25 dBm Lin Adj Current = 400 A 5.0 4.0 -6.8 P1dB (dB) GAIN (dB) -6.4 -7.2 3.0 2.0 -7.6 VCC = 3.6 V TA = 25C Lin Adj Current = 400 A 1.0 -8.0 -20 -18 -16 -14 -12 0 -20 -10 -16 -14 -12 LO DRIVE (dBm) Figure 8. 2nd Mixer IP3/P1dB versus Lin Adj Current Figure 9. 2nd Mixer Gain versus Lin Adj Current 18 -10 -6.0 16 VCC = 3.6 V TA = 25C PLO = -15 dBm PRF = -25 dBm -6.2 14 IP3 12 VCC = 3.6 V TA = 25C PLO = -15 dBm Adj Channel = 75 kHz 10 8.0 GAIN (dB) dBm -18 LO DRIVE (dBm) -6.4 -6.6 6.0 P1dB 4.0 -6.8 2.0 0 0 100 200 300 400 500 -7.0 600 0 100 LIN ADJ CURRENT (A) 200 300 400 500 600 LIN ADJ CURRENT (A) Figure 10. Test Circuit for Figures 6 thru 9. Lin Adj Current RFin LO2in 5.1 k 29 Lin Adj2 VCC 10 n 30 Mxr2 In 33 LO2 IF2+ 35 IF2- 1.0 k 36 T1 IFout 16:1 T1 = Toko 600ENAS-A998EK MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13145 3.2-101 MC13145 APPLICATION INFORMATION Input Matching / Components It is desirable to use a RF ceramic or SAW filter before the mixer to provide image frequency rejection. The filter is selected based on cost, size and performance tradeoffs. Typical RF filters have 1.5 to 2.5 dB insertion loss. The evaluation PC board layout accommodates ceramic RF filters which are offered by various suppliers. Interface matching between the LNA, RF filter and the mixer will be required. The interface matching networks shown in the evaluation circuit are designed for 50 interfaces. 1st Mixer Output & 2nd Mixer Input Interface Matching In a wideband system the primary sensitivity of the receiver backend may be achieved before the last mixer. The evaluation circuit shows the matching and impedance transformation network bewtween the 1st mixer open collector differential outputs and 2nd mixer single ended 50 ohm input. This adjustable shielded transformer and tapped capacitor transform network does two things: 1) bandpass limits the 1st IF signal with a loaded Q of approximately 40 and 2) provides adequate second image rejection and a low cost alternative to a SAW filter. However, a SAW filter may be selected as a more costly alternative while providing improved 2nd image rejection and a fixed tuned 1st IF filter. 2nd Mixer & Limiting IF Matching / Filtering A simple LCR network is needed to interface the 2nd mixer differential outputs to 330 ohm ceramic filters or directly to the 330 ohm IF input. TDK, Toko and Murata offer single 10.7 MHz ceramic filters with various 3.0 dB bandwidths from 110 to 380 kHz. Murata offers a series-parallel resonator pair (part number KMFC545) with a 3.0 dB bandwidth of 325 kHz and a maximum insertion loss of 5.0 dB. However, even the series-parallel ceramic filter pair yields only a maximum bandpass of 650 kHz. In some data applications a wider band IF bandpass is necessary. Local Oscillators - VHF/UHF Applications The on-chip transistor may be used for HF and VHF local oscillator with higher order overtone crystals. It is recommended that a Butler overtone oscillator configuration is used. The crystal is driven from the emitter and is coupled to the high impedance base through a capacitive tap network. Operation at the desired overtone frequency is ensured by the parallel resonant circuit formed by an inductor and the tap capacitors and parasitic capacitances of the on-chip transistor and PC board. A high tolerance, high Q ceramic or air wound surface mount component may be used if the other components have tight enough tolerances; however, a variable inductor provides an adjustment for gain and frequency of the resonant tank ensuring lock up and start-up of the crystal oscillator. The overtone crystal is chosen with ESR of typically 80 ohms and 120 ohms maximum; if the resistive loss in the crystal is too high the performance of oscillator may be impacted by lower gain margins. A series LC network to ac ground (which is VCC) is comprised of the inductance of the base lead of the on-chip transistor and PC board traces and tap capacitors. Parasitic oscillations often occur in the 200 to 900 MHz range. A small resistor is placed in series with the base (pin 9) to cancel the MC13145 3.2-102 negative resistance associated with this undesired mode of oscillation. Since the base input impedance is so large a small resistor in the range of 27 to 68 ohms has very little effect on the desired Butler mode of oscillation. The crystal parallel capacitance, Co, provides a feedback path that is low enough in reactance at frequencies of 5th overtones or higher to cause trouble. Co has little effect near resonance because of the low impedance of the crystal motional arm (Rm-Lm-Cm). As the tunable inductor which forms the resonant tank with the tap capacitors is tuned off the crystal resonant frequency it may be difficult to tell if the oscillation is under crystal control. Frequency jumps may occur as the inductor is tuned. In order to eliminate this behavior an inductor, Lo, is placed in parallel with the crystal. Lo is chosen to be resonant with the crystal parallel capacitance, Co, at the desired operation frequency. The inductor provides a feedback path at frequencies well below resonance; however, the parallel tank network of the tap capacitors and tunable inductor prevent oscillation at these frequencies. Coilless Detector The coilless detector (see Figure 3) is unique and offers cost and performance advantages over the conventional quadrature detector. It consists of a current controlled oscillator (ICO) and a phase detector. The error current, I is also amplified to provide an output, and the output is duplicated and filtered and fed back to the oscillator to provide automatic fine tuning (AFT). The oscillator free running frequency, fo is set by Rf and is calculated by the following equation where C is approximately 4.0 pF: fo = 1/(8*Rf*C) The demodulator bandwidth is set by Rb and is shown in Figure 14. The AFT is filtered by Ct and Rt. The low pass pole creates a high pass pole in the overall demodulator frequency response at: A/(2**Ct*Rt) where A, the current gain = 10. Typical coilless detector output level is: Vout(peak) = (fpeak dev/fIF)*A*i*Rl For example, if peak deviation is 25 kHz, i = 250 A at fIF = 10.7 MHz, and RI is 50 k; then Vout is 292 mVp or 584 mVpp. The AFT Out pin is capable of voltage swings from about 300 mV to VCC - 300 mV. At these extreme values, the AFT circuit can become saturated and very long detector lock-up times may be observed. It is best, therefore, to limit the AFT Out swing from about 500 mV to VCC - 500 mV and attempt to center the AFT Out voltage at VCC/2 for a detector lock condition. As an example, for VCC = 2.7 V, the ideal AFT Out voltage at lock would be 1.35 V, with an available swing of 0.5 V to 2.2 V (1.7 V total). If the AFT tuning range is to be 500 kHz, this corresponds to an adjustment current of 1.0 MHz/fIF*i. From Figure 11, to set fIF at 10.7 MHz, i is approximately 240 A, and the total adjustment current range is therefor about 22.4 A over a 1.7 V total swing, or Rt = 75.9 k. At lock, MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13145 current equaling (AFT Out - Fadj)/Rt will be flowing into the Fadj node. This current then is approximately (1.35 V - 0.7 V)/75.9 k or 8.6 A. The Fadj resistor, Rf, is therefore equal to 0.7 V/(240 A + 8.6 A) or about 2.82 k. Figure 12. Fadj Resistor versus IF Frequency Figure 11. Fadj Current versus IF Frequency 500 7.0 450 6.0 Fadj RESISTOR (K ) CURRENT ( A) 400 350 300 250 200 5.0 4.0 3.0 2.0 150 10 15 1.0 5.0 20 15 IF FREQUENCY (MHz) Figure 13. BWadj Resistor versus BWadj Current Figure 14. IF Frequency versus BWadj Current 900 10.90 800 10.85 700 600 500 400 300 20 10.80 10.75 10.70 10.65 10.60 200 100 1.0 10 IF FREQUENCY (MHz) IF FREQUENCY (MHz) BWadj RESISTOR (K ) 100 5.0 2.0 3.0 4.0 5.0 6.0 10.55 1.0 BWadj CURRENT (A) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 2.0 3.0 4.0 5.0 6.0 BWadj CURRENT (A) MC13145 3.2-103 MC13145 Table 1. LNA S-Parameters: 3.6 Vdc Freq (MHz) S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 mag S22 Ang 25 0.84 -3.0 10.8 176 0.00005 -27 1.0 -1.2 50 0.84 -71 10.7 171 0.0004 76 1.0 -3.7 100 0.83 -15 10.3 162 0.0006 61 0.99 -4.9 150 0.81 -22 10. 154 0.0011 91 0.99 -7.3 200 0.78 -28 9.6 147 0.001 60 0.99 -9.7 300 0.73 -41 9.0 132 0.002 42 0.99 -15 400 0.66 -50 7.8 116 0.00070 22 0.95 -19 450 0.64 -54 7.4 111 0.0014 39 0.96 -21 500 0.62 -59 7.0 106 0.0009 69 0.96 -23 750 0.51 -77 5.5 80 0.0013 -51 0.94 -33 800 0.49 -80 5.2 75 0.002 -80 0.93 -36 850 0.47 -81 4.9 71 0.004 -120 0.92 -37 900 0.46 -82 4.6 67 0.0057 -130 0.92 -38 950 0.44 --82 4.3 62 0.008 -142 0.91 -40 1000 0.45 -81 3.9 58 0.014 -162 0.95 -41 1250 0.55 -94 3.5 47 0.029 140 0.099 -50 1500 0.48 -120 3.1 24 0.02 63 0.94 -65 1750 0.43 -126 2.5 6.9 0.0066 79 0.93 -74 2000 0.43 -135 2.1 -9.9 0.0099 129 0.92 -85 2250 0.45 -145 1.8 -27 0.017 133 0.91 -96 2500 0.47 -155 1.5 -43 0.021 132 0.89 -106 2750 0.51 -167 1.2 -60 0.03 130 0.88 -118 3000 0.55 -180 1.0 -78 0.039 120 0.85 -129 MC13145 3.2-104 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA L6 RFC LO2 J11 FRx RX MC Rx PD Det Out RSSI Rx EN C40 C50 IF1 C44 C36 R3 C43 C37 C15 C14 D1 C42 C38 Rx MC Rx EN C41 C39 VCC VCC L7 C3 C48 C13 C12 R8 C33 R12 R6 C35 R11 R10 R9 C34 C2 R7 C16 L1 C47 R13 C46 VCC 10 MC 21 Enable 4 AFT In 3 AFT Out 2 Fadj 47 BWadj 29 Lin Adj2 20 Lin Adj1 33 LO2 30 Mxr2 In 24 oscB 23 oscE 22 oscC 19 Mxr1 In 14 LNA In PRSC Out 9 MC13145 3.2-105 C32 C54 FRx RSSI R14 C20 L5 L4 RSSI 7 C31 R5 C29 C28 C27 C26 L8 C52 T1 R2 Det Out C30 C25 C19 L9 C9 C7 C8 C6 Det Out 6 Det Gain 5 Lim In 44 Lim Dec2 46 Lim Dec1 45 IF In 38 IF Out 41 IF Dec2 40 IF Dec1 39 IF2- 36 IF2+ 35 IF1- 28 IF1+ 27 LNA Out 17 C45 R1 VCC CF3 H5X2 1 2 3 4 5 6 7 8 9 10 JP1 C49 Mxr2 In J10 Rx PD C51 CF1 C1 L2 C5 CF2 TP2 J2 Gnd J1 VCC TP1 oscB J9 Mxr1 In J12 LNA In J3 U1 MC13145 Figure 15. MC13145 Evaluation PCB Schematic Typical Application C23 TP4 IF Out C21 TP5 C24 C22 VCC IF In J13 C17 C53 IF1 Out TP3 IF2 I/O JP2 C10 C11 VCC LNA Out J5 C18 J7 IF1 Out IF1 VCC MC13145 Figure 15. MC13145 Figure 16. Evaluation PCB Component Side Figure 17. Evaluation PCB Solder Side 2.25 2.25 2.5 CF1 TDK CF6118702 or TDK CF6118902 CF2,CF3 Toko Type CFSK Series SK107MX-AE-XXX C1,C3,C5,C7,C13,C17,C31, C41,C42,C43,C44,C48,C51 100 p C2 1.5 p C6,C12,C21,C23,C26,C27, C28,C29,C33,C34,C36,C37, C38,C39,C54 1.0 n C8,C15,C16,C18,C32,C53 0.01 C9 16 p C10 10 p C11 12 p C14 2.0-4.0 p C19 36 p C20 39 p C22,C24,C25,C30,C35 0.1 C40 10 C45 3.3 p C46,C47 2.0 p MC13145 3.2-106 2.5 C49 22 C50 1.0 R1,R7,R8,L8,L9,C52, J5,J7,J9,J10,J12,J13 No Component D1 MMBV809LT1 L1 6.8 n L2 5.6 n L4, L5 2.7 L6 RFC L7 2.7 n R2 10 R3 33 k R5 27 k R6,R11,R12,R14 51 k R9 68 k R10 2.85 k R13 51 or RFC T1 Toko A638AN-A099YWN U1 MC13145FTA J3,J11 J1,J2 JP1 SMA EF Johnson 142-0701-851 Bananna Johnson Components 108-0902-001 Header, 5x2 Default Units: Ohms, Microfarads, and Microhenries MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13145 Figure 18. Evaluation PCB Ground Plane 2.25 2.5 Figure 19. Evaluation PCB Power Plane 2.25 2.5 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13145 3.2-107 MC13146 Low Power Integrated Transmitter for ISM Band Applications LOW POWER DC - 1.8 GHz TRANSMITTER The MC13146 is an integrated RF transmitter targeted at ISM band applications. It features a 50 linear Mixer with linearity control, voltage controlled oscillator, divide by 64/65 dual modulus Prescaler and Low Power Amplifier (LPA). Together with the receiver chip (MC13145) and either baseband chip (MC33410 or MC33411A/B), a complete 900 MHz cordless phone system can be implemented. This device may be used in applications up to 1.8 GHz. * Low Distortion LPA: Pout_1 dB Compression Point 10 dBm * * * * * * * SEMICONDUCTOR TECHNICAL DATA High Mixer Linearity: IIP3 = 10 dBm 50 Mixer Input Impedance Differential Open Collector Mixer Output Low Power 64/65 Dual Modulus Prescaler (MC12054 type) 24 1 2.7 to 6.5 V Operation, Low Current Drain (25 mA @ 2.0 GHz) FTA SUFFIX PLASTIC PACKAGE CASE 977 (LQFP-24) Powerdown Mode: <60 A Usable up to 1.8 GHz ORDERING INFORMATION Device MC13146FTA Operating Temperature Range Package TA = -20 to 70C LQFP-24 V EE V CC PA In V EE V EE PAOut PIN CONNECTIONS 24 23 22 21 20 19 Mxr/Buf Out - 1 18 VEE Amp VEE 2 Mxr/Buf Out + 3 Mx Lin 4 Control 16 MC PRSC 15 VEE Mxr/Buf In 5 14 PRSC Out MC13146 3.2-108 7 8 9 10 11 12 V CC Base V EE Emitter Collector 13 VCC V EE VEE 6 ESD Sensitive -- Handle with Care 17 Enable This device contains 268 active transistors. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13146 MAXIMUM RATINGS AAAAAAAAAAAAAA AAAA AAAAA AAA AAAAAAAAAAAAAA AAAA AAAAA AAA AAAAAAAAAAAAAA AAAA AAAAA AAA AAAAAAAAAAAAAA AAAA AAAAA AAA Symbol Value Unit Power Supply Voltage Rating VCC(max) 7.0 Vdc Junction Temperature TJ(max) 150 C Tstg -65 to 150 C Storage Temperature Range NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Recommended Operating Conditions, Electrical Characteristics tables or Pin Descriptions section. 2. Meets Human Body Model (HBM) 100 V and Machine Model (MM) 25 V. ESD data available upon request. RECOMMENDED OPERATING CONDITIONS Characteristic Symbol Min Typ Max Unit VCC VEE 2.7 - - 0 6.5 - Vdc Vdc RF Frequency Range fRF 1.0 - 2500 MHz Ambient Temperature Range TA -20 - 70 C Maximum Input Signal Level PIF - - -10 15 - - dBm dBm Power Supply Voltage (TA = 25C) - with no damage - with minor performace degradation TRANSMITTER DC ELECTRICAL CHARACTERISTICS (TA = 25C, VCC = 3.6 Vdc, no input signal, unless otherwise noted) Symbol Min Typ Max Unit Total Supply Current (Enable = VCC) Itotal 15 18 21 mA Power Down Current (Enable = VEE) Characteristic Itotal - 30 100 A MC Current Input (High) Iih 70 100 130 A MC Current Input (Low) Iil -130 -100 -70 A Input high voltage Vih VCC - 0.4 - - V Input low voltge Vil - - 0.4 V Input Current Iin -50 - 50 A TRANSMITTER AC ELECTRICAL CHARACTERISTICS (TA = 25C, VCC = 3.6 Vdc, Enable = 3.6 Vdc, per Test Circuit shown in Figure 1, unless otherwise noted) Input Pin Measure Pin Symbol Min Typ Max Unit Amplifier Output Power (with external matching) @ 950 MHz; Pin = -19 dBm PAin PAout PA_PO -4.5 -3.3 -2.1 dBm Amplifier 1.0 dB Compression Point (@ 950 MHz = fIF_out) PAin PAout P1dBC.Pt. - 8.0 - dBm Amplifier Output Harmonics (with external matching) @ 950 MHz; Pin = -19 dBm 2nd 3rd PAin PAout Characteristics Mixer/Buffer Output (@ 950 MHz = fosc; Mixer input (Pin 5) pulled through 270 resistor) PLL Setup Time [Note 1] MC dBc PA - 2f PA - 3f -25 -35 -37 -52 - - Buf_out+ PMx/Buf_out -19 -18 -17 dBm PRSCout TPLL - 10 - nS IIP3 - 10 - dBm Mixer Input Third Order Intercept Point VCO Phase Noise (@ 10 kHz offset) Buf_out+ - -80 - dBc/Hz Prescalar Output Level (10 k || 8.0 pF Load) PRSCout 400 - 600 mVpp NOTES: 1. MC input (50%) to PRSCout rising output (50%) for proper modulus selection. 2. Typical performance parameters indicate the potential of the device under ideal operation conditions. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13146 3.2-109 MC13146 Figure 1. Test Circuit RF In 2.2 p 100 n 8.2 nH 100 pF 200 3.3 nH 2.2 p RF Out 24 23 22 21 20 19 1 18 Amp 100 p 2 Control 17 100 p Mixer/Buf Out 3 50 1.0 n 16 PRSC 4 68 k Enable 56 k MC 15 1.0 n 5 14 6 13 PRSC Out 270 7 8 9 100 p 10 11 12 1.8 nH 1.5 p 2.2 p 100 n 100 p 2.2 p D1* * MMBV809L 100 k 1.0 470 nH VCC Tuning Volts MC13146 3.2-110 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA MC13146 PIN FUNCTION DESCRIPTION Pin Symbol/Type 1, 3 Mxr/Buf Out-, Mxr/Buf Out+ Description Description Mixer/Buffer Outputs The Mixer/Buffer is a differential open collector configuration which designed to use over a wide frequency range for up conversion as well as direct conversion. Differential to single-ended circuit configuration and matching options are discussed in the Circuit Description section. 6.0 dB of additional Mixer gain can be achieved by conjugately matching the outputs at the desired RF frequency. 1 Mxr/Buf Out- 2 VEE 3 Mxr/Buff Out+ O 2 VEE 4 Mx Lin VEE, Negative Supply This pin is VEE supply for the mixer IF output. In the application PC board this pin is tied to a common VEE trace with other VEE pins. Mixer Linearity Control The mixer linearity control circuit accepts approximately 0 to 200 A control current to set the dynamic range of the mixer. An Input Third Order Intercept Point, IIP3 of 17 dBm may be achieved at 200 A of control current. VCC 4 Mx Lin AAAA AAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAAA AAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA 5 Mxr/Buf In 5 Mixer/Buffer Input The mixer input impedance is broadband 50 for applications up to 2.4 GHz. Mxr/Buf In 450 A 6, 7, 18, 24 VEE VEE, Negative Supply These pins are substrate connections on the IC. In the application PC board these pins are tied to a common VEE trace with other VEE pins. 6 VEE 7 VEE 18 VEE 24 VEE 8 VCC VCC, Supply Voltage Two VCC pins are provided for the Local Oscillator and LO Buffer Amplifier. The operating supply voltage range is from 2.7 Vdc to 6.5 Vdc. In the PCB layout, the VCC trace must be kept as wide as feasible to minimize inductive reactances along the trace. VCC should be decoupled to VEE at the IC pin. 8 VCC 9 Base 10 9 Base 10 VEE 11 Emitter VEE 11 Emitter 2.0 mA A 500 00 A 12 12 Collector Collector MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA On-board VCO Transistor The transistor has the emitter, base, collector, VCC d VEE pins i available. il bl Internal I t l biasing bi i which hi h is i and compensated for stability over temperature is rovided. It is recommended that the base pin in is provided. pulled up to VCC through an RFC chosen for the particular oscillator center frequency. The application circuit shows a Colpitts oscillator configuration. MC13146 3.2-111 AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA MC13146 PIN FUNCTION DESCRIPTION (continued) Pin Symbol/Type 13 VCC Description Description VCC, Supply Voltage 13 VCC 14 PRSC Out Prescaler Output The prescaler output provides 500 mVpp drive to the Fin Pin of a PLL synthesizer. Conjugately matching the interface will increase the drive delivered to the PLL input. 14 PRSC Out 1.0 mA 15 VEE 15 VEE, Negative Supply VCC VEE 16 MC Dual Modulus Control Current Input This requires a current input of typically 200 App. 16 MC 17 Enable Transmitter Enable Enable the transmitter by pulling the pin up to VCC. 17 10 k Enable 19 PAout 20, 21 VEE PA Out The output is an open collector of the cascode transistor low power amplifier (LPA); it is externally biased. The output may be conjugately matched with a shunt L, and series L and C network. 19 VEE, Negative Supply VEE pin is taken to an ample dc ground plane through a low impedance path. The path should be kept as short as possible. A two sided PCB is implemented so that ground returns can be easily made through via holes. PAout 20 VEE 21 22 PAin VEE 22 PAin Vref2 Vref1 2.0 mA PA In The input is the base of the common emitter transistor. Minimum external matching is required to optimize the input return loss and gain. 23 VCC 23 MC13146 3.2-112 VCC VCC, Positive Supply VCC pin is taken to the incoming positive battery or regulated dc voltage through a low impedance trace on the PCB. It is decoupled to VEE ground at the pin of the IC. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13146 CIRCUIT DESCRIPTION General The MC13146 consists of a low power amplifier, a 50 linear mixer with linearity control, divide by 64/65 dual modulus prescaler and LPA. This device is designated for use as the low power transmitter in analog and digital FM systems such as UHF and 800 MHz Special Mobile Radio (SMR), UHF Family Radio Services, PCS and 902 to 928 MHz cordless telephones. It features a mixer linearity control to preset or auto program the mixer dynamic range, an enable function and a wideband mixer output so the IC may be used either as an upconverter or for a direct conversion source. Additional details are covered in the Pin by Pin Description which shows the equivalent internal circuit and external circuit requirements. where Cv is the equivalent capacitance of the varactor at the control voltage. For higher frequency operation, a series tuned oscillator configuration is recommended. Table 1 contains the S-parameters for the VCO transistor in a common collector configuration. This information is useful for designing a VCO at other operating frequencies or for various other oscillator topologies. The output power (at Mix/Buf Out) can be varied by adjusting the value of R5 as illustrated in Figures 3 and 4. Figure 5 shows the typical operating window for the prescaler. Figure 2. Typical Tuning Performance Current Regulation/Enable The device features temperature compensating, voltage independent current regulators which are controlled by the enable function in which "high" powers up the IC. Local Oscillator/Voltage Control Oscillator The on-chip transistor operates with coaxial transmission line or LC resonant elements to over 1.8 GHz. Biasing is done with a temperature/voltage compensated current source in the emitter. A RFC from VCC to the base is recommended. The transistor can be operated in the classic Colpitts, Clapp, or Hartley configuration. The application circuit (Figure 8) depicts a parallel resonant VCO which can cover the entire 902 to 928 MHz frequency band with phase noise of approximately -80 dBc/Hz at a 10 kHz offset (see Figure 2). For this configuration, the LO will be driven with approximately 100 mVrms, and the frequency of oscillation can be approximated by: F osc + 2p ) C1 C2 C1 C2 1 ) ) 3.6 pF (L1 ) 1.8 nH) C3 Cv C3 Cv 930 925 920 915 Fout (Mhz) 910 905 900 VCC = 3.6 V TA = 25 C 895 890 880 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 CONTROL VOLTAGE (V) Figure 3. Mixer/Buffer Output versus 1st LO Input 1ST MIXER/BUFFER OUTPUT (dBm) Mixer: General The mixer is a double-balanced four quadrant multiplier biased class AB allowing for programmable linearity control via an external current source. An input third order intercept point of 20 dBm has been achieved. The mixer has a 50 single-ended RF input and open collector differential outputs. An onboard Local Oscillator transistor has the emitter, base and collector pinned out to implement a low phase noise VCO in various configurations. Additionally, a buffered prescaler output is provided for operation with a low frequency synthesizer. For direct conversion applications the input of the mixer may be terminated to ground through a 120 to 330 resistor. 935 -10 R5 = 120 -15 R5 = 180 R5 = 270 -20 -25 VCC = 3.6 Vdc TA = 25C fLO = 915 MHz -30 -35 -25 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA -20 -15 -10 -5.0 0 LO INPUT (dBm) MC13146 3.2-113 MC13146 Figure 4. Test Circuit for Figure 3. VCC 24 51 23 22 21 20 19 18 1 51 Amp 2 Control 16 3 Mixer/Buf Out 100 p PRSC 4 1.0 n R5 17 15 5 14 6 13 7 8 9 10 11 12 22 p 100 p VCC 100 p 51 VCC LO In 82 nH The linear gain of the Mixer/Buf when used as a buffer is approximately -5.0 to -8.0 dB. Figure 5. Typical Prescaler Operating Window 5.0 Mixer/Buffer Outputs The mixer outputs (Mixer/Buf Out + and Mixer/Buf Out -) are balanced, open collector. A shunt resistor of 200 minimum to VCC is recommended for stability. 0 -5.0 The outputs can be used as a single-ended driver or connected in a balanced-to-unbalanced configuration. If the single-ended driver configuration is used, the unused output must be tied directly to VCC. For the balanced-to-unbalanced configuration, an additional 3.0 to 6.0 dB of power gain can be achieved. Conjugate matching is easily accomplished to the desired load by the addition of a shunt and series element (see Table 2, S22 parameters). Pin (dBm) -10 -15 -20 VCC = 3.6 V TA = 25C -25 -30 0 500 1000 1500 2000 Fin (MHz) Mixer/Buffer Input The Mixer/Buf In pin is a broadband, 50 input used to drive the IF port of the mixer (see Table 2, S11 parameters).The Mixer/Buf In pin can be used in one of three modes: 11.A IF signal can be applied to this pin and up-converted to the desired RF frequency. 12. A resistor can be connected to ground, controlling the RF output power. 13. A resistor can be connected to VCC, disabling the entire mixer. MC13146 3.2-114 Low Power Amplifier (LPA) The LPA is internally biased at low supply current (approximately 2.0 mA emitter current) for optimal low power operation, yielding a 10 dBm 1.0 dB output power compression point. Input and output matching may be achieved at various frequencies using few external components (see Table 3 S-parameters). Typical power gain is 16 dB with the input/output conjugately matched to the source/load impedance. A minimum 200 shunt resistor from the output to VCC is recommended for stability. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13146 Figure 7. Output Power versus Temperature Figure 6. ICC versus Temperature 19.5 0 -2.0 19 -4.0 VCC = 3.6 V POWER (dBm) I CC , (mA) 18.5 18 17.5 PA Out Power (dBm) -6.0 -8.0 -10 -12 VCC = 3.6 V -14 -16 17 Buf Out Power (dBm) -18 16.5 -20 -5.0 10 25 40 55 70 85 TA, AMBIENT TEMPERATURE (C) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA -20 -20 -5.0 10 25 40 55 70 85 TA, AMBIENT TEMPERATURE (C) MC13146 3.2-115 MC13146 Figure 8. Applications Circuit RF In 2.2 p 100 p 1.0 n 10 n 10 nH 100 pF 200 3.3 nH 2.2 p RF Out 24 1.0 n 100 p 23 22 21 20 19 1 18 Amp 2 Control 17 100 p Mixer/Buf Out 3 51 1.0 n 16 PRSC 4 56 k Enable 56 k MC 15 1.0 n 5 14 6 13 PRSC Out 270 7 8 9 100 p 10 1.8 nH 11 12 L1 4.7 p C2 4.7 p C1 10 n 4.3 p C3 100 p D1* 10 * MMBV809L 10 k 100 p 1.0 k VCC (3.6 V) Tuning Volts MC13146 3.2-116 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13146 identical to the Test Circuit illustrated in Figure 1, although parameters can very significantly due to differences in PCB parasitics. Figures 10, 11, and 12 show the actual PCB component, ground and solder sides, respectively. Please refer to AN1687/D and AN1691/D for additional details and applications for the device. Evaluation PCB The evaluation PCB is a versatile board which allows the MC13146 to be configured as a basic transmitter, or to characterize individual operating parameters. The general purpose schematic and associated parts list for the PCB is given in Figure 9. This parts list build-up is Figure 9. Evaluation PCB Schematic Tx Dat C25 R15 C11 R16 L5 VCC J6 C12 R3 Tx In VCC TP2 R1 C13 C23 C22 C21 C20 C26 C27 R2 VCC Gnd J5 C1 LO In J1 TP1 R13 R12 Tx PD R5 C14 C24 R4 9 Base RF- C10 1 Mxr Out- J2 C2 C16 D1 C15 R6 11 L1 Emitter RF+ Mxr Out+ J3 C9 3 C17 12 VCC C3 IF In J7 VCC R7 5 R8 Collector VCC Mxr/Buf In C8 C28 R9 VCC PA In J8 4 C6 C18 L2 C19 L3 22 C4 Tx MC Default Units: Microfarads, Microhenries, and Ohms R14 Mx Lin R10 Tx Enable 16 17 PAIn PAOut J4 C7 PAOut 19 C5 MC L4 PRSC Out FTx 14 Enable R11 R1,R2,R3,R15,R16, C1,C11,C12,C13,C25, R6,R7,R9,L4,J1,J2,J7, C6,C10,C15,C24 R4 R5,R12,C19 R8 R10 R11 R13 R14 C2 C3,C8,C9,C26,C27 C4, C7 C5,C18,C21,C22,C23 C14 JP1 No component 100 k Short 270 56 k 68 k 51 200 2.2 p 100 p 2.2 p 1.0 n 1.0 C16 C17 C20 C28 L1 L2 L3 L5 D1 J3,J4,J8 J5,J6 JP1 U1 1 2 1.5 p 3 2.2 p 4 5 10 6 10 n 7 8 1.8 n 9 8.2 n 10 3.3 n H5X2 RFC MMBV809LT1 SMA EF Johnson 142-0701-851 Bananna Johnson Components 108-0902-001 Header, 5x2 MC13146FTA MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA FTx Tx MC Tx PD Tx Enable Tx In Tx Dat MC13146 3.2-117 MC13146 Figure 10. MC13146 Evaluation PCB Component Side 1.75 2.25 MC13146 3.2-118 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13146 Figure 11. MC13146 Evaluation PCB Ground Plane 2.25 1.75 Figure 12. MC13146 Evaluation PCB Solder Side 2.25 1.75 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13146 3.2-119 MC13146 Table 1. VCO Transistor S-Parameters 3.6 Vdc; 50 Load and Source Impedance; Common Collector Freq (MHz) S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang 25 0.99 -1 0.88 0 0.01 44 0.10 -7 50 0.99 -2 0.92 -1 0.02 61 0.09 -9 100 0.98 -5 0.95 -2 0.04 70 0.07 -37 150 0.98 -7 0.97 -3 0.06 73 0.07 -47 200 0.97 -10 1.04 -4 0.07 73 0.06 -86 300 0.95 -14 1.11 -8 0.10 71 0.09 -124 400 0.93 -19 1.23 -12 0.13 67 0.14 -149 450 0.92 -21 1.26 -14 0.15 66 0.15 -155 500 0.91 -23 1.30 -16 0.16 65 0.17 -159 600 0.86 -28 1.35 -20 0.19 61 0.20 -167 750 0.79 -37 1.46 -25 0.24 57 0.26 -172 800 0.79 -39 1.48 -26 0.25 56 0.28 -174 850 0.77 -42 1.48 -28 0.26 54 0.29 -177 900 0.74 -44 1.47 -31 0.28 52 0.28 -179 950 0.67 -49 1.53 -35 0.30 49 0.31 174 1000 0.61 -55 1.59 -38 0.33 47 0.34 171 1250 0.45 -81 1.61 -50 0.41 38 0.38 157 1500 0.35 -159 1.68 -67 0.53 16 0.38 134 1750 0.85 107 1.60 -100 0.57 -15 0.33 97 2000 1.02 76 1.17 -117 0.47 -32 0.18 86 2250 1.25 76 1.13 -125 0.55 -38 0.19 89 2500 1.58 53 0.84 -150 0.56 -64 0.09 57 MC13146 3.2-120 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13146 Table 2. Mixer Input/Output S-Parameters: 200 Pull-Up Resistor Freq (MHz) S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang 50 0.11 176.8 0.43 -4.2 0.001 38.7 0.60 -1.9 100 0.11 177.9 0.43 -7.5 0.002 19.8 0.60 -3.5 200 0.11 179.4 0.42 -13.7 0.001 28.3 0.60 -6.7 300 0.10 179.5 0.42 -20.7 0.001 69.8 0.61 -9.9 400 0.10 177.2 0.42 -27.3 0.001 106.3 0.61 -13.2 450 0.11 174.9 0.41 -31.1 0.001 135.2 0.62 -14.8 500 0.10 177.7 0.42 -34.1 0.002 138.2 0.62 -16.6 600 0.09 174.3 0.42 -41.8 0.003 150.5 0.63 -20.0 700 0.09 167.2 0.41 -49.3 0.005 158.7 0.64 -23.5 750 0.08 162.8 0.41 -53.9 0.006 166.0 0.65 -25.2 800 0.08 156.6 0.40 -58.4 0.008 166.5 0.65 -26.9 850 0.06 152.3 0.40 -62.7 0.009 171.2 0.66 -28.7 900 0.05 145.2 0.39 -66.4 0.012 177.6 0.66 -30.3 950 0.04 131.1 0.38 -71.6 0.015 -179.7 0.67 -31.9 1000 0.02 101.1 0.38 -76.7 0.019 178.0 0.68 -33.7 1250 0.08 -41.5 0.27 -96.8 0.042 137.1 0.73 -43.2 1500 0.40 -87.6 0.24 -90.2 0.036 129.9 0.78 -53.3 1750 0.50 -144.1 0.30 -114.0 0.058 142.8 0.86 -63.8 2000 0.51 -173.5 0.22 -133.0 0.174 151.6 0.96 -81.3 Table 3. LPA S-Parameters: 200 Pull-Up Resistor Freq (MHz) S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang 200 0.76 -26.0 9.3 148.1 0.0006 73.3 0.60 -12.4 300 0.71 -37.5 8.5 135.2 0.0011 74.4 0.60 -18.5 400 0.67 -47.2 7.6 124.5 0.0011 79.6 0.61 -24.6 450 0.64 -51.7 7.2 118.6 0.0010 66.0 0.62 -28.3 500 0.62 -55.4 6.9 114.2 0.0011 45.4 0.62 -31.6 600 0.58 -63.7 6.3 105.3 0.0012 16.7 0.64 -38.8 700 0.54 -72.1 5.6 95.2 0.0016 -20.9 0.66 -45.6 750 0.52 -74.6 5.4 91.8 0.0013 -36.9 0.66 -48.5 800 0.51 -77.9 5.2 87.7 0.0023 -50.8 0.67 -52.6 850 0.49 -80.3 5.0 83.8 0.0033 -63.6 0.68 -56.1 900 0.49 -83.5 4.7 79.6 0.0044 -78.7 0.68 -60.3 950 0.48 -85.4 4.5 77.2 0.0060 -90.3 0.68 -63.2 1000 0.48 -88.8 4.3 74.7 0.0082 -97.6 0.68 -65.8 1250 0.51 -102.7 3.7 58.8 0.0249 -136.6 0.73 -74.6 1500 0.48 -119.7 3.3 37.6 0.0273 172.0 0.90 -87.7 1750 0.47 -130.0 2.7 20.5 0.0290 166.5 0.97 -103.7 2000 0.51 -136.7 2.2 -1.1 0.0386 164.1 1.01 -119.1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13146 3.2-121 NARROWBAND FM COILLESS DETECTOR IF SUBSYSTEM FOR CELLULAR AND ANALOG APPLICATIONS The MC13150 is a narrowband FM IF subsystem targeted at cellular and other analog applications. Excellent high frequency performance is achieved, with low cost, through use of Motorola's MOSAIC 1.5 RF bipolar process. The MC13150 has an onboard Colpitts VCO for Crystal controlled second LO in dual conversion receivers. The mixer is a double balanced configuration with excellent third order intercept. It is useful to beyond 200 MHz. The IF amplifier is split to accommodate two low cost cascaded filters. RSSI output is derived by summing the output of both IF sections. The quadrature detector is a unique design eliminating the conventional tunable quadrature coil. Applications for the MC13150 include cellular, CT-1 900 MHz cordless telephone, data links and other radio systems utilizing narrowband FM modulation. * Linear Coilless Detector * * * * * * * * SEMICONDUCTOR TECHNICAL DATA 24 Adjustable Demodulator Bandwidth 1 FTA SUFFIX PLASTIC PACKAGE CASE 977 (LQFP-24) 2.5 to 6.0 Vdc Operation Low Drain Current: < 2.0 mA Typical Sensitivity of 2.0 V for 12 dB SINAD IIP3, Input Third Order Intercept Point of 0 dBm RSSI Range of Greater Than 100 dB Internal 1.4 k Terminations for 455 kHz Filters 32 Split IF for Improved Filtering and Extended RSSI Range 1 ORDERING INFORMATION Operating Temperature Range Device MC13150FTA LQFP-24 TA = -40 to +85C MC13150FTB FTB SUFFIX PLASTIC PACKAGE CASE 873 (LQFP-32) Package LQFP-32 PIN CONNECTIONS VEE1 LOe LOb Enable RSSI Mix in VEE1 VCC (N/C) LOe LOb VCC (N/C) Enable RSSI LQFP-32 Mix in LQFP-24 24 23 22 21 20 19 32 31 29 28 27 26 25 MixOut 1 30 24 RSSIb Mixout 1 VCC1 2 17 DETout IFin 3 16 VEE2 IFin 4 21 VEE2 15 DET Gain IFd1 5 20 DETGain 18 RSSIb Mixer Mixer VCC1 2 IFd2 5 IFout 6 14 AFTFilt Limiter 13 AFT out VCC (N/C) 3 22 VEE (N/C) IF VCC (N/C) 6 IFd2 7 Detector 4 Detector IFd1 IF 23 DETout Limiter MC13150 3.2-122 LIMd2 BWAdj FAdj 11 12 13 14 15 16 FAdj LIMd1 10 BWAdj LIM in 9 LIM d2 VCC (N/C) 12 LIM d1 11 VCC (N/C) 10 LIM in 9 V CC2 8 18 AFTFilt 17 AFTout IFout 8 7 19 VEE (N/C) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS Narrowband FM Coilless Detector IF Subsystem V CC2 NOT RECOMMENDED FOR NEW DESIGNS MC13150 MC13150 AAAAAAAAAA AAA AAAAA AAAAA AAAA AAAAAAAAAA AAA AAAAA AAAAA AAAA AAAAAAAAAA AAA AAAAA AAAAA AAAA AAAAAAAAAA AAA AAAAA AAAAA AAAA Rating NOT RECOMMENDED FOR NEW DESIGNS Pin Symbol Value Unit Power Supply Voltage 2, 9 VCC(max) 6.5 Vdc Junction Temperature - TJmax +150 C Storage Temperature Range - Tstg -65 to +150 C NOTE: 1. Devices should not be operated at or outside these values. The "Recommended Operating Limits" provide for actual device operation. 2. ESD data available upon request. RECOMMENDED OPERATING CONDITIONS AAAAAAAAAAAAA AAAA AAAAAA AAAAAA AAAA AAAAAAAAAAAAA AAAA AAAAAA AAAAAA AAAA AAAAAAAAAAAAA AAAA AAAAAA AAAAAA AAAA AAAAAAAAAAAAA AAAA AAAAAA AAAAAA AAAA AAAAAAAAAAAAA AAAA AAAAAA AAAAAA AAAA AAAAAAAAAAAAA AAAA AAAAAA AAAAAA AAAA AAAAAAAAAAAAA AAAA AAAAAA AAAAAA AAAA AAAAAAAAAA AAAAA AAAA AAAAAA AAAA AAAA AAAA AAAA AAAAAAAAAA AAAAA AAAA AAAAAA AAAA AAAA AAAA AAAA AAAAAAAAAA AAAAA AAAA AAAAAA AAAA AAAA AAAA AAAA AAAAAAAAAA AAAAA AAAA AAAAAA AAAA AAAA AAAA AAAA AAAAAAAAAA AAAAAAAA AAAAA AAAAA AAA AAA AAAA AAA AAAAAAAAAA AAAAAAAA AAAAA AAAAA AAA AAA AAAA AAA AAAAAAAAAA AAAAAAAA AAAAA AAAAA AAA AAA AAAA AAA AAAAAAAAAA AAAAAAAA AAAAA AAAAA AAA AAA AAAA AAA AAAAAAAAAA AAAAAAAA AAAAA AAAAA AAA AAA AAAA AAA AAAAAAAAAA AAAAAAAA AAAAA AAAAA AAA AAA AAAA AAA AAAAAAAAAA AAAAAAAA AAAAA AAAAA AAA AAA AAAA AAA AAAAAAAAAA AAAAAAAA AAAAA AAAAA AAA AAA AAAA AAA AAAAAAAAAA AAAAAAAA AAAAA AAAAA AAA AAA AAAA AAA AAAAAAAAAA AAAAAAAA AAAAA AAAAA AAA AAA AAAA AAA AAAAAAAAAA AAAAAAAA AAAAA AAAAA AAA AAA AAAA AAA AAAAAAAAAA AAAAAAAA AAAAA AAAAA AAA AAA AAAA AAA AAAAAAAAAA AAAAAAAA AAAAA AAAAA AAA AAA AAAA AAA AAAAAAAAAA AAAAAAAA AAAAA AAAAA AAA AAA AAAA AAA AAAAAAAAAA AAAAAAAA AAAAA AAAAA AAA AAA AAAA AAA AAAAAAAAAA AAAAAAAA AAAAA AAAAA AAA AAA AAAA AAA AAAAAAAAAA AAAAAAAA AAAAA AAAAA AAA AAA AAAA AAA AAAAAAAAAA AAAAAAAA AAAAA AAAAA AAA AAA AAAA AAA AAAAAAAAAA AAAAAAAA AAAAA AAAAA AAA AAA AAAA AAA AAAAAAAAAA AAAAAAAA AAAAA AAAAA AAA AAA AAAA AAA AAAAAAAAAA AAAAAAAA AAAAA AAAAA AAA AAA AAAA AAA AAAAAAAAAA AAAAAAAA AAAAA AAAAA AAA AAA AAAA AAA Rating Power Supply Voltage TA = 25C -40C TA 85C Pin Symbol Value Unit 2, 9 21, 31 VCC VEE 2.5 to 6.0 0 Vdc 32 fin 10 to 500 MHz (See Figure 22) Input Frequency Ambient Temperature Range - TA -40 to +85 C Input Signal Level 32 Vin 0 dBm DC ELECTRICAL CHARACTERISTICS (TA = 25C, VCC1 = VCC2 = 3.0 Vdc, No Input Signal.) Characteristics Total Drain Current (See Figure 2) Condition Pin Symbol Min Typ Max Unit VS = 3.0 Vdc 2+9 ITOTAL - 1.7 3.0 mA - 2+9 - - 40 - nA Supply Current, Power Down (See Figure 3) AC ELECTRICAL CHARACTERISTICS (TA = 25C, VS = 3.0 Vdc, fRF = 50 MHz, fLO = 50.455 MHz, LO Level = -10 dBm, see Figure 1 Test Circuit*, unless otherwise specified.) Characteristics Condition Pin Symbol Min Typ Max Unit fmod = 1.0 kHz; fdev = 5.0 kHz 32 - - -100 - dBm RSSI Dynamic Range (See Figure 7) - 25 - - 100 - dB Input 1.0 dB Compression Point Input 3rd Order Intercept Point (See Figure 18) - - - - 1.0 dB C. Pt. IIP3 - - -11 -1.0 - - dBm Measured with No IF Filters - BW adj - 26 - kHz/A Pin = -30 dBm; PLO = -10 dBm 32 - - 10 - dB Single-Ended 32 - - 200 - - 1 - - 1.5 - k - 29 - 30 63 100 A IF and Limiter RSSI Slope Figure 7 25 - - 0.4 - A/dB IF Gain Figure 8 4, 8 - - 42 - dB IF Input & Output Impedance - 4, 8 - - 1.5 - k Limiter Input Impedance - 10 - - 1.5 - k Limiter Gain - - - - 96 - dB 12 dB SINAD Sensitivity (See Figure 15) Coilless Detector Bandwidth Adjust (See Figure 11) MIXER Conversion Voltage Gain (See Figure 5) Mixer Input Impedance Mixer Output Impedance LOCAL OSCILLATOR LO Emitter Current (See Figure 26) IF & LIMITING AMPLIFIERS SECTION * Figure 1 Test Circuit uses positive (VCC) Ground. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13150 3.2-123 NOT RECOMMENDED FOR NEW DESIGNS MAXIMUM RATINGS MC13150 AC ELECTRICAL CHARACTERISTICS (continued) (TA = 25C, VS = 3.0 Vdc, fRF = 50 MHz, fLO = 50.455 MHz, LO Level = -10 dBm, see Figure 1 Test Circuit*, unless otherwise specified.) Characteristics Condition Pin Symbol Min Typ Max Unit Frequency Adjust Current Figure 9, fIF = 455 kHz 16 - 41 49 56 A Frequency Adjust Voltage Figure 10, fIF = 455 kHz 16 - 600 650 700 mVdc Bandwidth Adjust Voltage Figure 12, I15 = 1.0 A 15 - - 570 - mVdc - 23 - - 1.36 - Vdc fdev = 3.0 kHz 23 - 85 122 175 mVrms Recovered Audio Voltage * Figure 1 Test Circuit uses positive (VCC) Ground. Figure 1. Test Circuit LO Input VEE1 10 220 n + 100 n 1:4 Z Xformer Mixer In Enable 49.9 RSSI 100 n 31 32 220 n Mixer Out 1 1.5 k 30 29 28 27 25 2 RSSI Buffer 24 Mixer VCC1 Detector Output 23 Local Oscillator 100 p RSSI Buffer 3 IF In 26 VEE1 22 RL 100 k 220 n 49.9 4 VEE2 21 5 20 220 n 220 n 6 (6) IF 220 n 7 IF Amp Out 8 1.5 k Limiter In 19 220 n 17 VCC2 9 10 11 12 220 n 13 14 220 n 220 n 220 n 15 I15 10 + VEE2 18 Limiter 220 n RS 100 k 100 k V18-V17 = 0; fIF = 455 kHz 16 I16 49.9 This device contains 292 active transistors. MC13150 3.2-124 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS Detector DC Output Voltage (See Figure 25) Detector NOT RECOMMENDED FOR NEW DESIGNS DETECTOR MC13150 General The MC13150 is a very low power single conversion narrowband FM receiver incorporating a split IF. This device is designated for use as the backend in analog narrowband FM systems such as cellular, 900 MHz cordless phones and narrowband data links with data rates up to 9.6 k baud. It contains a mixer, oscillator, extended range received signal strength indicator (RSSI), RSSI buffer, IF amplifier, limiting IF, a unique coilless quadrature detector and a device enable function (see Package Pin Outs/Block Diagram). Low Current Operation The MC13150 is designed for battery and portable applications. Supply current is typically 1.7 mAdc at 3.0 Vdc. Figure 2 shows the supply current versus supply voltage. Enable The enable function is provided for battery powered operation. The enabled pin is pulled down to enable the regulators. Figure 3 shows the supply current versus enable voltage, Venable (relative to VCC) needed to enable the device. Note that the device is fully enabled at VCC - 1.3 Vdc. Figure 4 shows the relationship of enable current, Ienable to enable voltage, Venable. Mixer The mixer is a double-balanced four quadrant multiplier and is designed to work up to 500 MHz. It has a single ended input. Figure 5 shows the mixer gain and saturated output response as a function of input signal drive and for -10 dBm LO drive level. This is measured in the application circuit shown in Figure 15 in which a single LC matching network is used. Since the single-ended input impedance of the mixer is 200 , an alternate solution uses a 1:4 impedance transformer to match the mixer to 50 input impedance. The linear voltage gain of the mixer alone is approximately 4.0 dB (plus an additional 6.0 dB for the transformer). Figure 6 shows the mixer gain versus the LO input level for various mixer input levels at 50 MHz RF input. The buffered output of the mixer is internally loaded, resulting in an output impedance of 1.5 k. Local Oscillator The on-chip transistor operates with crystal and LC resonant elements up to 220 MHz. Series resonant, overtone crystals are used to achieve excellent local oscillator stability. 3rd overtone crystals are used through about 65 to 70 MHz. Operation from 70 MHz up to 200 MHz is feasible using the on-chip transistor with a 5th or 7th overtone crystal. To enhance operation using an overtone crystal, the internal transistor's bias is increased by adding an external resistor from Pin 29 (in 32 pin QFP package) to VEE to keep the oscillator on continuously or it may be taken to the enable pin to shut it off when the receiver is disabled. -10 dBm of local oscillator drive is needed to adequately drive the mixer (Figure 6). The oscillator configurations specified above are described in the application section. RSSI The received signal strength indicator (RSSI) output is a current proportional to the log of the received signal amplitude. The RSSI current output is derived by summing the currents from the IF and limiting amplifier stages. An external resistor at Pin 25 (in 32 pin QFP package) sets the voltage range or swing of the RSSI output voltage. Linearity of the RSSI is optimized by using external ceramic bandpass filters which have an insertion loss of 4.0 dB. The RSSI circuit is designed to provide 100+ dB of dynamic range with temperature compensation (see Figures 7 and 23 which show the RSSI response of the applications circuit). RSSI Buffer The RSSI buffer has limitations in what loads it can drive. It can pull loads well towards the positive and negative supplies, but has problems pulling the load away from the supplies. The load should be biased at half supply to overcome this limitation. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13150 3.2-125 NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS MC13150 CIRCUIT DESCRIPTION MC13150 10-2 ISUPPLY, SUPPLY CURRENT (A) ISUPPLY, SUPPLY CURRENT (mA) 1.6 1.2 0.8 TA = 25C 0 1.5 2.5 3.5 4.5 5.5 6.5 10-4 10-5 10-6 10-7 10-8 10-9 0.7 0.9 1.1 1.3 1.5 VENABLE, SUPPLY VOLTAGE (Vdc) VENABLE, ENABLE VOLTAGE (Vdc) Figure 4. Enable Current versus Enable Voltage Figure 5. Mixer IF Output Level versus RF Input Level 20 VCC = 3.0 Vdc TA = 25C 60 MIXER IF OUTPUT LEVEL (dBm) IENABLE, ENABLE CURRENT ( A) VCC = 3.0 Vdc TA = 25C VENABLE Measured Relative to VCC 10-3 10-10 0.5 7.5 70 50 40 30 20 10 0 -10 0 0.4 0.8 1.2 1.6 VEE = -3.0 Vdc TA = 25C 10 0 -10 -20 fRF = 50 MHz; fLO = 50.455 MHz LO Input Level = -10 dBm (100 mVrms) (Rin = 50 ; Rout = 1.4 k -30 -40 -50 -50 2.0 -40 -30 -20 -10 0 VENABLE, ENABLE VOLTAGE (Vdc) RF INPUT LEVEL (dBm) Figure 6. Mixer IF Output Level versus Local Oscillator Input Level Figure 7. RSSI Output Current versus Input Signal Level 10 20 -20 0 50 20 0 VEE = -3.0 Vdc TA = 25C RSSI OUTPUT CURRENT (A) RF In = 0 dBm MIXER IF OUTPUT LEVEL (dBm) NOT RECOMMENDED FOR NEW DESIGNS 2.0 0.4 Figure 3. Supply Current versus Enable Voltage -20 dBm -20 -40 dBm -40 -60 -80 -60 fRF = 50 MHz; fLO = 50.455 MHz Rin = 50 ; Rout = 1.4 k 30 VCC = 3.0 Vdc f = 50 MHz fLO = 50.455 MHz 455 kHz Ceramic Filter See Figure 15 20 10 0 -50 -40 -30 LO DRIVE (dBm) MC13150 3.2-126 40 -20 -10 0 -120 -100 -80 -60 -40 SIGNAL INPUT LEVEL (dBm) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS Figure 2. Supply Current versus Supply Voltage Overall RSSI linearity is dependent on having total midband attenuation of 10 dB (4.0 dB insertion loss plus 6.0 dB impedance matching loss) for the filter. The output of the IF amplifier is buffered and the impedance is 1.5 k. Limiter The limiter section is similar to the IF amplifier section except that six stages are used. The fixed internal input impedance is 1.5 k. The total gain of the limiting amplifier section is approximately 96 dB. This IF limiting amplifier section internally drives the quadrature detector section. Figure 9. Fadj Current versus IF Frequency 50 120 45 100 Fadj CURRENT ( A) IF AMP GAIN (dB) Figure 8. IF Amplifier Gain versus IF Frequency 40 35 Vin = 100 V Rin = 50 Rout = 1.4 k BW (3.0 dB) = 2.4 MHz TA = 25C 30 25 20 0.01 VCC = 3.0 Vdc Slope at 455 kHz = 9.26 kHz/A 80 60 40 20 0 0.1 800 1.0 0 10 200 400 600 f, FREQUENCY (MHz) f, IF FREQUENCY (kHz) Figure 10. Fadj Voltage versus Fadj Current Figure 11. BWadj Current versus IF Frequency 800 1000 480 500 3.5 VCC = 3.0 Vdc TA = 25C VCC = 3.0 Vdc BW 26 kHz/A 3.0 BWadj CURRENT ( A) 750 700 650 2.5 2.0 1.5 1.0 0.5 600 0 20 40 60 80 100 Fadj CURRENT (A) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 0 400 420 440 460 f, IF FREQUENCY (kHz) MC13150 3.2-127 NOT RECOMMENDED FOR NEW DESIGNS IF Amplifier The first IF amplifier section is composed of three differential stages. This section has internal dc feedback and external input decoupling for improved symmetry and stability. The total gain of the IF amplifier block is approximately 42 dB at 455 kHz. Figure 8 shows the gain of the IF amplifier as a function of the IF frequency. The fixed internal input impedance is 1.5 k; it is designed for applications where a 455 kHz ceramic filter is used and no external output matching is necessary since the filter requires a 1.5 k source and load impedance. Fadj VOLTAGE (mVdc) NOT RECOMMENDED FOR NEW DESIGNS MC13150 10-4 Detector DC Output = ((RL + RS)/RS) 0.68 Vdc Thus, RS = RL sets the output at 2 x 0.68 = 1.36 V; RL = 2RS sets the output at 3 x 0.68 = 2.0 V. Figure 13. Demodulator Output versus Frequency 10 VCC = 3.0 Vdc TA = 25C 10-6 2.5 BWadj VOLTAGE (Vdc) MC13150 3.2-128 So, for example, 150 k and 1.0 F give a 3.0 dB point of 4.5 Hz. The recovered audio is set by RL to give roughly 50mV per kHz deviation per 100 k of resistance. The dc level can be shifted by RS from the nominal 0.68 V by the following equation: Figure 12. BWadj Current versus BWadj Voltage 10-5 10-7 2.3 RTCT = 0.68/f3dB. DEMODULATOR OUTPUT (dB) 10-3 voltage across the bandwidth resistor, RB from Figure 12 is VCC - 2.44 Vdc = 0.56 Vdc for VCC = 3.0 Vdc, so RB = 0.56V/1.0 A = 560 k. Actually the locking range will be 13 kHz while the audio bandwidth will be approximately 8.4 kHz due to an internal filter capacitor. This is verified in Figure 13. For some applications it may be desirable that the audio bandwidth is increased; this is done by reducing RB. Reducing RB widens the detector bandwidth and improves the distortion at high input levels at the expense of 12 dB SINAD sensitivity. The low frequency 3.0dB point is set by the tuning circuit such that the product 2.7 0 RB = 560 k -10 -20 -30 -40 -50 0.1 VCC = 3.0 Vdc TA = 25C fRF = 50 MHz fLO = 50.455 MHz LO Level = -10 dBm No IF Bandpass Filters fdev = 4.0 kHz 1.0 RB = 1.0 M 10 100 f, FREQUENCY (kHz) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS Coilless Detector The quadrature detector is similar to a PLL. There is an internal oscillator running at the IF frequency and two detector outputs. One is used to deliver the audio signal and the other one is filtered and used to tune the oscillator. The oscillator frequency is set by an external resistor at the Fadj pin. Figure 9 shows the control current required for a particular frequency; Figure 10 shows the pin voltage at that current. From this the value of RF is chosen. For example, 455 kHz would require a current of around 50 A. The pin voltage (Pin 16 in the 32 pin QFP package) is around 655mV giving a resistor of 13.1 k. Choosing 12 k as the nearest standard value gives a current of approximately 55 A. The 5.0 A difference can be taken up by the tuning resistor, RT. The best nominal frequency for the AFTout pin (Pin 17) would be half supply. A supply voltage of 3.0 Vdc suggests a resistor value of (1.5 - 0.655)V/5.0 A = 169 k. Choosing 150 k would give a tuning current of 3/150 k = 20 A. From Figure 9 this would give a tuning range of roughly 10 kHz/A or 100 kHz which should be adequate. The bandwidth can be adjusted with the help of Figure 11. For example, 1.0 A would give a bandwidth of 13 kHz. The BWadj CURRENT (A) NOT RECOMMENDED FOR NEW DESIGNS MC13150 MC13150 Evaluation PC Board The evaluation PCB is very versatile and is intended to be used across the entire useful frequency range of this device. The center section of the board provides an area for attaching all SMT components to the circuit side and radial leaded components to the component ground side (see Figures 29 and 30). Additionally, the peripheral area surrounding the RF core provides pads to add supporting and interface circuitry as a particular application dictates. There is an area dedicated for a LNA preamp. This evaluation board will be discussed and referenced in this section. Input Matching Components The input matching circuit shown in the application circuit schematic (Figure 15) is a series L, shunt C single L section which is used to match the mixer input to 50 . An alternative input network may use 1:4 surface mount transformers or BALUNs. The 12 dB SINAD sensitivity using the 1:4 impedance transformer is typically -100 dBm for fmod = 1.0 kHz and fdev = 5.0 kHz at fin = 50 MHz and fLO = 50.455 MHz (see Figure 14). It is desirable to use a SAW filter before the mixer to provide additional selectivity and adjacent channel rejection and improved sensitivity. SAW filters sourced from Toko (Part # SWS083GBWA) and Murata (Part # SAF83.16MA51X) are excellent choices to easily interface with the MC13150 mixer. They are packaged in a 12 pin low profile surface mount ceramic package. The center frequency is 83.161 MHz and the 3.0 dB bandwidth is 30 kHz. Figure 14. S+N+D, N+D, N, 30% AMR versus Input Signal Level 20 10 S+N+D 0 -10 -20 -30 -40 -50 VCC = 3.0 Vdc fmod = 1.0 kHz fdev = 5.0 kHz fin = 50 MHz N+D 30% AMR fLO = 50.455 MHz LO Level = -10 dBm See Figure 15 N -60 -120 -100 -80 -60 -40 INPUT SIGNAL (dBm) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13150 3.2-129 NOT RECOMMENDED FOR NEW DESIGNS shown in Figures 27 and 28 for the application circuit in Figure 15 and for the 83.616 MHz crystal oscillator circuit in Figure 16. Component Selection The evaluation PC board is designed to accommodate specific components, while also being versatile enough to use components from various manufacturers and coil types. The applications circuit schematic (Figure 15) specifies particular components that were used to achieve the results shown in the typical curves but equivalent components should give similar results. Component placement views are S+N+D, N+D, N, 30% AMR (dB) NOT RECOMMENDED FOR NEW DESIGNS APPLICATIONS INFORMATION MC13150 Figure 15. Application Circuit RF/IF Input (4) Enable (5) RSSI 11 p 100 n 51 100 n 32 31 30 29 28 27 26 82 k 25 VEE1 (2) 455 kHz IF Ceramic Filter 2 RSSI Buffer 24 1 Mixer VCC1 Detector Output 23 RSSI Buffer 1.0 n Local Oscillator 3 RL 150 k 22 VEE2 4 21 5 20 RS 150 k 1.0 n 100 n 100 n 6 IF 7 Limiter 1.0 n (6) 19 18 100 n 17 8 1.0 CT VCC2 9 10 11 12 13 14 15 16 150 k RT 100 n 455 kHz IF Ceramic Filter 100 n 10 560 k RB 12 k RF (6) Coilless Detector Circuit + VCC NOTES: 1. Alternate solution is 1:4 impedance transformer (sources include Mini Circuits, Coilcraft and Toko). 2. 455 kHz ceramic filters (source Murata CFU455 series which are selected for various bandwidths). 3. For external LO source, a 51 pull-up resistor is used to bias the base of the on-board transistor as shown in Figure 15. Designer may provide local oscillator with 3rd, 5th, or 7th overtone crystal oscillator circuit. The PC board is laid out to accommodate external components needed for a Butler emitter coupled crystal oscillator (see Figure 16). 4. Enable IC by switching the pin to VEE. 5. The resistor is chosen to set the range of RSSI voltage output swing. 6. Details regarding the external components to setup the coilless detector are provided in the application section. MC13150 3.2-130 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS (1) 180 nH Detector NOT RECOMMENDED FOR NEW DESIGNS (3) LO Input A series LC network to ac ground (which is VCC) is comprised of the inductance of the base lead of the on-chip transistor and PC board traces and tap capacitors. Parasitic oscillations often occur in the 200 to 800 MHz range. A small resistor is placed in series with the base (Pin 28) to cancel the negative resistance associated with this undesired mode of oscillation. Since the base input impedance is so large, a small resistor in the range of 27 to 68 has very little effect on the desired Butler mode of oscillation. The crystal parallel capacitance, Co, provides a feedback path that is low enough in reactance at frequencies of 5th overtones or higher to cause trouble. Co has little effect near resonance because of the low impedance of the crystal motional arm (Rm-Lm-Cm). As the tunable inductor, which forms the resonant tank with the tap capacitors, is tuned off the crystal resonant frequency, it may be difficult to tell if the oscillation is under crystal control. Frequency jumps may occur as the inductor is tuned. In order to eliminate this behavior an inductor, Lo, is placed in parallel with the crystal. Lo is chosen to resonant with the crystal parallel capacitance, Co, at the desired operation frequency. The inductor provides a feedback path at frequencies well below resonance; however, the parallel tank network of the tap capacitors and tunable inductor prevent oscillation at these frequencies. NOT RECOMMENDED FOR NEW DESIGNS Local Oscillators HF & VHF Applications In the application schematic, an external sourced local oscillator is utilized in which the base is biased via a 51 resistor to VCC. However, the on-chip grounded collector transistor may be used for HF and VHF local oscillators with higher order overtone crystals. Figure 16 shows a 5th overtone oscillator at 83.616 MHz. The circuit uses a Butler overtone oscillator configuration. The amplifier is an emitter follower. The crystal is driven from the emitter and is coupled to the high impedance base through a capacitive tap network. Operation at the desired overtone frequency is ensured by the parallel resonant circuit formed by the variable inductor and the tap capacitors and parasitic capacitances of the on-chip transistor and PC board. The variable inductor specified in the schematic could be replaced with a high tolerance, high Q ceramic or air wound surface mount component if the other components have tight enough tolerances. A variable inductor provides an adjustment for gain and frequency of the resonant tank ensuring lock up and start-up of the crystal oscillator. The overtone crystal is chosen with ESR of typically 80 and 120 maximum; if the resistive loss in the crystal is too high the performance of oscillator may be impacted by lower gain margins. Figure 16. MC13150FTB Overtone Oscillator fRF = 83.16 MHz; fLO = 83.616 MHz 5th Overtone Crystal Oscillator (4) 0.135 H MC13150 + 1.0 33 Mixer 28 1.0 H 39 p 39 p 29 (3) 27 k 5th OT XTAL VEE 10 n 31 VCC MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13150 3.2-131 NOT RECOMMENDED FOR NEW DESIGNS MC13150 Typical Performance Over Temperature Figures 19-26 show the device performance over temperature. Figure 17. Signal Levels versus RF Input Signal Level 10 0 IF Output -10 -20 Limiter Input -30 RF Input at Transformer Input Mixer Output Mixer Input -40 IF Input -50 fRF = 50 MHz fLO = 50.455 MHz; LO Level = -10 dBm See Figure 15 -60 -70 -80 -70 -60 -50 -40 -30 -20 -10 0 RF INPUT SIGNAL LEVEL (dBm) MC13150 3.2-132 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS application circuit (Figure 15), the input 1.0 dB compression point is -10 dBm and the input third order intercept (IP3) performance of the system is approximately 0 dBm (see Figure 18). Receiver Design Considerations The curves of signal levels at various portions of the application receiver with respect to RF input level are shown in Figure 17. This information helps determine the network topology and gain blocks required ahead of the MC13150 to achieve the desired sensitivity and dynamic range of the receiver system. The PCB is laid out to accommodate a low noise preamp followed by the 83.16 MHz SAW filter. In the POWER (dBm) NOT RECOMMENDED FOR NEW DESIGNS MC13150 MC13150 Figure 18. 1.0 dB Compression Point and Input Third Order Intercept Point versus Input Power 0 IP3 = -0.5 dBm -20 -40 -80 -60 -40 -20 0 20 RF INPUT POWER (dBm) TYPICAL PERFORMANCE OVER TEMPERATURE Figure 19. Supply Current, IVEE1 versus Signal Input Level Figure 20. Supply Current, IVEE2 versus Ambient Temperature 5.0 4.0 3.5 VCC = 3.0 Vdc fc = 50 MHz fdev = 4.0 kHz IVEE2 , SUPPLY CURRENT (mA) 4.5 0.35 3.0 2.5 TA = 85C 2.0 1.5 1.0 0.5 0 -120 TA = 25C VCC = 3.0 Vdc 0.3 0.25 TA = -40C 0.2 -105 -90 -75 -60 -45 -30 -15 0 SIGNAL INPUT LEVEL (dBm) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA -40 -20 0 20 40 60 80 TA, AMBIENT TEMPERATURE (C) MC13150 3.2-133 NOT RECOMMENDED FOR NEW DESIGNS MIXER IF OUTPUT LEVEL (dBm) 1.0 dB Compression Point = -11 dBm VCC = 3.0 Vdc fRF1 = 50 MHz fRF2 = 50.01 MHz fLO = 50.455 MHz PLO = -10 dBm See Figure 15 -60 IVEE1, SUPPLY CURRENT (mA) NOT RECOMMENDED FOR NEW DESIGNS 20 MC13150 TYPICAL PERFORMANCE OVER TEMPERATURE Figure 21. Total Supply Current versus Ambient Temperature Figure 22. Minimum Supply Voltage versus Ambient Temperature VCC = 3.0 Vdc 1.7 1.65 1.6 1.55 1.5 1.45 2.0 1.5 1.0 -40 -20 0 20 40 60 80 -40 -20 0 20 40 60 80 TA, AMBIENT TEMPERATURE (C) TA, AMBIENT TEMPERATURE (C) Figure 23. RSSI Current versus Ambient Temperature and Signal Level Figure 24. Recovered Audio versus Ambient Temperature 0.7 60 Vin = 40 0 dBm -20 dBm 30 -40 dBm 20 -60 dBm -80 dBm -100 dBm 10 RECOVERED AUDIO (Vpp ) VCC = 3.0 Vdc fRF = 50 MHz 50 RSSI CURRENT ( A) 2.5 -120 dBm 0 -40 -20 0 20 40 60 80 0.65 0.6 0.55 VCC = 3.0 Vdc RF In = -50 dBm fc = 50 MHz fLO = 50.455 MHz fdev = 4.0 kHz 0.5 0.45 0.4 100 -40 -20 0 20 40 60 80 TA, AMBIENT TEMPERATURE (C) TA, AMBIENT TEMPERATURE (C) Figure 25. Demod DC Output Voltage versus Ambient Temperature Figure 26. LO Current versus Ambient Temperature 100 100 1.7 1.5 1.4 1.3 1.2 1.1 VCC = 3.0 Vdc RF In = -50 dBm fc = 50 MHz fLO = 50.455 MHz fdev = 4.0 kHz 90 LO CURRENT ( A) VCC = 3.0 Vdc RF In = -50 dBm fc = 50 MHz fLO = 50.455 MHz fdev = 4.0 kHz 1.6 80 70 60 1.0 0.9 -40 50 -20 0 20 40 60 TA, AMBIENT TEMPERATURE (C) MC13150 3.2-134 80 -40 -20 0 20 40 60 80 TA, AMBIENT TEMPERATURE (C) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS 1.75 MINIMUM SUPPLY VOLTAGE (Vdc) TOTAL SUPPLY CURRENT (mA) 3.0 1.4 DEMOD DC OUTPUT VOLTAGE (Vdc) NOT RECOMMENDED FOR NEW DESIGNS 1.8 MC13150 NOT RECOMMENDED FOR NEW DESIGNS 100 n 10 n 50 Semi-Rigid Coax 39 p 33 39 p 27 k 82 k 1n 11 p 180 n 150 k MC13150FTB 150 k 100 n 100 n 1n 1n 1 1n 150 k 100 n 560 k 1n 12 k + 100 n 10 NOT RECOMMENDED FOR NEW DESIGNS Figure 27. Component Placement View - Circuit Side GND VCC MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13150 3.2-135 MC13150 Figure 28. Component Placement View - Ground Side BW_adj F_adj DET_out GND 455 kHz Ceramic Filter 455 kHz Ceramic Filter RSSI AFT_adj 455 kHz Ceramic Filter 455 kHz Ceramic Filter 1 H 83.616 MHz ENABLE Xtal 135 nH LO Tuning SMA LO IN RF1 IN RF2 IN 3.8 MC13150 3.2-136 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS VCC MC13150 GND NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS Figure 29. PCB Circuit Side View VCC MC13150 3.8 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13150 3.2-137 MC13150 Figure 30. PCB Ground Side View BW_adj F_adj DET_out GND 455 kHz Ceramic Filter RSSI AFT_adj 455 kHz Ceramic Filter ENABLE Xtal LO Tuning LO IN RF1 IN RF2 IN 3.8 MC13150 3.2-138 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS VCC Wideband FM IF The MC13155 is a complete wideband FM detector designed for satellite TV and other wideband data and analog FM applications. This device may be cascaded for higher IF gain and extended Receive Signal Strength Indicator (RSSI) range. * 12 MHz Video/Baseband Demodulator * * * * * WIDEBAND FM IF Ideal for Wideband Data and Analog FM Systems Limiter Output for Cascade Operation SEMICONDUCTOR TECHNICAL DATA Low Drain Current: 7.0 mA Low Supply Voltage: 3.0 to 6.0 V Operates to 300 MHz MAXIMUM RATINGS 16 Rating Pin Symbol Value Unit Power Supply Voltage 11, 14 VEE (max) 6.5 Vdc Input Voltage 1, 16 Vin 1.0 Vrms Junction Temperature - TJ +150 C Storage Temperature Range - Tstg - 65 to +150 C NOTE: 1 D SUFFIX PLASTIC PACKAGE CASE 751B (SO-16) Devices should not be operated at or outside these values. The "Recommended Operating Conditions" provide for actual device operation. PIN CONNECTIONS Figure 1. Representative Block Diagram Buffered RSSI Decouple Output 15 13 RSSI Output 12 Limiter Output 10 16 9 Input 1 Three Stage Amplifier Quad Coil Detector Input Input 1 16 Input Decouple 2 15 Decouple VCC1 3 14 VEE1 Output 4 13 RSSI Buffer Output 5 12 RSSI VCC2 6 11 VEE2 Limiter Out 7 10 Limiter Out Quad Coil 8 9 Quad Coil 8 2 Decouple 4 Balanced Outputs 5 (Top View) 7 Limiter Output NOTE: This device requires careful layout and decoupling to ensure stable operation. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ORDERING INFORMATION Device Operating Temperature Range Package MC13155D TA = - 40 to +85C SO-16 MC13155 3.2-139 NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS MC13155 MC13155 NOT RECOMMENDED FOR NEW DESIGNS Rating Pin Symbol Value Unit Power Supply Voltage (TA= 25C) - 40C TA 85C 11, 14 3, 6 VEE VCC - 3.0 to - 6.0 Grounded Vdc Maximum Input Frequency 1, 16 fin 300 MHz - TJ - 40 to + 85 C Ambient Temperature Range DC ELECTRICAL CHARACTERISTICS (TA = 25C, no input signal.) Characteristic Drain Current (VEE = - 5.0 Vdc) (VEE = - 5.0 Vdc) Drain Current Total (see Figure 3) (VEE = - 5.0 Vdc) (VEE = - 6.0 Vdc) (VEE = - 3.0 Vdc) Pin Symbol Min Typ Max Unit 11 14 14 I11 I14 I14 2.0 3.0 3.0 2.8 4.3 4.3 4.0 6.0 6.0 mA 11, 14 ITotal 5.0 5.0 5.0 4.7 7.1 7.5 7.5 6.6 10 10.5 10.5 9.5 mA AC ELECTRICAL CHARACTERISTICS (TA = 25C, fIF = 70 MHz, VEE = - 5.0 Vdc Figure 2, unless otherwise noted.) Pin Min Typ Max Unit Input for - 3 dB Limiting Sensitivity 1, 16 - 1.0 2.0 mVrms Differential Detector Output Voltage (Vin = 10 mVrms) (fdev = 3.0 MHz) (VEE = - 6.0 Vdc) (VEE = - 5.0 Vdc) (VEE = - 3.0 Vdc) 4, 5 470 450 380 590 570 500 700 680 620 Detector DC Offset Voltage 4, 5 - 250 - 250 mVdc RSSI Slope 13 1.4 2.1 2.8 A/dB RSSI Dynamic Range 13 31 35 39 dB RSSI Output (Vin = 100 Vrms) (Vin = 1.0 mVrms) (Vin = 10 mVrms) (Vin = 100 mVrms) (Vin = 500 mVrms) 12 - - 16 - - 2.1 2.4 24 65 75 - - 36 - - RSSI Buffer Maximum Output Current (Vin = 10 mVrms) 13 - 2.3 - Differential Limiter Output (Vin = 1.0 mVrms) (Vin = 10 mVrms) 7, 10 100 - 140 180 - - Demodulator Video 3.0 dB Bandwidth 4, 5 - 12 - MHz Input Impedance (Figure 14) @ 70 MHz Rp (VEE = - 5.0 Vdc) @ 70 MHz Cp (C2=C15 = 100 p) 1, 16 - - 450 4.8 - - pF - 46 - dB Characteristic Differential IF Power Gain NOTE: mVp-p A mAdc mVrms 1, 7, 10, 16 Positive currents are out of the pins of the device. MC13155 3.2-140 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS RECOMMENDED OPERATING CONDITIONS MC13155 CIRCUIT DESCRIPTION indicator (RSSI) circuit which provides a current output linearly proportional to the IF input signal level for approximately 35 dB range of input level. Figure 2. Test Circuit 1.0n Vin 1.0n 49.9 Video Output 27 IN2 16 1 IN1 10n 2 DEC1 DEC2 15 3 VCC1 VEE1 14 4 DETO1 RSSI 13 Buffer 5 DETO2 RSSI 12 6 VCC2 VEE2 11 1.0n 100n 10 VEE + 1.0k Limiter 1 Output 100n 1.0n 1.0n QUAD2 9 8 QUAD1 10 VEE + Limiter 2 Output LIMO2 10 7 LIMO1 1.0n 330 VEE 1.0n 330 499 20p L1 L1 - Coilcraft part number 146-09J08S 260n APPLICATIONS INFORMATION Evaluation PC Board The evaluation PCB shown in Figures 19 and 20 is very versatile and is designed to cascade two ICs. The center section of the board provides an area for attaching all surface mount components to the circuit side and radial leaded components to the component ground side of the PCB (see Figures 17 and 18). Additionally, the peripheral area surrounding the RF core provides pads to add supporting and interface circuitry as a particular application dictates. This evaluation board will be discussed and referenced in this section. Limiting Amplifier Differential input and output ports interfacing the three stage limiting amplifier provide a differential power gain of typically 46 dB and useable frequency range of 300 MHz. The IF gain flatness may be controlled by decoupling of the internal feedback network at Pins 2 and 15. Scattering parameter (S-parameter) characterization of the IF as a two port linear amplifier is useful to implement maximum stable power gain, input matching, and stability over a desired bandpass response and to ensure stable operation outside the bandpass as well. The MC13155 is unconditionally stable over most of its useful operating frequency range; however, it can be made unconditionally stable over its entire operating range with the proper decoupling of Pins 2 and 15. Relatively small decoupling capacitors of about 100 pF have a significant effect on the wideband response and stability. This is shown in the scattering parameter tables where S-parameters are shown for various values of C2 and C15 and at VEE of - 3.0 and - 5.0 Vdc. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13155 3.2-141 NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS The MC13155 consists of a wideband three-stage limiting amplifier, a wideband quadrature detector which may be operated up to 200 MHz, and a received signal strength MC13155 TYPICAL PERFORMANCE AT TEMPERATURE (See Figure 2. Test Circuit) ITotal = I14 + I11 6.0 I14 4.0 I 11 and I 14 , TOTAL DRAIN CURRENT (mAdc) -10 dBm 60 - 20 dBm 40 2.0 - 30 dBm 20 - 40 dBm 1.0 2.0 3.0 4.0 5.0 6.0 7.0 0 10 8.0 100 1000 VEE, SUPPLY VOLTAGE (-Vdc) f, FREQUENCY (MHz) Figure 5. Total Drain Current versus Ambient Temperature and Supply Voltage Figure 6. Detector Drain Current and Limiter Drain Current versus Ambient Temperature 9.0 5.5 8.5 - 5.0 Vdc VEE = - 6.0 Vdc 8.0 7.5 7.0 - 3.0 Vdc 6.5 6.0 5.5 5.0 - 50 - 30 -10 10 30 50 70 90 I14 4.5 4.0 3.5 I11 3.0 2.5 - 30 -10 10 30 50 70 90 TA, AMBIENT TEMPERATURE (C) Figure 7. RSSI Output versus Ambient Temperature and Supply Voltage Figure 8. RSSI Output versus Input Signal Voltage (Vin at Temperature) 110 100 , RSSI OUTPUT ( A) VEE = - 6.0 Vdc 24.0 23.5 VEE = - 5.0 Vdc 22.5 I I VEE = - 3.0 Vdc 22.0 - 30 -10 10 30 50 70 TA, AMBIENT TEMPERATURE (C) 90 TA = + 85C 80 + 25C 60 - 40C 40 12 23.0 MC13155 3.2-142 f = 70 MHz VEE = - 5.0 Vdc TA, AMBIENT TEMPERATURE (C) 24.5 21.5 - 50 5.0 2.0 - 50 110 25.0 12 VEE = - 5.0Vdc 0 dBm 80 I 12 , RSSI OUTPUT ( A) 8.0 I 14 and I 11, DRAIN CURRENT (mAdc) I14 and I Total , DRAIN CURRENT (mAdc) TA = 25C 0.0 0.0 , RSSI OUTPUT ( A) NOT RECOMMENDED FOR NEW DESIGNS 100 10 110 20 0 0.1 1.0 10 100 1000 Vin, INPUT VOLTAGE (mVrms) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS Figure 4. RSSI Output versus Frequency and Input Signal Level Figure 3. Drain Current versus Supply Voltage VEE = - 6.0 Vdc 700 - 5.0 Vdc 650 - 3.0 Vdc 600 550 500 450 400 350 - 50 - 30 -10 10 30 50 70 90 110 220 f = 70 MHz VEE = - 5.0 Vdc 200 180 160 Vin = 1.0 mVrms 140 120 - 50 - 30 f dev = 6.0 MHz 5.0 MHz 4.0 MHz 800 3.0 MHz 600 2.0 MHz 400 1.0 MHz 200 2.0 2.5 3.0 3.5 4.0 4.5 10 30 50 70 90 5.0 5.5 Figure 11B. Differential Detector Output Voltage versus Q of Quadrature LC Tank DIFFERENTIAL DETECTOR OUTPUT (mVpp ) DIFFERENTIAL DETECTOR OUTPUT (mVpp ) 1600 0 1.5 -10 TA, AMBIENT TEMPERATURE (C) Figure 11A. Differential Detector Output Voltage versus Q of Quadrature LC Tank Vin = - 30 dBm 1400 VEE = - 5.0 Vdc fc = 70 MHz 1200 fmod = 1.0 MHz (Figure 16 no external capacitors 1000 between Pins 7, 8 and 9, 10) Vin = 10 mVrms 2400 Vin = - 30 dBm VEE = - 5.0 Vdc 2000 fc = 70 MHz fmod = 1.0 MHz 1600 (Figure 16 no external capacitors between Pins 7, 8 and 9, 10) f dev = 6.0 MHz 5.0 MHz 4.0 MHz 1200 3.0 MHz 800 2.0 MHz 400 1.0 MHz 0 1.5 6.0 2.0 2.5 Q OF QUADRATURE LC TANK 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Q OF QUADRATURE LC TANK Figure 11. Figure 12. RSSI Output Voltage versus IF Input 0 - 1.0 VEE = - 5.0 Vdc fc = 70 MHz (See Figure 16) Figure 13. - S+N, N versus IF Input 10 Capacitively coupled interstage: no attenuation S+N 0 15 dB Interstage Attenuator - 3.0 - 4.0 S+N, N (dB) -10 - 2.0 - 20 - 30 - 40 - 50 - 5.0 - 80 - 60 - 60 - 40 - 20 0 20 - 70 - 90 IF INPUT, (dBm) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA fc = 70 MHz fmod = 1.0 MHz fdev = 5.0 MHz VEE = - 5.0 Vdc - 70 N - 50 - 30 -10 10 IF INPUT (dBm) MC13155 3.2-143 NOT RECOMMENDED FOR NEW DESIGNS 750 DIFFERENTIAL LIMITER OUTPUT VOLTAGE (Pins 7, 10), (mVrms) DIFFERENTIAL DETECTOR OUTPUT VOLTAGE (Pins 4, 5), (mVpp ) Figure 10. Differential Limiter Output Voltage versus Ambient Temperature (Vin = 1 and 10 mVrms) Figure 9. Differential Detector Output Voltage versus Ambient Temperature and Supply Voltage TA, AMBIENT TEMPERATURE (C) RSSI OUTPUT VOLTAGE, (Vdc) NOT RECOMMENDED FOR NEW DESIGNS MC13155 In the S-parameters measurements, the IF is treated as a two-port linear class A amplifier. The IF amplifier is measured with a single-ended input and output configuration in which the Pins 16 and 7 are terminated in the series combination of a 47 resistor and a 10 nF capacitor to VCC ground (see Figure 14. S-Parameter Test Circuit). The S-parameters are in polar form as the magnitude (MAG) and angle (ANG). Also listed in the tables are the calculated values for the stability factor (K) and the Maximum Available Gain (MAG). These terms are related in the following equations: K = (1- IS11 I2 - I S22 I2 + I I2 ) / ( 2 I S12 S21 I ) where: I I = I S11 S22 - S12 S21 I. MAG = 10 log I S21 I / I S12 I + 10 log I K - ( K2 - 1)1/2 I where: K > 1. The necessary and sufficient conditions for unconditional stability are given as K > 1: B1 = 1 + I S11 I2 - I S22 I2 - I I2 > 0 Figure 14. S-Parameter Test Circuit IF Input SMA 1.0n 1.0n 1 IN1 47 IN2 16 C2 C15 2 DEC1 DEC2 15 3 VCC1 VEE1 14 4 DETO1 RSSI 13 Buffer 5 DETO2 RSSI 12 6 VCC2 VEE2 11 7 LIMO1 LIMO2 10 8 QUAD1 QUAD2 9 VEE 1.0n 100n 10 + SMA 1.0n 47 MC13155 3.2-144 1.0n IF Output MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS MC13155 MC13155 NOT RECOMMENDED FOR NEW DESIGNS Frequency Input S11 Forward S21 Rev S12 Output S22 K MAG MHz MAG ANG MAG ANG MAG ANG MAG ANG MAG dB 1.0 0.94 -13 8.2 143 0.001 7.0 0.87 - 22 2.2 32 2.0 0.78 - 23 23.5 109 0.001 - 40 0.64 - 31 4.2 33.5 5.0 0.48 1.0 39.2 51 0.001 - 97 0.34 -17 8.7 33.7 7.0 0.59 15 40.3 34 0.001 - 41 0.33 -13 10.6 34.6 10 0.75 17 40.9 19 0.001 - 82 0.41 -1.0 5.7 36.7 20 0.95 7.0 42.9 - 6.0 0.001 - 42 0.45 0 1.05 46.4 50 0.98 -10 42.2 - 48 0.001 - 9.0 0.52 - 3.0 0.29 - 70 0.95 -16 39.8 - 68 0.001 112 0.54 -16 1.05 46.4 100 0.93 - 23 44.2 - 93 0.001 80 0.53 - 22 0.76 - 150 0.91 - 34 39.5 -139 0.001 106 0.50 - 34 0.94 - 200 0.87 - 47 34.9 -179 0.002 77 0.42 - 44 0.97 - 500 0.89 -103 11.1 - 58 0.022 57 0.40 -117 0.75 - 700 0.61 -156 3.5 -164 0.03 0 0.52 179 2.6 13.7 900 0.56 162 1.2 92 0.048 - 44 0.47 112 4.7 4.5 1000 0.54 131 0.8 42 0.072 - 48 0.44 76 5.1 0.4 K MAG S-Parameters (VEE = - 5.0 Vdc, TA = 25C, C2 and C15 = 100 pF) Frequency Input S11 Forward S21 Rev S12 Output S22 MHz MAG ANG MAG ANG MAG ANG MAG ANG MAG dB 1.0 0.98 -15 11.7 174 0.001 -14 0.84 - 27 1.2 37.4 2.0 0.50 - 2.0 39.2 85.5 0.001 -108 0.62 - 35 6.0 35.5 5.0 0.87 8.0 39.9 19 0.001 100 0.47 - 9.0 4.2 39.2 7.0 0.90 5.0 40.4 9.0 0.001 - 40 0.45 - 8.0 3.1 40.3 10 0.92 3.0 41 1.0 0.001 - 40 0.44 - 5.0 2.4 41.8 20 0.92 - 2.0 42.4 -14 0.001 - 87 0.49 - 6.0 2.4 41.9 50 0.91 - 8.0 41.2 - 45 0.001 85 0.50 - 5.0 2.3 42 70 0.91 -11 39.1 - 63 0.001 76 0.52 - 4.0 2.2 41.6 100 0.91 -15 43.4 - 84 0.001 85 0.50 -11 1.3 43.6 150 0.90 - 22 38.2 -126 0.001 96 0.43 - 22 1.4 41.8 200 0.86 - 33 35.5 -160 0.002 78 0.43 - 21 1.3 39.4 500 0.80 - 66 8.3 - 9.0 0.012 75 0.57 - 63 1.7 23.5 700 0.62 - 96 2.9 - 95 0.013 50 0.49 -111 6.3 12.5 900 0.56 -120 1.0 -171 0.020 53 0.44 -150 13.3 2.8 1000 0.54 -136 0.69 154 0.034 65 0.44 -179 12.5 - 0.8 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13155 3.2-145 NOT RECOMMENDED FOR NEW DESIGNS S-Parameters (VEE = - 5.0 Vdc, TA = 25C, C2 and C15 = 0 pF) MC13155 NOT RECOMMENDED FOR NEW DESIGNS Frequency Input S11 Forward S21 Rev S12 Output S22 K MAG MHz MAG ANG MAG ANG MAG ANG MAG ANG MAG dB 1.0 0.74 4.0 53.6 110 0.001 101 0.97 - 35 0.58 - 2.0 0.90 3.0 70.8 55 0.001 60 0.68 - 34 1.4 45.6 5.0 0.91 0 87.1 21 0.001 -121 0.33 - 60 1.1 49 7.0 0.91 0 90.3 11 0.001 -18 0.25 - 67 1.2 48.4 10 0.91 - 2.0 92.4 2.0 0.001 33 0.14 - 67 1.5 47.5 20 0.91 - 4.0 95.5 -16 0.001 63 0.12 -15 1.3 48.2 50 0.90 - 8.0 89.7 - 50 0.001 - 43 0.24 26 1.8 46.5 70 0.90 -10 82.6 -70 0.001 92 0.33 21 1.4 47.4 100 0.91 -14 77.12 -93 0.001 23 0.42 -1.0 1.05 49 150 0.94 - 20 62.0 -122 0.001 96 0.42 - 22 0.54 - 200 0.95 - 33 56.9 -148 0.003 146 0.33 - 62 0.75 - 500 0.82 - 63 12.3 -12 0.007 79 0.44 - 67 1.8 26.9 700 0.66 - 98 3.8 -107 0.014 84 0.40 -115 4.8 14.6 900 0.56 -122 1.3 177 0.028 78 0.39 -166 8.0 4.7 1000 0.54 -139 0.87 141 0.048 76 0.41 165 7.4 0.96 K MAG S-Parameters (VEE = - 3.0 Vdc, TA = 25C, C2 and C15 = 0 pF) Frequency Input S11 Forward S21 Rev S12 Output S22 MHz MAG ANG MAG ANG MAG ANG MAG ANG MAG dB 1.0 0.89 -14 9.3 136 0.001 2.0 0.84 - 27 3.2 30.7 2.0 0.76 - 22 24.2 105 0.001 - 90 0.67 - 37 3.5 34.3 5.0 0.52 5.0 35.7 46 0.001 - 32 0.40 -13 10.6 33.3 7.0 0.59 12 38.1 34 0.001 - 41 0.40 -10 9.1 34.6 10 0.78 15 37.2 16 0.001 - 92 0.40 -1.0 5.7 36.3 20 0.95 5.0 38.2 - 9.0 0.001 47 0.51 - 4.0 0.94 - 50 0.96 -11 39.1 - 50 0.001 -103 0.48 - 6.0 1.4 43.7 70 0.93 -17 36.8 - 71 0.001 - 76 0.52 -13 2.2 41.4 100 0.91 - 25 34.7 - 99 0.001 -152 0.51 -19 3.0 39.0 150 0.86 - 37 33.8 -143 0.001 53 0.49 - 34 1.7 39.1 200 0.81 - 49 27.8 86 0.003 76 0.55 - 56 2.4 35.1 500 0.70 - 93 6.2 - 41 0.015 93 0.40 -110 2.4 19.5 700 0.62 -144 1.9 -133 0.049 56 0.40 -150 3.0 8.25 900 0.39 -176 0.72 125 0.11 -18 0.25 163 5.1 -1.9 1000 0.44 166 0.49 80 0.10 - 52 0.33 127 7.5 - 4.8 MC13155 3.2-146 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS S-Parameters (VEE = - 5.0 Vdc, TA = 25C, C2 and C15 = 680 pF) MC13155 NOT RECOMMENDED FOR NEW DESIGNS Frequency Input S11 Forward S21 Rev S12 Output S22 K MAG MHz MAG ANG MAG ANG MAG ANG MAG ANG MAG dB 1.0 0.97 -15 11.7 171 0.001 - 4.0 0.84 - 27 1.4 36.8 2.0 0.53 2.0 37.1 80 0.001 - 91 0.57 - 31 6.0 34.8 5.0 0.88 7.0 37.7 18 0.001 - 9.0 0.48 - 7.0 3.4 39.7 7.0 0.90 5.0 37.7 8.0 0.001 -11 0.49 - 7.0 2.3 41 10 0.92 2.0 38.3 1.0 0.001 - 59 0.51 - 9.0 2.0 41.8 20 0.92 - 2.0 39.6 -15 0.001 29 0.48 - 3.0 1.9 42.5 50 0.91 - 8.0 38.5 - 46 0.001 - 21 0.51 - 7.0 2.3 41.4 70 0.91 -11 36.1 - 64 0.001 49 0.50 - 8.0 2.3 40.8 100 0.91 -15 39.6 - 85 0.001 114 0.52 -13 1.7 37.8 150 0.89 - 22 34.4 -128 0.001 120 0.48 - 23 1.6 40.1 200 0.86 - 33 32 -163 0.002 86 0.40 - 26 1.7 37.8 500 0.78 - 64 7.6 -12 0.013 94 0.46 - 71 1.9 22.1 700 0.64 - 98 2.3 -102 0.027 58 0.42 -109 4.1 10.1 900 0.54 -122 0.78 179 0.040 38.6 0.35 -147 10.0 - 0.14 1000 0.53 -136 0.47 144 0.043 23 0.38 -171 15.4 - 4.52 K MAG S-Parameters (VEE = - 3.0 Vdc, TA = 25C, C2 and C15 = 680 pF) Frequency Input S11 Forward S21 Rev S12 Output S22 MHz MAG ANG MAG ANG MAG ANG MAG ANG MAG dB 1.0 0.81 3.0 37 101 0.001 -19 0.90 - 32 1.1 43.5 2.0 0.90 2.0 47.8 52.7 0.001 - 82 0.66 - 39 0.72 - 5.0 0.91 0 58.9 20 0.001 104 0.37 - 56 2.3 44 7.0 0.90 -1 60.3 11 0.001 - 76 0.26 - 55 2.04 44 10 0.91 - 2.0 61.8 3.0 0.001 105 0.18 - 52 2.2 43.9 20 0.91 - 4.0 63.8 - 15 0.001 59 0.11 -13 2.0 44.1 50 0.90 - 8.0 60.0 - 48 0.001 96 0.22 33 2.3 43.7 70 0.90 -11 56.5 - 67 0.001 113 0.29 15 2.3 43.2 100 0.91 -14 52.7 - 91 0.001 177 0.36 5.0 2.0 43 150 0.93 - 21 44.5 -126 0.001 155 0.35 -17 1.8 42.7 200 0.90 - 43 41.2 -162 0.003 144 0.17 - 31 1.6 34.1 500 0.79 - 65 7.3 -13 0.008 80 0.44 - 75 3.0 22 700 0.65 - 97 2.3 -107 0.016 86 0.38 -124 7.1 10.2 900 0.56 -122 0.80 174 0.031 73 0.38 -174 12 0.37 1000 0.55 -139 0.52 137 0.50 71 0.41 157 11.3 - 3.4 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13155 3.2-147 NOT RECOMMENDED FOR NEW DESIGNS S-Parameters (VEE = - 3.0 Vdc, TA = 25C, C2 and C15 = 100 pF) DC Biasing Considerations The DC biasing scheme utilizes two VCC connections (Pins 3 and 6) and two VEE connections (Pins 14 and 11). VEE1 (Pin 14) is connected internally to the IF and RSSI circuits' negative supply bus while VEE2 (Pin 11) is connected internally to the quadrature detector's negative bus. Under positive ground operation, this unique configuration offers the ability to bias the RSSI and IF separately from the quadrature detector. When two ICs are cascaded as shown in the 70 MHz application circuit and provided by the PCB (see Figures 17 and 18), the first MC13155 is used without biasing its quadrature detector, thereby saving approximately 3.0 mA. A total current of 7.0 mA is used to fully bias each IC, thus the total current in the application circuit is approximately 11 mA. Both VCC pins are biased by the same supply. VCC1 (Pin 3) is connected internally to the positive bus of the first half of the IF limiting amplifier, while VCC2 is internally connected to the positive bus of the RSSI, the quadrature detector circuit, and the second half of the IF limiting amplifier (see Figure 15). This distribution of the VCC enhances the stability of the IC. RSSI Circuitry The RSSI circuitry provides typically 35 dB of linear dynamic range and its output voltage swing is adjusted by selection of the resistor from Pin 12 to VEE. The RSSI slope is typically 2.1 A/dB ; thus, for a dynamic range of 35 dB, the current output is approximately 74 A. A 47 k resistor will yield an RSSI output voltage swing of 3.5 Vdc. The RSSI buffer output at Pin 13 is an emitter-follower and needs an external emitter resistor of 10 k to VEE. In a cascaded configuration (see circuit application in Figure 16), only one of the RSSI Buffer outputs (Pin 13) is used; the RSSI outputs (Pin 12 of each IC) are tied together and the one closest to the VEE supply trace is decoupled to VCC ground. The two pins are connected to VEE through a 47 k resistor. This resistor sources a RSSI current which is proportional to the signal level at the IF input; typically, 1.0 mVrms (- 47 dBm) is required to place the MC13155 into limiting. The measured RSSI output voltage response of the application circuit is shown in Figure 12. Since the RSSI current output is dependent upon the input signal level at the IF input, a careful accounting of filter losses, matching and other losses and gains must be made in the entire receiver system. In the block diagram of the application circuit shown below, an accounting of the signal levels at points throughout the system shows how the RSSI response in Figure 12 is justified. Block Diagram of 70 MHz Video Receiver Application Circuit Input Level: - 45 dBm 1.26 mVrms - 70 dBm 71 Vrms IF Input - 72 dBm 57 Vrms 16 Saw Filter 1:4 Transformer - 25 dB 2.0 dB (Insertion Loss) (Insertion Loss) - 47 dBm 1.0 mVrms Minimum Input to Acquire Limiting in MC13155 16 10 MC13155 MC13155 7 1 40 dB Gain Cascading Stages The limiting IF output is pinned-out differentially, cascading is easily achieved by AC coupling stage to stage. In the evaluation PCB, AC coupling is shown, however, interstage filtering may be desirable in some applications. In which case, the S-parameters provide a means to implement a low loss interstage match and better receiver sensitivity. Where a linear response of the RSSI output is desired when cascading the ICs, it is necessary to provide at least 10 dB of interstage loss. Figure 12 shows the RSSI response with and without interstage loss. A 15 dB resistive attenuator is an inexpensive way to linearize the RSSI response. This has its drawbacks since it is a wideband noise source that is dependent upon the source and load impedance and the amount of attenuation that it provides. A better, although more costly, solution would be a bandpass filter designed to the desired center frequency and bandpass response while carefully selecting the insertion loss. A network topology MC13155 3.2-148 - 32 dBm 57 Vrms 1 -15 dB (Attenuator) 40 dB Gain shown below may be used to provide a bandpass response with the desired insertion loss. Network Topology 1.0n 10 16 0.22 7 1 1.0n MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS MC13155 Quadrature Detector The quadrature detector is coupled to the IF with internal 2.0 pF capacitors between Pins 7 and 8 and Pins 9 and 10. For wideband data applications, such as FM video and satellite receivers, the drive to the detector can be increased with additional external capacitors between these pins, thus, the recovered video signal level output is increased for a given bandwidth (see Figure 11A and Figure 11B). The wideband performance of the detector is controlled by the loaded Q of the LC tank circuit. The following equation defines the components which set the detector circuit's bandwidth: Q = RT/XL (1) where: RT is the equivalent shunt resistance across the LC Tank and XL is the reactance of the quadrature inductor at the IF frequency (XL = 2fL). The inductor and capacitor are chosen to form a resonant LC Tank with the PCB and parasitic device capacitance at the desired IF center frequency as predicted by: (2) fc = (2 (LCp)) -1 where: L is the parallel tank inductor and Cp is the equivalent parallel capacitance of the parallel resonant tank circuit. The following is a design example for a wideband detector at 70 MHz and a loaded Q of 5. The loaded Q of the quadrature detector is chosen somewhat less than the Q of the IF bandpass. For an IF frequency of 70 MHz and an IF bandpass of 10.9 MHz, the IF bandpass Q is approximately 6.4. Example: Let the external Cext = 20 pF. (The minimum value here should be greater than 15 pF making it greater than the internal device and PCB parasitic capacitance, Cint 3.0 pF). Cp = Cint + Cext = 23 pF Rewrite Equation 2 and solve for L: L = (0.159)2 /(Cp fc2) L = 198 nH, thus, a standard value is chosen. L = 0.22 H (tunable shielded inductor). The value of the total damping resistor to obtain the required loaded Q of 5 can be calculated by rearranging Equation 1: RT = Q(2fL) RT = 5 (2)(70)(0.22) = 483.8 . The internal resistance, Rint between the quadrature tank Pins 8 and 9 is approximately 3200 and is considered in determining the external resistance, Rext which is calculated from: Rext = ((RT)(Rint))/ (Rint - RT) Rext = 570, thus, choose the standard value. Rext = 560 . SAW Filter In wideband video data applications, the IF occupied bandwidth may be several MHz wide. A good rule of thumb is to choose the IF frequency about 10 or more times greater than the IF occupied bandwidth. The IF bandpass filter is a SAW filter in video data applications where a very selective response is needed (i.e., very sharp bandpass response). The evaluation PCB is laid out to accommodate two SAW filter package types: 1) A five-leaded plastic SIP package. Recommended part numbers are Siemens X6950M which operates at 70 MHz; 10.4 MHz 3 dB passband, X6951M (X252.8) which operates at 70 MHz; 9.2 MHz 3 dB passband; and X6958M which operates at 70 MHz, 6.3 MHz 3 dB passband, and 2) A four-leaded TO-39 metal can package. Typical insertion loss in a wide bandpass SAW filter is 25 dB. The above SAW filters require source and load impedances of 50 to assure stable operation. On the PC board layout, space is provided to add a matching network, such as a 1:4 surface mount transformer between the SAW filter output and the input to the MC13155. A 1:4 transformer, made by Coilcraft and Mini Circuits, provides a suitable interface (see Figures 16, 17 and 18). In the circuit and layout, the SAW filter and the MC13155 are differentially configured with interconnect traces which are equal in length and symmetrical. This balanced feed enhances RF stability, phase linearity, and noise performance. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13155 3.2-149 NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS MC13155 NOT RECOMMENDED FOR NEW DESIGNS MC13155 3.2-150 Figure 15. Simplified Internal Circuit Schematic Decouple 15 2 13 12 VCC 1 LIM Out 3 10 Quad Coil 9 8 LIM Out VCC 2 7 6 RSSI RSSI Buffer 1.6k 5 10p Det Out 1.0p 8.0k 4 8.0k 1.0k 1.0k Bias Bias 16 1 14 11 Input Input VEE 1 VEE 2 NOT RECOMMENDED FOR NEW DESIGNS MC13155 2.0p Figure 15. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 2.0p 1.6k MC13155 Figure 16. 70 MHz Video Receiver Application Circuit 1:4 1 5 SAW Filter 2 3 4 220 SAW Filter is Siemens Part Number X6950M 1.0n 1.0n RSSI Output MC13155 IN2 16 1 IN1 100p 2 DEC1 DEC2 15 3 VCC1 VEE1 14 4 DETO1 RSSI 13 Buffer 5 DETO2 RSSI 12 6 VCC2 VEE2 11 7 LIMO1 LIMO2 10 10k 100p 10n 47k 100n 1.0n 10n QUAD2 8 QUAD1 9 + 10 VEE1 820 820 820 820 1.0n IN2 16 1 IN1 100p 1.0n MC13155 DEC2 15 2 DEC1 100p 3 VCC1 VEE1 14 4 DETO1 RSSI 13 Buffer 5 DETO2 RSSI 12 6 VCC2 VEE2 11 100n Detector Output 100n 33p 1.0k 33p 1.0k 10n 10n LIMO2 10 7 LIMO1 2.0p QUAD2 8 QUAD1 10 VEE2 + 2.0p 9 560 20p L L- Coilcraft part number 146-08J08S 0.22 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13155 3.2-151 NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS If Input MC13155 Figure 18. Component Placement (Ground Side) MC13155 3.2-152 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS Figure 17. Component Placement (Circuit Side) MC13155 NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS Figure 19. Circuit Side View 4.0 4.0 Figure 20. Ground Side View MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13155 3.2-153 Wideband FM IF System The MC13156 is a wideband FM IF subsystem targeted at high performance data and analog applications. Excellent high frequency performance is achieved at low cost using Motorola's MOSAIC 1.5 bipolar process. The MC13156 has an onboard grounded collector VCO transistor that may be used with a fundamental or overtone crystal in single channel operation or with a PLL in multichannel operation. The mixer is useful to 500 MHz and may be used in a balanced-differential, or single-ended configuration. The IF amplifier is split to accommodate two low cost cascaded filters. RSSI output is derived by summing the output of both IF sections. A precision data shaper has a hold function to preset the shaper for fast recovery of new data. Applications for the MC13156 include CT-2, wideband data links and other radio systems utilizing GMSK, FSK or FM modulation. * 2.0 to 6.0 Vdc Operation * * * * * * WIDEBAND FM IF SYSTEM FOR DIGITAL AND ANALOG APPLICATIONS SEMICONDUCTOR TECHNICAL DATA DW SUFFIX PLASTIC PACKAGE CASE 751E (SO-24L) 24 1 Typical Sensitivity at 200 MHz of 2.0 V for 12 dB SINAD RSSI Dynamic Range Typically 80 dB High Performance Data Shaper for Enhanced CT-2 Operation Internal 330 and 1.4 k Terminations for 10.7 MHz and 455 kHz Filters FB SUFFIX PLASTIC QFP PACKAGE CASE 873 32 1 Split IF for Improved Filtering and Extended RSSI Range 3rd Order Intercept (Input) of -25 dBm (Input Matched) PIN CONNECTIONS Function Simplified Block Diagram LO In LO Emit 24 23 VEE1 22 CAR Det RSSI 21 20 VEE2 19 DS Hold Data Out DS Gnd DS In 18 17 16 15 Mixer Quad Demod Coil 14 13 Data Slicer Bias 5.0 pF Bias LIM Amp IF Amp 1 2 3 4 5 RF In 1 RF In 2 Mix Out VCC1 IF In 6 7 IF IF DEC 1 DEC 2 8 9 10 IF Out VCC2 LIM In 11 SO-24L QFP RF Input 1 RF Input 2 Mixer Output VCC1 1 2 3 4 31 32 1 2 IF Amp Input IF Amp Decoupling 1 IF Amp Decoupling 2 VCC Connect (N/C Internal) 5 6 7 - 3 4 5 6 IF Amp Output VCC2 Limiter IF Input Limiter Decoupling 1 8 9 10 11 7 8 9 10 Limiter Decoupling 2 VCC Connect (N/C Internal) Quad Coil Demodulator Output 12 - 13 14 11 12, 13, 14 15 16 Data Slicer Input VCC Connect (N/C Internal) Data Slicer Ground Data Slicer Output 15 - 16 17 17 18 19 20 Data Slicer Hold VEE2 RSSI Output/Carrier Detect In Carrier Detect Output 18 19 20 21 21 22 23 24 VEE1 and Substrate LO Emitter LO Base VCC Connect (N/C Internal) 22 23 24 - 25 26 27 28, 29, 30 12 ORDERING INFORMATION LIM LIM DEC 1 DEC 2 Device NOTE: Pin Numbers shown for SOIC package only. Refer to Pin Assignments Table. This device contains 197 active transistors. MC13156 3.2-154 MC13156DW MC13156FB Operating Temperature Range TA = -40 to +85C Package SO-24L QFP MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS MC13156 MC13156 NOT RECOMMENDED FOR NEW DESIGNS Rating Pin Symbol Value Unit Power Supply Voltage 16, 19, 22 Vdc - VEE(max) TJ(max) -6.5 Junction Temperature 150 C Storage Temperature Range - Tstg -65 to +150 C NOTES: 1. Devices should not be operated at or outside these values. The "Recommended Operating Conditions" table provides for actual device operation. 2. ESD data available upon request. RECOMMENDED OPERATING CONDITIONS Rating Power Supply Voltage @ TA = 25C -40C TA +85C Input Frequency Ambient Temperature Range Input Signal Level Pin Symbol Value Unit 4, 9 16, 19, 22 VCC VEE 0 (Ground) -2.0 to -6.0 Vdc 1, 2 fin TA Vin 500 MHz -40 to +85 C 200 mVrms - 1, 2 DC ELECTRICAL CHARACTERISTICS (TA = 25C, VCC1 = VCC2 = 0, no input signal.) Pin Symbol Total Drain Current (See Figure 2) VEE = -2.0 Vdc VEE = -3.0 Vdc VEE = -5.0 Vdc VEE = -6.0 Vdc 19, 22 ITotal Drain Current, I22 (See Figure 3) VEE = -2.0 Vdc VEE = -3.0 Vdc VEE = -5.0 Vdc VEE = -6.0 Vdc 22 Drain Current, I19 (See Figure 3) VEE = -2.0 Vdc VEE = -3.0 Vdc VEE = -5.0 Vdc VEE = -6.0 Vdc 19 Characteristic Min Typ Max Unit - 3.0 - - 4.8 5.0 5.2 5.4 - 8.0 - - - - - - 3.0 3.1 3.3 3.4 - - - - - - - - 1.8 1.9 1.9 2.0 - - - - 1.0 1.1 1.2 Vdc - 1.7 - mA mA I22 mA I19 mA DATA SLICER (Input Voltage Referenced to VEE = -3.0 Vdc, no input signal; See Figure 15.) Input Threshold Voltage (High Vin) 15 Output Current (Low Vin) Data Slicer Enabled (No Hold) V15 > 1.1 Vdc V18 = 0 Vdc 17 V15 I17 AC ELECTRICAL CHARACTERISTICS (TA = 25C, VEE = -3.0 Vdc, fRF = 130 MHz, fLO = 140.7 MHz, Figure 1 test circuit, unless otherwise specified.) Characteristic Pin Symbol Min Typ Max Unit 1, 14 - - -100 - dBm Conversion Gain Pin = -37 dBm (Figure 4) 1, 3 - - 22 - dB Mixer Input Impedance Single-Ended (Table 1) 1, 2 Rp Cp - - 1.0 4.0 - - k pF Mixer Output Impedance 3 - - 330 - IF RSSI Slope (Figure 6) 20 - 0.2 0.4 0.6 A/dB IF Gain (Figure 5) 5, 8 - - 39 - dB Input Impedance 5 - - 1.4 - k Output Impedance 8 - - 290 - 12 dB SINAD Sensitivity (See Figures 17, 25) fin = 144.45 MHz; fmod = 1.0 kHz; fdev = 75 kHz MIXER IF AMPLIFIER SECTION MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13156 3.2-155 NOT RECOMMENDED FOR NEW DESIGNS MAXIMUM RATINGS MC13156 AC ELECTRICAL CHARACTERISTICS (continued) (TA = 25C, VEE = -3.0 Vdc, fRF = 130 MHz, fLO = 140.7 MHz, Figure 1 test circuit, unless otherwise specified.) Characteristic Pin Symbol Min Typ Max Unit 20 - 0.2 0.4 0.6 A/dB Limiter Gain - - - 55 - dB Input Impedance 10 - - 1.4 - k Output Current - Carrier Detect (High Vin) 21 - - 0 - A Output Current - Carrier Detect (Low Vin) 21 - - 3.0 - mA Input Threshold Voltage - Carrier Detect Input Voltage Referenced to VEE = -3.0 Vdc 20 - 0.9 1.2 1.4 Vdc Limiter RSSI Slope (Figure 7) CARRIER DETECT Figure 1. Test Circuit MC13156 1:4 (1) TR 1 RF Input 130MHz 50 Mixer 1 Local Oscillator Input 140.7MHz 200m Vrms 24 200 23 2 1.0 n Mixer Output 330 A 3 4 IF Input VEE VCC 22 100 n 20 VEE 19 IF Output + 1.0 n Data Slicer Hold Data Output A 1.0 n 9 10 SMA 100 n 17 Bias 8 VEE 1.0 18 Data Slicer Limiter Input A A 7 330 RSSI Output IF Amp 6 1.0 n 1.0 n Carrier Detect A 21 Bias 5 50 + 1.0 n 1.0 VCC VEE 16 1.0 n V LIM Amp 15 100 n 1.0 n 50 1.0 n 11 1.0 n 14 12 13 100 k 100 k 5.0 p 150 p (3) 1.0 H NOTES: 1. TR 1 Coilcraft 1:4 impedance transformer. 2. VCC is DC Ground. 3. 1.5 H variable shielded inductor: Toko Part # 292SNS-T1373 or Equivalent. MC13156 3.2-156 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS LIMITING AMPLIFIER SECTION MC13156 Figure 2. Total Drain Current versus Supply Voltage and Temperature Figure 3. Drain Currents versus Supply Voltage I 19 , I 22 DRAIN CURRENTS (mA) 55C 5.5 25C 5.0 -10C 4.5 -40C 4.0 2.0 3.0 4.0 5.0 6.0 3.6 3.2 2.8 2.4 I19 2.0 1.6 1.0 7.0 2.0 3.0 4.0 5.0 6.0 7.0 VEE, SUPPLY VOLTAGE (-Vdc) VEE, SUPPLY VOLTAGE (-Vdc) Figure 4. Mixer Gain versus Input Signal Level Figure 5. IF Amplifier Gain versus Input Signal Level and Ambient Temperature 25.0 40 22.5 38 20.0 TA = 25C 17.5 15.0 36 34 32 VEE = -5.0 Vdc f = 10.7 MHz 28 -80 -70 -60 -50 -40 -30 -20 85C 55C 25C -10C -40C 30 12.5 10.0 -90 I22 26 -65 -10 -60 -55 -50 -45 -40 -35 -30 Pin, IF INPUT SIGNAL LEVEL (dBm) Figure 6. IF Amplifier RSSI Output Current versus Input Signal Level and Ambient Temperature Figure 7. Limiter Amplifier RSSI Output Current versus Input Signal Level and Temperature 20.0 17.5 TA = 25 to 85C VEE = -5.0 Vdc f = 10.7 MHz -10C -40C 15.0 12.5 10.0 7.5 5.0 2.5 0 -50 -40 -30 -20 -10 0 10 LIMITER AMPLIFIER RSSI OUTPUT CURRENT ( A) Pin, RF INPUT SIGNAL LEVEL (dBm) 30 25 TA = 25 to 85C VEE = - 5.0 Vdc f = 10.7 MHz -10C -40C 20 15 10 5.0 Pin, IF INPUT SIGNAL LEVEL (dBm) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 0 -70 -60 -50 -40 -30 -20 -10 0 10 Pin, INPUT SIGNAL LEVEL (dBm) MC13156 3.2-157 NOT RECOMMENDED FOR NEW DESIGNS MIXER GAIN (dB) TA = 25C TA = 85C 6.0 IF AMPLIFIER GAIN (dB) TOTAL DRAIN CURRENT, I TOTAL (mA) 4.0 3.5 1.0 IF AMPLIFIER RSSI CURRENT ( A) NOT RECOMMENDED FOR NEW DESIGNS 6.5 NOT RECOMMENDED FOR NEW DESIGNS MC13156 3.2-158 Figure 8. MC13156DW Internal Circuit Schematic Local Oscillator VCC1 4 Mixer 1.0 k IF Amplifier 1.0 k IFdec1 32 k 6 32 k IFdec2 LO base 330 24 RFin1 1 2 RFin2 RSSI 7 1.4 k Mix IFin 5 3 Output Carrier Detect 290 8 IFout Carrier Detect Output 21 Figure 8. Oemitter 23 RSSI 20 Out VEE1 MC13156 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 400 22 13 Quad coil V CC2 Mdec1 Mdec2 LIM in 9 28 5.0 p 11 12 Demod 14 10 17 DS Output DS in 15 16 VEE2 16 k 19 Linear Amplifier 64 k Quadrature Detector DSGnd 64 k DSHold Data Slicer 64 k NOT RECOMMENDED FOR NEW DESIGNS 18 MC13156 General The MC13156 is a low power single conversion wideband FM receiver incorporating a split IF. This device is designated for use as the backend in digital FM systems such as CT-2 and wideband data links with data rates up to 500 kbaud. It contains a mixer, oscillator, signal strength meter drive, IF amplifier, limiting IF, quadrature detector and a data slicer with a hold function (refer to Figure 8, Simplified Internal Circuit Schematic). Current Regulation Temperature compensating voltage independent current regulators are used throughout. Mixer The mixer is a double-balanced four quadrant multiplier and is designed to work up to 500 MHz. It can be used in differential or in single-ended mode by connecting the other input to the positive supply rail. Figure 4 shows the mixer gain and saturated output response as a function of input signal drive. The circuit used to measure this is shown in Figure 1. The linear gain of the mixer is approximately 22 dB. Figure 9 shows the mixer gain versus the IF output frequency with the local oscillator of 150 MHz at 100 mVrms LO drive level. The RF frequency is swept. The sensitivity of the IF output of the mixer is shown in Figure 10 for an RF input drive of 10 mVrms at 140 MHz and IF at 10 MHz. The single-ended parallel equivalent input impedance of the mixer is Rp ~ 1.0 k and Cp ~ 4.0 pF (see Table 1 for details). The buffered output of the mixer is internally loaded resulting in an output impedance of 330 . Local Oscillator The on-chip transistor operates with crystal and LC resonant elements up to 220 MHz. Series resonant, overtone crystals are used to achieve excellent local oscillator stability. 3rd overtone crystals are used through about 65 to 70 MHz. Operation from 70 MHz up to 180 MHz is feasible using the on-chip transistor with a 5th or 7th overtone crystal. To enhance operation using an overtone crystal, the internal transistor's bias is increased by adding an external resistor from Pin 23 to VEE. -10 dBm of local oscillator drive is needed to adequately drive the mixer (Figure 10). The oscillator configurations specified above, and two others using an external transistor, are described in the application section: 1) A 133 MHz oscillator multiplier using a 3rd overtone 1) crystal, and 2) A 307.8 to 309.3 MHz manually tuned, varactor controlled 2) local oscillator. RSSI The Received Signal Strength Indicator (RSSI) output is a current proportional to the log of the received signal amplitude. The RSSI current output is derived by summing the currents from the IF and limiting amplifier stages. An external resistor at Pin 20 sets the voltage range or swing of the RSSI output voltage. Linearity of the RSSI is optimized by using external ceramic or crystal bandpass filters which have an insertion loss of 8.0 dB. The RSSI circuit is designed to provide 70+ dB of dynamic range with temperature compensation (see Figures 6 and 7 which show RSSI responses of the IF and Limiter amplifiers). Variation in the RSSI output current with supply voltage is small (see Figure 11). Carrier Detect When the meter current flowing through the meter load resistance reaches 1.2 Vdc above ground, the comparator flips, causing the carrier detect output to go high. Hysteresis can be accomplished by adding a very large resistor for positive feedback between the output and the input of the comparator. IF Amplifier The first IF amplifier section is composed of three differential stages with the second and third stages contributing to the RSSI. This section has internal dc feedback and external input decoupling for improved symmetry and stability. The total gain of the IF amplifier block is approximately 39 dB at 10.7 MHz. Figure 5 shows the gain and saturated output response of the IF amplifier over temperature, while Figure 12 shows the IF amplifier gain as a function of the IF frequency. The fixed internal input impedance is 1.4 k. It is designed for applications where a 455 kHz ceramic filter is used and no external output matching is necessary since the filter requires a 1.4 k source and load impedance. For 10.7 MHz ceramic filter applications, an external 430 resistor must be added in parallel to provide the equivalent load impedance of 330 that is required by the filter; however, no external matching is necessary at the input since the mixer output matches the 330 source impedance of the filter. For 455 kHz applications, an external 1.1 k resistor must be added in series with the mixer output to obtain the required matching impedance of 1.4 k of the filter input resistance. Overall RSSI linearity is dependent on having total midband attenuation of 12 dB (6.0 dB insertion loss plus 6.0 dB impedance matching loss) for the filter. The output of the IF amplifier is buffered and the impedance is 290 . Limiter The limiter section is similar to the IF amplifier section except that four stages are used with the last three contributing to the RSSI. The fixed internal input impedance is 1.4 k. The total gain of the limiting amplifier section is approximately 55 dB. This IF limiting amplifier section internally drives the quadrature detector section. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13156 3.2-159 NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS CIRCUIT DESCRIPTION MC13156 Figure 10. Mixer IF Output Level versus Local Oscillator Input Level Figure 9. Mixer Gain versus IF Frequency MIXER GAIN (dB) VEE = -3.0 Vdc Vin = 1.0 mVrms (-47 dBm) RO = 330 Rin = 50 BW(3.0 dB) = 21.7 MHz fIF = fLO - fRF fLO = 150 MHz VLO = 100 mVrms 10 5.0 0 -5.0 0.1 1.0 10 VEE = -3.0 Vdc TA = 25C -10 -15 -20 -25 -30 fRF = 140 MHz; fLO = 150 MHz RF Input Level = -27 dBm (10 mVrms) Rin = 50 ; RO = 330 -35 -40 -45 -50 100 -40 -30 fIF, IF FREQUENCY (MHz) Figure 11. RSSI Output Current versus Supply Voltage and RF Input Signal Level Vin = 50 IF AMPLIFIER GAIN (dB) 15 10 TA = 25C -20 dBm 20 0 60 30 25 -10 Figure 12. IF Amplifier Gain versus IF Frequency 40 35 -20 LO DRIVE (dBm) -40 dBm -60 dBm -80 dBm 10 -100 dBm 2.0 30 Vin = 100 V Rin = 50 RO = 330 BW(3.0 dB) = 26.8 MHz TA = 25C 20 10 5.0 0 1.0 40 3.0 4.0 5.0 6.0 0 0.1 7.0 1.0 10 100 f, FREQUENCY (MHz) VEE, SUPPLY VOLTAGE (-Vdc) V 14 , RECOVERED AUDIO OUTPUT (mVrms) Figure 13. Recovered Audio Output Voltage versus Supply Voltage 400 300 200 fmod = 1.0 kHz fdev = 75 kHz fRF = 140 MHz RF Input Level = 1.0 mVrms TA = 25C 100 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 VEE, SUPPLY VOLTAGE (-Vdc) MC13156 3.2-160 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS MIXER IF OUTPUT LEVEL (dBm) -5.0 15 I 20 , RSSI OUTPUT CURRENT ( A) NOT RECOMMENDED FOR NEW DESIGNS 20 Quadrature Detector The quadrature detector is a doubly balanced four quadrant multiplier with an internal 5.0 pF quadrature capacitor to couple the IF signal to the external parallel RLC resonant circuit that provides the 90 degree phase shift and drives the quadrature detector. A single pin (Pin 13) provides for the external LC parallel resonant network and the internal connection to the quadrature detector. The bandwidth of the detector allows for recovery of relatively high data rate modulation. The recovered signal is converted from differential to single ended through a push-pull NPN/PNP output stage. Variation in recovered audio output voltage with supply voltage is very small (see Figure 13). The output drive capability is approximately 9.0 A for a frequency deviation of 75 kHz and 1.0 kHz modulating frequency (see Application Circuit). Data Slicer The data slicer input (Pin 15) is self centering around 1.1 V with clamping occurring at 1.1 0.5 Vbe Vdc. It is designed to square up the data signal. Figure 14 shows a detailed schematic of the data slicer. The Voltage Regulator sets up 1.1 Vdc on the base of Q12, the Differential Input Amplifier. There is a potential of 1.0 Vbe on the base-collector of transistor diode Q11 and 2.0 Vbe on the base-collector of Q10. This sets up a 1.5 Vbe (~ 1.1 Vdc) on the node between the 36 k resistors which is connected to the base of Q12. The differential output of the data slicer Q12 and Q13 is converted to a single-ended output by the Driver Circuit. Additional circuitry, not shown in Figure 14, tends to keep the data slicer input centered at 1.1 Vdc as input signal levels vary. The Input Diode Clamp Circuit provides the clamping at 1.0 Vbe (0.75 Vdc) and 2.0 Vbe (1.45 Vdc). Transistor diodes Q7 and Q8 are on, thus, providing a 2.0 Vbe potential at the base of Q1. Also, the voltage regulator circuit provides a potential of 2.0 Vbe on the base of Q3 and 1.0 Vbe on the emitter of Q3 and Q2. When the data slicer input (Pin 15) is pulled up, Q1 turns off; Q2 turns on, thereby clamping the input at 2.0 Vbe. On the other hand, when Pin 15 is pulled down, Q1 turns on; Q2 turns off, thereby clamping the input at 1.0 Vbe. The recovered data signal from the quadrature detector is ac coupled to the data slicer via an input coupling capacitor. The size of this capacitor and the nature of the data signal determine how faithfully the data slicer shapes up the recovered signal. The time constant is short for large peak to peak voltage swings or when there is a change in dc level at the detector output. For small signal or for continuous bits of the same polarity which drift close to the threshold voltage, the time constant is longer. When centered there is no input current allowed, which is to say, that the input looks high in impedance. Another unique feature of the data slicer is that it responds to various logic levels applied to the Data Slicer Hold Control pin (Pin 18). Figure 15 illustrates how the input and output currents under "no hold" condition relate to the input voltage. Figure 16 shows how the input current and input voltage relate for both the "no hold" and "hold" condition. The hold control (Pin18) does three separate tasks: 1) With Pin 18 at 1.0 Vbe or greater, the output is shut off (sets high). Q19 turns on which shunts the base drive from Q20, thereby turning the output off. 2) With Pin 18 at 2.0 Vbe or greater, internal clamping diodes are open circuited and the comparator input is shut off and effectively open circuited. This is accomplished by turning off the current source to emitters of the input differential amplifier, thus, the input differential amplifier is shut off. 3) When the input is shut off, it allows the input capacitor to hold its charge during transmit to improve recovery at the beginning of the next receive period. When it is turned on, it allows for very fast charging of the input capacitor for quick recovery of new tuning or data average. The above features are very desirable in a TDD digital FM system. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13156 3.2-161 NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS MC13156 MC13156 Figure 14. Data Slicer Circuit 9 15 8.0 k Data Out 17 Q15 Q14 Q10 Q3 36 k Q20 Q1 Q12 Q5 Q13 36 k Q7 Q2 Q8 16 DS Gnd 32 k Q4 Q18 Q6 Q11 Q9 Q19 Q17 Q16 64 k 16 k VEE 16 k 64 k 64 k 19 Input Diode Clamp Circuit (Q1 to Q9) Voltage Regulator (Q10, Q11) Differential Input Amplifier (Q12, Q13) Figure 15. Data Slicer Input/Output Currents versus Input Voltage 0.1 0.5 -0.1 -0.5 -0.3 -0.5 0.6 Input Current (I15) 0.8 1.0 VEE = -3.0 Vdc V18 = 0 Vdc (No Hold) 1.2 1.4 V15, INPUT VOLTAGE (Vdc) MC13156 3.2-162 1.6 -1.5 VEE = -3.0 Vdc I 15 , INPUT CURRENT ( A) 1.5 Output Current (I17) 18 DS Hold 150 I 17 , OUTPUT CURRENT (mA) 0.3 Driver and Output Circuit (Q14, Q20) Figure 16. Data Slicer Input Current versus Input Voltage 2.5 0.5 I 15 , INPUT CURRENT (mA) NOT RECOMMENDED FOR NEW DESIGNS 8.0 k 100 50 0 -50 No Hold Hold -2.5 1.8 Hold V18 1O No Hold V18 = 0 Vdc -100 -1.0 -0.5 0 0.5 1.0 1.5 2.0 2.5 3.0 V15, INPUT VOLTAGE (Vdc) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS VCC DS In MC13156 + 1.0 (6) 0.146 MMBR5179 15 k 100 p MC13156 7.5 p 144.455 MHz RF Input 68 p 50 p Mixer 1 (1) 0.1 SMA (5) 0.82 24 5.6 k 470 43 p 133.755 MHz Osc/Tripler 23 2 10 n (4) 3rd O.T. XTAL 1.0 k 10 n 3 (2) 10.7 MHz Ceramic Filter 4 22 VEE VCC 21 Bias 100 k 5 10 n 47 k IF Amp 6 VEE 430 19 10 n Data Slicer Hold 18 7 Data Slicer 10 k Bias 8 VCC RSSI Output 20 10 n 10 n Carrier Detect 17 Data Output (2) 10.7 MHz Ceramic Filter 9 10 VCC VEE LIM Amp 16 100 n 15 180 p 10 n 100 k 11 14 100 k 430 10 n 13 12 5.0 p 150 p + 10 k (3) 1.5 VCC 1.0 NOTES: 1. 0.1 H Variable Shielded Inductor: Coilcraft part # M1283-A or equivalent. 2. 10.7 MHz Ceramic Filter: Toko part # SK107M5-A0-10X or Murata Erie part # SFE10.7MHY-A. 3. 1.5 H Variable Shielded Inductor: Toko part # 292SNS-T1373. 4. 3rd Overtone, Series Resonant, 25 PPM Crystal at 44.585 MHz. 5. 0.814 H Variable Shielded Inductor: Coilcraft part # 143-18J12S. 6. 0.146 H Variable Inductor: Coilcraft part # 146-04J08. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13156 3.2-163 NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS Figure 17. MC13156DW Application Circuit MC13156 Local OSC 43p 470 10n C 68p 5179 LO In IF In 10n 10k 10n 180 100 100n 430 100k 10n 150p 10k 10n 100p B 47k MC13156DW 10n 10n 430 10n E 100 15k 5.6k 1.0k +1 10n +1 VCC Figure 19. MC13156DW Ground Side Component Placement MC13156 3.2-164 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS Figure 18. MC13156DW Circuit Side Component Placement MC13156 Component Selection The evaluation PC board is designed to accommodate specific components, while also being versatile enough to use components from various manufacturers and coil types. Figures 18 and 19 show the placement for the components specified in the application circuit (Figure 17). The applications circuit schematic specifies particular components that were used to achieve the results shown in the typical curves and tables but equivalent components should give similar results. Input Matching Networks/Components The input matching circuit shown in the application circuit schematic is passive high pass network which offers effective image rejection when the local oscillator is below the RF input frequency. Silver mica capacitors are used for their high Q and tight tolerance. The PC board is not dedicated to any particular input matching network topology; space is provided for the designer to breadboard as desired. Alternate matching networks using 4:1 surface mount transformers or BALUNS provide satisfactory performance. The 12 dB SINAD sensitivity using the above matching networks is typically -100 dBm for fmod = 1.0 kHz and fdev = 75 kHz at fIN = 144.45 MHz and fOSC = 133.75 MHz (see Figure 25). It is desirable to use a SAW filter before the mixer to provide additional selectivity and adjacent channel rejection and improved sensitivity. The SAW filter should be designed to interface with the mixer input impedance of approximately 1.0 k. Table 1 displays the series equivalent single-ended mixer input impedance. Local Oscillators VHF Applications - The local oscillator circuit shown in the application schematic utilizes a third overtone crystal and an RF transistor. Selecting a transistor having good phase noise performance is important; a mandatory criteria is for the device to have good linearity of beta over several decades of collector current. In other words, if the low current beta is suppressed, it will not offer good 1/f noise performance. A third overtone series resonant crystal having at least 25 ppm tolerance over the operating temperature is recommended. The local oscillator is an impedance inversion third overtone Colpitts network and harmonic generator. In this circuit a 560 to 1.0 k resistor shunts the crystal to ensure that it operates in its overtone mode; thus, a blocking capacitor is needed to eliminate the dc path to ground. The resulting parallel LC network should "free-run" near the crystal frequency if a short to ground is placed across the crystal. To provide sufficient output loading at the collector, a high Q variable inductor is used that is tuned to self resonate at the 3rd harmonic of the overtone crystal frequency. The on-chip grounded collector transistor may be used for HF and VHF local oscillator with higher order overtone crystals. Figure 20 shows a 5th overtone oscillator at 93.3 MHz and Figure 21 shows a 7th overtone oscillator at 148.3 MHz. Both circuits use a Butler overtone oscillator configuration. The amplifier is an emitter follower. The crystal is driven from the emitter and is coupled to the high impedance base through a capacitive tap network. Operation at the desired overtone frequency is ensured by the parallel resonant circuit formed by the variable inductor and the tap capacitors and parasitic capacitances of the on-chip transistor and PC board. The variable inductor specified in the schematic could be replaced with a high tolerance, high Q ceramic or air wound surface mount component if the other components have good tolerances. A variable inductor provides an adjustment for gain and frequency of the resonant tank ensuring lock up and startup of the crystal oscillator. The overtone crystal is chosen with ESR of typically 80 and 120 maximum; if the resistive loss in the crystal is too high, the performance of the oscillator may be impacted by lower gain margins. Table 1. Mixer Input Impedance Data (Single-ended configuration, VCC = 3.0 Vdc, local oscillator drive = 100 mVrms) Frequency (MHz) Series Equivalent Complex Impedance (R + jX) () Parallel Resistance Rp () Parallel Capacitance Cp (pF) 90 190 - j380 950 4.7 100 160 - j360 970 4.4 110 130 - j340 1020 4.2 120 110 - j320 1040 4.2 130 97 - j300 1030 4.0 140 82 - j280 1040 4.0 150 71 - j270 1100 4.0 160 59 - j260 1200 3.9 170 52 - j240 1160 3.9 180 44 - j230 1250 3.8 190 38 - j220 1300 3.8 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13156 3.2-165 NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS APPLICATIONS INFORMATION A series LC network to ground (which is VCC) is comprised of the inductance of the base lead of the on-chip transistor and PC board traces and tap capacitors. Parasitic oscillations often occur in the 200 to 800 MHz range. A small resistor is placed in series with the base (Pin 24) to cancel the negative resistance associated with this undesired mode of oscillation. Since the base input impedance is so large a small resistor in the range of 27 to 68 has very little effect on the desired Butler mode of oscillation. The crystal parallel capacitance, Co, provides a feedback path that is low enough in reactance at frequencies of 5th overtone or higher to cause trouble. Co has little effect near resonance because of the low impedance of the crystal motional arm (Rm-Lm-Cm). As the tunable inductor which forms the resonant tank with the tap capacitors is tuned off the crystal resonant frequency, it may be difficult to tell if the oscillation is under crystal control. Frequency jumps may occur as the inductor is tuned. In order to eliminate this behavior an inductor (Lo) is placed in parallel with the crystal. Lo is chosen to resonant with the crystal parallel capacitance (Co) at the desired operation frequency. The inductor provides a feedback path at frequencies well below resonance; however, the parallel tank network of the tap capacitors and tunable inductor prevent oscillation at these frequencies. UHF Application Figure 22 shows a 318.5 to 320 MHz receiver which drives the mixer with an external varactor controlled (307.8 to 309.3 MHz) LC oscillator using an MPS901 (RF low power transistor in a TO-92 plastic package; also MMBR901 is available in a SOT-23 surface mount package). With the 50 k 10 turn potentiometer this oscillator is tunable over a range of approximately 1.5 MHz. The MMBV909L is a low voltage varactor suitable for UHF applications; it is a dual back-to-back varactor in a SOT-23 package. The input matching networ k us es a 1:4 impedanc e matching transformer (Recommended sources are Mini-Circuits and Coilcraft). Using the same IF ceramic filters and quadrature detector circuit as specified in the applications circuit in Figure 17, the 12 dB SINAD performance is -95 dBm for a fmod = 1.0 kHz sinusoidal waveform and fdev 40 kHz. This circuit is breadboarded using the evaluation PC board shown in Figures 32 and 33. The RF ground is VCC and path lengths are minimized. High quality surface mount components were used except where specified. The absolute values of the components used will vary with layout placement and component parasitics. RSSI Response Figure 26 shows the full RSSI response in the application circuit. The 10.7 MHz, 110 kHz wide bandpass ceramic filters (recommended sources are TOKO part # SK107M5-AO-10X or Murata Erie SFE10.7MHY-A) provide the correct bandpass insertion loss to linearize the curve between the limiter and IF portions of RSSI. Figure 25 shows that limiting occurs at an input of -100 dBm. As shown in Figure 26, the RSSI output linear from -100 dBm to -30 dBm. The RSSI rise and fall times for various RF input signal levels and R20 values are measured at Pin 20 without 10 nF filter capacitor. A 10 kHz square wave pulses the RF input signal on and off. Figure 27 shows that the rise and fall times are short enough to recover greater than 10 kHz ASK data; with a wider IF bandpass filters data rates up to 50 kHz may be achieved. The circuit used is the application circuit in Figure 17 with no RSSI output filter capacitor. Figure 20. MC13156DW Application Circuit fRF = 104 MHz; fLO = 93.30 MHz 5th Overtone Crystal Oscillator (4) 0.135 H 33 (2) 10 p 104 MHz SMA 3.0 p Mixer 120 p RF Input 27 p 1 24 2 23 (1) 0.1 1.0 H (3) 10 n 4.7 k 3 + 1.0 VEE 30 p 5th OT XTAL 22 10 n VCC To Filter NOTES: 1. 0.1 H Variable Shielded Inductor: Coilcraft part # M1283-A or equivalent. 2. Capacitors are Silver Mica. 3. 5th Overtone, Series Resonant, 25 PPM Crystal at 93.300 MHz. 4. 0.135 H Variable Shielded Inductor: Coilcraft part # 146-05J08S or equivalent. MC13156 3.2-166 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS MC13156 MC13156 Figure 21. MC13156DW Application Circuit (4) 76 nH + 1.0 33 (2) 5.0 p 159 MHz RF Input (1) 0.08 H SMA 27 p Mixer 50 p 1 24 2 23 3 22 0.22 H 47 p 10 n 4.7 k 470 VEE (3) 7th OT XTAL 10 n VCC To IF Filter NOTES: 1. 0.08 H Variable Shielded Inductor: Toko part # 292SNS-T1365Z or equivalent. 2. Capacitors are Silver Mica. 3. 7th Overtone, Series Resonant, 25 PPM Crystal at 148.300 MHz. 4. 76 nH Variable Shielded Inductor: Coilcraft part # 150-03J08S or equivalent. Figure 22. MC13156DW Varactor Controlled LC Oscillator 4.7 k MPS901 (1) 1:4 Transformer 6.8 p 47 k VVCO + 1.0 (6) 318.5 to 320 MHz RF Input (2) 50 k 1.0 M 0.1 Mixer 1 24 2 23 24 p 20 p (4) MMBV909L SMA 12 k 24 p (3) 18.5 nH 1.8 k 3 VEE 22 1.0 n 307.8-309.3 MHz LC Varactor Controlled Oscillator VCC = 3.3 Vdc (Reg) NOTES: 1. 1:4 Impedance Transformer: Mini-Circuits. 2. 50 k Potentiometer, 10 turns. 3. Spring Coil; Coilcraft A05T. 4. Dual Varactor in SOT-23 Package. 5. All other components are surface mount components. 6. Ferrite beads through loop of 24 AWG wire. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13156 3.2-167 NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS fRF = 159 MHz; fLO = 148.30 MHz 7th Overtone Crystal Oscillator The 12 dB SINAD performance is -109 dBm for a fmod = 1.0 kHz and a fdev = 4.0 kHz. The RSSI dynamic range is approximately 80 dB of linear range (see Figure 24). 45 MHz Narrowband Receiver The above application examples utilize a 10.7 MHz IF. In this section a narrowband receiver with a 455 kHz IF will be described. Figure 23 shows a full schematic of a 45 MHz receiver that uses a 3rd overtone crystal with the on-chip oscillator transistor. The oscillator configuration is similar to the one used in Figure 17; it is called an impedance inversion Colpitts. A 44.545 MHz 3rd overtone, series resonant crystal is used to achieve an IF frequency at 455 kHz. The ceramic IF filters selected are Murata Erie part # SFG455A3. 1.2 k chip resistors are used in series with the filters to achieve the terminating resistance of 1.4 k to the filter. The IF decoupling is very important; 0.1 F chip capacitors are used at Pins 6, 7, 11 and 12. The quadrature detector tank circuit uses a 455 kHz quadrature tank from Toko. Receiver Design Considerations The curves of signal levels at various portions of the application receiver with respect to RF input level are shown in Figure 28. This information helps determine the network topology and gain blocks required ahead of the MC13156 to achieve the desired sensitivity and dynamic range of the receiver system. In the application circuit the input third order intercept (IP3) performance of the system is approximately -25 dBm (see Figure 29). Figure 23. MC13156DW Application Circuit at 45 MHz 1.8 H + 1.0 (6) 33 p 45 Hz RF Input SMA (1) 0.33 H 10 n Mixer 1 24 56 p 10 n 470 k 23 2 39 p 1.2 k 3 (2) 455 kHz Ceramic Filter 4 VCC 10 k 10 n 21 Bias RSSI Output 10 n 47 k IF Amp 6 VEE 0.1 19 10 n Data Slicer Hold 18 7 Data Slicer 1.2 k 10 k 17 Bias 8 Carrier Detect 100 k 20 0.1 (4) 3rd OT XTAL 44.545 MHz 22 VEE 5 VCC (5) 0.416 H 180 p Data Output (2) 455 kHz Ceramic Filter 9 VCC VEE 100 n 15 10 0.1 16 LIM Amp 100 k 14 11 1.0 n 0.1 Audio To C-Message Filter and Amp. 100 k 13 12 5.0 p 27 k NOTES: 1. 0.33 H Variable Shielded Inductor: Coilcraft part # 7M3-331 or equivalent. 2. 455 kHz Ceramic Filter: Murata Erie part # SFG455A3. 3. 455 kHz Quadrature Tank: Toko part # 7MC8128Z. 4. 3rd Overtone, Series Resonant, 25 PPM Crystal at 44.540 MHz. 5. 0.416 H Variable Shielded Inductor: Coilcraft part # 143-10J12S. 6. 1.8 H Molded Inductor. MC13156 3.2-168 + 180 p (3) 680 H VCC = 2.0 to 5.0 Vdc 1.0 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS MC13156 MC13156 1.6 0 1.4 fRF = 45.00 MHz VCC = 2.0 Vdc 12 dB SINAD @ -109 dBm (0.8 Vrms) (See Figure 23) 1.2 1.0 0.8 S+N VCC = 5.0 Vdc fdev = 75 kHz fmod = 1.0 kHz fin = 144.45 MHz (See Figure 17) -10 -20 -30 0.6 -40 0.4 -120 -50 -110 -100 -100 -80 -60 -40 -20 0 20 0.8 VCC = 5.0 Vdc fc = 144.455 MHz fLO = 133.755 MHz Low Loss 10.7 MHz Ceramic Filter (See Figure 17) 0.6 0.4 35 t r , t f , RSSI RISE AND FALL TIMES ( s) RSSI OUTPUT VOLTAGE (Vdc) -60 -50 -40 -30 -20 Figure 27. RSSI Output Rise and Fall Times versus RF Input Signal Level 1.0 30 25 20 15 10 5.0 0 -100 -80 -60 -40 -20 0 0 SIGNAL INPUT LEVEL (dBm) Figure 28. Signal Levels versus RF Input Signal Level E E E E E E CC E CC E CC E E E E E E E C E C E -20 E E E E E CC E CC E CC E -40 tr tf tr tf tr tf @ 22 k @ 22 k @ 47 k @ 47 k @ 100 k @ 100 k E CC E E CC CC E E CC E E CC -60 -80 RF INPUT SIGNAL LEVEL (dBm) Figure 29. 1.0 dB Compression Pt. and Input Third Order Intercept Pt. versus Input Power 0 10 LO Level = -2.0 dBm (See Figure 17) MIXER IF OUTPUT LEVEL (dBm) IF Output Limiter Input -20 -30 -40 -50 -60 -70 -100 -70 Figure 26. RSSI Output Voltage versus Input Signal Level 1.2 -10 -80 RF INPUT SIGNAL (dBm) 1.4 0.2 -120 -90 SIGNAL INPUT LEVEL (dBm) -90 -80 -70 -60 -50 -40 -30 0 -10 -20 VCC = 5.0 Vdc fRF1 = 144.4 MHz fRF2 = 144.5 MHz fLO = 133.75 MHz PLO = -2.0 dBm (See Figure 17) 1.0 dB Comp. Pt. = -37 dBm IP3 = -25 dBm -30 -40 -50 -60 -70 -100 RF INPUT SIGNAL LEVEL (dBm) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA -80 -60 -40 -20 0 RF INPUT POWER (dBm) MC13156 3.2-169 NOT RECOMMENDED FOR NEW DESIGNS 10 S + N, N (dB) RSSI OUTPUT VOLTAGE (Vdc) Figure 25. S + N/N versus RF Input Signal Level 1.8 N POWER (dBm) NOT RECOMMENDED FOR NEW DESIGNS Figure 24. RSSI Output Voltage versus Input Signal Level MC13156 * Data rate = 100 kbps * Filter cutoff frequency set to 39% of the data rate or 39 kHz. * Filter type is a 5 pole equal-ripple with 0.5 phase error. * VCC = 4.0 Vdc * Frequency deviation = 32 kHz. Figure 30. Bit Error Rate versus RF Input Signal Level and IF Bandpass Filter 10 -1 10 -3 VCC = 4.0 Vdc Data Pattern = 2E09 Prbs NRZ Baseband Filter fc = 50 kHz fdev = 32 kHz IF Filter BW 110 kHz IF Filter BW 230 kHz 10 -5 10 -7 -90 -85 -80 -75 -70 RF INPUT SIGNAL LEVEL (dBm) Evaluation PC Board The evaluation PCB is very versatile and is intended to be used across the entire useful frequency range of this device. The center section of the board provides an area for attaching all SMT components to the circuit side and radial leaded components to the component ground side (see Figures 32 and 33). Additionally, the peripheral area surrounding the RF core provides pads to add supporting and interface circuitry as a particular application dictates. Figure 31. Bit Error Rate Test Setup Function Generator Bit Error Rate Tester RF Generator Wavetek Model No. 164 HP3780A or Equivalent HP8640B Clock Out Gen Clock Input Rcr Clock Input Rcr Data Input Generator Input Modulation Input RF Output 5 Pole Bandpass Filter Data Slicer Output Mixer Input MC13156 UUT MC13156 3.2-170 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS Description The test setup shown in Figure 31 is configured so that the function generator supplies a 100 kHz clock source to the bit error rate tester. This device generates and receives a repeating data pattern and drives a 5 pole baseband data filter. The filter effectively reduces harmonic content of the baseband data which is used to modulate the RF generator which is running at 144.45 MHz. Following processing of the signal by the receiver (MC13156), the recovered baseband sinewave (data) is AC coupled to the data slicer. The data slicer is essentially an auto-threshold comparator which tracks the zero crossing of the incoming sinewave and provides logic level data at its ouput. Data errors associated with the recovered data are collected by the bit error rate receiver and displayed. Bit error rate versus RF signal input level and IF filter bandwidth are shown in Figure 30. The bit error rate data was taken under the following test conditions: BER, BIT ERROR RATE NOT RECOMMENDED FOR NEW DESIGNS BER TESTING AND PERFORMANCE MC13156 Figure 32. Circuit Side View NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS MC13156DW 4.0 Figure 33. Ground Side View MC13156DW Quadrature Detector IF Filter 4.0 IF Filter Local Oscillator IF Input MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13156 3.2-171 Wideband FM IF Subsystem The MC13158 is a wideband IF subsystem that is designed for high performance data and analog applications. Excellent high frequency performance is achieved, with low cost, through the use of Motorola's MOSAIC 1.5 RF bipolar process. The MC13158 has an on-board grounded collector VCO transistor that may be used with a fundamental or overtone crystal in single channel operation or with a PLL in multi-channel operation. The mixer is useful to 500 MHz and may be used in a balanced differential or single ended configuration. The IF amplifier is split to accommodate two low cost cascaded filters. RSSI output is derived by summing the output of both IF sections. A precision data shaper has an Off function to shut the output off to save current. An enable control is provided to power down the IC for power management in battery operated applications. Applications include DECT, wideband wireless data links for personal and portable laptop computers and other battery operated radio systems which utilize GFSK, FSK or FM modulation. * Designed for DECT Applications * * * * * * * WIDEBAND FM IF SUBSYSTEM FOR DECT AND DIGITAL APPLICATIONS SEMICONDUCTOR TECHNICAL DATA 32 1 1.8 to 6.0 Vdc Operating Voltage FTB SUFFIX PLASTIC PACKAGE CASE 873 (Thin QFP) Low Power Consumption in Active and Standby Mode Greater than 600 kHz Detector Bandwidth Data Slicer with Special Off Function Enable Function for Power Down of Battery Operated Systems ORDERING INFORMATION RSSI Dynamic Range of 80 dB Minimum Device Operating Temperature Range Package MC13158FTB TA = - 40 to +85C TQFP-32 Low External Component Count Representative Block Diagram Mix Out Mix In2 Mix In1 N/C 32 31 30 Osc Osc Emit Base N/C VEE1 Enable 29 28 27 26 25 1 24 RSSI VCC1 2 23 RSSI Buf IF Amp IF In IF Dec1 3 22 DS Gnd MC13158 4 IF Dec2 5 IF Out 6 20 DS In2 19 DS "off" LIM Amp VCC2 7 Lim In 21 DS Out Data Slicer 18 DS In1 8 17 Det Out 9 10 5.0 p 12 13 11 Lim Lim N/C Dec1 Dec2 14 Bias 15 16 Lim Quad N/C Det VEE2 Out Gain This device contains 234 active transistors. MC13158 3.2-172 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS MC13158 MC13158 Rating Power Supply Voltage Pin Symbol Value Unit 16, 26 VS(max) 6.5 Vdc TJMAX +150 C Tstg - 65 to +150 C NOT RECOMMENDED FOR NEW DESIGNS Junction Temperature Storage Temperature Range NOTE: 1. Devices should not be operated at or outside these values. The "Recommended Operating Conditions" provide for actual device operation. RECOMMENDED OPERATING CONDITIONS (VCC = V2 = V7; VEE = V16 = V22 = V26; VS = VCC - VEE) Rating Pin Symbol Value Unit 2, 7 VS 2.0 to 6.0 Vdc Fin 10 to 500 MHz TA - 40 to + 85 C Vin 200 mVrms Power Supply Voltage TA = 25C - 40C TA 85C 16, 26 Input Frequency 31, 32 Ambient Temperature Range Input Signal Level 31, 32 DC ELECTRICAL CHARACTERISTICS (TA = 25C; VS = 3.0 Vdc; No Input Signal; See Figure 1.) Characteristic Total Drain Current Condition Pin Symbol Min Typ Max Unit VS = 2.0 Vdc VS = 3.0 Vdc VS = 6.0 Vdc See Figure 2 16, 26 ITOTAL 2.5 3.5 3.5 5.5 5.7 6.0 8.5 8.5 9.5 mA DATA SLICER (Input Voltage Referenced to VEE; VS = 3.0 Vdc; No Input Signal) Output Current; V18 LO; Data Slicer Enabled (DS "on") V19 = VEE V18 < V20 V20 = VS/2 See Figure 3 21 I21 2.0 5.9 - mA Output Current; V18 HI; Data Slicer Enabled (DS "on") V19 = VEE V18 > V20 V20 = VS/2 See Figure 4 21 I21 - 0.1 1.0 A Output Current; Data Slicer Disabled (DS "off") V19 = VCC V20 = VS/2 21 I21 - 0.1 1.0 A AC ELECTRICAL CHARACTERISTICS (TA = 25C; VS = 3.0 Vdc; fRF = 110.7 MHz; fLO = 100 MHz; See Figure 1.) Characteristic Condition Pin Symbol Min Typ Max Unit Vin = 1.0 mVrms See Figure 5 31, 32, 1 - - 22 - dB Noise Figure Input Matched 31, 32, 1 NF - 14 - dB Mixer Input Impedance Single-Ended See Figure 15 31, 32 Rp Cp - - 865 1.6 - - pF 1 - - 330 - MIXER Mixer Conversion Gain Mixer Output Impedance MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13158 3.2-173 NOT RECOMMENDED FOR NEW DESIGNS MAXIMUM RATINGS MC13158 AC ELECTRICAL CHARACTERISTICS (continued) (TA = 25C; VS = 3.0 Vdc; fRF = 110.7 MHz; fLO = 100 MHz; See Figure 1.) Characteristic Condition Pin Symbol Min Typ Max Unit IF RSSI Slope See Figure 8 23 - 0.15 0.3 0.4 A/dB IF Gain f = 10.7 MHz See Figure 7 3, 6 - - 36 - dB Input Impedance 3 - - 330 - Output Impedance 6 - - 330 - LIMITING AMPLIFIER SECTION Limiter RSSI Slope See Figure 9 23 - 0.15 0.3 0.4 A/dB Limiter Gain f = 10.7 MHz 8, 12 - - 70 - dB 8 - - 330 - Input Impedance Figure 1. Test Circuit LO Input RF Input 110.7 MHz 100 MHz 200 mVrms - 3.0 Vdc 1:4 50 - 2.3 Vdc A 200 32 31 Mix In1 Mix In2 Mixer Output 1 330 1.0 n 2 30 29 N/C 28 Osc Emit 27 Osc Base N/C Mix Out 26 VEE1 Enable RSSI RSSI Buf VCC1 DS Gnd 100 n IF Input 3 1.0 n 4 50 100 n 5 1.0 n IF Output 6 330 100 n 7 Limiter Input 8 50 100 n A 25 IF In DS Out MC13158 Data Slicer IF Dec1 DS In2 IF Dec2 DS "off" IF Out DS In1 Lim Amp VCC2 Det Out 5.0 p Lim Lim Lim N/C In Dec1 Dec2 9 10 11 Lim Det VEE2 N/C Gain Bias Out Quad 12 14 15 13 16 0 to - 3.0 Vdc 24 100 A - 3.0 Vdc 23 22 21 A 20 -1.5 Vdc 19 - 3.0 Vdc 18 0 to - 3.0 Vdc 17 51 k 1.0 n 100 n V 1.0 n 100 k A 1.0 H 200 pF MC13158 3.2-174 6.8 k - 3.0 Vdc MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS IF AMPLIFIER SECTION MC13158 Typical Performance Over Temperature (per Figure 1) 3.0 V 6.0 2.0 V 5.8 5.6 5.4 5.2 5.0 - 20 0 20 40 60 80 100 DATA SLICER OUTPUT CURRENT (mA) I TOTAL, TOTAL SUPPLY CURRENT (mA) VS = 6.0 V 6.2 4.8 8.5 7.0 6.5 6.0 5.5 - 20 0 NORMALIZED MIXER GAIN (dB) DATA SLICER OUTPUT CURRENT ( A) 60 80 100 120 0.2 V18 > V20 Data Slicer "On" V19 = VCC 0.10 V20 = VS/2 0.08 0.06 0.04 - 20 0 20 40 60 80 100 0.1 0 - 0.1 - 0.2 - 0.3 Vin = 1.0 mVrms VS = 3.0 Vdc fc = 110.7 MHz fLO = 100 MHz - 0.4 - 0.5 - 0.6 - 40 120 - 20 0 20 40 60 80 100 TA, AMBIENT TEMPERATURE (C) TA, AMBIENT TEMPERATURE (C) Figure 6. Mixer RSSI Output Current versus Ambient Temperature, Mixer Input Level Figure 7. Normalized IF Amp Gain versus Ambient Temperature 7.0 120 Vin = 10 mVrms 5.0 VS = 3.0 Vdc fc = 110.7 MHz fLO = 100 MHz Vin = 1.0 mVrms 3.0 - 20 0 20 40 60 80 100 120 NORMALIZED IF AMP GAIN (dB) 0.6 6.0 2.0 - 40 40 Figure 5. Normalized Mixer Gain versus Ambient Temperature 0.12 4.0 20 TA, AMBIENT TEMPERATURE (C) Figure 4. Data Slicer On Output Current versus Ambient Temperature 0.02 - 40 V18 < V20 7.5 5.0 120 Data Slicer "On" V19 = VEE V20 = VS/2 8.0 TA, AMBIENT TEMPERATURE (C) MIXER RSSI OUTPUT CURRENT ( A) NOT RECOMMENDED FOR NEW DESIGNS 6.4 0.4 VS = 3.0 Vdc f = 10.7 MHz Vin = 1.0 mVrms 0.2 0 - 0.2 - 0.4 - 0.6 - 0.8 - 40 TA, AMBIENT TEMPERATURE (C) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA - 20 0 20 40 60 80 100 120 TA, AMBIENT TEMPERATURE (C) MC13158 3.2-175 NOT RECOMMENDED FOR NEW DESIGNS Figure 3. Data Slicer On Output Current versus Ambient Temperature Figure 2. Total Supply Current versus Ambient Temperature, Supply Voltage MC13158 tTypical Performance Over Temperature (per Figure 1) 8.0 7.0 VS = 3.0 Vdc f = 10.7 MHz 6.0 5.0 4.0 Vin = 1.0 mVrms 3.0 2.0 - 40 - 20 0 20 40 60 80 100 120 8.0 Vin = 100 mVrms 6.0 4.0 2.0 Vin = 10 mVrms VS = 3.0 Vdc f = 10.7 MHz Vin = 1.0 mVrms 0 - 2.0 - 40 Vin = 100 Vrms - 20 0 20 40 60 80 100 TA, AMBIENT TEMPERATURE (C) TA, AMBIENT TEMPERATURE (C) Figure 10. Total RSSI Output Current versus Ambient Temperature (No Signal) Figure 11. Demodulator DC Voltage versus Ambient Temperature 0.60 VS = 3.0 Vdc No Input Signal 0.55 0.50 0.45 0.40 0.35 - 40 - 20 0 20 40 60 80 100 120 120 1.20 VS = 3.0 Vdc R17 = 51 k R15 = 100 k 1.15 1.10 1.05 1.00 0.95 0.90 - 40 - 20 0 TA, AMBIENT TEMPERATURE (C) 20 40 60 80 100 120 TA, AMBIENT TEMPERATURE (C) SYSTEM LEVEL AC ELECTRICAL CHARACTERISTICS (TA = 25C; VS = 3.0 Vdc; fRF = 112 MHz; fLO = 122.7 MHz) Characteristic 12 dB SINAD Sensitivity: Narrowband Application Without Preamp With Preamp Third Order Intercept Point 1.0 dB Comp. Point Condition Notes Symbol fRF = 112 MHz fmod = 1.0 kHz fdev = 125 kHz SINAD Curve Figure 25 Figure 26 1 - fRF1 = 112 MHz fRF2 = 112.1 MHz VS = 3.5 Vdc Figure 28 2 Typ Unit dBm -101 -113 IIP3 - 32 1.0 dB C.Pt. - 39 dBm NOTES: 1. Test Circuit & Test Set per Figure 24. 2. Test Circuit & Test Set per Figure 27. MC13158 3.2-176 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS Vin = 10 mVrms LIMITER AMP RSSI OUTPUT CURRENT ( A) 9.0 Figure 9. Limiter Amp RSSI Output Current versus Ambient Temperature, Input Signal Level DEMODULATOR OUTPUT DC VOLTAGE (Vdc) IF AMP RSSI OUTPUT CURRENT ( A) 10 TOTAL RSSI OUTPUT CURRENT ( A) NOT RECOMMENDED FOR NEW DESIGNS Figure 8. IF Amp RSSI Output Current versus Ambient Temperature, IF Input Level MC13158 General The MC13158 is a low power single conversion wideband FM receiver incorporating a split IF. This device is designated for use as the backend in digital FM systems such as Digital European Cordless Telephone (DECT) and wideband data links with data rates up to 2.0 Mbps. It contains a mixer, oscillator, Received Signal Strength Indicator (RSSI), IF amplifier, limiting IF, quadrature detector, power down or enable function, and a data slicer with output off function. Further details are covered in the Pin Function Description which shows the equivalent internal circuit and external circuit requirements. Current Regulation/Enable Temperature compensating voltage independent current regulators which are controlled by the enable pin (Pin 25) where "low" powers up and "high" powers down the entire circuit. Mixer The mixer is a double-balanced four quadrant multiplier and is designed to work up to 500 MHz. It can be used in differential or in single ended mode by connecting the other input to the positive supply rail. The linear gain of the mixer is approximately 22 dB at 100 mVrms LO drive level. The mixer gain and noise figure have been emphasized at the expense of intermodulation performance. RSSI measurements are added in the mixer to extend the range to higher signal levels. The single-ended parallel equivalent input impedance of the mixer is Rp ~ 1.0 k and Cp ~ 2.0 pF. The buffered output of the mixer is internally loaded resulting in an output impedance of 330 . Local Oscillator The on-chip transistor operates with crystal and LC resonant elements up to 220 MHz. Series resonant, overtone crystals are used to achieve excellent local oscillator stability. Third overtone crystals are used through about 65 to 70 MHz. Operation from 70 MHz up to 180 MHz is feasible using the on-chip transistor with a 5th or 7th overtone crystal. To enhance operation using an overtone crystal, the internal transistor bias is increased by adding an external resistor from Pin 29 to VEE; however, with an external resistor the oscillator stays on during power down. Typically, -10 dBm of local oscillator drive is needed to adequately drive the mixer. With an external oscillator source, the IC can be operated up to 500 MHz. RSSI The received signal strength indicator (RSSI) output is a current proportional to the log of the received signal amplitude. The RSSI current output is derived by summing the currents from the mixer, IF and limiting amplifier stages. An increase in RSSI dynamic range, particularly at higher input signal levels is achieved. The RSSI circuit is designed to provide typically 85 dB of dynamic range with temperature compensation. Linearity of the RSSI is optimized by using external ceramic bandpass filters which have an insertion loss of 4.0 dB and 330 source and load impedance. For higher data rates used in DECT and related applications, LC bandpass filtering is necessary to acquire the desired bandpass response; however, the RSSI linearity will require the same insertion loss. RSSI Buffer The RSSI output current creates a voltage across an external resistor. A unity voltage-gain amplifier is used to buffer this voltage. The output of this buffer has an active pull-up but no pull-down, so it can also be used as a peak detector. The negative slew rate is determined by external capacitance and resistance to the negative supply. IF Amplifier The first IF amplifier section is composed of three differential stages with the second and third stages contributing to the RSSI. This section has internal DC feedback and external input decoupling for improved symmetry and stability. The total gain of the IF amplifier block is approximately 40 dB at 10.7 MHz. The fixed internal input impedance is 330 . When using ceramic filters requiring source and loss impedances of 330 , no external matching is necessary. Overall RSSI linearity is dependent on having total midband attenuation of 10 dB (4.0 dB insertion loss plus 6.0 dB impedance matching loss) for the filter. The output of the IF amplifier is buffered and the impedance is 330 . Limiter The limiter section is similar to the IF amplifier section except that five differential stages are used. The fixed internal input impedance is 330 . The total gain of the limiting amplifier section is approximately 70 dB. This IF limiting amplifier section internally drives the quadrature detector section and it is also brought out on Pin 12. Quadrature Detector The quadrature detector is a doubly balanced four quadrant multiplier with an internal 5.0 pF quadrature capacitor between Pins 12 and 13. An external capacitor may be added between these pins to increase the IF signal to the external parallel RLC resonant circuit that provides the 90 degree phase shift and drives the quadrature detector. A single pin (Pin 13) provides for the external LC parallel resonant network and the internal connection to the quadrature detector. Internal low pass filter capacitors have been selected to control the bandwidth of the detector. The recovered signal is brought out by the inverting amplifier buffer. An external feedback resistor from the output (Pin 17) to the input of the inverting amplifier (Pin 15) controls the output amplitude; it is combined with another external resistor from the input to the negative supply (Pin 16) to set the output dc level. For a resistor ratio of 1, the DC level at the detector output is 2.0 VBE (see Figure 12). A small capacitor C17 across the first resistor (from Pin 17 to 15) can be used to reduce the bandwidth. Data Slicer The data slicer is a comparator that is designed to square up the data signal. Across the data slicer inputs (Pins 18 and 20) are back to back diodes. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13158 3.2-177 NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS CIRCUIT DESCRIPTION A unique feature of the data slicer is that the inverting switching stages in the comparator are supplied through the emitter pin of the output transistor (Pin 22 - DS Gnd) to VEE rather than internally to VEE. This is provided in order to reduce switching feedback to the front end. A control pin is provided to shut the data slicer output off (DS "off" - Pin 19). With DS "off" pin at VCC the data slicer output is shut off by shutting down the base drive to the output transistor. When a channel is being monitored to make an RSSI measurement, but not to collect data, the data output may be shut off to save current. The recovered data signal from the quadrature detector can be DC coupled to the data slicer DS IN1 (Pin 18). In the application circuit shown in Figure 1 it will be centered at 2.0 VBE and allowed to swing VBE. A capacitor is placed from DS IN2 (Pin 20) to VEE. The size of this capacitor and the nature of the data signal determine how faithfully the data slicer shapes up the recovered signal. The time constant is short for large peak to peak voltage swings or when there is a change in DC level at the detector output. For small signal or for continuous bits of the same polarity which drift close to the threshold voltage, the time constant is longer. NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS MC13158 AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA PIN FUNCTION DESCRIPTION Pin Symbol 1 Mix Out 2 Internal Equivalent Circuit Mixer Output The mixer output impedance is 330 ; it matches to 10.7 MHz ceramic filters with 330 input impedance. 2 VCC1 VCC1 1 Mix O Out 26 VEE1 3 IF In 2 VCC1 64 k 5 IF Dec2 4 IF Dec1 5 IF Dec2 6 IF Out 26 VEE1 330 3 IF In Description/External Circuit Requirements 64 k 4 IF Dec1 Supply Voltage (VCC1) This pin is the VCC pin for the Mixer, Local Oscillator and IF Am Oscillator, Amplifer lifer. The o operating erating supply voltage range is from 1.8 Vdc to 5.0 Vdc. In the PCB layout, the VCC trace must be kept as wide as possible to minimize inductive reactances along the trace; it is best to have it completely fill around the surface mount components and traces on the circuit side of the PCB. IF Input The input impedance at Pin 3 is 330 . It matches the 330 load impedance of a 10.7 MHz ceramic filter. Thus, no external matching is required. IF DEC1 & DEC2 IF decoupling pins. Decoupling capacitors should be placed directly at the pins to enhance stability. Two capacitors are decoupled to the RF ground VCC1; one is placed between DEC1 & DEC2. IF Output The output impedance is 330 ; it matches the 330 input resistance of a 10.7 MHz ceramic filter. 2 VCC1 5 IF Out 26 VEE1 MC13158 3.2-178 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13158 AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA Pin Symbol 7 VCC2 Internal Equivalent Circuit Description/External Circuit Requirements 7 VCC2 64 k 8 Lim In 9 Lim Dec1 D 1 10 Lim Dec2 11,14, 27 & 28 N/C 12 Lim Out 10 L Lim Dec2 16 VEE2 3300 64 k Limiter Input The limiter input impedance is 330 . 9 Lim Dec1 8 Lim In Limiter Output The output impedance is low. The limiter drives a quadrature detector circuit with in- phase and quadrature phase signals. Lim Out Quad 12 13 Quad Quadrature Detector Circuit The quadrature detector is a doubly balanced four-quadrant multiplier with an internal 5.0 pF capacitor between Pins 12 and 13. An external capacitor may be added to increase the IF signal to Pin 13. The quadrature detector pin is provided to connect the external RLC parallel resonant network which provides the 90 degree phase shift and drives the quadrature detector. 5.0 p 16 VEE2 15 17 16 Det Gain Det Out VEE2 Limiter Decoupling Decoupling capacitors are placed directly at these pins and to VCC (RF ground). Use the same procedure as in the IF decoupling. No Connects There is no internal connection to these pins; however it is recommended that these pins be connected externally to VCC (RF ground). 7 VCC2 13 Supply Voltage (VCC2) This pin is VCC supply for the Limiter, Quadrature Detector, data slicer and RSSI buffer circuits. In the application PC board this pin is tied to a common VCC trace with VCC1. 7 VCC2 15 D Det Gain 17 Det O Out 16 VEE2 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Detector Buffer Amplifier This is an inverting amplifier. An external feedback resistor from Pin 17 to 15, (the inverting input) controls the output amplitude; another resistor from Pin 15 to the negative supply (Pin 16) sets the DC output level. A 1:1 resistor ratio sets the output DC level at two VBE with respect to VEE. A small capacitor from Pin 17 to 15 can be used to set the bandwidth. Supply Ground (VEE2) In the PCB layout, the ground pins (also applies to Pin 26) should be connected directly to chassis ground. Decoupling capacitors to VCC should be placed directly at the ground pins. MC13158 3.2-179 NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS PIN FUNCTION DESCRIPTION (continued) MC13158 AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA Pin Symbol 19 DS "off" Internal Equivalent Circuit Description/External Circuit Requirements Data Slicer Off The data output may be shut off to save current by placing DS "off" (Pin 19) at VCC. DS Out 21 7 VCC2 21 DS Out 22 DS Gnd 22 DS Gnd 64 k 19 DS "off" 16 VEE2 18 DS In1 20 DS In2 7 VCC2 DS In1 18 DS In2 20 16 VEE2 23 RSSI Buf 24 RSSI VCC1 2 Data Slicer Ground All the inverting switching stages in the comparator are supplied through the emitter pin of the output transistor (Pin 22) to ground rather than internally to VEE in order to reduce switching feedback to the front end. Data Slicer Inputs The data slicer has differential inputs with back to back diodes across them. The recovered signal is DC coupled to DS IN1 (Pin 18) at nominally V18 with respect to VEE; thus, it will maintain V18 VBE at Pin 18. DS IN2 (Pin 20) is AC coupled to VEE. The choice of coupling capacitor is dependent on the nature of the data signal. For small signal or continuous bits of the same polarity, the response time is relatively large. On the other hand, for large peak to peak voltage swings or when the DC level at the detector output changes, the response time is short. See the discussion in the application section for external circuit design details. RSSI Buffer A unity gain amplifier is used to buffer the voltage at Pin 24 to 23.The output of the unity gain buffer (Pin 23) has an active pull up but no pull down. An external resistor is placed from Pin 23 to VEE to provide the pull down. VCC2 7 RSSI The RSSI output current creates a voltage drop across an external resistor from Pin 24 to VEE. The maximum RSSI current is 26 A; thus, the maximum RSSI voltage using a 100 k resistor is approximately 2.6 Vdc. Figure 22 shows the RSSI Output Voltage versus Input Signal Level in the application circuit. 24 RSSI 16 VEE2 MC13158 3.2-180 Data Slicer Output In the application example a 10 k pull-up resistor is connected to the collector of the output transistor at Pin 21. 23 RSSI Buf The negative slew rate is determined by an external capacitor and resistor to VEE (negative supply). The RSSI rise and fall times for various RF input signal levels and R24 values without the capacitor, C24 are displayed in Figure 24. This is the maximum response time of the RSSI. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS PIN FUNCTION DESCRIPTION (continued) MC13158 AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA AAAA AAAA AAAAAAAAAAAAAAA AAAAAAAAAAAAAA Pin Symbol 25 Enable Internal Equivalent Circuit Description/External Circuit Requirements 2 VCC1 Enable The IC regulators are enabled by placing this pin at VEE. 25 Enable 26 26 VEE1 VEE1 28 Osc Base 29 Osc Emitter 2 VCC1 7 VCC2 26 VEE1 16 VEE2 Oscillator Base This pin is connected to the base lead of the common collector transistor. Since there is no internal bias resistor to the base, VCC is applied through an external choke or coil. 2 VCC1 28 Osc Base Oscillator Emitter This pin is connected to the emitter lead; the emitter is connected internally to a current source of about 200 A. Additional emitter current may be obtained by connecting an external resistor to VEE; IE = V29/R29. 29 Osc Emitter 26 VEE1 31 32 Mix In1 VCC and VEE ESD Protection ESD protection diodes exist between the VCC and VEE pins. It is important to note that significant differences in potential (> 0.5 VBE) between the two VCC pins or between the VEE pins can cause these structures to start to conduct, thus compromising isolation between the supply busses. VCC1 & VCC2 should be maintained at the same DC potential, as should VEE1 & VEE2. Details of circuits using overtone crystal and LC varactor controlled oscillators are discussed in the application section. Mixer Inputs The parallel equivalent differential input impedance of the mixer is approximately 2.0 k in parallel with 1.0 pF. This equates to a single ended input impedance of 1.0 k in parallel with 2.0 pF. 2 VCC1 Mix In2 31 RF In2 RF In1 32 26 VEE1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA The application circuit utilizes a SAW filter having a differential output that requires a 2.0 k II 2.0 pF load. Therefore, little matching is required between the SAW filter and the mixer inputs. This and alternative circuits are discussed in more detail in the application section. MC13158 3.2-181 NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS PIN FUNCTION DESCRIPTION (continued) MC13158 Evaluation PC Board The evaluation PCB is very versatile and is intended to be used across the entire useful frequency range of this device. The center section of the board provides an area for attaching all SMT components to the circuit side and radial leaded components to the component ground side (see Figures 29 and 30). Additionally, the peripheral area surrounding the RF core provides pads to add supporting and interface circuitry as a particular application dictates. This evaluation board will be discussed and referenced in this section. MC13158 3.2-182 Component Selection The evaluation PC board is designed to accommodate specific components, while also being versatile enough to use components from various manufacturers and coil types. Figures 13 and 14 show the placement for the components specified in the application circuit (Figure 12). The application circuit schematic specifies particular components that were used to achieve the results shown in the typical curves and tables but alternate components should give similar results. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS APPLICATIONS INFORMATION MC13158 Figure 12. Application Circuit (6) 0.68 H SMA 33 p 27 p 1.0 (5) 95 nH (1) 10 n RF Input Saw Filter 112 MHz 33 32 (2) LCR Filter 31 30 28 N/C Mixer 100 n 29 4.7 k 27 N/C 26 (7) Enable 25 RSSI Out VEE1 Enable 24 1 680 p 1.0 n 150 2 330 nH VCC1 23 IF Amp 100 n 10 n MC13158 1.0 n 1.0 n 4 21 5 20 1.0 k 100 n C20 330 nH 6 7 (2) 19 Quad Detector 100 n 150 Lim Amp VCC2 DS In2 DS "off" DS In1 5.0 p 8 N/C 9 10 11 N/C 12 13 14 VEE2 Bias 15 16 17 C17 82 k R17 82 k R15 100 n 1.0 n DS Out 18 680 p 100 n VCC = 2.0 to 5.0 Vdc 100 k 22 3 100 n 10 k 1.0 n 39 p 100 p 2.2 k 1.5 H (3) LCR Quad Tank NOTES: 1. Saw Filter - Siemens part number Y6970M(5 pin SIP plastic package). 2. An LCR filter reduces the broadband noise in the IF; ceramic filters may be used for data rates under 500 kHz. 4.0 dB insertion loss filters optimize the linearity of RSSI. 3. The quadrature tank components are chosen to optimize linearity of the recovered signal while maintaining adequate recovered signal level. 1.5 H 7.0 mm variable shielded inductor: Toko part # 292SNS-T1373Z. The shunt resistor is approximately equal to Q(2fL), where Q 18 (3.0 dB BW = 600 kHz). 4. The local oscillator circuit utilizes a 122.7 MHz, 5th overtone, series resonant crystal specified with a frequency tolerance of 25 PPM, ESR of 120 max. The oscillator configuration is an emitter coupled butler. 5. The 95 NH (Nominal) inductor is a 7.0 mm variable shielded inductor: Coilcraft part # 150-04J08S or equivalent. 6. 0.68 H axial lead chokes (molded inductor ): Coilcraft part # 90-11. 7. To enable the IC, Pin 25 is taken to VEE. The external pull down resistor at Pin 29 could be linked to the enable function; otherwise if it is taken to VEE as shown, it will keep the oscillator biased at about 500 A depending on the VCC level. 8. The other resistors and capacitors are surface mount components. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13158 3.2-183 NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS (4) 122.7 MHz 5th OT Crystal MC13158 33p 680p 100n 10k 1n 100p 39p 1n + 1 MC13158 3.2-184 2.2k 680p 150 330nH 100n 100n 82k C20 MC13158FB C17 1n 100n 82k 1n 100n 150 100n 1.0k 10n 47k 1n 330nH 100n 33 27p 100n VCC MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS MC13158 100n NOT RECOMMENDED FOR NEW DESIGNS Figure 13. Circuit Side Component Placement MC13158 VEE VCC DS OFF QUAD COIL DS OPEN/ IN2 1.5 H 10.7 P CERAMIC FILTER 10.7 S CERAMIC FILTER 10.7 P CERAMIC FILTER 10.7 S CERAMIC FILTER DS OUT XTAL 122.7 MHz SAW FILTER 0.68 H LO 95 pH RF INPUT SMA MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA RSSI OUT MC13158 MC13158 3.2-185 NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS Figure 14. Ground Side Component Placement Input Matching/Components It is desirable to use a SAW filter before the mixer to provide additional selectivity and adjacent channel rejection. In a wideband system the primary sensitivity of the receiver backend may be achieved before the last mixer. Bandpass filtering in the limiting IF is costly and difficult to achieve for bandwidths greater than 280 kHz. The SAW filter should be selected to easily interface with the mixer differential input impedance of approximately 2.0 k in parallel with 1.0 pF. The PC board is dedicated to the Siemens SAW filter (part number Y6970M); the part is designed for DECT at 112 MHz 1st IF frequency. It is designed for a load impedance of 2.0 k in parallel with 2.0 pF; thus, no or little input matching is required between the SAW filter and the mixer. The Siemens SAW filter has an insertion loss of typically 10 dB and a 3.0 dB bandwidth of 1.0 MHz. The relatively high insertion loss significantly contributes to the system noise and a filter having lower insertion loss would be desirable. In existing low loss SAW filters, the required load impedance is 50 ; thus, interface matching between the filter and the mixer will be required. Figure 15 is a table of the single-ended mixer input impedance. A careful noise analysis is necessary to determine the secondary contribution to system noise. Figure 15. Mixer Input Impedance NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS MC13158 AAAAAAA AAAAA AAAAAAA AAAAAAA AAAAAA AAAAAAA AAAAAAA AAAAA AAAAAAA AAAAAAA AAAAAA AAAAAAA AAAAAAA AAAAA AAAAAAA AAAAAAA AAAAAA AAAAAAA AAAAAAA AAAAA AAAAAAA AAAAAAA AAAAAA AAAAAAA AAAAAAA AAAAA AAAAAAA AAAAAAA AAAAAA AAAAAAA AAAAAAA AAAAA AAAAAAA AAAAAAA AAAAAA AAAAAAA AAAAAAA AAAAA AAAAAAA AAAAAAA AAAAAA AAAAAAA AAAAAAA AAAAA AAAAAAA AAAAAAA AAAAAA AAAAAAA AAAAAAA AAAAA AAAAAAA AAAAAAA AAAAAA AAAAAAA AAAAAAA AAAAA AAAAAAA AAAAAAA AAAAAA AAAAAAA AAAAAAA AAAAA AAAAAAA AAAAAAA AAAAAA AAAAAAA AAAAAAA AAAAA AAAAAAA AAAAAAA AAAAAA AAAAAAA (Single-ended) f (MHz) Rs () Xs () Rp () Xp () Cp (pF) 50 930 - 350 1060 - 2820 1.1 100 480 - 430 865 - 966 1.6 150 270 - 400 860 - 580 1.8 200 170 - 320 770 - 410 1.9 250 130 - 270 690 - 330 1.85 300 110 - 250 680 - 300 1.8 400 71 -190 580 - 220 1.8 500 63 -140 370 -170 1.9 600 49 -110 300 -130 2.0 System Noise Considerations The system block diagram in Figure 16 shows the cascaded noise stages contributing to the system noise; it represents the application circuit in Figure 12 and a low noise preamp using a MRF941 transistor (see Figure 17). The preamp is designed for a conjugately matched input and output at 2.0 Vdc VCE and 3.0 mAdc Ic. S-parameters at 2.0 V, 3.0 mA and 100 MHz are: S11 = 0.86, -20 S21 = 9.0, 164 S12 = 0.02, 79 S22 = 0.96, -12 The bias network sets VCE at 2.0 V and Ic at 3.0 mA for VCC = 3.0 to 3.5 Vdc. The preamp operates with 18 dB gain and 2.7 dB noise figure. In the cascaded noise analysis the system noise equation is: Fsystem + F1 ) [(F2-1)G1] ) [(F3-1)][(G1)(G2)] + log-1[(NF in dB)10] and similarly G + log -1[(Gain in dB)10] F The noise figure and gain measured in dB are shown in the system block diagram. The mixer noise figure is typically 14 dB and the SAW filter adds typically 10 dB insertion loss. Addition of a low noise preamp having a 18 dB gain and 2.7 dB noise figure not only improves the system noise figure but it increases the reverse isolation from the local oscillator to the antenna input at the receiver. Calculating in terms of gain and noise factor yields the following: F1 F2 F3 + 1.86; G1 + 63.1 + 10; G2 + 0.1 + 25.12 Thus, substituting in the equation for system noise factor: where: F1 = the Noise Factor of the Preamp G1 = the Gain of the Preamp F2 = the Noise factor of the SAW Filter G2 = the Gain of the SAW Filter F3 = the Noise factor of the Mixer MC13158 3.2-186 Note: the proceeding terms are defined as linear relationships and are related to the log form for gain and noise figure by the following: Fsystem + 5.82; NFsystem + 7.7 dB MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13158 Figure 16. System Block Diagram for Noise Analysis fRF = 112 MHz Mixer f = 10.7 MHz IF 270 Noise Source SAWF G1 = 18 dB NF1 = 2.7 dB G2 = 10 dB NF2 = 10 dB 330 nH NF Meter 150 p 47 G3 = 18 dB NF3 = 14 dB Local Oscillator fLO = 122.7 MHz Figure 17. 112 MHz LNA 3.5 Vdc 100 n 510 15 k 100 p 680 nH MPS3906 1.0 k FB 8.2 k 1.0 k RF Input 100 nH 100 p 100 p RF Output MRF941 100 p 100 nH LOCAL OSCILLATORS VHF Applications The on-chip grounded collector transistor may be used for HF and VHF local oscillator with higher order overtone crystals. The local oscillator in the application circuit (Figure 12) shows a 5th overtone oscillator at 122.7 MHz. This circuit uses a Butler overtone oscillator configuration. The amplifier is an emitter follower. The crystal is driven from the emitter and is coupled to the high impedance base through a capacitive tap network. Operation at the desired overtone frequency is ensured by the parallel resonant circuit formed by the variable inductor and the tap capacitors and parasitic capacitances of the on-chip transistor and PC board. The variable inductor specified in the schematic could be replaced with a high tolerance, high Q ceramic or air wound surface mount component if the other components have tight enough tolerances. A variable inductor provides an adjustment for gain and frequency of the resonant tank ensuring lock up and start-up of the crystal oscillator. The overtone crystal is chosen with ESR of typically 80 and 120 maximum; if the resistive loss in the crystal is too high the performance of oscillator may be impacted by lower gain margins. A series LC network to ground (which is VCC) is comprised of the inductance of the base lead of the on-chip transistor and PC board traces and tap capacitors. Parasitic oscillations often occur in the 200 to 800 MHz range. A small resistor is placed in series with the base (Pin 28) to cancel the negative resistance associated with this undesired mode of oscillation. Since the base input impedance is so large a small resistor in the range of 27 to 68 has very little effect on the desired Butler mode of oscillation. The crystal parallel capacitance, Co, provides a feedback path that is low enough in reactance at frequencies of 5th overtones or higher to cause trouble. Co has little effect near resonance because of the low impedance of the crystal motional arm (Rm-Lm-Cm). As the tunable inductor which forms the resonant tank with the tap capacitors is tuned "off" the crystal resonant frequency it may be difficult to tell if the oscillation is under crystal control. Frequency jumps may occur as the inductor is tuned. In order to eliminate this behavior an inductor, Lo, is placed in parallel with the crystal. Lo is chosen to be resonant with the crystal parallel capacitance, Co, at the desired operation frequency. The inductor provides a feedback path at frequencies well below resonance; however, the parallel tank network of the tap capacitors and tunable inductor prevent oscillation at these frequencies. IF Filtering/Matching In wideband data systems the IF bandpass needed is greater than can be found in low cost ceramic filters operating at 10.7 MHz. It is necessary to bandpass limit with LC networks or series-parallel ceramic filter networks. Murata offers a series-parallel resonator pair (part number MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13158 3.2-187 NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS LNA KMFC545) with a 3.0 dB bandwidth of 325 kHz and a maximum insertion loss of 5.0 dB. The application PC board is laid out to accommodate this filter pair (a filter pair is used at both locations of the split IF). However, even using a series parallel ceramic filter network yields only a maximum bandpass of 650 kHz. In some applications a wider band IF bandpass is necessary. A simple LC network yields a bandpass wider than the SAW filter but it does reduce an appreciable amount of wideband IF noise. In the application circuit an LC network is specified using surface mount components. The parallel LC components are placed from the outputs of the mixer and IF amplifier to the VCC trace; internal 330 loads are connected from the mixer and IF amplifier outputs to DEC2 (Pin 5 and 10 respectively).This loads the outputs with the optimal load impedance but creates a low insertion loss filter. An external shunt resistor may be used to widen the bandpass and to acquire the 10 dB composite loss necessary to linearize the RSSI output. The equivalent circuit is shown in Figure 18. Figure 18. IF LCR Filter 680 p 2, 7 VCC 3, 8 DEC1 DEC2 4, 9 5, 10 The following equations satisfy the 12 dB loss (1:4 resistive ratio): ) + Requivalent ) 330) + 14 Solve for Requivalent: + + 4(Requivalent) Requivalent 3(Requivalent) 330 Requivalent 110 + ) 330 Substitute for Requivalent and solve for Rext: + 330(Rext) 110(Rext) Rext (330)(110) 220 Rext 165 + + W ) (330)(110) The IF is 10.7 MHz although any IF between 10 to 20 MHz could be used. The value of the coil is lowered from that used in the quadrature circuit because the unloaded Q must be maintained in a surface mount component. A standard value component having an unloaded Q = 100 at 10.7 MHz is 330 nH; therefore the capacitor is 669 pF. Standard values have been chosen for these components; + Rext 150 C 680 pF L 330 nH + + MC13158 3.2-188 where: XL = 2fL and Requivalent is 103 Thus, Q + 4.65 The total system loss is 20 log (103 433) + -12.5 dB Quadrature Detector The quadrature detector is coupled to the IF with an internal 5.0 pF capacitor between Pins 12 and 13. For wideband data applications, the drive to the detector can be increased with an additional external capacitor between these pins; thus, the recovered signal level output is increased for a given bandwidth The wideband performance of the detector is controlled by the loaded Q of the LC tank circuit. The following equation defines the components which set the detector circuit's bandwidth: fc Rin 330 VCC (Rext)(330) (Rext 330) Requivalent (Requivalent + RequivalentXL + RTXL [1] where RT is the equivalent shunt resistance across the LC Tank XL is the reactance of the quadrature inductor at the IF frequency (XL = 2fL). The inductor and capacitor are chosen to form a resonant LC tank with the PCB and parasitic device capacitance at the desired IF center frequency as predicted by 1, 6 330 nH Q Q Rout 330 150 Computation of the loaded Q of this LCR network is + [2p (LCp)12]-1 [2] where L is the parallel tank inductor Cp is the equivalent parallel capacitance of the parallel resonant tank circuit. The following is a design example for a wideband detector at 10.7 MHz and a loaded Q of 18. The loaded Q of the quadrature detector is chosen somewhat less than the Q of the IF bandpass. For an IF frequency of 10.7 MHz and an IF bandpass of 600 kHz, the IF bandpass Q is approximately 6.4. Example: Let the external Cext = 139 pF. (The minimum value here should be much greater than the internal device and PCB parasitic capacitance, Cint 3.0 pF). Thus, Cp = Cint + Cext = 142 pF. Rewrite equation (2) and solve for L: L = (0.159)2/(Cpfc2) L = 1.56 H; Thus, a standard value is choosen: L = 1.56 H (tunable shielded inductor) The value of the total damping resistor to obtain the required loaded Q of 18 can be calculated by rearranging equation (1): R T R T + Q(2pfL) + 18(2p)(10.7)(1.5) + 1815 W W MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS MC13158 Rext Rext Rext + ((RT)(Rint))(Rint - RT) + 2110; Thus, choose the standard value: + 2.2 kW It is important to set the DC level of the detector output at Pin 17 to center the peak to peak swing of the recovered signal. In the equivalent internal circuit shown in the Pin Function Description, the reference voltage at the positive terminal of the inverting op amp buffer amplifier is set at 1.0 VBE. The detector DC level, V17 is determined by the following equation: V 17 + [((R15R17) ) 1)(R15R17)] VBE Thus, for a 1:1 ratio of R15/R17, V17 = 2.0 VBE = 1.4 Vdc. Similarly for a 2:1, V17 = 1.5 VBE = 1.05 Vdc; and for 3:1, V17 = 1.33 VBE = 0.93 Vdc. Figure 19 shows the detector "S-Curves", in which the resistor ratio is varied while maintaining a constant gain (R17 is held at 62 k). R15 is 62 k for a 1:1 ratio; while R15 = 120 k and 180 k to produce the 2:1 and 3:1 ratios. The IF signal into the detector is swept 500 kHz about the 10.7 MHz IF center frequency. The resulting curve show how the resistor ratio and the supply voltage effects the symmetry of the "S-curve" (Figure 21 Test Setup). For the 3:1 and 2:1 ratio, symmetry is maintained with VS from 2.0 to 5.0 Vdc; however, for the 1:1 ratio, symmetry is lost at 2.0 Vdc. 2.5 R15:R17 = 1:1 VS = 2.0 Vdc Data Slicer Circuit C20 at the input of the data slicer is chosen to maintain a time constant long enough to hold the charge on the capacitor for the longest strings of bits at the same polarity. For a data rate at 576 kHz a bit stream of 15 bits at the same polarity would equate to an apparent data rate of approximately 77 kbps or 38 kHz. The time constant would be approximately 26 s. The following expression equates the time constant, t, to the external components: t + 2p (R18)(C20) Solve for C20: C 20 + t2p (R18) where the effective resistance R18 is a complex function of the demodulator feedback resistance and the data slicer input circuit. In the data input network the back to back diodes form a charge and discharge path for the capacitor at Pin 20; however, the diodes create a non-linear response. This resistance is loaded by the , beta of the detector output transistor; beta =100 is a typical value (see Figure 21). Thus, the apparent value of the resistance at Pin 18 (DS IN1) is approximately equal to: R 18 Y R17100 where R17 is 82 k, the feedback resistor from Pin 17 to 15. Therefore, substituting for R18 and solving for C20: C 20 + 15.9 (t)R17 + 5.04 nF The closest standard value is 4.7 nF. Figure 19. Detector Output Voltage versus Frequency Deviation DETECTOR OUTPUT VOLTAGE, V17 (Vdc) NOT RECOMMENDED FOR NEW DESIGNS The internal resistance, Rint at the quadrature tank Pin 13 is approximately 13 k and is considered in determining the external resistance, Rext which is calculated from Figure 21. Data Slicer Equivalent Input Circuit R15:R17 = 1:1 VS = 3.5 to 5.0 Vdc 2.0 R18 fc = 10.7 MHz R17 = 62 k Test Setup - Figure 20 1.5 1.0 0.5 R15:R17 = 2:1 VS = 2.0 to 5.0 Vdc R17/ C20 R15:R17 = 3:1 VS = 2.0 to 5.0 Vdc 0 - 600 - 400 - 200 0 200 400 600 18 20 VCC FREQUENCY DEVIATION (kHz) Figure 20. Demodulator "S-Curve" Test Setup EXT MOD In Wavetek Signal Generator Model 134 50 Output RF Out Sweep Out Lim In X Input Oscilloscope TEK 475 Signal Generator Fluke 6082A fc = 10.7 MHz f = 500 kHz Y Input DET Out MC13158 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13158 3.2-189 NOT RECOMMENDED FOR NEW DESIGNS MC13158 MC13158 0.9 0.6 0.3 RSSI RISE AND FALL TIMES, t r & t f ( s) 30 25 20 15 10 5.0 0 Figure 22. RSSI Output Voltage versus Signal Input Level 3.0 VCC = 4.0 Vdc 2.7 fRF = 112 MHz 2.4 fLO = 122.7 MHz fIF = 10.7 MHz 2.1 See Figure 12 for LCR filter 1.8 1.5 Series-Parallel Ceramic Filter 1.2 35 C C C C C EE C EE C EE C 0 C C C C C C EE C EE C EE C - 20 C C C C C EE C EE C EE C - 40 tr @ 22 k tf @ 22 k tr @ 47 k tf @ 47 k EE CC C CC C EE E CC C EE E CC C EE E C CC tr @ 100 k tf @ 100 k - 60 - 80 RF INPUT SIGNAL LEVEL (dBm) SINAD Performance Figure 24 shows a test setup for a narrowband demodulator output response in which a C-message filter and an active de-emphasis filter is used following the demodulator. The input is matched using a 1:4 impedance transformer. The SINAD performance is shown in Figure 25 with no preamp and in Figure 26 with a preamp (Preamp - Figure 16). The 12 dB SINAD sensitivity is -101 dBm with no preamp and -113 dBm with the preamp. Ceramic Filter LCR; Rext = 150 0 - 90 - 80 -70 - 60 - 50 - 40 - 30 - 20 -10 0 10 20 SIGNAL INPUT LEVEL (dBm) Figure 24. Test Setup for Narrowband SINAD Input Match HP8657B fc = 112 MHz fmod = 1.0 kHz f = 125 kHz MC13158 LO In HP8657B fc = 122.7 MHz PLO = - 6.0 dBm MC13158 3.2-190 LO Output IF 3.0 dB BW = 280 kHz Detector Out C-Message Filter Active De-emphasis HP334 Distortion Analyzer RF Voltmeter N+D N MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS Figure 23. RSSI Output Rise and Fall Times versus RF Input Signal Level RSSI In Figure 22, the RSSI versus RF Input Level shows the linear response of RSSI over a 65 dB range but it has extended capability over 80 dB from - 80 dBm to +10 dBm. The RSSI is measured in the application circuit (Figure 12) in which a SAW filter is used before the mixer; thus, the overall sensitivity is compromised for the sake of selectivity. The curves are shown for three filters having different bandwidths: 1) LCR Filter with 2.3 MHz 3.0 dB BW (Circuit and Component Placement is shown in Figure 12) 2) Series-Parallel Ceramic Filter with 650 kHz 3.0 dB BW (Murata Part # KMFC-545) 3) Ceramic Filter with 280 kHz 3.0 dB BW. RSSI OUTPUT VOLTAGE (Vdc) NOT RECOMMENDED FOR NEW DESIGNS SYSTEM PERFORMANCE DATA MC13158 Figure 25. S+N+D, N+D, N versus Input Signal Level (without preamp) Figure 26. S+N+D, N+D, N versus Input Signal Level (with preamp) 10 10 S+N+D S+N+D VS = 3.0 Vdc fdev = 125 kHz fmod = 1.0 kHz fRF = 112 MHz IF 3.0 dB BW = 280 kHz -10 - 20 N+D - 30 - 40 - 50 VS = 3.0 Vdc fdev = 125 kHz fmod = 1.0 kHz fRF = 112 MHz IF 3.0 dB BW = 280 kHz -10 - 20 N +D - 30 - 40 - 50 - 60 - 60 N -70 -120 -100 - 80 - 60 - 40 - 20 N -70 -120 0 -100 - 80 RF INPUT SIGNAL (dBm) - 60 - 40 - 20 0 RF INPUT SIGNAL (dBm) Figure 27. Input IP3, 1.0 dB Compression Pt. Test Setup 112 MHz FET Probe TEK P6201 MIXER 270 100 p 0.8-10 p Mini-Circuits ZSFC-4 4 Way Zero Degree Combiner 50 47 100 p To Spectrum Analyzer G3 = 18 dB NF3 = 14 dB 50 Local Oscillator HP8657B 112.1 MHz fLO - 122.7 MHz @ -6.0 dBm Figure 28. -1.0 dB Compression Pt. and Input Third Order Intercept -10 1.0 dB Comp. Pt. = - 39 dBm - 20 S+N+D, N+D, N (dB) IP3 = - 32 dBm - 30 - 40 - 50 VS = 3.5 Vdc fRF1 = 112 kHz fRF2 = 112.1 kHz fLO = 122.7 MHz PLO = - 6.0 dBm See Figure 27 - 60 -70 - 80 - 60 - 50 - 40 - 30 - 20 RF INPUT SIGNAL LEVEL (dBm) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13158 3.2-191 NOT RECOMMENDED FOR NEW DESIGNS 0 S+N+D, N+D, N (dB) S+N+D, N+D, N (dB) NOT RECOMMENDED FOR NEW DESIGNS 0 MC13158 MC13158 VCC 3.8 MC13158 3.2-192 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS Figure 29. Circuit Side View MC13158 VEE VCC DS OFF QUAD COIL 10.7 P CERAMIC FILTER 10.7 S CERAMIC FILTER 10.7 P CERAMIC FILTER 10.7 S CERAMIC FILTER DS OPEN/ IN2 DS OUT XTAL SAW FILTER LO RSSI OUT RF INPUT MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13158 MC13158 3.2-193 NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS Figure 30. Ground Side View MC13176 The MC13176 is a one chip FM/AM transmitter subsystem designed for AM/FM communication systems. It include a Colpitts crystal reference oscillator, UHF oscillator, /32 prescaler and phase detector forming a versatile PLL system. Targeted applications are in the 260 to 470 MHz band and the 902 to 928 MHz band covered by FCC Title 47; Part 15. Other applications include local oscillator sources in UHF and 900 MHz receivers, UHF and 900 MHz video transmitters, RF Local Area Networks (LANs), and high frequency clock drivers. The MC13176 offers the following features: * UHF Current Controlled Oscillator * * * * * * * * * UHF FM/AM TRANSMITTER SEMICONDUCTOR TECHNICAL DATA Uses Easily Available 3rd Overtone or Fundamental Crystals for Reference Fewer External Parts Required Low Operating Supply Voltage (1.8 to 5.0 Vdc) Low Supply Drain Currents Power Output Adjustable (Up to 10 dBm) Differential Output for Loop Antenna or Balun Transformer Networks 16 1 Power Down Feature ASK Modulated by Switching Output On and Off fo = 32 x fref D SUFFIX PLASTIC PACKAGE CASE 751B (SO-16) Figure 1. Typical Application as 320 MHz AM Transmitter PIN CONNECTIONS AM Modulator Osc Tank 1 1.3k 16 0.01 2 Coilcraft 150-05J08 VEE 3 14 4 13 0.1 150p (1) 150p RFout SMA Z = 50 f/32 RFC1 5 12 6 11 7 10 8 9 1.0k 16 Imod Osc 1 1 15 0.165 (2) VEE S2 Out Gnd NC 2 15 NC 3 14 Out 2 Osc 4 4 13 Out 1 VEE 5 12 VCC VCC 27k S1 VEE 0.1 ICont 6 11 Enable PDout 7 10 Reg. Gnd Xtale 8 9 Xtalb 100p 180p VCC NOTES: 1. 2. 2. 2. Crystal Fundamental 10 MHz VCC 50 coaxial balun, 1/10 wavelength at 320 MHz equals 1.5 inches. Pins 5, 10 & 15 are ground and connected to VEE which is the component/DC ground plane side of PCB. These pins must be decoupled to VCC; decoupling capacitors should be placed as close as possible to the pins. MC13176 3.2-194 ORDERING INFORMATION Device Operating Temperature Range Package MC13176D TA = - 40 to 85C SO-16 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS UHF FM/AM Transmitter MC13176 NOT RECOMMENDED FOR NEW DESIGNS Rating Symbol Value Unit Power Supply Voltage VCC 7.0 (max) Vdc Operating Supply Voltage Range VCC 1.8 to 5.0 Vdc Junction Temperature TJ 150 C Operating Ambient Temperature TA -40 to 85 C Tstg -65 to 150 C Storage Temperature ELECTRICAL CHARACTERISTICS (Figure 2; VEE = - 3.0 Vdc, TA = 25C, unless otherwise noted.)* Pin Symbol Min Typ Max Unit Supply Current (Power down: I11 & I16 = 0) - IEE1 -0.5 - - A Supply Current (Enable [Pin 11] to VCC thru 30 k, I16 = 0) - IEE2 -18 -14 - mA Total Supply Current (Transmit Mode) (Imod = 2.0 mA; fo = 320 MHz) - IEE3 - 39 -34 - mA Differential Output Power (fo = 320 MHz; Vref [Pin 9] = 500 mVp-p; fo = N x fref) Imod = 2.0 mA (see Figure 7) Imod = 0 mA 13 & 14 Pout Hold-in Range ( fref x N) (see Figure 7) 13 & 14 Characteristic dBm 2.0 - 4.7 -45 - - f H 4.0 8.0 - MHz 7 lerror 22 27 - A 11 & 8 tenable - 4.0 - ms 16 BWAM - 25 - MHz Spurious Outputs (Imod = 2.0 mA) Spurious Outputs (Imod = 0 mA) 13 & 14 13 & 14 Pson Psoff - - -50 -50 - - dBc Maximum Divider Input Frequency Maximum Output Frequency - 13 & 14 fdiv fo - - 950 950 - - MHz Phase Detector Output Error Current Oscillator Enable Time (see Figure 26) Amplitude Modulation Bandwidth (see Figure 28) * For testing purposes, VCC is ground (see Figure 2). Figure 2. 320 MHz Test Circuit Imod Osc Tank VEE (1) Coilcraft 150-03J0 8 16 2 15 0.1 0.1 3 0.098 4 14 f/N 5 0.1 27p 1 10k 51 0.01 51 0.01 13 12 VCC RFout 2 (1) 10k 15p 6 11 7 10 8 9 2.2k RFout 1 30k Ireg. enable 0.1 33p Crystal Fundamental VCC 10 MHz NOTES: 1. VCC is ground; while VEE is negative with respect to ground. 2. Pins 5, 10 and 15 are brought to the circuit side of the PCB via plated through holes. They are connected together with a trace on the PCB and each Pin is decoupled to VCC (ground). MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13176 3.2-195 NOT RECOMMENDED FOR NEW DESIGNS MAXIMUM RATINGS ( TA = 25C, unless otherwise noted.) MC13176 Pin Symbol 1&4 Osc 1, Osc 4 Internal Equivalent Circuit Description/External Circuit Requirements VCC 10k 10k 1 0sc 1 5 4 Osc 4 VEE VEE 5 6 ICont Supply Ground (VEE) In the PCB layout, the ground pins (also applies to Pins 10 and 15) should be connected directly to chassis ground. Decoupling capacitors to VCC should be placed directly at the ground returns. Subcon VEE VEE Frequency Control For VCC = 3.0 Vdc, the voltage at Pin 6 is approximately 1.55 Vdc. The oscillator is current controlled by the error current from the phase detector. This current is amplified to drive the current source in the oscillator section which controls the frequency of the oscillator. Figures 8 and 9 show the fosc versus ICont, Figure 5 shows the fosc versus ICont at - 40C, + 25C and + 85C for 320 MHz. The CCO may be FM modulated as shown in Figures 17 and 18, MC13176 320 MHz FM Transmitter. A detailed discussion is found in the Applications Information section. VCC Reg 6 ICont 7 PDout VCC 4.0k 4.0k PDout 7 MC13176 3.2-196 CCO Inputs The oscillator is a current controlled type. An external oscillator coil is connected to Pins 1 and 4 which forms a parallel resonance LC tank circuit with the internal capacitance of the IC and with parasitic capacitance of the PC board. Three base-emitter capacitances in series configuration form the capacitance for the parallel tank. These are the base-emitters at Pins 1 and 4 and the base-emitter of the differential amplifier. The equivalent series capacitance in the differential amplifier is varied by the modulating current from the frequency control circuit (see Pin 6, internal circuit). A more thorough discussion is found in the Applications Information section. Phase Detector Output The phase detector provides 30 A to keep the CCO locked at the desired carrier frequency. The output impedance of the phase detector is approximately 53 k. Under closed loop conditions there is a DC voltage which is dependent upon the free running oscillator and the reference oscillator frequencies. The circuitry between Pins 7 and 6 should be selected for adequate loop filtering necessary to stabilize and filter the loop response. Low pass filtering between Pin 7 and 6 is needed so that the corner frequency is well below the sum of the divider and the reference oscillator frequencies, but high enough to allow for fast response to keep the loop locked. Refer to the Applications Information section regarding loop filtering and FM modulation. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS PIN FUNCTION DESCRIPTIONS MC13176 Pin Symbol 8 Xtale Internal Equivalent Circuit Xtalb 8.0k 12k Xtalb 8 10 4.0k Xtale Reg. Gnd Regulator Ground An additional ground pin is provided to enhance the stability of the system. Decoupling to the VCC (RF ground) is essential; it should be done at the ground return for Pin 10. VCC Reg .0 5.0p 11 Enable 11 Enable Subcon 8.0k 2.4k 10 Reg. Gnd 12 VCC 12 VCC Out 1 and Out 2 Differential Output The output is configured differentially to easily drive a loop antenna. By using a transformer or balun, as shown in the application schematic, the device may then drive an unbalanced low impedance load. Figure 6 shows how much the Output Power and Free-Running Oscillator Frequency change with temperature at 3.0 Vdc; Imod = 2.0 mA. VCC 15 113 Out_Gnd Out 1 16 Imod 15 Out_Gnd Device Enable The potential at Pin 11 is approximately 1.25 Vdc. When Pin 11 is open, the transmitter is disabled in a power down mode and draws less than 1.0 A ICC if the MOD at Pin 16 is also open (i.e., it has no current driving it). To enable the transmitter a current source of 10 A to 90 A is provided. Figures 3 and 4 show the relationship between ICC, VCC and Ireg. enable. Note that ICC is flat at approximately 10 mA for Ireg. enable = 5.0 to 100 A (Imod = 0). Supply Voltage (VCC) The operating supply voltage range is from 1.8 Vdc to 5.0 Vdc. In the PCB layout, the VCC trace must be kept as wide as possible to minimize inductive reactances along the trace; it is best to have it completely fill around the surface mount components and traces on the circuit side of the PCB. VCC 13 & 14 Crystal Oscillator Inputs The internal reference oscillator is configured as a common emitter Colpitts. It may be operated with either a fundamental or overtone crystal depending on the carrier frequency and the internal prescaler. Crystal oscillator circuits and specifications of crystals are discussed in detail in the applications section. With VCC = 3.0 Vdc, the voltage at Pin 8 is approximately 1.8 Vdc and at Pin 9 is approximately 2.3 Vdc. 500 to 1000 mVp-p should be present at Pin 9. The Colpitts is biased at 200 A; additional drive may be acquired by increasing the bias to approximately 500 A. Use 6.2 k from Pin 8 to ground. VCC 9 9 Description/External Circuit Requirements 114 1 16 Out 2 Imod Output Ground This additional ground pin provides direct access for the output ground to the circuit board VEE. AM Modulation/Power Output Level The DC voltage at this pin is 0.8 Vdc with the current source active. An external resistor is chosen to provide a source current of 1.0 to 3.0 mA, depending on the desired output power level at a given VCC. Figure 27 shows the relationship of Power Output to Modulation Current, Imod. At VCC = 3.0 Vdc, 3.5 dBm power output can be acquired with about 35 mA ICC. For FM modulation, Pin 16 is used to set the desired output power level as described above. For AM modulation, the modulation signal must ride on a positive DC bias offset which sets a static (modulation off) modulation current. External circuitry for various schemes is further discussed in the Applications Information section. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13176 3.2-197 NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS PIN FUNCTION DESCRIPTIONS MC13176 Figure 3. Supply Current versus Supply Voltage Figure 4. Supply Current versus Regulator Enable Current 100 6.0 4.0 2.0 1.0 2.0 3.0 VCC, SUPPLY VOLTAGE (Vdc) 4.0 10 1.0 0.1 5.0 10 5.0 VCC = 3.0 Vdc Imod = 2.0 mA f = 320 MHz (ICont = 0; TA = 25 C) Free-Running Oscillator 0 - 40 C - 5.0 25 C -10 85 C - 20 0 20 40 60 ICont, OSCILLATOR CONTROL CURRENT (A) f ref , REFERENCE OSCILLATOR FREQUENCY (MHz) -15 - 40 1000 Figure 6. Change in Oscillator Frequency and Output Power versus Ambient Temperature 80 f OSC , OSCILLATOR FREQUENCY (MHz) Figure 5. Change Oscillator Frequency versus Oscillator Control Current 1.0 10 100 Ireg. enable, REGULATOR ENABLE CURRENT (A) 4.0 3.0 5.5 fosc PO 5.0 2.0 1.0 4.5 0 4.0 -1.0 - 2.0 - 3.0 - 4.0 - 50 VCC = 3.0 Vdc Imod = 2.0 mA f = 320 MHz (ICont = 0; TA = 25C) Free-Running Oscillator 0 50 TA, AMBIENT TEMPERATURE (C) 3.5 PO , OUTPUT POWER (dBm) 0 VCC = 3.0 Vdc Imod = 0 3.0 100 Figure 7. Reference Oscillator Frequency versus Phase Detector Current 10.3 Closed Loop Response: VCC = 3.0 Vdc fo = 32 x fref Vref = 500 mVp-p 10.2 10.1 MC13176 3.2-198 Imod = 1.0 mA ICC = 22 mA PO = -1.1 dBm 10 Imod = 2.0 mA ICC = 35.5 mA PO = 4.7 dBm 9.9 9.8 - 30 - 20 -10 0 10 20 I7, PHASE DETECTOR CURRENT (A) 30 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS I CC , SUPPLY CURRENT (mA) I CC , SUPPLY CURRENT (mA) Ireg. enable = 90 A Imod = 0 8.0 0 f OSC , OSCILLATOR FREQUENCY (MHz) NOT RECOMMENDED FOR NEW DESIGNS 10 MC13176 Figure 9. Change in Oscillator Frequency versus Oscillator Control Current 10 VCC = 3.0 Vdc Imod = 2.0 mA TA = 25 C fosc (ICont @ 0) 320 MHz 0 -10 - 20 - 30 - 40 -100 0 100 200 300 400 500 ICont, OSCILLATOR CONTROL CURRENT (A) 600 20 10 VCC = 3.0 Vdc Imod = 2.0 mA TA = 25 C fosc (ICont @ 0) 450 MHz 0 -10 - 20 - 30 - 40 -100 400 500 0 100 200 300 ICont, OSCILLATOR CONTROL CURRENT (A) 600 APPLICATIONS INFORMATION Evaluation PC Board The evaluation PCB, shown in Figures 32 and 33, is very versatile and is intended to be used across the entire useful frequency range of this device. The center section of the board provides an area for attaching all SMT components to the circuit side and radial leaded components to the component ground side of the PCB (see Figures 34 and 35). Additionally, the peripheral area surrounding the RF core provides pads to add supporting and interface circuitry as a particular application dictates. This evaluation board will be discussed and referenced in this section. Current Controlled Oscillator (Pins 1 to 4) It is critical to keep the interconnect leads from the CCO (Pins 1 and 4) to the external inductor symmetrical and equal in length. With a minimum inductor, the maximum free running frequency is greater than 1.0 GHz. Since this inductor will be small, it may be either a microstrip inductor, an air wound inductor or a tuneable RF coil. An air wound inductor may be tuned by spreading the windings, whereas tuneable RF coils are tuned by adjusting the position of an aluminum core in a threaded coilform. As the aluminum core coupling to the windings is increased, the inductance is decreased. The temperature coefficient using an aluminum core is better than a ferrite core. The UniCoil inductors made by Coilcraft may be obtained with aluminum cores (Part No. 51-129-169). Ground (Pins 5, 10 and 15) Ground Returns: It is best to take the grounds to a backside ground plane via plated through holes or eyelets at the pins. The application PCB layout implements this technique. Note that the grounds are located at or less than 100 mils from the devices pins. Decoupling: Decoupling each ground pin to VCC isolates each section of the device by reducing interaction between sections and by localizing circulating currents. Loop Characteristics (Pins 6 and 7) Figure 10 is the component block diagram of the MC13176D PLL system where the loop characteristics are described by the gain constants. Access to individual components of this PLL system is limited, inasmuch as the loop is only pinned out at the phase detector output and the frequency control input for the CCO. However, this allows for characterization of the gain constants of these loop components. The gain constants Kp, Ko and Kn are well defined in the MC13176. Phase Detector (Pin 7) With the loop in lock, the difference frequency output of the phase detector is DC voltage that is a function of the phase difference. The sinusoidal type detector used in this IC has the following transfer characteristic: Ie = A Sin e The gain factor of the phase detector, Kp (with the loop in lock) is specified as the ratio of DC output current, le to phase error, e: Kp = Ie/e (Amps/radians) Kp = A Sin e/e Sin e ~ e for e 0.2 radians; thus, Kp = A (Amps/radians) Figure 7 shows that the detector DC current is approximately 30 A where the loop loses lock at e = + /2 radians; therefore, K p is 30 A/radians. Current Controlled Oscillator, CCO (Pin 6) Figures 8 and 9 show the non-linear change in frequency of the oscillator over an extended range of control current for 320 and 450 MHz applications. K o ranges from approximately 6.3x105 rad/sec/A or 100 kHz/A (Figure 8) to 8.8x105 rad/sec/A or 140 kHz/A (Figure 9) over a relatively linear response of control current (0 to 100 A). The oscillator gain factor depends on the operating range of the control current (i.e., the slope is not constant). Included in the CCO gain factor is the internal amplifier which can sink and source at least 30 A of input current from the phase detector. The internal circuitry at Pin 6 limits the CCO control current to 50 A of source capability while its sink capability exceeds 200 A as shown in Figures 8 and 9. Further information to follow shows how to use the full capabilities of the CCO by addition of an external loop amplifier and filter (see Figure 14). This additional circuitry yields at Ko = 0.145 MHz/A or 9.1x105 rad/sec/A. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13176 3.2-199 NOT RECOMMENDED FOR NEW DESIGNS 20 f OSC , OSCILLATOR FREQUENCY (MHz) NOT RECOMMENDED FOR NEW DESIGNS f OSC , OSCILLATOR FREQUENCY (MHz) Figure 8. Change in Oscillator Frequency versus Oscillator Control Current MC13176 Phase Detector e(s) Kp = 30 A/rad Pin 7 fn = fo/N Low Pass Filter Kf n(s) = o(s)/N Pin 6 Divider Kn = 1/N Where: Kp = = Kf = Kn = Ko = Amplifier and Current Controlled Oscillator o(s) Phase detector gain constant in A/rad; Kp = 30 A/rad Filter transfer function 1/N; N = 32 CCO gain constant in rad/sec/A Ko = 9.1 x 105 rad/sec/A N = 32 : MC13176 Ko = 0.91Mrad/sec/A fo = nfi Pins 13,14 Loop Filtering The fundamental loop characteristics, such as capture range, loop bandwidth, lock-up time and transient response are controlled externally by loop filtering. The natural frequency (n) and damping factor () are important in the transient response to a step input of phase or frequency. For a given and lock time, n can be determined from the plot shown in Figure 11. Figure 11. Type 2 Second Order Response 1.9 = 0.1 1.8 The loop filter may take the form of a simple low pass filter or a lag-lead filter which creates an additional pole at origin in the loop transfer function. This additional pole along with that of the CCO provides two pure integrators (1/s2). In the lag-lead low pass network shown in Figure 12, the values of the low pass filtering parameters R1, R2 and C determine the loop constants n and . The equations t1 = R1C and t2 = R2C are related in the loop filter transfer functions F(s) = 1 + t2s/1 + (t1 + t2)s. Figure 12. Lag-Lead Low Pass Filter 1.7 1.6 0.2 Vin 1.5 R1 The closed loop transfer function takes the form of a 2nd order low pass filter given by, 0.4 1.3 1.2 0.5 1.1 H(s) = KvF(s)/s + KvF(s) From control theory, if the loop filter characteristic has F(0) = 1, the DC gain of the closed loop, Kv is defined as, 0.6 1.0 0.7 0.9 0.8 Kv = KpKoKn and the transfer function has a natural frequency, 1.0 0.8 n = (Kv/t1 + t2)1/2 1.5 0.7 and a damping factor, 2.0 0.6 VO R2 C 0.3 1.4 = (n/2) (t2 + 1/Kv) 0.5 Rewriting the above equations and solving for the MC13176 with = 0.707 and n = 5.0 k rad/sec: 0.4 0.3 Kv = KpKoKn = (30) (0.91 106) (1/32) = 0.853 106 6 t1 + t2 = Kv/n2 = 0.853 10 /(25 106) = 34.1 ms t2 = 2/n = (2) (0.707)/(5 103) = 0.283 ms t1 = (Kv/n2) - t2= (34.1 - 0.283) = 33.8 ms 0.2 0.1 0 For = 0.707 and lock time = 1.0 ms; then n = 5.0/t = 5.0 krad/sec. 0 1.0 2.0 3.0 MC13176 3.2-200 4.0 5.0 6.0 7.0 8.0 9.0 nt 10 11 12 13 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS i(s) fi = f ref Pins 9,8 o (t), NORMALIZED OUTPUT RESPONSE NOT RECOMMENDED FOR NEW DESIGNS Figure 10. Block Diagram of MC1317XD PLL MC13176 For C = 0.47 ; then, R1 = t1/C = 33.8 10-3/0.47 10-6 = 72 k -3 dthus, R2 = t2/C = 0.283 10 /0.47 10-6 = 0.60 k In the above example, the following standard value components are used, H = Kv N where, Kv = KpKoKn. C = 0.47 ; R2 = 620 and R1 = 72 k - 53 k ~ 18 k (R1 is defined as R1 - 53 k, the output impedance of the phase detector.) Since the output of the phase detector is high impedance (~50 k) and serves as a current source, and the input to the frequency control, Pin 6 is low impedance (impedance of the two diode to ground is approximately 500 ), it is imperative that the second order low pass filter design above be modified. In order to minimize loading of the R2C shunt network, a higher impedance must be established to Pin 6. A simple solution is achieved by adding a low pass network between the passive second order network and the input to Pin 6. This helps to minimize the loading effects on the second order low pass while further suppressing the sideband spurs of the crystal oscillator. A low pass filter with R3 = 1.0 k and C2 = 1500 p has a corner frequency (fc) of 106 kHz; the reference sideband spurs are down greater than - 60 dBc. 18k 1.0k R1 620 R2 0.47 C H = 27.3 Mrad/sec fH = 4.35 MHz Extended Hold-in Range The hold-in range of about 3.4% could cause problems over temperature in cases where the free-running oscillator drifts more than 2 to 3% because of relatively high temperature coefficients of the ferrite tuned CCO inductor. This problem might worsen for lower frequency applications where the external tuning coil is large compared to internal capacitance at Pins 1 and 4. To improve hold-in range performance, it is apparent that the gain factors involved must be carefully considered. Kn Kp Ko Ko Ko Ko Ko Ko Ko Ka Ka Pin 6 R3 C3 In the above example, Figure 13. Modified Low Pass Loop Filter Pin 7 measurement of the hold-in range (i.e. fref N = fH 2). Since sin e cannot exceed 1.0, as e approaches /2 the hold-in range is equal to the DC loop gain, Kv N. 1500p VCC = = = = = = = = = = = is 1/32 in the MC13176. is fixed internally and cannot be altered. Figures 8 and 9 suggest that there is capability of greater control range with more current swing. However, this swing must be symmetrical about the center of the dynamic response. The suggested zero current operating point for 100 A swing of the CCO is at about + 70 A offset point. External loop amplification will be necessary since the phase detector only supplies 30 A. In the design example in Figure 14, an external resistor (R5) of 15 k to VCC (3.0 Vdc) provides approximately 100 A of current boost to supplement the existing 50 A internal source current. R4 (1.0 k) is selected for approximately 0.1 Vdc across it with 100 A. R1, R2 and R3 are selected to set the potential at Pin 7 and the base of 2N4402 at approximately 0.9 Vdc and the emitter at 1.55 Vdc when error current to Pin 6 is approximately zero A. C1 is chosen to reduce the level of the crystal sidebands. Hold-In Range The hold-in range, also called the lock range, tracking range and synchronization range, is the ability of the CCO frequency, fo to track the input reference signal, fref * N as it gradually shifted away from the free running frequency, ff. Assuming that the CCO is capable of sufficient frequency deviation and that the internal loop amplifier and filter are not overdriven, the CCO will track until the phase error, e approaches /2 radians. Figures 5 through 7 are a direct Figure 14. External Loop Amplifier VCC = 3.0Vdc 12 30A Phase Detector Output C1 R3 1000p R1 68k R2 33k R5 R4 1.0k 2N4402 7 30A 4.7k MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 50A 15k 1.6V 6 Oscillator Control Circuitry 5, 10, 15 MC13176 3.2-201 NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS MC13176 Figure 15. MC13176 Reference Oscillator Frequency versus Oscillator Control Current 10.6 10.4 10.2 10 Closed Loop Response: fo = 32 x fref VCC = 3.0 Vdc ICC = 38 mA Pout = 4.8 dB Imod = 2.0 mA Vref = 500 mVp-p 9.8 9.6 9.4 -150 -100 - 50 0 50 I6, OSCILLATOR CONTROL CURRENT (A) 100 Lock-in Range/Capture Range If a signal is applied to the loop not equal to free running frequency, ff , then the loop will capture or lock-in the signal by making f s = f o (i.e. if the initial frequency difference is not too great). The lock-in range can be expressed as L ~ 2 n FM Modulation Noise external to the loop (phase detector input) is minimized by narrowing the bandwidth. This noise is minimal in a PLL system since the reference frequency is usually derived from a crystal oscillator. FM can be achieved by applying a modulation current superimposed on the control current of the CCO. The loop bandwidth must be narrow enough to prevent the loop from responding to the modulation frequency components, thus, allowing the CCO to deviate in frequency. The loop bandwidth is related to the natural frequency n. In the lag-lead design example where the natural frequency, n = 5.0 krad/sec and a damping factor, = 0.707, the loop bandwidth = 1.64 kHz. Characterization data of the closed loop responses at 320 MHz (Figure 7) show satisfactory performance using only a simple low-pass loop filter network. The loop filter response is strongly influenced by the high output impedance of the push-pull current output of the phase detector. MC13176 3.2-202 fc = 0.159/RC; For R = 1.0 k + R7 (R7 = 53 k) and C = 390 pF fc = 7.55 kHz or c = 47 krad/sec The application example in Figure 17 of a 320 MHz FM transmitter demonstrates the FM capabilities of the IC. A high value series resistor (100 k) to Pin 6 sets up the current source to drive the modulation section of the chip. Its value is dependent on the peak to peak level of the encoding data and the maximum desired frequency deviation. The data input is AC coupled with a large coupling capacitor which is selected for the modulating frequency. The component placements on the circuit side and ground side of the PC board are shown in Figures 34 and 35, respectively. Figure 19 illustrates the input data of a 10 kHz modulating signal at 1.6 Vp-p. Figures 20 and 21 depict the deviation and resulting modulation spectrum showing the carrier null at - 40 dBc. Figure 22 shows the unmodulated carrier power output at 3.5 dBm for VCC = 3.0 Vdc. For voice applications using a dynamic or an electret microphone, an op amp is used to amplify the microphone's low level output. The microphone amplifier circuit is shown in Figure 16. Figure 18 shows an application example for NBFM audio or direct FSK in which the reference crystal oscillator is modulated. Figure 16. Microphone Amplifier Data Input VCC 3.3k Voice Input 1.0k 100k 120k 3.9k 10k 10k Electret Microphone VCC 1.0 MC33171 Data or Audio Output Local Oscillator Application To reduce internal loop noise, a relatively wide loop bandwidth is needed so that the loop tracks out or cancels the noise. This is emphasized to reduce inherent CCO and divider noise or noise produced by mechanical shock and environmental vibrations. In a local oscillator application the CCO and divider noise should be reduced by proper selection of the natural frequency of the loop. Additional low pass filtering of the output will likely be necessary to reduce the crystal sideband spurs to a minimal level. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS f ref , REFERENCE OSCILLATOR FREQUENCY (MHz) NOT RECOMMENDED FOR NEW DESIGNS Figure 15 shows the improved hold-in range of the loop. The fref is moved 950 kHz with over 200 A swing of control current for an improved hold-in range of 15.2 MHz or 95.46 Mrad/sec. MC13176 Figure 17. 320 MHz MC13176D FM Transmitter RF Level Adjust 1.1k 1 5.0k 16 0.047 2 15 3 14 CW Coilcraft 146-04J08 (1) SMA 0.146 0.47 130k 510p 13 f/32 0.1 9.1k RFC1 (3) 5 12 6 11 VCC (2) VEE 15k 18k 2N4402 7 10 8 9 0.47 100k 33k VCC 27k 1.0k 620 RF Output to Antenna 50 4 VCC = 3.8 to 3.3 Vdc VCC NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS Osc Tank VCC 51p Data Input (1.6 Vp-p) 220p 51p 6.8 (4) Crystal Fundamental 10 MHz (5) NOTES: 1. 50 coaxial balun, 2 inches long. 2. Pins 5, 10 and 15 are grounds and connnected to VEE which is the component's side ground plane. These pins must be decoupled to VCC; decoupling capacitors should be placed as close as possible to the pins. 3. RFC1 is 180 nH Coilcraft surface mount inductor or 190 nH Coilcraft 146-05J08. 4. Recommended source is a Coilcraft "slot seven" 7.0 mm tuneable inductor, part #7M3-682. 5. The crystal is a parallel resonant, fundamental mode calibrated with 32 pF load capacitance. Figure 18. 320 MHz NBFM Transmitter RF Level Adjust 1.0k Osc Tank 1 5.0k 16 0.047 2 15 3 14 Coilcraft 146-04J08 SMA 130k 6.2k 0.1 9.1k f/32 470p 13 RFC1 (3) 5 12 6 11 VCC (3.6 Vdc - Lithium Battery) (2) VEE 15k VCC 27k 1.0k 15k 2N4402 7 10 8 9 0.47 33k VCC 10p External Loop Amp 100p RF Output to Antenna UT-034 4 4700p CW (1) 0.146 VCC VCC 180p (6) Crystal Fundamental 10MHz RFC2 (4) 1.0k 10 RFC3 (5) MMBV432L NOTES: 1. 50 coaxial balun, 2 inches long. 2. Pins 5, 10 and 15 are grounds and connnected to VEE which is the component's side ground plane. These pins must be decoupled to VCC; decoupling capacitors should be placed as close as possible to the pins. 3. RFC1 is 180 nH Coilcraft surface mount inductor. 4. RFC2 and RFC3 are high impedance crystal frequency of 10 MHz; 8.2 H molded inductor gives XL > 1000 .. 5. A single varactor like the MV2105 may be used whereby RFC2 is not needed. 6. The crystal is a parallel resonant, fundamental mode calibrated with 32 pF load capacitance. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA VCC + 0.01 Audio or Data Input MC13176 3.2-203 MC13176 NOT RECOMMENDED FOR NEW DESIGNS Figure 21. Modulation Spectrum Figure 22. Unmodulated Carrier -10 - 20 - 30 - 40 (dBc) (dBc) Reference Crystal Oscillator (Pins 8 and 9) Selection of Proper Crystal: A crystal can operate in a number of mechanical modes. The lowest resonant frequency mode is its fundamental while higher order modes are called overtones. At each mechanical resonance, a crystal behaves like a RLC series-tuned circuit having a large inductor and a high Q. The inductor Ls is series resonance with a dynamic capacitor, Cs determined by the elasticity of the crystal lattice and a series resistance Rs, which accounts for the power dissipated in heating the crystal. This series RLC circuit is in parallel with a static capacitance, Cp which is created by the crystal block and by the metal plates and leads that make contact with it. Figure 23 is the equivalent circuit for a crystal in a single resonant mode. It is assumed that other modes of resonance are so far off frequency that their effects are negligible. Series resonant frequency, fs is given by; fs = 1/2(LsCs)1/2 and parallel resonant frequency, fp is given by; fp = fs(1 + Cs/Cp)1/2 MC13176 3.2-204 Figure 23. Crystal Equivalent Circuit L3 Cp R3 C3 the frequency separation at resonance is given by; f = fp-fs = fs[1 - (1 + Cs/Cp)1/2] Usually fp is less than 1% higher than fs, and a crystal exhibits an extremely wide variation of the reactance with frequency between fp and fs. A crystal oscillator circuit is very stable with frequency. This high rate of change of impedance with frequency stabilizes the oscillator, because any significant change in oscillator frequency will cause a large phase shift in the feedback loop keeping the oscillator on frequency. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS Figure 20. Frequency Deviation Figure 19. Input Data Waveform Manufacturers specify crystal for either series or parallel resonant operation. The frequency for the parallel mode is calibrated with a specified shunt capacitance called a "load capacitance." The most common value is 30 to 32 pF. If the load capacitance is placed in series with the crystal, the equivalent circuit will be series resonance at the specified parallel-resonant frequency. Frequencies up to 20 MHz use parallel resonant crystal operating in the fundamental mode, while above 20 MHz to about 60 MHz, a series resonant crystal specified and calibrated for operation in the overtone mode is used. Application Examples Two types of crystal oscillator circuits are used in the applications circuits: 1) fundamental mode common emitter Colpitts (Figures 1, 17, 18, and 24), and 2) third overtone impedance inversion Colpitts (also Figures 1 and 24). The fundamental mode common emitter Colpitts uses a parallel resonant crystal calibrated with a 32 pf load capacitance. The capacitance values are chosen to provide excellent frequency stability and output power of > 500 mVp-p at Pin 9. In Figures 1 and 24, the fundamental mode reference oscillator is fixed tuned relying on the repeatability of the crystal and passive network to maintain the frequency, while in the circuit shown in Figures 17 and 18, the oscillator frequency can be adjusted with the variable inductor for the precise operating frequency. The reference oscillator can be operated as high as 60 MHz with a third overtone crystal. Therefore, it is possible to use the MC13176 up to 950 MHz (based on the maximum capability of the divider network). Enable (Pin 11) The enabling resistor at Pin 11 is calculated by: Reg. enable = VCC - 1.0 Vdc/Ireg. enable From Figure 4, Ireg. enable is chosen to be 75 A. So, for a VCC = 3.0 Vdc Rreg. enable = 26.6 k, a standard value 27 k resistor is adequate. Layout Considerations Supply (Pin 12): In the PCB layout, the VCC trace must be kept as wide as possible to minimize inductive reactance along the trace; it is best that VCC (RF ground) completely fills around the surface mounted components and interconnect traces on the circuit side of the board. This technique is demonstrated in the evaluation PC board. Battery/Selection/Lithium Types The device may be operated from a 3.0 V lithium battery. Selection of a suitable battery is important. Because one of the major problems for long life battery powered equipment is oxidation of the battery terminals, a battery mounted in a clip-in socket is not advised. The battery leads or contact post should be isolated from the air to eliminate oxide build-up. The battery should have PC board mounting tabs which can be soldered to the PCB. Consideration should be given for the peak current capability of the battery. Lithium batteries have current handling capabilities based on the composition of the lithium compound, construction and the battery size. A 1300 mA/hr rating can be achieved in the c y l i n d r i c a l c e l l b a t t e r y. T h e R a y o v a c C R 2 / 3 A lithium-manganese dioxide battery is a crimp sealed, spiral wound 3.0 Vdc, 1300 mA/hr cylindrical cell with PC board mounting tabs. It is an excellent choice based on capacity and size (1.358 long by 0.665 in diameter). Differential Output (Pins 13, 14) The availability of micro-coaxial cable and small baluns in surface mount and radial-leaded components allows for simple interface to the output ports. A loop antenna may be directly connected with bias via RFC or 50 resistors. Antenna configuration will vary depending on the space available and the frequency of operation. AM Modulation (Pin 16) Amplitude Shift Key: The MC13176 is designed to accommodate Amplitude Shift Keying (ASK). ASK modulation is a form of digital modulation corresponding to AM. The amplitude of the carrier is switched between two or more values in response to the PCM code. For the binary case, the usual choice is On-Off Keying (often abbreviated OOK). The resultant amplitude modulated waveform consists of RF pulses called marks, representing binary 1 and spaces representing binary 0. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13176 3.2-205 NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS MC13176 MC13176 Rmod 3.3k Osc Tank 1 16 2 15 3 14 0.01 Coilcraft 150-05J08 VEE (1) 0.165 0.1 150p f/32 150p 13 RFOut RFC1 5 12 6 11 1.0k 7 10 8 9 VCC 27k S1 VEE (4) 0.1 180p 100p Crystal Fundamental 10 MHz VCC NOTES: 1. 50 coaxial balun, 1/10 wavelength line (1.5) provides the best match to a 50 load. 2. Pins 5, 10 and 15 are ground and connnected to VEE which is the component/DC ground plane side of PCB. These pins must be decoupled to VCC; decoupling capacitors should be placed as close as possible to the pins. Figure 24 shows a typical application in which the output power has been reduced for linearity and current drain. The current draw on the device is 16 mA ICC (average) and - 22.5 dBm (average power output) using a 10 kHz modulating rate for the on-off keying. This equates to 20 mA and - 2.3 dBm "On", 13 mA and - 41 dBm "Off". In Figure 25, the device's modulating waveform and encoded carrier are MC13176 3.2-206 SM A Z = 50 4 (2) VEE (3) On-Off Keyed Input TTL Level 10 kHz VCC 3. The On-Off keyed signal turns the output of the transmitter off and on with TTL level pulses through Rmod at Pin 16. The "On" power and ICC is set by the resistor which sets Imod = VTTL - 0.8 / Rmod. (see Figure 27). 4. S1 simulates an enable gate pulse from a microprocessor which will enable the transmitter. (see Figure 4 to determine precise value of the enabling resistor based on the potential of the gate pulse and the desired enable.) displayed. The crystal oscillator enable time is needed to set the acquisition timing. It takes typically 4.0 msec to reach full magnitude of the oscillator waveform (see Figure 26, Oscillator Waveform, at Pin 8). A square waveform of 3.0 V peak with a period that is greater than the oscillator enable time is applied to the Enable (Pin 11). MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS Figure 24. ASK 320 MHz Application Circuit MC13176 On-Off Keying Encoded Carrier Envelope Figure 26. Oscillator Enable Time, Tenable Pin 8 Oscillator Waveform Figure 27. Power Output versus Modulation Current 10 5.0 0 - 5.0 VCC = 3.0 Vdc f = 320 MHz -10 -15 - 20 - 25 0.1 1.0 Imod, MODULATION CURRENT (mA) 10 Analog AM In analog AM applications, the output amplifier's linearity must be carefully considered. Figure 27 is a plot of Power Output versus Modulation Current at 320 MHz, 3.0 Vdc. In order to achieve a linear encoding of the modulating sinusoidal waveform on the carrier, the modulating signal must amplitude modulate the carrier in the linear portion of its power output response. When using a sinewave modulating signal, the signal rides on a positive DC offset called Vmod which sets a static (modulation off) modulation current, Imod. Imod controls the power output of the IC. As the modulating signal moves around this static bias point the modulating current varies causing power output to vary or to be AM modulated. When the IC is operated at modulation current levels greater than 2.0 mAdc the differential output stage starts to saturate. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13176 3.2-207 NOT RECOMMENDED FOR NEW DESIGNS Pin 16 OOK Input Modulation 10 kHz TTL Waveform PO, POWER OUTPUT (dBm) NOT RECOMMENDED FOR NEW DESIGNS Figure 25. ASK Input Waveform and Modulated Carrier In the design example, shown in Figure 28, the operating point is selected as a tradeoff between average power output and quality of the AM. For VCC = 3.0 Vdc; lCC = 18.5 mA and Imod = 0.5 mAdc and a static DC offset of 1.04 Vdc, the circuit shown in Figure 28 completes the design. Figures 29, 30 and 31 show the results of - 6.9 dBm output power and 100% modulation by the 10 kHz and 1.0 MHz modulating sinewave signals. The amplitude of the input signals is approximately 800 mVp-p. Where Rmod = (VCC - 1.04 Vdc)/0.5 mA = 3.92 k, use a standard value resistor of 3.9 k. Figure 28. Analog AM Transmitter 3.9k 1.04Vdc 560 VCC 16 R 3.0Vdc mod 0.8Vdc Data Input 800mVp-p + 6.8 Figure 29. Power Output of Unmodulated Carrier Figure 30. Input Signal and AM Modulated Carrier for fmod = 10 kHz MC13176 3.2-208 Figure 31. Input Signal and AM Modulated Carrier for fmod = 1.0 MHz MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS MC13176 MC13176 NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS Figure 32. Circuit Side View of MC13176D 4 4 Figure 33. Ground Side View 4 4 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13176 3.2-209 MC13176 Figure 35. Radial Leaded Components Placement (on Ground Side) MC13176 3.2-210 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS Figure 34. Surface Mounted Components Placement (on Circuit Side) MC13760 Product Preview GSM/DCS/TDMA/AMPS Multi-Protocol Transceiver The MC13760 Multi-Protocol, Multi-Band Digital Transceiver IC combines, on a single Advanced BiCMOS chip, the major building blocks required for next generation multi-purpose, multi-band wireless products. The device includes the majority of the circuitry necessary for IF signal processing between the RF front end and the DSP and backend. The MC13760 contains two fractional-N synthesizers, a re-configurable zero IF receiver with programmable bandwidth, receive A/D conversion, multi-rate data interface to the baseband DSP, direct launch digital modulator, full transmit support circuits, and general purpose support circuits such as D/A and A/D converters, battery save and tri-state control switches. Intended for use in a combined GSM/TDMA/AMPS/iDEN portable wireless phone product in the 800/900/1800/1900 MHz bands. The MC13760 can be used over a wide range of RF and IF frequencies. The main PLL prescaler input is usable to over 2.0 GHz and the IF quadrature downconverter operates up to 400 MHz. The MC13760 has separate receive IF inputs and a common zero-IF IQ receiver for TDMA and for GSM accommodating the receiver architectural need to use different IF frequencies and filters without the need for additional switches. * Receiver Functions for all GSM/DCS/TDMA IS-136/AMPS Modes and Frequencies Including GPRS * Direct Interface to Motorola Baseband Processors, such as the DSP56690 through a Common Programming and Data Interface * Main Three Accumulator (24-Bit) Fractional-N Synthesizer * Resolution Capability of 6.0 Hz * Dual-Mode Charge Pump Output for TDMA TX VCO and all RX * Independent Charge Pump Output for the GSM/DCS TX VCO * GMSK Lookup ROM for Direct Transmission in GSM/DCS Mode * Digital 16-Bit Automatic Frequency Control * * * * * * * * * MULTI-PROTOCOL TRANSCEIVER SEMICONDUCTOR TECHNICAL DATA PLASTIC PACKAGE CASE 1285 (BGA-104) ORDERING INFORMATION Device Operating Temperature Range Package MC13760 TA = -40 to 85C BGA-104 Secondary Three Accumulator (24-Bit) Fractional-N Synthesizer for use as an Accurate Frequency-Corrected Clock in GSM, or as an Additional Low Frequency LO Coarse Tuning of the VCO(s) via a 6-Bit D/A with Adapt Operates at 2.75 V Deep Sleep Mode with Current as low as 50 A Versatile Frequency Generation including Linear and Constant Envelope Modulation Paths, Ramp and Power Level Control, Direct Gain Control of the RFPA in the TDMA Mode D/A Conversion of TDMA TXI and TXQ Reference Crystal Oscillator with a Buffered Output, Compensation/Fine Tuning via 9-Bit D/A Receiver Gain Adjustment and Bandwidth Down to 6.0 kHz Programmed over the SPI Bus A/D Conversion of RXI and RXQ to 8-Bit or 10-Bit Resolution Types of Applications * GSM/DCS/TDMA/AMPS Global Roaming Multiband Cellular Telephone * VHF/UHF 2-Way or Trunked Radio, iDEN, Tetra, or Satellite Communication Radios or Telephones * Hand-Held Wireless PDA's * Wireless LAN's, Industrial Devices, ISM Band Products * Any New Device Containing Some Combination of the Above Functions MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13760 3.2-211 MC13760 AGC Control RFA0 On Channel AGC Det. On Channel AGC Det. AGC Warp I PREINI PREINIB SPI Control DCOCL Step Alternator Control PRAVCC1 VACBYP VAC AGC AGCGND AGCVCC BBEGND BBEVCC DCLICIN DCLICP DMKGND DMKVCC DMKGNDDIG DMKVCCDIG Figure 1. MC13760 Detailed Block Diagram 1 Pole 2 Pole 2 Pole NVCC 2 Pole Step Atten NGND PRAGND QVCC AGC Amp PRAVCC2 Q PREINGB PREING 1 Pole 2 Pole 2 Pole QGND 2 Pole Step Atten PRAGNDDIG LOIN +2 Quadrature Generator DCLQCP DCOCL Tracking Loop & BB Filter BW Control DCLQCIN S/H Adapt Timing S/H Addressable Shift Register SPII REFVCC SPICLK TCAPP CEX Internal Reference & Bias 8 REFGND 24 Programmable Divider 6 16 LSB Look-Up ROM Accumulator #2 2 Reference Oscillator MNCPGND TBD Order Passive Filter MNCPGND MAINVCC MAINGND AOCDRIVE 2 PtC Sw. Cap Filter TXE/TXKEY RXFS/SFS TSLOTB TCLK Cont. Time Filter Cont. Time Filter 24 TCLKB Clock Gen. 200 kHz 1.0, 2.4 or 2.6 MHz CLKGENIN OUTI OUTIB 8 6 Recombination Logic Accumulator #2 OUTQ OUTQB PtB +7/ +14/ +21/ +28 MUX From PtD 8X6 3 Bit 6 Bit 6 Bit Cosine D/A 6 Reg 6 Lookup 3 Counter 8 Bit 8 Bit Reg 8 Counter 8 8 5 Bit 5 Reg Programmable Divider Accumulator #3 3 Control Logic 8 400 KHz Reference Phase Detector/ +N Charge Pump 13.0 - 16.8 MHz or 26.0 - 33.6 MHz 2 +1/+2/ +3/+4 16 From PtD TEST1 PLLCP CLKOUT PLLEMIT PLLBASE Tark Circuit VBLIN 8 Bit D/A ASW VCNTO Mixer & Preamp Current 22 49 Test Multiplex (2 Outputs) PLLCPVCC REFPLLGND CLKSEL REFPLLVCC OSCENB DETSW SATDET Output Enable D or A IREF 5 From PtB TXKEYOUT SEGND SEBYP SFOUT SFVCC +1/ +2/ +3/ +4 3 MUX 6 5 SPICLK CEX From PtA SPI REG PtD MUX From PtA From TXE/ PtC TXKEY DMCS SPII Super Filter MC13760 3.2-212 Sw. Cap Filter RSTB TSLOT +65/ +84/ +130/ +168 +1/ +2 PtA CLKGENIN 5 Bit D/A TXCLK/SCK RXCLK Clock Generation & Control Logic Accumulator #1 +10/ +26 Wideb and Charge Pump 8 Bit D/A STD 62 62 IF Control Channel AFC 62 Addressable Shift Register CPGT 8 Bit D/A B16 D Q dk 4 Dual Mode Charge Pump 8 Bit D/A Addressable Shift Register ADAPT +13/ +17/ +26/ +34 26 MHz CPGITR Transmit Data Register RXACQ SPII SPICLK CEX LONCGND XTALEMIT SRD 4 SPI 9 Bit Control D/A Phase Detector Startup XTALBASE 26 MHz 4.333 MHz GPO3 OSCGND Receive Data Register 13.0 or 16.8 MHz IREF LONCVCC OSCVCC B6 2 Comb Filter GPO2 Third Order Passive Filter Accumulator #3 Comb Filter TX DATA Buffer Start DO Clk GPO1 XTALWARP SPI 6 Bit Control D/A SERIALGND 32 Recombination Logic TM VCOCT1 Adapt 10 Bit, or 8 Bit Cyclic A/D 3:1 Input Mux 24 AFC_SEL 24 Bit Adder 26 MHz VCOCT2 AGCI Battery Save Fine Channel Accumulator #1 PRSCIN DIG_AFC Enable TESTD CREF Battery Save TEST2 TCAPM SERIALVCC S/H Loop Filter MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA MC13760 Table 1. BGA Contact Identification BALL # BALL NAME DESCRIPTION SIGNAL TYPE A1 PRAGNDDIG Ground for the preamp substrate. Ground A2 PRAGND Ground for the preamp. Ground A3 PREINGB GSM IF preamp input. RF Input A4 PREINIB TDMA IF preamp input. RF Input A5 BBFGND Ground for the baseband filters. Ground A6 DCLQCP DC Offset Correction Loop (input) capacitor - Q channel Analog Input A7 CREF Bypass capacitor for the bandgap regulator. Analog A8 OUTQ TDMA Q channel analog transmit data. Analog Output A9 OUTIB TDMA I channel analog transmit data. Analog Output A10 TSLOTB TDMA low level transmit slot. Analog Output A11 TSLOT TDMA low level transmit slot. Analog Output B1 RFA0 RF attenuator 0 control line. (This line is a driver for an external RF attenuator.) Digital Output B2 DMXGND Ground for the mixer. Ground B3 PREING GSM IF preamp input. RF Input B4 PREINI TDMA IF preamp input. RF Input B5 PRAVCC2 Supply for the preamp output stage. Supply 2.775 V B6 DCLICP DC Offset Correction Loop (input) capacitor - I channel Analog Input B7 GPO3/test_so2 SPI port expansion 3. Or scan data output for MODROM module. Digital Output B8 TCAPP Differential reference capacitor. Analog B9 REFGND Ground for the internal reference. Ground B10 REFVCC Supply for the internal reference. Supply 2.775 V B11 TCLK TDMA low level transmit clock. Analog Output C1 DMXVCC Supply for the mixer. Supply 2.775 V C2 DMXGNDDIG Ground for the mixer substrate and quadrature generator. Ground C3 PRAVCC1 Supply for the preamp. Supply 2.775 V C4 BBFVCC Supply for the baseband filters. Supply 2.775 V C5 DCLICIN DC Offset Correction Loop (output) capacitor - TDMA - I channel Analog Output C6 DCLQCIN DC Offset Correction Loop (output) capacitor - TDMA - Q channel Analog Output C7 TCAPM Differential reference capacitor. Analog C8 OUTQB TDMA Q channel analog transmit data. Analog Output C9 CLKSEL Selects the source for the clock output to the digital circuitry of the radio as either the crystal reference/divided crystal reference or the Step Up PLL/divided Step Up PLL. A low on this pin selects the crystal reference/divided crystal reference. A high on this pin selects the Step Up PLL/divided Step Up PLL. Integrated weak pulldown. Digital Input C10 TCLKB TDMA low level transmit clock. Analog Output C11 QGND Quiet analog ground for the PA D/A and the data processing circuits. Ground D1 LOIN Input port for the second LO VCO signal. RF Input D2 DMXVCCDIG Supply for the quadrature generator. Supply 2.775 V D3 TEST2/EERQ Test input/MUX 2 output. (Various signals are buffered and MUX'd to this pin. Output signal is determined by programming of test bits.) Or with EER active, TDMA Q channel transmit data. Analog Test Point D4 TEST1/EERI Test input/MUX 1 output. (Various signals are buffered and MUX'd to this pin. Output signal is determined by programming of test bits.) Or with EER active, TDMA I channel transmit data. Analog Test Point D6 PKGGND1 Ground for the package flag (no direct connection to die). Pkg Ground D8 OUTI TDMA I channel analog transmit data. Analog Output D9 TESTD/GPO4 Digital test point. (Various digital signals are MUX'd to this pin. Output is determined by programming of test bits.) Or SPI port expansion 4. Digital Test Point Digital Output MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13760 3.2-213 AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA MC13760 Table 1. BGA Contact Identification (continued) BALL # BALL NAME DESCRIPTION SIGNAL TYPE D10 QVCC Quiet analog supply for the PA D/A and the data processing circuits. Supply 2.775 V D11 NGND Noisy analog ground for the VCO D/A, AOC D/A and the data processing circuits. Ground E1 VAG Analog ground. Analog E2 AGCGND Ground for the AGC. Ground E3 VAGBYP Bypass capacitor for the analog ground voltage. Analog E9 NVCC Noisy analog supply for the VCO D/A, AOC D/A and the data processing circuits. Supply 2.775 V E10 RSTB Reset. Low true input. Integrated weak pullup. Digital Input E11 TM Enable for the internal scan test. Digital Input F1 AGCVCC Supply for the AGC. Supply 2.775 V F2 TXKEYOUT/test_so4 Conditioned TXKEY out. Or scan data output for reference clock module. Digital Output F3 AGC Capacitor for the TDMA AGC. Analog F4 PKGGND2 Ground for the package flag (no direct connection to die). Pkg Ground F8 PKGGND3 Ground for the package flag (no direct connection to die). Pkg Ground F9 PLLCPVCC Supply for the Step Up PLL phase detector and charge pump. Supply 5.0 V F10 CLKOUT Clock output to the digital circuitry of the radio. Ranges are 13.0 to 16.8 MHz, or 26.0 to 33.6 MHz. The actual frequency provided will depend upon the configuration of the Step Up PLL and the SPI selected configuration of the MC13760. Analog Output F11 PLLCP Charge pump output for the Step Up PLL. Analog Output G1 PRSCIN Main LO prescaler input. RF Input G2 MAINGND Ground for the main prescaler and divider. Ground G3 AOCDRIVE Output to the PA bias circuitry drive input. (Output drive impedance is 620 Ohms.) Analog Output G9 PLLEMIT Emitter of the oscillator transistor for the Step Up PLL. RF Output G10 REFPLLVCC Supply for the Step Up PLL VCO and dividers. Supply 2.775 V G11 PLLBASE/vco_clk Base of the oscillator transistor for the Step Up PLL. Or scan clock input for VCO clock zone. RF Input H1 SATDET/test_si4 Input indicating saturation. Or scan data input for reference clock module. Digital Input H2 GPO2/test_so8 SPI port expansion 2. Or Main PLL Adapt Timer output. Or scan data output for SSI module. Digital Output H3 MAINVCC Supply for the main prescaler and divider. Supply 2.775 V H4 MNCPVCC Supply for the main phase detector and charge pump. Supply 5.0 V H6 PKGGND4 Ground for the package flag (no direct connection to die). Pkg Ground H8 TXE/TXKEY/test_si8 Transmit slot enable in TDMA mode; digital input to start/stop the PA Control sequence in GSM mode. Or scan data input for SSI module. Digital Input H9 RXACQ/test_si7 Serial bus enable. Or scan data input for 5 bit and 8 bit xtal clock dividers. Digital Input H10 REFPLLGND Ground for the Step Up PLL. Ground H11 SERIALVCC Supply for the SSI and SPI serial communication ports. Supply 1.8 -- 2.775V J1 GPO1/test_so1 SPI port expansion 1. Or Coarse Tune Adapt Timer output. Or scan data output for main Frac-N. Digital Output J2 VCOCT2 High current (ADAPT) output of the 6 bit main RX VCO Coarse Tune D/A. Analog Output J3 DETSW/test_si1 Output to the PA control circuitry power range input (open drain). Or scan data input for main Frac-N. Analog Output J4 SFVCC Supply for the super filter. Supply 2.775 V J5 ASW/sc_inp1 TDMA antenna switch control input. Or scan data input for reference clock Frac-N accumulator module. Digital Input MC13760 3.2-214 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA AAAA AAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAA MC13760 Table 1. BGA Contact Identification (continued) BALL # BALL NAME DESCRIPTION SIGNAL TYPE J6 VCNTO TDMA RFPA gain control voltage output. Analog Output J7 OSCVCC Supply for the crystal oscillator. Supply 2.775 V J8 XTALWARP Output of the 9 bit WARP D/A to be used for compensation/correction of the reference crystal frequency. Analog Output J9 OSCENB Digital input used to control the crystal oscillator circuit. A logic low selects the internal oscillator. Integrated weak pulldown. Digital Input J10 RXCLK/test_so3 SSI RX clock in GSM mode; not used in TDMA mode. Or scan data output for transmit power amp control module. Digital Output J11 SRD/test_so6 SSI receive data. Or scan data output for Adapt Generator module. Digital Output K1 VCOCT1 Low current output of the 6 bit main RX VCO Coarse Tune D/A. Analog Output K2 MNCPGND Ground for the main phase detector and charge pump. Ground K3 SFGND Ground for the super filter. Ground K4 SFBYP Bypass capacitor for the super filter. (1.0 f) Analog K5 OSCGND Ground for the crystal oscillator. Ground K6 XTALBASE/sc_clk26 Crystal oscillator base. Or scan clock input for xtal clock zone. RF Input K7 LOGICVCC Supply for the main synthesizer logic, adapt control and test MUXs. Supply 2.775 V K8 CEX Digital input that latches in the SPI data. (Low Active) Digital Input K9 SPICLK SPI clock input. Digital Input K10 STD/test_si3 SSI transmit data. Or scan data input for transmit. Digital Input K11 TXCLK/SCK/test_so5 Bit clock for TX data transfer in GSM mode. Bit clock for RX and TX data transfer in TDMA mode. Or scan data output for reference clock Frac-N accumulator module. Digital Output L1 ADAPT Synthesizer output to adapt the loop filter for the main PLL. Analog Output L2 CPGT Charge pump output for the main TX LO (GSM). Analog Output L3 CPGITR Charge pump output for the main RX LO (GSM, TDMA TX and RX). Analog Output L4 SFOUT Super filter output. (45 mA max) (bypass with 0.01 f) Analog Output L5 VBLIN TDMA RFPA bias control voltage output. Analog Output L6 XTALEMIT Crystal oscillator emitter. RF Output L7 LOGICGND Ground for the main synthesizer logic, adapt control and test MUXs. Ground L8 SERIALGND Ground for the SSI and SPI serial communication ports. Ground L9 SPII SPI data input. Digital Input L10 DMCS/test_si2 Digital input that starts the GSM TX modulation. Or scan data input for MODROM module. Digital Input L11 RXFS/SFS/test_so7 RX SSI frame sync in GSM mode; SSI frame sync in TDMA mode. Or scan data output for 5 bit and 8 bit xtal clock dividers. Digital Output MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC13760 3.2-215 MC33411A/B 900 MHz Analog Cordless Phone Baseband with Compander The MC33411 900 MHz Analog Cordless Phone Baseband system is designed to fit the requirements of a 900 MHz analog cordless telephone system. Included are three PLLs (Phase-Locked Loops). Two are intended for use with external VCOs and 64/65 or 128/129 dual modulus prescalers, and can control the transmit and receive (LO1) frequencies for 900 MHz communication. The third PLL is configured as the 2nd local oscillator (LO2), and is functional to 80 MHz. Also included are muting, audio gain adjust (internal and external), low battery/carrier detect, and a wide range for the PLL reference frequency. The power supply range is 2.7 to 5.5 V. "A" version devices have programmable MCU clock out and reference oscillator disable functions, whereas these functions are always enabled for "B" version devices. * * * * * * * * * * * * 900 MHz ANALOG CORDLESS PHONE BASEBAND WITH COMPANDER SEMICONDUCTOR TECHNICAL DATA Complete Expander/Compressor for Superior Noise Rejection 48 1 Two PLLs and a LO Suitable for a 900 MHz System Minimal External Components Transmit Path Includes Adjustable Gain Amplifier, Filters, Mute, Compressor with Bypass and Limiter Receive Path Contains Data Slicer, Adjustable Gain Amplifier, Sidetone Attenuator, Filters, Expander with Bypass, Mute, Volume Control and Power Amplifier Dual A/Ds are Provided to Monitor RSSI and VCC Independent Power Amplifier with Differential Outputs and Mute FTA SUFFIX PLASTIC PACKAGE CASE 932 (LQFP-48) ORDERING INFORMATION Device Selectable Frequency for Switched Capacitor Filters, PLLs and the LO MC33411AFTA Reference Frequency Source can be a Crystal or System Clock MC33411BFTA Operating Temperature Package TA = -20 to 70C LQFP-48 Serial P Port to Control Gain, Mute, Frequency Selection, Phase Detector Gain, Power Down Modes, Low Battery Detect and Others Power Supply Range: 2.7 to 5.5 V Power Down Modes for Power Conservation Simplified Block Diagram DS In VCC RSSI Tx In Rx Out Data Slicer DS Out Dual A/D Amp/Mute Compressor Filter Gain Adj Tx Out Filter Sidetone Attn Mute Expander Power Amp Audio In MCU Clock Clock Enable Data MCU Interface Programmable Counters PLL #1 PLL #2 2nd LO Tank LO2 Out This device contains 11,108 active transistors. MC33411A/B 3.2-216 LPF+ VCO + Prescaler LPF+ VCO + Prescaler LPF MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC33411A/B Figure 1. Test Circuit VCC 1.0 1.0 1.0 1.0 0.1 130 4.99 k 4.99 k VCC Tx Audio 1.0 0.47 Rx E In Out 36 Ecap 35 E Out 33 34 Gnd PA PAO- PAI 32 31 30 VCC PA PAO+ 28 29 4.7 VB 27 47.5 k 0.1 VAG MCI 26 25 47.5 k Rx Mute 1.0 k RSSI In 1.0 Vol Ctl Expander 37 Mic Amp Power Amp Power Amp Mute Exp PT 24 Comp PT Rx Audio In 38 1.0 DS In VCC Attn AALPF Gnd Audio 39 40 49.9 LO2 Out VCC LO2 VCC 1.0 0.001 LO2+ VCC 6b A/D Converter VCC Audio 41 SPI LO2 Ctl LO2- 20 LO2PD LO2 Gnd VCC VCC Audio 10 0.1 C In 1.0 VCC Ccap 0.47 1.0 C Out 1.0 19 42 Lim In Tx Gain Adj 18 43 Limiter 2nd LO VCO 44 47 48 SPI 16 14b Ctr Divide By 2 SCF Clk 46 LO2 Phase Detect 13b N' 15 14 Mod Ctl 1 13b N Rx Phase Detect 2 3 FRx MC FRx 4 PLL VCC VCC 0.01 RF In 0.001 5 Rx PD 7b A 6 PLL Gnd 7 Tx PD MCU Clk Ctr MCU Interface Mod Ctl Tx Phase Detect 8 PLL VCC 9 FTx 1.0 10 k DS Out Fref Out 0.1 6b SCF Clk Ctr 12b Ref Ctr 7b A' Tx Out Tx Mute LPF 17 Inverter 45 100 p LO2 Gnd 21 Low Max Gain Side Tone Attn SPI Data Slicer 5.6 p 22 SPI 0.1 5.62 k Compressor SPI RSSI 6b A/D Converter BG Vref 23 ALC Rx Gain Adj LPF MCO VB 10 FTx MC EN 11 CLK Fref In Gnd Digital 13 MCU Clk Out SPI 12 Data VCC 1.0 1.0 0.001 49.9 0.01 RF In MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 49.9 MC33411A/B 3.2-217 MC33411A/B MAXIMUM RATINGS Symbol Value Unit Power Supply Voltage Rating VCC -0.5 to 6.0 V Junction Temperature TJ -6.5 to 150 C Maximum Power Dissipation PD 150 mW NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Recommended Operating Conditions, Electrical Characteristics tables or Pin Descriptions section. 2. Meets Human Body Model (HBM) 2000 V and Machine Model (MM) 200 V. ESD data available upon request. RECOMMENDED OPERATING CONDITIONS Characteristic Symbol Supply Voltage Min Typ Max Unit VCC 2.7 3.6 5.5 Vdc Operating Ambient Temperature TA -20 - 70 C Input Voltage Low (Data, CLK, EN) Vil - - 0.3 V Input Voltage High (Data, CLK, EN) Vih Tx PLL VCC - 0.3 - - V Frange 4.0 - 18.25 MHz VB - 1.5 - V Frequency Range (Fref in) Bandgap Reference Voltage DC ELECTRICAL CHARACTERISTICS (VCC = 3.6 V, TA = 25C, unless otherwise noted.) Characteristic Static Current Active Mode (R5/8 to 0 = 0; R6/7 = 0) Receive Mode (R5/8, 7, 3, 2, 0 = 0; R6/7 = 0; R5/6,5,4,1 = 1) Standby Mode (R5/0 = 0; R6/7 = 0; R5/8 to 1 = 1) Inactive Mode, A only (R5/8 to 0 =1; R6/7 = 1) Data Slicer Only RSSI/Batt A/D Only Tx Audio Only Rx Audio Only PA Only 2nd LO/Fref Only Rx PLL/Fref Only Tx PLL/Fref Only Ref Osc Only, "A" version only Symbol Min Typ Max Unit ACT ICC Rx ICC STD ICC INA ICC DS ICC AD ICC TxA ICC RxA ICC PA ICC 2LO ICC RxPLL ICC TxPLL ICC ROSC ICC - - - - - - - - - - - - - 15 10 500 10 100 70 1.4 1.4 1.0 6.0 1.0 1.0 500 20 13 1500 15 - - - - - - - - - mA mA A A A A mA mA mA mA mA mA A VB 1.38 1.5 1.62 V Reference Voltage, Unadjusted ELECTRICAL CHARACTERISTICS (VCC = 3.6 V, VB = 1.5 V, TA = 25C, Active Mode, Rx Gain = 01111, Vol Adj = 0111, fin = 1.0 kHz, unless otherwise noted.) Characteristics Input Pin Measure Pin Symbol Min Typ Max Unit Rx Audio In E Out G -4.0 0 4.0 dB E In E Out Gt Rx AUDIO PATH Absolute Gain (Vin = -20 dBV) Gain Tracking (Referenced to Eout for Vin = -20 dBV) Vin = -30 dBV Vin = -40 dBV Total Harmonic Distortion (Vin = -20 dBV) Rx Audio In Maximum Input Voltage (VCC = 2.7 V) Rx Audio In Maximum Output Voltage (Increase input voltage until output voltage THD = 5%, then measure output voltage) E In PAO- E Out THD VOmax dB -21 -42 -20 -40 -19 -38 - 0.7 1.0 % - -11.5 - dBV -2.0 0 - dBV NOTES: 1. Values specified are pure numbers to the base 10. 2. Typical performance parameters indicate the potential of the device under ideal operating conditions. MC33411A/B 3.2-218 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC33411A/B ELECTRICAL CHARACTERISTICS (continued) (VCC = 3.6 V, VB = 1.5 V, TA = 25C, Active Mode, Rx Gain = 01111, Vol Adj = 0111, fin = 1.0 kHz, unless otherwise noted.) Characteristics Input Pin Measure Pin Symbol Min Typ Max - - 600 7.5 - - Unit Rx AUDIO PATH (continued) Input Impedance Zin RxAudio In E In k Attack Time Ecap = 0.5 F, Rfilt = 40 k E In E Out ta - 3.0 - mS Release Time Ecap = 0.5 F, Rfilt = 40 k E In E Out tr - 13.5 - mS Compressor to Expander Crosstalk (Vin = -10 dBV, VE In = AC Gnd) MCI E Out CT - -90 -60 dB Rx Muting (Vin = -20 dBV, Rx Gain Adj = 01111) Rx Audio In E Out Me - -84 -60 dB Rx High Frequency Corner (Vin = -20 dBV) SCF Counter = 31d Rx Audio In Rx Out Rx fch 3.6 3.8 4.0 kHz Low Pass Filter Passband Ripple (Vin = -20 dBV) Rx Audio In Rx Out Ripple - 0.4 0.6 dB Rx Gain Adjust Range Rx Audio In Rx Out Rx Range - -9.0 to 10 - dB Rx Gain Adjust Steps Rx Audio In Rx Out Rx n - 20 - Audio Path Noise, C-Message Weighting (Vin = AC Gnd) Rx Audio In EN Rx Out E Out PA Out Volume Control Adjust Range Volume Control Levels Side Tone Attenuate Selections dBV - - - -85 <-95 <-95 - - - Rx Audio In E Out VCtlRange - -14 to 16 - E In E Out Vcn - 16 - Rx Audio In Rx Out STAn - 4 - E Out STA - - - - 0.0 1.5 3.0 5.2 - - - - - -3.0 - dB Side Tone Attenuate (Referenced to E In) Selection = 00 Selection = 01 Selection = 10 Selection = 11 Side Tone Attenuate Threshold (C Out/E In) STAthr dB dB POWER AMP/MUTE (VCC = 3.6 V, VB = 1.5 V, TA = 25C, Active Mode, fin = 1.0 kHz) Output Swing, 5.0 mA load (VPAO+ @ -5.0 mA - VPAO+@ 5.0 mA) PAI PAO+ VOmax 1.3 2.4 - Vpp Output Swing, 5.0 mA load (VPAO- @ -5.0 mA - VPAO-@ 5.0 mA) PAI PAO- VOmax 1.3 2.4 - Vpp Output Swing, No Load PAI PAO+ VOmax - 2.7 - Vpp Output Swing, No Load PAI PAO- VOmax - 2.7 - Vpp PAO-, PAO+ IOmax - 5.0 - mA PAO- Msp - -92 -60 dB MCO AVOL - 100.000 - V/V Maximum Output Current Power Amp Mute (Vin = -20 dBV, RL = 130 ) PAI MIC AMP (VCC = 3.6 V, TA = 25C, Active Mode, fin = 1.0 kHz) Open Loop Gain MCI Gain Bandwidth MCI MCO GBW - 100 - kHz Maximum Output Swing (RL = 10 k) MCI MCO VOmax - 3.2 - Vpp NOTES: 1. Values specified are pure numbers to the base 10. 2. Typical performance parameters indicate the potential of the device under ideal operating conditions. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC33411A/B 3.2-219 MC33411A/B ELECTRICAL CHARACTERISTICS (continued) (VCC = 3.6 V, VB = 1.5 V, TA = 25C, Active Mode, Rx Gain = 01111, Vol Adj = 0111, fin = 1.0 kHz, unless otherwise noted.) Characteristics Input Pin Measure Pin Symbol Min Typ Tx AUDIO PATH (VCC = 3.6 V, Limiter, Mutes, ALC disabled, TA = 25C, Gain = 1, Active Mode, fin = 1.0 kHz) Absolute Gain (Vin = -10 dBV) MCI TX Out G -4.0 0 Gain Tracking (Referenced to Tx Out for Vin = -10 dBV) Vin = -30 dBV Vin = -40 dBV MCI Total Harmonic Distortion (Vin = -10 dBV) MCI Tx Out Maximum Output Voltage (Increase input voltage until output voltage THD = 5%, then measure output voltage. Tx Gain Adj = 8.0 dB) MCI Input Impedance Tx Out Max Unit 4.0 dB Gt dB -11 -17 -10 -15 -9.0 -13 THD - 0.5 1.2 % Tx Out VOmax -8.0 -5.0 - dBV C In Zin - 10 - k Attack Time Ccap = 0.5 F, Rfilt = 40 k C In Tx Out ta - 3.0 - mS Release Time Ccap = 0.5 F, Rfilt = 40 k C In Tx Out tr - 13.5 - mS Expander to Compressor Crosstalk (Vin = -20 dBV, PA no load, VCin = AC Gnd) E In Tx Out CT - -60 -40 dB Tx Muting (Vin = -10 dBV) MCI Tx Out Mc - -88 -60 dB ALC Output Level (When Enabled) Vin = -10 dBV Vin = -2.5 dBV MCI Tx Out ALCout -15 -13 -13 -11 -8.0 -6.0 ALC Slope (When Enabled) Vin = -10 dBV Vin = -2.5 dBV MCI Tx Out Slope 0.1 0.25 0.4 dB/dB ALC Input Dynamic Range C In Tx Out DR - -16 to -2.5 - dBV Limiter Output Level (When Enabled, Vin = -2.5 dBV) Lim In Tx Out Vlim -10 -7.0 - dBV Tx High Frequency Corner (Vin = -10 dBV, Unity Gain) SCF Counter = 31d Lim In Tx Out Tx fch 3.45 3.65 3.85 kHz Low Pass Filter Passband Ripple (Vin = -10 dBV) Lim In Tx Out Ripple - 0.4 1.0 dB MCU Clock or SCF Spurs (Vin = -10 dBv, relative to SCF or MCU Fundamental) Lim In Tx Out - - -25 - dBc MCI Tx Out AVmax - - 21 12 - - Maximum Compressor Gain (Vin = -70 dBV) R6/8 = 0 R6/8 = 1 dBV dB Tx Gain Adjust Range Lim In Tx Out Tx Range - -9.0 to 10 - Tx Gain Adjust Steps Lim In Tx Out Tx N - 20 - dB DATA AMP COMPARATOR (VCC = 3.6 V, VB = 1.5 V, TA = 25C, Active or Receive Mode) Hysteresis DS In DS Out Hys 20 42 60 mV Threshold Voltage DS In DS Out VT - VCC - 0.7 - V DS In Zin 200 250 280 k DS Out Zout - 100 - k Input Impedance Output Impedance Output High Voltage (Vin = VCC - 1.0 V, Ioh = 0 mA) DS In DS Out Voh VCC Audio - 0.1 VCC Audio - V Output Low Voltage (Vin = VCC - 0.4 V, Iol = 0 mA) DS In DS Out Vol - 0.1 0.4 V Maximum Frequency DS In DS Out Fmax - 10 - kHz NOTES: 1. Values specified are pure numbers to the base 10. 2. Typical performance parameters indicate the potential of the device under ideal operating conditions. MC33411A/B 3.2-220 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC33411A/B ELECTRICAL CHARACTERISTICS (continued) (VCC = 3.6 V, VB = 1.5 V, TA = 25C, Active Mode, Rx Gain = 01111, Vol Adj = 0111, fin = 1.0 kHz, unless otherwise noted.) Characteristics Input Pin Measure Pin Symbol Min Typ Max Unit RSSI/LOW BATTERY A/D (VCC = 3.6 V, VB = 1.5 V, TA = 25C, Active or Receive Mode) RSSI Voltage Range RSSI In SPI RSSI Range V Minimum (R5/17-12 = 0) Interim (R5/17-12 = 100000) Maximum (R5/17-12 = 1) Low Battery Detect Operating Range - .744 - VCC Audio SPI 0 - 1.6 - .792 - LOWB Range V Minimum Interim (R5/23-18 = 101111) Maximum (R5/23-18 = 1) - 2.7 - 2.7 - 3.75 - 3.1 - Differential Non-linearity RSSI In/ VCC Audio SPI A/D DNL -1.0 0.5 1.0 LSB Resolution RSSI In/ VCC Audio SPI Resolution - 6 - Bits RSSI In Iin -80 20 80 nA Input Current REFERENCE FREQUENCY (VCC = 3.6 V, VB = 1.5 V, TA = 25C, Active Mode) Input Current High (Vin = VCC) Fref in Iih 2.0 5.0 15 A Input Current Low (Vin = 0 V) Fref in Iil -15 -5.0 -2.0 A Fref out Vin 300 - - mVpp - Minimum Input Voltage Fref In Fref in Input Impedance Output Impedance Fref in Zin - 2.9 pF||11.6 k Fref out Zout - 2.5 pF||4.5 k - MICROPROCESSOR INTERFACE (VCC = 3.6 V, VB = 1.5 V, TA = 25C, Active or Receive Mode) Input Low Voltage Data/EN /CLK Vil 0 - 0.3 V Input High Voltage Data/EN /CLK Vih Tx PLL VCC - 0.3 - Tx PLL VCC V Input Current Low (Vin = 0.3 V, Standby Mode) Data, EN, CLK Data, EN, CLK Iil -5.0 0.4 - A Input Current High (Vin = 3.3 V, Standby Mode) Data, EN, CLK Data, EN, CLK Iih - 1.6 5.0 A Hysteresis Voltage Data, EN, CLK Data, EN, CLK Vhys - 1.0 - V Fmax 2.0 - - MHz Data, CLK, EN Cin - 8.0 - pF EN, CLK tsuEC - 200 - nS Data to CLK Setup Time Data, CLK tsuDC - 100 - nS Hold Time Data, CLK th - 90 - nS Recovery Time EN, CLK trec - 90 - nS Input Pulse Width EN, CLK tw - 100 - nS tpuMCU - 100 - S Voh Tx PLL VCC - 0.3 3.5 - V Maximum Clock Frequency Input Capacitance Data, EN, CLK EN to CLK Setup Time CLK MCU Interface Power-Up Delay Output High Voltage (Ioh = 0 mA) MCU Clk Out NOTES: 1. Values specified are pure numbers to the base 10. 2. Typical performance parameters indicate the potential of the device under ideal operating conditions. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC33411A/B 3.2-221 MC33411A/B ELECTRICAL CHARACTERISTICS (continued) (VCC = 3.6 V, VB = 1.5 V, TA = 25C, Active Mode, Rx Gain = 01111, Vol Adj = 0111, fin = 1.0 kHz, unless otherwise noted.) Characteristics Input Pin Measure Pin Symbol Min Typ Max Unit MICROPROCESSOR INTERFACE (VCC = 3.6 V, VB = 1.5 V, TA = 25C, Active or Receive Mode) Output Low Voltage (Iol = 0 mA) MCU Clk Out Vol - 0.1 0.3 V Output High Voltage (Ioh = 0 mA) Data Voh Tx PLL VCC - 0.3 3.5 - V Output Low Voltage (Iol = 0 mA) Data Vol - 0.1 0.3 V Rx/Tx PLL CHARACTERISTICS (VCC = 3.6 V, VB = 1.5 V, TA = 25C, Active or Receive Mode) Output Source Current (VPD = 0.5 V or VCC - 0.5 V) 100 A mode 400 A mode Rx PD & Tx PD Output Sink Current (VPD = 0.5 V or VCC - 0.5 V) 100 A mode 400 A mode Rx PD & Tx PD A Ioh -130 -520 -100 -400 -70 -280 70 280 100 400 130 520 A Iol Current Match, 100 A mode or 400 A mode, VPD = VCC / 2 (i.e., 100 x (ABS (Ioh / Iol ))) Rx PD Tx PD Match 80 100 125 % Output Off Current (VPD = VCC /2),100 A mode or 400 A mode Rx PD Tx PD Ioz -80 5.0 80 nA Input Current Low (Vin = 0 V) FRx FTx Iil -10 -7.5 - A Input Current High (Vin = VCC) FRx FTx Iih - 10 14 A Input Bias Voltage FRx FTx Vbias - 1.5 - V Output Voltage High (Ioh = 0 mA, Voltage Mode) FRxMC Voh - Rx PLL VCC - 0.1 - V Output Voltage High (Ioh = 0 mA, Voltage Mode) FTxMC Voh - Tx PLL VCC - 0.1 - V Output Voltage Low (Iol = 0 mA, Voltage Mode) FRxMC FTxMC Vol - 0.1 - V Output Current High (Voh = 0.8 V, Current Mode) FRxMC FTxMC Ioh -130 -100 -70 A Output Current Low (Vol = 0.8 V, Current Mode) FRxMC FTxMC Iol 70 100 130 A Maximum Input Frequency FRx FTx Fmax 20 - - MHz Input Voltage Swing FRx FTx Vin 200 - 1200 mVpp FRxMC FTxMC - - 20 - nS Modulus Control Prop Delay FRx FTx LO2 PLL CHARACTERISTICS (VCC = 3.6 V, VB = 1.5 V, TA = 25C, Active Mode) Output Source Current (VPD = 0.5 V or VCC - 0.5 V) 100 A mode 400 A mode LO2PD Output Sink Current (VPD = 0.5 V or VCC - 0.5 V) 100 A mode 400 A mode LO2PD Current Match, 100 A mode or 400 A mode, VPD = VCC / 2 (i.e., 100 x (ABS (Ioh / Iol ))) LO2PD A Ioh -130 -520 -100 -400 -70 -280 70 280 100 400 130 520 80 100 125 A Iol Match % NOTES: 1. Values specified are pure numbers to the base 10. 2. Typical performance parameters indicate the potential of the device under ideal operating conditions. MC33411A/B 3.2-222 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC33411A/B ELECTRICAL CHARACTERISTICS (continued) (VCC = 3.6 V, VB = 1.5 V, TA = 25C, Active Mode, Rx Gain = 01111, Vol Adj = 0111, fin = 1.0 kHz, unless otherwise noted.) Input Pin Characteristics Measure Pin Symbol Min Typ Max Unit LO2 PLL CHARACTERISTICS (VCC = 3.6 V, VB = 1.5 V, TA = 25C, Active Mode) Output Off Current (VPD = VCC /2) LO2PD Ioz -80 5.0 80 nA Input Current Low (Vin = 0.5 V) LO2Ctl Iil -1.0 -0.02 - A Input Current High (Vin = VCC - 0.5 V) LO2Ctl Iih - 0.02 1.0 A Input Voltage Range LO2Ctl Vrange 0.4 - VCC V 65 80 - MHz 112 180 245 mVpp 12-Bit Reference Counter Range [Note 1] - 3 to 4095 - 13-Bit N Counter Range [Note 1] - 3 to 8191 - 7-Bit A Counter Range [Note 1] 64/65 Modulus Prescaler 128/129 Modulus Prescaler - - 0 to 63 0 to 127 - - 14-Bit LO2 Counter Range [Note 1] - 12 to 16383 - 6-Bit Counters (for SCF) [Note 1] - 3 to 63 - Maximum 2nd LO Frequency LO2 Out Drive (25 load) Vout COUNTERS (VCC = 3.6 V, VB = 1.5 V, TA = 25C, Active Mode) NOTES: 1. Values specified are pure numbers to the base 10. 2. Typical performance parameters indicate the potential of the device under ideal operating conditions. AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA PIN FUNCTION DESCRIPTION Pin Symbol/Type 1 FRx MC (Output) Description Description Modulus Control Output for the Rx PLL section. Can be set to output in current mode or voltage mode, selectable with bit 3/16. Rx PLL VCC 100 A Current Mode 1 FRx MC Rx PLL VCC 100 A Voltage Mode 2 FRx (Input) Receives the signal from the external 64/65 or 128/129 prescaler. DC bias is at 1.3 V. PLL VCC 2 200 k Bias FRx 80 A NOTE: 1. All VCC pins must be within 0.5 V of each other. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC33411A/B 3.2-223 AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA MC33411A/B PIN FUNCTION DESCRIPTION (continued) Pin Symbol/Type 3 Rx PLL VCC (Input) Description 10 3 Description 0.01 10 VCC Rx PLL Section 4 Rx PD (Output) Rx PLL VCC 100/ 400 A 125 4 to Filter Rx PD Rx PLL VCC Supply pin for the Rx PLL section. Allowable range is 2.7 to 5.5 V and must be within 0.5 V of all other VCC pins. Good bypassing is required and isolation with a 10 resistor is recommended. Rx Phase Detector Output. The output either sources or sinks current, or neither, depending on the phase difference of the phase detector input signals. During lock, very narrow pulses with a frequency equal to the PLL reference frequency are present. Output current is either 100 A or 400 A, selectable with bit 2/20. 125 100/ 400 A 5 PLL Gnd 6 Tx PD (Output) 7 Tx PLL VCC (Input) Ground pin for the PLL section. A direct connection to a ground plane is strongly recommended. Same as Pin 4, except powered from Tx PLL VCC. 10 7 0.01 10 VCC Tx PLL Section, MCU Serial Interface, Reference Oscillator 8 FTx (Input) 9 FTx MC (Output) Same as Pin 2. Tx Phase Detector Output. Description same as for Pin 4, except bit 1/20 controls the current level. Supply pin for the Tx PLL section, MCU Serial Interface, MCU Clock Counter, and the Reference Oscillator. Allowable range is 2.7 to 5.5 V and must be within 0.5 V of all other VCC pins. Good bypassing is required and isolation with a 10 resistor is recommended. Receives the signal from the external 64/65 or 128/129 prescaler. DC bias is at 1.5 V. Modulus Control Output for the Tx PLL section. Can be set to output in a current mode or a voltage mode, selectable with bit 3/16. Tx PLL VCC 100 A Current Mode 9 FTx MC Tx PLL VCC 100 A Voltage Mode NOTE: 1. All VCC pins must be within 0.5 V of each other. MC33411A/B 3.2-224 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA MC33411A/B PIN FUNCTION DESCRIPTION (continued) Pin Symbol/Type 10 EN (Input) Description Tx PLL VCC 10 Enable 11 CLK (Input) 12 Data (I/O) Description Enable Input for the MCU Interface section. Hysteresis threshold is within 0.5 V of ground and VCC. See text for proper waveform required at this pin. 240 1.0 A Same as Pin 10. Clock Input for the MCU Interface section. Hysteresis threshold is within 0.5 V of ground and VCC. Data is written or read out on clock's rising edge. Maximum clock rate is 2.0 MHz. Data I/O line for the MCU Interface section. Both address and data are provided to/from this pin. Input threshold is within 0.5 V of ground and VCC. Data is written or read out on clock's rising edge. Tx PLL VCC 12 Data 240 1.0 A Tx PLL VCC Disable Data 13 MCU Clk Out (Output) Tx PLL VCC Tx PLL VCC 1.0 k 13 Clk Out The microprocessor clock output is derived from the reference oscillator and a programmable divider with divide ratios of 2 to 312.5. It can be used to drive a microprocessor and thereby reduce the number of crystals required in the system design. The driver has an internal resistor in series with the output which can be combined with an external capacitor to form a low-pass filter to reduce radiated noise on the PCB. This output also functions as the output for the counter test modes. 1) For the MC33411A the Clk Out can be disabled via the MCU interface. 2) For the MC33411B this output is always active (on). 14 NOTE: Gnd Digital Ground for the Data, MCU Clk Out, and Fref Out digital Outputs. A direct connection to the ground plane is strongly recommended. 1. All VCC pins must be within 0.5 V of each other. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC33411A/B 3.2-225 AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA MC33411A/B PIN FUNCTION DESCRIPTION (continued) Pin Symbol/Type 15, 16 Fref In, Fref Out Description Description Tx PLL VCC Fref Out 100 16 1) For the MC33411A the Fref Out can be disabled via the MCU interface. 2) For the MC33411B this output is always active (on). Tx PLL VCC 15 100 Fref In Disable 17 Reference Frequency Input for various portions of the circuit, including the PLLs, SCF clock, etc. A crystal (4 to 18.25 MHz) may be connected as shown, or an external frequency source may be capacitor coupled to Pin 15. See text for crystal requirements. DS Out (Output) VCC Audio Data Slicer Output (open collector with internal 100 k pull-up resistor). VCC Audio 100 k 17 DS Out 18 Tx Out (Output) 20 C Out (Output) 19 18, 20 Tx Out is the Tx path audio output. Internally this pin has a low-pass filter circuitry with -3.0 dB bandwidth of 4.0 kHz. Tx gain and mute are programmable through the MCU interface. This pin is sensitive to load capacitance. Tx Out, T O C Out C Out is the compressor output. VCC Audio VB Lim In (Input) Lim In is the limiter input. This pin is internally biased and has an input impedance of 400 k. Lim In must be ac-coupled. VCC Audio 400 k 19 Lim In VB 21 Ccap VCC Audio VCC Audio 40 k Ccap is the compressor rectifier filter capacitor pin. It is recommended that an external filter capacitor to VCC audio be used. A practical capacitor range is 0.1 to 1.0 F. The recommended value is 0.47 F. 21 Ccap NOTE: 1. All VCC pins must be within 0.5 V of each other. MC33411A/B 3.2-226 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA MC33411A/B PIN FUNCTION DESCRIPTION (continued) Pin Symbol/Type 22 C In (Input) Description Description C In is the compressor input. This pin is internally biased and has an input impedance of 12.5 k. C In must be ac-coupled. VCC Audio 12.5 k 22 C In VB 23 VCC Audio (Input) 23 10 0.01 Audio Section, Filters, A/D Converters, Data Slicer 24 MCO (Output) Supply input for the audio section, filters, A/D Converters, and Data Slicer. Allowable range is 2.7 to 5.5 V. Good bypassing is required. VCC Output of the Microphone amplifier. Maximum output swing is 3.0 Vpp for VCC 3.0 V. Maximum output current is >1.0 mA peak. Audio VCC 24 MCO 25 MCI (Input) Inverting input of the microphone amplifier. Gain and frequency response are set with external resistors and capacitors from this pin to the audio source and to MCO. VCC Audio 25 VB MCI 2.5 A 26 Audio VCC VAG (Output) Analog ground for the audio section filters. VAG is equal to VB and is buffered from VB. Maximum current which can be sourced from this pin is 500 A. 26 VAG 30 k 27 Audio VCC VB (Output) 240 VCC PA (Input) 28 Audio Power NOTE: 10 VB 0.01 An internal 1.5 V reference for several sections. This voltage is adjustable with bits 3/20-17. Maximum source current is 100 A. PSRR, noise and crosstalk depends on the external capacitor. 27 30 k 28 0.1 F VCC 4.7 F Supply pin for the power amplifier outputs. Allowable range is 2.7 to 5.5 V. Good bypassing is required. 1. All VCC pins must be within 0.5 V of each other. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC33411A/B 3.2-227 AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA MC33411A/B PIN FUNCTION DESCRIPTION (continued) Pin Symbol/Type 29 PAO+ (Output) Description Description Audio VCC 29 Output of the second power amplifier. This amplifier is set for unity inverting gain and is driven by PAO-. Maximum swing is 2.9 Vpp and maximum output current is >5.0 mA peak. DC level is 1.5 V. PAO+ 30 PAO- (Output) Same as Pin 29. Output of the first power amplifier. Its gain is set with external resistors and capacitors from this pin to PAI. Output capability is the same as Pin 28. 31 Gnd PA Ground pin for the power amplifier outputs. A direct connection to a ground plane is strongly recommended. 32 PAI (Input) Inverting input of the power amplifier. Gain and frequency response are set with external resistors and capacitors from this pin to the audio source and to PAO-. VCC Audio 32 VB PAI 2.5 A 33 E Out (Output) Expander output. This output is sensitive to load capacitance. Maximum output signal level is 2.5 Vpp. Maximum output current is >1.0 mA. Audio VCC 33 Rx Audio Output VB 34 Ecap VCC Audio VCC Audio 40 k 34 Ecap is the expander rectifier filter capacitor pin. Connect an external filter capacitor between VCC audio and Ecap. The recommended capacitance range is 0.1 to 1.0 F. The suggested value is 0.47 F. Ecap 35 E In (Input) The expander input pin is internally biased and has input impedance of 30 k. VCC Audio 35 30 k E In VB 36 VCC Audio Rx Out (Output) Rx Out is the Rx audio output. An internal low-pass filter has a -3.0 dB bandwidth of 4.0 kHz. 36 Rx Out VB NOTE: 1. All VCC pins must be within 0.5 V of each other. MC33411A/B 3.2-228 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA MC33411A/B PIN FUNCTION DESCRIPTION (continued) Pin Symbol/Type 37 RSSI In (Input) Description Description VCC Audio Voltage input to RSSI A/D converter. Full scale is 0 to 1.6 V. 37 RSSI In 38 Rx Audio In (Input) Input to the Rx Audio Path. Input impedance is 600 k. Input signal must be capacitor coupled VCC Audio RC Network 38 600 k Rx Audio In VB 39 VCC Audio DS In (Input) Input for the digital data from the RF Receiver section. Input impedance is 250 k. Hysteresis is internally provided. Input signal level must be between 50 and 700 mVpp. 250 k 250 k 39 DS In 40 Gnd Audio 41 LO2 Out (Output) Ground pin for the audio section. A direct connection to a ground plan is strongly recommended. LO2 VCC LO2 VCC LO2 VCC 50 Buffered output of the 2nd LO. This high frequency output is a current, requiring an external pullup resistor. 41 LO2 Out 2.5 mA 42 LO2 VCC (Input) 42 LO2 Section NOTE: 10 0.01 10 VCC Supply pin for the LO2 section. Allowable range is 2.7 to 5.5 V and must be within 0.5 V of all other VCC pins. Good bypassing is required and isolation with a 10 resistor is recommended. 1. All VCC pins must be within 0.5 V of each other. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC33411A/B 3.2-229 AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAAA AAAAAAAAAAAAA AAAAAAAAAAAAAA MC33411A/B PIN FUNCTION DESCRIPTION (continued) Pin Symbol/Type 43, 45 LO2+, LO2- Description Description The 2nd LO. External tank components are required. The internal capacitance across the pins is adjustable from 0 to 7.6 pF for fine tuning performance with bits 7/20-18. LO2 VCC LO2 VCC 43 LO2+ 44 LO2 Ctl (Input) LO2 Control is the dc control input for this VCO. Typically it is the output of the low-pass filter fed from the phase detector output. 45 LO2- LO2 VCC 44 55 k LO2 Ctl 46 LO2 Gnd 47 LO2PD (Output) Ground pin for the LO2 section. A direct connection to a ground plane is strongly recommended. LO2 PLL VCC 100/ 400 A LO2 PLL VCC 125 47 to Filter LO2 PD LO2 Phase Detector Output. The output either sources or sinks current, or neither, depending on the phase difference of the phase detector input signals. During lock, very narrow pulses with a frequency equal to the PLL reference frequency are present. Output current is either 100 A or 400 A, selectable with bit 3/14. 125 100/ 400 A 48 NOTE: LO2 Gnd Ground pin for the LO2 section. A direct connection to a ground plane is strongly recommended. 1. All VCC pins must be within 0.5 V of each other. MC33411A/B 3.2-230 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC33411A/B FUNCTIONAL DESCRIPTION The following text, graphics, tables and schematics are provided to the user as a source of valuable technical information about the MC33411. This information originates from thorough evaluation of the device performance. This data was obtained by using units from typical wafer lots. It is important to note that the forgoing data and information was from a limited number of units. By no means is the user to assume that the data following is a guaranteed parametric. Only the minimum and maximum limits identified in the electrical characteristics tables found earlier in the spec are guaranteed. Note: In the following descriptions, control bits in the MCU Serial Interface for the various functions will be identified by register number and bit number. For example, bit 3/19 indicates bit 19 of register 3. Bits 5/14-11 indicates register 5, bits 14 through 11. Please refer to Figure 1. General Circuit Description The MC33411A/B is a low power baseband IC designed to interface with the MC13145 UHF Wideband Receiver and MC13146 Transmitter for applications up to 2.0 GHz. The devices are primarily designated to be used for 900 MHz ISM band in a CT-900, low power, dual conversion cordless phone, but other applications such as data links with analog processing could be developed. This device contains complete baseband transmit and receive processing sections, a transmit and receive PLL section, a programmable PLL second local oscillator usable to 80 MHz, RSSI and low battery detect circuitry and serial interface for a microprocessor. "A" versions of the device have the ability to disable either the reference oscillator or MCU clock outputs. This feature is useful for systems where the MCU has an internal clock, allowing the user to place the MC33411 into Inactive (lowest power consumption) mode. The "A" version is also useful for systems where the MCU has a dedicated clock source, allowing for lower power consumption from the MC33411 by disabling the MCU clock output. "B" versions of the device are intended for systems where the MCU clock will always be driven from the MC33411. These bits are purposefully "hard-wired" to the enable state to ensure proper operation of the reference oscillator and MCU clock output even during battery discharge/recharge cycles. All internal registers are completely static - no refreshing is required under normal operation conditions. DC Current Figures 2 through 5 are the current consumption for Inactive (MC33411 "A" version only), Standby, Receive, and Active modes versus supply voltages. Figures 6 and 7 show the typical behavior of current consumption in relation to temperature. Figure 8 illustrates the effect of the MCU clock output frequency to supply current during Active mode. Figure 3. Supply Current versus Supply Voltage (Standby Mode) Figure 2. Supply Current versus Supply Voltage (Inactive Mode) 6.0 1.6 SUPPLY CURRENT (mA) SUPPLY CURRENT ( A) 5.0 1.8 TA = 25C 4.0 3.0 2.0 1.0 3.1 3.5 3.9 4.3 4.7 5.1 1.4 1.2 1.0 0.8 0.6 0.4 MCU Clock Off 0 2.7 TA = 25C 5.5 0.0 2.7 SUPPLY VOLTAGE (V) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 3.1 3.5 3.9 4.3 4.7 5.1 5.5 SUPPLY VOLTAGE (V) MC33411A/B 3.2-231 MC33411A/B Figure 4. Supply Current versus Supply Voltage (Receive Mode) Figure 5. Supply Current versus Supply Voltage (Active Mode) 14 10 TA = 25C 9.5 SUPPLY CURRENT (mA) SUPPLY CURRENT (mA) TA = 25C MCU Clock Out On 9.0 8.5 MCU Clock Out Off MCU Clock Out On 13 MCU Clock Out Off 12 8.0 7.5 2.7 3.1 3.5 3.9 4.3 4.7 5.1 11 2.7 5.5 3.1 3.5 3.9 4.3 4.7 5.1 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) Figure 6. Supply Current versus Temperature Normalized to 25C (Standby Mode) Figure 7. Supply Current versus Temperature Normalized to 25C (Receive & Active Mode) 5.5 20 740 19 720 17 680 16 660 I CC, (mA) I CC, ( A) 18 700 VCC = 3.6 V Active 15 14 13 640 VCC = 3.6 V 12 620 600 -20 11 0 25 70 85 10 -20 Receive -5.0 10 25 40 55 70 85 DEGREES (C) DEGREES (C) Figure 8. Supply Current versus MCU Clock Output Frequency (Active Mode) SUPPLY CURRENT (mA) 12.5 12.3 VCC = 3.6 V TA = 25C 12.1 11.9 11.7 11.5 30 1030 2030 3030 4030 5030 MCU CLK OUT (kHz) MC33411A/B 3.2-232 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA MC33411A/B Table 1. Tx Gain Adjust Programming (Register 7) Gain Control Bit #9 Gain Control Bit #8 Gain Control Bit #7 Gain Control Bit #6 Gain Control Bit #5 Gain Ctl # Gain/Attenuation Amount <6 -9.0 dB 0 0 1 1 0 6 -9.0 dB 0 0 1 1 1 7 -8.0 dB 0 1 0 0 0 8 -7.0 dB 0 1 0 0 1 9 -6.0 dB 0 1 0 1 0 10 -5.0 dB 0 1 0 1 1 11 -4.0 dB 0 1 1 0 0 12 -3.0 dB 0 1 1 0 1 13 -2.0 dB 0 1 1 1 0 14 -1.0 dB 0 1 1 1 1 15 0 dB 1 0 0 0 0 16 1.0 dB 1 0 0 0 1 17 2.0 dB 1 0 0 1 0 18 3.0 dB 1 0 0 1 1 19 4.0 dB 1 0 1 0 0 20 5.0 dB 1 0 1 0 1 21 6.0 dB 1 0 1 1 0 22 7.0 dB 1 0 1 1 1 23 8.0 dB 1 1 0 0 0 24 9.0 dB 1 1 0 0 1 25 10 dB - - - - - >25 10 dB Transmit Speech Processing System This portion of the audio path goes from "Tx Audio" to "Tx Out". The gain of the microphone amplifier is set with external resistors to receive the audio from the microphone hybrid or any other audio source. The MCO output has rail-to-rail capability. The "Tx Audio" pin will be ac-coupled. The audio transmit signal path includes automatic level control (ALC) (also referred to as the Compressor), Tx mute, limiter, filters, and Tx gain adjust. The ALC provides "soft" limiting to the output signal swing as the input voltage slowly increases. With this technique the gain is slightly lowered to help reduce distortion of the audio signal. The limiter section provides hard limiting due to rapidly changing singal levels, or transients. The ALC, TX mute, and limiter functions can be enabled or disabled vis the MCU serial interface. The Tx gain adjust can also be remotely controlled to set different desired signal levels. The adjustable gain stage provides 20 levels of gain in 1.0 dB increments. It is controlled with bits 7/9-5 as shown in Table 1. The effect of the gain setting under various ALC/Limiter On/Off settings is shown in Figure 9. The Low-Pass Filter before the gain stage is a switched capacitor filter with a corner frequency at 3.7 kHz. This frequency is dependent upon the SCF clock, nominaly set to 165 kHz and is directly proportional to the SCF clock. The filter response for inband, ripple, wideband, as well as phase and group delay, are shown in Figures 10 through 14. The mute switch at Pin 18 will mute a minimum of 60 dB. Bit 6/2 controls the mute. The limiter can be disabled by programming a logic 1 into 6/5. The compressor with ALC transfer characteristic is shown in Figure 15. The ALC gain is controlled by bits 6/11-12. If both bits are programmed to a logic 0, the ALC gain is set to 5.0 dB. If bit 6/11 is set to a logic 1, the ALC gain will be set to 10 dB, whereas if bit 6/12 is set to a logic 1 the ALC gain will be 25 dB. The ALC function may be disabled by programming a logic 1 into bit 6/6. The compressor low maximum gain can be set with bit 6/8. Programming this bit to a logic 0 sets the maximum gain to 23 dB. A lower maximum gain, nominally 13.5 dB, is achieved by programming the bit to a logic 1. The entire compressor can be bypassed (i.e., 0 dB) by programming bit 6/4 to a logic 1. Figures 16 through 22 describe the characteristics of the compressor, ALC, and limiter. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC33411A/B 3.2-233 MC33411A/B 2.0 0 -2.0 -4.0 -6.0 -8.0 -10 -12 -14 -16 -18 -20 -9.0 VCC = 3.6 V TA = 25C Vin = -10 dBV Figure 10. Lim In to Tx Out Gain versus Frequency (Inband) ALC Off, Limiter Off VOLTAGE GAIN (dB) MAX Tx OUT VOLTAGE (dBV) Figure 9. Tx Audio Output Voltage versus Gain Control Setting ALC Off, Limiter On ALC On, Limiter On/Off -7.0 -5.0 -3.0 -1.0 1.0 3.0 5.0 7.0 9.0 11 -0.8 Figure 12. Lim In to Tx Out Gain versus Frequency (Wideband) VCC = 3.6 V TA = 25C Vin = -10 dBV -1.0 -1.1 -1.2 -1.3 -1.4 -1.5 100 1000 10000 -50 -60 -70 -80 -90 -100 100 VCC = 3.6 V TA = 25C Vin = -10 dBV 1000 10000 100000 f, FREQUENCY (Hz) Figure 13. Lim In to Tx Out Phase versus Frequency Figure 14. Lim In to Tx Out Group Delay versus Frequency 1000000 10 VCC = 3.6 V TA = 25C Vin = -10 dBV GROUP DELAY (ms) PHASE (degrees) 10 0 -10 -20 -30 -40 f, FREQUENCY (Hz) 180 90 10000 Figure 11. Lim In to Tx Out Gain versus Frequency (Ripple) -0.9 135 1000 f, FREQUENCY (Hz) VOLTAGE GAIN (dB) VOLTAGE GAIN (dB) -0.7 VCC = 3.6 V TA = 25C Vin = -10 dBV Tx GAIN SETTING (dB) -0.5 -0.6 5.0 0 -5.0 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 100 45 0 -45 VCC = 3.6 V TA = 25C Vin = -10 dBV 1.0 0.1 -90 -135 -180 100 1000 f, FREQUENCY (Hz) MC33411A/B 3.2-234 10000 0 100 1000 10000 f, FREQUENCY (Hz) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC33411A/B Figure 16. Tx Audio Compressor Response (Distortion & Amplitude, ALC off, Lim off) 0 0 Vin > = -4.0 dBV, Vout = 1.26 Vpp (rapidly changing limited signals) -5.0 Vin = -2.5 dBV, Vout = -10 dBV "Comp Low Max Gain En" = 0 -20 Maximum Gain = 21 -33 -40 Compressor Transfer 10 -15 -20 8.0 -25 6.0 -30 4.0 -35 2.0 -40 -50 -60 -50 -40 -30 -20 C IN (dBV) -10 -45 -60 0 -5.0 -20 8.0 -25 6.0 -30 4.0 -35 -50 -40 -30 -20 -10 0 -20 -10 0 10 3.0 -15 Tx Out -20 2.0 -25 1.0 -30 -35 0 -40 -60 Distortion -50 -40 -30 -20 -10 0 Figure 20. Tx Output Audio Response (Lim off, ALC on) 4.0 -5.0 3.0 -15 2.0 Tx Out -25 -30 1.0 Distortion -50 -40 -30 -20 VCC = 3.6 V TA = 25C 3.0 -10 -15 Tx Out -20 2.0 -25 -30 1.0 Distortion -35 -10 0 0 10 0 10 4.0 0 VCC = 3.6 V TA = 25C -35 0 VCC = 3.6 V TA = 25C Figure 19. Tx Output Audio Response (Lim on, ALC off) -20 10 4.0 MCI VOLTAGE (dBV) -10 -40 -60 -30 C IN VOLTAGE (dBV) 0 -5.0 -40 -10 2.0 Tx OUT VOLTAGE (dBV) -45 -60 Distortion Tx OUT VOLTAGE (dBV) 12 10 -15 -40 Tx OUT VOLTAGE (dBV) 0 DISTORTION (%) Compressor Transfer 14 DISTORTION (%) C OUT VOLTAGE (dBV) -10 -50 Figure 18. Tx Output Audio Response (Lim & ALC off) 0 -5.0 Distortion C IN VOLTAGE (dBV) Figure 17. Tx Audio Compressor Response (Distortion & Amplitude, ALC off, Lim off) VCC = 3.6 V TA = 25C R6/8 = 0 12 -40 -60 MCI VOLTAGE (dBV) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA DISTORTION (%) -30 -20 Vin = -16 dBV, Vout = -13 dBV (slowly changing ALC signals) "Comp Low Max Gain En" = 1.0 Maximum Gain = 12 -23.5 -10 -50 -40 -30 -20 -10 0 0 10 MCI VOLTAGE (dBV) MC33411A/B 3.2-235 DISTORTION (%) -30 C OUT VOLTAGE (dBV) C OUT (dBV) -10 14 VCC = 3.6 V TA = 25C R6/8 = 1 DISTORTION (%) Figure 15. Compressor Characteristic with Programmable Compressor Maximum Gain MC33411A/B Figure 22. Tx Output Audio Response (Lim off, R6/12 = 1) 4.0 0 3.0 -10 -15 -20 2.0 Tx Out -25 1.0 -30 Distortion -35 -40 -60 -50 -40 -30 -20 Tx OUT VOLTAGE (dBV) -5.0 DISTORTION (%) Tx OUT VOLTAGE (dBV) -5.0 4.0 0 VCC = 3.6 V TA = 25C VCC = 3.6 V TA = 25C 3.0 -10 -15 Tx Out -20 -25 1.0 -30 Distortion -35 -10 0 10 0 2.0 -40 -60 DISTORTION (%) Figure 21. Tx Output Audio Response (Lim off, R6/11 = 1) -50 -40 MCI VOLTAGE (dBV) -30 -20 -10 0 0 10 MCI VOLTAGE (dBV) Data Slicer The data slicer will receive the low level digital signal from the RF receiver section at Pin 39. The input signal to the data slicer must be >200 mVpp. Hysteresis of 40 mV is internally provided. The output of the data slicer will be same waveform, but with an amplitude of 0 to VCC, and can be observed at Pin 17 if bits 5/9-8 are set to 00. The output can be inverted by setting bit 5/9 = 1. The data slicer can be disabled by setting bit 5/8 = 1. Receive Audio Path The Receive Audio Path (Pins 38, 36-33) consists of an anti-aliasing filter, a low-pass filter, side tone attenuator, gain adjust stage, a mute switch, expander and volume control. The switched capacitor low-pass filter is an 8 pole filter, with a corner frequency at 3.8 kHz. This is designed to provide bandwidth limiting in the audio range. The gain stage provides 20 dB of gain adjustment in 1.0 dB steps, measured from Pin 38 to 36. Bits 7/4-0 are used to set the gain according to Table 3. The mute switch, controlled by bit 6/1, will mute a minimum of 60 dB. When the compressor output is within 3.0 dB of the expander input level, the Rx output (Pin 36) can be attenuated (referenced to the expander output) by bits 6/10-9. For 6/10-9 = 00, the attenuation is 0 dB. For the other combinations, 6/10-9 = 01, attenuation = 3.0 dB; 6/10-9 = 10, attenuation = 6.0 dB; and 6/10-9 = 11, attenuation = 10.4 dB (See Table 2). The expander can be bypassed by setting bit 6/3 = 1. Table 3 shows the various gain control settings which can be accessed in Register 7. Table 4 is the volume control settings, also located in Register 7. Figures 23 through 31 illustrate the various characteristics of the reveive audio path. AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA Table 2. Side Tone Attenuate Programming Side Tone Attenuate Bit #1 Side Tone Attenuate Bit #0 Select # Side Tone Attenuate Amount at Expander Input Side Tone Attenuate Amount at Expander Output 0 0 0 0 dB 0 dB 0 1 1 1.5 dB 3.0 dB 1 0 2 3.0 dB 6.0 dB 1 1 3 5.2 dB 10.4 dB AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA Table 3. Rx Gain Adjust Programming (Register 7) Gain Control Bit #4 Gain Control Bit #3 Gain Control Bit #2 Gain Control Bit #1 Gain Control Bit #0 Gain Ctl # Gain/Attenuation Amount - - - - - <6 -9.0 dB 0 0 1 1 0 6 -9.0 dB 0 0 1 1 1 7 -8.0 dB 0 1 0 0 0 8 -7.0 dB 0 1 0 0 1 9 -6.0 dB 0 1 0 1 0 10 -5.0 dB 0 1 0 1 1 11 -4.0 dB 0 1 1 0 0 12 -3.0 dB 0 1 1 0 1 13 -2.0 dB MC33411A/B 3.2-236 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA MC33411A/B Table 3. Rx Gain Adjust Programming (Register 7) (continued) Gain Control Bit #4 Gain Control Bit #3 Gain Control Bit #2 Gain Control Bit #1 Gain Control Bit #0 Gain Ctl # Gain/Attenuation Amount 0 1 1 1 0 14 -1.0 dB 0 1 1 1 1 15 0 dB 1 0 0 0 0 16 1.0 dB 1 0 0 0 1 17 2.0 dB 1 0 0 1 0 18 3.0 dB 1 0 0 1 1 19 4.0 dB 1 0 1 0 0 20 5.0 dB 1 0 1 0 1 21 6.0 dB 1 0 1 1 0 22 7.0 dB 1 0 1 1 1 23 8.0 dB 1 1 0 0 0 24 9.0 dB 1 1 0 0 1 25 10 dB - - - - - >25 10 dB AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA Table 4. Volume Control Programming Volume Control Bit #13 Volume Control Bit #12 Volume Control Bit #11 Volume Control Bit #10 Volume Ctl # Gain/Attenuation Amount 0 0 0 0 0 -14 dB 0 0 0 1 1 -12 dB 0 0 1 0 2 -10 dB 0 0 1 1 3 -8.0 dB 0 1 0 0 4 -6.0 dB 0 1 0 1 5 -4.0 dB 0 1 1 0 6 -2.0 dB 0 1 1 1 7 0 dB 1 0 0 0 8 2.0 dB 1 0 0 1 9 4.0 dB 1 0 1 0 10 6.0 dB 1 0 1 1 11 8.0 dB 1 1 0 0 12 10 dB 1 1 0 1 13 12 dB 1 1 1 0 14 14 dB 1 1 1 1 15 16 dB MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC33411A/B 3.2-237 MC33411A/B Figure 24. E Out Maximum Output Voltage versus Volume Control Setting -10 -12 -14 -16 -18 -20 -9.0 5.0 0 -5.0 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 100 1.4 VCC = 3.6 V TA = 25C MAX E OUT VOLTAGE (dBV) 2.0 0 -2.0 -4.0 -6.0 -8.0 -7.0 -5.0 -3.0 -1.0 1.0 3.0 5.0 7.0 9.0 VCC = 3.6 V TA = 25C 1.0 0.8 0.6 -10 -6.0 -2.0 2.0 6.0 10 Rx GAIN SETTING (dB) VOLUME SETTING (dB) Figure 25. Rx Audio In to Rx Out Gain versus Frequency (Inband) Figure 26. Rx Audio In to Rx Out Gain versus Frequency (Ripple) 14 0.3 0.2 0.1 VCC = 3.6 V TA = 25C Vin = -20 dBV 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 1000 VCC = 3.6 V TA = 25C Vin = -20 dBV -0.7 100 10000 1000 f, FREQUENCY (Hz) f, FREQUENCY (Hz) Figure 27. Rx Audio In to Rx Out Gain versus Frequency (Wideband) Figure 28. Rx Audio In to Rx Out Phase versus Frequency 10 VCC = 3.6 V TA = 25C Vin = -20 dBV 135 90 PHASE (degrees) -20 -30 -40 -50 -60 45 0 -45 -70 -90 -80 -90 -135 -100 100 1000 10000 f, FREQUENCY (Hz) MC33411A/B 3.2-238 1000 180 0 -10 VOLTAGE GAIN (dB) 1.2 0.4 -14 11 VOLTAGE GAIN (dB) VOLTAGE GAIN (dB) MAX Rx OUT VOLTAGE (dBV) Figure 23. Rx Out Maximum Output Voltage versus Gain Control Setting 100000 1000000 -180 100 VCC = 3.6 V TA = 25C Vin = -20 dBV 1000 1000 f, FREQUENCY (Hz) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC33411A/B Figure 30. AALPF Response Gain versus Frequency Figure 29. Rx Audio In to Rx Out Group Delay versus Frequency 1.0 10 0 -10 VCC = 3.6 V TA = 25C Vin = -20 dBV VOLTAGE GAIN (dB) GROUP DELAY (ms) 10 0.1 -20 -30 -40 -50 -60 -70 -80 -90 0 100 1000 -100 100 10000 f, FREQUENCY (Hz) VCC = 3.6 V TA = 25C Vin = -20 dBV SCF Clk = 2.5 MHz SCF Corner = 57 kHz 1000 10000 100000 1000000 f, FREQUENCY (Hz) Figure 31. E In to E Out Transfer Curve 5.0 VCC = 3.6 V TA = 25C 24 20 -15 -25 16 Expander Transfer 12 -35 8.0 -45 DISTORTION (%) E OUT VOLTAGE (dBv) -5.0 28 Distortion 4.0 -55 -65 -40 -35 -30 -25 -20 -15 -10 -5.0 0 0 E IN VOLTAGE (dBV) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC33411A/B 3.2-239 MC33411A/B Power Amplifiers The power amplifiers (Pins 29, 30, 32) are designed to drive the earpiece in a handset, or the telephone line via a hybrid circuit in the base unit. Each output (PAO+ and PAO-) can source and sink 5.0 mA, and can swing 1.3 Vpp each. For high impedance loads, each output can swing 2.7 Vpp (5.4 Vpp differential). The gain of the amplifiers is set with a feedback resistor from Pin 30 to 32, and an input resistor at Pin 32. The differential gain is 2x the resistor ratio. Capacitors can be used for frequency shaping. The pins' dc level is VB (1.5 V). The Mute switch, controlled with bit 6/0, will provide 60 dB of muting with a 50 k feedback resistor. The amount of muting will depend on the value of the feedback resistor. F i g u r e s 32 a n d 33 s h o w t h e p o w e r a m p l i f i e r swing/distortion for VCC = 3.6 V, and Figure 34 illustrates the maximum swing capability for various value of VCC. Figure 33. Power Amplifier Distortion Figure 32. Power Amplifier Maximum Output Swing 3.2 20 PAO- (DISTORTION %) 2.4 PAO- (Vpp ) VCC = 3.6 V TA = 25C Open 2.8 130 2.0 1.6 1.2 0.8 10 Open 5.0 VCC = 3.6 V TA = 25C 0.4 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 PAI (Vpp) 3.5 3.0 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 PAI (Vpp) Figure 34. Power Amplifier Maximum Output Swing versus VCC Open TA = 25C 130 2.5 PAO- (Vpp ) 130 15 2.0 1.5 1.0 0.5 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VCC (V) MC33411A/B 3.2-240 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC33411A/B Reference Oscillator/MCU Clk Out The reference oscillator provides the frequency basis for the three PLLs, the switched capacitor filters, and the MCU clock output. The source for the reference clock can be a crystal in the range of 4.0 to 18.25 MHz connected to Pins 15 & 16, or it can be an external source connected to Fref In (Pin 15). The reference frequency is directed to: a. A programmable 12-bit counter (register bits 4/11-0) to provide the reference frequency for the three PLLs. The 12-bit counter is to be set such that, in conjunction with the programmable counters within each PLL, the proper frequencies can be produced by each VCO. b. A programmable 6-bit counter (register bits 4/17-12), followed by a /2 stage, to set the frequency for the switched capacitor filters to 165 kHz, or as close to that as possible. c. A programmable 3-bit counter (register bits 7/16-14) which provides the MCU clock output (see Tables 5 and 6). A representation of the reference oscillator is given by Figures 39 and 36. Figure 35. Reference Oscillator Schematic Reference Oscillator RPI CPI Gm Fref In CPO AAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAA AAAAAAAAA AAAAAAAA AAAAAAAAAAAAAAAA AAAAAAAAA AAAAAAAA AAAAAAAAA AAAAAAAA Figure 36. Reference Oscillator Input and Output Impedance Input Impedance (RPI // CPI) 11.6 k // 2.9 pF Output Impedance (RPO // CPO) 4.5 k // 2.5 pF Figures 37 and 38 show a typical gain/phase response of the oscillator. Load capacitance (CL), equivalent series resistance (ESR), and even supply voltage will have an effect on the oscillator response as shown in Figures 39 and 40. It should be noted that optimum performance is achieved when C1 equals C2 (C1/C2 = 1). Figure 41 represents the ESR versus crystal load capacitance for the reference oscillator. This relationship was defined by using a 6.0 dB minimum loop gain margin at 3.6 V. This is considered the minimum gain margin to guarantee oscillator start-up. Oscillator start-up is also significantly affected by the crystal load capacitance selection. In Figure 39, the relationship between crystal load capacitance and ESR can be seen. The lower the load capacitance the better the performance. Given the desired crystal load capacitance, C1 and C2 can be determined from Figure 42. It should also be pointed out that current consumption increases when C1 C2. Be careful not to overdrive the crystal. This could cause a noise problem. An external series resistor on the crystal output can be added to reduce the drive level, if necessary. RPO Fref Out Xtal C1 C2 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC33411A/B 3.2-241 MC33411A/B Figure 38. Reference Oscillator Open Loop Phase versus Frequency Figure 37. Reference Oscillator Open Loop Gain versus Frequency 16 100 14 10 8.0 60 PHASE (degrees) VOLTAGE GAIN (dB) 12 VCC = 3.6 V TA = 25C 10.24 MHz, 10 pF Load Capacitance Crystal 80 VCC = 3.6 V TA = 25C 10.24 MHz, 10 pF Load Capacitance Crystal 6.0 Fref out Fref in 16 15 4.0 2.0 40 20 0 Fref out Fref in 16 15 -20 -40 -60 0 13 pF -2.0 -4.0 10.237 10.238 10.239 13 pF 10.240 13 pF -80 10.241 10.242 -100 10.237 10.243 13 pF 10.238 f, FREQUENCY (MHz) 10.240 10.241 10.242 10.24 f, FREQUENCY (MHz) Figure 39. Reference Oscillator Startup Time versus Total ESR - Inactive to Rx Mode Figure 40. Reference Oscillator Open Loop Gain versus ESR 5.0 20 VCC = 3.6 V TA = 25C 4.0 VCC = 3.6 V TA = 25C 16 3.0 GAIN (dB) START UP TIME (ms) 10.239 2.048 MHz 2.0 12 8.0 5.12 MHz 4.0 1.0 0 0 50 100 150 200 250 300 0 350 0 50 100 150 200 250 300 350 TOTAL ESR () TOTAL ESR () Figure 41. Maximum ESR versus Crystal Load Capacitance (C1 = C2) Figure 42. Optimum Values for C1, C2 versus Equivalent Required Parallel Capacitance 1000 70 50 C1 AND C2 (pF) MAXIMUM ESR () 60 100 40 30 20 10 10 10 12 14 16 18 20 22 24 26 CRYSTAL LOAD CAPACITANCE (pF) MC33411A/B 3.2-242 28 30 32 0 5.0 10 15 20 25 30 35 CRYSTAL LOAD CAPACITANCE (pF) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA MC33411A/B Table 5. MCU Clock Divider Programming MCU Clk Bit #16 MCU Clk Bit #15 MCU Clk Bit #14 Clk Out Divider Value 0 0 0 2.0 0 0 1 3.0 0 1 0 4.0 0 1 1 5.0 1 0 0 2.5 1 0 1 20 1 1 0 80 1 1 1 312.5 AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA Table 6. MCU Clock Divider Frequencies Clock Output Divider Crystal Frequency 2.0 2.5 3.0 4.0 5.0 20 80 312.5 10.24 MHz 5.12 MHz 4.096 MHz 3.413 MHz 2.56 MHz 2.048 MHz 512 kHz 128 kHz 32.768 kHz 11.15 MHz 5.575 MHz 4.46 MHz 3.717 MHz 2.788 MHz 2.23 MHz 557 kHz 139 kHz 35.68 kHz 12 MHz 6.0 MHz 4.8 MHz 4.0 MHz 3.0 MHz 2.4 MHz 600 kHz 150 kHz 38.4 kHz Transmit and Receive (LO1) PLL Sections The transmit and receive PLLs (Pins 6-9 and 1-4, respectively) are designed to be part of a 900 MHz system. In a typical application the Transmit PLL section will be set up to generate the transmit frequency, and the Receive PLL section will be set up to generate the LO1 frequency. The two sections are identical, and function independently. External requirements for each include a low-pass filter, a 900 MHz VCO, and a 64/65 or 128/129 dual modulus prescaler. The frequency output of the VCO is to be reduced by the dual modulus prescaler, and then input to the MC33411 (at Pin 8 or 2). That frequency is then further reduced by the programmable 13-bit counter (bits 1/19-7 or 2/19-7), and provided to one side of the Phase Detector, where it is compared with the PLL reference frequency. The output of the phase detector (at Pin 6 or 4) is a Three-State charge pump which drives the VCO through the low-pass filter. Bits 1/20 and 2/20 set the gain of each of the two charge pumps to either 100/2 A/radian or 400/2 A/radian. The polarity of the two phase detector outputs is set with bits 1/21 and 2/21. If the bit = 0, the appropriate PLL is configured to operate with a non-inverting low-pass filter/VCO combination. If the low-pass filter/VCO combination is inverting, the polarity bit should be set to 1. The 7-bit A and A' counters (bits 1/6-0 and 2/6-0) are to be set to drive the Modulus Control input of the 64/65 or 128/129 dual modulus prescalers. The Modulus Control outputs (Pins 9 and 1) can be set to either a voltage mode (logic 1) or a current mode (logic 0) with bit 3/16. To calculate the settings of the N and A registers, the following procedure is used: f VCO f PLL Nt P + Nt (Nt must be an integer) +N (1) (2) A = Remainder of Equation 2 (decimal part of N x P) (3) where: fVCO = the VCO frequency fPLL = the PLL Reference Frequency set within the MC33411 P = the smaller divisor of the dual modulus prescaler (64 for a 64/65 prescaler) N = the whole number portion is the setting for the N (or N') counter within the MC33411 A = the setting for the A (or A') counter within the MC33411 For example, if the VCO is to provide 910 MHz, and the internal PLL reference frequency is 50 kHz, then the equations yield: Nt x 10 6 + 18, 200 + 910 50 x 10 3 N + 18,64200 + 284.375 A + 0.375 x 64 + 24 The N register setting is 284 (0 0001 0001 1100), and the A register setting is 24 (001 1000). MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC33411A/B 3.2-243 MC33411A/B 2nd LO (LO2) This PLL is designed to be the 2nd Local Oscillator in a typical 900 MHz system, and is designed for frequencies up to 80 MHz. The VCO and varactor diodes are included, and are to be used with an external tank circuit (Pins 43-45). Bits 4/20-18 are used to select an internal capacitor, with a value in the range of 0 to 7.6 pF, to parallel the varactor diodes and the tank's external capacitor. This permits a certain amount of fine tuning of the oscillator's performance. See Table 7. A buffered output is provided to drive, e.g., a mixer. The frequency is set with the programmable 14-bit counter (bits 3/13-0) in conjunction with the PLL reference frequency. For example, if the reference frequency is 50 kHz, and the 2nd LO frequency is to be 63.3 MHz, the 14-bit counter needs to be set to 1266d (00 0100 1111 0010). The output level is dependent on the value of the impedance at Pin 41, partly determined by the external pull-up resistor. The output of the phase detector is a Three-State charge pump which drives the varactor diodes through an external low-pass filter. Bit 3/14 sets the gain of the charge pump to either 100/2 A/radian (logic 0) or 400/2 A/radian (logic 1). Bit 3/15 sets its polarity - if 0, the PLL is configured to operate with a non-inverting low-pass filter/VCO combination. If the low-pass filter/VCO combination is inverting, the polarity bit should be set to 1. Please note that the 2nd LO VCO on the MC33411 is of the non-inverting type. Figures 43 through 45 describe the response of the 2nd LO. AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA Table 7. LO2 Capacitor Select Programming LO2 Capacitor Select Bit #20 LO2 Capacitor Select Bit #19 LO2 Capacitor Select Bit #18 Select # LO2 Capacitor Select Value 0 0 0 0 0 pF 0 0 1 1 1.1 pF 0 1 0 2 2.2 pF 0 1 1 3 3.3 pF 1 0 0 4 4.3 pF 1 0 1 5 5.4 pF 1 1 0 6 6.5 pF 1 1 1 7 7.6 pF MC33411A/B 3.2-244 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC33411A/B Figure 44. Minimum Overall Q versus Coil Inductance for LO2 Figure 43. Varicap Capacitance versus Control Voltage 16 80 VCC = 3.6 V TA = 25C 15 MINIMUM OVERALL Q CAPACITANCE (pF) 14 70 13 12 11 10 9.0 8.0 60 50 60 MHz 40 30 20 7.0 10 6.0 0 0 1 2 3 4 5 6 VCC = 3.6 V TA = 25C 30 MHz 80 MHz 0 200 400 600 800 1000 1200 COIL INDUCTANCE (nH) CONTROL VOLTAGE (V) Figure 45. LO2 Amplitude versus Overall Tank Parallel Resistance 35 LO AMPLITUDE (dBmV) 30 VCC = 3.6 V TA = 25C FLO = 63.3 MHz 25 20 15 10 5 0 0 500 1000 1500 2000 2500 3000 3500 TANK RESISTANCE () MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC33411A/B 3.2-245 MC33411A/B Loop Filter Characteristics Let's consider the following discussion on loop filters. The fundamental loop characteristics, such as capture range, loop bandwidth, lock-up time, and transient response are controlled externally by loop filtering. Figure 96 is the general model for a Phase Lock Loop (PLL). pole and a zero around the 0 dB point to guarantee sufficient phase margin in this design (Qp in Figure 98). Figure 48. Bode Plot of Gain and Phase in Open Loop Condition 0 fi Phase Detector (Kpd) Filter (Kf) VCO (Ko) fo A, Open Loop Gain Open Loop Gain Figure 46. PLL Model 0 -90 Phase Divider (Kn) Qp Where: Kpd = Phase Detector Gain Constant Kf = Loop Filter Transfer Function Ko = VCO Gain Constant Kn = Divide Ratio (N) fi = Input frequency fo = Output frequency fo/N = Feedback frequency divided by N p A From control theory the loop transfer function can be represented as follows: A + K K K pd f o Kn Kpd can be either expressed as being 200 A/4 or 800 A/4. More details about performance of different type PLL loops, refer to Motorola application note AN535. The loop filter can take the form of a simple low pass filter. A current output, type 2 filter will be used in this discussion since it has the advantage of improved step response, velocity, and acceleration. The type 2 low pass filter discussed here is represented as follows: R2C1C2 + C1 ) C2 T1 T2 + R2C2 By substituting equation (5) into (4), it follows: A openloop (4) + K K T1 pd o w 2C1K nT2 1 1 (5) ) jwT2 ) jwT1 (6) The phase margin (phase + 180) is thus determined by: + arctan(wT2)-arctan(wT1) R2 dQ p C2 dw From Figure 97, capacitor C1 forms an additional integrator, providing the type 2 response, and filters the discrete current steps from the phase detector output. The function of the additional components R2 and C2 is to create a pole and a zero (together with C1) around the 0 dB point of the open loop gain. This will create sufficient phase margin for stable loop operation. In Figure 98, the open loop gain and the phase is displayed in the form of a Bode plot. Since there are two integrating functions in the loop, originating from the loopfilter and the VCO gain, the open loop gain response follows a second order slope (-40 dB/dec) creating a phase of -180 degrees at the lower and higher frequencies. The filter characteristic needs to be determined such that it is adding a MC33411A/B 3.2-246 jwK n ) jw(R2C2)) jw 1 ) jw R2C1C2 C1)C2 K (1 pd o (7) At =p, the derivative of the phase margin may be set to zero in order to assure maximum phase margin occurs at p (see also Figure 98). This provides an expression for p: To VCO C1 K The two time constants creating the pole and the zero in the Bode plot can now be defined as: Qp Figure 47. Loop Filter with Additional Integrating Element + openloop Open loop gain From Phase Detector -180 The open loop gain including the filter response can be expressed as: +0+ T2 - T1 ) (wT2)2 1 ) (wT1)2 w + wp + 1 T2T1 (8) 1 (9) Or rewritten: T1 + w 12T2 p (10) By substituting into equation (7), solve for T2: T2 + tan Qp 2 ) p4 wp (11) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC33411A/B By choosing a value for p and Qp, T1 and T2 can be calculated. The choice of Qp determines the stability of the loop. In general, choosing a phase margin of 45 degrees is a good choice to start calculations. Choosing lower phase margins will provide somewhat faster lock-times, but also generate higher overshoots on the control line to the VCO. This will present a less stable system. Larger values of phase margin provide a more stable system, but also increase lock-times. The practical range for phase margin is 30 degrees up to 70 degrees. The selection of p is strongly related to the desired lock-time. Since it is quite complicated to accurately calculate lock time, a good first order approach is: T_lock [ w3p (12) Equation (12) only provides an order of magnitude for lock time. It does not clearly define what the exact frequency difference is from the desired frequency and it does not show the effect of phase margin. It assumes, however, that the phase detector steps up to the desired control voltage without hesitation. In practice, such step response approach is not really valid. If the two input frequencies are not locked, their phase maybe momentarily zero and force the phase detector into a high impedance mode. Hence, the lock times may be found to be somewhat higher. In general, p should be chosen far below the reference frequency in order for the filter to provide sufficient attenuation at that frequency. In some applications, the reference frequency might represent the spacing between channels. Any feedthrough to the VCO that shows up as a spur might affect adjacent channel rejection. In theory, with the loop in lock, there is no signal coming from the phase detector. But in practice small current pulses and leakage currents will be supplied to both the VCO and the phase detector. The external capacitors may show some leakage, too. Hence, the lower p, the better the reference frequency is filtered, but the longer it takes for the loop to lock. As shown in Figure 98, the open loop gain at p is 1 (or 0 dB), and thus the absolute value of the complex open loop gain as shown in equation (6) solves C1: C1 + K K T1 pd o w2KnT2 ) ) 1 1 wpT2 2 wpT1 2 *1 + C1 T2 T1 R2 + T2 C2 f + 2p 1LC (16) T In which L represents the external inductor value and CT represents the total capacitance (including internal capacitance) in parallel with the inductor. The VCO gain can be easily calculated via the internal varicap transfer curve shown in Figure 43. As can be derived from Figure 43, the varicap capacitance changes 2.0 pF over the voltage range from 1.0 V to 3.0 V: pF DCvar + 2.0 2.0 V (17) Combining (16) with (17) the VCO gain can be determined by: Ko 1 + j2.0V * 1 2p LC T 2p L C 1 T ) DCvar 2 (18) Although the basic loopfilter previously described provides adequate performance for most applications, an extra pole may be added for additional reference frequency filtering. Given that the channel spacing is based on the reference frequency, and any feedthrough to the first LO may effect parameters like adjacent channel rejection and intermodulation. Figure 100 shows a loopfilter architecture incorporating an additional pole. Figure 49. Loop Filter with Additional Integrating Element From Phase Detector To VCO R3 R2 C1 (13) With C1 known, and equation (5) solve C2 and R2: C2 The VCO gain is dependent on the selection of the external inductor and the frequency required. The free running frequency of the VCO is determined by: (14) C2 C3 For the additional pole formed by R3 and C3 to be efficient, the cut-off frequency must be much lower than the reference frequency. However, it must also be higher than p in order not to compromise phase margin too much. The following equations were derived in a similar manner as for the basic filter previously described. (15) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC33411A/B 3.2-247 MC33411A/B Similarly, it can be shown: A K Ko pd + - ) 1 ) jwT2 openloop K w 2(C1 ) C2 ) C3) - w 2C1C2C3R2R3 1 ) jwT1 (19) n In which: T1 ) (C1C2)T3 + C1(C1))C2C2))T2 C3 * w 2C1T2T3 T2 + R2C2 (20) (21) T3 + R3C3 (22) From T1 it can be derived that: C2 + (T1 ) T2)C3 * C1 T2T3 )* T3T1 * T1 ) w T1T2T3 2 (23) In analogy with (13), by forcing the loopgain to 1 (0 dB) at p, we obtain: C1(T1 ) T2) ) C2T3 ) C3T2 + K K pd o K nw p 2 Solving for C1: (T2 C1 ) 1) 1 * T1)T3C3 * (T3 * T1)T2C3 ) (T3 * T1) + (T3 * T1)T2 ) (T3 * T1)T3 * T2 + Kw1 p MC33411A/B 3.2-248 wpT1 2 K T1 pd o w p 2K n (24) ) wpT2 2 1) w pT1 1 ) T3 * T1 ) wp2T1T2T3 T3 (26) The K-factor shown determines how far the additional pole frequency will be separated from p. Selecting too small of a K-factor, the equations may provide negative capacitance or resistor values. Too large of a K-factor may not provide the maximum attenuation. By selecting R3 to be 100 k, C3 becomes known and C1 and C2 can be solved from the equations. By using equations (11) and (10), time constants T2 and T1 can be derived by selecting a phase margin. Finally, R2 follows from T2 and C2. A test circuit with the following components and conditions was constructed with these results: Loop Filter (See Figure 100): C1 = 470 pF R2 = 68 k C2 = 3.9 nF R3 = 270 k C3 = 82 pF 2 K By selecting p via (12), the additional time constant expressed as T3, can be set to: T3 wpT2 2 (25) LO2 Tank: Ctotal = 39.3 pF Lext = 150 nH, Q = 50 @ 250 MHz Reference Frequency = 10.24 MHz (unadjusted) R Counter = 205 LO2 Counter = 1266 AC Load = 25 Frequency of LO2 = 63.258 MHz Phase Noise @ 50 kHz offset = -107 dBc Sidebands @ 50 kHz & 100 kHz offsets = -69 dBc Low Battery/ RSSI Voltage Measurement Both the Low Battery (bits 5/23-18) and RSSI (bits 5/17-12) measurement circuits have a 6-bit A/D converter whose value may be read back via the SPI. The A/D's sample their voltages at a frequency equal to the internal SCF clock frequency divided by 128. The Low Battery Measurement A/D senses and divides by 2.5 the supply voltage (at Pin 23). Please note that the minimum Low Battery Detect (LBD) voltage is 2.7 V, since there is no guarantee that the device will operate below this value. The RSSI Measurement senses the voltage at Pin 37. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC33411A/B These values are compared to the internal reference VB (1.5 V) which is available at Pin 37. The value read back from the LBD A/D will therefor be approximately: N(for LBD) 63 (V ) CC [ 2.5(VB)(1.07) VB Voltage Adjust and Characteristics VB has a production tolerance of 8%, and can be adjusted over a 9% range using bits 3/20-17. The adjustment steps will be 1.2% each (See Table 8). If desired, VB can be used to bias external circuitry, as long as the load current on this pin does not exceed 10 A. VB varies by less than 0.5% over supply voltage, referenced to VCC = 3.6 V. The value of the de-coupling capacitor connected from VB to ground affects both the noise and crosstalk from the receive and transmit audio paths, so the value should be chosen with caution. Figures 50 and 51 show this relationship. (27) and for the RSSI N(for RSSI) [ 63 (RSSIVoltage) (VB)(1.07) (28) AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA Table 8. VB Voltage Reference Programming Vref Adjust Bit #20 Vref Adjust Bit #19 Vref Adjust Bit #18 Vref Adjust Bit #17 Vref Adjust # Voltage Reference Adjustment Amount 0 0 0 0 0 -9.0% 0 0 0 1 1 -7.8% 0 0 1 0 2 -6.6% 0 0 1 1 3 -5.4% 0 1 0 0 4 -4.2% 0 1 0 1 5 -3.0% 0 1 1 0 6 -1.8% 0 1 1 1 7 -0.6% 1 0 0 0 8 0.6% 1 0 0 1 9 1.8% 1 0 1 0 10 3.0% 1 0 1 1 11 4.2% 1 1 0 0 12 5.4% 1 1 0 1 13 6.6% 1 1 1 0 14 7.8% 1 1 1 1 15 9.0% Figure 51. Crosstalk/Noise from E In to Tx Out versus VB Capacitor Figure 50. Crosstalk/Noise from C In to E Out versus VB Capacitor -105 -50 Crosstalk -92 -115 -97 -120 -102 VCC = 3.6 V TA = 25C -125 0.01 1.0 -107 10 -63 -60 -65 Crosstalk, 130 load -65 -70 -67 -75 -80 -69 Crosstalk, no load -71 -85 -90 0.1 Noise -95 0.01 VB CAPACITOR (F) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA VCC = 3.6 V TA = 25C -73 0.1 1.0 -75 10 VB CAPACITOR (F) MC33411A/B 3.2-249 NOISE LEVEL @ Tx OUT (dBV) CROSSTALK (dB) -110 -61 -55 CROSSTALK (dB) -87 NOISE LEVEL @ E OUT (dBV) Noise MC33411A/B MCU Serial Interface The MCU Serial Interface is a 3-wire interface, consisting of a Clock line, an Enable line, and a bi-directional Data line. The interface is always active, i.e., it cannot be powered down as all other sections of the MC33411 are disabled and enabled through this interface. After the device power-up (or whenever a reset condition is required), the MCU should perform the following steps: 14. Initialize the Data line to a high impedance state. 15. Initialize the Clock line to a logic low. 16. Initialize the Enable line to a logic low. 17. Pulse the Clock line a minimum of once (RZ format) while leaving the Enable line continuously low. This places the SPI port into a known condition. 18. The clock (Return-to-Zero format) must be supplied to the MC33411 at Pin 11 to write or read data, and can be any frequency up to 2.0 MHz. The clock need not be present when data is not being transferred. The Enable line must be low when data is not being transferred. Internally there are 7 data registers, 24-bits each, addressed with 4-bits ranging from $h1 to $h7 (see Tables 9 and 10). Register 5, bits 23-12 are read-only bits, while all other register bits are Read/Write. All unused/unimplemented bits are reserved for Motorola use only. The contents of the 7 registers can be read out at any time. All bits are written in, or read out, on the clock's positive transition. The write and read operations are as follows: Load all registers with their desired initial values. Figure 52. Writing Data to the MC33411 1 2 3 24 Clock Data 4-Bit Address MSB LSB 24-Bit Data from MCU Latch Address Latch Data Enable a. Write Operation: - To write data to the MC33411, the following sequence is required (see Figure 52): 19. The Enable line is taken high. 20. Five bits are entered: - The first bit must be a 0 to indicate a Write operation. - The next four bits identify the register address (0001-0111). The MSB is entered first. 21. The Enable line is taken low. At this transition, the address is latched in and decoded. 22. The Enable line is maintained low while the data bits are clocked in. The MSB is entered first, and the LSB last. If 24-bits are written to a register which has less than 24 active bits (e.g., register 6), the unassigned bits are to be 0. MC33411A/B 3.2-250 23. After the last bit is entered, the Enable line is to be taken high and then low. The falling edge of this pulse latches in the just entered data. The clock line must be at a logic low and must not transition in either direction during this Enable pulse. 24. The Enable line must then be kept low until the next communication. Note: If less than 24 bits are to be written to a data register, it is not necessary to enter the full 24 bits, as long as they are all lower order bits. For example, if bits 0-6 of a register are to be updated, they can be entered as 7 bits with 7 clock cycles in step 4 above. However, if this procedure is used, a minimum of 4 bits, with 4 clock pulses, must be entered. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC33411A/B Figure 53. Reading Data from the MC33411 Sets Data Pin to Output 1 2 3 24 Clock Data 4-Bit Address Enable MSB LSB 24-Bit Data from MC33411 Sets Data Pin to Input Latch Address and Load Data into Shift Register b. Read Operation: - To read the output bits (bits 5/23-12), or the contents of any register, the following sequence is required (see Figure 53): 1. The Enable line is taken high. 2. Five bits are entered: - The first bit must be a 1 to indicate a Read operation. - The next four bits identify the register address (0001-0111). The MSB is entered first. 3. The Enable line is taken low. At this transition, the address is latched in and decoded, and the contents of the selected register is loaded into the 24-bit output shift register. At this point, the Data line (Pin 12) is still an input. 4. While maintaining the Enable line low, the data is read out. The first clock rising edge will change the Data line to an output, and the MSB will be present on this line. 5. The full contents of the register are then read out (MSB first, LSB last) with a total of 24 clock rising edges, including the one in step 4 above. It is recommended that the MCU read the bits after the clock's falling edge. 6. After the last clock pulse, the Enable line is to be taken high and then low. The falling edge of this pulse returns the Data Pin to be an input. The clock line must be at a logic low and must not transition in either direction during this Enable pulse. 7. The Enable line must then be kept low until the next communication. Power Supply/Power Saving Modes The power supply voltage, applied to all VCC pins, can range from 2.7 to 5.5 V. All VCC pins must be within 0.5 V of each other, and each must be bypassed. It is recommended a ground plane be used, and all leads to the MC33411 be as short and direct as possible. To reduce the possibility of device latch-up, it is highly recommended that the Audio, Synthesizer and RF VCC portions of the chip be isolated from the main supply through 10 to 25 resistors (see the Evaluation PCB Schematic, Figure 54). This also provides RF-to-Audio noise isolation. The supply and ground pins are distributed as follows: 1. Pin 23 provides power to the audio section. Pin 40 is the ground pin. 2. Pin 28 provides power to the speaker amplifier section. Pin 31 is the ground pin. 3. Pin 3 provides power to the Rx PLL section. Pin 5 is the ground pin. 4. Pin 7 provides power to the Tx PLL section, and the MCU interface. Pin 5 is the ground pin. 5. Pin 42 provides power to the 2nd LO section. Pins 46 and 48 are the ground pins. 6. Pin 14 is the ground pin for the digital circuitry. Power for the digital circuitry is derived from Pin 23. To conserve power, various sections can be individually disabled by using bits 5/7-0 and 6/7 (setting a bit to 1 disables the section). 1. Reference Oscillator Disable (bit 5/0) - The reference oscillator at Pins 15 and 16 is disabled, thereby denying a clock to the three PLLs and the switched capacitor filters. This function is not available on the "B" version. 2. Tx PLL Disable (bit 5/1) - The 13-bit and 7-bit counters, input buffer, phase detector, and modulus control blocks are disabled. The charge pump output at Pin 6 will be in a Hi-Z state. 3. Rx PLL Disable (bit 5/2) - The 13-bit and 7-bit counters, input buffer, phase detector, and modulus control blocks are disabled. The charge pump output at Pin 4 will be in a Hi-Z state. 4. LO2 PLL Disable (bit 5/3) - The VCO, 14-bit counter, output buffer, and phase detector are disabled. The charge pump output at Pin 47 will be in a Hi-Z state. 5. Power Amplifier Disable (bit 5/4) - The two speaker amplifiers are disabled. Their outputs will go to a high impedance state. 6. Rx Audio Path Disable (bit 5/5) - The anti-aliasing filter, low-pass filter, and variable gain stage are disabled. 7. Tx Audio Path Disable (bit 5/6) - Disables the microphone amplifier and low-pass filter. 8. Low Battery/RSSI Measurement Disable (bit 5/7) - Both 6-bit A/Ds are disabled. 9. Data Slicer Disable (bit 5/8) - The data slicer is disabled and DS Out goes to high impedance. 10. MCU Clock Disable (bit 6/7) - The MCU clock counter is disabled and the MCU Clock Output will be in a Hi-Z state. This function is not available on the "B" version. Note: The 12-bit reference counter is disabled if the three PLLs are disabled (bits 5/1-3 = 1). MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC33411A/B 3.2-251 MC33411A/B 3.2-252 1 2 3 4 5 6 7 0001 0010 0011 0100 0101 0110 0111 MSB Bit 23 1 2 3 4 5 6 7 0001 0010 0011 0100 0101 0110 0111 Bit 20 0 0 0 1 1 0 0 0 1 1 0 0 Bit 13 Bit 12 2nd LO PD Cur Sel MSB 13-Bit Rx N' Counter Divide Value Bit 16 Bit 14 Bit 13 Bit 12 0 0 0 0 2nd LO PD Cur Sel 0 1 MSB 0 0 0 13-Bit Rx N' Counter Divide Value 0 13-Bit Tx N Counter Divide Value Bit 15 0 0 FTxMC/ LO2 FRxMC Polarity Mode Select 0 0 0 Volume Control ALC Gain ALC Gain = 25 = 10 0 6-Bit RSSI A/D Output 0 0 1 1 MCU Clock Divide Select 0 Data Slicer Invert Bit 9 0 0 1 0 1 1 Volume Control 0 1 0 0 Data Slicer Invert 0 0 0 0 Bit 9 MSB MSB Bit 6 Bit 5 0 1 LSB LSB 0 LSB 0 LSB Bit 7 1 MSB 1 MSB Bit 6 0 0 Bit 5 0 0 Bit 2 0 0 0 0 0 0 0 0 0 Bit 1 LSB 0 LSB 0 LSB 0 LSB LSB Bit 0 1 Tx Gain Adjust 1 1 0 1 1 Rx Gain Adjust 1 1 0 0 0 0 0 0 0 0 RSSI & Tx Audio Rx Audio Power 2nd LO Rx PLL Tx PLL Ref Osc Batt. A/D Disable Disable Amp PLL Disable Disable Disable Disable Disable Disable* 0 0 0 0 0 0 0 0 Expander Power MCU Clk ALC Limiter Compres- Pass- Pass- Tx Mute Rx Mute Amp Disable* Disable Disable ser through through Mute 0 0 0 0 0 0 0 0 0 0 7-Bit Rx A' Counter Divide Value 0 12-Bit Reference Counter Divide Value 0 Bit 3 7-Bit Tx A Counter Divide Value Bit 4 Rx Gain Adjust RSSI & 2nd LO Rx PLL Tx PLL Ref Osc Audio Rx Audio Power Batt. A/D Tx Amp PLL Disable Disable Disable Disable Disable Disable Disable Disable* Compres- Expander Power MCU Clk ALC Limiter Pass- Pass- Tx Mute Rx Mute Amp Disable* Disable Disable ser through through Mute 14-Bit 2nd LO Counter Divide Value 0 0 Bit 8 LSB Bit 0 LSB Bit 1 7-Bit Rx A' Counter Divide Value Bit 2 LSB Bit 3 7-Bit Tx A Counter Divide Value Bit 4 12-Bit Reference Counter Divide Value Tx Gain Adjust 0 Data Slicer Disable 0 Comp. Side Tone Max. Attenuate Select Low Gain En. 0 0 0 0 0 0 0 Bit 10 Unused Register Bits 0 0 ALC Gain ALC Gain = 25 = 10 0 MSB 0 0 0 Bit 11 LSB LSB Bit 7 14-Bit 2nd LO Counter Divide Value Bit 8 Data Slicer Disable Comp. Side Tone Max. Attenuate Select Low Gain En. Bit 10 Unused Register Bits MSB Bit 11 Table 10. Register Map: Power-Up Defaults MCU Clock Divide Select 6-Bit RSSI A/D Output 6-Bit Switched Capacitor Filter Counter Divide Value Bit 17 VB Voltage Reference Adjust 1 MSB 1 MSB Bit 19 LO2 Capacitor Select 0 Tx Tx PD Polarity Cur Sel Select 0 0 Rx Rx PD Polarity Cur Sel Select 0 0 Bit 21 6-Bit Battery Voltage A/D Output 0 Test Modes Bit 22 Bit 18 LO2 Capacitor Select Bit 14 13-Bit Tx N Counter Divide Value Bit 15 FTxMC/ LO2 FRxMC Polarity Mode Select Bit 16 6-Bit Switched Capacitor Filter Counter Divide Value Bit 17 Table 10. Register Map: Power-Up Defaults 0 MSB Bit 23 Bit 18 VB Voltage Reference Adjust MSB MSB Bit 19 Table 9. Register Map * These bits not included in "B" version. Reg Num Reg Add Bit 20 Tx Tx PD Polarity Cur Sel Select Rx Rx PD Polarity Cur Sel Select Bit 21 6-Bit Battery Voltage A/D Output Test Modes Bit 22 * These bits not included in "B" version. Reg Num Reg Add Table 9. Register Map MC33411A/B MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC33411A/B Evaluation PCB The evaluation PCB is a versatile board which allows the MC33411 to be configured to analyze individual operating parameters or the complete audio transmit and receive paths. The general purpose schematic and associated parts list for the PCB are given in Figure 54. With the jumpers positioned as shown in the parts list (either shunt or open). the PCB is configured to analyze complete transmit and receive audio paths. Parts lists as "user defined" can be installed to analyze other functions of the device. Table 2 lists these devices along with their respective functions. Table 11. Component(s) Function Notes R20 Microphone Bias R19,J24,J27 Pre-emphasis/De-emphasis R3,C7,J5 Detector Low-Pass Filter (LPF) R4,C8 Data Slicer LPF L1,C21 2nd LO Tank See Equations 16 and 17 C18,R9,C19,R10,C20 2nd LO LPF See Eq. 10, 11, 12, 21, 23, 25, and 26 C26,R13,C27,R14,C28 Rx 1st LO LPF See Eq. 10, 11, 12, 21, 23, 25, and 26 C22,R11,C23,R12,C24 Tx 1st LO LPF See Eq. 10, 11, 12, 21, 23, 25, and 26 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC33411A/B 3.2-253 MC33411A/B 3.2-254 H5X2 1 2 3 4 5 6 7 8 9 10 JP3 FRx Rx MC Rx PD Det In RSSI RX EN R3 U/D C7 U/D C8 U/D R4 U/D L1 U/D R9 U/D C20 U/D J5 N/O C18 U/D C19 U/D R10 U/D C21 U/D J15 N/C V CCL C40 0.01 C14 0.01 C6 1.0 C9 1.0 R18 49.9 V CCL J6 N/C C10 1.0 V CCA 1.0 C12 C28 U/D C29 0.01 2 3 4 R14 U/D R13 U/D 1 R x P D P L L G n d 1 1 0 1 R12 U/D 1 2 C24 U/D C23 U/D C22 U/D R11 U/D C25 0.01 5 6 7 8 9 T x P D Mic Amp 24 VCC Audio 23 C In 22 C cap 21 C Out 20 Lim In 19 Tx Out 18 DS Out 17 Fref Out 16 Fref In 15 Gnd Digital 14 MCU Clk Out 13 P L F L T D C a V F x C T M E L t C x C N K a U1 MC33411 2 7 0.1 C38 4.7 C39 2 2 6 5 V V V M C B A C C G I P A 2 8 V CCA 3 3 3 3 3 3 2 5 4 3 2 1 0 9 E E E P G P P A n A A I c O I d O O n a u p t P - + A P L F L R x F V M R C C x C R x O u t 3 6 C12 1.0 C26 U/D V CCR LO2- LO2 Gnd LO2 PD LO2 Gnd C27 U/D 45 46 47 48 J8 N/O J7 N/C 37 RSSI In 38 Rx Audio In 39 DS In 40 Gnd Audio 41 LO2 Out 42 LO2 V CC 43 LO2+ 44 LO2 Ctl 47.5 k J26 N/C R7 130 R2 47.5 k C5 1.0 J24 N/O 1.0 C1 V CCA TP6 Lim In TP2 C In TP1 JP1 TP7 Gnd J18 Tx Out Tx DAT Tx PD Tx EN Tx MC FTx AAAA AAAA H5X2 1 2 3 4 5 6 7 8 9 10 JP2 H5X2 1 2 3 4 5 6 7 8 9 10 C30 10 Tx AUD J1 PA Out- J10 VCCD J17 Tx DAT Tx EN Rx EN EN CLK Data CK Out DS Out C16 27 p Y1 10 M C15 27 p R8 49.9 U/D R20 V CCA VCCD C17 0.01 J12 N/C J13 N/O J11 N/C J3 N/C C4 0.47 C3 1.0 J2 N/C C2 220 p J23 N/C R1 47.5 k U/D R19 PA Out+ J9 F In J14 0.01 C31 D1 1N4001 C36 10 R17 10 C34 10 R16 10 C32 10 R15 10 V CCL C37 0.01 V CCR C35 0.01 C33 0.01 V CCA Figure 54. LO2 Ctl TP5 LO2 Out J16 AUD In J4 PA In TP4 E In TP3 C13 220 p R5 47.5 k J25 N/C J27 N/O R6 Figure 54. MC33411A/B Evaluation PCB Schematic MC33411A/B MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC33411A/B Figure 55. MC33411A/B Evaluation PCB Component Side 4.5 4.5 C1,C3,C5,C6,C9,C10,C12 C13,C2 C4,C11 L1,R3,R4,C7,C8,R9,R10, R11,R12,R13,R14,C18,R19, C19,R20,C20,C21,C22,C23, C24,C26,C27,C28 C14,C17,C25,C29,C31,C33, C35,C37,C40 C15,C16 C30,C32,C34,C36 C38 C39 D1 1.0 220 p 0.47 User defined 0.01 27 p 10 4.7 0.1 1N4001 JP1,JP2,JP3 J1,J4,J9,J10 J2,J3,J6,J7,J11,J12,J15, J23,J25,J26 J5,J8,J13,J24,J27 J14,J16 J17,J18 R1,R2,R5,R6 R7 R8,R18 R15,R16,R17 U1 Y1 Header, 5x2 AudioJack Switchcroft 3501FP Shunt Open SMA EF Johnson 142-0701-201 Bananna Johnson Components 108-0902-001 47.5 k 130 49.9 10 MC33411AFTA or MC33411BFTA 10 M Raltron A-10.000-18 Default Units: Microfarads, Microhenries, and Ohms MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC33411A/B 3.2-255 MC33411A/B Figure 56. MC33411A/B Evaluation PCB Solder Side 4.5 4.5 MC33411A/B 3.2-256 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC144110 MC144111 Digital-to-Analog Converters with Serial Interface CMOS LSI MC144110 The MC144110 and MC144111 are low-cost 6-bit D/A converters with serial interface ports to provide communication with CMOS microprocessors and microcomputers. The MC144110 contains six static D/A converters; the MC144111 contains four converters. Due to a unique feature of these DACs, the user is permitted easy scaling of the analog outputs of a system. Over a 5 to 15 V supply range, these DACs may be directly interfaced to CMOS MPUs operating at 5 V. * * * * * * * * P SUFFIX PLASTIC DIP CASE 707 18 1 Direct R-2R Network Outputs Buffered Emitter-Follower Outputs Serial Data Input Digital Data Output Facilitates Cascading Direct Interface to CMOS P Wide Operating Voltage Range: 4.5 to 15 V Wide Operating Temperature Range: 0 to 85C Software Information is Contained in Document M68HC11RM/AD DW SUFFIX SOG PACKAGE CASE 751D 20 1 MC144111 P SUFFIX PLASTIC DIP CASE 646 14 1 DW SUFFIX SOG PACKAGE CASE 751G BLOCK DIAGRAM 16 VDD Qn Rn R1 OUT OUT OUT Q1 OUT 1 ORDERING INFORMATION 2R 2R R R R R R 2R 2R 2R 2R 2R MC144110P MC144110DW Plastic DIP SOG Package MC144111P MC144111DW Plastic DIP SOG Package HEX BUFFER (INVERTING) C ENB CLK D * C Q Din HEX LATCH C 6-BIT SHIFT REGISTER D Dout * Transparent Latch MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC144110 MC144111 3.2-257 PIN ASSIGNMENTS MC144110P MC144110DW Din 1 18 VDD Din 1 20 VDD Q1 Out 2 17 Dout Q1 Out 2 19 Dout R1 Out 3 16 R6 Out R1 Out 3 18 R6 Out Q2 Out 4 15 Q6 Out Q2 Out 4 17 Q6 Out R2 Out 5 14 R5 Out R2 Out 5 16 R5 Out Q3 Out 6 13 Q5 Out Q3 Out 6 15 Q5 Out R3 Out 7 12 R4 Out R3 Out 7 14 R4 Out ENB 8 11 Q4 Out ENB 8 13 Q4 Out VSS 9 10 CLK VSS 9 12 CLK 10 11 NC NC MC144111P MC144111DW Din 1 14 VDD Din 1 16 VDD Q1 Out 2 13 Dout Q1 Out 2 15 Dout R1 Out 3 14 R4 Out R1 Out 3 12 R4 Out Q2 Out 4 11 Q4 Out Q2 Out 4 13 Q4 Out R2 Out 5 10 R3 Out R2 Out 5 12 R3 Out ENB 6 9 Q3 Out ENB 6 11 Q3 Out VSS 7 8 CLK VSS 7 10 CLK NC 8 9 NC NC = NO CONNECTION MC144110 MC144111 3.2-258 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA AAAAAAAAAAA AAAA AAAAAAA AAA AAAAAAAAAAA AAAA AAAAAAA AAA AAAAAAAAAAA AAAA AAAAAAA AAA AAAAAAAAAAA AAAA AAAAAAA AAA AAAAAAAAAAA AAAA AAAAAAA AAA AAAAAAAAAAA AAAA AAAAAAA AAA AAAAAAAAAAA AAAA AAAAAAA AAA AAAAAAAAAAA AAAA AAAAAAA AAA AAAAAAAAAAA AAAA AAAAAAA AAA AAAAAAAAAAA AAAA AAAAAAA AAA AAAAAAAAAAA AAAA AAAAAAA AAA AAAAAAAAAAA AAAA AAAAAAA AAA AAAAAAAAAAA AAAA AAAAAAA AAA MAXIMUM RATINGS* (Voltages referenced to VSS) Parameter Symbol Value Unit VDD - 0.5 to + 18 V Vin - 0.5 to VDD + 0.5 V I 10 mA DC Supply Voltage Input Voltage, All Inputs DC Input Current, per Pin Power Dissipation (Per Output) TA = 70C, MC144110 MC144111 TA = 85C, MC144110 MC144111 POH mW 30 50 10 20 Power Dissipation (Per Package) TA = 70C, MC144110 MC144111 TA = 85C, MC144110 MC144111 PD Storage Temperature Range Tstg This device contains protection circuitry to guard against damage due to high static voltages or electric fields; however, it is advised that precautions be taken to avoid application of voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation it is recommended that Vin and Vout be constrained to the range VSS (Vin or Vout) VDD. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either VSS or VDD). mW 100 150 25 50 - 65 to + 150 C * Maximum Ratings are those values beyond which damage to the device may occur. ELECTRICAL CHARACTERISTICS (Voltages referenced to VSS, TA = 0 to 85C unless otherwise indicated) Symbol Parameter Test Conditions VDD Min Max Unit VIH High-Level Input Voltage (Din, ENB, CLK) 5 10 15 3.0 3.5 4 -- -- -- V VIL Low-Level Input Voltage (Din, ENB, CLK) 5 10 15 -- -- -- 0.8 0.8 0.8 V IOH High-Level Output Current (Dout) Vout = VDD - 0.5 V 5 - 200 -- A IOL Low-Level Output Current (Dout) Vout = 0.5 V 5 200 -- A IDD Quiescent Supply Current 15 15 -- -- 12 8 mA MC144110 Iout = 0 A MC144111 Input Leakage Current (Din, ENB, CLK) Vin = VDD or 0 V 15 -- 1 A Vnonl Nonlinearity Voltage (Rn Out) See Figure 1 5 10 15 -- -- -- 100 200 300 mV Vstep Step Size (Rn Out) See Figure 2 5 10 15 19 39 58 137 274 411 mV Voffset Offset Voltage from VSS Din = $00, See Figure 1 -- -- 1 LSB IE Emitter Leakage Current VRn Out = 0 V 15 -- 10 A hFE DC Current Gain IE = 0.1 to 10.0 mA TA = 25C -- 40 -- -- VBE Base-to-Emitter Voltage Drop IE = 1.0 mA -- 0.4 0.7 V Iin MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC144110 MC144111 3.2-259 SWITCHING CHARACTERISTICS (Voltages referenced to VSS, TA = 0 to 85C, CL = 50 pF, Input tr = tf = 20 ns unless otherwise indicated) Parameter Symbol VDD Min Max Unit twH Positive Pule Width, CLK (Figures 3 and 4) 5 10 15 2 1.5 1 -- -- -- s twL Negative Pulse Width, CLK (Figure 3 and 4) 5 10 15 5 3.5 2 -- -- -- s tsu Setup Time, ENB to CLK (Figures 3 and 4) 5 10 15 5 3.5 2 -- -- -- s tsu Setup Time, Din to CLK (Figures 3 and 4) 5 10 15 1000 750 500 -- -- -- ns th Hold Time, CLK to ENB (Figures 3 and 4) 5 10 15 5 3.5 2 -- -- -- s th Hold Time, CLK to Din (Figures 3 and 4) 5 10 15 5 3.5 2 -- -- -- s Input Rise and Fall Times 5 - 15 -- 2 s Cin Input Capacitance 5 - 15 -- 7.5 pF OUTPUT VOLTAGE @ Rn Out, % (VDD - VSS ) tr, tf 100 75 Vnonl ACTUAL 50 IDEAL 25 Voffset 0 0 $00 15 $0F 31 $1F 47 $2F 63 $3F PROGRAM STEP LINEARITY ERROR (integral linearity). A measure of how straight a device's transfer function is, it indicates the worst-case deviation of linearity of the actual transfer function from the best- fit straight line. It is normally specified in parts of an LSB. Figure 1. D/A Transfer Function MC144110 MC144111 3.2-260 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA VRn OUT STEP SIZE Step Size = VDD 0.75 VDD 64 64 (For any adjacent pair of digital numbers) DIGITAL NUMBER Figure 2. Definition of Step Size ENB 50% tsu CLK th 50% C1 C2 twH twL D1 Din CN D2 DN th tsu Figure 3. Serial Input, Positive Clock ENB th tsu CLK C1 twL Din C2 CN twH D1 D2 tsu DN th Figure 4. Serial Input, Negative Clock MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC144110 MC144111 3.2-261 PIN DESCRIPTIONS OUTPUTS INPUTS Dout Data Output Din Data Input The digital data output is primarily used for cascading the DACs and may be fed into Din of the next stage. Six-bit words are entered serially, MSB first, into digital data input, Din. Six words are loaded into the MC144110 during each D/A cycle; four words are loaded into the MC144111. The last 6-bit word shifted in determines the output level of pins Q1 Out and R1 Out. The next-to-last 6-bit word affects pins Q2 Out and R2 Out, etc. R1 Out through Rn Out Resistor Network Outputs These are the R-2R resistor network outputs. These outputs may be fed to high-impedance input FET op amps to bypass the on-chip bipolar transistors. The R value of the resistor network ranges from 7 to 15 k . ENB Negative Logic Enable Q1 Out through Qn Out NPN Transistor Outputs The ENB pin must be low (active) during the serial load. On the low-to-high transition of ENB, data contained in the shift register is loaded into the latch. Buffered DAC outputs utilize an emitter-follower configuration for current-gain, thereby allowing interface to low-impedance circuits. SUPPLY PINS CLK Shift Register Clock Data is shifted into the register on the high-to-low transition of CLK. CLK is fed into the D-input of a transparent latch, which is used for inhibiting the clocking of the shift register when ENB is high. The number of clock cycles required for the MC144110 is usually 36. The MC144111 usually uses 24 cycles. See Table 1 for additional information. VSS Negative Supply Voltage This pin is usually ground. VDD Positive Supply Voltage The voltage applied to this pin is used to scale the analog output swing from 4.5 to 15 V p-p. Table 1. Number of Channels vs Clocks Required Number of Channels Required Number of Clock Cycles 1 6 Q1/R1 Q1/R1 2 12 Q1/R1, Q2/R2 Q1/R1, Q2/R2 3 18 Q1/R1, Q2/R2, Q3/R3 Q1/R1, Q2/R2, Q3/R3 4 24 Q1/R1, Q2/R2, Q3/R3, Q4/R4 Q1/R1, Q2/R2, Q3/R3, Q4/R4 5 30 Q1/R1, Q2/R2, Q3/R3, Q4/R4, Q5/R5 Not Applicable 6 36 Q1/R1, Q2/R2, Q3/R3, Q4/R4, Q5/R5, Q6/R6 Not Applicable MC144110 MC144111 3.2-262 Outputs Used on MC144110 Outputs Used on MC144111 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA Encoder and Decoder Pairs MC145026 MC145027 MC145028 CMOS These devices are designed to be used as encoder/decoder pairs in remote control applications. The MC145026 encodes nine lines of information and serially sends this information upon receipt of a transmit enable (TE) signal. The nine lines may be encoded with trinary data (low, high, or open) or binary data (low or high). The words are transmitted twice per encoding sequence to increase security. The MC145027 decoder receives the serial stream and interprets five of the trinary digits as an address code. Thus, 243 addresses are possible. If binary data is used at the encoder, 32 addresses are possible. The remaining serial information is interpreted as four bits of binary data. The valid transmission (VT) output goes high on the MC145027 when two conditions are met. First, two addresses must be consecutively received (in one encoding sequence) which both match the local address. Second, the 4 bits of data must match the last valid data received. The active VT indicates that the information at the Data output pins has been updated. The MC145028 decoder treats all nine trinary digits as an address which allows 19,683 codes. If binary data is encoded, 512 codes are possible. The VT output goes high on the MC145028 when two addresses are consecutively received (in one encoding sequence) which both match the local address. P SUFFIX PLASTIC DIP CASE 648 16 1 D SUFFIX SOG PACKAGE CASE 751B 16 1 DW SUFFIX SOG PACKAGE CASE 751G 16 * * * * * * * Operating Temperature Range: - 40 to + 85C Very-Low Standby Current for the Encoder: 300 nA Maximum @ 25C Interfaces with RF, Ultrasonic, or Infrared Modulators and Demodulators RC Oscillator, No Crystal Required High External Component Tolerance; Can Use 5% Components Internal Power-On Reset Forces All Decoder Outputs Low Operating Voltage Range: MC145026 = 2.5 to 18 V* MC145027, MC145028 = 4.5 to 18 V * For Infrared Applications, See Application Note AN1016/D 1 ORDERING INFORMATION MC145026P MC145026D Plastic DIP SOG Package MC145027P MC145027DW Plastic DIP SOG Package MC145028P MC145028DW Plastic DIP SOG Package PIN ASSIGNMENTS MC145026 ENCODER MC145027 DECODERS MC145028 DECODERS A1 1 16 VDD A1 1 16 VDD A1 1 16 VDD A2 2 15 Dout A2 2 15 D6 A2 2 15 A6 A3 3 14 TE A3 3 14 D7 A3 3 14 A7 A4 4 13 RTC A4 4 13 D8 A4 4 13 A8 A5 5 12 CTC A5 5 12 D9 A5 5 12 A9 A6/D6 6 11 RS R1 6 11 VT R1 6 11 VT A7/D7 7 10 A9/D9 C1 7 10 R2/C2 C1 7 10 R2/C2 VSS 8 9 A8/D8 VSS 8 9 VSS 8 9 Din MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Din MC145026 MC145027 MC145028 3.2-263 RS RTC CTC TE 11 14 12 13 3-PIN OSCILLATOR AND ENABLE 9 15 D out RING COUNTER AND 1-OF-9 DECODER 8 7 6 5 4 3 2 1 1 A1 2 A2 3 A3 4 A4 5 A5 TRINARY DETECTOR 6 A6/D6 7 A7/D7 9 A8/D8 A9/D9 DATA SELECT AND BUFFER /4 DIVIDER VDD = PIN 16 VSS = PIN 8 10 Figure 1. MC145026 Encoder Block Diagram CONTROL LOGIC 15 14 LATCH 4-BIT SHIFT REGISTER 11 13 12 VT D6 D7 D8 D9 SEQUENCER CIRCUIT 5 A1 A2 A3 A4 A5 4 3 2 1 1 2 3 DATA EXTRACTOR 4 5 C1 7 6 R1 9 C2 10 Din VDD = PIN 16 VSS = PIN 8 R2 Figure 2. MC145027 Decoder Block Diagram MC145026 MC145027 MC145028 3.2-264 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 11 CONTROL LOGIC 9 A1 1 A2 2 A3 3 A4 4 A5 5 8 7 SEQUENCER CIRCUIT 6 5 4 3 2 VT 1 9-BIT SHIFT REGISTER DATA EXTRACTOR A6 15 C1 A7 14 7 6 R1 A8 13 9 C2 10 R2 Din VDD = PIN 16 VSS = PIN 8 A9 12 Figure 3. MC145028 Decoder Block Diagram MAXIMUM RATINGS* (Voltages Referenced to VSS) Rating Symbol Value Unit VDD DC Supply Voltage (except SC41343, SC41344) - 0.5 to + 18 V VDD DC Supply Voltage (SC41343, SC41344 only) - 0.5 to + 10 V Vin DC Input Voltage - 0.5 to VDD + 0.5 V Vout DC Output Voltage - 0.5 to VDD + 0.5 V DC Input Current, per Pin 10 mA Iout DC Output Current, per Pin 10 mA PD Power Dissipation, per Package 500 mW Tstg Storage Temperature - 65 to + 150 C 260 C Iin TL Lead Temperature, 1 mm from Case for 10 Seconds This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, Vin and Vout should be constrained to the range VSS (Vin or Vout) VDD. * Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Electrical Characteristics tables or Pin Descriptions section. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145026 MC145027 MC145028 3.2-265 ELECTRICAL CHARACTERISTICS -- MC145026*, MC145027, and MC145028 (Voltage Referenced to VSS) Guaranteed Limit Symbol Characteristic - 40C 25C 85C VDD V Min Max Min Max Min Max Unit VOL Low-Level Output Voltage (Vin = VDD or 0) 5.0 10 15 -- -- -- 0.05 0.05 0.05 -- -- -- 0.05 0.05 0.05 -- -- -- 0.05 0.05 0.05 V VOH High-Level Output Voltage (Vin = 0 or VDD) 5.0 10 15 4.95 9.95 14.95 -- -- -- 4.95 9.95 14.95 -- -- -- 4.95 9.95 14.95 -- -- -- V (Vout = 4.5 or 0.5 V) (Vout = 9.0 or 1.0 V) (Vout = 13.5 or 1.5 V) 5.0 10 15 -- -- -- 1.5 3.0 4.0 -- -- -- 1.5 3.0 4.0 -- -- -- 1.5 3.0 4.0 (Vout = 0.5 or 4.5 V) (Vout = 1.0 or 9.0 V) (Vout = 1.5 or 13.5 V) 5.0 10 15 3.5 7.0 11 -- -- -- 3.5 7.0 11 -- -- -- 3.5 7.0 11 -- -- -- (Vout = 2.5 V) (Vout = 4.6 V) (Vout = 9.5 V) (Vout = 13.5 V) 5.0 5.0 10 15 - 2.5 - 0.52 - 1.3 - 3.6 -- -- -- -- - 2.1 - 0.44 - 1.1 - 3.0 -- -- -- -- - 1.7 - 0.36 - 0.9 - 2.4 -- -- -- -- (Vout = 0.4 V) (Vout = 0.5 V) (Vout = 1.5 V) 5.0 10 15 0.52 1.3 3.6 -- -- -- 0.44 1.1 3.0 -- -- -- 0.36 0.9 2.4 -- -- -- VIL VIH IOH IOL Low-Level Input Voltage V High-Level Input Voltage V High-Level Output Current mA Low-Level Output Current mA Iin Input Current -- TE (MC145026, Pull-Up Device) 5.0 10 15 -- -- -- -- -- -- 3.0 16 35 11 60 120 -- -- -- -- -- -- A Iin Input Current RS (MC145026), Din (MC145027, MC145028) 15 -- 0.3 -- 0.3 -- 1.0 A Iin Input Current A1 - A5, A6/D6 - A9/D9 (MC145026), A1 - A5 (MC145027), A1 - A9 (MC145028) 5.0 10 15 -- -- -- -- -- -- -- -- -- 110 500 1000 -- -- -- -- -- -- Cin Input Capacitance (Vin = 0) -- -- -- -- 7.5 -- -- pF IDD Quiescent Current -- MC145026 5.0 10 15 -- -- -- -- -- -- -- -- -- 0.1 0.2 0.3 -- -- -- -- -- -- A IDD Quiescent Current -- MC145027, MC145028 5.0 10 15 -- -- -- -- -- -- -- -- -- 50 100 150 -- -- -- -- -- -- A Idd Dynamic Supply Current -- MC145026 (fc = 20 kHz) 5.0 10 15 -- -- -- -- -- -- -- -- -- 200 400 600 -- -- -- -- -- -- A Idd Dynamic Supply Current -- MC145027, MC145028 (fc = 20 kHz) 5.0 10 15 -- -- -- -- -- -- -- -- -- 400 800 1200 -- -- -- -- -- -- A A * Also see next Electrical Characteristics table for 2.5 V specifications. MC145026 MC145027 MC145028 3.2-266 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS -- MC145026 (Voltage Referenced to VSS) Guaranteed Limit Symbol Characteristic - 40C 25C 85C VDD V Min Max Min Max Min Max Unit VOL Low-Level Output Voltage (Vin = 0 V or VDD) 2.5 -- 0.05 -- 0.05 -- 0.05 V VOH High-Level Output Voltage (Vin = 0 V or VDD) 2.5 2.45 -- 2.45 -- 2.45 -- V -- 0.3 -- 0.3 -- 0.3 V VIL Low-Level Input Voltage (Vout = 0.5 V or 2.0 V) 2.5 VIH High-Level Input Voltage (Vout = 0.5 V or 2.0 V) 2.5 2.2 -- 2.2 -- 2.2 -- V IOH High-Level Output Current (Vout = 1.25 V) 2.5 0.28 -- 0.25 -- 0.2 -- mA IOL Low-Level Output Current (Vout = 0.4 V) 2.5 0.22 -- 0.2 -- 0.16 -- mA Iin Input Current (TE -- Pull-Up Device) 2.5 -- -- 0.09 1.8 -- -- A Iin Input Current (A1-A5, A6/D6-A9/D9) 2.5 -- -- -- 25 -- -- A IDD Quiescent Current 2.5 -- -- -- 0.05 -- -- A Idd Dynamic Supply Current (fc = 20 kHz) 2.5 -- -- -- 40 -- -- A SWITCHING CHARACTERISTICS -- MC145026*, MC145027, and MC145028 (CL = 50 pF, TA = 25C) Symbol tTLH, tTHL Characteristic Output Transition Time Figure No. Guaranteed Limit VDD Min Max Unit 4,8 5.0 10 15 -- -- -- 200 100 80 ns tr Din Rise Time -- Decoders 5 5.0 10 15 -- -- -- 15 15 15 s tf Din Fall Time -- Decoders 5 5.0 10 15 -- -- -- 15 5.0 4.0 s fosc Encoder Clock Frequency 6 5.0 10 15 0.001 0.001 0.001 2.0 5.0 10 MHz Decoder Frequency -- Referenced to Encoder Clock 12 5.0 10 15 1.0 1.0 1.0 240 410 450 kHz TE Pulse Width -- Encoders 7 5.0 10 15 65 30 20 -- -- -- ns f tw * Also see next Switching Characteristics table for 2.5 V specifications. SWITCHING CHARACTERISTICS -- MC145026 (CL = 50 pF, TA = 25C) VDD Min Max Unit 4, 8 2.5 -- 450 ns Encoder Clock Frequency 6 2.5 1.0 250 kHz TE Pulse Width 7 2.5 1.5 -- s Symbol tTLH, tTHL fosc tw Guaranteed Limit Figure No. Characteristic Output Transition Time MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145026 MC145027 MC145028 3.2-267 ANY OUTPUT 90% tf 10% tr VDD 90% tTLH Din tTHL 10% Figure 4. VSS Figure 5. 1 / fosc VDD TE RTC 50% 50% VSS tw Figure 6. Figure 7. TEST POINT DEVICE UNDER TEST OUTPUT CL* * Includes all probe and fixture capacitance. Figure 8. Test Circuit MC145026 MC145027 MC145028 3.2-268 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA OPERATING CHARACTERISTICS MC145026 The encoder serially transmits trinary data as defined by the state of the A1 - A5 and A6/D6 - A9/D9 input pins. These pins may be in either of three states (low, high, or open) allowing 19,683 possible codes. The transmit sequence is initiated by a low level on the TE input pin. Upon power-up, the MC145026 can continuously transmit as long as TE remains low (also, the device can transmit two-word sequences by pulsing TE low). However, no MC145026 application should be designed to rely upon the first data word transmitted immediately after power-up because this word may be invalid. Between the two data words, no signal is sent for three data periods (see Figure 10). Each transmitted trinary digit is encoded into pulses (see Figure 11). A logic 0 (low) is encoded as two consecutive short pulses, a logic 1 (high) as two consecutive long pulses, and an open (high impedance) as a long pulse followed by a short pulse. The input state is determined by using a weak "output" device to try to force each input high then low. If only a high state results from the two tests, the input is assumed to be hardwired to VDD. If only a low state is obtained, the input is assumed to be hardwired to VSS. If both a high and a low can be forced at an input, an open is assumed and is encoded as such. The "high" and "low" levels are 70% and 30% of the supply voltage as shown in the Electrical Characteristics table. The weak "output" device sinks/sources up to 110 A at a 5 V supply level, 500 A at 10 V, and 1 mA at 15 V. The TE input has an internal pull-up device so that a simple switch may be used to force the input low. While TE is high and the second-word transmission has timed out, the encoder is completely disabled, the oscillator is inhibited, and the current drain is reduced to quiescent current. When TE is brought low, the oscillator is started and the transmit sequence begins. The inputs are then sequentially selected, and determinations are made as to the input logic states. This information is serially transmitted via the Dout pin. MC145027 This decoder receives the serial data from the encoder and outputs the data, if it is valid. The transmitted data, consisting of two identical words, is examined bit by bit during reception. The first five trinary digits are assumed to be the address. If the received address matches the local address, the next four (data) bits are internally stored, but are not transferred to the output data latch. As the second encoded word is received, the address must again match. If a match occurs, the new data bits are checked against the previously stored data bits. If the two nibbles of data (four bits each) match, the data is transferred to the output data latch by VT and remains until new data replaces it. At the same time, the VT output pin is brought high and remains high until an error is received or until no input signal is received for four data periods (see Figure 10). Although the address information may be encoded in trinary, the data information must be either a 1 or 0. A trinary (open) data line is decoded as a logic 1. MC145028 This decoder operates in the same manner as the MC145027 except that nine address lines are used and no data output is available. The VT output is used to indicate that a valid address has been received. For transmission security, two identical transmitted words must be consecutively received before a VT output signal is issued. The MC145028 allows 19,683 addresses when trinary levels are used. 512 addresses are possible when binary levels are used. PIN DESCRIPTIONS MC145026 ENCODER A1 - A5, A6/D6 - A9/D9 Address, Address/Data Inputs (Pins 1 - 7, 9, and 10) These address/data inputs are encoded and the data is sent serially from the encoder via the Dout pin. RS, CTC, RTC (Pins 11, 12, and 13) These pins are part of the oscillator section of the encoder (see Figure 9). If an external signal source is used instead of the internal oscillator, it should be connected to the RS input and the RTC and CTC pins should be left open. TE Transmit Enable (Pin 14) This active-low transmit enable input initiates transmission when forced low. An internal pull-up device keeps this input normally high. The pull-up current is specified in the Electrical Characteristics table. Dout Data Out (Pin 15) This is the output of the encoder that serially presents the encoded data word. VSS Negative Power Supply (Pin 8) The most-negative supply potential. This pin is usually ground. VDD Positive Power Supply (Pin 16) The most-positive power supply pin. MC145027 AND MC145028 DECODERS A1 - A5, A1 - A9 Address Inputs (Pins 1 - 5) -- MC145027, Address Inputs (Pins 1 - 5, 15, 14, 13, 12) -- MC145028 These are the local address inputs. The states of these pins must match the appropriate encoder inputs for the VT pin to go high. The local address may be encoded with trinary or binary data. D6 - D9 Data Outputs (Pins 15, 14, 13, 12) -- MC145027 Only These outputs present the binary information that is on encoder inputs A6/D6 through A9/D9. Only binary data is MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145026 MC145027 MC145028 3.2-269 acknowledged; a trinary open at the MC145026 encoder is decoded as a high level (logic 1). Din Data In (Pin 9) This pin is the serial data input to the decoder. The input voltage must be at CMOS logic levels. The signal source driving this pin must be dc coupled. R1, C1 Resistor 1, Capacitor 1 (Pins 6, 7) As shown in Figures 2 and 3, these pins accept a resistor and capacitor that are used to determine whether a narrow pulse or wide pulse has been received. The time constant R1 x C1 should be set to 1.72 encoder clock periods: constant is used to determine whether the D in pin has remained low for four data periods (end of transmission). A separate on-chip comparator looks at the voltage-equivalent two data periods (0.4 R2 C2) to detect the dead time between received words within a transmission. VT Valid Transmission Output (Pin 11) This valid transmission output goes high after the second word of an encoding sequence when the following conditions are satisfied: 1. the received addresses of both words match the local decoder address, and 2. the received data bits of both words match. VT remains high until either a mismatch is received or no input signal is received for four data periods. R1 C1 = 3.95 RTC CTC VSS Negative Power Supply (Pin 8) R2/C2 Resistor 2/Capacitor 2 (Pin 10) As shown in Figures 2 and 3, this pin accepts a resistor and capacitor that are used to detect both the end of a received word and the end of a transmission. The time constant R2 x C2 should be 33.5 encoder clock periods (four data periods per Figure 11): R2 C2 = 77 RTC CTC. This time MC145026 MC145027 MC145028 3.2-270 The most-negative supply potential. This pin is usually ground. VDD Positive Power Supply (Pin 16) The most-positive power supply pin. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA RS CTC 11 RTC 12 13 INTERNAL ENABLE This oscillator operates at a frequency determined by the external RC network; i.e., f 1 2.3 RTC CTC The value for RS should be chosen to be 2 times RTC. This range ensures that current through RS is insignificant compared to current through RTC. The upper limit for RS must ensure that RS x 5 pF (input capacitance) is small compared to RTC x CTC. (Hz) for 1 kHz f 400 kHz where: CTC = CTC + Clayout + 12 pF For frequencies outside the indicated range, the formula is less accurate. The minimum recommended oscillation frequency of this circuit is 1 kHz. Susceptibility to externally induced noise signals may occur for frequencies below 1 kHz and/or when resistors utilized are greater than 1 M. RS 2 RTC RS 20 k RTC 10 k 400 pF < CTC < 15 F Figure 9. Encoder Oscillator Information ENCODER PWmin 2 WORD TRANSMISSION TE 1ST DIGIT 9TH DIGIT 184 182 180 178 122 120 118 116 114 90 88 86 84 82 80 30 28 26 24 22 20 18 16 6 4 2 ENCODER OSCILLATOR (PIN 12) CONTINUOUS TRANSMISSION 9TH DIGIT 1ST DIGIT Dout (PIN 15) HIGH OPEN LOW 1ST WORD 2ND WORD ENCODING SEQUENCE DECODER 1.1 (R2C2) VT (PIN 11) DATA OUTPUTS Figure 10. Timing Diagram MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145026 MC145027 MC145028 3.2-271 ENCODER OSCILLATOR (PIN 12) ENCODED "ONE" Dout (PIN 15) ENCODED "ZERO" ENCODED "OPEN" DATA PERIOD Figure 11. Encoder Data Waveforms f max (kHz) (REF. TO ENCODER CLOCK) 500 400 VDD = 15 V VDD = 10 V 300 200 VDD = 5 V 100 10 20 30 40 50 Clayout (pF) ON PINS 1 - 5 (MC145027); PINS 1 - 5 AND 12 - 15 (MC145028) Figure 12. fmax vs Clayout -- Decoders Only MC145026 MC145027 MC145028 3.2-272 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NO HAS THE TRANSMISSION BEGUN? YES DOES THE 5-BIT ADDRESS MATCH THE ADDRESS PINS? NO DISABLE VT ON THE 1ST ADDRESS MISMATCH YES STORE THE 4-BIT DATA DOES THIS DATA MATCH THE PREVIOUSLY STORED DATA? NO DISABLE VT ON THE 1ST DATA MISMATCH YES IS THIS AT LEAST THE 2ND CONSECUTIVE MATCH SINCE VT DISABLE? NO YES LATCH DATA ONTO OUTPUT PINS AND ACTIVATE VT HAVE 4-BIT TIMES PASSED? YES DISABLE VT NO NO HAS A NEW TRANSMISSION BEGUN? YES Figure 13. MC145027 Flowchart MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145026 MC145027 MC145028 3.2-273 HAS THE TRANSMISSION BEGUN? NO YES DOES THE ADDRESS MATCH THE ADDRESS PINS? NO DISABLE VT ON THE 1ST ADDRESS MISMATCH AND IGNORE THE REST OF THIS WORD YES IS THIS AT LEAST THE 2ND CONSECUTIVE MATCH SINCE VT DISABLE? NO YES ACTIVATE VT HAVE 4-BIT TIMES PASSED? YES DISABLE VT NO NO HAS A NEW TRANSMISSION BEGUN? YES Figure 14. MC145028 Flowchart MC145026 MC145027 MC145028 3.2-274 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA VDD MC145027 AND MC145028 TIMING To verify the MC145027 or MC145028 timing, check the waveforms on C1 (Pin 7) and R2/C2 (Pin 10) as compared to the incoming data waveform on Din (Pin 9). The R-C decay seen on C1 discharges down to 1/3 VDD before being reset to VDD. This point of reset (labelled "DOS" in Figure 15) is the point in time where the decision is made whether the data seen on Din is a 1 or 0. DOS should not be too close to the Din data edges or intermittent operation may occur. The other timing to be checked on the MC145027 and MC145028 is on R2/C2 (see Figure 16). The R-C decay is continually reset to VDD as data is being transmitted. Only between words and after the end-of-transmission (EOT) does R2/C2 decay significantly from VDD. R2/C2 can be used to identify the internal end-of-word (EOW) timing edge which is generated when R2/C2 decays to 2/3 VDD. The internal EOT timing edge occurs when R2/C2 decays to 1/3 VDD. When the waveform is being observed, the R-C decay should go down between the 2/3 and 1/3 VDD levels, but not too close to either level before data transmission on Din resumes. Verification of the timing described above should ensure a good match between the MC145026 transmitter and the MC145027 and MC145028 receivers. Din 0V VDD 2/3 C1 1/3 0V DOS DOS Figure 15. R-C Decay on Pin 7 (C1) EOW VDD 2/3 R2/C2 1/3 0V EOT Figure 16. R-C Decay on Pin 10 (R2/C2) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145026 MC145027 MC145028 3.2-275 VDD TE VDD VDD A1 A2 5 TRINARY ADDRESSES A3 A4 A5 D6 4-BIT BINARY DATA D7 D8 14 16 A1 16 15 Dout 1 2 3 4 5 6 7 9 10 VDD 0.1 F 0.1 F Din 9 6 R1 MC145026 13 7 RTC 12 CTC 10 11 D9 RS 8 MC145027 C1 R2 1 2 3 4 5 15 14 13 12 11 A2 A3 A4 5 TRINARY ADDRESSES A5 D6 D7 D8 D9 VT C2 8 CTC = CTC + Clayout + 12 pF 100 pF CTC 15 F RTC 10 k; RS 2 RTC R1 10 k C1 400 pF R2 100 k C2 700 pF 1 fosc = 2.3 RTCCTC R1C1 = 3.95 RTCCTC R2C2 = 77 RTCCTC REPEAT OF ABOVE REPEAT OF ABOVE Example R/C Values (All Resistors and Capacitors are 5%) (CTC = CTC + 20 pF) fosc (kHz) RTC CTC RS R1 C1 R2 C2 362 181 88.7 42.6 21.5 8.53 1.71 10 k 10 k 10 k 10 k 10 k 10 k 50 k 120 pF 240 pF 490 pF 1020 pF 2020 pF 5100 pF 5100 pF 20 k 20 k 20 k 20 k 20 k 20 k 100 k 10 k 10 k 10 k 10 k 10 k 10 k 50 k 470 pF 910 pF 2000 pF 3900 pF 8200 pF 0.02 F 0.02 F 100 k 100 k 100 k 100 k 100 k 200 k 200 k 910 pF 1800 pF 3900 pF 7500 pF 0.015 F 0.02 F 0.1 F Figure 17. Typical Application MC145026 MC145027 MC145028 3.2-276 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA APPLICATIONS INFORMATION INFRARED TRANSMITTER In Figure 18, the MC145026 encoder is set to run at an oscillator frequency of about 4 to 9 kHz. Thus, the time required for a complete two-word encoding sequence is about 20 to 40 ms. The data output from the encoder gates an RC oscillator running at 50 kHz; the oscillator shown starts rapidly enough to be used in this application. When the "send" button is not depressed, both the MC145026 and oscillator are in a low-power standby state. The RC oscillator has to be trimmed for 50 kHz and has some drawbacks for frequency stability. A superior system uses a ceramic resonator oscillator running at 400 kHz. This oscillator feeds a divider as shown in Figure 19. The unused inputs of the MC14011UB must be grounded. The MLED81 IRED is driven with the 50 kHz square wave at about 200 to 300 mA to generate the carrier. If desired, two IREDs wired in series can be used (see Application Note AN1016 for more information). The bipolar IRED switch, shown in Figure 18, offers two advantages over a FET. First, a logic FET has too much gate capacitance for the MC14011UB to drive without waveform distortion. Second, the bipolar drive permits lower supply voltages, which are an advantage in portable battery-powered applications. The configuration shown in Figure 18 operates over a supply range of 4.5 to 18 V. A low-voltage system which operates down to 2.5 V could be realized if the oscillator section of a MC74HC4060 is used in place of the MC14011UB. The data output of the MC145026 is inverted and fed to the RESET pin of the MC74HC4060. Alternately, the MC74HCU04 could be used for the oscillator. Information on the MC14011UB is in book number DL131/D. The MC74HCU04 and MC74HC4060 are found in book number DL129/D. INFRARED RECEIVER The receiver in Figure 20 couples an IR-sensitive diode to input preamp A1, followed by band-pass amplifier A2 with a gain of about 10. Limiting stage A3 follows, with an output of about 800 mV p-p. The limited 50 kHz burst is detected by comparator A4 that passes only positive pulses, and peak- detected and filtered by a diode/RC network to extract the data envelope from the burst. Comparator A5 boosts the signal to logic levels compatible with the MC145027/28 data input. The Din pin of these decoders is a standard CMOS high-impedance input which must not be allowed to float. Therefore, direct coupling from A5 to the decoder input is utilized. Shielding should be used on at least A1 and A2, with good ground and high-sensitivity circuit layout techniques applied. For operation with supplies higher than + 5 V, limiter A4's positive output swing needs to be limited to 3 to 5 V. This is accomplished via adding a zener diode in the negative feedback path, thus avoiding excessive system noise. The biasing resistor stack should be adjusted such that V3 is 1.25 to 1.5 V. This system works up to a range of about 10 meters. The gains of the system may be adjusted to suit the individual design needs. The 100 resistor in the emitter of the first 2N5088 and the 1 k resistor feeding A2 may be altered if different gain is required. In general, more gain does not necessarily result in increased range. This is due to noise floor limitations. The designer should increase transmitter power and/or increase receiver aperature with Fresnal lensing to greatly improve range. See Application Note AN1016 for additional information. Information on the MC34074 is in data book DL128/D. TRINARY SWITCH MANUFACTURERS Midland Ross-Electronic Connector Div. Greyhill Augat/Alcoswitch Aries Electronics The above companies may not have the switches in a DIP. For more information, call them or consult eem Electronic Engineers Master Catalog or the Gold Book. Ask for SPDT with center OFF. Alternative: An SPST can be placed in series between a SPDT and the Encoder or Decoder to achieve trinary action. Motorola cannot recommend one supplier over another and in no way suggests that this is a complete listing of trinary switch manufacturers. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145026 MC145027 MC145028 3.2-277 V+ SELECT FOR 200 mA TO 300 mA MLED81 USE OF 2 MLED81s IS OPTIONAL MC14011UB 10 k MPSA13 OR MPSW13 SEND MC14011UB Dout TE MC145026 RS CTC RTC SWITCHES 220 k 0.01 F 220 k 1000 pF 9 ADJUST/SELECT FOR f = 50 kHz (APPROX. 100 k) 100 k FOR APPROX. 4 kHz 47 k FOR APPROX. 9 kHz Figure 18. IRED Transmitter Using RC Oscillator to Generate Carrier Frequency V+ MC14011UB MC14024 CLK Q3 RESET 50 kHZ TO DRIVER TRANSISTOR 1M X1 = 400 kHz CERAMIC RESONATOR PANASONIC EFD-A400K04B OR EQUIVALENT X1 470 pF 470 pF V+ MC14011UB Dout FROM MC145026 Figure 19. Using a Ceramic Resonator to Generate Carrier Frequency MC145026 MC145027 MC145028 3.2-278 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA +5 V 10 k 10 F A1 1 mH -- TOKO TYPE 7PA OR 10PA OR EQUIVALENT 10 F 10 k 22 k 0.01 F 2N5088 2N5086 2N5088 EE EE 0.01 F 1 k 10 k - A2 100 OPTICAL FILTER 6.8 k V1 2.2 k + 1/4 MC34074 1 F 1N914 0.01 F 4.7 k 1N914 1 M 100 k 1 M - 10 k A3 V1 1N914 + + 1 k 22 k + A4 - V2 1/4 MC34074 A5 1/4 MC34074 1000 pF 47 k V3 - 1/4 MC34074 +5 V 390 k FOR APPROX. 4 kHz 180 k FOR APPROX. 9 kHz 1000 pF 0.01 F 750 k FOR APPROX. 4 kHz 360 k FOR APPROX. 9 kHz 4.7 k R1 C1 MC145027/28 Din VDD +5 V V2 2.7 V R2/C2 VSS 390 VT V1 2.5 V 4 DATA OUT MC145027 ONLY 9 FOR MC145027 5 FOR MC145028 2.2 k 10 F 10 F V3 1.3 V 10 F 2.7 k ADDRESS SWITCHES Figure 20. Infrared Receiver MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145026 MC145027 MC145028 3.2-279 DATA SHEETS 3.2-280 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Chapter Four Frequency Synthesis Section One . . . . . . . . . . . 4.1-0 Frequency Synthesis - Selector Guide Section Two . . . . . . . . . . . 4.2-0 Frequency Synthesis - Data Sheets MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 4.0-1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 4.0-2 Section One Selector Guide Frequency Synthesis Table of Contents PLL Synthesizers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Dual . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PLL Building Blocks . . . . . . . . . . . . . . . . . . . . . . . . . . . . Prescalers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Voltage Control Oscillators . . . . . . . . . . . . . . . . . . . . Phase-Frequency Detectors . . . . . . . . . . . . . . . . . . Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Page 4.1-2 4.1-2 4.1-2 4.1-3 4.1-3 4.1-3 4.1-3 4.1-4 SELECTOR GUIDE 4.1-1 Frequency Synthesis Single PLL Synthesizers Maximum Frequency (MHz) Supply Voltage (V) Nominal Supply Current (mA) 20 @ 5.0 V 3.0 to 9.0 7.5 @ 5 V 20 @ 5.0 V 3.0 to 9.0 7.5 @ 5 V 20 @ 5.0 V 3.0 to 9.0 20 @ 5.0 V 3.0 to 9.0 100 @ 3.0 V 185 @ 4.5 V 2.7 to 5.5 1100 Device Suffix/ Case Parallel Interface MC145151-2 DW/751F Parallel Interface, Uses External Dual-Modulus Prescaler MC145152-2 DW/751F 7.5 @ 5 V Serial Interface MC145157-2 DW/751G 7.5 @ 5 V Serial Interface, Uses External Dual-Modulus Prescaler MC145158-2 DW/751G 2@3V 6@5V Serial Interface, Auxiliary Reference Divider, Evaluation Kit - MC145170EVK MC145170-2 P/648, D/751B, DT/948C 2.7 to 5.5 7@5V Serial Interface, Standby, Auxiliary Reference Divider, Evaluation Kit - MC145193EVK MC145193 F/751J, DT/948D 2000 2.7 to 5.5 4@3V Serial Interface, Standby, Auxiliary Reference Device, Evaluation Kit - MC145202-1EVK MC145202-1 F/751J, DT/948D 2500 2.7 to 5.5 9.5 Serial Interface MC12210 D/751B, DT/948E 2800 4.5 to 5.5 3.5 Fixed Divider MC12179 D/751 Device Suffix/ Case Features Dual PLL Synthesizers Maximum Frequency (MHz) Supply Voltage (V) Nominal Supply Current (mA) 1100 both loops 2.7 to 5.5 12 SELECTOR GUIDE 4.1-2 Phase Detector Serial Interface, Standby, Evaluation Kit - MC145220EVK MC145220 F/803C, DT/948D MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA PLL Building Blocks Prescalers Single or Dual Modulus Frequency (MHz) Divide Ratios 1100 64/65, 128/129 Dual 1100 10,20,40,80 1100 2000 Supply Voltage (V) Supply Current (mA) Features Device Suffix/ Case 2.7 to 5.5 2.0 max Low Power MC12052A D/751 Single 4.5 to 5.5 5.0 max MC12080 D/751 2, 4, 8 Single 2.7 to 5.5 4.5 max Standby MC12093 D/751 64/65, 128/129 Dual 2.7 to 5.5 2.6 max Low Power MC12054A D/751 2500 2, 4 Single 2.7 to 5.5 14 max Standby MC12095 D/751 2800 64, 128, 256 Single 4.5 to 5.5 11.5 max MC12079 D/751 Voltage Control Oscillators Frequency (MHz) Supply Voltage (V) 1300 2.7 to 5.5 Features Device Suffix/ Case Two high drive open collector outputs (Q, QB), Adjustable output amplitude, Low drive output for prescaler MC12149 D/751 Phase-Frequency Detectors Frequency (MHz) Supply Voltage (V) Features Device Suffix/ Case 800 (Typ) 4.75 to 5.5 MECL10H compatible MCH12140 D/751 800 (Typ) 4.2 to 5.5 100K ECL compatible MCK12140 D/751 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA SELECTOR GUIDE 4.1-3 Frequency Synthesis Packages CASE 648 P SUFFIX (DIP-16) CASE 751 D SUFFIX (SO-8) CASE 751J F SUFFIX (SO-20) CASE 803C F SUFFIX (SO-20) CASE 948D DT SUFFIX (TSSOP-20) SELECTOR GUIDE 4.1-4 CASE 751B D SUFFIX (SO-16) CASE 751G DW SUFFIX (SO-16W) CASE 948C DT SUFFIX (TSSOP-16) CASE 948E DT SUFFIX (TSSOP-20HS) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Section Two Frequency Synthesis - Data Sheets Device Number Page Number Device Number PLL Synthesizers PLL Building Blocks Single Prescalers Page Number MC12026A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-3 MC12179 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-54 MC12038A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-8 MC12210 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-64 MC12052A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-12 MC145151-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-78 MC12054A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-15 MC145152-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-81 MC12079 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-17 MC145157-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-85 MC12080 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-20 MC145158-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-88 MC12093 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-23 MC145170-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-100 MC12095 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-25 MC145193 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-124 MC145202-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-146 VCOs MC12147 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-29 Dual MC12148 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-40 MC145220 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-168 MC12149 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-43 Evaluation Kit Technical Summaries MC145220EVK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-193 Phase Frequency Detectors MCH12140 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-74 MCK12140 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-74 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA DATA SHEETS 4.2-1 DATA SHEETS 4.2-2 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12026A MC12026B 1.1 GHz Dual Modulus Prescaler The MC12026 is a high frequency, low voltage dual modulus prescaler used in phase-locked loop (PLL) applications. The MC12026A can be used with CMOS synthesizers requiring positive edges to trigger internal counters such as Motorola's MC145xxx series in a PLL to provide tuning signals up to 1.1 GHz in programmable frequency steps. The MC12026B can be used with CMOS synthesizers requiring negative edges to trigger internal counters. A Divide Ratio Control (SW) permits selection of an 8/9 or 16/17 divide ratio as desired. The Modulus Control (MC) selects the proper divide number after SW has been biased to select the desired divide ratio. NOTE: The "B" Version Is Not Recommended for New Designs * * * * * * * MECL PLL COMPONENTS /8/9, /16/17 DUAL MODULUS PRESCALER SEMICONDUCTOR TECHNICAL DATA 8 1 1.1 GHz Toggle Frequency Supply Voltage 4.5 to 5.5 V Low Power 4.0 mA Typical D SUFFIX PLASTIC PACKAGE CASE 751 (SO-8) Operating Temperature Range of -40 to 85C The MC12026 is Pin Compatible With the MC12022 Short Setup Time (tset ) 6ns Typical @ 1.1 GHz Modulus Control Input Level is Compatible With Standard CMOS and TTL MC12026A IS NOT RECOMMENDED FOR NEW DESIGN DEVICE TO BE PHASED OUT. No replacement available. MC12026B is on Life Time Buy PIN CONNECTIONS IN VCC SW OUT FUNCTIONAL TABLE SW MC Divide Ratio H H 8 H L 9 L H 16 L L 17 MAXIMUM RATINGS Range Unit VCC -0.5 to 7.0 Vdc TA -40 to 85 C Storage Temperature Range Tstg -65 to 150 C Modulus Control Input, Pin 6 MC -0.5 to 6.5 Vdc Maximum Output Current, Pin 4 IO 10.0 mA Operating Temperature Range NOTE: 7 3 6 4 5 IN NC MC Gnd ORDERING INFORMATION Device Symbol Power Supply Voltage, Pin 2 8 2 (Top View) NOTES: 1. SW: H = VCC, L = Open. A logic L can also be applied by grouunding this pin, but this is not recommended due to increased power soncumption. 2. MC: H = 2.0 V to VCC, L = GND to 0.8 V. Characteristics 1 MC12026AD MC12026BD Operating Temp Range TA =-40 to 85C Package SO-8 ESD data available upon request. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12026A MC12026B 4.2-3 MC12026A MC12026B ELECTRICAL CHARACTERISTICS (VCC = 4.5 to 5.5; TA = -40 to 85C, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit ft 0.1 1.4 1.1 GHz Supply Current Output Unloaded (Pin 2) ICC - 4.0 5.3 mA Modulus Control Input High (MC) VIH1 2.0 - VCC V Modulus Control Input Low (MC) VIL1 GND - 0.8 V Divide Ratio Control Input High (SW) VIH2 VCC - 0.5 V VCC VCC + 0.5 V V Divide Ratio Control Input Low (SW) VIL2 OPEN OPEN OPEN - Output Voltage Swing (RL = 560 ; IO = 5.5 mA)1 (RL = 1.1 k; IO = 2.9 mA)2 Vout 1.0 1.6 - Vpp Modulus Setup Time MC to Out3 tSET - 6 9 ns 400 100 - - 1000 1000 Toggle Frequency (Sin Wave) Input Voltage Sensitivity 100-25 0MHz 250-1100 MHz notes: Vin mVpp 1. Divide Ratio of /8/9 at 1.1 GHz, CL = 8.0 pF 2. Divide Ratio of /16/17 at 1.1 GHz, CL = 8.0 pF 3. Assuming RL = 560 at 1.1 GHz Figure 1. Logic Diagram (MC12026A) In In D Q D Q C QB C QB D Q QB C M MC 1 D QB D QB C Q C Q 0 SW Out Figure 2. Modulus Setup Time Prop. Delay In Out MC Setup MC MC Release Modulus setup time MC to out is the MC setup or MC release plus the prop delay. MC12026A MC12026B 4.2-4 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12026A MC12026B Figure 3. AC Test Circuit VCC = 4.5 to 5.5V C3 SINE WAVE GENERATOR C1 VCC SW IN 50 OUT C2 RL IN MC CL GND EXTERNAL COMPONENTS C1 = C2 = 1000 pF C3 = 0.1F CL = 8pF (Including Scope and Jig Capacitance) RL = 560 (for /8/9 at 1.1GHz) MC INPUT Figure 4. Input Signal Amplitude versus Input Frequency +15.0 +1257.40 +10.0 +707.11 EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE 0 +223.61 OPERATING WINDOW -5.0 AMPLITUDE (dBm) +397.64 -10.0 -15.0 -20.0 +125.74 +70.71 +39.76 +22.36 -25.0 +12.57 -30.0 +7.07 -35.0 +3.98 -40.0 +2.24 -45.0 +1.26 -50.0 0 200 400 600 800 1000 1200 1400 1600 mVrms +5.0 +0.71 1800 FREQUENCY (MHz) Divide Ratio = 8; VCC = 5.0 V; TA = 25C Figure 5. Output Amplitude versus Input Frequency 2000 1200 800 mVpp 1600 400 0 200 400 600 800 1000 1200 1400 1600 0 1800 FREQUENCY (MHz) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12026A MC12026B 4.2-5 MC12026A MC12026B Figure 6. Typical Output Waveform 5.88V 880mV 36.6ns 86.6ns (/8, 1.1 GHz Input Frequency, VCC = 5.0, TA = 25C, Output Loaded With 8.0pF) MC12026A MC12026B 4.2-6 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12026A MC12026B Figure 7. Typical Input Impedance versus Input Frequency 200 150 R 100 MHz 50 0 -50 OHMS -100 -150 -200 -250 -300 -350 -400 -450 jX -500 -550 -600 -650 100 200 300 400 500 600 700 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 800 900 1000 1100 1200 MC12026A MC12026B 4.2-7 MC12038A 1.1 GHz Low Power Dual Modulus Prescaler The MC12038A can be used with CMOS synthesizers requiring positive edges to trigger internal counters such as Motorola's MC145XXX series in a PLL to provide tuning signals up to 1.1 GHz in programmable frequency steps. A Divide Ratio Control (SW) permits selection of a 127/128 or 255/256 divide ratio as desired. The Modulus Control (MC) selects the proper divide number after SW has been biased to select the desired divide ratio. * 1.1 GHz Toggle Frequency * * * * * * MECL PLL COMPONENTS /127/128, /255/256 DUAL MODULUS PRESCALER SEMICONDUCTOR TECHNICAL DATA Supply Voltage of 4.5 to 5.5 V Low-Power 4.8 mA Typical Operating Temperature Range of -40 to 85C 8 Short Setup Time (tset) 16ns Maximum @ 1.1 GHz 1 Modulus Control Input Level Is Compatible With Standard CMOS and TTL On-Chip Output Termination D SUFFIX PLASTIC PACKAGE CASE 751 (SO-8) NOT RECOMMENDED FOR NEW DESIGN DEVICE TO BE PHASED OUT. No replacement available. FUNCTIONAL TABLE SW MC Divide Ratio H H 127 H L 128 L H 255 L L 256 PIN CONNECTIONS IN VCC SW OUT NOTES: 1. SW: H = VCC, L = Open. A logic L can also be applied by grounding this pin, but this is not recommended due to increased power consumption. 2. MC: H = 2.0 V to VCC, L = GND to 0.8 V. 1 8 2 7 3 6 4 5 IN NC MC Gnd (Top View) DESIGN GUIDE Criteria Value Unit Internal Gate Count* 67 ea Internal Gate Propagation Delay 200 ps Internal Gate Power Dissipation 0.75 mW Speed Power Product 0.15 pJ NOTE: ORDERING INFORMATION Device MC12038AD Operating Temperature Range Package TA = - 40 to 85C SO-8 * Equivalent to a two-input NAND gate MAXIMUM RATINGS Characteristic Power Supply Voltage, Pin 2 Symbol Range Unit VCC -0.5 to 7.0 Vdc TA -40 to 85 C Storage Temperature Range Tstg -65 to 150 C Modulus Control Input, Pin 6 MC -0.5 to 6.5 Vdc Operating Temperature Range NOTE: ESD data available upon request. MC12038A 4.2-8 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12038A ELECTRICAL CHARACTERISTICS (VCC = 4.5 to 5.5V; TA = -40 to 85C, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit ft 0.1 1.4 1.1 GHz Supply Current Output Unloaded (Pin 2) at 5.0 Vdc ICC - 4.8 6.5 mA Modulus Control Input High (MC) VIH1 2.0 - VCC V Toggle Frequency (Sine Wave Input) Modulus Control Input Low (MC) VIL1 - - 0.8 V Divide Ratio Control Input High (SW) VIH2 VCC VCC VCC Vdc Divide Ratio Control Input Low (SW) VIL2 Open Open Open - Output Voltage Swing (CL = 8.0 pF) Vout 1.0 1.6 - Vpp Modulus Setup Time MC to Out tset - 11 16 ns Vin(min) 100 400 - - 1500 1500 mVpp Input Voltage Sensitivity 250-1100 MHz 100-250 MHz Figure 1. Logic Diagram (MC12038A) D Q D Q D B A Figure 2. Modulus Setup Time Q Prop. Delay C In QB C QB C QB C M In In Out MC MC Setup D Q D QB C D C QB D E Q D QB C F Q C QB D G H Q MC QB C S Q MC Release Out Modulus setup time MC to out is the MC setup or MC release plus the prop delay. SW Figure 3. Typical Output Waveforms 500 m 20 ns (/128, 1.1 GHz Input Frequency, VCC = 5.0 V, TA = 25C, Output Loaded) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12038A 4.2-9 MC12038A Figure 4. AC Test Circuit VCC = 4.5 to 5.5 Vdc C3 Sine Wave Generator C1 VCC SW IN 50 OUT C2 CL IN MC EXTERNAL COMPONENTS C1 = C2 = 1000 pF C3 = 0.1 F CL = 8.0 pF (Including Scope and jig capacitance) GND MC Input +1250 +10.0 +710 +5.0 +400 0 +225 -5.0 +125 -10.0 +71.0 -15.0 +40.0 -20.0 +22.5 -25.0 +12.8 -30.0 +7.1 -35.0 +4.0 -40.0 +2.25 -45.0 +1.25 -50.0 0 250 500 750 1000 1250 mVrms AMPLITUDE (dBm) Figure 5. Input Signal Amplitude versus Input Frequency +15.0 +0.71 1500 FREQUENCY (MHz) Divide Ratio = 128; VCC = 5.0 V; TA = 25C Figure 6. Output Amplitude versus Input Frequency 5000 3000 2000 mVpp 4000 1000 0 250 500 750 1000 1250 0 1500 FREQUENCY (MHz) MC12038A 4.2-10 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12038A Figure 7. Typical Input Impedance versus Input Frequency 200 150 R 100 MHz 50 0 -50 OHMS -100 -150 -200 -250 -300 -350 -400 -450 jX -500 -550 -600 -650 100 200 300 400 500 600 700 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 800 900 1000 1100 1200 MC12038A 4.2-11 MC12052A 1.1 GHz Super Low Power Dual Modulus Prescaler The MC12052A is a super low power dual modulus prescaler used in phase-locked loop applications. Motorola's advanced Bipolar MOSAIC V technology is utilized to achieve low power dissipation of 2.7 mW at a minimum supply voltage of 2.7 V. The MC12052A can be used with CMOS synthesizers requiring positive edges to trigger internal counters such as Motorola's MC145XXX series in a PLL to provide tuning signals up to 1.1 GHz in programmable frequency steps. A Divide Ratio Control (SW) permits selection of a 64/65 or 128/129 divide ratio as desired. The Modulus Control (MC) selects the proper divide number after SW has been biased to select the desired divide ratio. * 1.1 GHz Toggle Frequency * * * * * * MECL PLL COMPONENTS /64/65, /128/129 LOW POWER DUAL MODULUS PRESCALER SEMICONDUCTOR TECHNICAL DATA 8 The MC12052 is Pin and Functionally Compatible with the MC12022 1 Low Power 1.0 mA Typical 2.0 mA Maximum, -40 to 85C, VCC = 2.7 to 5.5 Vdc Short Setup Time (tset) 16 ns Maximum @ 1.1 GHz D SUFFIX PLASTIC PACKAGE CASE 751 (SO-8) Modulus Control Input Level is Compatible with Standard CMOS and TTL Maximum Input Voltage Should Be Limited to 6.5 Vdc MOSAIC V is a trademark of Motorola PIN CONNECTIONS FUNCTIONAL TABLE SW MC Divide Ratio H H 64 H L 65 L H 128 L L 129 IN VCC SW OUT 1 8 2 7 3 6 4 5 IN NC MC Gnd (Top View) NOTES: 1. SW: H = VCC, L = Open. A logic L can also be applied by grounding this pin, but this is not recommended due to increased power consumption. 2. MC: H = 2.0 V to VCC, L = GND to 0.8 V. MAXIMUM RATINGS Characteristic Symbol Range Unit VCC -0.5 to 7.0 Vdc TA -40 to 85 C Storage Temperature Range Tstg -65 to 150 C Device Operating Temp Range Package Modulus Control Input, Pin 6 MC -0.5 to 6.5 Vdc MC12052AD TA =-40 to 85C SO-8 Power Supply Voltage, Pin 2 Operating Temperature Range MC12052A 4.2-12 ORDERING INFORMATION MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12052A ELECTRICAL CHARACTERISTICS (VCC = 2.7 to 5.5 VDC, TA = -40 to 85C, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit ft 0.1 1.4 1.1 GHz ICC VIH1 VIL1 - 1.0 2.0 mA 2.0 - V Gnd - VCC + 0.5 V 0.8 VIH2 VIL2 VCC - 0.5 V Open VCC Open VCC + 0.5 V Open VDC Output Voltage Swing (Note 2) (CL = 8.0 pF, RL = 3.3 k) Vout 0.8 1.1 - VPP Modulus Setup Time MC to Out @ 1100 MHz tset Vin - 11 16 ns 100 400 - - 1000 1000 mVPP - - 0.5 0.5 3.0 3.0 Toggle Frequency (Sine Wave Input) Supply Current (Pin 2) Modulus Control Input High (MC) Modulus Control Input Low (MC) Divide Ratio Control Input High (SW) Divide Ratio Control Input Low (SW) Input Voltage Sensitivity 250-1100 MHz 100-250 MHz Output Current (Note 1) VCC = 2.7 V, CL = 8.0 pF, RL = 3.3 k VCC = 5.0 V, CL = 8.0 pF, RL = 7.2 k V - IO mA NOTES: 1. Divide ratio of /64/65 @ 1.1 GHz 2. Valid over voltage range 2.7 to 5.5 V; RL = 3.3 k @ VCC = 2.7 V; RL = 7.2 k @ VCC = 5.0 V Figure 1. Logic Diagram (MC12052A) D Q D Q D B A Figure 2. Modulus Setup Time Q Prop. Delay C In QB C QB C C M QB In In Out MC MC Setup D Q D QB C D C QB D E Q D QB C F Q C QB D G H C S Q Q MC QB MC Release Out Modulus setup time MC to out is the MC setup or MC release plus the prop delay. SW Figure 3. AC Test Circuit VCC = 2.7 to 5.5 V C3 Sine Wave Generator C1 VCC SW IN 50 OUT C2 CL IN RL MC GND MC Input MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA EXTERNAL COMPONENTS C1 = C2 = 1000 pF C3 = 0.1 F CL = 8.0pF (Including Scope and jig capacitance) RL = 3.3 k @ VCC = 2.7 V RL = 7.2 k @ VCC = 5.0 V MC12052A 4.2-13 MC12052A Figure 4. Typical Input Impedance versus Input Frequency 300 200 R 100 MHz 0 -100 -200 OHMS -300 -400 -500 -600 -700 -800 jX -900 -1000 -1100 -1200 100 MC12052A 4.2-14 200 300 400 500 600 700 800 900 1000 1100 1200 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12054A 2.0 GHz Super Low Power Dual Modulus Prescaler The MC12054A is a super low power dual modulus prescaler used in phase-locked loop applications. Motorola's advanced Bipolar MOSAIC V technology is utilized to achieve low power dissipation of 5.4 mW at a minimum supply voltage of 2.7 V. The MC12054A can be used with CMOS synthesizers requiring positive edges to trigger internal counters such as Motorola's MC145XXX series in a PLL to provide tuning signals up to 2.0 GHz in programmable frequency steps. A Divide Ratio Control (SW) permits selection of a 64/65 or 128/129 divide ratio as desired. The Modulus Control (MC) selects the proper divide number after SW has been biased to select the desired divide ratio. * 2.0 GHz Toggle Frequency * * * * * * MECL PLL COMPONENTS /64/65, /128/129 LOW POWER DUAL MODULUS PRESCALER SEMICONDUCTOR TECHNICAL DATA 8 1 The MC12054 is Pin and Functionally Compatible with the MC12031 Low Power 2.0 mA Typical 2.6mA Maximum, -40 to 85C, VCC = 2.7 to 5.5 Vdc D SUFFIX PLASTIC PACKAGE CASE 751 (SO-8) Short Setup Time (tset) 10ns Maximum @ 2.0 GHz Modulus Control Input Level is Compatible with Standard CMOS and TTL Maximum Input Voltage Should Be Limited to 6.5 Vdc MOSAIC V is a trademark of Motorola PIN CONNECTIONS FUNCTIONAL TABLE SW MC IN VCC SW OUT Divide Ratio H H 64 H L 65 L H 128 L L 129 1 8 2 7 3 6 4 5 IN NC MC Gnd (Top View) NOTES: 1. SW: H = VCC, L = Open. A logic L can also be applied by grounding this pin, but this is not recommended due to increased power consumption. 2. MC: H = 2.0 V to VCC, L = GND to 0.8 V. MAXIMUM RATINGS Characteristic Symbol Range Unit VCC -0.5 to 7.0 Vdc TA -40 to 85 C Storage Temperature Range Tstg -65 to 150 C Device Operating Temp Range Package Modulus Control Input, Pin 6 MC -0.5 to 6.5 Vdc MC12054AD TA = -40 to 85C SO-8 Power Supply Voltage, Pin 2 Operating Temperature Range NOTE: ORDERING INFORMATION ESD data available upon request. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12054A 4.2-15 MC12054A ELECTRICAL CHARACTERISTICS (VCC = 2.7 to 5.5 Vdc, TA = -40 to 85C, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit ft 0.1 2.5 2.0 GHz ICC VIH1 VIL1 - 2.0 2.6 mA 2.0 - V Gnd - VCC + 0.5 V 0.8 VIH2 VIL2 VCC - 0.5 V Open VCC Open VCC + 0.5 V Open VDC Divide Ratio Control Input Low (SW) Output Voltage Swing (Note 2) (CL = 8.0 pF, RL = 1.65 k) Modulus Setup Time MC to Out @ 2000 MHz Vout tset 0.8 1.1 - - 8.0 10 Vpp ns Input Voltage Sensitivity 250-2000 MHz 100-250 MHz Vin 100 400 - - 1000 1000 Output Current (Note 1) VCC = 2.7 V, CL = 8.0 pF, RL = 1.65 k VCC = 5.0 V, CL = 8.0 pF, RL = 3.6 k IO - - 1.0 1.0 4.0 4.0 Toggle Frequency (Sine Wave Input) Supply Current (Pin 2) Modulus Control Input High (MC) Modulus Control Input Low (MC) Divide Ratio Control Input High (SW) V - mVpp mA NOTES: 1. Divide ratio of /64/65 @ 2.0 GHz 2. Valid over voltage range 2.7 to 5.5 V; RL = 1.65 k @ VCC = 2.7 V; RL = 3.6 k @ VCC = 5.0 V Figure 1. Logic Diagram (MC12054A) D Q D Q D B A Figure 2. Modulus Setup Time Q Prop. Delay C In QB C QB C C M QB In In Out MC MC Setup D Q D QB C D C QB D E Q D QB C F Q C QB D G H C S Q Q MC QB MC Release Out Modulus setup time MC to out is the MC setup or MC release plus the prop delay. SW Figure 3. AC Test Circuit VCC = 2.7 to 5.5 V C3 Sine Wave Generator C1 VCC 50 OUT C2 CL IN RL MC MC Input MC12054A 4.2-16 SW IN GND EXTERNAL COMPONENTS C1 = C2 = 1000 pF C3 = 0.1 F CL = 8.0 pF (Including Scope and jig capacitance) RL = 1.65 k @ VCC = 2.7 V RL = 3.6 k @ VCC = 5.0 V MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12079 2.8 GHz Prescaler The MC12079 is a single modulus divide by 64, 128, 256 prescaler for low power frequency division of a 2.8 GHz (typical) high frequency input signal. Divide ratio control inputs SW1 and SW2 select the required divide ratio of /64, /128, or /256. An external load resistor is required to terminate the output. A 1.2 k resistor is recommended to achieve a 1.6 Vpp output swing, when dividing a 1.1 GHz input signal by the minimum divide ratio of 64, assuming a 12 pF load. Output current can be minimized dependent on conditions such as output frequency, capacitive load being driven, and output voltage swing required. Typical values for load resistors are included in the Vout specification for various divide ratios at 2.8 GHz input frequency. * 2.8 GHz Toggle Frequency * * * MECL PLL COMPONENTS /64/128/256 PRESCALER SEMICONDUCTOR TECHNICAL DATA Supply Voltage 4.5 to 5.5 V Low Power 9mA Typical at VCC = 5.0 V 8 Operating Temperature Range of -40 to 85C 1 D SUFFIX PLASTIC PACKAGE CASE 751 (SO-8) FUNCTIONAL TABLE SW1 SW2 Divide Ratio H H 64 H L 128 L H 128 L L 256 NOTE: SW1 & SW2: H = VCC, L = Open. 8 1 MAXIMUM RATINGS Characteristic Power Supply Voltage, Pin 2 Operating Temperature Range Storage Temperature Range Maximum Output Current, Pin 4 NOTE: Symbol Range Unit VCC -0.5 to 7.0 Vdc TA -40 to 85 C Tstg -65 to 150 C IO 4.0 mA P SUFFIX PLASTIC PACKAGE CASE 626 PIN CONNECTIONS ESD data available upon request. IN VCC SW1 OUT 1 8 2 7 3 6 4 5 IN NC SW2 Gnd (Top View) ORDERING INFORMATION Device MC12079D MC12079P MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Operating Temperature Range TA = - 40 to +85C Package SO-8 Plastic MC12079 4.2-17 MC12079 ELECTRICAL CHARACTERISTICS (VCC = 4.5 to 5.5 V; TA = -40 to 85C, unless otherwise noted.) Symbol Min Typ Max Unit Toggle Frequency (Sine Wave) Parameter ft 0.25 3.4 2.8 GHz Supply Current Output (Pin 2) ICC - 9.0 11.5 mA Vin 400 100 - - 1000 1000 mVpp Divide Ratio Control Input High (SW) VIH VCC VCC VCC V Divide Ratio Control Input Low (SW) VIL Open Open Open - Output Voltage Swing Vout 1.0 1.6 - Vpp Input Voltage Sensitivity 250-500 MHz 500-2800 MHz (CL = 12 pF; RL = 1.2 k; IO = 2.7 mA)1 (CL = 12 pF; RL = 2.2 k; IO = 1.5 mA)2 (CL = 12 pF; RL = 3.9 k; IO = 0.85 mA)3 NOTES: 1. Divide ratio of /64 at 2.8 GHz. 2. Divide ratio of /128 at 2.8 GHz. 3. Divide ratio of /256 at 2.8 GHz. Figure 1. Logic Diagram (MC12079) In In D QB D Q D QB C Q C QB C Q D QB D QB D QB C Q C Q C Q D Q D QB C QB C Q Out SW2 SW1 Figure 2. AC Test Circuit VCC = 4.5 to 5.5 V C3 SINE WAVE GENERATOR C1 VCC IN SW1 50 SW2 C2 IN OUT GND MC12079 4.2-18 CL RL EXTERNAL COMPONENTS C1 = C2 = 1000 pF C3 = 0.1 F CL = 12 pF (Including Scope and Jig Capacitance) RL = 1.2 k (for /64 at 2.8 GHz) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12079 Figure 3. Input Signal Amplitude versus Input Frequency +15.0 +1257.40 +10.0 +707.11 EEEEEEEEEEEEEEEEEE EEEEEEEEEEEEEEEEEE EEEEEEEEEEEEEEEEEE EEEEEEEEEEEEEEEEEE EEEEEEEEEEEEEEEEEE 0 +223.61 OPERATING WINDOW -5.0 AMPLITUDE (dBm) +397.64 -10.0 -15.0 -20.0 +125.74 +70.71 +39.76 +22.36 -25.0 +12.57 -30.0 +7.07 -35.0 +3.98 -40.0 +2.24 -45.0 +1.26 -50.0 0 400 800 1200 1600 2000 2400 2800 3200 mVrms +5.0 +0.71 3600 FREQUENCY (MHz) Divide Ratio = 64; VCC = 5.0 V; TA = 25C Figure 4. Output Amplitude versus Input Frequency 2000 1200 800 mVpp 1600 400 0 400 800 1200 1600 2000 2400 2800 3200 0 3600 FREQUENCY (MHz) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12079 4.2-19 MC12080 1.1 GHz Prescaler The MC12080 is a single modulus divide by 10, 20, 40, 80 prescaler for low power frequency division of a 1.1 GHz high frequency input signal. Divide ratio control inputs SW1, SW2 and SW3 select the required divide ratio of /10, /20, /40, or /80. An external load resistor is required to terminate the output. A 820 resistor is recommended to achieve a 1.2 Vpp output swing, when dividing a 1.1 GHz input signal by the minimum divide by ratio of 10, assuming a 8.0 pF load. Output current can be minimized dependent on conditions such as output frequency, capacitive load being driven, and output voltage swing required. Typical values for load resistors are included in the Vout specification for various divide ratios at 1.1 GHz input frequency. * 1.1 GHz Toggle Frequency * * * MECL PLL COMPONENTS /10/20/40/80 PRESCALER SEMICONDUCTOR TECHNICAL DATA Supply Voltage 4.5 to 5.5 V Low Power 3.7mA Typical at VCC = 5.0 V 8 Operating Temperature Range of -40 to 85C 1 D SUFFIX PLASTIC PACKAGE CASE 751 (SO-8, Tape and Reel Only) FUNCTIONAL TABLE SW1 SW2 SW3 Divide Ratio L L L 80 L L H 40 L H L 40 L H H 20 H L L 40 H L H 20 NOTE: H H L 20 H H H 10 PIN CONNECTIONS In VCC SW1 Out SW1, SW2 and SW3: H = VCC, L = Open. 1 8 2 7 3 6 4 5 In SW3 SW2 Gnd (Top View) MAXIMUM RATINGS Characteristic Power Supply Voltage, Pin 2 Operating Temperature Range Storage Temperature Range Maximum Output Current, Pin 4 NOTE: Symbol Range Unit VCC -0.5 to 7.0 Vdc TA -40 to 85 C Tstg -65 to 150 C Device Operating Temperature Range Package IO 10 mA MC12080DR2 TA = - 40 to 85C SO-8 ORDERING INFORMATION ESD data available upon request. MC12080 4.2-20 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12080 ELECTRICAL CHARACTERISTICS (VCC = 4.5 to 5.5 V; TA = -40 to 85C, unless otherwise noted.) Symbol Min Typ Max Unit Toggle Frequency (Sine Wave) ft 0.1 1.4 1.1 GHz Supply Current Output (Pin 2) ICC - 3.7 5.0 mA Input Voltage Sensitivity 100 to 250 MHz 250 to 1100 MHz Vin 400 100 - - 1000 1000 Divide Ratio Control Input High (SW1, SW2, SW3) VIH VCC - 0.5 V VCC VCC + 0.5 V V Divide Ratio Control Input Low (SW1, SW2, SW3) VIL Open Open Open - Output Voltage Swing [Note] Vout 0.8 1.2 - Vpp Parameter mVpp RL = 820 , IO = 4.0 mA for /10 RL = 1.6 k, IO = 2.1 mA for /20 RL = 3.3 k, IO = 1.1 mA for /40 RL = 6.2 k, IO = 0.57 mA for /80 NOTE: Assumes 8.0 pF load and 1.1 GHz input frequency (typical), IO at VCC = 5.0 V and TA = 25C Figure 1. Logic Diagram In In D Q D Q D C QB C QB C Q QB 1 D QB D QB D QB D QB C Q C Q C Q C Q 0 Out SW1 SW3 SW2 Figure 2. AC Test Circuit VCC = 4.5 to 5.5 V C3 Sine Wave Generator VCC C1 In SW1 SW2 50 SW3 C2 In Out Gnd CL MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA RL External Components C1 = C2 = 1000 pF C3 = 0.1 F CL = 8.0 pF (Including Scope and Jig Capacitance) RL = 820 for /10 at 1.1 GHz MC12080 4.2-21 MC12080 Figure 3. Input Signal Amplitude versus Input Frequency +15.0 +1257.40 EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE EEEEEEEEEEEEEE +5.0 0 +397.64 +223.61 OPERATING WINDOW -5.0 AMPLITUDE (dBm) +707.11 -10.0 -15.0 -20.0 +125.74 +70.71 +39.76 +22.36 -25.0 +12.57 -30.0 +7.07 -35.0 +3.98 -40.0 +2.24 -45.0 +1.26 -50.0 0 200 400 600 800 1000 1200 1400 1600 mVrms +10.0 +0.71 1800 FREQUENCY (MHz) Divide Ratio = 10; VCC = 5.0 V; TA = 25C Figure 4. Output Amplitude versus Input Frequency 2000 1200 800 mVpp 1600 400 0 200 400 600 800 1000 1200 1400 1600 0 1800 FREQUENCY (MHz) MC12080 4.2-22 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA /2, /4, /8 MC12093 1.1GHz Low Power Prescaler with Stand-By Mode The MC12093 is a single modulus prescaler for low power frequency division of a 1.1 GHz high frequency input signal. Motorola's advanced MOSAIC V technology is utilized to acheive low power dissipation of 6.75 mW at a minimum supply voltage of 2.7 V. On-chip output termination provides output current to drive a 2.0 pF (typical) high impedance load. If additional drive is required for the prescaler output, an external resistor can be added parallel from the OUT pin to GND to increase the output power. Care must be taken not to exceed the maximum allowable current through the output. Divide ratio control inputs SW1 and SW2 select the required divide ratio of /2, /4, or /8. Stand-By mode is featured to reduce current drain to 50 A typical when the standby pin SB is switched LOW disabling the prescaler. * * * * * * MECL PLL COMPONENTS /2, /4, /8 LOW POWER PRESCALER WITH STAND-BY MODE SEMICONDUCTOR TECHNICAL DATA 8 1 1.1 GHz Toggle Frequency Supply Voltage 2.7 V to 5.5 Vdc Low Power 3.0 mA Typical D SUFFIX PLASTIC PACKAGE CASE 751 (SO-8) Operating Temperature -40 to 85C Divide by 2, 4 or 8 Selected by SW1 and SW2 Pins On-Chip Termination MOSAIC V is a trademark of Motorola FUNCTIONAL TABLE PIN CONNECTIONS SW SW2 Divide Ratio L L 8 H L 4 L H 4 H H 2 IN VCC SW2 OUT NOTES: 1. SW1 & SW2: H = (VCC - 0.5 V) to VCC; L = Open. 2. SB: H = 2.0 V to VCC, L = GND to 0.8 V. 1 8 2 7 3 6 4 5 IN SB SW1 Gnd (Top View) A LOW on the Stand-By Pin 7 disables the device. Function Chart ORDERING INFORMATION IN /2 Device Operating Temp Range Package MC12093D TA = -40 to 85C SO-8 /4 /8 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12093 4.2-23 MC12093 Figure 1. AC Test Circuit VCC = 2.7 to 5.5 V C3 C1 VCC IN SB SW1 50 SW2 IN EXTERNAL COMPONENTS C1 = C2 = 1000 pF C3 = 0.1 F C4 = 2.0 pF Load OUT GND C2 C4 MAXIMUM RATINGS Parameter Power Supply Voltage, Pin 2 Operating Temperature Range Storage Temperature Range Maximum Output Current, Pin 4 NOTE: Symbol Value Unit VCC -0.5 to 6.0 Vdc TA -40 to 85 C Tstg -65 to 150 C IO 4.0 mA ESD data available upon request. ELECTRICAL CHARACTERISTICS (VCC = 2.7 to 5.5 V; TA = -40 to 85C) Parameter Symbol Min Typ Max Unit ft 0.1 1.4 1.1 GHz Supply Current ICC - 3.0 4.5 mA Stand-By Current ISB - 120 200 A Toggle Frequency (Sine Wave) Stand-By Input HIGH (SB) VIH1 2.0 - VCC V Stand-By Input LOW (SB) VIL1 Gnd - 0.8 V Divide Ratio Control Input HIGH (SW1 & SW2) VIH2 VCC - 0.5 VCC VCC + 0.5 V Divide Ratio Control Input LOW (SW1 & SW2) VIL2 OPEN OPEN OPEN 0.6 0.5 0.4 0.3 0.80 0.70 0.55 0.45 - - - - 100 400 - - 1000 1000 Output Voltage Swing (2.0 pF Load) Output Frequency 12.5-350 MHz (Note 1) Output Frequency 350-400 MHz (Note 2) Output Frequency 400-450 MHz (Note 3) Output Frequency 450-550 MHz (Note 4) Input Voltage Sensitivity 250-1100 MHz 100-250 MHz VOUT VIN Vpp mVpp NOTES: 1. Input frequency 1.1 GHz, /8, minimum output frequency of 12.5 MHz. 2. Input frequency 700-800 MHz, /2. 3. Input frequency 800-900 MHz, /2. 4. Input frequency 900-1100 MHz, /2. MC12093 4.2-24 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12095 2.5 GHz Low Power Prescaler With Stand-By Mode The MC12095 is a single modulus prescaler for low power frequency division of a 2.5 GHz high frequency input signal. Motorola's advanced MOSAIC V technology is utilized to acheive low power dissipation of 24 mW at a minimum supply voltage of 2.7 V. On-chip output termination provides output current to drive a 2.0 pF (typical) high impedance load. If additional drive is required for the prescaler output, an external resistor can be added in parallel from the OUT pin to GND to increase the output power. Care must be taken not to exceed the maximum allowable current through the output. Divide ratio control input (SW) selects the required divide ratio of /2 or /4. Stand-By mode is available to reduce current drain to 100A typical when the standby pin SB is switched LOW disabling the prescaler. * * * * * MECL PLL COMPONENTS /2, /4 LOW POWER PRESCALER WITH STAND-BY MODE SEMICONDUCTOR TECHNICAL DATA 8 2.5 GHz Toggle Frequency 1 Supply Voltage 2.7 V to 5.5 Vdc Low Power 8.7 mA Typical Operating Temperature -40 to 85C D SUFFIX PLASTIC PACKAGE CASE 751 (SO-8) Divide by 2 or 4 Selected by the SW Pin NOTE: For applications up to 1.1 GHz, please consult the MC12093 datasheet. MOSAIC V is a trademark of Motorola FUNCTIONAL TABLE PIN CONNECTIONS SW Divide Ratio H 2 L 4 IN VCC NC OUT NOTES: 1. SW: H = (VCC - 0.4 V) to VCC; L = OPEN 2. SB: H = 2.0 V to VCC; L = GND to 0.8 V 1 8 2 7 3 6 4 5 IN SB SW Gnd (Top View) AC Test Circuit ORDERING INFORMATION VCC = 2.7 to 5.5 V C3 C1 VCC IN IN C2 Operating Temp Range Package MC12095D TA = -40 to 85C SO-8 SB EXTERNAL COMPONENTS C1 = C2 = 1000 pF C3 = 0.1 F C4 = 2.0 pF SW 50 Device OUT GND C4 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12095 4.2-25 MC12095 MAXIMUM RATINGS Parameter Power Supply Voltage, Pin 2 Operating Temperature Range Storage Temperature Range Maximum Output Current, Pin 4 NOTE: Symbol Value Unit VCC -0.5 to 6.0 Vdc TA -40 to 85 C Tstg -65 to 150 C IO 8.0 mA ESD data available upon request. ELECTRICAL CHARACTERISTICS (VCC = 2.7 to 5.5 V; TA = -40 to 85C, unless otherwise noted.) Symbol Min Typ Max Unit ft 500 3.0 2.5 GHz Supply Current ICC - 8.7 14 mA Stand-By Current ISB - 100 200 A Parameter Toggle Frequency (Sine Wave) Stand-By Input HIGH (SB) VIH1 2.0 - VCC + 0.5 V V Stand-By Input LOW (SB) VIL1 GND - 0.8 V Divide Ratio Control Input HIGH (SW) VIH2 VCC - 0.4 VCC VCC + 0.5 V V Divide Ratio Control Input LOW (SW) VIL2 OPEN OPEN OPEN VOUT 800 400 200 - 450 250 - - - mVpp VIN 200 - 1000 mVpp Output Voltage Swing (2pF Load) 500-1000 MHz Input 1000-1500 MHz Input 1500-2500 MHz Input Input Voltage Sensitivity Figure 1. Typical Minimum Input Sensitivity versus Input Frequency 0 Input Power Level (dBm) -10 -20 -30 -40 500 700 900 1100 1300 1500 1700 1900 2100 2300 2500 Input Frequency (MHz) (Divide By 2 Mode, T = 25C, VCC = 2.7 V) MC12095 4.2-26 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12095 Figure 2. Typical Output Amplitude versus Frequency over Temperature 1800 1600 -40C +25C +85C Output Amplitude (mVpp) 1400 1200 1000 800 SPEC 600 400 200 0 500 750 1000 1250 1500 1750 2000 2250 2500 Input Frequency (MHz) (Divide By 2 Mode, VCC = 2.7 V) Figure 3. Typical Output Amplitude versus Frequency over Temperature 1800 1600 -40C +25C +85C Output Amplitude (mVpp) 1400 1200 1000 800 SPEC 600 400 200 0 500 750 1000 1250 1500 1750 2000 2250 2500 Input Frequency (MHz) (Divide By 4 Mode, VCC = 2.7 V) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12095 4.2-27 MC12095 Figure 4. Input Impedance versus Frequency 150 125 R (Ohms) 100 75 50 25 0 500 700 900 1100 1300 1500 1700 1900 2100 2300 2500 2100 2300 2500 Input Frequency (MHz) Figure 5. Input Impedance versus Frequency 100 50 jX (Ohms) 0 -50 -100 -150 -200 500 700 900 1100 1300 1500 1700 1900 Input Frequency (MHz) MC12095 4.2-28 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12147 Low Power Voltage Controlled Oscillator Buffer The MC12147 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an emitter-coupled pair topology. The MC12147 can be used with an integrated PLL IC such as the MC12202 1.1 GHz Frequency Synthesizer to realize a complete PLL sub-system. The device is specified to operate over a voltage supply range of 2.7 to 5.5 V. It has a typical current consumption of 13 mA at 3.0 V which makes it attractive for battery operated handheld systems. LOW POWER VOLTAGE CONTROLLED OSCILLATOR BUFFER SEMICONDUCTOR TECHNICAL DATA NOT RECOMMENDED FOR NEW DESIGN DEVICE TO BE PHASED OUT. Consider MC12149 for New Designs. 8 NOTE: The MC12147 is NOT suitable as a crystal oscillator. * * * * * * * 1 Operates Up to 1.3 GHz Space-Efficient 8-Pin SOIC or SSOP Package Supply Voltage of 2.7 to 5.5 V D SUFFIX PLASTIC PACKAGE CASE 751 (SO-8) Typical 900MHz Performance - Phase Noise -105 dBc/Hz @ 100 kHz Offset - Tuning Voltage Sensitivity of 20 MHz/V Output Amplitude Adjustment Capability PIN CONNECTIONS Low Power 13 mA Typical @ 3.0 V Operation Two High Drive Outputs With a Typical Range from -8.0 to -2.0 dBm The device has two high frequency outputs which make it attractive for transceiver applications which require both a transmit and receive local oscillator (LO) signal. The outputs Q and QB are available for servicing the receiver IF and transmitter up-converter single-ended. In receiver applications, the outputs can be used together if it is necessary to generate a differential signal for the receiver IF. Because the Q and QB outputs are open collector, terminations to the VCC supply are required for proper operation. Since the outputs are complementary, BOTH outputs must be terminated even if only one is needed. The Q and QB outputs have a nominal drive level of -8dBm to conserve power. If addition signal amplitude is needed, a level adjustment pin (CNTL) is available, which when tied to ground, boosts the nominal output levels to -2.0 dBm. External components required for the MC12147 are: (1) tank circuit (LC network); (2) Inductor/capacitor to provide the termination for the open collector outputs; and (3) adequate supply voltage bypassing. The tank circuit consists of a high-Q inductor and varactor components. The preferred tank configuration allows the user to tune the VCO across the full supply range. VCO performance such as center frequency, tuning voltage sensitivity, and noise characteristics are dependent on the particular components and configuration of the VCO tank circuit. PIN NAMES Pin VCC CNTL TANK VREF QB GND Q NC Q GND QB 8 7 6 5 2 3 1 VCC CNTL TANK 4 VREF (Top View) ORDERING INFORMATION Device Operating Temperature Range Package MC12147D TA = -40 to 85C SO-8 Function Power Supply Amplitude Control for Q, QB Output Pair Tank Circuit Input Bias Voltage Output Open Collector Output Ground Open Collector Output MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12147 4.2-29 MC12147 MAXIMUM RATINGS (Note 1) Parameter Power Supply Voltage, Pin 1 Operating Temperature Range Storage Temperature Range Maximum Output Current, Pin 5,7 Symbol Value Unit VCC -0.5 to +7.0 V TA -40 to +85 C TSTG -65 to +150 C IO 12 mA NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. 2. ESD data available upon request. ELECTRICAL CHARACTERISTICS (VCC = 2.7 to 5.5 VDC, TA = -40 to 85C, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Supply Current (CNTL=GND)VCC = 3.3 V VCC = 5.5 V ICC - - 14.0 23.5 18 28 mA Supply Current (CNTL=OPEN)VCC = 3.3 V VCC = 5.5 V ICC - - 8 13 13.0 22.5 mA Output Amplitude (Pin 5 & 7) {Note 1] VCC = 2.7 V 50 to VCC VCC = 2.7 V VOH, VOL 2.6 2.1 2.7 2.3 - 2.4 Output Amplitude (Pin 5 & 7) [Note 1] VCC = 5.5 V 50 to VCC VCC = 5.5 V VOH, VOL 5.4 4.8 5.5 5.0 - 5.1 Tstg FC - 20 - MHz/V 100 - 1300 MHz - -85 - dBc/Hz - -105 - dBc/Hz - - 0.8 50 - - MHz/V KHz/C Tuning Voltage Sensitivity [Notes 2 and 3] Frequency of Operation CSR at 10 kHz Offset, 1.0 Hz BW [Notes 2 and 3] CSR at 100 kHz Offset, 1.0 Hz BW [Notes 2 and 3] Frequency Stability [Notes 2 and 3] Supply Drift Thermal Drift V V L(f) L(f) Fsts fstt NOTES: 1. CNTL pin tied to ground. 2. Actual performance depends on tank components selected. 3. See Figure 12, 750 MHz tank. 4. T = 25C, VCC = 5.0 V 10% MC12147 4.2-30 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12147 OPERATIONAL CHARACTERISTICS A simplified schematic of the MC12147 is found in Figure 1. The oscillator incorporates positive feedback by coupling the base of transistor Q2 to the collector of transistor Q1. In order to minimize interaction between the VCO outputs and the oscillator tank transistor pair, a buffer is incorporated into the circuit. This differential buffer is realized by the Q3 and Q4 transistor pair. The differential buffer drives the gate which contains the primary open collector outputs, Q and QB. The output is actually a current which has been set by an internal bias driver to a nominal current of 4mA. Additional circuitry is incorporated into the tail of the current source which allows the current source to be increased to approximately 10mA. This is accommodated by the addition of a resistor which is brought out to the CNTL pin. When this pin is tied to ground, the additional current is sourced through the current source thus increasing the output amplitude of the Q/QB output pair. If less than 10 mA of current is needed, a resistor can be added to ground which reduces the amount of current. APPLICATION INFORMATION Figure 2 illustrates the external components necessary for the proper operation of the VCO buffer. The tank circuit configuration in this figure allows the VCO to be tuned across the full operating voltage of the power supply. This is very important in 3V applications where it is desirable to utilize as much of the operating supply range as possible so as to minimize the VCO sensitivity (MHz/V). In most situations, it is desirable to keep the sensitivity low so the circuit will be less susceptible to external noise influences. An additional benefit to this configuration is that additional regulation/ filtering can be incorporated into the VCC line without compromising the tuning range of the VCO. With the AC-coupled tank configuration, the Vtune voltage can be greater than the VCC voltage supplied to the device. There are four main areas that the user directly influences the performance of the VCO. These include Tank Design, Output Termination Selection, Power Supply Decoupling, and Circuit Board Layout/Grounding. The design of the tank circuit is critical to the proper operation of the VCO. This tank circuit directly impacts the main VCO operating characteristics: 1) 2) 3) 4) Frequency of Operation Tuning Sensitivity Voltage Supply Pushing Phase Noise Performance The tank circuit, in its simplest form, is realized as an LC circuit which determines the VCO operating frequency. This is described in Equation 1. fo + 1 2p LC Equation 1 In the practical case, the capacitor is replaced with a varactor diode whose capacitance changes with the voltage applied, thus changing the resonant frequency at which the VCO tank operates. The capacitive component in Equation 1 also needs to include the input capacitance of the device and other circuit and parasitic elements. Typically, the inductor is realized as a surface mount chip or a wound-coil. In addition, the lead inductance and board inductance and capacitance also have an impact on the final operating point. Figure 1. Simplified Schematic VCC Q3 Q4 TANK VREF Q1 Q QB Q5 Q6 Q2 VREF 136 CNTL 200 GND MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12147 4.2-31 MC12147 Figure 2. MC12147 Typical External Component Connections VCC Supply C3a C3a VCC 1 8 CNTL Q 2 7 C2a Note 1 R1 C2a 3 LT CV Cb VREF 4 C6a VCO Output GND TANK C1 Vin L2a 6 VCO QB L2b C6b 5 VCO Output 1. This input can be left open, tied to ground, or tied with a resistor to ground, depending on the desired output amplitude needed at the Q and QB output pair. 2. Typical values for R1 range from 5.0 k to 10 k. A simplified linear approximation of the device, package, and typical board parasitics has been developed to aid the designer in selecting the proper tank circuit values. All the parasitic contributions have been lumped into a parasitic capacitive component and a parasitic inductive component. While this is not entirely accurate, it gives the designer a solid starting point for selecting the tank components. Below are the parameters used in the model. Cp Lp LT C1 Cb CV Parasitic Capacitance Parasitic Inductance Inductance of Coil Coupling Capacitor Value Capacitor for decoupling the Bias Pin Varactor Diode Capacitance (Variable) The values for these components are substituted into the following equations: Ci C1 CV ) Cp + C1 ) CV Equation 2 C + CiCi ) Cb Cb Equation 3 L= Lp + LT Equation 4 From Figure 2, it can be seen that the varactor capacitance (CV) is in series with the coupling capacitor (C1). This is calculated in Equation 2. For analysis purposes, the parasitic capacitances (CP) are treated as a lumped element and placed in parallel with the series combination of C1 and CV. This compound capacitance (Ci) is in series with the bias capacitor (Cb) which is calculated in Equation 3. The influences of the various capacitances; C1, CP, and Cb, impact the design by reducing the variable capacitance effects of the varactor which controls the tank resonant frequency and tuning range. MC12147 4.2-32 Now the results calculated from Equation 2, Equation 3 and Equation 4 can be substituted into Equation 1 to calculate the actual frequency of the tank. To aid in analysis, it is recommended that the designer use a simple spreadsheet based on Equation 1 through Equation 4 to calculate the frequency of operation for various varactor/inductor selections before determining the initial starting condition for the tank. The two main components at the heart of the tank are the inductor (LT) and the varactor diode (CV). The capacitance of a varactor diode junction changes with the amount of reverse bias voltage applied across the two terminals. This is the element which actually "tunes" the VCO. One characteristic of the varactor is the tuning ratio which is the ratio of the capacitance at specified minimum and maximum voltage points. For characterizing the MC12147, a Matsushita (Panasonic) varactor - MA393 was selected. This device has a typical capacitance of 11 pF at 1V and 3.7 pF at 4V and the C-V characteristic is fairly linear over that range. Similar performance was also acheived with Loral varactors. A multi-layer chip inductor was used to realize the LT component. These inductors had typical Q values in the 35-50 range for frequencies between 500 and 1000MHz. Note: There are many suppliers of high performance varactors and inductors an Motorola can not recommend one vendor over another. The Q (quality factor) of the components in the tank circuit has a direct impact on the resulting phase noise of the oscillator. In general, the higher the Q, the lower the phase noise of the resulting oscillator. In addition to the LT and CV components, only high quality surface-mount RF chip capacitors should be used in the tank circuit. These capacitors should have very low dielectric loss (high-Q). At a minimum, the capacitors selected should be operating 100 MHz below their series resonance point. As the desired frequency of operation increases, the values of the C1 and Cb capacitors will decrease since the series resonance point MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12147 is a function of the capacitance value. To simplify the selection of C1 and Cb, a table has been constructed based on t he int ende d o p e ra ti n g fre q u e n c y to prov i de recommended starting points. These may need to be altered depending on the value of the varactor selected. Frequency C1 Cb 200 - 500 MHz 47 pF 47 pF 500 - 900 MHz 5.1 pF 15 pF 900 - 1200 MHz 2.7 pF 15 pF The value of the Cb capacitor influences the VCO supply pushing. To minimize pushing, the Cb capacitor should be kept small. Since C1 is in series with the varactor, there is a strong relationship between these two components which influences the VCO sensitivity. Increasing the value of C1 tends to increase the sensitivity of the VCO. The parasitic contributions Lp and Cp are related to the MC12147 as well as parasitics associated with the layout, tank components, and board material selected. The input capacitance of the device, bond pad, the wire bond, package/lead capacitance, wire bond inductance, lead inductance, printed circuit board layout, board dielectric, and proximity to the ground plane all have an impact on these parasitics. For example, if the ground plane is located directly below the tank components, a parasitic capacitor will be formed consisting of the solder pad, metal traces, board dielectric material, and the ground plane. The test fixture used for characterizing the device consisted of a two sided copper clad board with ground plane on the back. Nominal values where determined by selecting a varactor and characterizing the device with a number of different tank/ frequency combinations and then performing a curve fit with the data to determine values for Lp and Cp. The nominal values for the parasitic effects are seen below: Parasitic Capacitance Parasitic Inductance Cp Lp 4.2 pF 2.2 nH 10. Perform worst case analysis of tank component variation to insure proper VCO operation over full temperature and voltage range and make any adjustments as needed. Outputs Q and QB are open collector outputs and need a inductor to VCC to provide the voltage bias to the output transistor. In most applications, dc-blocking capacitors are placed in series with the output to remove the dc component before interfacing to other circuitry. These outputs are complementary and should have identical inductor values for each output. This will minimize switching noise on the VCC supply caused by the outputs switching. It is important that both outputs be terminated, even if only one of the outputs is used in the application. Referring to Figure 2, the recommended value for L2a and L2b should be 47 nH and the inductor components resonance should be at least 300 MHz greater than the maximum operating frequency. For operation above 1100 MHz, it may be necessary to reduce that inductor value to 33 nH. The recommended value for the coupling capacitors C6a, C6b, and C7 is 47 pF. Figure 2 also includes decoupling capacitors for the supply line as well as decoupling for the output inductors. Good RF decoupling practices should be used with a series of capacitors starting with high quality 100 pF chip capacitors close to the device. A typical layout is shown below in Figure 3. The output amplitude of the Q and QB can be adjusted using the CNTL pin. Refering to Figure 1, if the CNTL pin is connected to ground, additional current will flow through the current source. When the pin is left open, the nominal current flowing through the outputs is 4 mA. When the pin is grounded, the current increases to a nominal value of 10 mA. So if a 50 ohm resistor was connected between the outputs and VCC, the output amplitude would change from 200 mV pp to 500 mV pp with an additional current drain for the device of 6 mA. To select a value between 4 and 10 mA, an external resistor can be added to ground. The equation below is used to calculate the current. Iout(nom) These values will vary based on the users unique circuit board configuration. Basic Guidelines: 1. Select a varactor with high Q and a reasonable capacitance versus voltage slope for the desired frequency range. 2. Select the value of Cb and C1 from the table above . 3. Calculate a value of inductance (L) which will result in achieving the desired center frequency. Note that L includes both LT and Lp. 4. Adjust the value of C1 to achieve the proper VCO sensitivity. 5. Re-adjust value of L to center VCO. 6. Prototype VCO design using selected components. It is important to use similar construction techniques and materials, board thickness, layout, ground plane spacing as intended for the final product. 7. Characterize tuning curve over the voltage operation conditions. 8. Adjust, as necessary, component values - L,C1, and Cb to compensate for parasitic board effects. 9. Evaluate over temperature and voltage limits. + ) 136 ) Rext) 0.8V 200 (136 ) Rext) (200 Figure 4 through Figure 13 illustrate typical performance achieved with the MC12147. The curves illustrate the tuning curve, supply pushing characteristics, output power, current drain, output spectrum, and phase noise performance. In most cases, data is present for both a 750 MHz and 1200 MHz tank design. The table below illustrates the component values used in the designs. Component 750MHz Tank 1200MHz Tank Units R1 5000 5000 C1 5.1 2.7 pF LT 4.7 1.8 nH CV 3.7 @ 1.0 V 11 @ 4.0 V 3.7 @ 1.0 V 11 @ 4.0 V pF Cb 100* 15 pF C6, C7 47 33 pF L2 47 47 nH * The value of Cb should be reduced to minimize pushing. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12147 4.2-33 MC12147 Figure 3. MC12147 Typical Layout (Not to Scale) CC CC CC C3a C2a VCO Output 1 1 R2 R1 CCCCC CCCCC CCCCC C1 Vtune LT Varactor C6a L2a C3b L2b C2b Cb VCO Output 2 C6b CCC CCC CCC = Via to/or Ground Plane = Via to/or Power Plane MC12147 4.2-34 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12147 Figure 4. Typical VCO Tuning Curve, 750 MHz Tank 850 825 Frequency of Operation (MHz) 800 775 750 725 700 -40C +25C +85C 675 650 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Tuning Voltage (V) Figure 5. Typical Supply Pushing, 750MHz Tank 750 748 Frequency of Operation (MHz) 746 744 742 740 738 736 734 -40C +25C +85C 732 730 2.7 3.0 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 VCC Supply Voltage (V) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12147 4.2-35 MC12147 Figure 6. Typical Q/QB Output Power versus Supply, 750 MHz Tank 0 -1 -2 Output Power (dBm) -3 -4 -40C +25C +85C +25C (LP) CNTL to GND -5 -6 -7 -8 -9 CNTL-N/C -10 2.7 3.0 3.3 3.6 3.9 4.2 4.5 4.8 5.0 VCC Supply Voltage (V) Figure 7. Typical Current Drain versus Supply, 750 MHz Tank 25 Current Drain (mA) 20 15 CNTL to GND -40C +25C +85C +25C (LP) 10 CNTL-N/C 5 2.7 3.0 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 VCC Supply Voltage (V) MC12147 4.2-36 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12147 Figure 8. Typical VCO Tuning Curve, 1200 MHz Tank (VCC = 5.0 V) 1300 Frequency of Operation (MHz) 1275 1250 1225 1200 1175 -40C +25C +85C 1150 0 0.6 1.2 1.8 2.4 3.0 3.6 4.2 4.8 Tuning Voltage (V) Figure 9. Typical Supply Pushing, 1200 MHz Tank 1210 1208 Frequency of Operation (MHz) 1206 1204 1202 1200 1198 1196 1194 -40C +25C +85C 1192 1190 2.7 3.0 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 VCC Supply Voltage (V) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12147 4.2-37 MC12147 Figure 10. Q/QB Output Power versus Supply, 1200 MHz Tank 2 1 Output Power (dBm) 0 -1 -2 -3 -40C +25C +85C -4 2.7 3.0 3.3 3.6 3.9 4.2 4.5 4.8 5.0 VCC Supply Voltage (V) Figure 11. Typical VCO Output Spectrum ATTEN 10 RL 0dBm 10dB/ MARKER 909MHz -7.1dBm 0 -10 -20 AMPLITUDE (dBm) -30 -40 -50 -60 -70 -80 -90 -100 START 1.0MHz RBW 1.0MHz MC12147 4.2-38 VBW 1.0MHz STOP 10.0GHz SWP 200ms MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12147 Figure 12. Typical Phase Noise Plot, 750 MHz Tank HP 3048A CARRIER 784.2MHz 0 -25 -50 dBc/Hz -75 -100 -125 -150 -170 100 1K 10K 100K 1M 10M 40M 10M 40M L(f) [dBc/Hz] vs f[Hz] Figure 13. Typical Phase Noise Plot, 1200 MHz Tank HP 3048A CARRIER 1220MHz 0 -25 dBc/Hz -50 -75 -100 -125 -150 -170 100 1K 10K 100K 1M L(f) [dBc/Hz] vs f[Hz] MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12147 4.2-39 MC12148 Low Power Voltage Controlled Oscillator The MC12148 requires an external parallel tank circuit consisting of the inductor (L) and capacitor (C). A varactor diode may be incorporated into the tank circuit to provide a voltage variable input for the oscillator (VCO). This device may also be used in many other applications requiring a fixed frequency clock. The MC12148 is ideal in applications requiring a local oscillator. Systems include electronic test equipment and digital high-speed telecommunications. The MC12148 is based on the VCO circuit topology of the MC1648. The MC12148 has been realized utilizing Motorola's MOSAIC III advanced bipolar process technology which results in a design which can operate at a much higher frequency than the MC1648 while utilizing half the current. Please consult with the MC1648 data sheet for additional background information. The ECL output circuitry of the MC12148 is not a traditional open emitter output structure and instead has an on-chip termination resistor with a nominal value of 500 ohms. This facilitates direct ac-coupling of the output signal into a transmission line. Because of this output configuration, an external pull-down resistor is not required to provide the output with a dc current path. This output is intended to drive one ECL load. If the user needs to fanout the signal, an ECL buffer such as the MC10EL16 Line Receiver/Driver should be used. LOW POWER VOLTAGE CONTROLLED OSCILLATOR SEMICONDUCTOR TECHNICAL DATA 8 1 D SUFFIX PLASTIC PACKAGE CASE 751 (SO-8) NOTE: The MC12148 is NOT useable as a crystal oscillator. * * * * PIN CONNECTIONS Typical Operating Frequency Up to 1100 MHz GND VCCO Low-Power 20 mA at 5.0 Vdc Power Supply 8 8-Pin SOIC Package 7 Out GND 6 5 Phase Noise -90 dBc/Hz at 25 kHz Typical NOT RECOMMENDED FOR NEW DESIGN DEVICE TO BE PHASED OUT. Consider MC12149 for New Designs. BLOCK DIAGRAM (Typical Test Circuit) VCCO 0.01F 0.1F 100F 1 2 3 VCC AGC TANK 4 Vref (Top View) 1200* Fout ORDERING INFORMATION 8 7 6 GND VCCO Out VCC = 4.5 to 5.5 V 0.01F 0.1F VCC 1 5 GND * The 1200 resistor and the scope termination impedance constitute a 25:1 attenuator probe. Device Operating Temperature Range Package MC12148D TA = -40 to 85C SO-8 AGC TANK Vref 2 3 4 0.1F 100 F 0.1 F Vin 51K MC12148 4.2-40 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12148 MAXIMUM RATINGS Parameter Power Supply Voltage, Pins 1, 7 Operating Temperature Range Storage Temperature Range NOTE: Symbol Value Unit VCC -0.5 to 7.0 Vdc TA -40 to 85 C Tstg -65 to 150 C ESD data available upon request. ELECTRICAL CHARACTERISTICS (VCC = 5.0 V; TA = -40 to 85C, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Supply Current ICC - 19 25 mA Output Level HIGH (1.0 M Impedance) VOH 3.95 4.17 4.61 V Output Level LOW (1.0 M Impedance) VOL 3.04 3.41 3.60 V - -90 - dBc/Hz - -120 - dBc/Hz CSR @ 1.0 MHz Offset, 1.0 Hz BW L(f) L(f) SNR (Signal to Noise Ratio from Carrier) SNR - 40 - dB Supply Drift Fsts - 3.6 - KHz/mV Thermal Drift Fstt - 0.1 - KHz/C H2 - -25 - dBc CSR @ 25 kHz Offset, 1.0 Hz BW Frequency Stability Second Harmonic (from Carrier) Figure 1. Circuit Schematic VCC 1 VCCO 7 Q9 Q1 Q3 Q2 6 OUT Q4 Q11 Q10 Q7 Q6 D1 Q5 Q8 D2 510 8 GND 4 Vref 3 TANK 5 GND 2 AGC MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12148 4.2-41 MC12148 Figure 2. Typical Evaluation Results (CSR MC12148 5.0 Vdc; VCC @ 25C; 930 MHz CW) 0 -20 dBc/Hz -40 -60 -80 -100 -120 -140 1K 10K 100K 1M 10M 100M L (f) [dBc/Hz] versus f [Hz] Tank Component Suppliers Below are suppliers who manufacture tuning varactors and inductors which can be used to build an external tank circuit. Motorola has used these varactors and inductors for evaluation purposes, however, there are other vendors who manufacture similar products. Coilcraft Inductors A01T thru A05T Coilcraft-Coilcraft, Inc. 1102 Silver Lake Rd. Gary, Illinois 60013 708-639-6400 Loral Tuning Varactors GC1500 Series Loral 16 Maple Road Chelmsford, Massachusetts 01824 508-256-8101 or 508-256-4113 Alpha Tuning Diodes DVH6730 Series Alpha Semiconductor Devices Division 20 Sylvan Road Woburn, MA 01801 617-935-5150 * At 1.1 GHz, use a Coilcraft A0IT Springair coil at 2.5 nH and a Loral Varactor 3.0 to 8.0 pF at VIN = 1.0 to 5.0 V. MC12148 4.2-42 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Low Power Voltage Controlled Oscillator Buffer The MC12149 is intended for applications requiring high frequency signal generation up to 1300 MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using an emitter-coupled pair topology. The MC12149 can be used with an integrated PLL IC such as the MC12202 1.1 GHz Frequency Synthesizer to realize a complete PLL sub-system. The device is specified to operate over a voltage supply range of 2.7 to 5.5 V. It has a typical current consumption of 15 mA at 3.0 V which makes it attractive for battery operated handheld systems. MC12149 LOW POWER VOLTAGE CONTROLLED OSCILLATOR BUFFER SEMICONDUCTOR TECHNICAL DATA NOTE: The MC12149 is NOT suitable as a crystal oscillator. * * * * * * * * 8 Operates Up to 1.3 GHz 1 Space-Efficient 8-Pin SOIC or SSOP Package Low Power 15 mA Typical @ 3.0 V Operation D SUFFIX PLASTIC PACKAGE CASE 751 (SO-8) Supply Voltage of 2.7 to 5.5 V Typical 900 MHz Performance - Phase Noise -105 dBc/Hz @ 100 kHz Offset - Tuning Voltage Sensitivity of 20 MHz/V Output Amplitude Adjustment Capability PIN CONNECTIONS Two High Drive Outputs With a Typical Range from -8.0 to -2.0 dBm One Low-Drive Output for Interfacing to a Prescaler The device has three high frequency outputs which make it attractive for transceiver applications which require both a transmit and receive local oscillator (LO) signal as well as a lower amplitude signal to drive the prescaler input of the frequency synthesizer. The outputs Q and QB are available for servicing the receiver IF and transmitter up-converter single-ended. In receiver applications, the outputs can be used together if it is necessary to generate a differential signal for the receiver IF. Because the Q and QB outputs are open collector, terminations to the VCC supply are required for proper operation. Since the outputs are complementary, BOTH outputs must be terminated even if only one is needed. The Q and QB outputs have a nominal drive level of -8dBm to conserve power. If addition signal amplitude is needed, a level adjustment pin (CNTL) is available, which when tied to ground, boosts the nominal output levels to -2.0 dBm. A low power VCO output (Q2) is also provided to drive the prescaler input of the PLL. The amplitude of this signal is nominally 500 mV which is suitable for most prescalers. External components required for the MC12149 are: (1) tank circuit (LC network); (2) Inductor/capacitor to provide the termination for the open collector outputs; and (3) adequate supply voltage bypassing. The tank circuit consists of a high-Q inductor and varactor components. The preferred tank configuration allows the user to tune the VCO across the full supply range. VCO performance such as center frequency, tuning voltage sensitivity, and noise characteristics are dependent on the particular components and configuration of the VCO tank circuit. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Q2 Q GND QB 8 7 6 5 1 2 3 4 VCC CNTL TANK VREF (Top View) ORDERING INFORMATION Device Operating Temperature Range Package MC12149D TA = -40 to 85C SO-8 MC12149 4.2-43 MC12149 PIN NAMES Pin VCC CNTL TANK VREF QB GND Q Q2 Function Power Supply Amplitude Control for Q, QB Output Pair Tank Circuit Input Bias Voltage Output Open Collector Output Ground Open Collector Output Low Power Output MAXIMUM RATINGS (Note 1) Parameter Symbol Value Unit VCC -0.5 to 7.0 V TA -40 to 85 C TSTG -65 to 150 C Maximum Output Current, Pin 8 IO 7.5 mA Maximum Output Current, Pin 5,7 IO 12 mA Power Supply Voltage, Pin 1 Operating Temperature Range Storage Temperature Range NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. 2. ESD data available upon request. ELECTRICAL CHARACTERISTICS (VCC = 2.7 to 5.5 VDC, TA = -40 to 85C, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Supply Current (CNTL=GND)VCC = 3.3 V VCC = 5.5 V ICC - - 16 23.5 20 30 mA Supply Current (CNTL=OPEN)VCC = 3.3 V VCC = 5.5 V ICC - - 10 15 15.0 24.5 mA Output Amplitude (Pin 8)VCC = 2.7 V High Impedance LoadVCC = 2.7 V VOH, VOL 1.75 1.20 1.85 1.35 1.95 1.50 V Output Amplitude (Pin 8)VCC = 5.5 V High Impedance LoadVCC = 5.5 V VOH, VOL 4.50 3.85 4.6 4.0 4.70 4.15 V Output Amplitude (Pin 5 & 7) [Note 1] VCC = 2.7 V 50 to VCC VCC = 2.7 V VOH, VOL 2.6 2.1 2.7 2.3 - 2.4 V Output Amplitude (Pin 5 & 7) [Note 1] VCC = 5.5 V 50 to VCC VCC = 5.5V VOH, VOL 5.4 4.8 5.5 5.0 - 5.1 V Tstg FC - 20 - MHz/V 100 - 1300 MHz - -85 - dBc/Hz - -105 - dBc/Hz - - 0.8 50 - - MHz/V KHz/C Tuning Voltage Sensitivity [Notes 2 and 3] Frequency of Operation CSR at 10 kHz Offset, 1Hz BW [Notes 2 and 3] CSR at 100 kHz Offset, 1Hz BW [Notes 2 and 3] Frequency Stability [Notes 3 and 4] Supply Drift Thermal Drift L(f) L(f) Fsts fstt NOTES: 1. CNTL pin tied to ground. 2. Actual performance depends on tank components selected. 3. See Figure 12, 750 MHz tank. 4. T = 25C, VCC = 5.0 V 10% MC12149 4.2-44 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12149 OPERATIONAL CHARACTERISTICS A simplified schematic of the MC12149 is found in Figure 1. The oscillator incorporates positive feedback by coupling the base of transistor Q2 to the collector of transistor Q1. In order to minimize interaction between the VCO outputs and the oscillator tank transistor pair, a buffer is incorporated into the circuit. This differential buffer is realized by the Q3 and Q4 transistor pair. The differential buffer drives the gate which contains the primary open collector outputs, Q and QB. The output is actually a current which has been set by an internal bias driver to a nominal current of 4mA. Additional circuitry is incorporated into the tail of the current source which allows the current source to be increased to approximately 10 mA. This is accommodated by the addition of a resistor which is brought out to the CNTL pin. When this pin is tied to ground, the additional current is sourced through the current source thus increasing the output amplitude of the Q/QB output pair. If less than 10mA of current is needed, a resistor can be added to ground which reduces the amount of current. The Q/QB outputs drive an additional differential buffer which generate the Q2 output signal. To minimize current, the circuit is realized as an emitter-follower buffer with an on chip pull down resistor. This output is intended to drive the prescaler input of the PLL synthesizer block. APPLICATION INFORMATION Figure 2 illustrates the external components necessary for the proper operation of the VCO buffer. The tank circuit configuration in this figure allows the VCO to be tuned across the full operating voltage of the power supply. This is very important in 3.0 V applications where it is desirable to utilize as much of the operating supply range as possible so as to minimize the VCO sensitivity (MHz/V). In most situations, it is desirable to keep the sensitivity low so the circuit will be less susceptible to external noise influences. An additional benefit to this configuration is that additional regulation/ filtering can be incorporated into the VCC line without compromising the tuning range of the VCO. With the ac-coupled tank configuration, the Vtune voltage can be greater than the VCC voltage supplied to the device. There are four main areas that the user directly influences the performance of the VCO. These include Tank Design, Output Termination Selection, Power Supply Decoupling, and Circuit Board Layout/Grounding. The design of the tank circuit is critical to the proper operation of the VCO. This tank circuit directly impacts the main VCO operating characteristics: 1) 2) 3) 4) Frequency of Operation Tuning Sensitivity Voltage Supply Pushing Phase Noise Performance The tank circuit, in its simplest form, is realized as an LC circuit which determines the VCO operating frequency. This is described in Equation 1. fo + 1 2p LC Equation 1 In the practical case, the capacitor is replaced with a varactor diode whose capacitance changes with the voltage applied, thus changing the resonant frequency at which the VCO tank operates. The capacitive component in Equation 1 also needs to include the input capacitance of the device and other circuit and parasitic elements. Typically, the inductor is realized as a surface mount chip or a wound-coil. In addition, the lead inductance and board inductance and capacitance also have an impact on the final operating point. Figure 1. Simplified Schematic VCC Q3 Q4 TANK VREF Q QB Q5 Q6 VCC Q2 Q1 Q2 VREF 136 CNTL 1000 200 GND MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12149 4.2-45 MC12149 Figure 2. MC12149 Typical External Component Connections VCC Supply C3a C3a VCC 1 Q2 8 C7 CNTL Q L2a 2 7 To Prescaler C2a Note 1 R1 C2a 3 LT CV Cb VREF 4 VCO Output GND TANK C1 Vin C6a 6 VCO QB L2b C6b 5 VCO Output 1. This input can be left open, tied to ground, or tied with a resistor to ground, depending on the desired output amplitude needed at the Q and QB output pair. 2. Typical values for R1 range from 5.0 k to 10 k. A simplified linear approximation of the device, package, and typical board parasitics has been developed to aid the designer in selecting the proper tank circuit values. All the parasitic contributions have been lumped into a parasitic capacitive component and a parasitic inductive component. While this is not entirely accurate, it gives the designer a solid starting point for selecting the tank components. Below are the parameters used in the model. Cp Lp LT C1 Cb CV Parasitic Capacitance Parasitic Inductance Inductance of Coil Coupling Capacitor Value Capacitor for decoupling the Bias Pin Varactor Diode Capacitance (Variable) The values for these components are substituted into the following equations: Ci C1 CV ) Cp + C1 ) CV Equation 2 C + CiCi ) Cb Cb Equation 3 L= Lp + LT Equation 4 From Figure 2, it can be seen that the varactor capacitance (CV) is in series with the coupling capacitor (C1). This is calculated in Equation 2. For analysis purposes, the parasitic capacitances (CP) are treated as a lumped element and placed in parallel with the series combination of C1 and CV. This compound capacitance (Ci) is in series with the bias capacitor (Cb) which is calculated in Equation 3. The influences of the various capacitances; C1, CP, and Cb, impact the design by reducing the variable capacitance effects of the varactor which controls the tank resonant frequency and tuning range. MC12149 4.2-46 Now the results calculated from Equation 2, Equation 3 and Equation 4 can be substituted into Equation 1 to calculate the actual frequency of the tank. To aid in analysis, it is recommended that the designer use a simple spreadsheet based on Equation 1 through Equation 4 to calculate the frequency of operation for various varactor/inductor selections before determining the initial starting condition for the tank. The two main components at the heart of the tank are the inductor (LT) and the varactor diode (CV). The capacitance of a varactor diode junction changes with the amount of reverse bias voltage applied across the two terminals. This is the element which actually "tunes" the VCO. One characteristic of the varactor is the tuning ratio which is the ratio of the capacitance at specified minimum and maximum voltage points. For characterizing the MC12149, a Matsushita (Panasonic) varactor - MA393 was selected. This device has a typical capacitance of 11 pF at 1.0 V and 3.7 pF at 4.0 V and the C-V characteristic is fairly linear over that range. Similar performance was also acheived with Loral varactors. A multi-layer chip inductor was used to realize the LT component. These inductors had typical Q values in the 35 to 50 range for frequencies between 500 and 1000 MHz. Note: There are many suppliers of high performance varactors and inductors and Motorola can not recommend one vendor over another. The Q (quality factor) of the components in the tank circuit has a direct impact on the resulting phase noise of the oscillator. In general, the higher the Q, the lower the phase noise of the resulting oscillator. In addition to the LT and CV components, only high quality surface-mount RF chip capacitors should be used in the tank circuit. These capacitors should have very low dielectric loss (high-Q). At a minimum, the capacitors selected should be operating 100 MHz below their series resonance point. As the desired frequency of operation increases, the values of the C1 and Cb capacitors will decrease since the series resonance point MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12149 is a function of the capacitance value. To simplify the selection of C1 and Cb, a table has been constructed based on t he int ende d o p e ra ti n g fre q u e n c y to prov i de recommended starting points. These may need to be altered depending on the value of the varactor selected. Frequency C1 Cb 200 - 500 MHz 47 pF 47 pF 500 - 900 MHz 5.1 pF 15 pF 900 - 1200 MHz 2.7 pF 15 pF The value of the Cb capacitor influences the VCO supply pushing. To minimize pushing, the Cb capacitor should be kept small. Since C1 is in series with the varactor, there is a strong relationship between these two components which influences the VCO sensitivity. Increasing the value of C1 tends to increase the sensitivity of the VCO. The parasitic contributions Lp and Cp are related to the MC12149 as well as parasitics associated with the layout, tank components, and board material selected. The input capacitance of the device, bond pad, the wire bond, package/lead capacitance, wire bond inductance, lead inductance, printed circuit board layout, board dielectric, and proximity to the ground plane all have an impact on these parasitics. For example, if the ground plane is located directly below the tank components, a parasitic capacitor will be formed consisting of the solder pad, metal traces, board dielectric material, and the ground plane. The test fixture used for characterizing the device consisted of a two sided copper clad board with ground plane on the back. Nominal values where determined by selecting a varactor and characterizing the device with a number of different tank/ frequency combinations and then performing a curve fit with the data to determine values for Lp and Cp. The nominal values for the parasitic effects are seen below: Parasitic Capacitance Parasitic Inductance Cp Lp 4.2 pF 2.2 nH 10. Perform worst case analysis of tank component variation to insure proper VCO operation over full temperature and voltage range and make any adjustments as needed. Outputs Q and QB are open collector outputs and need a inductor to VCC to provide the voltage bias to the output transistor. In most applications, DC-blocking capacitors are placed in series with the output to remove the DC component before interfacing to other circuitry. These outputs are complementary and should have identical inductor values for each output. This will minimize switching noise on the VCC supply caused by the outputs switching. It is important that both outputs be terminated, even if only one of the outputs is used in the application. Referring to Figure 2, the recommended value for L2a and L2b should be 47 nH and the inductor components resonance should be at least 300 MHz greater than the maximum operating frequency. For operation above 1100 MHz, it may be necessary to reduce that inductor value to 33 nH. The recommended value for the coupling capacitors C6a, C6b, and C7 is 47 pF. Figure 2 also includes decoupling capacitors for the supply line as well as decoupling for the output inductors. Good RF decoupling practices should be used with a series of capacitors starting with high quality 100 pF chip capacitors close to the device. A typical layout is shown below in Figure 3. The output amplitude of the Q and QB can be adjusted using the CNTL pin. Refering to Figure 1, if the CNTL pin is connected to ground, additional current will flow through the current source. When the pin is left open, the nominal current flowing through the outputs is 4 mA. When the pin is grounded, the current increases to a nominal value of 10 mA. So if a 50 ohm resistor was connected between the outputs and VCC, the output amplitude would change from 200 mV pp to 500 mV pp with an additional current drain for the device of 6 mA. To select a value between 4 and 10 mA, an external resistor can be added to ground. The equation below is used to calculate the current. Iout(nom) These values will vary based on the users unique circuit board configuration. Basic Guidelines: 1. Select a varactor with high Q and a reasonable capacitance versus voltage slope for the desired frequency range. 2. Select the value of Cb and C1 from the table above . 3. Calculate a value of inductance (L) which will result in achieving the desired center frequency. Note that L includes both LT and Lp. 4. Adjust the value of C1 to achieve the proper VCO sensitivity. 5. Re-adjust value of L to center VCO. 6. Prototype VCO design using selected components. It is important to use similar construction techniques and materials, board thickness, layout, ground plane spacing as intended for the final product. 7. Characterize tuning curve over the voltage operation conditions. 8. Adjust, as necessary, component values - L,C1, and Cb to compensate for parasitic board effects. 9. Evaluate over temperature and voltage limits. + ) 136 ) Rext) 0.8V 200 (136 ) Rext) (200 Figure 4 through Figure 13 illustrate typical performance achieved with the MC12149. The curves illustrate the tuning curve, supply pushing characteristics, output power, current drain, output spectrum, and phase noise performance. In most cases, data is present for both a 750 MHz and 1200 MHz tank design. The table below illustrates the component values used in the designs. Component 750MHz Tank 1200MHz Tank R1 5000 5000 C1 5.1 2.7 pF LT 4.7 1.8 nH CV 3.7 @ 1.0 V 11 @ 4.0 V 3.7 @ 1.0 V 11 @ 4.0 V pF Cb 100* 15 pF C6, C7 47 33 pF L2 47 47 nH NOTE: MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Units * The value of Cb should be reduced to minimize pushing. MC12149 4.2-47 MC12149 Figure 3. MC12149 Typical Layout (Not to Scale) To Prescaler CC CC CC C3a C7 C2a VCO Output 1 1 R2 R1 CCCCC CCCCC CCCCC C1 Vtune LT Varactor C6a L2a C3b L2b C2b Cb VCO Output 2 C6b CCC CCC CCC = Via to/or Ground Plane = Via to/or Power Plane MC12149 4.2-48 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12149 Figure 4. Typical VCO Tuning Curve, 750 MHz Tank 850 825 Frequency of Operation (MHz) 800 775 750 725 700 -40C +25C +85C 675 650 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Tuning Voltage (V) Figure 5. Typical Supply Pushing, 750 MHz Tank 750 748 Frequency of Operation (MHz) 746 744 742 740 738 736 734 -40C +25C +85C 732 730 2.7 3.0 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 VCC Supply Voltage (V) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12149 4.2-49 MC12149 Figure 6. Typical Q/QB Output Power versus Supply, 750 MHz Tank 0 -1 -2 Output Power (dBm) -3 -4 -40C +25C +85C +25C (LP) CNTL to GND -5 -6 -7 -8 -9 CNTL-N/C -10 2.7 3.0 3.3 3.6 3.9 4.2 4.5 4.8 5.0 VCC Supply Voltage (V) Figure 7. Typical Current Drain versus Supply, 750 MHz Tank 25 Current Drain (mA) 20 15 CNTL to GND -40C +25C +85C +25C (LP) 10 CNTL-N/C 5 2.7 3.0 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 VCC Supply Voltage (V) MC12149 4.2-50 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12149 Figure 8. Typical VCO Tuning Curve, 1200 MHz Tank (VCC = 5.0 V) 1300 Frequency of Operation (MHz) 1275 1250 1225 1200 1175 -40C +25C +85C 1150 0 0.6 1.2 1.8 2.4 3.0 3.6 4.2 4.8 Tuning Voltage (V) Figure 9. Typical Supply Pushing, 1200 MHz Tank 1210 1208 Frequency of Operation (MHz) 1206 1204 1202 1200 1198 1196 1194 -40C +25C +85C 1192 1190 2.7 3.0 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 VCC Supply Voltage (V) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12149 4.2-51 MC12149 Figure 10. Q/QB Output Power versus Supply, 1200 MHz Tank 2 1 Output Power (dBm) 0 -1 -2 -3 -40C +25C +85C -4 2.7 3.0 3.3 3.6 3.9 4.2 4.5 4.8 5.0 VCC Supply Voltage (V) Figure 11. Typical VCO Output Spectrum ATTEN 10 RL 0dBm 10dB/ MARKER 909MHz -7.1dBm 0 -10 -20 AMPLITUDE (dBm) -30 -40 -50 -60 -70 -80 -90 -100 START 10MHz RBW 1.0MHz MC12149 4.2-52 VBW 1.0MHz STOP 10.0GHz SWP 200ms MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12149 Figure 12. Typical Phase Noise Plot, 750 MHz Tank HP 3048A CARRIER 784.2MHz 0 -25 -50 dBc/Hz -75 -100 -125 -150 -170 100 1K 10K 100K 1M 10M 40M 10M 40M L(f) [dBc/Hz] vs f[Hz] Figure 13. Typical Phase Noise Plot, 1200 MHz Tank HP 3048A CARRIER 1220MHz 0 -25 dBc/Hz -50 -75 -100 -125 -150 -170 100 1K 10K 100K 1M L(f) [dBc/Hz] vs f[Hz] MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12149 4.2-53 MC12179 500-2800 MHz Single Channel Frequency Synthesizer The MC12179 is a monolithic Bipolar synthesizer integrating the high frequency prescaler, phase/frequency detector, charge pump, and reference oscillator/buffer functions. When combined with an external loop filter and VCO, the MC12179 serves as a complete PLL subsystem. Motorola's advanced MOSAIC V technology is utilized for low power operation at a 5.0 V supply voltage. The device is designed for operation up to 2.8 GHz for high frequency applications such as CATV down converters and satellite receiver tuners. * * * * * * * * * 500 - 2800 MHz SINGLE CHANNEL FREQUENCY SYNTHESIZER SEMICONDUCTOR TECHNICAL DATA 2.8 GHz Maximum Operating Frequency Low Power Supply Current of 3.5 mA Typical, Including ICC and IP Currents Supply Voltage of 5.0 V Typical Integrated Divide by 256 Prescaler On-Chip Reference Oscillator/Buffer - 2.0 to 11 MHz Operation When Driven From Reference Source - 5.0 to 11 MHz Operation When Used With a Crystal Digital Phase/Frequency Detector with Linear Transfer Function 8 1 Balanced Charge Pump Output D SUFFIX PLASTIC PACKAGE CASE 751 (SO-8) Space Efficient 8-Lead SOIC Operating Temperature Range of -40 to 85C For additional information on calculating the loop filter components, an InterActiveApNote document containing software (based on a Microsoft Excel spreadsheet) and an Application Note is available. Please order DK306/D from the Motorola Literature Distribution Center. PIN CONNECTIONS MOSAIC V, Mfax and InterActiveApNote are trademarks of Motorola, Inc. MAXIMUM RATINGS (Note 1) Parameter Symbol Value Unit VCC -0.5 to 6.0 Vdc Power Supply Voltage, Pin 7 VP VCC to 6.0 Vdc Storage Temperature Range Tstg -65 to 150 C Power Supply Voltage, Pin 2 NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions as identified in the Electrical Characteristics table. 2. ESD data available upon request. OSCin 1 8 OSCout VCC 2 7 VP Gnd 3 6 PDout Fin 4 5 GndP Block Diagram OSCin Crystal Oscillator OSCout Fin MC12179 4.2-54 fr Phase/Frequency Detector Prescaler /256 (Top View) Charge Pump PDout ORDERING INFORMATION fv Device Operating Temperature Range Package MC12179D TA = -40 to +85C SO-8 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12179 ELECTRICAL CHARACTERISTICS (VCC = 4.5 to 5.5 V; VP = VCC to 5.5 V; TA = -40 to 85C, unless otherwise noted.) Characteristic Supply Current for VCC Supply Current for VP Operating Frequency fINmax fINmin Operating Frequency Crystal Mode External Oscillator OSCin Input Sensitivity Fin Input Sensitivity External Oscillator OSCin Symbol Min Typ Max Unit ICC - 3.1 5.6 mA Note 1 Condition IP - 0.4 1.3 mA Note 1 FIN 2800 - - - - 500 MHz Note 2 FOSC 5 2 - - 11 11 MHz Note 3 Note 4 VIN 200 - 1000 mVP-P Note 2 Note 4 VOSC 500 - 2200 mVP-P Output Source Current5 (PDout) IOH -2.8 -2.2 -1.6 mA VP = 4.5 V, VPDout = VP/2 Output Sink Current5 (PDout) IOL 1.6 2.2 2.8 mA VP = 4.5 V, VPDout = VP/2 Output Leakage Current (PDout) IOZ - 0.5 15 nA VP = 5.0 V, VPDout = VP/2 NOTES: 1. VCC and VP = 5.5 V; FIN = 2.56 GHz; FOSC = 10 MHz crystal; PDout open. 2. AC coupling, FIN measured with a 1000 pF capacitor. 3. Assumes C1 and C2 (Figure 1) limited to 30 pF each including stray and parasitic capacitances. 4. AC coupling to OSCin. 5. Refer to Figure 15 and Figure 16 for typical performance curves over temperature and power supply voltage. PIN FUNCTION DESCRIPTION Pin Symbol I/O Function 1 OSCin I Oscillator Input -- An external parallel-resonant, fundamental crystal is connected between OSCin and OSCout to form an internal reference oscillator (crystal mode). External capacitors C1 and C2, as shown in Figure 1, are required to set the proper crystal load capacitance and oscillator frequency. For an external reference oscillator, an external signal is AC-coupled to the OSCin pin with a 1000 pF coupling capacitor, with no connection to OSCout. In either mode, a resistor with a nominal value of 50 k MUST be placed across the OSCin and OSCout pins for proper operation. 2 VCC -- Positive Power Supply. Bypass capacitors should be placed as close as possible to the pin and be connected directly to the ground plane. 3 Gnd -- Ground. 4 Fin I 5 GndP -- Ground -- For charge pump circuitry. 6 PDout O Single ended phase/frequency detector output (charge pump output). Three-state current sink/source output for use as a loop error signal when combined with an external low pass filter. The phase/frequency detector is characterized by a linear transfer function. 7 VP -- Positive power supply for charge pump. VP MUST be equal or greater than VCC. Bypass capacitors should be placed as close as possible to the pin and be connected directly to the ground plane. 8 OSCout O Oscillator output, for use with an external crystal as shown in Figure 1. Prescaler Input -- The VCO signal is AC coupled into the Fin pin. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12179 4.2-55 MC12179 Figure 1. MC12179 Expanded Block Diagram +5.0 V +5.0 V C1 2 VCC 1 OSCin 8 OSCout C2 NOTE: External 50 k resistor across Pins 1 and 8 is necessary in either crystal or driven mode. 4 VCO 1000 pF VP Crystal Oscillator fr Phase/Frequency Detector 6 Charge Pump To Loop Filter PDout fv Fin 7 Prescaler /256 GND 3 GNDP 5 PHASE CHARACTERISTICS The phase comparator in the MC12179 is a high speed digital phase/frequency detector circuit. The circuit determines the "lead" or "lag" phase relationship and time difference between the leading edges of the VCO (fv) signal and the reference (fr) input. The detector can cover a range of 2 radian of fv/fr phase difference. The operation of the charge pump output is shown in Figure 2. fr lags fv in phase OR fv>fr in frequency When the phase of fr lags that of fv or the frequency of fv is greater than fr, the Do output will sink current. The pulse width will be determined by the time difference between the two rising edges. fr leads fv in phase OR fv<fr in frequency When the phase of fr leads that of fv or the frequency of fv is less than fr, the Do output will source current. The pulse width will be determined by the time difference between the two rising edges. fr = fv in phase and frequency When the phase and frequency of fr and fv are equal, the charge pump will be in a quiet state, except for current spikes when signals are in phase. This situation indicates that the loop is in lock and the phase comparator will maintain the loop in its locked state. Figure 2. Phase/Frequency Detector and Charge Pump Waveforms H fr (OSCin) L H fv (Fin /256) L Sourcing Current Pulse Z Sinking Current Pulse PDout H = High voltage level; L = Low voltage level; Z = High impedance NOTES: Phase difference detection range: -2 to 2 Kp-Charge Pump Gain MC12179 4.2-56 mA [ |Isource4| p) |Isink| + |2.2| )4p|-2.2| + p1.1radian MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12179 APPLICATIONS INFORMATION The MC12179 is intended for applications where a fixed local oscillator is required to be synthesized. The prescaler on the MC12179 operates up to 2.8GHz which makes the part ideal for many satellite receiver applications as well as applications in the 2nd ISM (Industrial, Scientific, and Medical) band which covers the frequency range of 2400MHz to 2483MHz. The part is also intended for MMDS (Multi-channel Multi-point Distribution System) block downconverter applications. Below is a typical block diagram of the complete PLL. Figure 3. Typical Block Diagram of Complete PLL MC12179 PLL External Ref 10.0 MHz VCO /Freq Det Charge Pump Loop Filter 2560.00 MHz Since the MC12179 is realized with an all-bipolar ECL style design, the internal oscillator circuitry is different from more traditional CMOS oscillator designs which realize the crystal oscillator with a modified inverter topology. These CMOS designs typically excite the crystal with a rail-to-rail signal which may overdrive the crystal resulting in damage or unstable operation. The MC12179 design does not exhibit these phenomena because the swing out of the OSCout pin is less than 600mV. This has the added advantage of minimizing EMI and switching noise which can be generated by rail-to-rail CMOS outputs. The OSCout output should not be used to drive other circuitry. The oscillator buffer in the MC12179 is a single stage, high speed, differential input/output amplifier; it may be considered to be a form of the Pierce oscillator. A simplified circuit diagram is seen in Figure 4. Figure 4. Simplified Crystal Oscillator/Buffer Circuit /P 256 As can be seen from the block diagram, with the addition of a VCO, a loop filter, and either an external oscillator or crystal, a complete PLL sub-system can be realized. Since most of the PLL function is integrated into the MC12179, the user's primary focus is on the loop filter design and the crystal reference circuit. Figure 13 and Figure 14 illustrate typical VCO spectrum and phase noise characteristics. Figure 17 and Figure 18 illustrate the typical input impedance versus frequency for the prescaler input. Crystal Oscillator Design The MC12179 is used as a multiply-by-256 PLL circuit which transfers the high stability characteristic of a low frequency reference source to the high frequency VCO in the PLL loop. To facilitate this, the device contains an input circuit which can be configured as a crystal oscillator or a buffer for accepting an external signal source. In the external reference mode, the reference source is AC-coupled into the OSCin input pin. The input level signal should be between 500-2200 mVpp. When configured with an external reference, the device can operate with input frequencies down to 2MHz, thus allowing the circuit to control the VCO down to 512 MHz. To optimize the phase noise of the PLL when used in this mode, the input signal amplitude should be closer to the upper specification limit. This maximizes the slew rate of the input signal as it switches against the internal voltage reference. In the crystal mode, an external parallel-resonant fundamental mode crystal is connected between the OSCin and OSCout pins. This crystal must be between 5.0 MHz and 11 MHz. External capacitors, C1 and C2 as shown in Figure 1, are required to set the proper crystal load capacitance and oscillator frequency. The values of the capacitors are dependent on the crystal chosen and the input capacitance of the device and any stray board capacitance. In either mode, a 50k resistor must be connected between the OSCin and the OSCout pins for proper device operation. The value of this resistor is not critical so a 47k or 51k 10% resistor is acceptable. VCC OSCout OSCin To Phase/ Frequency Detector Bias Source OSCin drives the base of one input of an NPN transistor differential pair. The non-inverting input of the differential pair is internally biased. OSCout is the inverted input signal and is buffered by an emitter follower with a 70 A pull-down current and has a voltage swing of about 600 mVpp. Open loop output impedance is about 425. The opposite side of the differential amplifier output is used internally to drive another buffer stage which drives the phase/frequency detector. With the 50 k feedback resistor in place, OSCin and OSCout are biased to approximately 1.1V below VCC. The amplifier has a voltage gain of about 15 dB and a bandwidth in excess of 150 MHz. Adherence to good RF design and layout techniques, including power supply pin decoupling, is strongly recommended. A typical crystal oscillator application is shown in Figure 1. The crystal and the feedback resistor are connected directly between OSCin and OSCout, while the loading capacitors, C1 and C2, are connected between OSCin and ground, and OSCout and ground respectively. It is important to understand that as far as the crystal is concerned, the two loading capacitors are in series (albeit through ground). So when the crystal specification defines a specific loading capacitance, this refers to the total external (to the crystal) capacitance seen across its two pins. This capacitance consists of the capacitance contributed by the amplifier (IC and packaging), layout capacitance, and the series combination of the two loading capacitors. This is illustrated in the equation below: MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12179 4.2-57 MC12179 CI C1 C2 + CAMP ) CSTRAY ) C1 ) C2 Provided the crystal and associated components are located immediately next to the IC, thus minimizing the stray capacitance, the combined value of CAMP and CSTRAY is approximately 5pF. Note that the location of the OSCin and OSCout pins at the end of the package, facilitates placing the crystal, resistor and the C1 and C2 capacitors very close to the device. Usually, one of the capacitors is in parallel with an adjustable capacitor used to trim the frequency of oscillation. It is important that the total external (to the IC) capacitance seen by either OSCin or OSCout, be no greater than 30pF. In operation, the crystal oscillator will start up with the application of power. If the crystal is in a can that is not grounded it is often possible to monitor the frequency of oscillation by connecting an oscilloscope probe to the can; this technique minimizes any disturbance to the circuit. If a malfunction is indicated, a high impedance, low capacitance, FET probe may be connected to either OSCin or OSCout. Signals typically seen at those points will be very nearly sinusoidal with amplitudes of roughly 300 to 600 mVpp. Some distortion is inevitable and has little bearing on the accuracy of the signal going to the phase detector. Loop Filter Design Because the device is designed for a non-frequency agile synthesizer (i.e., how fast it tunes is not critical) the loop filter design is very straight forward. The current output of the charge pump allows the loop filter to be realized without the need of any active components. The preferred topology for the filter is illustrated below in Figure 5. Figure 5. Loop Filter Xtl Osc Ph/Frq Det Chrg Pump Kp /256 N VCO Ro Co Rx Kv Ca Cx MC12179 The Ro/Co components realize the primary loop filter. Ca is added to the loop filter to provide for reference sideband suppression. If additional suppression is needed, the Rx/Cx realizes an additional filter. In most applications, this will not be necessary. If all components are used, this results in a 4th order PLL, which makes analysis difficult. To simplify this, the loop design will be treated as a 2nd order loop (Ro/Co) and additional guidelines are provided to minimize the influence of the other components. If more rigorous analysis is needed, mathematical/system simulation tools can be used. MC12179 4.2-58 Component Guideline Ca <0.1 x Co Rx >10 x Ro Cx <0.1 x Co The focus of the design effort is to determine what the loop's natural frequency, o, should be. This is determined by Ro, Co, Kp, Kv, and N. Because Kp, Kv, and N are given, it is only necessary to calculate values for Ro and Co. There are 3 considerations in selecting the loop bandwidth: 1) Maximum loop bandwidth for minimum tuning speed 2) Optimum loop bandwidth for best phase noise performance 3) Minimum loop bandwidth for greatest reference sideband suppression Usually a compromise is struck between these 3 cases, however, for the fixed frequency application, minimizing the tuning speed is not a critical parameter. To specify the loop bandwidth for optimal phase noise performance, an understanding of the sources of phase noise in the system and the effect of the loop filter on them is required. There are 3 major sources of phase noise in the phase-locked loop - the crystal reference, the VCO, and the loop contribution. The loop filter acts as a low-pass filter to the crystal reference and the loop contribution equal to the total divide-by-N ratio. This is mathematically described in Figure 10. The loop filter acts as a high-pass filter to the VCO with an in-band gain equal to unity. This is described in Figure 11. The loop contribution includes the PLL IC, as well as noise in the system; supply noise, switching noise, etc. For this example, a loop contribution of 15 dB has been selected, which corresponds to data in Figure 14. The crystal reference and the VCO are characterized as high-order 1/f noise sources. Graphical analysis is used to determine the optimum loop bandwidth. It is necessary to have noise plots from the manufacturer. This method provides a straightforward approximation suitable for quickly estimating the optimal bandwidth. The loop contribution is characterized as white-noise or low-order 1/f noise given in the form of a noise factor which combines all the noise effects into a single value. The phase noise of the Crystal Reference is increased by the noise factor of the PLL IC and related circuitry. It is further increased by the total divide-by-N ratio of the loop. This is illustrated in Figure 6. The point at which the VCO phase noise crosses the amplified phase noise of the Crystal Reference is the point of the optimum loop bandwidth. In the example of Figure 6, the optimum bandwidth is approximately 15 KHz. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12179 Figure 6. Graphical Analysis of Optimum Bandwidth -60 15kHz/2.5 or 6kHz (37.7krads) with a damping coefficient, 1. T(s) is the transfer function of the loop filter. Optimum Bandwidth -70 Figure 8. Design Equations for the 2nd Order System -80 VCO dB -90 T(s) -100 20*log(256) -110 -120 -130 Crystal Reference -150 10 100 1k 10k 100k 1M Hz Figure 7. Closed Loop Frequency Response for = 1 Natural Frequency 10 3dB Bandwidth 0 -10 dB -20 -30 -40 -50 -60 0.1 1 10 Hz 100 NCo K pK v 1k To simplify analysis further a damping factor of 1 will be selected. The normalized closed loop response is illustrated in Figure 7 where the loop bandwidth is 2.5 times the loop natural frequency (the loop natural frequency is the frequency at which the loop would oscillate if it were unstable). Therefore the optimum loop bandwidth is s2 )1 ) RoCos ) 1 ) + ) ) 2z wo s 1 2 wo2 s 1 2z wo s 1 + + [ + + + NCo KpKv 15dB NF of the Noise Contribution from Loop -140 + RoCos RoCo 1 wo2 2z wo wo z Kp Kv NCo woRoCo 2 Co Ro KpKv Nwo2 2z woCo In summary, follow the steps given below: Step 1: Plot the phase noise of crystal reference and the VCO on the same graph. Step 2: Increase the phase noise of the crystal reference by the noise contribution of the loop. Step 3: Convert the divide-by-N to dB (20log 256 - 48 dB) and increase the phase noise of the crystal reference by that amount. Step 4: The point at which the VCO phase noise crosses the amplified phase noise of the Crystal Reference is the point of the optimum loop bandwidth. This is approximately 15 kHz in Figure 6. Step 5: Correlate this loop bandwidth to the loop natural frequency and select components per Figure 8. In this case the 3.0 dB bandwidth for a damping coefficient of 1 is 2.5 times the loop's natural frequency. The relationship between the 3.0 dB loop bandwidth and the loop's "natural" frequency will vary for different values of . Making use of the equations defined above in a math tool or spread sheet is useful. To aid in the use of such a tool the equations are summarized in Figures 9 through 11. Figure 9. Loop Parameter Relations Let: NCo KpKv Let: Ca + w1 2 o + aCo , , RoCo Cx + w2zo + bCo , A + 1 ) a , and B +1)a)b + w13 , RxCx + w14 , Ro(Ca ) Cx) + w15 K3w3 + wo , K4w4 + wo , K5w5 + wo Let: RoCo Let: MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12179 4.2-59 MC12179 Figure 10. Transfer Function for the Crystal Noise in the Frequency Plane T(jw) +N@ 1 ) ) j 2z ww * B ww ) j 2z ww * (AK4 ) K5) ww 1 4 K3K4 w 4 wo o 3 2 o o2 o3 Figure 11. Transfer Function for the VCO Noise in the Frequency Plane T(jw) + 1 * B ww * j (AK4 ) K5) ww * B ww ) j 2z ww * (AK4 ) K5) ww 4 K3K4 w 4 ) K3K4 ww wo 4 o4 2 3 o2 o3 3 2 o o2 o3 overall transfer function of the loop filter. To use these equations in determining the overall transfer function of a PLL multiply the filter's impedance by the gain constant of the phase detector then multiply that by the filter's transfer function (which is unity in the 2nd and 3rd order cases below). Appendix: Derivation of Loop Filter Transfer Function The purpose of the loop filter is to convert the current from the phase detector to a tuning voltage for the VCO. The total transfer function is derived in two steps. Step 1 is to find the voltage generated by the impedance of the loop filter. Step 2 is to find the transfer function from the input of the loop filter to its output. The "voltage" times the "transfer function" is the Figure 12. Overall Transfer Function of the PLL For the 2nd Order PLL: Vp Vt Ro ZLF(s) Co TLF(s) For the 3rd Order PLL: Vt Vp Ro Ca Co ZLF(s) + VVpt(s) +1 , (s) Vp(s) + Kp(s)ZLF(s) + C R CRso2C)os(C) 1) C )s o o a TLF(s) For the 4th Order PLL: + RoCCooss) 1 + VVpt(s) +1 , (s) o Vp(s) a + Kp(s)ZLF(s) Vt Vp Ro Ca Rx Cx Co MC12179 4.2-60 ZLF(s) + C R C R C s3 ) [ (C )(RC o)RCosC))1)C(RRxC(Cxs ))1)C ) ] s2 ) (C ) C ) C )s o o a x x o a x x o o x a o a x TLF(s) + VVpt(s) + (RxCx1s ) 1) (s) , Vp(s) + Kp(s)ZLF(s) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12179 Figure 13. VCO Output Spectrum with MC12179, VCC = 5.0 V (ECLiPTEK 8.9 MHz Crystal and ZCOM 2500 VCO) NOTE: Spurs can be reduced further by narrowing the loop bandwidth of the PLL loop filter and/or adding an extra filter (Rx/Cx) Figure 14. Typical Phase Noise Plot, 2200 MHz VCO (With the MC12179 in a Closed Loop) HP 3048A CARRIER 2200MHz 0 -25 dBc/Hz -50 -75 -100 -125 -150 -170 1k 10k 100k 1M 10M 40M L(f) [dBc/Hz] vs f[Hz] MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12179 4.2-61 MC12179 Figure 15. Typical Charge Pump Current versus Temperature (VCC = Vpp = 5.0 V) 2.5 2.0 SINK 1.5 -40C +25C +85C Sink/Source Current (mA) 1.0 0.5 0.0 -0.5 -1.0 -1.5 SOURCE -2.0 -2.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Voltage at PDout (V) Figure 16. Typical Charge Pump Current versus Voltage (T = 25C) 2.5 2.0 SINK 1.5 4.5V VCC/VPP 5.0V VCC/VPP 5.5V VCC/VPP Sink/Source Current (mA) 1.0 0.5 0.0 -0.5 -1.0 -1.5 SOURCE -2.0 -2.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Voltage at PDout (V) MC12179 4.2-62 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12179 Figure 17. Typical Real Input Impedance versus Input Frequency (For the Fin Input) 100 80 R (Ohms) 60 40 20 0 250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 Frequency (MHz) Figure 18. Typical Imaginary Input Impedance versus Input Frequency (For the Fin Input) 50 25 0 -25 jX (Ohms) -50 -75 -100 -125 -150 -175 -200 -225 -250 250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 Frequency (MHz) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12179 4.2-63 MC12210 Serial Input PLL Frequency Synthesizer The MC12210 is a 2.5 GHz Bipolar monolithic serial input phase locked loop (PLL) synthesizer with pulse-swallow function. It is designed to provide the high frequency local oscillator signal of an RF transceiver in handheld communication applications. Motorola's advanced Bipolar MOSAIC V technology is utilized for low power operation at a minimum supply voltage of 2.7 V. The device is designed for operation over 2.7 to 5.5 V supply range for input frequencies up to 2.5 GHz with a typical current drain of 9.5 mA. The low power consumption makes the MC12210 ideal for handheld battery operated applications such as cellular or cordless telephones, wireless LAN or personal communication services. A dual modulus prescaler is integrated to provide either a 32/33 or 64/65 divide ratio. For additional applications information, two InterActiveApNote documents containing software (based on a Microsoft Excel spreadsheet) and an Application Note are available. Please order DK305/D and DK306/D from the Motorola Literature Distribution Center. * * * * * * * * * * * * MECL PLL COMPONENTS SERIAL PLL FREQUENCY SYNTHESIZER SEMICONDUCTOR TECHNICAL DATA 16 1 D SUFFIX PLASTIC PACKAGE CASE 751B (SO-16) Low Power Supply Current of 8.8 mA Typical for ICC and 0.7 mA Typical for IP Supply Voltage of 2.7 to 5.5 V Dual Modulus Prescaler With Selectable Divide Ratios of 32/33 or 64/65 On-Chip Reference Oscillator/Buffer Programmable Reference Divider Consisting of a Binary 14-Bit Programmable Reference Counter Programmable Divider Consisting of a Binary 7-Bit Swallow Counter and an 11-Bit Programmable Counter Phase/Frequency Detector With Phase Conversion Function 20 1 DT SUFFIX PLASTIC PACKAGE CASE 948E (TSSOP-20) Balanced Charge Pump Outputs Dual Internal Charge Pumps for Bypassing the First Stage of the Loop Filter to Decrease Lock Time Outputs for External Charge Pump Operating Temperature Range of -40 to 85C Space Efficient Plastic Surface Mount SOIC or TSSOP Packages MOSAIC V, Mfax and InterActiveApNote are trademarks of Motorola, Inc. MAXIMUM RATINGS (Note 1) Parameter Symbol Value Unit Power Supply Voltage, Pin 4 (Pin 5 in 20-lead package) VCC -0.5 to 6.0 Vdc Power Supply Voltage, Pin 3 (Pin 4 in 20-lead package) Vp VCC to 6.0 Vdc Tstg -65 to 150 C Storage Temperature Range ORDERING INFORMATION Device MC12210D MC12210DT Operating Temperature Range TA = - 40 to +85C Package SO-16 TSSOP-20 NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. 2. ESD data available upon request. MC12210 4.2-64 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12210 R P 16 15 fOUT BISW 14 13 FC LE DATA CLK 12 11 10 9 Pinout: 16-Lead Package (Top View) 1 2 3 4 5 6 7 8 VCC Do GND LD fIN fOUT BISW FC LE DATA NC CLK 15 14 13 12 11 OSCin OSCout VP R NC P 20 19 18 17 16 Pinout: 20-Lead Package (Top View) 1 OSCin 2 3 NC OSCout 4 5 6 7 8 9 10 VP VCC Do GND LD NC fIN PIN NAMES 16-Lead Pkg Pin No. 20-Lead Pkg Pin No. Oscillator input. A crystal may be connected between OSCin and OSCout. It is highly recommended that an external source be ac coupled into this pin (see text). 1 1 O Oscillator output. Pin should be left open if external source is used 2 3 VP -- Power supply for charge pumps (VP should be greater than or equal to VCC) VP provides power to the Do, BISW and P outputs 3 4 VCC -- Power supply voltage input. Bypass capacitors should be placed as close as possible to this pin and be connected directly to the ground plane. 4 5 Do O Internal charge pump output. Do remains on at all times 5 6 GND -- Ground 6 7 LD O Lock detect, phase comparator output 7 8 fIN I Prescaler input. The VCO signal is AC-coupled into this pin 8 10 CLK I Clock input. Rising edge of the clock shifts data into the shift registers 9 11 DATA I Binary serial data input 10 13 LE I Load enable input (with internal pull up resistor). When LE is HIGH or OPEN, data stored in the shift register is transferred into the appropriate latch (depending on the level of control bit). Also, when LE is HIGH or OPEN, the output of the second internal charge pump is connected to the BISW pin 11 14 FC I Phase control select (with internal pull up resistor). When FC is LOW, the characteristics of the phase comparator and charge pump are reversed. FC also selects fp or fr on the fOUT pin 12 15 BISW O Analog switch output. When LE is HIGH or OPEN ("analog switch is ON") the output of the second charge pump is connected to the BISW pin. When LE is LOW, BISW is high impedance 13 16 fOUT O Phase comparator input signal. When FC is HIGH, fOUT=fr, programmable reference divider output; when FC is LOW, fOUT=fp, programmable divider output 14 17 P O Output for external charge pump. Standard CMOS output level 15 18 R O Output for external charge pump. Standard CMOS output level 16 20 NC -- No connect -- 2, 9, 12, 19 Pin I/O Function OSCin I OSCout MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12210 4.2-65 MC12210 Figure 1. MC12210 Block Diagram 15-BIT SHIFT REGISTER 15 15-BIT LATCH 14 1 PROGRAMMABLE REFERENCE DIVIDER OSCin CRYSTAL OSCILLATOR OSCout fr 14-BIT REFERENCE COUNTER LD PHASE/FREQUENCY DETECTOR FC P R CHARGE PUMP 1 Do CHARGE PUMP 2 BISW LE LE CONTROL BIT DATA DATA 18-BIT SHIFT REGISTER 7 CLK 11 7-BIT LATCH 11-BIT LATCH 7 fIN PRESCALER 32/33 or 64/65 DIVIDER OUTPUT MUX fOUT 11 PROGRAMMABLE DIVIDER 7-BIT SWALLOW A-COUNTER 11-BIT PROGRAMMABLE N-COUNTER fp CONTROL LOGIC MC12210 4.2-66 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12210 DATA ENTRY FORMAT The three wire interface of DATA pin, CLK (clock) pin and LE (load enable) pin controls the serial data input of the 14-bit programmable reference divider plus the prescaler setting bit, and the 18-bit programmable divider. A rising edge of the clock shifts one bit of serial data into the internal shift registers. Depending upon the level of the control bit, stored data is transferred into the latch when load enable pin is HIGH or OPEN. Control bit: "H" = data is transferred into 15-bit latch of programmable reference divider "L" = data is transferred into 18-bit latch of programmable divider WARNING: Switching CLK or DATA after the device is programmed may generate noise on the charge pump outputs which will affect the VCO. PROGRAMMABLE REFERENCE DIVIDER 16-bit serial data format for the programmable reference counter, "R-counter", and prescaler select bit (SW) is shown below. If the control bit is HIGH, data is transferred from the 15-bit shift register into the 15-bit latch which specifies the R divide ratio (8 to 16383) and the prescaler divide ratio (SW=0 for /64/65, SW=1 for /32/33). An R divide ratio less than 8 is prohibited. For Control bit (C) = HIGH: SETTING BIT FOR PRESCALER DIVIDE RATIO (FIRST BIT) MSB CONTROL BIT (LAST BIT) LSB S R R R R R R R R R R R R R R W 14 13 12 11 10 9 8 7 6 5 4 3 2 1 C SETTING BITS FOR DIVIDE RATIO OF PROGRAMMABLE REFERENCE COUNTER (R-COUNTER) DIVIDE RATIO OF PROGRAMMABLE REFERENCE (R) COUNTER Divide Ratio R R 14 R 13 R 12 R 11 R 10 R 9 R 8 R 7 R 6 R 5 R 4 R 3 R 2 R 1 8 0 0 0 0 0 0 0 0 0 0 1 0 0 0 9 0 0 0 0 0 0 0 0 0 0 1 0 0 1 * * * * * * * * * * * * * * * 16383 1 1 1 1 1 1 1 1 1 1 1 1 1 1 PRESCALER SELECT BIT Prescaler Divide Ratio P SW 64/65 0 32/33 1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12210 4.2-67 MC12210 PROGRAMMABLE DIVIDER 19-bit serial data format for the programmable divider is shown below. If the control bit is LOW, data is transferred from the 18-bit shift register into the 18-bit latch which specifies the swallow A-counter divide ratio (0 to 127) and the programmable N-counter divide ratio (16 to 2047). An N-counter divide ratio less than 16 is prohibited. For Control bit (C) = LOW: MSB (FIRST BIT) CONTROL BIT (LAST BIT) LSB N N N N N N N N N N N A A A A A A A 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 SETTING BITS FOR DIVIDE RATIO OF PROGRAMMABLE N-COUNTER C SETTING BITS FOR DIVIDE RATIO OF SWALLOW A-COUNTER DIVIDE RATIO OF PROGRAMMABLE N-COUNTER DIVIDE RATIO OF SWALLOW A-COUNTER Divide Ratio N N 18 N 17 N 16 N 15 N 14 N 13 N 12 N 11 N 10 N 9 N 8 Divide Ratio A A 7 A 6 A 5 A 4 A 3 A 2 A 1 16 0 0 0 0 0 0 1 0 0 0 0 0 0 0 0 0 0 0 0 17 0 0 0 0 0 0 1 0 0 0 1 1 0 0 0 0 0 0 1 * * * * * * * * * * * * * * * * * * * * 2047 1 1 1 1 1 1 1 1 1 1 1 127 1 1 1 1 1 1 1 DIVIDE RATIO SETTING fvco = [(P*N)+A]*fosc / R with A<N fvco: Output frequency of external voltage controlled oscillator (VCO) N: Preset divide ratio of binary 11-bit programmable counter (16 to 2047) A: Preset divide ratio of binary 7-bit swallow counter (0 to 127, A<N) fosc: Output frequency of the external frequency oscillator R: Preset divide ratio of binary 14-bit programmable reference counter (8 to 16383) P: Preset mode of dual modulus prescaler (32 or 64) Figure 2. Serial Data Input Timing DATA N18:MSB N17 N8 A7 A1 C = CONTROL BIT (LAST BIT) (SW:MSB) (R14) (R7) (R6) (R1) (C = CONTROL BIT (LAST BIT)) CLK LE ts(C LE) ts(D) th(D) tCW tEW NOTES:Programmable reference divider data shown in parenthesis. Data shifted into register on rising edge of CLK. ts(D) = Setup Time DATA to CLK ts(D) 10 ns th(D) = Hold Time DATA to CLK th(D) 20 ns tCW = CLK Pulse Width tCW 30 ns tEW = LE Pulse Width tEW 20 ns ts(C LE) = Setup Time CLK to LE ts(C LE) 30 ns MC12210 4.2-68 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12210 PHASE CHARACTERISTICS/VCO CHARACTERISTICS The phase comparator in the MC12210 is a high speed digital phase frequency detector circuit. The circuit determines the "lead" or "lag" phase relationship and time difference between the leading edges of the VCO (fp) signal and the reference (fr) input. Since these edges occur only once per cycle, the detector has a range of 2 radians. The phase comparator outputs are standard CMOS rail-to-rail levels (VP to GND for P and VCC to GND for R), designed for up to 20MHz operation into a 15pF load. These phase comparator outputs can be used along with an external charge pump to enhance the PLL characteristics. The operation of the phase comparator is shown in Figures 3 and 5. The phase characteristics of the phase comparator are controlled by the FC pin. The polarity of the phase comparator outputs, R and P, as well as the charge pump output Do can be reversed by switching the FC pin. Figure 3. Phase/Frequency Detector, Internal Charge Pump and Lock Detect Waveforms H fr L H fp L H LD L Source Z Sink Do (FC = H) BISW (LE = H or Open) H R (FC = H) L H P (FC = H) L Source Z Sink Do (FC = L) BISW (LE = H or Open) H R (FC = L) L H P (FC = L) L NOTES: Do and BISW are current outputs. Phase difference detection range: -2 to +2 Spike difference depends on charge pump characteristics. Also, the spike is output in order to diminish dead band. When fr > fp or fr < fp, spike might not appear depending upon charge pump characteristics. Internal Charge Pump Gain [ ) Isource Isink 4p MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA + 4mA 4p MC12210 4.2-69 MC12210 For FC = HIGH: fr lags fp in phase OR fp>fr in frequency When the phase of fr lags that of fp or the frequency of fp is greater than fr, the P output will remain in a HIGH state while the R output will pulse from LOW to HIGH. The output pulse will reach a minimum 50% duty cycle under a 180 out of phase condition. The signal on R indicates to the VCO to decrease in frequency to bring the loop into lock. fr leads fp in phase OR fp<fr in frequency When the phase of fr leads that of fp or the frequency of fp is less than fr, the R output will remain in a LOW state while the P output pulses from HIGH to LOW. The output pulse will reach a minimum 50% duty cycle under a 180 out of phase condition. The signal on P indicates to the VCO to increase in frequency to bring the loop to lock. fr = fp in phase and frequency When the phase and frequency of fr and fp are equal, the output P will remain in a HIGH state and R will remain in a LOW state except for voltage spikes when signals are in phase. This situation indicates that the loop is in lock and the phase comparator will maintain the loop in its locked state. When FC = LOW, the operation of the phase comparator is reversed from the above explanation. For FC = LOW: fr lags fp in phase OR fp>fr in frequency When the phase of fr lags that of fp or the frequency of fp is greater than fr, the R output will remain in a LOW state while the P output will pulse from HIGH to LOW. The output pulse will reach a minimum 50% duty cycle under a 180 out of phase condition. The signal on P indicates to the VCO to increase in frequency to bring the loop into lock. fr leads fp in phase OR fp<fr in frequency When the phase of fr leads that of fp or the frequency of fp is less than fr, the P output will remain in a HIGH state while the R output pulses from LOW to HIGH. The output pulse will reach a minimum 50% duty cycle under a 180 out of phase condition. The signal on R indicates to the VCO to decrease in frequency to bring the loop to lock. fr = fp in phase and frequency When the phase and frequency of fr and fp are equal, the output P will remain in a HIGH state and R will remain in a LOW state except for voltage spikes when signals are in phase. This situation indicates that the loop is in lock and the phase comparator will maintain the loop in its locked state. The FC pin controls not only the phase characteristics, but also controls the fOUT test pin. The FC pin permits the user to monitor either of the phase comparator input signals, fr or fp, at the fOUT output providing a test mode where the programming of the dividers and the output of the counters can be checked. When FC is HIGH, fOUT = fr, the programmable reference divider output. When FC is LOW, fOUT = fp, the programmable divider output. Hence, If VCO characteristics are like (1), FC should be set HIGH or OPEN. fOUT = fr If VCO characteristics are like (2), FC should be set LOW. fOUT = fp Figure 4. VCO Characteristics VCO OUTPUT FREQUENCY (1) Figure 5. Phase Comparator, Internal Charge Pump, and fOUT Characteristics FC = HIGH or OPEN (2) FC = LOW Do R P fOUT Do R P fOUT fp < fr H L L fr L H H fp fp > fr L H H fr H L L fp fp = fr Z L H fr Z L H fp NOTES:Z = High impedance When LE is HIGH or Open, BISW has the same characteristics as Do. VCO INPUT VOLTAGE MC12210 4.2-70 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12210 Figure 6. Detailed Phase Comparator Block Diagram fr UP 0 P R 1 fp PHASE FREQUENCY DETECTOR 0 DOWN R V 1 LD PHASE COMPARATOR CHARGE PUMP 1 Do CHARGE PUMP 2 BISW FC LE LOCK DETECT The Lock Detect (LD) output pin provides a LOW pulse when fr and fp are not equal in phase or frequency. The output is normally HIGH. LD is designed to be the logical NORing of the phase frequency detector's outputs UP and DOWN. See Figure 6. In typical applications the output signal drives external circuitry which provides a steady LOW signal when the loop is locked. See Figure 9. OSCILLATOR INPUT For best operation, an external reference oscillator is recommended. The signal should be AC-coupled to the OSCin pin through a coupling capacitor. In this case, no connection to OSCout is required. The magnitude of the AC-coupled signal must be between 500 and 2200 mV peak-to-peak. To optimize the phase noise of the PLL when used in this mode, the input signal amplitude should be closer to the upper specification limit. This maximizes the slew rate of the signal as it switches against the internal voltage reference. The device incorporates an on-chip reference oscillator/buffer so that an external parallel-resonant fundamental crystal can be connected between OSCin and OSCout. External capacitor C1 and C2 as shown in Figure 10 are required to set the proper crystal load capacitance and oscillator frequency. The values of the capacitors are dependent on the crystal chosen (up to a maximum of 30 pF each including parasitic and stray capacitance). However, using the on-chip reference oscillator greatly increases the synthesized phase noise. DUAL INTERNAL CHARGE PUMPS ("ANALOG SWITCH") Due to the pure Bipolar nature of the MC12210 design, the "analog switch" function is implemented with dual internal charge pumps. The loop filter time constant can be decreased by bypassing the first stage of the loop filter with the charge pump output BISW as shown in Figure 7 below. This enables the VCO to lock in a shorter amount of time. When LE is HIGH or OPEN ("analog switch is ON"), the output of the second internal charge pump is connected to the BISW pin, and the Do output is ON. The charge pump 2 output on BISW is essentially equal to the charge pump 1 output on Do. When LE is LOW, BISW is in a high impedance state and Do output is active. Figure 7. "Analog Switch" Block Diagram CHARGE PUMP 1 CHARGE PUMP 2 Do LPF-1 LPF-2 VCO BISW LE MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12210 4.2-71 MC12210 ELECTRICAL CHARACTERISTICS (VCC = 2.7 to 5.5 V; TA = -40 to +85C, unless otherwise noted.) Parameter Supply Current for VCC Supply Current for VP Symbol Min Typ Max Unit ICC - 8.8 13.0 mA - 10.2 16.0 - 0.7 1.1 - 0.8 1.3 FIN 2500 - - - - 500 MHz Note 5 FOSC - 12 20 MHz Crystal Mode - - 40 MHz External Reference Mode IP Operating Frequency fINmax fINmin Operating Frequency (OSCin) Input Sensitivity fIN OSCin Condition Note 1 Note 2 mA Note 3 Note 4 VIN 200 - 1000 mVpp VOSC 500 - 2200 mVpp Input HIGH Voltage CLK, DATA, LE, FC VIH 0.7 VCC - - V Input LOW Voltage CLK, DATA, LE, FC VIL - - 0.3 VCC V VCC = 5.5 V IIH - 1.0 2.0 A VCC = 5.5 V Input HIGH Current (DATA and CLK) Input LOW Current (DATA and CLK) Input Current (OSCin) Input HIGH Current (LE and FC) IIL -10 -5.0 - A VCC = 5.5 V IOSC - - 130 -310 - - A OSCin = VCC OSCin = VCC - 2.2 V IIH - 1.0 2.0 A IIL -75 -60 - A ISource6 ISink6 -2.6 -2.0 -1.4 mA +1.4 +2.0 +2.6 IHi-Z -15 - +15 nA 0.5< VDO < Vp - 0.5 0.5 < VBISW < Vp - 0.5 Output HIGH Voltage (LD, R, P, fOUT) VOH 4.4 - - V VCC = 5.0 V 2.4 - - V VCC = 3.0 V Output LOW Voltage (LD, R, P, fOUT) VOL - - 0.4 V VCC = 5.0 V - - 0.4 V VCC = 3.0 V Input LOW Current (LE and FC) Charge Pump Output Current Do and BISW VDo = Vp/2; Vp = 2.7 V VBISW = Vp/2; Vp = 2.7 V Output HIGH Current (LD, R, P, fOUT) IOH -1.0 - - mA Output LOW Current (LD, R, P, fOUT) 1. VCC = 3.3 V, all outputs open. 2. VCC = 5.5 V, all outputs open. 3. VP = 3.3 V, all outputs open. IOL 1.0 - - mA 4. Vp = 6.0 V, all outputs open. 5. AC coupling, FIN measured with a 1000 pF capacitor. 6. Source current flows out of the pin and sink current flows into the pin. Figure 8. Typical External Charge Pump Circuit Figure 9. Typical Lock Detect Circuit Vp VCC 10 k P 12 k 100 k 33 k EXTERNAL CHARGE PUMP OUTPUT R 12 k LD 0.01 F LOCK DETECT OUTPUT 10 k 10 k MC12210 4.2-72 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12210 Figure 10. Typical Applications Example (16-Pin Package) C1 1 2 R OSCin P OSCout 16 15 3 100 pF 6 LOCK DETECT CIRCUIT (SEE FIGURE 9) FOUT VCC BISW 0.1 F 5 LOCK DETECT VP 14 0.1 F 4 100 pF VCO CHARGE PUMP SELECTION (INTERNAL OR EXTERNAL) C2 VP VCC LOW PASS FILTER (SEE FIGURE 11) EXTERNAL CHARGE PUMP (SEE FIGURE 8) 7 13 MC12210 Do FC GND LE LD DATA 12 11 10 47 k 8 fin CLK 1000 pF FROM CONTROLLER 9 47 k C1, C2: Dependent on Crystal Oscillator Figure 11. Typical Loop Filter BISW Do OR EXTERNAL CHARGE PUMP VCO R C MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC12210 4.2-73 MCH12140 MCK12140 PhaseFrequency Detector The MCH/K12140 is a phase frequency-detector intended for phase-locked loop applications which require a minimum amount of phase and frequency difference at lock. When used in conjunction with the MC12147, MC12148 or MC12149 VCO, a high bandwidth PLL can be realized. The device is functionally compatible with the MC12040 phase-frequency detector, however the MOSAIC III process is used to push the maximum frequency to 800 MHz and significantly reduce the dead zone of the detector. When the Reference (R) and VCO (V) inputs are unequal in frequency and/or phase, the differential UP (U) and DOWN (D) outputs will provide pulse streams which when subtracted and integrated provide an error voltage for control of a VCO. The device is packaged in a small outline, surface mount 8-lead SOIC package. There are two versions of the device to provide I/O compatibility to the two existing ECL standards. The MCH12140 is compatible with MECL10H logic levels while the MCK12140 is compatible to 100K ECL logic levels. This device can also be used in +5.0 V systems. Please refer to Motorola Application Note AN1406/D, "Designing with PECL (ECL at +5.0 V)" for more information. * * * * PHASE-FREQUENCY DETECTOR SEMICONDUCTOR TECHNICAL DATA 8 1 D SUFFIX PLASTIC PACKAGE CASE 751 (SO-8) 800 MHz Typical Bandwidth Small Outline 8-Lead SOIC Package 75 k Internal Input Pulldown Resistors >1000 V ESD Protection For proper operation, the input edge rate of the R and V inputs should be less than 5ns. MOSAIC III and MECL 10H are trademarks of Motorola PIN CONNECTIONS VCC R V VEE 8 7 6 5 1 2 3 4 U U D D LOGIC DIAGRAM U (fR > fV) R R Q U (fR > fV) (Top View) S S R Q D (fV > fR) ORDERING INFORMATION V D (fV > fR) Device MCH1214OD MCK12140D MCH12140 MCK12140 4.2-74 Operating Temperature Range Package TA = -40 to +70C SO-8 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MCH12140 MCK12140 TRUTH TABLE* Input Output Input Output R V U D U D R V U D U D 0 0 1 0 0 1 1 1 X X X X X X X X X X X X X X X X 1 1 1 1 1 0 1 0 0 0 0 0 0 0 1 1 1 1 1 1 1 1 0 0 1 0 1 1 1 1 1 0 1 1 1 1 0 0 0 0 0 0 0 0 1 1 1 1 1 0 1 1 1 1 0 0 0 1 1 0 1 1 1 0 0 1 NOTE: * This is not strictly a functional table; i.e., it does not cover all possible modes of operation. However, it gives a sufficient number of tests to ensure that the device will function properly. H-SERIES DC CHARACTERISTICS (VEE = VEE(min) - VEE(max); VCC = GND1, unless otherwise noted.) -40C Characteristic 0C 25C 70C Symbol Min Max Min Max Min Max Min Max Unit Output HIGH Voltage VOH -1080 -890 -1020 -840 -980 -810 -910 -720 mV Output LOW Voltage VOL -1950 -1650 -1950 -1630 -1950 -1630 -1950 -1595 mV Input HIGH Voltage VIH -1230 -890 -1170 -840 -1130 -810 -1060 -720 mV Input LOW Voltge VIL -1950 -1500 -1950 -1480 -1950 -1480 -1950 -1445 mV Input LOW Current IIL 0.5 -- 0.5 -- 0.5 -- 0.3 -- A NOTE: 1. 10H circuits are designed to meet the DC specifications shown in the table after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse airflow greater than 500lfpm is maintained. Outputs are terminated through a 50 resistor to -2.0V except where otherwise specified on the individual data sheets. K-SERIES DC CHARACTERISTICS (VEE = VEE(min) - VEE(max); VCC = GND1, unless otherwise noted.) -40C Characteristic 0C to 70C Symbol Min Typ Max Min Typ Max Unit Condition Output HIGH Voltage VOH -1085 -1005 -880 -1025 -955 -880 mV VIN = VIH(max) Output LOW Voltage VOL -1830 -1695 -1555 -1810 -1705 -1620 mV or VIL(min) Output HIGH Voltage VOHA -1095 -- -- -1035 -- -- mV VIN = VIH(min) Output LOW Voltage VOLA -- -- -1555 -- -- -1610 mV or VIL(max) Input HIGH Voltage VIH -1165 -- -880 -1165 -- -880 mV Input LOW Voltge VIL -1810 -- -1475 -1810 -- -1475 mV Input LOW Current IIL 0.5 -- -- 0.5 -- -- A NOTE: VIN = VIL(max) 1. This table replaces the three tables traditionally seen in ECL 100K data books. The same DC parameter values at VEE = -4.5V now apply across the full VEE range of -4.2V to -5.5V. Outputs are terminated through a 50 resistor to -2.0V except where otherwise specified on the individual data sheets. ABSOLUTE MAXIMUM RATINGS (Note 1) Characteristic Power Supply (VCC = 0V) Input Voltage (VCC = 0V) Output Current Continuous Surge Operating Temperature Range Operating Range1,2 Symbol Rating Unit VEE -8.0 to 0 VDC VI 0 to -6.0 VDC Iout 50 100 mA TA -40 to +70 C VEE -5.7 to -4.2 V NOTES: 1. Absolute maximum rating, beyond which, device life may be impaired, unless otherwise specified on an individual data sheet. 2. Parametric values specified at: H-Series: -4.20 V to -5.50 V K-Series: -4.94 V to -5.50 V 3. ESD data available upon request. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MCH12140 MCK12140 4.2-75 MCH12140 MCK12140 DC CHARACTERISTICS (VEE = VEE(min) - VEE(max); VCC = GND, unless otherwise noted.) -40C Characteristic Symbol Power Supply Current H K IEE Power Supply Voltage H K VEE Input HIGH Current Min Typ 0C Max -5.2 -4.5 -5.5 -5.5 IIH 70C Min Typ Max Min Typ Max Min Typ Max Unit 38 38 45 45 52 52 38 38 45 45 52 52 38 42 45 50 52 58 mA -4.75 -4.20 -5.2 -4.5 -5.5 -5.5 -4.75 -4.20 -5.2 -4.5 -5.5 -5.5 -4.75 -4.20 -5.2 -4.5 -5.5 -5.5 V 150 A Max Unit ps 45 45 -4.75 -4.20 25C 150 150 150 AC CHARACTERISTICS (VEE = VEE(min) - VEE(max); VCC = GND, unless otherwise noted.) -40C Characteristic Symbol Maximum Toggle Frequency FMAX Propagation Delay to Output tPLH tPHL R to D R to U V to D V to U Output Rise/Fall Times Q (20 to 80%) Min tr tf Typ 0C Max Min Typ 800 650 800 440 330 330 440 320 210 210 320 440 330 330 440 225 100 225 25C Max Min Typ 650 800 580 470 470 580 320 210 210 320 440 330 330 440 350 100 225 70C Max Min Typ 650 800 580 470 470 580 360 240 240 360 480 360 360 480 620 500 500 620 350 100 225 350 ps APPLICATIONS INFORMATION The 12140 is a high speed digital circuit used as a phase comparator in an analog phase-locked loop. The device determines the "lead" or "lag" phase relationship and time difference between the leading edges of a VCO (V) signal and a Reference (R) input. Since these edges occur only once per cycle, the detector has a range of 2 radians. The operation of the 12140 can best be described using the plots of Figure 1. Figure 1 plots the average value of U, D and the difference between U and D versus the phase difference between the V and R inputs. There are four potential relationships between V and R: R lags or leads V and the frequency of R is less than or greater than the frequency of V. Under these four conditions the 12140 will function as follows: Figure 1. Average Output Voltage versus Phase Difference Fv > Fr -2 R lags V U R leads V - Fv < Fr 2 VOH VOH - VOL 2 D VOH -2 - 2 U-D -2 - VOH - VOL 2 VOH - VOL 2 2 R lags V in phase When the R and V inputs are equal in frequency and the phase of R lags that of V the U output will stay HIGH while the D output will pulse from HIGH to LOW. The magnitude of the pulse will be proportional to the phase difference between the V and R inputs reaching a minimum 50% duty cycle under a 180 out of phase condition. The signal on D indicates to the VCO to decrease in frequency to bring the loop into lock. V frequency > R frequency When the frequency of V is greater than that of R the 12140 behaves in a simlar fashion as above. Again the signal on D indicates that the VCO frequency must be decreased to bring the loop into lock. R leads V in phase When the R and V inputs are equal in frequency and the phase of R leads that of V the D output will stay HIGH while the U output pulses from HIGH to LOW. The magnitude of the pulse will be proportional to the phase difference between the V and R inputs reaching a minimum 50% duty cycle under a 180 out of phase condition. The signal on U indicates to the VCO to increase in frequency to bring the loop into lock. V frequency < R frequency When the frequency of V is less than that of R the 12140 behaves in a simlar fashion as above. Again the signal on U indicates that the VCO frequency must be decreased to bring the loop into lock. From Figure 1 when V and R are at the same frequency and in phase the value of U - D is zero thus providing a zero error voltage to the VCO. This situation indicates the loop is in lock and the 12140 action will maintain the loop in its locked state. VOL - VOH 2 MCH12140 MCK12140 4.2-76 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC145151-2 MC145152-2 MC145157-2 MC145158-2 PLL Frequency Synthesizer Family CMOS The devices described in this document are typically used as low-power, phase-locked loop frequency synthesizers. When combined with an external low-pass filter and voltage-controlled oscillator, these devices can provide all the remaining functions for a PLL frequency synthesizer operating up to the device's frequency limit. For higher VCO frequency operation, a down mixer or a prescaler can be used between the VCO and the synthesizer IC. These frequency synthesizer chips can be found in the following and other applications: CATV TV Tuning AM/FM Radios Scanning Receivers Two-Way Radios Amateur Radio /R OSC CONTROL LOGIC /A /N / P/P + 1 VCO OUTPUT FREQUENCY CONTENTS Page DEVICE DETAIL SHEETS MC145151-2 Parallel-Input, Single-Modulus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC145152-2 Parallel-Input, Dual-Modulus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC145157-2 Serial-Input, Single-Modulus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MC145158-2 Serial-Input, Dual-Modulus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-78 4.2-81 4.2-85 4.2-88 FAMILY CHARACTERISTICS Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . AC Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Timing Requirements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Frequency Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Phase Detector/Lock Detector Output Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-91 4.2-91 4.2-93 4.2-94 4.2-95 4.2-95 DESIGN CONSIDERATIONS Phase-Locked Loop -- Low-Pass Filter Design . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-96 Crystal Oscillator Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-97 Dual-Modulus Prescaling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.2-98 REV 4 12/99 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145151-2 4.2-77 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC145151-2 Parallel-Input PLL Frequency Synthesizer P SUFFIX PLASTIC DIP CASE 710 Interfaces with Single-Modulus Prescalers 28 The MC145151-2 is programmed by 14 parallel-input data lines for the N counter and three input lines for the R counter. The device features consist of a reference oscillator, selectable-reference divider, digital-phase detector, and 14-bit programmable divide-by-N counter. The MC145151-2 is an improved-performance drop-in replacement for the MC145151-1. The power consumption has decreased and ESD and latch-up performance have improved. * * * * * * * * * * * * Operating Temperature Range: - 40 to 85C Low Power Consumption Through Use of CMOS Technology 3.0 to 9.0 V Supply Range On- or Off-Chip Reference Oscillator Operation Lock Detect Signal / N Counter Output Available Single Modulus/Parallel Programming 8 User-Selectable / R Values: 8, 128, 256, 512, 1024, 2048, 2410, 8192 / N Range = 3 to 16383 "Linearized" Digital Phase Detector Enhances Transfer Function Linearity Two Error Signal Options: Single-Ended (Three-State) or Double-Ended Chip Complexity: 8000 FETs or 2000 Equivalent Gates 1 DW SUFFIX SOG PACKAGE CASE 751F 28 1 ORDERING INFORMATION MC145151P2 MC145151DW2 Plastic DIP SOG Package PIN ASSIGNMENT fin 1 28 LD VSS 2 27 OSCin VDD 3 26 OSCout PDout 4 25 N11 RA0 5 24 N10 RA1 6 23 N13 RA2 7 22 N12 R 8 21 T/R V 9 20 N9 fV 10 19 N8 N0 11 18 N7 N1 12 17 N6 N2 13 16 N5 N3 14 15 N4 REV 1 8/95 MC145151-2 4.2-78 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145151-2 BLOCK DIAGRAM RA2 RA1 RA0 OSCout 14 x 8 ROM REFERENCE DECODER LOCK DETECT 14 LD 14-BIT / R COUNTER OSCin PHASE DETECTOR A PDout 14-BIT / N COUNTER fin VDD TRANSMIT OFFSET ADDER T/R V PHASE DETECTOR B 14 R fV N13 N11 N9 N7 N6 N4 N2 N0 NOTE: N0 - N13 inputs and inputs RA0, RA1, and RA2 have pull-up resistors that are not shown. sure that inputs left open remain at a logic 1 and require only an SPST switch to alter data to the zero state. PIN DESCRIPTIONS INPUT PINS fin Frequency Input (Pin 1) T/R Transmit/Receive Offset Adder Input (Pin 21) Input to the / N portion of the synthesizer. fin is typically derived from loop VCO and is ac coupled into the device. For larger amplitude signals (standard CMOS logic levels) dc coupling may be used. This input controls the offset added to the data provided at the N inputs. This is normally used for offsetting the VCO frequency by an amount equal to the IF frequency of the transceiver. This offset is fixed at 856 when T/R is low and gives no offset when T/R is high. A pull-up resistor ensures that no connection will appear as a logic 1 causing no offset addition. RA0 - RA2 Reference Address Inputs (Pins 5, 6, 7) These three inputs establish a code defining one of eight possible divide values for the total reference divider, as defined by the table below. Pull-up resistors ensure that inputs left open remain at a logic 1 and require only a SPST switch to alter data to the zero state. RA2 RA1 RA0 Total Divide Value 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 8 128 256 512 1024 2048 2410 8192 Reference Address Code N0 - N11 N Counter Programming Inputs (Pins 11 - 20, 22 - 25) These inputs provide the data that is preset into the / N counter when it reaches the count of zero. N0 is the least significant and N13 is the most significant. Pull-up resistors en- OSCin, OSCout Reference Oscillator Input/Output (Pins 27, 26) These pins form an on-chip reference oscillator when connected to terminals of an external parallel resonant crystal. Frequency setting capacitors of appropriate value must be connected from OSC in to ground and OSC out to ground. OSC in may also serve as the input for an externally-generated reference signal. This signal is typically ac coupled to OSC in, but for larger amplitude signals (standard CMOS logic levels) dc coupling may also be used. In the external reference mode, no connection is required to OSC out. OUTPUT PINS PDout Phase Detector A Output (Pin 4) Three-state output of phase detector for use as loop-error signal. Double-ended outputs are also available for this purpose (see V and R). Frequency fV > fR or fV Leading: Negative Pulses Frequency fV < fR or fV Lagging: Positive Pulses Frequency fV = fR and Phase Coincidence: High-Impedance State MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145151-2 4.2-79 R , V Phase Detector B Outputs (Pins 8, 9) nally connected to the phase detector input. With this output available, the / N counter can be used independently. These phase detector outputs can be combined externally for a loop-error signal. A single-ended output is also available for this purpose (see PDout ). If frequency fV is greater than fR or if the phase of fV is leading, then error information is provided by V pulsing low. R remains essentially high. If the frequency fV is less than fR or if the phase of fV is lagging, then error information is provided by R pulsing low. V remains essentially high. If the frequency of fV = fR and both are in phase, then both V and R remain high except for a small minimum time period when both pulse low in phase. LD Lock Detector Output (Pin 28) Essentially a high level when loop is locked (fR, fV of same phase and frequency). Pulses low when loop is out of lock. POWER SUPPLY VDD Positive Power Supply (Pin 3) The positive power supply potential. This pin may range from + 3 to + 9 V with respect to VSS. VSS Negative Power Supply (Pin 2) fV N Counter Output (Pin 10) The most negative supply potential. This pin is usually ground. This is the buffered output of the / N counter that is inter- TYPICAL APPLICATIONS 2.048 MHz OSCin OSCout fin NC NC RA2 RA1 RA0 MC145151-2 VOLTAGE CONTROLLED OSCILLATOR PDout N13 N12 N11 N10 N9 N8 N7 N6 N5 N4 N3 N2 N1 N0 5 - 5.5 MHz 0 1 1 1 0 0 0 1 0 0 0 = 5 MHz 1 0 1 0 1 1 1 1 1 0 0 = 5.5 MHz Figure 1. 5 MHz to 5.5 MHz Local Oscillator Channel Spacing = 1 kHz LOCK DETECT SIGNAL "1" OSCout RA2 +V REF. OSC. 10.0417 MHz (ON-CHIP OSC. OPTIONAL) OSCin VDD VSS "1" "0" RA1 RA0 LD fV PDout R fV fin MC145151-2 T/R CHOICE OF DETECTOR ERROR SIGNALS LOOP FILTER T: 13.0833 - 18.0833 MHz R: 9.5167 - 14.5167 MHz TRANSMIT (ADDS 856 TO / N VALUE) VCO X6 T: 73.3333 - 78.3333 MHz R: 69.7667 - 74.7667 MHz DOWN MIXER "0" "0" "1" RECEIVE TRANSMIT: 440.0 - 470.0 MHz RECEIVE: 418.6 - 448.6 MHz (25 kHz STEPS) CHANNEL PROGRAMMING / N = 2284 TO 3484 X6 60.2500 MHz NOTES: 1. fR = 4.1667 kHz; / R = 2410; 21.4 MHz low side injection during receive. 2. Frequency values shown are for the 440 - 470 MHz band. Similar implementation applies to the 406 - 440 MHz band. For 470 - 512 MHz, consider reference oscillator frequency X9 for mixer injection signal (90.3750 MHz). Figure 2. Synthesizer for Land Mobile Radio UHF Bands MC145151-2 Data Sheet Continued on Page 4.2-91 MC145151-2 4.2-80 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC145152-2 Parallel-Input PLL Frequency Synthesizer P SUFFIX PLASTIC DIP CASE 710 Interfaces with Dual-Modulus Prescalers 28 The MC145152-2 is programmed by sixteen parallel inputs for the N and A counters and three input lines for the R counter. The device features consist of a reference oscillator, selectable-reference divider, two-output phase detector, 10-bit programmable divide-by-N counter, and 6-bit programmable / A counter. The MC145152-2 is an improved-performance drop-in replacement for the MC145152-1. Power consumption has decreased and ESD and latch-up performance have improved. * * * * * * * * * * Operating Temperature Range: - 40 to 85C Low Power Consumption Through Use of CMOS Technology 3.0 to 9.0 V Supply Range On- or Off-Chip Reference Oscillator Operation Lock Detect Signal Dual Modulus/Parallel Programming 8 User-Selectable / R Values: 8, 64, 128, 256, 512, 1024, 1160, 2048 / N Range = 3 to 1023, / A Range = 0 to 63 Chip Complexity: 8000 FETs or 2000 Equivalent Gates See Application Note AN980 1 DW SUFFIX SOG PACKAGE CASE 751F 28 1 ORDERING INFORMATION MC145152P2 MC145152DW2 Plastic DIP SOG Package PIN ASSIGNMENT fin 1 28 LD VSS 2 27 OSCin VDD 3 26 OSCout RA0 4 25 A4 RA1 5 24 A3 RA2 6 23 A0 R 7 22 A2 V 8 21 A1 MC 9 20 N9 A5 10 19 N8 N0 11 18 N7 N1 12 17 N6 N2 13 16 N5 N3 14 15 N4 REV 1 8/95 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145152-2 4.2-81 MC145152-2 BLOCK DIAGRAM RA2 RA1 RA0 OSCout 12 x 8 ROM REFERENCE DECODER 12 LOCK DETECT 12-BIT / R COUNTER OSCin LD MC CONTROL LOGIC PHASE DETECTOR V R fin 6-BIT / A COUNTER A5 A3 A2 10-BIT / N COUNTER A0 N0 N2 N4 N5 N7 N9 NOTE: N0 - N9, A0 - A5, and RA0 - RA2 have pull-up resistors that are not shown. Prescaling section). The A inputs all have internal pull-up resistors that ensure that inputs left open will remain at a logic 1. PIN DESCRIPTIONS INPUT PINS fin Frequency Input (Pin 1) Input to the positive edge triggered / N and / A counters. fin is typically derived from a dual-modulus prescaler and is ac coupled into the device. For larger amplitude signals (standard CMOS logic levels) dc coupling may be used. RA0, RA1, RA2 Reference Address Inputs (Pins 4, 5, 6) These three inputs establish a code defining one of eight possible divide values for the total reference divider. The total reference divide values are as follows: OSCin, OSCout Reference Oscillator Input/Output (Pins 27, 26) These pins form an on-chip reference oscillator when connected to terminals of an external parallel resonant crystal. Frequency setting capacitors of appropriate value must be connected from OSC in to ground and OSC out to ground. OSC in may also serve as the input for an externally-generated reference signal. This signal is typically ac coupled to OSC in, but for larger amplitude signals (standard CMOS logic levels) dc coupling may also be used. In the external reference mode, no connection is required to OSCout. OUTPUT PINS RA2 RA1 RA0 Total Divide Value 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 8 64 128 256 512 1024 1160 2048 Reference Address Code N0 - N9 N Counter Programming Inputs (Pins 11 - 20) The N inputs provide the data that is preset into the / N counter when it reaches the count of 0. N0 is the least significant digit and N9 is the most significant. Pull-up resistors ensure that inputs left open remain at a logic 1 and require only a SPST switch to alter data to the zero state. A0 - A5 A Counter Programming Inputs (Pins 23, 21, 22, 24, 25, 10) The A inputs define the number of clock cycles of fin that require a logic 0 on the MC output (see Dual-Modulus MC145152-2 4.2-82 R , V Phase Detector B Outputs (Pins 7, 8) These phase detector outputs can be combined externally for a loop-error signal. If the frequency fV is greater than fR or if the phase of fV is leading, then error information is provided by V pulsing low. R remains essentially high. If the frequency fV is less than fR or if the phase of fV is lagging, then error information is provided by R pulsing low. V remains essentially high. If the frequency of fV = fR and both are in phase, then both V and R remain high except for a small minimum time period when both pulse low in phase. MC Dual-Modulus Prescale Control Output (Pin 9) Signal generated by the on-chip control logic circuitry for controlling an external dual-modulus prescaler. The MC level will be low at the beginning of a count cycle and will remain low until the / A counter has counted down from its programmed value. At this time, MC goes high and remains high until the / N counter has counted the rest of the way down from its programmed value (N - A additional counts since both / N and / A are counting down during the first MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA portion of the cycle). MC is then set back low, the counters preset to their respective programmed values, and the above sequence repeated. This provides for a total programmable divide value (NT) = N * P + A where P and P + 1 represent the dual-modulus prescaler divide values respectively for high and low MC levels, N the number programmed into the / N counter, and A the number programmed into the / A counter. POWER SUPPLY LD Lock Detector Output (Pin 28) VSS Negative Power Supply (Pin 2) Essentially a high level when loop is locked (fR, fV of same phase and frequency). Pulses low when loop is out of lock. The most negative supply potential. This pin is usually ground. VDD Positive Power Supply (Pin 3) The positive power supply potential. This pin may range from + 3 to + 9 V with respect to VSS. TYPICAL APPLICATIONS NO CONNECTS "1" "1" "1" LOCK DETECT SIGNAL 10.24 MHz NOTE 1 R2 OSCout RA2 RA1 RA0 LD R OSCin V R1 - R1 MC145152-2 +V VDD MC VSS fin N9 N0 A5 C 150 - 175 MHz 5 kHz STEPS VCO + R2 MC33171 NOTE 2 C A0 CHANNEL PROGRAMMING MC12017 / 64/65 PRESCALER NOTES: 1. Off-chip oscillator optional. 2. The R and V outputs are fed to an external combiner/loop filter. See the Phase-Locked Loop -- Low-Pass Filter Design page for additional information. The R and V outputs swing rail-to-rail. Therefore, the user should be careful not to exceed the common mode input range of the op amp used in the combiner/loop filter. Figure 1. Synthesizer for Land Mobile Radio VHF Bands MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145152-2 4.2-83 REF. OSC. 15.360 MHz (ON-CHIP OSC. OPTIONAL) RECEIVER 2ND L.O. 30.720 MHz NO CONNECTS X2 "1" "1" "1" R2 OSCout RA2 RA1 RA0 +V VDD VSS LD R OSCin MC145152-2 NOTE 5 V MC fin N9 N0 A5 CHANNEL PROGRAMMING RECEIVER FIRST L.O. 825.030 844.980 MHz (30 kHz STEPS) LOCK DETECT SIGNAL A0 C R1 - X4 NOTE 6 VCO R1 + NOTE 7 R2 C TRANSMITTER MODULATION MC12017 / 64/65 PRESCALER NOTE 6 X4 NOTE 6 TRANSMITTER SIGNAL 825.030 844.980 MHz (30 kHz STEPS) NOTES: 1. Receiver 1st I.F. = 45 MHz, low side injection; Receiver 2nd I.F. = 11.7 MHz, low side injection. 2. Duplex operation with 45 MHz receiver/transmit separation. 3. fR = 7.5 kHz; / R = 2048. 4. Ntotal = N 64 + A = 27501 to 28166; N = 429 to 440; A = 0 to 63. 5. MC145158-2 may be used where serial data entry is desired. 6. High frequency prescalers (e.g., MC12018 [520 MHz] and MC12022 [1 GHz]) may be used for higher frequency VCO and fref implementations. 7. The R and V outputs are fed to an external combiner/loop filter. See the Phase-Locked Loop -- Low-Pass Filter Design page for additional information. The R and V outputs swing rail-to-rail. Therefore, the user should be careful not to exceed the common mode input range of the op amp used in the combiner/loop filter. Figure 2. 666-Channel, Computer-Controlled, Mobile Radiotelephone Synthesizer for 800 MHz Cellular Radio Systems MC145152-2 Data Sheet Continued on Page 4.2-91 MC145152-2 4.2-84 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC145157-2 Serial-Input PLL Frequency Synthesizer P SUFFIX PLASTIC DIP CASE 648 Interfaces with Single-Modulus Prescalers 16 The MC145157-2 has a fully programmable 14-bit reference counter, as well as a fully programmable / N counter. The counters are programmed serially through a common data input and latched into the appropriate counter latch, according to the last data bit (control bit) entered. The MC145157-2 is an improved-performance drop-in replacement for the MC145157-1. Power consumption has decreased and ESD and latch-up performance have improved. * * * * * * * * * * * * Operating Temperature Range: - 40 to 85C Low Power Consumption Through Use of CMOS Technology 3.0 to 9.0 V Supply Range Fully Programmable Reference and / N Counters / R Range = 3 to 16383 / N Range = 3 to 16383 fV and fR Outputs Lock Detect Signal Compatible with the Serial Peripheral Interface (SPI) on CMOS MCUs "Linearized" Digital Phase Detector Single-Ended (Three-State) or Double-Ended Phase Detector Outputs Chip Complexity: 6504 FETs or 1626 Equivalent Gates 1 DW SUFFIX SOG PACKAGE CASE 751G 16 1 ORDERING INFORMATION MC145157P2 MC145157DW2 Plastic DIP SOG Package PIN ASSIGNMENT OSCin 1 16 R OSCout 2 15 V fV 3 14 REFout VDD 4 13 fR PDout 5 12 S/Rout VSS 6 11 ENB LD 7 10 DATA fin 8 9 CLK REV 1 8/95 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145157-2 4.2-85 MC145157-2 BLOCK DIAGRAM 14-BIT SHIFT REGISTER 14 ENB fR REFERENCE COUNTER LATCH 14 LOCK DETECT 14-BIT / R COUNTER OSCin PHASE DETECTOR A OSCout REFout 14-BIT / N COUNTER fin 14 PHASE DETECTOR B / N COUNTER LATCH DATA LD PDout V R fV 14 1-BIT CONTROL S/R 14-BIT SHIFT REGISTER S/Rout CLK if the control bit is at a logic low. A logic low on this pin allows the user to change the data in the shift registers without affecting the counters. ENB is normally low and is pulsed high to transfer data to the latches. PIN DESCRIPTIONS INPUT PINS fin Frequency Input (Pin 8) Input frequency from VCO output. A rising edge signal on this input decrements the / N counter. This input has an inverter biased in the linear region to allow use with ac coupled signals as low as 500 mV p-p. For larger amplitude signals (standard CMOS logic levels), dc coupling may be used. CLK, DATA Shift Clock, Serial Data Inputs (Pins 9, 10) MSB LSB CONTROL Each low-to-high transition of the clock shifts one bit of data into the on-chip shift registers. The last data bit entered determines which counter storage latch is activated; a logic 1 selects the reference counter latch and a logic 0 selects the / N counter latch. The entry format is as follows: FIRST DATA BIT INTO SHIFT REGISTER ENB Latch Enable Input (Pin 11) A logic high on this pin latches the data from the shift register into the reference divider or / N latches depending on the control bit. The reference divider latches are activated if the control bit is at a logic high and the / N latches are activated MC145157-2 4.2-86 OSCin, OSCout Reference Oscillator Input/Output (Pins 1, 2) These pins form an on-chip reference oscillator when connected to terminals of an external parallel resonant crystal. Frequency setting capacitors of appropriate value must be connected from OSC in to ground and OSC out to ground. OSC in may also serve as the input for an externally-generated reference signal. This signal is typically ac coupled to OSC in, but for larger amplitude signals (standard CMOS logic levels) dc coupling may also be used. In the external reference mode, no connection is required to OSC out. OUTPUT PINS PDout Single-Ended Phase Detector A Output (Pin 5) This single-ended (three-state) phase detector output produces a loop-error signal that is used with a loop filter to control a VCO. Frequency fV > fR or fV Leading: Negative Pulses Frequency fV < fR or fV Lagging: Positive Pulses Frequency fV = fR and Phase Coincidence: High-Impedance State R , V Double-Ended Phase Detector B Outputs (Pins 16, 15) These outputs can be combined externally for a loop-error signal. A single-ended output is also available for this purpose (see PDout ). MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA If frequency fV is greater than fR or if the phase of fV is leading, then error information is provided by V pulsing low. R remains essentially high. If the frequency fV is less than fR or if the phase of fV is lagging, then error information is provided by R pulsing low. V remains essentially high. If the frequency of fV = fR and both are in phase, then both V and R remain high except for a small minimum time period when both pulse low in phase. f R , fV R Counter Output, N Counter Output (Pins 13, 3) Buffered, divided reference and fin frequency outputs. The fR and fV outputs are connected internally to the / R and / N counter outputs respectively, allowing the counters to be used independently, as well as monitoring the phase detector inputs. LD Lock Detector Output (Pin 7) This output is essentially at a high level when the loop is locked (fR, fV of same phase and frequency), and pulses low when loop is out of lock. REFout Buffered Reference Oscillator Output (Pin 14) This output can be used as a second local oscillator, reference oscillator to another frequency synthesizer, or as the system clock to a microprocessor controller. S/Rout Shift Register Output (Pin 12) This output can be connected to an external shift register to provide band switching, control information, and counter programming code checking. POWER SUPPLY VDD Positive Power Supply (Pin 4) The positive power supply potential. This pin may range from + 3 to + 9 V with respect to VSS. VSS Negative Power Supply (Pin 6) The most negative supply potential. This pin is usually ground. MC145157-2 Data Sheet Continued on Page 4.2-91 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145157-2 4.2-87 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC145158-2 Serial-Input PLL Frequency Synthesizer P SUFFIX PLASTIC DIP CASE 648 Interfaces with Dual-Modulus Prescalers 16 The MC145158-2 has a fully programmable 14-bit reference counter, as well as fully programmable / N and / A counters. The counters are programmed serially through a common data input and latched into the appropriate counter latch, according to the last data bit (control bit) entered. The MC145158-2 is an improved-performance drop-in replacement for the MC145158-1. Power consumption has decreased and ESD and latch-up performance have improved. * * * * * * * * * * * * * Operating Temperature Range: - 40 to 85C Low Power Consumption Through Use of CMOS Technology 3.0 to 9.0 V Supply Range Fully Programmable Reference and / N Counters / R Range = 3 to 16383 / N Range = 3 to 1023 Dual Modulus Capability; / A Range = 0 to 127 fV and fR Outputs Lock Detect Signal Compatible with the Serial Peripheral Interface (SPI) on CMOS MCUs "Linearized" Digital Phase Detector Single-Ended (Three-State) or Double-Ended Phase Detector Outputs Chip Complexity: 6504 FETs or 1626 Equivalent Gates 1 DW SUFFIX SOG PACKAGE CASE 751G 16 1 ORDERING INFORMATION MC145158P2 MC145158DW2 Plastic DIP SOG Package PIN ASSIGNMENT OSCin 1 16 R OSCout 2 15 V fV 3 14 REFout VDD 4 13 fR PDout 5 12 MC VSS 6 11 ENB LD 7 10 DATA fin 8 9 CLK REV 1 8/95 MC145158-2 4.2-88 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145158-2 BLOCK DIAGRAM 14-BIT SHIFT REGISTER 14 ENB fR REFERENCE COUNTER LATCH LOCK DETECT 14 14-BIT / R COUNTER OSCin PHASE DETECTOR A OSCout CONTROL LOGIC REFout 7-BIT / A COUNTER fin 10-BIT / N COUNTER / A COUNTER / N COUNTER LATCH LATCH 7 1-BIT CONTROL S/R PHASE DETECTOR B 10 7 DATA LD PDout V R fV 10 7-BIT S/R MC 10-BIT S/R CLK Input frequency from VCO output. A rising edge signal on this input decrements the / A and / N counters. This input has an inverter biased in the linear region to allow use with ac coupled signals as low as 500 mV p-p. For larger amplitude signals (standard CMOS logic levels), dc coupling may be used. CLK, DATA Shift Clock, Serial Data Inputs (Pins 9, 10) Each low-to-high transition of the CLK shifts one bit of data into the on-chip shift registers. The last data bit entered determines which counter storage latch is activated; a logic 1 selects the reference counter latch and a logic 0 selects the / A, / N counter latch. The data entry format is as follows: MSB LSB CONTROL /R FIRST DATA BIT INTO SHIFT REGISTER MSB fin Frequency Input (Pin 8) LSB CONTROL INPUT PINS /N MSB LSB /A PIN DESCRIPTIONS FIRST DATA BIT INTO SHIFT REGISTER ENB Latch Enable Input (Pin 11) A logic high on this pin latches the data from the shift register into the reference divider or / N, / A latches depending on the control bit. The reference divider latches are activated if the control bit is at a logic high and the / N, / A latches are activated if the control bit is at a logic low. A logic low on this pin allows the user to change the data in the shift registers without affecting the counters. ENB is normally low and is pulsed high to transfer data to the latches. OSCin, OSCout Reference Oscillator Input/Output (Pins 1, 2) These pins form an on-chip reference oscillator when connected to terminals of an external parallel resonant crystal. Frequency setting capacitors of appropriate value must be connected from OSC in to ground and OSC out to ground. OSC in may also serve as the input for an externally-generated reference signal. This signal is typically ac coupled to OSCin, but for larger amplitude signals (standard CMOS logic levels) dc coupling may also be used. In the external reference mode, no connection is required to OSC out. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145158-2 4.2-89 OUTPUT PINS PDout Phase Detector A Output (Pin 5) This single-ended (three-state) phase detector output produces a loop-error signal that is used with a loop filter to control a VCO. Frequency fV > fR or fV Leading: Negative Pulses Frequency fV < fR or fV Lagging: Positive Pulses Frequency fV = fR and Phase Coincidence: High-Impedance State R , V Phase Detector B Outputs (Pins 16, 15) Double-ended phase detector outputs. These outputs can be combined externally for a loop-error signal. A single- ended output is also available for this purpose (see PDout ). If frequency fV is greater than fR or if the phase of fV is leading, then error information is provided by V pulsing low. R remains essentially high. If the frequency fV is less than fR or if the phase of fV is lagging, then error information is provided by R pulsing low. V remains essentially high. If the frequency of fV = fR and both are in phase, then both V and R remain high except for a small minimum time period when both pulse low in phase. MC Dual-Modulus Prescale Control Output (Pin 12) This output generates a signal by the on-chip control logic circuitry for controlling an external dual-modulus prescaler. The MC level is low at the beginning of a count cycle and remains low until the / A counter has counted down from its programmed value. At this time, MC goes high and remains high until the / N counter has counted the rest of the way down from its programmed value (N - A additional counts since both / N and / A are counting down during the first portion of the cycle). MC is then set back low, the counters preset to their respective programmed values, and the above sequence repeated. This provides for a total programmable divide value (NT) = N P + A where P and P + 1 represent the MC145158-2 4.2-90 dual-modulus prescaler divide values respectively for high and low modulus control levels, N the number programmed into the / N counter, and A the number programmed into the / A counter. Note that when a prescaler is needed, the dual- modulus version offers a distinct advantage. The dual- modulus prescaler allows a higher reference frequency at the phase detector input, increasing system performance capability, and simplifying the loop filter design. f R , fV R Counter Output, N Counter Output (Pins 13, 3) Buffered, divided reference and fin frequency outputs. The fR and fV outputs are connected internally to the / R and / N counter outputs respectively, allowing the counters to be used independently, as well as monitoring the phase detector inputs. LD Lock Detector Output (Pin 7) This output is essentially at a high level when the loop is locked (fR, fV of same phase and frequency), and pulses low when loop is out of lock. REFout Buffered Reference Oscillator Output (Pin 14) This output can be used as a second local oscillator, reference oscillator to another frequency synthesizer, or as the system clock to a microprocessor controller. POWER SUPPLY VDD Positive Power Supply (Pin 4) The positive power supply potential. This pin may range from + 3 to + 9 V with respect to VSS. VSS Negative Power Supply (Pin 6) The most negative supply potential. This pin is usually ground. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC14515X-2 FAMILY CHARACTERISTICS AND DESCRIPTIONS MAXIMUM RATINGS* (Voltages Referenced to VSS) Symbol Value Unit - 0.5 to + 10.0 V - 0.5 to VDD + 0.5 V - 0.5 to + 15 V Input or Output Current (DC or Transient), per Pin 10 mA IDD, ISS Supply Current, VDD or VSS Pins 30 mA PD Power Dissipation, per Package 500 mW Tstg Storage Temperature - 65 to + 150 C 260 C VDD Vin, Vout Vout Iin, Iout TL Parameter DC Supply Voltage Input or Output Voltage (DC or Transient) except SW1, SW2 Output Voltage (DC or Transient), SW1, SW2 (Rpull-up = 4.7 k) Lead Temperature, 1 mm from Case for 10 seconds These devices contain protection circuitry to protect against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to these high-impedance circuits. For proper operation, Vin and Vout should be constrained to the range VSS (Vin or Vout) VDD except for SW1 and SW2. SW1 and SW2 can be tied through external resistors to voltages as high as 15 V, independent of the supply voltage. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either VSS or VDD), except for inputs with pull-up devices. Unused outputs must be left open. * Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Electrical Characteristics tables or Pin Descriptions section. Power Dissipation Temperature Derating: Plastic DIP: - 12 mW/C from 65 to 85C SOG Package: - 7 mW/C from 65 to 85C ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS) Symbol VDD Parameter Test Condition Power Supply Voltage Range - 40C 25C 85C VDD V Min Max Min Max Min Max Unit -- 3 9 3 9 3 9 V Iss Dynamic Supply Current fin = OSCin = 10 MHz, 1 V p-p ac coupled sine wave R = 128, A = 32, N = 128 3 5 9 -- -- -- 3.5 10 30 -- -- -- 3 7.5 24 -- -- -- 3 7.5 24 mA ISS Quiescent Supply Current (not including pull-up current component) Vin = VDD or VSS Iout = 0 A 3 5 9 -- -- -- 800 1200 1600 -- -- -- 800 1200 1600 -- -- -- 1600 2400 3200 A Vin Input Voltage -- fin, OSCin Input ac coupled sine wave -- 500 -- 500 -- 500 -- mV p-p VIL Low-Level Input Voltage -- fin, OSCin Vout 2.1 V Vout 3.5 V Vout 6.3 V Input dc coupled square wave 3 5 9 -- -- -- 0 0 0 -- -- -- 0 0 0 -- -- -- 0 0 0 V VIH High-Level Input Voltage -- fin, OSCin Vout 0.9 V Vout 1.5 V Vout 2.7 V Input dc coupled square wave 3 5 9 3.0 5.0 9.0 -- -- -- 3.0 5.0 9.0 -- -- -- 3.0 5.0 9.0 -- -- -- V VIL Low-Level Input Voltage -- except fin, OSCin 3 5 9 -- -- -- 0.9 1.5 2.7 -- -- -- 0.9 1.5 2.7 -- -- -- 0.9 1.5 2.7 V VIH High-Level Input Voltage -- except fin, OSCin 3 5 9 2.1 3.5 6.3 -- -- -- 2.1 3.5 6.3 -- -- -- 2.1 3.5 6.3 -- -- -- V Iin Input Current (fin, OSCin) Vin = VDD or VSS 9 2 50 2 25 2 22 A IIL Input Leakage Current (Data, CLK, ENB -- without pull-ups) Vin = VSS 9 -- - 0.3 -- - 0.1 -- - 1.0 A IIH Input Leakage Current (all inputs except fin, OSCin) Vin = VDD 9 -- 0.3 -- 0.1 -- 1.0 A (continued) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145158-2 4.2-91 DC ELECTRICAL CHARACTERISTICS (continued) - 40C 25C 85C VDD V Min Max Min Max Min Max Unit 9 - 20 - 400 - 20 - 200 - 20 - 170 A -- -- 10 -- 10 -- 10 pF Iout 0 A Vin = VDD 3 5 9 -- -- -- 0.9 1.5 2.7 -- -- -- 0.9 1.5 2.7 -- -- -- 0.9 1.5 2.7 V High-Level Output Voltage -- OSCout Iout 0 A Vin = VSS 3 5 9 2.1 3.5 6.3 -- -- -- 2.1 3.5 6.3 -- -- -- 2.1 3.5 6.3 -- -- -- V VOL Low-Level Output Voltage -- Other Outputs Iout 0 A 3 5 9 -- -- -- 0.05 0.05 0.05 -- -- -- 0.05 0.05 0.05 -- -- -- 0.05 0.05 0.05 V VOH High-Level Output Voltage -- Other Outputs Iout 0 A 3 5 9 2.95 4.95 8.95 -- -- -- 2.95 4.95 8.95 -- -- -- 2.95 4.95 8.95 -- -- -- V Drain-to-Source Breakdown Voltage -- SW1, SW2 Rpull-up = 4.7 k -- 15 -- 15 -- 15 -- V IOL Low-Level Sinking Current -- MC Vout = 0.3 V Vout = 0.4 V Vout = 0.5 V 3 5 9 1.30 1.90 3.80 -- -- -- 1.10 1.70 3.30 -- -- -- 0.66 1.08 2.10 -- -- -- mA IOH High-Level Sourcing Current -- MC Vout = 2.7 V Vout = 4.6 V Vout = 8.5 V 3 5 9 - 0.60 - 0.90 - 1.50 -- -- -- - 0.50 - 0.75 - 1.25 -- -- -- - 0.30 - 0.50 - 0.80 -- -- -- mA IOL Low-Level Sinking Current -- LD Vout = 0.3 V Vout = 0.4 V Vout = 0.5 V 3 5 9 0.25 0.64 1.30 -- -- -- 0.20 0.51 1.00 -- -- -- 0.15 0.36 0.70 -- -- -- mA IOH High-Level Sourcing Current -- LD Vout = 2.7 V Vout = 4.6 V Vout = 8.5 V 3 5 9 - 0.25 - 0.64 - 1.30 -- -- -- - 0.20 - 0.51 - 1.00 -- -- -- - 0.15 - 0.36 - 0.70 -- -- -- mA IOL Low-Level Sinking Current -- SW1, SW2 Vout = 0.3 V Vout = 0.4 V Vout = 0.5 V 3 5 9 0.80 1.50 3.50 -- -- -- 0.48 0.90 2.10 -- -- -- 0.24 0.45 1.05 -- -- -- mA IOL Low-Level Sinking Current -- Other Outputs Vout = 0.3 V Vout = 0.4 V Vout = 0.5 V 3 5 9 0.44 0.64 1.30 -- -- -- 0.35 0.51 1.00 -- -- -- 0.22 0.36 0.70 -- -- -- mA IOH High-Level Sourcing Current -- Other Outputs Vout = 2.7 V Vout = 4.6 V Vout = 8.5 V 3 5 9 - 0.44 - 0.64 - 1.30 -- -- -- - 0.35 - 0.51 - 1.00 -- -- -- - 0.22 - 0.36 - 0.70 -- -- -- mA IOZ Output Leakage Current -- PDout Vout = VDD or VSS Output in Off State 9 -- 0.3 -- 0.1 -- 1.0 A IOZ Output Leakage Current -- SW1, SW2 Vout = VDD or VSS Output in Off State 9 -- 0.3 -- 0.1 -- 3.0 A Cout Output Capacitance -- PDout PDout -- Three-State -- -- 10 -- 10 -- 10 pF Symbol Parameter IIL Pull-up Current (all inputs with pull-ups) Cin Input Capacitance VOL Low-Level Output Voltage -- OSCout VOH V(BR)DSS MC145158-2 4.2-92 Test Condition Vin = VSS MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 10 ns) VDD V Guaranteed Limit 25C Guaranteed Limit - 40 to 85C Maximum Propagation Delay, fin to MC (Figures 1 and 4) 3 5 9 110 60 35 120 70 40 ns Maximum Propagation Delay, ENB to SW1, SW2 (Figures 1 and 5) 3 5 9 160 80 50 180 95 60 ns Output Pulse Width, R, V, and LD with fR in Phase with fV (Figures 2 and 4) 3 5 9 25 to 200 20 to 100 10 to 70 25 to 260 20 to 125 10 to 80 ns tTLH Maximum Output Transition Time, MC (Figures 3 and 4) 3 5 9 115 60 40 115 75 60 ns tTHL Maximum Output Transition Time, MC (Figures 3 and 4) 3 5 9 60 34 30 70 45 38 ns tTLH, tTHL Maximum Output Transition Time, LD (Figures 3 and 4) 3 5 9 180 90 70 200 120 90 ns tTLH, tTHL Maximum Output Transition Time, Other Outputs (Figures 3 and 4) 3 5 9 160 80 60 175 100 65 ns Parameter Symbol tPLH, tPHL tPHL tw Unit SWITCHING WAVEFORMS VDD INPUT 50% -- VSS OUTPUT tw tPHL tPLH R, V, LD* 50% 50% * fR in phase with fV. Figure 1. Figure 2. tTLH ANY OUTPUT tTHL 90% 10% Figure 3. VDD TEST POINT TEST POINT OUTPUT DEVICE UNDER TEST OUTPUT CL* * Includes all probe and fixture capacitance. Figure 4. Test Circuit MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA DEVICE UNDER TEST 15 k CL* * Includes all probe and fixture capacitance. Figure 5. Test Circuit MC145158-2 4.2-93 TIMING REQUIREMENTS (Input tr = tf = 10 ns unless otherwise indicated) Parameter Symbol VDD V Guaranteed Limit 25C Guaranteed Limit - 40 to 85C Unit fclk Serial Data Clock Frequency, Assuming 25% Duty Cycle NOTE: Refer to CLK tw(H) below (Figure 6) 3 5 9 dc to 5.0 dc to 7.1 dc to 10 dc to 3.5 dc to 7.1 dc to 10 MHz tsu Minimum Setup Time, Data to CLK (Figure 7) 3 5 9 30 20 18 30 20 18 ns th Minimum Hold Time, CLK to Data (Figure 7) 3 5 9 40 20 15 40 20 15 ns tsu Minimum Setup Time, CLK to ENB (Figure 7) 3 5 9 70 32 25 70 32 25 ns trec Minimum Recovery Time, ENB to CLK (Figure 7) 3 5 9 5 10 20 5 10 20 ns tw(H) Minimum Pulse Width, CLK and ENB (Figure 6) 3 5 9 50 35 25 70 35 25 ns Maximum Input Rise and Fall Times -- Any Input (Figure 8) 3 5 9 5 4 2 5 4 2 s tr, tf SWITCHING WAVEFORMS -- VDD tw(H) DATA -- VDD CLK, ENB 50% 50% VSS tsu th VSS 1 * 4 fclk -- VDD CLK *Assumes 25% Duty Cycle. 50% LAST CLK tsu FIRST CLK VSS trec -- VDD Figure 6. ENB 50% VSS tt ANY OUTPUT PREVIOUS DATA LATCHED tf -- VDD 90% 10% VSS Figure 7. Figure 8. MC145158-2 4.2-94 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA FREQUENCY CHARACTERISTICS (Voltages References to VSS, CL = 50 pF, Input tr = tf =10 ns unless otherwise indicated) Symbol fi Parameter Input Frequency (fin, OSCin) - 40C 25C 85C VDD V Min Max Min Max Min Max Unit R 8, A 0, N 8 Vin = 500 mV p-p ac coupled sine wave 3 5 9 -- -- -- 6 15 15 -- -- -- 6 15 15 -- -- -- 6 15 15 MHz R 8, A 0, N 8 Vin = 1 V p-p ac coupled sine wave 3 5 9 -- -- -- 12 22 25 -- -- -- 12 20 22 -- -- -- 7 20 22 MHz R 8, A 0, N 8 Vin = VDD to VSS dc coupled square wave 3 5 9 -- -- -- 13 25 25 -- -- -- 12 22 25 -- -- -- 8 22 25 MHz Test Condition NOTE: Usually, the PLL's propagation delay from fin to MC plus the setup time of the prescaler determines the upper frequency limit of the system. The upper frequency limit is found with the following formula: f = P / (tP + tset) where f is the upper frequency in Hz, P is the lower of the dual modulus prescaler ratios, tP is the fin to MC propagation delay in seconds, and tset is the prescaler setup time in seconds. For example, with a 5 V supply, the fin to MC delay is 70 ns. If the MC12028A prescaler is used, the setup time is 16 ns. Thus, if the 64/65 ratio is utilized, the upper frequency limit is f = P / (tP + tset) = 64/(70 + 16) = 744 MHz. fR REFERENCE OSC / R VH VL VH fV FEEDBACK (fin / N) * VL VH HIGH IMPEDANCE PDout VL VH R VL VH V VL VH LD VL VH = High Voltage Level. VL = Low Voltage Level. * At this point, when both fR and fV are in phase, the output is forced to near mid-supply. NOTE: The PDout generates error pulses during out-of-lock conditions. When locked in phase and frequency the output is high and the voltage at this pin is determined by the low-pass filter capacitor. Figure 9. Phase Detector/Lock Detector Output Waveforms MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145158-2 4.2-95 DESIGN CONSIDERATIONS PHASE-LOCKED LOOP -- LOW-PASS FILTER DESIGN A) PDout R -- n = VCO R1 C = V -- F(s) = PDout B) R -- VCO n = R1 R2 V -- R2 PDout -- R V Nn 2KKVCO 1 R1sC + 1 KKVCO NC(R1 + R2) = 0.5 n C F(s) = C) KKVCO NR1C R1 _ n = C +A VCO = R2C + N KKVCO R2sC + 1 (R1 + R2)sC + 1 KKVCO NCR1 nR2C 2 R1 ASSUMING GAIN A IS VERY LARGE, THEN: R2 C F(s) = R2sC + 1 R1sC NOTE: Sometimes R1 is split into two series resistors, each R1 / 2. A capacitor CC is then placed from the midpoint to ground to further filter V and R. The value of CC should be such that the corner frequency of this network does not significantly affect n. The R and V outputs swing rail-to-rail. Therefore, the user should be careful not to exceed the common mode input range of the op amp used in the combiner/loop filter. DEFINITIONS: N = Total Division Ratio in feedback loop K (Phase Detector Gain) = VDD/4 for PDout K (Phase Detector Gain) = VDD/2 for V and R 2fVCO KVCO (VCO Gain) = VVCO for a typical design wn (Natural Frequency) 2fr (at phase detector input). 10 Damping Factor: 1 RECOMMENDED READING: Gardner, Floyd M., Phaselock Techniques (second edition). New York, Wiley-Interscience, 1979. Manassewitsch, Vadim, Frequency Synthesizers: Theory and Design (second edition). New York, Wiley-Interscience, 1980. Blanchard, Alain, Phase-Locked Loops: Application to Coherent Receiver Design. New York, Wiley-Interscience, 1976. Egan, William F., Frequency Synthesis by Phase Lock. New York, Wiley-Interscience, 1981. Rohde, Ulrich L., Digital PLL Frequency Synthesizers Theory and Design. Englewood Cliffs, NJ, Prentice-Hall, 1983. Berlin, Howard M., Design of Phase-Locked Loop Circuits, with Experiments. Indianapolis, Howard W. Sams and Co., 1978. Kinley, Harold, The PLL Synthesizer Cookbook. Blue Ridge Summit, PA, Tab Books, 1980. AN535, Phase-Locked Loop Design Fundamentals, Motorola Semiconductor Products, Inc., 1970. AR254, Phase-Locked Loop Design Articles, Motorola Semiconductor Products, Inc., Reprinted with permission from Electronic Design, 1987. MC145158-2 4.2-96 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CRYSTAL OSCILLATOR CONSIDERATIONS The following options may be considered to provide a reference frequency to Motorola's CMOS frequency synthesizers. Use of a Hybrid Crystal Oscillator Commercially available temperature-compensated crystal oscillators (TCXOs) or crystal-controlled data clock oscillators provide very stable reference frequencies. An oscillator capable of sinking and sourcing 50 A at CMOS logic levels may be direct or dc coupled to OSCin. In general, the highest frequency capability is obtained utilizing a direct-coupled square wave having a rail-to-rail (VDD to VSS) voltage swing. If the oscillator does not have CMOS logic levels on the outputs, capacitive or ac coupling to OSCin may be used. OSCout, an unbuffered output, should be left floating. For additional information about TCXOs and data clock oscillators, please consult the latest version of the eem Electronic Engineers Master Catalog, the Gold Book, or similar publications. C L values. The shunt load capacitance, C L , presented across the crystal can be estimated to be: CL = CinCout + Ca + Co + C1 * C2 C1 + C2 Cin + Cout where Cin = Cout = Ca = CO = 5 pF (see Figure 11) 6 pF (see Figure 11) 1 pF (see Figure 11) the crystal's holder capacitance (see Figure 12) C1 and C2 = external capacitors (see Figure 10) Ca Cin Cout Figure 11. Parasitic Capacitances of the Amplifier RS Design an Off-Chip Reference 1 The user may design an off-chip crystal oscillator using ICs specifically developed for crystal oscillator applications, such as the MC12061 MECL device. The reference signal from the MECL device is ac coupled to OSCin. For large amplitude signals (standard CMOS logic levels), dc coupling is used. OSCout, an unbuffered output, should be left floating. In general, the highest frequency capability is obtained with a direct-coupled square wave having rail-to-rail voltage swing. FREQUENCY SYNTHESIZER Rf OSCin C1 R1* OSCout C2 * May be deleted in certain cases. See text. Figure 10. Pierce Crystal Oscillator Circuit For VDD = 5.0 V, the crystal should be specified for a loading capacitance, CL, which does not exceed 32 pF for frequencies to approximately 8.0 MHz, 20 pF for frequencies in the area of 8.0 to 15 MHz, and 10 pF for higher frequencies. These are guidelines that provide a reasonable compromise between IC capacitance, drive capability, swamping variations in stray and IC input/output capacitance, and realistic CS 1 2 CO 1 Re Xe 2 NOTE: Values are supplied by crystal manufacturer (parallel resonant crystal). Figure 12. Equivalent Crystal Networks Use of the On-Chip Oscillator Circuitry The on-chip amplifier (a digital inverter) along with an appropriate crystal may be used to provide a reference source frequency. A fundamental mode crystal, parallel resonant at the desired operating frequency, should be connected as shown in Figure 10. 2 LS The oscillator can be "trimmed" on-frequency by making a portion or all of C1 variable. The crystal and associated components must be located as close as possible to the OSCin and OSCout pins to minimize distortion, stray capacitance, stray inductance, and startup stabilization time. In some cases, stray capacitance should be added to the value for Cin and Cout. Power is dissipated in the effective series resistance of the crystal, Re, in Figure 12. The drive level specified by the crystal manufacturer is the maximum stress that a crystal can withstand without damage or excessive shift in frequency. R1 in Figure 10 limits the drive level. The use of R1 may not be necessary in some cases (i.e., R1 = 0 ). To verify that the maximum dc supply voltage does not overdrive the crystal, monitor the output frequency as a function of voltage at OSCout. (Care should be taken to minimize loading.) The frequency should increase very slightly as the dc supply voltage is increased. An overdriven crystal will decrease in frequency or become unstable with an increase in supply voltage. The operating supply voltage must be reduced or R1 must be increased in value if the overdriven condition exists. The user should note that the oscillator start-up time is proportional to the value of R1. Through the process of supplying crystals for use with CMOS inverters, many crystal manufacturers have developed expertise in CMOS oscillator design with crystals. Discussions with such manufacturers can prove very helpful (see Table 1). MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145158-2 4.2-97 Table 1. Partial List of Crystal Manufacturers Motorola -- Internet Address http://motorola.com (Search for resonators) United States Crystal Corp. Crystek Crystal Statek Corp. Fox Electronics NOTE: Motorola cannot recommend one supplier over another and in no way suggests that this is a complete listing of crystal manufacturers. DESIGN GUIDELINES RECOMMENDED READING Technical Note TN-24, Statek Corp. Technical Note TN-7, Statek Corp. E. Hafner, "The Piezoelectric Crystal Unit - Definitions and Method of Measurement", Proc. IEEE, Vol. 57, No. 2 Feb., 1969. D. Kemper, L. Rosine, "Quartz Crystals for Frequency Control", Electro-Technology, June, 1969. P. J. Ottowitz, "A Guide to Crystal Selection", Electronic Design, May, 1966. DUAL-MODULUS PRESCALING OVERVIEW The technique of dual-modulus prescaling is well established as a method of achieving high performance frequency synthesizer operation at high frequencies. Basically, the approach allows relatively low-frequency programmable counters to be used as high-frequency programmable counters with speed capability of several hundred MHz. This is possible without the sacrifice in system resolution and performance that results if a fixed (single-modulus) divider is used for the prescaler. In dual-modulus prescaling, the lower speed counters must be uniquely configured. Special control logic is necessary to select the divide value P or P + 1 in the prescaler for the required amount of time (see modulus control definition). Motorola's dual-modulus frequency synthesizers contain this feature and can be used with a variety of dual-modulus prescalers to allow speed, complexity and cost to be tailored to the system requirements. Prescalers having P, P + 1 divide values in the range of / 3// 4 to / 128// 129 can be controlled by most Motorola frequency synthesizers. Several dual-modulus prescaler approaches suitable for use with the MC145152-2, MC145156-2, or MC145158-2 are: MC12009 MC12011 MC12013 MC12015 MC12016 MC12017 MC12018 MC12028A MC12052A MC12054A MC145158-2 4.2-98 / 5// 6 / 8// 9 / 10// 11 / 32// 33 / 40// 41 / 64// 65 / 128// 129 / 32/33 or / 64/65 / 64/65 or / 128/129 / 64/65 or / 128/129 440 MHz 500 MHz 500 MHz 225 MHz 225 MHz 225 MHz 520 MHz 1.1 GHz 1.1 GHz 2.0 GHz The system total divide value, Ntotal (NT) will be dictated by the application: NT = frequency into the prescaler =NP+A frequency into the phase detector N is the number programmed into the / N counter, A is the number programmed into the / A counter, P and P + 1 are the two selectable divide ratios available in the dual-modulus prescalers. To have a range of NT values in sequence, the / A counter is programmed from zero through P - 1 for a particular value N in the / N counter. N is then incremented to N + 1 and the / A is sequenced from 0 through P - 1 again. There are minimum and maximum values that can be achieved for NT. These values are a function of P and the size of the / N and / A counters. The constraint N A always applies. If Amax = P - 1, then Nmin P - 1. Then NTmin = (P - 1) P + A or (P - 1) P since A is free to assume the value of 0. NTmax = Nmax P + Amax To maximize system frequency capability, the dual-modulus prescaler output must go from low to high after each group of P or P + 1 input cycles. The prescaler should divide by P when its modulus control line is high and by P + 1 when its MC is low. For the maximum frequency into the prescaler (fVCOmax), the value used for P must be large enough such that: 1. fVCOmax divided by P may not exceed the frequency capability of fin (input to the / N and / A counters). 2. The period of fVCO divided by P must be greater than the sum of the times: a. Propagation delay through the dual-modulus prescaler. b. Prescaler setup or release time relative to its MC signal. c. Propagation time from fin to the MC output for the frequency synthesizer device. A sometimes useful simplification in the programming code can be achieved by choosing the values for P of 8, 16, 32, or 64. For these cases, the desired value of NT results when NT in binary is used as the program code to the / N and / A counters treated in the following manner: 1. Assume the / A counter contains "a" bits where 2a P. 2. Always program all higher order / A counter bits above "a" to 0. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 3. Assume the / N counter and the / A counter (with all the higher order bits above "a" ignored) combined into a single binary counter of n + a bits in length (n = number of divider stages in the / N counter). The MSB of this "hypothetical" counter is to correspond to the MSB of / N and the LSB is to correspond to the LSB of / A. The system divide value, NT, now results when the value of NT in binary is used to program the "new" n + a bit counter. By using the two devices, several dual-modulus values are achievable (shown in Figure 13). MC DEVICE A DEVICE B DEVICE B DEVICE A MC12009 MC10131 / 20// 21 MC12011 MC12013 / 32// 33 / 40// 41 / 50// 51 / 80// 81 / 100// 101 MC10138 NOTE: MC12009, MC12011, and MC12013 are pin equivalent. MC12015, MC12016, and MC12017 are pin equivalent. Figure 13. Dual-Modulus Values MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145158-2 4.2-99 MC145170-2 PLL Frequency Synthesizer with Serial Interface The new MC145170-2 is pin-for-pin compatible with the MC145170-1. A comparison of the two parts is shown in the table below. The MC145170-2 is recommended for new designs and has a more robust power-on reset (POR) circuit that is more responsive to momentary power supply interruptions. The two devices are actually the same chip with mask options for the POR circuit. The more robust POR circuit draws approximately 20 A additional supply current. Note that the maximum specification of 100 A quiescent supply current has not changed. The MC145170-2 is a single-chip synthesizer capable of direct usage in the MF, HF, and VHF bands. A special architecture makes this PLL easy to program. Either a bit- or byte-oriented format may be used. Due to the patented BitGrabber registers, no address/steering bits are required for random access of the three registers. Thus, tuning can be accomplished via a 2-byte serial transfer to the 16-bit N register. The device features fully programmable R and N counters, an amplifier at the fin pin, on-chip support of an external crystal, a programmable reference output, and both single- and double-ended phase detectors with linear transfer functions (no dead zones). A configuration (C) register allows the part to be configured to meet various applications. A patented feature allows the C register to shut off unused outputs, thereby minimizing noise and interference. In order to reduce lock times and prevent erroneous data from being loaded into the counters, a patented jam-load feature is included. Whenever a new divide ratio is loaded into the N register, both the N and R counters are jam-loaded with their respective values and begin counting down together. The phase detectors are also initialized during the jam load. * Operating Voltage Range: 2.7 to 5.5 V * * * * * * * * Maximum Operating Frequency: 185 MHz @ Vin = 500 mVpp, 4.5 V Minimum Supply 100 MHz @ Vin = 500 mVpp, 3.0 V Minimum Supply Operating Supply Current: 0.6 mA @ 3.0 V, 30 MHz 1.5 mA @ 3.0 V, 100 MHz 3.0 mA @ 5.0 V, 50 MHz 5.8 mA @ 5.0 V, 185 MHz Operating Temperature Range: -40 to 85C CMOS PLL FREQUENCY SYNTHESIZER WITH SERIAL INTERFACE SEMICONDUCTOR TECHNICAL DATA 16 1 P SUFFIX PLASTIC PACKAGE CASE 648 16 16 1 1 D SUFFIX PLASTIC PACKAGE CASE 751B (SOG-16) DT SUFFIX PLASTIC PACKAGE CASE 948C (TSSOP-16) PIN CONNECTIONS R Counter Division Range: 1 and 5 to 32,767 N Counter Division Range: 40 to 65,535 2 16 VDD 15 V 3 14 R 4 13 PDout 12 VSS OSCin OSCout REFout 1 fin Din ENB 6 11 LD CLK 7 Dout 8 10 fV 9 fR Direct Interface to Motorola SPI Serial Data Port See Application Notes AN1207/D and AN1671/D See web site mot-sps.com for MC145170 control software. Select in order, Products, Wireless Semiconductor, Download, then PLL Demo Software. Choose PLLGEN.EXE. 5 (Top View) BitGrabber is a trademark of Motorola Inc. COMPARISION OF THE PLL FREQUENCY SYNTHESIZERS Parameter Minimum Supply Voltage Maximum Input Current, fin Dynamic Characteristics, fin (Figure 23) Power-On Reset Circuit MC145170-2 4.2-100 MC145170-2 MC145170-1 2.7 V 2.5 V 150 A 120 A Unchanged - Improved - ORDERING INFORMATION Device Operating Temp Range MC145170P2 MC145170D2 MC145170DT2 Package Plastic DIP TA = -40 to 85C SOG-16 TSSOP-16 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145170-2 BLOCK DIAGRAM 1 OSCin OSCout 9 fR Control 15-stage R Counter OSC 2 fR 15 4-Stage Reference Divider 3 REFout BitGrabber R Register 15 Bits 3 Lock Detector And Control 11 Phase/Frequency Detector A And Control 13 LD 7 CLK Shift Register And Control Logic 5 Din 8 Dout BitGrabber C Register 8 Bits 16 PDout POR ENB Phase/Frequency Detector B And Control 6 14 15 BitGrabber N Register 16 Bits 16 fin 4 Input AMP 10 fV Control R V fV Pin 16 = VDD Pin 12 = VSS 16-Stage N Counter This device contains 4,800 active transistors. MAXIMUM RATINGS (Voltages Referenced to VSS) Parameter Symbol Value Unit VDD -0.5 to 5.5 V DC Input Voltage Vin -0.5 to VDD + 0.5 V DC Output Voltage Vout -0.5 to VDD + 0.5 V DC Supply Voltage Iin 10 mA DC Output Current, per Pin Iout 20 mA DC Supply Current, VDD and VSS Pins IDD 30 mA Power Dissipation, per Package PD 300 mW Storage Temperature Tstg -65 to 150 C TL 260 C DC Input Current, per Pin Lead Temperature, 1 mm from Case for 10 seconds This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, Vin and Vout should be constrained to the range VSS (Vin or Vout) VDD. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either VSS or VDD). Unused outputs must be left open. NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Electrical Characteristics tables or Pin Descriptions section. 2. ESD data available upon request. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145170-2 4.2-101 MC145170-2 ELECTRICAL CHARACTERISTICS (Voltages Referenced to VSS, TA = -40 to 85C) Parameter Test Condition Power Supply Voltage Range Symbol VDD V Guaranteed Limit Unit VDD - 2.7 to 5.5 V Maximum Low-Level Input Voltage [Note 1] (Din, CLK, ENB, fin) dc Coupling to fin VIL 2.7 4.5 5.5 0.54 1.35 1.65 V Minimum High-Level Input Voltage [Note 1] (Din, CLK, ENB, fin) dc Coupling to fin VIH 2.7 4.5 5.5 2.16 3.15 3.85 V VHys 2.7 5.5 0.15 0.20 V Minimum Hysteresis Voltage (CLK, ENB) Maximum Low-Level Output Voltage (Any Output) Iout = 20 A VOL 2.7 5.5 0.1 0.1 V Minimum High-Level Output Voltage (Any Output) Iout = - 20 A VOH 2.7 5.5 2.6 5.4 V Minimum Low-Level Output Current (PDout, REFout, fR, fV, LD, R, V) Vout = 0.3 V Vout = 0.4 V Vout = 0.5 V IOL 2.7 4.5 5.5 0.12 0.36 0.36 mA Minimum High-Level Output Current (PDout, REFout, fR, fV, LD, R, V) Vout = 2.4 V Vout = 4.1 V Vout = 5.0 V IOH 2.7 4.5 5.5 -0.12 -0.36 -0.36 mA Minimum Low-Level Output Current (Dout) Vout = 0.4 V IOL 4.5 1.6 mA Minimum High-Level Output Current (Dout) Vout = 4.1 V IOH 4.5 -1.6 mA Maximum Input Leakage Current (Din, CLK, ENB, OSCin) Vin = VDD or VSS Iin 5.5 1.0 A Maximum Input Current (fin) Vin = VDD or VSS Iin 5.5 150 A IOZ 5.5 100 nA 5.5 5.0 A Maximum Output Leakage Current (PDout) Vin = VDD or VSS, Output in High-Impedance State (Dout) Maximum Quiescent Supply Current Vin = VDD or VSS; Outputs Open; Excluding fin Amp Input Current Component IDD 5.5 100 A Maximum Operating Supply Current fin = 500 mVpp; OSCin = 1.0 MHz @ 1.0 Vpp; LD, fR, fV, REFout = Inactive and No Connect; OSCout, V, R, PDout = No Connect; Din, ENB, CLK = VDD or VSS Idd - [Note 2] mA NOTES: 1. When dc coupling to the OSCin pin is used, the pin must be driven rail-to-rail. In this case, OSCout should be floated. 2. The nominal values at 3.0 V are 0.6 mA @ 30 MHz, and 1.5 mA @ 100 MHz. The nominal values at 5.0 V are 3.0 mA @ 50 MHz, and 5.8 mA @ 185 MHz. These are not guaranteed limits. MC145170-2 4.2-102 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145170-2 AC INTERFACE CHARACTERISTICS ( TA = -40 to 85C, CL = 50 pF, Input tr = tf = 10 ns, unless otherwise noted.) Symbol Figure No. VDD V Guaranteed Limit fclk 1 2.7 4.5 5.5 dc to 3.0 dc to 4.0 dc to 4.0 MHz Maximum Propagation Delay, CLK to Dout tPLH, tPHL 1, 5 2.7 4.5 5.5 150 85 85 ns Maximum Disable Time, Dout Active to High Impedance tPLZ, tPHZ 2, 6 2.7 4.5 5.5 300 200 200 ns Access Time, Dout High Impedance to Active tPZL, tPZH 2, 6 2.7 4.5 5.5 0 to 200 0 to 100 0 to 100 ns tTLH, tTHL 1, 5 2.7 4.5 5.5 150 50 50 ns 1, 5 2.7 4.5 5.5 900 150 150 ns Cin - 10 pF Cout - 10 pF Unit Parameter Serial Data Clock Frequency (Note: Refer to Clock tw Below) Maximum Output Transition Time, Dout CL = 50 pF CL = 200 pF Maximum Input Capacitance - Din, ENB, CLK Maximum Output Capacitance - Dout Unit TIMING REQUIREMENTS ( TA = -40 to 85C, Input tr = tf = 10 ns, unless otherwise noted.) Parameter Minimum Setup and Hold Times, Din vs CLK Minimum Setup, Hold, and Recovery Times, ENB vs CLK Minimum Inactive-High Pulse Width, ENB Minimum Pulse Width, CLK Maximum Input Rise and Fall Times, CLK Symbol Figure No. VDD V Guaranteed Limit tsu, th 3 2.7 4.5 5.5 55 40 40 ns tsu, th, trec 4 2.7 4.5 5.5 135 100 100 ns tw(H) 4 2.7 4.5 5.5 400 300 300 ns tw 1 2.7 4.5 5.5 166 125 125 ns tr, tf 1 2.7 4.5 5.5 100 100 100 s MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145170-2 4.2-103 MC145170-2 SWITCHING WAVEFORMS Figure 1. tf Figure 2. tr VDD 90% CLK 50% 10% VSS VSS tw tPZL tw 1/fclk tPLH Dout VDD 50% ENB Dout tPLZ High Impedance 50% 10% tPHL tPZH 90% 50% 10% tTLH VSS 90% 50% Dout VDD tPHZ High Impedance tTHL Figure 3. Figure 4. tw(H) VDD Valid VDD ENB 50% 50% Din VSS tsu th VDD 50% CLK 50% First CLK Figure 5. Test Circuit Last CLK Test Point 7.5 k * Includes all probe and fixture capacitance. MC145170-2 4.2-104 VSS Figure 6. Test Circuit Test Point CL * trec VDD CLK VSS Device Under Test VSS th tsu Device Under Test Connect to VDD when testing tPLZ AND tPZL. Connect to VSS when testing tPHZ and tPZH. CL * * Includes all probe and fixture capacitance. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145170-2 LOOP SPECIFICATIONS ( TA = -40 to 85C) VDD V Guaranteed Range Symbol Figure No. Min Max Unit Input Frequency, fin [Note} Vin 500 mVpp Sine Wave, N Counter Set to Divide Ratio Such that fV 2.0 MHz f 7 2.7 3.0 4.5 5.5 5.0 5.0 25 45 80 100 185 185 MHz Input Frequency, OSCin Externally Driven with ac-coupled Signal Vin 1.0 Vpp Sine Wave, OSCout = No Connect, R Counter Set to Divide Ratio Such that fR 2 MHz f 8a 2.7 3.0 4.5 5.5 1.0* 1.0* 1.0* 1.0* 22 25 30 35 MHz Crystal Frequency, OSCin and OSCout C1 30 pF C2 30 pF Includes Stray Capacitance fXTAL 9 2.7 3.0 4.5 5.5 2.0 2.0 2.0 2.0 12 12 15 15 MHz Output Frequency, REFout CL = 30 pF fout 10, 12 2.7 4.5 5.5 dc dc dc - 10 10 MHz 2.7 4.5 5.5 dc dc dc - 2.0 2.0 MHz Parameter Test Condition Operating Frequency of the Phase Detectors f Output Pulse Width, R, V, and LD fR in Phase with fV CL = 50 pF Output Transition Times, R, V, LD, fR, and fV CL = 50 pF tw 11, 12 2.7 4.5 5.5 - 20 16 - 100 90 ns tTLH, tTHL 11, 12 2.7 4.5 5.5 - - - - 65 60 ns Input Capacitance fin Cin - - - 7.0 pF OSCin - - - 7.0 * IF lower frequency is desired, use wave shaping or higher amplitude sinusoidal signal in ac-coupled case. Also, see Figure 22 for dc coupling. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145170-2 4.2-105 MC145170-2 Figure 7. Test Circuit, fin 100 pF Sine Wave Generator fin Test Point fV MC145170-2 Vin 50 * VDD VSS V+ * Characteristic impedance Figure 8. Figure 8a. Test Circuit, OSC Circuit Externally Driven [Note] Figure 8b. Circuit to Eliminate Self-Oscillation, OSC Circuit Externally Driven [Note] V+ 0.01 F Sine Wave Generator OSCin Vin 5.0 M Test Point fR 0.01 F Sine Wave Generator OSCin MC145170-2 Vin OSCout 50 VSS 1.0 M 1.0 M Test Point MC145170-2 OSCout 50 VDD fR VSS V+ VDD V+ No Connect Figure 10. Switching Waveform Figure 9. Test Circuit, OSC Circuit with Crystal OSCin C1 MC145170-2 REFout OSCout VSS VDD C2 1/f REFout Test Point REFout 50% V+ Figure 12. Test Load Circuit Figure 11. Switching Waveform Test Point Output tw Output 50% tTHL NOTE: Device Under Test 90% 10% tTLH CL * * Includes all probe and fixture capacitance. Use the circuit of Figure 8b to eliminate self-oscillation of the OSCin pin when the MC145170-2 has power applied with no external signal applied at Vin. (Self-oscillation is not harmful to the MC145170-2 and does not damage the IC.) MC145170-2 4.2-106 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145170-2 PIN DESCRIPTIONS DIGITAL INTERFACE PINS Din Serial Data Input (Pin 5) The bit stream begins with the most significant bit (MSB) and is shifted in on the low-to-high transition of CLK. The bit pattern is 1 byte (8 bits) long to access the C or configuration register, 2 bytes (16 bits) to access the N register, or 3 bytes (24 bits) to access the R register. Additionally, the R register can be accessed with a 15-bit transfer (see Table 1). An optional pattern which resets the device is shown in Figure 13. The values in the C, N, and R registers do not change during shifting because the transfer of data to the registers is controlled by ENB. The bit stream needs neither address nor steering bits due to the innovative BitGrabber registers. Therefore, all bits in the stream are available to be data for the three registers. Random access of any register is provided (i.e., the registers may be accessed in any sequence). Data is retained in the registers over a supply range of 2.7 to 5.5 V. The formats are shown in Figures 13, 14, 15, and 16. Din typically switches near 50% of VDD to maximize noise immunity. This input can be directly interfaced to CMOS devices with outputs guaranteed to switch near rail-to-rail. When interfacing to NMOS or TTL devices, either a level shifter (MC74HC14A, MC14504B) or pull-up resistor of 1 to 10 k must be used. Parameters to consider when sizing the resistor are worst-case IOL of the driving device, maximum tolerable power consumption, and maximum data rate. Table 1. Register Access (MSBs are shifted in first, C0, N0, and R0 are the LSBs) Number of Clocks Accessed Register Bit Nomenclature 9 to 13 8 16 15 or 24 Other Values 32 Values > 32 See Figure 13 C Register N Register R Register None See Figures 24 -- 31 (Reset) C7, C6, C5, . . ., C0 N15, N14, N13, . . ., N0 R14, R13, R12, . . ., R0 CLK Serial Data Clock Input (Pin 7) Low-to-high transitions on Clock shift bits available at Din, while high-to-low transitions shift bits from Dout. The chip's 16-1/2-stage shift register is static, allowing clock rates down to dc in a continuous or intermittent mode. Four to eight clock cycles followed by five clock cycles are needed to reset the device; this is optional. Eight clock cycles are required to access the C register. Sixteen clock cycles are needed for the N register. Either 15 or 24 cycles can be used to access the R register (see Table 1 and Figures 13, 14, 15, and 16). For cascaded devices, see Figures 24 to 31. CLK typically switches near 50% of VDD and has a Schmitt-triggered input buffer. Slow CLK rise and fall times are allowed. See the last paragraph of Din for more information. NOTE To guarantee proper operation of the power-on reset (POR) circuit, the CLK pin must be held at the potential of either the VSS or VDD pin during power up. That is, the CLK input should not be floated or toggled while the VDD pin is ramping from 0 to at least 2.7 V. If control of the CLK pin is not practical during power up, the initialization sequence shown in Figure 13 must be used. ENB Active-Low Enable Input (Pin 6) This pin is used to activate the serial interface to allow the transfer of data to/from the device. When ENB is in an inactive high state, shifting is inhibited, Dout is forced to the high-impedance state, and the port is held in the initialized state. To transfer data to the device, ENB (which must start inactive high) is taken low, a serial transfer is made via Din and CLK, and ENB is taken back high. The low-to-high transition on ENB transfers data to the C, N, or R register depending on the data stream length per Table 1. NOTE Transitions on ENB must not be attempted while CLK is high. This puts the device out of synchronization with the microcontroller. Resynchronization occurs when ENB is high and CLK is low. This input is also Schmitt-triggered and switches near 50% of V DD , thereby minimizing the chance of loading erroneous data into the registers. See the last paragraph of Din for more information. Dout Three-State Serial Data Output (Pin 8) Data is transferred out of the 16-1/2-stage shift register through Dout on the high-to-low transition of CLK. This output is a No Connect, unless used in one of the manners discussed below. Dout could be fed back to an MCU/MPU to perform a wrap-around test of serial data. This could be part of a system check conducted at power up to test the integrity of the system's processor, PC board traces, solder joints, etc. The pin could be monitored at an in-line QA test during board manufacturing. Finally, Dout facilitates troubleshooting a system and permits cascading devices. REFERENCE PINS OSCin /OSCout Reference Oscillator Input/Output (Pins 1, 2) These pins form a reference oscillator when connected to terminals of an external parallel-resonant crystal. Frequency-setting capacitors of appropriate values as recommended by the crystal supplier are connected from each pin to ground (up to a maximum of 30 pF each, including stray capacitance). An external feedback resistor of 1.0 to 5.0 M is connected directly across the pins to ensure linear operation of the amplifier. The required connections for the components are shown in Figure 9. If desired, an external clock source can be ac coupled to OSC in . A 0.01 F coupling capacitor is used for measurement purposes and is the minimum size MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145170-2 4.2-107 MC145170-2 recommended for applications. An external feedback resistor of approximately 5 M is required across the OSC in and OSC out pins in the ac-coupled case (see Figure 8a or alternate circuit 8b). OSCout is an internal node on the device and should not be used to drive any loads (i.e., OSC out is unbuffered). However, the buffered REF out is available to drive external loads. The external signal level must be at least 1 V p-p; the maximum frequencies are given in the Loop Specifications table. These maximum frequencies apply for R Counter divide ratios as indicated in the table. For very small ratios, the maximum frequency is limited to the divide ratio times 2 MHz. (Reason: the phase/frequency detectors are limited to a maximum input frequency of 2 MHz.) If an external source is available which swings virtually rail-to-rail (VDD to VSS), then dc coupling can be used. In the dc-coupled case, no external feedback resistor is needed. OSCout must be a No Connect to avoid loading an internal node on the device, as noted above. For frequencies below 1 MHz, dc coupling must be used. The R counter is a static counter and may be operated down to dc. However, wave shaping by a CMOS buffer may be required to ensure fast rise and fall times into the OSCin pin. See Figure 22. Each rising edge on the OSCin pin causes the R counter to decrement by one. REFout Reference Frequency Output (Pin 3) This output is the buffered output of the crystal-generated reference frequency or externally provided reference source. This output may be enabled, disabled, or scaled via bits in the C register (see Figure 14). REF out can be used to drive a microprocessor clock input, thereby saving a crystal. Upon power up, the on-chip power-on-initialize circuit forces REF out to the OSC in divided-by-8 mode. REFout is capable of operation to 10 MHz; see the Loop Specifications table. Therefore, divide values for the reference divider are restricted to two or higher for OSCin frequencies above 10 MHz. If unused, the pin should be floated and should be disabled via the C register to minimize dynamic power consumption and electromagnetic interference (EMI). COUNTER OUTPUT PINS fR R Counter Output (Pin 9) This signal is the buffered output of the 15-stage R counter. fR can be enabled or disabled via the C register (patented). The output is disabled (static low logic level) upon power up. If unused, the output should be left disabled and unconnected to minimize interference with external circuitry. The fR signal can be used to verify the R counter's divide ratio. This ratio extends from 5 to 32,767 and is determined by the binary value loaded into the R register. Also, direct access to the phase detector via the OSCin pin is allowed by choosing a divide value of 1 (see Figure 15). The maximum frequency which the phase detectors operate is 2 MHz. Therefore, the frequency of fR must not exceed 2 MHz. When activated, the fR signal appears as normally low and pulses high. The pulse width is 4.5 cycles of the OSCin pin signal, except when a divide ratio of 1 is selected. When 1 is MC145170-2 4.2-108 selected, the OSCin signal is buffered and appears at the fR pin. fV N Counter Output (Pin 10) This signal is the buffered output of the 16-stage N counter. fV can be enabled or disabled via the C register (patented). The output is disabled (static low logic level) upon power up. If unused, the output should be left disabled and unconnected to minimize interference with external circuitry. The fV signal can be used to verify the N counter's divide ratio. This ratio extends from 40 to 65,535 and is determined by the binary value loaded into the N register. The maximum frequency which the phase detectors operate is 2 MHz. Therefore, the frequency of fV must not exceed 2 MHz. When activated, the fV signal appears as normally low and pulses high. LOOP PINS fin Frequency Input (Pin 4) This pin is a frequency input from the VCO. This pin feeds the on-chip amplifier which drives the N counter. This signal is normally sourced from an external voltage-controlled oscillator (VCO), and is ac-coupled into fin. A 100 pF coupling capacitor is used for measurement purposes and is the minimum size recommended for applications (see Figure 7). The frequency capability of this input is dependent on the supply voltage as listed in the Loop Specifications table. For small divide ratios, the maximum frequency is limited to the divide ratio times 2 MHz. (Reason: the phase/frequency detectors are limited to a maximum frequency of 2 MHz.) For signals which swing from at least the VIL to VIH levels listed in the Electrical Characteristics table, dc coupling may be used. Also, for low frequency signals (less than the minimum frequencies shown in the Loop Specifications table), dc coupling is a requirement. The N counter is a static counter and may be operated down to dc. However, wave shaping by a CMOS buffer may be required to ensure fast rise and fall times into the fin pin. See Figure 22. Each rising edge on the fin pin causes the N counter to decrement by 1. PDout Single-Ended Phase/Frequency Detector Output (Pin 13) This is a three-state output for use as a loop error signal when combined with an external low-pass filter. Through use of a Motorola patented technique, the detector's dead zone has been eliminated. Therefore, the phase/frequency detector is characterized by a linear transfer function. The operation of the phase/frequency detector is described below and is shown in Figure 17. POL bit (C7) in the C register = low (see Figure 14) Frequency of fV > fR or Phase of fV Leading fR: negative pulses from high impedance Frequency of fV < fR or Phase of fV Lagging fR: positive pulses from high impedance Frequency and Phase of fV = fR: essentially high-impedance state; voltage at pin determined by loop filter POL bit (C7) = high MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145170-2 Frequency of fV < fR or Phase of fV Lagging fR: R = essentially high, V = negative pulses Frequency and Phase of fV = fR: V and R remain essentially high, except for a small minimum time period when both pulse low in phase These outputs can be enabled, disabled, and interchanged via the C register (patented). Frequency of fV > fR or Phase of fV Leading fR: positive pulses from high impedance Frequency of fV < fR or Phase of fV Lagging fR: negative pulses from high impedance Frequency and Phase of fV = fR: essentially high-impedance state; voltage at pin determined by loop filter This output can be enabled, disabled, and inverted via the C register. If desired, PD out can be forced to the high-impedance state by utilization of the disable feature in the C register (patented). LD Lock Detector Output (Pin 11) This output is essentially at a high level with narrow low-going pulses when the loop is locked (fR and fV of the same phase and frequency). The output pulses low when fV and fR are out of phase or different frequencies (see Figure 17). This output can be enabled and disabled via the C register (patented). Upon power up, on-chip initialization circuitry disables LD to a static low logic level to prevent a false "lock" signal. If unused, LD should be disabled and left open. R and V Double-Ended Phase/Frequency Detector Outputs (Pins 14, 15) These outputs can be combined externally to generate a loop error signal. Through use of a Motorola patented technique, the detector's dead zone has been eliminated. Therefore, the phase/frequency detector is characterized by a linear t r ans fe r fu n c ti o n . T h e o p e ra ti on of the phase/frequency detector is described below and is shown in Figure 17. POL bit (C7) in the C register = low (see Figure 14) Frequency of fV > fR or Phase of fV Leading fR: V = negative pulses, R = essentially high Frequency of fV < fR or Phase of fV Lagging fR: V = essentially high, R = negative pulses Frequency and Phase of fV = fR: V and R remain essentially high, except for a small minimum time period when both pulse low in phase POL bit (C7) = high Frequency of fV > fR or Phase of fV Leading fR: R = negative pulses, V = essentially high POWER SUPPLY VDD Most Positive Supply Potential (Pin 16) This pin may range from 2.7 to 5.5 V with respect to VSS. For optimum performance, VDD should be bypassed to VSS using low-inductance capacitor(s) mounted very close to the device. Lead lengths on the capacitor(s) should be minimized. (The very fast switching speed of the device causes current spikes on the power leads.) VSS Most Negative Supply Potential (Pin 12) This pin is usually ground. For measurement purposes, the VSS pin is tied to a ground plane. Figure 13. Reset Sequence Power Up ENB CLK 1 2 3 1 2 3 4 5 One Zero 4 or More Clocks Din Don't Cares NOTE: Zeroes Don't Cares This initialization sequence is usually not necessary because the on-chip power-on reset circuit performs the initialization function. However, this initialization sequence must be used immediately after power up if control of the CLK pin is not possible. That is, if CLK (Pin 7) toggles or floats upon power up, use the above sequence to reset the device. Also, use this sequence if power is momentarily interrupted such that the supply voltage to the device is reduced to below 2.7 V, but not down to at least 1 V (for example, the supply drops down to 2 V). This is necessary because the on-chip power-on reset is only activated when the supply ramps up from a voltage below approximately 1.0 V. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145170-2 4.2-109 MC145170-2 Figure 14. C Register Access and Format (8 Clock Cycles are Used) ENB 1 CLK 2 3 4 5 6 7 MSB C7 Din 8 * LSB C6 C5 C4 C3 C2 C1 C0 * At this point, the new byte is transferred to the C register and stored. No other registers are affected. C7 -- POL: Selects the output polarity of the phase/frequency detectors. When set high, this bit inverts PDout and interchanges the R function with V as depicted in Figure 17. Also see the phase detector output pin descriptions for more information. This bit is cleared low at power up. C6 -- PDA/B: Selects which phase/frequency detector is to be used. When set high, enables the output of phase/frequency detector A (PDout) and disables phase/frequency detector B by forcing R and V to the static high state. When cleared low, phase/frequency detector B is enabled (R and V) and phase/frequency detector A is disabled with PDout forced to the high-impedance state. This bit is cleared low at power up. C5 -- LDE: Enables the lock detector output when set high. When the bit is cleared low, the LD output is forced to a static low level. This bit is cleared low at power up. C4 - C2, OSC2 - OSC0: Reference output controls which determine the REFout characteristics as shown below. Upon power up, the bits are initialized such that OSCin /8 is selected. MC145170-2 4.2-110 C4 C3 C2 0 0 0 dc (Static Low) 0 0 1 OSCin 0 1 0 OSCin /2 0 1 1 OSCin /4 1 0 0 OSCin /8 (POR Default) 1 0 1 OSCin /16 1 1 0 OSCin /8 1 1 1 OSCin /16 REFout Frequency C1 -- fVE: Enables the fV output when set high. When cleared low, the fV output is forced to a static low level. The bit is cleared low upon power up. C0 -- fRE: Enables the fR output when set high. When cleared low, the fR output is forced to a static low level. The bit is cleared low upon power up. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ENB 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 LSB CC CC CC C C CC C C CC C C C C C C C C C C C C CC C C CC C C C C C C C C C C C C C C CC C C CC C C CC C C C C C C C C C C C C C C C C CC MSB 24 * 1 CLK Din X X X X X X X X X R14 Don't Care Bits R13 R12 R11 R10 See Below R9 R8 R7 R6 See Below R5 R4 R3 See Below R2 R1 R0 See Below ENB 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 LSB MSB Din R14 R12 R11 R10 0 0 0 0 0 0 0 0 . . . 7 7 0 0 0 0 0 0 0 0 . . . F F 0 0 0 0 0 0 0 0 . . . F F 0 1 2 3 4 5 6 7 . . . E F Hexadecimal Value R9 R8 R7 R6 R5 R4 R3 R2 R1 R0 Not Allowed R Counter = / 1 (Direct Access to Reference Side of Phase/Frequency Detector) Not Allowed Not Allowed Not Allowed R Counter = / 5 R Counter = / 6 R Counter = / 7 R Counter = / 32,766 R Counter = / 32,767 Decimal Equivalent * At this point, the new data is transferred to the R register and stored. No other registers are affected. Figure 15. MC145170-2 4.2-111 Octal Value R13 MC145170-2 C C C C C C C C C C C C CCC C C C CCC C C C CCC C C C C C C C C C C C C C C C C C C CCC C CC CC C C C C CCC C C C C C C C C C CCC CLK * MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Figure 15. R Register Access and Formats (Either 24 or 15 Clock Cycles Can Be Used) MC145170-2 Figure 16. N Register Access and Format (16 Clock Cycles Are Used) ENB CLK 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 MSB N15 Din 16 * LSB N14 N13 N12 N11 N10 N9 N8 N7 N6 N5 N4 0 0 0 0 0 0 0 0 0 0 0 0 0 1 2 3 Not Allowed Not Allowed Not Allowed Not Allowed 0 0 0 0 0 0 0 0 0 0 0 0 0 0 2 2 2 2 2 2 2 5 6 7 8 9 A B Not Allowed Not Allowed Not Allowed N Counter = / 40 N Counter = / 41 N Counter = / 42 N Counter = / 43 F F F F F F E F N Counter = / 65,534 N Counter = / 65,535 N3 N2 N1 N0 Decimal Equivalent Hexadecimal Value * At this point, the two new bytes are transferred to the N register and stored. No other registers are affected. In addition, the N and R counters are jam-loaded and begin counting down together. Figure 17. Phase/Frequency Detectors and Lock Detector Output Waveforms fR Reference OSCin / R VH VL fV Feedback (fin / N) PDout VH VL * VH High Impedance R VL VH VL V VH VL VH LD VL VH = High voltage level VL = Low voltage level *At this point, when both fR and fV are in phase, both the sinking and sourcing output FETs are turned on for a very short interval. NOTE: The PDout generates error pulses during out-of-lock conditions. When locked in phase and frequency, the output is high impedance and the voltage at that pin is determined by the low-pass filter capacitor. PDout, R, and V are shown with the polarity bit (POL) = low; see Figure 14 for POL. MC145170-2 4.2-112 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145170-2 DESIGN CONSIDERATIONS CRYSTAL OSCILLATOR CONSIDERATIONS The following options may be considered to provide a reference frequency to Motorola's CMOS frequency synthesizers. Use of a Hybrid Crystal Oscillator Commercially available temperature-compensated crystal oscillators (TCXOs) or crystal-controlled data clock oscillators provide very stable reference frequencies. An oscillator capable of CMOS logic levels at the output may be direct or dc coupled to OSCin. If the oscillator does not have CMOS logic levels on the outputs, capacitive or ac coupling to OSCin may be used (see Figures 8a and 8b). F or addit ion a l i n fo rm a ti o n a b o u t T C XOs , vi s it motorola.com on the world wide web. Use of the On-Chip Oscillator Circuitry The on-chip amplifier (a digital inverter) along with an appropriate crystal may be used to provide a reference source frequency. A fundamental mode crystal, parallel resonant at the desired operating frequency, should be connected as shown in Figure 18. The crystal should be specified for a loading capacitance (CL) which does not exceed 20 pF when used at the highest operating frequencies listed in the Loop Specifications table. Larger CL values are possible for lower frequencies. Assuming R1 = 0 , the shunt load capacitance (CL) presented across the crystal can be estimated to be: C To verify that the maximum dc supply voltage does not cause the crystal to be overdriven, monitor the output frequency at the REFout pin (OSCout is not used because loading impacts the oscillator). The frequency should increase very slightly as the dc supply voltage is increased. An overdriven crystal decreases in frequency or becomes unstable with an increase in supply voltage. The operating supply voltage must be reduced or R1 must be increased in value if the overdriven condition exists. The user should note that the oscillator start-up time is proportional to the value of R1. Through the process of supplying crystals for use with CMOS inverters, many crystal manufacturers have developed expertise in CMOS oscillator design with crystals. Discussions with such manufacturers can prove very helpful (see Table 2). Figure 18. Pierce Crystal Oscillator Circuit Frequency Synthesizer OSCin R1* C1 5.0 to 10 pF C1 C2 + CCin)CCout ) Ca ) Cstray ) C1 L ) C2 in OSCout Rf out C2 * May be needed in certain cases. See text. where Cin = Cout = Ca = C1 and C2 = Cstray = 5.0 pF (see Figure 19) 6.0 pF (see Figure 19) 1.0 pF (see Figure 19) external capacitors (see Figure 18) the total equivalent external circuit stray capacitance appearing across the crystal terminals The oscillator can be "trimmed" on-frequency by making a portion or all of C1 variable. The crystal and associated components must be located as close as possible to the OSCin and OSCout pins to minimize distortion, stray capacitance, stray inductance, and startup stabilization time. Circuit stray capacitance can also be handled by adding the appropriate stray value to the values for Cin and Cout. For this approach, the term Cstray becomes 0 in the above expression for CL. A good design practice is to pick a small value for C1, such as 5 to 10 pF. Next, C2 is calculated. C1 < C2 results in a more robust circuit for start-up and is more tolerant of crystal parameter variations. Power is dissipated in the effective series resistance of the crystal, Re, in Figure 20. The maximum drive level specified by the crystal manufacturer represents the maximum stress that the crystal can withstand without damage or excessive shift in operating frequency. R1 in Figure 18 limits the drive level. The use of R1 is not necessary in most cases. Figure 19. Parasitic Capacitances of the Amplifier and Cstray Ca OSCin OSCout Cin Cout Cstray Figure 20. Equivalent Crystal Networks 1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 2 CS LS RS 1 2 CO 1 NOTE: Re Xe 2 Values are supplied by crystal manufacturer (parallel resonant crystal). MC145170-2 4.2-113 MC145170-2 RECOMMENDED READING Technical Note TN-24, Statek Corp. Technical Note TN-7, Statek Corp. E. Hafner, "The Piezoelectric Crystal Unit-Definitions and Method of Measurement", Proc. IEEE, Vol. 57, No. 2, Feb. 1969. D. Kemper, L. Rosine, "Quartz Crystals for Frequency Control", Electro-Technology, June 1969. P. J. Ottowitz, "A Guide to Crystal Selection", Electronic Design, May 1966. D. Babin, "Designing Crystal Oscillators", Machine Design, March 7, 1985. D. Babin, "Guidelines for Crystal Oscillator Design", Machine Design, April 25, 1985. See web site mot-sps.com for MC145170-2 control software. Select in order, Products, Wireless Semiconductor, Download, then PLL Demo Software. Choose PLLGEN.EXE. Table 2. Partial List of Crystal Manufacturers CTS Corp. United States Crystal Corp. Crystek Crystal Statek Corp. Fox Electronics NOTE: MC145170-2 4.2-114 Motorola cannot recommend one supplier over another and in no way suggests that this is a complete listing of crystal manufacturers. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145170-2 PHASE-LOCKED LOOP -- LOW PASS FILTER DESIGN (A) PDout VCO n = R1 C (B) PDout VCO = Nn 2KKVCO F(s) = 1 R1sC + 1 n = R1 K KVCO NR1C K KVCO NC(R1 + R2) R2 = 0.5 n C N R2C + KKVCO F(s) = R2sC + 1 (R1 + R2)sC + 1 n = K KVCO NCR1 R2 (C) R R1 C - V A VCO + R1 R2 MC33077 or equivalent (Note 3) = nR2C 2 Assuming Gain A Is Very Large, Then: C F(s) = R2sC + 1 R1sC NOTES: 8 For (C), R1 is frequently split into two series resistors; each resistor is equal to R1 divided by 2. A capacitor CC is then placed from the midpoint to ground to further filter the error pulses. The value of CC should be such that the corner frequency of this network does not significantly affect n. 9 The R and V outputs swing rail-to-rail. Therefore, the user should be careful not to exceed the common mode input range of the op amp. 10 For the latest information on MC33077 or equivalent, see the Motorola Analog IC web site at http://www.mot-sps.com/analog. DEFINITIONS: N = Total Division Ratio in Feedback Loop K (Phase Detector Gain) = VDD / 4 volts per radian for PDout K (Phase Detector Gain) = VDD / 2 volts per radian for V and R KVCO (VCO Gain) = 2fVCO VVCO For a nominal design starting point, the user might consider a damping factor 0.7 and a natural loop frequency n (2fR/50) where fR is the frequency at the phase detector input. Larger n values result in faster loop lock times and, for similar sideband filtering, higher fR-related VCO sidebands. RECOMMENDED READING: Gardner, Floyd M., Phaselock Techniques (second edition). New York, Wiley-Interscience, 1979. Manassewitsch, Vadim, Frequency Synthesizers: Theory and Design (second edition). New York, Wiley-Interscience, 1980. Blanchard, Alain, Phase-Locked Loops: Application to Coherent Receiver Design. New York, Wiley-Interscience, 1976. Egan, William F., Frequency Synthesis by Phase Lock. New York, Wiley-Interscience, 1981. Rohde, Ulrich L., Digital PLL Frequency Synthesizers Theory and Design. Englewood Cliffs, NJ, Prentice-Hall, 1983. Berlin, Howard M., Design of Phase-Locked Loop Circuits, with Experiments. Indianapolis, Howard W. Sams and Co., 1978. Kinley, Harold, The PLL Synthesizer Cookbook. Blue Ridge Summit, PA, Tab Books, 1980. Seidman, Arthur H., Integrated Circuits Applications Handbook, Chapter 17, pp. 538-586. New York, John Wiley & Sons. Fadrhons, Jan, "Design and Analyze PLLs on a Programmable Calculator," EDN. March 5, 1980. AN535, Phase-Locked Loop Design Fundamentals, Motorola Semiconductor Products, Inc., 1970. AR254, Phase-Locked Loop Design Articles, Motorola Semiconductor Products, Inc., Reprinted with permission from Electronic Design, 1987. AN1207, The MC145170 in Basic HF and VHF Oscillators, Motorola Semiconductor Products, Inc., 1992. AN1671, MC145170 PSpice Modeling Kit, Motorola Semiconductor Products, Inc., 1998. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145170-2 4.2-115 MC145170-2 Figure 21. Example Application VHF Output Buffer VHF VCO Low-pass Filter V+ 2 3 V+ 4 5 6 7 MCU 8 Optional Threshold Detector Optional (Note 5) OSCin VDD 16 OSCout V 15 REFout R 14 fin Din MC145170-2 1 PDout VSS ENB LD CLK fV Dout fR Optional Loop Error Signals (Note 1) 13 12 11 10 9 Integrator (Note 4) NOTES: 1 The R and V outputs are fed to an external combiner/loop filter. See the Phase-Locked Loop -- Low-Pass Filter Design page for additional information. The R and V outputs swing rail-to-rail. Therefore, the user should be careful not to exceed the common mode input range of the op amp used in the combiner/loop filter. 2 For optimum performance, bypass the VDD pin to VSS (GND) with one or more low-inductance capacitors. 3 The R counter is programmed for a divide value = OSCin/fR. Typically, fR is the tuning resolution required for the VCO. Also, the VCO frequency divided by fR = N, where N is the divide value of the N counter. 4 May be an R-C low-pass filter. 5 May be a bipolar transistor. MC145170-2 4.2-116 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145170-2 Figure 22. Low Frequency Operation Using dc Coupling V+ VDD 14 A 1 2 C MC74HC14A B 3 No Connect MC145170-2 4 7 OSCout OSCin D fin VSS NOTE: The signals at Points A and B may be low-frequency sinusoidal or square waves with slow edge rates or noisy signal edges. At Points C and D, the signals are cleaned up, have sharp edge rates, and rail-to-rail signal swings. With signals as described at Points C and D, the MC145170-2 is guaranteed to operate down to a frequency as low as dc. Refer to the MC74HC14A data sheet for input switching levels and hysteresis voltage range. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145170-2 4.2-117 MC145170-2 Figure 23. Input Impedance at fin -- Series Format (R + jX) (5.0 MHz to 185 MHz) fin (Pin 4) SOG Package 1 2 3 4 Marker Frequency (MHz) Resistance () Reactance () Capacitance (pF) 1 2 3 4 5 100 150 185 2390 39.2 25.8 42.6 - 5900 - 347 - 237 - 180 5.39 4.58 4.48 4.79 Figure 24. Cascading Two MC145170-2 Devices Device #1 MC145170-2 Din CLK ENB Device #2 MC145170-2 Dout Din CLK ENB Dout 33 k NOTE 1 CMOS MCU Optional NOTES: 1 The 33 k resistor is needed to prevent the Din pin from floating. (The Dout pin is a three-state output.) 2 See related Figures 25, 26, and 27. MC145170-2 4.2-118 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ENB 1 CLK 2 7 8 9 10 15 16 17 18 23 24 25 26 31 32 33 34 39 40 NOTE C C CC C C C C CC C CC C C C C C CC CC C C C C C C CC CC C C CC C C CC CC C C CC C C CC CC CC C C CC Figure 25. D in X X X X X X C7 C0 C6 X X X C7 C6 C0 C Register Bits of Device #1 in Figure 24 C Register Bits of Device #2 in Figure 24 NOTE: At this point, the new data is transferred to the C registers of both devices and stored. No other registers are affected. MC145170-2 Figure 26. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Figure 25. Accessing the C Registers of Two Cascaded MC145170-2 Devices Figure 26. Accessing the R Registers of Two Cascaded MC145170-2 Devices ENB 1 2 8 9 10 NOTE 25 26 27 30 31 39 40 41 42 44 45 48 49 50 55 56 C C CC C C CC C C C C CC CC CC C C C CC C C C CC C C C CC C C C CC CC C C C C CC CC C C C C CC CC C C CC CLK D in X X X X R14 R13 R9 R1 R0 X R14 MC145170-2 4.2-119 R Register Bits of Device #2 in Figure 24 NOTE: At this point, the new data is transferred to the R registers of both devices and stored. No other registers are affected. R11 R7 R6 R Register Bits of Device #1 in Figure 24 R0 Figure 27. MC145170-2 4.2-120 Figure 27. Accessing the N Registers of Two Cascaded MC145170-2 Devices ENB 8 9 10 15 16 17 23 24 25 31 32 33 39 40 41 47 48 CCC CCC C C C CCC C C C C C C CCC CCC CCC C C C CCC CCC C C C C C C C C C C C C CCC C C C C C C C C C CCC CCC C C C CCC CCC CCC C C C C C C C C C CCC MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 2 D in X X X X X N15 N8 N7 N0 N15 N Register Bits of Device #2 in Figure 24 NOTE: At this point, the new data is transferred to the N registers of both devices and stored. No other registers are affected. N8 N7 N Register Bits of Device #1 in Figure 24 N0 MC145170-2 NOTE 1 CLK MC145170-2 Figure 28. Cascading Two Different Device Types V+ VPD Device #1 MC145170-2 Din CLK ENB VDD VDD VCC Dout Din Device #2 Note 2 CLK ENB VPD Output A (Dout) 33 k Note 1 CMOS MCU Optional NOTES: 1 The 33 k resistor is needed to prevent the Din pin from floating. (The Dout pin is a three-state output.) 2 This PLL Frequency Synthesizer may be a MC145190, MC145191, MC145192, MC145200, or MC145201. 3 See related Figures 29, 30, and 31. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145170-2 4.2-121 MC145170-2 4.2-122 Figure 29. Accessing the C Registers of Two Different Device Types ENB 1 2 7 8 9 10 15 16 17 18 23 24 25 26 31 32 33 34 39 40 NOTE Figure 29. CCC CCC C C C CCC CCC CCC C C C CCC CCC C C C C C C CCC C C C C C C CCC C C C C C C C C C CCC CCC CCC C C C C C C C CC CC C C C C C C C CCC CLK D in X X X X X X C7 C6 C0 X X X C7 C6 C0 C Register Bits of Device #1 in Figure 28 C Register Bits of Device #2 in Figure 28 NOTE: At this point, the new data is transferred to the C registers of both devices and stored. No other registers are affected. MC145170-2 ENB 1 CLK 2 16 17 18 20 21 22 30 31 32 39 40 41 42 43 46 47 48 55 56 NOTE C C C CCC CCC CCC C C C C C C C C C CCC C C C CCC CCC C C C C C C C C C C CC CC C CCC C C C CCC C C C CCC CCC C C C C C C C C C CCC C C C C C C C C C CCC Figure 30. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Figure 30. Accessing the A and R Registers of Two Different Device Types D in X X A23 A22 A19 A18 A Register Bits of Device #2 in Figure 28 A9 A8 A0 X R14 R13 R9 R8 R Register Bits of Device #1 in Figure 28 NOTE: At this point, the new data is transferred to the A register of Device #2 and R register of Device #1 and stored. No other registers are affected. R0 ENB 8 9 10 15 16 17 23 24 25 31 32 33 39 40 41 47 48 NOTE CC CC C C CC C C C C CC CC CC C C CC CC C C C C C C CC C C CC CC CC C C CC CC CC C C C C C C CC 2 D in X X X X X R15 R8 R7 R Register Bits of Device #2 in Figure 28 R0 N15 N8 N7 N Register Bits of Device #1 in Figure 28 NOTE: At this point, the new data is transferred to the R register of Device #2 and N register of Device #1 and stored. No other registers are affected. N0 MC145170-2 1 CLK Figure 31. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Figure 31. Accessing the R and N Registers of Two Different Device Types MC145170-2 4.2-123 MC145193 1.1 GHz PLL Frequency Synthesizer The MC145193 is recommended for new designs and offers reduced power consumption. The counters are programmed via a synchronous serial port which is SPI compatible. The serial port is byte-oriented to facilitate control via an MCU. Due to the innovative BitGrabber Plus registers, the MC145193 may be cascaded with other peripherals featuring BitGrabber Plus without requiring leading dummy bits or address bits in the serial data stream. In addition, BitGrabber Plus peripherals may be cascaded with existing BitGrabber peripherals. The device features a single-ended current source/sink phase detector A output and a double-ended phase detector B output. Both phase detectors have linear transfer functions (no dead zones). The maximum current of the single-ended phase detector output is determined by an external resistor tied from the Rx pin to ground. This current can be varied via the serial port. Slew-rate control is provided by a special driver designed for the REFout pin. This minimizes interference caused by REFout. This part includes a differential RF input that may be operated in a single-ended mode. Also featured are on-board support of an external crystal and a programmable reference output. The R, A, and N counters are fully programmable. The C register (configuration register) allows the part to be configured to meet various applications. A patented feature allows the C register to shut off unused outputs, thereby minimizing system noise and interference. In order to have consistent lock times and prevent erroneous data from being loaded into the counters, on-board circuitry synchronizes the update of the A register if the A or N counters are loading. Similarly, an update of the R register is synchronized if the R counter is loading. The double-buffered R register allows new divide ratios to be presented to the three counters (R, A, and N) simultaneously. * Maximum Operating Frequency: 1100 MHz @ - 10 dBm * * * * * * * * * * * Operating Supply Current: 3 mA Nominal at 3.0 V Operating Supply Voltage Range (VDD, VCC, VPD Pins): 2.7 to 5.5 V Current Source/Sink Phase Detector Output: 1.7 mA @ 5.0 V or 1.0 mA @ 3.0 V Gain of Current Source/Sink Phase/Frequency Detector Controllable via Serial Port R Counter Division Range: 1 and 5 to 8191 Dual-Modulus Capability Provides Total Division up to 262,143 High-Speed Serial Interface: 4 Mbps Output A Pin, When Configured as Data Out, Permits Cascading of Devices Two General-Purpose Digital Outputs: Output A: Totem-Pole (Push-Pull) with Four Output Modes Output B: Open-Drain Patented Power-Saving Standby Feature with Orderly Recovery for Minimizing Lock Times, Standby Current: 30 A See App Note AN1253/D for Low-Pass Filter Design, and AN1277/D for Offset Reference PLLs for Fine Resolution or Fast Hopping MC145193 4.2-124 PLL FREQUENCY SYNTHESIZER SEMICONDUCTOR TECHNICAL DATA 20 1 F SUFFIX PLASTIC PACKAGE CASE 751J (SO-20) PIN CONNECTIONS REFout LD 1 2 20 REFin 19 Din R V 3 18 CLK 4 17 ENB VPD PDout 5 16 Output A 6 15 Output B Gnd 7 Rx 8 14 VDD 13 Test 2 Test 1 9 12 VCC 11 fin fin 10 (Top View) EVALUATION KIT The MC145193EVK, which contains hardware and software, is available. ORDERING INFORMATION Device Operating Temperature Range Package MC145193F TA = -40 to 85C SO-20 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145193 BLOCK DIAGRAM Data Out REFin REFout 20 OSC or 4-Stage Divider (Configurable) 1 fR 13-Stage R Counter Port fV Din 2 Lock Detector And Control 18 8 Shift Register And Control Logic 19 BitGrabber C Register 8 Bits 24 Standby Logic ENB 16 Output A 13 3 Double-buffered BitGrabber R Register 16 Bits CLK Select Logic Phase/Frequency Detector A And Control 6 LD Rx PDout POR 17 3 R 4 V Phase/Frequency Detector B And Control 2 BitGrabber A Register 24 Bits Internal Control fin fin 6 4 12 6-Stage A Counter 12-Stage N Counter 64/65 Prescaler Modulus Control Logic 15 Output B (Open- Drain Output) 11 10 Input AMP Supply Connections: Pin 12 = VCC (V+ To Input AMP and 64/65 Prescaler) Pin 5 = VPD (V+ To Phase/Frequency Detectors A and B) Pin 14 = VDD (V+ To Balance Of Circuit) Pin 7 = Gnd (Common Ground) 13 9 Test 2 Test 1 This device contains 7,278 active transistors. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145193 4.2-125 MC145193 MAXIMUM RATINGS* (Voltages Referenced to Gnd, unless otherwise stated) Parameter Symbol Value Unit VCC, VDD -0.5 to 6.0 V VPD VDD - 0.5 to 6.0 V DC Input Voltage Vin -0.5 to VDD + 0.5 V DC Output Voltage (except Output B, PDout, R, V) Vout -0.5 to VDD + 0.5 V DC Output Voltage (Output B, PDout, R, V) Vout -0.5 to VPD + 0.5 V Iin, IPD 10 mA DC Output Current, per Pin Iout 20 mA DC Supply Current, VDD and Gnd Pins IDD 30 mA Power Dissipation, per Package PD 300 mW Storage Temperature Tstg -65 to 150 C TL 260 C DC Supply Voltage (Pins 12 and 14) DC Supply Voltage (Pin 5) DC Input Current, per Pin (Includes VPD) Lead Temperature, 1 mm from Case for 10 Seconds This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Electrical Characteristics tables or Pin Descriptions section. 2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) 2000 V and Machine Model (MM) 200 V. Additional ESD data available upon request. ELECTRICAL CHARACTERISTICS (VDD = VCC = 2.7 to 5.5 V, Voltages Referenced to Gnd, unless otherwise stated; VPD = 2.7 to 5.5 V, TA = -40 to 85C) Symbol Guaranteed Limit Unit Maximum Low-Level Input Voltage (Din, CLK, ENB) VIL 0.3 x VDD V Minimum High-Level Input Voltage (Din, CLK, ENB) VIH 0.7 x VDD V Test Condition Parameter Minimum Hysteresis Voltage (CLK, ENB) VDD = 2.7 V VDD = 4.5 V VHys 100 250 mV Maximum Low-Level Output Voltage (REFout, Output A) Iout = 20 A, Device in Reference Mode VOL 0.1 V Minimum High-Level Output Voltage (REFout, Output A) Iout = - 20 A, Device in Reference Mode VOH VDD - 0.1 V Minimum Low-Level Output Current (REFout, LD) Vout = 0.3 V IOL 0.36 mA Minimum Low-Level Output Current (R, V) Vout = 0.3 V IOL 0.36 mA Minimum Low-Level Output Current (Output A) Vout = 0.4 V VDD = 4.5 V IOL 1.0 mA Minimum Low-Level Output Current (Output B) Vout = 0.4 V IOL 1.0 mA Minimum High-Level Output Current (REFout, LD) Vout = VDD - 0.3 V IOH -0.36 mA Minimum High-Level Output Current (R, V) Vout = VPD - 0.3 V IOH -0.36 mA Minimum High-Level Output Current (Output A Only) Vout = VDD - 0.4 V VDD = 4.5 V IOH -0.6 mA (continued) MC145193 4.2-126 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145193 ELECTRICAL CHARACTERISTICS (continued) Test Condition Parameter Symbol Guaranteed Limit Unit Maximum Input Leakage Current (Din, CLK, ENB, REFin) Vin = VDD or Gnd, Device in XTAL Mode Iin 1.0 A Maximum Input Current (REFin) Vin = VDD or Gnd, Device in Reference Mode Iin 100 A Maximum Output Leakage Current (PDout) Vout = VPD or Gnd, Output in Floating State IOZ 130 nA 1 A (Output B) Vout = VPD or Gnd, Output in High-Impedance State Maximum Standby Supply Current (VDD + VPD Pins) Vin = VDD or Gnd; Outputs Open; Device in Standby Mode, Shut-Down Crystal Mode or REFout-Static-Low Reference Mode; Output B Controlling VCC per Figure 21 ISTBY 30 A Maximum Phase Detector Quiescent Current (VPD Pin) Bit C6 = High Which Selects Phase Detector A, PDout = Open, PDout = Static State, Bit C4 = Low Which is not Standby, IRx = 170 A, VPD = 5.5 V IPD 750 A Bit C6 = Low Which Selects Phase Detector B, R and V = Open, R and V = Static Low or High, Bit C4 = Low Which is not Standby Total Operating Supply Current (VDD + VPD + VCC Pins) NOTE: fin = 2.0 GHz; REFin = 13 MHz @ 1 Vpp; Output A = Inactive and No Connect; VDD = VCC, REFout, V, R, PDout, LD = No Connect; Din, ENB, CLK = VDD or Gnd, Phase Detector B Selected (Bit C6 = Low) 30 IT [Note] mA The nominal value is: 3 mA at VDD = VCC = VPD = 3.0 V. This is not a guaranteed limit. ANALOG CHARACTERISTICS -- CURRENT SOURCE/SINK OUTPUT -- PDout (Iout 1 mA @ VDD = 2.7 V and Iout 1.7mA @ VDD 4.5 V, VDD = VCC = 2.7 to 5.5 V, Voltages Referenced to Gnd) Test Condition Parameter Maximum Source Current Variation (Part-to-Part) Maximum Sink-vs-Source Mismatch [Note 3] Vout = 0.5 x VPD Vout = 0.5 x VPD Output Voltage Range [Note 3] VPD Guaranteed Limit Unit 2.7 15 % 4.5 15 5.5 15 2.7 11 4.5 11 % 5.5 11 Iout Variation 15% 2.7 0.5 to 2.2 Iout Variation 20% 4.5 0.5 to 3.7 Iout Variation 22% 5.5 0.5 to 4.7 V NOTES: 1. Percentages calculated using the following formula: (Maximum Value - Minimum Value)/Maximum Value. 2. See Rx Pin Description for external resistor values. 3. This parameter is guaranteed for a given temperature within -40 to 85C. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145193 4.2-127 MC145193 AC INTERFACE CHARACTERISTICS (VDD = VCC = 2.7 to 5.5 V, TA = - 40 to + 85C, CL = 25 pF, Input tr = tf = 10 ns; VPD = 2.7 to 5.5 V) Figure No. Parameter Serial Data Clock Frequency (Note: Refer to Clock tw below) Symbol Guaranteed Limit Unit 1 fclk dc to 4.0 MHz Maximum Propagation Delay, CLK to Output A (Selected as Data Out) 1, 5 tPLH, tPHL 100 ns Maximum Propagation Delay, ENB to Output A (Selected as Port) 2, 5 tPLH, tPHL 150 ns Maximum Propagation Delay, ENB to Output B 2, 6 tPZL, tPLZ 150 ns 1, 5, 6 tTLH, tTHL 50 ns Cin 10 pF Maximum Output Transition Time, Output A and Output B; tTHLonly, on Output B Maximum Input Capacitance - Din, ENB, CLK TIMING REQUIREMENTS (VDD = VCC = 2.7 to 5.5 V, TA = - 40 to + 85C, Input tr = tf = 10 ns, unless otherwise indicated) Figure No. Symbol Guaranteed Limit Unit Minimum Setup and Hold Times, Din vs CLK 3 tsu, th 50 ns Minimum Setup, Hold and Recovery Times, ENB vs CLK 4 tsu, th, trec 100 ns Minimum Pulse Width, ENB 4 tw [Note] cycles Minimum Pulse Width, CLK 1 tw 125 ns Maximum Input Rise and Fall Times, CLK 1 tr, tf 100 s Parameter NOTE: The minimum limit is 3 REFin cycles or 195 fin cycles, whichever is greater. MC145193 4.2-128 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145193 SWITCHING WAVEFORMS Figure 1. tf Figure 2. tr VDD 90% CLK 50% 10% ENB Gnd Gnd tw tPLH tw Output A 1/fclk tPLH Output A (Data Out) VDD 50% 50% tPHL tPLZ 90% 50% 10% Output B tTLH tPHL tPZL 50% 10% tTHL Figure 3. Figure 4. tw tw VDD Valid ENB 50% VDD Din 50% Gnd tsu th trec VDD th VDD CLK 50% CLK Gnd tsu Gnd 50% First CLK Last CLK Figure 5. Gnd Figure 6. +VPD Test Point Test Point 7.5 k Device Under Test CL * * Includes all probe and fixture capacitance. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Device Under Test CL * * Includes all probe and fixture capacitance. MC145193 4.2-129 MC145193 LOOP SPECIFICATIONS (VDD = VCC = 2.7 to 5.5 V unless otherwise indicated, TA = -40 to 85C) Parameter Test Condition Guaranteed Operating Range Fig. No. Symbol Min Max Unit Input Sensitivity Range, fin 100 MHz fin 1100 MHz 7 Pin - 10 4 dBm* Input Frequency, REFin Externally Driven in Reference Mode Vin 400 mVpp 8 fref 1.5 1.5 20 30 MHz Crystal Frequency, Crystal Mode C1 30 pF, C2 30 pF, Includes Stray Capacitance 9 fXTAL 2 15 MHz Output Frequency, REFout CL = 20 pF, Vout 1 Vpp 10, 12 fout dc 10 MHz f dc 2 MHz 40 18 14 120 60 50 ns tTLH, tTHL -- 80 ns Cin -- 7 pF 2.7 VDD < 4.5 V 4.5 VDD 5.5 V Operating Frequency of the Phase Detectors Output Pulse Width (R, V, and LD) Output Transition Times (LD, V, and R) fR in Phase with fV, CL = 20 pF, R and V active for LD measurement, ** VPD = 2.7 to 5.5 V VDD = 2.7 V VDD = 4.5 V VDD = 5.5 V 11, 12 CL = 20 pF, VPD = 2.7 V, VDD = VCC = 2.7 V 11, 12 tw Input Capacitance, REFin * Power level at the input to the dc block. ** When PDout is active, LD minimum pulse width is approximately 5 ns. Figure 7. Test Circuit Sine Wave Generator DC Block 50 PAD fin 50 fin Figure 8. Test Circuit -- Reference Mode Test Point Output A (fV) Device Under Test 0.01 F Sine Wave Generator REFin 50 Device Under Test Vin VCC Gnd VDD VCC V+ Test Point Output A (fR) Test Point REFout Gnd VDD V+ NOTE: Alternately, the 50 pad may be a T network. Figure 9. Test Circuit -- Crystal Mode REFin C1 C2 1 / f REFout Test Point Output A Device Under Test Figure 10. Switching Waveform REFout (fR) 50% REFout VCC Gnd VDD V+ Figure 12. Test Circuit Test Point Device Under Test Figure 11. Switching Waveform tw Output MC145193 4.2-130 50% 90% 10% tTHL tTLH CL * * Includes all probe and fixture capacitance. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145193 fin (PIN 11) SOG PACKAGE 4 4 1 3 1 3 2 2 3V 5V Figure 13. Normalized Input Impedance at fin -- Series Format (R + jx) Table 1. Input Impedence at fin -- Series Format (R + jx), VCC = 3 V Marker Frequency (GHz) Resistance () Reactance () Capacitance/ Inductance 1 0.5 11.4 -168 1.9 pF 2 1 12.4 -59.4 2.68 pF Table 2. Input Impedence at fin -- Series Format (R + jx), VCC = 5 V Marker Frequency (GHz) Resistance () Reactance () Capacitance/ Inductance 1 0.5 11.8 -175 1.82 pF 2 1 11.5 -64.4 2.47 pF MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145193 4.2-131 MC145193 PIN DESCRIPTIONS CLK Serial Data Clock Input (Pin 18) DIGITAL INTERFACE PINS Din Serial Data Input (Pin 19) The bit stream begins with the most significant bit (MSB) and is shifted in on the low-to-high transition of CLK. The bit pattern is 1 byte (8 bits) long to access the C or configuration register, 2 bytes (16 bits) to access the first buffer of the R register, or 3 bytes (24 bits) to access the A register (see Table 3). The values in the C, R, and A registers do not change during shifting because the transfer of data to the registers is controlled by ENB. CAUTION The value programmed for the N counter must be greater than or equal to the value of the A counter. The 13 least significant bits (LSBs) of the R register are double-buffered. As indicated above, data is latched into the first buffer on a 16-bit transfer. (The 3 MSBs are not double-buffered and have an immediate effect after a 16-bit transfer.) The second buffer of the R register contains the 13 bits for the R counter. This second buffer is loaded with the contents of the first buffer when the A register is loaded (a 24-bit transfer). This allows presenting new values to the R, A, and N counters simultaneously. If this is not required, then the 16-bit transfer may be followed by pulsing ENB low with no signal on the CLK pin. This is an alternate method of transferring data to the second buffer of the R register (see Figure 16). The bit stream needs neither address nor steering bits due to the innovative BitGrabber Plus registers. Therefore, all bits in the stream are available to be data for the three registers. Random access of any register is provided (i.e., the registers may be accessed in any sequence). Data is retained in the registers over a supply range of 2.7 to 5.5 V. The formats are shown in Figures 14, 15, and 16. Din typically switches near 50% of VDD to maximize noise immunity. This input can be directly interfaced to CMOS devices with outputs guaranteed to switch near rail-to-rail. When interfacing to NMOS or TTL devices, either a level shifter (MC74HC14A, MC14504B) or pull-up resistor of 1 k to 10 k must be used. Parameters to consider when sizing the resistor are worst-case IOL of the driving device, maximum tolerable power consumption, and maximum data rate. Table 3. Register Access (MSBs are shifted in first; C0, R0, and A0 are the LSBs) Number of Clocks Accessed Register Bit Nomenclature 8 16 24 Other Values 32 Values > 32 C Register R Register A Register Not Allowed See Figures 22 - 25 C7, C6, C5, . . ., C0 R15, R14, R13, . . ., R0 A23, A22, A21, . . ., A0 MC145193 4.2-132 Low-to-high transitions on CLK shift bits available at the Din pin, while high-to-low transitions shift bits from Output A (when configured as Data Out, see Pin 16). The 24-1/2-stage shift register is static, allowing clock rates down to dc in a continuous or intermittent mode. Eight clock cycles are required to access the C register. Sixteen clock cycles are needed for the first buffer of the R register. Twenty-four cycles are used to access the A register. See Table 3 and Figures 14, 15, and 16. The number of clocks required for cascaded devices is shown in Figures 23 through 25. CLK typically switches near 50% of VDD and has a Schmitt-triggered input buffer. Slow CLK rise and fall times are allowed. See the last paragraph of Din for more information. NOTE To guarantee proper operation of the power-on reset (POR) circuit, the CLK pin must be held at Gnd (with ENB being a don't care) or ENB must be held at the potential of the V+ pin (with CLK being a don't care) during power-up. Floating, toggling, or having these pins in the wrong state during power-up does not harm the chip, but causes two potentially undesirable effects. First, the outputs of the device power up in an unknown state. Second, if two devices are cascaded, the A Registers must be written twice after power up. After these two accesses, the two cascaded chips perform normally. ENB Active Low Enable Input (Pin 17) This pin is used to activate the serial interface to allow the transfer of data to/from the device. When ENB is in an inactive high state, shifting is inhibited and the port is held in the initialized state. To transfer data to the device, ENB (which must start inactive high) is taken low, a serial transfer is made via Din and CLK, and ENB is taken back high. The low-to-high transition on ENB transfers data to the C or A registers and first buffer of the R register, depending on the data stream length per Table 3. Transitions on ENB must not be attempted while CLK is high. This puts the device out of synchronization with the microcontroller. Resynchronization occurs when ENB is high and CLK is low. This input is also Schmitt-triggered and switches near 50% of VDD, thereby minimizing the chance of loading erroneous data into the registers. See the last paragraph of Din for more information. For POR information, see the note for the CLK pin. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145193 Output A Configurable Digital Output (Pin 16) Output A is selectable as fR, fV, Data Out, or Port. Bits A22 and A23 in the A register control the selection; see Figure 15. If A23 = A22 = high, Output A is configured as fR. This signal is the buffered output of the 13-stage R counter. The fR signal appears as normally low and pulses high. The fR signal can be used to verify the divide ratio of the R counter. This ratio extends from 5 to 8191 and is determined by the binary value loaded into bits R0-R12 in the R register. Also, direct access to the phase detectors via the REFin pin is allowed by choosing a divide value of 1 (see Figure 16). The maximum frequency at which the phase detectors operate is 2 MHz. Therefore, the frequency of fR should not exceed 2 MHz. If A23 = high and A22 = low, Output A is configured as fV. This signal is the buffered output of the 12-stage N counter. The fV signal appears as normally low and pulses high. The fV signal can be used to verify the operation of the prescaler, A counter, and N counter. The divide ratio between the fin input and the fV signal is N x 64 + A. N is the divide ratio of the N counter and A is the divide ratio of the A counter. These ratios are determined by bits loaded into the A register. See Figure 15. The maximum frequency at which the phase detectors operate is 2 MHz. Therefore, the frequency of fV should not exceed 2 MHz. If A23 = low and A22 = high, Output A is configured as Data Out. This signal is the serial output of the 24-1/2-stage shift register. The bit stream is shifted out on the high-to-low transition of the CLK input. Upon power up, Output A is automatically configured as Data Out to facilitate cascading devices. If A23 = A22 = low, Output A is configured as Port. This signal is a general-purpose digital output which may be used as an MCU port expander. This signal is low when the Port bit (C1) of the C register is low, and high when the Port bit is high. Output B Open-Drain Digital Output (Pin 15) This signal is a general-purpose digital output which may be used as an MCU port expander. This signal is low when the Out B bit (C0) of the C register is low. When the Out B bit is high, Output B assumes the high-impedance state. Output B may be pulled up through an external resistor or active circuitry to any voltage less than or equal to the potential of the VPD pin. Note: the maximum voltage allowed on the VPD pin is 5.5 V. Upon power-up, power-on reset circuitry forces Output B to a low level. REFERENCE PINS REFin and REFout Reference Input and Reference Output (Pins 20 and 1) Configurable pins for a Crystal or an External Reference. This pair of pins can be configured in one of two modes: the crystal mode or the reference mode. Bits R13, R14, and R15 in the R register control the modes as shown in Figure 16. In crystal mode, these pins form a reference oscillator when connected to terminals of an external parallel-resonant crystal. Frequency-setting capacitors of appropriate values, as recommended by the crystal supplier, are connected from each of the two pins to ground (up to a maximum of 30 pF each, including stray capacitance). An external resistor of 1 M to 15 M is connected directly across the pins to ensure linear operation of the amplifier. The required connections for the components are shown in Figure 9. To turn on the oscillator, bits R15, R14, and R13 must have an octal value of one (001 in binary, respectively). This is the active-crystal mode shown in Figure 16. In this mode, the crystal oscillator runs and the R Counter divides the crystal frequency, unless the part is in standby. If the part is placed in standby via the C register, the oscillator runs, but the R counter is stopped. However, if bits R15 to R13 have a value of 0, the oscillator is stopped, which saves additional power. This is the shut-down crystal mode (shown in Figure 16) and can be engaged whether in standby or not. In the reference mode, REFin (Pin 20) accepts a signal from an external reference oscillator, such as a TCXO. A signal swinging from at least the VIL to VIH levels listed in the Electrical Characteristics table may be directly coupled to the pin. If the signal is less than this level, ac coupling must be used as shown in Figure 8. Due to an on-board resistor which is engaged in the reference modes, an external biasing resistor tied between REFin and REFout is not required. With the reference mode, the REFout pin is configured as the output of a divider. As an example, if bits R15, R14, and R13 have an octal value of seven, the frequency at REFout is the REFin frequency divided by 16. In addition, Figure 16 shows how to obtain ratios of eight, four, and two. A ratio of one-to-one can be obtained with an octal value of three. Upon power up, a ratio of eight is automatically initialized. The maximum frequency capability of the REFout pin is listed in the Loop Specifications table for an output swing of 1 Vpp and 20 pF loads. Therefore, for higher REFin frequencies, the one-to-one ratio may not be used for this magnitude of signal swing and loading requirements. Likewise, for REFin frequencies above two times the highest rated frequency, the ratio must be more than two. The output has a special on-board driver that has slew-rate control. This feature minimizes interference in the application. If REFout is unused, an octal value of two should be used for R15, R14, and R13 and the REFout pin should be floated. A value of two allows REFin to be functional while disabling REFout, which minimizes dynamic power consumption. LOOP PINS fin and fin Frequency Inputs (Pins 11 and 10) These pins are frequency inputs from the VCO. These pins feed the on-board RF amplifier which drives the 64/65 prescaler. These inputs may be fed differentially. However, they are usually used in a single-ended configuration (shown in Figure 7). Note that fin is driven while fin must be tied to ground via a capacitor. Motorola does not recommend driving fin while terminating fin because this configuration is not tested for sensitivity. The sensitivity is dependent on the frequency as shown in the Loop Specifications table. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145193 4.2-133 MC145193 PDout Single-Ended Phase/Frequency Detector Output (Pin 6) This is a three-state current-source/sink output for use as a loop error signal when combined with an external low-pass filter. The phase/frequency detector is characterized by a linear transfer function. The operation of the phase/frequency detector is described below and is shown in Figure 17. POL bit (C7) in the C register = low (see Figure 14) Frequency of f V > f R or Phase of f V Leading f R : current-sinking pulses from a floating state Frequency of f V < f R or Phase of f V Lagging f R : current-sourcing pulses from a floating state Frequency and Phase of fV = fR: essentially a floating state; voltage at pin determined by loop filter POL bit (C7) = high Frequency of f V > f R or Phase of f V Leading f R : current-sourcing pulses from a floating state Frequency of f V < f R or Phase of f V Lagging f R : current-sinking pulses from a floating state Frequency and Phase of fV = fR: essentially a floating state; voltage at pin determined by loop filter This output can be enabled, disabled, and inverted via the C register. If desired, PD out can be forced to the high-impedance state by utilization of the disable feature in the C register (bit C6). This is a patented feature. Similarly, PDout is forced to the high-impedance state when the device is put into standby (STBY bit C4 = high). The PDout circuit is powered by VPD. The phase detector gain is controllable by bits C3, C2, and C1: gain (in amps per radian) = PDout current divided by 2. R and V (Pins 3 and 4) Double-Ended Phase/Frequency Detector Outputs These outputs can be combined externally to generate a loop error signal. Through use of a Motorola patented technique, the detector's dead zone has been eliminated. Therefore, the phase/frequency detector is characterized by a linear t r ans fe r fu n c ti o n . T h e o p e ra ti on of the phase/frequency detector is described below and is shown in Figure 17. POL bit (C7) in the C register = low (see Figure 14) Frequency of fV > fR or Phase of fV Leading fR: V = negative pulses, R = essentially high Frequency of fV < fR or Phase of fV Lagging fR: V = essentially high, R = negative pulses Frequency and Phase of f V = f R : V and R remain essentially high, except for a small minimum time period when both pulse low in phase POL bit (C7) = high Frequency of fV > fR or Phase of fV Leading fR: R = negative pulses, V = essentially high Frequency of fV < fR or Phase of fV Lagging fR: R = essentially high, V = negative pulses Frequency and Phase of f V = f R : V and R remain essentially high, except for a small minimum time period when both pulse low in phase These outputs can be enabled, disabled, and interchanged via C register bits C6 or C4. This is a patented MC145193 4.2-134 feature. Note that when disabled or in standby, R and V are forced to their rest condition (high state). The R and V output signal swing is approximately from Gnd to VPD. LD Lock Detector Output (Pin 2) This output is essentially at a high level with narrow low-going pulses when the loop is locked (fR and fV of the same phase and frequency). The output pulses low when fV and fR are out of phase or different frequencies. LD is the logical ANDing of R and V (see Figure 17). This output can be enabled and disabled via the C register. This is a patented feature. Upon power up, on-chip initialization circuitry disables LD to a static low logic level to prevent a false "lock" signal. If unused, LD should be disabled and left open. The LD output signal swing is approximately from Gnd to VDD. Rx External Resistor (Pin 8) A resistor tied between this pin and Gnd, in conjunction with bits in the C register, determines the amount of current that the PDout pin sinks and sources. When bits C2 and C3 are both set high, the maximum current is obtained at PDout; see Tables 4 and 5 for other current values. The recommended value for Rx is 3.9 k (preliminary) . A value of 3.9 k provides current at the PDout pin of approximately 1 mA @ VDD = 3 V and approximately 1.7 mA @ VDD = 5 V in the 100% current mode. Note that VDD, not VPD, is a factor in determining the current. When the R and V outputs are used, the Rx pin may be floated. Table 4. PDout Current*, C1 = Low with Output A not Selected as "Port"; Also, Default Mode When Output A Selected as "Port" Bit C3 Bit C2 PDout Current* 0 0 1 1 0 1 0 1 70% 80% 90% 100% * At the time the data sheet was printed, only the 100% current mode was guaranteed. The reduced current modes were for experimentation only. Table 5. PDout Current*, C1 = High with Output A not Selected as "Port" Bit C3 Bit C2 PDout Current* 0 0 1 1 0 1 0 1 25% 50% 75% 100% * At the time the data sheet was printed, only the 100% current mode was guaranteed. The reduced current modes were for experimentation only. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145193 TEST POINT PINS Test 1 Modulus Control Signal (Pin 9) This pin may be used in conjunction with the Test 2 pin for access to the on-board 64/65 prescaler. When Test 1 is low, the prescaler divides by 65. When high, the prescaler divides by 64. CAUTION This pin is an unbuffered output and must be floated in an actual application. This pin must be attached to an isolated pad with no trace. Test 2 Prescaler Output (Pin 13) This pin may be used to access the on-board 64/65 prescaler output. CAUTION This pin is an unbuffered output and must be floated in an actual application. This pin must be attached to an isolated pad with no trace. POWER SUPPLY PINS VDD Positive Power Supply (Pin 14) This pin supplies power to the main CMOS digital portion of the device. Also, this pin, in conjunction with the Rx resistor, determines the internal reference current for the PDout pin. The voltage range is 2.7 to 5.5 V with respect to the Gnd pin. For optimum performance, VDD should be bypassed to Gnd using a low-inductance capacitor mounted very close to these pins. Lead lengths on the capacitor should be minimized. VCC Positive Power Supply (Pin 12) This pin supplies power to the RF amp and 64/65 prescaler. The voltage range is 2.7 to 5.5 V with respect to the Gnd pin. In standby mode, the VCC pin still draws a few milliamps from the power supply. This current drain can be eliminated with the use of transistor Q1 as shown in Figure 21. For optimum performance, VCC should be bypassed to Gnd using a low-inductance capacitor mounted very close to these pins. Lead lengths on the capacitor should be minimized. VPD Positive Power Supply (Pin 5) This pin supplies power to both phase/frequency detectors A and B. The voltage applied on this pin may be more or less than the potential applied to the VDD and VCC pins. The voltage range for VPD is 2.7 to 5.5 V with respect to the Gnd pin. For optimum performance, VPD should be bypassed to Gnd using a low-inductance capacitor mounted very close to these pins. Lead lengths on the capacitor should be minimized. Gnd Ground (Pin 7) Common ground. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145193 4.2-135 MC145193 Figure 14. C Register Access and Format (8 Clock Cycles are Used) ENB NOTE 1 CLK 2 3 4 5 6 7 MSB Din C7 8 LSB C6 C5 C4 C3 C2 C1 C0 NOTE: At this point, the new byte is transferred to the C register and stored. No other registers are affected. C7 - POL: Selects the output polarity of the phase/frequency detectors. When set high, this bit inverts PDout and interchanges the R function with V as depicted in Figure 17. Also see the phase detector output pin descriptions for more information. This bit is cleared low at power up. C6 - PDA/B: Selects which phase/frequency detector is to be used. When set high, enables the output of phase/frequency detector A (PDout) and disables phase/frequency detector B by forcing R and V to the static high state. When cleared low, phase/frequency detector B is enabled (R and V) and phase/frequency detector A is disabled with PDout forced to the high-impedance state. This bit is cleared low at power up. C5 - LDE: Enables the lock detector output when set high. When the bit is cleared low, the LD output is forced to a static low level. This bit is cleared low at power up. C4 - STBY: When set, places the CMOS section of device, which is powered by the VDD and VPD pins, in the standby mode for reduced power consumption: PDout is forced to the high-impedance state, R and V are forced high, the A, N, and R counters are inhibited from counting, and the Rx current is shut off. In standby, the state of LD is determined by bit C5. C5 low forces LD low (no change). C5 high forces LD static high. During standby, data is retained in the A, R, and C registers. The condition of REF/OSC circuitry is determined by the control bits in the R register: R13, R14, and R15. However, if REFout = static low is selected, the internal feedback resistor is disconnected and the input is inhibited when in standby; in addition, the REFin input only presents a capacitive load. NOTE: Standby does not affect the other modes of the REF/OSC circuitry. When C4 is reset low, the part is taken out of standby in two steps. First, the REFin (only in one mode) resistor is reconnected, all counters are enabled, and the Rx current is enabled. Any fR and fV signals are inhibited from toggling the phase/frequency detectors and lock detector. Second, when the first fV pulse occurs, the R counter is jam loaded, and the phase/frequency and lock detectors are initialized. Immediately after the jam load, the A, N, and R counters begin counting down together. At this point, the fR and fV pulses are enabled to the phase and lock detectors. (Patented feature.) C3, C2 - I2, I1: Controls the PDout source/sink current per Tables 4 and 5. With both bits high, the maximum current is available. Also, see C1 bit description. C1 - Port: When the Output A pin is selected as "Port" via bits A22 and A23, C1 determines the state of Output A. When C1 is set high, Output A is forced high; C1 low forces Output A low. When Output A is not selected as "Port," C1 controls whether the PDout step size is 10% or 25%. (See Tables 4 and 5.) When low, steps are 10%. When high, steps are 25%. Default is 10% steps when Output A is selected as "Port." The Port bit is not affected by the standby mode. C0 - Out B: Determines the state of Output B. When C0 is set high, Output B is high-impedance; C0 low forces Output B low. The Out B bit is not affected by the standby mode. This bit is cleared low at power up. MC145193 4.2-136 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ENB Note 3 1 CLK 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 LSB CC CC CC C C CC C C CC C C C C C C C C C C C C CC C C CC C C CC C C C C C C C C CC C C CC C C CC C C C C C C C C C C C C C C C C CC MSB 24 D in A23 A22 A21 1 Port Data Out fV fR Binary Value Output A Function (Note 1) 1 Both Bits Must Be High A19 A18 A17 A16 A15 A14 A13 A12 A11 A10 A9 0 0 0 0 0 0 0 0 . . . 0 0 0 0 0 0 0 0 . . . 0 1 2 3 4 5 6 7 . . . F F E N COUNTER = /4094 F F F N COUNTER = /4095 Hexadecimal Value For N Counter Not Allowed Not Allowed Not Allowed Not Allowed Not Allowed N COUNTER = /5 N COUNTER = /6 N COUNTER = /7 A8 A7 A6 A5 A4 A3 A2 A1 0 0 0 0 . . . 0 1 2 3 . . . 3 3 E F 4 4 . . . 0 1 . . . Not Allowed Not Allowed F F Not Allowed A COUNTER A COUNTER A COUNTER A COUNTER A0 = /0 = /1 = /2 = /3 A COUNTER = / 62 A COUNTER = / 63 Hexadecimal Value For A Counter MC145193 4.2-137 NOTES: 1. A power-on initialize circuit forces the Output A function to default to Data Out. 2. The values programmed for the N counter must be greater than or equal to the values programmed for the A counter. This results in a total divide value = N x 64 + A. 3. At this point, the three new bytes are transferred to the A register. In addition, the 13 LSBs in the first buffer of the R register are transferred to the R register's second buffer. Thus, the R, N, and A counters can be presented new divide ratios at the same time. The first buffer of the R register is not affected. The C register is not affected. Figure 15. 0 1 0 1 0 0 1 1 A20 MC145193 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Figure 15. A Register Access and Format (24 Clock Cycles are Used) MC145193 Figure 16. R Register Access and Format (16 Clock Cycles are Used) ENB CLK 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 MSB Din R15 16 Note 4 Note 5 LSB R14 R13 R12 R11 R10 0 Crystal Mode, Shut Down 1 Crystal Mode, Active 2 Reference Mode, REFin Enabled and REFout Static Low 3 Reference Mode, REFout = REFin (Buffered) 4 Reference Mode, REFout = REFin/2 5 Reference Mode, REFout = REFin/4 6 Reference Mode, REFout = REFin/8 (Note 3) 7 Reference Mode, REFout = REFin/16 Octal Value R9 0 0 0 0 0 0 0 0 0 * * * 1 1 R8 0 0 0 0 0 0 0 0 0 * * * F F R7 0 0 0 0 0 0 0 0 0 * * * F F 0 1 2 3 4 5 6 7 8 * * * E F R6 R5 R4 R3 R2 R1 R0 Not Allowed R COUNTER = / 1 (Note 6) Not Allowed Not Allowed Not Allowed R COUNTER = / 5 R COUNTER = / 6 R COUNTER = / 7 R COUNTER = / 8 R COUNTER = / 8190 R COUNTER = / 8191 Binary Value Hexadecimal Value NOTES: 1 Bits R15 through R13 control the configurable "OSC or 4-stage divider" block (see Block Diagram). 2 Bits R12 through R0 control the "13-stage R counter" block (see Block Diagram). 3 A power-on initialize circuit forces a default REFin to REFout ratio of eight. 4 At this point, bits R13, R14, and R15 are stored and sent to the "OSC or 4-Stage Divider" block in the Block Diagram. Bits R0 - R12 are loaded into the first buffer in the double-buffered section of the R register. Therefore, the R counter divide ratio is not altered yet and retains the previous ratio loaded. The C and A registers are not affected. 5 Optional load pulse. At this point, bits R0 - R12 are transferred to the second buffer of the R register. The R counter begins dividing by the new ratio after completing the rest of the present count cycle. CLK must be low during the ENB pulse, as shown. The C and A registers are not affected. The first buffer of the R register is not affected. Also, see Note 3 of Figure 15 for an alternate method of loading the second buffer in the R register. 6 Allows direct access to reference input of phase/frequency detectors. MC145193 4.2-138 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145193 Figure 17. Phase/Frequency Detectors and Lock Detector Output Waveforms fR Reference REFin / R VH VL fV Feedback fin / (N x 64 + A) VH VL * PDout Sourcing Current Float Sinking Current R VH VL V VH VL LD VH VL VH = High voltage level VL = Low voltage level *At this point, when both fR and fV are in phase, the output source and sink circuits are turned on for a short interval. NOTE: The PDout either sources or sinks current during out-of-lock conditions. When locked in phase and frequency, the output is in the floating condition and the voltage at that pin is determined by the low-pass filter capacitor. PDout, R, and V are shown with the polarity bit (POL) = low; see Figure 14 for POL. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145193 4.2-139 MC145193 DESIGN CONSIDERATIONS Crystal Oscillator Considerations The following options may be considered to provide a reference frequency to Motorola's CMOS frequency synthesizers. Use of a Hybrid Crystal Oscillator Commercially available temperature-compensated crystal oscillators (TCXOs) or crystal-controlled data clock oscillators provide very stable reference frequencies. An oscillator capable of CMOS logic levels at the output may be direct or dc coupled to REFin. If the oscillator does not have CMOS logic levels on the outputs, capacitive or ac coupling to REFin may be used (see Figure 8). For additional information about TCXOs and data clock oscillators, please consult the latest version of the eem Electronic Engineers Master Catalog, the Gold Book, or similar publications. Design an Off-Chip Reference The user may design an off-chip crystal oscillator using discrete transistors or ICs specifically developed for crystal oscillator applications. The reference signal is usually ac coupled to REFin (see Figure 8). For large amplitude signals (standard CMOS logic levels), dc coupling may be used. shift in operating frequency. R1 in Figure 18 limits the drive level. The use of R1 is not necessary in most cases. To verify that the maximum dc supply voltage does not cause the crystal to be overdriven, monitor the output frequency (fR) at Output A as a function of supply voltage. (REFout is not used because loading impacts the oscillator.) The frequency should increase very slightly as the dc supply voltage is increased. An overdriven crystal decreases in frequency or becomes unstable with an increase in supply voltage. The operating supply voltage must be reduced or R1 must be increased in value if the overdriven condition exists. The user should note that the oscillator start-up time is proportional to the value of R1. Through the process of supplying crystals for use with CMOS inverters, many crystal manufacturers have developed expertise in CMOS oscillator design with crystals. Discussions with such manufacturers can prove very helpful (see Table 2). Figure 18. Pierce Crystal Oscillator Circuit Frequency Synthesizer Use of the On-Chip Oscillator Circuitry The on-chip amplifier (a digital inverter) along with an appropriate crystal may be used to provide a reference source frequency. A fundamental mode crystal, parallel resonant at the desired operating frequency, should be connected as shown in Figure 18. The crystal should be specified for a loading capacitance (CL ) which does not exceed approximately 20 pF when used at the highest operating frequencies listed in the Loop Specifications table. Assuming R1 = 0 , the shunt load capacitance (CL ) presented across the crystal can be estimated to be: REFout Rf R1* C1 C2 * May be needed in certain cases. See text. Figure 19. Parasitic Capacitances of the Amplifier and Cstray CL = CinCout + Ca + Cstray + C1 * C2 C1 + C2 Cin + Cout Ca REFin where Cin = 5 pF (see Figure 19) Cout = 6 pF (see Figure 19) Ca = 1 pF (see Figure 19) C1 and C2 = external capacitors (see Figure 18) Cstray = the total equivalent external circuit stray capacitance appearing across the crystal terminals The oscillator can be "trimmed" on-frequency by making a portion or all of C1 variable. The crystal and associated components must be located as close as possible to the REFin and REFout pins to minimize distortion, stray capacitance, stray inductance, and startup stabilization time. Circuit stray capacitance can also be handled by adding the appropriate stray value to the values for Cin and Cout. For this approach, the term Cstray becomes 0 in the above expression for CL. Power is dissipated in the effective series resistance of the crystal, Re, in Figure 20. The maximum drive level specified by the crystal manufacturer represents the maximum stress that the crystal can withstand without damage or excessive MC145193 4.2-140 REFin REFout Cin Cout Cstray Figure 20. Equivalent Crystal Networks RS 1 2 CS LS 1 2 CO 1 Re Xe 2 NOTE: Values are supplied by crystal manufacturer (parallel resonant crystal). MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145193 RECOMMENDED READING Technical Note TN-24, Statek Corp. Technical Note TN-7, Statek Corp. E. Hafner, "The Piezoelectric Crystal Unit-Definitions and Method of Measurement", Proc. IEEE, Vol. 57, No. 2, Feb. 1969. D. Kemper, L. Rosine, "Quartz Crystals for Frequency Control", Electro-Technology, June 1969. P. J. Ottowitz, "A Guide to Crystal Selection", Electronic Design, May 1966. D. Babin, "Designing Crystal Oscillators", Machine Design, March 7, 1985. D. Babin, "Guidelines for Crystal Oscillator Design", Machine Design, April 25, 1985. Table 6. Partial List of Crystal Manufacturers CTS Corp. United States Crystal Corp. Crystek Crystal Statek Corp. Fox Electronics NOTE: Motorola cannot recommend one supplier over another and in no way suggests that this is a complete listing of crystal manufacturers. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145193 4.2-141 MC145193 PHASE-LOCKED LOOP -- LOW-PASS FILTER DESIGN (A) PDout K KVCO NC n = VCO R = C K KVCOC N R 2 = nRC 2 1 + sRC Z(s) = sC NOTE: For (A), using K in amps per radian with the filter's impedance transfer function, Z(s), maintains units of volts per radian for the detector/filter combination. Additional sideband filtering can be accomplished by adding a capacitor C across R. The corner c = 1/RC should be chosen such that n is not significantly affected. R2 (B) R R1 - V + R1 n = C A VCO = K KVCO NCR1 nR2C 2 R2 Assuming Gain A is very large, then: C F(s) = R2sC + 1 R1sC NOTE: For (B), R1 is frequently split into two series resistors; each resistor is equal to R1 divided by 2. A capacitor CC is then placed from the midpoint to ground to further filter the error pulses. The value of CC should be such that the corner frequency of this network does not significantly affect n. DEFINITIONS: N = Total Division Ratio in Feedback Loop K (Phase Detector Gain) = IPDout / 2 amps per radian for PDout K (Phase Detector Gain) = VPD / 2 volts per radian for V and R 2fVCO radians per volt KVCO (VCO Transfer Function) = VVCO For a nominal design starting point, the user might consider a damping factor 0.7 and a natural loop frequency n (2fR / 50) where fR is the frequency at the phase detector input. Larger n values result in faster loop lock times and, for similar sideband filtering, higher fR-related VCO sidebands. Either loop filter (A) or (B) is frequently followed by additional sideband filtering to further attenuate fR-related VCO sidebands. This additional filtering may be active or passive. RECOMMENDED READING: Gardner, Floyd M., Phaselock Techniques (second edition). New York, Wiley-Interscience, 1979. Manassewitsch, Vadim, Frequency Synthesizers: Theory and Design (second edition). New York, Wiley-Interscience, 1980. Blanchard, Alain, Phase-Locked Loops: Application to Coherent Receiver Design. New York, Wiley-Interscience, 1976. Egan, William F., Frequency Synthesis by Phase Lock. New York, Wiley-Interscience, 1981. Rohde, Ulrich L., Digital PLL Frequency Synthesizers Theory and Design. Englewood Cliffs, NJ, Prentice-Hall, 1983. Berlin, Howard M., Design of Phase-Locked Loop Circuits, with Experiments. Indianapolis, Howard W. Sams and Co., 1978. Kinley, Harold, The PLL Synthesizer Cookbook. Blue Ridge Summit, PA, Tab Books, 1980. Seidman, Arthur H., Integrated Circuits Applications Handbook, Chapter 17, pp. 538-586. New York, John Wiley & Sons. Fadrhons, Jan, "Design and Analyze PLLs on a Programmable Calculator," EDN. March 5, 1980. AN535, Phase-Locked Loop Design Fundamentals, Motorola Semiconductor Products, Inc., 1970. AR254, Phase-Locked Loop Design Articles, Motorola Semiconductor Products, Inc., Reprinted with permission from Electronic Design, 1987. AN1253, An Improved PLL Design Method Without n and , Motorola Semiconductor Products, Inc., 1995. MC145193 4.2-142 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145193 Figure 21. Example Application Threshold Detector +3 V 1 REF out 3 R 4 V ENB 5 +3V 6 Low-pass Filter 7 8 NC 20 Din 19 18 CLK 2 LD Integrator REFin 9 10 VPD Output A PDout Output B Gnd VDD Rx Test 2 Test 1 VCC fin MCU 17 16 General-purpose Digital Output 15 +3 V 14 13 NC Q1 Note 2 12 fin 11 1000 pF UHF VCO UHF Output Buffer NOTES: 1 When used, the R and V outputs are fed to an external combiner/loop filter. See the Phase- Locked Loop -- Low-Pass Filter Design (Page 4.2-142) for additional information. 2 Transistor Q1 is required only if the standby feature is needed. Q1 permits the bipolar section of the device to be shut down via use of the general-purpose digital pin, Output B. If the standby feature is not needed, tie Pin 12 directly to the power supply. 3 For optimum performance, bypass the VCC, VDD, and VPD pins to Gnd with low-inductance capacitors. 4 The R counter is programmed for a divide value = REFin / fR. Typically, fR is the tuning resolution required for the VCO. Also, the VCO frequency divided by fR = NT = N x 64 + A; this determines the values (N, A) that must be programmed into the N and A counters, respectively. Figure 22. Cascading Two Devices Device #2 (MC145193 or MC145202-1) Output A (Data Out) Din CLK ENB Device #1 (MC145193 or MC145202-1) Output A (Data Out) Din CLK ENB CMOS MCU Optional NOTE: See related Figures 23, 24, and 25. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145193 4.2-143 MC145193 4.2-144 Figure 23. Accessing the C Registers of Two Cascaded MC145193 or MC145202-1 Devices ENB * 1 2 7 8 9 10 15 16 17 18 23 24 25 26 31 32 Figure 23. C C C C C C C C C C CC CC C C C C C C C CCC C CC CC C CCC C C C C C C C CC CC C CCC CCC C C C C C C C C C CCC C C C C C C C C C CCC CLK D in C7 C6 C0 X X X X X X C7 C Register Bits of Device #2 in Figure 22 C6 C0 C Register Bits of Device #1 in Figure 22 *At this point, the new bytes are transferred to the C registers of both devices and stored. No other registers are affected. MC145193 ENB * 1 2 7 8 9 15 16 17 23 24 25 31 32 38 39 40 47 48 C C C C C C C CC C C C C C CC CC CC C C C C CC C C C C C C CC C C CC CC C C CC CC C C C C CC CC CLK Figure 24. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Figure 24. Accessing the A Registers of Two Cascaded MC145193 or MC145202-1 Devices Din A23 A22 A16 A15 A8 A Register bits of Device #2 in Figure 22 A7 A0 A23 A16 A9 A8 A Register Bits of Device #1 in Figure 22 * At this point, the new bytes are transferred to the A registers of both devices and stored. Additionally, for both devices, the 13 LSBs in each of the first buffers of the R registers are transferred to the respective R register's second buffer. Thus, the R, N, and A counter can be presented new divide ratios at the same time. The first buffer of each R register is not affected. Neither C register is affected. A0 ENB Note 1 Note 2 2 R15 R14 8 9 15 16 17 23 24 25 31 32 33 39 40 R8 R7 R Register Bits of Device #2 in Figure 22 R0 X X R15 R8 R7 R0 R Register Bits of Device #1 in Figure 22 Notes Applicable to Each Device: 1. At this point, bits R13, R14 and R15 are stored and sent to the ``OSC or 4-Stage Divider" block in the Block Diagram. Bits R0 through R12 are loaded into the first buffer in the double-buffered section of the R register. Therfore, the R counter divide is not altered yet and retains the previous ratio loaded. The C and A registers are not affected. 2. Optional load pulse. At this point, the bits R0 through R12 are transfered to the second buffer of the R register. The R counter begins dividing by the new ratio after completing the rest of the present count cycle. CLK must be low during the ENB pulse, as shown. The C and A registers are not affected. The first buffer of the R register is not affected. Also, see note of Figure 24 for an alternate method of loading the second buffer in the R register. MC145193 Din 7 C C C C C C C C C CCC CCC C C C CCC CCC CCC C C C C C C CCC C C C C C C C C C CCC C C C C C C C C C C C C C C C CCC CCC 1 C C C CCC C CC CC C CLK Figure 25. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Figure 25. Accessing the R Registers of Two Cascaded MC145193 or MC145202-1 Devices MC145193 4.2-145 2.0 GHz PLL Frequency Synthesizer The MC145202-1 is recommended for new designs and has improved suppression of reference sideband spurs. The counters are programmed via a synchronous serial port which is SPI compatible. The serial port is byte-oriented to facilitate control via an MCU. Due to the innovative BitGrabber Plus registers, the MC145202-1 may be cascaded with other peripherals featuring BitGrabber Plus without requiring leading dummy bits or address bits in the serial data stream. In addition, BitGrabber Plus peripherals may be cascaded with existing BitGrabber peripherals. The device features a single-ended current source/sink phase detector A output and a double-ended phase detector B output. Both phase detectors have linear transfer functions (no dead zones). The maximum current of the single-ended phase detector output is determined by an external resistor tied from the Rx pin to ground. This current can be varied via the serial port. Slew-rate control is provided by a special driver designed for the REFout pin. This minimizes interference caused by REFout. This part includes a differential RF input that may be operated in a single-ended mode. Also featured are on-board support of an external crystal and a programmable reference output. The R, A, and N counters are fully programmable. The C register (configuration register) allows the part to be configured to meet various applications. A patented feature allows the C register to shut off unused outputs, thereby minimizing system noise and interference. In order to have consistent lock times and prevent erroneous data from being loaded into the counters, on-board circuitry synchronizes the update of the A register if the A or N counters are loading. Similarly, an update of the R register is synchronized if the R counter is loading. The double-buffered R register allows new divide ratios to be presented to the three counters (R, A, and N) simultaneously. * Maximum Operating Frequency: 2000 MHz @ - 10 dBm * * * * * * * * * * * Operating Supply Current: 4 mA Nominal at 3.0 V Operating Supply Voltage Range (VDD, VCC, VPD Pins): 2.7 to 5.5 V Current Source/Sink Phase Detector Output: 1.7 mA @ 5.0 V or 1.0 mA @ 3.0 V Gain of Current Source/Sink Phase/Frequency Detector Controllable via Serial Port R Counter Division Range: 1 and 5 to 8191 Dual-Modulus Capability Provides Total Division up to 262,143 High-Speed Serial Interface: 4 Mbps Output A Pin, When Configured as Data Out, Permits Cascading of Devices Two General-Purpose Digital Outputs: Output A: Totem-Pole (Push-Pull) with Four Output Modes Output B: Open-Drain Patented Power-Saving Standby Feature with Orderly Recovery for Minimizing Lock Times, Standby Current: 30 A See App Note AN1253/D for Low-Pass Filter Design, and AN1277/D for Offset Reference PLLs for Fine Resolution or Fast Hopping MC145202-1 PLL FREQUENCY SYNTHESIZER SEMICONDUCTOR TECHNICAL DATA 20 1 F SUFFIX PLASTIC PACKAGE CASE 751J (SO-20) PIN CONNECTIONS REFout LD 1 2 20 REFin 19 Din R V 3 18 CLK 4 17 ENB VPD PDout 5 16 Output A 6 15 Output B Gnd 7 Rx 8 14 VDD 13 Test 2 Test 1 9 12 VCC 11 fin fin 10 (Top View) EVALUATION KIT The P/N MC145202-1EVK, which contains hardware and software, is available. ORDERING INFORMATION MC145202-1 4.2-146 Device Operating Temperature Range Package MC145202F1 TA = -40 to 85C SO-20 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145202-1 BLOCK DIAGRAM Data Out REFin REFout 20 OSC or 4-Stage Divider (Configurable) 1 fR 13-Stage R Counter Port fV Din 2 Lock Detector And Control 18 8 Shift Register And Control Logic 19 BitGrabber C Register 8 Bits 24 Standby Logic ENB 16 Output A 13 3 Double-buffered BitGrabber R Register 16 Bits CLK Select Logic Phase/Frequency Detector A And Control 6 LD Rx PDout POR 17 3 R 4 V Phase/Frequency Detector B And Control 2 BitGrabber A Register 24 Bits Internal Control fin fin 6 4 12 6-Stage A Counter 12-Stage N Counter 64/65 Prescaler Modulus Control Logic 15 Output B (Open- Drain Output) 11 10 Input AMP Supply Connections: Pin 12 = VCC (V+ To Input AMP and 64/65 Prescaler) Pin 5 = VPD (V+ To Phase/Frequency Detectors A and B) Pin 14 = VDD (V+ To Balance Of Circuit) Pin 7 = Gnd (Common Ground) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 13 9 Test 2 Test 1 This device contains 7,278 active transistors. MC145202-1 4.2-147 MC145202-1 MAXIMUM RATINGS* (Voltages Referenced to Gnd, unless otherwise stated) Parameter Symbol Value Unit VCC, VDD -0.5 to 6.0 V VPD VDD - 0.5 to 6.0 V DC Input Voltage Vin -0.5 to VDD + 0.5 V DC Output Voltage (except Output B, PDout, R, V) Vout -0.5 to VDD + 0.5 V DC Output Voltage (Output B, PDout, R, V) Vout -0.5 to VPD + 0.5 V Iin, IPD 10 mA DC Output Current, per Pin Iout 20 mA DC Supply Current, VDD and Gnd Pins IDD 30 mA Power Dissipation, per Package PD 300 mW Storage Temperature Tstg -65 to 150 C TL 260 C DC Supply Voltage (Pins 12 and 14) DC Supply Voltage (Pin 5) DC Input Current, per Pin (Includes VPD) Lead Temperature, 1 mm from Case for 10 Seconds This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Electrical Characteristics tables or Pin Descriptions section. 2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) 2000 V and Machine Model (MM) 200 V. Additional ESD data available upon request. ELECTRICAL CHARACTERISTICS (VDD = VCC = 2.7 to 5.5 V, Voltages Referenced to Gnd, unless otherwise stated; VPD = 2.7 to 5.5 V, TA = -40 to 85C) Symbol Guaranteed Limit Unit Maximum Low-Level Input Voltage (Din, CLK, ENB) VIL 0.3 x VDD V Minimum High-Level Input Voltage (Din, CLK, ENB) VIH 0.7 x VDD V Test Condition Parameter Minimum Hysteresis Voltage (CLK, ENB) VDD = 2.7 V VDD = 4.5 V VHys 100 250 mV Maximum Low-Level Output Voltage (REFout, Output A) Iout = 20 A, Device in Reference Mode VOL 0.1 V Minimum High-Level Output Voltage (REFout, Output A) Iout = - 20 A, Device in Reference Mode VOH VDD - 0.1 V Minimum Low-Level Output Current (REFout, LD) Vout = 0.3 V IOL 0.36 mA Minimum Low-Level Output Current (R, V) Vout = 0.3 V IOL 0.36 mA Minimum Low-Level Output Current (Output A) Vout = 0.4 V VDD = 4.5 V IOL 1.0 mA Minimum Low-Level Output Current (Output B) Vout = 0.4 V IOL 1.0 mA Minimum High-Level Output Current (REFout, LD) Vout = VDD - 0.3 V IOH -0.36 mA Minimum High-Level Output Current (R, V) Vout = VPD - 0.3 V IOH -0.36 mA Minimum High-Level Output Current (Output A Only) Vout = VDD - 0.4 V VDD = 4.5 V IOH -0.6 mA (continued) MC145202-1 4.2-148 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145202-1 ELECTRICAL CHARACTERISTICS (continued) Test Condition Parameter Symbol Guaranteed Limit Unit Maximum Input Leakage Current (Din, CLK, ENB, REFin) Vin = VDD or Gnd, Device in XTAL Mode Iin 1.0 A Maximum Input Current (REFin) Vin = VDD or Gnd, Device in Reference Mode Iin 100 A Maximum Output Leakage Current (PDout) Vout = VPD or Gnd, Output in Floating State IOZ 130 nA 1 A (Output B) Vout = VPD or Gnd, Output in High-Impedance State Maximum Standby Supply Current (VDD + VPD Pins) Vin = VDD or Gnd; Outputs Open; Device in Standby Mode, Shut-Down Crystal Mode or REFout-Static-Low Reference Mode; Output B Controlling VCC per Figure 21 ISTBY 30 A Maximum Phase Detector Quiescent Current (VPD Pin) Bit C6 = High Which Selects Phase Detector A, PDout = Open, PDout = Static State, Bit C4 = Low Which is not Standby, IRx = 170 A, VPD = 5.5 V IPD 750 A Bit C6 = Low Which Selects Phase Detector B, R and V = Open, R and V = Static Low or High, Bit C4 = Low Which is not Standby Total Operating Supply Current (VDD + VPD + VCC Pins) fin = 2.0 GHz; REFin = 13 MHz @ 1 Vpp; Output A = Inactive and No Connect; VDD = VCC, REFout, V, R, PDout, LD = No Connect; Din, ENB, CLK = VDD or Gnd, Phase Detector B Selected (Bit C6 = Low) 30 IT [Note] mA NOTE: The nominal values are: 4 mA at VDD = VCC = VPD = 3.0 V; 6 mA at VDD = VCC = VPD = 5.0 V. These are not guaranteed limits. ANALOG CHARACTERISTICS -- CURRENT SOURCE/SINK OUTPUT -- PDout (Iout 1 mA @ VDD = 2.7 V and Iout 1.7mA @ VDD 4.5 V, VDD = VCC = 2.7 to 5.5 V, Voltages Referenced to Gnd) Maximum Source Current Variation (Part-to-Part) Maximum Sink-vs-Source Mismatch [Note 3] VPD Guaranteed Limit Unit 2.7 15 % 4.5 15 5.5 15 2.7 11 4.5 11 5.5 11 Iout Variation 15% 2.7 0.5 to 2.2 Iout Variation 20% 4.5 0.5 to 3.7 Iout Variation 22% 5.5 0.5 to 4.7 Test Condition Parameter Vout = 0.5 x VPD Vout = 0.5 x VPD Output Voltage Range [Note 3] % V NOTES: 1. Percentages calculated using the following formula: (Maximum Value - Minimum Value)/Maximum Value. 2. See Rx Pin Description for external resistor values. 3. This parameter is guaranteed for a given temperature within -40 to 85C. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145202-1 4.2-149 MC145202-1 AC INTERFACE CHARACTERISTICS (VDD = VCC = 2.7 to 5.5 V, TA = - 40 to + 85C, CL = 25 pF, Input tr = tf = 10 ns; VPD = 2.7 to 5.5 V) Figure No. Parameter Serial Data Clock Frequency (Note: Refer to Clock tw below) Symbol Guaranteed Limit Unit 1 fclk dc to 4.0 MHz Maximum Propagation Delay, CLK to Output A (Selected as Data Out) 1, 5 tPLH, tPHL 100 ns Maximum Propagation Delay, ENB to Output A (Selected as Port) 2, 5 tPLH, tPHL 150 ns Maximum Propagation Delay, ENB to Output B 2, 6 tPZL, tPLZ 150 ns 1, 5, 6 tTLH, tTHL 50 ns Cin 10 pF Maximum Output Transition Time, Output A and Output B; tTHLonly, on Output B Maximum Input Capacitance - Din, ENB, CLK TIMING REQUIREMENTS (VDD = VCC = 2.7 to 5.5 V, TA = - 40 to + 85C, Input tr = tf = 10 ns, unless otherwise indicated) Figure No. Symbol Guaranteed Limit Unit Minimum Setup and Hold Times, Din vs CLK 3 tsu, th 50 ns Minimum Setup, Hold and Recovery Times, ENB vs CLK 4 tsu, th, trec 100 ns Minimum Pulse Width, ENB 4 tw [Note] cycles Minimum Pulse Width, CLK 1 tw 125 ns Maximum Input Rise and Fall Times, CLK 1 tr, tf 100 s Parameter NOTE: The minimum limit is 3 REFin cycles or 195 fin cycles, whichever is greater. MC145202-1 4.2-150 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145202-1 SWITCHING WAVEFORMS Figure 1. tf Figure 2. tr VDD 90% CLK 50% 10% ENB Gnd Gnd tw tPLH tw Output A 1/fclk tPLH Output A (Data Out) VDD 50% 50% tPHL tPLZ 90% 50% 10% Output B tTLH tPHL tPZL 50% 10% tTHL Figure 3. Figure 4. tw tw VDD Valid ENB 50% VDD Din 50% Gnd tsu th trec VDD th VDD CLK 50% CLK Gnd tsu Gnd 50% First CLK Last CLK Figure 5. Gnd Figure 6. +VPD Test Point Test Point 7.5 k Device Under Test CL * * Includes all probe and fixture capacitance. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Device Under Test CL * * Includes all probe and fixture capacitance. MC145202-1 4.2-151 MC145202-1 LOOP SPECIFICATIONS (VDD = VCC = 2.7 to 5.5 V unless otherwise indicated, TA = -40 to 85C) Parameter Test Condition Guaranteed Operating Range Fig. No. Symbol Min Max Unit Input Sensitivity Range, fin 500 MHz fin 2000 MHz 7 Pin - 10 4 dBm* Input Frequency, REFin Externally Driven in Reference Mode Vin 400 mVpp 8 fref 1.5 1.5 20 30 MHz Crystal Frequency, Crystal Mode C1 30 pF, C2 30 pF, Includes Stray Capacitance 9 fXTAL 2 15 MHz Output Frequency, REFout CL = 20 pF, Vout 1 Vpp 10, 12 fout dc 10 MHz f dc 2 MHz 40 18 14 120 60 50 ns tTLH, tTHL -- 80 ns Cin -- 7 pF 2.7 VDD < 4.5 V 4.5 VDD 5.5 V Operating Frequency of the Phase Detectors Output Pulse Width (R, V, and LD) Output Transition Times (LD, V, and R) fR in Phase with fV, CL = 20 pF, R and V active for LD measurement, ** VPD = 2.7 to 5.5 V VDD = 2.7 V VDD = 4.5 V VDD = 5.5 V 11, 12 CL = 20 pF, VPD = 2.7 V, VDD = VCC = 2.7 V 11, 12 tw Input Capacitance, REFin * Power level at the input to the dc block. ** When PDout is active, LD minimum pulse width is approximately 5 ns. Figure 7. Test Circuit Sine Wave Generator DC Block 50 PAD fin 50 fin Figure 8. Test Circuit -- Reference Mode Test Point Output A (fV) Device Under Test 0.01 F Sine Wave Generator REFin 50 Device Under Test Vin VCC Gnd VDD VCC V+ Test Point Output A (fR) Test Point REFout Gnd VDD V+ NOTE: Alternately, the 50 pad may be a T network. Figure 9. Test Circuit -- Crystal Mode REFin C1 C2 1 / f REFout Test Point Output A Device Under Test Figure 10. Switching Waveform REFout (fR) 50% REFout VCC Gnd VDD V+ Figure 12. Test Circuit Test Point Device Under Test Figure 11. Switching Waveform tw Output 50% MC145202-1 4.2-152 90% 10% tTHL tTLH CL * * Includes all probe and fixture capacitance. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145202-1 Figure 13. Normalized Input Impedance at fin -- Series Format (R + jx) fin (PIN 11) SOG PACKAGE 4 4 1 3 1 3 2 2 3V 5V Table 1. Input Impedence at fin -- Series Format (R + jx), VCC = 3 V Marker Frequency (GHz) Resistance () Reactance () Capacitance/ Inductance 1 0.5 11.4 -168 1.9 pF 2 1 12.4 -59.4 2.68 pF 3 1.5 19.8 -34.9 3.04 pF 4 2 18.1 9.43 751 pH Table 2. Input Impedence at fin -- Series Format (R + jx), VCC = 5 V Marker Frequency (GHz) Resistance () Reactance () Capacitance/ Inductance 1 0.5 11.8 -175 1.82 pF 2 1 11.5 -64.4 2.47 pF 3 1.5 22.2 -36.5 2.91 pF 4 2 18.4 1.14 90.4 pH MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145202-1 4.2-153 MC145202-1 PIN DESCRIPTIONS CLK Serial Data Clock Input (Pin 18) DIGITAL INTERFACE PINS Din Serial Data Input (Pin 19) The bit stream begins with the most significant bit (MSB) and is shifted in on the low-to-high transition of CLK. The bit pattern is 1 byte (8 bits) long to access the C or configuration register, 2 bytes (16 bits) to access the first buffer of the R register, or 3 bytes (24 bits) to access the A register (see Table 3). The values in the C, R, and A registers do not change during shifting because the transfer of data to the registers is controlled by ENB. CAUTION The value programmed for the N counter must be greater than or equal to the value of the A counter. The 13 least significant bits (LSBs) of the R register are double-buffered. As indicated above, data is latched into the first buffer on a 16-bit transfer. (The 3 MSBs are not double-buffered and have an immediate effect after a 16-bit transfer.) The second buffer of the R register contains the 13 bits for the R counter. This second buffer is loaded with the contents of the first buffer when the A register is loaded (a 24-bit transfer). This allows presenting new values to the R, A, and N counters simultaneously. If this is not required, then the 16-bit transfer may be followed by pulsing ENB low with no signal on the CLK pin. This is an alternate method of transferring data to the second buffer of the R register (see Figure 16). The bit stream needs neither address nor steering bits due to the innovative BitGrabber Plus registers. Therefore, all bits in the stream are available to be data for the three registers. Random access of any register is provided (i.e., the registers may be accessed in any sequence). Data is retained in the registers over a supply range of 2.7 to 5.5 V. The formats are shown in Figures 14, 15, and 16. Din typically switches near 50% of VDD to maximize noise immunity. This input can be directly interfaced to CMOS devices with outputs guaranteed to switch near rail-to-rail. When interfacing to NMOS or TTL devices, either a level shifter (MC74HC14A, MC14504B) or pull-up resistor of 1 k to 10 k must be used. Parameters to consider when sizing the resistor are worst-case IOL of the driving device, maximum tolerable power consumption, and maximum data rate. Table 3. Register Access (MSBs are shifted in first; C0, R0, and A0 are the LSBs) Number of Clocks Accessed Register Bit Nomenclature 8 16 24 Other Values 32 Values > 32 C Register R Register A Register Not Allowed See Figures 22 - 25 C7, C6, C5, . . ., C0 R15, R14, R13, . . ., R0 A23, A22, A21, . . ., A0 MC145202-1 4.2-154 Low-to-high transitions on CLK shift bits available at the Din pin, while high-to-low transitions shift bits from Output A (when configured as Data Out, see Pin 16). The 24-1/2-stage shift register is static, allowing clock rates down to dc in a continuous or intermittent mode. Eight clock cycles are required to access the C register. Sixteen clock cycles are needed for the first buffer of the R register. Twenty-four cycles are used to access the A register. See Table 3 and Figures 14, 15, and 16. The number of clocks required for cascaded devices is shown in Figures 23 through 25. CLK typically switches near 50% of VDD and has a Schmitt-triggered input buffer. Slow CLK rise and fall times are allowed. See the last paragraph of Din for more information. NOTE To guarantee proper operation of the power-on reset (POR) circuit, the CLK pin must be held at Gnd (with ENB being a don't care) or ENB must be held at the potential of the V+ pin (with CLK being a don't care) during power-up. Floating, toggling, or having these pins in the wrong state during power-up does not harm the chip, but causes two potentially undesirable effects. First, the outputs of the device power up in an unknown state. Second, if two devices are cascaded, the A Registers must be written twice after power up. After these two accesses, the two cascaded chips perform normally. ENB Active Low Enable Input (Pin 17) This pin is used to activate the serial interface to allow the transfer of data to/from the device. When ENB is in an inactive high state, shifting is inhibited and the port is held in the initialized state. To transfer data to the device, ENB (which must start inactive high) is taken low, a serial transfer is made via Din and CLK, and ENB is taken back high. The low-to-high transition on ENB transfers data to the C or A registers and first buffer of the R register, depending on the data stream length per Table 3. Transitions on ENB must not be attempted while CLK is high. This puts the device out of synchronization with the microcontroller. Resynchronization occurs when ENB is high and CLK is low. This input is also Schmitt-triggered and switches near 50% of VDD, thereby minimizing the chance of loading erroneous data into the registers. See the last paragraph of Din for more information. For POR information, see the note for the CLK pin. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145202-1 Output A Configurable Digital Output (Pin 16) Output A is selectable as fR, fV, Data Out, or Port. Bits A22 and A23 in the A register control the selection; see Figure 15. If A23 = A22 = high, Output A is configured as fR. This signal is the buffered output of the 13-stage R counter. The fR signal appears as normally low and pulses high. The fR signal can be used to verify the divide ratio of the R counter. This ratio extends from 5 to 8191 and is determined by the binary value loaded into bits R0-R12 in the R register. Also, direct access to the phase detectors via the REFin pin is allowed by choosing a divide value of 1 (see Figure 16). The maximum frequency at which the phase detectors operate is 2 MHz. Therefore, the frequency of fR should not exceed 2 MHz. If A23 = high and A22 = low, Output A is configured as fV. This signal is the buffered output of the 12-stage N counter. The fV signal appears as normally low and pulses high. The fV signal can be used to verify the operation of the prescaler, A counter, and N counter. The divide ratio between the fin input and the fV signal is N x 64 + A. N is the divide ratio of the N counter and A is the divide ratio of the A counter. These ratios are determined by bits loaded into the A register. See Figure 15. The maximum frequency at which the phase detectors operate is 2 MHz. Therefore, the frequency of fV should not exceed 2 MHz. If A23 = low and A22 = high, Output A is configured as Data Out. This signal is the serial output of the 24-1/2-stage shift register. The bit stream is shifted out on the high-to-low transition of the CLK input. Upon power up, Output A is automatically configured as Data Out to facilitate cascading devices. If A23 = A22 = low, Output A is configured as Port. This signal is a general-purpose digital output which may be used as an MCU port expander. This signal is low when the Port bit (C1) of the C register is low, and high when the Port bit is high. Output B Open-Drain Digital Output (Pin 15) This signal is a general-purpose digital output which may be used as an MCU port expander. This signal is low when the Out B bit (C0) of the C register is low. When the Out B bit is high, Output B assumes the high-impedance state. Output B may be pulled up through an external resistor or active circuitry to any voltage less than or equal to the potential of the VPD pin. Note: the maximum voltage allowed on the VPD pin is 5.5 V. Upon power-up, power-on reset circuitry forces Output B to a low level. REFERENCE PINS REFin and REFout Reference Input and Reference Output (Pins 20 and 1) Configurable pins for a Crystal or an External Reference. This pair of pins can be configured in one of two modes: the crystal mode or the reference mode. Bits R13, R14, and R15 in the R register control the modes as shown in Figure 16. In crystal mode, these pins form a reference oscillator when connected to terminals of an external parallel-resonant crystal. Frequency-setting capacitors of appropriate values, as recommended by the crystal supplier, are connected from each of the two pins to ground (up to a maximum of 30 pF each, including stray capacitance). An external resistor of 1 M to 15 M is connected directly across the pins to ensure linear operation of the amplifier. The required connections for the components are shown in Figure 9. To turn on the oscillator, bits R15, R14, and R13 must have an octal value of one (001 in binary, respectively). This is the active-crystal mode shown in Figure 16. In this mode, the crystal oscillator runs and the R Counter divides the crystal frequency, unless the part is in standby. If the part is placed in standby via the C register, the oscillator runs, but the R counter is stopped. However, if bits R15 to R13 have a value of 0, the oscillator is stopped, which saves additional power. This is the shut-down crystal mode (shown in Figure 16) and can be engaged whether in standby or not. In the reference mode, REFin (Pin 20) accepts a signal from an external reference oscillator, such as a TCXO. A signal swinging from at least the VIL to VIH levels listed in the Electrical Characteristics table may be directly coupled to the pin. If the signal is less than this level, ac coupling must be used as shown in Figure 8. Due to an on-board resistor which is engaged in the reference modes, an external biasing resistor tied between REFin and REFout is not required. With the reference mode, the REFout pin is configured as the output of a divider. As an example, if bits R15, R14, and R13 have an octal value of seven, the frequency at REFout is the REFin frequency divided by 16. In addition, Figure 16 shows how to obtain ratios of eight, four, and two. A ratio of one-to-one can be obtained with an octal value of three. Upon power up, a ratio of eight is automatically initialized. The maximum frequency capability of the REFout pin is listed in the Loop Specifications table for an output swing of 1 Vpp and 20 pF loads. Therefore, for higher REFin frequencies, the one-to-one ratio may not be used for this magnitude of signal swing and loading requirements. Likewise, for REFin frequencies above two times the highest rated frequency, the ratio must be more than two. The output has a special on-board driver that has slew-rate control. This feature minimizes interference in the application. If REFout is unused, an octal value of two should be used for R15, R14, and R13 and the REFout pin should be floated. A value of two allows REFin to be functional while disabling REFout, which minimizes dynamic power consumption. LOOP PINS fin and fin Frequency Inputs (Pins 11 and 10) These pins are frequency inputs from the VCO. These pins feed the on-board RF amplifier which drives the 64/65 prescaler. These inputs may be fed differentially. However, they are usually used in a single-ended configuration (shown in Figure 7). Note that fin is driven while fin must be tied to ground via a capacitor. Motorola does not recommend driving fin while terminating fin because this configuration is not tested for sensitivity. The sensitivity is dependent on the frequency as shown in the Loop Specifications table. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145202-1 4.2-155 MC145202-1 PDout Single-Ended Phase/Frequency Detector Output (Pin 6) This is a three-state current-source/sink output for use as a loop error signal when combined with an external low-pass filter. The phase/frequency detector is characterized by a linear transfer function. The operation of the phase/frequency detector is described below and is shown in Figure 17. POL bit (C7) in the C register = low (see Figure 14) Frequency of f V > f R or Phase of f V Leading f R : current-sinking pulses from a floating state Frequency of f V < f R or Phase of f V Lagging f R : current-sourcing pulses from a floating state Frequency and Phase of fV = fR: essentially a floating state; voltage at pin determined by loop filter POL bit (C7) = high Frequency of f V > f R or Phase of f V Leading f R : current-sourcing pulses from a floating state Frequency of f V < f R or Phase of f V Lagging f R : current-sinking pulses from a floating state Frequency and Phase of fV = fR: essentially a floating state; voltage at pin determined by loop filter This output can be enabled, disabled, and inverted via the C register. If desired, PD out can be forced to the high-impedance state by utilization of the disable feature in the C register (bit C6). This is a patented feature. Similarly, PDout is forced to the high-impedance state when the device is put into standby (STBY bit C4 = high). The PDout circuit is powered by VPD. The phase detector gain is controllable by bits C3, C2, and C1: gain (in amps per radian) = PDout current divided by 2. R and V (Pins 3 and 4) Double-Ended Phase/Frequency Detector Outputs These outputs can be combined externally to generate a loop error signal. Through use of a Motorola patented technique, the detector's dead zone has been eliminated. Therefore, the phase/frequency detector is characterized by a linear t r ans fe r fu n c ti o n . T h e o p e ra ti on of the phase/frequency detector is described below and is shown in Figure 17. POL bit (C7) in the C register = low (see Figure 14) Frequency of fV > fR or Phase of fV Leading fR: V = negative pulses, R = essentially high Frequency of fV < fR or Phase of fV Lagging fR: V = essentially high, R = negative pulses Frequency and Phase of f V = f R : V and R remain essentially high, except for a small minimum time period when both pulse low in phase POL bit (C7) = high Frequency of fV > fR or Phase of fV Leading fR: R = negative pulses, V = essentially high Frequency of fV < fR or Phase of fV Lagging fR: R = essentially high, V = negative pulses Frequency and Phase of f V = f R : V and R remain essentially high, except for a small minimum time period when both pulse low in phase These outputs can be enabled, disabled, and interchanged via C register bits C6 or C4. This is a patented MC145202-1 4.2-156 feature. Note that when disabled or in standby, R and V are forced to their rest condition (high state). The R and V output signal swing is approximately from Gnd to VPD. LD Lock Detector Output (Pin 2) This output is essentially at a high level with narrow low-going pulses when the loop is locked (fR and fV of the same phase and frequency). The output pulses low when fV and fR are out of phase or different frequencies. LD is the logical ANDing of R and V (see Figure 17). This output can be enabled and disabled via the C register. This is a patented feature. Upon power up, on-chip initialization circuitry disables LD to a static low logic level to prevent a false "lock" signal. If unused, LD should be disabled and left open. The LD output signal swing is approximately from Gnd to VDD. Rx External Resistor (Pin 8) A resistor tied between this pin and Gnd, in conjunction with bits in the C register, determines the amount of current that the PDout pin sinks and sources. When bits C2 and C3 are both set high, the maximum current is obtained at PDout; see Tables 4 and 5 for other current values. The recommended value for Rx is 3.9 k (preliminary) . A value of 3.9 k provides current at the PDout pin of approximately 1 mA @ VDD = 3 V and approximately 1.7 mA @ VDD = 5 V in the 100% current mode. Note that VDD, not VPD, is a factor in determining the current. When the R and V outputs are used, the Rx pin may be floated. Table 4. PDout Current*, C1 = Low with Output A not Selected as "Port"; Also, Default Mode When Output A Selected as "Port" Bit C3 Bit C2 PDout Current* 0 0 1 1 0 1 0 1 70% 80% 90% 100% * At the time the data sheet was printed, only the 100% current mode was guaranteed. The reduced current modes were for experimentation only. Table 5. PDout Current*, C1 = High with Output A not Selected as "Port" Bit C3 Bit C2 PDout Current* 0 0 1 1 0 1 0 1 25% 50% 75% 100% * At the time the data sheet was printed, only the 100% current mode was guaranteed. The reduced current modes were for experimentation only. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145202-1 TEST POINT PINS Test 1 Modulus Control Signal (Pin 9) This pin may be used in conjunction with the Test 2 pin for access to the on-board 64/65 prescaler. When Test 1 is low, the prescaler divides by 65. When high, the prescaler divides by 64. CAUTION This pin is an unbuffered output and must be floated in an actual application. This pin must be attached to an isolated pad with no trace. Test 2 Prescaler Output (Pin 13) This pin may be used to access the on-board 64/65 prescaler output. CAUTION This pin is an unbuffered output and must be floated in an actual application. This pin must be attached to an isolated pad with no trace. POWER SUPPLY PINS VDD Positive Power Supply (Pin 14) This pin supplies power to the main CMOS digital portion of the device. Also, this pin, in conjunction with the Rx resistor, determines the internal reference current for the PDout pin. The voltage range is 2.7 to 5.5 V with respect to the Gnd pin. For optimum performance, VDD should be bypassed to Gnd using a low-inductance capacitor mounted very close to these pins. Lead lengths on the capacitor should be minimized. VCC Positive Power Supply (Pin 12) This pin supplies power to the RF amp and 64/65 prescaler. The voltage range is 2.7 to 5.5 V with respect to the Gnd pin. In standby mode, the VCC pin still draws a few milliamps from the power supply. This current drain can be eliminated with the use of transistor Q1 as shown in Figure 21. For optimum performance, VCC should be bypassed to Gnd using a low-inductance capacitor mounted very close to these pins. Lead lengths on the capacitor should be minimized. VPD Positive Power Supply (Pin 5) This pin supplies power to both phase/frequency detectors A and B. The voltage applied on this pin may be more or less than the potential applied to the VDD and VCC pins. The voltage range for VPD is 2.7 to 5.5 V with respect to the Gnd pin. For optimum performance, VPD should be bypassed to Gnd using a low-inductance capacitor mounted very close to these pins. Lead lengths on the capacitor should be minimized. Gnd Ground (Pin 7) Common ground. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145202-1 4.2-157 MC145202-1 Figure 14. C Register Access and Format (8 Clock Cycles are Used) ENB NOTE 1 CLK 2 3 4 5 6 7 MSB Din C7 8 LSB C6 C5 C4 C3 C2 C1 C0 NOTE: At this point, the new byte is transferred to the C register and stored. No other registers are affected. C7 - POL: Selects the output polarity of the phase/frequency detectors. When set high, this bit inverts PDout and interchanges the R function with V as depicted in Figure 17. Also see the phase detector output pin descriptions for more information. This bit is cleared low at power up. C6 - PDA/B: Selects which phase/frequency detector is to be used. When set high, enables the output of phase/frequency detector A (PDout) and disables phase/frequency detector B by forcing R and V to the static high state. When cleared low, phase/frequency detector B is enabled (R and V) and phase/frequency detector A is disabled with PDout forced to the high-impedance state. This bit is cleared low at power up. C5 - LDE: Enables the lock detector output when set high. When the bit is cleared low, the LD output is forced to a static low level. This bit is cleared low at power up. C4 - STBY: When set, places the CMOS section of device, which is powered by the VDD and VPD pins, in the standby mode for reduced power consumption: PDout is forced to the high-impedance state, R and V are forced high, the A, N, and R counters are inhibited from counting, and the Rx current is shut off. In standby, the state of LD is determined by bit C5. C5 low forces LD low (no change). C5 high forces LD static high. During standby, data is retained in the A, R, and C registers. The condition of REF/OSC circuitry is determined by the control bits in the R register: R13, R14, and R15. However, if REFout = static low is selected, the internal feedback resistor is disconnected and the input is inhibited when in standby; in addition, the REFin input only presents a capacitive load. NOTE: Standby does not affect the other modes of the REF/OSC circuitry. When C4 is reset low, the part is taken out of standby in two steps. First, the REFin (only in one mode) resistor is reconnected, all counters are enabled, and the Rx current is enabled. Any fR and fV signals are inhibited from toggling the phase/frequency detectors and lock detector. Second, when the first fV pulse occurs, the R counter is jam loaded, and the phase/frequency and lock detectors are initialized. Immediately after the jam load, the A, N, and R counters begin counting down together. At this point, the fR and fV pulses are enabled to the phase and lock detectors. (Patented feature.) C3, C2 - I2, I1: Controls the PDout source/sink current per Tables 4 and 5. With both bits high, the maximum current is available. Also, see C1 bit description. C1 - Port: When the Output A pin is selected as "Port" via bits A22 and A23, C1 determines the state of Output A. When C1 is set high, Output A is forced high; C1 low forces Output A low. When Output A is not selected as "Port," C1 controls whether the PDout step size is 10% or 25%. (See Tables 4 and 5.) When low, steps are 10%. When high, steps are 25%. Default is 10% steps when Output A is selected as "Port." The Port bit is not affected by the standby mode. C0 - Out B: Determines the state of Output B. When C0 is set high, Output B is high-impedance; C0 low forces Output B low. The Out B bit is not affected by the standby mode. This bit is cleared low at power up. MC145202-1 4.2-158 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ENB Note 3 1 CLK 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 LSB CC CC CC C C CC C C CC C C C C C C C C C C C C CC C C CC C C CC C C C C C C C C CC C C CC C C CC C C C C C C C C C C C C C C C C CC MSB 24 D in A23 A22 A21 1 Port Data Out fV fR Binary Value Output A Function (Note 1) 1 Both Bits Must Be High A19 A18 A17 A16 A15 A14 A13 A12 A11 A10 A9 0 0 0 0 0 0 0 0 . . . 0 0 0 0 0 0 0 0 . . . 0 1 2 3 4 5 6 7 . . . F F E N COUNTER = /4094 F F F N COUNTER = /4095 Hexadecimal Value For N Counter Not Allowed Not Allowed Not Allowed Not Allowed Not Allowed N COUNTER = /5 N COUNTER = /6 N COUNTER = /7 A8 A7 A6 A5 A4 A3 A2 A1 0 0 0 0 . . . 0 1 2 3 . . . 3 3 E F 4 4 . . . 0 1 . . . Not Allowed Not Allowed F F Not Allowed A COUNTER A COUNTER A COUNTER A COUNTER A0 = /0 = /1 = /2 = /3 A COUNTER = / 62 A COUNTER = / 63 Hexadecimal Value For A Counter MC145202-1 4.2-159 NOTES: 1. A power-on initialize circuit forces the Output A function to default to Data Out. 2. The values programmed for the N counter must be greater than or equal to the values programmed for the A counter. This results in a total divide value = N x 64 + A. 3. At this point, the three new bytes are transferred to the A register. In addition, the 13 LSBs in the first buffer of the R register are transferred to the R register's second buffer. Thus, the R, N, and A counters can be presented new divide ratios at the same time. The first buffer of the R register is not affected. The C register is not affected. Figure 15. 0 1 0 1 0 0 1 1 A20 MC145202-1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Figure 15. A Register Access and Format (24 Clock Cycles are Used) MC145202-1 Figure 16. R Register Access and Format (16 Clock Cycles are Used) ENB CLK 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 MSB Din R15 16 Note 4 Note 5 LSB R14 R13 R12 R11 R10 0 Crystal Mode, Shut Down 1 Crystal Mode, Active 2 Reference Mode, REFin Enabled and REFout Static Low 3 Reference Mode, REFout = REFin (Buffered) 4 Reference Mode, REFout = REFin/2 5 Reference Mode, REFout = REFin/4 6 Reference Mode, REFout = REFin/8 (Note 3) 7 Reference Mode, REFout = REFin/16 Octal Value R9 0 0 0 0 0 0 0 0 0 * * * 1 1 R8 0 0 0 0 0 0 0 0 0 * * * F F R7 0 0 0 0 0 0 0 0 0 * * * F F 0 1 2 3 4 5 6 7 8 * * * E F R6 R5 R4 R3 R2 R1 R0 Not Allowed R COUNTER = / 1 (Note 6) Not Allowed Not Allowed Not Allowed R COUNTER = / 5 R COUNTER = / 6 R COUNTER = / 7 R COUNTER = / 8 R COUNTER = / 8190 R COUNTER = / 8191 Binary Value Hexadecimal Value NOTES: 1 Bits R15 through R13 control the configurable "OSC or 4-stage divider" block (see Block Diagram). 2 Bits R12 through R0 control the "13-stage R counter" block (see Block Diagram). 3 A power-on initialize circuit forces a default REFin to REFout ratio of eight. 4 At this point, bits R13, R14, and R15 are stored and sent to the "OSC or 4-Stage Divider" block in the Block Diagram. Bits R0 - R12 are loaded into the first buffer in the double-buffered section of the R register. Therefore, the R counter divide ratio is not altered yet and retains the previous ratio loaded. The C and A registers are not affected. 5 Optional load pulse. At this point, bits R0 - R12 are transferred to the second buffer of the R register. The R counter begins dividing by the new ratio after completing the rest of the present count cycle. CLK must be low during the ENB pulse, as shown. The C and A registers are not affected. The first buffer of the R register is not affected. Also, see Note 3 of Figure 15 for an alternate method of loading the second buffer in the R register. 6 Allows direct access to reference input of phase/frequency detectors. MC145202-1 4.2-160 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145202-1 Figure 17. Phase/Frequency Detectors and Lock Detector Output Waveforms fR Reference REFin / R VH VL fV Feedback fin / (N x 64 + A) VH VL * PDout Sourcing Current Float Sinking Current R VH VL V VH VL LD VH VL VH = High voltage level VL = Low voltage level *At this point, when both fR and fV are in phase, the output source and sink circuits are turned on for a short interval. NOTE: The PDout either sources or sinks current during out-of-lock conditions. When locked in phase and frequency, the output is in the floating condition and the voltage at that pin is determined by the low-pass filter capacitor. PDout, R, and V are shown with the polarity bit (POL) = low; see Figure 14 for POL. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145202-1 4.2-161 MC145202-1 DESIGN CONSIDERATIONS Crystal Oscillator Considerations The following options may be considered to provide a reference frequency to Motorola's CMOS frequency synthesizers. Use of a Hybrid Crystal Oscillator Commercially available temperature-compensated crystal oscillators (TCXOs) or crystal-controlled data clock oscillators provide very stable reference frequencies. An oscillator capable of CMOS logic levels at the output may be direct or dc coupled to REFin. If the oscillator does not have CMOS logic levels on the outputs, capacitive or ac coupling to REFin may be used (see Figure 8). For additional information about TCXOs and data clock oscillators, please consult the latest version of the eem Electronic Engineers Master Catalog, the Gold Book, or similar publications. Design an Off-Chip Reference The user may design an off-chip crystal oscillator using discrete transistors or ICs specifically developed for crystal oscillator applications. The reference signal is usually ac coupled to REFin (see Figure 8). For large amplitude signals (standard CMOS logic levels), dc coupling may be used. shift in operating frequency. R1 in Figure 18 limits the drive level. The use of R1 is not necessary in most cases. To verify that the maximum dc supply voltage does not cause the crystal to be overdriven, monitor the output frequency (fR) at Output A as a function of supply voltage. (REFout is not used because loading impacts the oscillator.) The frequency should increase very slightly as the dc supply voltage is increased. An overdriven crystal decreases in frequency or becomes unstable with an increase in supply voltage. The operating supply voltage must be reduced or R1 must be increased in value if the overdriven condition exists. The user should note that the oscillator start-up time is proportional to the value of R1. Through the process of supplying crystals for use with CMOS inverters, many crystal manufacturers have developed expertise in CMOS oscillator design with crystals. Discussions with such manufacturers can prove very helpful (see Table 2). Figure 18. Pierce Crystal Oscillator Circuit Frequency Synthesizer Use of the On-Chip Oscillator Circuitry The on-chip amplifier (a digital inverter) along with an appropriate crystal may be used to provide a reference source frequency. A fundamental mode crystal, parallel resonant at the desired operating frequency, should be connected as shown in Figure 18. The crystal should be specified for a loading capacitance (CL ) which does not exceed approximately 20 pF when used at the highest operating frequencies listed in the Loop Specifications table. Assuming R1 = 0 , the shunt load capacitance (CL ) presented across the crystal can be estimated to be: REFout Rf R1* C1 C2 * May be needed in certain cases. See text. Figure 19. Parasitic Capacitances of the Amplifier and Cstray CL = CinCout + Ca + Cstray + C1 * C2 C1 + C2 Cin + Cout Ca REFin where Cin = 5 pF (see Figure 19) Cout = 6 pF (see Figure 19) Ca = 1 pF (see Figure 19) C1 and C2 = external capacitors (see Figure 18) Cstray = the total equivalent external circuit stray capacitance appearing across the crystal terminals The oscillator can be "trimmed" on-frequency by making a portion or all of C1 variable. The crystal and associated components must be located as close as possible to the REFin and REFout pins to minimize distortion, stray capacitance, stray inductance, and startup stabilization time. Circuit stray capacitance can also be handled by adding the appropriate stray value to the values for Cin and Cout. For this approach, the term Cstray becomes 0 in the above expression for CL. Power is dissipated in the effective series resistance of the crystal, Re, in Figure 20. The maximum drive level specified by the crystal manufacturer represents the maximum stress that the crystal can withstand without damage or excessive MC145202-1 4.2-162 REFin REFout Cin Cout Cstray Figure 20. Equivalent Crystal Networks RS 1 2 CS LS 1 2 CO 1 Re Xe 2 NOTE: Values are supplied by crystal manufacturer (parallel resonant crystal). MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145202-1 RECOMMENDED READING Technical Note TN-24, Statek Corp. Technical Note TN-7, Statek Corp. E. Hafner, "The Piezoelectric Crystal Unit-Definitions and Method of Measurement", Proc. IEEE, Vol. 57, No. 2, Feb. 1969. D. Kemper, L. Rosine, "Quartz Crystals for Frequency Control", Electro-Technology, June 1969. P. J. Ottowitz, "A Guide to Crystal Selection", Electronic Design, May 1966. D. Babin, "Designing Crystal Oscillators", Machine Design, March 7, 1985. D. Babin, "Guidelines for Crystal Oscillator Design", Machine Design, April 25, 1985. Table 6. Partial List of Crystal Manufacturers CTS Corp. United States Crystal Corp. Crystek Crystal Statek Corp. Fox Electronics NOTE: Motorola cannot recommend one supplier over another and in no way suggests that this is a complete listing of crystal manufacturers. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145202-1 4.2-163 MC145202-1 PHASE-LOCKED LOOP -- LOW-PASS FILTER DESIGN (A) PDout K KVCO NC n = VCO R = C K KVCOC N R 2 = nRC 2 1 + sRC Z(s) = sC NOTE: For (A), using K in amps per radian with the filter's impedance transfer function, Z(s), maintains units of volts per radian for the detector/filter combination. Additional sideband filtering can be accomplished by adding a capacitor C across R. The corner c = 1/RC should be chosen such that n is not significantly affected. R2 (B) R R1 - V + R1 n = C A VCO = K KVCO NCR1 nR2C 2 R2 Assuming Gain A is very large, then: C F(s) = R2sC + 1 R1sC NOTE: For (B), R1 is frequently split into two series resistors; each resistor is equal to R1 divided by 2. A capacitor CC is then placed from the midpoint to ground to further filter the error pulses. The value of CC should be such that the corner frequency of this network does not significantly affect n. DEFINITIONS: N = Total Division Ratio in Feedback Loop K (Phase Detector Gain) = IPDout / 2 amps per radian for PDout K (Phase Detector Gain) = VPD / 2 volts per radian for V and R 2fVCO radians per volt KVCO (VCO Transfer Function) = VVCO For a nominal design starting point, the user might consider a damping factor 0.7 and a natural loop frequency n (2fR / 50) where fR is the frequency at the phase detector input. Larger n values result in faster loop lock times and, for similar sideband filtering, higher fR-related VCO sidebands. Either loop filter (A) or (B) is frequently followed by additional sideband filtering to further attenuate fR-related VCO sidebands. This additional filtering may be active or passive. RECOMMENDED READING: Gardner, Floyd M., Phaselock Techniques (second edition). New York, Wiley-Interscience, 1979. Manassewitsch, Vadim, Frequency Synthesizers: Theory and Design (second edition). New York, Wiley-Interscience, 1980. Blanchard, Alain, Phase-Locked Loops: Application to Coherent Receiver Design. New York, Wiley-Interscience, 1976. Egan, William F., Frequency Synthesis by Phase Lock. New York, Wiley-Interscience, 1981. Rohde, Ulrich L., Digital PLL Frequency Synthesizers Theory and Design. Englewood Cliffs, NJ, Prentice-Hall, 1983. Berlin, Howard M., Design of Phase-Locked Loop Circuits, with Experiments. Indianapolis, Howard W. Sams and Co., 1978. Kinley, Harold, The PLL Synthesizer Cookbook. Blue Ridge Summit, PA, Tab Books, 1980. Seidman, Arthur H., Integrated Circuits Applications Handbook, Chapter 17, pp. 538-586. New York, John Wiley & Sons. Fadrhons, Jan, "Design and Analyze PLLs on a Programmable Calculator," EDN. March 5, 1980. AN535, Phase-Locked Loop Design Fundamentals, Motorola Semiconductor Products, Inc., 1970. AR254, Phase-Locked Loop Design Articles, Motorola Semiconductor Products, Inc., Reprinted with permission from Electronic Design, 1987. AN1253, An Improved PLL Design Method Without n and , Motorola Semiconductor Products, Inc., 1995. MC145202-1 4.2-164 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145202-1 Figure 21. Example Application Threshold Detector +3 V 1 REF out REFin 3 R Din 19 18 CLK 4 V ENB 2 LD Integrator 5 +3V 6 Low-pass Filter 7 8 NC 20 9 VPD Output A PDout Output B Gnd VDD Rx Test 2 VCC Test 1 10 MCU 17 16 General-purpose Digital Output 15 +3 V 14 13 NC Q1 Note 2 12 fin 11 fin 1000 pF UHF VCO UHF Output Buffer NOTES: 1 When used, the R and V outputs are fed to an external combiner/loop filter. See the Phase- Locked Loop -- Low-Pass Filter Design (Page 4.2-142) for additional information. 2 Transistor Q1 is required only if the standby feature is needed. Q1 permits the bipolar section of the device to be shut down via use of the general-purpose digital pin, Output B. If the standby feature is not needed, tie Pin 12 directly to the power supply. 3 For optimum performance, bypass the VCC, VDD, and VPD pins to Gnd with low-inductance capacitors. 4 The R counter is programmed for a divide value = REFin / fR. Typically, fR is the tuning resolution required for the VCO. Also, the VCO frequency divided by fR = NT = N x 64 + A; this determines the values (N, A) that must be programmed into the N and A counters, respectively. Figure 22. Cascading Two Devices Device #2 (MC145193 or MC145202-1) Device #1 (MC145193 or MC145202-1) Din CLK ENB Output A (Data Out) Din CLK ENB Output A (Data Out) CMOS MCU Optional NOTE: See related Figures 23, 24, and 25. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145202-1 4.2-165 MC145202-1 4.2-166 Figure 23. Accessing the C Registers of Two Cascaded MC145193 or MC145202-1 Devices ENB * 1 2 7 8 9 10 15 16 17 18 23 24 25 26 31 32 Figure 23. C C C C C C C C C C CC CC C C C C C C C CCC C CC CC C CCC C C C C C C C CC CC C CCC CCC C C C C C C C C C CCC C C C C C C C C C CCC CLK D in C7 C6 C0 X X X X X X C7 C Register Bits of Device #2 in Figure 22 C6 C0 C Register Bits of Device #1 in Figure 22 *At this point, the new bytes are transferred to the C registers of both devices and stored. No other registers are affected. MC145202-1 ENB * 1 2 7 8 9 15 16 17 23 24 25 31 32 38 39 40 47 48 C C C C C C C CC C C C C C CC CC CC C C C C CC C C C C C C CC C C CC CC C C CC CC C C C C CC CC CLK Figure 24. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Figure 24. Accessing the A Registers of Two Cascaded MC145193 or MC145202-1 Devices Din A23 A22 A16 A15 A8 A Register bits of Device #2 in Figure 22 A7 A0 A23 A16 A9 A8 A Register Bits of Device #1 in Figure 22 * At this point, the new bytes are transferred to the A registers of both devices and stored. Additionally, for both devices, the 13 LSBs in each of the first buffers of the R registers are transferred to the respective R register's second buffer. Thus, the R, N, and A counter can be presented new divide ratios at the same time. The first buffer of each R register is not affected. Neither C register is affected. A0 ENB Note 1 Note 2 2 R15 R14 8 9 15 16 17 23 24 25 31 32 33 39 40 R8 R7 R Register Bits of Device #2 in Figure 22 R0 X X R15 R8 R7 R0 R Register Bits of Device #1 in Figure 22 Notes Applicable to Each Device: 1. At this point, bits R13, R14 and R15 are stored and sent to the ``OSC or 4-Stage Divider" block in the Block Diagram. Bits R0 through R12 are loaded into the first buffer in the double-buffered section of the R register. Therfore, the R counter divide is not altered yet and retains the previous ratio loaded. The C and A registers are not affected. 2. Optional load pulse. At this point, the bits R0 through R12 are transfered to the second buffer of the R register. The R counter begins dividing by the new ratio after completing the rest of the present count cycle. CLK must be low during the ENB pulse, as shown. The C and A registers are not affected. The first buffer of the R register is not affected. Also, see note of Figure 24 for an alternate method of loading the second buffer in the R register. MC145202-1 Din 7 C C C C C C C C C CCC CCC C C C CCC CCC CCC C C C C C C CCC C C C C C C C C C CCC C C C C C C C C C C C C C C C CCC CCC 1 C C C CCC C CC CC C CLK Figure 25. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Figure 25. Accessing the R Registers of Two Cascaded MC145193 or MC145202-1 Devices MC145202-1 4.2-167 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC145220 Dual 1.1 GHz PLL Frequency Synthesizer BiCMOS F SUFFIX SOG PACKAGE CASE 803C 20 The MC145220 is a low-voltage, single-chip frequency synthesizer with serial interface capable of direct usage up to 1.1 GHz. The device simultaneously supports two loops. The two on-chip dual-modulus prescalers may be independently programmed to divide by either 32/33 or 64/65. The device consists of two dual-modulus prescalers, two 6-stage A counters, two 12-stage N counters, two fully programmable 13-stage R (reference) counters, and two lock detectors. Four phase/frequency detectors are included: two with current source/sink outputs and two with double-ended outputs. The counters are programmed via a synchronous serial port which is SPI compatible. The serial port is byte-oriented to facilitate control via an MCU. Due to the innovative BitGrabber Plus registers, the MC145220 may be cascaded with other peripherals featuring BitGrabber Plus without requiring leading dummy bits or multiple address bits in the serial data stream. In addition, BitGrabber Plus peripherals may be cascaded with existing BitGrabber peripherals. Because this device is a dual synthesizer, a single steering bit is used in the serial data stream to direct the data to either side of the chip. The phase/frequency detectors have linear transfer functions (no dead zones). The current delivered by the current source/sink outputs is controllable via the serial port. Also featured are low-power standby for either one or both loops and on-board support of an external crystal. In addition, the part may be configured such that the REF in pin accepts an external reference signal. In this configuration, the REF out pin may be programmed to output the REF in frequency divided by 1, 2, 4, 8, or 16. * Operating Frequency: 40 to 1100 MHz * Operating Supply Voltage Range: 2.7 to 5.5 V * Supply Current: Both PLLs Operating -- 12 mA Nominal One PLL Operating, One on Standby -- 6.5 mA Nominal Both PLLs on Standby -- 30 A Maximum * Phase Detector Output Current: Up to 2 mA @ 5 V Up to 1 mA @ 3 V * Operating Temperature Range: - 40 to 85C * Independent R Counters Allow Use of Different Step Sizes for Each Loop * Double-Buffered R Register -- Reference and Loop Divide Ratios Updated Simultaneously * R Counter Division Range: 1 and 10 to 8,191 * Dual-Modulus Capability Provides Total Division of the VCO Frequency up to 262,143 * Direct Interface to Motorola SPI Data Port * Evaluation Kit Available (Part Number MC145220EVK) * See Application Note AN1253/D for Low-Pass Filter Design, and AN1277/D for Offset Reference PLLs for Fine Resolution or Fast Hopping 1 DT SUFFIX TSSOP CASE 948D 20 1 ORDERING INFORMATION MC145220F MC145220DT SOG Package TSSOP PIN ASSIGNMENT REFin 1 20 Din REFout 2 19 CLK LD 3 18 LD PDout /R 4 17 PDout /R Rx /V 5 16 Rx /V GND 6 15 GND fin 7 14 fin fin 8 13 fin V+ 9 12 V+ 10 11 ENB OUTPUT A REV 4 1/98 TN98012300 MC145220 4.2-168 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA BLOCK DIAGRAM 32/33 OR 64/65 PRESCALER fin 8 7 fin fV A AND N COUNTERS 3 PHASE/ FREQUENCY DETECTOR PAIR TO MUX FOR OUTPUT A fR 18 RATIO LD 4 PDout/R 5 Rx/V 2 13-STAGE R COUNTER REFout BUFFER AND CONTROL 1 REFin UNUSED 7 2 BitGrabber Plus C REGISTER 7 BITS 13 BitGrabber Plus C REGISTER 7 BITS BitGrabber Plus R REGISTER 16 BITS 16 UNUSED Rs Rs 2 13 13-STAGE R COUNTER 32/33 OR 64/65 PRESCALER fin 13 14 fin fV PHASE/ FREQUENCY DETECTOR PAIR STBY (INTERNAL) LD 17 PDout /R 16 Rx /V 18 RATIO 23 18 fR A & N COUNTERS 23 (INTERNAL) GAIN POLARITY DOUBLE BUFFER 3 PDA/B SELECT 2 STBY (INTERNAL) PDA/B SELECT BitGrabber Plus A REGISTER 23 BITS 23 GAIN 2 (INTERNAL) POLARITY 2 2 fV PORT BitGrabber Plus A REGISTER 23 BITS fR 2 fR 10 MUX UNUSED OUTPUT A fV DATA OUT ENB Din CLK 11 24 1/2 STAGE SHIFT REGISTER 20 19 PIN 9 PIN 6 PIN 12 PIN 15 = = = = 2 ADDRESS LOGIC AND STORAGE 5 2 PLL / PLL SELECT FROM A REGISTER (INTERNAL) V+ (Positive Power to the main PLL, Reference Circuit, and a portion of the Serial Port) GND (Ground to the main PLL, Reference Circuit, and a portion of the Serial Port) V+ (Positive Power to PLL and a portion of the Serial Port) GND (Ground to PLL and a portion of the Serial Port) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145220 4.2-169 MAXIMUM RATINGS* (Voltages Referenced to GND, unless otherwise stated) Parameter Symbol V+, V+i DC Supply Voltage Value Unit - 0.5 to + 6.0 V Vin DC Input Voltage - 0.5 to V+ + 0.5 V Vout DC Output Voltage - 0.5 to V+ + 0.5 V DC Input Current, per Pin 10 mA DC Output Current, per Pin 20 mA DC Supply Current, V+, V+i, GND, and GNDi Pins 30 mA PD Power Dissipation, per Package 300 mW Tstg Storage Temperature - 65 to + 150 C 260 C Iin Iout I TL Lead Temperature, 1 mm from Case for 10 Seconds This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. * Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Electrical Characteristics tables or Pin Descriptions section. ELECTRICAL CHARACTERISTICS (V+ = V+i = 2.7 to 5.5 V, GND = GNDi, Voltages Referenced to GND, TA = - 40 to 85C, unless otherwise stated) Symbol Parameter VIL Maximum Low-Level Input Voltage (Din, CLK, ENB, REFin) Minimum High-Level Input Voltage (Din, CLK, ENB, REFin) VIH Guaranteed Limit Unit Device in Reference Mode, dc Coupled 0.3 x V+ V Device in Reference Mode, dc Coupled 0.7 x V+ V 100 mV 0.1 V Test Condition VHys VOL Minimum Hysteresis Voltage Maximum Low-Level Output Voltage (LD, LDi, REFout, Output A) Iout = 20 A, Device in Reference Mode; Output A Not Selected as Port VOH Minimum High-Level Output Voltage (REFout, Output A) Iout = - 20 A, Device in Reference Mode; Output A Not Selected as Port V+ - 0.1 V IOL IOL Minimum Low-Level Output Current (REFout) Minimum Low-Level Output Current (PDout / R, PDouti / Ri, Rx / V, Rxi / Vi) Vout = 0.3 V Vout = 0.3 V; Phase/Frequency Detectors Configured with R, V Outputs 0.5 mA 0.5 mA IOL IOL Minimum Low-Level Output Current (Output A) mA (LD, LDi) Vout = 0.3 V Vout = 0.3 V 0.5 Minimum Low-Level Output Current 0.5 mA IOH IOH Minimum High-Level Output Current (REFout) Vout = V+ - 0.3 V Vout = V+ - 0.3 V; Phase/Frequency Detectors Configured with R, V Outputs - 0.4 mA - 0.4 mA IOH Iin Minimum High-Level Output Current Vout = V+ - 0.3 V; Output A Not Selected as Port Vin = V+ or GND; Device in XTAL Mode - 0.4 mA 1.0 A 150 A 150 nA Iin (CLK, ENB) Minimum High-Level Output Current (PDout / R, PDouti / Ri, Rx / V, Rxi / Vi) (Output A) Maximum Input Leakage Current (Din, CLK, ENB, REFin) IOZ Maximum Output Leakage Current (PDout / R, PDouti / Ri) Vin = V+ or GND; Device in Reference Mode Vout = V+ or GND; Phase/Frequency Detectors Configured with PDout Output, Output in High- Impedance State IOZ Maximum Output Leakage Current (Output A, LD, LDi) Vout = V+ or GND; Output A Selected as Port; Output in High-Impedance State 5 A Maximum Standby Supply Current Vin = V+ or GND; Outputs Open; Both PLLs in Standby Mode, Shut-Down Crystal Mode or REFout -Static-Low Reference Mode 30 A Total Operating Supply Current fin = fini = 1.1 GHz; both loops active; REFin = 13 MHz @ 1 V p-p; Output A = Inactive; All Outputs = No Connect; Din, ENB, CLK = V+ or GND; Phase/Frequency Detectors Configured with R, V Outputs * mA ISTBY IT Maximum Input Current (REFin) * The nominal value is 12 mA. This is not a guaranteed limit. MC145220 4.2-170 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ANALOG CHARACTERISTICS -- CURRENT SOURCE/SINK OUTPUTS -- PDout/R AND PDout/R (Phase/Frequency Detectors Configured with PDout Outputs, Iout 2 mA @V+ = V+i = 4.5 to 5.5 V, Iout 1 mA @V+ = V+i = 2.7 to 4.4 V, GND = GNDi, Voltages Referenced to GND) Parameter Maximum Source Current Variation Part-to-Part Guaranteed Limit Unit 20 % 12 % 0.5 to V+ - 0.5 V V Test Condition (Notes 3 and 4) Vout = 0.5 x V+ Maximum Sink-versus-Source Mismatch (Note 3) Vout = 0.5 x V+ Output Voltage Range (Note 3) Iout variation 20% NOTES: 5. Percentages calculated using the following formula: (Maximum Value - Minimum Value)/Maximum Value. 6. See Rx Pin Description for external resistor values. 7. This parameter is guaranteed for a given temperature within - 40 to 85C and given supply voltage within 2.7 to 5.5 V. 8. Applicable for the Rx/V or Rx/V reference pin tied to the GND or GND pin through a resistor. See Pin Descriptions for suggested resistor values. AC INTERFACE CHARACTERISTICS (V+ = V+i = 2.7 to 5.5 V, GND = GNDi, TA = - 40 to 85C, CL = 25 pF, Input tr = tf = 10 ns) Parameter Symbol fclk Serial Data CLK Frequency NOTE: Refer to Clock tw below (Figure 1) Guaranteed Limit Unit dc to 2.0 MHz tPLH, tPHL Maximum Propagation Delay, CLK to Output A (Selected as Data Out) (Figures 1 and 5) 200 ns tPZL, tPLZ Maximum Propagation Delay, ENB to Output A (Selected as Port) (Figures 2 and 6) 200 ns tTLH, tTHL Maximum Output Transition Time, Output A; tTHLonly, on Output A when Selected as Port (Figures 1, 5, and 6) 200 ns Maximum Input Capacitance -- Din, CLK, ENB 10 pF Cin TIMING REQUIREMENTS (V+ = V+i = 2.7 to 5.5 V, GND = GNDi, TA = - 40 to 85C, Input tr = tf = 10 ns unless otherwise indicated) Symbol tsu, th Parameter Guaranteed Limit Unit Minimum Setup and Hold Times, Din versus CLK (Figure 3) 50 ns Minimum Setup, Hold, and Recovery Times, ENB versus CLK (Figure 4) 100 ns tw Minimum Pulse Width, ENB (Figure 4) * cycles tw Minimum Pulse Width, CLK (Figure 1) 250 ns Maximum Input Rise and Fall Times -- CLK (Figure 1) 100 s tsu, th, trec tr, tf * The minimum limit is 3 REFin cycles or 195 fin or fin cycles with selection of a 64/65 prescale ratio or 99 fin or fin cycles with selection of a 32/33 prescale ratio, whichever is greater. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145220 4.2-171 tf tr V+ 90% CLK 50% 10% V+ GND tw 50% ENB tw GND 1/fclk tPLH tPHL tPLZ 90% 50% 10% OUTPUT A (DATA OUT) OUTPUT A tTLH tTHL Figure 2. tw VALID tw V+ V+ ENB 50% 50% GND GND tsu 50% 10% Figure 1. Din tPZL th tsu th trec V+ 50% CLK V+ CLK GND 50% FIRST CLOCK LAST CLOCK Figure 3. GND Figure 4. V+ TEST POINT TEST POINT 7.5 k DEVICE UNDER TEST CL* * Includes all probe and fixture capacitance. Figure 5. MC145220 4.2-172 DEVICE UNDER TEST CL* * Includes all probe and fixture capacitance. Figure 6. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA LOOP SPECIFICATIONS (V+ = V+i = 2.7 to 5.5 V unless otherwise indicated, GND = GNDi, TA = - 40 to 85C) Guaranteed Operating Range Symbol Pin Pin Parameter Input Sensitivity Range, fin or fini (Figure 7) -- Isolation Between fin and fini Input Frequency, REFin Externally Driven in Reference Mode (Figure 8) fout f 40 MHz frequency < 300 MHz 300 MHz frequency < 700 MHz 700 MHz frequency < 1100 MHz Min Max Unit -2 -5 - 16 8 6 4 dBm* 10 dB Difference Allowed Between fin and fini fref fXTAL Test Condition Crystal Frequency, Crystal Mode (Figure 9) Output Frequency, REFout (Figures 10 and 12) 15 Vin 400 mV p-p, R Counter set to divide ratio such that fR 1 MHz, REF Counter set to divide ratio such that REFout 5 MHz C1 30 pF, C2 30 pF, Includes Stray Capacitance; R Counter and REF Counter same as above V+ = 2.7 V+ = 3.5 V+ = 4.5 V+ = 5.5 CL = 25 pF Operating Frequency of the Phase Detectors tw Output Pulse Width, R, V, Ri, Vi (Figures 11 and 12) Cin Input Capacitance, REFin fR in Phase with fV, CL = 25 pF 4 dB 27 MHz MHz V V V V 2 2 2 2 10 13 15 15 dc 5 MHz dc 1 MHz 16 125 ns -- 5 pF * Power level at the input to the dc block. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145220 4.2-173 SINE WAVE GENERATOR DC BLOCK 50 PAD OUTPUT A fin 50 (fv) DEVICE UNDER TEST TEST POINT fin GND V+ GNDi V+i NOTE: Alternately, the 50 pad may be a T network. Figure 7. Test Circuit SINE WAVE GENERATOR 0.01 F OUTPUT A REFin 50 50 * Vin GND (fR) DEVICE UNDER TEST V+ TEST POINT TEST POINT REFout GNDi V+i * Characteristic Impedance Figure 8. Test Circuit -- Reference Mode REFin C1 OUTPUT A DEVICE UNDER TEST (fR) TEST POINT REFout C2 GND 1 / f out V+ GNDi V+i REFout Figure 9. Test Circuit -- Crystal Mode 50% Figure 10. Switching Waveform TEST POINT tw OUTPUT DEVICE UNDER TEST CL* 50% * Includes all probe and fixture capacitance. Figure 11. Switching Waveform MC145220 4.2-174 Figure 12. Test Circuit MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA A B fin (PIN 8) SOG PACKAGE C D -j2 Frequency (MHz) 50 -j1 fin (PIN 8) - SOG PACKAGE Impedance () Point 3 V Supply 5 V Supply A 1900 - j 157 1970 - j 102 400 800 B C 1440 - j 228 552 - j 380 1510 + j 19 671 - j 334 1100 D 196 - j 141 223 - j 147 G F E fin (PIN 13) SOG PACKAGE H -j2 fin (PIN 13) - SOG PACKAGE -j1 Frequency (MHz) Point 50 E Impedance () 3 V Supply 5 V Supply 1900 + j 149 1930 + j 214 400 800 F G 878 + j 703 705 + j 208 746 + j 741 626 + j 327 1100 H 215 - j 69.3 243 - j 61.3 Figure 13. Nominal Input Impedance of fin and fin -- Series Format (R + jX) (50 - 1100 MHz) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145220 4.2-175 CLK Serial Data Clock Input (Pin 19) PIN DESCRIPTIONS DIGITAL INTERFACE PINS Din Serial Data Input (Pin 20) The bit stream begins with the MSB and is shifted in on the low-to-high transition of CLK. The bit pattern is 1 byte (8 bits) long to access the C or configuration registers, 2 bytes (16 bits) to access the first buffer of the R registers, or 3 bytes (24 bits) to access the A registers (see Table 1). The values in the registers do not change during shifting because the transfer of data to the registers is controlled by ENB. NOTE The value programmed for the N counter must be greater than or equal to the value of the A counter. The 13 LSBs of the R registers are double-buffered. As indicated above, data is latched into the first buffer on a 16-bit transfer. (The 3 MSBs are not double-buffered and have an immediate effect after a 16-bit transfer.) The two second buffers of the R register contain the two 13-bit divide ratios for the R counters. These second buffers are loaded with the contents of the first buffer as follows. Whenever the A register is loaded, the Rs (second) buffer is loaded from the R (first) buffer. Similarly, whenever the Ai register is loaded, the Rsi (second) buffer is updated from the R (first) buffer. This allows presenting new values to the R, A, and N counters simultaneously. Note that two different R counter divide ratios may be established: one for the main PLL and another for PLLi. The bit stream does not need address bits due to the innovative BitGrabber Plus registers. A steering bit is used to direct data to either the main PLL or PLLi section of the chip. Data is retained in the registers over a supply range of 2.7 to 5.5 V. The formats are shown in Figures 14, 15, and 16. Din typically switches near 50% of V+ to maximize noise immunity. This input can be directly interfaced to CMOS devices with outputs guaranteed to switch near rail-to-rail. When interfacing to NMOS or TTL devices, either a level shifter (MC74HC14A, MC14504B) or pull-up resistor of 1 k to 10 k must be used. Parameters to consider when sizing the resistor are worst-case IOL of the driving device, maximum tolerable power consumption, and maximum data rate. Low-to-high transitions on CLK shift bits available at the Din pin, while high-to-low transitions shift bits from Output A (when configured as Data Out, see Pin 10). The 24-1/2 stage shift register is static, allowing clock rates down to dc in a continuous or intermittent mode. Eight clock cycles are required to access the C registers. Sixteen clock cycles are needed for the first buffer of the R register. Twenty-four cycles are used to access the A registers. See Table 1 and Figures 14, 15, and 16. The number of clocks required for cascaded devices is shown in Figures 25 through 27. CLK typically switches near 50% of V+ and has a Schmitt- triggered input buffer. Slow CLK rise and fall times are allowed. See the last paragraph of Din for more information. NOTE To guarantee proper operation of the power-on reset (POR) circuit, the CLK pin must be held at GND (with ENB being a don't care) or ENB must be held at the potential of the V+ pin (with CLK being a don't care) during power-up. Floating, toggling, or having these pins in the wrong state during power-up does not harm the chip, but causes two potentially undesirable effects. First, the outputs of the device power up in an unknown state. Second, if two devices are cascaded, the A Registers must be written twice after power up. After these two accesses, the two cascaded chips perform normally. ENB Active-Low Enable Input (Pin 11) This pin is used to activate the serial interface to allow the transfer of data to/from the device. When ENB is in an inactive high state, shifting is inhibited and the port is held in the initialized state. To transfer data to the device, ENB (which must start inactive high) is taken low, a serial transfer is made via Din and CLK, and ENB is taken back high. The low-to-high transition on ENB transfers data to the C or A registers and first buffer of the R register, depending on the data stream length per Table 1. Table 1. Register Access NOTE (MSBs are shifted in first; C0, R0, and A0 are the LSBs) Transitions on ENB must not be attempted while CLK is high. This puts the device out of synchronization with the microcontroller. Resynchronization occurs whenever ENB is high and CLK is low. Number of Clocks Accessed Register Bit Nomenclature 8 16 C Registers R Register, First Buffer A Registers Not Allowed See Figures 24 to 27 C7, C6, C5, . . ., C0 R15, R14, R13, . . ., R0 24 Other Values 32 Values > 32 MC145220 4.2-176 A23, A22, A21, . . ., A0 This input is Schmitt-triggered and switches near 50% of V+, thereby minimizing the chance of loading erroneous data into the registers. See the last paragraph of Din for more information. For POR information, see the note for the CLK pin. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA OUTPUT A Configurable Digital Output (Pin 10) Output A is selectable as fR, fV, fRi, fVi, Data Out, or Port. Bits A21 and A22 and the steering bit (A23) control the selection; see Figure 15. When selected as Port, the pin becomes an open-drain N-channel MOSFET output. As such, a pullup device is needed for pin 10. With all other selections, the pin is a totem-pole (push-pull) output. If A22 = A21 = high, Output A is configured as fR when the steering bit is low and fRi when the bit is high. These signals are the buffered outputs of the 13-stage R counters. The signals appear as normally low and pulse high. The signals can be used to verify the divide ratios of the R counters. These ratios extend from 10 to 8191 and are determined by the binary value loaded into bits R0 - R12 in the R register. Also, direct access to the phase detectors via the REFin pin is allowed by choosing a divide value of one. See Figure 16. The maximum frequency at which the phase detectors operate is 1 MHz. Therefore, the frequency of fR and fRi should not exceed 1 MHz. If A22 = high and A21 = low, Output A is configured as fV when the steering bit is low and fVi when the bit is high. These signals are the buffered outputs of the 12-stage N counters. The signals appear as normally low and pulse high. The signals can be used to verify the operation of the prescalers, A counters, and N counters. The divide ratio between the fin or fin input and the fV or fVi signal is N x P + A. N is the divide ratio of the N counter, P is 32 with a 32/33 prescale ratio or 64 with a 64/65 prescale ratio, and A is the divide ratio of the A counter. These ratios are determined by bits loaded into the A registers. See Figure 15. The maximum frequency at which the phase detectors operate is 1 MHz. Therefore, the frequency of fV and fVi should not exceed 1 MHz. If A22 = low and A21 = high, Output A is configured as Data Out. This signal is the serial output of the 24-1/2 stage shift register. The bit stream is shifted out on the high-to-low transition of the CLK input. Upon power up, Output A is automatically configured as Data Out to facilitate cascading devices. If A22 = A21 = low, Output A is configured as Port. This signal is a general-purpose digital output which may be used as an MCU port expander. This signal is low when the Port bit (C1) of the C register is low, and high impedance when the Port bit is high. See Figure 14. REFERENCE PINS REFin and REFout Reference Oscillator Input and Output (Pins 1 and 2) Configurable Pins for a Crystal or an External Reference. This pair of pins can be configured in one of two modes: the crystal mode or the reference mode. Bits R13, R14, and R15 in the R register control the modes as shown in Figure 16. In the crystal mode, these pins form a reference oscillator when connected to terminals of an external parallel-resonant crystal. Frequency-setting capacitors of appropriate values, as recommended by the crystal supplier, are connected from each of the two pins to ground (up to a maximum of 30 pF each, including stray capacitance). An external resistor of 1 M to 15 M is connected directly across the pins to ensure linear operation of the amplifier. The required connections for the crystal are shown in Figure 9. To turn on the oscillator, bits R15, R14, and R13 must have an octal value of one (001 in binary). This is the active-crystal mode shown in Figure 16. In this mode, the crystal oscillator runs and the R Counter divides the crystal frequency, unless the part is in standby. If the part is placed in standby via the C or C register, the oscillator runs, but the R or R counter is stopped, respectively. However, if bits R15 to R13 have a value of 0, the oscillator is stopped, which saves additional power. This is the shut-down crystal mode shown in Figure 16, and can be engaged whether in standby or not. In the reference mode, REFin (pin 1) accepts a signal from an external reference oscillator, such as a TCXO. A signal swinging from at least the VIL to VIH levels listed in the Electrical Characteristics table may be directly coupled to the pin. If the signal is less than this level, ac coupling must be used as shown in Figure 8. The ac-coupled signal must be at least 400 mV p-p. Due to an on-board resistor which is engaged in the reference modes, an external biasing resistor tied between REF in and REF out is not required. With the reference mode, the REF out pin is configured as the output of a divider. As an example, if bits R15, R14, and R13 have an octal value of seven, the frequency at REF out is the REF in frequency divided by 16. In addition, Figure 16 shows how to obtain ratios of eight, four, and two. A ratio of one-to-one can be obtained with an octal value of three. Upon power up, a ratio of eight is automatically initialized. The maximum frequency capability of the REF out pin is 5 MHz for large output swings (VOH to V OL) and 25 pF loads. Therefore, for REFin frequencies above 5 MHz, the one-to-one ratio may not be used for these large signal swing and large CL requirements. Likewise, for REF in frequencies above 10 MHz, the ratio must be more than two. If REF out is unused, an octal value of two should be used for R15, R14, and R13 and the REF out pin should be floated. A value of two allows REF in to be functional while disabling REF out, which minimizes dynamic power consumption and electromagnetic interference (EMI). LOOP PINS fin, fin and fini, fini Frequency Inputs (Pins 8, 7 and 13, 14) These pins feed the onboard RF amplifiers which drive the prescalers. These inputs may be fed differentially. However, they usually are used in single-ended configurations (shown in Figure 7). Note that fin is driven while fin must be tied to ac ground (via capacitor). The signal sources driving these pins originate from external VCOs. Motorola does not recommend driving fin while terminating fin because this configuration is not tested for sensitivity. The sensitivity is dependent on the frequency as shown in the Loop Specifications table. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145220 4.2-177 PDout /R, PDouti /Ri Single-Ended Phase/Frequency Detector Outputs (Pins 4 and 17) When the C2 bits in the C or Ci registers are low, these pins are independently configured as single-ended outputs PD out or PD outi, respectively. As such, each pin is a three- state current-source/sink output for use as a loop error signal when combined with an external low-pass filter. The phase/frequency detector is characterized by a linear transfer function. The operation of the phase/frequency detector is described below and is shown in Figure 17. POL bit (C0) in the C register = low (see Figure 14) Frequency of f V > f R or Phase of f V Leading f R: current- sinking pulses from a floating state Frequency of f V < f R or Phase of f V Lagging f R: current- sourcing pulses from a floating state Frequency and Phase of f V = f R: essentially a floating state; voltage at pin determined by loop filter POL bit (C0) = high Frequency of f V > f R or Phase of f V Leading f R: current- sourcing pulses from a floating state Frequency of f V < f R or Phase of f V Lagging f R: current- sinking pulses from a floating state Frequency and Phase of f V = f R: essentially a floating state; voltage at pin determined by loop filter These outputs can be enabled, disabled, and inverted via the C and Ci registers. If desired, these pins can be forced to the floating state by utilization of the standby feature in the C or Ci registers (bit C6). This is a patented feature. The phase detector gain is controllable by bits C4 and C5: gain (in amps per radian) = PD out current in amps divided by 2. These outputs can be enabled, disabled, or interchanged via C register bits C6 or C0. This is a patented feature. Note that when disabled in standby, these outputs are forced to their rest condition (high state). See Figure 14. The R and V output signals swing from approximately GND to V+. LD and LDi Lock Detector Outputs (Pins 3 and 18) Each output is essentially at a high-impedance state with very narrow low-going pulses of a few nanoseconds when the respective loop is locked (f R and f V of the same phase and frequency). The output pulses low when f V and f R are out of phase or different frequencies. LD is the logical ANDing of R and V, while LDi is the logical ANDing of Ri and Vi. See Figure 17. Upon power up, on-chip initialization circuitry forces LD and LDi to the high-impedance state. These pins are low during standby. If unused, LD should be tied to GND and LDi should be tied to GNDi. These outputs have open-drain N-channel MOSFET drivers. This facilitates a wired-OR function. See Figure 21. Rx/V and Rxi /Vi External Current Setting Resistors (Pins 5 and 16) When the C2 bits in the C or Ci registers are low, these two pins are independently configured as current setting pins Rx or Rxi, respectively. As such, resistors tied between each of these pins and GND and GNDi, in conjunction with bits C4 and C5 in the C and Ci registers, determine the amount of current that the PDout pins sink and source. When bits C4 and C5 are both set high, the maximum current is obtained; see Table 2 for other values of current. Table 2. PDout or PDout Current PD out /R, Rx/ V and PD outi /Ri, Rxi /Vi Double-Ended Phase/Frequency Detector Outputs (Pins 4, 5 and 17, 16) When the C2 bits in the C or Ci registers are high, these two pairs of pins are independently configured as double- ended outputs R , V or Ri , Vi, respectively. As such, these outputs can be combined externally to generate a loop error signal. Through use of a Motorola patented technique, the detector's dead zone has been eliminated. Therefore, the phase/frequency detector is characterized by a linear transfer function. The operation of the phase/frequency detectors are described below and are shown in Figure 17. POL bit (C0) in the C register = low (see Figure 14) Frequency of f V > f R or Phase of fV Leading f R: V = negative pulses, R = essentially high Frequency of f V < f R or Phase of f V Lagging f R: V = essentially high, R = negative pulses Frequency and Phase of f V = f R : V and R remain essentially high, except for a small minimum time period when both pulse low in phase POL bit (C0) = high Frequency of f V > f R or Phase of fV Leading f R: R = negative pulses, V = essentially high Frequency of f V < f R or Phase of f V Lagging f R: R = essentially high, V = negative pulses Frequency and Phase of f V = f R : V and R remain essentially high, except for a small minimum time period when both pulse low in phase MC145220 4.2-178 C5 C4 Current 0 0 1 1 0 1 0 1 5% 50% 80% 100% The formula for determining the value of Rx or Rxi is as follows. Rx = V1 - V2 I where Rx is the value of external resistor in ohms, V1 is the supply voltage, V2 is 1.5 V for a reference current through Rx of 100 A or 1.745 V for a reference current of 200 A, and I is the reference current flowing through Rx or Rxi. The reference current flowing through Rx or Rx is multiplied by a factor of approximately 10 (in the 100% current mode) and delivered by the PD out or PD out pin, respectively. To achieve a maximum phase detector output current of 1 mA, the resistor should be about 15 k when a 3 V supply is employed. See Table 3. Table 3. Rx Values Supply Voltage Rx PDout or PDout Current in 100% Mode 3V 5V 15 k 16 k 1 mA 2 mA MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Do not use a decoupling capacitor on the Rx or Rxi pin. Use of a capacitor causes undesirable current spikes to appear on the phase detector output when invoking the standby mode. POWER SUPPLY PINS V+ and V+i Positive Supply Potentials (Pins 9 and 12) V+ supplies power to the main PLL, reference circuit, and a portion of the serial port. V+i supplies power to PLLi and a portion of the serial port. Both V+ and V+i must be at the same voltage level and may range from 2.7 V to 5.5 V with respect to the GND and GNDi pins. For optimum performance, V+ should be bypassed to GND and V+i bypassed to GNDi using separate low-inductance capacitors mounted very close to the MC145220. Lead lengths and printed circuit board traces to the capacitors should be minimized. (The very fast switching speed of the device can cause excessive current spikes on the power leads if they are improperly bypassed.) GND and GNDi Grounds (Pins 6 and 15) The GND pin is the ground for the main PLL and GNDi is the ground for PLLi. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145220 4.2-179 ENB * 1 CLK 2 3 4 5 6 7 MSB C7 Din 8 LSB C6 C5 C4 C3 C2 C1 C0 * At this point, the new byte is transferred to the C or Ci register and stored. No other registers are affected. C7 - Steer: Used to direct the data to either the C or Ci register. A low level directs data to the C register; a high level is for the Ci register. C6 - Standby: When set high, places both the main PLL and PLLi (when C6 is set in the C register) or PLLi only (when C6 is set in the Ci register) in the standby mode for reduced power consumption. The associated PDout is forced to the floating state, the associated counters (A, N, and R) are inhibited from counting, the associated Rx current is shut off, and the associated prescaler stops counting and is placed in a low current mode. The associated double-ended phase/frequency detector outputs are forced to a high level. In standby, the associated LD output is placed in the low-state, thus indicating "not locked" (open loop). During standby, data is retained in all registers and any register may be accessed. In standby, the condition of the REF/OSC circuitry is determined by bits R13, R14, and R15 in the R register per Figure 16. However, if REFout = static low is selected, the internal feedback resistor is disconnected and the REFin is inhibited when both PLL and PLLi are placed in standby via the C register. Thus, the REFin only presents a capacitive load. Note: PLL/PLLi standby does not affect the other modes of the REF/OSC circuitry as determined by bits R13, R14, and R15 in the R register. The PLLi standby mode (controlled from the Ci register) has no effect on the REF/OSC circuit. When C6 is reset low, the associated PLL (or PLLs) is (are) taken out of standby in two steps. First, the REFin (only in 1 mode, PLL/PLLi in standby) resistor is reconnected, REFin (only 1 mode) is gated on, all counters are enabled, and the Rx current is enabled. Any fR and fV signals are inhibited from toggling the phase/frequency detectors and lock detectors. Second, when the appropriate fR pulse occurs, the A and N counters are jam loaded, the prescaler is gated on, and the phase/frequency and lock detectors are initialized. Immediately after the jam load, the A, N, and R counters begin counting down together. At this point, the fR and fV pulses are enabled to the phase and lock detectors. (Patented feature.) C5, C4 - I2, I1: C3 - Spare: Independently controls the PDout or PDout source/sink current per Table 2. With both bits high, the maximum current (as set by Rx or Rx) is available. POR forces C5 and C4 to high levels. Unused C2 - PDA/B: Independently selects which phase/frequency detector is to be used. When set high, the double-ended detector is selected with outputs R and V or Ri and Vi. When reset low, the current source/sink detector is selected with outputs PDout or PDouti. In the second case, the appropriate Rx or Rxi pin is tied to an external resistor. POR forces C2 low. C1 - Port: When the Output A pin is selected as "Port" via bits A22 and A21, C1 of the C register determines the state of Output A. When C1 is set high, Output A is forced to the high-impedance state; C1 low forces Output A low. The Port bit is not affected by the standby mode. Note: C1 of the Ci register is not used in any mode. C0 - POL: Selects the output polarity of the associated phase/frequency detectors. When set high, this bit inverts the associated current source/sink output and interchanges the associated double-ended output relative to the waveforms in Figure 17. Also, see the phase detector output pin descriptions for more information. This bit is cleared low at power up. Figure 14. C and Ci Register Accesses and Format (8 Clock Cycles are Used) MC145220 4.2-180 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOTE 3 1 CLK 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 C C C C C C C C C C C C C C C C C C C C C CCC C C C CCC C C C CCC C C C C C C CCC C C C C C C C C C C CC CC C C C C CCC C C C C C C C C C C C C CCC C C C C C C C C C C C C CCC C C C CCC C C C C C C CCC Figure 15. A and Ai Register Accesses and Format (24 Clock Cycles are Used) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ENB MSB A23 D in 0 0 1 1 LSB A22 0 1 0 1 A21 PORT DATA OUT f V OR f V i f R OR f R i A20 0 1 A19 32/33 64/65 PRESCALE BINARY OUTPUT A RATIO VALUE FUNCTION (NOTES 1 AND 4) STEER 0 1 MAIN PLL, A REGISTER PLLi , Ai REGISTER (NOTE 4) A18 A17 A16 A15 A14 A13 A12 A11 A10 0 0 0 . . . 0 0 0 . . . 0 1 2 . . . NOT ALLOWED NOT ALLOWED NOT ALLOWED 0 0 0 0 0 . . . F 1 1 1 1 1 . . . F 0 1 2 3 4 . . . E NOT ALLOWED NOT ALLOWED N COUNTER = /18 N COUNTER = /19 N COUNTER = /20 F F F HEXADECIMAL VALUE FOR N COUNTER A9 N COUNTER = /4094 N COUNTER = /4095 A8 A7 A6 A5 A4 A3 A2 A1 0 0 0 0 . . . 0 1 2 3 . . . 3 3 E F 4 4 . . . 0 1 . . . NOT ALLOWED NOT ALLOWED F F NOT ALLOWED A COUNTER A COUNTER A COUNTER A COUNTER A0 = /0 = /1 = /2 = /3 A COUNTER = / 62 A COUNTER = / 63 HEXADECIMAL VALUE FOR A COUNTER AND BITS A7 AND A6 MC145220 4.2-181 NOTES: 1. A power-on initialize circuit forces the Output A function to default to Data Out. 2. The values programmed for the N counter must be greater than or equal to the values programmed for the A counter. This results in a total divide value = N x P + A where N is the value programmed for the N counter, P is 32 if bit A20 is low or 64 if A20 is high, and A is the value programmed for the A counter. 3. At this point, the three new bytes are transferred to the A register if bit A23 is a "0" or Ai register if A23 is a "1". In addition, the 13 LSBs in the first buffer of the R register are transferred to the R register's relative second buffer, Rs or Rsi . Thus, the R, N, and A (or R i, N i, and Ai) counters can be presented new divide ratios at the same time. The first buffer of the R register is not affected. The C or Ci registers are not affected. 4. A "0" for the Steering bit allows selection of f R , f V , Data Out, or Port by bits A21 and A22. A "1" for the Steering bit allows selection of f R,i, f V i, Data Out, or Port. ENB CLK 1 2 3 4 5 6 7 9 8 10 11 12 13 14 15 16 NOTE 4 EE EEEEEEEEEEEEEEEEEEEEEEEEEEEEEEEE EEEEEEEEEEEEEEEEEEEEEEEEEEEEEEEE EE MSB R15 Din LSB R14 R13 R12 R11 R10 0 CRYSTAL MODE, SHUT DOWN 1 CRYSTAL MODE, ACTIVE 2 REFERENCE MODE, REFin ENABLED AND REFout STATIC LOW 3 REFERENCE MODE, REFout = REFin (BUFFERED) 4 REFERENCE MODE, REFout = REFin / 2 5 REFERENCE MODE, REFout = REFin / 4 6 REFERENCE MODE, REFout = REFin / 8 (NOTE 3) 7 REFERENCE MODE, REFout = REFin / 16 OCTAL VALUE BINARY VALUE R8 R9 0 0 0 0 0 0 0 0 0 0 0 0 0 * * * 1 1 0 0 0 0 0 0 0 0 0 0 0 0 0 * * * F F 0 0 0 0 0 0 0 0 0 0 0 0 0 * * * F F R7 0 1 2 3 4 5 6 7 8 9 A B C * * * E F R6 R5 R4 R3 R2 R1 R0 NOT ALLOWED R COUNTER = / 1 (NOTE 6) NOT ALLOWED NOT ALLOWED NOT ALLOWED NOT ALLOWED NOT ALLOWED NOT ALLOWED NOT ALLOWED NOT ALLOWED R COUNTER = / 10 R COUNTER = / 11 R COUNTER = / 12 R COUNTER = / 8190 R COUNTER = / 8191 HEXADECIMAL VALUE NOTES: 1. Bits R15 - R13 control the configurable "Buffer and Control" block (see Block Diagram). 2. Bits R12 - R0 control the "13-stage R counter" blocks (see Block Diagram). 3. A power-on initialize circuit forces a default REFin to REFout ratio of eight. 4. At this point, bits R13, R14, and R15 are stored and sent to the "Buffer and Control" block in the Block Diagram. Bits R0 - R12 are loaded into the first buffer in the double-buffered section of the R register. Therefore, the R or R counter divide ratio is not altered yet and retains the previous ratio loaded. The C, Ci, A, and Ai registers are not affected. 5. Bits R0 - R12 are transferred to the second buffer of the R register (Rs in the Block Diagram) on a subsequent 24-bit write to the A register. The bits are transferred to Rsi on a subsequent 24-bit write to the Ai register. The respective R counter begins dividing by the new ratio after completing the rest of its present count cycle. 6. Allows direct access to reference input of phase/frequency detectors. Figure 16. R Register Access and Format (16 Clock Cycles are Used) MC145220 4.2-182 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA fR REFERENCE REFin / R VH fV FEEDBACK fin / (N x P + A) VH VL VL NOTE 1 SOURCING CURRENT FLOAT PDout SINKING CURRENT VH R VL VH V VL HIGH IMPEDANCE LD VL NOTES: 1. At this point, when both fR and fV are in phase, the output source and sink circuits are turned on for a short interval. 2. The PDout either sources or sinks current during out-of-lock conditions. When locked in phase and frequency, the output is mostly in a floating condition and the voltage at that pin is determined by the low-pass filter capacitor. PDout, R, and V are shown with the polarity bit (POL) = low; see Figure 14 for POL. 3. VH = High voltage level, VL = Low voltage level. 4. The waveforms are applicable to both the main PLL and PLL. Figure 17. Phase/Frequency Detectors and Lock Detector Output Waveforms MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145220 4.2-183 DESIGN CONSIDERATIONS CRYSTAL OSCILLATOR CONSIDERATIONS The following options may be considered to provide a reference frequency to Motorola's CMOS frequency synthesizers. Use of a Hybrid Crystal Oscillator Commercially available temperature-compensated crystal oscillators (TCXOs) or crystal-controlled data clock oscillators provide very stable reference frequencies. An oscillator capable of CMOS logic levels at the output may be direct or dc coupled to REF in. If the oscillator does not have CMOS logic levels on the outputs, capacitive or ac coupling to REFin must be used. See Figure 8. For additional information about TCXOs and data clock oscillators, please consult the latest version of the eem Electronic Engineers Master Catalog, the Gold Book, or similar publications. Design an Off-Chip Reference The user may design an off-chip crystal oscillator using discrete transistors or ICs specifically developed for crystal oscillator applications, such as the MC12061 MECL device. The reference signal from the MECL device is ac coupled to REF in. (See Figure 8.) For large amplitude signals (standard CMOS logic levels), dc coupling may be used. Use of the On-Chip Oscillator Circuitry The on-chip amplifier (a digital inverter) along with an appropriate crystal may be used to provide a reference source frequency. A fundamental mode crystal, parallel resonant at the desired operating frequency, should be connected as shown in Figure 18. The crystal should be specified for a loading capacitance, CL, which does not exceed approximately 20 pF when used near the highest operating frequency of the MC145220. Assuming R1 = 0 , the shunt load capacitance, CL, presented across the crystal can be estimated to be: CL = CinCout + Ca + Cstray + C1 * C2 C1 + C2 Cin + Cout MC145220 4.2-184 where Cin = 5 pF (see Figure 19) Cout = 6 pF (see Figure 19) Ca = 1 pF (see Figure 19) C1 and C2 = external capacitors (see Figure 18) Cstray = the total equivalent external circuit stray capacitance appearing across the crystal terminals The oscillator can be "trimmed" on-frequency by making either a portion or all of C1 variable. The crystal and associated components must be located as close as possible to the REF in and REF out pins to minimize distortion, stray capacitance, stray inductance, and startup stabilization time. Circuit stray capacitance can also be handled by adding the appropriate stray value to the values for C in and C out. For this approach, the term C stray becomes zero in the above expression for C L. Power is dissipated in the effective series resistance of the crystal, R e, in Figure 20. The maximum drive level specified by the crystal manufacturer represents the maximum stress that the crystal can withstand without damage or excessive shift in operating frequency. R1 in Figure 18 limits the drive level. The use of R1 is not necessary in most cases. To verify that the maximum dc supply voltage does not cause the crystal to be overdriven, monitor the output frequency (f R) at Output A as a function of supply voltage. (REF out is not used because loading impacts the oscillator.) The frequency should increase very slightly as the dc supply voltage is increased. An overdriven crystal decreases in frequency or becomes unstable with an increase in supply voltage. The operating supply voltage must be reduced or R1 must be increased in value if the overdriven condition exists. Note that the oscillator start-up time is proportional to the value of R1. Through the process of supplying crystals for use with CMOS inverters, many crystal manufacturers have developed expertise in CMOS oscillator design with crystals. Discussions with such manufacturers can prove very helpful. See Table 4. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA RS FREQUENCY SYNTHESIZER REFin 1 2 2 CO R1* C1 1 REFout Rf CS LS 1 Re Xe 2 C2 NOTE: Values are supplied by crystal manufacturer (parallel resonant crystal). * May be needed in certain cases. See text. Figure 20. Equivalent Crystal Networks Figure 18. Pierce Crystal Oscillator Circuit Ca REFin REFout Cin RECOMMENDED READING Cout Cstray Figure 19. Parasitic Capacitances of the Amplifier and Cstray Technical Note TN-24, Statek Corp. Technical Note TN-7, Statek Corp. E. Hafner, "The Piezoelectric Crystal Unit - Definitions and Method of Measurement", Proc. IEEE, Vol. 57, No. 2, Feb. 1969. D. Kemper, L. Rosine, "Quartz Crystals for Frequency Control", Electro-Technology, June 1969. P. J. Ottowitz, "A Guide to Crystal Selection", Electronic Design, May 1966. D. Babin, "Designing Crystal Oscillators", Machine Design, March 7, 1985. D. Babin, "Guidelines for Crystal Oscillator Design", Machine Design, April 25, 1985. Table 4. Partial List of Crystal Manufacturers United States Crystal Corp. Crystek Crystal Statek Corp. Fox Electronics MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145220 4.2-185 PHASE-LOCKED LOOP -- LOW-PASS FILTER DESIGN (A) PDout VCO K KVCO NC n = R = C Z(s) = R 2 K KVCOC N = nRC 2 1 + sRC sC NOTE: For (A), using K in amps per radian with the filter's impedance transfer function, Z(s), maintains units of volts per radian for the detector/ filter combination. Additional sideband filtering can be accomplished by adding a capacitor C across R. The corner c = 1/RC should be chosen such that n is not significantly affected. R2 (B) R R1 n = C - V + A VCO = R1 R2 K KVCO NCR1 nR2C 2 ASSUMING GAIN A IS VERY LARGE, THEN: C Z(s) = R2sC + 1 R1sC NOTE: For (B), R1 is frequently split into two series resistors; each resistor is equal to R1 divided by 2. A capacitor CC is then placed from the midpoint to ground to further filter the error pulses. The value of CC should be such that the corner frequency of this network does not significantly affect n. DEFINITIONS: N = Total Division Ratio in Feedback Loop K (Phase Detector Gain) = IPDout/2 amps per radian for PDout K (Phase Detector Gain) = V+/2 volts per radian for V and R 2fVCO KVCO (VCO Transfer Function) = radians per volt VVCO For a nominal design starting point, the user might consider a damping factor 0.7 and a natural loop frequency n (2fR/50) where fR is the frequency at the phase detector input. Larger n values result in faster loop lock times and, for similar sideband filtering, higher fR-related VCO sidebands. Either loop filter (A) or (B) is frequently followed by additional sideband filtering to further attenuate fR-related VCO sidebands. This additional filtering may be active or passive. RECOMMENDED READING: Gardner, Floyd M., Phaselock Techniques (second edition). New York, Wiley-Interscience, 1979. Manassewitsch, Vadim, Frequency Synthesizers: Theory and Design (second edition). New York, Wiley-Interscience, 1980. Blanchard, Alain, Phase-Locked Loops: Application to Coherent Receiver Design. New York, Wiley-Interscience, 1976. Egan, William F., Frequency Synthesis by Phase Lock. New York, Wiley-Interscience, 1981. Rohde, Ulrich L., Digital PLL Frequency Synthesizers Theory and Design. Englewood Cliffs, NJ, Prentice-Hall, 1983. Berlin, Howard M., Design of Phase-Locked Loop Circuits, with Experiments. Indianapolis, Howard W. Sams and Co., 1978. Kinley, Harold, The PLL Synthesizer Cookbook. Blue Ridge Summit, PA, Tab Books, 1980. Seidman, Arthur H., Integrated Circuits Applications Handbook, Chapter 17, pp. 538-586. New York, John Wiley & Sons. Fadrhons, Jan, "Design and Analyze PLLs on a Programmable Calculator," EDN. March 5, 1980. AN535, Phase-Locked Loop Design Fundamentals, Motorola Semiconductor Products, Inc., 1970. AR254, Phase-Locked Loop Design Articles, Motorola Semiconductor Products, Inc., Reprinted with permission from Electronic Design, 1987. AN1253, An Improved PLL Design Method Without n and , Motorola Semiconductor Products, Inc., 1995. MC145220 4.2-186 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA +V NOTE 6 NOTE 5 Q1 R1 +V MC145220 1 2 3 LOW-PASS FILTER 4 5 6 VCO 7 8 REFin Din REFout CLK LD LDi PDout /R Rx/V GND PDouti /Ri Rxi /Vi GNDi fin fini fin fini 20 19 MCU 18 17 LOW-PASS FILTER 16 15 VCO 14 13 +V +V 9 BUFFER V+ V+i 12 BUFFER NOTE 4 OUTPUT 10 OUTPUT A (PORT) ENB 11 OUTPUT GENERAL PURPOSE DIGITAL OUTPUT NOTES: 1. The PDout output is fed to an external loop filter. See the Phase-Locked Loop -- Low-Pass Filter Design page for additional information. 2. For optimum performance, bypass the V+ and V+i pins to GND and GNDi with low-inductance capacitors. 3. The R counter is programmed for a divide value = REFin /fR. Typically, fR is the tuning resolution required for the VCO. Also, the VCO frequency divided by fR = NT = N S P + A; this determines the values (N, A) that must be programmed into the N and A counters, respectively. P is the lower divide ratio of the dual-modulus prescaler (i.e., 32 or 64). 4. Pull-up voltage must be at the same potential as the V+ pin or less. Pull-up device other than a resistor may be used. (Pull-up device not required when Output A is configured as fR, fR, fV, fV, DATA OUT.) 5. LD and LD are open-drain outputs. This allows the wired-OR configuration shown. Note that R1 and Q1 form the "pull-up device". 6. Use of Q1 is optional and depends on loading. Figure 21. Application Showing Use of the Two Single-Ended Phase/Frequency Detectors MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145220 4.2-187 +V NOTE 6 NOTE 5 Q1 R1 +V MC145220 1 2 3 LOW-PASS FILTER 4 5 6 VCO 7 8 REFin Din REFout CLK LD LDi PDout /R Rx/V GND PDouti /Ri Rxi /Vi GNDi fin fini fin fini 20 19 MCU 18 17 LOW-PASS FILTER 16 15 VCO 14 13 +V +V 9 BUFFER V+ V+i 12 BUFFER NOTE 4 OUTPUT 10 OUTPUT A (PORT) ENB 11 OUTPUT GENERAL PURPOSE DIGITAL OUTPUT NOTES: 1. The R and V outputs are fed to an external combiner/loop filter. See the Phase-Locked Loop -- Low-Pass Filter Design page for additional information. The R and V outputs swing rail-to-rail. Therefore, the user should be careful not to exceed the common mode input range of the op amp used in the combiner/loop filter. 2. For optimum performance, bypass the V+ and V+i pins to GND and GNDi with low-inductance capacitors. 3. The R counter is programmed for a divide value = REFin /fR. Typically, fR is the tuning resolution required for the VCO. Also, the VCO frequency divided by fR = NT = N S P + A; this determines the values (N, A) that must be programmed into the N and A counters, respectively. P is the lower divide ratio of the dual-modulus prescaler (i.e., 32 or 64). 4. Pull-up voltage must be at the same potential as the V+ pin or less. Pull-up device other than a resistor may be used. (Pull-up device not required when Output A is configured as fR, fR, fV, fV, DATA OUT.) 5. LD and LD are open-drain outputs. This allows the wired-OR configuration shown. Note that R1 and Q1 form the "pull-up device". 6. Use of Q1 is optional and depends on loading. Figure 22. Application Showing Use of the Two Double-Ended Phase/Frequency Detectors MC145220 4.2-188 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA +V NOTE 6 NOTE 5 Q1 R1 +V MC145220 1 2 3 LOW-PASS FILTER 4 5 6 VCO 7 8 REFin Din REFout CLK LD LDi PDout /R Rx/V PDout/R Rxi /Vi GND GNDi fin fini fin fini 20 19 MCU 18 17 LOW-PASS FILTER 16 15 VCO 14 13 +V +V 9 BUFFER V+ V+i 12 BUFFER NOTE 4 10 OUTPUT OUTPUT A (PORT) ENB 11 OUTPUT GENERAL PURPOSE DIGITAL OUTPUT NOTES: 1. See the Phase-Locked Loop -- Low-Pass Filter Design page for additional information. 2. For optimum performance, bypass the V+ and V+i pins to GND and GNDi with low-inductance capacitors. 3. The R counter is programmed for a divide value = REFin /fR. Typically, fR is the tuning resolution required for the VCO. Also, the VCO frequency divided by fR = NT = N S P + A; this determines the values (N, A) that must be programmed into the N and A counters, respectively. P is the lower divide ratio of the dual-modulus prescaler (i.e., 32 or 64). 4. Pull-up voltage must be at the same potential as the V+ pin or less. Pull-up device other than a resistor may be used. (Pull-up device not required when Output A is configured as fR, fR, fV, fV, DATA OUT.) 5. LD and LD are open-drain outputs. This allows the wired-OR configuration shown. Note that R1 and Q1 form the "pull-up device". 6. Use of Q1 is optional and depends on loading. Figure 23. Application Showing Use of Both the Single- and Double-Ended Phase/Frequency Detectors DEVICE #2 DEVICE #1 Din CLK ENB OUTPUT A (DATA OUT) Din CLK ENB OUTPUT A (DATA OUT) CMOS MCU OPTIONAL NOTE: See related Figures 25, 26, and 27. Figure 24. Cascading Two Devices MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145220 4.2-189 MC145220 4.2-190 CLK 1 2 7 8 9 10 15 16 17 18 23 24 25 26 31 32 * C C C CCC C C C C C C CCC C C C C C C C C C CCC CCC CCC C C C CCC C C C CCC CCC C C C CCC C C C C C C CCC C C C C C C C C C CCC MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Figure 25. Accessing the C or C Registers of Two Cascaded MC145220 Devices (32 Clock Cycles are Used) ENB D in C7 C6 C0 C OR Ci REGISTER BITS OF DEVICE #2 IN FIGURE 24 X X X X X X C7 C6 C0 C OR C i REGISTER BITS OF DEVICE #1 IN FIGURE 24 *At this point, the new bytes are transferred to the C or C i registers of both devices and stored. No other registers are affected. CLK 1 2 7 8 9 15 16 17 23 24 25 31 32 * 38 39 40 47 48 C C C C C C C C C C C C CCC C C C C C C CCC CCC CCC C C C C CC CC C C C C C C C C C C CCC C C C CCC C C C C CC CC C CCC CCC C C C C C C CCC Figure 26. Accessing the A or A Registers of Two Cascaded MC145220 Devices (48 Clock Cycles are Used) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ENB D in A23 A22 A16 A15 A8 A OR Ai REGISTER BITS OF DEVICE #2 IN FIGURE 24 A7 A0 A23 A16 A9 A8 A0 A OR Ai REGISTER BITS OF DEVICE #1 IN FIGURE 24 *At this point, the new bytes are transferred to the A or Ai registers of both devices and stored. Additionally, for both devices, the 13 LSBs in each of the first buffers of the R Registers are transferred to the respective R register's second buffer. Thus, the R, N, and A (R i, N i, and Ai) counters can be presented new divide ratios at the same time. The first buffer of each R register is not affected. None of the C or Ci registers are affected. MC145220 4.2-191 MC145220 4.2-192 ENB CLK 2 7 8 9 15 16 17 23 24 25 31 32 33 39 40 C C C C C C C C C CCC CCC CCC C C C C C C CCC C CC CC C C C C CCC C C C C CC CC C CCC CCC C C C C C C CCC CCC C C C C C C C C C CCC MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Figure 27. Accessing the R Registers of Two Cascaded MC145220 Devices (40 Clock Cycles are Used) NOTE 1 1 D in R15 R14 R8 R7 R REGISTER BITS OF DEVICE #2 IN FIGURE 24 R0 X X R15 R8 R7 R0 R REGISTER BITS OF DEVICE #1 IN FIGURE 24 NOTES APPLICABLE TO EACH DEVICE: 1. At this point, bits R13, R14, and R15 are stored and sent to the Buffer and Control block in the Block Diagram. Bits R0 through R12 are loaded into the first buffer in the double-buffered section of the R register. Therefore, the R and Ri counter divide ratios are not altered yet and retain the previous ratios loaded. The other registers are not affected. 2. See note of Figure 26 for the method of loading the second buffers in the R register to achieve new divide ratios. MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC145220EVK Technical Summary MC145220 Evaluation Board INTRODUCTION The MC145220EVK makes it easy to exercise features of the MC145220 and build PLLs which meet individual performance requirements. The EVK is controlled through menu driven software operating on an IBM PC or compatible. Other Motorola PLL EVKs (MC145190, MC145191, MC145192, MC145200, MC145201, MC145202) in up to three-board cascades can use the same program. Frequency defaults that apply to each are automatically selected. All board functions are controlled through the printer port of an IBM PC. Up to three different EVKs may be controlled at the same time from one printer port. The functional block diagram is given in Figure 1. This technical summary contains the hardware description for the evaluation board and a summary of the software section. For complete information, consult the manual that is provided in the evaluation kit. ORDERING INFORMATION These kits may be ordered through your local Motorola Semiconductor sales office or authorized distributor. Ask your Motorola representative to order the kits from the finished goods warehouse, not the literature distribution center. Request the part number shown below. Part Number Description MC145220EVK Kit with the MC145220 installed. This document contains information on a new product. Specifications and information herein are subject to change without notice. REV 2 1/99 TN98012100 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145220EVK 4.2-193 SECTION 1 - HARDWARE FEATURES 1. 2. 3. 4. 5. 6. 7. 8. The EVK is a complete working synthesizer, including VCOs. Board is controlled by an IBM PC-compatible computer through the printer port. Up to three boards can be operated independently through one printer port. A prototype area and mounting holes are provided for VCOs, mixers, and amplifiers. External reference input can be used. Five element loop filter is included. Frequency range of operation, step size and reference frequency can be changed in the control program. Lock Detect, Out A, and Out B on any single board are accessible through the printer port. CONTENTS OF EVALUATION KIT 1. 2. 3. 4. 5. Assembled evaluation board. Nine-foot flat cable with four DB-25 male connectors. MC145220EVK manual. 3.5 PC-compatible disk containing compiled program. PLL device data sheets. GETTING STARTED To perform basic functions, do the following: 1. 2. 3. 4. 5. Plug in 12 volts at J8, observing the polarity marked on the board. Short circuit section 1 of the DIP switch (S1) and open circuit all other sections. Connect the supplied flat cable between the computer printer port and the DB-25 connector on the board (J9). Type PLL at the DOS prompt. Then press enter. Type the number that corresponds with the type of board given in the on-screen menu. The MC145220 may operate in single loop or dual loop mode. Then press Q. You should now see the main menu displayed. There should be a signal present at J5 if single loop, or J12 if dual loop. The frequency will be the current output frequency given in the main menu. If the signal is not on the correct frequency, check to see if your printer port address is $278 (hexadecimal 278). If not, then select the P menu item and enter the correct address. After returning to the main menu, select the I menu item to send data to the board. You should now be on frequency. MODIFICATIONS The user may modify the hardware, such as utilizing a different VCO, by using the prototyping area of the board. After such modifications are made, the default values in the software may need to be changed. This is facilitated from the `Select from the available options' screen. Note that the on-board voltage regulators allow for a maximum VCO control voltage range of 0.5 - 4.5 volts. MC145220EVK 4.2-194 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Logic Control Switches 74HCT241, 74LS126 Buffer Logic Frequency Control Data Parallel Port Connector 10.01 MHz TCXO External Reference 14.4 MHz TCXO REFin PDout MC145220 PLL Out A, Out B, Lock Detect Loop Filter VCO 790 - 820 MHz VCO 733 - 743 MHz Loop Filter MC145220 PLL Fin Fin LO RF IF Single Loop Output 790 - 820 MHz Single Loop Output 733-743 MHz Fc = 80 MHz Dual Mode Output 60 - 80 MHz (f - f) Amplifier Figure 1. Evaluation Kit Block Diagram MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145220EVK 4.2-195 TYPICAL PERFORMANCE Typical performance applies only to the configuration as shipped. The MC145220EVK is shipped with V+ = 5 V. For lowest phase noise in single or dual loop mode, a 50 load must be connected to J12. Single Loop PLL Single Loop PLL Supply Voltage (J8) 11.5 - 12.5 V Supply Current (J8) (Note 1) 177 mA 45 mA Available Current (Note 2) Frequency Range (Note 3) Dual Loop PLL 733 - 743 MHz 790 - 820 MHz Reference Frequency (M1) 10.01 MHz Temperature Stability (M1, - 30C to + 70C) < 2.5 ppm 60 - 80 MHz Reference Frequency (M5) 14.4 MHz N/A Temperature Stability (M5, - 30C to + 85C) < 2 ppm N/A < 1 ppm / year TCXO Aging (M1, M5) Step Size 10 kHz 10 Hz Power Output - 3.0 dBm - 5.0 dBm 4.5 - 7.5 dBm Frequency Accuracy 1.5 kHz 1.5 kHz 50 Hz - 57 dB - 74 dB - 57 dB Phase Noise (100 Hz) - 65 dBc/Hz - 56 dBc/Hz - 50 dBc/Hz Phase Noise (10 kHz) (Note 5) - 104 dBc/Hz - 90 dBc/Hz - 89 dBc/Hz 24 ms 40 ms 45 ms Reference Sidebands (Note 4) Switching Time (Note 6) NOTES: 1. Supply current is current the board requires without user modifications. 2. Available current is the sum of currents available to the user (in the prototype area) from the 5 V and 8.5 V supply. The 12 V supply is not regulated. Current at 12 V is limited by the external power supply. If the on-board VCO and amplifier are disconnected from the power bus, more current can be drawn in the prototype area. The current flowing into U5 (the 8.5 V regulator) should not exceed 180 mA. This will limit temperature rise in U5. 3. Frequency ranges require use of the 5 V default charge pump supply voltage. 4. VCO sidebands on PLL at low step sizes (10 kHz) are limited by control line leakage of the VCO. Up to 24 nA of leakage has been seen. At higher step sizes (100 kHz and above), this effect is much less noticable. This did not affect PLL because its VCO leakage was less than 10 pA. 5. 10 kHz phase noise is limited by the PLL device noise. For low noise designs, the loop bandwidth is made narrower and the VCO is relied upon to provide the 10 kHz phase noise. This can be seen on the EVKs since the VCOs have much lower noise. 6. 10 MHz step, within 1 kHz of final frequency ('220). Due to the software architecture, when the user is measuring the switching time of a single board in dual loop mode, it takes 20 ms to load the data as compared to single loop mode, which takes 8 ms to load the data. This is a limitation of the software, not the IC. To find the actual PLL switching time, subtract 8 or 20 ms from the switching time stated in the table. MC145220EVK 4.2-196 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA SUPPORT MATERIAL The following documents are included in the appendix: 1. 2. 3. 4. 5. 6. Schematic diagram of MC145220EVK. Bill of materials. Parts layout diagram. Mechanical drawing of board. MC145220 data sheet. Typical signal plots. PRODUCTION TEST After assembly is complete, the following alignment and test is performed: 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. The control program is started in '220 single loop mode. [L]! is selected to set PLL frequency to 733 MHz. Power is applied to the board. DIP switch section 1 is closed circuit with all others being open circuit. After attaching computer cable, [I]! is selected. Trim resistor VR1 is adjusted to obtain an output frequency at J5 of 733 MHz 500 Hz. Voltage at the control voltage test point (TP2) is measured. It must be > 0.5 V. [H]! is selected. Voltage at the control voltage test point (TP2) is measured. It must be < 4.4 V. [T]! is selected to toggle to PLL. [L]! is selected to set PLL frequency to 790 MHz. Voltage at the control voltage test point (TP9) is measured. It must be > 0.5 V. [H]! is selected to set PLL frequency to 820 MHz. Voltage at the control voltage test point (TP9) is measured. It must be < 4.4 V. [G] is selected and the board type is changed to '220 dual loop mode. [Q]!, then [I]!, is selected to initialize the dual mode output (J12) to 70 MHz. The frequency should be 70 MHz 50 Hz. If in step 5 it isn't possible to obtain a signal on frequency, the adjustment screw in M1 may be turned for further frequency adjustment range. If neither adjustment works, [P] should be selected and the correct printer port address entered. [I]! is then selected to reload the data. BOARD OPERATION A computer is connected to the DB-25 connector J9. Data is output from the printer port. The printer card is in slot 0 using the default address in the control program. Data is sent to the PLL device (U1) through the DIP switch (S1), and 74HCT241 buffer (U2). D1, D2, D3, R7, R8, and R12 are in the data path between the 'HCT241 and PLL device. This limits the high level output voltage of the buffer. Voltage on PLL device inputs must be no greater than 0.5 V above V+. A '220 PLL has three output lines which are routed through a 74LS126 line driver (U3) back to the computer. U2, the 74HCT241, provides isolation and logic translation for PLL input lines. Logic translation is needed from the TTL levels on the printer port to the CMOS levels on the '220 inputs. A 12 V power supply should be used to power the board at J8 (Augat 2SV-02 connector). The 2SV-02 will accept 18-24 AWG bare copper power leads. No tools are needed for connection. If power is properly connected, LED D4 will be lit. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145220EVK 4.2-197 Power passes from J8 to U5 (LM317 regulator) configured as an 8.5 V regulator. 8.5 V powers the VCOs. Regulators U6 and U7 use the 8.5 V supply to produce 3 V and 5 V. The '220 board can use either to power the logic and charge pump. V+ voltage is selected by J11. U6 and U7 are cascaded with U5 to equalize their individual voltage drops. The '220 operates in both a single loop and dual loop mode. There are no component changes between the two modes. The differences are in the programming of the counters and the SMA connector that is used. The PLL loop is composed of the MC145220 (U1), 733 - 743 MHz VCO (M2), and a passive loop filter (R4, R5, C6, C7, C8). In single loop mode, output is taken from J5. A passive loop filter was used to keep the design simple, reduce noise, and reduce the quantity of traces susceptible to stray pickup. The PLL loop is composed of the MC145220 (U1), 790 - 820 MHz VCO (M3), and a passive loop filter (R22, R25, C24, C26, C30). In single loop mode, output is taken from J10. Dual mode output is the (f - f) frequency output from the mixer. It is low pass filtered (L1, L2, C15, C21, C22) then amplified (U4). The output is available at J12. Phase detector current is 2 mA. J1 is a removable jumper used for current measurement of V+. Two TCXOs, a Motorola Saber 14.4 MHz (M5), and Raltron 10.01 MHz (M1) are supplied. As shipped from the factory, the 10.01 MHz TCXO is in use. This allows both the 10 kHz and 10 Hz step sizes to be used with one TCXO. 10.01 MHz cannot be divided for larger step sizes such as 100 kHz. For larger step sizes use the Saber. Jumpers J3, J4, J13, and J14 determine which TCXO or the external reference input is in use. DUAL MODE OUTPUT The dual mode output (J12) is the difference frequency from mixing PLL and PLL. By using a reference frequency of 10.01 MHz, PLL can be operated with a 10.01 kHz step size and PLL with a 10 kHz step size. If both PLL and PLL step down in frequency, the mixed output will step up by 10 Hz. More information on the offset reference technique is in AN1277/D, Offset Reference PLLs for Fine Resolution or Fast Hopping. The block diagram, formulas, and an example are shown in Figure 2. 10.01 kHz R COUNTER / 1000 PLL PHASE DETECTOR VCO 730.7 - 740.7 MHz /N COUNTER f N = 73,001 - 74,000 (f - f) REFERENCE 10.01 MHz MIXER 60 - 80 MHz (10 Hz STEPS) N = 79,075 - 82,074 PLL R COUNTER / 1001 10 kHz / N COUNTER PHASE DETECTOR f VCO 790.7 - 820.7 MHz Figure 2. Dual Mode Block Diagram MC145220EVK 4.2-198 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA PLL PLL f = N (10.01 kHz) f = N (10 kHz) f = 10.01 kHz 74,000 - N = 74,000 - r(f - f) 10 Hz f = 10 kHz r(f - f) 10 Hz w(f - f) + 740 kHz +N 10 kHz N = N + 74 + w(f - f) 10 kHz (f - f) = w(f - f) + r(f - f) (f - f) = Desired Output Frequency w(f - f) = Output Frequency Portion that Divides Evenly by 10 kHz r(f - f) = Remainder from Output Frequency Division by 10 kHz Dual Mode Formulas Example: Synthesize 76.849 930 MHz r(f - f) = 9.930 kHz, N = 74,000 - w(f - f) = 76.840 MHz 9.930 kHz = 73,007 10 Hz N = 73,007 + 74 + 76.840 MHz = 80,765 10 kHz f = 73,007 (10.01 kHz) = 730.800 070 MHz f = 80,765 (10 kHz) = 807.650 000 MHz (f - f)= 807.650 000 MHz - 730.800 070 MHz = 76.849 930 MHz MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145220EVK 4.2-199 EXTERNAL REFERENCE INPUT To use an external reference, disconnect J3, J4, J13, and J14. Use a reference signal at J2 which complies with data sheet requirements. Then modify the reference frequency in the program main menu to reflect the changes made (F menu item). DATA TRANSFER FROM COMPUTER TO EVK To control the serial input EVK with the parallel printer port, a conversion is done. Printer cards are designed to output eight bits through eight lines. A bit mask is used to obtain the bit combination for the three required output lines (Data, Clock, Load). As bytes are sent to the printer card in sequence, it appears to be a serial transfer. The printer port is used because data transfer using the serial port would be much slower. A standard IBM PC can support a parallel port data rate of 4.77 MHz. IBM PCs and compatibles can accept up to three printer port configurations. These ports are called LPT1, LPT2, and LPT3. Each printer port has a unique address. Two sets of addresses are in common use. One set applies to IBM PC XT, AT, and clones. The other is for the PS 2 line. To load data into the EVK, the correct address must be selected. The program default is $278. If $278 is not the address in use, it must be modified by entering the P menu item in the main menu. All allowed addresses given in hexadecimal are as follows: Label IBM PC and Clones PS 2 LPT1 278 3BC LPT2 378 378 LPT3 3BC 278 Up to three EVK boards can operate independently from one printer port. All lines on the printer port are connected to every EVK. Even with three boards operating, only three output lines (Clock, Data, and Load) from the printer card are used. If two boards are controlled together, data for the second board is received from the Output A of the first. Output A is a configurable output on '220 devices, which in this case is used to shift data through chip 1 into chip 2. Output A and Data are connected using a printer port input line. This was done to avoid connecting extra wires. Fortunately not all port input lines are needed for computer input. Load and Clock are common to both boards. A three-board cascade is handled similarly to a two-board cascade. Out A on the first board is fed to Data on the second. Out A on the second connects to Data on the third. Instructing the program on the quantity of boards connected together allows it to modify the number of bits sent. All boards have a DIP switch S1 which gives each a unique address. The configuration menu is used to tell the program what type of board is connected at a board address. Switch positions for all possible addresses are given in Figure 2. MC145220EVK 4.2-200 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Single Board Operation 1 2 3 4 5 6 7 8 Closed Open Two- or Three-Board Cascade Board A 1 2 3 4 5 6 7 8 2 3 4 5 6 7 8 2 3 4 5 6 7 8 Closed Open Board B 1 Closed Open Board C 1 Closed Open Figure 3. Switch Positions In Figure 2, DIP switch sections 6, 7, and 8 allow the computer to read Out A, Lock Detect, or Lock Detect from the PLL device. Each of the inputs can only be read on one board at a time, but each item could be read on a different board. In a three-board cascade, Out A could be read from the first board, Out B from the second, and Lock Detect from the third. There is no way to determine the board address of a particular input with software. The control program does not make use of these inputs; however, source code could be modified as required. Pin assignment on the printer port connector is: Label Pin Number Out A 12 Out B 13 Lock Detect 15 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145220EVK 4.2-201 PRINTER PORT CONFIGURATION Printer port outputs on an IBM PC or clone use TTL-LS logic levels. Inputs are one TTL-LS load. Signal lines can be used for any purpose. The standard names, direction of data flow, true and inverted data are shown in Figure 3. Pin Number Signal Name - Strobe 1 2 3 4 + Data Bit 0 + Data Bit 1 + Data Bit 2 + Data Bit 3 + Data Bit 4 + Data Bit 5 + Data Bit 6 Printer 5 6 7 8 9 + Data Bit 7 - Acknowledge + Busy 10 11 12 + P. End (out of paper) + Select - Auto Feed - Error - Initialize Printer IBM Printer Port 13 14 15 16 17 18 - 25 - Select Input Ground Figure 4. Printer Port Data Lines Pin numbers for the port connector are shown in Figure 4. 13 25 (front view) 1 14 Figure 5. DB-25 Male Connector MC145220EVK 4.2-202 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA SECTION 2 - SOFTWARE DESCRIPTIONS SUMMARY INTRODUCTION The MC145xxx EVK control program is used to program all PLL evaluation kits. It will simultaneoulsy control up to three different boards independently from one printer port. All features of the PLL device may be accessed. Default frequencies can be modified to allow use of different channel spacings and VCOs. User input errors are detected and appropriate messages are displayed. To show the format of the program, a sample screen is shown below: `Select from the available options' Welcome to MC145xxx EVK Demonstration Program, rev 4.0 Select from the available options Available Boards - Current target board is: A, MC145220 Dual Brd [A]!: MC145220 Dual Brd [-]!: N/A Brd [-]!: N/A -------------------------------------------------------------------------------- MC145xxx Frequency Commands - Current Output Frequency is 70 MHz [L]! Set to low freq. 60 MHz [W] Change default low freq. 70 MHz [Y] Change default med. freq. [M]! Set to med. freq. 80 MHz [Z] Change default high freq. [H]! Set to high freq. [U]! Step frequency up by step size [O] Set PLL output frequency [D]! Step frequency down by step size [F] REFin freq. & channel spacing MC145xxx Additional Commands [E] Set function of output A [N] Change C register and Prescale [R] Set crystal/reference mode - Current mode is Ref. mode, REFout low -------------------------------------------------------------------------------- Initialization/System Setup Commands: [P] Set output port address - Current address is $278 [G] Change board definitions [I] Initialize board(s), Write all registers [X]! Terminate demonstration program. [?]! View help screen. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145220EVK 4.2-203 APPENDIX MC145220 PLL Evaluation Board MC145220EVK 4.2-204 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145220 Power Supply and Reference MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145220EVK 4.2-205 MC145220EVK Bus Interface MC145220EVK 4.2-206 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145220EVK Signal Plot -- Dual Loop Mode Output at 70 MHz MC145220EVK Signal Plot -- Single Loop Mode PLL on 805 MHz MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MC145220EVK 4.2-207 MC145220EVK Signal Plot -- Single Loop Mode PLL on 738 MHz MC145220EVK 4.2-208 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Chapter Five RF Discrete Transistors Section One . . . . . . . . . . . 5.1-0 RF Discrete Transistors - Selector Guide Section Two . . . . . . . . . . . 5.2-0 RF Discrete Transistors - Data Sheets MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 5.0-1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 5.0-2 Section One Selector Guide Motorola RF Discrete Transistors Motorola offers the most extensive group of RF Discrete Transistors offered by any semiconductor manufacturer anywhere in the world today. From Bipolar to FET, the user can choose from a variety of packages. They include plastic and ceramic that are microstrip circuit compatible or surface mountable. Many are designed for automated assembly equipment. Major sub-headings are Power MOSFETs, Power GaAs and Bipolar Transistors. Table of Contents Page RF Discrete Transistors . . . . . . . . . . . . . . . . . . . . . . . . . 5.1-1 RF High Power Transistors . . . . . . . . . . . . . . . . . . . . 5.1-2 RF Power MOSFETs . . . . . . . . . . . . . . . . . . . . . . 5.1-2 2 to 150 MHz HF/SSB . . . . . . . . . . . . . . . . . . . 5.1-2 2 to 225 MHz VHF AM/FM . . . . . . . . . . . . . . . 5.1-2 30 to 512 MHz VHF/UHF AM/FM . . . . . . . . . 5.1-2 Mobile - To 520 MHz . . . . . . . . . . . . . . . . . . . 5.1-3 Broadcast - To 1.0 GHz . . . . . . . . . . . . . . . . . 5.1-3 Cellular - To 1.0 GHz . . . . . . . . . . . . . . . . . . . 5.1-3 PCS and 3G - To 2.1 GHz . . . . . . . . . . . . . . . 5.1-4 RF Power GaAs Transistors . . . . . . . . . . . . . . . . 5.1-6 3.5 GHz Linear Transistors . . . . . . . . . . . . . . 5.1-6 RF Power Bipolar Transistors . . . . . . . . . . . . . . . 5.1-7 UHF Transistors . . . . . . . . . . . . . . . . . . . . . . . . 5.1-7 900 MHz Transistors . . . . . . . . . . . . . . . . . . . . 5.1-7 1.5 GHz Transistors . . . . . . . . . . . . . . . . . . . . 5.1-7 Microwave Transistors . . . . . . . . . . . . . . . . . . 5.1-8 Linear Transistors . . . . . . . . . . . . . . . . . . . . . . 5.1-8 RF LDMOS High Power Transistor Line-ups . . . . 5.1-9 Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.1-17 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA SELECTOR GUIDE 5.1-1 Motorola RF High Power Transistors RF Power MOSFETs Motorola RF Power MOSFETs are constructed using a planar process to enhance manufacturing repeatability. They are N-channel field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced thermal stability and lower noise. The FETs listed in this section are specified for operation in RF Power Amplifiers and are grouped by frequency range of operation and type of application. Arrangement within each group is first by order of voltage then by increasing output power. Table 1. 2 to 150 MHz HF/SSB - Vertical MOSFETs For military and commercial HF/SSB fixed, mobile and marine transmitters. Device MRF171A MRF148A MRF150 MRF154 MRF157 Frequency Freq ency Band(37) U U U U U 2-225 2-225 2-150 2-100 2-100 Poutt Watts VDD Volts Class Gain (Typ) @ 30 MHz dB 30 30 150 600 600 28 50 50 50 50 AB AB AB AB AB 20 18 17 17 20 Typical IMD d3 dB d11 dB JC C/W Package/Style - 32 - 35 - 32 - 25 - 25 -- - 60 - 60 -- -- 1.52 1.5 0.6 0.13 0.13 211-07/2 211-07/2 211-11/2 368/2 368/2 Table 2. 2 to 225 MHz VHF AM/FM - Vertical MOSFETs For VHF military and commercial aircraft radio transmitters. Device MRF134 MRF136 MRF171A MRF173 MRF174 MRF141 MRF141G MRF151 MRF151G Frequency Band(37) U U U U U U U U U 30-225 30-225 30-225 30-225 30-225 2-175 2-175 2-175 2-175 Pout Watts VDD Volts 5 15 45 80 125 150 300 150 300 28 28 28 28 28 28 28 50 50 Class Gain (Typ)/Freq. dB/MHz Eff. (Typ) % JC C/W AB AB AB AB AB AB AB AB AB 14/150 16/150 19.5/150 13/150 11.8/150 10/175 13/175 13/175 16/175 55 60 65 65 60 55 55 45 55 10 3.2 1.52 0.8 0.65 0.6 0.35 0.6 0.35 Eff. (Typ) % JC C/W 52 55 55 55 60 55 55 13.2 7.2 2.5 1.0 0.65 0.65 0.44 Package/Style 211-07/2 211-07/2 211-07/2 211-11/2 211-11/2 211-11/2 375/2 211-11/2 375/2 Table 3. 30 to 512 MHz VHF/UHF AM/FM - Vertical MOSFETs For VHF/UHF military and commercial aircraft radio transmitters. Device MRF158 MRF160 MRF166C MRF166W MRF177 MRF275L MRF275G Frequency Band(37) Pout Watts U U U U U U U 2 4 20 40 100 100 150 30-512 30-512 30-512 30-512 100-400 150-512 150-512 VDD Volts Class Gain (Typ)/Freq. dB/MHz 28 28 28 28 28 28 28 AB AB AB AB AB AB AB 17.5/500 17/500 16/500 16/500 12/400 8.8/500 11.2/500 Package/Style 305A/2 249/3 319/3 412/1 744A/2 333/2 375/2 (37)M = Matched Frequency Band; U = Unmatched Frequency Band. SELECTOR GUIDE 5.1-2 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA RF Power MOSFETs (continued) Table 4. Mobile - To 520 MHz Designed for broadband VHF & UHF commercial and industrial applications. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 12.5/7.5 volt mobile, portable and base station operation. Frequency Band(37) Device Pout Watts VDD Volts Gain (Typ)/Freq. dB/MHz Eff. (Typ) % JC C/W 55 55 55 55 50(Min) 50(Min) 2.0 2.0 4.0 2.0 0.90 0.75 Package/Style VHF & UHF, Land Mobile Radio, Class AB - LDMOS Die MRF1511T1(18f) MRF1517T1(18f) MRF1513T1(18f) MRF1518T1(18f) MRF1535T1(18j) MRF1550T1(18j) U U U U U U 136-175 430-520 400-520 400-520 400-520 136-175 8 8 3 8 35 50 7.5 7.5 7.5/12.5 12.5 12.5 12.5 11.5/175 11/520 11/520 11/520 10(Min)/520 10(Min)/175 466/1 466/1 466/1 466/1 1264/1 1264/1 Table 5. Broadcast - To 1.0 GHz - Lateral MOSFETs Frequency Band(37) Device Pout Watts VDD Volts Gain (Typ)/Freq. dB/MHz Eff. (Typ) % 32 32 32 32 32 50 18/860 18/860 17.3/860 17/860 18/860 16/860 60 60 41 36 40 50 JC C/W IMD dBc Package/Style -- -- -31 -35 -30 -- 360B/1 360C/1 375F/2 375G/2 375G/2 375G/2 470 - 1000 MHz, Class AB - LDMOS Die MRF373A(46a) MRF373AS(46a) MRF374A(46a) MRF372 MRF377(9) MRF376(9) U U U M M M 470-860 470-860 470-860 470-860 470-860 470-860 75 CW 75 CW 130 PEP 180 PEP 180 PEP 400 Pulsed 1.0 0.75 0.65 0.5 0.5 0.4 Table 6. Cellular - To 1.0 GHz - Lateral MOSFETs Frequency Band(37) Device Pout Watts Test Signal VDD Volts Gain (Typ)/Freq. dB/MHz Eff. (Typ) % JC C/W 2 PEP 30 PEP 30 PEP 30 PEP 45 PEP 45 PEP 45 PEP 60 PEP 60 PEP 60 PEP 70 CW 75 CW 75 CW 90 PEP 90 PEP 2-Tone 2-Tone 2-Tone 2-Tone 2-Tone 2-Tone 2-Tone 2-Tone 2-Tone 2-Tone 1-Tone 1-Tone 1-Tone 2-Tone 2-Tone 26 26 26 26 28 28 28 26 26 26 26 26 26 26 26 16/960 17/945 17/945 17/945 18.5/945 18.8/945 18.8/945 17/945 17/945 17/945 16/921,960 18.5/921,960 18.5/921,960 17.9/880 17.9/880 35 41 40 40 41 42 42 40 40 40 58 55 55 40 40 9 -- 1.9 1.5 0.8(50) 1.4 1.0 -- 1.1 0.8 1.1 0.7 0.7 0.7 0.7 Pkg/ Style 800 - 1.0 GHz, Class AB - LDMOS Die MRF9002R2(18e,46a) MRF9030MR1(18a,46b) MRF9030(46b) MRF9030S(18a,46b) MRF9045MR1(18a) MRF9045 MRF9045S(18a) MRF9060MR1(18a,46b) MRF9060(46a) MRF9060S(18a,46a) MRF6522-70(18i) MRF9080 MRF9080S MRF9085 MRF9085S U U U U U U U U U U M M M M M 960 945 945 945 945 945 945 945 945 945 921-960 921-960 921-960 880 880 978/- 1265/1 360B/1 360C/1 1265/1 360B/1 360C/1 1265/1 360B/1 360C/1 465D/1 465/1 465A/1 465/1 465A/1 (9)In development. (18)Tape and Reel Packaging Option Available by adding suffix: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units. (37)M = Matched Frequency Band; U = Unmatched Frequency Band. (46)To be introduced: a) 1Q01; b) 2Q01; c) 3Q01 (50)Simulated New Product MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA SELECTOR GUIDE 5.1-3 RF Power MOSFETs (continued) Table 6. Cellular - To 1.0 GHz - Lateral MOSFETs (continued) Frequency Band(37) Device Pout Watts Test Signal VDD Volts Gain (Typ)/Freq. dB/MHz Eff. (Typ) % JC C/W Pkg/ Style 2-Tone 2-Tone 2-Tone 2-Tone 26 26 26 26 16/880 16/880 17.5/880 17.5/880 39 39 39 39 0.7 0.7 0.45 0.45 375B/2 375H/2 375D/2 375E/2 VDD Volts Gain (Typ)/Freq. dB/MHz Eff. (Typ) % JC C/W Pkg/ Style 800 - 1.0 GHz, Class AB - LDMOS Die (continued) MRF9120(46a) MRF9120S(46a) MRF9180 MRF9180S M M M M 880 880 880 880 120 PEP 120 PEP 170 PEP 170 PEP Table 7. PCS and 3G - To 2.1 GHz - Lateral MOSFETs Frequency Band(37) Device Pout Watts Test Signal 1805 - 1990 MHz, Class AB - LDMOS Die (GSM1800, GSM1900, GSM EDGE and PCS TDMA) MRF18060A MRF18060AS MRF18060B MRF18060BS MRF18085A(46a) MRF18085AS(46a) MRF18085B(46a) MRF18085BS(46a) MRF18090A MRF18090AS MRF18090B MRF18090BS M M M M M M M M M M M M 1805-1880 1805-1880 1930-1990 1930-1990 1805-1880 1805-1880 1930-1990 1930-1990 1805-1880 1805-1880 1930-1990 1930-1990 60 CW 60 CW 60 CW 60 CW 85 CW 85 CW 85 CW 85 CW 90 CW 90 CW 90 CW 90 CW 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 1-Tone 26 26 26 26 26 26 26 26 26 26 26 26 13/1805,1880 13/1805,1880 13/1930,1990 13/1930,1990 13/1805,1880 13/1805,1880 13/1930,1990 13/1930,1990 13.5/1805,1880 13.5/1805,1880 13.5/1930,1990 13.5/1930,1990 45 45 45 45 52 53 53 52 52 52 45 45 0.97 0.97 0.97 0.97 0.64 0.64 0.64 0.64 0.7 0.7 0.7 0.7 465/1 465A/1 465/1 465A/1 465/1 465A/1 465/1 465A/1 465B/1 465C/1 465B/1 465C/1 2-Tone 2-Tone N-CDMA N-CDMA 2-Tone 2-Tone 2-Tone 2-Tone N-CDMA N-CDMA 2-Tone 2-Tone N-CDMA N-CDMA 26 26 26 26 26 26 26 26 26 26 26 26 26 26 13/1990 13/1990 14.5/1990 14.5/1990 12.5/1990 12.5/1990 11.5/1990 11.5/1990 13/1990 13/1990 11.7/1990 11.7/1990 13.5/1990 13.5/1990 36 36 23.5 23.5 36 36 35 35 23 23 34 34 22 22 2.1 2.1 1.97 1.97 0.97 0.97 0.65 0.65 0.64 0.64 0.45 0.45 0.53 0.53 465E/1 465F/1 465E/1 465F/1 465/1 465A/1 465B/1 465C/1 465/1 465A/1 375D/2 375E/2 465B/1 465C/1 1.9 GHz, Class AB - LDMOS Die (2-CH N-CDMA) MRF19030 MRF19030S MRF19045(46a) MRF19045S(46a) MRF19060 MRF19060S MRF19090 MRF19090S MRF19085 MRF19085S MRF19120(3) MRF19120S(3) MRF19125 MRF19125S M M M M M M M M M M M M M M 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 1930-1990 30 PEP 30 PEP 9.5 AVG 9.5 AVG 60 PEP 60 PEP 90 PEP 90 PEP 18 AVG 18 AVG 120 PEP 120 PEP 24 AVG 24 AVG (3)Internal Impedance Matched Push-Pull Transistors (18)Tape and Reel Packaging Option Available by adding suffix: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units. (37)M = Matched Frequency Band; U = Unmatched Frequency Band. (46)To be introduced: a) 1Q01; b) 2Q01; c) 3Q01 New Product SELECTOR GUIDE 5.1-4 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA RF Power MOSFETs (continued) Table 7. PCS and 3G - To 2.1 GHz - Lateral MOSFETs (continued) Frequency Band(37) Device Pout Watts Test Signal VDD Volts Gain (Typ)/Freq. dB/MHz Eff. (Typ) % JC C/W Pkg/ Style 4 PEP 4 PEP 10 PEP 10 PEP 30 PEP 30 PEP 60 PEP 60 PEP 2-Tone 2-Tone 2-Tone 2-Tone 2-Tone 2-Tone 2-Tone 2-Tone 26 26 26 26 26 26 26 26 12.5/2000 12.5/2000 11.5/2000 11.5/2000 10.5/2000 10.5/2000 10.5/2000 10.5/2000 33 33 28(min) 28(min) 35 35 32 32 5.74 5.74 4.2 4.2 2.0 2.0 0.73 0.73 458B/1 458C/1 458B/1 458C/1 360B/1 360C/1 465/1 465A/1 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 13.5/2170 13.5/2170 13/2170 13/2170 15/2170 15/2170 12.5/2170 12.5/2170 13.6/2170 13.6/2170 11.7/2170 11.7/2170 11.4/2170 11.2/2170 13/2170 13/2170 12.5/2170 12.5/2170 35 35 33 33 23.5 23.5 34 34 23 23 33 33 34.5 34.5 18 18 22 22 5.5 5.5 2.1 2.1 1.97 1.97 1.02 1.02 0.64 0.64 0.65 0.65 0.45 0.45 0.53 0.53 0.39 0.39 360B/1 360C/1 465E/1 465F/1 465E/1 465F/1 465/1 465A/1 465/1 465A/1 465B/1 465C/1 375D/2 375E/2 465B/1 465C/1 375D/2 375E/2 2.0 GHz, Class A, AB - LDMOS Die MRF281SR1(18a) MRF281ZR1(18a) MRF282SR1(18a) MRF282ZR1(18a) MRF284 MRF284SR1(18a) MRF286(46a) MRF286S(46a) U U U U U U M M 1930-2000 1930-2000 1930-2000 1930-2000 1930-2000 1930-2000 1930-2000 1930-2000 2.1 GHz, Class AB - LDMOS Die (2-CH W-CDMA, UMTS) MRF21010 MRF21010S(46a) MRF21030 MRF21030S MRF21045 MRF21045S MRF21060 MRF21060S MRF21085 MRF21085S MRF21090 MRF21090S MRF21120(3) MRF21120S(3) MRF21125 MRF21125S MRF21180(3,46a) MRF21180S(3,46a) U U M M M M M M M M M M M M M M M M 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 2110-2170 10 PEP 10 PEP 30 PEP 30 PEP 10 AVG 10 AVG 60 PEP 60 PEP 19 AVG 19 AVG 90 PEP 90 PEP 120 PEP 120 PEP 20 AVG 20 AVG 38 AVG 38 AVG 2-Tone 2-Tone 2-Tone 2-Tone W-CDMA W-CDMA 2-Tone 2-Tone W-CDMA W-CDMA 2-Tone 2-Tone 2-Tone 2-Tone W-CDMA W-CDMA W-CDMA W-CDMA (3)Internal Impedance Matched Push-Pull Transistors (18)Tape and Reel Packaging Option Available by adding suffix: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units. (37)M = Matched Frequency Band; U = Unmatched Frequency Band. (46)To be introduced: a) 1Q01; b) 2Q01; c) 3Q01 New Product MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA SELECTOR GUIDE 5.1-5 RF Power GaAs Transistors Motorola power GaAs transistors are made using an InGaAs PHEMT epitaxial structure for superior RF efficiency and linearity. The FETs listed in this section are designed for operation in base station infrastructure RF power amplifiers and are grouped according to frequency range and type of application. Parts are listed first by order of operating voltage, then by increasing output power. Table 1. 3.5 GHz - Linear Transistors Frequency Band(37) Device Pout Watts Test Signal VDD Volts Gain (Typ)/Freq. dB/GHz Eff. (Typ) % JC C/W W-CDMA W-CDMA 12 12 10/3.5 10/3.5 26 24 6 -- Pkg/ Style 3.5 GHz, Class AB - GaAs (WLL, BWA, W-CDMA) MRFG35010(9) MRFG35030(9) U M 3.5 G 3.5 G 1 AVG 4 AVG -- -- (9)In development. SELECTOR GUIDE 5.1-6 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA RF Power Bipolar Transistors Motorola's broad line of bipolar RF power transistors are characterized for operation in RF power amplifiers. Typical applications are in base stations, military and commercial landmobile, avionics and marine radio transmitters. Groupings are by frequency band and type of application. Within each group, the arrangement of devices is by major supply voltage rating, then in the order of increasing output power. All devices are NPN polarity except where otherwise noted. UHF Transistors Table 1. 100 - 500 MHz Band Designed for UHF military and commercial aircraft radio transmitters. Frequency Band(37) Device Pout Watts Gain (Min)/Freq. dB/MHz JC C/W 125 100 8/400 7.5/500 0.65 0.65 Package/Style VCC = 28 Volts, Class C MRF392(3) MRF393(3) M M 100-400 100-512 744A/1 744A/1 900 MHz Transistors Table 2. 900 - 960 MHz Band Designed specifically for the 900 MHz mobile radio band, these devices offer superior gain, ruggedness, stability and broadband operation. Devices are for mobile and base station applications. Frequency Band(37) Device JC C/W Pout Watts Class Gain (Min)/Freq. dB/MHz 3.6 CW 30 30 60 CW A AB AB C 11/900 10/900 10.5/900 7/900 6.9 1.7 1.7 1 319A/2 395B/1 395E/1 333A/1 20 50 150 AB AB AB 10/960 8.5/960 8/900 3.8 1.3 0.8 319/2 333A/2 375A/1 Package/Style VCC = 24 Volts -- Si Bipolar MRF858S MRF897(3) MRF897R(3) MRF898(2) U M M M 840-900 900 900 850-900 VCC = 26 Volts -- Si Bipolar MRF6409 MRF6414 MRF899(3) M M M 921-960 921-960 900 1.5 GHz Transistors Table 3. 1600 - 1640 MHz Band Frequency Band(37) Device MRF16006 MRF16030 M M 1600-1640 1600-1640 Pout Watts Class Gain (Min)/Freq. dB/MHz Eff. (Min) % 6 30 C C 7.4/1600 7.5/1600 40 40 JC C/W 6.8 1.7 Package/Style 395C/2 395C/2 (2)Internal Impedance Matched (3)Internal Impedance Matched Push-Pull Transistors (37)M = Matched Frequency Band; U = Unmatched Frequency Band. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA SELECTOR GUIDE 5.1-7 Microwave Transistors Table 4. L-Band Long Pulse Power These products are designed for pulse power amplifier applications in the 960 - 1215 MHz frequency range. They are capable of handling up to 10 s pulses in long pulse trains resulting in up to a 50% duty cycle over a 3.5 millisecond interval. Overall duty cycle is limited to 25% maximum. The primary applications for devices of this type are military systems, specifically JTIDS and commercial systems, specifically Mode S. Package types are hermetic. Frequency Band(37) Device Pout Watts Gain (Min) @ 1215 MHz dB JC C/W 5 8.5 8 336E/1 30 120 10 8 3 0.6 376B/1 355C/1 150 350 500 10(7) 9(7) 9(7) 0.25 0.11 0.12 376B/1 355E/1 355J/1 Package/Style VCC = 28 Volts -- Class C Common Base MRF10005 M 960-1215 VCC = 36 Volts -- Class C Common Base MRF10031 MRF10120 M M 960-1215 960-1215 VCC = 50 Volts -- Class C Common Base MRF10150 MRF10350 MRF10502 M M M 1025-1150 1025-1150 1025-1150 Linear Transistors The following sections describe a wide variety of devices specifically characterized for linear amplification. Included are medium power and high power parts covering frequencies to 2.0 GHz. Table 5. UHF Ultra Linear For TV Applications The following device has been characterized for ultra-linear applications such as low-power TV transmitters in Band IV and Band V and features diffused ballast resistors and an all-gold metal system to provide enhanced reliability and ruggedness. Pout Watts Gain (Typ)/Freq. Small Signal Gain dB/MHz JC C/W 100(11) 9.5/860 0.7 Frequency Band(37) Device Package/Style VCC = 28 Volts, Class AB TPV8100B M 470-860 398/1 Table 6. Microwave Linear for PCN Applications The following devices have been developed for linear amplifiers in the 1.5 - 2 GHz region and have characteristics particularly suitable for PDC, PCS or DCS1800 base station applications. Frequency Band(37) Device Pout Watts Class Gain (Typ)/Freq. dB/MHz JC C/W AB AB AB AB 8.2/1880 11/2000 9.8/2000 9.8/2000 1.4 1.4 0.7 0.7 Package/Style VCC = 26 Volts-Bipolar Die MRF6404(16) MRF20030R MRF20060R MRF20060RS M M M M 1860-1900 2000 2000 2000 30 30 60 60 395C/1 395C/1 451/1 451A/1 (7)Typical @ 1090 MHz (11)Output power at 1 dB compression in Class AB (16)Formerly known as "TP4035" (37)M = Matched Frequency Band; U = Unmatched Frequency Band. SELECTOR GUIDE 5.1-8 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA RF LDMOS High Power Transistor Amplifier Line-ups MRF1513T1 3W 250 mW MRF1513T1 MRF1535T1 35 W 250 mW Mobile - UHF MRF1511T1 8W 750 mW MRF1511T1 MRF1550T1 100 W 750 mW Mobile - VHF MRF1518T1 8W 750 mW Mobile - UHF MRF1518T1 MRF1550T1 50 W 500 mW Mobile - VHF MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA SELECTOR GUIDE 5.1-9 RF LDMOS High Power Transistor Amplifier Line-ups 4 MRF372 1 * * * 8 MRF374A 130 W 2.1 W (continued) 4 5760 W MRF372 Broadcast - 470 MHz - 860 MHz 4 MRF373A MRF373AS 1.2 W MRF373A MRF373AS 1 * * * 16 130 W 4 4800 W 1.4 W MRF374A 1 * * * 8 130 W MRF374A 4160 W MRF373A MRF373AS 4 MRF373A MRF373AS Broadcast - 470 - 860 MHz SELECTOR GUIDE 5.1-10 4 MRF374A Broadcast - 470 - 860 MHz MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA RF LDMOS High Power Transistor Amplifier Line-ups (continued) GSM EDGE - 900 MHz 16 dB 17 dB 18.5 dB MRF9002R2 MRF9030/S MRF9080/S Pin Amp1 Amp2 Amp3 Pout 0.602 mW MRF9002R2 MRF9030/S MRF9080/S 75 W Cellular - 1.0 GHz 16 dB 17.5 dB MRF9002R2 MRF9180/S Pin Amp1 Amp2 Pout 80 mW MRF9002R2 MRF9180/S 170 W GSM1800, GSM1900, GSM EDGE and PCS TDMA - 1.8 - 1.9 GHz 13.5 dB 11.5 dB MRF21010/S MRF282SR1 MRF282ZR1 13 dB MRF19030/S 13 dB 13.5 dB MRF18085A MRF18085B MRF18090A MRF18090B Pin Amp1 Amp2 Amp3 Pout 9.5 mW MRF21010/S MRF19030/S MRF18085A 85 W 9.0 mW MRF21010/S MRF19030/S MRF18090A 90 W 9.5 mW MRF21010/S MRF19030/S MRF18085B 85 W 9.0 mW MRF21010/S MRF19030/S MRF18090B 90 W 15 mW MRF282SR1/ZR1 MRF19030/S MRF18085A 85 W 14.2 mW MRF282SR1/ZR1 MRF19030/S MRF18090A 90 W 15 mW MRF282SR1/ZR1 MRF19030/S MRF18085B 85 W 14.2 mW MRF282SR1/ZR1 MRF19030/S MRF18090B 90 W MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA SELECTOR GUIDE 5.1-11 RF LDMOS High Power Transistor Amplifier Line-ups (continued) 2-CH N-CDMA - 1.9 GHz 13 dB MRF19030/S MRF19045/S 11.7 dB MRF19120/S MRF19125/S Pin Amp1 Amp2 Pout 406 mW MRF19030/S MRF19120/S 120 W 406 mW MRF19045/S MRF19125/S 120 W 2-CH W-CDMA, UMTS - 2.1 GHz 13 dB 12.5 dB MRF21030/S SELECTOR GUIDE 5.1-12 MRF21180/S Pin Amp1 Amp2 Pout 500 mW MRF21030/S MRF21180/S 180 W MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA RF LDMOS High Power Transistor Amplifier Line-ups (continued) GSM1800, GSM1900 Base Station - Class 1: 30 - 90 Watts, 24 - 26 Volts 60 - 90 W Output 24 dB 13 dB 13 dB 13.5 dB MHW1810-1 MHW1910-1 MRF18060A MRF18060B MRF18085A MRF18085B MRF18090A MRF18090B Pin Amp1 Amp2 Pout 12 mW MHW1810-1 MRF18060A 60 W 17 mW MHW1810-1 MRF18085A 85 W 16 mW MHW1810-1 MRF18090A 90 W 12 mW MHW1910-1 MRF18060B 60 W 17 mW MHW1910-1 MRF18085B 85 W 16 mW MHW1910-1 MRF18090B 90 W 30 - 40 W Output 24 dB 10.5 dB MHW1810-1 MHW1910-1 MRF284 MRF284SR1 13 dB 14 dB MRF19030/S MRF19045/S Pin Amp1 Amp2 Pout 10.6 mW MHW1810-1 MRF284/SR1 30 W 6.0 mW MHW1810-1 MRF19030/S 30 W 7.13 mW MHW1810-1 MRF19045/S 45 W 10.6 mW MHW1910-1 MRF284/SR1 30 W 6.0 mW MHW1910-1 MRF19030/S 30 W 7.13 mW MHW1910-1 MRF19045/S 45 W MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA SELECTOR GUIDE 5.1-13 RF LDMOS High Power Transistor Amplifier Line-ups (continued) GSM1800, GSM1900 Base Station - Class 2: 30 - 45 Watts, 24 - 26 Volts 30 W Output 24 dB 10.5 dB MHW1810-1 MHW1910-1 MRF284 MRF284SR1 Pin Amp1 Amp2 Pout 10.6 mW MHW1810-1 MRF284/SR1 30 W 10.6 mW MHW1910-1 MRF284/SR1 30 W 30 W Output 12.5 dB 11.5 dB MRF281SR1 MRF281ZR1 Pin 10.5 dB MRF282SR1 MRF282ZR1 Amp1 MRF284 MRF284SR1 Amp3 Amp2 10.6 mW MRF281SR1/ZR1 MRF282SR1/ZR1 MRF284/SR1 Pout 30 W 30 - 45 W Output SELECTOR GUIDE 5.1-14 13.5 dB 13 dB 14 dB MRF21010/S MRF19030/S MRF19045/S Pin Amp1 Amp2 Pout 67 mW MRF21010/S MRF19030/S 30 W 80 mW MRF21010/S MRF19045/S 45 W MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA RF LDMOS High Power Transistor Amplifier Line-ups (continued) GSM1800, GSM1900 Base Station - Class 3: 5 - 10 Watts, 24 - 26 Volts Microcell 24 dB MHW1810-1 MHW1910-1 Pin Amp1 Pout 40 mW MHW1810-1 10 W 40 mW MHW1910-1 10 W 12.5 dB MRF281SR1 MRF281ZR1 13.5 dB 11.5 dB MRF21010/S MRF282SR1 MRF282ZR1 Pin Amp1 Amp2 Pout 25 mW MRF281SR1/ZR1 MRF21010/S 10 W 40 mW MRF281SR1/ZR2 MRF282SR1/ZR2 10 W GSM900 Base Station - Class 4: 85 - 120 Watts, 24 - 26 Volts 16 dB 39 dB 17.9 dB 16 dB MRF9002R2 MHVIC910HR2 MRF9085/S MRF9120/S Pin Amp1 Amp2 Pout 37 mW MRF9002R2 MRF9085/S 90 W 76 mW MRF9002R2 MRF9120/S 120 W 0.183 mW MHVIC910HR2 MRF9085/S 90 W 0.379 mW MHVIC910HR2 MRF9120/S 120 W MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA SELECTOR GUIDE 5.1-15 RF LDMOS High Power Transistor Amplifier Line-ups (continued) GSM900 Base Station - Class 5: 60 - 70 Watts, 24 - 26 Volts 16 dB 39 dB 16 dB 17 dB MRF9002R2 MHVIC910HR2 MRF6522-70 MRF9060/S Pin Amp1 Amp2 Pout 44 mW MRF9002R2 MRF6522-70 70 W 30 mW MRF9002R2 MRF9060/S 60 W 0.221 mW MHVIC910HR2 MRF6522-70 70 W 0.151 mW MHVIC910HR2 MRF9060/S 60 W GSM900 Base Station - Class 7: 5 - 10 Watts, 24 - 26 Volts SELECTOR GUIDE 5.1-16 16 dB 39 dB MRF9002R2 MHVIC910HR2 Pin Amp1 Pout 252 mW MRF9002R2 10 W 1.3 mW MHVIC910HR2 10 W MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA RF Power MOSFETs and Bipolar Transistors Packages CASE 211-07 STYLE 2 (.380 FLANGE) CASE 211-11 STYLE 2 (.500 FLANGE) CASE 319 STYLE 2, 3 (CS-12) CASE 333A STYLE 1, 2 (MAAC PAC) CASE 355J-02 STYLE 1 CASE 375 STYLE 2 CASE 249 STYLE 3 (.280 PILL) CASE 333 STYLE 2 CASE 319A STYLE 2 CASE 336E STYLE 1 CASE 355C STYLE 1 CASE 360B STYLE 1 (Micro 250) CASE 375A STYLE 1 CASE 305A STYLE 2 (.204 PILL) CASE 360C STYLE 1 (Micro 250S) CASE 375B STYLE 2 (Micro 860) CASE 355E STYLE 1 CASE 368 STYLE 2 (HOG PAC) CASE 375D STYLE 2 SCALE 1:1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA SELECTOR GUIDE 5.1-17 CASE 375E STYLE 2 CASE 376B STYLE 1 CASE 458B STYLE 1 (Micro 200S) SELECTOR GUIDE 5.1-18 CASE 395B STYLE 1 CASE 395C STYLE 1, 2 CASE 395E STYLE 1 CASE 451A STYLE 1 CASE 465 STYLE 1 CASE 465C STYLE 1 CASE 466 STYLE 1 PLASTIC (PLD 1.5) CASE 375H STYLE 2 CASE 451 STYLE 1 CASE 458C STYLE 1 (Micro 200Z) CASE 465B STYLE 1 SCALE 1:1 CASE 375G STYLE 2 CASE 412 STYLE 1 CASE 398 STYLE 1 CASE 465F STYLE 1 CASE 375F STYLE 2 CASE 465A STYLE 1 CASE 465D STYLE 1 CASE 744A STYLE 1, 2 CASE 978 CASE 465E STYLE 1 CASE 1264 PLASTIC (TO-272) STYLE 1 CASE 1265 PLASTIC (TO-270) STYLE 1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Section Two Motorola RF Discrete Transistors - Data Sheets Device Number Page Number Device Number Page Number MRF134 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-3 MRF373 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-258 MRF136 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-12 MRF373S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-258 MRF141 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-22 MRF374 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-267 MRF141G . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-31 MRF392 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-275 MRF148A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-39 MRF393 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-278 MRF150 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-44 MRF858S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-281 MRF151 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-51 MRF897 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-286 MRF151G . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-58 MRF897R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-290 MRF154 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-66 MRF898 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-295 MRF157 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-72 MRF899 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-298 MRF158 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-78 MRF1511T1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-303 MRF160 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-93 MRF1513T1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-313 MRF166C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-101 MRF1517T1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-325 MRF166W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-109 MRF1518T1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-337 MRF171A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-118 MRF1535T1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-349 MRF173 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-129 MRF1550T1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-359 MRF174 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-136 MRF6404 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-368 MRF177 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-144 MRF6409 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-377 MRF181SR1, MRF181ZR1 . . . . . . . . . . . . . . . . . . . . 5.2-152 MRF6414 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-382 MRF182 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-160 MRF6522-10R1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-387 MRF182S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-160 MRF6522-70 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-394 MRF182SR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-160 MRF6522-70R3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-394 MRF183 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-166 MRF9045 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-401 MRF183S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-166 MRF9045S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-401 MRF183SR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-166 MRF9045SR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-401 MRF184 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-175 MRF9045MR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-408 MRF184S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-175 MRF9080 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-414 MRF184SR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-175 MRF9080S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-414 MRF185 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-183 MRF9085 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-420 MRF186 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-185 MRF9085S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-420 MRF187 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-192 MRF9180 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-426 MRF187S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-192 MRF9180S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-426 MRF275G . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-198 MRF10005 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-434 MRF275L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-213 MRF10031 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-437 MRF281SR1, MRF281ZR1 . . . . . . . . . . . . . . . . . . . . 5.2-225 MRF10120 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-440 MRF282SR1, MRF282ZR1 . . . . . . . . . . . . . . . . . . . . 5.2-229 MRF10150 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-443 MRF284 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-236 MRF10350 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-446 MRF284SR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-236 MRF10502 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-449 MRF372 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-247 MRF16006 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-452 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA DATA SHEETS 5.2-1 Device Number Page Number Device Number Page Number MRF16030 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-456 MRF19125S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-516 MRF18060A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-460 MRF20030R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-524 MRF18060AS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-460 MRF20060R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-531 MRF18060B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-466 MRF20060RS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-531 MRF18060BS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-466 MRF21010 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-538 MRF18090A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-472 MRF21030 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-543 MRF18090AS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-472 MRF21030S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-543 MRF18090B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-478 MRF21045 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-548 MRF18090BS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-478 MRF21045S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-548 MRF19030 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-484 MRF21060 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-556 MRF19030S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-484 MRF21060S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-556 MRF19060 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-489 MRF21085 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-562 MRF19060S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-489 MRF21085S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-562 MRF19085 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-495 MRF21090 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-570 MRF19085S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-495 MRF21090S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-570 MRF19090 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-503 MRF21120 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-575 MRF19090S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-503 MRF21120S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-575 MRF19120 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-509 MRF21125 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-582 MRF19120S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-509 MRF21125S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-582 MRF19125 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-516 TPV8100B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2-589 DATA SHEETS 5.2-2 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MRF134 . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. * Guaranteed 28 Volt, 150 MHz Performance Output Power = 5.0 Watts Minimum Gain = 11 dB Efficiency -- 55% (Typical) 5.0 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER FET * Small-Signal and Large-Signal Characterization * Typical Performance at 400 MHz, 28 Vdc, 5.0 W Output = 10.6 dB Gain * 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR * Low Noise Figure -- 2.0 dB (Typ) at 200 mA, 150 MHz * Excellent Thermal Stability, Ideally Suited For Class A Operation D G CASE 211-07, STYLE 2 S MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Drain-Gate Voltage (RGS = 1.0 M) VDGR 65 Vdc VGS 40 Vdc Drain Current -- Continuous ID 0.9 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 17.5 0.1 Watts W/C Storage Temperature Range Tstg - 65 to +150 C Symbol Value Unit RJC 10 C/W Gate-Source Voltage THERMAL CHARACTERISTICS Rating Thermal Resistance, Junction to Case Handling and Packaging -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 6 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF134 5.2-3 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) IDSS -- -- 1.0 mAdc Gate-Source Leakage Current (VGS = 20 V, VDS = 0) IGSS -- -- 1.0 Adc VGS(th) 1.0 3.5 6.0 Vdc gfs 80 110 -- mmhos Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Ciss -- 7.0 -- pF Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Coss -- 9.7 -- pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Crss -- 2.3 -- pF Noise Figure (VDS = 28 Vdc, ID = 200 mA, f = 150 MHz) NF -- 2.0 -- dB Common Source Power Gain (VDD = 28 Vdc, Pout = 5.0 W, IDQ = 50 mA) f = 150 MHz (Fig. 1) f = 400 MHz (Fig. 14) Gps OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 5.0 mA) ON CHARACTERISTICS Gate Threshold Voltage (ID = 10 mA, VDS = 10 V) Forward Transconductance (VDS = 10 V, ID = 100 mA) DYNAMIC CHARACTERISTICS FUNCTIONAL CHARACTERISTICS Drain Efficiency (Fig. 1) (VDD = 28 Vdc, Pout = 5.0 W, f = 150 MHz, IDQ = 50 mA) Electrical Ruggedness (Fig. 1) (VDD = 28 Vdc, Pout = 5.0 W, f = 150 MHz, IDQ = 50 mA, VSWR 30:1 at all Phase Angles) dB 11 -- 14 10.6 -- -- 50 55 -- % No Degradation in Output Power L4 R3* R4 D1 + C7 + C8 L3 R2 C5 - R5 C10 VDD = 28 V C11 C9 C12 C6 C4 R1 RF OUTPUT L2 L1 RF INPUT C3 DUT C1 C2 *Bias Adjust C1, C4 -- Arco 406, 15 - 115 pF C2 -- Arco 403, 3.0 - 35 pF C3 -- Arco 402, 1.5 - 20 pF C5, C6, C7, C8, C12 -- 0.1 F Erie Redcap C9 -- 10 F, 50 V C10, C11 -- 680 pF Feedthru D1 -- 1N5925A Motorola Zener L1 -- 3 Turns, 0.310 ID, #18 AWG Enamel, 0.2 Long L2 -- 3-1/2 Turns, 0.310 ID, #18 AWG Enamel, 0.25 Long L3 -- 20 Turns, #20 AWG Enamel Wound on R5 L4 -- Ferroxcube VK-200 -- 19/4B R1 -- 68 , 1.0 W Thin Film R2 -- 10 k, 1/4 W R3 -- 10 Turns, 10 k Beckman Instruments 8108 R4 -- 1.8 k, 1/2 W R5 -- 1.0 M, 2.0 W Carbon Board -- G10, 62 mils Figure 1. 150 MHz Test Circuit MRF134 5.2-4 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 5 f = 100 MHz 150 225 400 8 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 10 6 4 2 0 VDD = 28 V IDQ = 50 mA 0 200 400 600 Pin, INPUT POWER (MILLWATTS) 800 4 150 225 3 400 2 1 0 1000 f = 100 MHz VDD = 13.5 V IDQ = 50 mA 0 Figure 2. Output Power versus Input Power 8 Pin = 600 mW 300 mW 6 150 mW 4 2 0 12 IDQ = 50 mA f = 100 MHz 14 16 18 20 22 24 VDD, SUPPLY VOLTAGE (VOLTS) 26 1000 Pin = 800 mW 400 mW 4 200 mW 2 IDQ = 50 mA f = 150 MHz 0 12 28 14 16 18 20 22 24 VDD, SUPPLY VOLTAGE (VOLTS) 26 28 Figure 5. Output Power versus Supply Voltage 8 8 Pin = 800 mW Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 800 6 Figure 4. Output Power versus Supply Voltage 6 400 mW 4 200 mW 2 IDQ = 50 mA f = 225 MHz 0 12 400 600 Pin, INPUT POWER (MILLWATTS) Figure 3. Output Power versus Input Power Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 8 200 14 16 18 20 22 24 VDD, SUPPLY VOLTAGE (VOLTS) 26 28 Pin = 800 mW IDQ = 50 mA f = 400 MHz 6 400 mW 4 200 mW 2 0 12 Figure 6. Output Power versus Supply Voltage MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 14 16 18 20 22 24 VDD, SUPPLY VOLTAGE (VOLTS) 26 28 Figure 7. Output Power versus Supply Voltage MRF134 5.2-5 500 VDD = 28 V IDQ = 50 mA Pin = CONSTANT 5 I D, DRAIN CURRENT (MILLAMPS) Pout , OUTPUT POWER (WATTS) 6 f = 400 MHz 4 150 MHz 3 2 1 TYPICAL DEVICE SHOWN, VGS(th) = 3.5 V 0 -2 -1 1 2 3 0 VGS, GATE-SOURCE VOLTAGE (VOLTS) 4 300 200 TYPICAL DEVICE SHOWN, VGS(th) = 3.5 V 100 0 5 VDS = 10 V 400 0 VDD = 28 V IDQ = 200 mA 1 8 0.98 100 mA 0.96 50 mA 0.94 0.92 0.9 - 25 0 25 50 75 100 TC, CASE TEMPERATURE (C) 125 40 20 10 0 150 |S21|2 GMAX = (1 - |S11|2) (1 - |S22|2) 30 VDS = 28 V ID = 100 mAdc 1 Figure 10. Gate-Source Voltage versus Case Temperature 10 100 f, FREQUENCY (MHz) 1000 Figure 11. Maximum Available Gain versus Frequency 1 28 I D, DRAIN CURRENT (AMPS) VGS = 0 V f = 1 MHz 24 C, CAPACITANCE (pF) 7 50 1.02 20 16 12 Coss 8 Ciss 4 Crss 0 2 3 4 5 6 VGS, GATE-SOURCE VOLTAGE (VOLTS) Figure 9. Drain Current versus Gate Voltage (Transfer Characteristics) G MAX, MAXIMUM AVAILABLE GAIN (dB) VGS, GATE-SOURCE VOLTAGE (NORMALIZED) Figure 8. Output Power versus Gate Voltage 1 0 4 8 12 16 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 24 Figure 12. Capacitance versus Voltage MRF134 5.2-6 28 0.7 0.5 0.3 0.2 TC = 25C 0.1 0.07 0.05 0.03 0.02 0.01 1 2 5 10 20 50 70 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 100 Figure 13. Maximum Rated Forward Biased Safe Operating Area MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA L2 R3* R4 C11 + C9 D1 C10 VDD = 28 V C12 C13 C14 - L1 R2 C7 Z4 C8 Z5 C6 RF OUTPUT R1 C1 Z1 Z2 Z3 RF INPUT C4 DUT C2 C5 C3 *Bias Adjust R2 -- 10 k, 1/4 W R3 -- 10 Turns, 10 k Beckman Instruments 8108 R4 -- 1.8 k, 1/2 W Z1 -- 1.4 x 0.166 Microstrip Z2 -- 1.1 x 0.166 Microstrip Z3 -- 0.95 x 0.166 Microstrip Z4 -- 2.2 x 0.166 Microstrip Z5 -- 0.85 x 0.166 Microstrip Board -- Glass Teflon, 62 mils C1, C6 -- 270 pF, ATC 100 mils C2, C3, C4, C5 -- 0-20 pF Johanson C7, C9, C10, C14 -- 0.1 F Erie Redcap, 50 V C8 -- 0.001 F C11 -- 10 F, 50 V C12, C13 -- 680 pF Feedthru D1 -- 1N5925A Motorola Zener L1 -- 6 Turns, 1/4 ID, #20 AWG Enamel L2 -- Ferroxcube VK-200 -- 19/4B R1 -- 68 , 1.0 W Thin Film Figure 14. 400 MHz Test Circuit 400 VDD = 28 V, IDQ = 50 mA, Pout = 5.0 W Zo = 50 225 Zin{ 150 400 f = 100 MHz 225 150 f MHz Zin{ Ohms ZOL* Ohms 100 150 225 400 21.2 - j25.4 14.6 - j22.1 9.1 - j18.8 6.4 - j10.8 20.1 - j46.7 19.2 - j38.2 17.5 - j33.5 16.9 - j26.9 {68 Shunt Resistor Gate-to-Ground ZOL* f = 100 MHz ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a ZOL* = given output power, voltage and frequency. Figure 15. Large-Signal Series Equivalent Input/Output Impedances, Zin, ZOL* MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF134 5.2-7 S11 S21 S12 f (MHz) |S11| |S21| 1.0 0.989 - 1.0 11.27 179 2.0 0.989 - 2.0 11.27 5.0 0.988 - 5.0 10 0.985 20 0.977 30 S22 |S22| 0.0014 89 0.954 - 1.0 179 0.0028 89 0.954 - 2.0 11.26 176 0.0069 86 0.954 - 4.0 - 10 11.20 173 0.014 83 0.951 - 9.0 - 20 10.99 166 0.027 76 0.938 - 18 0.965 - 30 10.66 159 0.039 69 0.918 - 26 40 0.950 - 39 10.25 153 0.051 63 0.895 - 34 50 0.931 - 47 9.777 147 0.060 57 0.867 - 42 60 0.912 - 53 9.359 142 0.069 53 0.846 - 49 70 0.892 - 58 8.960 138 0.077 49 0.828 - 56 80 0.874 - 62 8.583 135 0.085 46 0.815 - 62 90 0.855 - 66 8.190 131 0.091 43 0.801 - 68 100 0.833 - 70 7.808 128 0.096 40 0.785 - 74 |S12| 110 0.827 - 73 7.661 125 0.101 38 0.784 - 77 120 0.821 - 76 7.515 122 0.107 36 0.784 - 82 130 0.814 - 79 7.368 119 0.113 34 0.784 - 85 140 0.808 - 82 7.222 116 0.119 32 0.783 - 88 150 0.802 - 86 7.075 114 0.125 31 0.783 - 90 160 0.788 - 89 6.810 112 0.127 30 0.780 - 92 170 0.774 - 92 6.540 110 0.128 28 0.774 - 94 180 0.763 - 94 6.220 108 0.130 26 0.762 - 98 190 0.751 - 97 5.903 106 0.132 24 0.760 - 100 200 0.740 - 100 5.784 104 0.134 23 0.758 - 103 225 0.719 - 104 5.334 100 0.136 20 0.757 - 107 250 0.704 - 108 4.904 97 0.139 19 0.758 - 110 275 0.687 - 113 4.551 92 0.141 16 0.757 - 114 300 0.673 - 117 4.219 89 0.141 14 0.750 - 117 325 0.668 - 120 3.978 86 0.142 12 0.757 - 120 350 0.669 - 123 3.737 83 0.142 10 0.766 - 121 375 0.662 - 125 3.519 80 0.143 9.0 0.768 - 123 400 0.654 - 127 3.325 77 0.142 8.0 0.772 - 124 425 0.650 - 129 3.170 75 0.140 7.0 0.772 - 125 450 0.638 - 131 3.048 72 0.141 6.0 0.783 - 125 475 0.614 - 132 2.898 71 0.136 6.0 0.786 - 126 500 0.641 - 133 2.833 68 0.136 5.0 0.795 - 127 525 0.638 - 135 2.709 66 0.135 5.0 0.801 - 127 550 0.633 - 137 2.574 64 0.133 4.0 0.802 - 128 575 0.628 - 138 2.481 62 0.131 5.0 0.805 - 128 600 0.625 - 140 2.408 60 0.129 5.0 0.814 The Power RF characterization data were measured with a 68 ohm resistor shunting the MRF134 input port. The scattering parameters were measured on the MRF134 device alone with no external components. - 128 (continued) Table 1. Common Source Scattering Parameters VDS = 28 V, ID = 100 mA MRF134 5.2-8 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA S11 f (MHz) |S11| 625 0.619 650 S21 S12 S22 |S21| |S12| |S22| - 142 2.334 58 0.128 5.0 0.818 - 129 0.617 - 144 2.259 56 0.125 6.0 0.824 - 130 675 0.618 - 146 2.192 55 0.123 7.0 0.834 - 130 700 0.619 - 147 2.124 53 0.122 8.0 0.851 - 131 725 0.618 - 150 2.061 51 0.120 9.0 0.859 - 132 750 0.614 - 152 1.983 49 0.118 11 0.857 - 133 775 0.609 - 154 1.908 48 0.119 13 0.865 - 133 800 0.562 - 155 1.877 49 0.118 15 0.872 - 133 825 0.587 - 156 1.869 46 0.119 16 0.869 - 134 850 0.593 - 158 1.794 44 0.118 18 0.875 - 135 875 0.597 - 160 1.749 43 0.119 18 0.881 - 135 900 0.598 - 162 1.700 41 0.118 18 0.889 - 136 925 0.592 - 164 1.641 40 0.115 18 0.888 - 138 950 0.588 - 166 1.590 39 0.112 20 0.877 - 138 975 0.586 - 168 1.572 39 0.108 23 0.864 - 137 1000 0.590 - 171 1.551 37 0.107 28 0.863 - 137 The Power RF characterization data were measured with a 68 ohm resistor shunting the MRF134 input port. The scattering parameters were measurd on the MRF134 device alone with no external components. Table 1. Common Source Scattering Parameters (continued) VDS = 28 V, ID = 100 mA MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF134 5.2-9 + j50 + 90 + j25 + 60 +120 + j100 + j150 S12 +150 + j10 + j250 100 150 50 + j500 10 0 25 50 100 150 .20 250 500 180 f = 1000 MHz .18 .16 .14 .12 .10 .08 .06 .04 .02 + 30 200 300 500 0 f = 1000 MHz - j500 - j10 500 400 300 - j250 200 150 100 50 - 30 -150 - j150 - j100 - j25 - 60 -120 - 90 - j50 Figure 17. S12, Reverse Transmission Coefficient versus Frequency VDS = 28 V ID = 100 mA Figure 16. S11, Input Reflection Coefficient versus Frequency VDS = 28 V ID = 100 mA + j50 + 90 + 60 +120 + j25 + j100 100 150 +150 f = 50 MHz S21 .10 180 + j150 200 + 30 + j10 300 400 500 + j500 1000 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 + j250 0 0 10 25 50 100 150 250 500 - j500 - j250 - j10 - 30 -150 f = 1000 MHz 500 - 60 -120 - j25 - 90 50 300 200 150 100 80 - j150 - j100 - j50 Figure 18. S21, Forward Transmission Coefficient versus Frequency VDS = 28 V ID = 100 mA MRF134 5.2-10 S22 Figure 19. S22, Output Reflection Coefficient versus Frequency VDS = 28 V ID = 100 mA MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA DESIGN CONSIDERATIONS The MRF134 is a RF power N-Channel enhancement mode field-effect transistor (FET) designed especially for VHF power amplifier and oscillator applications. Motorola RF MOS FETs feature a vertical structure with a planar design, thus avoiding the processing difficulties associated with V-groove vertical power FETs. Motorola Application Note AN-211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs. The major advantages of RF power FETs include high gain, low noise, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. Power output can be varied over a wide range with a low power dc control signal, thus facilitating manual gain control, ALC and modulation. DC BIAS The MRF134 is an enhancement mode FET and, therefore, does not conduct when drain voltage is applied. Drain current flows when a positive voltage is applied to the gate. See Figure 9 for a typical plot of drain current versus gate voltage. RF power FETs require forward bias for optimum performance. The value of quiescent drain current (IDQ) is not critical for many applications. The MRF134 was characterized at IDQ = 50 mA, which is the suggested minimum value of IDQ. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of the MRF134 may be controlled from its rated value down to zero (negative gain) by varying the dc gate voltage. This feature facilitates the design of manual gain control, AGC/ALC and modulation systems. (See Figure 8.) AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar VHF transistors are suitable for MRF134. See Motorola Application Note AN721, Impedance Matching Networks Applied to RF Power Transistors. The higher input impedance of RF MOS FETs helps ease the task of broadband network design. Both small signal scattering parameters and large signal impedances are provided. While the s-parameters will not produce an exact design solution for high power operation, they do yield a good first approximation. This is an additional advantage of RF MOS power FETs. RF power FETs are triode devices and, therefore, not unilateral. This, coupled with the very high gain of the MRF134, yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. The MRF134 was characterized with a 68-ohm input shunt loading resistor. Two port parameter stability analysis with the MRF134 s-parameters provides a useful-tool for selection of loading or feedback circuitry to assure stable operation. See Motorola Application Note AN215A for a discussion of two port network theory and stability. Input resistive loading is not feasible in low noise applications. The MRF134 noise figure data was generated in a circuit with drain loading and a low loss input network. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF134 5.2-11 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration. * Guaranteed 28 Volt, 150 MHz Performance Output Power = 15 Watts Narrowband Gain = 16 dB (Typ) Efficiency = 60% (Typical) 15 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER FET * Small-Signal and Large-Signal Characterization * 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR D * Excellent Thermal Stability, Ideally Suited For Class A Operation CASE 211-07, STYLE 2 * Facilitates Manual Gain Control, ALC and Modulation Techniques G S MAXIMUM RATINGS Rating Symbol Val e Value Unit Drain-Source Voltage VDSS 65 Vdc Drain-Gate Voltage (RGS = 1.0 M) VDGR 65 Vdc VGS 40 Vdc Drain Current -- Continuous ID 2.5 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 55 0.314 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Symbol Max Unit RJC 3.2 C/W Gate-Source Voltage Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 7 MRF136 5.2-12 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Drain-Source Breakdown Voltage (VGS = 0, ID = 5.0 mA) V(BR)DSS 65 -- -- Vdc Zero-Gate Voltage Drain Current (VDS = 28 V, VGS = 0) IDSS -- -- 2.0 mAdc Gate-Source Leakage Current (VGS = 40 V, VDS = 0) IGSS -- -- 1.0 Adc Gate Threshold Voltage (VDS = 10 V, ID = 25 mA) VGS(th) 1.0 3.0 6.0 Vdc Forward Transconductance (VDS = 10 V, ID = 250 mA) gfs 250 400 -- mmhos Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Ciss -- 24 -- pF Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Coss -- 27 -- pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Crss -- 5.5 -- pF Noise Figure (VDS = 28 Vdc, ID = 500 mA, f = 150 MHz) NF -- 1.0 -- dB Common Source Power Gain (Figure 1) (VDD = 28 Vdc, Pout = 15 W, f = 150 MHz, IDQ = 25 mA) Gps 13 16 -- dB Drain Efficiency (Figure 1) (VDD = 28 Vdc, Pout = 15 W, f = 150 MHz, IDQ = 25 mA) 50 60 -- % Electrical Ruggedness (Figure 1) (VDD = 28 Vdc, Pout = 15 W, f = 150 MHz, IDQ = 25 mA, VSWR 30:1 at all Phase Angles) OFF CHARACTERISTICS (1) ON CHARACTERISTICS (1) DYNAMIC CHARACTERISTICS (1) FUNCTIONAL CHARACTERISTICS No Degradation in Output Power NOTES: 1. Each side measured separately. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF136 5.2-13 R4 C8 D1 BIAS ADJUST R3 C10 VDD = + 28 V C9 - L2 R1 C1 C11 RFC1 C7 R2 + RFC2 L3 C6 RF OUTPUT L1 RF INPUT C4 C2 C3 C5 DUT C1, C2 -- Arco 406, 15 - 115 pF or Equivalent C3 -- Arco 404, 8 - 60 pF or Equivalent C4 -- 43 pF Mini-Unelco or Equivalent C5 -- 24 pF Mini-Unelco or Equivalent C6 -- 680 pF, 100 Mils Chip C7 -- 0.01 F Ceramic C8 -- 100 F, 40 V C9 -- 0.1 F Ceramic C10, C11 -- 680 pF Feedthru D1 -- 1N5925A Motorola Zener L1 -- 2 Turns, 0.29 ID, #18 AWG, 0.10 Long L2 -- 2 Turns, 0.23 ID, #18 AWG, 0.10 Long L3 -- 2-1/4 Turns, 0.29 ID, #18 AWG, 0.125 Long RFC1 -- 20 Turns, 0.30 ID, #20 AWG Enamel Closewound RFC2 -- Ferroxcube VK-200 -- 19/4B R1 -- 27 , 1 W Thin Film R2 -- 10 k, 1/4 W R3 -- 10 Turns, 10 k R4 -- 1.8 k, 1/2 W Board Material -- 0.062 G10, 1 oz. Cu Clad, Double Sided Figure 1. 150 MHz Test Circuit MRF136 5.2-14 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA TYPICAL CHARACTERISTICS 20 16 f = 100 MHz 150 MHz 9 200 MHz Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 18 10 14 12 10 8 6 VDD = 28 V IDQ = 25 mA 4 2 7 200 MHz 5 4 3 VDD = 13.5 V IDQ = 25 mA 2 200 400 600 800 Pin, INPUT POWER (MILLWATTS) 0 0 1000 Figure 2. Output Power versus Input Power 200 400 600 800 Pin, INPUT POWER (MILLWATTS) 1000 Figure 3. Output Power versus Input Power 20 24 f = 400 MHz IDQ = 25 mA VDD = 28 V Pout , OUTPUT POWER (WATTS) 18 Pout , OUTPUT POWER (WATTS) 150 MHz 6 1 0 0 16 f = 100 MHz 8 14 12 10 8 VDD = 13.5 V 6 4 21 Pin = 600 mW 18 15 400 mW 12 200 mW 9 6 IDQ = 25 mA f = 100 MHz 3 2 0 0 1 2 Pin, INPUT POWER (WATTS) 3 0 12 4 Figure 4. Output Power versus Input Power 14 18 22 16 20 24 VDD, SUPPLY VOLTAGE (VOLTS) 26 28 Figure 5. Output Power versus Supply Voltage 24 24 21 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) Pin = 900 mW 18 600 mW 15 12 300 mW 9 6 IDQ = 25 mA f = 150 MHz 3 0 12 14 18 22 16 20 24 VDD, SUPPLY VOLTAGE (VOLTS) 21 Pin = 1 W 18 15 0.7 W 12 0.4 W 9 6 IDQ = 25 mA f = 200 MHz 3 26 28 0 12 Figure 6. Output Power versus Supply Voltage MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 14 16 18 20 22 24 VDD, SUPPLY VOLTAGE (VOLTS) 26 28 Figure 7. Output Power versus Supply Voltage MRF136 5.2-15 TYPICAL CHARACTERISTICS 16 IDQ = 25 mA f = 400 MHz 18 16 Pin = 3 W 14 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 20 2W 12 10 1W 8 6 4 VDD = 28 V IDQ = 25 mA Pin = CONSTANT 14 12 10 8 0 12 4 14 16 18 20 22 24 VDD, SUPPLY VOLTAGE (VOLTS) 26 0 -7 28 I D, DRAIN CURRENT (MILLAMPS) 2 1.8 TYPICAL DEVICE SHOWN, VGS(th) = 3 V 1.6 1.4 1.2 1 VDS = 10 V 0.8 0.6 0.4 0.2 0 1 2 3 4 5 VDS, GATE-SOURCE VOLTAGE (VOLTS) 6 -5 7 1.04 -4 -3 -2 -1 0 1 VGS, GATE-SOURCE VOLTAGE (VOLTS) VDS = 28 V 1.03 2 3 ID = 750 mA 1.02 500 mA 1.01 1 0.99 0.98 250 mA 0.97 0.96 25 mA 0.95 0.94 - 25 Figure 10. Drain Current versus Gate Voltage (Transfer Characteristics) 0 25 50 75 100 125 TC, CASE TEMPERATURE (C) 150 175 Figure 11. Gate-Source Voltage versus Case Temperature 10 100 60 I D, DRAIN CURRENT (AMPS) VGS = 0 V f = 1 MHz 180 C, CAPACITANCE (pF) -6 Figure 9. Output Power versus Gate Voltage VGS, GATE-SOURCE VOLTAGE (NORMALIZED) Figure 8. Output Power versus Supply Voltage Coss 40 Ciss 20 Crss 0 400 150MHz MHz TYPICAL DEVICE SHOWN, VGS(th) = 3 V 6 2 2 0 400 MHz 0 4 8 12 16 20 24 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 3 2 TC = 25C 1 0.3 0.2 28 Figure 12. Capacitance versus Drain-Source Voltage MRF136 5.2-16 5 0.1 1 2 10 3 5 20 30 50 70 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 100 Figure 13. DC Safe Operating Area MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA TYPICAL CHARACTERISTICS 40 40 35 35 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) TYPICAL 400 MHz PERFORMANCE 30 25 20 15 VDD = 28 V IDQ = 100 mA f = 400 MHz 10 5 0.5 1 1.5 2 2.5 Pin, INPUT POWER (WATTS) 3 25 TYPICAL DEVICE SHOWN, VGS(th) = 3 V 20 15 10 f = 400 MHz 5 0 0 30 VDD = 28 V IDQ = 100 mA Pin = CONSTANT 3.5 0 -4 Figure 14. Output Power versus Input Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA -3 -1 1 -2 0 2 VGS, GATE-SOURCE VOLTAGE (VOLTS) 3 4 Figure 15. Output Power versus Gate Voltage MRF136 5.2-17 400 200 Zin{ 150 400 200 ZOL* f = 100 MHz 150 f = 100 MHz VDD = 28 V, IDQ = 25 mA, Pout = 15 W f MHz Zin{ OHMS 100 150 200 400 7.5 - j9.73 4.11 - j7.56 2.66 - j6.39 2.39 - j2.18 VDD = 28 V, IDQ = 25 mA, Pout = 15 W {27 Shunt Resistor Gate-to-Ground f MHz ZOL* OHMS 100 150 200 400 13.7 - j16.8 9.08 - j15.38 4.74 - j8.92 4.28 - j4.17 ZOL* = Conjugate of the optimum load impedance into which the device operates at a given output power, voltage and frequency. Figure 16. Large-Signal Series Equivalent Input Impedance, Zin Figure 17. Large-Signal Series Equivalent Output Impedance, ZOL* Zin & ZOL* are given from drain-to-drain and gate-to-gate respectively. 400 225 VDD = 28 V, IDQ = 100 mA, Pout = 30 W 400 Zin 150 225 ZOL* 150 100 100 50 f = 30 MHz 50 f = 30 MHz f MHz Zin{ Ohms ZOL* Ohms 30 50 100 150 225 400 59.3 - j24 48 - j33.5 20.5 - j34.2 4.77 - j25.4 3 - j9.5 2.34 - j3.31 40.1 - j8.52 37 - j11.9 29 - j16.5 20.6 - j19 13 - j16.7 10.2 - j14.3 Feedback loops: 560 ohms in series with 0.1 F Drain to gate, each side of push-pull FET ZOL* = Conjugate of the optimum load impedance into which the device operates at a given output power, voltage and frequency. Figure 18. Input and Outut Impedance MRF136 5.2-18 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA f (MHz) S11 S21 S12 S22 2.0 |S11| 0.988 - 11 |S21| 41.19 173 |S12| 0.006 67 |S22| 0.729 - 12 5.0 0.970 - 27 40.07 164 0.014 62 0.720 - 31 10 0.923 - 52 35.94 149 0.026 54 0.714 - 58 20 0.837 - 88 27.23 129 0.040 36 0.690 - 96 30 0.784 - 111 20.75 117 0.046 27 0.684 - 118 40 0.751 - 125 16.49 108 0.048 22 0.680 - 131 50 0.733 - 135 13.41 103 0.050 19 0.679 - 139 60 0.720 - 1 42 11.43 99 0.050 16 0.678 - 145 70 0.709 - 147 9.871 96 0.050 14 0.679 - 149 80 0.707 - 152 8.663 93 0.051 13 0.683 - 153 90 0.706 - 155 7.784 91 0.051 13 0.682 - 155 100 0.708 - 157 7.008 88 0.051 13 0.680 - 157 110 0.711 - 159 6.435 86 0.051 14 0.681 - 158 120 0.714 - 161 5.899 85 0.051 15 0.682 - 159 130 0.717 - 163 5.439 82 0.052 16 0.684 - 160 140 0.720 - 164 5.068 80 0.052 17 0.684 - 161 150 0.723 - 165 4.709 80 0.052 18 0.686 - 161 160 0.727 - 166 4.455 78 0.052 18 0.690 - 161 170 0.732 - 167 4.200 77 0.052 18 0.694 - 162 180 0.735 - 168 3.967 75 0.052 19 0.699 - 162 190 0.738 - 169 3.756 74 0.052 19 0.703 - 163 200 0.740 - 170 3.545 73 0.052 20 0.706 - 163 225 0.746 - 171 3.140 69 0.053 22 0.717 - 163 250 0.742 - 172 2.783 67 0.053 25 0.724 - 163 275 0.744 - 173 2.540 64 0.054 27 0.724 - 163 300 0.751 - 174 2.323 60 0.055 29 0.736 - 163 325 0.757 - 175 2.140 58 0.058 32 0.749 - 163 350 0.760 - 176 1.963 54 0.059 35 0.758 - 163 375 0.762 - 177 1.838 52 0.062 38 0.768 - 163 400 0.774 - 179 1.696 50 0.065 41 0.783 - 163 425 0.775 - 179 1.590 48 0.068 43 0.793 - 163 450 0.781 + 179 1.493 46 0.071 46 0.805 - 163 475 0.787 + 177 1.415 43 0.074 47 0.813 - 164 500 0.792 + 176 1.332 40 0.079 48 0.825 - 164 525 0.797 + 175 1.259 38 0.083 50 0.831 - 164 550 0.801 + 175 1.185 37 0.088 51 0.843 - 164 575 0.810 + 174 1.145 36 0.094 52 0.855 - 164 600 0.816 + 173 1.091 34 0.101 52 0.869 - 165 625 0.818 + 171 1.041 32 0.106 53 0.871 - 165 650 0.825 + 170 0.994 30 0.112 53 0.884 - 165 675 0.834 + 169 0.962 29 0.119 53 0.890 - 165 700 0.837 + 168 0.922 27 0.127 53 0.906 - 166 725 0.836 + 167 0.879 25 0.133 52 0.909 - 167 750 0.841 + 166 0.838 25 0.140 53 0.917 - 167 775 0.844 + 165 0.824 24 0.148 52 0.933 - 167 800 0.846 + 163 0.785 21 0.154 50 0.941 - 168 Table 1. Common Source Scattering Parameters VDS = 28 V, ID = 0.5 A MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF136 5.2-19 +90 +j50 +120 +j25 +60 +j100 f = 800 MHz +j150 +j10 +150 +j250 f = 800 MHz +30 S12 600 400 +j500 10 0 25 50 100 150 250 180 500 0.18 400 0.16 0.10 0.12 0.06 0.08 0.02 70 0 0.04 - j500 150 - j10 0.14 S11 70 - j250 - 30 -150 - j150 - j100 - j25 - 60 -120 -90 - j50 Figure 19. S11, Input Reflection Coefficient versus Frequency VDS = 28 V ID = 0.5 A Figure 20. S12, Reverse Transmission Coefficient versus Frequency VDS = 28 V ID = 0.5 A +90 +j50 70 +120 +60 +j25 +j100 100 +150 S21 180 8 6 4 +j10 400 f = 800 MHz 2 +j150 +30 150 +j500 0 0 25 50 100 150 250 500 - j500 - j250 S22 - j150 - j100 - j25 - 60 -120 10 f = 800 MHz 150 400 70 - j10 - 30 -150 +j250 - 90 - j50 Figure 21. S21, Forward Transmission Coefficient versus Frequency VDS = 28 V ID = 0.5 A Figure 22. S22, Output Reflection Coefficient versus Frequency VDS = 28 V ID = 0.5 A MRF136 5.2-20 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA DESIGN CONSIDERATIONS The MRF136 is an RF power N-Channel enhancement mode field-effect transistor (FET) designed especially for HF and VHF power amplifier applications. Motorola RF MOS FETs feature planar design for optimum manufacturability. Motorola Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs. The major advantages of RF power FETs include high gain, low noise, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. Power output can be varied over a wide range with a low power dc control signal, thus facilitating manual gain control, ALC and modulation. DC BIAS The MRF136 is an enhancement mode FET and, therefore, does not conduct when drain voltage is applied without gate bias. A positive gate voltage causes drain current to flow (see Figure 10). RF power FETs require forward bias for optimum gain and power output. A Class AB condition with quiescent drain current (IDQ) in the 25 -100 mA range is sufficient for many applications. For special requirements such as linear amplification, IDQ may have to be adjusted to optimize the critical parameters. The MOS gate is a dc open circuit. Since the gate bias circuit does not have to deliver any current to the FET, a simple resistive divider arrangement may sometimes suffice for this function. Special applications may require more elaborate gate bias systems. GAIN CONTROL Power output of the MRF136 may be controlled from rated values down to the milliwatt region (>20 dB reduction in power output with constant input power) by varying the dc gate voltage. This feature, not available in bipolar RF power devices, facilitates the incorporation of manual gain control, AGC/ALC and modulation schemes into system designs. A full range of power output control may require dc gate voltage excursions into the negative region. AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for MRF136. See Motorola Application Note AN721, Impedance Matching Networks Applied to RF Power Transistors. Both small signal scattering parameters and large signal impedance parameters are provided. Large signal impedances should be used for network designs wherever possible. While the s parameters will not produce an exact design solution for high power operation, they do yield a good first approximation. This is particularly useful at frequencies outside those presented in the large signal impedance plots. RF power FETs are triode devices and are therefore not unilateral. This, coupled with the very high gain, yields a device capable of self oscillation. Stability may be achieved using techniques such as drain loading, input shunt resistive loading, or feedback. S parameter stability analysis can provide useful information in the selection of loading and/or feedback to insure stable operation. The MRF136 was characterized with a 27 ohm input shunt loading resistor. For further discussion of RF amplifier stability and the use of two port parameters in RF amplifier design, see Motorola Application Note AN215A. LOW NOISE OPERATION Input resistive loading will degrade noise performance, and noise figure may vary significantly with gate driving impedance. A low loss input matching network with its gate impedance optimized for lowest noise is recommended. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF136 5.2-21 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET MRF141 Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. * Guaranteed Performance at 30 MHz, 28 V: Output Power -- 150 W Gain -- 18 dB (22 dB Typ) Efficiency -- 40% 150 W, 28 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFET D * Typical Performance at 175 MHz, 50 V: Output Power -- 150 W Gain -- 13 dB * Low Thermal Resistance G * Ruggedness Tested at Rated Output Power * Nitride Passivated Die for Enhanced Reliability S * S-Parameters Available for Download into Frequency Domain Simulators. See http://motorola.com/sps/rf/designtds/ CASE 211-11, STYLE 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Drain-Gate Voltage VDGO 65 Vdc VGS 40 Vdc Drain Current -- Continuous ID 16 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 300 1.71 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Symbol Max Unit RJC 0.6 C/W Gate-Source Voltage Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 9 MRF141 5.2-22 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS IDSS 65 -- -- Vdc -- -- 5.0 mAdc IGSS -- -- 1.0 Adc VGS(th) VDS(on) 1.0 3.0 5.0 Vdc 0.1 0.9 1.5 Vdc gfs 5.0 7.0 -- mhos Ciss Coss -- 350 -- pF Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) -- 420 -- pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Crss -- 35 -- pF Gps 16 -- 20 10 -- -- dB 40 45 -- % IMD(d3) IMD(d11) -- -- - 30 - 60 - 28 -- OFF CHARACTERISTICS (1) Drain-Source Breakdown Voltage (VGS = 0, ID = 100 mA) Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) Gate-Body Leakage Current (VGS = 20 V, VDS = 0) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) Drain-Source On-Voltage (VGS = 10 V, ID = 10 A) Forward Transconductance (VDS = 10 V, ID = 5.0 A) DYNAMIC CHARACTERISTICS (1) Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) FUNCTIONAL TESTS Common Source Amplifier Power Gain, f = 30; 30.001 MHz (VDD = 28 V, Pout = 150 W (PEP), IDQ = 250 mA) f = 175 MHz Drain Efficiency (VDD = 28 V, Pout = 150 W (PEP), f = 30; 30.001 MHz, IDQ = 250 mA, ID (Max) = 5.95 A) Intermodulation Distortion (1) (VDD = 28 V, Pout = 150 W (PEP), f = 30 MHz, f2 = 30.001 MHz, IDQ = 250 mA) Load Mismatch (VDD = 28 V, Pout = 150 W (PEP), f1 = 30; 30.001 MHz, IDQ = 250 mA, VSWR 30:1 at all Phase Angles) dB No Degradation in Output Power CLASS A PERFORMANCE Intermodulation Distortion (1) and Power Gain GPS -- (VDD = 28 V, Pout = 50 W (PEP), f1 = 30 MHz, IMD(d3) -- IMD(d9 - 13) f2 = 30.001 MHz, IDQ = 4.0 A) -- NOTE: 1. To MIL-STD-1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone. BIAS + 0 - 12 V - 23 - 50 - 75 R4 C5 RF INPUT R3 C7 C6 R1 D.U.T. C8 T2 C4 L2 C9 - dB + + L1 C11 -- -- -- C10 28 V - RF OUTPUT C2 T1 C3 R2 C2, C5, C6, C7, C8, C9 -- 0.1 F Ceramic Chip or Monolythic with Short Leads C3 -- Arco 469 C4 -- 820 pF Unencapsulated Mica or Dipped Mica with Short Leads C10 -- 10 F/100 V Electrolytic C11 -- 1 F, 50 V, Tantalum C12 -- 330 pF, Dipped Mica (Short leads) C12 L1 -- VK200/4B Ferrite Choke or Equivalent, 3.0 H L2 -- Ferrite Bead(s), 2.0 H R1, R2 -- 51 /1.0 W Carbon R3 -- 1.0 /1.0 W Carbon or Parallel Two 2 , 1/2 W Resistors R4 -- 1 k/1/2 W Carbon T1 -- 16:1 Broadband Transformer T2 -- 1:25 Broadband Transformer Board Material -- 0.062 Fiberglass (G10), 1 oz. Copper Clad, 2 Sides, er = 5 Figure 1. 30 MHz Test Circuit (Class AB) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF141 5.2-23 TYPICAL CHARACTERISTICS VGS, GATE-SOURCE VOLTAGE (NORMALIZED) I D, DRAIN CURRENT (AMPS) 100 10 TC = 25C 1 1 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 100 1.04 1.03 1.02 1.01 1 0.99 0.98 0.97 0.96 0.95 0.94 0.93 0.92 0.91 0.9 - 25 Figure 2. DC Safe Operating Area ID = 5 A 4A 2A 1A 0.5 A 0.25 A 0 75 100 Figure 3. Gate-Source Voltage versus Case Temperature 200 0 f T, UNITY GAIN FREQUENCY (MHz) 2000 C, CAPACITANCE (pF) VDS = 20 V 10 V 1000 Coss Ciss 200 Crss 0 0 2 4 6 8 10 12 14 ID, DRAIN CURRENT (AMPS) 16 18 20 0 20 5 10 15 25 Figure 5. Capacitance versus Drain-Source Voltage 30 Pout , OUTPUT POWER (WATTS) 300 25 20 VDD = 28 V IDQ = 250 mA Pout = 150 W 15 10 200 f = 175 MHz VDD = 28 V IDQ = 250 mA 100 00 5 10 15 2 MRF141 5.2-24 10 100 200 20 25 300 200 f = 30 MHz VDD = 28 V IDQ = 250 mA 100 5 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) Figure 4. Common Source Unity Gain Frequency versus Drain Current GPS , POWER GAIN (dB) 25 50 TC, CASE TEMPERATURE (C) 0 0 1 2 3 4 f, FREQUENCY (MHz) Pin, INPUT POWER (WATTS) Figure 6. Power Gain versus Frequency Figure 7. Output Power versus Input Power 5 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA TYPICAL CHARACTERISTICS 280 320 f = 30 MHz IDQ = 250 mA Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 320 240 Pin = 4 W 200 160 2W 120 1W 80 240 200 Pin = 20 W 160 120 14 W 80 8W 40 40 14 16 18 20 22 24 26 0 12 28 14 16 18 20 22 24 26 SUPPLY VOLTAGE (VOLTS) SUPPLY VOLTAGE (VOLTS) Figure 8. Output Power versus Supply Voltage Figure 9. Output Power versus Supply Voltage IMD, INTERMODULATION DISTORTION (dB) 0 12 f = 175 MHz IDQ = 250 mA 280 28 25 d3 35 d5 45 IDQ = 250 mA 55 VDD = 28, f = 30 MHz, TONE SEPARATION = 1 kHz 25 d3 35 45 55 d5 0 20 40 60 IDQ = 500 mA 80 100 120 140 160 180 200 Pout, OUTPUT POWER (WATTS) Figure 10. IMD versus Pout (PEP) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF141 5.2-25 Zo = 10 VDD = 28 V IDQ = 250 mA Pout = 150 W PEP ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a ZOL* = given output power, voltage and frequency. 30 15 100 7.5 Zin 4 30 2 150 100 2 f = 175 MHz ZOL* f = 175 MHz Figure 11. Input and Output Impedances RFC1 + 28 V + BIAS 0 - 12 V C10 L4 R1 - C11 + C5 C4 R3 C1 DUT L3 C9 L2 L1 RF OUTPUT RF INPUT C2 C3 R2 C1, C2, C8 -- Arco 463 or equivalent C3 -- 25 pF, Unelco C4 -- 0.1 F, Ceramic C5 -- 1.0 F, 15 WV Tantalum C6 -- 25 pF, Unelco J101 C7 -- 25 pF, Unelco J101 C9 -- Arco 262 or equivalent C10 -- 0.05 F, Ceramic C11 -- 15 F, 35 WV Electrolytic C6 C7 C8 L1 -- 3/4, #18 AWG into Hairpin L2 -- Printed Line, 0.200 x 0.500 L3 -- 7/8, #16 AWG into Hairpin L4 -- 2 Turns, #16 AWG, 5/16 ID RFC1 -- 5.6 H, Molded Choke RFC2 -- VK200-4B R1 -- 150 , 1.0 W Carbon R2 -- 10 k, 1/2 W Carbon R3 -- 120 , 1/2 W Carbon Figure 12. 175 MHz Test Circuit (Class AB) MRF141 5.2-26 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Table 1. Common Source S-Parameters (VDS = 24 V, ID = 5 A) S11 S21 S12 S22 AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA f MHz |S11| |S21| |S12| |S22| 30 0.916 -177 4.23 83 0.008 32 0.876 -177 40 0.919 -178 3.23 76 0.009 39 0.885 178 50 0.922 -178 2.55 72 0.010 45 0.914 -180 60 0.923 -179 2.14 68 0.010 46 0.893 179 70 0.927 -179 1.77 63 0.011 48 0.878 179 80 0.929 -179 1.48 61 0.013 53 0.864 180 90 0.931 -180 1.28 60 0.015 61 0.850 180 100 0.934 -180 1.15 55 0.016 66 0.893 178 110 0.935 180 1.05 53 0.016 69 0.913 177 120 0.939 180 0.91 51 0.017 69 0.930 180 130 0.941 179 0.82 48 0.019 67 0.916 -180 140 0.943 179 0.76 46 0.022 68 0.926 179 150 0.946 179 0.67 42 0.024 70 0.940 177 160 0.946 179 0.63 40 0.025 73 0.915 178 170 0.948 178 0.57 39 0.024 78 0.891 178 180 0.949 178 0.52 37 0.026 75 0.906 178 190 0.950 178 0.49 37 0.028 74 0.899 176 200 0.950 177 0.45 35 0.030 78 0.915 176 210 0.938 177 0.43 31 0.043 108 0.966 174 220 0.958 178 0.39 33 0.029 61 0.972 175 230 0.961 177 0.36 27 0.038 77 1.033 174 240 0.960 177 0.36 28 0.036 76 0.943 174 250 0.961 176 0.32 30 0.038 77 0.912 175 260 0.962 176 0.30 31 0.040 76 0.918 174 270 0.961 176 0.27 30 0.044 77 0.933 171 280 0.963 176 0.26 30 0.045 79 0.943 172 290 0.964 175 0.25 25 0.045 78 0.940 172 300 0.965 175 0.26 27 0.047 77 0.930 172 310 0.966 175 0.25 27 0.051 78 0.977 172 320 0.964 175 0.24 26 0.053 75 0.947 171 330 0.966 174 0.22 21 0.056 75 0.946 170 340 0.967 174 0.23 26 0.056 75 0.944 170 350 0.967 174 0.22 24 0.058 78 0.946 171 360 0.965 174 0.21 28 0.062 74 0.956 171 370 0.966 174 0.20 28 0.048 61 0.968 170 380 0.968 173 0.20 27 0.053 74 0.931 168 390 0.970 173 0.18 31 0.063 74 0.962 168 400 0.970 173 0.17 26 0.071 79 0.965 172 410 0.970 172 0.17 29 0.076 78 0.982 169 420 0.971 172 0.17 30 0.076 76 0.956 167 430 0.970 172 0.15 29 0.070 76 0.912 165 440 0.970 171 0.13 32 0.074 76 0.933 167 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF141 5.2-27 Table 1. Common Source S-Parameters (VDS = 24 V, ID = 5 A) (continued) S11 S21 S12 S22 AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA f MHz |S11| |S21| |S12| |S22| 450 0.970 171 0.15 31 0.081 76 0.967 167 460 0.970 171 0.15 32 0.090 73 0.982 164 470 0.969 170 0.15 30 0.095 77 0.945 165 480 0.964 170 0.16 34 0.099 80 0.956 165 490 0.960 170 0.15 31 0.107 75 0.947 163 500 0.959 170 0.15 23 0.103 68 0.962 163 Table 2. Common Source S-Parameters (VDS = 28 V, ID = 5 A) S11 f MHz |S11| 30 0.914 40 0.915 50 S21 S22 |S21| |S12| |S22| -177 4.60 82 0.007 25 0.874 -176 -178 3.51 76 0.008 26 0.879 -179 0.918 -178 2.76 71 0.009 34 0.888 -179 60 0.920 -178 2.32 67 0.010 45 0.881 179 70 0.924 -179 1.92 62 0.010 56 0.887 179 80 0.927 -179 1.61 60 0.009 62 0.899 -179 90 0.930 -179 1.39 58 0.010 61 0.874 -177 100 0.933 -180 1.23 53 0.012 57 0.875 -179 110 0.934 -180 1.13 51 0.015 63 0.884 179 120 0.938 180 0.98 49 0.017 73 0.926 179 130 0.940 180 0.88 46 0.018 81 0.959 -179 140 0.942 179 0.81 44 0.018 82 0.966 -179 150 0.945 179 0.71 40 0.018 77 0.961 -179 160 0.946 179 0.67 38 0.021 73 0.910 -179 170 0.948 178 0.61 37 0.023 77 0.871 179 180 0.950 178 0.54 35 0.026 78 0.912 178 190 0.950 178 0.52 34 0.029 76 0.959 177 200 0.952 178 0.47 33 0.034 64 0.971 178 210 0.949 177 0.46 28 0.067 17 1.023 -178 220 0.953 178 0.41 31 0.019 94 0.954 177 230 0.959 177 0.38 26 0.037 76 1.014 174 240 0.960 177 0.37 25 0.040 79 0.943 174 250 0.961 177 0.33 27 0.042 84 0.972 175 260 0.962 176 0.30 27 0.041 86 0.969 176 270 0.961 176 0.29 27 0.041 83 0.951 175 280 0.963 176 0.27 27 0.042 80 0.929 174 290 0.964 175 0.26 23 0.045 79 0.930 172 300 0.965 175 0.27 25 0.051 81 0.963 171 310 0.966 175 0.26 24 0.052 83 1.012 173 320 0.965 175 0.25 23 0.053 81 0.984 171 330 0.966 174 0.23 19 0.055 78 0.955 172 340 0.967 174 0.24 25 0.054 76 0.929 171 350 0.967 174 0.22 22 0.057 79 0.917 170 MRF141 5.2-28 S12 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Table 2. Common Source S-Parameters (VDS = 28 V, ID = 5 A) (contlinued) S11 S21 S12 S22 AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA f MHz |S11| |S21| |S12| |S22| 360 0.967 174 0.21 26 0.060 91 0.978 169 370 0.967 174 0.20 26 0.084 89 1.030 167 380 0.969 173 0.20 23 0.081 82 0.994 170 390 0.970 173 0.19 29 0.072 80 0.963 170 400 0.970 173 0.17 25 0.069 80 0.951 172 410 0.970 172 0.17 27 0.072 71 0.985 167 420 0.972 172 0.16 28 0.078 68 0.970 165 430 0.971 172 0.15 27 0.084 70 0.953 165 440 0.971 171 0.13 29 0.086 74 0.949 168 450 0.971 171 0.15 29 0.087 79 0.962 167 460 0.970 171 0.15 32 0.081 72 0.976 164 470 0.969 170 0.15 29 0.079 65 0.969 164 480 0.964 170 0.16 32 0.081 57 0.972 165 490 0.959 170 0.15 29 0.081 54 0.976 165 500 0.958 170 0.15 21 0.086 58 0.953 167 RF POWER MOSFET CONSIDERATIONS MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between the terminals. The metal anode gate structure determines the capacitors from gate-to-drain (Cgd), and gate- to-source (C gs ). The PN junction formed during the fabrication of the MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case the numbers are lower. However, neither method represents the actual operating conditions in RF applications. DRAIN Cgd GATE Cds Cgs Ciss = Cgd = Cgs Coss = Cgd = Cds Crss = Cgd SOURCE LINEARITY AND GAIN CHARACTERISTICS In addition to the typical IMD and power gain data presented, Figure 4 may give the designer additional information on the capabilities of this device. The graph represents the small signal unity current gain frequency at a given drain current level. This is equivalent to fT for bipolar transistors. Since this test is performed at a fast sweep speed, heating of the device does not occur. Thus, in normal use, the higher temperatures may degrade these characteristics to some extent. DRAIN CHARACTERISTICS One figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, VDS(on), occurs in the linear region of the output characteristic and is specified under specific test conditions for gate-source voltage and drain current. For MOSFETs, VDS(on) has a positive temperature coefficient and constitutes an important design consideration at high temperatures, because it contributes to the power dissipation within the device. GATE CHARACTERISTICS The gate of the MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high -- on the order of 109 ohms -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage slightly in excess of the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gate of this device is essentially capacitor. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn- on of the device due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- This device does not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF141 5.2-29 Using a resistor to keep the gate-to-source impedance low also helps damp transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate-drain capacitance. If the gate-to-source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate-threshold voltage and turn the device on. HANDLING CONSIDERATIONS When shipping, the devices should be transported only in antistatic bags or conductive foam. Upon removal from the packaging, careful handling procedures should be adhered to. Those handling the devices should wear grounding straps and devices not in the antistatic packaging should be kept in metal tote bins. MOSFETs should be handled by the case and not by the leads, and when testing the device, all leads should make good electrical contact before voltage is applied. As a final note, when placing the FET into the system it is designed for, soldering should be done with a grounded iron. DESIGN CONSIDERATIONS The MRF141 is an RF Power, MOS, N-channel enhancement mode field-effect transistor (FET) designed for HF and VHF power amplifier applications. Motorola Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs. MRF141 5.2-30 The major advantages of RF power MOSFETs include high gain, low noise, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. Power output can be varied over a wide range with a low power dc control signal. DC BIAS The MRF141 is an enhancement mode FET and, therefore, does not conduct when drain voltage is applied. Drain current flows when a positive voltage is applied to the gate. RF power FETs require forward bias for optimum performance. The value of quiescent drain current (IDQ) is not critical for many applications. The MRF141 was characterized at IDQ = 250 mA, each side, which is the suggested minimum value of IDQ. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may be just a simple resistive divider network. Some applications may require a more elaborate bias sytem. GAIN CONTROL Power output of the MRF141 may be controlled from its rated value down to zero (negative gain) by varying the dc gate voltage. This feature facilitates the design of manual gain control, AGC/ALC and modulation systems. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET MRF141G Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. * Guaranteed Performance at 175 MHz, 28 V: Output Power -- 300 W Gain -- 12 dB (14 dB Typ) Efficiency -- 50% 300 W, 28 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFET * Low Thermal Resistance -- 0.35C/W * Ruggedness Tested at Rated Output Power * Nitride Passivated Die for Enhanced Reliability * S-Parameters Available for Download into Frequency Domain Simulators. See http://motorola.com/sps/rf/designtds/ D G S (FLANGE) G CASE 375-04, STYLE 2 D MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Drain-Gate Voltage VDGO 65 Vdc VGS 40 Vdc Drain Current -- Continuous ID 32 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 500 2.85 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Symbol Max Unit RJC 0.35 C/W Gate-Source Voltage Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF141G 5.2-31 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) IDSS -- -- 5.0 mAdc Gate-Body Leakage Current (VGS = 20 V, VDS = 0) IGSS -- -- 1.0 Adc Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) VGS(th) 1.0 3.0 5.0 Vdc Drain-Source On-Voltage (VGS = 10 V, ID = 10 A) VDS(on) 0.1 0.9 1.5 Vdc Forward Transconductance (VDS = 10 V, ID = 5.0 A) gfs 5.0 7.0 -- mhos Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Ciss -- 350 -- pF Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Coss -- 420 -- pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Crss -- 35 -- pF Gps 12 14 -- dB Drain Efficiency (VDD = 28 V, Pout = 300 W, f = 175 MHz, ID (Max) = 21.4 A) 45 55 -- % Load Mismatch (VDD = 28 V, Pout = 300 W, IDQ = 500 mA, f = 175 MHz, VSWR 5:1 at all Phase Angles) OFF CHARACTERISTICS (1) Drain-Source Breakdown Voltage (VGS = 0, ID = 100 mA) ON CHARACTERISTICS (1) DYNAMIC CHARACTERISTICS (1) FUNCTIONAL TESTS (2) Common Source Amplifier Power Gain (VDD = 28 V, Pout = 300 W, IDQ = 500 mA, f = 175 MHz) No Degradation in Output Power NOTES: 1. Each side measured separately. 2. Measured in push-pull configuration. MRF141G 5.2-32 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA R1 + BIAS 0 - 6 V - L2 C4 C5 C10 C2 + 28 V - OUTPUT C12 L1 T2 DUT INPUT C11 T1 HIGH IMPEDANCE WINDINGS 9:1 IMPEDANCE RATIO CENTER TAP CENTER TAP C13 C6 C7 C1 C3 CONNECTIONS TO LOW IMPEDANCE WINDINGS 4:1 IMPEDANCE RATIO C8 C9 T1 -- 9:1 RF Transformer. Can be made of 15 - 18 Ohms T1 -- Semirigid Co-Ax, 62 - 90 Mils O.D. T2 -- 1:9 RF Transformer. Can be made of 15 - 18 Ohms T2 -- Semirigid Co-Ax, 70 - 90 Mils O.D. C1 -- Arco 402, 1.5 - 20 pF C2 -- Arco 406, 15 - 115 pF C3, C4, C8, C9, C10 -- 1000 pF Chip C5, C11 -- 0.1 F Chip C6 -- 330 pF Chip C7 -- 200 pF and 180 pF Chips in Parallel C12 -- 0.47 F Ceramic Chip, Kemet 1215 or Equivalent C13 -- Arco 403, 3.0 - 35 pF L1 -- 10 Turns AWG #16 Enameled Wire, L1 -- Close Wound, 1/4 I.D. L2 -- Ferrite Beads of Suitable Material for L2 -- 1.5 - 2.0 H Total Inductance R1 -- 100 Ohms, 1/2 W R2 -- 1.0 kOhm, 1/2 W Board Material -- 0.062 Fiberglass (G10), 1 oz. Copper Clad, 2 Sides, r = 5 NOTE: For stability, the input transformer T1 must be loaded NOTE: with ferrite toroids or beads to increase the common NOTE: mode inductance. For operation below 100 MHz. The NOTE: same is required for the output transformer. See pictures for construction details. Unless Otherwise Noted, All Chip Capacitors are ATC Type 100 or Equivalent. Figure 1. 175 MHz Test Circuit VGS, GATE-SOURCE VOLTAGE (NORMALIZED) TYPICAL CHARACTERISTICS I D, DRAIN CURRENT (AMPS) 100 10 TC = 25C 1 1 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 100 1.04 1.03 1.02 1.01 1 0.99 0.98 0.97 0.96 0.95 0.94 0.93 0.92 0.91 0.9 - 25 Figure 2. DC Safe Operating Area MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ID = 5 A 4A 2A 1A 0.5 A 0 25 50 TC, CASE TEMPERATURE (C) 0.25 A 75 100 Figure 3. Gate-Source Voltage versus Case Temperature MRF141G 5.2-33 TYPICAL CHARACTERISTICS 2000 Coss VDS = 20 V C, CAPACITANCE (pF) f T, UNITY GAIN FREQUENCY (MHz) 2000 10 V 1000 0 0 2 4 6 8 10 12 14 ID, DRAIN CURRENT (AMPS) 16 18 Ciss 200 Crss 20 20 0 NOTE: Data shown applies to each half of MRF141G. 5 10 15 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) NOTE: Data shown applies to each half of MRF141G. Figure 4. Common Source Unity Gain Frequency versus Drain Current Figure 5. Capacitance versus Drain-Source Voltage 400 Pout , OUTPUT POWER (WATTS) G PS , POWER GAIN (dB) 30 25 20 15 VDD = 28 V IDQ = 2 x 250 mA Pout = 300 W 10 5 25 2 5 350 f = 175 MHz Pin = 30 W 300 20 W IDQ = 250 mA x 2 250 10 W 200 150 100 50 10 30 f, FREQUENCY (MHz) 100 200 0 12 Figure 6. Power Gain versus Frequency 14 16 18 20 22 SUPPLY VOLTAGE (VOLTS) 24 26 28 Figure 7. Output Power versus Supply Voltage 150 125 f = 175 MHz INPUT, Zin (GATE TO GATE) 100 125 100 150 f = 175 MHz 30 30 OUTPUT, ZOL* (DRAIN TO DRAIN) Zo = 10 ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a ZOL* = given output power, voltage and frequency. Figure 8. Input and Output Impedances MRF141G 5.2-34 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOTE: S-Parameter data represents measurements taken from one chip only. Table 1. Common Source S-Parameters (VDS = 24 V, ID = 0.57 A) S11 f MHz |S11| 30 0.845 40 S21 S12 S22 AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA |S21| |S12| |S22| -174 4.88 78 0.014 -5 0.939 -174 0.867 -174 3.23 66 0.013 -14 0.856 -172 50 0.876 -174 2.62 62 0.013 -17 0.868 -175 60 0.883 -174 2.12 59 0.012 -15 0.938 -176 70 0.890 -175 1.85 58 0.012 -12 1.036 -177 80 0.899 -175 1.57 56 0.011 -10 1.110 -177 90 0.909 -175 1.36 50 0.010 -11 1.190 -176 100 0.920 -176 1.13 43 0.009 -13 1.160 -176 110 0.930 -176 0.95 37 0.007 -16 1.100 -177 120 0.938 -176 0.78 33 0.007 -11 1.010 -175 130 0.944 -176 0.67 31 0.006 -3 0.954 -176 140 0.948 -177 0.60 31 0.006 10 0.964 -177 150 0.951 -177 0.56 32 0.005 23 1.023 -178 160 0.954 -178 0.52 32 0.005 31 1.130 -179 170 0.958 -178 0.48 29 0.006 37 1.190 -178 180 0.962 -178 0.45 24 0.006 39 1.260 -179 190 0.965 -179 0.40 17 0.007 41 1.200 180 200 0.968 -179 0.34 15 0.008 49 1.090 -179 210 0.970 -179 0.30 15 0.008 60 0.980 -178 220 0.972 -180 0.27 15 0.008 68 0.960 -177 230 0.973 -180 0.25 17 0.008 68 1.045 -179 240 0.974 180 0.24 20 0.009 67 1.030 179 250 0.975 180 0.24 19 0.011 68 1.100 179 260 0.977 179 0.21 17 0.012 69 1.200 179 270 0.978 179 0.22 13 0.013 72 1.210 177 280 0.979 179 0.19 13 0.012 72 1.170 177 290 0.979 178 0.17 1 0.012 68 1.040 180 300 0.980 178 0.16 8 0.013 65 0.998 179 310 0.980 178 0.16 13 0.015 70 0.977 179 320 0.981 178 0.16 15 0.017 76 0.979 178 330 0.982 177 0.13 10 0.017 83 1.033 178 340 0.982 177 0.15 19 0.016 81 1.110 176 350 0.982 177 0.13 16 0.016 73 1.140 177 360 0.983 177 0.13 8 0.020 63 1.150 177 370 0.982 176 0.10 6 0.023 65 1.120 176 380 0.982 176 0.10 7 0.023 72 1.050 177 390 0.982 176 0.10 10 0.021 81 0.993 177 400 0.982 176 0.09 14 0.018 83 0.959 179 410 0.983 175 0.10 12 0.020 71 1.040 176 420 0.983 175 0.09 16 0.025 65 1.090 174 430 0.984 175 0.09 15 0.028 70 1.100 174 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF141G 5.2-35 Table 1. Common Source S-Parameters (VDS = 24 V, ID = 0.57 A) (continued) S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 440 0.983 174 0.09 12 0.028 77 1.100 175 450 0.983 174 0.09 13 0.025 82 1.090 176 460 0.983 174 0.07 14 0.022 66 1.080 174 470 0.983 174 0.07 13 0.024 56 0.992 175 480 0.983 174 0.07 16 0.032 60 0.970 175 490 0.984 173 0.07 13 0.036 74 0.996 174 500 0.984 173 0.07 18 0.035 85 1.040 174 AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA Table 2. Common Source S-Parameters (VDS = 28 V, ID = 0.65 A) S11 S21 S12 S22 AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA f MHz |S11| 30 0.849 40 |S21| |S12| |S22| -174 5.41 79 0.013 -6 0.934 -174 0.869 -174 3.59 67 0.013 -16 0.849 -172 50 0.878 -174 2.91 62 0.012 -17 0.859 -174 60 0.884 -174 2.36 60 0.011 -13 0.928 -176 70 0.890 -175 2.06 59 0.010 -11 1.029 -177 80 0.899 -175 1.75 56 0.009 -14 1.110 -177 90 0.910 -176 1.52 51 0.009 -18 1.190 -175 100 0.920 -176 1.26 43 0.009 -19 1.150 -175 110 0.929 -176 1.07 37 0.008 -15 1.100 -177 120 0.937 -176 0.88 34 0.006 -4 1.000 -175 130 0.943 -176 0.75 32 0.004 5 0.953 -176 140 0.947 -177 0.67 32 0.003 6 0.966 -177 150 0.950 -177 0.63 32 0.004 6 1.030 -178 160 0.953 -178 0.58 32 0.005 18 1.120 -178 170 0.957 -178 0.54 29 0.006 36 1.180 -178 180 0.961 -178 0.51 24 0.006 53 1.250 -179 190 0.964 -179 0.45 18 0.006 65 1.200 180 200 0.967 -179 0.39 15 0.005 69 1.110 -179 210 0.969 -179 0.35 15 0.005 63 1.030 -178 220 0.971 -180 0.31 15 0.006 59 0.975 -177 230 0.972 -180 0.28 17 0.009 66 1.040 -179 240 0.973 180 0.27 20 0.010 78 1.030 179 250 0.974 180 0.27 19 0.010 88 1.090 180 260 0.976 179 0.24 17 0.009 85 1.200 179 270 0.977 179 0.24 12 0.010 73 1.220 177 280 0.978 179 0.21 12 0.011 66 1.170 178 290 0.979 178 0.19 2 0.013 70 1.040 180 300 0.979 178 0.18 8 0.013 78 1.000 179 310 0.979 178 0.17 13 0.013 89 0.975 179 320 0.980 178 0.17 14 0.012 88 0.988 177 MRF141G 5.2-36 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Table 2. Common Source S-Parameters (VDS = 28 V, ID = 0.65 A) (continued) S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 330 0.981 177 0.14 9 0.013 80 1.050 177 340 0.982 177 0.16 17 0.015 75 1.110 176 350 0.982 177 0.15 14 0.018 80 1.130 177 360 0.982 177 0.14 8 0.018 82 1.160 177 370 0.982 176 0.12 6 0.017 82 1.120 176 380 0.982 176 0.12 6 0.015 77 1.060 177 390 0.982 176 0.11 9 0.016 72 0.992 177 400 0.982 176 0.10 13 0.018 78 0.958 179 410 0.983 175 0.11 11 0.021 83 1.050 176 420 0.983 175 0.10 15 0.021 87 1.070 175 430 0.983 175 0.10 14 0.019 85 1.090 175 440 0.983 174 0.10 10 0.018 76 1.130 175 450 0.983 174 0.10 9 0.021 71 1.130 176 460 0.982 174 0.08 10 0.024 70 1.080 174 470 0.983 174 0.08 11 0.023 82 0.996 175 480 0.983 174 0.08 15 0.021 90 0.974 176 490 0.983 173 0.08 12 0.019 87 0.971 175 500 0.983 173 0.08 17 0.021 78 1.010 174 AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF141G 5.2-37 RF POWER MOSFET CONSIDERATIONS MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between the terminals. The metal anode gate structure determines the capacitors from gate-to-drain (Cgd), and gate- to-source (C gs ). The PN junction formed during the fabrication of the MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case the numbers are lower. However, neither method represents the actual operating conditions in RF applications. DRAIN Cgd GATE Cds Cgs Ciss = Cgd = Cgs Coss = Cgd = Cds Crss = Cgd SOURCE LINEARITY AND GAIN CHARACTERISTICS In addition to the typical IMD and power gain data presented, Figure 4 may give the designer additional information on the capabilities of this device. The graph represents the small signal unity current gain frequency at a given drain current level. This is equivalent to fT for bipolar transistors. Since this test is performed at a fast sweep speed, heating of the device does not occur. Thus, in normal use, the higher temperatures may degrade these characteristics to some extent. DRAIN CHARACTERISTICS One figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, VDS(on), occurs in the linear region of the output characteristic and is specified under specific test conditions for gate-source voltage and drain current. For MOSFETs, VDS(on) has a positive temperature coefficient and constitutes an important design consideration at high temperatures, because it contributes to the power dissipation within the device. GATE CHARACTERISTICS The gate of the MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high -- on the order of 109 ohms -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage slightly in excess of the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gate of this device is essentially capacitor. Circuits that leave the gate open-circuited or floatMRF141G 5.2-38 ing should be avoided. These conditions can result in turn- on of the device due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- This device does not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate-to-source impedance low also helps damp transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate-drain capacitance. If the gate-to-source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate-threshold voltage and turn the device on. HANDLING CONSIDERATIONS When shipping, the devices should be transported only in antistatic bags or conductive foam. Upon removal from the packaging, careful handling procedures should be adhered to. Those handling the devices should wear grounding straps and devices not in the antistatic packaging should be kept in metal tote bins. MOSFETs should be handled by the case and not by the leads, and when testing the device, all leads should make good electrical contact before voltage is applied. As a final note, when placing the FET into the system it is designed for, soldering should be done with a grounded iron. DESIGN CONSIDERATIONS The MRF141G is an RF Power, MOS, N-channel enhancement mode field-effect transistor (FET) designed for HF and VHF power amplifier applications. Motorola Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs. The major advantages of RF power MOSFETs include high gain, low noise, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. Power output can be varied over a wide range with a low power dc control signal. DC BIAS The MRF141G is an enhancement mode FET and, therefore, does not conduct when drain voltage is applied. Drain current flows when a positive voltage is applied to the gate. RF power FETs require forward bias for optimum performance. The value of quiescent drain current (IDQ) is not critical for many applications. The MRF141G was characterized at IDQ = 250 mA, each side, which is the suggested minimum value of IDQ. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may be just a simple resistive divider network. Some applications may require a more elaborate bias system. GAIN CONTROL Power output of the MRF141G may be controlled from its rated value down to zero (negative gain) by varying the dc gate voltage. This feature facilitates the design of manual gain control, AGC/ALC and modulation systems. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MRF148A Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. * Superior High Order IMD * Specified 50 Volts, 30 MHz Characteristics Output Power = 30 Watts Power Gain = 18 dB (Typ) Efficiency = 40% (Typ) 30 W, to 175 MHz N-CHANNEL MOS LINEAR RF POWER FET * IMD(d3) (30 W PEP) -- - 35 dB (Typ) * IMD(d11) (30 W PEP) -- - 60 dB (Typ) * 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR * Lower Reverse Transfer Capacitance (3.0 pF Typical) D G CASE 211-07, STYLE 2 S MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 120 Vdc Drain-Gate Voltage VDGO 120 Vdc VGS 40 Vdc Drain Current -- Continuous ID 6.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 115 0.66 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Symbol Max Unit RJC 1.52 C/W Gate-Source Voltage Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF148A 5.2-39 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Drain-Source Breakdown Voltage (VGS = 0, ID = 10 mA) V(BR)DSS 125 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) IDSS -- -- 1.0 mAdc Gate-Body Leakage Current (VGS = 20 V, VDS = 0) IGSS -- -- 100 nAdc Gate Threshold Voltage (VDS = 10 V, ID = 10 mA) VGS(th) 1.0 2.5 5.0 Vdc Drain-Source On-Voltage (VGS = 10 V, ID = 2.5 A) VDS(on) 1.0 3.0 5.0 Vdc Forward Transconductance (VDS = 10 V, ID = 2.5 A) gfs 0.8 1.2 -- mhos Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Ciss -- 62 -- pF Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Coss -- 35 -- pF Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Crss -- 3.0 -- pF Gps -- -- 18 15 -- -- dB -- -- 40 50 -- -- % IMD(d3) IMD(d11) -- -- - 35 - 60 -- -- OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (SSB) Common Source Amplifier Power Gain (VDD = 50 V, Pout = 30 W (PEP), IDQ = 100 mA) Drain Efficiency (VDD = 50 V, f = 30 MHz, IDQ = 100 mA) (30 MHz) (175 MHz) (30 W PEP) (30 W CW) Intermodulation Distortion (VDD = 50 V, Pout = 30 W (PEP), f = 30; 30.001 MHz, IDQ = 100 mA) dB Load Mismatch (VDD = 50 V, Pout = 30 W (PEP), f = 30; 30.001 MHz, IDQ = 100 mA, VSWR 30:1 at all Phase Angles) No Degradation in Output Power CLASS A PERFORMANCE Intermodulation Distortion (1) and Power Gain (VDD = 50 V, Pout = 10 W (PEP), f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 1.0 A) GPS IMD(d3) IMD(d9 - 13) -- -- -- 20 - 50 - 70 -- -- -- dB NOTE: 1. To MIL-STD-1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone. L2 L1 BIAS + 0 - 10 V - + C1 C4 C5 C6 + C7 - 50 V R1 DUT T2 RF INPUT T1 R3 RF OUTPUT C2 C8 R2 C3 R4 C1, C2, C3, C4, C5, C6 -- 0.1 F Ceramic Chip or Equivalent C7 -- 10 F, 100 V Electrolytic C8 -- 100 pF Dipped Mica L1 -- VK200 20/4B Ferrite Choke or Equivalent (3.0 H) L2 -- Ferrite Bead(s), 2.0 H R1, R2 -- 200 , 1/2 W Carbon R3 -- 4.7 , 1/2 W Carbon R4 -- 470 , 1.0 W Carbon T1 -- 4:1 Impedance Transformer T2 -- 1:2 Impedance Transformer Figure 1. 2.0 to 50 MHz Broadband Test Circuit MRF148A 5.2-40 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 15 VDD = 50 V IDQ = 100 mA Pout = 30 W (PEP) 10 5 40 VDD = 50 V 20 40 V IDQ = 100 mA 0 60 VDD = 50 V 40 30 MHz POWER GAIN (dB) 20 150 MHz 60 Pout , OUTPUT POWER (WATTS) 25 40 V 20 IDQ = 100 mA 2 5 10 20 50 100 0 200 0 0.5 1 1.5 2 2.5 f, FREQUENCY (MHz) Pin, INPUT POWER (WATTS) Figure 2. Power Gain versus Frequency Figure 3. Output Power versus Input Power 150 MHz d3 - 40 d5 - 50 - 30 d3 d5 10 20 30 Pout, OUTPUT POWER (WATTS PEP) - 50 0 40 Figure 4. IMD versus Pout + BIAS VDS = 30 V VDS = 15 V 1000 VDD = 50 V, IDQ = 100 mA, TONE SEPARATION 1 kHz - 40 f T, UNITY GAIN FREQUENCY (MHz) 2000 - 30 30 MHz IMD, INTERMODULATION DISTORTION (dB) 0 0 0 1 2 3 ID, DRAIN CURRENT (AMPS) Figure 5. Common Source Unity Gain Frequency versus Drain Current R2 + 50 Vdc RFC1 0-6 V C2 C3 4 + C5 C4 L2 DUT RF INPUT C7 RF OUTPUT L1 R1 C6 C1 T1 C1 -- 91 pF Unelco Type MCM 01/010 C2, C4 -- 0.1 F Erie Red Cap C3 -- Allen Bradley 680 pF Feed Thru C5 -- 1.0 F, 50 Vdc Electrolytic C6 -- 15 pF Unelco Type J101 C7 -- 24 pF Unelco Type MCM 01/010 L1 -- 2 Turns #18 AWG, 5/16 ID L2 -- 4 Turns #18 AWG, 5/16 ID R1 -- 1.0 Ohm, 1/4 W Carbon R2 -- 2000 Ohm, 1/4 W Carbon RFC1 -- VK200 21/4B T1 -- 4:1 Transformer, 1.75 Subminiature T1 -- Coaxial Cable 50 12.5 T1 -- 4:1 Impedance Ratio T1 -- Transformer, Line T1 -- Impedance = 25 Figure 6. 150 MHz Test Circuit MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF148A 5.2-41 I D , DRAIN CURRENT (AMPS) I DS , DRAIN CURRENT (AMPS) 2 1 VDS = 10 V gfs = 1.2 mho 0 0 1 2 3 4 5 6 7 8 VGS, GATE-SOURCE VOLTAGE (VOLTS) 9 10 7 5 3 2 TC = 25C 1 0.7 0.5 0.3 0.2 10 0.1 0.2 Figure 7. Gate Voltage versus Drain Current 0.4 0.7 1 2 4 7 10 20 40 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 70 100 200 Figure 8. DC Safe Operating Area (SOA) 175 150 50 175 30 ZOL* 15 7.0 f = 2.0 MHz Zin 4.0 VDD = 50 V IDQ = 100 mA Pout = 30 W PEP Gate Shunted By 100 f = 2.0 MHz ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a ZOL* = given output power, voltage and frequency. Figure 9. Impedance Coordinates -- 50 Ohm Characteristic Impedance MRF148A 5.2-42 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA RF POWER MOSFET CONSIDERATIONS MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between the terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to-source (Cgs). The PN junction formed during the fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case the numbers are lower. However, neither method represents the actual operating conditions in RF applications. DRAIN Cgd GATE Cds Cgs Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd SOURCE LINEARITY AND GAIN CHARACTERISTICS In addition to the typical IMD and power gain data presented, Figure 5 may give the designer additional information on the capabilities of this device. The graph represents the small signal unity current gain frequency at a given drain current level. This is equivalent to fT for bipolar transistors. Since this test is performed at a fast sweep speed, heating of the device does not occur. Thus, in normal use, the higher temperatures may degrade these characteristics to some extent. DRAIN CHARACTERISTICS One figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, VDS(on), occurs in the linear region of the output characteristic and is specified under specific test conditions for gate-source voltage and drain current. For MOSFETs, VDS(on) has a positive temperature coefficient and constitutes an important design consideration at high temperatures, because it contributes to the power dissipation within the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high -- on the order of 109 ohms -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage slightly in excess of the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended. EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY Collector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Emitter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Base . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V(BR)CES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VBE(on) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCE(sat) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Cib . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Cob . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . hfe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . RCE(sat) = Drain Source Gate V(BR)DSS VDGO ID IDSS IGSS VGS(th) VDS(on) Ciss Coss gfs VDS(on) VCE(sat) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . r DS(on) = ID IC MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF148A 5.2-43 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MRF150 Designed primarily for linear large-signal output stages up to 150 MHz frequency range. * Specified 50 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 17 dB (Typ) Efficiency = 45% (Typ) 150 W, to 150 MHz N-CHANNEL MOS LINEAR RF POWER FET * Superior High Order IMD * IMD(d3) (150 W PEP) -- - 32 dB (Typ) * IMD(d11) (150 W PEP) -- - 60 dB (Typ) * 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR * S-Parameters Available for Download into Frequency Domain Simulators. See http://motorola.com/sps/rf/designtds/ D G CASE 211-11, STYLE 2 S MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Rating VDSS 125 Vdc Drain-Gate Voltage VDGO 125 Vdc VGS 40 Vdc Drain Current -- Continuous ID 16 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 300 1.71 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Symbol Max Unit RJC 0.6 C/W Gate-Source Voltage Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 9 MRF150 5.2-44 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit V(BR)DSS 125 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) IDSS -- -- 5.0 mAdc Gate-Body Leakage Current (VGS = 20 V, VDS = 0) IGSS -- -- 1.0 Adc Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) VGS(th) 1.0 3.0 5.0 Vdc Drain-Source On-Voltage (VGS = 10 V, ID = 10 A) VDS(on) 1.0 3.0 5.0 Vdc gfs 4.0 7.0 -- mhos Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Ciss -- 400 -- pF Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Coss -- 240 -- pF Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Crss -- 40 -- pF Gps -- -- 17 8.0 -- -- dB -- 45 -- % IMD(d3) IMD(d11) -- -- - 32 - 60 -- -- OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 100 mA) ON CHARACTERISTICS Forward Transconductance (VDS = 10 V, ID = 5.0 A) DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (SSB) Common Source Amplifier Power Gain (VDD = 50 V, Pout = 150 W (PEP), IDQ = 250 mA) f = 30 MHz f = 150 MHz Drain Efficiency (VDD = 50 V, Pout = 150 W (PEP), f = 30; 30.001 MHz, ID (Max) = 3.75 A) Intermodulation Distortion (1) (VDD = 50 V, Pout = 150 W (PEP), f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 250 mA) dB Load Mismatch (VDD = 50 V, Pout = 150 W (PEP), f = 30; 30.001 MHz, IDQ = 250 mA, VSWR 30:1 at all Phase Angles) No Degradation in Output Power CLASS A PERFORMANCE Intermodulation Distortion (1) and Power Gain (VDD = 50 V, Pout = 50 W (PEP), f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 3.0 A) GPS IMD(d3) IMD(d9 - 13) -- -- -- 20 - 50 - 75 -- -- -- dB NOTE: 1. To MIL-STD-1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone. L2 L1 BIAS + 0 - 12 V - + C5 C6 C8 C7 C9 + C10 - - 50 V R1 DUT T2 RF INPUT T1 R3 C2 C4 C1 R2 C1 -- 470 pF Dipped Mica C2, C5, C6, C7, C8, C9 -- 0.1 F Ceramic Chip or Monolythic with Short Leads C3 -- 200 pF Unencapsulated Mica or Dipped Mica with Short Leads C4 -- 15 pF Unencapsulated Mica or Dipped Mica with Short Leads RF OUTPUT C3 C10 -- 10 F/100 V Electrolytic L1 -- VK200/4B Ferrite Choke or Equivalent, 3.0 H L2 -- Ferrite Bead(s), 2.0 H R1, R2 -- 51 /1.0 W Carbon R3 -- 3.3 /1.0 W Carbon (or 2.0 x 6.8 /1/2 W in Parallel T1 -- 9:1 Broadband Transformer T2 -- 1:9 Broadband Transformer Figure 1. 30 MHz Test Circuit (Class AB) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF150 5.2-45 15 VDD = 50 V IDQ = 250 mA Pout = 150 W (PEP) 10 5 0 2 5 10 20 50 100 VDD = 50 V 100 40 V 50 00 30 VDD = 50 V 40 V 0 1 IDQ = 250 mA 2 3 4 5 6 Pin, INPUT POWER (WATTS) Figure 2. Power Gain versus Frequency Figure 3. Output Power versus Input Power 1000 - 30 - 35 150 MHz f T, UNITY GAIN FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dB) 20 100 f, FREQUENCY (MHz) d3 - 40 - 45 d5 - 50 VDD = 50 V, IDQ = 250 mA, TONE SEPARATION = 1 kHz - 30 - 35 30 MHz - 40 d3 - 45 - 50 IDQ = 250 mA 10 250 200 150 50 0 200 150 MHz POWER GAIN (dB) 20 250 200 150 30 MHz Pout , OUTPUT POWER (WATTS) 25 0 d5 20 40 60 80 100 120 140 160 VDS = 30 V 800 15 V 600 400 200 0 0 5 10 15 20 ID, DRAIN CURRENT (AMPS) Pout, OUTPUT POWER (WATTS PEP) Figure 4. IMD versus Pout Figure 5. Common Source Unity Gain Frequency versus Drain Current IDS , DRAIN CURRENT (AMPS) 10 8 6 4 2 0 VDS = 10 V gfs = 5 mhos 0 2 4 6 8 10 VGS, GATE-SOURCE VOLTAGE (VOLTS) Figure 6. Gate Voltage versus Drain Current MRF150 5.2-46 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 150 90 f = 175 MHz 136 30 Zin 15 90 30 f = 175 MHz 15 7.5 7.5 4.0 ZOL* Zo = 10 2.0 VDD = 50 V IDQ = 250 mA Pout = 150 W PEP 4.0 2.0 ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a ZOL* = given output power, voltage and frequency. NOTE: Gate Shunted by 25 Ohms. Figure 7. Series Equivalent Impedance RFC2 + 50 Vdc C10 L4 R1 BIAS 0 - 12 V + C4 C5 DUT L3 L1 RF INPUT C3 RF OUTPUT L2 C6 C2 C11 C9 R3 C1 + C7 C8 R2 C1, C2, C8 -- Arco 463 or equivalent C3 -- 25 pF, Unelco C4 -- 0.1 F, Ceramic C5 -- 1.0 F, 15 WV Tantalum C6 -- 25 pF, Unelco J101 C7 -- 25 pF, Unelco J101 C9 -- Arco 262 or equivalent C10 -- 0.05 F, Ceramic C11 -- 15 F, 60 WV Electrolytic L1 -- 3/4, 18 AWG into Hairpin L2 -- Printed Line, 0.200 x 0.500 L3 -- 1, #16 AWG into Hairpin L4 -- 2 Turns #16 AWG, 5/16 ID RFC1 -- 5.6 H, Choke RFC2 -- VK200-4B R1 -- 150 , 1.0 W Carbon R2 -- 10 k, 1/2 W Carbon R3 -- 120 , 1/2 W Carbon Figure 8. 150 MHz Test Circuit (Class AB) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF150 5.2-47 AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA Table 1. Common Source S-Parameters (VDS = 50 V, ID = 2 A) S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 30 0.936 -179 4.13 84 0.011 22 0.844 -176 40 0.936 -179 3.16 79 0.012 23 0.842 -180 50 0.936 -180 2.52 75 0.013 29 0.855 -179 60 0.937 180 2.13 72 0.014 36 0.854 179 70 0.939 179 1.81 68 0.013 42 0.870 179 80 0.940 179 1.53 67 0.013 45 0.868 -179 90 0.941 179 1.34 65 0.014 46 0.855 -178 100 0.942 179 1.21 60 0.016 46 0.874 180 110 0.942 179 1.11 58 0.018 52 0.875 178 120 0.945 178 0.99 56 0.019 61 0.893 180 130 0.946 178 0.88 53 0.019 67 0.902 -179 140 0.947 178 0.83 52 0.019 68 0.919 -179 150 0.949 177 0.74 49 0.020 63 0.910 -179 160 0.949 177 0.71 46 0.024 62 0.889 -180 170 0.952 177 0.65 44 0.026 68 0.878 179 180 0.953 177 0.59 42 0.029 72 0.921 179 190 0.954 176 0.57 41 0.029 75 0.949 178 200 0.956 176 0.52 39 0.028 74 0.929 178 210 0.955 176 0.51 38 0.030 71 0.934 179 220 0.957 175 0.49 35 0.034 70 0.918 177 230 0.960 175 0.43 32 0.039 71 0.977 175 240 0.959 175 0.42 32 0.040 74 0.941 175 250 0.961 175 0.39 32 0.040 77 0.944 176 260 0.961 175 0.36 31 0.040 76 0.948 177 270 0.960 174 0.35 29 0.043 74 0.947 175 280 0.963 174 0.34 29 0.046 73 0.929 174 290 0.963 174 0.32 25 0.048 74 0.918 172 300 0.965 173 0.32 28 0.051 78 0.925 174 310 0.966 173 0.29 27 0.052 79 0.953 174 320 0.963 173 0.28 26 0.054 76 0.954 172 330 0.965 172 0.26 22 0.057 74 0.914 171 340 0.966 172 0.26 27 0.058 72 0.925 171 350 0.965 172 0.26 25 0.062 75 0.934 171 360 0.968 171 0.25 25 0.065 74 0.979 171 370 0.967 171 0.23 24 0.064 73 0.993 168 380 0.967 171 0.24 22 0.068 74 0.952 172 390 0.969 170 0.22 26 0.069 74 0.942 170 400 0.968 170 0.21 23 0.072 76 0.936 172 410 0.968 170 0.21 24 0.076 73 0.984 168 420 0.970 169 0.20 25 0.078 71 0.977 167 430 0.969 169 0.18 25 0.082 72 0.959 168 440 0.970 169 0.19 25 0.082 73 0.953 169 MRF150 5.2-48 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA Table 1. Common Source S-Parameters (VDS = 50 V, ID = 2 A) (continued) S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 450 0.971 168 0.19 24 0.085 75 0.960 168 460 0.972 168 0.17 26 0.086 70 0.960 164 470 0.972 168 0.17 23 0.087 70 0.952 165 480 0.969 167 0.18 26 0.093 70 0.977 166 490 0.969 167 0.18 25 0.099 71 0.966 166 500 0.969 166 0.17 26 0.101 71 0.972 164 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF150 5.2-49 RF POWER MOSFET CONSIDERATIONS MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between the terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to-source (Cgs). The PN junction formed during the fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case the numbers are lower. However, neither method represents the actual operating conditions in RF applications. DRAIN Cgd GATE Cds Cgs Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd SOURCE LINEARITY AND GAIN CHARACTERISTICS In addition to the typical IMD and power gain data presented, Figure 5 may give the designer additional information on the capabilities of this device. The graph represents the small signal unity current gain frequency at a given drain current level. This is equivalent to fT for bipolar transistors. Since this test is performed at a fast sweep speed, heating of the device does not occur. Thus, in normal use, the higher temperatures may degrade these characteristics to some extent. DRAIN CHARACTERISTICS One figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, VDS(on), occurs in the linear region of the output characteristic and is specified under specific test conditions for gate-source voltage and drain current. For MOSFETs, VDS(on) has a positive temperature coefficient and constitutes an important design consideration at high temperatures, because it contributes to the power dissipation within the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high -- on the order of 109 ohms -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage slightly in excess of the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended. EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY Collector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Emitter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Base . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V(BR)CES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VBE(on) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCE(sat) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Cib . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Cob . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . hfe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . RCE(sat) = MRF150 5.2-50 Drain Source Gate V(BR)DSS VDGO ID IDSS IGSS VGS(th) VDS(on) Ciss Coss gfs VDS(on) VCE(sat) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . rDS(on) = ID IC MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET MRF151 Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. * Guaranteed Performance at 30 MHz, 50 V: Output Power -- 150 W Gain -- 18 dB (22 dB Typ) Efficiency -- 40% 150 W, 50 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFET * Typical Performance at 175 MHz, 50 V: Output Power -- 150 W Gain -- 13 dB * Low Thermal Resistance * Ruggedness Tested at Rated Output Power * Nitride Passivated Die for Enhanced Reliability * S-Parameters Available for Download into Frequency Domain Simulators. See http://motorola.com/sps/rf/designtds/ D G CASE 211-11, STYLE 2 S MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Rating VDSS 125 Vdc Drain-Gate Voltage VDGO 125 Vdc VGS 40 Vdc Drain Current -- Continuous ID 16 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 300 1.71 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Symbol Max Unit RJC 0.6 C/W Gate-Source Voltage Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 9 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF151 5.2-51 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit V(BR)DSS 125 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) IDSS -- -- 5.0 mAdc Gate-Body Leakage Current (VGS = 20 V, VDS = 0) IGSS -- -- 1.0 Adc Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) VGS(th) 1.0 3.0 5.0 Vdc Drain-Source On-Voltage (VGS = 10 V, ID = 10 A) VDS(on) 1.0 3.0 5.0 Vdc gfs 5.0 7.0 -- mhos Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Ciss -- 350 -- pF Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Coss -- 220 -- pF Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Crss -- 15 -- pF Gps 18 -- 22 13 -- -- dB 40 45 -- % IMD(d3) IMD(d11) -- -- - 32 - 60 - 30 -- OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 100 mA) ON CHARACTERISTICS Forward Transconductance (VDS = 10 V, ID = 5.0 A) DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS Common Source Amplifier Power Gain, f = 30; 30.001 MHz (VDD = 50 V, Pout = 150 W (PEP), IDQ = 250 mA) f = 175 MHz Drain Efficiency (VDD = 50 V, Pout = 150 W (PEP), f = 30; 30.001 MHz, ID (Max) = 3.75 A) Intermodulation Distortion (1) (VDD = 50 V, Pout = 150 W (PEP), f = 30 MHz, f2 = 30.001 MHz, IDQ = 250 mA) dB Load Mismatch (VDD = 50 V, Pout = 150 W (PEP), f1 = 30; 30.001 MHz, IDQ = 250 mA, VSWR 30:1 at all Phase Angles) No Degradation in Output Power CLASS A PERFORMANCE Intermodulation Distortion (1) and Power Gain (VDD = 50 V, Pout = 50 W (PEP), f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 3.0 A) GPS IMD(d3) IMD(d9 - 13) -- -- -- 23 - 50 - 75 -- -- -- dB NOTE: 1. To MIL-STD-1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone. BIAS + 0 - 12 V - C5 R3 T1 C1 C7 D.U.T. R1 RF INPUT + L1 C6 C8 T2 L2 C9 + - C10 50 V - RF OUTPUT C4 C2 R2 C1 -- 470 pF Dipped Mica C2, C5, C6, C7, C8, C9 -- 0.1 F Ceramic Chip or Monolythic with Short Leads C3 -- 200 pF Unencapsulated Mica or Dipped Mica with Short Leads C4 -- 15 pF Unencapsulated Mica or Dipped Mica with Short Leads C10 -- 10 F/100 V Electrolytic C3 L1 -- VK200/4B Ferrite Choke or Equivalent, 3.0 H L2 -- Ferrite Bead(s), 2.0 H R1, R2 -- 51 /1.0 W Carbon R3 -- 3.3 /1.0 W Carbon (or 2.0 x 6.8 /1/2 W in Parallel) T1 -- 9:1 Broadband Transformer T2 -- 1:9 Broadband Transformer Board Material -- 0.062 Fiberglass (G10), 1 oz. Copper Clad, 2 Sides, er = 5 Figure 1. 30 MHz Test Circuit MRF151 5.2-52 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA RFC2 +50 V + C10 R1 BIAS 0 - 12 V C11 L4 + C4 C5 R3 D.U.T. L3 C9 L2 RF OUTPUT C1 L1 RF INPUT C6 C2 C7 C8 R2 C3 L1 -- 3/4, #18 AWG into Hairpin L2 -- Printed Line, 0.200 x 0.500 L3 -- 1, #16 AWG into Hairpin L4 -- 2 Turns, #16 AWG, 5/16 ID RFC1 -- 5.6 H, Choke RFC2 -- VK200-4B R1 -- 150 , 1.0 W Carbon R2 -- 10 k, 1/2 W Carbon R3 -- 120 , 1/2 W Carbon Board Material -- 0.062 Fiberglass (G10), 1 oz. Copper Clad, 2 Sides, r = 5.0 C1, C2, C8 -- Arco 463 or equivalent C3 -- 25 pF, Unelco C4 -- 0.1 F, Ceramic C5 -- 1.0 F, 15 WV Tantalum C6 -- 15 pF, Unelco J101 C7 -- 25 pF, Unelco J101 C9 -- Arco 262 or equivalent C10 -- 0.05 F, Ceramic C11 -- 15 F, 60 WV Electrolytic D1 -- 1N5347 Zener Diode Figure 2. 175 MHz Test Circuit VGS , DRAIN-SOURCE VOLTAGE (NORMALIZED) TYPICAL CHARACTERISTICS 1000 Ciss C, CAPACITANCE (pF) 500 Coss 200 100 50 Crss 20 0 0 10 20 30 40 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 50 1.04 1.03 1.02 1.01 1 0.99 0.98 0.97 0.96 0.95 0.94 0.93 0.92 0.91 0.9 - 25 Figure 3. Capacitance versus Drain-Source Voltage MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 1D = 5 A 4A 2A 1A 250 mA 0 100 mA 25 50 75 TC, CASE TEMPERATURE (C) 100 Figure 4. Gate-Source Voltage versus Case Temperature MRF151 5.2-53 TYPICAL CHARACTERISTICS 2000 f T, UNITY GAIN FREQUENCY (MHz) I D, DRAIN CURRENT (AMPS) 100 10 TC = 25C 1 2 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS = 30 V VDS = 15 V 1000 0 200 0 Figure 5. DC Safe Operating Area 8 12 6 10 14 ID, DRAIN CURRENT (AMPS) 16 18 20 300 Pout , OUTPUT POWER (WATTS) 25 GPS, POWER GAIN (dB) 4 Figure 6. Common Source Unity Gain Frequency versus Drain Current 30 20 15 VDD = 50 V IDQ = 250 mA Pout = 150 W 10 5 2 2 5 VDD = 50 V 200 f = 175 MHz IDQ = 250 mA 100 0 0 5 10 15 100 Figure 7. Power Gain versus Frequency 200 25 300 VDD = 50 V 200 40 V f = 30 MHz IDQ = 250 mA 100 10 30 f, FREQUENCY (MHz) 20 0 0 1 2 3 Pin, INPUT POWER (WATTS) 4 5 Figure 8. Output Power versus Input Power IMD, INTERMODULATION DISTORTION 25 d3 35 d5 45 IDQ = 250 mA 55 VDD = 50 V, f = 30 MHz, TONE SEPARATION = 1 kHz 25 35 d3 45 55 d5 0 20 40 IDQ = 500 mA 60 100 120 140 160 80 Pout, OUTPUT POWER (WATTS PEP) 180 200 Figure 9. IMD versus Pout MRF151 5.2-54 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 150 f = 175 MHz 100 Zin 30 150 15 30 f = 175 MHz 100 15 7.5 7.5 Zo = 10 ZOL* 4 VDD = 50 V IDQ = 250 mA Pout = 150 W 2 4 ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a ZOL* = given output power, voltage and frequency. 2 NOTE: Gate Shunted by 25 Ohms. Figure 10. Series Equivalent Impedance AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA Table 1. Common Source S-Parameters (VDS = 50 V, ID = 2 A) S11 f MHz |S11| 30 0.877 40 50 S21 S12 S22 |S21| |S12| |S22| -174 10.10 77 0.008 19 0.707 -169 0.886 -175 7.47 69 0.009 24 0.715 -172 0.895 -175 5.76 63 0.008 33 0.756 -171 60 0.902 -176 4.73 58 0.009 39 0.764 -171 70 0.912 -176 3.86 52 0.009 46 0.784 -172 80 0.918 -177 3.19 48 0.010 54 0.802 -171 90 0.925 -177 2.69 45 0.011 62 0.808 -171 100 0.932 -177 2.34 40 0.013 67 0.850 -173 110 0.936 -178 2.06 37 0.014 72 0.865 -175 120 0.942 -178 1.77 35 0.015 76 0.875 -173 130 0.946 -179 1.55 32 0.017 77 0.874 -172 140 0.950 -179 1.39 30 0.019 77 0.884 -174 150 0.954 -180 1.23 27 0.021 78 0.909 -175 160 0.957 -180 1.13 24 0.023 79 0.911 -176 170 0.960 180 1.01 22 0.024 82 0.904 -177 180 0.962 179 0.90 20 0.026 82 0.931 -176 190 0.964 179 0.84 19 0.028 80 0.929 -178 200 0.967 179 0.75 18 0.030 79 0.922 -179 210 0.967 178 0.71 16 0.032 80 0.937 -180 220 0.969 178 0.67 14 0.035 82 0.949 180 230 0.971 178 0.60 12 0.038 81 0.950 179 240 0.970 177 0.57 12 0.037 80 0.950 179 250 0.972 177 0.51 12 0.039 80 0.935 179 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF151 5.2-55 AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA Table 1. Common Source S-Parameters (VDS = 50 V, ID = 2 A) (continued) S11 S21 f MHz |S11| |S21| 260 0.973 177 0.47 270 0.972 176 0.45 280 0.974 176 290 0.974 300 S12 |S12| |S22| 11 0.041 79 0.954 178 9 0.044 80 0.953 176 0.41 9 0.046 80 0.965 175 176 0.40 6 0.046 79 0.944 175 0.975 176 0.39 10 0.048 82 0.929 176 310 0.976 175 0.36 9 0.049 82 0.943 176 320 0.974 175 0.33 7 0.053 78 0.954 173 330 0.975 174 0.31 4 0.056 78 0.935 172 340 0.976 174 0.30 10 0.056 77 0.948 172 350 0.975 174 0.29 7 0.058 80 0.950 174 360 0.977 174 0.28 8 0.059 79 0.978 172 370 0.976 173 0.26 8 0.061 76 0.981 170 380 0.976 173 0.26 7 0.065 75 0.944 171 390 0.977 173 0.24 10 0.066 76 0.960 171 400 0.976 172 0.23 7 0.068 80 0.955 173 410 0.976 172 0.22 9 0.071 77 0.999 170 420 0.977 172 0.21 9 0.071 76 0.962 168 430 0.976 171 0.19 10 0.073 76 0.950 168 440 0.976 171 0.20 12 0.075 75 0.953 168 450 0.978 171 0.19 10 0.080 77 0.982 168 460 0.978 170 0.18 13 0.082 74 0.990 165 470 0.978 170 0.18 10 0.081 77 0.953 168 480 0.974 170 0.18 13 0.085 78 0.944 167 490 0.973 169 0.17 13 0.086 75 0.966 165 500 0.972 169 0.17 14 0.089 73 0.980 165 MRF151 5.2-56 S22 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA RF POWER MOSFET CONSIDERATIONS MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between the terminals. The metal anode gate structure determines the capacitors from gate-to-drain (Cgd), and gate- to-source (C gs ). The PN junction formed during the fabrication of the MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case the numbers are lower. However, neither method represents the actual operating conditions in RF applications. DRAIN Cgd GATE Cds Cgs Ciss = Cgd = Cgs Coss = Cgd = Cds Crss = Cgd SOURCE LINEARITY AND GAIN CHARACTERISTICS In addition to the typical IMD and power gain data presented, Figure 6 may give the designer additional information on the capabilities of this device. The graph represents the small signal unity current gain frequency at a given drain current level. This is equivalent to fT for bipolar transistors. Since this test is performed at a fast sweep speed, heating of the device does not occur. Thus, in normal use, the higher temperatures may degrade these characteristics to some extent. DRAIN CHARACTERISTICS One figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, VDS(on), occurs in the linear region of the output characteristic and is specified under specific test conditions for gate-source voltage and drain current. For MOSFETs, VDS(on) has a positive temperature coefficient and constitutes an important design consideration at high temperatures, because it contributes to the power dissipation within the device. GATE CHARACTERISTICS The gate of the MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high -- on the order of 109 ohms -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage slightly in excess of the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gate of this device is essentially capacitor. Circuits that leave the gate open-circuited or float- ing should be avoided. These conditions can result in turn- on of the device due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- This device does not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate-to-source impedance low also helps damp transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate-drain capacitance. If the gate-to-source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate-threshold voltage and turn the device on. HANDLING CONSIDERATIONS When shipping, the devices should be transported only in antistatic bags or conductive foam. Upon removal from the packaging, careful handling procedures should be adhered to. Those handling the devices should wear grounding straps and devices not in the antistatic packaging should be kept in metal tote bins. MOSFETs should be handled by the case and not by the leads, and when testing the device, all leads should make good electrical contact before voltage is applied. As a final note, when placing the FET into the system it is designed for, soldering should be done with a grounded iron. DESIGN CONSIDERATIONS The MRF151 is an RF Power, MOS, N-channel enhancement mode field-effect transistor (FET) designed for HF and VHF power amplifier applications. Motorola Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs. The major advantages of RF power MOSFETs include high gain, low noise, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. Power output can be varied over a wide range with a low power dc control signal. DC BIAS The MRF151 is an enhancement mode FET and, therefore, does not conduct when drain voltage is applied. Drain current flows when a positive voltage is applied to the gate. RF power FETs require forward bias for optimum performance. The value of quiescent drain current (IDQ) is not critical for many applications. The MRF151 was characterized at IDQ = 250 mA, each side, which is the suggested minimum value of IDQ. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may be just a simple resistive divider network. Some applications may require a more elaborate bias system. GAIN CONTROL Power output of the MRF151 may be controlled from its rated value down to zero (negative gain) by varying the dc gate voltage. This feature facilitates the design of manual gain control, AGC/ALC and modulation systems. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF151 5.2-57 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET MRF151G Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. * Guaranteed Performance at 175 MHz, 50 V: Output Power -- 300 W Gain -- 14 dB (16 dB Typ) Efficiency -- 50% 300 W, 50 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFET * Low Thermal Resistance -- 0.35C/W * Ruggedness Tested at Rated Output Power * Nitride Passivated Die for Enhanced Reliability * S-Parameters Available for Download into Frequency Domain Simulators. See http://motorola.com/sps/rf/designtds/ D G S (FLANGE) G CASE 375-04, STYLE 2 D MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 125 Vdc Drain-Gate Voltage VDGO 125 Vdc VGS 40 Vdc Drain Current -- Continuous ID 40 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 500 2.85 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Symbol Max Unit RJC 0.35 C/W Gate-Source Voltage Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 9 MRF151G 5.2-58 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit V(BR)DSS 125 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) IDSS -- -- 5.0 mAdc Gate-Body Leakage Current (VGS = 20 V, VDS = 0) IGSS -- -- 1.0 Adc Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) VGS(th) 1.0 3.0 5.0 Vdc Drain-Source On-Voltage (VGS = 10 V, ID = 10 A) VDS(on) 1.0 3.0 5.0 Vdc gfs 5.0 7.0 -- mhos Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Ciss -- 350 -- pF Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Coss -- 220 -- pF Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Crss -- 15 -- pF Common Source Amplifier Power Gain (VDD = 50 V, Pout = 300 W, IDQ = 500 mA, f = 175 MHz) Gps 14 16 -- dB Drain Efficiency (VDD = 50 V, Pout = 300 W, f = 175 MHz, ID (Max) = 11 A) 50 55 -- % Load Mismatch (VDD = 50 V, Pout = 300 W, IDQ = 500 mA, VSWR 5:1 at all Phase Angles) OFF CHARACTERISTICS (Each Side) Drain-Source Breakdown Voltage (VGS = 0, ID = 100 mA) ON CHARACTERISTICS (Each Side) Forward Transconductance (VDS = 10 V, ID = 5.0 A) DYNAMIC CHARACTERISTICS (Each Side) FUNCTIONAL TESTS No Degradation in Output Power R1 L2 + C4 BIAS 0 - 6 V C5 C9 + C10 C11 - 50 V - L1 R2 C1 INPUT T2 D.U.T. OUTPUT C12 T1 C6 C2 C3 C7 R1 -- 100 Ohms, 1/2 W R2 -- 1.0 kOhm, 1/2 W C1 -- Arco 424 C2 -- Arco 404 C3, C4, C7, C8, C9 -- 1000 pF Chip C5, C10 -- 0.1 F Chip C6 -- 330 pF Chip C11 -- 0.47 F Ceramic Chip, Kemet 1215 or C11 -- Equivalent (100 V) C12 -- Arco 422 L1 -- 10 Turns AWG #18 Enameled Wire, L1 -- Close Wound, 1/4 I.D. L2 -- Ferrite Beads of Suitable Material for L2 -- 1.5 - 2.0 H Total Inductance C8 T1 -- 9:1 RF Transformer. Can be made of 15 - 18 Ohms T1 -- Semirigid Co-Ax, 62 - 90 Mils O.D. T2 -- 1:4 RF Transformer. Can be made of 16 - 18 Ohms T2 -- Semirigid Co-Ax, 70-90 Mils O.D. Board Material -- 0.062 Fiberglass (G10), 1 oz. Copper Clad, 2 Sides, r = 5.0 NOTE: For stability, the input transformer T1 must be loaded NOTE: with ferrite toroids or beads to increase the common NOTE: mode inductance. For operation below 100 MHz. The NOTE: same is required for the output transformer. Unless Otherwise Noted, All Chip Capacitors are ATC Type 100 or Equivalent. See Figure 6 for construction details of T1 and T2. Figure 1. 175 MHz Test Circuit MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF151G 5.2-59 TYPICAL CHARACTERISTICS 2000 500 Ciss 200 Coss 100 1000 50 Crss 20 0 VDS = 30 V f T, UNITY GAIN FREQUENCY (MHz) C, CAPACITANCE (pF) 1000 0 10 20 30 40 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 0 50 Figure 2. Capacitance versus Drain-Source Voltage* 15 V 0 2 4 8 12 6 10 14 ID, DRAIN CURRENT (AMPS) 16 18 20 Figure 3. Common Source Unity Gain Frequency versus Drain Current* 1.04 1.03 1.02 1.01 1 0.99 0.98 0.97 0.96 0.95 0.94 0.93 0.92 0.91 0.9 - 25 100 ID = 5 A I D, DRAIN CURRENT (AMPS) VGS , DRAIN-SOURCE VOLTAGE (NORMALIZED) *Data shown applies to each half of MRF151G. 4A 2A 1A TC = 25C 10 250 mA 0 100 mA 25 50 75 TC, CASE TEMPERATURE (C) 100 1 2 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4. Gate-Source Voltage versus Case Temperature* HIGH IMPEDANCE WINDINGS 200 Figure 5. DC Safe Operating Area 9:1 IMPEDANCE RATIO CENTER TAP CENTER TAP 4:1 IMPEDANCE RATIO CONNECTIONS TO LOW IMPEDANCE WINDINGS Figure 6. RF Transformer MRF151G 5.2-60 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA TYPICAL CHARACTERISTICS 350 300 200 MHz 25 GPS, POWER GAIN (dB) Pout , OUTPUT POWER (WATTS) 30 175 MHz f = 150 MHz 250 200 150 VDD = 50 V IDQ = 2 x 250 mA 100 20 15 VDD = 50 V IDQ = 2 x 250 mA Pout = 150 W 10 50 0 0 5 Pin, INPUT POWER (WATTS) 5 10 2 Figure 7. Output Power versus Input Power 5 10 30 f, FREQUENCY (MHz) 100 200 Figure 8. Power Gain versus Frequency f = 175 MHz 150 125 100 INPUT, Zin (GATE TO GATE) Zo = 10 30 125 150 f = 175 MHz 100 30 OUTPUT, ZOL* (DRAIN TO DRAIN) ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a ZOL* = given output power, voltage and frequency. Figure 9. Input and Output Impedance MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF151G 5.2-61 NOTE: S-Parameter data represents measurements taken from one chip only. AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA Table 1. Common Source S-Parameters (VDS = 50 V, ID = 2 A) S11 f MHz |S11| 30 0.877 40 S21 S22 |S21| |S12| |S22| -174 10.10 77 0.008 19 0.707 -169 0.886 -175 7.47 69 0.009 24 0.715 -172 50 0.895 -175 5.76 63 0.008 33 0.756 -171 60 0.902 -176 4.73 58 0.009 39 0.764 -171 70 0.912 -176 3.86 52 0.009 46 0.784 -172 80 0.918 -177 3.19 48 0.010 54 0.802 -171 90 0.925 -177 2.69 45 0.011 62 0.808 -171 100 0.932 -177 2.34 40 0.013 67 0.850 -173 110 0.936 -178 2.06 37 0.014 72 0.865 -175 120 0.942 -178 1.77 35 0.015 76 0.875 -173 130 0.946 -179 1.55 32 0.017 77 0.874 -172 140 0.950 -179 1.39 30 0.019 77 0.884 -174 150 0.954 -180 1.23 27 0.021 78 0.909 -175 160 0.957 -180 1.13 24 0.023 79 0.911 -176 170 0.960 180 1.01 22 0.024 82 0.904 -177 180 0.962 179 0.90 20 0.026 82 0.931 -176 190 0.964 179 0.84 19 0.028 80 0.929 -178 200 0.967 179 0.75 18 0.030 79 0.922 -179 210 0.967 178 0.71 16 0.032 80 0.937 -180 220 0.969 178 0.67 14 0.035 82 0.949 180 230 0.971 178 0.60 12 0.038 81 0.950 179 240 0.970 177 0.57 12 0.037 80 0.950 179 250 0.972 177 0.51 12 0.039 80 0.935 179 260 0.973 177 0.47 11 0.041 79 0.954 178 270 0.972 176 0.45 9 0.044 80 0.953 176 280 0.974 176 0.41 9 0.046 80 0.965 175 290 0.974 176 0.40 6 0.046 79 0.944 175 300 0.975 176 0.39 10 0.048 82 0.929 176 310 0.976 175 0.36 9 0.049 82 0.943 176 320 0.974 175 0.33 7 0.053 78 0.954 173 330 0.975 174 0.31 4 0.056 78 0.935 172 340 0.976 174 0.30 10 0.056 77 0.948 172 350 0.975 174 0.29 7 0.058 80 0.950 174 360 0.977 174 0.28 8 0.059 79 0.978 172 370 0.976 173 0.26 8 0.061 76 0.981 170 380 0.976 173 0.26 7 0.065 75 0.944 171 390 0.977 173 0.24 10 0.066 76 0.960 171 400 0.976 172 0.23 7 0.068 80 0.955 173 410 0.976 172 0.22 9 0.071 77 0.999 170 420 0.977 172 0.21 9 0.071 76 0.962 168 430 0.976 171 0.19 10 0.073 76 0.950 168 MRF151G 5.2-62 S12 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA Table 1. Common Source S-Parameters (VDS = 50 V, ID = 2 A) (continued) S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 440 0.976 171 0.20 12 0.075 75 0.953 168 450 0.978 171 0.19 10 0.080 77 0.982 168 460 0.978 170 0.18 13 0.082 74 0.990 165 470 0.978 170 0.18 10 0.081 77 0.953 168 480 0.974 170 0.18 13 0.085 78 0.944 167 490 0.973 169 0.17 13 0.086 75 0.966 165 500 0.972 169 0.17 14 0.089 73 0.980 165 Table 2. Common Source S-Parameters (VDS = 50 V, ID = 0.38 A) S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 30 0.834 -168 9.70 74 0.014 -10 0.747 -162 40 0.869 -169 6.47 62 0.013 -19 0.731 -159 50 0.883 -170 5.13 55 0.012 -24 0.754 -161 60 0.892 -171 4.03 51 0.011 -24 0.823 -164 70 0.901 -172 3.39 50 0.010 -20 0.912 -167 80 0.911 -173 2.80 47 0.009 -16 0.996 -168 90 0.924 -173 2.39 42 0.008 -14 1.100 -167 100 0.935 -174 1.99 35 0.006 -15 1.100 -167 110 0.945 -174 1.67 29 0.005 -17 1.070 -169 120 0.953 -175 1.36 25 0.004 -10 0.988 -167 130 0.958 -175 1.14 23 0.004 4 0.934 -169 140 0.962 -176 1.01 23 0.004 26 0.935 -170 150 0.964 -177 0.93 24 0.004 45 0.983 -172 160 0.966 -177 0.85 24 0.004 58 1.080 -173 170 0.969 -178 0.79 21 0.005 61 1.170 -173 180 0.972 -178 0.74 17 0.006 57 1.250 -173 190 0.975 -178 0.65 10 0.007 56 1.210 -174 200 0.977 -179 0.56 8 0.008 63 1.110 -174 210 0.979 -179 0.50 7 0.008 72 1.010 -174 220 0.980 -179 0.44 9 0.008 81 0.958 -172 230 0.980 -180 0.41 9 0.009 79 1.020 -175 240 0.981 180 0.38 12 0.009 74 1.020 -178 250 0.982 180 0.38 11 0.011 74 1.060 -176 260 0.983 179 0.34 8 0.014 76 1.180 -179 270 0.984 179 0.34 4 0.014 80 1.220 -180 280 0.984 179 0.30 3 0.013 79 1.180 -179 290 0.984 178 0.27 -4 0.012 73 1.040 -177 300 0.984 178 0.25 0 0.014 69 0.996 -178 310 0.984 178 0.24 4 0.017 74 0.951 -178 320 0.985 177 0.23 7 0.019 83 0.964 179 330 0.985 177 0.20 3 0.019 90 1.060 180 340 0.986 177 0.22 7 0.017 87 1.100 179 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF151G 5.2-63 AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA Table 2. Common Source S-Parameters (VDS = 50 V, ID = 0.38 A) (continued) S11 S21 f MHz |S11| |S21| 350 0.986 177 0.20 360 0.986 176 0.19 370 0.985 176 0.17 380 0.985 176 390 0.985 400 410 S12 |S12| |S22| 5 0.017 76 1.140 -180 -2 0.021 67 1.160 180 -3 0.024 69 1.100 180 0.16 -3 0.024 77 1.070 -180 176 0.15 0 0.021 85 0.993 -180 0.985 175 0.14 3 0.018 85 0.962 -180 0.985 175 0.14 2 0.021 72 1.040 179 420 0.986 175 0.13 5 0.027 68 1.060 177 430 0.986 174 0.13 4 0.031 73 1.100 177 440 0.986 174 0.13 0 0.030 81 1.140 177 450 0.985 174 0.13 -1 0.025 87 1.110 178 460 0.984 174 0.11 -2 0.022 68 1.090 176 470 0.984 174 0.10 -1 0.025 59 1.020 177 480 0.985 173 0.10 3 0.034 66 0.993 179 490 0.986 173 0.10 1 0.038 79 1.020 178 500 0.986 173 0.10 6 0.035 93 1.010 177 MRF151G 5.2-64 S22 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA RF POWER MOSFET CONSIDERATIONS MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between the terminals. The metal anode gate structure determines the capacitors from gate-to-drain (Cgd), and gate- to-source (C gs ). The PN junction formed during the fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case the numbers are lower. However, neither method represents the actual operating conditions in RF applications. DRAIN Cgd GATE Cds Cgs Ciss = Cgd = Cgs Coss = Cgd = Cds Crss = Cgd SOURCE LINEARITY AND GAIN CHARACTERISTICS In addition to the typical IMD and power gain data presented, Figure 3 may give the designer additional information on the capabilities of this device. The graph represents the small signal unity current gain frequency at a given drain current level. This is equivalent to fT for bipolar transistors. Since this test is performed at a fast sweep speed, heating of the device does not occur. Thus, in normal use, the higher temperatures may degrade these characteristics to some extent. DRAIN CHARACTERISTICS One figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, VDS(on), occurs in the linear region of the output characteristic and is specified under specific test conditions for gate-source voltage and drain current. For MOSFETs, VDS(on) has a positive temperature coefficient and constitutes an important design consideration at high temperatures, because it contributes to the power dissipation within the device. GATE CHARACTERISTICS The gate of the MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high -- on the order of 109 ohms -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage slightly in excess of the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open-cir- cuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate-to-source impedance low also helps damp transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate-drain capacitance. If the gate-to-source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate-threshold voltage and turn the device on. HANDLING CONSIDERATIONS When shipping, the devices should be transported only in antistatic bags or conductive foam. Upon removal from the packaging, careful handling procedures should be adhered to. Those handling the devices should wear grounding straps and devices not in the antistatic packaging should be kept in metal tote bins. MOSFETs should be handled by the case and not by the leads, and when testing the device, all leads should make good electrical contact before voltage is applied. As a final note, when placing the FET into the system it is designed for, soldering should be done with a grounded iron. DESIGN CONSIDERATIONS The MRF151G is an RF Power, MOS, N-channel enhancement mode field-effect transistor (FET) designed for HF and VHF power amplifier applications. Motorola Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs. The major advantages of RF power MOSFETs include high gain, low noise, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. Power output can be varied over a wide range with a low power dc control signal. DC BIAS The MRF151G is an enhancement mode FET and, therefore, does not conduct when drain voltage is applied. Drain current flows when a positive voltage is applied to the gate. RF power FETs require forward bias for optimum performance. The value of quiescent drain current (IDQ) is not critical for many applications. The MRF151G was characterized at IDQ = 250 mA, each side, which is the suggested minimum value of IDQ. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may be just a simple resistive divider network. Some applications may require a more elaborate bias system. GAIN CONTROL Power output of the MRF151G may be controlled from its rated value down to zero (negative gain) by varying the dc gate voltage. This feature facilitates the design of manual gain control, AGC/ALC and modulation systems. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF151G 5.2-65 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF154 N-Channel Enhancement-Mode MOSFET Designed primarily for linear large-signal output stages in the 2.0 - 100 MHz frequency range. * Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 17 dB (Typ) Efficiency = 45% (Typ) 600 W, 50 V, 80 MHz N-CHANNEL BROADBAND RF POWER MOSFET D G CASE 368-03, STYLE 2 (HOG PAC) S MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 125 Vdc Drain-Gate Voltage VDGO 125 Vdc VGS 40 Vdc Drain Current -- Continuous ID 60 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 1350 7.7 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Symbol Max Unit RJC 0.13 C/W Gate-Source Voltage Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Handling and Packaging -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 2 MRF154 5.2-66 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 125 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) IDSS -- -- 20 mAdc Gate-Body Leakage Current (VGS = 20 V, VDS = 0) IGSS -- -- 5.0 Adc Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) VGS(th) 1.0 3.0 5.0 Vdc Drain-Source On-Voltage (VGS = 10 V, ID = 40 A) VDS(on) 1.0 3.0 5.0 Vdc Forward Transconductance (VDS = 10 V, ID = 20 A) gfs 16 20 -- mhos Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Ciss -- 1600 -- pF Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Coss -- 950 -- pF Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Crss -- 175 -- pF Common Source Amplifier Power Gain (VDD = 50 V, Pout = 600 W, IDQ = 800 mA, f = 30 MHz) Gps -- 17 -- dB Drain Efficiency (VDD = 50 V, Pout = 600 W, IDQ = 800 mA, f = 30 MHz) -- 45 -- % IMD(d3) -- - 25 -- dB C20 C21 50 V - OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 100 mA) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS Intermodulation Distortion (VDD = 50 V, Pout = 600 W (PEP), f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 800 mA) 0-6 V + - + R1 C5 L2 C6 L3 DUT R2 C14 C4 C15 C16 C17 C18 C19 L1 RF INPUT C10 C3 C1 C2 C11 C12 C7 C13 C9 T1 C1, C3, C8 -- Arco 469 C2 -- 330 pF C4 -- 680 pF C5, C19, C20 -- 0.47 F, RMC Type 2225C C6, C7, C14, C15, C16 -- 0.1 F C9, C10, C11 -- 470 pF C12 -- 1000 pF C13 -- Two Unencapsulated 1000 pF Mica, in Series C17, C18 -- 0.039 F C21 -- 10 F/100 V Electrolytic L1 -- 2 Turns #16 AWG, 1/2 ID, 3/8 Long L2, L3 -- Ferrite Beads, Fair-Rite Products Corp. #2673000801 RF OUTPUT C8 R1, R2 -- 10 Ohms/2.0 W Carbon T1 -- RF Transformer, 1:25 Impedance Ratio. See Motorola T1 -- Application Note AN749, Figure 4 for details. T1 -- Ferrite Material: 2 Each, Fair-Rite Products T1 -- Corp. #2667540001 All capacitors ATC type 100/200 chips or equivalent unless otherwise noted. Figure 1. 30 MHz Test Circuit MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF154 5.2-67 800 VDD = 50 V Pout , OUTPUT POWER (WATTS) 600 15 10 VDD = 50 V IDQ = 800 mA Pout = 600 W 5 400 40 V 200 0 0 10 (IDQ = 800 mA) 800 600 400 VDD = 50 V 200 0 2 5 10 20 50 f, FREQUENCY (MHz) 100 0 200 40 V 0 Figure 2. Power Gain versus Frequency 100 50 Pin, INPUT POWER (WATTS) Figure 3. Output Power versus Input Power 100 10,000 VGS = 0 V f = 1 MHz 5000 TC = 25C C, CAPACITANCE (pF) I D, DRAIN CURRENT (AMPS) 20 100 MHz POWER GAIN (dB) 20 30 MHz 25 10 Ciss 2000 Coss 1000 500 Crss 200 1 2 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 100 200 1 Figure 4. DC Safe Operating Area 50 100 600 f t , UNITY GAIN FREQUENCY (MHz) IDS , DRAIN CURRENT (AMPS) 5 10 20 VDS, DRAIN VOLTAGE (VOLTS) Figure 5. Capacitance versus Drain Voltage 40 TYPICAL DEVICE SHOWN VDS = 10 V VGS(th) = 3.5 V gfs = 24 mhos 30 20 10 0 2 0 2 4 6 VGS, GATE-SOURCE VOLTAGE (VOLTS) 8 Figure 6. Gate Voltage versus Drain Current MRF154 5.2-68 500 VDS = 30 V 400 15 V 300 200 100 0 0 20 40 ID, DRAIN CURRENT (AMPS) 60 Figure 7. Common Source Unity Gain Frequency versus Drain Current MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA f = 100 MHz 60 30 15 Zin VDD = 50 V IDQ = 800 mA Pout = 600 W 7.5 4.0 2.0 Zo = 10 Figure 8. Series Equivalent Impedance BIAS - R13 D2 30 - 40 V + L1 C10 L2 R9 D.U.T. R1 + C5 C2 R5 C4 C8 R6 R4 INPUT R11 IC1 R12 R7 C1 + 40 V - XTR XTR OUTPUT C6 C7 T1 R3 C9 T2 D1 D3 R10 D.U.T. R2 C3 R14 C11 R8 TEMP. TRACKING C1 -- 1000 pF Ceramic C2, C3, C4, C8, C9, C10, C11 -- 0.1 F Ceramic C5 -- 10 F/100 V Electrolytic C6, C7 -- 0.1 F Ceramic, (ATC 200/823 or Equivalent) D1 -- 28 V Zener, 1N5362 or Equivalent D3 -- 1N4148 IC1 -- MC1723 L1, L2 -- Fair-Rite Products Corp. Ferrite Beads #2673000801 R1, R2, R3 -- 10 k Trimpot R4 -- 1.0 k/1.0 W R5 -- 10 Ohms R6 -- 2.0 k R7 -- 10 k R8 -- Thermistor, 10 k (25C), 2.5 k (75C) R9, R10 -- 100 Ohms R11, R12 -- 1.0 k R13, R14 -- 50 - 100 Ohms, 4.0 x 2.0 W Carbon in Parallel T1 -- 9:1 Transformer, Trifilar and Balun Wound on Separate T1 -- Fair-Rite Products Corp. Balun Cores #286100012, 5 Turns Each. T2 -- 1:9 Transformer, Balun 50 Ohm CO-AX Cable RG-188, T2 -- Low Impedance Lines W.L. Gore 16 Ohms CO-AX Type CXN 1837. T2 -- Each Winding Threaded Through Two Fair-Rite Products Corp. T2 -- #2661540001 Ferrite Sleeves (6 Each). XTR -- MRF154 Figure 9. 20 - 80 MHz 1.0 kW Broadband Amplifier MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF154 5.2-69 RF POWER MOSFET CONSIDERATIONS MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between the terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to- source (Cgs). The PN junction formed during the fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case the numbers are lower. However, neither method represents the actual operating conditions in RF applications. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high -- on the order of 109 ohms -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage slightly in excess of the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended. DRAIN Cgd GATE Cds Cgs Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd SOURCE LINEARITY AND GAIN CHARACTERISTICS In addition to the typical IMD and power gain data presented, Figure 5 may give the designer additional information on the capabilities of this device. The graph represents the small signal unity current gain frequency at a given drain current level. This is equivalent to fT for bipolar transistors. Since this test is performed at a fast sweep speed, heating of the device does not occur. Thus, in normal use, the higher temperatures may degrade these characteristics to some extent. DRAIN CHARACTERISTICS One figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, VDS(on), occurs in the linear region of the output characteristic and is specified under specific test conditions for gate-source voltage and drain current. For MOSFETs, VDS(on) has a positive temperature coefficient and constitutes an important design consideration at high temperatures, because it contributes to the power dissipation within the device. MRF154 5.2-70 MOUNTING OF HIGH POWER RF POWER TRANSISTORS The package of this device is designed for conduction cooling. It is extremely important to minimize the thermal resistance between the device flange and the heat dissipator. Since the device mounting flange is made of soft copper, it may be deformed during various stages of handling or during transportation. It is recommended that the user makes a final inspection on this before the device installation. 0.0005 is considered sufficient for the flange bottom. The same applies to the heat dissipator in the device mounting area. If copper heatsink is not used, a copper head spreader is strongly recommended between the device mounting surfaces and the main heatsink. It should be at least 1/4 thick and extend at least one inch from the flange edges. A thin layer of thermal compound in all interfaces is, of course, essential. The recommended torque on the 4-40 mounting screws should be in the area of 4 - 5 lbs.-inch, and spring type lock washers along with flat washers are recommended. For die temperature calculations, the temperature from a corner mounting screw area to the bottom center of the flange is approximately 5C and 10C under normal operating conditions (dissipation 150 W and 300 W respectively). The main heat dissipator must be sufficiently large and have low R for moderate air velocity, unless liquid cooling is employed. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CIRCUIT CONSIDERATIONS At high power levels (500 W and up), the circuit layout becomes critical due to the low impedance levels and high RF currents associated with the output matching. Some of the components, such as capacitors and inductors must also withstand these currents. The component losses are directly proportional to the operating frequency. The manufacturers specifications on capacitor ratings should be consulted on these aspects prior to design. Push-pull circuits are less critical in general, since the ground referenced RF loops are practically eliminated, and the impedance levels are higher for a given power output. High power broadband transformers are also easier to design than comparable LC matching networks. EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY Collector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Emitter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Base . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V(BR)CES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VBE(on) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCE(sat) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Cib . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Cob . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . hfe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . RCE(sat) = Drain Source Gate V(BR)DSS VDGO ID IDSS IGSS VGS(th) VDS(on) Ciss Coss gfs VDS(on) VCE(sat) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . r DS(on) = ID IC MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF154 5.2-71 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Power MOS Line Power Field Effect Transistor MRF157 N-Channel Enhancement Mode Designed primarily for linear large-signal output stages to 80 MHz. * Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts Power Gain = 21 dB (Typ) Efficiency = 45% (Typ) 600 W, to 80 MHz MOS LINEAR RF POWER FET D G S CASE 368-03, STYLE 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 125 Vdc Drain-Gate Voltage VDGO 125 Vdc VGS 40 Vdc Drain Current -- Continuous ID 60 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 1350 7.7 Watts W/C Storage Temperature Range Tstg - 65 to + 150 C TJ 200 C Symbol Max Unit RJC 0.13 C/W Gate-Source Voltage Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MRF157 5.2-72 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 125 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) IDSS -- -- 20 mAdc Gate-Body Leakage Current (VGS = 20 V, VDS = 0) IGSS -- -- 5.0 Adc Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) VGS(th) 1.0 3.0 5.0 Vdc Drain-Source On-Voltage (VGS = 10 V, ID = 40 A) VDS(on) 1.0 3.0 5.0 Vdc Forward Transconductance (VDS = 10 V, ID = 20 A) gfs 16 24 -- mhos Input Capacitance (VDS = 50 V, VGS = 0 V, f = 1.0 MHz) Ciss -- 1800 -- pF Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Coss -- 750 -- pF Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz) Crss -- 75 -- pF Common Source Amplifier Power Gain (VDD = 50 V, Pout = 600 W, IDQ = 800 mA, f = 30 MHz) Gps 15 21 -- dB Drain Efficiency (VDD = 50 V, Pout = 600 W, f = 30 MHz, IDQ = 800 mA) h 40 45 -- % IMD(d3) -- - 25 -- dB OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 100 mA) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS Intermodulation Distortion (VDD = 50 V, Pout = 600 W(PEP), f1 = 30 MHz, f2 = 30.001 MHz, IDQ = 800 mA) 0-6 V C20 C21 + + - R1 C5 C6 R2 C4 RF INPUT L1 C1 C2 L2 C15 C16 C17 C18 C3 D.U.T. + 50 V - C19 C14 C7 L3 C10 C11 C12 C13 C9 T1 C1, C3, C8 -- Arco 469 C2 -- 330 pF C4 -- 680 pF C5, C19, C20 -- 0.47 F, RMC Type 2225C C6, C7, C14, C15, C16 -- 0.1 F C9, C10, C11 -- 470 pF C12 -- 1000 pF C13 -- Two Unencapsulated 1000 pF Mica, in Series C17, C18 -- 0.039 F C21 -- 10 F/100 V Electrolytic L1 -- 2 Turns #16 AWG, 1/2 ID, 3/8 Long L2, L3 -- Ferrite Beads, Fair-Rite Products Corp. #2673000801 RF OUTPUT C8 R1, R2 -- 10 Ohms/2W Carbon T1 -- RF Transformer, 1:25 Impedance Ratio. See Motorola T1 -- Application Note AN749, Figure 4 for details. T1 -- Ferrite Material: 2 Each, Fair-Rite Products T1 -- Corp. #2667540001 All capacitors ATC type 100/200 chips or equivalent unless otherwise noted. Figure 1. 30 MHz Test Circuit MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF157 5.2-73 800 POWER GAIN (dB) 20 15 VDD = 50 V IDQ = 800 mA Pout = 600 W 10 5 30 MHz 25 VDS = 50 V 600 40 V 400 200 0 0 4 8 12 16 IDQ = 800 mA 800 VDS = 50 V 600 400 80 MHz Pout , OUTPUT POWER (WATTS) 30 40 V 200 0 1 2 5 10 20 f, FREQUENCY (MHz) 50 0 100 0 Figure 2. Power Gain versus Frequency Ciss 2000 C, CAPACITANCE (pF) ID , DRAIN CURRENT (AMPS) 5000 TC = 25C 10 Coss 1000 500 200 VGS = 0 V f = 1 MHz 100 2 20 50 200 1 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) IDS, DRAIN CURRENT (AMPS) 40 TYPICAL DEVICE SHOWN VDS = 10 V VGS(th) = 3.5 V gfs = 24 mhos 30 20 10 0 2 4 6 VGS, GATE-SOURCE VOLTAGE (VOLTS) 8 Figure 6. Gate Voltage versus Drain Current MRF157 5.2-74 2 Crss 5 10 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 50 100 Figure 5. Capacitance versus Drain Voltage VGS, GATE-SOURCE VOLTAGE (NORMALIZED) Figure 4. DC Safe Operating Area 0 80 Figure 3. Output Power versus Input Power 100 1 40 Pin, INPUT POWER (WATTS) 1.04 1.03 1.02 1.01 1 0.99 0.98 0.97 0.96 0.95 0.94 0.93 0.92 0.91 0.9 -25 ID = 20 A 16 A 8A 4A 0.4 A 0 25 50 TC, CASE TEMPERATURE (C) 1A 75 100 Figure 7. Gate-Source Voltage versus Case Temperature MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA VDD = 60 V IDQ = 2 x 800 mA f = 30 MHz t1 = 1 ms (See Fig. 9) t2 = 10 ms (See Fig. 9) 3 2 1 0 0 20 40 60 80 100 Pin, POWER INPUT (WATTS) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Pout , POWER OUTPUT (kW) 4 1 D = 0.5 0.5 0.2 RJC(t) = r(t) RJC RJC = 0.13C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 0.2 0.1 0.1 0.05 0.05 0.02 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.02 SINGLE PULSE 0.01 10-2 10-1 1 10 102 103 104 PULSE WIDTH, t (ms) Figure 8. Output Power versus Input Power Under Pulse Conditions (2 x MRF157) Figure 9. Thermal Response versus Pulse Width Note: Pulse data for this graph was taken in a push-pull circuit similar Note: to the one shown. However, the output matching network was Note: modified for the higher level of peak power. f = 100 MHz 60 30 15 Zin 7.5 4.0 VDD = 50 V IDQ = 800 mA Pout = 600 W 2.0 Zo = 10 Note: To determine ZOL*, use formula (VCC - Vsat)2 = ZOL* 2 Po Figure 10. Series Equivalent Impedance MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF157 5.2-75 + 50 V - C13 D2 R10 D.U.T. L3 R1 C3 R12 OUTPUT C7 R14 L1 22 pF C9 C11 L2 T1 L2 C12 R15 C8 - BIAS 36-50 V + D3 R11 T2 R2 R5 C4 R4 10 12 11 13 C1 D1 C10 C14 2 3 7 6 R6 4 R7 5 R3 R8 C2 R9 R13 D.U.T. C1 -- 1000 pF Ceramic Disc Capacitor C2, C3, C4 -- 0.1 F Ceramic Disc Capacitor C5 -- 0.01 F Ceramic Chip Capacitor C6, C12 -- 0.1 F Ceramic Chip Capacitor C7, C8 -- Two 2200 pF Ceramic Chip Capacitors in Parallel C7, C8 -- Each C9 -- 820 pF Ceramic Chip Capacitor C10, C11 -- 1000 pF Ceramic Chip Capacitor C13 -- 0.47 F Ceramic Chip Capacitor or Two Smaller C13 --Values in Parallel C14 -- Unencapsulated Mica, 500 V. Two 1000 pF Units C14 -- in Series, Mounted Under T2 D1 -- 1N5357A or Equivalent D2, D3 -- 1N4148 or Equivalent. IC1 -- MC1723 (723) Voltage Regulator L1, L2 -- 15 H, Connecting Wires to R14 and R15, L1, L2 -- 2.5 cm Each #20 AWG L3 -- 10 H, 10 Turns #12 AWG Enameled Wire on L3 -- Fair-Rite Products Corp. Ferrite Toroid #5961000401 or Equivalent R1 , R2 -- 1.0K Single Turn Trimpots R3 -- 10K Single Turn Trimpot R4 -- 470 Ohms, 2.0 Watts R5 -- 10 Ohms R6, R12, R13 -- 2.0K Ohms R7 -- 10K Ohms R8 -- Exact Value Depends on Thermistor R9 used R8 -- (Typically 5.0 - 10K) R9 -- Thermistor, Keystone RL1009-5820-97-D1 or R9 -- Equivalent R10, R11 -- 100 Ohms, 1.0W Carbon R14, R15 -- EMC Technology Model 5308 or KDI R14, R15 -- Pyrofilm PPR 870-150-3 Power Resistors, R14, R15 -- 25 Ohms T1, T2 -- 9:1 and 1:9 Impedance Ratio RF Transformers Unless otherwise noted, all resistors are 1/2 watt metal film type. All chip capacitors except C13 are ATC type 100/200B or Dielectric Laboratories type C17. Figure 11. 2.0 to 50 MHz, 1.0 kW Wideband Amplifier RF POWER MOSFET CONSIDERATIONS MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between the terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to- source (Cgs). The PN junction formed during the fabrication of the TMOS FET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the interterminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case the numbers are lower. However, neither method represents the actual operating conditions in RF applications. DRAIN Cgd Cds GATE Cgs SOURCE MRF157 5.2-76 Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd LINEARITY AND GAIN CHARACTERISTICS In addition to the typical IMD and power gain data presented, Figure 5 may give the designer additional information on the capabilities of this device. The graph represents the small signal unity current gain frequency at a given drain current level. This is equivalent to fT for bipolar transistors. Since this test is performed at a fast sweep speed, heating of the device does not occur. Thus, in normal use, the higher temperatures may degrade these characteristics to some extent. DRAIN CHARACTERISTICS One figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, VDS(on), occurs in the linear region of the output characteristic and is specified under specific test conditions for gate-source voltage and drain current. For MOSFETs, VDS(on) has a positive temperature coefficient and constitutes an important design consideration at high temperatures, because it contributes to the power dissipation within the device. GATE CHARACTERISTICS The gate of the TMOS FET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high -- on the order of 109 ohms -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage slightly in excess of the gate-to-source threshold voltage, VGS(th). MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate-to-source. The addition of an internal zener diode may result in detrimental effects on the reliability of a power MOSFET. If gate protection is required, an external zener diode is recommended. IMPEDANCE CHARACTERISTICS Device input and output impedances are normally obtained by measuring their conjugates in an optimized narrow band test circuit. These test circuits are designed and constructed for a number of frequency points depending on the frequency coverage of characterization. For low frequencies the circuits consist of standard LC matching networks including variable capacitors for peak tuning. At increasing power levels the output impedance decreases, resulting in higher RF currents in the matching network. This makes the practicality of output impedance measurements in the manner described questionable at power levels higher than 200-300 W for devices operated at 50 V and 150-200 W for devices operated at 28 V. The physical sizes and values required for the components to withstand the RF currents increase to a point where physical construction of the output matching network gets difficult if not impossible. For this reason the output impedances are not given for high power devices such as the MRF154 and MRF157. However, formulas 2 like(VDS - Vsat) for a single ended design 2Pout 2 or2((VDS - Vsat) ) for a push-pull design can be used to obPout tain reasonably close approximations to actual values. MOUNTING OF HIGH POWER RF POWER TRANSISTORS The package of this device is designed for conduction cooling. It is extremely important to minimize the thermal resistance between the device flange and the heat dissipator. If a copper heatsink is not used, a copper head spreader is strongly recommended between the device mounting surfaces and the main heatsink. It should be at least 1/4 thick and extend at least one inch from the flange edges. A thin layer of thermal compound in all interfaces is, of course, essential. The recommended torque on the 4 - 40 mounting screws should be in the area of 4 - 5 lbs.-inch, and spring type lock washers along with flat washers are recommended. For die temperature calculations, the temperature from a corner mounting screw area to the bottom center of the flange is approximately 5C and 10C under normal operating conditions (dissipation 150 W and 300 W respectively). The main heat dissipator must be sufficiently large and have low R for moderate air velocity, unless liquid cooling is employed. CIRCUIT CONSIDERATIONS At high power levels (500 W and up), the circuit layout becomes critical due to the low impedance levels and high RF currents associated with the output matching. Some of the components, such as capacitors and inductors must also withstand these currents. The component losses are directly proportional to the operating frequency. The manufacturers specifications on capacitor ratings should be consulted on these aspects prior to design. Push-pull circuits are less critical in general, since the ground referenced RF loops are practically eliminated, and the impedance levels are higher for a given power output. High power broadband transformers are also easier to design than comparable LC matching networks. EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY Collector Emitter Base V(BR)CES VCBO IC ICES IEBO VBE(on) VCE(sat) Cib Cob hfe VCE(sat) RCE(sat) = IC . . . . . . . . . . . . . . . . . Drain . . . . . . . . . . . . . . . . . Source . . . . . . . . . . . . . . . . . Gate . . . . . . . . . . . . . . . . . V(BR)DSS . . . . . . . . . . . . . . . . . VDGO . . . . . . . . . . . . . . . . . ID . . . . . . . . . . . . . . . . . IDSS . . . . . . . . . . . . . . . . . IGSS . . . . . . . . . . . . . . . . . VGS(th) . . . . . . . . . . . . . . . . . VDS(on) . . . . . . . . . . . . . . . . . Ciss . . . . . . . . . . . . . . . . . Coss . . . . . . . . . . . . . . . . . gfs VDS(on) .................. RDS(on) = ID MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF157 5.2-77 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N-Channel Enhancement Mode Designed for wideband large-signal amplifier and oscillator applications to 500 MHz. * Guaranteed 28 Volt, 500 MHz Performance Output Power = 2.0 Watts Minimum Gain = 16 dB (Min) Efficiency = 55% (Typ) To 500 MHz, 2 W, 28 V TMOS BROADBAND RF POWER FET * Facilitates Manual Gain Control, ALC and Modulation Techniques * 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR * Excellent Thermal Stability, Ideally Suited for Class A Operation * Circuit board sample available upon request by contacting RF Tactical Marketing in Tempe, AZ. * S-Parameters Available for Download into Frequency Domain Simulators. See http://mot-sps.com/rf/designtds/ D G CASE 305A-01, STYLE 2 S MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Rating VDSS 65 Vdc Drain-Gate Voltage (RGS = 1.0 M) VDGR 65 Vdc VGS 20 Vdc Drain Current -- Continuous ID 0.5 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 8.0 45 Watts mW/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Symbol Max Unit RJC 13.2 C/W Gate-Source Voltage Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 9 MRF158 5.2-78 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) IDSS -- -- 0.5 mAdc Gate-Source Leakage Current (VGS = 20 V, VDS = 0) IGSS -- -- 1.0 Adc VGS(th) 2.0 4.0 5.0 Vdc gfs 80 110 -- mmhos Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Ciss -- 3.0 -- pF Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Coss -- 4.0 -- pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Crss -- 0.45 -- pF Common Source Power Gain (VDD = 28 Vdc, Pout = 2.0 W, f = 500 MHz, IDQ = 25 mA) Gps 16 18 -- dB Drain Efficiency (Figure 1) (VDD = 28 Vdc, Pout = 2.0 W, f = 500 MHz, IDQ = 25 mA) 50 55 -- % Electrical Ruggedness (Figure 1) (VDD = 28 Vdc, Pout = 2.0 W, f = 500 MHz, IDQ = 25 mA, VSWR 30:1 at all Phase Angles) OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 1.0 mA) ON CHARACTERISTICS Gate Threshold Voltage (ID = 10 mA, VDS = 10 V) Forward Transconductance (VDS = 10 V, ID = 100 mA) DYNAMIC CHARACTERISTICS FUNCTIONAL CHARACTERISTICS (Figure 1) No Degradation in Output Power Series Equivalent Input Impedance (VDD = 28 V, Pout = 2.0 W, f = 500 MHz, IDQ = 25 mA) Zin -- 5.9 - j19.4 -- Ohms Series Equivalent Output Impedance (VDD = 28 V, Pout = 2.0 W, f = 500 MHz, IDQ = 25 mA) Zout -- 14.5 - j29 -- Ohms MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF158 5.2-79 R3 RFC1 C9 C10 VDD 28 V VDC + R2 C8 C7 C12 C13 + C11 - RFC2 R1 RF Output RF Input C1 C6 C5 DUT C4 C2 C1, C6, C12 C2, C5 C3 C4 C7, C8 C9, C10 C11 C13 C3 270 pF, Chip Capacitors 1 - 10 pF, Johanson Trimmer Capacitors 30 pF, 100 mil ATC Chip Capacitor 3.9 pF, 100 mil ATC Chip Capacitor 0.1 mF, Blue Capacitors 680 pF, Feed Through Capacitors 50 mF, 50 V Electrolytic Capacitor 240 pF, 100 mil ATC Chip Capacitor C2 110 mils from Outside Corner R1 R2 R3 RFC1 RFC2 150 , 1/2 Watt 10 k, 1/2 Watt 1 k, 1/2 Watt Ferroxcube VK200-19/4B 8 Turns, #20 AWG, Enameled, ID 110 mils Board Material -- 0.062, Teflon Fiberglass, 1 oz., Copper clad both sides, r = 2.55 C4 280 mils from Inside Corner Input Line 160 mils X 5315 mils Output Line 160 mils X 4345 mils C5 At Inside End of C6 C3 130 mils from Outside Corner NOTE: Due to variation in Chip Capacitor values and board material, these are approximate positions. Figure 1. MRF158 500 MHz Test Circuit MRF158 5.2-80 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Figure 2. MRF158 Broadband Test Fixture MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF158 5.2-81 TYPICAL CHARACTERISTICS 1 5 Coss 2 Ciss ID , DRAIN CURRENT (AMPS) C, CAPACITANCE (pF) 10 0.1 1 Crss 0.5 VGS = 0 V f = 1 MHz 0.2 0.1 0.01 0 5 25 10 15 20 VDS,DRAIN-SOURCE VOLTAGE (VOLTS) 1 Figure 4. DC Safe Operating Area 2.8 Pin = 80 mW Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) Figure 3. Capacitance versus Drain-Source Voltage 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 100 10 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) f = 500 MHz VDS = 28 V IDQ = 25 mA 0 10 20 30 50 70 40 60 Pin, INPUT POWER (mW) 80 90 Figure 5. Output Power versus Input Power MRF158 5.2-82 100 2.4 55 mW 2.0 30 mW 1.6 1.2 f = 500 MHz IDQ = 25 mA 0.8 0.4 0 12 14 16 18 20 22 24 26 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 28 Figure 6. Output Power versus Voltage MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA Table 1. Common Source S-Parameters (VDS = 13 V, ID = 100 mA) S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 5 1.000 -2 9.45 179 0.000 89 0.965 -1 10 0.997 -4 9.45 177 0.005 92 0.969 -3 15 0.999 -5 9.50 176 0.007 86 0.962 -5 20 0.997 -7 9.45 174 0.009 91 0.958 -6 25 0.997 -9 9.44 173 0.012 88 0.958 -7 30 0.996 -10 9.40 172 0.014 82 0.960 -8 35 0.994 -12 9.38 170 0.016 78 0.956 -10 40 0.993 -14 9.35 169 0.016 77 0.958 -11 45 0.990 -15 9.34 167 0.020 79 0.957 -12 50 0.988 -17 9.29 166 0.021 76 0.957 -14 55 0.985 -19 9.25 165 0.023 77 0.955 -15 60 0.983 -21 9.26 163 0.026 75 0.952 -17 65 0.980 -22 9.19 162 0.028 74 0.947 -18 70 0.977 -24 9.15 160 0.029 74 0.943 -20 75 0.973 -25 9.11 159 0.031 74 0.942 -21 80 0.970 -27 9.04 158 0.034 70 0.935 -22 85 0.967 -29 8.98 157 0.035 71 0.932 -24 90 0.963 -30 8.91 155 0.037 67 0.929 -25 95 0.961 -32 8.90 154 0.039 68 0.924 -26 100 0.957 -33 8.81 153 0.040 67 0.917 -27 105 0.953 -35 8.77 151 0.041 64 0.916 -28 109 0.950 -36 8.69 150 0.042 65 0.914 -30 114 0.943 -38 8.62 149 0.045 63 0.906 -31 119 0.940 -40 8.56 148 0.045 62 0.907 -32 124 0.933 -41 8.49 146 0.049 61 0.901 -33 129 0.933 -43 8.46 145 0.049 60 0.901 -35 134 0.923 -44 8.37 144 0.052 59 0.896 -36 139 0.921 -45 8.29 143 0.052 58 0.890 -37 144 0.917 -47 8.22 142 0.055 57 0.885 -39 149 0.913 -48 8.16 140 0.055 55 0.878 -40 154 0.911 -50 8.11 140 0.057 53 0.874 -41 159 0.905 -51 8.02 138 0.059 54 0.868 -42 164 0.902 -52 7.94 137 0.059 53 0.863 -43 169 0.896 -54 7.87 136 0.062 52 0.856 -44 174 0.893 -55 7.79 135 0.063 50 0.851 -45 179 0.890 -56 7.71 134 0.062 50 0.846 -46 184 0.882 -58 7.64 133 0.065 48 0.845 -47 189 0.881 -59 7.59 132 0.065 47 0.840 -48 194 0.874 -60 7.53 131 0.066 47 0.834 -49 199 0.868 -61 7.43 130 0.067 47 0.828 -50 204 0.864 -62 7.36 129 0.068 46 0.829 -51 209 0.861 -63 7.31 128 0.070 45 0.824 -52 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF158 5.2-83 AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA Table 1. Common Source S-Parameters (VDS = 13 V, ID = 100 mA) (continued) S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 214 0.856 -65 7.24 127 0.070 44 0.820 -53 219 0.853 -66 7.17 126 0.070 43 0.813 -54 224 0.848 -67 7.10 125 0.072 41 0.806 -55 229 0.847 -68 7.02 124 0.074 41 0.803 -56 234 0.841 -69 6.94 124 0.075 40 0.800 -57 239 0.839 -70 6.92 122 0.074 39 0.789 -58 244 0.832 -71 6.80 122 0.076 40 0.783 -59 249 0.828 -72 6.73 121 0.077 38 0.780 -60 254 0.825 -73 6.68 120 0.077 39 0.778 -60 259 0.820 -74 6.60 119 0.078 36 0.772 -61 264 0.816 -75 6.54 118 0.078 35 0.769 -62 269 0.813 -76 6.48 117 0.078 36 0.765 -63 274 0.810 -77 6.42 117 0.079 34 0.765 -64 279 0.806 -78 6.34 116 0.080 35 0.762 -64 284 0.799 -79 6.29 115 0.080 34 0.757 -65 289 0.800 -80 6.23 114 0.081 31 0.756 -66 294 0.795 -81 6.18 113 0.081 33 0.753 -67 299 0.789 -82 6.12 113 0.084 31 0.750 -67 304 0.791 -83 6.07 112 0.082 31 0.742 -68 308 0.790 -84 5.99 111 0.084 30 0.742 -69 313 0.787 -85 5.95 110 0.084 29 0.737 -70 318 0.784 -85 5.88 109 0.083 30 0.729 -70 323 0.779 -86 5.80 109 0.084 28 0.726 -71 328 0.778 -87 5.77 108 0.085 27 0.723 -72 333 0.773 -88 5.69 107 0.085 28 0.720 -72 338 0.771 -89 5.64 107 0.084 26 0.716 -73 343 0.766 -89 5.60 106 0.086 25 0.716 -74 348 0.766 -90 5.55 106 0.086 25 0.712 -74 353 0.763 -91 5.50 105 0.086 24 0.708 -75 358 0.761 -92 5.43 104 0.086 24 0.708 -75 363 0.761 -93 5.41 104 0.086 24 0.706 -76 368 0.755 -94 5.35 103 0.086 23 0.702 -77 373 0.753 -94 5.29 102 0.087 23 0.704 -77 378 0.752 -95 5.25 101 0.086 23 0.700 -78 383 0.750 -96 5.20 101 0.087 22 0.697 -79 388 0.747 -96 5.15 100 0.089 21 0.692 -79 393 0.742 -97 5.08 100 0.087 21 0.693 -80 398 0.741 -98 5.04 99 0.088 20 0.689 -81 403 0.743 -98 5.01 98 0.088 20 0.684 -81 408 0.740 -99 4.97 98 0.088 19 0.682 -81 413 0.734 -100 4.90 97 0.089 19 0.682 -82 418 0.738 -100 4.87 97 0.088 18 0.677 -83 MRF158 5.2-84 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA Table 1. Common Source S-Parameters (VDS = 13 V, ID = 100 mA) (continued) S11 f MHz |S11| 423 0.733 428 0.735 433 S21 S12 S22 |S21| |S12| |S22| -101 4.82 96 0.089 18 0.676 -83 -102 4.80 96 0.089 17 0.674 -84 0.731 -102 4.74 95 0.088 16 0.672 -84 438 0.732 -103 4.70 94 0.088 17 0.673 -85 443 0.728 -104 4.67 94 0.089 16 0.670 -85 448 0.729 -105 4.64 93 0.090 16 0.671 -86 453 0.727 -105 4.59 93 0.088 16 0.668 -86 458 0.723 -105 4.56 92 0.089 15 0.668 -87 463 0.721 -106 4.50 91 0.088 15 0.668 -87 468 0.720 -107 4.46 91 0.088 15 0.665 -87 473 0.719 -107 4.42 90 0.089 13 0.662 -88 478 0.717 -107 4.38 90 0.089 13 0.662 -89 483 0.717 -108 4.35 89 0.088 13 0.658 -89 488 0.715 -109 4.32 89 0.088 13 0.660 -89 493 0.714 -109 4.28 88 0.090 13 0.655 -90 498 0.714 -110 4.25 88 0.090 12 0.655 -91 503 0.713 -110 4.22 87 0.089 12 0.652 -91 507 0.712 -111 4.17 87 0.090 11 0.650 -91 512 0.711 -111 4.15 86 0.089 11 0.649 -92 517 0.706 -112 4.11 86 0.090 11 0.650 -92 522 0.705 -112 4.07 85 0.089 10 0.650 -93 527 0.706 -113 4.07 85 0.089 10 0.648 -93 532 0.705 -113 4.02 84 0.088 10 0.649 -93 537 0.704 -114 4.00 84 0.088 9 0.645 -94 542 0.704 -114 3.95 83 0.089 9 0.646 -94 547 0.704 -115 3.93 82 0.087 10 0.646 -95 552 0.704 -116 3.90 82 0.090 8 0.645 -95 557 0.702 -116 3.87 82 0.089 8 0.646 -96 562 0.699 -117 3.83 81 0.088 8 0.646 -96 567 0.699 -117 3.80 81 0.089 8 0.641 -96 572 0.700 -117 3.76 80 0.088 7 0.640 -97 577 0.699 -118 3.74 80 0.087 7 0.640 -97 582 0.698 -118 3.70 80 0.088 7 0.641 -98 587 0.699 -118 3.69 79 0.087 7 0.637 -98 592 0.697 -119 3.67 79 0.088 6 0.638 -98 597 0.698 -119 3.64 78 0.088 6 0.633 -99 602 0.698 -119 3.62 78 0.087 6 0.638 -99 607 0.695 -120 3.58 77 0.087 6 0.637 -99 612 0.696 -120 3.57 77 0.087 6 0.637 -100 617 0.694 -121 3.54 76 0.086 5 0.636 -100 622 0.695 -121 3.52 76 0.087 5 0.635 -100 627 0.692 -121 3.48 75 0.088 5 0.637 -101 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF158 5.2-85 AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA Table 1. Common Source S-Parameters (VDS = 13 V, ID = 100 mA) (continued) S11 f MHz |S11| 632 0.691 637 0.691 642 S21 S12 S22 |S21| |S12| -122 3.46 75 0.085 4 0.634 -101 -122 3.44 74 0.087 4 0.641 -102 0.689 -123 3.41 74 0.087 3 0.637 -102 647 0.687 -123 3.38 74 0.087 3 0.634 -103 652 0.689 -124 3.36 73 0.085 3 0.636 -103 657 0.686 -124 3.34 73 0.086 1 0.635 -103 662 0.688 -125 3.30 72 0.086 3 0.634 -104 667 0.689 -125 3.28 72 0.086 2 0.634 -104 672 0.693 -125 3.27 72 0.086 2 0.631 -104 677 0.687 -126 3.24 71 0.086 1 0.632 -104 682 0.689 -126 3.22 71 0.083 1 0.629 -105 687 0.687 -126 3.20 70 0.083 1 0.630 -105 692 0.686 -127 3.17 70 0.083 1 0.630 -105 697 0.690 -127 3.16 70 0.083 0 0.630 -106 702 0.687 -127 3.14 69 0.084 0 0.627 -106 706 0.688 -128 3.12 69 0.083 1 0.630 -106 711 0.685 -128 3.10 68 0.083 0 0.632 -107 716 0.686 -128 3.08 68 0.085 0 0.636 -107 721 0.688 -128 3.08 68 0.084 -1 0.634 -107 726 0.685 -129 3.05 67 0.083 0 0.634 -108 731 0.685 -130 3.02 67 0.083 -1 0.634 -108 736 0.684 -130 3.01 66 0.083 -1 0.635 -108 741 0.680 -130 2.98 66 0.082 -1 0.631 -109 746 0.681 -130 2.97 65 0.083 -2 0.636 -109 751 0.682 -131 2.96 65 0.082 -2 0.631 -110 756 0.683 -131 2.93 65 0.082 -2 0.632 -109 761 0.681 -132 2.90 64 0.082 -1 0.630 -110 766 0.683 -132 2.89 64 0.083 -3 0.632 -110 771 0.684 -132 2.87 64 0.082 -3 0.631 -110 776 0.682 -133 2.85 63 0.081 -4 0.628 -111 781 0.684 -133 2.85 63 0.080 -3 0.630 -111 786 0.686 -133 2.83 63 0.079 -4 0.629 -111 791 0.684 -134 2.81 62 0.080 -3 0.632 -112 796 0.685 -134 2.79 62 0.080 -4 0.631 -112 801 0.683 -134 2.77 62 0.079 -4 0.634 -112 806 0.685 -134 2.75 61 0.079 -2 0.632 -112 |S22| 811 0.683 -135 2.75 61 0.078 -4 0.635 -113 816 0.684 -135 2.73 60 0.079 -4 0.637 -113 821 0.683 -135 2.70 60 0.077 -3 0.633 -113 826 0.682 -135 2.69 60 0.078 -5 0.637 -114 831 0.682 -136 2.67 59 0.077 -4 0.635 -114 836 0.681 -136 2.66 59 0.077 -5 0.638 -114 MRF158 5.2-86 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA Table 1. Common Source S-Parameters (VDS = 13 V, ID = 100 mA) (continued) S11 f MHz |S11| 841 0.681 846 0.679 851 S21 S12 S22 |S21| |S12| |S22| -136 2.64 58 0.079 -4 0.635 -115 -137 2.63 58 0.078 -4 0.637 -115 0.678 -137 2.61 58 0.077 -5 0.634 -115 856 0.682 -137 2.59 57 0.077 -5 0.635 -115 861 0.680 -137 2.59 57 0.077 -4 0.634 -115 866 0.681 -138 2.57 57 0.077 -6 0.635 -116 871 0.682 -138 2.55 56 0.075 -6 0.633 -116 876 0.684 -139 2.54 56 0.075 -5 0.631 -116 881 0.683 -139 2.53 56 0.075 -5 0.635 -117 886 0.681 -139 2.52 55 0.074 -6 0.633 -117 891 0.685 -140 2.50 55 0.074 -6 0.633 -117 896 0.683 -140 2.49 55 0.075 -6 0.638 -117 901 0.680 -140 2.47 54 0.073 -5 0.640 -118 905 0.681 -140 2.46 54 0.074 -7 0.637 -118 910 0.684 -140 2.44 54 0.074 -8 0.639 -118 915 0.683 -141 2.43 53 0.073 -6 0.639 -119 920 0.686 -141 2.42 53 0.074 -6 0.643 -119 925 0.683 -141 2.40 53 0.073 -7 0.641 -119 930 0.684 -141 2.39 52 0.072 -7 0.640 -120 935 0.682 -142 2.38 52 0.073 -6 0.638 -120 940 0.685 -142 2.37 52 0.072 -6 0.639 -120 945 0.683 -142 2.36 51 0.072 -7 0.638 -120 950 0.683 -143 2.34 51 0.071 -7 0.639 -120 955 0.683 -143 2.33 51 0.070 -7 0.638 -120 960 0.683 -143 2.32 51 0.073 -8 0.640 -121 965 0.683 -143 2.31 50 0.070 -8 0.640 -121 970 0.684 -144 2.30 50 0.071 -7 0.643 -121 975 0.684 -144 2.28 50 0.069 -8 0.640 -121 980 0.682 -144 2.27 49 0.068 -6 0.641 -122 985 0.685 -144 2.26 49 0.069 -9 0.643 -122 990 0.684 -145 2.25 48 0.067 -8 0.644 -122 995 0.683 -145 2.24 48 0.069 -8 0.644 -123 1000 0.684 -145 2.23 48 0.068 -8 0.643 -123 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF158 5.2-87 AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA Table 2. Common Source S-Parameters (VDS = 28 V, ID = 100 mA) S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 5 1.002 -1 7.98 179 0.001 80 0.966 -1 10 0.999 -3 7.99 178 0.003 105 0.969 -2 15 0.999 -4 8.03 176 0.005 87 0.962 -3 20 0.998 -6 7.99 175 0.007 72 0.959 -4 25 0.999 -7 8.00 174 0.008 82 0.959 -5 30 0.997 -9 7.97 173 0.010 89 0.962 -6 35 0.999 -10 7.95 172 0.012 85 0.961 -7 40 0.996 -12 7.94 170 0.014 74 0.962 -8 45 0.994 -13 7.95 169 0.015 77 0.960 -9 50 0.991 -15 7.91 168 0.017 79 0.959 -10 55 0.990 -16 7.88 167 0.017 83 0.959 -11 60 0.988 -18 7.91 165 0.021 77 0.957 -12 65 0.989 -19 7.85 164 0.020 76 0.957 -13 70 0.983 -20 7.83 163 0.022 74 0.954 -15 75 0.981 -22 7.80 162 0.025 78 0.952 -16 80 0.980 -23 7.76 161 0.026 73 0.948 -17 85 0.979 -25 7.72 160 0.026 72 0.946 -18 90 0.977 -26 7.67 158 0.029 72 0.944 -19 95 0.973 -28 7.68 157 0.030 68 0.939 -19 100 0.970 -29 7.62 156 0.031 68 0.934 -20 105 0.970 -30 7.60 155 0.031 68 0.932 -21 109 0.967 -32 7.54 154 0.034 66 0.931 -22 114 0.961 -33 7.49 153 0.034 67 0.926 -23 119 0.960 -34 7.46 152 0.036 66 0.925 -24 124 0.956 -36 7.42 150 0.038 65 0.923 -25 129 0.954 -37 7.41 149 0.039 65 0.923 -26 134 0.948 -38 7.35 148 0.041 63 0.920 -27 139 0.946 -40 7.29 147 0.042 61 0.916 -28 144 0.944 -41 7.25 146 0.044 61 0.913 -29 149 0.939 -42 7.20 145 0.044 60 0.909 -30 154 0.939 -43 7.17 144 0.046 60 0.904 -31 159 0.935 -45 7.11 143 0.046 58 0.900 -32 164 0.932 -46 7.06 142 0.048 57 0.897 -33 169 0.928 -47 7.01 141 0.049 59 0.891 -34 174 0.927 -48 6.94 140 0.049 55 0.885 -34 179 0.922 -49 6.89 139 0.051 55 0.882 -35 184 0.918 -51 6.85 138 0.052 54 0.883 -36 189 0.915 -52 6.82 137 0.053 53 0.878 -36 194 0.912 -53 6.78 136 0.053 50 0.874 -37 199 0.904 -54 6.71 135 0.054 52 0.867 -38 204 0.902 -55 6.65 134 0.054 51 0.868 -39 209 0.902 -56 6.62 133 0.056 50 0.866 -39 MRF158 5.2-88 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA Table 2. Common Source S-Parameters (VDS = 28 V, ID = 100 mA) (continued) S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 214 0.898 -58 6.57 132 0.058 50 0.863 -40 219 0.896 -59 6.52 132 0.059 49 0.858 -41 224 0.888 -60 6.47 131 0.059 48 0.850 -42 229 0.887 -61 6.42 130 0.060 46 0.847 -43 234 0.885 -62 6.36 129 0.061 46 0.846 -44 239 0.882 -63 6.35 128 0.062 46 0.837 -45 244 0.876 -64 6.25 127 0.062 45 0.833 -45 249 0.872 -65 6.19 126 0.063 43 0.829 -46 254 0.869 -66 6.15 125 0.064 43 0.828 -47 259 0.867 -67 6.09 125 0.065 43 0.823 -47 264 0.863 -68 6.06 124 0.065 42 0.818 -48 269 0.860 -69 6.01 123 0.065 42 0.816 -48 274 0.856 -70 5.95 122 0.067 41 0.815 -49 279 0.854 -71 5.91 121 0.068 40 0.812 -50 284 0.848 -72 5.87 120 0.068 39 0.809 -50 289 0.849 -73 5.84 120 0.068 38 0.807 -51 294 0.845 -74 5.78 119 0.069 38 0.805 -52 299 0.840 -75 5.73 118 0.070 36 0.800 -53 304 0.839 -75 5.68 117 0.068 37 0.795 -53 308 0.840 -76 5.63 117 0.069 35 0.793 -54 313 0.835 -77 5.59 116 0.071 35 0.790 -55 318 0.832 -78 5.54 115 0.071 35 0.784 -55 323 0.829 -79 5.48 114 0.070 34 0.783 -56 328 0.829 -80 5.45 114 0.072 33 0.778 -56 333 0.825 -81 5.39 113 0.071 33 0.776 -57 338 0.821 -82 5.35 112 0.073 32 0.771 -58 343 0.818 -82 5.31 111 0.072 32 0.770 -58 348 0.816 -83 5.25 111 0.074 30 0.765 -59 353 0.814 -84 5.23 110 0.074 31 0.764 -59 358 0.810 -85 5.18 110 0.073 30 0.764 -59 363 0.810 -85 5.16 109 0.074 30 0.761 -60 368 0.807 -86 5.11 108 0.074 29 0.756 -61 373 0.805 -87 5.07 107 0.075 29 0.760 -61 378 0.801 -88 5.03 107 0.075 27 0.753 -62 383 0.799 -88 4.98 106 0.075 27 0.752 -62 388 0.796 -89 4.94 105 0.074 27 0.748 -63 393 0.796 -90 4.88 105 0.077 26 0.748 -63 398 0.790 -91 4.85 104 0.075 26 0.743 -64 403 0.794 -91 4.82 103 0.076 25 0.739 -64 408 0.789 -92 4.78 103 0.077 26 0.738 -65 413 0.785 -92 4.73 102 0.076 25 0.736 -66 418 0.788 -93 4.70 102 0.076 24 0.732 -66 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF158 5.2-89 AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA Table 2. Common Source S-Parameters (VDS = 28 V, ID = 100 mA) (continued) S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 423 0.783 -94 4.66 101 0.077 24 0.730 -66 428 0.784 -95 4.64 101 0.079 23 0.728 -67 433 0.779 -95 4.60 100 0.078 23 0.727 -67 438 0.779 -96 4.55 99 0.078 22 0.727 -68 443 0.775 -97 4.52 99 0.077 21 0.725 -68 448 0.778 -98 4.51 98 0.078 21 0.725 -69 453 0.776 -98 4.46 98 0.078 21 0.719 -69 458 0.771 -99 4.43 97 0.078 21 0.720 -70 463 0.771 -99 4.39 96 0.079 20 0.723 -70 468 0.769 -100 4.36 95 0.079 19 0.716 -71 473 0.767 -100 4.31 95 0.079 18 0.716 -71 478 0.765 -101 4.28 95 0.078 20 0.716 -72 483 0.764 -101 4.24 94 0.079 19 0.710 -72 488 0.763 -102 4.22 94 0.079 19 0.711 -72 493 0.762 -103 4.18 93 0.079 18 0.709 -73 498 0.760 -103 4.15 93 0.080 17 0.706 -73 503 0.760 -104 4.12 92 0.079 16 0.705 -74 507 0.758 -104 4.10 91 0.079 17 0.701 -74 512 0.758 -105 4.08 91 0.079 16 0.700 -74 517 0.751 -105 4.03 90 0.078 16 0.700 -75 522 0.750 -106 4.00 90 0.080 15 0.700 -75 527 0.753 -106 4.00 89 0.079 16 0.698 -76 532 0.750 -107 3.96 89 0.079 14 0.699 -76 537 0.749 -107 3.94 88 0.079 15 0.696 -76 542 0.748 -108 3.90 87 0.080 13 0.696 -77 547 0.749 -109 3.88 87 0.080 13 0.697 -77 552 0.750 -109 3.85 87 0.079 14 0.693 -78 557 0.747 -110 3.82 86 0.078 13 0.697 -78 562 0.743 -110 3.78 86 0.079 12 0.695 -79 567 0.744 -111 3.75 85 0.079 12 0.689 -79 572 0.742 -111 3.73 85 0.078 11 0.690 -79 577 0.743 -112 3.70 84 0.080 12 0.689 -80 582 0.743 -112 3.67 84 0.080 11 0.691 -80 587 0.742 -112 3.64 83 0.078 11 0.688 -80 592 0.740 -113 3.62 83 0.080 10 0.685 -81 597 0.741 -113 3.61 82 0.078 10 0.682 -81 602 0.739 -114 3.59 82 0.078 10 0.685 -82 607 0.736 -114 3.56 82 0.079 9 0.682 -82 612 0.737 -115 3.53 81 0.077 9 0.684 -82 617 0.735 -115 3.52 81 0.078 10 0.682 -82 622 0.736 -115 3.50 80 0.078 9 0.680 -83 627 0.732 -116 3.47 80 0.078 8 0.681 -83 MRF158 5.2-90 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA Table 2. Common Source S-Parameters (VDS = 28 V, ID = 100 mA) (continued) S11 f MHz |S11| 632 0.733 637 0.730 642 S21 S12 |S21| |S12| -117 3.45 79 0.077 -117 3.41 79 0.078 0.731 -117 3.40 78 647 0.728 -118 3.37 652 0.730 -118 657 0.725 662 0.725 667 S22 |S22| 8 0.682 -84 8 0.684 -84 0.077 8 0.683 -85 78 0.077 7 0.679 -85 3.35 77 0.077 8 0.679 -85 -119 3.32 77 0.077 7 0.679 -85 -119 3.29 76 0.079 6 0.679 -86 0.727 -120 3.27 76 0.078 5 0.677 -86 672 0.731 -120 3.26 75 0.077 6 0.676 -86 677 0.727 -120 3.24 75 0.077 5 0.675 -87 682 0.725 -121 3.21 75 0.077 4 0.673 -87 687 0.726 -121 3.19 74 0.078 6 0.672 -87 692 0.724 -121 3.17 74 0.076 6 0.672 -88 697 0.728 -122 3.17 74 0.075 6 0.672 -88 702 0.724 -122 3.13 73 0.075 5 0.672 -88 706 0.724 -122 3.12 73 0.077 5 0.670 -89 711 0.722 -123 3.10 72 0.077 5 0.674 -89 716 0.722 -123 3.09 72 0.076 4 0.676 -89 721 0.723 -124 3.08 71 0.075 2 0.674 -90 726 0.720 -124 3.05 71 0.075 4 0.672 -90 731 0.719 -124 3.03 70 0.075 4 0.676 -90 736 0.720 -125 3.02 70 0.076 3 0.675 -91 741 0.716 -125 2.99 70 0.075 2 0.672 -91 746 0.718 -126 2.98 69 0.075 3 0.677 -91 751 0.715 -126 2.97 69 0.075 3 0.670 -92 756 0.717 -126 2.94 68 0.075 3 0.673 -92 761 0.716 -127 2.92 68 0.075 2 0.668 -92 766 0.717 -127 2.90 67 0.075 2 0.673 -93 771 0.717 -128 2.88 67 0.073 2 0.669 -93 776 0.714 -128 2.86 67 0.076 1 0.668 -93 781 0.718 -128 2.86 66 0.074 1 0.668 -93 786 0.718 -129 2.85 66 0.073 1 0.670 -94 791 0.718 -129 2.82 66 0.073 1 0.670 -94 796 0.716 -129 2.81 65 0.072 0 0.668 -94 801 0.715 -130 2.79 65 0.073 -1 0.671 -95 806 0.718 -130 2.77 65 0.071 1 0.669 -95 811 0.714 -130 2.77 64 0.072 0 0.672 -95 816 0.714 -130 2.74 64 0.072 0 0.673 -96 821 0.714 -131 2.72 63 0.070 0 0.671 -96 826 0.715 -131 2.71 63 0.073 0 0.675 -96 831 0.713 -131 2.69 63 0.071 0 0.672 -96 836 0.713 -131 2.68 62 0.072 -1 0.672 -97 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF158 5.2-91 AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA Table 2. Common Source S-Parameters (VDS = 28 V, ID = 100 mA) (continued) S11 f MHz |S11| 841 0.712 846 0.710 851 S21 |S21| |S12| -132 2.67 62 0.069 -132 2.65 61 0.071 0.708 -132 2.63 61 0.071 856 0.712 -133 2.62 61 861 0.710 -133 2.61 866 0.710 -134 871 0.710 -134 876 0.713 881 S22 |S22| 0 0.671 -97 -1 0.672 -97 -1 0.670 -97 0.071 -2 0.669 -98 61 0.071 -2 0.669 -98 2.59 60 0.071 -2 0.669 -98 2.58 60 0.071 -2 0.669 -98 -134 2.57 59 0.069 -3 0.666 -99 0.711 -135 2.56 59 0.068 -3 0.667 -99 886 0.710 -135 2.54 59 0.069 -3 0.666 -99 891 0.711 -135 2.52 58 0.067 -3 0.668 -100 896 0.711 -136 2.52 58 0.070 -2 0.670 -100 901 0.709 -136 2.50 57 0.069 -5 0.669 -101 905 0.711 -136 2.49 57 0.069 -3 0.671 -101 910 0.711 -136 2.47 57 0.068 -4 0.674 -101 915 0.710 -137 2.46 56 0.068 -2 0.673 -101 920 0.712 -137 2.45 56 0.066 -4 0.673 -102 925 0.708 -137 2.42 56 0.067 -4 0.673 -102 930 0.709 -137 2.42 55 0.068 -3 0.673 -102 935 0.709 -138 2.41 55 0.066 -4 0.670 -102 940 0.709 -138 2.40 55 0.066 -2 0.672 -102 945 0.709 -138 2.39 54 0.065 -3 0.672 -103 950 0.708 -139 2.38 54 0.066 -4 0.671 -103 955 0.711 -139 2.36 54 0.065 -5 0.669 -103 960 0.709 -139 2.35 54 0.064 -4 0.672 -103 965 0.708 -140 2.34 53 0.064 -3 0.671 -104 970 0.707 -140 2.33 53 0.065 -5 0.673 -104 975 0.706 -140 2.32 52 0.065 -4 0.671 -104 980 0.707 -140 2.30 52 0.065 -4 0.669 -104 985 0.707 -140 2.29 51 0.064 -6 0.674 -105 990 0.708 -141 2.28 51 0.063 -4 0.674 -105 995 0.708 -141 2.28 51 0.063 -5 0.674 -105 1000 0.710 -141 2.26 50 0.063 -5 0.676 -106 MRF158 5.2-92 S12 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF160 N-Channel Enhancement-Mode MOSFET Designed primarily for wideband large-signal output and driver from 30-500 MHz. * Guaranteed 28 Volt, 500 MHz Performance Output Power = 4.0 Watts Gain = 16 dB (Min) Efficiency = 55% (Typ) To 500 MHz, 4 W, 28 V MOSFET BROADBAND RF POWER FET * Excellent Thermal Stability, Ideally Suited for Class A Operation * Facilitates Manual Gain Control, ALC and Modulation Techniques * 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR * Low Crss - 0.8 pF Typical at VDS = 28 Volts * S-Parameters Available for Download into Frequency Domain Simulators. See http://mot-sps.com/rf/designtds/ D CASE 249-06, STYLE 3 G S MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Symbol Value Unit Drain-Gate Voltage VDSS 65 Vdc Drain-Gate Voltage (RGS = 1.0 M) VDGR 65 Vdc Rating VGS 20 Vdc Drain Current-Continuous ID 1.0 ADC Total Device Dissipation @ TC = 25C Derate Above 25C PD 24 0.14 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C RJC 7.2 C/W Gate-Source Voltage Operating Junction Temperature THERMAL CHARACTERISTICS Thermal Resistance -- Junction to Case NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 5 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF160 5.2-93 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max 65 -- -- -- -- 0.5 -- -- 1.0 1.5 3.0 4.5 -- 3.8 -- 150 220 -- -- 6.0 -- -- 6.5 -- -- 0.8 -- 16 18 -- 50 55 -- Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VDS = 0 Vdc, VGS = 0 Vdc, ID = 1.0 mA) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 V) IDSS Gate-Source Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) IGSS Vdc mA A ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 10 mA) VGS(th) Drain Source On-Voltage (VDS (on), VGS = 10 Vdc, ID = 500 mA) VDS(on) Forward Transconductance (VDS = 10 Vdc, ID = 250 mA) Vdc Vdc gfs mS DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 28 Vdc, VGS = 0 V, f = 1.0 MHz) Ciss Output Capacitance (VDS = 28 V, VGS = 0 Vdc, f = 1.0 MHz) Coss Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Crss pF pF pF FUNCTIONAL CHARACTERISTICS Common Source Power Gain (VDD = 28 Vdc, Pout = 4.0 W, f = 500 MHz, IDQ = 50 mA) Gps Drain Efficiency (VDD = 28 Vdc, Pout = 4.0 W, f = 500 MHz, IDQ = 50 mA) Electrical Ruggedness (VDD = 28 Vdc, Pout = 4.0 W, f = 500 MHz, IDQ = 50 mA) Load VSWR = 30:1 at All Phase Angles at Frequency of Test % No Degradation in Output Power Series Equivalent Input Impedance (VDD = 28 Vdc, Pout = 4.0 W, f = 500 MHz, IDQ = 50 mA) Zin Series Equivalent Output Impedance (VDD = 28 Vdc, Pout = 4.0 W, f = 500 MHz, IDQ = 50 mA) Zout MRF160 5.2-94 dB Ohms -- 6.8 - j21 -- -- 21 - j28 -- Ohms MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA R3 C10 RFC1 C11 Bias Supply VDD 28 V + C8 C7 R2 C9 - + VDC C12 RFC2 R1 RF Output RF Input C6 C1 DUT C2 C3 C1, C6 C2 C4, C5 C3 C7, C9 C8 C10, C11 C12 C5 C4 240 pF, 100 mil Chip Capacitors 15 pF, 100 mil ATC Chip Capacitor 1 - 10 pF, Johanson Trimmer Capacitors 24 pF, 100 mil ATC Chip Capacitor 0.1 mF, 100 mil Chip Capacitors 220 pF, 100 mil ATC Chip Capacitor 680 pF, Feed Through Capacitors 50 mF, 50 V Electrolytic Capacitor R1 R2 R3 RFC1 RFC2 200 , 1/2 Watt 10 k, 1/2 Watt 1 k, 1/2 Watt Ferroxcube VK200-19/4B 8 Turns, #20 AWG, Enameled, ID 110 mils Board Material -- 0.062, Teflon Fiberglass, 1 oz., Copper clad both sides, r = 2.55 C5 900 mils Input Line 160 mils X 5315 mils Output Line 160 mils X 4345 mils C2 1300 mils NOTE: Due to variation in Chip Capacitor values and board material, these are approximate positions. C3 & C4 300 mils Figure 1. MRF160 500 MHz Test Circuit MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF160 5.2-95 Figure 2. MRF160 Broadband Test Fixture MRF160 5.2-96 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA TYPICAL CHARACTERISTICS f = 500 MHz IDQ = 50 mA 6 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 7 5 4 3 2 f = 500 MHz IDQ = 50 mA 6 Pin = 150 mW 75 mW 4 50 mW 25 mW 2 1 0 0 0 40 80 120 Pin, INPUT POWER (mW) 160 200 12 Figure 3. Output Power versus Input Power 28 Figure 4. Output Power versus Voltage 4.0 32 3.6 3.2 2.8 2.4 f = 1.0 MHz VGS = 0 V 28 f = 500 MHz VDS = 28 V IDQ = 50 mA Pin = Constant C, CAPACITANCE (pF) Pout , OUTPUT POWER (WATTS) 16 20 24 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 2.0 1.6 1.2 24 20 16 12 Coss Ciss 8 0.8 4 0.4 0 0 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (VOLTS) 3 Figure 5. Output Power versus Gate Voltage 3.5 0 Crss 0 4 8 12 16 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 24 28 Figure 6. Capacitance versus Drain-Source Voltage I D, DRAIN CURRENT (AMPS) 10 1 0.1 0 0 1 10 VDS, DRAIN VOLTAGE (VOLTS) 100 Figure 7. DC Safe Operating Area MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF160 5.2-97 AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA Table 1. Common Source S-Parameters (VDS = 12.5 V, ID = 120 mA) S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 30 0.991 -19 15.80 166 0.019 77 0.938 -19 40 0.970 -25 15.50 161 0.025 72 0.933 -25 50 0.959 -31 15.20 156 0.030 67 0.918 -31 60 0.943 -37 14.80 151 0.035 63 0.900 -37 70 0.925 -42 14.30 147 0.040 59 0.880 -42 80 0.912 -48 13.90 143 0.044 56 0.863 -47 85 0.903 -51 13.70 141 0.046 54 0.857 -49 90 0.896 -53 13.50 139 0.048 52 0.851 -52 100 0.872 -58 12.90 135 0.051 48 0.830 -57 110 0.853 -63 12.40 131 0.054 46 0.812 -60 120 0.841 -67 11.90 128 0.056 43 0.796 -63 130 0.831 -71 11.50 126 0.059 40 0.788 -67 140 0.814 -75 11.10 122 0.061 37 0.777 -70 150 0.797 -79 10.70 119 0.063 34 0.760 -74 160 0.782 -82 10.20 117 0.064 32 0.739 -78 170 0.776 -85 9.81 115 0.066 32 0.740 -79 180 0.769 -89 9.55 112 0.068 28 0.737 -83 190 0.754 -92 9.24 109 0.069 25 0.725 -87 200 0.737 -94 8.83 107 0.068 23 0.707 -90 210 0.731 -96 8.47 105 0.068 22 0.692 -92 220 0.730 -99 8.20 103 0.069 21 0.692 -94 230 0.724 -101 7.94 101 0.071 20 0.697 -95 240 0.713 -104 7.69 99 0.072 16 0.696 -99 250 0.705 -106 7.44 97 0.070 15 0.676 -100 260 0.699 -108 7.18 96 0.070 15 0.673 -102 270 0.697 -109 6.91 94 0.070 14 0.661 -103 280 0.697 -111 6.70 93 0.071 13 0.654 -104 290 0.693 -113 6.54 92 0.071 11 0.658 -106 300 0.686 -115 6.36 90 0.072 9 0.664 -108 310 0.679 -116 6.12 88 0.069 7 0.639 -111 320 0.679 -117 5.96 87 0.070 9 0.642 -110 330 0.679 -119 5.80 86 0.070 8 0.648 -112 340 0.679 -121 5.63 84 0.071 7 0.648 -114 350 0.674 -122 5.47 83 0.070 5 0.645 -114 360 0.669 -123 5.33 82 0.070 4 0.650 -116 370 0.667 -124 5.18 80 0.068 3 0.644 -118 380 0.672 -125 5.02 80 0.066 3 0.614 -119 390 0.675 -127 4.96 78 0.071 4 0.655 -116 400 0.672 -129 4.83 77 0.070 2 0.655 -119 410 0.668 -130 4.70 75 0.069 0 0.654 -121 420 0.666 -131 4.56 74 0.067 -1 0.644 -122 430 0.667 -131 4.48 74 0.066 -1 0.646 -122 MRF160 5.2-98 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA Table 1. Common Source S-Parameters (VDS = 12.5 V, ID = 120 mA) (continued) S11 f MHz |S11| 440 0.671 450 0.670 460 S21 S12 S22 |S21| |S12| |S22| -132 4.39 72 0.066 -1 0.651 -123 -134 4.29 71 0.068 -1 0.663 -123 0.662 -135 4.15 70 0.067 -6 0.677 -127 470 0.663 -135 4.05 69 0.065 -5 0.664 -127 480 0.666 -136 3.95 68 0.064 -5 0.663 -128 490 0.670 -137 3.88 67 0.064 -5 0.663 -128 500 0.670 -138 3.81 66 0.063 -6 0.670 -128 600 0.693 -147 3.06 55 0.053 -17 0.689 -136 700 0.708 -152 2.61 46 0.044 -14 0.723 -142 800 0.731 -158 2.22 40 0.037 -15 0.733 -146 900 0.724 -165 1.93 32 0.037 -32 0.760 -151 1000 0.748 -169 1.73 28 0.027 -6 0.778 -153 Table 2. Common Source S-Parameters (VDS = 28 V, ID = 250 mA) S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 30 0.995 -18 15.00 167 0.014 78 0.919 -15 40 0.978 -24 14.70 162 0.018 73 0.913 -19 50 0.971 -30 14.50 158 0.022 69 0.900 -23 60 0.961 -36 14.20 153 0.026 65 0.885 -28 70 0.947 -41 13.80 149 0.029 62 0.867 -32 80 0.938 -46 13.40 145 0.033 58 0.851 -35 85 0.932 -49 13.30 143 0.034 56 0.845 -37 90 0.927 -51 13.10 141 0.036 55 0.839 -39 100 0.908 -56 12.70 138 0.038 51 0.825 -43 110 0.893 -61 12.20 134 0.040 49 0.802 -46 120 0.884 -65 11.80 131 0.043 46 0.788 -48 130 0.875 -69 11.40 128 0.045 44 0.781 -51 140 0.862 -74 11.10 125 0.047 40 0.772 -54 150 0.848 -78 10.70 122 0.048 37 0.754 -57 160 0.836 -81 10.30 119 0.049 35 0.733 -60 170 0.830 -84 9.86 117 0.050 35 0.718 -60 180 0.824 -88 9.64 115 0.053 31 0.729 -64 190 0.813 -91 9.38 112 0.053 29 0.719 -67 200 0.798 -94 9.00 109 0.053 26 0.701 -70 210 0.792 -96 8.63 107 0.053 25 0.682 -72 220 0.790 -98 8.36 105 0.054 24 0.677 -73 230 0.785 -101 8.10 104 0.055 22 0.677 -75 240 0.777 -104 7.92 101 0.057 19 0.694 -78 250 0.769 -106 7.65 99 0.055 18 0.663 -80 260 0.764 -108 7.40 97 0.055 18 0.662 -81 270 0.761 -109 7.13 96 0.055 17 0.649 -82 280 0.760 -111 6.91 95 0.055 16 0.640 -82 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF160 5.2-99 AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA Table 2. Common Source S-Parameters (VDS = 28 V, ID = 250 mA) (continued) S11 f MHz |S11| 290 0.757 300 0.751 310 S21 S22 |S21| |S12| |S22| -113 6.75 93 0.055 14 0.641 -84 -115 6.59 91 0.056 12 0.645 -86 0.743 -117 6.37 89 0.055 9 0.635 -90 320 0.744 -118 6.17 88 0.054 11 0.619 -89 330 0.744 -120 6.01 87 0.055 11 0.628 -90 340 0.743 -121 5.85 85 0.055 10 0.629 -92 350 0.738 -123 5.70 84 0.055 8 0.629 -92 360 0.733 -124 5.55 82 0.054 6 0.631 -94 370 0.730 -126 5.40 81 0.054 4 0.623 -96 380 0.732 -127 5.21 80 0.052 4 0.593 -98 390 0.737 -129 5.17 79 0.055 7 0.627 -93 400 0.734 -130 5.04 77 0.055 4 0.639 -97 410 0.731 -131 4.92 76 0.054 3 0.641 -99 420 0.728 -132 4.78 75 0.052 1 0.630 -100 430 0.729 -133 4.67 74 0.051 0 0.628 -101 440 0.731 -134 4.57 72 0.051 1 0.626 -102 450 0.731 -136 4.47 71 0.053 1 0.630 -102 460 0.723 -137 4.37 69 0.054 -4 0.673 -106 470 0.724 -137 4.24 68 0.050 -3 0.647 -107 480 0.727 -138 4.13 68 0.049 -3 0.642 -108 490 0.730 -139 4.05 67 0.048 -3 0.641 -107 500 0.730 -140 3.99 66 0.048 -4 0.647 -108 600 0.736 -150 3.54 56 0.037 -14 0.657 -118 700 0.745 -156 2.99 46 0.029 -9 0.699 -126 800 0.765 -161 2.54 39 0.025 -5 0.713 -131 900 0.759 -168 2.20 31 0.022 -34 0.742 -136 1000 0.769 -173 1.98 27 0.018 19 0.756 -139 MRF160 5.2-100 S12 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF166C N-Channel Enhancement Mode MOSFETs Designed primarily for wideband large-signal output and driver from 30 - 500 MHz. * MRF166C -- Guaranteed Performance at 500 MHz, 28 Vdc Output Power = 20 W Gain = 13.5 dB Efficiency = 50% 20 W, 500 MHz MOSFET BROADBAND RF POWER FETs * Replacement for Industry Standards such as MRF136, DV2820, BLF244, SD1902, and ST1001 * 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR * Facilitates Manual Gain Control, ALC and Modulation Techniques * Excellent Thermal Stability, Ideally Suited for Class A Operation * Low Crss -- 4.0 pF @ VDS = 28 V * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. * S-Parameters Available for Download into Frequency Domain Simulators. See http://mot-sps.com/rf/designtds/ D CASE 319-07, STYLE 3 G S MAXIMUM RATINGS Rating Symbol Value Unit Drain-Gate Voltage VDSS 65 Vdc Drain-Gate Voltage (RGS = 1.0 M) VDGR 65 Vdc VGS 20 Adc Drain Current -- Continuous ID 4.0 Adc Total Device Dissipation @ TC = 25C Derate Above 25C PD 70 0.4 Watts W/C Storage Temperature Range Tstg - 65 to 150 C TJ 200 C Symbol Max Unit RJC 2.5 C/W Gate-Source Voltage Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 10 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF166C 5.2-101 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 -- -- V Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0 V) IDSS -- -- 0.5 mA Gate-Source Leakage Current (VGS = 20 V, VDS = 0 V) IGSS -- -- 1.0 A Gate Threshold Voltage (VDS = 10 V, ID = 25 mA) VGS(th) 1.5 3.0 4.5 V Forward Transconductance (VDS = 10 V, ID = 1.5 A) gfs 0.8 1.1 -- mhos Input Capacitance (VDS = 28 V, VGS = 0 V, f = 1.0 MHz) Ciss -- 28 -- pF Output Capacitance (VDS = 28 V, VGS = 0 V, f = 1.0 MHz) Coss -- 30 -- pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0 V, f = 1.0 MHz) Crss -- 4.0 -- pF Common Source Power Gain (VDD = 28 V, Pout = 20 W, f = 500 MHz, IDQ = 25 mA) Gps 13.5 16 -- dB Drain Efficiency (VDD = 28 V, Pout = 20 W, f = 500 MHz, IDQ = 25 mA) 50 55 -- % OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 V, ID = 5.0 mA) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL CHARACTERISTICS Electrical Ruggedness (VDD = 28 V, Pout = 20 W, f = 500 MHz, IDQ = 25 mA, Load VSWR 30:1 at All Phase Angles) MRF166C 5.2-102 No Degradation in Output Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA RFC1 C9 C10 R3 BIAS + C8 R2 VDD = 28 V - C4 + Vdc C11 - RFC2 R1 Z1 RF INPUT Z2 RF OUTPUT Z4 C7 Z3 C2 C5 C1 DUT C3 C1, C7 C2, C6 C3 C4, C8 C5 C9, C10 C11 R1 R2 R3 RFC1 RFC2 Board Material C6 Z1 200 pF, Chip Capacitor 2-10 pF, Trimmer Capacitor, Johansen 27 pF, ATC 100 mil Chip Capacitor 0.1 F, Chip Capacitor 15 pF, ATC 100 mil Chip Capacitor 680 pF, Feedthru Capacitor 50 F, 50 V, Electrolytic Capacitor 120 , 1/2 W Resistor 10 k, 1/2 W Resistor 1 k, 1/2 W Resistor Ferroxcube VK200 19/4B 10 Turns AWG #18, 0.125 I.D., Enameled 0.062 Teflon Fiberglass 1 oz. Copper Clad Both Sides r = 2.56 0.120 x 3.3, Microstrip Line 350 mils C2 600 mils C3 Z2 0.120 x 2.1, Microstrip Line C5 C6 825 mils 1650 mils Z3, Z4 0.120 x 0.25, Microstrip Line Figure 1. MRF166C 500 MHz Test Circuit TYPICAL CHARACTERISTICS 10 50 Coss 20 Ciss I D, DRAIN CURRENT (AMPS) C, CAPACITANCE (pF) 100 10 Crss 5 VGS = 0 V f = 1 MHz 2 1 0 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 25 TC = 25C 1 0.1 0 Figure 2. Capacitance versus Drain-Source Voltage MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 10 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 100 Figure 3. DC Safe Operating Area MRF166C 5.2-103 TYPICAL CHARACTERISTICS 32 12 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 28 275 MHz 24 400 MHz 20 f = 500 MHz 16 12 8 VDD = 28 V IDQ = 25 mA 4 0 0 10 8 f = 500 MHz 6 4 2 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 Pin, INPUT POWER (WATTS) 400 MHz VDD = 13.5 V IDQ = 25 mA 0 Figure 4. Output Power versus Input Power 0.15 0.2 0.25 0.3 0.35 Pin, INPUT POWER (WATTS) 0.4 0.45 0.5 Pout , OUTPUT POWER (WATTS) 35 f = 500 MHz IDQ = 25 mA 35 Pout , OUTPUT POWER (WATTS) 0.1 Figure 5. Output Power versus Input Power 40 Pin = 1 W 30 25 0.5 W 20 15 0.18 W 10 5 0 0.05 12 14 16 18 20 22 24 Pin, INPUT POWER (WATTS) 28 26 Figure 6. Output Power versus Supply Voltage MRF166C 5.2-104 f = 400 MHz IDQ = 25 mA 30 Pin = 0.5 W 25 0.3 W 20 0.15 W 15 10 5 0 12 14 16 18 20 22 24 Pin, INPUT POWER (WATTS) 26 28 Figure 7. Output Power versus Supply Voltage MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA VDD = 28 V, IDQ = 25 mA, Pout = 20 Watts Zo = 10 f MHz 500 MHz 500 MHz ZOL* f = 290 MHz 400 MHz 400 MHz Zin Ohms ZOL* Ohms 500 2.09 - j2.77 4.87 - j2.63 400 0.93 - j3.80 3.09 - j5.24 290 2.63 - j7.58 7.35 - j8.67 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency. f = 290 MHz Zin Figure 8. Series Equivalent Input and Output Impedance Figure 9. MRF166C Test Fixture MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF166C 5.2-105 AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA Table 1. Common Source S-Parameters (VDS = 12.5 V, ID = 1.25 A) S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 30 0.840 -142 22.59 105 0.025 20 0.727 -155 40 0.836 -151 17.4 100 0.025 17 0.743 -161 50 0.832 -156 14.1 97 0.026 15 0.751 -164 60 0.829 -159 12.0 94 0.026 14 0.764 -166 70 0.826 -162 10.4 91 0.026 14 0.763 -168 80 0.822 -164 9.09 90 0.026 14 0.763 -169 90 0.818 -165 8.07 89 0.027 14 0.765 -170 100 0.819 -167 7.28 87 0.027 14 0.774 -171 110 0.821 -168 6.61 85 0.027 14 0.773 -172 120 0.821 -169 6.00 83 0.026 15 0.771 -172 130 0.820 -169 5.56 83 0.027 16 0.778 -172 140 0.818 -170 5.22 82 0.027 17 0.785 -172 150 0.820 -170 4.86 80 0.027 17 0.786 -173 160 0.821 -171 4.52 79 0.027 17 0.781 -173 170 0.820 -171 4.23 79 0.027 20 0.774 -172 180 0.820 -171 4.03 78 0.027 20 0.799 -173 190 0.820 -172 3.86 76 0.027 20 0.799 -174 200 0.821 -172 3.62 75 0.027 20 0.784 -175 210 0.822 -173 3.39 75 0.027 22 0.780 -174 220 0.823 -173 3.25 74 0.027 24 0.795 -173 230 0.825 -173 3.12 72 0.028 23 0.823 -175 240 0.827 -173 2.96 71 0.026 24 0.791 -175 250 0.827 -174 2.83 70 0.027 26 0.789 -174 260 0.827 -174 2.71 70 0.026 27 0.791 -174 270 0.829 -174 2.62 69 0.027 28 0.801 -174 280 0.831 -174 2.52 68 0.027 29 0.807 -175 290 0.832 -174 2.42 66 0.027 30 0.788 -175 300 0.832 -174 2.32 66 0.027 32 0.792 -175 310 0.831 -174 2.25 66 0.027 33 0.797 -174 320 0.833 -175 2.18 65 0.027 34 0.810 -174 330 0.836 -175 2.10 63 0.028 35 0.812 -175 340 0.837 -175 2.00 62 0.027 35 0.789 -176 350 0.838 -175 1.95 62 0.028 39 0.806 -173 360 0.839 -175 1.90 61 0.028 39 0.817 -174 370 0.840 -176 1.84 60 0.028 40 0.817 -175 380 0.843 -176 1.77 59 0.028 41 0.811 -175 390 0.845 -176 1.71 59 0.028 42 0.805 -175 400 0.846 -176 1.66 58 0.029 46 0.801 -172 410 0.846 -176 1.64 57 0.030 46 0.845 -174 420 0.847 -176 1.59 56 0.030 46 0.836 -176 430 0.848 -176 1.52 56 0.030 47 0.823 -176 440 0.850 -176 1.48 56 0.030 49 0.816 -174 MRF166C 5.2-106 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA Table 1. Common Source S-Parameters (VDS = 12.5 V, ID = 1.25 A) (continued) S11 f MHz |S11| 450 0.851 460 0.853 470 S21 S12 S22 |S21| |S12| |S22| -176 1.47 54 0.032 51 0.851 -174 -177 1.42 53 0.032 48 0.849 -178 0.853 -177 1.37 53 0.031 51 0.830 -176 480 0.856 -177 1.34 53 0.032 53 0.834 -176 490 0.857 -177 1.32 52 0.033 54 0.841 -175 500 0.859 -177 1.28 51 0.034 54 0.847 -175 600 0.857 178 0.988 41 0.032 73 0.877 180 700 0.884 176 0.789 34 0.047 65 0.881 179 800 0.881 173 0.684 30 0.031 83 0.890 174 900 0.890 172 0.580 26 0.069 71 0.885 176 1000 0.897 170 0.503 24 0.090 60 0.931 173 Table 2. Common Source S-Parameters (VDS = 28 V, ID = 1.25 A) S11 S21 f MHz |S11| 30 0.842 -125 40 0.831 -136 50 0.822 60 S12 S22 |S12| |S22| 29.6 113 0.024 28 0.586 -136 23.2 106 0.025 22 0.607 -145 -143 19.0 101 0.026 19 0.613 -151 0.816 -148 16.2 98 0.026 17 0.626 -155 70 0.812 -152 14.1 95 0.027 16 0.635 -157 80 0.806 -155 12.4 92 0.026 15 0.643 -159 |S21| 90 0.801 -157 11.1 90 0.027 14 0.650 -160 100 0.802 -159 9.97 88 0.027 13 0.656 -161 110 0.805 -161 9.04 86 0.027 13 0.654 -163 120 0.805 -162 8.22 84 0.026 13 0.654 -163 130 0.803 -163 7.59 83 0.026 14 0.663 -163 140 0.801 -164 7.09 82 0.026 14 0.673 -164 150 0.803 -165 6.61 80 0.026 14 0.675 -164 160 0.804 -165 6.16 79 0.026 14 0.674 -164 170 0.803 -166 5.77 78 0.026 16 0.672 -164 180 0.804 -166 5.49 77 0.026 17 0.697 -164 190 0.806 -166 5.25 75 0.026 16 0.700 -165 200 0.806 -167 4.92 73 0.025 16 0.688 -166 210 0.807 -168 4.60 73 0.025 17 0.680 -165 220 0.809 -168 4.40 72 0.025 19 0.689 -165 230 0.812 -168 4.21 70 0.025 19 0.713 -167 240 0.814 -169 3.99 69 0.024 20 0.701 -167 250 0.815 -169 3.83 68 0.024 21 0.707 -166 260 0.816 -169 3.66 67 0.024 22 0.711 -166 270 0.818 -169 3.52 66 0.024 23 0.715 -166 280 0.821 -169 3.39 65 0.025 24 0.718 -167 290 0.822 -170 3.25 63 0.024 26 0.708 -168 300 0.823 -170 3.11 62 0.023 28 0.715 -167 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF166C 5.2-107 AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA Table 2. Common Source S-Parameters (VDS = 28 V, ID = 1.25 A) (continued) S11 f MHz |S11| 310 0.822 320 0.825 330 S21 S22 |S21| |S12| |S22| -170 2.99 62 0.023 29 0.725 -166 -170 2.89 61 0.024 31 0.734 -166 0.828 -171 2.78 60 0.024 33 0.736 -167 340 0.830 -171 2.66 59 0.024 33 0.724 -168 350 0.832 -171 2.59 58 0.024 37 0.739 -166 360 0.834 -171 2.52 57 0.024 39 0.757 -166 370 0.836 -171 2.44 56 0.023 39 0.755 -167 380 0.839 -172 2.34 55 0.023 38 0.745 -167 390 0.840 -172 2.26 54 0.024 40 0.738 -168 400 0.841 -172 2.19 54 0.024 46 0.735 -166 410 0.842 -172 2.14 53 0.025 46 0.787 -167 420 0.844 -172 2.09 51 0.026 46 0.790 -168 430 0.845 -173 1.99 51 0.027 49 0.777 -168 440 0.846 -173 1.93 51 0.026 52 0.770 -167 450 0.849 -173 1.91 49 0.027 53 0.794 -167 460 0.853 -173 1.84 48 0.027 51 0.803 -171 470 0.855 -173 1.77 47 0.027 54 0.787 -170 480 0.857 -174 1.72 47 0.027 57 0.789 -169 490 0.857 -174 1.68 47 0.027 56 0.796 -168 500 0.859 -174 1.64 46 0.029 57 0.802 -169 600 0.862 -179 1.18 33 0.036 77 0.851 -173 700 0.893 178 0.921 26 0.043 75 0.856 -175 800 0.890 175 0.771 22 0.043 78 0.880 -178 900 0.895 173 0.635 17 0.065 74 0.882 -178 1000 0.905 171 0.544 14 0.086 69 0.931 178 MRF166C 5.2-108 S12 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor MRF166W N-Channel Enhancement-Mode MOSFET Designed primarily for wideband large-signal output and driver stages to 30 - 500 MHz. * Push-Pull Configuration Reduces Even Numbered Harmonics * Guaranteed Performance at 500 MHz, 28 Vdc Output Power = 40 Watts Gain = 14 dB Efficiency = 50% 40 W, 500 MHz TMOS BROADBAND RF POWER FET * Typical Performance at 175 MHz, 28 Vdc Output Power = 40 Watts Gain = 17 dB Efficiency = 60% * Excellent Thermal Stability, Ideally Suited for Class A Operation * Facilitates Manual Gain Control, ALC and Modulation Techniques * 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR * Low Crss -- 4.0 pF @ VDS = 28 Volts * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. * S-Parameters Available for Download into Frequency Domain Simulators. See http://motorola.com/sps/rf/designtds/ CASE 412-01, Style 1 1 3 5 FLANGE 4 2 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Symbol Value Unit Drain-Gate Voltage VDSS 65 Vdc Drain-Gate Voltage (RGS = 1.0 M) VDGR 65 Vdc VGS 20 Adc Drain Current -- Continuous ID 8.0 ADC Total Device Dissipation @ TC = 25C Derate above 25C PD 175 1.0 Watts C/W Storage Temperature Range Tstg - 65 to +150 C TJ 200 C RJC 1.0 C/W Rating Gate-Source Voltage Operating Junction Temperature THERMAL CHARACTERISTICS Thermal Resistance -- Junction to Case NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF166W 5.2-109 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max 65 -- -- -- -- 0.5 -- -- 1.0 1.5 3.0 4.5 0.9 1.1 -- -- 28 -- -- 30 -- -- 4.0 -- 14 16 -- 50 55 -- Unit OFF CHARACTERISTICS (1) Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 5.0 mA) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS Gate-Source Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) IGSS Vdc mA A ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS= 10 Vdc, ID = 25 mA) VGS(th) Forward Transconductance (VDS= 10 Vdc, ID = 1.5 A) gfs Vdc mS DYNAMIC CHARACTERISTICS (1) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Output Capacitance (VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Coss Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Crss pF pF pF FUNCTIONAL CHARACTERISTICS (2) Common Source Power Gain (VDD = 28 Vdc, Pout = 40 W, f = 500 MHz, IDQ = 100 mA) Gps Drain Efficiency (VDD = 28 Vdc, Pout = 40 W, f = 500 MHz, IDQ = 100 mA) Electrical Ruggedness (VDD = 28 Vdc, Pout = 40 W, f = 500 MHz, IDQ = 100 mA) Load VSWR = 30:1, All phase angles at frequency of test Series Equivalent Input Impedance (VDD = 28 Vdc, Pout = 40 W, f = 500 MHz, IDQ = 100 mA) Zin Series Equivalent Output Impedance (VDD = 28 Vdc, Pout = 40 W, f = 500 MHz, IDQ = 100 mA) Zout dB % No Degradation in Output Power Ohms -- 2.88 -j7.96 -- -- 6.12 -j9.43 -- Ohms (1) Each transistor chip measured separately. (2) Both transistor chips operating in a push-pull amplifier. MRF166W 5.2-110 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA BIAS SUPPLY R1 C12 R2 C11 + C13 - VDD = 28 Vdc C14 R3 L1 RF INPUT B2 B1 C7 C2 D.U.T. C3 C5 C4 RF OUTPUT C6 C8 C1 R4 L2 C9 Inputs Line 70 mils x 2460 mils C10 Output Lines 70 mils x 2380 mils C4 C3 490 mils C5 680 mils C6 C1, C2, C7, C8 220 pF, 100 mil Chip Capacitor, ATC C3, C6 0 - 10 pF, Johanson C4 27 pF, 100 mil Chip Capacitor, ATC C5 22 pF, 100 mil Chip Capacitor, ATC C9, C10, C11, C12 0.01 F Blue Capacitor C13 470 pF, 100 mil Chip Capacitor, ATC C14 50 mF, 50 V Electrolytic Capacitor L1, L2 8 Turns #20 AWG, 0.100 mils ID B1, B2 6 long, ID = 550 mils, 50 Semi-Rigid Coax R1 1.0 k 1/2 Watt R2 10 k 1/2 Watt R3, R4 45 1/2 Watt Board Material - Teflon Fiberglass Dielectric Thickness = 0.30, r = 2.55 Copper Clad, 2.0 oz. Copper W W W W Figure 1. MRF166W 500 MHz Test Circuit Schematic MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF166W 5.2-111 24 f = 500 MHz Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 60 55 50 45 40 35 30 25 20 15 10 5 0 VDD = 28 Vdc IDQ = 100 mA 0.5 0 2.5 1 1.5 2 Pin, INPUT POWER (WATTS) 16 12 8 Figure 2. Output Power versus Input Power, 28 Vdc 0.4 0.8 1.2 1.6 2 Pin, INPUT POWER (WATTS) 2.4 2.8 45 52 48 44 40 40 IDQ = 100 mA f = 500 MHz Pin = 2 W Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 0 Figure 3. Output Power versus Input Power, 13.5 Vdc 56 Pin = 1 W 36 32 28 Pin = 0.5 W 24 20 16 12 8 VDD = 13.5 Vdc IDQ = 100 mA 4 0 3 f = 500 MHz 20 35 VDD = 28 Vdc IDQ = 100 mA 30 25 f = 500 MHz 20 15 TYPICAL DEVICE SHOWN VGS(th) = 3.0 V 10 5 12 14 16 18 20 22 24 VDD, SUPPLY VOLTAGE (VOLTS) 26 28 0 -5 -4 -3 -2 -1 0 1 2 3 VDS, GATE-SOURCE VOLTAGE (VOLTS) Figure 4. Output Power versus Supply Voltage Figure 5. Output Power versus Gate Voltage 100 VGS = 0 V f = 1.0 MHz 90 C, CAPACITANCE (pF) 80 70 Coss 60 50 40 Ciss 30 20 Crss 10 0 0 4 8 12 16 20 24 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 28 Figure 6. Capacitance versus Voltage MRF166W 5.2-112 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA f = 500 MHz Zin 400 500 ZOL* 400 Zo = 50 175 f = 175 MHz VDD = 28 Vdc, IDQ = 100 mA, Pout = 40 W f MHz Zin Ohms ZOL* Ohms 175 3.7 - j 22.4 15.2 - j 16.6 400 3.6 - j 10.99 10.3 - j 7.99 500 2.88 - j 7.96 6.12 - j 9.43 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency. NOTE: Input and output impedance values given are measured from gate to gate and drain to drain respectively. Table 1. Input and Output Impedances Figure 7. Series Equivalent Input/Output Impedance MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF166W 5.2-113 MRF166W-500MHZ M J B NOTES: 1) 3 X 5 inch Glass Teflon 32 Mil Board, Copper Both Sides (Scale 1:1) NOTES: 2) Small Holes are 40 Mils ID and Plated Through NOTES: 3) Large Holes are 140 Mils ID and Plated Through Figure 8. MRF166W Circuit Board Photomaster (Reduced 18% in printed data book, DL110/D) Figure 9. MRF166W Test Fixture MRF166W 5.2-114 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA Table 1. Common Source S-Parameters (VDS = 24 V, ID = 230 mA) S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 30 0.554 -85 20.30 128 0.044 28 0.628 -121 40 0.775 -113 20.00 113 0.040 26 0.632 -123 50 0.758 -124 17.50 107 0.041 20 0.652 -135 60 0.711 -132 14.60 100 0.050 20 0.570 -135 70 0.751 -139 12.70 100 0.042 11 0.666 -145 80 0.742 -143 11.30 95 0.043 9 0.666 -149 90 0.724 -146 10.00 92 0.042 8 0.657 -151 100 0.730 -149 8.97 90 0.042 6 0.663 -154 110 0.735 -151 8.29 87 0.043 3 0.683 -156 120 0.732 -153 7.53 84 0.042 2 0.666 -158 130 0.734 -155 7.01 83 0.042 1 0.688 -159 140 0.740 -156 6.57 81 0.043 0 0.701 -160 150 0.747 -157 6.01 78 0.042 -2 0.688 -162 160 0.748 -159 5.66 76 0.041 -4 0.715 -162 170 0.741 -160 5.22 76 0.040 -4 0.690 -161 180 0.746 -160 4.94 74 0.041 -4 0.719 -164 190 0.753 -161 4.67 73 0.041 -6 0.725 -165 200 0.756 -162 4.51 70 0.040 -7 0.729 -166 210 0.755 -162 4.15 69 0.039 -8 0.727 -165 220 0.759 -163 3.91 68 0.039 -8 0.724 -166 230 0.767 -163 3.75 65 0.039 -10 0.751 -169 240 0.769 -164 3.56 64 0.038 -12 0.733 -167 250 0.766 -164 3.41 63 0.037 -12 0.726 -167 260 0.767 -165 3.26 63 0.035 -10 0.725 -167 270 0.773 -165 3.07 61 0.035 -10 0.725 -167 280 0.777 -165 3.03 61 0.035 -11 0.753 -167 290 0.777 -166 2.89 58 0.034 -13 0.732 -169 300 0.782 -166 2.80 57 0.034 -11 0.744 -169 310 0.788 -166 2.66 57 0.034 -12 0.764 -169 320 0.794 -167 2.54 55 0.033 -12 0.760 -167 330 0.796 -167 2.47 54 0.032 -13 0.787 -169 340 0.795 -168 2.38 54 0.031 -13 0.753 -170 350 0.799 -168 2.27 52 0.030 -11 0.772 -168 360 0.804 -168 2.17 51 0.030 -11 0.782 -169 370 0.805 -168 2.15 50 0.030 -11 0.796 -169 380 0.807 -169 2.06 48 0.029 -12 0.782 -170 390 0.812 -169 2.00 48 0.028 -12 0.796 -170 400 0.818 -170 1.91 47 0.027 -10 0.784 -168 410 0.821 -170 1.86 46 0.029 -11 0.830 -170 420 0.821 -170 1.83 44 0.028 -11 0.823 -171 430 0.822 -171 1.74 44 0.026 -9 0.791 -170 440 0.826 -171 1.67 43 0.025 -7 0.788 -170 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF166W 5.2-115 AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA Table 1. Common Source S-Parameters (VDS = 24 V, ID = 230 mA) (continued) S11 f MHz |S11| 450 0.830 460 0.831 470 S21 S12 |S21| |S12| -171 1.68 42 -172 1.64 41 0.832 -172 1.54 480 0.835 -173 490 0.835 500 600 S22 |S22| 0.025 -7 0.820 -170 0.026 -10 0.843 -174 41 0.025 -7 0.827 -173 1.50 39 0.024 -3 0.836 -172 -173 1.43 38 0.024 1 0.835 -171 0.823 -174 1.43 37 0.025 3 0.849 -172 0.874 -176 1.12 29 0.003 -171 0.873 -176 700 0.910 -179 0.86 23 0.013 89 0.867 -177 800 0.932 179 0.74 18 0.035 61 0.904 178 900 0.966 176 0.63 12 0.029 68 0.897 179 1000 0.975 172 0.54 5 0.042 49 0.953 174 Table 2. Common Source S-Parameters (VDS = 28 V, ID = 250 mA) S11 f MHz |S11| 30 40 S21 S12 S22 |S21| |S12| |S22| 0.601 -86 22.20 128 0.040 29 0.796 -119 0.783 -112 21.20 114 0.037 27 0.616 -122 50 0.764 -122 18.50 108 0.038 21 0.637 -133 60 0.727 -131 15.50 101 0.045 21 0.574 -135 70 0.759 -138 13.50 100 0.039 12 0.648 -143 80 0.751 -142 12.10 95 0.040 9 0.649 -148 90 0.732 -146 10.70 93 0.040 8 0.641 -150 100 0.737 -149 9.55 90 0.040 6 0.648 -153 110 0.741 -150 8.81 88 0.040 4 0.670 -155 120 0.738 -153 8.01 85 0.040 3 0.654 -156 130 0.740 -154 7.47 83 0.040 2 0.675 -157 140 0.747 -156 7.01 82 0.040 1 0.684 -158 150 0.754 -157 6.43 79 0.040 -2 0.669 -161 160 0.757 -159 6.07 77 0.039 -3 0.693 -161 170 0.749 -159 5.59 76 0.038 -3 0.670 -161 180 0.753 -160 5.28 75 0.039 -4 0.701 -163 190 0.759 -161 4.99 73 0.039 -5 0.712 -164 200 0.761 -161 4.81 70 0.038 -7 0.719 -165 210 0.759 -162 4.44 70 0.037 -6 0.713 -163 220 0.762 -163 4.18 69 0.037 -7 0.709 -164 230 0.771 -164 4.03 66 0.037 -9 0.733 -167 240 0.775 -164 3.83 65 0.036 -10 0.715 -165 250 0.774 -165 3.69 64 0.035 -10 0.713 -166 260 0.775 -165 3.52 63 0.034 -10 0.715 -168 270 0.780 -165 3.29 61 0.034 -10 0.712 -168 280 0.782 -165 3.24 61 0.034 -11 0.741 -168 290 0.781 -166 3.10 59 0.032 -12 0.722 -168 300 0.785 -166 3.01 58 0.033 -11 0.733 -168 MRF166W 5.2-116 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA Table 2. Common Source S-Parameters (VDS = 28 V, ID = 250 mA) (continued) S11 f MHz |S11| 310 0.792 320 0.798 330 S21 S12 S22 |S21| |S12| |S22| -167 2.87 57 0.032 -12 0.750 -167 -167 2.75 56 0.032 -12 0.739 -166 0.801 -168 2.68 53 0.031 -13 0.760 -170 340 0.800 -168 2.58 53 0.030 -14 0.727 -172 350 0.803 -169 2.44 52 0.029 -12 0.755 -170 360 0.807 -169 2.33 50 0.029 -12 0.772 -171 370 0.808 -169 2.30 50 0.029 -12 0.787 -169 380 0.809 -169 2.19 48 0.028 -13 0.768 -170 390 0.813 -170 2.14 49 0.027 -13 0.775 -169 400 0.820 -170 2.06 47 0.026 -11 0.765 -167 410 0.823 -170 2.02 45 0.027 -12 0.805 -170 420 0.823 -171 1.98 44 0.026 -13 0.794 -173 430 0.824 -171 1.89 44 0.025 -12 0.778 -174 440 0.828 -172 1.83 43 0.024 -11 0.785 -173 450 0.832 -172 1.81 41 0.024 -10 0.812 -172 460 0.833 -172 1.75 41 0.025 -13 0.838 -175 470 0.835 -172 1.65 41 0.023 -11 0.817 -173 480 0.840 -172 1.60 40 0.022 -10 0.818 -172 490 0.844 -173 1.55 38 0.022 -10 0.819 -172 500 0.845 -173 1.56 37 0.022 -10 0.833 -173 600 0.879 -176 1.21 29 0.002 138 0.870 -176 700 0.912 -179 0.92 23 0.017 77 0.862 -176 800 0.935 179 0.79 18 0.039 58 0.887 179 900 0.966 176 0.67 11 0.030 69 0.892 179 1000 0.974 172 0.57 5 0.043 49 0.945 175 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF166W 5.2-117 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF171A N-Channel Enhancement-Mode MOSFET Designed primarily for wideband large-signal output and driver stages from 30-200 MHz. 45 W, 150 MHz MOSFET BROADBAND RF POWER FET * Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 45 Watts Power Gain = 17 dB (Min) Efficiency = 60% (Min) * Excellent Thermal Stability, Ideally Suited for Class A Operation * Facilitates Manual Gain Control, ALC and Modulation Techniques * 100% Tested for Load Mismatch At All Phase Angles with 30:1 VSWR * Low Crss - 8 pF @ VDS = 28 V D * Gold Top Metal Typical Data For Power Amplifier Applications in Industrial, Commercial and Amateur Radio Equipment * Typical Performance at 30 MHz, 28 Vdc Output Power = 30 Watts (PEP) Power Gain = 20 dB (Typ) Efficiency = 50% (Typ) IMD(d3) (30 Watts PEP) -32 dB (Typ) CASE 211-07, STYLE 2 G S * S-Parameters Available for Download into Frequency Domain Simulators. See http://motorola.com/sps/rf/designtds/ MAXIMUM RATINGS Rating Symbol Value Unit VDSS VDGR 65 Vdc 65 Vdc VGS ID 20 Adc 4.5 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 115 0.66 Watts W/C Storage Temperature Range Tstg TJ - 65 to +150 C 200 C Symbol Max Unit RJC 1.52 C/W Drain-Gate Voltage Drain-Gate Voltage (RGS = 1.0 M) Gate-Source Voltage Drain Current -- Continuous Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 80 -- Vdc Zero Gate Voltage Drain Current (VGS = 0, VDS = 28 V) IDSS -- -- 1.0 mAdc Gate-Source Leakage Current (VGS = 20 V, VDS = 0) IGSS -- -- 1.0 Adc OFF CHARACTERISTICS Drain-Source Breakdown Voltage (ID = 50 mA, VGS = 0) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 2 MRF171A 5.2-118 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS - continued (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit Gate Threshold Voltage (VDS = 10 V, ID = 50 mA) VGS(th) 1.5 2.5 4.5 Vdc Drain-Source On-Voltage (VGS = 10 V, ID = 3 A) VDS(on) -- 1.0 -- V Forward Transconductance (VDS = 10 V, ID = 2 A) gfs 1.4 1.8 -- mhos Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Ciss -- 60 -- pF Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Coss -- 70 -- pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Crss -- 8 -- pF Common Source Power Gain (VDD = 28 V, Pout = 45 W, f = 150 MHz, IDQ = 25 mA) Gps 17 19.5 -- dB Drain Efficiency (VDD = 28 V, Pout = 45 W, f = 150 MHz, IDQ = 25 mA) 60 70 -- % Characteristic ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL CHARACTERISTICS Electrical Ruggedness (VDD = 28 V, Pout = 45 W, f = 150 MHz, IDQ = 25 mA, VSWR 30:1 at All Phase Angles) No Degradation in Output Power TYPICAL FUNCTIONAL TESTS (SSB) Common Source Power Gain (VDD = 28 V, Pout = 30 W (PEP), IDQ = 100 mA, f = 30; 30.001 MHz) Gps -- 20 -- dB Drain Efficiency (VDD = 28 V, Pout = 30 W (PEP), IDQ = 100 mA, f = 30; 30.001 MHz) -- 50 -- % Intermodulation Distortion (VDD = 28 V, Pout = 30 W (PEP), IDQ = 100 mA, f = 30; 30.001 MHz) IMD(d3) -- -32 -- dB MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF171A 5.2-119 BIAS + RFC1 R2 R3 C6 C14 R1 RF INPUT Z2 L1 Z3 C1, C10 C2, C5, C8 C3 C4 C6, C14 C7 C9 C11, C12 C13 L1 L2 L3 L4 R1 C2 C1 C4 L3 Z6 L4 Z7 Z4 L2 DUT C3 C12 RFC2 Z5 Z1 C11 VDD 28 Vdc + + C13 VDC - C7 C8 C9 RF OUTPUT C10 C5 1000 pF, Chip Capacitor 2-20 pF, Trimmer Capacitors, Johanson 43 pF, 100 mil Chip Capacitor, ATC 120 pF, 100 mil Chip Capacitor, ATC 0.1 F, Capacitors 50 pF, 100 mil Chip Capacitor, ATC 12 pF, 100 mil Chip Capacitor, ATC 680 pF, Feedthru Capacitors 50 F, 50 V, Electrolytic Capacitor 2 Turns, 0.297 ID, 18 AWG 1-1/2 Turns, 0.265 ID, 18 AWG 1-1/4 Turns, 0.234 ID, 18 AWG 1-1/2 Turns, 0.250 ID, 18 AWG 68 , 1/2 W Chip Resistor R2 R3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 RFC1 RFC2 Board 1 k, 1/2 W Chip Resistor 10 k, 1/2 W Chip Resistor 0.160 x 0.400 Microstrip 0.160 x 0.600 Microstrip 0.160 x 0.600 Microstrip 0.160 x 0.900 Microstrip 0.160 x 0.800 Microstrip 0.160 x 0.800 Microstrip 0.160 x 0.400 Microstrip Ferroxcube VK200-19/4B 10 Turns, 0.250 ID, 20 AWG, Enamel 0.062, G10 1 oz. Copper Clad Both Sides, r = 2.56 Figure 1. MRF171A 150 MHz Test Circuit MRF171A 5.2-120 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 28 V + L2 C8 C9 C10 + C11 L1 VGG + C1 C2 C4 C5 RF OUTPUT R1 C7 R3 RF INPUT T2 C3 DUT T1 R2 C6 R4 C1, C3, C5, C6 C2, C4 C7 C8 C9, C10 C11 0.1 F, Chip Capacitors 1000 pF, Chip Capacitors 68 pF, Dipped Mica 0.1 F, Ceramic Cap or Equivalent 680 pF, Feedthru Capacitors 250 F, 50 V, Electrolytic Capacitor L1, L2 R1, R2 R3 R4 T1 T2 VK200 20/4B Ferrite Choke 200 , 1/2 W Carbon 3 , 1/2 W Carbon 270 , 2 W Carbon 4:1 Impedance Broadband Transformer 1:4 Impedance Broadband Transformer Figure 2. MRF171A 30 MHz Test Circuit MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF171A 5.2-121 60 70 50 60 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) PEP TYPICAL CHARACTERISTICS 40 30 20 VDD = 28 V IDQ = 100 mA f = 30 MHz TONE SEPARATION = 1 kHz 10 f = 100 MHz 150 MHz 50 200 MHz 40 30 20 VDD = 28 V IDQ = 25 mA 10 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Pin, INPUT POWER (WATTS) PEP 0.8 0.9 1.0 0 Figure 3. Output Power versus Input Power 1.6 1.8 2.0 70 16 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 0.6 0.8 1.0 1.2 1.4 Pin, INPUT POWER (WATTS) f = 100 MHz 150 MHz 14 200 MHz 12 10 8 6 4 VDD = 13.5 V IDQ = 25 mA 2 0.1 0 0.2 0.3 0.5 0.6 0.4 Pin, INPUT POWER (WATTS) 0.7 0.8 Pin = 1.0 W 60 50 0.5 W 40 30 0.1 W 20 IDQ = 25 mA f = 100 MHz 10 0 0 12 0.9 Figure 5. Output Power versus Input Power 14 18 16 20 22 24 VDD, DRAIN SUPPLY VOLTAGE (VOLTS) 26 28 Figure 6. Output Power versus Supply Voltage 70 80 60 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 0.4 Figure 4. Output Power versus Input Power 18 Pin = 2.0 W 50 40 1.0 W 30 0.3 W 20 IDQ = 25 mA f = 150 MHz 10 0 0.2 12 14 16 18 20 22 24 26 70 Pin = 4.0 W 60 3.0 W 50 2.0 W 40 30 20 IDQ = 25 mA f = 200 MHz 10 28 0 12 14 16 18 20 22 24 26 VDD, SUPPLY VOLTAGE (VOLTS) VDD, SUPPLY VOLTAGE (VOLTS) Figure 7. Output Power versus Supply Voltage Figure 8. Output Power versus Supply Voltage MRF171A 5.2-122 28 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA TYPICAL CHARACTERISTICS 3.0 45 VDS = 10 V TYPICAL DEVICE SHOWN, VGS(th) = 2.5 V 40 Pout , OUTPUT POWER (WATTS) ID , DRAIN CURRENT (AMPS) 2.5 35 2.0 30 25 1.5 Pin = CONSTANT VDD = 28 V IDQ = 25 mA f = 150 MHz TYPICAL DEVICE SHOWN, VGS(th) = 2.5 V 20 1.0 15 10 0.5 5 0 -1.0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS, GATE-SOURCE VOLTAGE (VOLTS) 4.5 5.0 Figure 9. Drain Current versus Gate Voltage (Transfer Characteristics) -0.5 0.5 1.0 1.5 0 VGS, GATE-SOURCE VOLTAGE (VOLTS) 2.0 2.5 Figure 10. Output Power versus Gate Voltage C, CAPACITANCE (pF) 1000 Coss 100 Ciss Crss 10 VGS = 0 V f = 1 MHz 1 0 5 10 15 25 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 30 Figure 11. Capacitance versus Drain-Source Voltage MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF171A 5.2-123 Zo = 10 f = 30 MHz f = 30 MHz ZOL* 200 150 100 Zin 200 150 100 VDD = 28 V, IDQ = 25 mA, Pout = 45 W f MHz Zin(1) ZOL(2) 30 12.8 - j3.6 11.5 - j0.99 100 3.1 - j11.6 4.9 - j4.9 150 2.0 - j6.5 4.2 - j4.9 200 2.2 - j6.0 3.0 - j2.9 (1) 68 shunt resistor gate-to-ground. (2) ZOL=Conjugate of the optimum load impedance into which the device operates at a given output power, voltage and frequency. Figure 12. Large-Signal Series Equivalent Input/Output Impedance MRF171A 5.2-124 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA (Scale 1:1) Figure 13. MRF171A Circuit Board Photo Master (Reduced 18% in printed data book, DL110/D) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF171A 5.2-125 AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA Table 1. Common Source S-Parameters (VDS = 12.5 V, ID = 0.5 A) S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 30 0.801 -162 11.90 96 0.026 13 0.811 -166 40 0.809 -166 9.12 91 0.028 11 0.812 -171 50 0.810 -169 7.29 88 0.027 11 0.831 -172 60 0.808 -170 6.22 85 0.028 9 0.824 -174 70 0.814 -172 5.30 82 0.028 9 0.831 -176 80 0.811 -173 4.56 81 0.027 10 0.837 -175 90 0.811 -174 4.04 80 0.027 13 0.829 -174 100 0.814 -174 3.66 77 0.027 12 0.846 -176 110 0.812 -175 3.37 75 0.027 11 0.842 -177 120 0.816 -175 3.00 74 0.027 13 0.850 -176 130 0.816 -176 2.75 73 0.027 14 0.849 -175 140 0.817 -176 2.57 72 0.027 17 0.851 -176 150 0.821 -176 2.37 69 0.027 17 0.863 -177 160 0.820 -176 2.27 67 0.027 17 0.853 -177 170 0.821 -177 2.08 66 0.026 19 0.838 -177 180 0.824 -177 1.93 65 0.027 19 0.861 -177 190 0.825 -177 1.89 64 0.027 21 0.873 -177 200 0.830 -177 1.74 62 0.027 23 0.873 -178 210 0.831 -177 1.67 60 0.027 25 0.874 -177 220 0.831 -178 1.62 59 0.026 28 0.870 -178 230 0.836 -178 1.48 57 0.027 27 0.909 -179 240 0.836 -178 1.43 56 0.027 26 0.865 -180 250 0.839 -178 1.37 57 0.028 30 0.873 -178 260 0.844 -178 1.30 54 0.028 34 0.882 -179 270 0.842 -178 1.28 52 0.028 36 0.887 -180 280 0.845 -179 1.21 52 0.027 37 0.881 -180 290 0.849 -179 1.14 50 0.027 36 0.869 179 300 0.849 -179 1.12 50 0.029 39 0.852 -180 310 0.855 -179 1.06 49 0.029 42 0.891 -179 320 0.856 -179 1.03 46 0.030 43 0.889 180 330 0.856 -180 0.96 45 0.031 47 0.868 180 340 0.858 -180 0.96 46 0.030 47 0.888 179 350 0.860 180 0.93 44 0.031 49 0.875 -180 360 0.862 180 0.91 44 0.033 48 0.901 179 370 0.866 180 0.86 43 0.034 50 0.913 178 380 0.867 179 0.84 41 0.036 52 0.897 178 390 0.869 179 0.82 42 0.035 54 0.893 178 400 0.870 179 0.78 40 0.035 57 0.880 180 410 0.872 179 0.77 39 0.037 55 0.923 178 420 0.876 178 0.73 37 0.039 54 0.915 176 430 0.877 178 0.69 38 0.040 56 0.903 177 440 0.879 178 0.68 39 0.041 58 0.921 178 MRF171A 5.2-126 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA Table 1. Common Source S-Parameters (VDS = 12.5 V, ID = 0.5 A) (continued) S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 450 0.882 177 0.68 36 0.040 61 0.926 178 460 0.884 177 0.65 36 0.041 59 0.937 175 470 0.886 177 0.62 35 0.041 60 0.896 176 480 0.885 176 0.62 33 0.044 61 0.907 176 490 0.886 176 0.61 32 0.046 63 0.907 176 500 0.887 176 0.59 31 0.047 65 0.916 175 Table 2. Common Source S-Parameters (VDS = 28 V, ID = 0.5 A) |S21| |S12| |S22| -152 17.10 100 0.025 17 0.730 -158 0.793 -158 13.20 94 0.027 13 0.730 -164 50 0.793 -162 10.50 90 0.027 12 0.754 -167 60 0.791 -165 9.00 87 0.027 11 0.746 -169 70 0.798 -167 7.68 83 0.026 10 0.760 -171 80 0.795 -169 6.63 82 0.026 10 0.770 -170 90 0.795 -170 5.85 80 0.026 12 0.760 -170 100 0.799 -170 5.30 77 0.026 10 0.779 -172 110 0.798 -171 4.86 75 0.026 11 0.775 -174 120 0.802 -172 4.35 74 0.025 13 0.785 -172 130 0.801 -172 3.97 72 0.025 14 0.788 -171 140 0.803 -173 3.70 71 0.025 15 0.791 -172 150 0.809 -173 3.42 68 0.025 14 0.808 -173 160 0.808 -173 3.27 66 0.025 15 0.796 -172 170 0.809 -174 2.99 65 0.024 18 0.783 -174 180 0.814 -174 2.77 63 0.025 19 0.809 -173 190 0.815 -175 2.71 62 0.024 21 0.820 -174 200 0.822 -175 2.49 60 0.024 22 0.826 -175 210 0.824 -175 2.37 57 0.024 24 0.836 -175 220 0.825 -175 2.23 57 0.024 26 0.807 -175 230 0.831 -176 2.08 56 0.024 29 0.839 -175 240 0.830 -176 2.00 54 0.024 29 0.818 -176 250 0.832 -176 1.92 55 0.024 33 0.828 -174 260 0.838 -176 1.81 53 0.024 35 0.829 -175 270 0.837 -176 1.79 50 0.025 37 0.834 -175 280 0.840 -177 1.69 50 0.025 39 0.832 -176 290 0.844 -177 1.60 48 0.025 39 0.836 -177 300 0.844 -177 1.55 48 0.025 44 0.814 -175 310 0.849 -178 1.48 47 0.026 46 0.848 -175 320 0.852 -178 1.43 44 0.027 45 0.855 -177 330 0.852 -178 1.35 43 0.028 48 0.833 -177 340 0.855 -178 1.32 44 0.028 49 0.861 -177 350 0.856 -178 1.29 41 0.029 53 0.842 -176 f MHz |S11| 30 0.783 40 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF171A 5.2-127 AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA Table 2. Common Source S-Parameters (VDS = 28 V, ID = 0.5 A) (continued) |S21| |S12| |S22| -179 1.25 42 0.030 54 0.872 -178 0.863 -179 1.18 39 0.030 55 0.886 -178 380 0.864 -179 1.15 38 0.031 55 0.864 -178 390 0.867 -179 1.12 39 0.032 57 0.862 -179 400 0.869 -180 1.07 37 0.032 60 0.853 -177 410 0.872 -180 1.05 35 0.035 60 0.898 -179 420 0.876 180 1.00 34 0.036 60 0.889 180 430 0.877 179 0.95 35 0.037 62 0.884 -179 440 0.879 179 0.93 34 0.038 64 0.902 -179 450 0.882 179 0.91 32 0.039 65 0.901 -180 460 0.884 178 0.88 32 0.041 64 0.922 179 470 0.885 178 0.84 32 0.040 66 0.877 179 480 0.885 178 0.83 30 0.042 66 0.892 179 490 0.886 177 0.81 29 0.044 68 0.891 179 500 0.887 177 0.80 28 0.045 68 0.900 178 f MHz |S11| 360 0.859 370 MRF171A 5.2-128 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field Effect Transistor N-Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 200 MHz frequency range. The high-power, high-gain and broadband performance of this device make possible solid state transmitters for FM broadcast or TV channel frequency bands. * Guaranteed Performance at 150 MHz, 28 V: Output Power = 80 W Gain = 11 dB (13 dB Typ) Efficiency = 55% Min. (60% Typ) D * Low Thermal Resistance * Ruggedness Tested at Rated Output Power * Nitride Passivated Die for Enhanced Reliability * Low Noise Figure -- 1.5 dB Typ at 2.0 A, 150 MHz G * Excellent Thermal Stability; Suited for Class A Operation CASE 211-11, STYLE 2 S * S-Parameters Available for Download into Frequency Domain Simulators. See http://motorola.com/sps/rf/designtds/ MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Drain-Gate Voltage VDGO 65 Vdc VGS 40 Vdc Drain Current -- Continuous ID 9.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 220 1.26 Watts W/C Storage Temperature Range Tstg -65 to +150 C TJ 200 C Symbol Max Unit RJC 0.8 C/W Gate-Source Voltage Operating Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 -- -- V Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0 V) IDSS -- -- 2.0 mA Gate-Source Leakage Current (VGS = 40 V, VDS = 0 V) IGSS -- -- 1.0 A Gate Threshold Voltage (VDS = 10 V, ID = 50 mA) VGS(th) 1.0 3.0 6.0 V Drain-Source On-Voltage (VDS(on), VGS = 10 V, ID = 3.0 A) VDS(on) -- -- 1.4 V gfs 1.8 2.2 -- OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VDS = 0 V, VGS = 0 V) ID = 50 mA ON CHARACTERISTICS Forward Transconductance (VDS = 10 V, ID = 2.0 A) mhos (continued) NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 10 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF173 5.2-129 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Input Capacitance (VDS = 28 V, VGS = 0 V, f = 1.0 MHz) Ciss -- 110 -- pF Output Capacitance (VDS = 28 V, VGS = 0 V, f = 1.0 MHz) Coss -- 105 -- pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0 V, f = 1.0 MHz) Crss -- 10 -- pF Noise Figure (VDD = 28 V, f = 150 MHz, IDQ = 50 mA) NF -- 1.5 -- dB Common Source Power Gain (VDD = 28 V, Pout = 80 W, f = 150 MHz, IDQ = 50 mA) Gps 11 13 -- dB Drain Efficiency (VDD = 28 V, Pout = 80 W, f = 150 MHz, IDQ = 50 mA) 55 60 -- % Electrical Ruggedness (VDD = 28 V, Pout = 80 W, f = 150 MHz, IDQ = 50 mA) Load VSWR 30:1 at all phase angles Series Equivalent Input Impedance (VDD = 28 V, Pout = 80 W, f = 150 MHz, IDQ = 50 mA) Zin -- 2.99 - j4.5 -- Ohms Series Equivalent Output Impedance (VDD = 28 V, Pout = 80 W, f = 150 MHz, IDQ = 50 mA) Zout -- 2.68 - j1.3 -- Ohms DYNAMIC CHARACTERISTICS FUNCTIONAL CHARACTERISTICS No Degradation in Output Power RFC1 R2 R1 + C8 - C9 C11 Z1 C12 + C10 - C13 VDD = 28 V + Vdc C14 - RFC2 RF OUTPUT D.U.T. L3 C16 RF INPUT C1 L4 R3 L1 C2 L2 C4 C5 C15 C6 C7 C3 C1, C15 -- 470 pF Unelco C2, C3, C5 -- 9-180 pF, Arco 463 C4, C6 -- 15 pF, Unelco C7 -- 5-80 pF, Arco 462 C8, C10, C14, C16 -- 0.1 F C9, C13 -- 50 F, 50 Vdc C11, C12 -- 680 pF, Feed Through L1 -- #16 AWG, 1-1/4 Turns, 0.3 ID L2 -- #16 AWG Hairpin 1 long L3 -- #14 AWG Hairpin 0.8 long L4 -- #14 AWG Hairpin 1.1 long RFC1 -- Ferroxcube VK200-19/4B RFC2 -- 18 Turns #18 AWG Enameled, 0.3 ID R1 -- 10 k, 10 Turns Bourns R2 -- 1.8 k, 1/4 W R3 -- 10 k, 1/2 W Z1 -- 1N5925A Motorola Zener Figure 1. 150 MHz Test Circuit MRF173 5.2-130 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA TYPICAL CHARACTERISTICS 120 80 f = 100 MHz 80 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 70 150 MHz 100 200 MHz 60 40 VDD = 28 V IDQ = 50 mA 20 0 0 1 2 3 4 5 6 7 8 9 50 150 MHz 40 200 MHz 30 20 VDD = 13.5 V IDQ = 50 mA 10 0 10 f = 100 MHz 60 0 2.0 4.0 Pin, INPUT POWER (WATTS) Figure 2. Output Power versus Input Power IDQ = 50 mA f = 100 MHz 120 Pin = 4.0 W Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 10 14 12 140 100 2.0 W 60 1.0 W 40 20 12 14 16 18 20 22 24 26 28 IDQ = 50 mA f = 150 MHz Pin = 8.0 W 100 3.0 W 80 0 10 8.0 Figure 3. Output Power versus Input Power 140 120 6.0 Pin, INPUT POWER (WATTS) 80 4.0 W 60 2.0 W 40 20 0 10 30 6.0 W 12 14 VDD, SUPPLY VOLTAGE (VOLTS) 16 18 20 22 24 26 28 30 VDD, SUPPLY VOLTAGE (VOLTS) Figure 4. Output Power versus Supply Voltage Figure 5. Output Power versus Supply Voltage 22 140 Pout , OUTPUT POWER (WATTS) IDQ = 50 mA f = 200 MHz Pin = 14 W 100 10 W 80 6.0 W 60 4.0 W 40 G PS , POWER GAIN (dB) 20 120 Pout = 80 W VDD = 28 V IDQ = 50 mA 18 16 14 12 10 8.0 6.0 20 0 10 4.0 12 14 16 18 20 22 24 26 28 30 2.0 20 VDD, SUPPLY VOLTAGE (VOLTS) Figure 6. Output Power versus Supply Voltage MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 40 60 80 100 120 140 160 f, FREQUENCY (MHz) 180 200 220 Figure 7. Power Gain versus Frequency MRF173 5.2-131 6.0 f = 150 MHz Pin = CONSTANT VDS = 28 V IDQ = 50 mA VGS(th) = 3.0 V 70 60 50 ID , DRAIN CURRENT (AMPS) 40 30 20 5.0 VDS = 10 V VGS(th) = 3.0 V 4.0 3.0 2.0 1.0 10 0 -14 0 -12 -10 -8.0 -6.0 -4.0 -2.0 0 2.0 VGS, GATE-SOURCE VOLTAGE (VOLTS) 4.0 6.0 0 VGS , GATE-SOURCE VOLTAGE (NORMALIZED) Figure 8. Output Power versus Gate Voltage 1.0 2.0 3.0 4.0 5.0 VGS, GATE-SOURCE VOLTAGE (VOLTS) 6.0 Figure 9. Drain Current versus Gate Voltage 140 420 1.2 Ciss VDS = 28 V 120 360 100 300 ID = 3.0 A 1.0 500 mA 50 mA 0.8 VGS = 0 V FREQ = 1 MHz 240 1.0 A 0.9 0.7 -25 C oss , CAPACITANCE (pF) 1.1 60 180 Coss 120 Crss 60 0 25 50 75 100 125 150 175 0 TC, CASE TEMPERATURE (C) Figure 10. Gate-Source Voltage versus Case Temperature 80 0 4 8 12 16 20 24 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 40 20 28 Crss , C iss , CAPACITANCE (pF) Pout , OUTPUT POWER (WATTS) 80 0 Figure 11. Capacitance versus Drain Voltage ID , DRAIN CURRENT (AMPS) 10 5.0 2.0 TC = 25C 1.0 0.5 0.2 0.1 1.0 2.0 4.0 6.0 10 20 40 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 60 100 Figure 12. DC Safe Operating Area MRF173 5.2-132 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA Table 1. Common Source S-Parameters (VDS = 12.5 V, ID = 4 A) S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 30 0.879 -170 8.09 92 0.014 23 0.839 -174 40 0.883 -173 6.19 87 0.016 24 0.839 -179 50 0.885 -174 4.94 84 0.016 28 0.853 -178 60 0.885 -175 4.21 81 0.017 30 0.845 180 70 0.888 -176 3.57 77 0.017 34 0.849 179 80 0.888 -177 3.06 77 0.017 37 0.852 -179 90 0.888 -178 2.71 76 0.018 42 0.842 -179 100 0.890 -178 2.45 72 0.019 43 0.858 180 110 0.888 -179 2.28 70 0.020 46 0.859 179 120 0.892 -179 2.02 69 0.021 50 0.872 -180 130 0.893 -179 1.84 67 0.022 52 0.870 -179 140 0.894 -180 1.73 66 0.023 55 0.880 -180 150 0.896 -180 1.58 64 0.024 55 0.887 180 160 0.896 180 1.51 61 0.026 56 0.863 180 170 0.898 179 1.38 60 0.026 60 0.850 179 180 0.899 179 1.28 58 0.028 60 0.871 179 190 0.899 179 1.25 57 0.030 62 0.890 178 200 0.902 179 1.15 55 0.030 63 0.884 178 210 0.902 179 1.12 53 0.032 63 0.899 178 220 0.904 178 1.08 51 0.034 65 0.893 178 230 0.907 178 0.97 49 0.037 65 0.941 176 240 0.907 178 0.95 48 0.037 65 0.884 176 250 0.909 178 0.90 49 0.039 67 0.896 177 260 0.911 177 0.85 48 0.039 68 0.888 176 270 0.909 177 0.83 46 0.042 68 0.895 176 280 0.913 177 0.78 45 0.044 69 0.893 175 290 0.914 177 0.74 42 0.044 69 0.882 174 300 0.915 176 0.74 42 0.047 72 0.877 175 310 0.917 176 0.70 41 0.048 73 0.909 176 320 0.916 176 0.69 39 0.052 71 0.912 175 330 0.917 176 0.65 37 0.055 71 0.885 173 340 0.919 176 0.65 38 0.055 70 0.898 173 350 0.919 175 0.62 36 0.057 72 0.887 174 360 0.920 175 0.60 37 0.059 72 0.918 172 370 0.921 175 0.57 35 0.061 71 0.929 172 380 0.923 175 0.56 34 0.063 71 0.900 172 390 0.925 175 0.54 36 0.065 71 0.907 171 400 0.926 174 0.51 34 0.067 75 0.902 173 410 0.927 174 0.51 33 0.070 73 0.942 170 420 0.929 174 0.49 31 0.071 71 0.926 169 430 0.929 173 0.46 32 0.072 72 0.901 170 440 0.930 173 0.45 32 0.076 73 0.904 170 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF173 5.2-133 AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA Table 1. Common Source S-Parameters (VDS = 12.5 V, ID = 4 A) (continued) S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 450 0.932 173 0.45 29 0.079 75 0.924 170 460 0.932 172 0.44 30 0.082 71 0.938 167 470 0.933 172 0.42 30 0.081 73 0.908 168 480 0.931 172 0.42 29 0.086 72 0.933 168 490 0.931 171 0.41 28 0.089 72 0.926 167 500 0.931 171 0.41 27 0.092 71 0.936 167 Table 2. Common Source S-Parameters (VDS = 28 V, ID = 4 A) S11 f MHz |S11| 30 0.840 40 0.849 50 S21 S22 |S21| |S12| |S22| -163 11.48 92 0.016 20 0.718 -169 -167 8.80 86 0.017 22 0.713 -174 0.853 -170 6.99 82 0.017 24 0.748 -174 60 0.854 -171 5.92 79 0.017 23 0.746 -175 70 0.859 -172 5.00 74 0.018 25 0.746 -175 80 0.859 -174 4.29 73 0.018 30 0.741 -174 90 0.861 -174 3.77 71 0.019 38 0.735 -174 100 0.866 -175 3.39 67 0.018 40 0.768 -176 110 0.865 -175 3.12 64 0.018 41 0.782 -177 120 0.871 -176 2.75 63 0.019 42 0.794 -175 130 0.875 -176 2.49 60 0.021 45 0.783 -172 140 0.877 -177 2.31 59 0.023 51 0.776 -175 150 0.883 -177 2.10 56 0.023 55 0.806 -176 160 0.884 -177 1.99 53 0.023 58 0.807 -176 170 0.886 -178 1.82 51 0.023 61 0.806 -176 180 0.890 -178 1.66 49 0.025 59 0.820 -175 190 0.891 -179 1.62 48 0.027 60 0.815 -176 200 0.896 -179 1.47 46 0.030 63 0.819 -177 210 0.898 -179 1.41 43 0.031 67 0.842 -178 220 0.901 -179 1.36 41 0.032 70 0.855 -178 230 0.905 -180 1.22 38 0.033 70 0.906 -178 240 0.906 -180 1.19 38 0.034 67 0.845 -178 250 0.909 180 1.11 39 0.037 68 0.831 -178 260 0.913 180 1.03 37 0.038 70 0.837 -180 270 0.912 179 0.10 35 0.041 72 0.859 179 280 0.916 179 0.93 34 0.042 74 0.876 178 290 0.918 179 0.88 31 0.041 73 0.865 179 300 0.919 178 0.87 31 0.044 74 0.837 -180 310 0.922 178 0.83 31 0.046 74 0.863 180 320 0.922 178 0.80 27 0.051 73 0.879 177 330 0.924 177 0.75 26 0.054 74 0.878 176 340 0.926 177 0.74 27 0.053 74 0.897 177 350 0.926 177 0.71 24 0.054 77 0.879 179 MRF173 5.2-134 S12 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA Table 2. Common Source S-Parameters (VDS = 28 V, ID = 4 A) (continued) S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 360 0.927 177 0.68 26 0.056 75 0.888 177 370 0.929 177 0.64 24 0.058 73 0.893 175 380 0.931 176 0.62 23 0.062 72 0.885 174 390 0.934 176 0.60 25 0.064 74 0.903 174 400 0.934 176 0.57 22 0.065 78 0.898 177 410 0.936 175 0.56 21 0.068 77 0.931 175 420 0.938 175 0.53 20 0.070 74 0.906 173 430 0.938 174 0.51 21 0.072 73 0.885 173 440 0.939 174 0.49 21 0.075 75 0.895 172 450 0.941 174 0.48 19 0.080 78 0.923 172 460 0.941 173 0.47 19 0.082 75 0.940 171 470 0.942 173 0.45 18 0.080 75 0.904 172 480 0.940 173 0.44 18 0.083 74 0.910 171 490 0.940 172 0.43 18 0.088 72 0.906 169 500 0.940 172 0.42 17 0.092 72 0.927 168 DESIGN CONSIDERATIONS The MRF173 is a RF MOSFET power N-channel enhancement mode field-effect transistor (FET) designed for VHF power amplifier applications. Motorola's RF MOSFETs feature a vertical structure with a planar design, thus avoiding the processing difficulties associated with V-groove power FETs. Motorola Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs. The major advantages of RF power FETs include high gain, low noise, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. Power output can be varied over a wide range with a low power dc control signal, thus facilitating manual gain control, ALC and modulation. DC BIAS The MRF173 is an enhancement mode FET and, therefore, does not conduct when drain voltage is applied. Drain current flows when a positive voltage is applied to the gate. See Figure 9 for a typical plot of drain current versus gate voltage. RF power FETs require forward bias for optimum performance. The value of quiescent drain current (I DQ ) is not critical for many applications. The MRF173 was characterized at IDQ = 50 mA, which is the suggested minimum value of IDQ. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of the MRF173 may be controlled from its rated value down to zero (negative gain) by varying the dc gate voltage. This feature facilitates the design of manual gain control, AGC/ALC and modulation systems. (see Figure 8.) AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar VHF transistors are suitable for MRF173. See Motorola Application Note AN721, Impedance Matching Networks Applied to RF Power Transistors. The higher input impedance of RF MOSFETs helps ease the task of broadband network design. Both small-signal scattering parameters and large-signal impedances are provided. While the s-parameters will not produce an exact design solution for high power operation, they do yield a good first approximation. This is an additional advantage of RF MOS power FETs. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF173 5.2-135 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF174 N-Channel Enhancement-Mode . . . designed primarily for wideband large-signal output and driver stages up to 200 MHz frequency range. * Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB Efficiency = 50% (Min) 125 W, to 200 MHz N-CHANNEL MOS BROADBAND RF POWER FET * Excellent Thermal Stability, Ideally Suited For Class A Operation * Facilitates Manual Gain Control, ALC and Modulation Techniques * 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR * Low Noise Figure -- 3.0 dB Typ at 2.0 A, 150 MHz D G CASE 211-11, STYLE 2 S MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Drain-Gate Voltage (RGS = 1.0 M) VDGR 65 Vdc VGS 40 Vdc Drain Current -- Continuous ID 13 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 270 1.54 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Symbol Max Unit RJC 0.65 C/W Gate-Source Voltage Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Handling and Packaging -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 7 MRF174 5.2-136 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Drain-Source Breakdown Voltage (VGS = 0, ID = 50 mA) V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) IDSS -- -- 10 mAdc Gate-Source Leakage Current (VGS = 20 V, VDS = 0) IGSS -- -- 1.0 Adc Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) VGS(th) 1.0 3.0 6.0 Vdc Forward Transconductance (VDS = 10 V, ID = 3.0 A) gfs 1.75 2.5 -- mhos Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Ciss -- 175 -- pF Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Coss -- 190 -- pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Crss -- 40 -- pF Noise Figure (VDD = 28 Vdc, ID = 2.0 A, f = 150 MHz) NF -- 3.0 -- dB Common Source Power Gain (VDD = 28 Vdc, Pout = 125 W, f = 150 MHz, IDQ = 100 mA) Gps 9.0 11.8 -- dB Drain Efficiency (VDD = 28 Vdc, Pout = 125 W, f = 150 MHz, IDQ = 100 mA) 50 60 -- % Electrical Ruggedness (VDD = 28 Vdc, Pout = 125 W, f = 150 MHz, IDQ = 100 mA, VSWR 30:1 at all Phase Angles) OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL CHARACTERISTICS (Figure 1) No Degradation in Output Power L4 R2 BIAS ADJUST R3 + C9 - C12 C13 R1 C10 D1 C14 C11 + VDD = 28 V - RFC1 R4 C3 RF INPUT C1 C2 C8 L1 L2 C4 C5 RF OUTPUT L3 C6 DUT C1 -- 15 pF Unelco C2 -- Arco 462, 5.0 - 80 pF C3 -- 100 pF Unelco C4 -- 25 pF Unelco C6 -- 40 pF Unelco C7 -- Arco 461, 2.7 - 30 pF C5, C8 -- Arco 463, 9.0 - 180 pF C9, C11, C14 -- 0.1 F Erie Redcap C10 -- 50 F, 50 V C12, C13 -- 680 pF Feedthru D1 -- 1N5925A Motorola Zener C7 L1 -- #16 AWG, 1-1/4 Turns, 0.213 ID L2 -- #16 AWG, Hairpin 0.25 0.062 0.47 0.2 L4 -- 10 Turns #16 AWG Enameled Wire on R1 RFC1 -- 18 Turns #16 AWG Enameled Wire, 0.3 ID R1 -- 10 , 2.0 W R2 -- 1.8 k, 1/2 W R3 -- 10 k, 10 Turn Bourns R4 -- 10 k, 1/4 W L3 -- #14 AWG, Hairpin Figure 1. 150 MHz Test Circuit MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF174 5.2-137 140 80 150 MHz f = 100 MHz 120 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) f = 100 MHz 200 MHz 100 80 60 40 VDD = 28 V IDQ = 100 mA 20 0 4 2 6 8 10 12 200 MHz 50 40 30 VDD = 13.5 V IDQ = 100 mA 20 0 14 0 4 2 6 8 10 12 14 Pin, INPUT POWER (WATTS) Pin, INPUT POWER (WATTS) Figure 2. Output Power versus Input Power Figure 3. Output Power versus Input Power 160 16 160 IDQ = 100 mA f = 100 MHz 140 Pin = 6 W Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 60 10 0 120 4W 100 80 2W 60 40 20 140 IDQ = 100 mA f = 150 MHz Pin = 12 W 120 8W 100 80 4W 60 40 20 0 0 12 14 16 18 20 22 24 26 28 12 14 16 18 20 22 24 26 VDD, SUPPLY VOLTAGE (VOLTS) VDD, SUPPLY VOLTAGE (VOLTS) Figure 4. Output Power versus Supply Voltage Figure 5. Output Power versus Supply Voltage 160 28 22 IDQ = 100 mA f = 200 MHz 140 20 120 Pin = 16 W 100 12 W 80 8W Pout = 125 W VDD = 28 V IDQ = 100 mA 18 G PS , POWER GAIN (dB) Pout , OUTPUT POWER (WATTS) 150 MHz 70 60 40 16 14 12 10 8 6 20 4 0 12 14 16 18 20 22 24 26 28 2 20 40 60 80 100 120 140 160 180 200 VDD, SUPPLY VOLTAGE (VOLTS) f, FREQUENCY (MHz) Figure 6. Output Power versus Supply Voltage Figure 7. Power Gain versus Frequency MRF174 5.2-138 220 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 5 f = 150 MHz Pin = CONSTANT IDQ = 100 mA VDD = 28 V 140 120 I D, DRAIN CURRENT (AMPS) Pout , OUTPUT POWER (WATTS) 160 100 80 60 40 4 VDS = 10 V 3 2 TYPICAL DEVICE SHOWN, VGS(th) = 3 V 1 20 TYPICAL DEVICE SHOWN, VGS(th) = 3 V -12 -10 -8 -6 -4 -2 2 0 4 0 6 1 2 3 4 5 6 VGS, GATE-SOURCE VOLTAGE (VOLTS) VGS, GATE-SOURCE VOLTAGE (VOLTS) Figure 8. Output Power versus Gate Voltage Figure 9. Drain Current versus Gate Voltage (Transfer Characteristics) 1000 1.2 900 VDD = 28 V 1.1 ID = 4 A 1 3A 2A 0.9 100 mA 0.8 - 25 0 25 50 75 100 125 VGS = 0 V f = 1 MHz 800 C, CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (NORMALIZED) 0 -14 150 175 700 600 500 400 300 Coss 200 Ciss 100 Crss 0 0 TC, CASE TEMPERATURE (C) Figure 10. Gate-Source Voltage versus Case Temperature 4 8 12 16 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 24 28 Figure 11. Capacitance versus Drain Voltage 20 I D, DRAIN CURRENT (AMPS) 10 6 4 TC = 25C 2 1 0.6 0.4 0.2 1 2 4 6 10 20 40 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 60 100 Figure 12. DC Safe Operating Area MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF174 5.2-139 f (MHz) S11 S21 S12 S22 2.0 |S11| 0.932 - 133 |S21| 74.0 112 |S12| 0.011 23 |S22| 0.835 - 151 5.0 0.923 - 160 31.6 98 0.011 12 0.886 - 168 10 0.921 - 170 16.0 93 0.011 10 0.896 - 174 20 0.921 - 175 8.00 88 0.011 12 0.899 - 177 30 0.921 - 177 5.32 86 0.011 16 0.900 - 178 40 0.921 - 177 3.98 83 0.012 21 0.901 - 178 50 0.922 - 178 3.17 81 0.012 26 0.902 - 178 60 0.923 - 178 2.63 79 0.012 30 0.903 - 178 70 0.924 - 178 2.24 77 0.013 34 0.904 - 178 80 0.925 - 178 1.95 75 0.013 39 0.906 - 178 90 0.927 - 178 1.72 73 0.014 43 0.907 - 178 100 0.930 - 178 1.50 71 0.016 45 0.910 - 178 110 0.930 - 178 1.31 70 0.018 46 0.912 - 178 120 0.931 - 178 1.19 68 0.019 47 0.914 - 178 130 0.942 - 178 1.10 67 0.019 49 0.919 - 178 140 0.936 - 178 1.01 66 0.021 50 0.921 - 178 150 0.938 - 178 0.936 65 0.021 53 0.922 - 178 160 0.938 - 178 0.879 64 0.022 53 0.923 - 178 170 0.940 - 178 0.830 63 0.023 54 0.923 - 177 180 0.942 - 178 0.780 61 0.024 56 0.924 - 177 190 0.942 - 178 0.737 60 0.026 59 0.928 - 177 200 0.952 - 178 0.705 59 0.027 58 0.929 - 177 210 0.950 - 178 0.668 57 0.029 61 0.934 - 177 220 0.942 - 178 0.626 56 0.030 61 0.933 - 177 230 0.943 - 178 0.592 56 0.032 62 0.939 - 177 240 0.946 - 177 0.566 55 0.033 64 0.941 - 177 250 0.952 - 177 0.545 54 0.035 64 0.943 - 177 260 0.958 - 177 0.523 53 0.036 65 0.946 - 177 270 0.956 - 177 0.500 52 0.038 67 0.943 - 177 280 0.960 - 177 0.481 52 0.039 68 0.946 - 177 290 0.956 - 178 0.460 51 0.042 68 0.944 - 177 300 0.955 - 178 0.443 50 0.043 68 0.947 - 177 Table 1. Common Source Scattering Parameters VDS = 28 V, ID = 3.0 A MRF174 5.2-140 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA + j50 + 90 + j25 + j100 + 60 +120 300 + j150 + j10 250 +150 + j250 + j500 10 300 0 25 50 100 150 .05 250 500 180 f = 30 MHz .04 .03 .02 + 30 200 150 100 50 f = 30 MHz .01 0 - j500 - j250 - j10 - 30 -150 - j150 - j100 - j25 - 60 -120 - j50 - 90 Figure 13. S11, Input Reflection Coefficient versus Frequency VDS = 28 V, ID = 3.0 A Figure 14. S12, Reverse Transmission Coefficient versus Frequency VDS = 28 V, ID = 3.0 A + j50 + 90 f = 30 MHz + j25 + 60 +120 + j100 + j150 50 + 30 +150 180 5 4 3 2 1 100 150 300 + j10 + j250 + j500 0 0 f = 30 MHz 25 50 100 150 250 500 300 - j500 - j250 - j10 - 30 -150 - 60 -120 - j150 - j100 - j25 - 90 - j50 Figure 15. S21, Forward Transmission Coefficient versus Frequency VDS = 28 V, ID = 3.0 A Figure 16. S22, Output Reflection Coefficient versus Frequency VDS = 28 V, ID = 3.0 A MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF174 5.2-141 150 f = 200 MHz f = 200 MHz 100 100 Zin Pout = 125 W, VDD = 28 V IDQ = 100 mA ZOL* 30 30 150 Zo = 10 ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a ZOL* = given output power, voltage and frequency. f MHz Zin Ohms ZOL* Ohms 30 100 150 200 2.90 - j3.95 1.25 - j2.90 1.18 - j1.40 1.30 - j0.90 2.95 - j3.90 1.85 - j1.05 1.72 - j0.05 1.70 + j0.25 Figure 17. Series Equivalent Input/Output Impedance, Zin, ZOL* MRF174 5.2-142 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA DESIGN CONSIDERATIONS The MRF174 is a RF power N-Channel enhancement mode field-effect transistor (FET) designed especially for UHF power amplifier and oscillator applications. Motorola RF MOSFETs feature a vertical structure with a planar design, thus avoiding the processing difficulties associated with V- groove vertical power FETs. Motorola Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs. The major advantages of RF power FETs include high gain, low noise, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. Power output can be varied over a wide range with a low power dc control signal, thus facilitating manual gain control, ALC and modulation. DC BIAS The MRF174 is an enhancement mode FET and, therefore, does not conduct when drain voltage is applied. Drain current flows when a positive voltage is applied to the gate. See Figure 9 for a typical plot of drain current versus gate voltage. RF power FETs require forward bias for optimum performance. The value of quiescent drain current (IDQ) is not critical for many applications. The MRF174 was charac- terized at IDQ = 100 mA, which is the suggested minimum value of IDQ. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of the MRF174 may be controlled from its rated value down to zero (negative gain) by varying the dc gate voltage. This feature facilitates the design of manual gain control, AGC/ALC and modulation systems. (See Figure 8.) AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar UHF transistors are suitable for MRF174. See Motorola Application Note AN721, Impedance Matching Networks Applied to RF Power Transistors. The higher input impedance of RF MOSFETs helps ease the task of broadband network design. Both small signal scattering parameters and large signal impedances are provided. While the s-parameters will not produce an exact design solution for high power operation, they do yield a good first approximation. This is an additional advantage of RF MOS power FETs. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF174 5.2-143 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push-pull configurations. Can be used in manual gain control, ALC and modulation circuits. 100 W, 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET N-Channel Enhancement Mode MOSFET * Typical Performance at 400 MHz, 28 V: Output Power -- 100 W Gain -- 12 dB Efficiency -- 60% 2 * Low Thermal Resistance * Low Crss -- 10 pF Typ @ VDS = 28 Volts * Ruggedness Tested at Rated Output Power * Nitride Passivated Die for Enhanced Reliability 6 5, 8 1, 4 7 * Excellent Thermal Stability; Suited for Class A Operation 3 CASE 744A-01, STYLE 2 * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. * S-Parameters Available for Download into Frequency Domain Simulators. See http://motorola.com/sps/rf/designtds/ MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Rating VDSS 65 Vdc Drain-Gate Voltage (RGS = 1.0 M) VDGR 65 Vdc VGS 40 Vdc Gate-Source Voltage Drain Current -- Continuous ID 16 Adc Total Device Dissipation @ TC = 25C (1) Derate above 25C PD 270 1.54 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Symbol Max Unit RJC 0.65 C/W Operating Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case (1) Total device dissipation rating applies only when the device is operated as an RF push-pull amplifier. NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 9 MRF177 5.2-144 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic (1) Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) IDSS -- -- 2.0 mAdc Gate-Source Leakage Current (VGS = 20 V, VDS = 0) IGSS -- -- 1.0 Adc Gate Threshold Voltage (VDS = 10 V, ID = 50 mA) VGS(th) 1.0 3.0 6.0 Vdc Drain-Source On-Voltage (VGS = 10 V, ID = 3.0 A) VDS(on) -- -- 1.4 Vdc Forward Transconductance (VDS = 10 V, ID = 2.0 A) gfs 1.8 2.2 -- mhos Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Ciss -- 100 -- pF Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Coss -- 105 -- pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Crss -- 10 -- pF Common Source Power Gain (VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 200 mA) GPS 10 12 -- dB Drain Efficiency (VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 200 mA) 55 60 -- % Electrical Ruggedness (VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 200 mA, Load VSWR = 30:1, All Phase Angles At Frequency of Test) OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 50 mA) ON CHARACTERISTICS (1) DYNAMIC CHARACTERISTICS (1) FUNCTIONAL CHARACTERISTICS (Figure 8) (2) No Degradation in Output Power Before & After Test (1) Note each transistor chip measured separately (2) Both transistor chips operating in push-pull amplifier MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF177 5.2-145 TYPICAL CHARACTERISTICS 140 50 120 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) f = 150 MHz 225 MHz 100 80 400 MHz 60 40 VDD = 28 V IDQ = 200 mA 20 0 0 2 4 6 Pin, INPUT POWER (WATTS) 8 f = 225 MHz 40 400 MHz 30 20 10 0 10 VDD = 13.5 V IDQ = 200 mA 0 2 Figure 1. Output Power versus Input Power 10 100 Pin = 10 W 120 IDQ = 200 mA f = 400 MHz 100 f = 400 MHz Pin = CONSTANT 90 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 8 Figure 2. Output Power versus Input Power 140 6.3 W 80 4W 60 40 20 0 4 6 Pin, INPUT POWER (WATTS) VDS = 28 V IDQ = 200 mA 80 70 60 50 40 30 20 10 10 12 14 16 18 20 22 24 26 28 0 30 -5 -4 -3 -2 -1 0 1 2 3 4 5 VGS, GATE-SOURCE VOLTAGE (VOLTS) VDD, SUPPLY VOLTAGE (VOLTS) Figure 3. Output Power versus Supply Voltage Figure 4. Output Power versus Gate Voltage 140 420 100 120 300 100 VGS = 0 V f = 1 MHz 240 80 60 180 Coss 120 Crss 60 0 40 0 4 8 12 16 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 20 0 28 24 Figure 5. Capacitance versus Drain Voltage MRF177 5.2-146 ID , DRAIN CURRENT (AMPS) 360 Crss , C iss , CAPACITANCE (pF) C oss , CAPACITANCE (pF) Ciss 20 10 TC = 25 C 4 2 1 0.4 0.2 0.1 1 2 4 6 10 20 40 60 100 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) Figure 6. DC Safe Operating Area MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA f = 400 MHz f = 400 MHz Zo = 10 ZOL* 200 150 Zin 100 200 150 100 NOTE: Input and Output Impedance values given are measured gate-to-gate and drain-to-drain respectively. VDD = 28 V IDQ = 200 mA Pout = 100 W f Zin ZOL* (MHz) Ohms Ohms 100 2.0 - j11.5 3.5 - j6 150 2.05 - j9.45 3.35 - j5.34 200 2.1 - j7.5 3.3 - j4.4 400 2.35 + j0.4 3.2 - j1.38 ZOL*: Conjugate of optimum load impedance into which the device operates at a given output power, voltage, current and frequency. Figure 7. Impedance or Admittance Coordinates MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF177 5.2-147 VDD = 28 V + D1 R3 C14 + R2 + C16 C15 L1 C17 FERRITE BEAD + C18 FERRITE BEAD FERRITE BEAD R1 R4 C13 + C2 RF INPUT C1 L2 MRF177 T2 C10 C5 MS1 MS3 MS2 MS4 C7 C4 T1 T3 C3 C8 C6 D.U.T. C9 C11 T4 RF OUTPUT C12 R5 MICROSTRIP DETAIL 0.15 0.325 0.325 0.10 0.45 MS1 MS3 0.45 0.45 MS2 MS4 0.45 0.10 0.15 0.325 C1, C12 C2, C3, C5, C6, C10, C11 C4, C9 C7 C8 C13, C14 C15, C18 C16 C17 0.15 0.10 0.10 0.15 0.325 1-10 pF JOHANSON OR EQUIVALENT D1 L1 270 pF ATC 100 MIL CHIP CAP L2 1-20 pF R1, R4, R5 36 pF CHIP CAP R2 10 pF CHIP CAP R3 0.1 FD @ 50 Vdc T1 10 FD @ 50 Vdc T2 500 pF BUTTON T3 1000 pF UNCASED MICA T4 BOARD 1N5347B, 20 Vdc 1-TURN NO. 18, 0.25, 2-HOLE FERRITE BEAD 8-1/2 TURNS NO. 18, CLOSE WOUND .375 DIA. 10 k @ 1/2 W RESISTOR 10 k, 10 TURN RESISTOR 2.0 k @ 1/2 W RESISTOR 1-1/2 T, 50 COAX, .034 DIA. ON DUAL 0.5 FERRITE CORE 2.0 25 COAX, .075 DIA. 2.1 10 COAX, .075 DIA. 4.0 50 COAX, .0865 DIA. Dielectric Thickness = 0.060 2oz Copper, Cu-Clad, Teflon Fiberglass, r = 2.55 Figure 8. Test Circuit Electrical Schematic MRF177 5.2-148 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOTE: S-Parameter data represents measurements taken from one chip only. AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA Table 1. Common Source S-Parameters (VDS = 24 V, ID = 0.4 A) S11 f MHz |S11| 30 0.797 40 S21 S12 S22 |S21| |S12| -154 12.40 88 0.029 2 0.756 -159 0.739 -161 9.06 89 0.027 8 0.702 -165 50 0.749 -164 6.84 85 0.026 7 0.707 -168 60 0.770 -163 6.06 80 0.027 3 0.754 -168 70 0.790 -164 5.40 73 0.027 -1 0.776 -168 80 0.800 -166 4.60 70 0.026 -1 0.777 -168 90 0.808 -167 3.94 67 0.025 -1 0.795 -168 100 0.816 -168 3.47 64 0.024 -1 0.809 -169 110 0.816 -169 3.14 62 0.023 1 0.809 -169 120 0.815 -170 2.76 61 0.022 6 0.794 -169 130 0.821 -171 2.45 59 0.021 12 0.799 -170 140 0.828 -171 2.27 56 0.022 18 0.806 -169 150 0.836 -171 2.10 53 0.028 25 0.805 -169 160 0.861 -172 1.96 51 0.032 -6 0.823 -168 170 0.863 -173 1.77 49 0.020 -4 0.836 -166 180 0.869 -173 1.63 46 0.018 5 0.881 -169 190 0.872 -174 1.52 44 0.017 14 0.894 -169 200 0.873 -175 1.41 43 0.017 25 0.888 -171 210 0.877 -176 1.28 42 0.018 36 0.877 -171 220 0.880 -176 1.18 41 0.019 46 0.868 -171 230 0.881 -177 1.15 38 0.024 51 0.926 -173 240 0.877 -178 1.09 35 0.031 56 0.893 -174 250 0.857 -180 1.04 33 0.049 55 0.903 -173 260 0.758 -178 0.95 31 0.090 24 0.903 -172 270 0.862 -171 0.87 31 0.056 -33 0.933 -173 280 0.902 -174 0.85 32 0.027 -39 0.949 -174 290 0.913 -176 0.77 30 0.017 -28 0.891 -175 300 0.919 -177 0.72 30 0.012 -8 0.894 -175 310 0.922 -178 0.71 28 0.012 11 0.913 -175 320 0.925 -178 0.67 26 0.012 28 0.896 -175 330 0.927 -179 0.64 24 0.012 40 0.929 -176 340 0.929 -179 0.62 24 0.013 46 0.925 -179 350 0.931 -180 0.58 24 0.015 52 0.942 -174 360 0.934 180 0.55 24 0.017 55 0.944 -176 370 0.937 179 0.52 23 0.019 61 0.944 -176 380 0.940 179 0.49 21 0.020 68 0.919 -175 390 0.941 178 0.45 22 0.020 69 0.938 -177 400 0.942 178 0.46 18 0.021 73 0.920 -173 410 0.941 177 0.45 19 0.023 67 0.961 -178 420 0.943 177 0.44 18 0.026 67 0.945 -178 430 0.945 176 0.41 16 0.029 70 0.959 -179 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA |S22| MRF177 5.2-149 AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA Table 1. Common Source S-Parameters (VDS = 24 V, ID = 0.4 A) (continued) S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 440 0.947 176 0.38 16 0.029 75 0.962 -179 450 0.949 176 0.38 19 0.030 78 0.984 -178 460 0.952 175 0.36 17 0.029 72 0.987 178 470 0.953 175 0.34 18 0.030 70 0.976 179 480 0.952 174 0.34 14 0.035 69 0.968 179 490 0.952 174 0.34 14 0.039 72 0.987 178 500 0.952 174 0.32 13 0.040 76 1.002 179 600 0.938 170 0.22 9 0.047 117 1.013 172 700 0.962 166 0.19 13 0.060 73 0.993 171 800 0.953 162 0.17 18 0.097 68 0.981 171 900 0.953 159 0.14 21 0.097 65 0.949 166 1000 0.952 156 0.14 27 0.110 68 0.982 163 Table 2. Common Source S-Parameters (VDS = 28 V, ID = 0.435 A) S11 S21 S12 S22 f MHz |S11| |S21| |S12| 30 0.803 -153 13.50 89 0.028 3 0.746 -157 40 0.742 -160 9.90 90 0.026 9 0.686 -164 50 0.752 -163 7.48 85 0.025 8 0.692 -168 60 0.773 -163 6.62 80 0.026 4 0.739 -167 70 0.794 -164 5.91 74 0.026 1 0.761 -167 80 0.803 -166 5.04 70 0.025 1 0.763 -167 90 0.812 -167 4.32 68 0.024 1 0.783 -167 100 0.819 -168 3.81 64 0.022 1 0.798 -168 110 0.818 -169 3.44 62 0.022 3 0.797 -168 120 0.817 -170 3.03 61 0.021 9 0.779 -168 130 0.823 -171 2.68 59 0.020 15 0.784 -170 140 0.830 -171 2.49 57 0.021 21 0.793 -169 150 0.838 -171 2.30 53 0.027 27 0.792 -169 160 0.864 -172 2.16 52 0.030 -5 0.816 -167 170 0.865 -173 1.95 49 0.019 -2 0.827 -166 180 0.870 -173 1.79 46 0.017 8 0.869 -168 190 0.873 -174 1.67 44 0.016 18 0.882 -168 200 0.874 -175 1.55 43 0.017 27 0.878 -171 210 0.878 -176 1.40 42 0.017 37 0.866 -171 220 0.881 -176 1.29 41 0.019 47 0.858 -171 230 0.881 -177 1.25 38 0.025 53 0.918 -172 240 0.877 -178 1.20 35 0.031 59 0.882 -173 250 0.856 -180 1.13 33 0.048 57 0.893 -173 260 0.760 -178 1.03 31 0.088 24 0.899 -172 270 0.864 -171 0.96 31 0.056 -33 0.931 -172 280 0.903 -174 0.93 32 0.027 -38 0.946 -173 290 0.914 -176 0.85 30 0.015 -25 0.885 -174 MRF177 5.2-150 |S22| MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA Table 2. Common Source S-Parameters (VDS = 28 V, ID = 0.435 A) (continued) S11 f MHz |S11| 300 0.919 310 0.922 320 S21 S12 S22 |S21| |S12| |S22| -177 0.79 30 0.010 -7 0.881 -175 -178 0.78 28 0.009 6 0.903 -175 0.925 -178 0.75 26 0.010 18 0.900 -175 330 0.927 -179 0.70 24 0.012 31 0.925 -176 340 0.929 -180 0.68 24 0.014 45 0.920 -178 350 0.931 180 0.63 25 0.015 63 0.932 -173 360 0.934 179 0.61 23 0.014 70 0.931 -176 370 0.936 179 0.57 23 0.013 68 0.929 -176 380 0.939 178 0.53 21 0.015 61 0.909 -176 390 0.941 178 0.50 22 0.018 61 0.940 -178 400 0.941 178 0.50 18 0.022 74 0.917 -173 410 0.940 177 0.49 19 0.024 80 0.955 -178 420 0.941 177 0.48 18 0.022 83 0.942 -178 430 0.943 176 0.46 16 0.020 77 0.957 -179 440 0.946 176 0.42 16 0.022 69 0.960 -178 450 0.948 175 0.41 18 0.029 71 0.982 -177 460 0.951 175 0.39 17 0.032 76 0.983 178 470 0.951 175 0.37 17 0.031 88 0.968 179 480 0.950 174 0.37 13 0.027 93 0.965 179 490 0.950 174 0.37 13 0.025 81 0.994 179 500 0.950 173 0.36 12 0.031 69 1.012 180 600 0.936 170 0.24 7 0.063 127 1.005 171 700 0.960 166 0.20 11 0.064 72 0.989 171 800 0.953 162 0.17 15 0.092 66 1.017 169 900 0.954 159 0.15 19 0.092 65 0.952 167 1000 0.952 156 0.15 24 0.082 56 0.988 162 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF177 5.2-151 MOTOROLA MRF181SR1 MRF181ZR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 12.5 and 28 volt mobile, portable and base station equipment. * Guaranteed Performance @ 945 MHz, 28 Volts Output Power = 7.5 Watts Power Gain = 15.5 dB Efficiency = 30% D * Capable of Handling 5:1 VSWR @ 28 Vdc, 945 MHz, 7.5 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * S-Parameter Characterization at High Bias Levels G * Suitable for 12.5 Volt Application * Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel. 1.0 GHz, 7.5 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 458B-02, STYLE 1 (MRF181SR1) CASE 458C-02, STYLE 1 (MRF181ZR1) S MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS 20 Vdc Drain Current -- Continuous ID 2.0 Adc Total Device Dissipation @ TC = 70C Derate above 70C PD 36 0.278 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Symbol Max Unit RJC 5.42 C/W Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MRF181SR1 MRF181ZR1 5.2-152 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA LAST ORDER 31JUL04 The RF MOSFET Line LAST SHIP 31JAN05 SEMICONDUCTOR TECHNICAL DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) IDSS1 -- -- 1.0 Adc Zero Gate Voltage Drain Current (VDS = 65 Vdc, VGS = 0) IDSS2 -- -- 1.0 Adc Gate-Source Leakage Current (VGS = 20 Vdc, VDS = 0) IGSS -- -- 1.0 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 55 Adc) VGS(th) 2.0 3.6 4.0 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 0.5 Adc) VDS(on) 0.3 0.66 0.8 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 170 mAdc) VGS(q) 3.5 -- 5.5 Vdc Input Capacitance (VDS = 28 Vdc, VGS = 0, f = 1.0 MHz) Ciss -- 13 -- pF Output Capacitance (VDS = 28 Vdc, VGS = 0, f = 1.0 MHz) Coss -- 6.6 -- pF Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1.0 MHz) Crss -- 0.69 -- pF Common-Source Power Gain (VDD = 28 Vdc, Pout = 7.5 W PEP, IDQ = 170 mA, f1 = 945 MHz, f2 = 945.1 MHz, Min 15.5 dB) Gps 15.5 17 -- dB Drain Efficiency (VDD = 28 Vdc, Pout = 7.5 W PEP, IDQ = 170 mA, f1 = 945 MHz, f2 = 945.1 MHz) 30 32.5 -- % Input Return Loss (VDD = 28 Vdc, Pout = 7.5 W PEP, IDQ = 170 mA, f1 = 945 MHz, f2 = 945.1 MHz) IRL -- -12.7 -9 dB Intermodulation Distortion (VDD = 28 Vdc, Pout = 7.5 W PEP, IDQ = 170 mA, f1 = 945 MHz, f2 = 945.1 MHz) IMD -- -30 -28.5 dBc Output Mismatch Stress (VDD = 28 Vdc, Pout = 7.5 W CW, IDQ = 170 mA, f1 = 945 MHz, Load VSWR = 5:1, All Phase Angles) Drain-Source Breakdown Voltage (VGS = 0, ID = 50 Adc) LIFETIME BUY ON CHARACTERISTICS DYNAMIC CHARACTERISTICS LAST SHIP 31JAN05 OFF CHARACTERISTICS MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA No Degradation In Output Power MRF181SR1 MRF181ZR1 5.2-153 LAST ORDER 31JUL04 FUNCTIONAL TESTS (In Motorola Test Circuit. See Figure 1.) R4 R1 B1 + R2 C6 C7 C8 + C9 R3 TL5 VDD + C11 C12 C13 C14 C10 DUT RF INPUT C5 C1 TL3 TL2 TL1 TL4 RF OUTPUT C4 C2 C7 C8, C13 C9, C14 Short RF Bead, Fair Rite-2743019447 18 pF Chip Capacitor, ATC 100B180CCA500X 0.8-8.0 pF Variable Capacitor, Johansen Gigatrim 0.4-2.5 pF Variable Capacitor, Johansen Gigatrim 100 pF Chip Capacitor, ATC 100A101CCA150X 10 F, 50 Vdc Electrolytic Capacitor, Panosonic ECEV1HV100R 43 pF Chip Capacitor, ATC 100B430CCA500X 1000 pF Chip Capacitor, ATC 100B102CCA500X 0.1 F 50 Vdc Ceramic, Kemet CDR33BX104AKWS MRF181SR1 MRF181ZR1 5.2-154 C10 C11 N1, N2 R1 R2 R3 R4 TL1-TL5 Ckt Board 30 pF Chip Capacitor, ATC 100B390CCA500X 250 F, 50 Vdc Electrolytic Capacitor, Mallory TC50025 Type N Connector 1.2 k, 1/4 W Resistor 47 k, 1/4 W Resistor 10 k, 1/4 W Chip Resistor 4.0 x 39 , 1/8 W Chip Resistor Microstrip Line 1/32 Glass Teflon, r = 2.55, Arlon-GX-0300-55-22 Figure 1. MRF181 Test Circuit Schematic LAST ORDER 31JUL04 LIFETIME BUY B1 C1 C2, C3 C4 C5 C6, C12 C3 LAST SHIP 31JAN05 VGG MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 5th - 50 7th - 60 1 0 2 3 4 Pout, OUTPUT POWER (WATTS) PEP 5 6 IDQ = 25 mA - 30 - 35 75 mA - 40 150 mA - 45 250 mA - 55 0.1 Figure 2. Intermodulation Distortion Products versus Output Power 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 Figure 3. Intermodulation Distortion versus Output Power 22 18 16 20 I = 250 mA DQ 150 mA 18 75 mA 16 25 mA 14 VDD = 28 Vdc f = 945 MHz 12 0.1 14 Gps 12 17 10 8 16 Pout VDS = 28 Vdc IDQ = 75 mA f = 945 MHz 15 6 4 2 0 1 10 Pout, OUTPUT POWER (WATTS) 0 100 Figure 4. Power Gain versus Output Power 0.1 0.2 0.3 0.4 Pin, INPUT POWER (WATTS) 14 0.6 0.5 Figure 5. Output Power versus Input Power 12 6 Pin = 200 mW 10 8 100 mW 6 4 50 mW 2 0 VDD = 28 Vdc f1 = 945 MHz f2 = 945.1 MHz - 50 Gps , POWER GAIN (dB) -70 - 25 Pout , OUTPUT POWER (WATTS) Gps , POWER GAIN (dB) LIFETIME BUY VDD = 28 Vdc f1 = 945 MHz f2 = 945.1 MHz IDQ = 75 mA - 20 12 14 16 20 24 22 26 VDD, SUPPLY VOLTAGE (VOLTS) 18 IDQ = 75 mA f = 945 MHz 32 30 28 5 4 TYPICAL DEVICE SHOWN 3 2 VDS = 28 Vdc Pin = 75 mW f = 945 MHz 1 0 0 Figure 6. Output Power versus Supply Voltage MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 0.5 1 2 3.5 1.5 2.5 3 4 VGS, GATE-SOURCE VOLTAGE (VOLTS) 4.5 5 Figure 7. Output Power versus Gate Voltage MRF181SR1 MRF181ZR1 5.2-155 LAST SHIP 31JAN05 - 40 -15 LAST ORDER 31JUL04 3rd Order - 30 - 80 P out , OUTPUT POWER (WATTS) IMD, INTERMODULATION DISTORTION (dBc) - 20 P out , OUTPUT POWER (WATTS) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS TYPICAL CHARACTERISTICS 1000 200 10 mW VDS = 28 Vdc 0 820 840 880 860 900 f, FREQUENCY (MHz) 920 960 940 0 Figure 8. Output Power versus Frequency 2 4 3 5 VGS, GATE VOLTAGE (VOLTS) 1 6 7 Figure 9. Drain Current versus Gate Voltage 2 20 1.8 15 Ciss 10 Coss VGS = 0 Vdc f = 1.0 MHz 5 1.6 1.4 1.2 1 0.8 0.6 0.4 TJ = 150C TF = 70C 0.2 Crss 0 0 0 5 15 25 35 40 10 20 30 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 45 0 50 Figure 10. Capacitance versus Voltage 5 15 25 10 20 VDS, DRAIN VOLTAGE (Vdc) 30 2 18 1.8 17.5 50 Gps 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0 0 5 45 17 16.5 16 15 14.5 15 25 10 20 VDS, DRAIN VOLTAGE (Vdc) 30 Figure 12. DC Safe Operating Area MRF181SR1 MRF181ZR1 5.2-156 35 40 15.5 VSWR TJ = 175C TF = 70C 0.2 35 Figure 11. DC Safe Operating Area Gps , POWER GAIN (dB) C, CAPACITANCE (pF) LIFETIME BUY 0 800 400 14 880 900 920 940 f, FREQUENCY (MHz) 35 VDD = 28 Vdc IDQ = 75 mA Pout = 4.0 W (CW) 30 980 960 Figure 13. Performance in Broadband Circuit MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA LAST ORDER 31JUL04 VDD = 28 Vdc IDQ = 75 mA SINGLE TONE 2 2.5 , EFFICIENCY (%) 50 mW 3 TYPICAL DEVICE SHOWN 600 1.5 2.0 INPUT VSWR 4 800 1.0 5 1 I D, DRAIN CURRENT (AMPS) I D, DRAIN CURRENT (mA) Pin = 100 mW 6 I D, DRAIN CURRENT (AMPS) P out , OUTPUT POWER (WATTS) 7 LAST SHIP 31JAN05 1200 8 TYPICAL CHARACTERISTICS P out , OUTPUT POWER (dBm) 50 40 Fundamental 30 20 10 0 3rd Order -10 - 20 - 30 VDS = 26 Vdc ID = 500 mA f1 = 945 MHz f2 = 945.1 MHz - 40 5 15 10 20 Pin, INPUT POWER (dBm) 25 30 Figure 14. Class A Third Order Intercept Point VGATE VDRAIN R1 B1 C12 R4 C13 C6 C9 R2 C8 C10 C14 C11 C7 R3 TL5 C1 TL4 C5 TL3 TL2 TL1 C4 C2 C3 MRF181 Figure 15. Component Parts Layout MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF181SR1 MRF181ZR1 5.2-157 LAST ORDER 31JUL04 LIFETIME BUY 0 LAST SHIP 31JAN05 60 4.0 3.0 950 900 1000 MHz Zo = 10 900 Zin 950 LIFETIME BUY 1000 MHz Ser VDD = 28 Vdc, IDQ = 170 mA, Pout = 7.5 W (PEP) f MHz Zin Ohms ZOL* Ohms 800 2.15 - j2.2 12.45 - j7.0 850 2.11 - j3.5 12.65 - j8.5 900 2.14 - j4.0 12.95 - j10.0 950 2.20 - j5.0 13.52 - j11.5 1000 2.35 - j5.8 14.11 - j13.7 Zin = Complex conjugate of source impedance. ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency and efficiency. Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability. Input Matching Network Output Matching Network Device Under Test Z in Z * OL Figure 16. Series Equivalent Input and Output Impedance MRF181SR1 MRF181ZR1 5.2-158 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA LAST SHIP 31JAN05 850 850 LAST ORDER 31JUL04 Zout 1.8 2.0 1.6 1.4 1.2 0.9 1.0 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 800 800 Table 1. Common Emitter S-Parameters (VDS = 26 Vdc) S21 S12 S22 |S11| 6 |S21| 6 |S12| 6 |S22| 6 10 0.944 -10 31.66 174 0.004 84 0.772 -7 20 0.940 -20 31.23 168 0.008 78 0.765 -14 30 0.934 -30 30.54 162 0.011 73 0.752 -21 40 0.927 -39 29.66 156 0.015 67 0.736 -28 50 0.918 -48 28.62 151 0.018 62 0.718 -34 100 0.873 -83 22.81 129 0.028 41 0.620 -60 150 0.843 -106 17.94 114 0.033 28 0.549 -78 200 0.827 -121 14.44 103 0.035 18 0.509 -90 250 0.820 -131 11.94 95 0.036 11 0.490 -99 300 0.817 -139 10.09 88 0.036 6 0.484 -105 350 0.817 -145 8.69 82 0.036 1 0.487 -111 400 0.820 -149 7.59 77 0.035 -3 0.496 -115 450 0.823 -153 6.71 72 0.034 -7 0.508 -118 500 0.828 -156 5.99 68 0.033 -10 0.523 -122 550 0.833 -159 5.39 64 0.032 -12 0.538 -125 600 0.839 -161 4.88 60 0.031 -15 0.555 -127 650 0.845 -163 4.44 56 0.029 -17 0.572 -130 700 0.851 -165 4.06 52 0.028 -19 0.589 -132 750 0.857 -167 3.73 49 0.026 -20 0.606 -134 800 0.864 -169 3.44 45 0.025 -22 0.622 -137 850 0.870 -171 3.18 42 0.023 -23 0.638 -139 900 0.876 -172 2.95 39 0.022 -23 0.654 -141 950 0.882 -174 2.74 36 0.020 -24 0.669 -143 1000 0.888 -175 2.55 33 0.018 -24 0.683 -144 1050 0.893 -176 2.38 30 0.017 -23 0.697 -146 1100 0.899 -178 2.23 28 0.015 -22 0.710 -148 1150 0.904 -179 2.09 25 0.014 -20 0.722 -150 1200 0.909 180 1.96 22 0.012 -16 0.734 -151 1250 0.914 179 1.85 20 0.011 -12 0.745 -153 1300 0.918 177 1.74 17 0.010 -6 0.756 -155 1350 0.922 176 1.64 15 0.009 1 0.766 -156 1400 0.927 175 1.55 13 0.009 10 0.775 -158 1450 0.931 174 1.47 10 0.008 20 0.784 -159 1500 0.934 173 1.39 8 0.008 30 0.793 -161 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF181SR1 MRF181ZR1 5.2-159 LAST SHIP 31JAN05 S11 f MHz LAST ORDER 31JUL04 LIFETIME BUY ID = 500 mA MOTOROLA SEMICONDUCTOR TECHNICAL DATA RF Power MRF182 Field Effect Transistors MRF182S, R1 N-Channel Enhancement-Mode Lateral MOSFETs * High Gain, Rugged Device * Broadband Performance from HF to 1 GHz 30 W, 1.0 GHz LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs * Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances D CASE 360B-03, STYLE 1 (MRF182) G CASE 360C-03, STYLE 1 (MRF182S) MAXIMUM RATINGS S Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS 20 Vdc Total Device Dissipation @ TC = 70C Derate above 70C PD 74 0.57 W W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Symbol Max Unit RJC 1.75 C/W Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 - - Vdc Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) IDSS - - 1 Adc Gate-Source Leakage Current (VGS = 20 V, VDS = 0) IGSS - - 1 Adc Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 1.0 mAdc) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 9 MRF182 MRF182S, R1 5.2-160 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA LAST ORDER 31JUL04 LIFETIME BUY * MRF182S Available in Tape and Reel by Adding R1 Suffix to Part Number. MRF182SR1 = 500 Units per 24 mm, 13 inch Reel. LAST SHIP 31JAN05 The RF MOSFET Line ELECTRICAL CHARACTERISTICS - continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Gate Threshold Voltage (VDS = 10 V, ID = 100 A) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 28 V, ID = 50 mA) VGS(Q) 3 4 5 Vdc Drain-Source On-Voltage (VGS = 10 V, ID = 3 A) VDS(on) - 0.9 1.2 Vdc Forward Transconductance (VDS = 10 V, ID = 3 A) gfs 1.6 1.8 - S Input Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Ciss - 56 - pF Output Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Coss - 28 - pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Crss - 2.5 - pF Common Source Power Gain (VDD = 28 Vdc, Pout = 30 W, IDQ = 50 mA, f = 945 MHz) Gps 11 14 - dB Drain Efficiency (VDD = 28 Vdc, Pout = 30 W, IDQ = 50 mA, f = 945 MHz) 50 58 - % FUNCTIONAL CHARACTERISTICS Load Mismatch (VDD = 28 Vdc, Pout = 30 W, IDQ = 50 mA, f = 945 MHz, Load VSWR 5:1 at All Phase Angles) No Degradation in Output Power Series Equivalent Input Impedance (VDD = 28 Vdc, Pout = 30 W, IDQ = 50 mA, f = 960 MHz) Zin - 0.81 + j1.6 - ohms Series Equivalent Output Impedance (VDD = 28 Vdc, Pout = 30 W, IDQ = 50 mA, f = 960 MHz) Zout - 2.15 - j1.7 - ohms MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF182 MRF182S, R1 5.2-161 LAST ORDER 31JUL04 LIFETIME BUY DYNAMIC CHARACTERISTICS LAST SHIP 31JAN05 ON CHARACTERISTICS R1 C6 R2 R4 C7 C11 C8 C5 C9 R3 C12 VDD B1 L1 C2 C13 C10 DUT RF INPUT C1 C4 TL2 TL3 TL1 B1 C1 C2, C3, C6, C9 C4 C5, C12 C7, C10 C8, C11 C13 C14 MRF182 MRF182S, R1 5.2-162 Short RF Bead Fair Rite-274301944 18 pF Chip Capacitor 43 pF Chip Capacitor 100 pF Chip Capacitor 10 F, 50 Vdc Electrolytic Capacitor 1000 pF Chip Capacitor 0.1 F, 50 Vdc Chip Capacitor 250 F, 50 Vdc Electrolytic Capacitor 0.6-4.5 pF Variable Capacitor C14 L1 R1 R2 R3 R4 TL1-TL4 Ckt Board 5 Turns, 20 AWG, IDIA 0.126 10 k, 1/4 W Resistor 13 k, 1/4 W Resistor 1.0 k, 1/4 W Chip Resistor 4 x 39 , 1/8 W Chip Resistor Microstrip Line See Photomaster 1/32 Glass Teflon, r = 2.55 ARLON-GX-0300-55-22 Figure 1. MRF182 Schematic LAST ORDER 31JUL04 LIFETIME BUY C3 TL4 RF OUTPUT LAST SHIP 31JAN05 VGG MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA TYPICAL CHARACTERISTICS 14 20 15 10 8 6 4 VDS = 28 Vdc IDQ = 50 mA f = 1 GHz 2 5 0 10 0 0.5 1 1.5 2 0 2.5 0 10 5 Figure 2. Output Power versus Input Power at 1 GHz 30 VDS = 28 Vdc IDQ = 50 mA f = 1 GHz 40 30 20 10 0 0 5 10 15 20 25 35 30 35 40 26 28 Pin = 1.23 W 20 0.75 W 15 10 0.35 W 5 0 12 40 16 14 18 20 24 22 VDS, SUPPLY VOLTAGE (VOLTS) Figure 5. Output Power versus Supply Voltage 20 100 Ciss VDS = 13.5 Vdc IDQ = 50 mA f = 1 GHz C, CAPACITANCE (pF) Pout , OUTPUT POWER (WATTS) 25 Figure 4. Drain Efficiency versus Output Power at 1 GHz 16 30 25 f = 1 GHz IDQ = 50 mA Pout, OUTPUT POWER (WATTS) 18 20 Figure 3. Power Gain versus Output Power at 1 GHz 60 50 15 Pout, OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) d , DRAIN EFFICIENCY (%) LIFETIME BUY Pin, INPUT POWER (WATTS) 14 12 10 8 6 Coss 10 Crss 4 2 0 0 0.5 1 1.5 2 2.5 3 1 0 Pin, INPUT POWER (WATTS) Figure 6. Output Power versus Input Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 5 10 15 20 25 30 VDS, DRAIN SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance versus Drain Source Voltage MRF182 MRF182S, R1 5.2-163 LAST ORDER 31JUL04 25 12 LAST SHIP 31JAN05 16 VDS = 28 Vdc 35 IDQ = 50 mA f = 1 GHz 30 Gps , POWER GAIN (dB) Pout , OUTPUT POWER (WATTS) 40 Table 1. Typical Common Source S-Parameters (VDS = 13.5 V) ID = 1.0 A S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 20 0.933 -131 40.81 112 0.021 22 0.664 -138 30 0.922 -148 29.31 104 0.022 15 0.700 -151 40 0.892 -156 22.19 99 0.022 10 0.718 -158 50 0.877 -161 17.91 95 0.023 7 0.725 -162 60 0.870 -164 14.67 92 0.023 4 0.732 -164 70 0.863 -166 12.57 90 0.022 2 0.735 -166 80 0.860 -168 11.00 89 0.022 1 0.738 -168 90 0.860 -169 9.79 87 0.022 0 0.740 -169 100 0.859 -170 8.79 86 0.022 -1 0.741 -169 150 0.859 -173 5.78 80 0.022 -7 0.750 -172 200 0.862 -175 4.29 74 0.022 -11 0.759 -172 250 0.868 -176 3.38 69 0.021 -14 0.770 -173 300 0.880 -177 2.77 65 0.020 -17 0.780 -173 350 0.877 -177 2.32 61 0.020 -19 0.793 -173 400 0.882 -178 1.98 56 0.019 -22 0.808 -173 450 0.892 -179 1.72 52 0.018 -24 0.816 -173 500 0.899 -180 1.51 49 0.017 -26 0.828 -174 550 0.898 180 1.33 45 0.017 -27 0.838 -174 600 0.907 179 1.19 42 0.016 -28 0.849 -175 650 0.914 179 1.07 38 0.015 -28 0.859 -175 700 0.916 177 0.95 35 0.014 -25 0.867 -176 750 0.920 177 0.88 34 0.015 -26 0.874 -176 800 0.924 176 0.80 30 0.015 -27 0.884 -177 850 0.929 175 0.74 27 0.015 -33 0.891 -178 900 0.929 174 0.68 25 0.013 -38 0.897 -178 950 0.933 173 0.63 22 0.011 -39 0.905 -179 1000 0.934 173 0.58 20 0.010 -37 0.912 -180 1050 0.930 172 0.54 17 0.009 -33 0.918 180 1100 0.938 171 0.52 15 0.009 -29 0.924 179 1150 0.933 170 0.48 13 0.008 -28 0.929 178 1200 0.930 169 0.45 10 0.008 -25 0.930 177 1250 0.939 168 0.42 8 0.007 -23 0.935 177 1300 0.936 168 0.40 6 0.007 -21 0.934 176 1350 0.933 167 0.38 4 0.006 -19 0.936 175 1400 0.937 166 0.35 2 0.005 -14 0.939 174 1450 0.937 165 0.33 0 0.005 -5 0.934 174 1500 0.927 164 0.32 -2 0.004 0 0.930 173 MRF182 MRF182S, R1 5.2-164 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA LAST SHIP 31JAN05 LAST ORDER 31JUL04 LIFETIME BUY AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA Table 2. Typical Common Emitter S-Parameters (VDS = 28 V) ID = 1.0 A S12 S22 f MHz |S11| |S21| |S12| |S22| 20 0.964 -99 54.39 129 0.014 39 0.429 -108 30 0.949 -121 43.46 118 0.017 28 0.478 -125 40 0.909 -134 34.35 109 0.018 20 0.520 -137 50 0.884 -142 28.27 103 0.018 15 0.540 -144 60 0.875 -148 23.38 98 0.019 11 0.553 -149 70 0.862 -152 20.10 95 0.019 8 0.562 -152 80 0.861 -156 17.64 92 0.019 5 0.569 -154 90 0.858 -158 15.72 90 0.019 3 0.575 -156 100 0.858 -160 14.11 88 0.019 1 0.580 -157 150 0.856 -166 9.26 79 0.018 -7 0.606 -160 200 0.862 -169 6.80 71 0.018 -12 0.633 -161 250 0.871 -171 5.29 65 0.017 -16 0.661 -161 300 0.882 -173 4.27 59 0.016 -21 0.690 -162 350 0.883 -174 3.52 54 0.015 -23 0.718 -162 400 0.895 -175 2.97 49 0.014 -26 0.747 -163 450 0.904 -176 2.54 45 0.013 -28 0.767 -164 500 0.911 -177 2.20 41 0.012 -30 0.789 -165 550 0.911 -178 1.90 37 0.011 -30 0.807 -166 600 0.923 -179 1.69 33 0.010 -30 0.825 -167 650 0.929 -180 1.50 30 0.009 -29 0.841 -168 700 0.929 179 1.32 26 0.009 -22 0.855 -169 750 0.933 178 1.21 24 0.010 -22 0.865 -170 800 0.938 177 1.09 21 0.009 -20 0.877 -171 850 0.942 176 1.00 18 0.010 -31 0.886 -172 900 0.942 175 0.92 16 0.008 -37 0.894 -173 950 0.947 174 0.84 13 0.006 -38 0.904 -174 1000 0.946 173 0.77 11 0.005 -28 0.912 -175 1050 0.943 172 0.72 8 0.005 -18 0.919 -176 1100 0.948 171 0.67 6 0.004 -9 0.926 -177 1150 0.945 171 0.62 4 0.005 0 0.932 -178 1200 0.939 170 0.59 1 0.004 3 0.934 -179 1250 0.949 169 0.54 0 0.005 12 0.940 -180 1300 0.947 168 0.51 -3 0.005 18 0.939 180 1350 0.944 167 0.48 -4 0.005 22 0.941 179 1400 0.945 166 0.44 -7 0.004 34 0.943 178 1450 0.944 165 0.42 -9 0.005 45 0.940 177 1500 0.933 164 0.40 -10 0.005 55 0.936 176 LIFETIME BUY AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF182 MRF182S, R1 5.2-165 LAST SHIP 31JAN05 S21 LAST ORDER 31JUL04 S11 MOTOROLA The RF MOSFET Line MRF183 MRF183S MRF183SR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes them ideal for large-signal, common source amplifier applications in 28 volt base station equipment. D * Characterized with Series Equivalent Large-Signal Impedance Parameters * S-Parameter Characterization at High Bias Levels CASE 360B-03, STYLE 1 (MRF183) * Excellent Thermal Stability * 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 28 Vdc, 945 MHz, 45 Watts CW G * MRF183S Available in Tape and Reel by Adding R1 Suffix to Part Number. MRF183SR1 = 500 Units per 24 mm, 13 inch Reel. CASE 360C-03, STYLE 1 (MRF183S) S MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Drain-Gate Voltage (RGS = 1 Meg Ohm) VDGR 65 Vdc VGS 20 Vdc Drain Current - Continuous ID 5 Adc Total Device Dissipation @ TC = 70C Derate above 70C PD 86 0.67 W W/C Storage Temperature Range Tstg - 65 to +200 C TJ 200 C Symbol Max Unit RJC 1.5 C/W Gate-Source Voltage Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 12 MRF183 MRF183S MRF183SR1 5.2-166 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA LAST ORDER 31JUL04 LIFETIME BUY * Guaranteed Performance at 945 MHz, 28 Volts Output Power -- 45 Watts PEP Power Gain -- 11.5 dB Efficiency -- 33% IMD -- - 28 dBc 1.0 GHz, 45 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs LAST SHIP 31JAN05 SEMICONDUCTOR TECHNICAL DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit BVDSS 65 - - Vdc Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) IDSS - - 1 Adc Gate-Source Leakage Current (VGS = 20 V, VDS = 0) IGSS - - 1 Adc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 250 mAdc) VGS(Q) 3 - 5 Vdc Drain-Source On-Voltage (VGS = 10 V, ID = 3 A) VDS(on) - 0.7 - Vdc gfs - 2 - S Input Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Ciss - 82 - pF Output Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Coss - 38 - pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Crss - 4.5 - pF Gps 11.5 13.5 - dB 33 38 - % 3rd Order Intermodulation Distortion IMD - -32 -28 dBc Input Return Loss IRL 9 14 - dB 13 - dB LIFETIME BUY ON CHARACTERISTICS Forward Transconductance (VDS = 10 Vdc, ID = 5 Adc) DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture) (VDD = 28 Vdc, Pout = 45 Watts PEP, f1 = 945.0, f2 = 945.1 MHz, IDQ = 250 mA) Two-Tone Common Source Amplifier Power Gain Two-Tone Drain Efficiency (VDD = 28 Vdc, Pout = 45 Watts PEP, f1 = 930.0, f2 = 930.1 MHz, and f1 = 960.0, f2 = 960.1 MHz, IDQ = 250 mA) Two-Tone Common Source Amplifier Power Gain Gps - - 35 - % 3rd Order Intermodulation Distortion IMD - -32 - dBc Input Return Loss IRL - 12 - dB Two-Tone Drain Efficiency Output Mismatch Stress (VDD = 28 Vdc, Pout = 45 Watts CW, IDQ = 250 mA, f = 945 MHz, VSWR 5:1 at All Phase Angles) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA No Degradation in Output Power Before and After Test MRF183 MRF183S MRF183SR1 5.2-167 LAST ORDER 31JUL04 Drain-Source Breakdown Voltage (VGS = 0, ID = 50 mAdc) LAST SHIP 31JAN05 OFF CHARACTERISTICS R1 B1 R2 + C1 B2 C2 R3 C3 C4 C13 L1 C15 C8 C5 Z2 Z3 C6 B1 B2 C1 C2, C14 C3 C4, C13 C5, C12 C6, C11 C7, C8 C9, C10 C15 C16 L1, L2 R1 R2 Z4 Z5 C9 Z6 MRF183 MRF183S MRF183SR1 5.2-168 Z7 C7 Short Ferrite Bead Long Ferrite Bead 10 F, 50 V Electrolytic Capacitor 0.1 F Chip Capacitor 1000 pF Chip Capacitor 47 pf Chip Capacitor 47 pF Chip Capacitor 0.8-8.0 pF Trim Capacitor 10 pF Chip Capacitor 10 pF Chip Capacitor 100 pF Chip Capacitor 250 F, 50 V Electrolytic Capacitor 5 Turns, 24 AWG, ID 0.059 120 , 1/4 W Carbon 18 k, 1/4 W Carbon VDD C16 Z8 C10 R3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Board RF OUTPUT C12 Z9 Z10 Z11 C11 4.7 M, 1/4 W Carbon T-Line, 0.200 x 0.080 T-Line, 0.570 x 0.120 T-Line, 0.610 x 0.320 T-Line, 0.160 x 0.320 x 0.620 Tapered Line T-Line, 0.650 x 0.620 T-Line, 0.020 x 0.620 T-Line, 0.270 x 0.320 T-Line, 0.130 x 0.320 T-Line, 0.370 x 0.080 T-Line, 1.050 x 0.080 T-Line, 0.290 x 0.080 0.030 Glass Teflon, r = 2.55 ARLON-GX-0300-55-22 Figure 1. MRF183S Two Tone Test Circuit Schematic LAST ORDER 31JUL04 Z1 + L2 DUT RF INPUT LIFETIME BUY C14 LAST SHIP 31JAN05 VGG MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA - 40 5th - 45 - 50 - 55 7th - 60 - 65 0 10 5 20 30 40 15 25 35 Pout, OUTPUT POWER (WATTS PEP) 45 50 IDQ = 75 mA - 30 - 35 150 mA - 40 - 45 250 mA - 50 - 55 0.1 1 10 Pout, OUTPUT POWER (WATTS PEP) IDQ = 450 mA VDD = 28 Vdc f = 945 MHz 285 mA 15 14.5 150 mA 14 13.5 Pout , OUTPUT POWER (WATTS) 60 15.5 16 50 15 Gpe 40 14 30 13 Pout 20 12 VDD = 28 Vdc IDQ = 75 mA f = 945 MHz 10 75 mA 13 1 10 Pout, OUTPUT POWER (WATTS) 0 100 0 Figure 4. Power Gain versus Output Power 0.5 1 1.5 3 2 2.5 Pin, INPUT POWER (WATTS) 11 3.5 4 10 Figure 5. Output Power versus Input Power 90 50 Pin = 4.0 W 80 45 70 2.0 W 60 50 40 1.0 W 30 20 VDD = 28 Vdc IDQ = 75 mA f1 = 945 MHz 10 0 100 Figure 3. Intermodulation Distortion versus Output Power 16 P out , OUTPUT POWER (WATTS) VDD = 28 Vdc f1 = 945 MHz f2 = 945.1 MHz 450 mA Figure 2. Intermodulation Distortion Products versus Output Power Gpe , POWER GAIN (dB) LIFETIME BUY - 70 - 25 15 17 19 23 21 25 27 29 VDS, DRAIN VOLTAGE (VOLTS) 31 33 40 35 30 TYPICAL DEVICE SHOWN VGS(th) TYPICAL = 3.13 V 25 20 15 VDD = 28 Vdc Pin = 1.5 W f1 = 945 MHz 10 5 35 0 0 Figure 6. Output Power versus Drain Bias Supply Voltage MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 0.5 1 2 3.5 1.5 2.5 3 VGS, GATE BIAS (VOLTS) 4 4.5 5 Figure 7. Output Power versus Gate Bias Supply Voltage MRF183 MRF183S MRF183SR1 5.2-169 LAST SHIP 31JAN05 - 35 3rd ORDER LAST ORDER 31JUL04 VDD = 28 Vdc IDQ = 250 mA f1 = 945 MHz f2 = 945.1 MHz -20 Gpe , POWER GAIN (dB) - 25 - 30 IMD, INTERMODULATION DISTORTION (dBc) - 20 P out , OUTPUT POWER (WATTS) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS TYPICAL CHARACTERISTICS 3000 2500 30 1.0 W 20 0.5 W VDD = 28 Vdc IDQ = 75 mA SINGLE TONE 10 TYPICAL DEVICE SHOWN 2000 1500 1000 VDS = 28 Vdc 500 0.1 W 0 820 840 860 880 900 920 940 f, FREQUENCY (MHz) 960 980 1000 0 Figure 8. Output Power versus Frequency 1 5 6 Figure 9. Drain Current versus Gate Voltage 120 4.5 Ciss 80 60 40 Coss VGS = 0 Vdc f = 1.0 MHz 20 I D, DRAIN CURRENT (AMPS) 4 100 C, CAPACITANCE (pF) 3 2 4 VGS, GATE VOLTAGE (VOLTS) ID = 3.67 A 3.5 TCASE = 70C 3 2.5 TCASE = 100C 2 1.5 1 0.5 Crss TJ = 175C 0 0 0 5 15 25 35 40 10 20 30 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 45 50 0 Figure 10. Capacitance versus Voltage 5 15 25 10 20 30 VDS, DRAIN VOLTAGE (VOLTS) 35 40 Figure 11. Class A Safe Operating Region 60 P out , OUTPUT POWER (dBm) 50 40 FUNDAMENTAL 30 20 10 0 3rd ORDER -10 VDS = 26 Vdc ID = 1.8 A f1 = 945 MHz f2 = 945.1 MHz - 20 - 30 - 40 10 15 25 20 30 Pin, INPUT POWER (dBm) 35 40 Figure 12. Class A Third Order Intercept Point MRF183 MRF183S MRF183SR1 5.2-170 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA LAST ORDER 31JUL04 Pin = 2.0 W 40 0 800 LIFETIME BUY I D, DRAIN CURRENT (mA) P out , OUTPUT POWER (WATTS) 3500 50 LAST SHIP 31JAN05 4000 60 35 10 -30 -31 9 IMD 8 -32 7 LIFETIME BUY 6 925 TO GATE BIAS FEEDTHRU -33 VSWR 930 935 940 945 950 f, FREQUENCY (MHz) 955 960 LAST SHIP 31JAN05 11 -34 965 Figure 13. Broadband Power Performance of MRF183S C1 C2 R2 R1 B1 C3 C4 IND1 B2 C14 C15 C13 C8 TO DRAIN BIAS FEEDTHRU C16 IND2 C9 C10 C5 C12 C7 C6 C11 MRF183S Figure 14. MRF183S Two Tone Test Circuit Component Parts Layout MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF183 MRF183S MRF183SR1 5.2-171 LAST ORDER 31JUL04 G T, GAIN (dB) 3.00 40 12 2.00 GAIN INPUT VSWR 13 1.00 45 INTERMODULATION DISTORTION (dBc) 14 , EFFICIENCY (%) TYPICAL CHARACTERISTICS LAST SHIP 31JAN05 f = 960 MHz f = 930 MHz ZOL* f = 960 MHz Z0 = 10 VDD = 28 V, IDQ = 250 mA, Pout = 45 W (PEP) Zin f MHz Zin Ohms ZOL* Ohms 930 1.10 + j0.93 2.60 - j0.13 945 1.10 + j0.78 2.70 - j0.28 960 1.10 + j0.60 2.80 - j0.42 = Conjugate of source impedance. ZOL* = Conjugate of the load impedance at a given output power, voltage, and current conditions. Note: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Figure 15. Series Equivalent Input and Output Impedance MRF183 MRF183S MRF183SR1 5.2-172 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA LAST ORDER 31JUL04 LIFETIME BUY f = 930 MHz Zin Table 1. Typical Common Source S-Parameters (VDS = 13.5 V) S12 S22 f MHz |S11| |S21| |S12| |S22| 20 0.954 -157 29.58 100 0.017 11 0.778 -161 30 0.941 -164 19.73 96 0.017 8 0.796 -168 40 0.922 -168 14.84 93 0.017 4 0.804 -170 50 0.907 -171 11.94 91 0.017 3 0.808 -172 60 0.903 -172 9.75 89 0.017 2 0.812 -173 70 0.899 -173 8.34 88 0.017 0 0.814 -174 80 0.898 -174 7.29 86 0.017 -1 0.816 -175 90 0.896 -175 6.49 85 0.017 -2 0.816 -175 100 0.897 -175 5.83 84 0.017 -2 0.817 -175 150 0.895 -177 3.82 79 0.017 -6 0.822 -176 200 0.898 -178 2.84 74 0.016 -9 0.828 -176 250 0.902 -178 2.24 70 0.016 -11 0.835 -176 300 0.908 -179 1.84 66 0.015 -14 0.842 -176 350 0.905 -179 1.55 62 0.015 -16 0.850 -176 400 0.913 -180 1.32 58 0.014 -18 0.861 -176 450 0.920 180 1.15 54 0.014 -18 0.865 -176 500 0.924 179 1.01 51 0.013 -20 0.874 -177 550 0.922 179 0.89 47 0.013 -21 0.881 -177 600 0.931 178 0.80 44 0.012 -21 0.889 -177 650 0.935 178 0.72 41 0.011 -20 0.895 -177 700 0.935 177 0.64 38 0.011 -17 0.901 -178 750 0.937 177 0.59 37 0.012 -18 0.905 -178 800 0.940 176 0.54 33 0.012 -20 0.913 -178 850 0.943 176 0.50 30 0.012 -29 0.919 -179 900 0.945 175 0.46 28 0.010 -33 0.924 -179 950 0.947 174 0.43 26 0.009 -34 0.930 -180 1000 0.947 174 0.40 24 0.008 -29 0.935 180 1050 0.947 173 0.37 21 0.007 -24 0.939 179 1100 0.952 172 0.35 19 0.007 -19 0.944 179 1150 0.949 172 0.32 17 0.007 -17 0.948 178 1200 0.946 171 0.30 14 0.006 -16 0.948 177 1250 0.954 170 0.28 12 0.006 -13 0.953 177 1300 0.952 170 0.27 9 0.006 -12 0.950 176 1350 0.949 169 0.26 9 0.006 -10 0.951 176 1400 0.948 168 0.23 8 0.005 -7 0.953 175 1450 0.948 168 0.22 6 0.004 4 0.948 174 1500 0.940 167 0.21 4 0.004 19 0.944 174 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF183 MRF183S MRF183SR1 5.2-173 LAST SHIP 31JAN05 S21 LAST ORDER 31JUL04 LIFETIME BUY ID = 1.5 A S11 Table 2. Typical Common Source S-Parameters (VDS = 28 V) S12 S22 f MHz |S11| |S21| |S12| |S22| 20 0.968 -132 45.79 113 0.014 24 0.579 -145 30 0.953 -145 31.75 106 0.015 17 0.623 -157 40 0.921 -154 24.33 99 0.015 12 0.648 -161 50 0.904 -159 19.68 95 0.015 7 0.661 -164 60 0.898 -163 16.11 92 0.015 5 0.670 -166 70 0.890 -165 13.79 90 0.015 2 0.677 -167 80 0.886 -167 12.06 87 0.015 1 0.681 -168 90 0.886 -168 10.71 86 0.015 -1 0.684 -169 100 0.887 -169 9.61 84 0.015 -3 0.688 -169 150 0.886 -172 6.26 76 0.015 -9 0.706 -170 200 0.890 -174 4.59 69 0.014 -13 0.724 -170 250 0.898 -175 3.57 64 0.014 -17 0.744 -169 300 0.906 -176 2.88 59 0.013 -19 0.764 -169 350 0.908 -177 2.37 54 0.012 -23 0.785 -169 400 0.915 -178 2.00 49 0.011 -24 0.807 -170 450 0.924 -178 1.71 45 0.010 -25 0.821 -170 500 0.930 -179 1.48 41 0.010 -26 0.838 -171 550 0.928 -180 1.28 37 0.009 -26 0.851 -171 600 0.937 180 1.13 33 0.008 -25 0.865 -172 650 0.944 179 1.00 30 0.007 -22 0.878 -172 700 0.943 178 0.88 27 0.008 -14 0.888 -173 750 0.946 178 0.81 25 0.008 -15 0.895 -173 800 0.949 177 0.73 22 0.009 -17 0.906 -174 850 0.954 177 0.67 20 0.009 -28 0.912 -175 900 0.953 175 0.61 18 0.007 -34 0.919 -175 950 0.957 175 0.56 15 0.005 -32 0.927 -176 1000 0.957 174 0.51 13 0.004 -22 0.934 -177 1050 0.957 174 0.48 10 0.004 -11 0.939 -178 1100 0.962 173 0.45 8 0.004 -2 0.945 -178 1150 0.959 172 0.41 7 0.004 3 0.950 -179 1200 0.955 171 0.39 4 0.004 9 0.950 -180 1250 0.962 170 0.36 2 0.004 13 0.955 180 1300 0.959 170 0.33 0 0.004 17 0.953 179 1350 0.956 169 0.31 -1 0.004 25 0.954 178 1400 0.954 168 0.29 -4 0.004 32 0.957 177 1450 0.955 168 0.28 -6 0.004 46 0.952 177 1500 0.948 167 0.26 -7 0.004 56 0.948 176 MRF183 MRF183S MRF183SR1 5.2-174 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA LAST SHIP 31JAN05 S21 LAST ORDER 31JUL04 LIFETIME BUY ID = 1.5 A S11 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes them ideal for large-signal, common source amplifier applications in 28 volt base station equipment. D * Guaranteed Performance @ 945 MHz, 28 Volts Output Power = 60 Watts Power Gain = 11.5 dB Efficiency = 53% * Characterized with Series Equivalent Large-Signal Impedance Parameters * S-Parameter Characterization at High Bias Levels G * Excellent Thermal Stability * 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 28 Vdc, 945 MHz, 60 Watts CW * MRF184S Available in Tape and Reel by Adding R1 Suffix to Part Number. MRF184SR1 = 500 Units per 24 mm, 13 inch Reel. MRF184S, R1 60 W, 1.0 GHz LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 360B-03, STYLE 1 (MRF184) S CASE 360C-03, STYLE 1 (MRF184S) LAST SHIP 31JAN05 MRF184 Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS 20 Vdc Drain Current -- Continuous ID 7 Adc Total Device Dissipation @ TC = 70C Derate above 70C PD 118 0.9 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Symbol Max Unit RJC 1.1 C/W Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 - - Vdc Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0 V) IDSS - - 1 Adc Gate-Source Leakage Current (VGS = 20 V, VDS = 0 V) IGSS - - 1 Adc OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 V, ID = 1 mAdc) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 7 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF184 MRF184S, R1 5.2-175 LAST ORDER 31JUL04 MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS - continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Gate Threshold Voltage (VDS = 10 V, ID = 200 A) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 28 V, ID = 100 mA) VGS(Q) 3 4 5 Vdc Drain-Source On-Voltage (VGS = 10 V, ID = 3 A) VDS(on) - 0.65 0.8 Vdc Forward Transconductance (VDS = 10 V, ID = 3 A) gfs 2.2 2.6 - s Input Capacitance (VDS = 28 V, VGS = 0 V, f = 1 MHz) Ciss - 83 - pF Output Capacitance (VDS = 28 V, VGS = 0 V, f = 1 MHz) Coss - 44 - pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0 V, f = 1 MHz) Crss - 4.3 - pF Common Source Power Gain (VDD = 28 V, Pout = 60 W, f = 945 MHz, IDQ = 100 mA) Gps 11.5 13.5 - dB Drain Efficiency (VDD = 28 V, Pout = 60 W, f = 945 MHz, IDQ = 100 mA) 53 60 - % Load Mismatch (VDD = 28 V, Pout = 60 W, IDQ = 100 mA, f = 945 MHz, Load VSWR 5:1 at all Phase Angles) FUNCTIONAL CHARACTERISTICS VGG R1 C6 R2 No Degradation in Output Power R4 C7 C8 C5 C11 C9 VDD B1 L1 R3 C12 C2 C13 C10 DUT RF INPUT C1 C4 TL2 TL3 TL1 TL4 RF OUTPUT C3 B1 C1 C2, C3, C6, C9 C4 C5, C12 C7, C10 C8, C11 C13 Short RF Bead Fair Rite-2743019447 18 pF Chip Capacitor 43 pF Chip Capacitor 100 pF Chip Capacitor 10 F, 50 Vdc Electrolytic Capacitor 1000 pF Chip Capacitor 0.1 F, 50 Vdc Chip Capacitor 250 F, 50 Vdc Electrolytic Capacitor L1 R1 R2 R3 R4 TL1-TL4 Ckt Board 5 Turns, 20 AWG, IDIA 0.126 10 k, 1/4 W Resistor 13 k, 1/4 W Resistor 1.0 k, 1/4 W Chip Resistor 4 x 39 , 1/8 W Chip Resistor Microstrip Line See Photomaster 1/32 Glass Teflon, r = 2.55 ARLON-GX-0300-55-22 Figure 1. MRF184 Test Circuit Schematic MRF184 MRF184S, R1 5.2-176 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA LAST ORDER 31JUL04 LIFETIME BUY DYNAMIC CHARACTERISTICS LAST SHIP 31JAN05 ON CHARACTERISTICS 5th - 50 7th - 60 0 20 30 40 50 Pout, OUTPUT POWER (WATTS PEP) 10 60 70 - 35 250 mA 600 mA - 45 - 55 0.1 Figure 2. Intermodulation Distortion Products versus Output Power 100 16 80 IDQ = 600 mA 16 400 mA 250 mA 14 100 mA VDD = 28 Vdc f = 945 MHz Gpe 70 60 50 40 15 30 Pout 20 VDS = 28 Vdc IDQ = 400 mA f = 945 MHz 10 0 1 10 Pout, OUTPUT POWER (WATTS) 0 100 Figure 4. Power Gain versus Output Power 0.5 1 1.5 2 Pin, INPUT POWER (WATTS) 14 3 2.5 Figure 5. Output Power versus Input Power 80 100 Pin = 4.0 W 90 80 2.0 W 70 60 50 1.0 W 40 30 20 12 14 16 20 24 22 26 28 VDD, SUPPLY VOLTAGE (VOLTS) 18 30 70 60 50 TYPICAL DEVICE SHOWN 40 30 20 VDS = 28 Vdc Pin = 2.0 W f = 945 MHz 10 IDQ = 400 mA f = 945 MHz 10 0 1 10 Pout, OUTPUT POWER (WATTS PEP) Figure 3. Intermodulation Distortion versus Output Power 18 12 VDD = 28 Vdc f1 = 945 MHz f2 = 945.1 MHz 400 mA Gpe , POWER GAIN (dB) -70 IDQ = 100 mA Pout , OUTPUT POWER (WATTS) Gpe , POWER GAIN (dB) LIFETIME BUY VDD = 28 Vdc f1 = 945 MHz f2 = 945.1 MHz IDQ = 400 mA - 25 32 0 0 Figure 6. Output Power versus Supply Voltage MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 0.5 1 1.5 2 3.5 2.5 3 4 VGS, GATE-SOURCE VOLTAGE (VOLTS) 4.5 5 Figure 7. Output Power versus Gate Voltage MRF184 MRF184S, R1 5.2-177 LAST SHIP 31JAN05 - 40 -15 LAST ORDER 31JUL04 3rd ORDER - 30 - 80 P out , OUTPUT POWER (WATTS) IMD, INTERMODULATION DISTORTION (dBc) - 20 P out , OUTPUT POWER (WATTS) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS TYPICAL CHARACTERISTICS 4 Pin = 2.5 W 60 50 40 VDD = 28 Vdc IDQ = 400 mA SINGLE TONE 30 1.0 W 20 0.5 W TYPICAL DEVICE SHOWN 2 1.5 1 VDS = 28 Vdc 0 840 820 860 880 900 920 940 f, FREQUENCY (MHz) 980 1000 960 0 Figure 8. Output Power versus Frequency 1 3 2 4 VGS, GATE VOLTAGE (VOLTS) 5 6 Figure 9. Drain Current versus Gate Voltage 6 140 5.5 100 Ciss 60 VGS = 0 Vdc f = 1.0 MHz 20 Crss 0 10 20 30 15 25 35 40 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 5 45 2 1.5 1 0.5 0 TJ = 150C TF = 70C 0 50 Figure 10. Capacitance versus Voltage 5 15 25 10 20 VDS, DRAIN VOLTAGE (Vdc) 30 65 16 15.5 5 15 25 10 20 VDS, DRAIN VOLTAGE (Vdc) 30 Figure 12. DC Safe Operating Area MRF184 MRF184S, R1 5.2-178 35 60 55 15 Gpe 14.5 50 14 45 13.5 TJ = 175C TF = 70C 0 35 Figure 11. DC Safe Operating Area Gpe, POWER GAIN (dB) 7 6.5 6 5.5 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 2.5 13 880 VDD = 28 Vdc IDQ = 400 mA Pout = 60 W (CW) 900 40 VSWR 920 940 f, FREQUENCY (MHz) 960 35 980 2.5 , EFFICIENCY (%) 40 Coss 5 4.5 4 3.5 3 1.5 2.0 INPUT VSWR 80 I D, DRAIN CURRENT (AMPS) 120 C, CAPACITANCE (pF) 2.5 1.0 LIFETIME BUY 0 800 I D, DRAIN CURRENT (AMPS) 3 0.5 10 LAST SHIP 31JAN05 3.5 70 I D, DRAIN CURRENT (mA) P out , OUTPUT POWER (WATTS) 80 Figure 13. Performance in Broadband Circuit MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA LAST ORDER 31JUL04 90 60 FUNDAMENTAL 20 10 0 3rd ORDER -10 VDS = 26 Vdc ID = 2.1 A f1 = 945 MHz f2 = 945.1 MHz - 20 - 30 - 40 10 15 25 20 30 Pin, INPUT POWER (dBm) 35 40 LIFETIME BUY Figure 14. Class A Third Order Intercept Point R1 C10 B1 C8 C7 C6 C5 C9 R4 C11 C12 R2 R3 C2 C13 L1 C1 C4 TL2 LAST SHIP 31JAN05 40 30 TL3 TL1 TL4 C3 MRF184 Figure 15. Component Parts Layout MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF184 MRF184S, R1 5.2-179 LAST ORDER 31JUL04 P out , OUTPUT POWER (dBm) 50 800 f = 1000 MHz 950 850 f = 1000 MHz 950 Z0 = 10 900 850 800 LIFETIME BUY ZOL* VDD = 28 Vdc, IDQ = 100 mA, Pout = 60 W Zin f MHz Zin Ohms ZOL* Ohms 800 0.40 + j0.90 1.85 - j1.00 850 0.45 + j1.10 1.75 - j0.90 900 0.52 + j1.20 1.70 - j0.75 950 0.60 + j1.30 1.60 - j0.50 1000 0.70 + j1.38 1.57 - j0.40 = Conjugate of source impedance. Zout = Conjugate of the load impedance at a given output power, voltage, frequency and efficiency. Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency and device stability. Figure 16. Series Equivalent Input and Output Impedance MRF184 MRF184S, R1 5.2-180 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA LAST SHIP 31JAN05 900 LAST ORDER 31JUL04 Zin Table 1. Common Source S-Parameters (VDS = 13.5 V) ID = 2.0 A S12 S22 20 |S11| 0.916 179 |S21| 10.88 80 |S12| 0.014 -22 |S22| 0.843 175 30 0.917 178 9.26 79 0.014 -25 0.847 174 40 0.918 177 8.10 78 0.015 -29 0.852 174 50 0.919 176 7.16 77 0.015 -33 0.853 174 100 0.919 175 4.57 75 0.015 -35 0.855 173 150 0.920 174 3.34 67 0.015 -38 0.865 173 200 0.921 173 2.60 62 0.014 -41 0.867 173 250 0.922 173 2.11 59 0.014 -45 0.877 173 300 0.928 172 1.77 55 0.014 -49 0.881 173 350 0.938 172 1.50 50 0.013 -55 0.887 173 400 0.941 171 1.28 47 0.013 -59 0.895 173 450 0.942 171 1.12 44 0.012 -62 0.896 173 500 0.943 171 1.00 41 0.012 -68 0.898 172 550 0.945 171 0.91 38 0.010 -75 0.899 172 600 0.947 171 0.80 35 0.010 -79 0.903 172 650 0.948 171 0.71 33 0.009 -85 0.905 172 700 0.955 170 0.65 30 0.008 -88 0.909 172 750 0.959 170 0.60 28 0.008 -95 0.919 172 800 0.962 169 0.55 25 0.007 -102 0.922 172 850 0.963 169 0.50 23 0.007 -111 0.923 171 900 0.964 169 0.45 21 0.007 -118 0.926 171 950 0.968 169 0.43 19 0.006 -125 0.929 171 1000 0.970 169 0.39 18 0.006 -129 0.933 171 1050 0.971 168 0.36 17 0.005 -134 0.935 171 1100 0.972 168 0.34 14 0.005 -142 0.936 170 1150 0.973 168 0.32 13 0.005 -149 0.938 170 1200 0.974 167 0.29 12 0.006 -156 0.940 169 1250 0.976 167 0.28 10 0.007 -162 0.943 169 1300 0.975 167 0.26 9 0.008 -173 0.945 168 1350 0.972 166 0.25 8 0.009 -178 0.946 167 1400 0.969 166 0.24 7 0.011 175 0.947 167 1450 0.965 165 0.22 6 0.012 172 0.948 167 1500 0.959 164 0.21 5 0.013 169 0.950 167 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF184 MRF184S, R1 5.2-181 LAST SHIP 31JAN05 S21 LAST ORDER 31JUL04 LIFETIME BUY f MHz S11 Table 2. Common Source S-Parameters (VDS = 28 V) ID = 2.0 A S21 S12 S22 20 |S11| 0.912 -170 |S21| 16.01 84 |S12| 0.016 -12 |S22| 0.746 178 30 0.917 -173 13.73 82 0.015 -15 0.755 177 40 0.918 -174 12.02 80 0.014 -17 0.759 177 50 0.919 -176 10.62 78 0.013 -20 0.766 176 100 0.922 -178 6.76 71 0.012 -22 0.775 176 150 0.930 177 4.92 65 0.011 -25 0.791 176 200 0.931 176 3.82 60 0.010 -27 0.791 176 250 0.933 175 3.07 55 0.009 -29 0.793 176 300 0.941 174 2.53 51 0.009 -31 0.826 176 350 0.943 173 2.14 45 0.008 -35 0.834 176 400 0.945 172 1.83 41 0.008 -45 0.853 176 450 0.948 172 1.58 38 0.007 -52 0.858 176 500 0.950 172 1.39 35 0.007 -57 0.865 176 550 0.955 172 1.24 32 0.007 -61 0.876 176 600 0.960 172 1.10 29 0.006 -64 0.882 176 650 0.965 171 0.96 26 0.006 -68 0.888 175 700 0.967 171 0.89 24 0.006 -71 0.894 175 750 0.970 171 0.80 20 0.005 -73 0.904 175 800 0.973 170 0.73 18 0.005 -78 0.906 175 850 0.974 169 0.66 17 0.004 -83 0.908 174 900 0.975 169 0.61 13 0.004 -91 0.909 173 950 0.976 169 0.57 12 0.004 -94 0.915 173 1000 0.978 168 0.52 11 0.004 -96 0.916 173 1050 0.979 168 0.47 9 0.005 -102 0.919 172 1100 0.980 168 0.43 7 0.005 -115 0.924 172 1150 0.980 167 0.41 6 0.006 -119 0.931 171 1200 0.979 167 0.38 5 0.006 -125 0.934 170 1250 0.978 167 0.36 2 0.006 -139 0.935 170 1300 0.974 167 0.34 1 0.007 -148 0.936 170 1350 0.971 166 0.32 0 0.007 -156 0.937 169 1400 0.970 165 0.31 -1 0.007 -165 0.938 169 1450 0.969 165 0.30 -2 0.008 -171 0.939 169 1500 0.965 164 0.27 -3 0.008 -178 0.946 169 MRF184 MRF184S, R1 5.2-182 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA LAST SHIP 31JAN05 S11 LAST ORDER 31JUL04 LIFETIME BUY f MHz MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N-Channel Enhancement-Mode Lateral MOSFET LAST SHIP 31JAN05 MRF185 RF POWER Field-Effect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N-CHANNEL BROADBAND RF POWER MOSFET * High Gain, Rugged Device * Broadband Performance from HF to 1 GHz * Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances LIFETIME BUY D G S (FLANGE) G D CASE 375B-02, STYLE 2 Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS 20 Vdc Storage Temperature Range Tstg - 65 to +150 C Operating Junction Temperature TJ 200 C Total Device Dissipation @ TC = 25C Derate above 25C PD 250 1.45 Watts W/C Symbol Max Unit RJC 0.7 C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 - - Vdc Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0 V) IDSS - - 1 Adc Gate-Source Leakage Current (VGS = 20 V, VDS = 0 V) IGSS - - 1 Adc Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 V, ID = 1 mAdc) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF185 5.2-183 LAST ORDER 31JUL04 MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS - continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Gate Quiescent Voltage (VDS = 26 V, ID = 300 mA per side) VGS(Q) 3 4 5 Vdc Delta Quiescent Voltage between sides (VDS = 26 V, ID = 300 mA per side) VGS(Q) - 0.15 0.3 Vdc Drain-Source On-Voltage (VGS = 10 V, ID = 3 A per side) VDS(on) - 0.75 1 Vdc Forward Transconductance (VDS = 10 V, ID = 3 A per side) gfs 1.6 2 - s Output Capacitance (VDS = 28 V, VGS = 0 V, f = 1 MHz) Coss - 38 - pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0 V, f = 1 MHz) Crss - 4.6 6 pF Common Source Power Gain (VDD = 28 V, Pout = 85 W, f = 960 MHz, IDQ = 600 mA) Gps 11 14 - dB Drain Efficiency (VDD = 28 V, Pout = 85 W, f = 960 MHz, IDQ = 600 mA) 45 53 - % LIFETIME BUY DYNAMIC CHARACTERISTICS FUNCTIONAL CHARACTERISTICS MRF185 5.2-184 No Degradation in Output Power LAST ORDER 31JUL04 Load Mismatch (VDD = 28 Vdc, Pout = 85 W, f = 960 MHz, IDQ = 600 mA, Load VSWR 5:1 at All Phase Angles) LAST SHIP 31JAN05 ON CHARACTERISTICS MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA LAST SHIP 31JAN05 MRF186 RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 28 volt base station equipment. * Guaranteed Performance @ 960 MHz, 28 Volts Output Power -- 120 Watts (PEP) Power Gain -- 11 dB Efficiency -- 30% Intermodulation Distortion -- -28 dBc * Excellent Thermal Stability * 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 28 Vdc, 960 MHz, 120 Watts CW 120 W, 1.0 GHz, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET CASE 375B-02, STYLE 2 MAXIMUM RATINGS (2) Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Drain-Gate Voltage (RGS = 1 M) VDGR 65 Vdc VGS 20 Vdc Drain Current -- Continuous ID 14 Adc Total Device Dissipation @ TC = 70C Derate above 70C PD 162.5 1.25 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Symbol Max Unit RJC 0.8 C/W Gate-Source Voltage Operating Junction Temperature THERMAL CHARACTERISTICS (2) Characteristic Thermal Resistance, Junction to Case NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF186 5.2-185 LAST ORDER 31JUL04 The RF MOSFET Line ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 20 Vdc, VDS = 0) IGSS -- -- 1 Adc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 300 Adc Per Side) VGS(th) 2.5 3 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 300 mAdc Per Side) VGS(Q) 3.3 4.2 5 Vdc Delta Gate Threshold Voltage (Side to Side) (VDS = 28 V, ID = 300 mA Per Side) VGS(Q) -- -- 0.3 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 3 Adc Per Side) VDS(on) -- 0.58 0.7 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc Per Side) gfs 2.4 2.8 -- S Input Capacitance (Per Side) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Ciss -- 177 -- pF Output Capacitance (Per Side) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Coss -- 45 -- pF Reverse Transfer Capacitance (Per Side) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Crss -- 3.4 -- pF Two-Tone Common Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 960.0 MHz, f2 = 960.1 MHz) Gps 11 12.2 -- dB Two-Tone Drain Efficiency (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 960.0 MHz, f2 = 960.1 MHz) 30 35 -- % 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 960.0 MHz, f2 = 960.1 MHz) IMD -- -32 -28 dBc Input Return Loss (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 960.0 MHz, f2 = 960.1 MHz) IRL 9 16 -- dB Two-Tone Common Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Gps -- 12 -- dB Two-Tone Drain Efficiency (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) -- 33 -- % 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IMD -- -32 -- dBc Input Return Loss (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 x 400 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IRL -- 16 -- dB LIFETIME BUY ON CHARACTERISTICS (1) DYNAMIC CHARACTERISTICS (1) FUNCTIONAL CHARACTERISTICS (In Motorola Test Fixture) (2) Output Mismatch Stress (VDD = 28 Vdc, Pout = 120 W CW, IDQ = 2 x 400 mA, f = 960 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) No Degradation In Output Power Before and After Test (1) Each side of device measured separately. (2) Device measured in push-pull configuration. MRF186 5.2-186 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA LAST ORDER 31JUL04 Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 50 Adc) LAST SHIP 31JAN05 OFF CHARACTERISTICS (1) C1 VDD + + B2 C2 C3 C4 C5 C6 C34 C7 C8 C9 L1 COAX1 R2 BALUN2 C28 Z12 C26 Z2 RF INPUT C19 Z1 R3 C21 Z3 C22 Z4 Z6 Z8 Z10 Z5 C23 Z7 C24 Z9 Z11 Z16 Z18 Z20 C32 C29 DUT C30 Z22 C31 MRF186 C20 C25 R4 Z13 Z15 Z17 Z19 Z21 C33 C27 R5 COAX2 BALUN1 VGG + L2 B3 R6 B1 - B4 C1, C7, C8, C10, C16, C17 C2, C11, C34, C35 C3, C6, C12, C15 C4, C5, C13, C14, C19, C20, C32, C33 C9, C18 C21, C22 C23, C30 C24, C25, C26 C27, C28 RF OUTPUT N2 N1 LIFETIME BUY Z14 C10 C11 VDD + + B4 C12 C13 C14 C15 C35 C16 C17 C18 Fair Rite Products Short Ferrit Bead, 2743021446 C31 10 F, 50 V, Tantalum 0.1 F, Chip Capacitor 330 pF, Chip Capacitor L1, L2 N1, N2 R1, R6 R2, R5 R3, R4 Z1 - Z22 Balun1, Balun2, Coax1, Coax2 2.20 50 , 0.086 OD Semi-Rigid Coax Board 1/32 Glass Teflon, r = 2.55 47 pF, Chip Capacitor 250 F, 50 V, Electrolytic Capacitor 12 pF, Chip Capacitor 0.6 - 4.5 pF, Variable Capacitor, Johanson Gigatrim 5.1 pF, Chip Capacitor 3.9 pF, Chip Capacitor 0.8 - 8.0 pF, Variable Capacitor, Johanson Gigatrim 3 Turns, #20 AWG, IDIA 0.126, 24.7 nH Type N Connectors 1 k, 1/4 W, Carbon Resistor 1.2 k, 0.1 W, Chip Resistor 75 , 0.1 W, Chip Resistor Microstrip (See Component Placement) Figure 1. 930 - 960 MHz Test Circuit Schematic MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF186 5.2-187 LAST SHIP 31JAN05 B1 R1 LAST ORDER 31JUL04 VGG + TYPICAL CHARACTERISTICS -40 5th Order -50 7th Order -60 -70 LIFETIME BUY 0 25 75 100 50 Pout, OUTPUT POWER (WATTS) PEP 125 150 1200 mA -40 400 mA 800 mA -45 -50 VDD = 28 V f1 = 960.0 MHz f2 = 960.1 MHz -55 -60 0.1 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 Figure 3. Intermodulation Distortion versus Output Power 13.8 140 P out, OUTPUT POWER (WATTS) , DRAIN EFFICIENCY (%) IDQ = 1200 mA 15 Gps , POWER GAIN (dB) IDQ = 200 mA -35 Figure 2. Intermodulation Distortion Products versus Output Power 16 800 mA 14 400 mA 13 200 mA 12 VDD = 28 V f = 960 MHz 11 1 10 Pout, OUTPUT POWER (WATTS) Gps 120 100 13.6 13.4 VDS = 28 V f = 960 MHz IDQ = 800 mA 80 13.2 13 60 Pout 40 12.8 DRAIN EFFICIENCY 12.6 20 0 12.4 0 100 Figure 4. Power Gain versus Output Power 1 2 5 4 3 Pin, INPUT POWER (WATTS) 6 7 8 Figure 5. Output Power versus Input Power 140 140 Pin = 5.5 W 120 P out, OUTPUT POWER (WATTS) f = 960 MHz IDQ = 800 mA 120 P out, OUTPUT POWER (WATTS) -30 100 80 60 2W 40 1W 20 0 12 14 16 18 20 22 24 26 28 30 VDD, SUPPLY VOLTAGE (VOLTS) Figure 6. Output Power versus Supply Voltage MRF186 5.2-188 32 100 TYPICAL DEVICE SHOWN 80 60 Pin = 5.5 W f = 960 MHz IDQ = 800 mA 40 20 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VGS, GATE-SOURCE VOLTAGE (VOLTS) Figure 7. Output Power versus Gate Voltage MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA LAST ORDER 31JUL04 3rd Order Gps , POWER GAIN (dB) VDD = 28 V f1 = 960.0 MHz f2 = 960.1 MHz IDQ = 800 mA -30 LAST SHIP 31JAN05 -25 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) -20 TYPICAL CHARACTERISTICS 4 200 2 1.5 TYPICAL DEVICE SHOWN 1 VGS = 0 Vdc f = 1 MHz 120 80 Coss 40 0.5 0 LIFETIME BUY Crss 0 0 1 0.5 1.5 2 2.5 3 3.5 4 4.5 5 VGS, GATE-SOURCE VOLTAGE (VOLTS) 5.5 6 0 Figure 8. Drain Current versus Gate Voltage 50 Figure 9. Capacitance versus Voltage 15 13.5 Gps , POWER GAIN (dB) 12 Gps , POWER GAIN (dB) 10 30 40 20 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 9 6 -5 VDS = 28 V Pout = 120 W (PEP) f = 960 MHz IDQ = 800 mA -10 IRL 13 -15 -20 Gps 12.5 -25 TJ = 200C TF = 70C 3 IMD 0 0 5 15 25 20 Pout, OUTPUT POWER (WATTS) 10 30 35 12 925 Figure 10. DC Safe Operating Area MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 930 935 945 950 940 f, FREQUENCY (MHz) -30 955 -35 965 960 Figure 11. Broadband Circuit Performance MRF186 5.2-189 LAST ORDER 31JUL04 2.5 IMD, INTERMODULATION DISTORTION (dBc) INPUT RETURN LOSS (dB) 160 3 C, CAPACITANCE (pF) ID , DRAIN CURRENT (A) VDS = 10 Vdc LAST SHIP 31JAN05 Ciss 3.5 LIFETIME BUY 930 MHz 930 MHz ZOL* f = 960 MHz VCC = 28 V, IDQ = 2 f MHz Zin Zo = 20 400 mA, Pout = 120 Watts (PEP) Zin ZOL* 930 2.5 + j6.9 4.3 + j1.2 945 2.5 + j7.0 4.3 + j1.0 960 2.2 + j7.1 4.3 + j0.9 = Complex conjugate of source impedance. ZOL* = Conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current, efficiency and frequency. Note: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation performance. Impedances shown represent a single channel (1/2 of MRF186) impedance measurement. Figure 12. Series Equivalent Input and Output Impedance MRF186 5.2-190 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA LAST SHIP 31JAN05 Zin LAST ORDER 31JUL04 f = 960 MHz VGG B2 C8 C34 C1 B1 C9 VDD C2 C5 C6 C26 C3 C4 C20 R4 C22 C12 C13 C24 C29 C23 C32 C30 C31 C33 R5 C25 C27 L2 C14 C15 B3 C11 C10 B4 VDD C35 MRF186 R6 C16 C17 LAST ORDER 31JUL04 LIFETIME BUY L1 C21 R3 C19 C28 R2 LAST SHIP 31JAN05 C7 R1 C18 VGG Figure 13. Component Placement Diagram of 930 - 960 MHz Broadband Test Fixture MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF186 5.2-191 MOTOROLA SEMICONDUCTOR TECHNICAL DATA RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 85 W, 1.0 GHz, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 465-04, STYLE 1 (MRF187) CASE 465A-04, STYLE 1 (MRF187S) MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Drain-Gate Voltage (RGS = 1 M) VDGR 65 Vdc VGS 20 Vdc Gate-Source Voltage Drain Current -- Continuous ID 15 Adc Total Device Dissipation @ TC 25C Derate above 25C PD 250 1.43 Watts W/C Storage Temperature Range Tstg - 65 to +200 C TJ 200 C Symbol Max Unit RJC 0.70 C/W Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 2 MRF187 MRF187S 5.2-192 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA LAST ORDER 31JUL04 LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of these devices makes them ideal for large-signal, common source amplifier applications in 26 volt base station equipment. * Guaranteed Performance @ 880 MHz, 26 Volts Output Power -- 85 Watts (PEP) Power Gain -- 12 dB Efficiency -- 30% Intermodulation Distortion -- -28 dBc * 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 26 Vdc, 880 MHz, 85 Watts CW * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters LAST SHIP 31JAN05 MRF187 MRF187S The RF MOSFET Line ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 20 Vdc, VDS = 0 ) IGSS -- -- 1 Adc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 550 mAdc) VGS(Q) 3 -- 5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 3 Adc) VDS(on) -- 0.40 0.55 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 5 Adc) gfs -- 2 -- S Input Capacitance (Includes Internal Input MOScap) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Ciss -- 295 -- pF Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Coss -- 85 -- pF Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Crss -- 10 -- pF Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) Gps 12 13 -- dB Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) D 30 33 -- % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) IMD -- -31 -28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) IRL 9 15 -- dB Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA, f1 = 865.0 MHz, f2 = 865.1 MHz and f1 = 895.0 MHz, f2 = 895.1 MHz) Gps -- 13 -- dB Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA, f1 = 865.0 MHz, f2 = 865.1 MHz and f1 = 895.0 MHz, f2 = 895.1 MHz) D -- 33 -- % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA, f1 = 865.0 MHz, f2 = 865.1 MHz and f1 = 895.0 MHz, f2 = 895.1 MHz) IMD -- -31 -- dBc Input Return Loss (VDD = 26 Vdc, Pout = 85 W PEP, IDQ = 550 mA, f1 = 865.0 MHz, f2 = 865.1 MHz and f1 = 895.0 MHz, f2 = 895.1 MHz) IRL -- 12 -- dB LIFETIME BUY ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture) Output Mismatch Stress (VDD = 26 Vdc, Pout = 85 W CW, IDQ = 550 mA, f = 880 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA No Degradation In Output Power Before and After Test MRF187 MRF187S 5.2-193 LAST ORDER 31JUL04 Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 50 Adc) LAST SHIP 31JAN05 OFF CHARACTERISTICS VDD + B2 B1 R3 + + C1 C2 R2 C3 C4 C12 L1 C11 Z8 Z9 + C17 C18 C19 Z4 Z10 Z11 RF OUTPUT C8 Z1 Z2 Z3 Z4 Z5 C20 Z6 C10 C5 C6 LIFETIME BUY C16 L2 Z7 RF INPUT C13 B1 - B2 C1 C2, C16 C3 C4, C13 C5, C20 C6, C15 C7 C8, C9 C10, C11 C12 C14 C17, C18, C19 C7 C9 C15 DUT Ferrite Bead, Fair Rite, 2743019447 10 F, 50 V, Electrolytic Capacitor, ECEV1HV100R Panasonic 0.10 F, B Case Chip Capacitors, CDR33BX104AKWS, Kemet 20000 pF, B Case Chip Capacitor, 200B203MCA50X, ATC 100 pF, B Case Chip Capacitors, 100B101JCA500X, ATC 47 pF, B Case Chip Capacitors, 100B470JCA500X, ATC 0.8 - 8.0 pF, Variable Capacitors, Johanson Gigatrim 4.7 pF, B Case Chip Capacitor, 100B4R7JCA500X, ATC 10 pF, B Case Chip Capacitors, 100B100JCA500X, ATC 16 pF, B Case Chip Capacitors, 100B160JCA500X, ATC 43 pF, B Case Chip Capacitor, 100B430JCA500X, ATC 7.5 pF, B Case Chip Capacitor, 100B7R5JCA500X, ATC 10 F, 35 V, Electrolytic Capacitors, SMT, Kemet MRF187 MRF187S 5.2-194 C14 L1, L2 R1 R2 R3 Z1, Z11 Z2, Z10 Z3 Z4 Z5 Z6 Z7 Z8 5 Turns, #24 AWG, 0.059 OD 12 , 1/4 Watt Carbon 4.7 M, 1/4 Watt Carbon 16 k, 1/4 Watt Carbon 0.150 x 0.220 Microstrip 0.410 x 0.220 Microstrip 0.160 x 0.630 Microstrip 0.160 x 0.630 Microstrip 0.098 x 0.630 Microstrip 0.098 x 0.630 Microstrip 0.210 x 0.220 Microstrip 0.050 x 0.220 Microstrip Figure 1. MRF187 Schematic MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA LAST SHIP 31JAN05 R1 LAST ORDER 31JUL04 VGG + -5 30 -10 IRL 25 -15 VDD = 26 V IDQ = 550 mA, Pout = 85 WATTS (PEP) TWO-TONE MEASUREMENT, 100 kHz TONE SPACING 20 15 -20 -25 Gps 10 -30 5 IMD 0 865 870 -35 875 880 885 f, FREQUENCY (MHz) -40 895 890 -30 -40 3rd Order -50 7th Order Pout -70 0.1 16 17 14 16 VDD = 26 V IDQ = 550 mA f = 880 MHz TWO-TONE MEASUREMENT, 100 kHz TONE SPACING 60 40 10 8 6 4 D G ps , POWER GAIN (dB) 12 80 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Pin, INPUT POWER (WATTS) 4.5 900 mA 15 700 mA 550 mA 14 13 400 mA 12 Figure 4. Class AB Parameters versus Input Power VDD = 26 V f = 880 MHz TWO-TONE MEASUREMENT, 100 kHz TONE SPACING 250 mA 10 0.1 0 5.5 5.0 1100 mA 11 2 20 0 100 1300 mA 120 100 10 1.0 Pout, OUTPUT POWER (WATTS) PEP Figure 3. Intermodulation Distortion Products versus Output Power G ps , POWER GAIN (dB) Gps 140 5th Order -60 Figure 2. Class AB Broadband Circuit Performance 160 VDD = 26 V IDQ = 550 mA f = 880 MHz TWO-TONE MEASUREMENT, 100 kHz TONE SPACING -20 1.0 10 Pout, OUTPUT POWER (WATTS) PEP 100 Figure 5. Power Gain versus Output Power - 10 - 20 - 30 VDD = 26 V f = 880 MHz TWO-TONE MEASUREMENT, 100 kHz TONE SPACING 1100 mA 250 mA - 40 400 mA - 50 900 mA 1300 mA 700 mA 550 mA - 60 0.1 1.0 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Intermodulation Distortion versus Output Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA LAST SHIP 31JAN05 35 -10 MRF187 MRF187S 5.2-195 LAST ORDER 31JUL04 D IMD, INTERMODULATION DISTORTION (dBc) 0 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 40 IMD, INTERMODULATION DISTORTION (dBc) Pout, OUTPUT POWER (WATTS) PEP, D , DRAIN EFFICIENCY (%) LIFETIME BUY D , DRAIN EFFICIENCY (%), Gps , POWER GAIN (dB) TYPICAL CHARACTERISTICS Zin Zo = 10 LIFETIME BUY f = 865 MHz ZOL* 895 MHz VCC = 26 V, IDQ = 550 mA, Pout = 85 Watts (PEP) f MHz Zin Zin ZOL* 865 1.04 + j1.51 1.13 - j0.091 880 1.03 + j1.39 1.20 - j0.176 895 1.03 + j1.29 1.28 - j0.242 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Note: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Figure 7. Series Equivalent Input and Output Impedance MRF187 MRF187S 5.2-196 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA LAST ORDER 31JUL04 895 MHz LAST SHIP 31JAN05 f = 865 MHz C2 R1 TO GATE BIAS FEEDTHRU B1 TO DRAIN BIAS FEEDTHRU B2 C4 R2 L1 Z2 Z1 Z3 C8 C11 Z5 C17 C18 C19 L2 Z7 C7 C5 C20 C14 Z4 C9 Z6 C10 C6 Z8 C15 REV 1 Figure 8. MRF187 Populated PC Board Layout Diagram MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA LAST ORDER 31JUL04 LIFETIME BUY C16 C13 C12 C3 R3 LAST SHIP 31JAN05 C1 MRF187 MRF187S 5.2-197 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor MRF275G N-Channel Enhancement-Mode Designed primarily for wideband large-signal output and driver stages from 100 - 500 MHz. 150 W, 28 V, 500 MHz N-CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET * Guaranteed Performance @ 500 MHz, 28 Vdc Output Power -- 150 Watts Power Gain -- 10 dB (Min) Efficiency -- 50% (Min) 100% Tested for Load Mismatch at all Phase Angles with VSWR 30:1 * Overall Lower Capacitance @ 28 V Ciss -- 135 pF Coss -- 140 pF Crss -- 17 pF * Simplified AVC, ALC and Modulation Typical data for power amplifiers in industrial and commercial applications: * Typical Performance @ 400 MHz, 28 Vdc Output Power -- 150 Watts Power Gain -- 12.5 dB Efficiency -- 60% * Typical Performance @ 225 MHz, 28 Vdc Output Power -- 200 Watts Power Gain -- 15 dB Efficiency -- 65% D G S (FLANGE) G CASE 375-04, STYLE 2 D * S-Parameters Available for Download into Frequency Domain Simulators. See http://motorola.com/sps/rf/designtds/ MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Rating VDSS 65 Vdc Drain-Gate Voltage (RGS = 1.0 M) VDGR 65 Vdc VGS 40 Adc Drain Current -- Continuous ID 26 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 400 2.27 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Symbol Max Unit RJC 0.44 C/W Gate-Source Voltage Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MRF275G 5.2-198 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) IDSS -- -- 1 mA Gate-Source Leakage Current (VGS = 20 V, VDS = 0) IGSS -- -- 1 A Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) VGS(th) 1.5 2.5 4.5 Vdc Drain-Source On-Voltage (VGS = 10 V, ID = 5 A) VDS(on) 0.5 0.9 1.5 Vdc gfs 3 3.75 -- mhos Input Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Ciss -- 135 -- pF Output Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Coss -- 140 -- pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Crss -- 17 -- pF Common Source Power Gain (VDD = 28 V, Pout = 150 W, f = 500 MHz, IDQ = 2 x 100 mA) Gps 10 11.2 -- dB Drain Efficiency (VDD = 28 V, Pout = 150 W, f = 500 MHz, IDQ = 2 x 100 mA) 50 55 -- % Electrical Ruggedness (VDD = 28 V, Pout = 150 W, f = 500 MHz, IDQ = 2 x 100 mA, VSWR 30:1 at all Phase Angles) Characteristic OFF CHARACTERISTICS (1) Drain-Source Breakdown Voltage (VGS = 0, ID = 50 mA) ON CHARACTERISTICS (1) Forward Transconductance (VDS = 10 V, ID = 2.5 A) DYNAMIC CHARACTERISTICS (1) FUNCTIONAL CHARACTERISTICS (2) (Figure 1) No Degradation in Output Power 1. Each side of device measured separately. 2. Measured in push-pull configuration. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF275G 5.2-199 B A C17 +VGG C18 +28 V L5 C14 R1 C15 C16 D.U.T. Z3 C10 Z5 Z7 C11 C2 B1 C5 C6 C7 C8 C9 B2 C3 C12 Z4 Z2 Z6 Z8 C4 C13 L2 L4 C20 C21 A B1 B2 C1, C2, C3, C4, C10, C11, C12, C13 C5, C8 C6 C7 C9 C14, C15, C16, C20, C21, C22 C17, C18 C19 L1, L2 + L3 C1 Z1 C19 C22 L1 L3, L4 L6 B Balun, 50 , 0.086 O.D. 2 Long, Semi Rigid Coax Balun, 50 , Coax 0.141 O.D. 2 Long, Semi Rigid L5 L6 270 pF, ATC Chip Capacitor 1.0 - 20 pF, Trimmer Capacitor, Johanson 22 pF, Mini-Unelco Capacitor 15 pF, Unelco Capacitor 2.1 pF, ATC Chip Capacitor R1 W1 - W4 0.1 F, Ceramic Capacitor 680 pF, Feedthru Capacitor 10 F, 50 V, Electrolytic Capacitor, Tantalum 10 Turns AWG #24, 0.145 O.D., 106 nH Taylor-Spring Inductor 10 Turns AWG #18, 0.340 I.D., Enameled Wire Z1, Z2 Z3, Z4, Z5, Z6 Z7, Z8 Ferroxcube VK200 20/4B 4 Turns #16, 0.340 I.D., Enameled Wire 1.0 k,1/4 W Resistor 20 x 200 x 250 mils, Wear Pads, Beryllium-Copper, (See Component Location Diagram) 1.10 x 0.245, Microstrip Line 0.300 x 0.245, Microstrip Line 1.00 x 0.245, Microstrip Line Board material 0.060 Teflon-fiberglass, r = 2.55, copper clad both sides, 2 oz. copper. Points A are connected together on PCB. Points B are connected together on PCB. Figure 1. 500 MHz Test Circuit MRF275G 5.2-200 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA TYPICAL CHARACTERISTICS 160 225 MHz 250 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 300 400 MHz 500 MHz 200 150 100 IDQ = 2 x 100 mA VDD = 28 V 50 140 120 100 80 60 20 0 0 10 15 Pin, INPUT POWER (Watts) 5 20 VDS = 28 V IDQ = 2 x 100 mA Pin = Constant f = 500 MHz 40 0 -10 25 Figure 2. Output Power versus Input Power 8 Pout , OUTPUT POWER (WATTS) I D , DRAIN CURRENT (AMPS) 2 4 180 VDS = 10 V VGS(th) = 2.5 V 9 7 6 5 4 3 2 Pin = 14 W 160 140 10 W 120 100 6W 80 60 40 IDQ = 2 x 100 mA f = 500 MHz 20 1 0.5 0 1 1.5 2.5 3.5 3 2 VGS, GATE-SOURCE VOLTAGE (V) 4 4.5 0 12 5 Figure 4. Drain Current versus Gate Voltage (Transfer Characteristics) 14 16 22 18 20 VDD, SUPPLY VOLTAGE (V) 24 26 28 Figure 5. Output Power versus Supply Voltage 250 200 180 12 W Pin = 14 W Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) -2 0 -6 -4 VGS, GATE-SOURCE VOLTAGE (V) Figure 3. Output Power versus Gate Voltage 10 0 -8 160 140 10 W 120 100 6W 80 60 40 IDQ = 2 x 100 mA f = 400 MHz 20 0 12 14 16 18 20 22 VDD, SUPPLY VOLTAGE (V) 24 26 200 10 W 150 Pin = 4 W 100 IDQ = 2 x 100 mA f = 225 MHz 50 28 Figure 6. Output Power versus Supply Voltage MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 0 12 14 16 18 20 22 24 VDD, SUPPLY VOLTAGE (V) 26 28 Figure 7. Output Power versus Supply Voltage MRF275G 5.2-201 TYPICAL CHARACTERISTICS VGS, GATE-SOURCE VOLTAGE (NORMALIZED) 1000 C, CAPACITANCE (pF) Coss 100 Ciss Crss 10 VGS = 0 V f = 1.0 MHz 1 0 5 15 10 20 VDS, DRAIN-SOURCE VOLTAGE (V) 25 30 1.3 VDD = 28 V 1.2 1.1 ID = 4 A 1 2A 0.9 3A 0.8 0.7 -25 Figure 8. Capacitance versus Drain-Source Voltage* *Data shown applies only to one half of device, MRF275G 0 25 0.1 A 50 100 125 150 75 TC, CASE TEMPERATURE (C) 175 200 Figure 9. Gate-Source Voltage versus Case Temperature I D , DRAIN CURRENT (AMPS) 100 TC = 25C 10 1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 Figure 10. DC Safe Operating Area MRF275G 5.2-202 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA VDD = 28 V, IDQ = 2 x 100 mA, Pout = 150 W f = 500 MHz Zo = 10 400 ZOL* Zin Zin Ohms ZOL* Ohms 225 1.6 - j2.30 3.2 - j1.50 400 1.9 + j0.48 2.3 - j0.19 500 1.9 + j2.60 2.0 + j1.30 ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device operates at a given ZOL* = output power, voltage and frequency. f = 500 MHz 400 f (MHz) 225 Note: Input and output impedance values given are measured from gate to gate and drain to drain respectively. 225 Figure 11. Series Equivalent Input/Output Impedance MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF275G 5.2-203 B A L5 C14 C15 L6 BIAS C10 R1 C11 C1 C12 R2 L3 D.U.T. L1 C8 Z1 B1 C3 C2 C4 Z3 Z2 C7 Z4 B C16 C1, C2, C8, C9 C3, C5, C7 C4 C6 C10, C12, C13, C16, C17 C11 C14, C15 C18 Z6 L4 A B2 B2 C9 R3 B1 Z5 C6 C5 L2 28 V C18 C13 Balun, 50 , 0.086 O.D. 2 Long, Semi Rigid Coax Balun, 50 , 0.141 O.D. 2 Long, Semi Rigid Coax 270 pF, ATC Chip Capacitor 1.0 - 20 pF, Trimmer Capacitor 15 pF, ATC Chip Capacitor 33 pF, ATC Chip Capacitor 0.01 F, Ceramic Capacitor 1.0 F, 50 V, Tantalum 680 pF, Feedthru Capacitor 20 F, 50 V, Tantalum 0.180 C17 L1, L2 L3, L4 L5 L6 R1 R2, R3 Z1, Z2 Z3, Z4 Z5, Z6 #18 Wire, Hairpin Inductor 12 Turns #18, 0.340 I.D., Enameled Wire Ferroxcube VK200 20/4B 3 Turns #16, 0.340 I.D., Enameled Wire 1.0 k, 1/4 W Resistor 10 k, 1/4 W Resistor 0.400 x 0.250, Microstrip Line 0.870 x 0.250, Microstrip Line 0.500 x 0.250, Microstrip Line 0.200 Board material 0.060 Teflon-fiberglass, r = 2.55, copper clad both sides, 2 oz. copper. Figure 12. 400 MHz Test Circuit MRF275G 5.2-204 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA L2 R1 BIAS 0 - 6 V C8 C3 + 28 V - C10 C9 C4 R2 L1 D.U.T. T2 T1 C6 C5 C1 C1 C2, C3, C7, C8 C4, C9 C5 C6 C10 L1 L2 C2 C7 8.0 - 60 pF, Arco 404 1000 pF, Chip Capacitor 0.1 F, Chip Capacitor 180 pF, Chip Capacitor 100 pF and 130 pF, Chips in Parallel 0.47 F, Chip Capacitor, 1215 or Equivalent, Kemet 10 Turns AWG #16, 1/4 I.D., Enamel Wire, Close Wound Ferrite Beads of Suitable Material for 1.5 - 2.0 H Total Inductance R1 R2 T1 T2 100 , 1/2 W 1.0 k , 1/2 W 4:1 Impedance Ratio, RF Transformer Can Be Made of 25 , Semi Rigid Coax, 47 - 52 Mils O.D. 1:9 Impedance Ratio, RF Transformer. Can Be Made of 15 - 18 , Semi Rigid Coax, 62 - 90 Mils O.D. NOTE: For stability, the input transformer T1 should be loaded NOTE: with ferrite toroids or beads to increase the common NOTE: mode inductance. For operation below 100 MHz. The NOTE: same is required for the output transformer. Board material 062 fiberglass (G10), r 5, Two sided, 1 oz. Copper. ^ Unless otherwise noted, all chip capacitors are ATC Type 100 or Equivalent. Figure 13. 225 MHz Test Circuit MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF275G 5.2-205 L5 + B1 C17 R1 C16 C15 C14 L3 C19 C18 C22 L6 BEADS 1-3 C5 W4 C1 C2 W1 L1 W2 C7 W3 C6 C3 C4 C10 C11 C9 C12 C13 C8 L2 L4 BEADS 4-6 C20 MRF275G B2 C21 JL (Not to Scale) Figure 14. MRF275G Component Location (500 MHz) MRF275G JL (Scale 1:1) Figure 15. MRF275G Circuit Board Photo Master (500 MHz) (Reduced 18% in printed data book, DL110/D) MRF275G 5.2-206 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOTE: S-Parameter data represents measurements taken from one chip only. Table 1. Common Source S-Parameters (VDS = 12 V, ID = 4.5 A) S11 f MHz |S11| 30 0.822 40 S21 S12 S22 AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA |S21| |S12| -172 6.34 91 0.027 3 0.946 -173 0.846 -173 4.32 81 0.027 -6 0.859 -172 50 0.842 -174 3.62 79 0.027 -8 0.863 -175 60 0.838 -175 3.03 79 0.027 -5 0.923 -177 70 0.836 -175 2.76 80 0.028 -3 1.010 -178 80 0.841 -176 2.43 78 0.029 -4 1.080 -178 90 0.849 -176 2.19 74 0.029 -7 1.150 -176 100 0.857 -176 1.89 68 0.028 -13 1.110 -176 |S22| 110 0.864 -176 1.66 63 0.026 -19 1.050 -177 120 0.868 -176 1.43 60 0.024 -19 0.958 -175 130 0.871 -176 1.25 59 0.023 -19 0.905 -176 140 0.874 -176 1.15 59 0.023 -17 0.914 -177 150 0.876 -176 1.11 59 0.023 -16 0.969 -178 160 0.880 -176 1.06 59 0.023 -17 1.060 -178 170 0.885 -177 1.01 55 0.023 -18 1.130 -177 180 0.891 -177 0.96 51 0.023 -23 1.190 -178 190 0.896 -177 0.87 45 0.022 -26 1.140 -179 200 0.900 -177 0.77 43 0.020 -26 1.050 -177 210 0.904 -177 0.69 42 0.018 -25 0.958 -176 220 0.907 -177 0.63 43 0.017 -23 0.924 -175 230 0.909 -177 0.60 43 0.018 -23 0.981 -178 240 0.912 -178 0.58 44 0.017 -22 0.981 -180 250 0.915 -178 0.58 42 0.017 -20 1.040 -179 260 0.918 -178 0.56 40 0.016 -20 1.150 -180 270 0.922 -178 0.54 34 0.015 -24 1.170 179 280 0.925 -179 0.49 32 0.014 -27 1.130 -180 290 0.927 -179 0.43 28 0.013 -27 1.010 -178 300 0.930 -179 0.41 30 0.013 -23 0.964 -178 310 0.932 -179 0.40 32 0.013 -14 0.936 -178 320 0.934 -180 0.39 31 0.012 -9 0.948 180 330 0.936 -180 0.35 32 0.011 -9 1.000 180 340 0.938 180 0.38 31 0.011 -12 1.070 178 350 0.941 180 0.35 28 0.011 -12 1.100 180 360 0.943 179 0.33 23 0.011 -10 1.120 -180 370 0.944 179 0.30 21 0.011 -4 1.080 180 380 0.945 179 0.29 21 0.009 1 1.020 180 390 0.947 179 0.28 22 0.008 3 0.966 -180 400 0.948 179 0.26 25 0.008 4 0.936 -179 410 0.949 178 0.26 24 0.010 5 1.010 179 420 0.951 178 0.25 25 0.010 11 1.040 178 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF275G 5.2-207 Table 1. Common Source S-Parameters (VDS = 12 V, ID = 4.5 A) continued S11 S21 S12 S22 AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA f MHz |S11| |S21| |S12| |S22| 430 0.952 178 0.25 22 0.010 19 1.080 177 440 0.953 177 0.24 19 0.009 22 1.100 178 450 0.955 177 0.24 16 0.008 21 1.100 179 460 0.956 177 0.21 15 0.008 11 1.080 177 470 0.956 177 0.20 16 0.009 16 0.992 178 480 0.957 176 0.19 18 0.010 27 0.975 179 490 0.958 176 0.19 18 0.010 40 0.974 178 500 0.960 176 0.19 19 0.010 46 1.010 177 600 0.956 175 0.18 12 0.007 49 0.940 175 700 0.958 172 0.11 14 0.018 61 0.989 173 800 0.962 170 0.10 12 0.029 51 0.967 172 900 0.965 168 0.08 16 0.021 72 0.973 170 1000 0.964 165 0.07 12 0.021 57 1.010 168 Table 2. Common Source S-Parameters (VDS = 24 V, ID = 0.35 mA) AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA S11 f MHz |S11| 30 0.829 40 0.858 50 S21 S22 |S21| |S12| -170 9.20 92 0.023 4 0.915 -171 -172 6.30 83 0.022 -4 0.834 -170 0.852 -173 5.28 80 0.023 -6 0.836 -174 60 0.846 -174 4.42 80 0.023 -3 0.892 -175 70 0.843 -175 4.01 81 0.024 -1 0.978 -177 80 0.847 -175 3.53 80 0.024 -2 1.050 -177 90 0.855 -175 3.18 76 0.024 -5 1.110 -176 100 0.865 -176 2.75 70 0.023 -10 1.080 -175 110 0.872 -176 2.43 65 0.022 -16 1.020 -176 120 0.874 -176 2.10 62 0.020 -16 0.932 -174 130 0.876 -176 1.84 61 0.019 -15 0.882 -175 140 0.878 -176 1.70 61 0.019 -14 0.889 -176 150 0.880 -176 1.63 61 0.019 -13 0.943 -177 160 0.883 -176 1.56 61 0.019 -13 1.030 -177 170 0.888 -177 1.49 58 0.019 -14 1.100 -176 180 0.894 -177 1.42 53 0.019 -18 1.160 -176 190 0.899 -177 1.29 47 0.018 -22 1.120 -177 200 0.902 -177 1.14 45 0.017 -24 1.030 -176 210 0.905 -177 1.02 44 0.015 -23 0.941 -175 220 0.907 -177 0.94 46 0.015 -19 0.903 -174 230 0.909 -178 0.89 45 0.015 -16 0.957 -177 240 0.912 -178 0.87 46 0.014 -15 0.961 -179 250 0.915 -178 0.86 44 0.014 -15 1.020 -178 260 0.918 -178 0.83 42 0.014 -17 1.120 -178 270 0.922 -178 0.80 36 0.013 -19 1.140 -180 MRF275G 5.2-208 S12 |S22| MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Table 2. Common Source S-Parameters (VDS = 24 V, ID = 0.35 mA) continued S11 S21 S12 S22 AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA f MHz |S11| 280 0.925 290 |S21| |S12| |S22| -179 0.73 34 0.013 -20 1.110 -179 0.927 -179 0.65 32 0.011 -18 0.994 -177 300 0.929 -179 0.62 32 0.011 -15 0.948 -177 310 0.931 -179 0.60 34 0.010 -9 0.916 -177 320 0.932 -180 0.57 33 0.010 -6 0.934 -180 330 0.934 -180 0.53 34 0.010 -4 0.985 -180 340 0.937 180 0.56 33 0.010 -2 1.050 179 350 0.939 180 0.53 30 0.010 0 1.090 -179 360 0.941 179 0.50 25 0.010 0 1.110 -178 370 0.943 179 0.46 23 0.009 0 1.080 -179 380 0.944 179 0.44 22 0.009 2 1.010 -179 390 0.945 179 0.41 24 0.008 8 0.956 -179 400 0.946 178 0.40 27 0.008 16 0.926 -178 410 0.947 178 0.38 26 0.009 20 1.000 -180 420 0.949 178 0.38 26 0.009 22 1.040 179 430 0.950 178 0.37 23 0.009 25 1.070 179 440 0.952 177 0.36 21 0.009 26 1.090 180 450 0.953 177 0.36 18 0.009 28 1.090 -180 460 0.954 177 0.31 17 0.009 24 1.070 178 470 0.955 177 0.30 17 0.009 29 0.990 179 480 0.956 176 0.29 19 0.009 36 0.963 -179 490 0.957 176 0.29 20 0.010 45 0.959 180 500 0.958 176 0.28 20 0.010 50 0.996 178 600 0.956 175 0.24 12 0.006 90 0.924 176 700 0.959 172 0.16 13 0.019 63 0.986 174 800 0.963 170 0.14 10 0.023 63 0.963 173 900 0.968 168 0.12 11 0.026 84 0.967 171 1000 0.969 165 0.09 7 0.025 70 1.000 169 Table 3. Common Source S-Parameters (VDS = 28 V, ID = 0.39 mA) S11 f MHz |S11| 30 0.834 40 50 S21 S12 S22 AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAA |S21| |S12| -169 10.08 93 0.021 4 0.807 -171 0.863 -172 6.91 83 0.021 -4 0.828 -170 0.857 -173 5.79 81 0.021 -5 0.830 -173 60 0.851 -174 4.86 81 0.022 -3 0.883 -175 70 0.848 -175 4.41 82 0.022 -1 0.970 -177 80 0.852 -175 3.87 80 0.022 -1 1.040 -177 |S22| 90 0.860 -175 3.49 77 0.023 -5 1.100 -176 100 0.869 -176 3.03 71 0.022 -9 1.070 -175 110 0.876 -176 2.68 66 0.021 -14 1.010 -176 120 0.878 -176 2.31 63 0.019 -14 0.923 -174 130 0.879 -176 2.03 62 0.018 -15 0.876 -175 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF275G 5.2-209 Table 3. Common Source S-Parameters (VDS = 28 V, ID = 0.39 mA) continued S11 S21 S12 S22 AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA AAAAA AAAAA AAAA AAAAA AAAAA AAAA AAAAA AAAA AAAAA f MHz |S11| 140 0.881 150 0.883 160 |S21| |S12| |S22| -176 1.87 62 0.018 -13 0.884 -176 -176 1.79 62 0.018 -11 0.934 -177 0.886 -177 1.72 62 0.018 -11 1.020 -177 170 0.890 -177 1.64 58 0.018 -12 1.090 -176 180 0.896 -177 1.56 54 0.018 -16 1.150 -176 190 0.901 -177 1.42 48 0.018 -21 1.110 -177 200 0.904 -177 1.26 46 0.017 -19 1.030 -176 210 0.907 -177 1.13 45 0.015 -14 0.938 -175 220 0.908 -177 1.03 47 0.013 -13 0.897 -174 230 0.910 -178 0.99 46 0.014 -15 0.948 -176 240 0.912 -178 0.96 47 0.014 -13 0.956 -179 250 0.916 -178 0.95 45 0.014 -10 1.020 -178 260 0.919 -178 0.93 42 0.013 -12 1.120 -178 270 0.922 -179 0.89 37 0.012 -15 1.140 -179 280 0.925 -179 0.81 35 0.012 -16 1.110 -178 290 0.927 -179 0.72 33 0.011 -16 0.988 -176 300 0.929 -179 0.69 33 0.011 -10 0.944 -177 310 0.931 -179 0.66 35 0.012 5 0.920 -177 320 0.933 -180 0.63 34 0.011 16 0.936 -180 330 0.934 -180 0.59 35 0.009 14 0.989 -180 340 0.937 180 0.62 34 0.009 3 1.050 180 350 0.939 180 0.59 31 0.010 4 1.080 -179 360 0.941 179 0.55 26 0.010 8 1.110 -178 370 0.943 179 0.51 24 0.009 11 1.070 -179 380 0.944 179 0.49 23 0.008 17 1.010 -178 390 0.945 179 0.46 25 0.008 24 0.949 -178 400 0.946 178 0.44 27 0.007 20 0.922 -178 410 0.947 178 0.43 26 0.010 19 0.995 -180 420 0.949 178 0.42 27 0.012 29 1.030 179 430 0.950 178 0.41 24 0.010 41 1.060 179 440 0.951 177 0.40 21 0.008 40 1.090 180 450 0.953 177 0.39 19 0.008 34 1.090 -180 460 0.953 177 0.35 17 0.009 26 1.070 178 470 0.954 177 0.33 18 0.010 30 0.983 179 480 0.955 176 0.32 19 0.012 43 0.964 -180 490 0.956 176 0.32 20 0.012 60 0.956 179 500 0.957 176 0.31 21 0.010 65 0.993 178 600 0.955 174 0.26 13 0.012 67 0.926 176 700 0.958 172 0.18 12 0.018 64 0.984 174 800 0.963 170 0.15 9 0.020 89 0.961 173 900 0.966 168 0.13 9 0.028 81 0.967 171 1000 0.968 165 0.10 6 0.033 73 0.997 169 MRF275G 5.2-210 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Figure 16. MRF275G Test Fixture RF POWER MOSFET CONSIDERATIONS MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between the terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to- source (Cgs). The PN junction formed during the fabrication of the MOSFET results in a junction capacitance from drain- to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case the numbers are lower. However, neither method represents the actual operating conditions in RF applications. DRAIN Cgd GATE Cds Cgs Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd SOURCE The Ciss given in the electrical characteristics table was measured using method 2 above. It should be noted that Ciss, Coss, Crss are measured at zero drain current and are provided for general information about the device. They are not RF design parameters and no attempt should be made to use them as such. DRAIN CHARACTERISTICS One figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, VDS(on), occurs in the linear region of the output characteristic and is specified under specific test conditions for gate-source voltage and drain current. For MOSFETs, VDS(on) has a positive temperature coefficient and constitutes an important design consideration at high temperatures, because it contributes to the power dissipation within the device. GATE CHARACTERISTICS The gate of the MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high -- on the order of 109 ohms -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage slightly in excess of the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating (or any of the maximum ratings on the front page). Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of this device are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate-to-source impedance low also helps damp transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate-drain capacitance. If the gate-to-source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF275G 5.2-211 may be large enough to exceed the gate-threshold voltage and turn the device on. HANDLING CONSIDERATIONS When shipping, the devices should be transported only in antistatic bags or conductive foam. Upon removal from the packaging, careful handling procedures should be adhered to. Those handling the devices should wear grounding straps and devices not in the antistatic packaging should be kept in metal tote bins. MOSFETs should be handled by the case and not by the leads, and when testing the device, all leads should make good electrical contact before voltage is applied. As a final note, when placing the FET into the system it is designed for, soldering should be done with grounded equipment. DESIGN CONSIDERATIONS The MRF275G is a RF power N-channel enhancement mode field-effect transistor (FETs) designed for HF, VHF and UHF power amplifier applications. Motorola RF MOSFETs feature a vertical structure with a planar design. Motorola Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs. The major advantages of RF power FETs include high gain, low noise, simple bias systems, relative immunity from MRF275G 5.2-212 thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. Power output can be varied over a wide range with a low power dc control signal. DC BIAS The MRF275G is an enhancement mode FET and, therefore, does not conduct when drain voltage is applied. Drain current flows when a positive voltage is applied to the gate. RF power FETs require forward bias for optimum performance. The value of quiescent drain current (IDQ) is not critical for many applications. The MRF275G was characterized at IDQ = 100 mA, each side, which is the suggested minimum value of IDQ. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may be just a simple resistive divider network. Some applications may require a more elaborate bias system. GAIN CONTROL Power output of the MRF275G may be controlled from its rated value down to zero (negative gain) by varying the dc gate voltage. This feature facilitates the design of manual gain control, AGC/ALC and modulation systems. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N-Channel Enhancement-Mode 100 W, 28 V, 500 MHz N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single ended circuits at frequencies to 500 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. * Guaranteed Performance @ 500 MHz, 28 Vdc Output Power -- 100 Watts Power Gain -- 8.8 dB Typ Efficiency -- 55% Typ D * 100% Ruggedness Tested At Rated Output Power * Low Thermal Resistance * Low Crss -- 17 pF Typ @ VDS = 28 Volts * S-Parameters Available for Download into Frequency Domain Simulators. See http://mot-sps.com/rf/designtds/ G CASE 333-04, STYLE 2 S MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS 20 Vdc Drain Current -- Continuous ID 13 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 270 1.54 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Symbol Max Unit RJC 0.65 C/W Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) IDSS -- -- 2.5 mAdc Gate-Body Leakage Current (VGS = 20 V, VDS = 0) IGSS -- -- 1.0 Adc OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 50 mA) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 2 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF275L 5.2-213 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) VGS(th) 1.5 2.5 4.5 Vdc Drain-Source On-Voltage (VGS = 10 V, ID = 5.0 A) VDS(on) 0.5 0.9 1.5 Vdc Forward Transconductance (VDS = 10 V, ID = 2.5 A) gfs 3.0 3.75 -- mhos Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Ciss -- 135 -- pF Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Coss -- 140 -- pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz) Crss -- 17 -- pF Common Source Power Gain (VDD = 28 Vdc, Pout = 100 W, f = 500 MHz, IDQ = 100 mA) Gps 7.5 8.8 -- dB Drain Efficiency (VDD = 28 Vdc, Pout = 100 W, f = 500 MHz, IDQ = 100 mA) 50 55 -- % Electrical Ruggedness (VDD = 28 Vdc, Pout = 100 W, f = 500 MHz, IDQ = 100 mA, VSWR 10:1 at all Phase Angles) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL CHARACTERISTICS No Degradation in Output Power C12 +VGG C13 +28 V RFC2 R1 C1 R2 RFC3 C11 C2 C14 + C15 RFC1 RF INPUT C10 Z3 RF OUTPUT Z4 C3 Z1 C4 C1, C11, C14 C2 C3, C10 C4, C6, C8, C9 C5 C7 C12, C13 C15 Z2 C5 C6 C7 C8 C9 DUT 0.1 F, Ceramic Capacitor 240 pF, ATC Type Chip Capacitor 270 pF, ATC Type Chip Capacitor 1-20 pF, Trimmer Capacitor, Johansen 24 pF, Mini-Unelco Type Capacitor 24 pF, Mini-Unelco Type Capacitor 680 pF, Feedthru Capacitors 10 F, 50 V, Electrolytic Capacitor RFC1 RFC2, RFC3 Z1, Z2, Z3 Z4 Board Material 8 Turns AWG #18, 0.25 I.D., Enameled Ferroxcube VK200 19/4B 0.250 x 0.800, Microstrip Line 0.250 x 0.400, Microstrip Line 0.250 x 1.25, Microstrip Line 0.062 Glass Teflon, 2 oz. Copper, Double Clad Copper Board, r = 2.55 Figure 1. 500 MHz Test Circuit MRF275L 5.2-214 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA TYPICAL CHARACTERISTICS 100 160 90 140 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) f = 225 MHz 400 MHz 120 500 MHz 100 80 60 40 VDD = 28 V IDQ = 100 mA 20 80 70 60 50 40 30 10 0 2 0 4 8 6 10 14 12 Pin, INPUT POWER (WATTS) 18 16 VDS = 28 V IDQ = 100 mA Pin = Constant f = 500 MHz 20 0 -10 20 Figure 2. Output Power versus Input Power 8 Pout , OUTPUT POWER (WATTS) I D , DRAIN CURRENT (AMPS) 2 4 140 VDS = 10 V VGS(th) = 2.5 V 9 7 6 5 4 3 2 IDQ = 100 mA f = 500 MHz 120 100 Pin = 13.5 W 80 10 W 60 6W 40 20 1 0.5 0 1.5 2.5 3.5 1 3 4 2 VGS, GATE-SOURCE VOLTAGE (VOLTS) 4.5 0 12 5 Figure 4. Drain Current versus Gate Voltage (Transfer Characteristics) 14 24 22 16 18 20 VDD, SUPPLY VOLTAGE (VOLTS) 26 28 Figure 5. Output Power versus Supply Voltage 160 160 IDQ = 100 mA f = 400 MHz 140 120 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) -6 -4 -2 0 VGS, GATE-SOURCE VOLTAGE (VOLTS) Figure 3. Output Power versus Gate Voltage 10 0 -8 Pin = 14 W 100 80 10 W 60 6W 40 140 IDQ = 100 mA f = 225 MHz Pin = 8 W 120 4W 100 80 2W 60 40 20 20 0 12 14 16 18 20 22 24 VDD, SUPPLY VOLTAGE (VOLTS) 26 28 Figure 6. Output Power versus Supply Voltage MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 0 12 14 16 18 20 22 24 VDD, SUPPLY VOLTAGE (VOLTS) 26 28 Figure 7. Output Power versus Supply Voltage MRF275L 5.2-215 TYPICAL CHARACTERISTICS 100 I D , DRAIN CURRENT (AMPS) 1000 C, CAPACITANCE (pF) Coss 100 Ciss Crss 10 VGS = 0 V f = 1.0 MHz TC = 25C 1 0 5 15 20 25 10 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 1 30 Figure 8. Capacitance versus Drain-Source Voltage MRF275L 5.2-216 10 1 10 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 100 Figure 9. DC Safe Operating Area MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA f = 500 MHz Zo = 10 Zin 400 f = 500 MHz ZOL* Zo = 10 225 400 225 VDD = 28 V, IDQ = 100 mA, Pout = 100 W f Zin (MHz) Ohms VDD = 28 V, IDQ = 100 mA, Pout = 100 W f ZOL* (MHz) Ohms 225 1.1 - j1.7 225 1.6 - j1.3 400 1.08 - j1.5 400 0.9 - j0.5 500 1.0 - j0.5 500 1.0 - j0.2 ZOL* = Conjugate of the optimum load impedance into which the device operates at a given output power, voltage and frequency. Figure 10. Series Equivalent Input/Output Impedance MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF275L 5.2-217 RFC1 R1 BIAS C4 C5 C10 R2 C11 L4 C1 L2 RF INPUT +28 Vdc + L3 C9 RF OUTPUT L1 C2 C3 C6 C7 C8 DUT C1, C2, C8 C3, C7 C4 C5 C6 C9 C10 C11 Arco 463 or Equivalent 25 pF, Unelco Capacitor 1000 pF, Chip Capacitor 0.01 F, Chip Capacitor 250 pF, Unelco Capacitor Arco 462 or Equivalent 1000 pF, ATC Chip Capacitor 10 F, 100 V, Electrolytic Capacitor L1 Hairpin Inductor #18 Wire L3 Hairpin Inductor #16 Wire 0.45 0.32 0.2 0.15 L2 Stripline Inductor 0.200 x 0.500 L4 RFC1 R1 R2 2 Turns #16 Wire, 5/16 ID VK200-4B 1.0 k, 1/4 W Resistor 100 Resistor Figure 11. 225 MHz Test Circuit C11 L3 C12 C13 C14 +v BIAS GND C9 .01 mf RF INPUT R2 L2 C8 R1 Z2 C1 RF OUTPUT Z3 L1 Z1 C2 C3 C4 DUT C1, C8 C2, C4, C6, C7 C3 C5 C9, C12 C11, C14 C13 270 pF, ATC Chip Capacitor 1.0 - 20 pF, Trimmer Capacitor 15 pF, Mini Unelco Capacitor 47 pF, Mini Unelco Capacitor 0.1 F, Ceramic Capacitor 680 pF, Feed Thru Capacitor 50 F, Tantalum Capacitor L1 C5 Hairpin Inductor #18 Wire 0.25 0.4 L2 L3 12 Turns #18 Wire, 0.450 ID Ferroxcube VK200 20/4B C6 C7 R1 R2 R3 Z1 Z2 Z3 10 k, 1/4 W Resistor 1 k, 1/4 W Resistor 1.5 k, 1/4 W Resistor 0.950 x 0.250, Microstrip Line 1.25 x 0.250, Microstrip Line 0.300 x 0.250, Microstrip Line Board Material 0.062 Teflon, Fiberglass, 1 oz. Copper, Clad Both Sides, r = 2.56 Figure 12. 400 MHz Test Circuit MRF275L 5.2-218 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA + RFC2 C15 C12 + C13 C1 + R1 C2 C11 BEADS C14 RFC3 RFC1 R2 C5 C3 C4 C6 C7 C10 C8 C9 (Not to Scale) Figure 13. MRF275L Component Location (500 MHz) MRF275L (Scale 1:1) Figure 14. MRF275L Test Circuit Photomaster (Reduced 18% in printed data book, DL110/D) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF275L 5.2-219 AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA Table 1. Common Source S-Parameters (VDS = 12.5 V, ID = 4.5 A) S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 30 0.936 -176 6.22 87 0.010 21 0.944 -179 40 0.938 -178 4.28 87 0.010 24 0.930 -177 50 0.937 -178 3.65 83 0.010 29 0.922 179 60 0.937 -179 2.99 83 0.011 34 0.920 179 70 0.938 -179 2.54 81 0.011 39 0.917 179 80 0.938 -179 2.18 80 0.012 42 0.913 179 90 0.939 -180 1.94 78 0.012 44 0.909 180 100 0.939 -180 1.77 77 0.013 47 0.913 -180 110 0.939 180 1.57 77 0.015 50 0.916 -179 120 0.940 180 1.45 74 0.015 54 0.914 179 130 0.940 179 1.34 75 0.016 57 0.935 180 140 0.940 179 1.26 72 0.016 58 0.943 180 150 0.940 179 1.19 71 0.017 57 0.951 178 160 0.941 179 1.09 70 0.019 58 0.943 179 170 0.941 179 1.01 69 0.019 62 0.940 180 180 0.941 179 0.956 68 0.021 64 0.948 179 190 0.941 178 0.912 67 0.022 65 0.957 180 200 0.942 178 0.860 65 0.022 65 0.941 178 210 0.942 178 0.816 64 0.023 65 0.931 178 220 0.943 178 0.779 63 0.025 66 0.922 178 230 0.943 177 0.717 60 0.027 67 0.965 177 240 0.943 177 0.709 61 0.026 68 0.927 176 250 0.944 177 0.674 60 0.026 70 0.924 178 260 0.944 177 0.645 58 0.028 69 0.930 179 270 0.944 177 0.627 57 0.030 70 0.933 178 280 0.945 176 0.608 58 0.032 70 0.940 177 290 0.946 176 0.580 54 0.031 71 0.941 175 300 0.946 176 0.569 56 0.033 71 0.945 176 310 0.946 176 0.539 55 0.033 72 0.953 178 320 0.947 175 0.512 54 0.035 71 0.952 177 330 0.948 175 0.483 51 0.037 72 0.927 176 340 0.947 175 0.477 52 0.038 72 0.921 176 350 0.947 175 0.466 51 0.039 75 0.929 178 360 0.947 175 0.459 51 0.040 73 0.963 177 370 0.948 174 0.441 50 0.043 71 0.968 175 380 0.949 174 0.428 49 0.044 72 0.937 175 390 0.949 174 0.417 49 0.045 74 0.907 176 400 0.949 174 0.409 47 0.044 77 0.912 177 410 0.950 173 0.390 46 0.046 74 0.962 175 420 0.950 173 0.377 45 0.047 71 0.971 174 430 0.950 173 0.369 45 0.050 72 0.948 176 440 0.951 173 0.368 47 0.052 74 0.953 176 MRF275L 5.2-220 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA Table 1. Common Source S-Parameters (VDS = 12.5 V, ID = 4.5 A) (continued) S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 450 0.951 172 0.371 42 0.053 76 0.943 175 460 0.952 172 0.347 44 0.053 72 0.965 172 470 0.952 172 0.331 43 0.053 71 0.933 173 480 0.953 172 0.323 43 0.056 71 0.936 173 490 0.953 171 0.317 41 0.059 72 0.965 173 500 0.954 171 0.306 41 0.061 74 0.963 173 600 0.957 168 0.267 35 0.069 77 0.941 171 700 0.965 165 0.224 35 0.090 70 0.958 169 800 0.967 160 0.219 32 0.099 67 0.937 164 900 0.980 156 0.214 33 0.114 69 0.943 164 1000 0.986 151 0.218 34 0.146 67 0.955 162 AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA Table 2. Common Source S-Parameters (VDS = 24 V, ID = 4.5 A) S11 f MHz |S11| 30 0.914 40 0.918 50 S21 S12 S22 |S21| |S12| |S22| -174 9.08 87 0.011 19 0.882 -178 -176 6.29 86 0.011 22 0.876 -176 0.918 -177 5.31 82 0.011 26 0.871 180 60 0.917 -177 4.35 82 0.012 29 0.871 -179 70 0.919 -178 3.70 79 0.012 32 0.865 -179 80 0.919 -178 3.16 77 0.013 37 0.857 -179 90 0.920 -179 2.81 75 0.013 42 0.851 -180 100 0.921 -179 2.55 74 0.014 46 0.863 -179 110 0.922 -179 2.27 73 0.014 47 0.876 -178 120 0.923 -179 2.08 70 0.015 49 0.867 -179 130 0.923 -180 1.92 70 0.016 51 0.880 -178 140 0.924 -180 1.78 67 0.017 55 0.880 -179 150 0.925 -180 1.68 65 0.018 58 0.904 179 160 0.926 180 1.53 64 0.018 60 0.901 -180 170 0.927 180 1.42 62 0.018 61 0.900 -179 180 0.928 180 1.34 62 0.020 61 0.901 -179 190 0.929 179 1.28 60 0.021 63 0.906 -179 200 0.930 179 1.19 58 0.022 65 0.892 179 210 0.931 179 1.12 56 0.022 67 0.902 178 220 0.932 179 1.06 55 0.023 68 0.903 179 230 0.933 179 0.988 53 0.024 67 0.931 179 240 0.934 178 0.960 53 0.025 69 0.889 179 250 0.934 178 0.910 52 0.026 73 0.877 180 260 0.935 178 0.866 50 0.026 74 0.895 180 270 0.936 178 0.838 49 0.027 74 0.908 180 280 0.937 177 0.803 49 0.029 71 0.923 179 290 0.939 177 0.766 46 0.030 72 0.915 177 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF275L 5.2-221 AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA Table 2. Common Source S-Parameters (VDS = 24 V, ID = 4.5 A) (continued) S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 300 0.939 177 0.744 46 0.032 76 0.907 178 310 0.939 177 0.702 46 0.032 81 0.908 180 320 0.940 176 0.660 45 0.031 81 0.913 178 330 0.941 176 0.623 41 0.031 75 0.909 177 340 0.942 176 0.613 42 0.035 71 0.910 178 350 0.943 176 0.599 41 0.039 78 0.905 -180 360 0.943 175 0.585 41 0.040 83 0.913 179 370 0.943 175 0.556 39 0.037 85 0.924 176 380 0.944 175 0.534 38 0.035 80 0.922 175 390 0.944 175 0.512 38 0.037 73 0.907 176 400 0.946 174 0.503 37 0.043 76 0.906 179 410 0.948 174 0.482 36 0.049 81 0.944 177 420 0.948 174 0.464 35 0.047 87 0.940 176 430 0.947 174 0.450 36 0.040 88 0.912 176 440 0.947 173 0.440 36 0.039 79 0.947 176 450 0.948 173 0.445 32 0.047 73 0.944 177 460 0.951 173 0.414 32 0.057 75 0.959 174 470 0.952 173 0.397 32 0.057 86 0.913 176 480 0.951 172 0.387 33 0.050 95 0.908 175 490 0.950 172 0.376 31 0.042 90 0.941 174 500 0.950 172 0.361 31 0.044 74 0.963 175 600 0.957 168 0.287 24 0.073 75 0.932 172 700 0.965 164 0.231 24 0.091 70 0.952 169 800 0.966 160 0.216 23 0.091 67 0.928 163 900 0.979 156 0.205 27 0.112 69 0.930 164 1000 0.981 150 0.206 29 0.146 58 0.947 162 AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA Table 3. Common Source S-Parameters (VDS = 28 V, ID = 4.5 A) S11 f MHz |S11| 30 0.910 40 50 S21 S12 S22 |S21| |S12| |S22| -173 9.76 87 0.011 17 0.872 -177 0.913 -175 6.73 86 0.011 17 0.860 -174 0.913 -176 5.69 81 0.011 21 0.849 -179 60 0.913 -177 4.66 81 0.012 26 0.846 -178 70 0.915 -177 3.97 78 0.012 31 0.853 -179 80 0.916 -178 3.39 76 0.012 33 0.858 -178 90 0.916 -178 3.01 74 0.012 34 0.853 -178 100 0.917 -178 2.73 73 0.013 36 0.851 -177 110 0.918 -179 2.42 72 0.014 41 0.849 -177 120 0.919 -179 2.22 68 0.014 48 0.853 -178 130 0.920 -179 2.05 68 0.014 52 0.879 -178 140 0.921 -179 1.90 66 0.014 52 0.894 -178 150 0.922 -180 1.79 64 0.015 51 0.898 -178 MRF275L 5.2-222 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA AAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAAA Table 3. Common Source S-Parameters (VDS = 28 V, ID = 4.5 A) (continued) S11 f MHz |S11| 160 0.923 170 0.924 180 S21 S12 S22 |S21| |S12| |S22| -180 1.63 63 0.016 53 0.880 -177 -180 1.50 61 0.017 58 0.890 -178 0.925 180 1.42 60 0.019 62 0.904 -178 190 0.926 180 1.35 58 0.019 64 0.922 -179 200 0.928 179 1.26 56 0.019 63 0.914 -179 210 0.929 179 1.19 54 0.020 62 0.897 -179 220 0.930 179 1.12 53 0.022 64 0.881 -179 230 0.932 179 1.04 51 0.024 67 0.907 180 240 0.932 179 1.01 51 0.024 69 0.892 179 250 0.933 178 0.955 49 0.024 70 0.910 -180 260 0.934 178 0.912 47 0.025 70 0.912 -178 270 0.936 178 0.882 46 0.027 71 0.904 -178 280 0.936 178 0.842 46 0.029 72 0.901 -180 290 0.938 177 0.798 43 0.028 71 0.920 177 300 0.939 177 0.770 44 0.030 71 0.930 178 310 0.939 177 0.731 43 0.032 72 0.934 -179 320 0.941 177 0.690 42 0.035 74 0.939 -180 330 0.942 176 0.655 39 0.036 76 0.895 180 340 0.942 176 0.639 40 0.035 75 0.892 179 350 0.942 176 0.613 39 0.036 75 0.906 -180 360 0.943 175 0.601 38 0.040 71 0.945 179 370 0.945 175 0.577 36 0.045 71 0.960 178 380 0.946 175 0.555 35 0.047 74 0.928 178 390 0.947 175 0.531 35 0.045 79 0.893 178 400 0.946 174 0.518 34 0.042 80 0.892 179 410 0.947 174 0.492 33 0.044 72 0.948 176 420 0.948 174 0.472 32 0.049 67 0.960 176 430 0.950 173 0.462 32 0.056 71 0.936 179 440 0.951 173 0.455 32 0.058 78 0.945 179 450 0.951 173 0.460 30 0.054 82 0.920 177 460 0.950 173 0.424 30 0.050 73 0.951 173 470 0.950 172 0.400 29 0.053 65 0.937 174 480 0.952 172 0.389 29 0.063 65 0.941 175 490 0.954 172 0.382 27 0.071 72 0.960 175 500 0.955 172 0.367 27 0.069 80 0.954 176 600 0.958 168 0.284 22 0.071 80 0.935 172 700 0.967 164 0.226 22 0.088 71 0.950 169 800 0.967 160 0.211 22 0.096 67 0.929 164 900 0.979 156 0.197 26 0.116 69 0.929 165 1000 0.978 150 0.200 29 0.139 67 0.944 163 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF275L 5.2-223 RF POWER MOSFET CONSIDERATIONS MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between the terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to- source (Cgs). The PN junction formed during the fabrication of the FET results in a junction capacitance from drain-to- source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case the numbers are lower. However, neither method represents the actual operating conditions in RF applications. DRAIN Cgd GATE Cds Cgs Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd SOURCE DRAIN CHARACTERISTICS One figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, VDS(on), occurs in the linear region of the output characteristic and is specified under specific test conditions for gate-source voltage and drain current. For MOSFETs, VDS(on) has a positive temperature coefficient and constitutes an important design consideration at high temperatures, because it contributes to the power dissipation within the device. GATE CHARACTERISTICS The gate of the FET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high -- on the order of 109 ohms -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage slightly in excess of the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended. MRF275L 5.2-224 Using a resistor to keep the gate-to-source impedance low also helps damp transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate-drain capacitance. If the gate-to-source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate-threshold voltage and turn the device on. HANDLING CONSIDERATIONS When shipping, the devices should be transported only in antistatic bags or conductive foam. Upon removal from the packaging, careful handling procedures should be adhered to. Those handling the devices should wear grounding straps and devices not in the antistatic packaging should be kept in metal tote bins. MOSFETs should be handled by the case and not by the leads, and when testing the device, all leads should make good electrical contact before voltage is applied. As a final note, when placing the FET into the system it is designed for, soldering should be done with a grounded iron. DESIGN CONSIDERATIONS The MRF275L is a RF power N-channel enhancement mode field-effect transistor (FETs) designed for HF, VHF and UHF power amplifier applications. Motorola FETs feature a vertical structure with a planar design. Motorola Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs. The major advantages of RF power FETs include high gain, low noise, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. Power output can be varied over a wide range with a low power dc control signal. DC BIAS The MRF275L is an enhancement mode FET and, therefore, does not conduct when drain voltage is applied. Drain current flows when a positive voltage is applied to the gate. RF power FETs require forward bias for optimum performance. The value of quiescent drain current (IDQ) is not critical for many applications. The MRF275L was characterized at IDQ = 100 mA, each side, which is the suggested minimum value of IDQ. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may be just a simple resistive divider network. Some applications may require a more elaborate bias system. GAIN CONTROL Power output of the MRF275L may be controlled from its rated value down to zero (negative gain) by varying the dc gate voltage. This feature facilitates the design of manual gain control, AGC/ALC and modulation systems. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF281SR1 MRF281ZR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station applications at frequencies from 1000 to 2500 MHz. Characterized for operation Class A and Class AB at 26 volts in commercial and industrial applications. * Specified Two-Tone Performance @ 1930 and 2000 MHz, 26 Volts Output Power = 4 Watts PEP Power Gain = 11 dB Efficiency = 30% Intermodulation Distortion = -29 dBc * Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 4 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * S-Parameter Characterization at High Bias Levels * Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel. * LDMOS Models Available at http://www.motorola.com/semiconductors/rf/models/ 2000 MHz, 4 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 458B-02, STYLE 1 (MRF281SR1) CASE 458C-02, STYLE 1 (MRF281ZR1) MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS 20 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 20 0.115 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Symbol Max Unit RJC 5.74 C/W Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 74 -- Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) IDSS -- -- 10 Adc Gate-Source Leakage Current (VGS = 20 Vdc, VDS = 0) IGSS -- -- 1 Adc Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 10 Adc) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF281SR1 MRF281ZR1 5.2-225 ELECTRICAL CHARACTERISTICS continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Gate Threshold Voltage (VDS = 10 Vdc, ID = 20 Adc) VGS(th) 2.4 3.2 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 25 mAdc) VGS(q) 3 4.1 5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 0.1 A) VDS(on) 0.18 0.24 0.30 Vdc Input Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Ciss -- 5.5 -- pF Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Coss -- 3.3 -- pF Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Crss -- 0.17 -- pF Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Gps 11 12.5 -- dB Drain Efficiency (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) 30 33 -- % Input Return Loss (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IRL 10 16 -- dB Intermodulation Distortion (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IMD -- -31 -29 dBc Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Gps 11 12.5 -- dB 30 -- -- % Input Return Loss (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) IRL 10 16 -- dB Intermodulation Distortion (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) IMD -- -31 -- dBc Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 4 W CW, IDQ = 25 mA, f1 = 2000.0 MHz) Gps 10.5 12 -- dB Drain Efficiency (VDD = 26 Vdc, Pout = 4 W CW, IDQ = 25 mA, f1 = 2000.0 MHz) 40 44 -- % Output Mismatch Stress (VDD = 26 Vdc, Pout = 4 W CW, IDQ = 25 mA, f1 = 2000.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Test) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture) Drain Efficiency (VDD = 26 Vdc, Pout = 4 W, IDQ = 25 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) MRF281SR1 MRF281ZR1 5.2-226 No Degradation In Output Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA + j1 + j0.5 + j2 + j3 + j0.2 + j5 2.0 GHz + j10 Zo = 10 1.9 GHz 0.2 0.0 0.5 1 2 3 5 Zin 1.8 GHz 1.8 GHz 2.0 GHz 1.7 GHz - j0.2 - j10 f = 1.5 GHz - j5 1.6 GHz 1.9 GHz 1.7 GHz 1.6 GHz ZOL* f = 1.5 GHz - j3 - j2 - j0.5 - j1 VDD = 26 V, IDQ = 25 mA, Pout = 4 W (PEP) f MHz Zin ZOL* Zin 1500 3.15 - j5.3 15.5 - j13.6 1600 3.1 - j3.8 14.7 - j12.5 1700 3.1 - j2.3 14.0 - j11.7 1800 3.1 - j0.7 13.4 - j11.0 1900 3.1 + j0.9 12.8 - j10.1 2000 3.1 + j2.4 12.2 - j9.2 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at given output power, voltage, IMD, bias current and frequency. Input Matching Network Output Matching Network Device Under Test Z in Z * OL Figure 1. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF281SR1 MRF281ZR1 5.2-227 Table 1. Common Source S-Parameters at VDS = 26 Vdc, ID = 250 mAdc f GHz S11 |S11| S21 f dB f S12 |S12| f 0.1 .982 -28 18.9 160 .008 73 0.2 .947 -52 17.0 143 .015 0.3 .912 -73 15.0 129 .019 0.4 .886 -90 12.9 117 0.5 .859 -103 11.1 0.6 .854 -114 9.69 0.7 .841 -123 0.8 .837 -131 0.9 .838 1.0 1.1 S22 |S22| f .851 -13 58 .811 -25 45 .770 -33 .022 36 .741 -42 108 .022 28 .719 -47 100 .023 23 .718 -51 8.54 93 .022 18 .709 -56 7.57 87 .021 15 .714 -59 -138 6.69 81 .019 12 .719 -62 .841 -143 6.01 76 .018 11 .728 -64 .840 -149 5.41 72 .015 12 .742 -66 1.2 .849 -153 4.91 68 .013 13 .745 -68 1.3 .848 -158 4.51 64 .012 18 .758 -69 1.4 .856 -162 4.12 60 .010 26 .769 -70 1.5 .858 -167 3.78 57 .009 36 .786 -70 1.6 .871 -170 3.50 54 .008 54 .797 -72 1.7 .868 -173 3.22 51 .009 69 .808 -71 1.8 .870 -176 3.00 49 .009 82 .823 -72 1.9 .872 -180 2.80 46 .011 95 .828 -72 2.0 .877 178 2.63 44 .013 104 .845 -72 2.1 .876 174 2.47 41 .015 109 .843 -72 2.2 .880 171 2.36 39 .018 111 .859 -71 2.3 .882 168 2.21 36 .021 114 .858 -72 2.4 .886 165 2.12 34 .024 114 .872 -70 2.5 .896 162 1.97 32 .027 115 .863 -70 2.6 .897 158 1.89 29 .029 117 .873 -69 MRF281SR1 MRF281ZR1 5.2-228 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. * Specified Two-Tone Performance @ 2000 MHz, 26 Volts Output Power = 10 Watts PEP Power Gain = 10.5 dB Efficiency = 28% Intermodulation Distortion = -31 dBc * Specified Single-Tone Performance @ 2000 MHz, 26 Volts Output Power = 10 Watts CW Power Gain = 9.5 dB Efficiency = 35% * Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 10 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters 2000 MHz, 10 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 458B-02, STYLE 1 (MRF282SR1) * Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel. * LDMOS Models Available at http://www.motorola.com/semiconductors/rf/models/ CASE 458C-02, STYLE 1 (MRF282ZR1) MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS 20 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 60 0.34 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Symbol Max Unit RJC 4.2 C/W Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) IDSS -- -- 1.0 Adc Gate-Source Leakage Current (VGS = 20 Vdc, VDS = 0) IGSS -- -- 1.0 Adc OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 10 Adc) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 10 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF282SR1 MRF282ZR1 5.2-229 ELECTRICAL CHARACTERISTICS continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Gate Threshold Voltage (VDS = 10 Vdc, ID = 50 Adc) VGS(th) 2.0 3.0 4.0 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 0.5 Adc) VDS(on) -- 0.4 0.6 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 75 mAdc) VGS(q) 3.0 4.0 5.0 Vdc Input Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Ciss -- 15 -- pF Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Coss -- 8.0 -- pF Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Crss -- 0.45 -- pF Common-Source Power Gain (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Gps 10.5 11.5 -- dB Drain Efficiency (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) 28 -- -- % Intermodulation Distortion (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IMD -- -31 -28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IRL 9 14 -- dB Common-Source Power Gain (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Gps 10.5 11.5 -- dB Drain Efficiency (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) 28 -- -- % Intermodulation Distortion (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) IMD -- -31 -28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 10 W PEP, IDQ = 75 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) IRL 9 14 -- dB Common-Source Power Gain (VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f = 2000.0 MHz) Gps 9.5 11.5 -- dB Drain Efficiency (VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f = 2000.0 MHz) 35 40 -- % Output Mismatch Stress (VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz, Load VSWR = 10:1, All Phase Angles at Frequency of Test) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture) MRF282SR1 MRF282ZR1 5.2-230 No Degradation In Output Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA R2 R5 R3 R4 VGG + C3 RF INPUT B1 R1 C4 B2 C5 Z6 C7 Z12 C8 C10 Z2 Z3 C1 C2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z4 Z7 C11 C13 Z10 Z9 Z8 Z13 C16 Z14 C18 Z15 C15 C6 C9 0.491 x 0.080 Microstrip 0.253 x 0.080 Microstrip 0.632 x 0.080 Microstrip 0.567 x 0.080 Microstrip 1.139 x 0.055 Microstrip 0.236 x 0.055 Microstrip 0.180 x 0.325 Microstrip 0.301 x 0.325 Microstrip 0.439 x 0.325 Microstrip 0.055 x 0.325 Microstrip DUT C12 Z11 Z12 Z13 Z14 Z15 Z16 Raw Board Material C14 VDD + Z11 Z5 Z1 B4 B3 Z16 RF OUTPUT C17 0.636 x 0.055 Microstrip 0.303 x 0.055 Microstrip 0.463 x 0.080 Microstrip 0.105 x 0.080 Microstrip 0.452 0.085 x 0.080 Microstrip 0.910 0.085 x 0.080 Microstrip 0.030 Glass Teflon, 2 oz Copper, 3 x 5 Dimensions, Arlon GX0300-55-22, r = 2.55 Figure 1. 1.93 - 2.0 GHz Broadband Test Circuit Schematic Table 1. 1.93 - 2.0 GHz Broadband Component Designations and Values Designators Description B1, B4 0.120 x 0.333 x 0.100, Surface Mount Ferrite Beads, Fair Rite # 2743019446 B2, B3 0.120 x 0.170 x 0.100, Surface Mount Ferrite Beads, Fair Rite # 2743029446 C1, C2, C9 0.8-8.0 pF Gigatrim Variable Capacitors, Johanson # 27291SL C3 10 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet # T495X106K035AS4394 C4, C5, C13, C16 0.1 mF Chip Capacitor, Kemet # CDR33BX104AKWS C6 200 pF, B Case RF Chip Capacitors, ATC # 100B201JCA500X C7 18 pF, B Case RF Chip Capacitors, ATC # 100B180KP500X C8 39 pF, B Case RF Chip Capacitors, ATC # 100B390JCA500X C10 27 pF, B Case RF Chip Capacitors, ATC # 100B270JCA500X C11 1.2 pF, B Case RF Chip Capacitors, ATC # 100B1R2CCA500X C12 0.6-4.5 pF, Gigatrim Variable Capacitor, Johanson # 27271SL C14 0.5 pF, B Case RF Chip Capacitors, ATC # 100B0R5BCA500X C15 15 pF, B Case RF Chip Capacitors, ATC # 100B150JCA500X C17 0.1 pF, B Case RF Chip Capacitors, ATC # 100B0R1BCA500X C18 22 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet # T491X226K035AS4394 R1 560 k, 1/4 W Chip Resistor 0.08 x 0.13 R2, R5 12 , 1/4 W Chip Resistor 0.08 x 0.13, Garrett Instruments # RM73B2B120JT R3, R4 91 WS1, WS2 Beryllium Copper Wear Blocks 0.010 x 0.235 x 0.135 NOM W, 1/4 W Chip Resistor 0.08 x 0.13, Garrett Instruments # RM73B2B910JT Brass Banana Jack and Nut Red Banana Jack and Nut Green Banana Jack and Nut Type "N" Jack Connectors, Omni-Spectra # 3052-1648-10 4-40 Ph Head Screws, 0.125 Long 4-40 Ph Head Screws, 0.188 Long 4-40 Ph Head Screws, 0.312 Long RF Circuit Board 4-40 Ph Rec. Hd. Screws, 0.438 Long 3 x 5 Copper Clad PCB, Glass Teflon MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF282SR1 MRF282ZR1 5.2-231 R1 C4 R2 C5 C18 C13 C7 B2 R5 C8 B1 R3 R4 B4 C10 B3 C11 C16 C3 C6 WS1 C15 WS2 C14 C1 C2 C9 C17 C12 MRF282 Rev-0 D. W. Joersz Figure 2. 1.93-2.0 GHz Broadband Test Circuit Component Layout MRF282 Rev-0 D. W. Joersz (Scale 1:1) Figure 3. MRF282 Test Circuit Photomaster (Reduced 18% in printed data book, DL110/D) MRF282SR1 MRF282ZR1 5.2-232 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA R1 + C1 VGG RF INPUT B1 L1 Z2 Z1 C4 B2 C7 B3 L2 Z3 C2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 R3 R2 Z4 C6 Z5 C5 L3 Z6 C8 C14 C11 0.122 x 0.08 Microstrip 0.650 x 0.08 Microstrip 0.160 x 0.08 Microstrip 0.030 x 0.08 Microstrip 0.045 x 0.08 Microstrip 0.291 x 0.08 Microstrip 0.483 x 0.330 Microstrip R5 R6 B5 C10 B4 C13 B6 L4 DUT Z8 Z9 + C16 RF OUTPUT L5 Z10 VDD Z11 Z7 C9 C3 R4 Z8 Z9 Z10 Z11 Raw Board Material C12 C15 C17 0.414 x 0.330 Microstrip 0.392 x 0.08 Microstrip 0.070 x 0.08 Microstrip 1.110 x 0.08 Microstrip 0.030 Glass Teflon, 2 oz Copper, 3 x 5 Dimensions, Arlon GX0300-55-22, r = 2.55 Figure 4. 1.81 - 1.88 GHz Broadband Test Circuit Schematic Table 2. 1.81 - 1.88 GHz Broadband Component Designations and Values Designators Description B1, B2, B3, B4, B5, B6 0.120 x 0.170 x 0.100, Surface Mount Ferrite Beads, Fair Rite # 2743029446 C1, C16 470 F, 63 V, Electrolytic Capacitor, Mallory # SME63UB471M12X25L C2, C9, C12, C17 0.6-4.5 pF, Variable Capacitor, Johanson Gigatrim # 27271SL C3 0.8-8.0 pF, Variable Capacitor, Johanson Gigatrim # 27291SL C4, C13 0.1 F, Chip Capacitor, Kemet # CDR33BX104AKWS C5, C14 100 pF, B Case Chip Capacitor, ATC # 100B101JCA500X C6, C8, C11, C15 12 pF, B Case Chip Capacitor, ATC # 100B120JCA500X C7, C10 1000 pF, B Case Chip Capacitor, ATC # 100B102JCA50X L1 3 Turns, 27 AWG, 0.087 OD, 0.050 ID, 0.053 Long, 6.0 nH L2 5 Turns, 27 AWG, 0.087 OD, 0.050 ID, 0.091 Long, 15 nH L3, L4 9 Turns, 26 AWG, 0.080 OD, 0.046 ID, 0.170 Long, 30.8 nH L5 4 Turns, 27 AWG, 0.087 OD, 0.050 ID, 0.078 Long, 10 nH R1, R2, R3 12 , 1/8 W Fixed Film Chip Resistor. Garrett Instruments # RM73B2B120JT R4, R5, R6 0.08 x 0.13. Garrett Instruments # RM73B2B120JT W1, W2 Beryllium Copper 0.010 x 0.110 x 0.210 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF282SR1 MRF282ZR1 5.2-233 VSUPPLY + C1 R5 R1 R2 VDD Q1 Q2 R3 R4 B2 B1 R6 C13 + R7 C2 C5 C4 B3 C6 C8 R8 C9 + R9 C14 R10 C16 C18 VDD C20 L2 RF INPUT L1 Z1 Z2 RF OUTPUT DUT Z3 Z5 Z6 C3 Z1 Z2 Z3 Z4 Z5 Z6 Z9 Z4 C15 C7 Z8 Z7 C11 C10 0.624 x 0.08 Microstrip 0.725 x 0.08 Microstrip 0.455 x 0.08 Microstrip 0.530 x 0.330 Microstrip 0.280 x 0.330 Microstrip 0.212 x 0.330 Microstrip C17 C19 C12 Z7 Z8 Z9 Raw Board Material 0.408 x 0.08 Microstrip 0.990 x 0.08 Microstrip 0.295 x 0.08 Microstrip 0.030 Glass Teflon, 2 oz Copper, 3 x 5 Dimensions, Arlon GX0300-55-22, r = 2.55 Figure 5. Class A Test Circuit Schematic Table 3. Class A Broadband Component Designations and Values Designators Description B1, B2, B3 Ferrite Bead, Ferroxcube, 56-590-65-3B C1, C20 470 F, 63 V, Electrolytic Capacitor, Mallory # SME63V471M12X25L C2 0.01 F, B Case Chip Capacitor, ATC # 100B103JCA50X C3, C10, C15 0.6-4.5 pF, Variable Capacitor, Johanson # 27271SL C4, C16 0.02 F, B Case Chip Capacitor, ATC # 100B203JCA50X C5 100 F, 50 V, Electrolytic Capacitor, Mallory # SME50VB101M12X256 C6, C7, C9, C14, C17 12 pF, B Case Chip Capacitor, ATC # 100B120JCA500X C8, C13 51 pF, B Case Chip Capacitor, ATC # 100B510JCA500X C11, C12 0.3 pF, B Case Chip Capacitor, ATC # 100B0R3CCA500X C18 0.1 F, Chip Capacitor, Kemet # CDR33BX104AKWS C19 0.4-2.5 pF, Variable Capacitor, Johanson # 27285 L1 8 Turns, 0.042 ID, 24 AWG, Enamel L2 9 Turns, 0.046 ID, 26 AWG, Enamel Q1 NPN, 15 W, Bipolar Transistor, MJD310 Q2 PNP, 15 W, Bipolar Transistor, MJD320 R1 200 , Axial, 1/4 W Resistor R2 1.0 k, 1/2 W Potentiometer, Bourns R3 13 k, Axial, 1/4 W Resistor R4, R6, R7 390 , 1/8 W Chip Resistor, Garrett Instruments # RM73B2B391JT R5 1.0 , 10 W 1% Resistor, DALE # RE65G1R00 R8, R9, R10 12 , 1/8 W Chip Resistor, Garrett Instruments # RM73B2B120JT Input/Output Type N Flange Mount RF55-22, Connectors, Omni-Spectra MRF282SR1 MRF282ZR1 5.2-234 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA + j1 + j0.5 + j2 + j3 Zin 2 GHz + j0.2 Zo = 5 + j5 + j10 ZOL* f = 1.8 GHz 0.2 0.0 2 GHz 0.5 1 2 3 5 1.8 GHz - j10 - j5 - j0.2 - j3 - j2 - j0.5 - j1 VDD = 26 V, IDQ = 75 mA, Pout = 10 W (PEP) f MHz Zin ZOL* Zin 1800 2.1 + j1.0 3.8 - j0.15 1860 2.05 + j1.15 3.77 - j0.13 1900 2.0 + j1.2 3.75 - j0.1 1960 1.9 + j1.4 3.65 + j0.1 2000 1.85 + j1.6 3.55 + j0.2 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at given output power, voltage, IMD, bias current and frequency. Input Matching Network Output Matching Network Device Under Test Z in Z * OL Figure 6. Series Equivalent Input and Output Impedence MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF282SR1 MRF282ZR1 5.2-235 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF284 MRF284SR1 The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. To be used in class A and class AB for PCN-PCS/cellular radio and wireless local loop. * Specified Two-Tone Performance @ 2000 MHz, 26 Volts Output Power = 30 Watts (PEP) Power Gain = 9 dB Efficiency = 30% Intermodulation Distortion = -29 dBc * Typical Single-Tone Performance at 2000 MHz, 26 Volts Output Power = 30 Watts (CW) Power Gain = 9.5 dB Efficiency = 45% * Characterized with Series Equivalent Large-Signal Impedance Parameters * Excellent Thermal Stability * Capable of Handling 10:1 VSWR, @ 26 Vdc, 2000 MHz, 30 Watts (CW) Output Power * MRF284SR1 Is Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel. * LDMOS Models, Test Fixture, Reference Design and Circuit Board Artwork Available at: http://motorola.com/sps/rf/designtds/ 30 W, 2000 MHz, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 360B-03, STYLE 1 (MRF284) CASE 360C-03, STYLE 1 (MRF284SR1) MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Rating VDSS 65 Vdc Gate-Source Voltage VGS 20 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 87.5 0.5 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Symbol Max Unit RJC 2.0 C/W Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0) IDSS -- -- 1.0 Adc Gate-Source Leakage Current (VGS = 20 Vdc, VDS = 0) IGSS -- -- 10 Adc OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 10 Adc) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 8 MRF284 MRF284SR1 5.2-236 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Gate Threshold Voltage (VDS = 10 Vdc, ID = 150 Adc) VGS(th) 2.0 3.0 4.0 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 200 mAdc) VGS(q) 3.0 4.0 5.0 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1.0 Adc) VDS(on) -- 0.3 0.6 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 1.0 Adc) gfs -- 1.5 -- S Input Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Ciss -- 43 -- pF Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Coss -- 23 -- pF Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) Crss -- 1.4 -- pF Common-Source Power Gain (VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Gps 9 10.5 -- dB Drain Efficiency (VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) 30 35 -- % Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IMD -- -32 -29 dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W, IDQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IRL 9 15 -- dB Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Gps 9 10.4 -- dB Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) -- 35 -- % Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) IMD -- -34 -- dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 200 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) IRL 9 15 -- dB Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA, f1 = 2000.0 MHz) Gps 8.5 9.5 -- dB Drain Efficiency (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA, f1 = 2000.0 MHz) 35 45 -- % Output Mismatch Stress (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 200 mA, f1 = 2000.0 MHz, VSWR = 10:1, at All Phase Angles) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (in Motorola Test Fixture) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA No Degradation In Output Power MRF284 MRF284SR1 5.2-237 R1 VGG R2 W1 + R3 B1 B2 C6 C4 C3 R4 C7 C15 R5 R6 R7 B3 W2 C12 W3 C14 C13 Z10 Z1 Z2 Z3 C1 C2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z4 C5 Z5 Z6 + Z7 Z8 C10 Z11 Z12 C9 DUT Z9 Z13 C11 Z14 + C17 L2 L1 RF INPUT VDD C18 L3 Z15 Z16 Z17 RF OUTPUT C16 C8 0.530 x 0.080 Microstrip 0.255 x 0.080 Microstrip 0.600 x 0.080 Microstrip 0.525 x 0.080 Microstrip 0.015 x 0.325 Microstrip 0.085 x 0.325 Microstrip 0.165 x 0.325 Microstrip 0.110 x 0.515 Microstrip 0.095 x 0.515 Microstrip 0.050 x 0.515 Microstrip Z11 Z12 Z13 Z14 Z15 Z16 Z17 Raw Board Material 0.155 x 0.515 Microstrip 0.120 x 0.325 Microstrip 0.150 x 0.325 Microstrip 0.010 x 0.325 Microstrip 0.505 x 0.080 Microstrip 0.865 x 0.080 Microstrip 0.525 x 0.080 Microstrip 0.030 Glass Teflon, 2 oz Copper, 3 x 5 Dimensions, Arlon GX0300-55-22, r = 2.55 Figure 1. 1.93-2.0 GHz Broadband Test Circuit Schematic MRF284 MRF284SR1 5.2-238 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Table 1. 1.93 - 2.0 GHz Broadband Component Designations and Values Designators Description B1 - B3 Ferrite Bead, Round, Ferroxcube # 56-590-65-3B C1, C2, C8 0.8-8.0 pF Gigatrim Variable Capacitors, Johanson # 27291SL C3, C17 22 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet # T491X226K035AS4394 C4, C14 0.1 mF Chip Capacitor, Kemet # CDR33BX104AKWS C5 220 pF B Case RF Chip Capacitor, ATC # 100B221KP500X C6, C12 1000 pF B Case RF Chip Capacitor, ATC # 100B102JCA50X C7, C13 5.1 pF B Case RF Chip Capacitor, ATC # 100B5R1CCA500X C9 1.2 pF B Case RF Chip Capacitor, ATC # 100B1R2CCA500X C10 2.7 pF B Case RF Chip Capacitor, ATC # 100B2R7CCA500X C11 0.6-4.5 pF Gigatrim Variable Capacitors, Johanson # 27271SL C15, C16 200 pF B Case RF Chip Capacitor, ATC # 100B201KP500X C18 10 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet # T495X106K035AS4394 L1, L2 4 Turns, #24 AWG, 0.120 OD, 0.140 Long, (12.5 nH), Coilcraft # A04T-5 L3 2 Turns, #24 AWG, 0.120 OD, 0.140 Long, (5.0 nH), Coilcraft # A02T-5 R1, R2, R3, R5, R6, R7 12 , 1/4 W Chip Resistor 0.08 x 0.13, Garrett Instruments # RM73B2B120JT R4 560 k, 1/4 W Chip Resistor 0.08 x 0.13 W1, W2, W3 Solid Copper Buss Wire, 16 AWG WS1, WS2 Berrylium Copper Wear Blocks 0.005 x 0.250 x 0.250 Brass Banana Jack and Nut Red Banana Jack and Nut Green Banana Jack and Nut Type "N" Jack Connectors, Omni-Spectra # 3052-1648-10 4-40 Ph Head Screws, 0.125 Long 4-40 Ph Head Screws, 0.188 Long 4-40 Ph Head Screws, 0.312 Long RF Circuit Board 4-40 Ph Rec. Hd. Screws, 0.438 Long 3 x 5 Copper Clad PCB, Glass Teflon MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF284 MRF284SR1 5.2-239 C12 C6 C4 C14 R2 R1 R6 B1 R3 C17 R7 B3 R4 B2 C3 R5 C7 C13 C18 C15 L1 C9 L2 WS1 L3 C10 C5 C1 W3 W2 W1 C16 WS2 C11 C2 C8 MRF284 Rev-0 D W Joersz Figure 2. 1.93-2.0 GHz Broadband Test Circuit Component Layout MRF284 Rev-0 D W Joersz (Scale 1:1) Figure 3. MRF284 Test Circuit Photomaster (Reduced 18% in printed data book, DL110/D) MRF284 MRF284SR1 5.2-240 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA VSUPPLY + R1 C1 R3 VDD P1 VDD B3 B4 B5 R9 R10 R11 C15 B2 B1 + Q1 R4 R2 Q2 R6 R5 + C9 C7 R7 C8 R8 C11 C2 C13 C10 C16 C4 L4 L1 RF INPUT Z1 L3 Z2 Z3 Z4 Z5 Z6 Z10 Z7 Z8 Z9 Z11 Z12 Z13 DUT Z14 Z15 Z16 RF OUTPUT C14 C12 C17 C3 L2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 C5 C6 0.363 x 0.080 Microstrip 0.080 x 0.080 Microstrip 0.916 x 0.080 Microstrip 0.517 x 0.080 Microstrip 0.050 x 0.325 Microstrip 0.050 x 0.325 Microstrip 0.071 x 0.325 Microstrip 0.125 x 0.325 Microstrip 0.210 x 0.515 Microstrip 0.210 x 0.515 Microstrip Z11 Z12 Z13 Z14 Z15 Z16 Raw Board Material 0.235 x 0.325 Microstrip 0.02 x 0.325 Microstrip 0.02 x 0.325 Microstrip 0.510 x 0.080 Microstrip 0.990 x 0.080 Microstrip 0.390 x 0.080 Microstrip 0.030 Glass Teflon, 2 oz Copper, 3 x 5 Dimensions, Arlon GX0300-55-22, r = 2.55 Figure 4. 2.0 GHz Class A Test Circuit Schematic MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF284 MRF284SR1 5.2-241 Table 2. 2.0 GHz Class A Component Designations and Values Designators Description B1 - B5 Ferrite Bead, Round, Ferroxcube # 56-590-65-3B C1, C9, C16 100 F, 50 V, Electrolytic Capacitor, Mallory # SME50VB101M12X25L C2, C13 51 pF, ATC RF Chip Capacitors, Case "B" # 100B510JCA500x C3, C14 10 pF, ATC RF Chip Capacitors, Case "B" # 100B100JCA500X C4, C11 12 pF, ATC RF Chip Capacitors, Case "B" # 100B120JCA500X C5 0.8 - 8.0 pF Variable Capacitor, Johansen Gigatrim # 27291SL C6 4.7 pF, ATC RF Chip Capacitor, Case "B" # 100B4R7CCA500X C7, C15 91 pF, ATC RF Chip Capacitors, Case "B" # 100B910KP500X C8 1000 pF, ATC RF Chip Capacitor, Case "B" # 100B102JCA50X C10 0.1 F, Chip Capacitor, Kemet # CDR33BX104AKWS C12, C17 0.6 - 4.5 pF, Variable Capacitors, Johansen Gigatrim # 27271SL L1 4 Turns, #27 AWG, 0.087 OD, 0.050 ID, 0.069 Long, 10 nH L2 5 Turns, #24 AWG, 0.083 OD, 0.040 ID, 0.128 Long, 12.5 nH L3, L4 9 Turns, #26 AWG, 0.080 OD, 0.046 ID, 0.170 Long, 30.8 nH P1 1000 Potentiometer, 1/2 W, 10 Turns, Bourns Q1 Transistor, NPN, Motorola P/N: MJD31, Case 369A-10 Q2 Transistor, PNP, Motorola P/N: MJD32, Case 369A-10 R1 360 , Fixed Film Chip Resistor 0.08 x 0.13, Garrett Instruments # RM73B2B361JT R2 2 x 12 k, Fixed Film Chip Resistor 0.08 x 0.13, Garrett Instruments # RM73B2B122JT R3 1 , Wirewound, 5 W, 3% Resistor, Dale # RE60G1R00 R4 4 x 6.8 k, Fixed Film Chip Resistor 0.08 x 0.13, Garrett Instruments # RM73B2B682JT R5 2 x 1500 , Fixed Film Chip Resistor 0.08 x 0.13, Garrett Instruments # RM73B2B152JT R6 270 , Fixed Film Chip Resistor 0.08 x 0.13, Garrett Instruments # RM73B2B271JT R7 - R11 12 , Fixed Film Chip Resistor 0.08 x 0.13, Garrett Instruments # RM73B2B120JT MRF284 MRF284SR1 5.2-242 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA TYPICAL CHARACTERISTICS 14 45 35 13 40 30 12 25 11 Gps 15 9 8 10 VDD = 26 Vdc IDQ = 200 mA f = 2000 MHz Single Tone 5 0.5 0 1.0 3.5 35 2W 30 25 Pin = 1 W 20 VDD = 26 Vdc IDQ = 200 mA Single Tone 15 7 1.5 2.5 3.0 2.0 Pin, INPUT POWER (WATTS) 3W 6 4.0 10 1800 1820 1840 1860 1880 1900 1920 1940 1960 1980 2000 f, FREQUENCY (MHz) 12 - 20 VDD = 26 Vdc IDQ = 200 mA - 30 f = 2000.0 MHz 1 f2 = 2000.1 MHz - 40 - 50 Figure 6. Output Power versus Frequency 3rd Order 5th Order 10 -20 9 -25 7th Order -30 8 Pout = 30 W (PEP) IDQ = 200 mA f1 = 2000.0 MHz f2 = 2000.1 MHz 7 - 70 0.1 -15 Gps - 60 - 80 -10 11 G ps , GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) Figure 5. Output Power & Power Gain versus Input Power 6 16 1.0 10 Pout, OUTPUT POWER (WATTS) PEP 18 - 20 - 30 20 22 24 VDD, DRAIN SUPPLY VOLTAGE (Vdc) 26 -35 -40 28 Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage 13 VDD = 26 Vdc f1 = 2000.0 MHz f2 = 2000.1 MHz IDQ = 400 mA 12 G ps , POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) Figure 7. Intermodulation Distortion Products versus Output Power IMD IMD, INTERMODULATION DISTORTION (dBc) 10 20 0 4W Pout , OUTPUT POWER (WATTS) Pout G ps , GAIN (dB) Pout , OUTPUT POWER (WATTS) 40 100 mA - 40 300 mA 300 mA 200 mA 11 10 200 mA - 50 9 IDQ = 400 mA - 60 0.1 1.0 10 VDD = 26 Vdc f1 = 2000.0 MHz f2 = 2000.1 MHz 100 mA 8 0.1 1.0 10 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 9. Intermodulation Distortion versus Output Power Figure 10. Power Gain versus Output Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF284 MRF284SR1 5.2-243 TYPICAL CHARACTERISTICS 3 100 Ciss Tflange = 100C C, CAPACITANCE (pF) ID, DRAIN CURRENT (Adc) Tflange = 75C 2 1 Coss 10 TJ = 175C Crss 0 0 4 8 12 16 20 24 28 1 0 4 VDD, DRAIN SUPPLY VOLTAGE (Vdc) Pout , OUTPUT POWER (dBm) Figure 11. DC Safe Operating Area 60 50 40 30 20 10 0 -10 - 20 - 30 - 40 - 50 - 60 -70 - 80 - 90 8 16 12 20 24 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 28 Figure 12. Capacitance versus Drain Source Voltage FUNDAMENTAL 3rd Order VDD = 26 Vdc IDQ = 1.8 Adc f1 = 2000.0 MHz f2 = 2000.1 MHz 0 5 10 15 20 25 30 35 40 Pin, INPUT POWER (dBm) 45 50 55 60 Figure 13. Class A Third Order Intercept Point MRF284 MRF284SR1 5.2-244 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Gps 40 Gps, GAIN (dB) 9 35 Pout = 30 Watts (PEP) VDD = 26 Vdc, IDQ = 200 mA Two-Tone Frequency Delta = 100 kHz 8 7 30 6 IMD -36 5 4 VSWR 3 1920 1940 1960 f, FREQUENCY (MHz) 3.0 -32 1980 -40 2000 INTERMODULATION DISTORTION (dBc) 10 2.0 INPUT VSWR 45 11 EFFICIENCY (%) TYPICAL CHARACTERISTICS 1.0 Figure 14. 1.92-2.0 GHz Broadband Circuit Performance MTBF FACTOR (HOURS x AMPS 2 ) 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04 0 50 100 150 200 250 TJ, JUNCTION TEMPERATURE (C) This graph displays calculated MTBF in hours x ampere2 drain current. Life tests at elevated temperature have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTBF factor by ID2 for MTBF in a particular application. Figure 15. MTBF Factor versus Junction Temperature MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF284 MRF284SR1 5.2-245 + j1 + j0.5 + j2 + j3 Zin 2 GHz + j0.2 + j5 Zo = 1 0.2 0.0 0.5 + j10 2 GHz f = 1.8 GHz 1 2 3 5 ZOL* f = 1.8 GHz - j10 - j5 - j0.2 - j3 - j2 - j0.5 - j1 VCC = 26 V, ICQ = 200 mA, Pout = 15 Wavg f MHz Zin(1) Ohms ZOL* Ohms 1800 1.0 + j0.4 2.1 - j0.4 1860 1.0 + j0.8 2.2 + j0.2 1900 1.0 + j1.1 2.3 + j0.5 1960 1.0 + j1.4 2.5 + j0.9 2000 1.0 + j2.3 2.6 + j0.92 Zin(1)= Complex conjugate of source impedance. ZOL* = Conjugate of the optimum load impedance at given output power, voltage, bias current and frequency. Figure 16. Series Equivalent Input and Output Impedence MRF284 MRF284SR1 5.2-246 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 - 860 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 32 volt transmitter equipment. * Typical Narrowband Two-Tone Performance @ f1 = 857 MHz, f2 = 863 MHz, 32 Volts Output Power - 180 Watts PEP Power Gain - 17 dB Efficiency - 36% IMD - -35 dBc * Typical Broadband Two-Tone Performance @ f1 = 857 MHz, f2 = 863 MHz, 32 Volts Output Power - 180 Watts PEP Power Gain - 14.5 dB Efficiency - 37% IMD - -31 dBc * Internally Matched * Integrated ESD Protection * 100% Tested for Load Mismatch Stress at All Phase Angles with 3:1 VSWR @ 32 Vdc, f1 = 857 MHz, f2 = 863 MHz, 180 Watts PEP * Excellent Thermal Stability 470 - 860 MHz, 180 W, 32 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET CASE 375G-03, STYLE 2 MAXIMUM RATINGS (1) Rating Symbol Value Unit Drain-Source Voltage VDSS 68 Vdc Gate-Source Voltage VGS +15, - 0.5 Vdc Drain Current - Continuous ID 17 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 350 2.0 W W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Operating Junction Temperature ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Typical) Machine Model M3 (Typical) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.5 C/W (1) Each side of device measured separately. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF372 5.2-247 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 68 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 32 V, VGS = 0 V) IDSS -- -- 10 Adc Gate-Source Leakage Current (VGS = 5 V, VDS = 0 V) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 V, ID = 200 A) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 32 V, ID = 100 mA) VGS(Q) 2.5 3.5 4.5 Vdc Drain-Source On-Voltage (VGS = 10 V, ID = 3 A) VDS(on) -- 0.28 0.45 Vdc Forward Transconductance (VDS = 10 V, ID = 3 A) gfs -- 2.6 -- S Input Capacitance (Includes Input Matching Capacitance) (VDS = 32 V, VGS = 0 V, f = 1 MHz) Ciss -- 260 -- pF Output Capacitance (VDS = 32 V, VGS = 0 V, f = 1 MHz) Coss -- 69 -- pF Reverse Transfer Capacitance (VDS = 32 V, VGS = 0 V, f = 1 MHz) Crss -- 2.5 -- pF OFF CHARACTERISTICS (1) Drain-Source Breakdown Voltage (VGS = 0 V, ID =10 A) ON CHARACTERISTICS (1) DYNAMIC CHARACTERISTICS (1) FUNCTIONAL CHARACTERISTICS, TWO-TONE TESTING, NARROWBAND FIXTURE (2) Common Source Power Gain (VDD = 32 V, Pout = 180 W PEP, IDQ = 2 x 400 mA, f1 = 857 MHz, f2 = 863 MHz) Gps 16 17 -- dB Drain Efficiency (VDD = 32 V, Pout = 180 W PEP, IDQ = 2 x 400 mA, f1 = 857 MHz, f2 = 863 MHz) 33 36 -- % IMD -- -35 -31 dBc Intermodulation Distortion (VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 2 x 400 mA, f1 = 857 MHz, f2 = 863 MHz) Output Mismatch Stress (VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 2 x 400 mA, f1 = 857 MHz, f2 = 863 MHz, VSWR = 3:1 at all phase angles of test) No Degradation in Output Power TYPICAL CHARACTERISTICS, TWO-TONE OPERATION, BROADBAND FIXTURE (2) Common Source Power Gain (VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 2 x 500 mA, f1 = 857 MHz, f2 = 863 MHz) Gps -- 14.5 -- dB Drain Efficiency (VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 2 x 500 mA, f1 = 857 MHz, f2 = 863 MHz) -- 37 -- % Intermodulation Distortion (VDD = 32 Vdc, Pout = 180 W PEP, IDQ = 2 x 500 mA, f1 = 857 MHz, f2 = 863 MHz) IMD -- - 31 -- dBc (1) Each side of device measured separately. (2) Measured in push-pull configuration. MRF372 5.2-248 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA TYPICAL CHARACTERISTICS 20 Ciss 150 15 100 10 Coss 50 0 5 Crss 0 10 20 30 40 50 C rss , Capacitance (pF) C oss , C iss , Capacitance (pF) 200 0 60 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) Note: Ciss does not include input matching capacitance. Figure 1. Capacitance versus Voltage MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF372 5.2-249 GATE L1 L2 L3 R1 VGG R3 DRAIN L4 R4 R5 VDD + C3 R2 C5 C8 C7 C12 C10 Figure 2. 860 MHz Narrowband DC Bias Networks Table 1. 860 MHz Narrowband DC Bias Networks Component Designations and Values AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA Designation MRF372 5.2-250 Description C1 2.2 pF, Chip Capacitor, B Case, ATC C2 0.5 -- 5.0 pF, Variable Capacitor, B Case, Johansen Gigatrim C3A, B 22 mF, 22 V, Tantalum Chip Capacitors, Kemet #T491D226K22AS C4A, B, C14A, B 47.0 pF, Chip Capacitors, B Case, ATC C5A, B 100 pF, Chip Capacitors, B Case, ATC C6 10.0 pF, Chip Capacitor, B Case, ATC C7A, B 2.7 pF, Chip Capacitors, A Case, ATC C8A, B 1.0 mF, 100 V, Chip Capacitors, Vitramon #VJ3640Y105KXBAT C9 10.0 pF, Chip Capacitor, B Case, ATC C10A, B 2.2 mF, 100 V, Chip Capacitors, Vitramon #VJ3640Y225KXBAT C11 5.1 pF, Chip Capacitor, B Case, ATC C12A, B 0.01 mF, 100 V, Chip Capacitors, Kemet #VJ1210Y103KXBAT C15 1.2 pF, Chip Capacitor, B Case, ATC L1A, B 130 nH, Coilcraft #132-11SM L2A, B #24 AWG, 3 Turns Loose, Fair Rite #2643706001 L3A, B 3.85 nH, Coilcraft #0906-4 L4A, B 5.0 nH, Coilcraft #A02T R1A, B, R2A, B R4A, B, R5A, B 180 , 1/4 W, Chip Resistors, Vishay Dale (1210) R3A, B 12 , 1/8 W Chip Resistors, Vishay Dale (1206) PCB MRF372 Printed Circuit Board Rev 1a, Rogers RO4350, Height 30 mils, r = 3.48 Balun A, B Vertical 860 MHz Broadband Balun, Printed Circuit Board Rev 01, Rogers RO3010, Height 50 mils, r = 10.2 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA R2A R1A L1A L2A C3A C10A C8A C5A L3A R4A R5A L4B R3A C4A C12A C7A C14A C6 C1 C2 R3B C3B L1B C11 C9 C4B L2B L3B C5B R1B R2B R4B L4B C15 C13 C14B R5B C7B C12B C8B C10B MRF372 Rev 1a Vertical Balun Mounting Detail Output 2 (12.5 ohm microstrip) Motorola Vertical 860 MHz Balun Rogers RO3010 (50 mil thick) Output 1 (12.5 ohm microstrip) PCB Substrate (30 mil thick) Note: Trim Balun PCB so that a 35 mil "tab" fits into the main PCB "slot" resulting in Balun solder pads being level with the PCB substrate solder pads when fully inserted. Input (50 ohm microstrip) Ground 55 mil slot cut out to accept Balun Figure 3. 860 MHz Narrowband Component Layout MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF372 5.2-251 TYPICAL TWO-TONE NARROWBAND CHARACTERISTICS 35 25 -20 -25 h Gps 20 -30 15 -35 10 -40 IMR 5 -45 0 IMR, INTERMODULATION RATIO (dB) G ps , POWER GAIN (dB) h, DRAIN EFFICIENCY (%) 30 -15 VDD = 32 Vdc IDQ = 1.6 A 2 K Mode 64 QAM 10 dB Peak/Avg. Ratio -50 100 10 Pout, OUTPUT POWER (WATTS) AVG. Note: IMR measured using Delta Marker Method. Figure 4. COFDM Performance (860 MHz) 40 -15 -20 30 -25 25 -30 h 20 -35 Gps 15 -40 IMR 10 -45 5 10 100 18 G ps, POWER GAIN (dB) G ps , POWER GAIN (dB) h, DRAIN EFFICIENCY (%) 35 20 IMR, INTERMODULATION RATIO (dB) VDD = 32 Vdc IDQ = 1.6 A 6 dB Peak/Avg. Ratio -50 IDQ = 1.6 A 1.2 A 16 800 mA 400 mA 14 VDD = 32 Vdc f1 = 857 MHz f2 = 863 MHz 12 10 10 Pout, OUTPUT POWER (WATTS) AVG. Note: Pout, OUTPUT POWER (WATTS) PEP IMR measured using Delta Marker Method. Figure 6. Power Gain versus Output Power 45 -10 -20 VDD = 32 Vdc f1 = 857 MHz f2 = 863 MHz 40 , DRAIN EFFICIENCY (%) D IMD, INTERMODULATION DISTORTION (dBc) Figure 5. 8-VSB Performance (860 MHz) -15 100 IDQ = 400 mA -25 -30 800 mA -35 1.2 A -40 -45 -50 30 25 20 15 10 1.6 A 5 10 100 10 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 7. Intermodulation Distortion versus Output Power MRF372 5.2-252 35 VDD = 32 Vdc IDQ = 800 mA f1 = 857 MHz f2 = 863 MHz Figure 8. Drain Efficiency versus Output Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Zo = 10 Zin f = 845 MHz f = 875 MHz f = 845 MHz f = 875 MHz ZOL* VDD = 32 V, IDQ = 800 mA, Pout = 180 W (PEP) f MHz ZOL* Zin 845 3.99 + j2.50 5.63 - j0.38 860 3.56 + j1.98 5.28 - j0.43 875 3.18 + j1.46 4.94 - j0.56 Harmonics Zin f GHz Zin ZOL* 1.69 2.85 - j14.30 1.23 - j9.37 1.72 3.27 - j14.32 1.54 - j9.60 1.75 3.35 - j14.36 1.73 - j9.62 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Note: Zin and ZOL* were chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Input Matching Network Output Matching Network Device Under Test Z in Z * OL Figure 9. Narrowband Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF372 5.2-253 GATE L2 R6 VGG DRAIN R5 L3 R9A R9B VDD + C9 C8 + R7 R3 R2 C7 C18 C17 C16 R4T Figure 10. 470-860 MHz Broadband DC Bias Networks Table 2. 470-860 MHz Broadband DC Bias Networks Component Designations and Values AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA AAAAAAAAAA AAAAAAAAAAAAAAAAAAAA Designation MRF372 5.2-254 Description C1 0.7 pF, Chip Capacitor, B Case, ATC C2, C13 0.8 -- 8.0 pF, Variable Capacitors, Johansen Gigatrim C3A, B, C14A, B, C, D 100 pF, Chip Capacitors, B Case, ATC C4 4.7 pF, Chip Capacitor, B Case, ATC C5 7.5 pF, Chip Capacitor, B Case, ATC C6 10.0 pF, Chip Capacitor, B Case, ATC C7A, B 6.2 pF, Chip Capacitors, A Case, ATC C8A, B 22 mF, 22 V, Tantalum Chip Capacitors, Kemet #T491D226K22AS C9A, B 0.1 mF, 100 V, Chip Capacitors, Vitramon #VJ3640Y104KXBAT C10 13 pF, Chip Capacitor, B Case, ATC C11 6.8 pF, Chip Capacitor, B Case, ATC C12 3.9 pF, Chip Capacitor, B Case, ATC C15A, B 3.3 pF, Chip Capacitors, B Case, ATC C16A, B 10 mF, 35 V, Tantalum Chip Capacitors, Kemet #T491D106K35AS C17A, B 3.3 mF, 100 V, Chip Capacitors, Vitramon #VJ3640Y335KXBAT C18A, B 0.01 mF, Chip Capacitors, B Case, ATC L1A, B 12.55 nH, Coilcraft #1606-10 L2A, B 5.45 nH, Coilcraft #0906-5 L3A, B, C 12.5 nH, Coilcraft #A04T R1A, B 10 , 1/4 W, Chip Resistors, Vishay Dale (1210) R2A, B 2.2 k, 1/4 W, Chip Resistors, Vishay Dale (1210) R3A, B, R10A, B 390 , 1/8 W Chip Resistors, Vishay Dale (1206) R4TA, B 520 , Thermistor, Vishay #NTHS--1206J14520R5% R5A, B 6.2 , 1/4 W, Chip Resistors, Vishay Dale (1210) R6A, B 6.8 k, 1/4 W, Chip Resistors, Vishay Dale (1210) R7 100 k, Potentiometer, Bourns R8 47.3 k, 1/8 W Chip Resistor, Vishay Dale (1206) R9A, B, C, D 180 , 1/4 W, Chip Resistors, Vishay Dale (1210) PCB MRF372 Printed Circuit Board Rev 1a, Rogers RO4350, Height 30 mils, r = 3.48 Balun A, B Vertical 660 MHz Broadband Balun, Printed Circuit Board Rev 01, Rogers RO3010, Height 50 mils, r = 10.2 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA C8A R6A R8 C16A R4TA R2A L2A C9A L1A R3A C7A R1A C17A C18A R9A C4 R1B C15A R10A C14A C5 C6 C10 C11 C12 C2 C1 R9B L3A R5A C3A L3B C3B R5B L1B C9B C7B R6B C8B C13 L3C R9C L2B R2B R3B C14B R9D C14C C14D C15B C18B R10B C17B C16B R7 R4TB MRF372 Rev. 1a Vertical Balun Mounting Detail Output 2 (12.5 ohm microstrip) Motorola Vertical 660 MHz Balun Rogers RO3010 (50 mil thick) Output 1 (12.5 ohm microstrip) PCB Substrate (30 mil thick) Note: Trim Balun PCB so that a 35 mil "tab" fits into the main PCB "slot" resulting in Balun solder pads being level with the PCB substrate solder pads when fully inserted. Input (50 ohm microstrip) Ground 55 mil slot cut out to accept Balun Figure 11. 470-860 MHz Broadband Component Layout MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF372 5.2-255 TYPICAL TWO-TONE BROADBAND CHARACTERISTICS 18 IMD, INTERMODULATION DISTORTION (dBc) G ps, POWER GAIN (dB) 20 VDD = 32 Vdc IDQ = 1.0 A f1 - f2 = 6 MHz 16 Gps = 660 MHz 14 470 MHz 860 MHz 12 10 10 -10 -15 -20 VDD = 32 Vdc IDQ = 1.0 A f1 - f2 = 6 MHz -25 -30 -40 660 MHz -45 -50 100 860 MHz IMD = 470 MHz -35 10 Pout, OUTPUT POWER (WATTS) PEP 100 Pout, OUTPUT POWER (WATTS) PEP Figure 12. Power Gain versus Output Power Figure 13. Intermodulation Distortion versus Output Power 45 VDD = 32 Vdc IDQ = 1.0 A f1 - f2 = 6 MHz hD , DRAIN EFFICIENCY (%) 40 35 hD = 860 MHz 660 MHz 30 25 470 MHz 20 15 10 5 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 14. Drain Efficiency versus Output Power MRF372 5.2-256 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Zo = 10 Zo = 10 f = 470 MHz f = 470 MHz ZOL* Zin f = 860 MHz f = 860 MHz VDD = 32 V, IDQ = 1.0 mA, Pout = 180 W (PEP) f MHz Zin ZOL* Zin 470 4.46 + j2.57 4.88 + j3.50 560 6.40 - j1.06 5.45 + j0.07 660 7.84 - j0.14 8.13 - j0.73 760 6.67 - j0.46 8.27 + j1.00 860 6.25 - j0.31 7.52 - j0.02 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Note: Zin and ZOL* were chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Input Matching Network Output Matching Network Device Under Test Z in Z * OL Figure 15. Broadband Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF372 5.2-257 MOTOROLA MRF373 MRF373S The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 60 W, 470 - 860 MHz, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETS Designed for broadband commercial and industrial applications at frequencies from 470 - 860 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 28 volt transmitter equipment. * Guaranteed CW Performance at 860 MHz, 28 Volts, Narrowband Fixture Output Power - 60 Watts Power Gain - 13 dB Efficiency - 50% CASE 360B-03, STYLE 1 (MRF373) * Excellent Thermal Stability * 100% Tested for Load Mismatch Stress at All Phase Angles with 5:1 VSWR @ 28 Vdc, 860 MHz, 60 Watts CW G CASE 360C-03, STYLE 1 (MRF373S) S MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Rating VDSS 65 Vdc Gate-Source Voltage VGS 20 Vdc ID 7 Adc PD 173 1.33 W W/C Tstg - 65 to +150 C TJ 200 C Symbol Max Unit Drain Current - Continuous Total Device Dissipation @ TC = 25C Derate above 25C MRF373S Storage Temperature Range Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case MRF373S RJC 0.75 C/W Thermal Resistance, Junction to Case MRF373 RJC 1 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 4 MRF373 MRF373S 5.2-258 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA LAST ORDER 31JUL04 LIFETIME BUY * Typical Performance at 860 MHz, 28 Volts, Broadband Push-Pull Fixture Output Power - 100 Watts (PEP) D Power Gain - 11.2 dB Efficiency - 40% IMD - -30 dBc LAST SHIP 31JAN05 SEMICONDUCTOR TECHNICAL DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 - - Vdc Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) IDSS - - 1 Adc Gate-Source Leakage Current (VGS = 20 V, VDS = 0) IGSS - - 1 Adc Gate Threshold Voltage (VDS = 10 V, ID = 200 A) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 28 V, ID = 100 mA) VGS(Q) 3 4 5 Vdc Drain-Source On-Voltage (VGS = 10 V, ID = 3 A) VDS(on) - 0.6 0.8 Vdc Forward Transconductance (VDS = 10 V, ID = 3 A) gfs 2.2 2.9 - S Input Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Ciss - 79 - pF Output Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Coss - 46 - pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Crss - 4 - pF Common Source Power Gain (VDD = 28 V, Pout = 60 W, IDQ = 200 mA, f = 860 MHz) Gps 13 14.7 - dB Drain Efficiency (VDD = 28 V, Pout = 60 W, IDQ = 200 mA, f = 860 MHz) 50 54 - % Load Mismatch (VDD = 28 V, Pout = 60 W, IDQ = 200 mA, f = 860 MHz, Load VSWR at 5:1 at All Phase Angles) Drain-Source Breakdown Voltage (VGS = 0, ID =1 A) LIFETIME BUY ON CHARACTERISTICS DYNAMIC CHARACTERISTICS LAST SHIP 31JAN05 OFF CHARACTERISTICS No Degradation in Output Power TYPICAL CHARACTERISTICS, 2 Tone Operation, Push Pull Configuration (MRF373S), Broadband Fixture Common Source Power Gain (VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA, f1 = 860.0 MHz, f2 = 866 MHz) Gps - 11.2 - dB Drain Efficiency (VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA, f1 = 860.0 MHz, f2 = 866 MHz) - 40 - % Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA, f1 = 860.0 MHz, f2 = 866 MHz) IMD - - 30 - dBc MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF373 MRF373S 5.2-259 LAST ORDER 31JUL04 FUNCTIONAL CHARACTERISTICS, CW Operation VDD VGG C14 C13 R1 C4 C1 Z7 RF INPUT C11 C12 L1 Z8 Z9 Z10 RF OUTPUT Z12 Z11 C7 Z1 Z2 Z3 Z4 Z5 Z6 C2 C3 C9 C8 LIFETIME BUY C6 C1 C2 C3 C4, C5, C6 C7, C8 C9 C10, C13 C11 C12 C14 C15 L1 R1 R2 C5 4.7 pF, B Case Chip Capacitor, ATC 15 pF, B Case Chip Capacitor, ATC 6.8 pF, B Case Chip Capacitor, ATC 10 pF, B Case Chip Capacitor, ATC 47 pF, B Case Chip Capacitor, ATC 0.2 pF, B Case Chip Capacitor, ATC 300 pF, B Case Chip Capacitor, ATC, Side Mounted 2) 2.2 mF, 50 V, Kemet P/N C1825C225 22 mF, 50 V, Kemet P/N T491D226K50AS 2) 1.0 mF, 50 V, Kemet P/N C1825C105 10 mF, 35 V, Kemet P/N T491D106K35AS 22 nH, Coilcraft P/N B07T 1.2 k, Vishay Dale Chip Resistor (1206) 12 k, Vishay Dale Chip Resistor (1206) Connectors N-Type (female), M/A Com P/N 3052-1648-10 PCB MRF373 Printed Circuit Board Rev 01, CuClad 250 (GX-0300-55), height 30 mils, r = 2.55 Heatsink Motorola P/N 95-11LDMOSKPS-1 LDMOS m250 3 x 5 Bedstead Insert Motorola P/N 95-11LDMOSKPS-2 Insert for LDMOS m250 3 x 5 Bedstead End Plates 2) Motorola P/N 93-3MB-9, End Plate for Type-N Connector Banana Jack and Nut 2) Johnson P/N 108-0904-001 Brass Banana Jack 2) H.H. Smith P/N SM-101 Figure 1. Single-Ended Narrowband Test Circuit Schematic (MRF373) TO GATE BIAS SUPPLY TO DRAIN BIAS SUPPLY R2 C14 C15 C11 C13 R1 C10 L1 C4 C1 C8 C2 C6 C12 C3 C7 C9 C5 MRF373 Figure 2. Single-Ended Narrowband Test Circuit Layout (Suitable for Use with MRF373) MRF373 MRF373S 5.2-260 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA LAST SHIP 31JAN05 C15 LAST ORDER 31JUL04 C10 R2 C20 R2 C25 C24 C23 R1 C7 C1 Z10 RF INPUT Z11 Z12 C21 C22 L1 Z13 Z14 Z16 Z15 RF OUTPUT C5 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 C2 C3 C4 C6 C10 C11 C1, C2 C3 C4, C11 C5, C10 C6 C7 C8 C9 C20, C23 C21 C24 C22 C25 L1 R1 R2 C9 C8 18 pF, B Case Chip Capacitor, ATC 12 pF, B Case Chip Capacitor, ATC 0.8 pF, B Case Chip Capacitor, ATC 68 pF, B Case Chip Capacitor, ATC 0.3 pF, B Case Chip Capacitor, ATC 15 pF, B Case Chip Capacitor, ATC 10 pF, B Case Chip Capacitor, ATC 1.8 pF, B Case Chip Capacitor, ATC 300 pF, B Case Chip Capacitor, ATC, Side Mounted 2) 2.2 mF, 100 V, Vishay P/N VJ3640Y225KXBAT 2) 1.0 mF, 50 V, Kemet P/N C1825C105 22 mF, 35 V, Kemet P/N T491D226K35AS 10 mF, 35 V, Kemet P/N T491D106K35AS 22 nH, Coilcraft P/N B07T 1.2 k, Vishay Dale Chip Resistor (1206) 12 k, Vishay Dale Chip Resistor (1206) Connectors N-Type (female), M/A Com P/N 3052-1648-10 PCB MRF373 Printed Circuit Board Rev 01, CuClad 250 (GX-0300-55), height 30 mils, r = 2.55 (new PCB's available from CMR) Heatsink Motorola P/N 95-11LDMOSKPS-1 LDMOS m250 3 x 5 Bedstead Insert Motorola P/N 95-11LDMOSKPS-2S Insert for LDMOS m250S 3 x 5 Bedstead End Plates 2) Motorola P/N 93-3MB-9, End Plate for Type-N Connector Banana Jack and Nut 2) Johnson P/N 108-0904-001 Brass Banana Jack 2) H.H. Smith P/N SM-101 Figure 4. Single-Ended Narrowband Test Circuit Schematic (MRF373S) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA LAST SHIP 31JAN05 VDD VGG MRF373 MRF373S 5.2-261 LAST ORDER 31JUL04 LIFETIME BUY Figure 3. MRF373 Narrowband Test Fixture Photo C24 C25 C21 C23 R1 C11 C20 L1 C7 C1 C10 C2 C9 C22 C3 C4 C5 C6 LIFETIME BUY C8 MRF373S Figure 5. Single-Ended Narrowband Test Circuit Layout (Suitable for Use with MRF373S) Figure 6. MRF373S Narrowband Test Circuit Photo MRF373 MRF373S 5.2-262 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA LAST SHIP 31JAN05 TO DRAIN BIAS SUPPLY R2 LAST ORDER 31JUL04 TO GATE BIAS SUPPLY TYPICAL CHARACTERISTICS FOR MRF373 IN SINGLE-ENDED FIXTURE 22 300 mA 200 mA 100 mA 40 35 45 Pout, OUTPUT POWER (dBm) 18 16 57 56 55 Gp 14 54 12 53 10 52 8 51 6 800 50 Figure 7. Power Gain versus Output Power 50 820 900 840 880 860 f, FREQUENCY (MHz) 920 Figure 8. Performance in Narrowband Circuit 120 C, CAPACITANCE (pF) 100 Ciss 80 60 Coss 40 20 Crss 0 0 10 20 30 40 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 50 Figure 9. Capacitance versus Voltage Table 1. Common Source S-Parameters (VDS = 28 V, ID = 2.0 A) f MHz S11 400 |S11| 0.921 450 0.922 500 S21 182 |S21| 2.23 181 1.95 0.924 180 550 0.926 600 S12 52 |S12| 0.009 49 0.009 1.70 46 179 1.49 0.929 178 650 0.932 700 0.936 750 S22 39 |S22| 0.824 184 53 0.832 184 0.010 64 0.841 184 42 0.011 72 0.851 183 1.31 38 0.013 78 0.860 183 177 1.16 35 0.015 81 0.870 182 176 1.03 31 0.017 82 0.881 182 0.940 176 0.93 28 0.019 82 0.892 181 800 0.945 175 0.84 26 0.021 82 0.904 180 850 0.951 174 0.78 24 0.023 80 0.917 180 900 0.957 173 0.72 24 0.025 78 0.929 179 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF373 MRF373S 5.2-263 LAST ORDER 31JUL04 13 30 IRL, INPUT RETURN LOSS (dB) 400 mA 14 LIFETIME BUY G p, POWER GAIN (dB) G p, POWER GAIN (dB) IDQ = 500 mA 15 VDD = 28 V IDQ = 200 mA Pout = 60 W (CW) 20 17 16 58 IRL LAST SHIP 31JAN05 VDD = 28 V f = 860 MHz , DRAIN EFFICIENCY (%) 18 C19A R3 R5T R4 R2A L3A R7A C15 C18A L5 C2 R1A C3A C5 C4 C1 L6 L2 C6 L4 C3B L1A C7 C8 C9 C10 R1B C14A C12 C11 L1B C13 C14B C18B R7B L3B C16B R2B C17B MRF373S LIFETIME BUY C19B Vertical Balun Mounting Detail Output 2 (12.5 ohm microstrip) Motorola Vertical 660 MHz Balun Rogers RO3010 (50 mil thick) Output 1 (12.5 ohm microstrip) PCB Substrate (30 mil thick) Note: Trim Balun PCB so that a 35 mil "tab" fits into the main PCB "slot" resulting in Balun solder pads being level with the PCB substrate solder pads when fully inserted. Input (50 ohm microstrip) Ground 55 mil slot cut out to accept Balun Figure 10. MRF373S Broadband Push-Pull Component Layout MRF373 MRF373S 5.2-264 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA LAST SHIP 31JAN05 C17A C16A LAST ORDER 31JUL04 R6 Table 2. MRF373S Broadband Push-Pull Application Parts List C2, C4, C10 10 pF, AVX, P12101J100GBT C3A, B 120 pF, 300 V, AVX, AQ149M121JAJBE C5, C6, C9 12 pF, AVX, P12101J120GBT C7, C8 18 pF, AVX, P12101J180GBT C11 6.8 pF, AVX, P12101J6R8BBT C12 4.7 pF, AVX, P12101J4R7BBT C13, C18A, B 3.3 pF, AVX, P12101J3R3BBT C14A, B 100 pF, 500 V, AVX, AQ147M101JAJBE C15 2.7 pF, AVX, P12101J2R7BBT C16A, B 3.3 mF, 100 V, Vitramon P/N VJ3640Y335KXBAT C17A, B, C19A, B 22 mF, 35 V, Kemet P/N T491D226K35AS L1A, B, L3A, B, L4, L5 8.0 nH, Coilcraft P/N A03T L2, L6 12.5 nH, Coilcraft P/N A04T R1A, B 22 , Vishay Dale Chip Resistor, 1/4 W (1206) R2A, B 10 , Vishay Dale Chip Resistor, 1/4 W (1206) R3 390 , Vishay Dale Chip Resistor (1206) R4 2.4 k, Vishay Dale Chip Resistor (1206) R5T 470 Thermistor, KOA SPEER MOT P/N 0680149M01 PCB MRF373 PP Printed Circuit Board Rev 2C, Rogers RO4350, Height 30 mils, r = 3.48 Balun A, B Vertical 660 MHz Broadband Balun, Printed Circuit Board Rev 01, Rogers RO3010, Height 50 mils, r = 10.2 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA LAST SHIP 31JAN05 Description 1.0 pF, AVX, P12101J1R0BBT LAST ORDER 31JUL04 LIFETIME BUY Designation C1 MRF373 MRF373S 5.2-265 VDD = 28 Vdc DFREQUENCY = 6 MHz IDQ = 250 mA per side -20 -25 -30 470 MHz -35 660 MHz -40 -45 13 12 860 MHz 11 660 MHz 10 470 MHz 9 860 MHz -50 8 1 10 100 Pout, OUTPUT POWER (WATTS PEP) 1000 Figure 11. Intermodulation Distortion versus Output Power (MRF373S Broadband Push-Pull Fixture) MRF373 MRF373S 5.2-266 1 10 100 Pout, OUTPUT POWER (WATTS PEP) 1000 Figure 12. Broadband Power Gain versus Output Power (MRF373S Broadband Push-Pull Fixture) 50 , DRAIN EFFICIENCY (%) D LIFETIME BUY VDD = 28 Vdc DFREQUENCY = 6 MHz IDQ = 250 mA per side 14 VDD = 28 Vdc DFREQUENCY = 6 MHz IDQ = 250 mA per side 40 860 MHz 660 MHz 30 470 MHz 20 10 0 1 10 100 Pout, OUTPUT POWER (WATTS PEP) 1000 Figure 13. Efficiency versus Output Power (MRF373S Broadband Push-Pull Fixture) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA LAST ORDER 31JUL04 -15 LAST SHIP 31JAN05 15 -10 Gps, POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL TWO-TONE BROADBAND CHARACTERISTICS MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF374 N-Channel Enhancement-Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 470 - 860 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 28 volt transmitter equipment. * Typical Two-Tone Performance @ 860 MHz, 28 Volts, Narrowband Fixture Output Power - 100 Watts PEP Power Gain - 13.5 dB Efficiency - 36% IMD - -31 dBc * Typical Performance at 860 MHz, 28 Volts, Broadband Fixture Output Power - 100 Watts PEP Power Gain - 12 dB Efficiency - 36% IMD - -34 dBc * 100% Tested for Load Mismatch Stress at All Phase Angles with 5:1 VSWR @ 28 Vdc, 860 MHz, 100 Watts CW * Excellent Thermal Stability * Characterized with Differential Large-Signal Impedance Parameters 470 - 860 MHz, 100 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET CASE 375F-02, STYLE 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS 20 Vdc Drain Current - Continuous (per Side) ID 7 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 270 1.25 W W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Symbol Max Unit RJC 0.65 C/W Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF374 5.2-267 LAST ORDER 31JUL04 RF Power Field-Effect Transistor LAST SHIP 31JAN05 The RF MOSFET Line ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 - - Vdc Zero Gate Voltage Drain Current (per Side) (VDS = 28 V, VGS = 0 V) IDSS - - 1 Adc Gate-Source Leakage Current (per Side) (VGS = 20 V, VDS = 0 V) IGSS - - 1 Adc Gate Threshold Voltage (per Side) (VDS = 10 V, ID = 200 A per Side) VGS(th) 2 3.5 4 Vdc Gate Quiescent Voltage (per Side) (VDS = 28 V, ID = 100 mA per Side) VGS(Q) 3 4.2 5 Vdc Drain-Source On-Voltage (per Side) (VGS = 10 V, ID = 3 A per Side) VDS(on) - 0.56 0.8 Vdc Forward Transconductance (per Side) (VDS = 10 V, ID = 3 A per Side) gfs 2.2 2.8 - S Input Capacitance (per Side) (VDS = 28 V, VGS = 0 V, f = 1 MHz) Ciss - 80 - pF Output Capacitance (per Side) (VDS = 28 V, VGS = 0 V, f = 1 MHz) Coss - 45 - pF Reverse Transfer Capacitance (per Side) (VDS = 28 V, VGS = 0 V, f = 1 MHz) Crss - 3.5 - pF Common Source Power Gain (VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA, f1 = 857 MHz, f2 = 863 MHz) Gps 12.5 13.5 - dB Drain Efficiency (VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA, f1 = 857 MHz, f2 = 863 MHz) 30 36 - % Intermodulation Distortion (VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 400 mA, f1 = 857 MHz, f2 = 863 MHz) IMD -28 -31 - dB Drain-Source Breakdown Voltage (per Side) (VGS = 0 V, ID =1 A per Side) LIFETIME BUY ON CHARACTERISTICS DYNAMIC CHARACTERISTICS (1) LAST SHIP 31JAN05 OFF CHARACTERISTICS Load Mismatch (VDD = 28 Vdc, Pout = 100 W CW, IDQ = 400 mA, f = 860 MHz, VSWR 5:1 at All Phase Angles of Test) No Degradation in Output Power TYPICAL TWO-TONE BROADBAND Common Source Power Gain (VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 500 mA, f1 = 857 MHz, f2 = 863 MHz) Gps - 12 - dB Drain Efficiency (VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 500 mA, f1 = 857 MHz, f2 = 863 MHz) - 36 - % Intermodulation Distortion (VDD = 28 Vdc, Pout = 100 W PEP, IDQ = 500 mA, f1 = 857 MHz, f2 = 863 MHz) IMD - - 34 - dB (1) Each side of device measured separately. (2) Measured in push-pull configuration. MRF374 5.2-268 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA LAST ORDER 31JUL04 FUNCTIONAL CHARACTERISTICS, TWO-TONE TESTING (2) C14A C13A LAST SHIP 31JAN05 C7A L2A R2 R1A C4A C5 C2 C3 C1 L1A C9A C10 C6 C12A C11 C9B C4B C12B L1B R1B L2B C8B C7B C13B R3B C14B LIFETIME BUY MRF374 Vertical Balun Mounting Detail Output 2 (12.5 ohm microstrip) Motorola Vertical 860 MHz Balun Rogers RO3010 (50 mil thick) Output 1 (12.5 ohm microstrip) PCB Substrate (30 mil thick) Note: Trim Balun PCB so that a 35 mil "tab" fits into the main PCB "slot" resulting in Balun solder pads being level with the PCB substrate solder pads when fully inserted. Input (50 ohm microstrip) Ground 55 mil slot cut out to accept Balun Figure 1. Narrowband Component Layout MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF374 5.2-269 LAST ORDER 31JUL04 C8A R3A L2A VDD VGG C7A Z10A Z11A Z12A Z13A R2 B1 Z1 Z2A C2 Z2B Z3A Z4A Z3B C3 B2 Z15 Z14A RF OUTPUT C12A C4A C1 C14A L1A Z9A RF INPUT C13A C9A R1A Z5A Z6A C5 Z4B Z7A Z8A C6 Z5B Z6B C10 DUT C11 Z7B Z8B C4B R1B Z9B L2B Z10B Z11B Z12B LIFETIME BUY VGG MRF374 5.2-270 R3B C8B C9B C7B Z13B Z14B C12B L1B VDD Figure 2. Narrowband Test Circuit C13B C14B Table 1. Narrowband Component Designations and Values Designation Description C1 0.3 pF, ATC, Case B C2 3.0 pF, ATC, Case B C3, C5 1.8 pF, ATC, Case B C4A, B, C12A, B 47 pF, ATC, Case B C6 10 pF, ATC, Case B C7A, B 68 pF, ATC, Case B C8A, B 10 mF, 35 V Kemet P/N T491D106K35AS C9A, B 15 pF, ATC, Case B C10 5.6 pF, ATC, Case B C11 5.1 pF, ATC, Case B C12 3.0 pF, ATC, Case B C13A, B 2.2 mF, 100 V, Vishay P/N VJ3640Y225KXBAT C14A, B 22 mF, 35 V Kemet P/N T491D226K35AS L1A, B 5.0 nH, Coilcraft P/N A02T L2A, B 8.0 nH, Coilcraft P/N A03T R1A, B 180 , Vishay Dale Chip Resistor, 1/4 W (1210) R2 10 , Dale Axial Carbon Resistor, 1 W R3A, B 3.3 k, Vishay Dale Chip Resistor (1206) PCB MRF374 Printed Circuit Board Rev 03, Rogers RO4350, Height 30 mils, r = 3.48 Balun B1A, B 860 MHz Vertical Balun, 4:1 Impedance Translation (i.e., 12.5 : 50 ), Printed Circuit Board Rev 01, Rogers RO3010, Height 50 mils, r = 10.2 Connectors N-Type (female), M/A-Com P/N 3052-1648-10 Heatsink Motorola P/N 99-1RH-2C 3 X 5 Bedstead Insert Motorola P/N 99-7RI-1D Insert for LDMOS 650 in 3 X 5 Bedstead Protective Cover Motorola P/N 99-2PC-2B End Plates 2) Motorola P/N 94-7GB-1EPL, End Plate for Type-N Connector Banana Jack and Nut 2) Johnson P/N 108-0904-001 Brass Banana Jack 2) H.H. Smith P/N SM-101 W W m MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA LAST SHIP 31JAN05 C8A LAST ORDER 31JUL04 R3A TYPICAL TWO-TONE NARROWBAND CHARACTERISTICS 600 mA 13 400 mA 12 VDD = 28 Vdc FREQUENCY = 6 MHz fc = 860 MHz 10 10 100 Pout, OUTPUT POWER (WATTS PEP) -25 IDQ = 200 mA 800 mA 1000 mA -30 -35 -40 600 mA -45 400 mA -50 1 1000 100 10 Pout, OUTPUT POWER (WATTS PEP) Figure 3. Power Gain versus Peak Output Power 1000 Figure 4. Intermodulation Distortion versus Peak Output Power 20 60 VDD = 28 Vdc FREQUENCY = 6 MHz IDQ = 400 mA fc = 860 MHz 50 40 G ps , POWER GAIN (dB) IRL, INPUT RETURN LOSS (dB) h D, DRAIN EFFICIENCY (%) LIFETIME BUY 1 -20 30 400 mA 20 10 50 15 45 Gps 10 40 IRL 5.0 35 VDD = 28 Vdc FREQUENCY = 6 MHz IDQ = 400 mA hD 30 0 0 1 100 10 Pout, OUTPUT POWER (WATTS PEP) 1000 , DRAIN EFFICIENCY (%) D 200 mA 11 VDD = 28 Vdc FREQUENCY = 6 MHz fc = 860 MHz -15 820 Figure 5. Drain Efficiency versus Peak Output Power 830 840 850 860 f, FREQUENCY (MHz) 870 880 890 Figure 6. Performance in Narrowband Test Circuit 120 C, CAPACITANCE (pF) 100 Ciss 80 60 Coss 40 20 Crss 0 0 20 30 40 10 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 50 Figure 7. Capacitance versus Voltage MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF374 5.2-271 LAST SHIP 31JAN05 800 mA 14 -10 LAST ORDER 31JUL04 IDQ = 1000 mA 15 G ps, POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) 16 C19 R2A C18A R7A C16A C15A L3A C17A L5 C2 C4 C5 C1 L6 L1A R1A C3A C8A C6 L4 C7 C13 C14B C9B R1B C14A C12 C11 C8B C3B R7B C9A C10 L2 L1B C17B L3B C18B C15B C16B R2B LIFETIME BUY MRF374 Vertical Balun Mounting Detail Output 2 (12.5 ohm microstrip) Motorola Vertical 660 MHz Balun Rogers RO3010 (50 mil thick) Output 1 (12.5 ohm microstrip) PCB Substrate (30 mil thick) Note: Trim Balun PCB so that a 35 mil "tab" fits into the main PCB "slot" resulting in Balun solder pads being level with the PCB substrate solder pads when fully inserted. Input (50 ohm microstrip) 55 mil slot cut out to accept Balun Ground Figure 8. Broadband Component Layout MRF374 5.2-272 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA LAST SHIP 31JAN05 R6 R3 R5T LAST ORDER 31JUL04 R4 Table 2. Broadband Component Designations and Values C2 8.2 pF, ATC, Case B C3A, B, C14A, B 100 pF, ATC, Case B C4 7.5 pF, ATC, Case B C5 3.0 pF, ATC, Case B C6 9.1 pF, ATC, Case B C7 15 pF, ATC, Case B C8A, B 12 pF, ATC, Case B C9A, B 4.7 pF, ATC, Case B C10 10 pF, ATC, Case B C11 3.6 pF, ATC, Case B C12 3.0 pF, ATC, Case B C13 2.7 pF, ATC, Case B C15A, B 3.3 mF, 100 V, Vitramon P/N VJ3640Y335KXBAT C16A, B 22 mF, 35 V, Kemet P/N T491D226K035AS C17A, B 3.9 pF, ATC, Case B C18A, B 2.2 mF, 50 V, Vitramon P/N VJ2225Y225KXAAT C19 10 mF, 35 V, Kemet P/N T491D106K035AS L1A, B, L3A, B, L4, L5 8.0 nH, Coilcraft P/N A03T L2, L6 12.5 nH, Coilcraft P/N A04T R1A, B 22 , Vishay Dale Chip Resistor, 1/4 W (1206) R2A, B, R7A, B 10 , Vishay Dale Chip Resistor, 1/4 W (1206) R3 390 , Vishay Dale Chip Resistor (1206) R4 2.4 k, Vishay Dale Chip Resistor (1206) R5T 470 Thermistor, KOA SPEER MOT P/N 0680149M01 R6 6.8 k, Vishay Dale Resistor, 1/2 W (Axial Lead) PCB MRF374 Printed Circuit Board Rev 03, Rogers RO4350, Height 30 mils, r = 3.48 Vertical 660 MHz Broadband Balun, Printed Circuit Board Rev 01, Rogers RO3010, Height 50 mils, r = 10.2 Balun B1, B2 f MHz Zin ZOL* 470 5.79 - j0.97 4.54 + j2.82 660 4.52 + j0.50 4.21 + j3.04 860 3.16 + j3.73 3.86 + j3.44 Zin LAST SHIP 31JAN05 Description 0.8 pF, ATC, Case B LAST ORDER 31JUL04 LIFETIME BUY Designation C1 = Input impedance from the transistor. ZOL* = Complex conjugate of the optimum load at a given voltage, P1dB, gain, efficiency, bias current and frequency. Note: Zin and ZOL are measured impedances taken from gate-to-gate and drain-to- drain, respectively. Table 3. Broadband Push-Pull Balanced Fixture Impedances MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF374 5.2-273 -25 -30 660 MHz -35 -40 860 MHz 470 MHz -50 13 860 MHz 12 660 MHz 470 MHz 11 10 VDD = 28 Vdc FREQUENCY = 6 MHz IDQ = 500 mA 9 -45 1 LIFETIME BUY G ps, POWER GAIN (dB) -20 14 8 10 100 Pout, OUTPUT POWER (WATTS PEP) 1000 1 100 10 Pout, OUTPUT POWER (WATTS PEP) Figure 10. Broadband Power Gain versus Output Power Figure 9. Broadband Intermodulation Distortion versus Output Power MRF374 5.2-274 1000 60 860 MHz 50 40 660 MHz 30 470 MHz 20 VDD = 28 Vdc FREQUENCY = 6 MHz IDQ = 500 mA 10 0 1 10 100 Pout, OUTPUT POWER (WATTS PEP) 1000 Figure 11. Broadband Efficiency versus Output Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA LAST ORDER 31JUL04 VDD = 28 Vdc FREQUENCY = 6 MHz IDQ = 500 mA -15 LAST SHIP 31JAN05 15 -10 , DRAIN EFFICIENCY (%) D IMD, INTERMODULATION DISTORTION (dBc) TYPICAL TWO-TONE BROADBAND CHARACTERISTICS MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large-signal output and driver amplifier stages in the 30 to 500 MHz frequency range. * Specified 28 Volt, 400 MHz Characteristics -- Output Power = 125 W Typical Gain = 10 dB Efficiency = 55% (Typ) 125 W, 30 to 500 MHz CONTROLLED "Q" BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON * Built-In Input Impedance Matching Networks for Broadband Operation * Push-Pull Configuration Reduces Even Numbered Harmonics * Gold Metallization System for High Reliability * 100% Tested for Load Mismatch * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. 2 6 5, 8 1, 4 7 3 CASE 744A-01, STYLE 1 The MRF392 is two transistors in a single package with separate base and collector leads and emitters common. This arrangement provides the designer with a space saving device capable of operation in a push-pull configuration. PUSH-PULL TRANSISTORS MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage Rating VCEO 30 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 4.0 Vdc Collector Current -- Continuous IC 16 Adc Total Device Dissipation @ TC = 25C (1) Derate above 25C PD 270 1.54 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Symbol Max Unit RJC 0.65 C/W Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case NOTE: 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF push-pull amplifier. REV 8 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF392 5.2-275 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) V(BR)CEO 30 -- -- Vdc Collector-Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) V(BR)CES 60 -- -- Vdc Emitter-Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) V(BR)EBO 4.0 -- -- Vdc ICBO -- -- 5.0 mAdc hFE 40 60 100 -- Cob -- 75 95 pF Common-Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 125 W, f = 400 MHz) Gpe 8.0 10 -- dB Collector Efficiency (VCC = 28 Vdc, Pout = 125 W, f = 400 MHz) 50 55 -- % Load Mismatch (VCC = 28 Vdc, Pout = 125 W, f = 400 MHz, VSWR = 30:1, all phase angles) OFF CHARACTERISTICS (1) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ON CHARACTERISTICS (1) DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS (1) Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS (2) -- See Figure 1 No Degradation in Output Power NOTES: 1. Each transistor chip measured separately. 2. Both transistor chips operating in push-pull amplifier. L5 C11 B1 C12 C13 C14 C15 + 28 V - B2 L3 L1 + C9 C1 Z1 Z2 C4 C3 Z1 Z2 Z4 Z3 C5 Z5 C6 Z6 C7 C8 Z3 Z4 C2 Z5 Z6 C10 D.U.T. L2 L4 L6 C16 C1, C2 -- 240 pF, 100 Mil Chip Cap (ATC) or Equivalent C3 -- 3.6 pF, 100 Mil Chip Cap (ATC) or Equivalent C4, C8 -- 8.2 pF, 100 Mil Chip Cap (ATC) or Equivalent C5, C6 -- 20 pF, 100 Mil Chip Cap (ATC) or Equivalent C7 -- 18 pF, Mini Unelco or Equivalent C9, C10 -- 270 pF, 100 Mil Chip Cap (ATC) or Equivalent C11, C12, C16, C17 -- 470 pF 100 Mil Chip Cap (ATC) or Equivalent C13, C18 -- 680 pF Feedthru C14, C19 -- 0.1 F Erie Redcap or Equivalent C15 -- 20 F, 50 V L1, L2 -- 0.15 H Molded Choke With Ferrite Bead L3, L4 -- 2-1/2 Turns #20 AWG, 0.200 ID L5, L6 -- 3-1/2 Turns #18 AWG, 0.200 ID C17 C18 C19 B1 -- Balun, 50 Semi-Rigid Coaxial Cable 86 Mil OD, 2 L B2 -- Balun, 50 Semi-Rigid Coaxial Cable 86 Mil OD, 2 L Z1 -- Microstrip Line 270 Mil L x 125 Mil W Z2 -- Microstrip Line 375 Mil L x 125 Mil W Z3 -- Microstrip Line 280 Mil L x 125 Mil W Z4 -- Microstrip Line 300 Mil L x 125 Mil W Z5 -- Microstrip Line 350 Mil L x 125 Mil W Z6 -- Microstrip Line 365 Mil L x 125 Mil W Board Material -- 0.0625 Teflon Fiberglass r = 2.5 0.05 1 oz. Cu. Board Material -- CLAD, Double Sided Figure 1. 400 MHz Test Fixture MRF392 5.2-276 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 80 f = 100 MHz 140 225 MHz 400 MHz 120 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 160 500 MHz 100 80 60 40 VCC = 28 V 20 0 0 5 10 15 f = 100 MHz 70 225 MHz 400 MHz 60 50 40 30 20 VCC = 13.5 V 10 0 25 20 2 0 6 4 10 8 12 14 16 Pin, INPUT POWER (WATTS) Figure 2. Output Power versus Input Power Figure 3. Output Power versus Input Power 160 Pin = 14 W 140 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 20 160 Pin = 10 W 7W 120 100 5W 80 60 40 20 0 10 18 Pin, INPUT POWER (WATTS) 14 16 18 20 22 24 26 120 10 W 100 7W 80 60 40 20 f = 225 MHz 12 140 0 10 30 28 f = 400 MHz 12 14 16 18 20 22 24 26 28 VCC, SUPPLY VOLTAGE (VOLTS) VCC, SUPPLY VOLTAGE (VOLTS) Figure 4. Output Power versus Supply Voltage Figure 5. Output Power versus Supply Voltage 30 Zin & ZOL* are given from base-to-base and collector-to-collector respectively. f = 100 MHz 225 500 CAPACITIVE REACTANCE COMPONENT (-jX) 400 500 450 Zin INDUCTIVE REACTANCE COMPONENT (+jX) 450 ZOL* 400 225 VCC = 28 V, Pout = 125 W f = 100 MHz Zo = 20 f MHz Zin OHMS ZOL* OHMS 100 225 400 450 500 0.72 + j0.44 0.72 + j2.62 3.88 + j5.72 3.84 + j2.8 1.26 + j3.01 9.0 - j6.0 5.2 - j1.8 3.6 + j0.53 3.2 + j1.2 3.0 + j2.0 ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a ZOL* = given output power, voltage and frequency. Figure 6. Series Equivalent Input/Output Impedance MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF392 5.2-277 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF393 . . . designed primarily for wideband large-signal output and driver amplifier stages in the 30 to 500 MHz frequency range. * Specified 28 Volt, 500 MHz Characteristics -- Output Power = 100 W Typical Gain = 9.5 dB (Class AB); 8.5 dB (Class C) Efficiency = 55% (Typ) 100 W, 30 to 500 MHz CONTROLLED "Q" BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON * Built-In Input Impedance Matching Networks for Broadband Operation * Push-Pull Configuration Reduces Even Numbered Harmonics * Gold Metallization System for High Reliability * 100% Tested for Load Mismatch * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. 2 6 5, 8 1, 4 7 3 CASE 744A-01, STYLE 1 The MRF393 is two transistors in a single package with separate base and collector leads and emitters common. This arrangement provides the designer with a space saving device capable of operation in a push-pull configuration. PUSH-PULL TRANSISTORS MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage Rating VCEO 30 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 4.0 Vdc Collector Current -- Continuous IC 16 Adc Total Device Dissipation @ TC = 25C (1) Derate above 25C PD 270 1.54 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Symbol Max Unit RJC 0.65 C/W Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case NOTE: 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF push-pull amplifier. REV 7 MRF393 5.2-278 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) V(BR)CEO 30 -- -- Vdc Collector-Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) V(BR)CES 60 -- -- Vdc Emitter-Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) V(BR)EBO 4.0 -- -- Vdc ICBO -- -- 5.0 mAdc hFE 20 -- 100 -- Cob 40 75 95 pF Common-Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 100 W, f = 500 MHz) Gpe 7.5 8.5 -- dB Collector Efficiency (VCC = 28 Vdc, Pout = 100 W, f = 500 MHz) 50 55 -- % Load Mismatch (VCC = 28 Vdc, Pout = 100 W, f = 500 MHz, VSWR = 30:1, all phase angles) OFF CHARACTERISTICS (1) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ON CHARACTERISTICS (1) DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS (1) Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS (2) -- See Figure 1 No Degradation in Output Power NOTES: 1. Each transistor chip measured separately. 2. Both transistor chips operating in push-pull amplifier. L5 C10 C9 B1 C11 + 28 V B2 L3 L1 C12 C7 C1 Z3 Z5 Z1 C3 C6 C5 C4 Z2 Z4 C2 L2 Z6 C8 D.U.T. L4 L6 C14 C13 C1, C2, C7, C8 -- 240 pF 100 mil Chip Cap C3 -- 15 pF 100 mil Chip Cap C4 -- 24 pF 100 mil Chip Cap C5 -- 33 pF 100 mil Chip Cap C6 -- 12 pF 100 mil Chip Cap C9, C13 -- 1000 pF 100 mil Chip Cap C10, C14 -- 680 pF Feedthru Cap C11, C15 -- 0.1 F Ceramic Disc Cap C12, C16 -- 50 F 50 V C15 C16 L1, L2 -- 0.15 H Molded Choke with Ferrite Bead L3, L4 -- 2-1/2 Turns #20 AWG 0.200 ID L5, L6 -- 3-1/2 Turns #18 AWG 0.200 ID B1, B2 -- Balun 50 Semi Rigid Coax, 86 mil OD, 4 Long Z1, Z2 -- 850 mil Long x 125 mil W. Microstrip Z3, Z4 -- 200 mil Long x 125 mil W. Microstrip Z5, Z6 -- 800 mil Long x 125 mil W. Microstrip Board Material -- 0.0325 Teflon-Fiberglass, r = 2.56, Board Material -- 1 oz. Copper Clad both sides. Figure 1. 500 MHz Test Fixture MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF393 5.2-279 CLASS C 80 225 MHz 140 400 MHz 120 500 MHz 100 80 60 40 20 0 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) f = 100 MHz 2 4 6 8 10 12 14 Pin, INPUT POWER (WATTS) 16 60 50 500 MHz 40 30 20 10 VCC = 28 V 0 225 MHz 400 MHz f = 100 MHz 70 18 0 20 VCC = 13.5 V 0 Figure 2. Output Power versus Input Power 2 4 6 8 10 12 14 Pin, INPUT POWER (WATTS) 16 18 20 Figure 3. Output Power versus Input Power CLASS C 120 120 Pin = 16 W 8W 100 6W 80 60 40 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) Pin = 10 W 100 12 W 80 8W 60 40 f = 225 MHz 20 12 16 20 24 VCC, SUPPLY VOLTAGE (VOLTS) f = 500 MHz 20 28 12 Figure 4. Output Power versus Supply Voltage f = 100 MHz ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a 2 ZOL* = given output power, voltage and frequency. 4 225 2 400 Zin 4 ZOL* 225 6 Zo = 20 f = 100 MHz 6 500 8 500 8 400 VCC = 28 V, Pout = 100 W f MHz Zin ZOL* 100 225 400 500 0.85 + j0 0.58 + j2.6 3.00 + j5.9 4.80 + j3.0 7.8 - j5.6 5.0 - j3.2 3.2 - j0.6 2.9 + j1.2 140 120 100 80 60 Figure 6. Series Equivalent Input/Output Impedance MRF393 5.2-280 f = 500 MHz VCC = 28 V ICQ = 200 mA 40 20 0 NOTE: Zin & ZOL* are given from base-to-base NOTE: and collector-to-collector respectively. 28 Figure 5. Output Power versus Supply Voltage Pout , OUTPUT POWER (WATTS) 2 4 16 20 24 VCC, SUPPLY VOLTAGE (VOLTS) 0 2 4 6 8 10 12 14 Pin, INPUT POWER (WATTS) 16 18 20 Figure 7. Class AB Output Power versus Input Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF858S NPN Silicon RF Power Transistor Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800 - 960 MHz. CLASS A 800 - 960 MHz 3.6 W (CW), 24 V NPN SILICON RF POWER TRANSISTOR * Specified for VCE = 24 Vdc, IC = 0.5 Adc Characteristics Output Power = 3.6 Watts CW Minimum Power Gain = 11 dB Minimum ITO = + 44.5 dBm Typical Noise Figure = 6 dB * Characterized with Small-Signal S-Parameters and Series Equivalent Large-Signal Parameters from 800 - 960 MHz * Silicon Nitride Passivated * 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ 24 Vdc, IC = 0.5 Adc and Rated Output Power CASE 319A-02, STYLE 2 * Will Withstand RF Input Overdrive of 0.85 W CW * Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 30 Vdc Collector-Base Voltage VCBO 55 Vdc Emitter-Base Voltage VEBO 4 Vdc Total Device Dissipation @ TC = 50C Derate above 50C PD 20 0.138 Watts W/C Operating Junction Temperature TJ 200 C Tstg - 65 to +150 C Symbol Max Unit RJC 6.9 C/W Storage Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance (TJ = 150C, TC = 50C) ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 20 mA, IB = 0) V(BR)CEO 28 35 -- Vdc Collector-Emitter Breakdown Voltage (IC = 20 mA, VBE = 0) V(BR)CES 55 85 -- Vdc Collector-Base Breakdown Voltage (IC = 20 mA, IE = 0) V(BR)CBO 55 85 -- Vdc Emitter-Base Breakdown Voltage (IE = 1 mA, IC = 0) V(BR)EBO 4 5 -- Vdc ICES -- -- 1 mA OFF CHARACTERISTICS Collector Cutoff Current (VCB = 24 V, IE = 0) REV 3 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF858S 5.2-281 ELECTRICAL CHARACTERISTICS -- continued Characteristic Symbol Min Typ Max Unit hFE 30 60 120 -- Cob -- 6.5 8 pF Common-Emitter Power Gain (VCE = 24 V, IC = 0.5 A, f = 840 - 900 MHz, Power Output = 3.6 W) Pg 11 12 -- dB Load Mismatch (Po = 3.6 W) (VCE = 24 V, IC = 0.5 A, f = 840 MHz, Load VSWR = 30:1, All Phase Angles) RF Input Overdrive (VCE = 24 V, IC = 0.5 A, f = 840 MHz) No degradation Pin(over) -- -- 0.85 W Third Order Intercept Point (VCE = 24 V, IC = 0.5 A) (f1 = 900 MHz, f2 = 900.1 MHz, Meas. @ IMD 3rd Order = - 40 dBc) ITO + 44.5 + 45.5 -- dBm Noise Figure (VCE = 24 V, IC = 0.5 A, f = 900 MHz) NF -- 6 -- dB Input Return Loss (VCE = 24 V, IC = 0.5 A, f = 840 - 900 MHz, Power Output = 3.6 W) IRL -- - 12 -9 dB ON CHARACTERISTICS DC Current Gain (IC = 0.1 A, VCE = 5 V) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 24 V, f = 1 MHz) FUNCTIONAL CHARACTERISTICS No Degradation in Output Power Table 1. Common Emitter S-Parameters S11 S21 S12 S22 VCE (V) IC (A) f (MHz) |S11| |S21| |S12| |S22| 24 0.5 800 820 840 860 880 900 920 940 960 0.942 0.942 0.941 0.940 0.941 0.940 0.940 0.940 0.940 167 166 166 166 165 165 165 164 164 1.493 1.453 1.415 1.379 1.351 1.320 1.289 1.252 1.222 50 50 49 48 47 46 45 44 43 0.027 0.027 0.028 0.028 0.029 0.030 0.030 0.031 0.031 58 58 59 59 59 59 59 59 59 0.538 0.541 0.545 0.550 0.553 0.557 0.562 0.566 0.570 - 165 - 164 - 165 - 165 - 165 - 165 - 165 - 165 - 165 Table 2. Zin and ZOL* versus Frequency f (MHz) 840 870 900 Zin (Ohms) 1.1 1.1 1.2 ZOL* (Ohms) 2.9 3.5 3.5 9.9 9.5 9 - 14.4 - 14.6 - 14.5 VCE = 24 V, IC = 0.5 A, Po = 3.6 W ZOL* = Conjugate of optimum load impedance into which the device operates at a given output power, voltage and frequency. MRF858S 5.2-282 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA + VCE R8 R1 R2 F1 V_SUPPLY C1 Q1 Q2 R3 R4 L1 R5 R7 C15 + C2 R6 L2 B1 C3 B2 C4 C7 C5 C16 L3 + C6 L4 TL1 C9 C8 DUT INPUT C15 TL5 OUTPUT TL4 C12 C10 C13 TL2 Short Ferrite Bead, Fair Rite (2743021447) 250 F, 50 Vdc Electrolytic Capacitor 10 F, 50 Vdc Electrolytic Capacitor 0.1 F, Chip Capacitor 100 pF, Chip Capacitor 43 pF, 100 Mil Chip Capacitor 10 pF, Mini-Unelco 5 pF, Mini-Unelco 0.8 - 8.0 pF, Johanson Gigatrim 1000 pF, Chip Capacitor 1 A Micro-Fuse 10 Turns, 20 AWG, 0.150 ID (10 1/2 W Resistor) 4 Turns, 16 AWG, 0.101 ID 0.5 18 AWG Wire MMBT2222ALT1, NPN Transistor BD136, PNP Transistor C14 0.685 TL3 B1, B2 C1 C2, C5 C3, C6 C4, C7 C8, C15 C9, C10 C11 C12, C13, C14 C15, C16 F1 L1, L2 L3 L4 Q1 Q2 C11 R1 R2 R3 R4 R5 R6 R7 R8 TL1, TL5 TL2 TL3 TL4 V_Supply VCE Board 390 , 1/4 W 500 Potentiometer, 1/4 W 7.5K , 1/4 W 2 x 4.7K , 1/4 W 56 , 2 W 75 , 1/4 W 4.7 , 1/4 W 4 , 10 W 50 , Microstrip Transmission Line Microstrip Transmission Line Microstrip Transmission Line Microstrip Transmission Line + 26 Vdc 0.5 Vdc Due to Resistor Tolerance + 24 Vdc @ 0.5 A 0.030 Glass-Teflon 2 oz. Cu, r = 2.55 Figure 1. MRF858S Class A RF Test Fixture Schematic MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF858S 5.2-283 TYPICAL CHARACTERISTICS 13.5 4 3.5 Gpe 12.5 3 VCC = 24 Vdc IC = 500 mA Pout = 3.6 W (CW) 12 2.5 11.5 2 11 VSWR in , INPUT VSWR G pe , POWER GAIN (dB) 13 1.5 VSWR 10.5 830 840 850 860 870 880 f, FREQUENCY (MHz) 890 1 910 900 Figure 2. Performance in Broadband Circuit 15 1 4 13 Gpe 5 VCC = 24 Vdc IC = 500 mA f = 870 MHz 4 1 2 11 3 Pout 2 10 1 9 0 8 0.1 0 0.2 0.3 0.4 0.5 0.6 0.7 Pin, INPUT POWER (WATTS) 0.8 0.9 1000 500 0 1 Tj = 150C Tf = 50C 1500 IC (mAdc) 6 2000 G pe , POWER GAIN (dB) Pout , OUTPUT POWER (WATTS) 7 0 2 4 6 Figure 3. Output Power & Power Gain versus Input Power 10 12 14 16 18 20 VCE (Vdc) 22 24 26 28 Figure 4. DC SOA 1.00E+08 MTBF FACTOR (HOURS x AMPS2) 1100 1000 900 IC (mAdc) 8 Tj = 175C Tf = 50C 800 700 600 50 00 2 4 6 8 10 12 14 16 18 20 22 24 26 28 VCE (Vdc) Figure 5. DC SOA (This device is MTBF limited for VCE < 20 Vdc.) MRF858S 5.2-284 1.72E+07 1.00E+07 3.58E+06 8.57E+05 1.00E+06 2.34E+05 7.17E+04 1.00E+05 2.43E+04 8.98E+03 1.00E+04 1.00E+03 100 120 3.59E+03 1.53E+03 140 160 180 200 220 240 260 TJ, JUNCTION TEMPERATURE (C) Figure 6. MTBF Factor versus Junction Temperature MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA R3 R2 R1 Q1 C5 + R5 R7 R6 C6 Q1 R8 R4 B2 C15 + C2 L2 B1 C4 C3 L1 C7 L3 C9 L4 C15 C16 C11 C8 C12 C11 C10 C13 C14 MRF858S Figure 7. MRF858S Test Fixture Component Layout MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF858S 5.2-285 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF897 Designed for 24 Volt UHF large-signal, common emitter, class-AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800 - 970 MHz. * Specified 24 Volt, 900 MHz Characteristics Output Power = 30 Watts Minimum Gain = 10 dB @ 900 MHz, class-AB Minimum Efficiency = 30% @ 900 MHz, 30 Watts (PEP) Maximum Intermodulation Distortion - 30 dBc @ 30 Watts (PEP) 30 W, 900 MHz RF POWER TRANSISTOR NPN SILICON * Characterized with Series Equivalent Large-Signal Parameters from 800 to 960 MHz * Silicon Nitride Passivated * 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 26 Vdc, and Rated Output Power * Gold Metalized, Emitter Ballasted for Long Life and Resistance to Metal- Migration * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. CASE 395B-01, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 30 Vdc Collector-Emitter Voltage VCES 60 Vdc Emitter-Base Voltage VEBO 4.0 Vdc Collector-Current -- Continuous IC 4.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 105 0.60 Watts W/C Storage Temperature Range Tstg - 65 to +150 C Symbol Max Unit RJC 1.67 C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) V(BR)CEO 30 33 -- Vdc Collector-Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) V(BR)CES 60 80 -- Vdc Emitter-Base Breakdown Voltage (IE = 5 mAdc, IC = 0) V(BR)EBO 4.0 4.7 -- Vdc ICES -- -- 10.0 mAdc hFE 30 80 120 -- Cob 14 21 28 Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCE = 30 Vdc, VBE = 0) ON CHARACTERISTICS DC Current Gain (ICE = 1.0 Adc, VCE = 5 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 24 Vdc, IE = 0, f = 1.0 MHz) pF (continued) REV 6 MRF897 5.2-286 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Common-Emitter Amplifier Power Gain (VCC = 24 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz, f2 = 900.1 MHz) Gpe 10.0 12.0 -- dB Collector Efficiency (VCC = 24 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz, f2 = 900.1 MHz) 35 38 -- % Intermodulation Distortion (VCC = 24 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz, f2 = 900.1 MHz) IMD -- -37 -30 dBc Output Mismatch Stress (VCC = 26 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz, f2 = 900.1 MHz, Load VSWR = 5:1 (all phase angles)) FUNCTIONAL CHARACTERISTICS Q1 C11 + R1 C13 No Degradation in Output Power Before and After Test C18 + VCC VBB L5 + R3 COAX 1 C21 R5 C6 L3 C4 B3 BALUN 2 B1 C16 TL3 TL9 L7 C8 L1 TL2 TL7 TL5 INPUT C2 TL1 C10 C15 TL11 C20 C24 TL6 C1 OUTPUT C23 C3 TL8 D.U.T. L2 L8 TL4 TL10 B2 BALUN 1 C9 B4 C17 C5 R4 L4 COAX 2 L6 R2 R6 C22 + VBB C7 VCC Q2 + C12 B1, B2, B3, B4 -- Ferrite Bead, Fair Rite #2743019447 C1 -- 0.8 - 8.0 pF Trimmer Capacitor, Johanson C2, C3, C23, C24 -- 43 pF, 100 mil, ATC Chip Capacitor C4, C5, C18, C19, C21, C22 -- 820 pF, 100 mil, Chip Capacitor, Kemet C6, C7, C11, C12 -- 10 F, Lytic Capacitor, Panasonic C8, C9, C16, C17 -- 100 pF, 100 mil, Chip Capacitor, Murata Erie C10 -- 13 pF, 50 mil, ATC Chip Capacitor C13, C14 -- 250 F Lytic Capacitor, Mallory C15 -- 1.1 pF, 50 mil, ATC Chip Capacitor C20 -- 6.8 pF, 100 mil, ATC Chip Capacitor L1, L2, L3, L4, L5, L6 -- 5 Turns 20 AWG, IDIA 0.126 choke + C14 C19 N1, N2 -- Type N Flange Mount, Omni Spectra 3052-1648-10 Q1 -- Bias Transistor BD136 PNP R1, R12 -- 39 Ohm, 2.0 W R3, R4, R5, R6 -- 4.0 x 39 Ohm, 1/8 W, Chips in Parallel, R3, R4, R5, R6 -- Rohm 390-J TL1 - TL11 -- See Photomaster Balun1, Balun2, Coax 1, Coax 2 -- 2.20 50 Ohm, 0.088 o.d. Balun1, Balun2, Coax 1, Coax 2 -- semi-rigid coax, Micro Coax Balun1, Balun2, Coax 1, Coax 2 -- UT-85-M17 Board -- 1/32 Glass Teflon, Arlon GX-0300-55-22, r = 2.55 Figure 1. MRF897 Broadband Test Circuit MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF897 5.2-287 45 45 40 40 PIN = 3 W Po, OUTPUT POWER (WATTS) 900 MHz 25 960 MHz 20 15 VCC = 24 Vdc Icq = 125 mA 10 5 0 0.0 0.5 1.5 W 25 20 1W 15 0.5 W 10 VCC = 24 Vdc Icq = 125 mA 5 2.5 1.0 1.5 2.0 PIN, INPUT POWER (WATTS) 2W 30 0 800 3.0 Figure 2. Output Power versus Input Power Po, OUTPUT POWER (WATTS) IMD, INTERMODULATION DISTORTION (dBc) PIN = 2.5 W 35 1.5 W 30 25 20 15 0.5 W 10 f = 900 MHz Icq = 125 mA 5 0 14 16 20 22 24 26 VCC, SUPPLY VOLTAGE (VOLTS) 18 28 940 960 30 3RD ORDER -30 -35 -40 5TH -45 7TH -50 -55 f1 = 900 MHz f2 = 900.1 MHz VCC = 24 Vdc Icq = 125 mA -60 -65 -70 0 5 15 10 20 25 Po, OUTPUT POWER (WATTS-PEP) 35 30 Figure 5. Intermodulation versus Output Power 12 Icq = 400 mA 13.0 12.5 11 300 mA 12.0 200 mA 11.0 10.5 10.0 f = 900 MHz VCC = 24 Vdc Icq = 125 mA 125 mA 9.5 9.0 0.01 0.1 1 10 Po, OUTPUT POWER, (WATTS) Figure 6. Power Gain versus Output Power MRF897 5.2-288 45 10 250 mA 11.5 50 GPE GPE , POWER GAIN (dB) 13.5 G PE, POWER GAIN (dB) 920 -25 Figure 4. Output Power versus Supply Voltage 14.0 860 880 900 f, FREQUENCY (MHz) 840 Figure 3. Output Power versus Frequency 45 40 820 40 9 35 8 7 6 840 30 POUT = 30 W (PEP) VCC = 24 Vdc Icq = 125 mA 850 INPUT VSWR 860 870 880 f, FREQUENCY (MHz) 25 890 20 900 , EFFICIENCY (%) 30 2.5 W 35 1.0 1.5 2.0 INPUT VSWR Po, OUTPUT POWER (WATTS) f = 800 MHz 35 Figure 7. Broadband Test Fixture Performance MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA f MHz Zin Ohms ZOL* Ohms 800 1.0 + j10.3 5.9 - j0.4 850 1.5 + j10.5 5.7 + j2.6 900 1.8 + j11.0 5.9 + j3.4 960 2.2 + j11.4 6.2 + j4.4 f = 800 MHz ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device operates at a given ZOL* = output power, voltage and frequency. 900 850 960 Zin 960 900 850 ZOL* Zo = 10 Ohms f = 800 MHz NOTE: Zin & ZOL* are given from base-to-base and collector-to-collector respectively. Po = 300 W (PEP), VCC = 24 V Figure 8. Series Equivalent Input/Output Impedances MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF897 5.2-289 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF897R Designed for 24 Volt UHF large-signal, common emitter, class-AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800 - 970 MHz. * Specified 24 Volt, 900 MHz Characteristics Output Power = 30 Watts Minimum Gain = 10.5 dB @ 900 MHz, class-AB Minimum Efficiency = 30% @ 900 MHz, 30 Watts (PEP) Maximum Intermodulation Distortion - 30 dBc @ 30 Watts (PEP) 30 W, 900 MHz RF POWER TRANSISTOR NPN SILICON * Characterized with Series Equivalent Large-Signal Parameters from 800 to 960 MHz * Silicon Nitride Passivated * 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 26 Vdc, and Rated Output Power * Gold Metalized, Emitter Ballasted for Long Life and Resistance to Metal- Migration CASE 395E-01, STYLE 1 MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol Value Unit VCEO 30 Vdc Collector-Emitter Voltage VCES 60 Vdc Emitter-Base Voltage VEBO 4.0 Vdc Collector-Current -- Continuous IC 4.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 105 0.60 Watts W/C Storage Temperature Range Tstg - 65 to +150 C Symbol Max Unit RJC 1.67 C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)CEO 30 33 -- Vdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) V(BR)CES 60 80 -- Vdc Emitter-Base Breakdown Voltage (IE = 5 mAdc, IC = 0) V(BR)EBO 4.0 4.7 -- Vdc ICES -- -- 10.0 mAdc hFE 30 80 120 -- Cob 14 21 28 pF Collector Cutoff Current (VCE = 30 Vdc, VBE = 0, TC = 25C) ON CHARACTERISTICS DC Current Gain (ICE = 1.0 Adc, VCE = 5 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 24 Vdc, IE = 0, f = 1.0 MHz) (continued) REV 2 MRF897R 5.2-290 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Common-Emitter Amplifier Power Gain (VCC = 24 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz, f2 = 900.1 MHz) Gpe 10.5 12.0 -- dB Collector Efficiency (VCC = 24 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz, f2 = 900.1 MHz) 30 38 -- % Intermodulation Distortion (VCC = 24 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz, f2 = 900.1 MHz) IMD -- -37 -30 dBc FUNCTIONAL CHARACTERISTICS Output Mismatch Stress (VCC = 26 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz, f2 = 900.1 MHz, Load VSWR = 5:1 (all phase angles)) VBB R1 No Degradation in Output Power R5 R3 C6 Q1 + C21 L3 C18 C11 L5 + C13 VCC B3 VB B1 C25 C4 C16 L7 C8 L1 COAX 1 BALUN 2 TL9 DUT TL3 TL2 TL7 TL5 INPUT + C2 TL1 C23 C10 C15 TL6 C1 C20 TL11 TL8 C3 TL4 TL10 L2 BALUN 1 OUTPUT C24 COAX 2 L8 C9 B2 C17 L4 VB B4 C26 VBB R2 C7 + R4 B1, B2, B3, B4 -- Short Ferrite Bead, Fair Rite #2743019447 C1 -- 0.8 - 8.0 pF Var Capacitor, Johansen Gigatrim C2, C3, C23, C24 -- 43 pF, 100 mil, ATC Chip Capacitor C4, C5, C21, C22 -- 1000 pF, 100 mil, ATC Chip Capacitor C6, C7, C11, C12 -- 10 F, Electrolytic Capacitor, Panasonic C8, C9, C16, C17 -- 100 pF, 100 mil, ATC Chip Capacitor C10 -- 9.1 pF, 50 mil, ATC Chip Capacitor C13 -- 250 F Electrolytic Capacitor, Mallory C14, C18, C19, C25 -- 0.1 F, Chip Capacitor, Kemet C15 -- 1.1 pF, 50 mil, ATC Chip Capacitor C20 -- 6.8 pF, 100 mil, ATC Chip Capacitor L1, L2, L3, L4, L5, L6, L7, L8 -- 5 Turns 20 AWG, IDIA 0.126 Choke, Taylor Spring 46 nH L6 C5 C22 C19 R6 + C12 + VCC C14 N1, N2 -- Type N Flange Mount, Omni Spectra 3052-1648-10 Q1 -- Bias Transistor BD136 PNP R1, R12 -- 27 Ohm, 2.0 W R3, R4, R5, R6 -- 4.0 x 39 Ohm, 1/8 W, Chips Resistors in R3, R4, R5, R6 -- Parallel, Rohm 390-J SB1 -- 0.15 x 0.3 x 0.03 Cu TL1 - TL11 -- Microstrip Line, See Photomaster Balun1, Balun2, Coax 1, Coax 2 -- 2.20 50 Ohm, 0.086 o.d. Balun1, Balun2, Coax 1, Coax 2 -- semi-rigid coax, Micro Coax Balun1, Balun2, Coax 1, Coax 2 -- UT-85-M17 Circuit Board -- 1/32 Glass Teflon, Arlon GX-0300-55-22, Circuit Board -- r = 2.55 Figure 1. 840 - 900 MHz Test Circuit Schematic MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF897R 5.2-291 45 40 40 Pout , OUTPUT POWER (WATTS) f = 800 MHz 30 900 MHz 25 960 MHz 20 15 VCC = 24 Vdc ICQ = 125 mA 10 5 0 0.0 0.5 1.0 1.5 2.0 Pin, INPUT POWER (WATTS) 2.5 W 35 2W 30 1.5 W 25 20 1W 15 0.5 W 10 VCC = 24 Vdc ICQ = 125 mA 5 2.5 0 800 3.0 Figure 2. Output Power versus Input Power Pout , OUTPUT POWER (WATTS) IMD, INTERMODULATION DISTORTION (dBc) Pin = 2.5 W 35 1.5 W 30 25 20 15 0.5 W 10 f = 900 MHz ICQ = 125 mA 5 0 14 16 18 20 22 24 26 VCC, SUPPLY VOLTAGE (VOLTS) 840 860 880 900 f, FREQUENCY (MHz) 28 30 14.0 -35 -40 5TH -45 7TH -50 -55 f1 = 900 MHz f2 = 900.1 MHz VCC = 24 Vdc ICQ = 125 mA -60 -65 -70 5 0 10 15 20 25 Pout, OUTPUT POWER (WATTS-PEP) 35 Figure 5. Intermodulation versus Output Power 50 GPE 300 mA 10 250 mA 200 mA 10.5 10.0 125 mA 9.5 9.0 0.01 f = 900 MHz VCC = 24 Vdc ICQ = 125 mA 0.1 1 Pout, OUTPUT POWER, (WATTS) 40 35 9 Pout = 30 W (PEP) VCC = 24 Vdc ICQ = 125 mA 8 30 INPUT VSWR 25 7 6 840 10 850 860 870 880 890 20 900 f, FREQUENCY (MHz) Figure 6. Power Gain versus Output Power MRF897R 5.2-292 45 11 ICQ = 400 mA GPE , POWER GAIN (dB) G PE, POWER GAIN (dB) 11.0 30 12 12.0 11.5 960 3RD ORDER -30 13.5 12.5 940 -25 Figure 4. Output Power versus Supply Voltage 13.0 920 Figure 3. Output Power versus Frequency 45 40 820 , EFFICIENCY (%) 35 Pin = 3 W 1.0 1.5 2.0 INPUT VSWR Pout , OUTPUT POWER (WATTS) 45 Figure 7. Broadband Test Fixture Performance MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA f MHz Pout = 30 W (PEP), VCC = 24 V Zin ZOL* Ohms Ohms 800 1.7 + j9.2 5.9 - j0.4 850 2.6 + j10 5.7 + j2.6 900 4 + j9.9 5.9 + j3.4 950 5 + j8.8 6.2 + j4.4 ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device operates at a given ZOL* = output power, voltage and frequency. f = 800 MHz 850 Zin 900 960 960 900 850 ZOL* Zo = 10 Ohms f = 800 MHz NOTE: Zin & ZOL* are given from base-to-base and collector-to-collector respectively. Figure 8. Series Equivalent Input/Output Impedances MRF897R (SCALE: 1:1) Figure 9. MRF897R Photomaster (Reduced 18% in printed data book, DL110/D) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF897R 5.2-293 R1 C6 SB1 CC CC EE L5 R3 L3 C25 C4 COAX1 C18 Q1 C C C C C3 BALUN1 L1 C14 R2 C7 C15 L2 C9 C23 C24 L8 C17 COAX2 B4 CC CC R4 L7 C20 C10 B2 C5 BALUN2 C16 C8 C1 R5 B3 CC CC CC CC C13 C21 B1 C2 C11 L4 C22 C19 MRF897R EE EE R6 L6 C12 Figure 10. 840 - 900 MHz Test Circuit Component Layout MRF897R 5.2-294 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF898 . . . designed for 24 Volt UHF large-signal, common base amplifier applications in industrial and commercial FM equipment operating in the range of 850 - 960 MHz. * Motorola Advanced Amplifier Concept Package 60 W, 850 - 960 MHz RF POWER TRANSISTOR NPN SILICON * Specified 24 Volt, 900 MHz Characteristics Output Power = 60 Watts Power Gain = 7.0 dB Min Efficiency = 60% Min * Double Input/Output Matched for Wideband Performance and Simplified External Matching * Series Equivalent Large-Signal Characterization * Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration * Silicon Nitride Passivated * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. CASE 333A-02, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 30 Vdc Collector-Base Voltage VCBO 55 Vdc Emitter-Base Voltage VEBO 4.0 Vdc Collector Current -- Continuous IC 10 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 175 1.0 Watts W/C Storage Temperature Range Tstg - 65 to +150 C Symbol Max Unit RJC 1.0 C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) V(BR)CEO 30 -- -- Vdc Collector-Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) V(BR)CES 55 -- -- Vdc Emitter-Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) V(BR)EBO 4.0 -- -- Vdc ICES -- -- 10 mAdc OFF CHARACTERISTICS Collector Cutoff Current (VCE = 30 Vdc, VBE = 0, TC = 25C) (continued) REV 6 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF898 5.2-295 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit hFE 20 50 150 -- Cob -- 60 -- pF Common-Base Amplifier Power Gain (VCC = 24 Vdc, Pout = 60 W, f = 900 MHz) Gpb 7.0 7.9 -- dB Collector Efficiency (VCC = 24 Vdc, Pout = 60 W, f = 900 MHz) 60 65 -- % Output Mismatch Stress (VCC = 24 Vdc, Pout = 60 W, f = 900 MHz, VSWR = 5:1, all phase angles) ON CHARACTERISTICS DC Current Gain (IC = 2.0 Adc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (1) (VCB = 24 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS No Degradation in Output Power NOTE: 1. Value of "Cob" is that of die only. It is not measurable in MRF898 because of internal matching network. L2 L3 B3 VRE SHORTING PLUG B1 + VCC C9 B2 C10 C11 + C4 + C5 C6 C7 C8 C3 GND GND L1 L4 DUT 50 OHMS C2 C1 TL1 TL2 TL3 TL4 TL5 TL6 50 OHMS TL7 C12 B1, B2, B3 -- Bead, Ferroxcube 56-390-65/3B C1, C2, C12 -- 39 pF, 100 Mil Chip Capacitor C3, C11 -- 91 pF, Mini Underwood or Equivalent C4, C7, C9 -- 10 F, 35 V Electrolytic C5 -- 4000 pF, 1.0 kV Ceramic C6, C10 -- 1000 pF, 350 V Unelco or Equivalent C8 -- 47 pF, 100 Mil Chip Capacitor L1, L4 -- 4 Turns #18 AWG Choke L2 -- 11 Turns #20 AWG Choke on 10 Ohm, 1.0 Watt Resistor L3 -- 3 Turns #18 AWG Choke on 10 Ohm, 1.0 Watt Resistor TL1, TL6 -- 50 Ohm Microstrip TL2 -- 400 x 950 Mils TL3, TL4 -- 140 x 200 Mils TL5 -- 320 x 690 Mils TL7 -- 260 x 230 Mils Board -- 3M Epsilam-10, 50 Mil Bias Boards -- 1/32 G10 or Equivalent Figure 1. 850 - 960 MHz Broadband Test Circuit MRF898 5.2-296 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 100 100 80 900 MHz 960 MHz 60 40 VCC = 24 V 20 Pin = 14 W Pin = 16 W Po, OUTPUT POWER (WATTS) Po, OUTPUT POWER (WATTS) 850 MHz 80 12 W 60 10 W 8W 40 20 VCC = 24 V 8 10 12 14 16 Pin, INPUT POWER (WATTS) 0 18 850 Figure 2. Output Power versus Input Power 10 100 90 12 W GPA 8 G PA , POWER GAIN (dB) Po, OUTPUT POWER (WATTS) Pin = 14 W 60 10 W 40 8W 70 6 40 VSWR 0 28 60 50 Pin = 12 W VCC = 24 V 4 f = 900 MHz 22 24 26 VCC, SUPPLY VOLTAGE (VOLTS) 80 c 2 20 0 20 950 Figure 3. Output Power versus Frequency 100 80 900 f, FREQUENCY (MHz) Figure 4. Output Power versus Supply Voltage 850 900 f, FREQUENCY (MHz) 1.3 30 1.2 20 1.1:1 10 c , COLLECTOR EFFICIENCY (%) 6 INPUT VSWR 0 0 960 Figure 5. Typical Broadband Circuit Performance Po = 60 W, VCC = 24 V F MHz Zin Ohms ZOL* Ohms 850 11.2 + j2.3 4.0 + j3.9 900 8.2 - j1.0 4.4 + j1.8 960 4.7 - j2.0 5.3 + j3.7 ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device operates at a given ZOL* = output power, voltage and frequency. f = 850 MHz 960 ZOL* 900 f = 850 MHz Zin 900 960 Figure 6. Input/Output Impedance versus Frequency MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF898 5.2-297 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF899 Designed for 26 Volt UHF large-signal, common emitter, Class AB linear amplifier applications in industrial and commercial FM / AM equipment operating in the range 800 - 960 MHz. * Specified 26 Volt, 900 MHz Characteristics Output Power = 150 Watts (PEP) Minimum Gain = 8.0 dB @ 900 MHz, Class AB Minimum Efficiency = 35% @ 900 MHz, 150 Watts (PEP) Maximum Intermodulation Distortion - 28 dBc @ 150 Watts (PEP) 150 W, 900 MHz RF POWER TRANSISTOR NPN SILICON * Characterized with Series Equivalent Large-Signal Parameters from 800 to 960 MHz * Silicon Nitride Passivated * 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 26 Vdc, and Rated Output Power * Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. CASE 375A-01, STYLE 1 MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol Value Unit VCEO 28 Vdc Collector-Emitter Voltage VCES 60 Vdc Emitter-Base Voltage VEBO 4.0 Vdc Collector-Current -- Continuous IC 25 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 230 1.33 Watts W/C Storage Temperature Range Tstg - 65 to + 150 C Symbol Max Unit RJC 0.75 C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit V(BR)CEO 28 37 -- Vdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 100 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) V(BR)CES 60 85 -- Vdc Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 4.0 4.9 -- Vdc ICES -- -- 10 mAdc hFE 30 75 120 -- Cob -- 75 -- Collector Cutoff Current (VCE = 30 Vdc, VBE = 0) ON CHARACTERISTICS DC Current Gain (ICE = 1.0 Adc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 26 Vdc, IE = 0, f = 1.0 MHz) (1) (1) For information only. This part is collector matched. pF (continued) REV 7 MRF899 5.2-298 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Common-Emitter Amplifier Power Gain VCC = 26 Vdc, Pout = 150 Watts (PEP), Icq = 300 mA, f1 = 900 MHz, f2 = 900.1 MHz Gpe 8.0 9.0 -- dB Collector Efficiency VCC = 26 Vdc, Pout = 150 Watts (PEP), Icq = 300 mA, f1 = 900 MHz, f2 = 900.1 MHz 30 40 -- % 3rd Order Intermodulation Distortion VCC = 26 Vdc, Pout = 150 Watts (PEP), Icq = 300 mA, f1 = 900 MHz, f2 = 900.1 MHz IMD -- - 32 -28 dBc Output Mismatch Stress VCC = 26 Vdc, Pout = 150 Watts (PEP), Icq = 300 mA, f1 = 900 MHz, f2 = 900.1 MHz, VSWR = 5:1 (all phase angles) FUNCTIONAL CHARACTERISTICS No Degradation in Output Power Before and After Test VB VCC R1b VBB C5 COAX 1 R2 C3 TL1 C7 C10 C12 L4 R3 C14 C17 L6 C22 C20 BALUN 2 TL7 B1 TL5 L7 L2 C24 C1 TL3 OUTPUT INPUT C9 C2 C16 C19 TL4 D.U.T. L3 C25 TL6 L9 TL2 L1 B2 TL8 + BALUN 1 R4 L5 R3 C4 R1a C6 VBB + C21 + C13 C15 C23 COAX 2 C18 Q1 + C26 C8 C27 + C11 L8 VB VCC B1, B2 -- Ferrite Bead, Ferroxcube #56-590-65-3B C1, C2, C24, C25 -- 43 pF, B Case, ATC Chip Capacitor C3, C4, C20, C21 -- 100 pF, B Case, ATC Chip Capacitor C5, C6, C12, C13 -- 1000 pF, B Case, ATC Chip Capacitor C7, C8, C14, C15 -- 1800 pF, AVX Chip Capacitor C9 -- 9.1 pF, A Case, ATC Chip Capacitor C10, C11, C17, C18, C22, C23 -- 10 F, Electrolytic Capacitor Panasonic C16 -- 3.9 pF, B Case, ATC Chip Capacitor C19 -- 0.8 pF, B Case, ATC Chip Capacitor C26 -- 200 F, Electrolytic Capacitor Mallory Sprague C27 -- 500 F Electrolytic Capacitor L1 -- 5 Turns 24 AWG IDIA 0.059 Choke, 19.8 nH L2, L3, L7, L9 -- 4 Turns 20 AWG IDIA 0.163 Choke L4, L5, L6, L8 -- 12 Turns 22 AWG IDIA 0.140 Choke N1, N2 -- Type N Flange Mount, Omni Spectra Q1 -- Bias Transistor BD136 PNP R2, R3, R4, R5 -- 4.0 x 39 Ohm 1/8 W Chips in Parallel R1a, R1b -- 56 Ohm 1.0 W TL1 - TL8 -- See Photomaster Balun1, Balun2, Coax 1, Coax 2 -- 2.20 50 Ohm 0.088 o.d. Balun1, Balun2, Coax 1, Coax 2 -- Semi-rigid Coax, Micro Coax Board -- 1/32 Glass Teflon, r = 2.55 Arlon (GX-0300-55-22) Figure 1. 900 MHz Power Gain Test Circuit MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF899 5.2-299 200 f = 800 MHz 900 MHz 960 MHz 100 75 50 VCC = 26 Vdc Icq = 300 mA 25 0 0 5 10 15 20 Pin, INPUT POWER (WATTS) 25 24 W 150 18 W 125 12 W 100 75 6W 50 VCC = 26 Vdc Icq = 300 mA 25 0 30 800 200 Pin = 24 W Pout , OUTPUT POWER (WATTS) 175 150 16 W 125 100 8W 75 50 f = 900 MHz Icq = 300 mA 25 0 14 16 18 20 22 24 26 VCC, COLLECTOR VOLTAGE (VOLTS) 28 G pe, POWER GAIN (dB) G pe, POWER GAIN (dB) 9 600 mA 9 300 mA 7 f = 900 MHz VCC = 26 V Icq = 300 mA 6 5 0.1 1 10 Pout, OUTPUT POWER (WATTS) 100 Figure 6. Power Gain versus Output Power MRF899 5.2-300 940 960 3rd Order - 30 5th - 40 7th - 50 f1 = 900 MHz f2 = 900.1 MHz VCC = 26 Vdc Icq = 300 mA - 60 0 25 50 75 100 125 Pout, OUTPUT POWER, WATTS (PEP) 150 175 Figure 5. Intermodulation versus Output Power 900 mA 8 920 50 10 Icq = 1200 mA 10 860 880 900 f, FREQUENCY (MHz) - 20 - 70 30 Figure 4. Output Power versus Supply Voltage 11 840 Figure 3. Output Power versus Frequency IMD, INTERMODULATION DISTORTION (dBc) Figure 2. Output Power versus Input Power 820 8 45 GPE C 40 7 35 6 30 PO = 150 W (PEP) VCC 26 V I/P VSWR lcq = 300 mA 5 840 850 860 870 880 890 f, FREQUENCY (MHz) 25 900 c , EFFICIENCY (%) 125 Pin = 30 W 175 1.50 2.00 INPUT VSWR 150 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 175 1.00 200 Figure 7. Broadband Test Fixture Performance MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA f = 800 MHz 850 900 Zin 900 f = 960 MHz 850 960 ZOL* 800 Zo = 10 f MHz Zin Ohms ZOL* Ohms 800 5.51 + j10.6 4.52 + j2.64 850 8.17 + j13.2 4.21 + j2.98 900 11.2 + j13.8 3.68 + j2.97 960 16.8 + j10.1 2.98 + j2.71 NOTE: Zin & ZOL* are given from NOTE: base-to-base and NOTE: collector-to-collector NOTE: respectively ZOL* = Conjugate of optimum load impedance into ZOL* = which the device operates at a given output ZOL* = power, voltage and frequency. Figure 8. Input and Output Impedances with Circuit Tuned for Maximum Gain @ PO = 150 W (PEP), VCC = 26 V MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF899 5.2-301 C27 C26 C12 C14 C17 C10 C5 L6 C7 L4 C20 Q1 C3 COAX 1 C22 B2 L7 L2 C16 C1 C9 C2 L1 R4 BALUN 2 R2 L3 B1 C19 C24 C25 L9 C4 C23 C21 R3 BALUN 1 L5 COAX 2 R5 L8 C11 C6 C8 C18 C13 C15 Figure 9. MRF899 Test Fixture Component Layout MRF899 5.2-302 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET The MRF1511T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 volt portable FM equipment. * Specified Performance @ 175 MHz, 7.5 Volts Output Power -- 8 Watts Power Gain -- 11.5 dB Efficiency -- 55% D * Capable of Handling 20:1 VSWR, @ 9.5 Vdc, 175 MHz, 2 dB Overdrive * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request G * RF Power Plastic Surface Mount Package * Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel. MRF1511T1 175 MHz, 8 W, 7.5 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET CASE 466-02, STYLE 1 (PLD-1.5) PLASTIC S MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 40 Vdc Gate-Source Voltage VGS 20 Vdc Drain Current -- Continuous ID 4 Adc Total Device Dissipation @ TC = 25C (1) Derate above 25C PD 62.5 0.5 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 150 C Symbol Max Unit RJC 2 C/W Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Calculated based on the formula PD = TJ - TC RJC NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF1511T1 5.2-303 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Current (VDS = 35 Vdc, VGS = 0) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 10 Vdc, VDS = 0) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 7.5 Vdc, ID = 170 A) VGS(th) 1.0 1.6 2.1 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) -- 0.4 -- Vdc Input Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Ciss -- 100 -- pF Output Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Coss -- 53 -- pF Reverse Transfer Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Crss -- 8 -- pF Common-Source Amplifier Power Gain (VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 175 MHz) Gps 10 11.5 -- dB Drain Efficiency (VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 175 MHz) 50 55 -- % OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture) MRF1511T1 5.2-304 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA VGG + C8 C6 C7 R4 B1 B2 C18 C17 + C15 C16 VDD R3 L4 C5 R2 Z6 Z7 Z8 L3 Z9 N2 Z10 R1 N1 Z1 Z2 L2 Z3 Z4 Z5 DUT C14 C9 C1 RF INPUT L1 C2 C10 C11 C12 RF OUTPUT C13 C3 C4 B1, B2 C1, C5, C18 C2, C10, C12 C3 C4 C6, C15 C7, C16 C8, C17 C9 C11 C13 C14 L1, L3 L2 L4 N1, N2 15 , 0805 Chip Resistor 1.0 k, 1/8 W Resistor 1.0 k, 0805 Chip Resistor 33 k, 1/8 W Resistor 0.200 x 0.080 Microstrip 0.755 x 0.080 Microstrip 0.300 x 0.080 Microstrip 0.065 x 0.080 Microstrip 0.260 x 0.223 Microstrip 0.095 x 0.080 Microstrip 0.418 x 0.080 Microstrip 1.057 x 0.080 Microstrip 0.120 x 0.080 Microstrip Glass Teflon, 31 mils, 2 oz. Copper R1 R2 R3 R4 Z1 Z2 Z3 Z4 Z5, Z6 Z7 Z8 Z9 Z10 Board Short Ferrite Bead, Fair Rite Products (2743021446) 120 pF, 100 mil Chip Capacitor 0 to 20 pF, Trimmer Capacitor 33 pF, 100 mil Chip Capacitor 68 pF, 100 mil Chip Capacitor 10 F, 50 V Electrolytic Capacitor 1,200 pF, 100 mil Chip Capacitor 0.1 F, 100 mil Chip Capacitor 150 pF, 100 mil Chip Capacitor 43 pF, 100 mil Chip Capacitor 24 pF, 100 mil Chip Capacitor 300 pF, 100 mil Chip Capacitor 12.5 nH, A04T, Coilcraft 26 nH, 4 Turn, Coilcraft 55.5 nH, 5 Turn, Coilcraft Type N Flange Mount Figure 1. 135 - 175 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 135 - 175 MHz -5 VDD = 7.5 V IRL, INPUT RETURN LOSS (dB) Pout , OUTPUT POWER (WATTS) 10 8 155 MHz 135 MHz 6 175 MHz 4 2 -10 135 MHz 175 MHz -15 155 MHz -20 VDD = 7.5 V 0 -25 0 0.1 0.2 0.3 0.4 0.5 Pin, INPUT POWER (WATTS) 0.6 0.7 Figure 2. Output Power versus Input Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 1 2 3 6 7 4 5 Pout, OUTPUT POWER (WATTS) 8 9 10 Figure 3. Input Return Loss versus Output Power MRF1511T1 5.2-305 TYPICAL CHARACTERISTICS, 135 - 175 MHz 16 70 155 MHz 155 MHz 60 Eff, DRAIN EFFICIENCY (%) 14 GAIN (dB) 135 MHz 175 MHz 12 10 8 50 175 MHz 40 30 20 VDD = 7.5 V 10 VDD = 7.5 V 0 6 2 1 3 6 7 8 4 5 Pout, OUTPUT POWER (WATTS) 9 10 0 Figure 4. Gain versus Output Power 2 3 4 5 6 7 Pout, OUTPUT POWER (WATTS) 8 9 10 80 Eff, DRAIN EFFICIENCY (%) 11 10 9 155 MHz 8 135 MHz 175 MHz 7 6 70 155 MHz 60 135 MHz 175 MHz 50 VDD = 7.5 V Pin = 27 dBm VDD = 7.5 V Pin = 27 dBm 5 4 40 0 200 400 600 IDQ, BIASING CURRENT (mA) 800 200 0 1000 Figure 6. Output Power versus Biasing Current 600 400 IDQ, BIASING CURRENT (mA) 800 1000 Figure 7. Drain Efficiency versus Biasing Current 80 14 12 175 MHz 10 Eff, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 1 Figure 5. Drain Efficiency versus Output Power 12 Pout , OUTPUT POWER (WATTS) 135 MHz 135 MHz 155 MHz 8 6 155 MHz 60 135 MHz 175 MHz 50 40 IDQ = 150 mA Pin = 27 dBm 4 70 IDQ = 150 mA Pin = 27 dBm 30 2 4 6 8 10 12 14 16 Figure 8. Output Power versus Supply Voltage MRF1511T1 5.2-306 4 6 8 10 12 14 16 VDD, SUPPLY VOLTAGE (VOLTS) VDD, SUPPLY VOLTAGE (VOLTS) Figure 9. Drain Efficiency versus Supply Voltage MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA VGG + C8 C6 C7 B1 R4 B2 C16 C15 C14 + C13 VDD R3 L4 C5 R2 Z6 Z7 L3 Z8 Z9 N2 Z10 R1 N1 RF INPUT Z1 C1 L1 Z2 Z3 Z4 Z5 DUT C12 C9 C2 C10 RF OUTPUT C11 C3 C4 B1, B2 N1, N2 R1 R2 R3 R4 Z1 Z2 Z3 Z4 Z5, Z6 Z7 Z8 Z9 Z10 Board Short Ferrite Bead, Fair Rite Products (2743021446) 330 pF, 100 mil Chip Capacitor 43 pF, 100 mil Chip Capacitor 0 to 20 pF, Trimmer Capacitor 24 pF, 100 mil Chip Capacitor 120 pF, 100 mil Chip Capacitor 10 F, 50 V Electrolytic Capacitor 1,200 pF, 100 mil Chip Capacitor 0.1 F, 100 mil Chip Capacitor 380 pF, 100 mil Chip Capacitor 75 pF, 100 mil Chip Capacitor 82 nH, Coilcraft 55.5 nH, 5 Turn, Coilcraft 39 nH, 6 Turn, Coilcraft C1, C12 C2 C3, C10 C4 C5, C16 C6, C13 C7, C14 C8, C15 C9 C11 L1 L2 L3 Type N Flange Mount 15 , 0805 Chip Resistor 51 , 1/2 W Resistor 100 , 0805 Chip Resistor 33 k, 1/8 W Resistor 0.136 x 0.080 Microstrip 0.242 x 0.080 Microstrip 1.032 x 0.080 Microstrip 0.145 x 0.080 Microstrip 0.260 x 0.223 Microstrip 0.134 x 0.080 Microstrip 0.490 x 0.080 Microstrip 0.872 x 0.080 Microstrip 0.206 x 0.080 Microstrip Glass Teflon, 31 mils, 2 oz. Copper Figure 10. 66 - 88 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 66 - 88 MHz 10 0 8 88 MHz VDD = 7.5 V -2 IRL, INPUT RETURN LOSS (dB) Pout , OUTPUT POWER (WATTS) 77 MHz 66 MHz 6 4 2 VDD = 7.5 V -4 -6 -8 88 MHz -10 -12 -14 66 MHz -16 77 MHz -18 -20 0 0 0.1 0.2 0.3 0.4 0.5 Pin, INPUT POWER (WATTS) 0.6 0.7 Figure 11. Output Power versus Input Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 1 2 3 4 5 6 7 Pout, OUTPUT POWER (WATTS) 8 9 10 Figure 12. Input Return Loss versus Output Power MRF1511T1 5.2-307 TYPICAL CHARACTERISTICS, 66 - 88 MHz 18 70 Eff, DRAIN EFFICIENCY (%) GAIN (dB) 77 MHz 88 MHz 14 88 MHz 60 66 MHz 16 12 10 50 40 30 20 VDD = 7.5 V 10 VDD = 7.5 V 0 8 1 2 3 4 6 7 8 5 Pout, OUTPUT POWER (WATTS) 9 1 10 Figure 13. Gain versus Output Power 3 4 6 7 5 Pout, OUTPUT POWER (WATTS) 8 9 10 80 11 10 Eff, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 2 Figure 14. Drain Efficiency versus Output Power 12 77 MHz 9 88 MHz 8 66 MHz 7 6 70 60 88 MHz 77 MHz 50 66 MHz VDD = 7.5 V Pin = 25.7 dBm VDD = 7.5 V Pin = 25.7 dBm 5 4 40 0 200 400 600 IDQ, BIASING CURRENT (mA) 800 0 1000 Figure 15. Output Power versus Biasing Current 200 600 400 IDQ, BIASING CURRENT (mA) 800 1000 Figure 16. Drain Efficiency versus Biasing Current 80 14 12 Eff, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 66 MHz 77 MHz 10 77 MHz 8 66 MHz 88 MHz 6 60 88 MHz 50 77 MHz 66 MHz 40 IDQ = 150 mA Pin = 25.7 dBm 4 70 IDQ = 150 mA Pin = 25.7 dBm 30 2 5 6 7 8 9 VDD, SUPPLY VOLTAGE (VOLTS) Figure 17. Output Power versus Supply Voltage MRF1511T1 5.2-308 10 5 6 7 8 9 10 VDD, SUPPLY VOLTAGE (VOLTS) Figure 18. Drain Efficiency versus Supply Voltage MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA f = 175 MHz Zin Zo = 10 155 77 f = 88 MHz ZOL* 66 135 Zin f = 88 MHz 77 66 155 ZOL* f = 175 MHz 135 VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W Zin VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W f MHz Zin ZOL* f MHz Zin ZOL* 135 20.1 -j0.5 2.53 -j2.61 66 25.3 -j0.31 3.62 -j0.751 155 17.0 +j3.6 3.01 -j2.48 77 25.6 +j3.62 3.59 -j0.129 175 15.2 +j7.9 2.52 -j3.02 88 26.7 +j6.79 3.37 -j0.173 = Complex conjugate of source impedance with parallel 15 resistor and 68 pF capacitor in series with gate. (See Figure 1). Zin ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. = Complex conjugate of source impedance with parallel 15 resistor and 24 pF capacitor in series with gate. (See Figure 10). ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability. Input Matching Network Output Matching Network Device Under Test Z in Z * OL Figure 19. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF1511T1 5.2-309 Table 1. Common Source Scattering Parameters (VDD = 7.5 Vdc) IDQ = 150 mA S11 f MHz |S11| 30 0.88 50 S21 S12 S22 |S21| |S12| -165 18.92 95 0.015 8 0.84 -169 0.88 -171 11.47 91 0.016 -5 0.84 -173 100 0.87 -175 5.66 85 0.016 -7 0.84 -176 150 0.87 -176 3.75 82 0.015 -5 0.85 -176 200 0.87 -177 2.78 78 0.014 -6 0.84 -176 250 0.87 -177 2.16 75 0.014 -10 0.85 -176 300 0.88 -177 1.77 72 0.012 -17 0.86 -176 350 0.88 -177 1.49 69 0.013 -11 0.86 -176 400 0.88 -177 1.26 66 0.013 -17 0.87 -175 450 0.88 -177 1.08 64 0.011 -20 0.87 -175 500 0.89 -176 0.96 63 0.012 -20 0.88 -175 |S22| IDQ = 800 mA S11 f MHz |S11| 30 0.89 50 S21 S12 S22 |S21| |S12| |S22| -166 18.89 95 0.014 10 0.85 -170 0.88 -172 11.44 91 0.015 8 0.84 -174 100 0.87 -175 5.65 86 0.016 -2 0.85 -176 150 0.87 -177 3.74 82 0.014 -8 0.84 -177 200 0.87 -177 2.78 78 0.013 -18 0.85 -177 250 0.88 -177 2.16 75 0.012 -11 0.85 -176 300 0.88 -177 1.77 73 0.015 -15 0.86 -176 350 0.88 -177 1.50 70 0.009 -7 0.87 -176 400 0.88 -177 1.26 67 0.012 -3 0.87 -176 450 0.88 -177 1.09 65 0.012 -18 0.87 -175 500 0.89 -177 0.97 64 0.009 -10 0.88 -175 IDQ = 1.5 A S11 S21 S12 S22 f MHz |S11| |S21| |S12| 30 0.90 -168 17.89 95 0.013 2 0.86 -172 50 0.89 -173 10.76 91 0.013 3 0.86 -175 100 0.88 -176 5.32 86 0.014 -19 0.86 -177 150 0.88 -177 3.53 83 0.013 -6 0.86 -177 200 0.88 -177 2.63 80 0.011 -4 0.86 -177 250 0.88 -178 2.05 77 0.012 -14 0.86 -177 300 0.88 -177 1.69 75 0.013 -2 0.87 -177 350 0.89 -177 1.43 72 0.010 -9 0.87 -176 400 0.89 -177 1.22 70 0.014 -3 0.88 -176 450 0.89 -177 1.06 68 0.011 -8 0.88 -176 500 0.89 -177 0.94 67 0.011 -15 0.88 -176 MRF1511T1 5.2-310 |S22| MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA APPLICATIONS INFORMATION DESIGN CONSIDERATIONS This device is a common-source, RF power, N-Channel enhancement mode, Lateral Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). Motorola Application Note AN211A, "FETs in Theory and Practice", is suggested reading for those not familiar with the construction and characteristics of FETs. This surface mount packaged device was designed primarily for VHF and UHF portable power amplifier applications. Manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. However, care should be taken in the design process to insure proper heat sinking of the device. The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to-source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications. Drain Cgd Gate Cds Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd Cgs Source DRAIN CHARACTERISTICS One critical figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, RDS(on), occurs in the linear region of the output characteristic and is specified at a specific gate-source voltage and drain current. The drain-source voltage under these conditions is termed VDS(on). For MOSFETs, VDS(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not recommended and may result in possible damage to the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The DC input resistance is very high - on the order of 109 -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate-to-source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate-drain capacitance. If the gate-to-source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate-threshold voltage and turn the device on. DC BIAS Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. RF power FETs operate optimally with a quiescent drain current (IDQ), whose value is application dependent. This device was characterized at IDQ = 150 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF1511T1 5.2-311 MOUNTING The specified maximum thermal resistance of 2C/W assumes a majority of the 0.065 x 0.180 source contact on the back side of the package is in good contact with an appropriate heat sink. As with all RF power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. Refer to Motorola Application Note AN4005/D, "Thermal Management and Mounting Method for the PLD-1.5 RF Power Surface Mount Package," and Engineering Bulletin EB209/D, "Mounting Method for RF Power Leadless Surface Mount Transistor" for additional information. AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Motorola Application Note AN721, "Impedance Matching Networks Applied to RF Power Transistors." Large-signal MRF1511T1 5.2-312 impedances are provided, and will yield a good first pass approximation. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of this device yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region. Two-port stability analysis with this device's S-parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Motorola Application Note AN215A, "RF Small-Signal Design Using Two-Port Parameters" for a discussion of two port network theory and stability. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET The MRF1513T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 volt portable and 12.5 volt mobile FM equipment. * Specified Performance @ 520 MHz, 12.5 Volts Output Power -- 3 Watts Power Gain -- 11 dB Efficiency -- 55% D * Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 520 MHz, 2 dB Overdrive * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request G * RF Power Plastic Surface Mount Package * Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel. MRF1513T1 520 MHz, 3 W, 12.5 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET CASE 466-02, STYLE 1 (PLD-1.5) PLASTIC S MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 40 Vdc Gate-Source Voltage VGS 20 Vdc Drain Current -- Continuous ID 2 Adc Total Device Dissipation @ TC = 25C (1) Derate above 25C PD 31.25 0.25 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 150 C Symbol Max Unit RJC 4 C/W Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Calculated based on the formula PD = TJ - TC RJC NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF1513T1 5.2-313 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Current (VDS = 40 Vdc, VGS = 0) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 10 Vdc, VDS = 0) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 12.5 Vdc, ID = 60 A) VGS(th) 1.0 1.7 2.1 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 500 mAdc) VDS(on) -- 0.65 -- Vdc Input Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1 MHz) Ciss -- 33 -- pF Output Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1 MHz) Coss -- 16.5 -- pF Reverse Transfer Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1 MHz) Crss -- 2.2 -- pF Common-Source Amplifier Power Gain (VDD = 12.5 Vdc, Pout = 3 Watts, IDQ = 50 mA, f = 520 MHz) Gps 10 11 -- dB Drain Efficiency (VDD = 12.5 Vdc, Pout = 3 Watts, IDQ = 50 mA, f = 520 MHz) 50 55 -- % OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture) MRF1513T1 5.2-314 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA B2 VGG C9 + C8 C7 R4 B1 C16 C17 R3 C15 + VDD C14 L1 C6 R2 Z7 Z8 Z9 Z10 N2 Z11 R1 N1 Z1 Z2 Z3 Z4 Z5 DUT Z6 C10 RF INPUT RF OUTPUT C13 C11 C12 C1 C2 B1, B2 C1, C13 C2, C3, C4, C10, C11, C12 C5, C6, C17 C7, C14 C8, C15 C9, C16 L1 N1, N2 R1, R3 R2 C3 C4 C5 R4 Z1 Z2 Z3 Z4 Z5 Z6, Z7 Z8 Z9 Z10 Z11 Board Short Ferrite Bead, Fair Rite Products (2743021446) 240 pF, 100 mil Chip Capacitor 0 to 20 pF, Trimmer Capacitor 120 pF, 100 mil Chip Capacitor 10 mF, 50 V Electrolytic Capacitor 1,200 pF, 100 mil Chip Capacitor 0.1 mF, 100 mil Chip Capacitor 55.5 nH, 5 Turn, Coilcraft Type N Flange Mount 15 , 0805 Chip Resistor 1 k, 1/8 W Resistor 33 k, 1/8 W Resistor 0.236 x 0.080 Microstrip 0.981 x 0.080 Microstrip 0.240 x 0.080 Microstrip 0.098 x 0.080 Microstrip 0.192 x 0.223 Microstrip 0.260 x 0.223 Microstrip 0.705 x 0.080 Microstrip 0.342 x 0.080 Microstrip 0.347 x 0.080 Microstrip 0.846 x 0.080 Microstrip Glass Teflon, 31 mils, 2 oz. Copper Figure 1. 450 - 520 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 450 - 520 MHz 5 0 VDD = 12.5 V IRL, INPUT RETURN LOSS (dB) Pout , OUTPUT POWER (WATTS) 470 MHz 4 520 MHz 450 MHz 500 MHz 3 2 1 -5 -10 500 MHz 470 MHz -15 520 MHz VDD = 12.5 V 450 MHz -20 0 0 0.05 0.10 0.15 Pin, INPUT POWER (WATTS) 0.20 Figure 2. Output Power versus Input Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 0 1 2 3 Pout, OUTPUT POWER (WATTS) 4 5 Figure 3. Input Return Loss versus Output Power MRF1513T1 5.2-315 TYPICAL CHARACTERISTICS, 450 - 520 MHz 70 16 450 MHz 15 470 MHz Eff, DRAIN EFFICIENCY (%) 520 MHz 500 MHz GAIN (dB) 14 13 12 11 60 450 MHz 50 500 MHz 40 30 VDD = 12.5 V VDD = 12.5 V 20 10 0 1 2 3 Pout, OUTPUT POWER (WATTS) 0 5 4 Figure 4. Gain versus Output Power 3 2 Pout, OUTPUT POWER (WATTS) 4 5 70 450 MHz 5 Eff, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 1 Figure 5. Drain Efficiency versus Output Power 6 470 MHz 500 MHz 4 520 MHz 3 2 0 100 500 200 300 400 IDQ, BIASING CURRENT (mA) 65 520 MHz 60 470 MHz 500 MHz 55 450 MHz 50 VDD = 12.5 V Pin = 20.3 dBm 45 VDD = 12.5 V Pin = 20.3 dBm 1 40 0 600 100 Figure 6. Output Power versus Biasing Current 400 200 300 IDQ, BIASING CURRENT (mA) 600 500 Figure 7. Drain Efficiency versus Biasing Current 5 80 4 Eff, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 470 MHz 520 MHz 3 450 MHz 520 MHz 2 470 MHz 500 MHz IDQ = 50 mA Pin = 20.3 dBm 1 470 MHz 70 520 MHz 60 450 MHz 50 500 MHz 40 IDQ = 50 mA Pin = 20.3 dBm 30 20 0 8 9 10 11 12 13 14 15 16 Figure 8. Output Power versus Supply Voltage MRF1513T1 5.2-316 8 9 10 11 12 13 14 15 16 VDD, SUPPLY VOLTAGE (VOLTS) VDD, SUPPLY VOLTAGE (VOLTS) Figure 9. Drain Efficiency versus Supply Voltage MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA B2 VGG C9 + C8 C7 B1 R4 C15 C16 R3 C14 + VDD C13 L1 C6 R2 Z7 Z8 Z9 N2 Z10 R1 N1 Z1 RF INPUT Z2 Z3 Z4 Z5 Z6 DUT C12 C10 RF OUTPUT C11 C1 C2 B1, B2 C1, C12 C2, C3, C4, C10, C11 C5, C6, C16 C7, C13 C8, C14 C9, C15 L1 N1, N2 R1 R2 C3 C4 C5 15 , 0805 Chip Resistor 33 k, 1/8 W Resistor 0.253 x 0.080 Microstrip 0.958 x 0.080 Microstrip 0.247 x 0.080 Microstrip 0.193 x 0.080 Microstrip 0.132 x 0.223 Microstrip 0.260 x 0.223 Microstrip 0.494 x 0.080 Microstrip 0.941 x 0.080 Microstrip 0.452 x 0.080 Microstrip Glass Teflon, 31 mils, 2 oz. Copper R3 R4 Z1 Z2 Z3 Z4 Z5 Z6, Z7 Z8 Z9 Z10 Board Short Ferrite Bead, Fair Rite Products (2743021446) 330 pF, 100 mil Chip Capacitor 1 to 20 pF, Trimmer Capacitor 120 pF, 100 mil Chip Capacitor 10 F, 50 V Electrolytic Capacitor 1,200 pF, 100 mil Chip Capacitor 0.1 mF, 100 mil Chip Capacitor 55.5 nH, 5 Turn, Coilcraft Type N Flange Mount 15 , 0805 Chip Resistor 1 k, 1/8 W Resistor Figure 10. 400 - 470 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 400 - 470 MHz 5 0 440 MHz 4 470 MHz 3 2 1 IRL, INPUT RETURN LOSS (dB) Pout , OUTPUT POWER (WATTS) 400 MHz VDD = 12.5 V -5 440 MHz -10 400 MHz -15 VDD = 12.5 V 470 MHz 0 -20 0 0.02 0.04 0.06 0.08 Pin, INPUT POWER (WATTS) 0.10 0.12 Figure 11. Output Power versus Input Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 0 1 2 3 Pout, OUTPUT POWER (WATTS) 4 5 Figure 12. Input Return Loss versus Output Power MRF1513T1 5.2-317 TYPICAL CHARACTERISTICS, 400 - 470 MHz 70 18 470 MHz 60 470 MHz 17 16 GAIN (dB) Eff, DRAIN EFFICIENCY (%) 400 MHz 440 MHz 15 14 13 400 MHz 50 440 MHz 40 30 20 VDD = 12.5 V 10 VDD = 12.5 V 12 0 0 1 2 3 Pout, OUTPUT POWER (WATTS) 4 0 5 Figure 13. Gain versus Output Power 1 2 3 Pout, OUTPUT POWER (WATTS) 4 5 Figure 14. Drain Efficiency versus Output Power 70 6 5 Eff, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 400 MHz 440 MHz 4 470 MHz 3 VDD = 12.5 V Pin = 18.7 dBm 2 65 470 MHz 60 440 MHz 55 400 MHz 50 VDD = 12.5 V Pin = 18.7 dBm 45 1 40 0 100 200 300 400 IDQ, BIASING CURRENT (mA) 500 0 600 100 Figure 15. Output Power versus Biasing Current 600 500 Figure 16. Drain Efficiency versus Biasing Current 5 80 400 MHz 4 440 MHz Eff, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 400 300 200 IDQ, BIASING CURRENT (mA) 470 MHz 3 2 IDQ = 50 mA Pin = 18.7 dBm 1 70 470 MHz 60 440 MHz 400 MHz 50 40 IDQ = 50 mA Pin = 18.7 dBm 30 20 0 8 9 10 11 12 13 14 VDD, SUPPLY VOLTAGE (VOLTS) Figure 17. Output Power versus Supply Voltage MRF1513T1 5.2-318 15 16 8 9 10 11 12 13 14 15 16 VDD, SUPPLY VOLTAGE (VOLTS) Figure 18. Drain Efficiency versus Supply Voltage MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA B2 VGG C9 + C8 C7 B1 R4 C16 C17 R3 + C15 VDD C14 L4 C6 RF OUTPUT C13 Z10 R2 Z6 RF INPUT N1 Z7 L2 L3 Z8 Z9 R1 L1 Z1 Z2 Z3 Z4 Z5 DUT N2 C12 C10 C1 C3 C11 C4 C5 C2 B1, B2 C1, C13 C2, C4, C10, C12 C3 C5 C6, C17 C7, C14 C8, C15 C9, C16 C11 L1 L2 L3 L4 N1, N2 R1 R2 R3 R4 Z1 Z2 Z3 Z4 Z5, Z6 Z7 Z8 Z9 Z10 Board Short Ferrite Bead, Fair Rite Products (2743021446) 330 pF, 100 mil Chip Capacitor 0 to 20 pF, Trimmer Capacitor 12 pF, 100 mil Chip Capacitor 130 pF, 100 mil Chip Capacitor 120 pF, 100 mil Chip Capacitor 10 F, 50 V Electrolytic Capacitor 1,000 pF, 100 mil Chip Capacitor 0.1 F, 100 mil Chip Capacitor 18 pF, 100 mil Chip Capacitor 26 nH, 4 Turn, Coilcraft 8 nH, 3 Turn, Coilcraft 55.5 nH, 5 Turn, Coilcraft 33 nH, 5 Turn, Coilcraft Type N Flange Mount 15 , 0805 Chip Resistor 56 , 1/8 W Chip Resistor 10 , 1/8 W Chip Resistor 33 k , 1/8 W Chip Resistor 0.115 x 0.080 Microstrip 0.230 x 0.080 Microstrip 1.034 x 0.080 Microstrip 0.202 x 0.080 Microstrip 0.260 x 0.223 Microstrip 1.088 x 0.080 Microstrip 0.149 x 0.080 Microstrip 0.171 x 0.080 Microstrip 0.095 x 0.080 Microstrip Glass Teflon, 31 mils, 2 oz. Copper W W W W Figure 19. 135 - 175 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 135 - 175 MHz 0 4 175 MHz 3 135 MHz IRL, INPUT RETURN LOSS (dB) Pout , OUTPUT POWER (WATTS) 5 155 MHz 2 1 -5 135 MHz -10 155 MHz 175 MHz -15 VDD = 12.5 V VDD = 12.5 V -20 0 0 0.10 0.15 0.05 Pin, INPUT POWER (WATTS) 0.20 Figure 20. Output Power versus Input Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 0 1 2 3 Pout, OUTPUT POWER (WATTS) 4 5 Figure 21. Input Return Loss versus Output Power MRF1513T1 5.2-319 TYPICAL CHARACTERISTICS, 135 - 175 MHz 18 70 135 MHz Eff, DRAIN EFFICIENCY (%) 175 MHz 16 GAIN (dB) 135 MHz 60 155 MHz 17 15 14 13 155 MHz 50 175 MHz 40 30 20 VDD = 12.5 V 10 VDD = 12.5 V 0 12 0 1 2 3 Pout, OUTPUT POWER (WATTS) 4 5 Figure 22. Gain versus Output Power 4 5 80 Eff, DRAIN EFFICIENCY (%) 175 MHz 5 155 MHz 4 135 MHz 3 VDD = 12.5 V Pin = 19.5 dBm 75 175 MHz 70 155 MHz 65 135 MHz 60 VDD = 12.5 V Pin = 19.5 dBm 55 50 2 0 100 500 200 300 400 IDQ, BIASING CURRENT (mA) 0 600 200 300 400 IDQ, BIASING CURRENT (mA) 100 Figure 24. Output Power versus Biasing Current 600 500 Figure 25. Drain Efficiency versus Biasing Current 5 80 4 Eff, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 3 2 Pout, OUTPUT POWER (WATTS) Figure 23. Drain Efficiency versus Output Power 6 Pout , OUTPUT POWER (WATTS) 1 0 3 175 MHz 2 155 MHz 135 MHz IDQ = 50 mA Pin = 19.5 dBm 1 70 135 MHz 175 MHz 60 155 MHz 50 40 IDQ = 50 mA Pin = 19.5 dBm 30 20 0 8 9 10 11 12 13 14 VDD, SUPPLY VOLTAGE (VOLTS) Figure 26. Output Power versus Supply Voltage MRF1513T1 5.2-320 15 16 8 9 10 11 12 13 14 15 16 VDD, SUPPLY VOLTAGE (VOLTS) Figure 27. Drain Efficiency versus Supply Voltage MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Zin 470 Zin 450 ZOL* f = 520 MHz 470 f = 520 MHz f = 400 MHz Zin 135 ZOL* 135 ZOL* Zo = 10 f = 175 MHz f = 400 MHz 450 Zo = 10 f = 175 MHz VDD = 12.5 V, IDQ = 50 mA, Pout = 3 W Zin VDD = 12.5 V, IDQ = 50 mA, Pout = 3 W VDD = 12.5 V, IDQ = 50 mA, Pout = 3 W f MHz Zin ZOL* f MHz Zin ZOL* f MHz 450 4.64 +j5.82 13.11 +j2.15 400 4.72 +j4.38 12.57 +j1.88 135 16.55 +j1.82 22.01 +j10.32 470 5.42 +j6.34 12.16 +j3.26 440 4.88 +j6.34 11.21 +j5.87 155 15.59 +j5.38 22.03 +j8.07 500 5.96 +j5.45 11.03 +j5.42 470 3.22 +j5.24 9.82 +j8.63 175 15.55 +j9.43 22.08 +j6.85 520 4.28 +j4.94 10.99 +j7.18 Zin = Complex conjugate of source impedance with parallel 15 resistor and 120 pF capacitor in series with gate. (See Figure 1). ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. = Complex conjugate of source impedance with parallel 15 resistor and 130 pF capacitor in series with gate. (See Figure 10). ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. Zin Zin ZOL* = Complex conjugate of source impedance with parallel 15 resistor and 130 pF capacitor in series with gate. (See Figure 19). ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability. Input Matching Network Output Matching Network Device Under Test Z in Z * OL Figure 28. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF1513T1 5.2-321 Table 1. Common Source Scattering Parameters (VDD = 12.5 Vdc) IDQ = 50 mA S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 50 0.93 -94 22.09 125 0.044 33 0.77 -81 100 0.81 -131 12.78 101 0.052 6 0.61 -115 200 0.76 -153 6.31 81 0.047 -10 0.59 -135 300 0.76 -160 3.92 69 0.044 -19 0.64 -142 400 0.77 -164 2.74 60 0.040 -26 0.70 -147 500 0.79 -167 1.99 54 0.036 -31 0.75 -151 600 0.80 -169 1.55 48 0.034 -37 0.80 -155 700 0.81 -171 1.25 44 0.028 -40 0.82 -158 800 0.82 -172 1.02 38 0.027 -42 0.86 -161 900 0.83 -173 0.85 35 0.017 -42 0.88 -163 1000 0.84 -175 0.70 29 0.018 -49 0.91 -166 IDQ = 500 mA f MHz S11 S21 S12 S22 50 |S11| 0.84 -127 |S21| 32.57 112 |S12| 0.025 17 |S22| 0.64 -130 100 0.80 -152 17.23 97 0.025 13 0.64 -153 200 0.78 -166 8.62 85 0.025 -9 0.65 -163 300 0.78 -171 5.58 79 0.023 -9 0.67 -166 400 0.78 -173 4.08 72 0.022 -9 0.69 -166 500 0.78 -175 3.14 68 0.020 -10 0.71 -167 600 0.79 -176 2.55 63 0.022 -15 0.74 -168 700 0.79 -177 2.14 60 0.019 -20 0.76 -168 800 0.80 -178 1.80 54 0.018 -31 0.79 -170 900 0.81 -178 1.54 51 0.015 -25 0.80 -170 1000 0.82 -179 1.31 46 0.012 -36 0.81 -172 IDQ = 1 A f MHz S11 S21 S12 S22 50 |S11| 0.84 -129 |S21| 32.57 111 |S12| 0.023 24 |S22| 0.61 -137 100 0.80 -153 17.04 97 0.024 13 0.64 -156 200 0.78 -167 8.52 85 0.023 5 0.65 -165 300 0.77 -172 5.53 79 0.020 -7 0.67 -167 400 0.77 -174 4.06 73 0.020 -11 0.69 -167 500 0.78 -175 3.13 69 0.021 -9 0.72 -167 600 0.78 -177 2.54 64 0.017 -26 0.74 -168 700 0.78 -177 2.13 60 0.017 -14 0.75 -168 800 0.79 -178 1.81 55 0.015 -23 0.78 -170 900 0.80 -178 1.54 51 0.013 -31 0.79 -170 1000 0.80 -179 1.30 46 0.011 -17 0.80 -172 MRF1513T1 5.2-322 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA APPLICATIONS INFORMATION DESIGN CONSIDERATIONS This device is a common-source, RF power, N-Channel enhancement mode, Lateral Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). Motorola Application Note AN211A, "FETs in Theory and Practice", is suggested reading for those not familiar with the construction and characteristics of FETs. This surface mount packaged device was designed primarily for VHF and UHF portable power amplifier applications. Manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. However, care should be taken in the design process to insure proper heat sinking of the device. The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to-source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications. Drain Cgd Gate Cds Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd Cgs Source DRAIN CHARACTERISTICS One critical figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, RDS(on), occurs in the linear region of the output characteristic and is specified at a specific gate-source voltage and drain current. The drain-source voltage under these conditions is termed VDS(on). For MOSFETs, VDS(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not recommended and may result in possible damage to the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The DC input resistance is very high - on the order of 109 -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate-to-source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate-drain capacitance. If the gate-to-source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate-threshold voltage and turn the device on. DC BIAS Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. RF power FETs operate optimally with a quiescent drain current (IDQ), whose value is application dependent. This device was characterized at IDQ = 150 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF1513T1 5.2-323 MOUNTING The specified maximum thermal resistance of 2C/W assumes a majority of the 0.065 x 0.180 source contact on the back side of the package is in good contact with an appropriate heat sink. As with all RF power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. Refer to Motorola Application Note AN4005/D, "Thermal Management and Mounting Method for the PLD-1.5 RF Power Surface Mount Package," and Engineering Bulletin EB209/D, "Mounting Method for RF Power Leadless Surface Mount Transistor" for additional information. AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Motorola Application Note AN721, "Impedance Matching Networks Applied to RF Power Transistors." Large-signal MRF1513T1 5.2-324 impedances are provided, and will yield a good first pass approximation. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of this device yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region. Two-port stability analysis with this device's S-parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Motorola Application Note AN215A, "RF Small-Signal Design Using Two-Port Parameters" for a discussion of two port network theory and stability. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs The MRF1517T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 volt portable FM equipment. * Specified Performance @ 520 MHz, 7.5 Volts D Output Power -- 8 Watts Power Gain -- 11 dB Efficiency -- 55% * Characterized with Series Equivalent Large-Signal Impedance Parameters * Excellent Thermal Stability * Capable of Handling 20:1 VSWR, @ 9.5 Vdc, G 520 MHz, 2 dB Overdrive * Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request S * RF Power Plastic Surface Mount Package * Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel. MRF1517T1 520 MHz, 8 W, 7.5 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET CASE 466-02, STYLE 1 (PLD-1.5) PLASTIC MAXIMUM RATINGS Rating Drain-Source Voltage (1) Symbol Value Unit VDSS 25 Vdc VGS 20 Vdc Drain Current -- Continuous ID 4 Adc Total Device Dissipation @ TC = 25C (2) Derate above 25C PD 62.5 0.50 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 150 C Symbol Max Unit RJC 2 C/W Gate-Source Voltage Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Not designed for 12.5 volt applications. (2) Calculated based on the formula PD = TJ - TC RJC NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF1517T1 5.2-325 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Current (VDS = 35 Vdc, VGS = 0) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 10 Vdc, VDS = 0) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 7.5 Vdc, ID = 120 Adc) VGS(th) 1.0 1.7 2.1 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) -- 0.5 -- Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs 0.9 -- -- S Input Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Ciss -- 66 -- pF Output Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Coss -- 38 -- pF Reverse Transfer Capacitance (VDS = 7.5 Vdc, VGS = 0, f = 1 MHz) Crss -- 6 -- pF Common-Source Amplifier Power Gain (VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz) Gps 10 11 -- dB Drain Efficiency (VDD = 7.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz) 50 55 -- % OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture) MRF1517T1 5.2-326 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA B2 VGG C9 + C7 C8 R3 B1 C18 R2 C17 C16 + C15 VDD L1 C6 R1 Z6 Z8 Z9 Z1 Z2 Z3 Z4 C14 Z5 C10 B1, B2 C1 C2, C3, C4, C10, C12, C13 C5, C11 C6, C18 C7, C15 C8, C16 C9, C17 C14 L1 N1, N2 C3 C4 C12 C11 C1 C2 N2 Z10 DUT N1 RF INPUT Z7 RF OUTPUT C13 C5 15 , 0805 Chip Resistor 1.0 k, 1/8 W Resistor 33 k, 1/2 W Resistor 0.315 x 0.080 Microstrip 1.415 x 0.080 Microstrip 0.322 x 0.080 Microstrip 0.022 x 0.080 Microstrip 0.260 x 0.223 Microstrip 0.050 x 0.080 Microstrip 0.625 x 0.080 Microstrip 0.800 x 0.080 Microstrip 0.589 x 0.080 Microstrip Glass Teflon, 31 mils, 2 oz. Copper R1 R2 R3 Z1 Z2 Z3 Z4 Z5, Z6 Z7 Z8 Z9 Z10 Board Short Ferrite Bead, Fair Rite Products (2743021446) 300 pF, 100 mil Chip Capacitor 0 to 20 pF, Trimmer Capacitor 43 pF, 100 mil Chip Capacitor 120 pF, 100 mil Chip Capacitor 10 F, 50 V Electrolytic Capacitor 0.1 F, 100 mil Chip Capacitor 1,000 pF, 100 mil Chip Capacitor 330 pF, 100 mil Chip Capacitor 55.5 nH, 5 Turn, Coilcraft Type N Flange Mount Figure 1. 480 - 520 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 480 - 520 MHz 0 10 520 MHz 480 MHz 8 IRL, INPUT RETURN LOSS (dB) Pout , OUTPUT POWER (WATTS) 500 MHz 6 4 2 -5 -10 480 MHz 520 MHz -15 500 MHz -20 VDD = 7.5 Vdc VDD = 7.5 Vdc -25 0 0 0.2 0.4 0.6 Pin, INPUT POWER (WATTS) 0.8 1.0 Figure 2. Output Power versus Input Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 1 2 3 4 5 6 7 8 Pout, OUTPUT POWER (WATTS) 9 10 Figure 3. Input Return Loss versus Output Power MRF1517T1 5.2-327 TYPICAL CHARACTERISTICS, 480 - 520 MHz 18 80 500 MHz 480 MHz 70 Eff, DRAIN EFFICIENCY (%) 16 520 MHz GAIN (dB) 14 12 10 8 480 MHz 60 50 500 MHz 520 MHz 40 30 20 VDD = 7.5 Vdc VDD = 7.5 Vdc 10 6 1 2 4 5 6 7 8 Pout, OUTPUT POWER (WATTS) 3 9 10 1 Figure 4. Gain versus Output Power 9 10 11 80 10 500 MHz Eff, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 6 7 8 4 5 Pout, OUTPUT POWER (WATTS) Figure 5. Drain Efficiency versus Output Power 12 8 520 MHz 480 MHz 6 4 Pin = 27 dBm VDD = 7.5 Vdc 2 0 480 MHz 70 500 MHz 60 520 MHz 50 40 Pin = 27 dBm VDD = 7.5 Vdc 30 0 200 400 600 IDQ, BIASING CURRENT (mA) 800 0 1000 Figure 6. Output Power versus Biasing Current 200 400 600 IDQ, BIASING CURRENT (mA) 800 1000 Figure 7. Drain Efficiency versus Biasing Current 12 80 10 Eff, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 3 2 500 MHz 8 520 MHz 6 480 MHz 4 Pin = 27 dBm IDQ = 150 mA 2 480 MHz 70 500 MHz 60 520 MHz 50 40 Pin = 27 dBm IDQ = 150 mA 30 0 5 6 7 8 9 10 Figure 8. Output Power versus Supply Voltage MRF1517T1 5.2-328 5 6 7 8 9 10 VDD, SUPPLY VOLTAGE (VOLTS) VDD, SUPPLY VOLTAGE (VOLTS) Figure 9. Drain Efficiency versus Supply Voltage MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA B2 VGG C8 C7 + C6 B1 R3 VDD + C17 R2 C16 C15 C14 L1 C5 R1 Z6 Z5 Z7 Z8 DUT N1 Z1 RF INPUT Z2 Z3 C1 B1, B2 C1, C13 C2, C3, C4, C10, C11, C12 C5, C17 C6, C14 C7, C15 C8, C16 C9 L1 N1, N2 C3 RF OUTPUT C13 Z4 C10 C2 N2 Z9 C9 C11 C12 C4 12 , 0805 Chip Resistor 1.0 k, 1/8 W Resistor 33 k, 1/2 W Resistor 0.617 x 0.080 Microstrip 0.723 x 0.080 Microstrip 0.513 x 0.080 Microstrip 0.260 x 0.223 Microstrip 0.048 x 0.080 Microstrip 0.577 x 0.080 Microstrip 1.135 x 0.080 Microstrip 0.076 x 0.080 Microstrip Glass Teflon, 31 mils, 2 oz. Copper R1 R2 R3 Z1 Z2 Z3 Z4, Z5 Z6 Z7 Z8 Z9 Board Short Ferrite Bead, Fair Rite Products (2743021446) 300 pF, 100 mil Chip Capacitor 0 to 20 pF, Trimmer Capacitor 130 pF, 100 mil Chip Capacitor 10 F, 50 V Electrolytic Capacitor 0.1 F, 100 mil Chip Capacitor 1,000 pF, 100 mil Chip Capacitor 33 pF, 100 mil Chip Capacitor 55.5 nH, 5 Turn, Coilcraft Type N Flange Mount Figure 10. 400 - 440 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 400 - 440 MHz 10 0 400 MHz IRL, INPUT RETURN LOSS (dB) Pout , OUTPUT POWER (WATTS) 9 8 420 MHz 7 6 440 MHz 5 4 3 2 1 -5 400 MHz -10 420 MHz -15 440 MHz -20 VDD = 7.5 Vdc VDD = 7.5 Vdc 0 -25 0 0.1 0.2 0.3 Pin, INPUT POWER (WATTS) 0.4 0.5 Figure 11. Output Power versus Input Power 1 2 3 6 7 4 5 Pout, OUTPUT POWER (WATTS) 8 9 10 Figure 12. Input Return Loss versus Output Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF1517T1 5.2-329 TYPICAL CHARACTERISTICS, 400 - 440 MHz 17 70 420 MHz 400 MHz GAIN (dB) 13 440 MHz 60 Eff, DRAIN EFFICIENCY (%) 15 440 MHz 11 9 7 420 MHz 50 40 400 MHz 30 20 10 VDD = 7.5 Vdc 1 2 3 4 6 7 8 5 Pout, OUTPUT POWER (WATTS) 9 1 10 Figure 13. Gain versus Output Power 3 4 5 6 7 8 Pout, OUTPUT POWER (WATTS) 9 10 11 80 400 MHz 10 420 MHz 440 MHz 8 6 4 Eff, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 2 Figure 14. Drain Efficiency versus Output Power 12 Pin = 25.5 dBm VDD = 7.5 Vdc 2 0 70 440 MHz 60 420 MHz 400 MHz 50 40 Pin = 25.5 dBm VDD = 7.5 Vdc 30 0 200 400 600 IDQ, BIASING CURRENT (mA) 800 0 1000 Figure 15. Output Power versus Biasing Current 200 400 600 IDQ, BIASING CURRENT (mA) 800 1000 Figure 16. Drain Efficiency versus Biasing Current 12 80 420 MHz 10 400 MHz Eff, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) VDD = 7.5 Vdc 0 5 8 440 MHz 6 4 2 Pin = 25.5 dBm IDQ = 150 mA 70 420 MHz 60 440 MHz 400 MHz 50 40 Pin = 25.5 dBm IDQ = 150 mA 30 0 5 6 7 8 9 10 Figure 17. Output Power versus Supply Voltage MRF1517T1 5.2-330 5 6 7 8 9 10 VDD, SUPPLY VOLTAGE (VOLTS) VDD, SUPPLY VOLTAGE (VOLTS) Figure 18. Drain Efficiency versus Supply Voltage MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA B2 VGG C8 C7 + C6 R3 B1 C16 C17 R2 C15 VDD + C14 L1 C5 R1 Z5 Z7 Z1 Z2 Z3 Z4 C10 C9 C2 C1 C2, C3, C4, C10, C11, C12 C5, C17 C6, C14 C7, C15 C8, C16 C9 C13 L1 N1, N2 C3 N2 Z9 RF OUTPUT C13 C1 B1, B2 Z8 DUT N1 RF INPUT Z6 C11 C12 C4 15 , 0805 Chip Resistor 1.0 k, 1/8 W Resistor 33 k, 1/2 W Resistor 0.471 x 0.080 Microstrip 1.082 x 0.080 Microstrip 0.372 x 0.080 Microstrip 0.260 x 0.223 Microstrip 0.050 x 0.080 Microstrip 0.551 x 0.080 Microstrip 0.825 x 0.080 Microstrip 0.489 x 0.080 Microstrip Glass Teflon, 31 mils, 2 oz. Copper R1 R2 R3 Z1 Z2 Z3 Z4, Z5 Z6 Z7 Z8 Z9 Board Short Ferrite Bead, Fair Rite Products (2743021446) 240 pF, 100 mil Chip Capacitor 0 to 20 pF, Trimmer Capacitor 130 pF, 100 mil Chip Capacitor 10 mF, 50 V Electrolytic Capacitor 0.1 mF, 100 mil Chip Capacitor 1,000 pF, 100 mil Chip Capacitor 39 pF, 100 mil Chip Capacitor 330 pF, 100 mil Chip Capacitor 55.5 nH, 5 Turn, Coilcraft Type N Flange Mount Figure 19. 440 - 480 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 440 - 480 MHz 10 0 8 IRL, INPUT RETURN LOSS (dB) Pout , OUTPUT POWER (WATTS) 9 440 MHz 7 6 5 460 MHz 4 480 MHz 3 2 1 -5 -10 460 MHz 440 MHz -15 480 MHz -20 VDD = 7.5 Vdc VDD = 7.5 Vdc 0 -25 0.0 0.2 0.4 0.6 Pin, INPUT POWER (WATTS) 1 0.8 Figure 20. Output Power versus Input Power 2 3 5 4 6 7 Pout, OUTPUT POWER (WATTS) 8 9 10 Figure 21. Input Return Loss versus Output Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF1517T1 5.2-331 TYPICAL CHARACTERISTICS, 440 - 480 MHz 17 70 440 MHz Eff, DRAIN EFFICIENCY (%) 460 MHz 13 GAIN (dB) 460 MHz 60 15 480 MHz 11 9 7 480 MHz 50 440 MHz 40 30 20 10 VDD = 7.5 Vdc 1 2 3 6 7 8 4 5 Pout, OUTPUT POWER (WATTS) 9 10 1 Figure 22. Gain versus Output Power 2 3 5 4 6 7 8 Pout, OUTPUT POWER (WATTS) 10 11 80 Eff, DRAIN EFFICIENCY (%) 440 MHz 10 480 MHz 8 460 MHz 6 4 2 70 480 MHz 60 460 MHz 440 MHz 50 40 Pin = 27.5 dBm Pin = 27.5 dBm 0 30 0 200 400 600 IDQ, BIASING CURRENT (mA) 800 0 1000 Figure 24. Output Power versus Biasing Current 200 400 600 IDQ, BIASING CURRENT (mA) 800 1000 Figure 25. Drain Efficiency versus Biasing Current 12 80 10 Eff, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 9 Figure 23. Drain Efficiency versus Output Power 12 Pout , OUTPUT POWER (WATTS) VDD = 7.5 Vdc 0 5 440 MHz 8 460 MHz 480 MHz 6 4 70 480 MHz 60 460 MHz 440 MHz 50 40 2 Pin = 27.5 dBm Pin = 27.5 dBm 30 0 5 6 7 8 9 10 Figure 26. Output Power versus Supply Voltage MRF1517T1 5.2-332 5 6 7 8 9 10 VDD, SUPPLY VOLTAGE (VOLTS) VDD, SUPPLY VOLTAGE (VOLTS) Figure 27. Drain Efficiency versus Supply Voltage MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 520 f = 440 MHz Zin f = 440 MHz 480 Zin 400 Zin f = 480 MHz 520 ZOL* ZOL* f = 480 MHz f = 440 MHz 440 ZOL* f = 480 MHz 400 Zin Zo = 10 Zo = 10 VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W Zo = 10 VDD = 7.5 V, IDQ = 150 mA, Pout = 8 W f MHz Zin ZOL* f MHz Zin ZOL* f MHz Zin ZOL* 480 1.06 +j1.82 3.51 +j0.99 440 1.62 +j3.41 3.25 +j0.98 400 1.96 +j3.32 2.52 +j0.39 500 0.97 +j2.01 2.82 +j0.75 460 1.85 +j3.35 3.05 +j0.93 420 2.31 +j3.56 2.61 +j0.64 520 0.975 +j2.37 1.87 +j1.03 480 1.91 +j3.31 2.54 +j0.84 440 1.60 +j3.45 2.37 +j1.04 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. Zin = Complex conjugate of source impedance. ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. Zin = Complex conjugate of source impedance. ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability. Input Matching Network Output Matching Network Device Under Test Z in Z * OL Figure 28. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF1517T1 5.2-333 Table 1. Common Source Scattering Parameters (VDD = 7.5 Vdc) IDQ = 150 mA f MHz MH S11 S21 |S11| S12 |S21| |S12| S22 |S22| 50 0.84 -152 17.66 97 0.016 0 0.77 -167 100 0.84 -164 8.86 85 0.016 5 0.78 -172 200 0.86 -170 4.17 72 0.015 -5 0.79 -173 300 0.88 -171 2.54 62 0.014 -8 0.80 -172 400 0.90 -172 1.72 55 0.013 -25 0.83 -172 500 0.92 -172 1.28 50 0.013 -10 0.84 -172 600 0.94 -173 0.98 46 0.014 -22 0.86 -171 700 0.95 -173 0.76 41 0.010 -30 0.86 -172 800 0.96 -174 0.61 38 0.011 -14 0.86 -171 900 0.96 -175 0.50 33 0.011 -31 0.85 -172 1000 0.97 -175 0.40 31 0.006 55 0.88 -171 IDQ = 800 mA f MH MHz S11 S21 |S11| S12 |S21| |S12| 50 0.90 -165 20.42 94 0.018 100 0.89 -172 10.20 87 200 0.90 -175 4.96 79 300 0.90 -176 3.17 400 0.91 -176 500 0.92 600 700 S22 |S22| 1 0.76 -164 0.015 -7 0.77 -170 0.015 -12 0.77 -172 73 0.017 -2 0.80 -171 2.26 67 0.013 1 0.82 -172 -176 1.75 63 0.011 -6 0.83 -171 0.93 -176 1.39 59 0.012 -31 0.85 -171 0.94 -176 1.14 55 0.015 -34 0.88 -171 800 0.94 -176 0.93 51 0.008 -22 0.87 -171 900 0.95 -177 0.78 45 0.007 2 0.87 -172 1000 0.96 -177 0.65 43 0.008 -40 0.90 -170 IDQ = 1.5 A f MHz MH S11 |S11| S21 S12 |S21| |S12| S22 |S22| 50 0.92 -165 19.90 95 0.017 3 0.76 -164 100 0.90 -172 9.93 88 0.018 2 0.77 -170 200 0.91 -176 4.84 80 0.016 -4 0.77 -172 300 0.91 -176 3.10 74 0.014 -11 0.80 -172 400 0.92 -176 2.22 68 0.014 -14 0.81 -172 500 0.93 -176 1.73 64 0.016 -8 0.83 -171 600 0.94 -176 1.39 61 0.013 -24 0.85 -171 700 0.94 -176 1.12 56 0.013 -24 0.87 -171 800 0.95 -176 0.93 52 0.009 -12 0.87 -171 900 0.96 -177 0.78 46 0.008 10 0.87 -173 1000 0.97 -177 0.64 44 0.012 4 0.89 -169 MRF1517T1 5.2-334 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA APPLICATIONS INFORMATION DESIGN CONSIDERATIONS This device is a common-source, RF power, N-Channel enhancement mode, Lateral Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). Motorola Application Note AN211A, "FETs in Theory and Practice", is suggested reading for those not familiar with the construction and characteristics of FETs. This surface mount packaged device was designed primarily for VHF and UHF portable power amplifier applications. Manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. However, care should be taken in the design process to insure proper heat sinking of the device. The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to-source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications. Drain Cgd Gate Cds Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd Cgs Source DRAIN CHARACTERISTICS One critical figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, RDS(on), occurs in the linear region of the output characteristic and is specified at a specific gate-source voltage and drain current. The drain-source voltage under these conditions is termed VDS(on). For MOSFETs, VDS(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not recommended and may result in possible damage to the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The DC input resistance is very high - on the order of 109 -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate-to-source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate-drain capacitance. If the gate-to-source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate-threshold voltage and turn the device on. DC BIAS Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. RF power FETs operate optimally with a quiescent drain current (IDQ), whose value is application dependent. This device was characterized at IDQ = 150 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF1517T1 5.2-335 MOUNTING The specified maximum thermal resistance of 2C/W assumes a majority of the 0.065 x 0.180 source contact on the back side of the package is in good contact with an appropriate heat sink. As with all RF power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. Refer to Motorola Application Note AN4005/D, "Thermal Management and Mounting Method for the PLD-1.5 RF Power Surface Mount Package," and Engineering Bulletin EB209/D, "Mounting Method for RF Power Leadless Surface Mount Transistor" for additional information. AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Motorola Application Note AN721, "Impedance Matching Networks Applied to RF Power Transistors." Large-signal MRF1517T1 5.2-336 impedances are provided, and will yield a good first pass approximation. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of this device yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region. Two-port stability analysis with this device's S-parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Motorola Application Note AN215A, "RF Small-Signal Design Using Two-Port Parameters" for a discussion of two port network theory and stability. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET The MRF1518T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 12.5 volt mobile FM equipment. * Specified Performance @ 520 MHz, 12.5 Volts D Output Power -- 8 Watts Power Gain -- 11 dB Efficiency -- 55% * Capable of Handling 20:1 VSWR, @ 15.5 Vdc, 520 MHz, 2 dB Overdrive * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal G Impedance Parameters * RF Power Plastic Surface Mount Package * Broadband UHF/VHF Demonstration Amplifier S Information Available Upon Request * Available in Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel. MRF1518T1 520 MHz, 8 W, 12.5 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET CASE 466-02, STYLE 1 (PLD-1.5) PLASTIC MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 40 Vdc Gate-Source Voltage VGS 20 Vdc Drain Current -- Continuous ID 4 Adc Total Device Dissipation @ TC = 25C (1) Derate above 25C PD 62.5 0.50 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 150 C Symbol Max Unit RJC 2 C/W Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Calculated based on the formula PD = TJ - TC RJC NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF1518T1 5.2-337 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Current (VDS = 40 Vdc, VGS = 0) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 10 Vdc, VDS = 0) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 12.5 Vdc, ID = 100 A) VGS(th) 1.0 1.6 2.1 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) -- 0.4 -- Vdc Input Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1 MHz) Ciss -- 66 -- pF Output Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1 MHz) Coss -- 33 -- pF Reverse Transfer Capacitance (VDS = 12.5 Vdc, VGS = 0, f = 1 MHz) Crss -- 4.5 -- pF Common-Source Amplifier Power Gain (VDD = 12.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz) Gps 10 11 -- dB Drain Efficiency (VDD = 12.5 Vdc, Pout = 8 Watts, IDQ = 150 mA, f = 520 MHz) 50 55 -- % OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture) MRF1518T1 5.2-338 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA B2 VGG C8 + C7 C6 R4 B1 C15 C16 R3 + C14 VDD C13 L1 C5 R2 Z6 Z7 Z8 Z9 N2 Z10 RF OUTPUT R1 N1 RF INPUT Z1 Z2 Z3 Z4 Z5 DUT C12 C10 C9 C11 C1 C2 B1, B2 C3 C4 R4 Z1 Z2 Z3 Z4 Z5, Z6 Z7 Z8 Z9 Z10 Board Short Ferrite Bead, Fair Rite Products (2743021446) 240 pF, 100 mil Chip Capacitor 0 to 20 pF, Trimmer Capacitor 82 pF, 100 mil Chip Capacitor 120 pF, 100 mil Chip Capacitor 10 F, 50 V Electrolytic Capacitor 1,200 pF, 100 mil Chip Capacitor 0.1 mF, 100 mil Chip Capacitor 30 pF, 100 mil Chip Capacitor 55.5 nH, 5 Turn, Coilcraft Type N Flange Mount 15 , 0805 Chip Resistor 51 , 1/2 W Resistor 10 , 0805 Chip Resistor C1, C14 C2, C3, C10, C11 C4 C5, C16 C6, C13 C7, C14 C8, C15 C9 L1 N1, N2 R1 R2 R3 33 k, 1/8 W Resistor 0.451 x 0.080 Microstrip 1.005 x 0.080 Microstrip 0.020 x 0.080 Microstrip 0.155 x 0.080 Microstrip 0.260 x 0.223 Microstrip 0.065 x 0.080 Microstrip 0.266 x 0.080 Microstrip 1.113 x 0.080 Microstrip 0.433 x 0.080 Microstrip Glass Teflon, 31 mils, 2 oz. Copper Figure 1. 450 - 520 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 450 - 520 MHz 12 0 10 470 MHz IRL, INPUT RETURN LOSS (dB) Pout , OUTPUT POWER (WATTS) VDD = 12.5 V 450 MHz 8 500 MHz 6 520 MHz 4 2 -5 470 MHz -10 450 MHz 500 MHz -15 520 MHz VDD = 12.5 V -20 0 0 0.1 0.3 0.2 0.4 Pin, INPUT POWER (WATTS) 0.5 0.6 Figure 2. Output Power versus Input Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 0 1 2 3 4 5 6 7 8 Pout, OUTPUT POWER (WATTS) 9 10 11 Figure 3. Input Return Loss versus Output Power MRF1518T1 5.2-339 TYPICAL CHARACTERISTICS, 450 - 520 MHz 17 80 470 MHz 450 MHz GAIN (dB) Eff, DRAIN EFFICIENCY (%) 520 MHz 13 500 MHz 11 9 7 60 50 520 MHz 40 500 MHz 30 20 VDD = 12.5 V 10 VDD = 12.5 V 0 5 0 2 1 3 4 5 6 7 8 Pout, OUTPUT POWER (WATTS) 9 11 10 2 3 4 5 6 7 8 9 Pout, OUTPUT POWER (WATTS) 10 11 12 Figure 5. Drain Efficiency versus Output Power 70 12 470 MHz 65 10 470 MHz Eff, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 1 0 Figure 4. Gain versus Output Power 450 MHz 8 520 MHz 6 500 MHz 4 VDD = 12.5 V Pin = 26.2 dBm 2 450 MHz 60 500 MHz 55 520 MHz 50 45 40 VDD = 12.5 V Pin = 26.2 dBm 35 0 30 0 200 800 400 600 IDQ, BIASING CURRENT (mA) 0 1000 200 Figure 6. Output Power versus Biasing Current 400 600 IDQ, BIASING CURRENT (mA) 1000 800 Figure 7. Drain Efficiency versus Biasing Current 12 80 470 MHz 11 75 450 MHz 10 Eff, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 470 MHz 450 MHz 70 15 9 8 7 6 520 MHz 5 500 MHz 4 8 9 10 11 12 13 14 65 450 MHz 60 520 MHz 55 500 MHz 50 45 IDQ = 150 mA Pin = 26.2 dBm 35 30 15 16 8 9 10 11 12 13 14 15 16 VDD, SUPPLY VOLTAGE (VOLTS) VDD, SUPPLY VOLTAGE (VOLTS) Figure 8. Output Power versus Supply Voltage MRF1518T1 5.2-340 470 MHz 40 IDQ = 150 mA Pin = 26.2 dBm 3 2 70 Figure 9. Drain Efficiency versus Supply Voltage MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA B2 VGG C10 + C9 C8 B1 R4 C18 R3 C17 + C16 VDD C15 L1 C7 R2 Z7 Z8 Z9 Z10 N2 Z11 R1 N1 Z1 RF INPUT Z2 Z3 Z4 Z5 Z6 DUT C14 C11 C12 RF OUTPUT C13 C1 C2 B1, B2 C1, C14 C2, C3, C4, C11, C12, C13 C5 C6 C7, C18 C8, C15 C9, C16 C10, C17 L1 N1, N2 R1 R2 C3 C4 C5 C6 10 , 0805 Chip Resistor 33 k, 1/8 W Resistor 0.476 x 0.080 Microstrip 0.724 x 0.080 Microstrip 0.348 x 0.080 Microstrip 0.048 x 0.080 Microstrip 0.175 x 0.080 Microstrip 0.260 x 0.223 Microstrip 0.239 x 0.080 Microstrip 0.286 x 0.080 Microstrip 0.806 x 0.080 Microstrip 0.553 x 0.080 Microstrip Glass Teflon, 31 mils, 2 oz. Copper R3 R4 Z1 Z2 Z3 Z4 Z5 Z6, Z7 Z8 Z9 Z10 Z11 Board Short Ferrite Bead, Fair Rite Products (2743021446) 240 pF, 100 mil Chip Capacitor 0 to 20 pF, Trimmer Capacitor 30 pF, 100 mil Chip Capacitor 47 pF, 100 mil Chip Capacitor 120 pF, 100 mil Chip Capacitor 10 F, 50 V Electrolytic Capacitor 1,200 pF, 100 mil Chip Capacitor 0.1 F, 100 mil Chip Capacitor 55.5 nH, 5 Turn, Coilcraft Type N Flange Mount 15 , 0805 Chip Resistor 51 , 1/2 W Resistor Figure 10. 400 - 470 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 400 - 470 MHz 12 0 10 IRL, INPUT RETURN LOSS (dB) Pout , OUTPUT POWER (WATTS) 440 MHz 400 MHz 470 MHz 8 6 4 VDD = 12.5 V 2 VDD = 12.5 V -5 440 MHz -10 400 MHz -15 470 MHz 0 -20 0 0.1 0.2 0.3 0.4 0.5 Pin, INPUT POWER (WATTS) 0.6 0.7 Figure 11. Output Power versus Input Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 0 1 2 3 4 5 6 7 8 9 Pout, OUTPUT POWER (WATTS) 10 11 12 Figure 12. Input Return Loss versus Output Power MRF1518T1 5.2-341 TYPICAL CHARACTERISTICS, 400 - 470 MHz 80 17 70 15 Eff, DRAIN EFFICIENCY (%) GAIN (dB) 13 400 MHz 470 MHz 11 9 VDD = 12.5 V 7 60 400 MHz 50 40 30 20 VDD = 12.5 V 10 5 0 0 5 6 7 8 4 3 9 Pout, OUTPUT POWER (WATTS) 2 1 10 11 0 12 Figure 13. Gain versus Output Power 1 2 10 11 12 70 440 MHz 10 470 MHz 8 6 4 VDD = 12.5 V Pin = 26.8 dBm 2 470 MHz 65 400 MHz Eff, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 5 6 7 8 9 3 4 Pout, OUTPUT POWER (WATTS) Figure 14. Drain Efficiency versus Output Power 12 440 MHz 60 400 MHz 55 50 45 VDD = 12.5 V Pin = 26.8 dBm 40 35 0 30 0 200 400 600 IDQ, BIASING CURRENT (mA) 800 0 1000 400 600 IDQ, BIASING CURRENT (mA) 200 Figure 15. Output Power versus Biasing Current 1000 800 Figure 16. Drain Efficiency versus Biasing Current 12 80 440 MHz 11 75 10 Eff, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 440 MHz 470 MHz 440 MHz 400 MHz 9 8 7 6 470 MHz 5 4 8 9 10 11 12 13 14 VDD, SUPPLY VOLTAGE (VOLTS) Figure 17. Output Power versus Supply Voltage MRF1518T1 5.2-342 15 65 470 MHz 60 55 440 MHz 50 400 MHz 45 40 IDQ = 150 mA Pin = 26.8 dBm 3 2 70 IDQ = 150 mA Pin = 26.8 dBm 35 30 16 8 9 10 11 12 13 14 15 16 VDD, SUPPLY VOLTAGE (VOLTS) Figure 18. Drain Efficiency versus Supply Voltage MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA B2 VGG C9 + C8 C7 R4 B1 C16 C17 R3 C15 + VDD C14 L4 C6 R2 Z6 RF INPUT Z7 Z8 L3 L2 Z9 RF OUTPUT C13 Z10 R1 L1 Z1 Z2 Z3 Z4 Z5 DUT N2 C12 C10 N1 C1 C11 C4 C3 C5 C2 B1, B2 L4 N1, N2 R1 R2 R3 R4 Z1 Z2 Z3 Z4 Z5, Z6 Z7 Z8 Z9 Z10 Board Short Ferrite Bead, Fair Rite Products (2743021446) 330 pF, 100 mil Chip Capacitor 0 to 20 pF, Trimmer Capacitor 12 pF, 100 mil Chip Capacitor 43 pF, 100 mil Chip Capacitor 75 pF, 100 mil Chip Capacitor 10 F, 50 V Electrolytic Capacitor 1,200 pF, 100 mil Chip Capacitor 0.1 F, 100 mil Chip Capacitor 75 pF, 100 mil Chip Capacitor 13 pF, 100 mil Chip Capacitor 26 nH, 4 Turn, Coilcraft 5 nH, 2 Turn, Coilcraft 33 nH, 5 Turn, Coilcraft C1, C13 C2, C4, C11 C3 C5 C6, C17 C7, C14 C8, C15 C9, C16 C10 C12 L1 L2 L3 55.5 nH, 5 Turn, Coilcraft Type N Flange Mount 15 , 0805 Chip Resistor 56 , 1/4 W Carbon Resistor 100 , 0805 Chip Resistor 33 k , 1/8 W Carbon Resistor 0.115 x 0.080 Microstrip 0.255 x 0.080 Microstrip 1.037 x 0.080 Microstrip 0.192 x 0.080 Microstrip 0.260 x 0.223 Microstrip 0.125 x 0.080 Microstrip 0.962 x 0.080 Microstrip 0.305 x 0.080 Microstrip 0.155 x 0.080 Microstrip Glass Teflon, 31 mils, 2 oz. Copper W W W W Figure 19. 135 - 175 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 135 - 175 MHz 0 VDD = 12.5 V 10 IRL, INPUT RETURN LOSS (dB) Pout , OUTPUT POWER (WATTS) 12 8 155 MHz 6 175 MHz 4 135 MHz 2 -5 155 MHz -10 135 MHz 175 MHz -15 VDD = 12.5 V 0 -20 0 0.1 0.2 0.3 Pin, INPUT POWER (WATTS) 0.4 Figure 20. Output Power versus Input Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 0 1 2 3 4 5 6 7 8 9 Pout, OUTPUT POWER (WATTS) 10 11 12 Figure 21. Input Return Loss versus Output Power MRF1518T1 5.2-343 TYPICAL CHARACTERISTICS, 135 - 175 MHz 19 80 135 MHz 70 Eff, DRAIN EFFICIENCY (%) 17 175 MHz GAIN (dB) 15 155 MHz 13 11 9 155 MHz 60 135 MHz 50 175 MHz 40 30 20 VDD = 12.5 V 10 VDD = 12.5 V 0 7 0 2 1 4 3 5 6 7 8 9 Pout, OUTPUT POWER (WATTS) 10 11 12 0 Figure 22. Gain versus Output Power 1 2 11 12 70 175 MHz 155 MHz 135 MHz 65 10 135 MHz 155 MHz Eff, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 10 Figure 23. Drain Efficiency versus Output Power 12 8 6 4 VDD = 12.5 V Pin = 24.5 dBm 2 60 175 MHz 55 50 45 40 VDD = 12.5 V Pin = 24.5 dBm 35 0 30 200 0 800 400 600 IDQ, BIASING CURRENT (mA) 1000 200 0 Figure 24. Output Power versus Biasing Current 800 400 600 IDQ, BIASING CURRENT (mA) 1000 Figure 25. Drain Efficiency versus Biasing Current 12 80 135 MHz 11 75 155 MHz 10 Eff, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 4 5 7 8 3 9 6 Pout, OUTPUT POWER (WATTS) 175 MHz 9 8 7 6 5 IDQ = 150 mA Pin = 24.5 dBm 4 70 155 MHz 65 135 MHz 60 175 MHz 55 50 45 IDQ = 150 mA Pin = 24.5 dBm 40 3 2 35 30 8 9 10 11 12 13 14 VDD, SUPPLY VOLTAGE (VOLTS) Figure 26. Output Power versus Supply Voltage MRF1518T1 5.2-344 15 16 8 9 10 11 12 13 14 15 16 VDD, SUPPLY VOLTAGE (VOLTS) Figure 27. Drain Efficiency versus Supply Voltage MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Zo = 10 f = 470 MHz Zin 520 520 ZOL* f = 450 MHz f = 450 MHz Zin 400 ZOL* f = 470 MHz 175 135 ZOL* 400 Zo = 10 Zin f = 175 MHz f = 135 MHz VDD = 12.5 V, IDQ = 150 mA, Pout = 8 W Zin VDD = 12.5 V, IDQ = 150 mA, Pout = 8 W VDD = 12.5 V, IDQ = 150 mA, Pout = 8 W f MHz Zin ZOL* f MHz Zin ZOL* f MHz Zin ZOL* 450 4.9 +j2.85 6.42 +j3.23 400 4.28 +j2.36 4.41 +j0.67 135 18.31 -j0.76 8.97 +j2.62 470 4.85 +j3.71 4.59 +j3.61 440 6.45 +j5.13 4.14 +j2.53 155 17.72 +j1.85 9.69 +j2.81 500 4.63 +j3.84 4.72 +j3.12 470 5.91 +j3.34 3.92 +j4.02 175 18.06 +j5.23 7.94 +j1.14 520 3.52 +j3.92 3.81 +j3.27 Zin = Complex conjugate of source impedance with parallel 15 resistor and 82 pF capacitor in series with gate. (See Figure 1). ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. = Complex conjugate of source impedance with parallel 15 resistor and 47 pF capacitor in series with gate. (See Figure 10). ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. Zin = Complex conjugate of source impedance with parallel 15 resistor and 43 pF capacitor in series with gate. (See Figure 19). ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability. Input Matching Network Output Matching Network Device Under Test Z in Z * OL Figure 28. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF1518T1 5.2-345 Table 1. Common Source Scattering Parameters (VDD = 12.5 Vdc) IDQ = 150 mA S11 S21 S12 S22 f MHz |S11| |S21| |S12| |S22| 50 0.88 -148 18.91 99 0.033 11 0.67 -144 100 0.85 -163 9.40 86 0.033 -6 0.66 -158 200 0.85 -170 4.47 73 0.026 -17 0.69 -162 300 0.87 -171 2.72 64 0.025 -28 0.74 -163 400 0.88 -172 1.85 56 0.021 -21 0.79 -164 500 0.90 -173 1.35 52 0.019 -30 0.83 -165 600 0.92 -173 1.04 47 0.014 -26 0.85 -167 700 0.93 -174 0.83 44 0.015 -39 0.88 -168 800 0.94 -175 0.68 39 0.014 -31 0.90 -169 900 0.94 -175 0.55 36 0.010 -41 0.91 -170 1000 0.96 -176 0.46 30 0.011 -38 0.95 -170 IDQ = 800 mA f MHz S11 S21 S12 S22 50 |S11| 0.90 -159 |S21| 20.80 97 |S12| 0.020 14 |S22| 0.73 -162 100 0.88 -169 10.35 88 0.018 1 0.74 -169 200 0.88 -174 5.09 79 0.017 -9 0.75 -171 300 0.89 -175 3.23 73 0.015 -18 0.77 -171 400 0.89 -175 2.30 67 0.015 -17 0.80 -171 500 0.90 -176 1.74 63 0.014 -22 0.82 -170 600 0.91 -176 1.39 59 0.014 -19 0.83 -171 700 0.92 -176 1.16 55 0.009 -23 0.85 -171 800 0.93 -176 0.96 50 0.011 -14 0.87 -172 900 0.94 -177 0.80 46 0.007 4 0.88 -173 1000 0.94 -177 0.67 41 0.010 -15 0.89 -173 IDQ = 1.5 A f MHz S11 S21 S12 S22 50 |S11| 0.91 -159 |S21| 20.18 97 |S12| 0.015 11 |S22| 0.73 -165 100 0.89 -169 10.05 89 0.016 -5 0.74 -171 200 0.88 -174 4.93 80 0.015 -3 0.75 -172 300 0.89 -175 3.14 73 0.014 -14 0.78 -172 400 0.89 -176 2.24 67 0.014 -20 0.80 -171 500 0.90 -176 1.70 64 0.014 -22 0.82 -170 600 0.92 -176 1.36 59 0.010 -16 0.84 -171 700 0.92 -176 1.13 55 0.013 -10 0.85 -171 800 0.93 -177 0.94 50 0.008 -13 0.87 -172 900 0.94 -177 0.78 46 0.013 -26 0.87 -173 1000 0.94 -178 0.65 41 0.007 8 0.87 -172 MRF1518T1 5.2-346 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA APPLICATIONS INFORMATION DESIGN CONSIDERATIONS This device is a common-source, RF power, N-Channel enhancement mode, Lateral Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). Motorola Application Note AN211A, "FETs in Theory and Practice", is suggested reading for those not familiar with the construction and characteristics of FETs. This surface mount packaged device was designed primarily for VHF and UHF portable power amplifier applications. Manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. However, care should be taken in the design process to insure proper heat sinking of the device. The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to-source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications. Drain Cgd Gate Cds Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd Cgs Source DRAIN CHARACTERISTICS One critical figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, RDS(on), occurs in the linear region of the output characteristic and is specified at a specific gate-source voltage and drain current. The drain-source voltage under these conditions is termed VDS(on). For MOSFETs, VDS(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not recommended and may result in possible damage to the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The DC input resistance is very high - on the order of 109 -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate-to-source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate-drain capacitance. If the gate-to-source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate-threshold voltage and turn the device on. DC BIAS Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. RF power FETs operate optimally with a quiescent drain current (IDQ), whose value is application dependent. This device was characterized at IDQ = 150 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF1518T1 5.2-347 MOUNTING The specified maximum thermal resistance of 2C/W assumes a majority of the 0.065 x 0.180 source contact on the back side of the package is in good contact with an appropriate heat sink. As with all RF power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. Refer to Motorola Application Note AN4005/D, "Thermal Management and Mounting Method for the PLD-1.5 RF Power Surface Mount Package," and Engineering Bulletin EB209/D, "Mounting Method for RF Power Leadless Surface Mount Transistor" for additional information. AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Motorola Application Note AN721, "Impedance Matching Networks Applied to RF Power Transistors." Large-signal MRF1518T1 5.2-348 impedances are provided, and will yield a good first pass approximation. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of this device yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region. Two-port stability analysis with this device's S-parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Motorola Application Note AN215A, "RF Small-Signal Design Using Two-Port Parameters" for a discussion of two port network theory and stability. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET The MRF1535T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 12.5 volt mobile FM equipment. * Specified Performance @ 520 MHz, 12.5 Volts Output Power -- 35 Watts Power Gain -- 10.0 dB Efficiency -- 50% * Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 520 MHz, 2 dB Overdrive * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Broadband-Full Power Across the Band: 135-175 MHz 400-470 MHz 450-520 MHz * Broadband UHF/VHF Demonstration Amplifier Information Available Upon Request * RF Power Plastic Surface Mount Package * Available in Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF1535T1 520 MHz, 35 W, 12.5 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET CASE 1264-06, STYLE 1 (TO-272) PLASTIC MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 40 Vdc Gate-Source Voltage VGS 20 Vdc Drain Current -- Continuous ID 6 Adc Total Device Dissipation @ TC = 25C (1) Derate above 25C PD 135 0.50 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 150 C Symbol Max Unit RJC 0.90 C/W Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Calculated based on the formula PD = TJ - TC RJC NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF1535T1 5.2-349 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 60 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 V) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 10 Vdc, VDS = 0 V) IGSS -- -- 0.3 Adc Gate Threshold Voltage (VDS = 12.5 Vdc, ID = 400 A) VGS(th) 1 -- 2.6 Vdc Drain-Source On-Voltage (VGS = 5 Vdc, ID = 0.6 A) RDS(on) -- -- 0.7 Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2.0 Adc) VDS(on) -- -- 1 Vdc Input Capacitance (Includes Input Matching Capacitance) (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Ciss -- -- 250 pF Output Capacitance (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Coss -- -- 150 pF Reverse Transfer Capacitance (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Crss -- -- 20 pF 10 -- -- 50 -- -- Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 Adc) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS RF CHARACTERISTICS (In Motorola Test Fixture) Common-Source Amplifier Power Gain (VDD = 12.5 Vdc, Pout = 35 Watts, IDQ = 500 mA) f = 520 MHz Gps Drain Efficiency (VDD = 12.5 Vdc, Pout = 35 Watts, IDQ = 500 mA) f = 520 MHz Load Mismatch (VDD = 15.6 Vdc, f = 520 MHz, 2 dB Input Overdrive, VSWR 20:1 at All Phase Angles) MRF1535T1 5.2-350 dB % No Degradation in Output Power Before and After Test MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA VGG + C11 C10 R4 B1 C23 R3 + C21 C22 VDD L5 C9 R2 RF INPUT N1 C1 RF OUTPUT N2 R1 Z1 C2 L1 C3 Z2 C4 B1 C1, C9, C20, C23 C2, C5 C3, C15 C4, C6, C19 C7 C8 C10, C21 C11, C22 C12, C13 C14 C16 C17 C18 L1 L2 L3 Z3 C5 L2 C6 Z4 Z5 C7 DUT Z6 Z7 C12 C8 C13 Z8 C14 L4 L5 N1, N2 R1 R2 R3 R4 Z1 Z2 Z3 Z4 Z5, Z6 Z7 Z8 Z9 Z10 Board Ferroxcube #VK200 330 pF, 100 mil Chip Capacitors 0 to 20 pF, Trimmer Capacitors 33 pF, 100 mil Chip Capacitors 18 pF, 100 mil Chip Capacitors 160 pF, 100 mil Chip Capacitor 240 pF, 100 mil Chip Capacitor 10 F, 50 V Electrolytic Capacitors 470 pF, 100 mil Chip Capacitors 150 pF, 100 mil Chip Capacitors 110 pF, 100 mil Chip Capacitor 68 pF, 100 mil Chip Capacitor 120 pF, 100 mil Chip Capacitor 51 pF, 100 mil Chip Capacitor 17.5 nH, Coilcraft #A05T 5 nH, Coilcraft #A02T 1 Turn, #26 AWG, 0.250 ID C15 Z9 L3 L4 C16 C17 C18 Z10 C20 C19 1 Turn, #26 AWG, 0.240 ID 4 Turn, #24 AWG, 0.180 ID Type N Flange Mounts 6.5 , 1/4 W Chip Resistor 39 , Chip Resistor (0805) 1.2 k, 1/8 W Chip Resistor 33 k, 1/4 W Chip Resistor 0.970 x 0.080 Microstrip 0.380 x 0.080 Microstrip 0.190 x 0.080 Microstrip 0.160 x 0.080 Microstrip 0.110 x 0.200 Microstrip 0.490 x 0.080 Microstrip 0.250 x 0.080 Microstrip 0.320 x 0.080 Microstrip 0.240 x 0.080 Microstrip Glass Teflon, 31 mils Figure 1. 135 - 175 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 135 - 175 MHz 0 155 MHz 135 MHz 175 MHz 50 40 IRL, INPUT RETURN LOSS (dB) Pout , OUTPUT POWER (WATTS) 60 30 20 10 -5 155 MHz 135 MHz 175 MHz -10 -15 VDD = 12.5 Vdc VDD = 12.5 Vdc 0 -20 0 1 2 3 4 10 Pin, INPUT POWER (WATTS) Figure 2. Output Power versus Input Power 20 30 40 50 60 Pout, OUTPUT POWER (WATTS) Figure 3. Input Return Loss versus Output Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF1535T1 5.2-351 TYPICAL CHARACTERISTICS, 135 - 175 MHz 80 19 VDD = 12.5 Vdc 18 155 MHz h, DRAIN EFFICIENCY (%) GAIN (dB) 17 16 15 14 13 155 MHz 12 10 20 30 60 175 MHz 50 40 135 MHz 40 30 50 10 60 20 30 Pout, OUTPUT POWER (WATTS) 40 50 60 80 Figure 5. Drain Efficiency versus Output Power 80 45 h, DRAIN EFFICIENCY (%) 50 155 MHz 175 MHz 40 135 MHz 35 155 MHz 70 175 MHz 60 135 MHz 50 VDD = 12.5 Vdc Pin = 30 dBm VDD = 12.5 Vdc Pin = 30 dBm 30 40 200 400 600 800 1000 1200 200 400 IDQ, BIASING CURRENT (mA) 600 800 1000 1200 IDQ, BIASING CURRENT (mA) Figure 6. Output Power versus Biasing Current Figure 7. Drain Efficiency versus Biasing Current 70 80 60 50 h, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 70 Pout, OUTPUT POWER (WATTS) Figure 4. Gain versus Output Power Pout , OUTPUT POWER (WATTS) 135 MHz VDD = 12.5 Vdc 175 MHz 11 70 155 MHz 175 MHz 135 MHz 40 30 135 MHz 70 175 MHz 60 155 MHz 50 20 IDQ = 250 mA Pin = 30 dBm IDQ = 250 mA Pin = 30 dBm 10 10 11 12 13 40 14 15 VDD, SUPPLY VOLTAGE (VOLTS) 11 12 13 14 15 VDD, SUPPLY VOLTAGE (VOLTS) Figure 8. Output Power versus Supply Voltage MRF1535T1 5.2-352 10 Figure 9. Drain Efficiency versus Supply Voltage MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA B1 VGG VDD C14 C13 + C12 C11 R3 R2 C24 C23 L1 C22 + C21 C10 R1 DUT RF INPUT N1 C1 Z1 C2 B1 C1 C2, C3 C4 C5 C6, C7 C8, C15, C16 C9 C10, C14, C24 C11, C21 C12, C22 C13, C23 C17, C18 C19 C20 Z2 C3 Z3 C4 Z4 Z5 C6 C5 C7 Z6 C8 Z7 C15 C9 C21 L1 N1, N2 R1 R2 R3 Z1 Z2 Z3 Z4 Z5, Z8 Z6, Z7 Z9 Z10 Board Short Ferrite Bead, Fair Rite #2743021446 160 pF, 100 mil Chip Capacitor 3.6 pF, 100 mil Chip Capacitors 2.2 pF, 100 mil Chip Capacitor 10 pF, 100 mil Chip Capacitor 16 pF, 100 mil Chip Capacitors 27 pF, 100 mil Chip Capacitors 43 pF, 100 mil Chip Capacitor 160 pF, 100 mil Chip Capacitors 10 F, 50 V Electrolytic Capacitors 1,200 pF, 100 mil Chip Capacitors 0.1 F, 100 mil Chip Capacitors 24 pF, 100 mil Chip Capacitors 160 pF, 100 mil Chip Capacitor 8.2 pF, 100 mil Chip Capacitor Z9 Z8 C17 C16 C18 C19 N2 Z10 C19 RF OUTPUT C20 4.8 pF, 100 mil Chip Capacitor 47.5 nH, 5 Turn, Coilcraft Type N Flange Mount 500 , Chip Resistor (0805) 1 k, Chip Resistor (0805) 33 k, 1/8 W Chip Resistor 0.480 x 0.080 Microstrip 1.070 x 0.080 Microstrip 0.290 x 0.080 Microstrip 0.160 x 0.080 Microstrip 0.120 x 0.080 Microstrip 0.120 x 0.223 Microstrip 1.380 x 0.080 Microstrip 0.625 x 0.080 Microstrip Glass Teflon, 31 mils Figure 10. 450 - 520 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS, 450 - 520 MHz 60 0 IRL, INPUT RETURN LOSS (dB) Pout , OUTPUT POWER (WATTS) 450 MHz 50 500 MHz 40 470 MHz 520 MHz 30 20 10 VDD = 12.5 Vdc -5 450 MHz -10 470 MHz 520 MHz 500 MHz VDD = 12.5 Vdc 0 -15 0 1 2 3 4 5 6 0 10 20 30 40 50 60 Pin, INPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Figure 11. Output Power versus Input Power Figure 12. Input Return Loss versus Output Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF1535T1 5.2-353 TYPICAL CHARACTERISTICS, 450 - 520 MHz 70 15 520 MHz VDD = 12.5 Vdc 470 MHz GAIN (dB) 13 h, DRAIN EFFICIENCY (%) 14 450 MHz 12 11 60 50 40 VDD = 12.5 Vdc 500 MHz 520 MHz 20 9 10 0 20 30 40 50 0 60 10 20 Pout, OUTPUT POWER (WATTS) 30 40 50 60 Pout, OUTPUT POWER (WATTS) Figure 13. Gain versus Output Power Figure 14. Drain Efficiency versus Output Power 50 80 450 MHz 45 h, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 450 MHz 470 MHz 30 10 470 MHz 500 MHz 40 520 MHz 35 70 500 MHz 520 MHz 60 450 MHz 470 MHz 50 VDD = 12.5 Vdc Pin = 34 dBm VDD = 12.5 Vdc Pin = 34 dBm 30 40 200 400 600 800 1000 1200 200 400 IDQ, BIASING CURRENT (mA) 600 800 1000 1200 IDQ, BIASING CURRENT (mA) Figure 15. Output Power versus Biasing Current Figure 16. Drain Efficiency versus Biasing Current 80 70 60 h, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 500 MHz 50 450 MHz 40 470 MHz 30 520 MHz 500 MHz 70 520 MHz 60 450 MHz 470 MHz 500 MHz 50 IDQ = 250 mA Pin = 34 dBm 20 IDQ = 250 mA Pin = 34 dBm 10 40 10 11 12 13 14 15 VDD, SUPPLY VOLTAGE (VOLTS) 11 12 13 14 15 VDD, SUPPLY VOLTAGE (VOLTS) Figure 17. Output Power versus Supply Voltage MRF1535T1 5.2-354 10 Figure 18. Drain Efficiency versus Supply Voltage MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Zo = 10 Zin ZOL* f = 175 MHz f = 135 MHz f = 175 MHz f = 135 MHz f = 520 MHz ZOL* f = 450 MHz f = 450 MHz f = 520 MHz Zin VDD = 12.5 V, IDQ = 250 mA, Pout = 35 W Zin VDD = 12.5 V, IDQ = 500 mA, Pout = 35 W f MHz Zin ZOL* f MHz Zin ZOL* 135 5.0 + j0.9 1.7 + j0.2 450 0.8 - j1.4 1.0 - j0.8 155 5.0 + j0.9 1.7 + j0.2 470 0.9 - j1.4 1.1 - j0.6 175 3.0 + j1.0 1.3 + j0.1 500 1.0 - j1.4 1.1 - j0.6 520 0.9 - j1.4 1.1 - j0.5 Zin = Complex conjugate of source impedance with parallel 6.5 resistor and 240 pF capacitor in series with gate. ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. = Complex conjugate of source impedance with parallel 6.5 resistor and 240 pF capacitor in series with gate. ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability. Input Matching Network Output Matching Network Device Under Test Z in Z * OL Figure 19. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF1535T1 5.2-355 Table 1. Common Source Scattering Parameters (VDD = 12.5 Vdc) IDQ = 250 mA S11 f MHz |S11| 50 0.89 100 S21 S12 S22 |S21| |S12| |S22| -173 8.496 83 0.014 -26 0.76 -170 0.90 -175 3.936 72 0.014 -14 0.79 -170 150 0.91 -175 2.429 63 0.011 -23 0.82 -170 200 0.92 -175 1.627 57 0.010 -44 0.86 -170 250 0.94 -176 1.186 53 0.007 -16 0.88 -170 300 0.95 -176 0.888 49 0.005 -44 0.91 -171 350 0.96 -176 0.686 48 0.005 36 0.92 -170 400 0.96 -176 0.568 44 0.005 -1 0.94 -171 450 0.97 -176 0.457 44 0.004 49 0.94 -172 500 0.97 -176 0.394 44 0.003 -51 0.95 -171 550 0.98 -176 0.332 42 0.001 31 0.95 -173 600 0.98 -177 0.286 41 0.013 99 0.94 -173 IDQ = 1.0 A S11 f MHz |S11| 50 0.90 100 S21 S12 S22 |S21| |S12| |S22| -173 8.49 83 0.006 -39 0.86 -176 0.90 -175 3.92 72 0.009 -5 0.86 -176 150 0.91 -175 2.44 63 0.006 7 0.87 -176 200 0.92 -175 1.62 57 0.008 21 0.88 -175 250 0.94 -176 1.19 53 0.006 8 0.89 -174 300 0.95 -176 0.89 48 0.008 3 0.89 -174 350 0.96 -176 0.69 48 0.007 48 0.91 -174 400 0.96 -176 0.57 44 0.004 41 0.93 -173 450 0.97 -176 0.46 44 0.004 43 0.93 -173 500 0.97 -176 0.39 44 0.003 57 0.94 -173 550 0.98 -176 0.33 41 0.006 62 0.94 -174 600 0.98 -177 0.28 41 0.009 96 0.93 -173 IDQ = 2.0 A S11 f MHz |S11| 50 0.94 100 S21 S22 |S21| |S12| |S22| -176 9.42 88 0.005 -72 0.89 -177 0.94 -178 4.56 82 0.005 4 0.89 -177 150 0.94 -178 2.99 78 0.003 7 0.89 -177 200 0.94 -178 2.14 74 0.005 17 0.90 -176 250 0.95 -178 1.67 71 0.004 40 0.90 -175 300 0.95 -178 1.32 67 0.007 35 0.91 -175 350 0.95 -178 1.08 67 0.005 57 0.92 -174 400 0.96 -178 0.93 63 0.003 50 0.93 -173 450 0.96 -178 0.78 62 0.007 68 0.93 -173 500 0.96 -177 0.68 61 0.004 99 0.94 -173 550 0.97 -177 0.59 58 0.008 78 0.93 -175 600 0.97 -178 0.51 57 0.009 92 0.92 -174 MRF1535T1 5.2-356 S12 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA APPLICATIONS INFORMATION DESIGN CONSIDERATIONS This device is a common-source, RF power, N-Channel enhancement mode, Lateral Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). Motorola Application Note AN211A, "FETs in Theory and Practice", is suggested reading for those not familiar with the construction and characteristics of FETs. This surface mount packaged device was designed primarily for VHF and UHF portable power amplifier applications. Manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. However, care should be taken in the design process to insure proper heat sinking of the device. The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to-source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications. Drain Cgd Gate Cds Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd Cgs Source DRAIN CHARACTERISTICS One critical figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, RDS(on), occurs in the linear region of the output characteristic and is specified at a specific gate-source voltage and drain current. The drain-source voltage under these conditions is termed VDS(on). For MOSFETs, VDS(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not recommended and may result in possible damage to the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The DC input resistance is very high - on the order of 109 -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate-to-source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate-drain capacitance. If the gate-to-source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate-threshold voltage and turn the device on. DC BIAS Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. RF power FETs operate optimally with a quiescent drain current (IDQ), whose value is application dependent. This device was characterized at IDQ = 150 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF1535T1 5.2-357 MOUNTING The specified maximum thermal resistance of 2C/W assumes a majority of the 0.065 x 0.180 source contact on the back side of the package is in good contact with an appropriate heat sink. As with all RF power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. Refer to Motorola Application Note AN4005/D, "Thermal Management and Mounting Method for the PLD-1.5 RF Power Surface Mount Package," and Engineering Bulletin EB209/D, "Mounting Method for RF Power Leadless Surface Mount Transistor" for additional information. AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Motorola Application Note AN721, "Impedance Matching Networks Applied to RF Power Transistors." Large-signal MRF1535T1 5.2-358 impedances are provided, and will yield a good first pass approximation. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of this device yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region. Two-port stability analysis with this device's S-parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Motorola Application Note AN215A, "RF Small-Signal Design Using Two-Port Parameters" for a discussion of two port network theory and stability. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET The MRF1550T1 is designed for broadband commercial and industrial applications at frequencies to 175 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 12.5 volt mobile FM equipment. * Specified Performance @ 175 MHz, 12.5 Volts Output Power -- 50 Watts Power Gain -- 12 dB Efficiency -- 50% * Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 175 MHz, 2 dB Overdrive * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * RF Power Plastic Surface Mount Package * Broadband-Full Power Across the Band: 135-175 MHz * Broadband Demonstration Amplifier Information Available Upon Request * Available in Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF1550T1 175 MHz, 50 W, 12.5 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET CASE 1264-06, STYLE 1 (TO-272) PLASTIC MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 40 Vdc Gate-Source Voltage VGS 20 Vdc Drain Current -- Continuous ID 12 Adc Total Device Dissipation @ TC = 25C (1) Derate above 25C PD 165 0.50 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 150 C Symbol Max Unit RJC 0.75 C/W Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Calculated based on the formula PD = TJ - TC RJC NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF1550T1 5.2-359 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 V) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 10 Vdc, VDS = 0 V) IGSS -- -- 0.5 Adc Gate Threshold Voltage (VDS = 12.5 Vdc, ID = 800 A) VGS(th) 1 -- 3 Vdc Drain-Source On-Voltage (VGS = 5 Vdc, ID = 1.2 A) RDS(on) -- -- 0.5 Drain-Source On-Voltage (VGS = 10 Vdc, ID = 4.0 Adc) VDS(on) -- -- 1 Vdc Input Capacitance (Includes Input Matching Capacitance) (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Ciss -- -- 500 pF Output Capacitance (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Coss -- -- 250 pF Reverse Transfer Capacitance (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Crss -- -- 35 pF 10 -- -- 50 -- -- Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS RF CHARACTERISTICS (In Motorola Test Fixture) Common-Source Amplifier Power Gain (VDD = 12.5 Vdc, Pout = 50 Watts, IDQ = 500 mA) f = 175 MHz Gps Drain Efficiency (VDD = 12.5 Vdc, Pout = 50 Watts, IDQ = 500 mA) f = 175 MHz Load Mismatch (VDD = 15.6 Vdc, f = 175 MHz, 2 dB Input Overdrive, VSWR 20:1 at All Phase Angles) MRF1550T1 5.2-360 dB % No Degradation in Output Power Before and After Test MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA VGG C10 C9 + C8 R4 C20 C21 R3 C19 C18 Z9 L4 C13 C14 VDD + L5 C7 R2 Z6 R1 N1 RF INPUT Z1 L1 Z2 Z3 L2 Z4 Z5 C2 C3 B1 C1 C2 C3 C4, C16 C5 C6 C7, C17 C8, C18 C9, C19 C10 C11, C12 C13 C14 C15 C20 L1 L2 L3 C4 Z8 C11 C12 L3 Z10 Z11 C17 N2 RF OUTPUT DUT C6 C1 Z7 C15 C16 C5 L4 L5 N1, N2 R1 R2 R3 R4 Z1 Z2 Z3 Z4 Z5, Z6 Z7 Z8 Z9 Z10 Z11 Board Ferroxcube #VK200 180 pF, 100 mil Chip Capacitor 10 pF, 100 mil Chip Capacitor 33 pF, 100 mil Chip Capacitor 24 pF, 100 mil Chip Capacitors 160 pF, 100 mil Chip Capacitor 240 pF, 100 mil Chip Capacitor 300 pF, 100 mil Chip Capacitors 10 F, 50 V Electrolytic Capacitors 0.1 F, 100 mil Chip Capacitors 470 pF, 100 mil Chip Capacitor 200 pF, 100 mil Chip Capacitors 22 pF, 100 mil Chip Capacitor 30 pF, 100 mil Chip Capacitor 6.8 pF, 100 mil Chip Capacitor 1,000 pF, 100 mil Chip Capacitor 18.5 nH, Coilcraft #A05T 5 nH, Coilcraft #A02T 1 Turn, #24 AWG, 0.250 ID 1 Turn, #26 AWG, 0.240 ID 3 Turn, #24 AWG, 0.180 ID Type N Flange Mount 5.1 , 1/4 W Chip Resistor 39 , Chip Resistor (0805) 1 k, 1/8 W Chip Resistor 33 k, 1/4 W Chip Resistor 1.000 x 0.080 Microstrip 0.400 x 0.080 Microstrip 0.200 x 0.080 Microstrip 0.200 x 0.080 Microstrip 0.100 x 0.223 Microstrip 0.160 x 0.080 Microstrip 0.260 x 0.080 Microstrip 0.280 x 0.080 Microstrip 0.270 x 0.080 Microstrip 0.730 x 0.080 Microstrip Glass Teflon, 31 mils Figure 1. 135 - 175 MHz Broadband Test Circuit TYPICAL CHARACTERISTICS 0 80 135 MHz VDD = 12.5 V IRL, INPUT RETURN LOSS (dB) Pout , OUTPUT POWER (WATTS) 70 60 175 MHz 50 155 MHz 40 30 20 10 0 -5 175 MHz -10 135 MHz -15 155 MHz VDD = 12.5 V 0 1.0 3.0 2.0 4.0 Pin, INPUT POWER (WATTS) 5.0 6.0 -20 10 Figure 2. Output Power versus Input Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 20 30 40 50 60 Pout, OUTPUT POWER (WATTS) 70 80 Figure 3. Input Return Loss versus Output Power MRF1550T1 5.2-361 TYPICAL CHARACTERISTICS 16 80 175 MHz h, DRAIN EFFICIENCY (%) 15 GAIN (dB) 14 135 MHz 155 MHz 13 12 11 70 155 MHz 60 175 MHz 135 MHz 50 40 VDD = 12.5 V 10 10 20 30 40 50 60 Pout, OUTPUT POWER (WATTS) VDD = 12.5 V 70 30 10 80 Figure 4. Gain versus Output Power 70 80 80 155 MHz 135 MHz h, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 40 50 60 30 Pout, OUTPUT POWER (WATTS) Figure 5. Drain Efficiency versus Output Power 70 65 175 MHz 60 155 MHz 55 175 MHz 70 135 MHz 60 50 VDD = 12.5 V Pin = 35 dBm VDD = 12.5 V Pin = 35 dBm 50 200 400 800 600 IDQ, BIASING CURRENT (mA) 1000 40 200 1200 Figure 6. Output Power versus Biasing Current 400 600 800 IDQ, BIASING CURRENT (mA) 1000 1200 Figure 7. Drain Efficiency versus Biasing Current 90 80 155 MHz 80 h, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 20 70 155 MHz 135 MHz 60 175 MHz 50 70 175 MHz 135 MHz 60 50 IDQ = 500 mA Pin = 35 dBm 40 30 10 11 12 13 IDQ = 500 mA Pin = 35 dBm 14 15 VDD, SUPPLY VOLTAGE (VOLTS) 11 12 13 14 15 VDD, SUPPLY VOLTAGE (VOLTS) Figure 8. Output Power versus Supply Voltage MRF1550T1 5.2-362 40 10 Figure 9. Drain Efficiency versus Supply Voltage MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Zo = 10 f = 175 MHz f = 175 MHz ZIN ZOUT f = 135 MHz f = 135 MHz VDD = 12.5 V, IDQ = 500 mA, Pout = 50 W Zin f MHz Zin ZOL* 135 4.1 + j0.5 1.0 + j0.6 155 4.2 + j1.7 1.2 + j.09 175 3.7 + j2.3 0.7 + j1.1 = Complex conjugate of source impedance with parallel 5.1 resistor and 240 pF capacitor in series with gate. ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and D > 50 %. Input Matching Network Output Matching Network Device Under Test Z in Z * OL Figure 10. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF1550T1 5.2-363 Table 1. Common Source Scattering Parameters (VDD = 12.5 Vdc) IDQ = 500 mA S11 f MHz |S11| 50 0.93 100 S21 S12 S22 |S21| |S12| |S22| -178 4.817 80 0.009 -39 0.86 -176 0.94 -178 2.212 69 0.009 -3 0.88 -175 150 0.95 -178 1.349 61 0.008 -8 0.90 -174 200 0.95 -178 0.892 54 0.006 -13 0.92 -174 250 0.96 -178 0.648 51 0.005 -7 0.93 -174 300 0.97 -178 0.481 47 0.004 -8 0.95 -174 350 0.97 -178 0.370 46 0.005 4 0.95 -174 400 0.98 -178 0.304 43 0.001 15 0.97 -174 450 0.98 -178 0.245 43 0.005 81 0.97 -174 500 0.98 -178 0.209 43 0.003 84 0.97 -174 550 0.99 -177 0.178 41 0.007 70 0.98 -175 600 0.98 -178 0.149 41 0.010 106 0.96 -175 IDQ = 2.0 mA S11 f MHz |S11| 50 0.93 100 S21 S12 S22 |S21| |S12| |S22| -177 4.81 80 0.003 -119 0.93 -178 0.94 -178 2.20 69 0.006 4 0.93 -178 150 0.95 -178 1.35 61 0.003 -1 0.93 -177 200 0.95 -178 0.89 54 0.004 18 0.93 -176 250 0.96 -178 0.65 51 0.001 28 0.94 -176 300 0.97 -178 0.48 47 0.004 77 0.94 -175 350 0.97 -178 0.37 46 0.006 85 0.95 -175 400 0.98 -178 0.30 43 0.007 53 0.96 -174 450 0.98 -178 0.25 43 0.006 74 0.97 -174 500 0.98 -177 0.21 44 0.006 84 0.97 -174 550 0.99 -177 0.18 41 0.002 106 0.97 -175 600 0.98 -178 0.15 41 0.004 116 0.96 -174 IDQ = 4.0 mA S11 f MHz |S11| 50 0.97 100 S21 S22 |S21| |S12| |S22| -179 5.04 87 0.002 -116 0.94 -179 0.96 -179 2.43 82 0.006 42 0.94 -178 150 0.96 -179 1.60 77 0.004 13 0.94 -177 200 0.96 -179 1.14 74 0.003 43 0.95 -176 250 0.97 -179 0.89 71 0.004 65 0.95 -175 300 0.97 -179 0.71 68 0.006 68 0.95 -175 350 0.97 -179 0.57 67 0.006 74 0.97 -174 MRF1550T1 5.2-364 S12 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Table 1. Common Source Scattering Parameters (VDD = 12.5 Vdc) (continued) IDQ = 4.0 mA (continued) S11 f MHz |S11| 400 0.97 450 S21 S12 S22 |S21| |S12| |S22| -179 0.49 63 0.005 58 0.97 -173 0.98 -178 0.41 63 0.005 73 0.98 -173 500 0.98 -178 0.36 62 0.003 128 0.98 -173 550 0.98 -178 0.32 58 0.004 57 0.99 -174 600 0.98 -178 0.27 58 0.009 83 0.98 -174 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF1550T1 5.2-365 APPLICATIONS INFORMATION DESIGN CONSIDERATIONS This device is a common-source, RF power, N-Channel enhancement mode, Lateral Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). Motorola Application Note AN211A, "FETs in Theory and Practice", is suggested reading for those not familiar with the construction and characteristics of FETs. This surface mount packaged device was designed primarily for VHF and UHF portable power amplifier applications. Manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. However, care should be taken in the design process to insure proper heat sinking of the device. The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate-to-drain (Cgd), and gate-to-source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain-to-source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter-terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications. Drain Cgd Gate Cds Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd Cgs Source DRAIN CHARACTERISTICS One critical figure of merit for a FET is its static resistance in the full-on condition. This on-resistance, RDS(on), occurs in the linear region of the output characteristic and is specified at a specific gate-source voltage and drain current. The MRF1550T1 5.2-366 drain-source voltage under these conditions is termed VDS(on). For MOSFETs, VDS(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not recommended and may result in possible damage to the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The DC input resistance is very high - on the order of 109 -- resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate-to-source threshold voltage, VGS(th). Gate Voltage Rating -- Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination -- The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the devices due to voltage build-up on the input capacitor due to leakage currents or pickup. Gate Protection -- These devices do not have an internal monolithic zener diode from gate-to-source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate-to-source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate-drain capacitance. If the gate-to-source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate-threshold voltage and turn the device on. DC BIAS Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. RF power FETs operate optimally with a quiescent drain current (IDQ), whose value is application dependent. This device was characterized at IDQ = 150 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOUNTING The specified maximum thermal resistance of 2C/W assumes a majority of the 0.065 x 0.180 source contact on the back side of the package is in good contact with an appropriate heat sink. As with all RF power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. Refer to Motorola Application Note AN4005/D, "Thermal Management and Mounting Method for the PLD-1.5 RF Power Surface Mount Package," and Engineering Bulletin EB209/D, "Mounting Method for RF Power Leadless Surface Mount Transistor" for additional information. AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Motorola Application Note AN721, "Impedance Matching Networks Applied to RF Power Transistors." Large-signal impedances are provided, and will yield a good first pass approximation. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of this device yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region. Two-port stability analysis with this device's S-parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Motorola Application Note AN215A, "RF Small-Signal Design Using Two-Port Parameters" for a discussion of two port network theory and stability. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF1550T1 5.2-367 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6404 NPN Silicon RF Power Transistor The MRF6404 is designed for 26 volts microwave large signal, common emitter, class AB linear amplifier applications operating in the range 1.8 to 2.0 GHz. * Specified 26 Volts, 1.88 GHz Characteristics Output Power -- 30 Watts Gain -- 7.5 dB Min @ 30 Watts Efficiency -- 38% Min @ 30 Watts * Characterized with Series Equivalent Large-Signal Parameters from 1.8 to 2.0 GHz * To be used in Class AB for DCS1800 and PCS1900/Cellular Radio * Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration 30 W, 1.88 GHz RF POWER TRANSISTOR NPN SILICON CASE 395C-01, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit VCEO 24 Vdc Collector-Emitter Voltage VCES 60 Vdc Emitter-Base Voltage VEBO 4 Vdc Collector-Current -- Continuous IC 10 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 125 0.71 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Symbol Max Unit RJC 1.4 C/W Collector-Emitter Voltage Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 50 mA, IB = 0) V(BR)CEO 24 29 -- Vdc Emitter-Base Breakdown Voltage (IE = 10 mAdc) V(BR)EBO 4 5 -- Vdc Collector-Base Breakdown Voltage (IC = 50 mAdc) V(BR)CES 60 68 -- Vdc Collector-Base Breakdown Voltage (IC = 50 mAdc, RBE = 75 ) V(BR)CER 40 56 -- Vdc ICES -- -- 10 mA hFE 20 50 120 -- OFF CHARACTERISTICS Collector Cutoff Current (VCE = 30 V, VBE = 0) ON CHARACTERISTICS DC Current Gain (IC = 1 Adc, VCE = 5 Vdc) (1) Thermal resistance is determined under specified RF operating condition. REV 3 MRF6404 5.2-368 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit Cob 30 38 -- pF Common-Emitter Amplifier Power Gain (VCC = 26 V, Pout = 30 W, ICQ = 150 mA, f = 1.88 GHz) Gpe 7.5 8.5 -- dB Common-Emitter Amplifier Power Gain (VCC = 26 V, Pout = 28 W, ICQ = 150 mA) (f = 1.99 GHz) Gpe 7 8 -- dB 38 35 43 40 -- -- 30 28 35 33 -- -- Characteristic DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 26 V, IE = 0, f = 1 MHz) For information only. This part is collector matched. FUNCTIONAL TESTS Collector Efficiency (VCC = 26 V, Pout = 30 W, f = 1.88 GHz) (VCC = 26 V, Pout = 28 W, f = 1.99 GHz) Output Power at 1 dBc (VCC = 26 V, f = 1.88 GHz) (VCC = 26 V, f = 1.99 GHz) Output Mismatch Stress: VSWR = 3:1 (all phase angles) (VCC = 26 Vdc, Pout = 25 W, ICQ = 150 mA, f = 1.88 GHz) % P1dBc Watts No Degradation in Output Power DCS EVALUATION f = 1.8 GHz Zin 1.9 GHz 1.9 GHz Zo = 20 ZOL* f = 1.8 GHz f (GHz) Zin () ZOL* () 1.8 4.3 + j6.1 2.7 - j1.0 1.85 4.6 + j5.3 2.9 + j0.3 1.9 4.8 + j5.0 3.0 + j1.2 ZOL*: Conjugate of optimum load impedance into which the device operates at a given output power, voltage, current and frequency. Figure 1. Input and Output Impedances with Circuit Tuned for Maximum Gain @ VCC = 26 V, ICQ = 150 mA, Pout = 30 W MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF6404 5.2-369 TYPICAL CHARACTERISTICS 40 VCC = 26 V ICQ = 150 mA 35 f = 1.7 GHz Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 40 1.9 GHz 30 1.8 GHz 25 20 15 10 5 35 Pin = 5 W 30 25 15 10 1W 5 0 1.70 0 1 0 2 3 4 Pin, INPUT POWER (WATTS) 5 6 Figure 2. Output Power versus Input Power 1.75 1.80 f, FREQUENCY (GHz) 1.85 1.90 Figure 3. Output Power versus Frequency - 25 12 3rd Order - 30 VCC = 26 V ICQ = 150 mA f = 1.88 GHz 9 6 - 35 - 40 PHASE (DEGREE) IMD, INTERMODULATION DISTORTION (dBc) 3W VCC = 26 V ICQ = 150 mA 20 5th - 45 7th - 50 VCC = 26 V ICQ= 150 mA f = 1.88 & 1.8801 GHz - 55 3 0 -3 -6 - 60 -9 10 30 20 Pout, OUTPUT POWER (WATTS) PEP 0 40 4 8 12 16 20 24 28 32 36 40 Pout, OUTPUT POWER (WATTS) Figure 4. Intermodulation versus Output Power MRF6404 5.2-370 0 Figure 5. AM/PM Conversion MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA T2 C11 VBB VCC + R2 R3 + R4 T1 P1 L1 C10 C13 C12 C9 C7 C5 R1 BASE BIAS CIRCUIT C4 Z 4, 4 Z 11,11 C8 C20 Z1,1 RF INPUT C2 Z5,5 C1 Z2,2 Z6,6 Z7,7 Z8,8 Z10,10 TRF1 Z12,12 RF OUTPUT B RF CIRCUIT CT2 C21 CT3 Base Bias Circuit Decoupling Base Bias Circuit C12, C13 P1 R3 R4 T1,T2 15 nF, Chip Capacitor, Vitramon (0805 A153 JXB) 1 K, Trimmer 47 , Chip Resistor, 0805 330 , Chip Resistor, 0805 Motorola MJD 31C C4 C5, C9 C7, C11 C8 C10 R1 R2 68 pF, Chip Capacitor, ATC 100A 1.3 pF, Chip Capacitor, ATC 100A Trimmer Capacitor, Gigatrim, Ref 37281 Trimmer Capacitor, Gigatrim, Ref 37291 MRF6404 All Electrical Lengths Are Referenced from g @ f = 1.9 GHz Z1 : 50 1 : 10 Z2 : 50 2 : 74.5 B : 16.5 Z4 : 74 4 : 68 Z5 : 12.8 5 : 21 Z6 : 10.4 6 : 49.5 Z7 : 18 7 : 36.5 Z8 : 45 8 : 20 Z10 : 50 10 : 10 Z11 : 74 11 : 74.5 Z12 : 50 12 : 10 68 pF, Chip Capacitor, ATC 100A 330 pF, Chip Capacitor, Vitramon (0805 A331 JXB) 4.7 F, 63 V, Electrolytic Capacitor 68 pF, Chip Capacitor, ATC 100A 15 nF, Chip Capacitor, Vitramon (0805 A153 JXB) 1.5 , Chip Resistor, 0805 56 , Chip Resistor, 1206 RF Circuit C1, C2 C20, C21 CT2 CT3 TRF1 PC Board Material: r = 2.55, H = 0.508 mm, T = 0.035 mm Figure 6. 1.80 - 1.88 GHz Test Circuit Electrical Schematic and Components List MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF6404 5.2-371 (Not to Scale) Teflon Glass 0.5 mm - Double Side 35 m Cu. Figure 7. 1.80 - 1.88 GHz PCN Test Circuit Photomaster VBB +VCC C12 C13 T1 C11 A A A C7 L1 T2 R3 P1 R4 C10 R1 C8 R2 C9 A A A C20 C1 CT2 C21 M RF INPUT C5 C4 A A RF OUTPUT C2 CT3 Figure 8. 1.80 - 1.88 GHz PCN Test Circuit Components Layout MRF6404 5.2-372 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA PCS EVALUATION 2.0 GHz f (GHz) Zin () ZOL* () 1.90 4.9 + j3.0 3.2 + j0.5 1.93 5.4 + j2.5 3.3 + j1.2 1.97 5.6 + j1.4 3.4 + j1.5 2.00 5.4 - j0.2 3.6 + j2.5 f = 1.9 GHz ZOL* Zin Zo = 20 f = 1.9 GHz 2.0 GHz ZOL*: Conjugate of optimum load impedance into which the device operates at a given output power, voltage, current and frequency. Figure 9. Input and Output Impedances with Circuit Tuned for Maximum Gain @ VCC = 26 V, ICQ = 150 mA, Pout = 28 W MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF6404 5.2-373 TYPICAL CHARACTERISTICS 40 35 Pout , OUTPUT POWER (WATTS) f = 1.9 GHz 30 2 GHz 25 20 15 10 VCC = 26 V ICQ = 150 mA 5 3 4 2 Pin, INPUT POWER (WATTS) 25 3W 20 VCC = 26 V ICQ = 150 mA 15 1W 10 5 0 1.90 6 Figure 10. Output Power versus Input Power 1.925 1.95 f, FREQUENCY (GHz) 1.975 2.00 Figure 11. Output Power versus Frequency 40 40 35 30 25 50 20 45 15 40 VCC = 26 V ICQ = 150 mA 10 35 5 , EFFICIENCY (%) f = 2 GHz Pout , OUTPUT POWER (WATTS) 35 Pout , OUTPUT POWER (WATTS) Pin = 5 W 30 5 0 1 35 f = 1.93 GHz 30 25 , EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 40 50 20 45 15 40 VCC = 26 V ICQ = 150 mA 10 35 5 0 1 2 3 4 5 6 0 1 2 Pin, INPUT POWER (WATTS) 3 4 5 6 Pin, INPUT POWER (WATTS) Figure 12. Output Power and Efficiency versus Input Power Figure 13. Output Power and Efficiency versus Input Power Pout , OUTPUT POWER (WATTS) 40 35 Pin = 5 W 30 25 3W 20 15 VCC = 26 V ICQ = 150 mA 1W 10 5 0 1.90 1.925 1.95 f, FREQUENCY (GHz) 1.975 2.00 Figure 14. Output Power versus Frequency MRF6404 5.2-374 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA T2 C11 VBB VCC + R2 R3 T1 C10 P1 C12 C9 + R4 C7 L1 C13 C5 R1 BASE BIAS CIRCUIT C4 Z 4, 4 Z 11, 11 C8 Z1,1 RF INPUT C2 Z5,5 C1 Z2,2 Z6,6 Z7,7 Z8,8 Z10,10 TRF1 Z12,12 RF OUTPUT B RF CIRCUIT CT1 CT2 Base Bias Circuit Decoupling Base Bias Circuit C12, C13 P1 R3 R4 T1,T2 15 nF, Chip Capacitor, Vitramon (0805 A153 JXB) 1 K, Trimmer 47 , Chip Resistor, 0805 330 , Chip Resistor, 0805 Motorola MJD 31C C4 C5, C9 C7, C11 C8 C10 R1 R2 68 pF, Chip Capacitor, ATC 100A 1.3 pF, Chip Capacitor, ATC 100A Trimmer Capacitor, Gigatrim, Ref 37271 MRF6404 All Electrical Lengths Are Referenced from g @ f = 1.9 GHz Z1 : 50 1 : 10 Z2 : 50 2 : 74.5 B : 16.5 Z4 : 74 4 : 68 Z5 : 12.8 5 : 21 Z6 : 10.4 6 : 49.5 Z7 : 18 7 : 36.5 Z8 : 45 8 : 20 Z10 : 50 10 : 10 Z11 : 74 11 : 60 Z12 : 50 12 : 10 68 pF, Chip Capacitor, ATC 100A 330 pF, Chip Capacitor, Vitramon (0805 A331 JXB) 4.7 F, 63 V, Electrolytic Capacitor 68 pF, Chip Capacitor, ATC 100A 15 nF, Chip Capacitor, Vitramon (0805 A153 JXB) 1.2 , Chip Resistor, 0805 56 , Chip Resistor, 1206 RF Circuit C1, C2 C20, C21 CT1, CT2 TRF1 PC Board Material: r = 2.55, H = 0.508 mm, T = 0.035 mm Figure 15. 1.9 - 2.0 GHz Test Circuit Electrical Schematic and Components List MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF6404 5.2-375 (Not to Scale) Teflon Glass 0.5 mm - Double Side 35 m Cu. Figure 16. 1.9 - 2.0 GHz Test Circuit Photomaster VBB +VCC C12 C13 T1 A A C7 + L1 T2 R3 P1 R4 C10 R1 C8 R2 C9 C1 CT1 C4 A M RF INPUT C5 RF OUTPUT C2 CT2 Figure 17. 1.9 - 2.0 GHz Test Circuit Components Layout MRF6404 5.2-376 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6409 The MRF6409 is designed for GSM base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. * To be used in Class AB * Specified 26 Volts, 960 MHz Characteristics Output Power -- 20 Watts CW Gain -- 11 dB Typ Efficiency -- 60% Typ 20 W, 960 MHz RF POWER TRANSISTOR NPN SILICON CASE 319-07, STYLE 2 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage Rating VCEO 24 Vdc Collector-Emitter Voltage VCES 55 Vdc Emitter-Base Voltage VEBO 4.0 Vdc Collector-Current -- Continuous IC 5.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 45 0.26 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Symbol Max Unit RJC 3.8 C/W Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 20 mAdc, IB = 0) V(BR)CEO 24 30 -- Vdc Emitter-Base Breakdown Voltage (IB = 5.0 mAdc, IC =0) V(BR)EBO 4.0 5.0 -- Vdc Collector-Emitter Breakdown Voltage (IC = 20 mAdc, VBE = 0) V(BR)CES 55 60 -- Vdc ICES -- -- 6.0 mA Characteristic OFF CHARACTERISTICS Collector-Cutoff Current (VCE = 30 Vdc, VBE = 0) (1) Thermal resistance is determined under specified RF operating condition. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF6409 5.2-377 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit hFE 20 35 80 -- Cob -- 18 -- pF Common-Emitter Amplifier Power Gain (VCC = 26 Vdc, Pout = 20 W (CW), ICQ = 50 mA, f = 960 MHz) Gpe 10 11 -- dB Collector Efficiency (VCC = 26 Vdc, Pout = 20 W (CW), ICQ = 50 mA, f = 960 MHz) 50 60 -- % Load Mismatch (VCC = 26 Vdc, Pout = 15 W (CW), ICQ = 50 mA, f = 960 MHz, Load VSWR = 3:1, All Phase Angles at Frequency of Test) Characteristic ON CHARACTERISTICS DC Current Gain (ICE = 1.0 Adc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 26 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS No Degradation in Output Power T1 + - C8 5.0 V R2 C7 D2 R3 P1 B2 D1 C6 C9 C10 C11 + 26 V - R1 C3 C5 B1 RF OUTPUT RF INPUT C1 C2 C4 D.U.T. B1, B2 C1 C2, C3 C4 C5 C6, C9 C7, C10 C8 Ferrite Bead 3.3 pF, Chip Capacitor, High Q 4.7 pF, Chip Capacitor, High Q 2.2 pF, Chip Capacitor, High Q 82 pF, Chip Capacitor, High Q 330 pF, Chip Capacitor, High Q 0.1 F, Chip Capacitor 22 F, 16 V, Tantalum Capacitor C11 D1, D2 P1 R1 R2 R3 T1 Board 4.7 F, 50 V, Tantalum Capacitor Diode BAS16 Type or Equivalent 1.0 k, Trimmer 3.3 , Chip Resistor 68 , Chip Resistor 2.2 k, Resistor NPN Transistor Glass Teflon, r = 2.55, H = 1/50 inch Figure 1. Test Circuit Electrical Schematic MRF6409 5.2-378 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA TYPICAL CHARACTERISTICS 30 25 10 VCE = 26 V IQ = 50 mA f = 960 MHz 5.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 23 22 21 20 19 18 VCE = 26 V IQ = 50 mA Pin = 1 W 17 16 15 920 2.2 940 950 960 970 f, FREQUENCY (MHz) Figure 2. Output Power versus Input Power (CW) Figure 3. Output Power versus Frequency (CW) 30 13 70% 25 12 60% 11 50% 10 40% 9.0 30% 20 15 10 IQ = 50 mA f = 960 MHz Pin = 1, 6 W 5.0 0 18 20 22 24 7.0 0 26 60% 12 11.5 11 55% 10.5 10 50% VCE = 26 V IQ = 50 mA 930 940 950 960 45% 970 , COLLECTOR EFFICIENCY (%) 12.5 920 10 15 20 25 10% 35 30 Figure 5. Power Gain and Efficiency versus Output Power IMD, INTERMODULATION DISTORTION (dBc) 65% 13 9.0 910 5.0 20% Pout, OUTPUT POWER (WATTS) Figure 4. Output Power versus Supply Voltage (CW) 9.5 IQ = 50 mA f = 960 MHz 8.0 VCE, SUPPLY VOLTAGE (VOLTS) Gp , POWER GAIN (dB) 930 Pin, INPUT POWER (WATTS) 0 VCE = 26 V ICQ = 50 mA f1 = 960 MHz f2 = 960, 1 MHz -10 -20 -30 -40 -50 -60 0.1 f, FREQUENCY (MHz) Figure 6. Typical Broadband Performances MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 1.0 10 Pout, OUTPUT POWER (WATTS) PEP Figure 7. Intermodulation Distortion versus Output Power MRF6409 5.2-379 , COLLECTOR EFFICIENCY (%) 15 0 0 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 20 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 24 25 f = 980 MHz Zin 920 Zo = 10 920 f = 980 MHz ZOL* f (MHz) Zin () ZOL* () 920 1.4 + j3.0 3.2 - j2.5 940 1.5 + j3.9 3.5 - j1.88 960 1.5 + j4.2 3.9 - j2.5 980 1.6 + j4.4 4.0 - j2.8 ZOL*: Conjugate of optimum load impedance into which the device operates at a given output power, voltage, current and frequency. Figure 8. Input and Output Impedances with Circuit Tuned for Maximum Gain @ VCC = 26 V, ICQ = 50 mA, Pout = 20 W (CW) MRF6409 5.2-380 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Figure 9. 960 MHz Test Circuit RF, Photomaster Scale 1:1 (Reduced 18% in printed data book, DL110/D) C8 C6 B2 C9 C7 C10 C11 B R2 R1 C3 C5 B1 C1 C2 C4 Figure 10. 960 MHz Test Circuit RF, Photomaster Scale 1:1 and Components Location (Reduced 18% in printed data book, DL110/D) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF6409 5.2-381 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. * Specified 26 Volt, 960 MHz Characteristics Output Power = 50 Watts Minimum Gain = 8.5 dB @ 960 MHz, Class AB Minimum Efficiency = 50% @ 960 MHz, 50 Watts * Silicon Nitride Passivated * Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration 50 W, 960 MHz RF POWER TRANSISTOR NPN SILICON CASE 333A- 02, STYLE 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 28 Vdc Collector-Base Voltage VCBO 65 Vdc Emitter-Base Voltage VEBO 4 Vdc Collector-Current -- Continuous IC 6 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 134 0.77 Watts W/C Storage Temperature Range Tstg - 65 to +150 C Symbol Max Unit RJC 1.3 C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 20 mAdc, IB = 0) V(BR)CEO 28 -- -- Vdc Collector-Base Breakdown Voltage (IC = 20 mAdc, IE = 0) V(BR)CBO 65 -- -- Vdc Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 4 -- -- Vdc ICER -- -- 10 mAdc hFE 30 -- 120 -- Characteristic OFF CHARACTERISTICS Collector-Emitter Leakage Current (VCE = 30 Vdc, RBE = 75 ) ON CHARACTERISTICS DC Current Gain (ICE = 1 Adc, VCE = 5 Vdc) REV 1 MRF6414 5.2-382 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit Cob -- 45 -- pF Common-Emitter Amplifier Power Gain (VCC = 26 Vdc, Pout = 50 W, ICQ = 200 mA, f = 960 MHz) Gpe 8.5 -- -- dB Collector Efficiency (VCC = 26 Vdc, Pout = 50 W, ICQ = 200 mA, f = 960 MHz) 50 55 -- % Characteristic DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 26 Vdc, IE = 0, f = 1 MHz) (1) FUNCTIONAL TESTS Output Mismatch Stress (VCC = 26 Vdc, Pout = 50 W, ICQ = 200 mA, f = 960 MHz) VSWR = 3:1; all phase angles at frequency of test No Degradation in Output Power (1) For information only. It is not measurable in MRF6414 because of internal matching network. C9 +VCC T2 R1 C8 P1 C5 D1 C7 C6 D2 C4 R2 RF OUTPUT RF INPUT C3 T1 50 C1 50 W C1, C3 C2, C7 C5, C8 C6 C9 D1, D2 W C2 100 pF, Chip Capacitor, Hight Q 330 pF, Chip Capacitor, 0805 10 nF, Chip Capacitor, 0805 15 mF, Capacitor, 63 V 100 mF, Capacitor, 16 V Diode 1N4007 P1 R1 R2 T1 T2 1 k, Trimmer 1 k, Resistor 58 , Resistor, 0805 MRF6414 Transistor NPN Type BD135 Figure 1. 960 MHz Test Circuit Schematic MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF6414 5.2-383 70 70 60 60 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) TYPICAL CHARACTERISTICS 50 40 30 VCC = 26 V IQ = 200 mA f = 960 MHz 20 10 Pin = 5 W 50 40 30 20 VCC = 26 V IQ = 200 mA 10 0 0 2 0 4 6 Pin, INPUT POWER (WATTS) 8 900 10 Figure 2. Output Power versus Input Power (Typical) 920 940 f, FREQUENCY (MHz) 960 980 Figure 3. Output Power versus Frequency 12 60 70 10 50 Gpe, POWER GAIN (dB) Pout , OUTPUT POWER (WATTS) Gpe Pin = 5 W 3W 40 30 65 9 8 55 7 1.6 6 1.4 VSWR IQ = 200 mA f = 960 MHz 1.2 5 4 20 18 20 22 24 26 28 Vdc, SUPPLY VOLTAGE (VOLTS) 30 32 920 930 940 950 960 50 45 40 35 970 f, FREQUENCY (MHz) Figure 4. Output Power versus Supply Voltage MRF6414 5.2-384 60 Figure 5. Typical Broadband Amplifier MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA (SCALE 1:1) TEST CIRCUIT @ f = 960 MHz TEFLON GLASS 1/50 INCH Er = 2.55 Figure 6. MRF6414 Photomaster (Reduced 18% in printed data book, DL110/D) C9 MRF6414 C6 C4 C5 C8 C7 FB C1 C2 C3 OUTPUT INPUT Figure 7. 960 MHz Test Circuit Components Layout MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF6414 5.2-385 Normalized to 10 W Z*load f MHz Zin Ohms ZOL* Ohms 900 4.4 + j4.6 4.7 + j4.7 935 5.1 + j4.8 4.0 + j3.9 960 5.4 + j3.6 3.7 + j4.5 980 4.7 + j2.5 3.4 + j4.7 Zin ZOL*: Conjugate of optimum load impedance into which the device operates at a given output power, voltage, current and frequency. Figure 8. Input and Output Impedances with Circuit Tuned for Maximum Gain @ VCC = 26 V, IQ = 200 mA, Pout = 50 W MRF6414 5.2-386 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF6522-10R1 N-Channel Enhancement-Mode Lateral MOSFET LIFETIME BUY Designed for Class A-AB common source, linear power amplifiers in the 960 MHz range. The MRF6522-10R1 has been specifically designed for use in Communications Network (GSM) base stations. The package offers the advantage of SMD. * Specified 26 Volts, 960 MHz, Class AB Characteristics Output Power = 10 Watts CW Power Gain = 15 dB Min @ 960 MHz, 10 Watts CW D Drain Efficiency = 48% Min @ 960 MHz, 10 Watts CW * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * S-Parameter Characterization at High Bias Levels * Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances G * Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel. 960 MHz, 10 W, 26 V LATERAL N-CHANNEL RF POWER MOSFET CASE 458C-02, STYLE 1 S MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS 20 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 29 0.17 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Symbol Max Unit RJC 4.0 C/W Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0) IDSS -- -- 1.0 Adc Gate-Source Leakage Current (VGS = 20 Vdc, VDS = 0) IGSS -- -- 1.0 Adc OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.2 mA) (1) Thermal resistance is determined under specified RF operating condition. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF6522-10R1 5.2-387 LAST ORDER 31JUL04 RF Power Field Effect Transistor LAST SHIP 31JAN05 The RF MOSFET Line ELECTRICAL CHARACTERISTICS continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Gate Threshold Voltage (VDS = 10 V, ID = 50 A) VGS(th) 1.25 3.0 4.0 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 100 mA) VGS(Q) 2.25 4.0 5.0 Vdc Drain-Source On-Voltage (VGS = 10 V, ID = 0.5 A) VDS(on) -- -- 0.9 Vdc Input Capacitance (VDS = 26 V, VGS = 0 V, f = 1.0 MHz) Ciss -- 17 -- pF Output Capacitance (VDS = 26 V, VGS = 0 V, f = 1.0 MHz) Coss -- 10 -- pF Reverse Transfer Capacitance (VDS = 26 V, VGS = 0 V, f = 1.0 MHz) Crss -- 0.9 -- pF Common-Source Power Gain (VDS = 26 V, Pout = 10 W CW, IDQ = 100 mA, f = 960 MHz) Gps 15 17 -- dB Drain Efficiency (VDS = 26 V, Pout = 10 W CW, IDQ = 100 mA, f = 960 MHz) 48 50 -- % Input Return Loss (VDS = 26 V, Pout = 10 W CW, IDQ = 100 mA, f = 960 MHz) IRL -- -- -9 dB LIFETIME BUY DYNAMIC CHARACTERISTICS MRF6522-10R1 5.2-388 LAST ORDER 31JUL04 FUNCTIONAL TESTS (In Motorola Test Fixture) LAST SHIP 31JAN05 ON CHARACTERISTICS MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA TYPICAL CHARACTERISTICS Pout , OUTPUT POWER (WATTS) 20.5 G p, POWER GAIN (dB) 20 IDQ = 200 mA 19.5 19 18.5 IDQ = 100 mA 18 IDQ = 50 mA 17.5 17 VDS = 26 Vdc f = 960 MHz 16.5 16 0 10 8 6 4 VDS = 26 Vdc IDQ = 100 mA f = 960 MHz 2 0 2.0 4.0 6.0 8.0 10 12 0 0.05 Figure 1. Power Gain versus Output Power 50 40 30 20 0 0 VDS = 26 Vdc IDQ = 100 mA f = 960 MHz 2.0 4.0 6.0 8.0 0.15 0.2 0.25 Figure 2. Output Power versus Input Power 60 10 0.1 Pin, INPUT POWER (WATTS) CW IMD, INTERMODULATION DISTORTION (dBc) Eff, DRAIN EFFICIENCY (%) LIFETIME BUY Pout, OUTPUT POWER (WATTS) CW 10 12 -10 3rd Order -20 -30 5th LAST SHIP 31JAN05 12 -40 7th -50 VDS = 26 Vdc IDQ = 100 mA f1 = 959.9 MHz f2 = 960.0 MHz -60 -70 Pout, OUTPUT POWER (WATTS) CW Figure 3. Drain Efficiency versus Output Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 0 2.0 4.0 6.0 8.0 10 Pout, OUTPUT POWER (WATTS) PEP 12 Figure 4. Intermodulation Distortion Products versus Output Power MRF6522-10R1 5.2-389 LAST ORDER 31JUL04 21 f = 1000 MHz Zo = 50 LIFETIME BUY 800 f MHz ZOL* Ohms Zin Ohms 800 2.20 - j3.00 8.50 - j6.20 825 2.20 - j2.80 8.43 - j6.15 850 2.20 - j2.60 8.35 - j6.10 875 2.20 - j2.40 8.28 - j6.08 900 2.20 - j2.20 8.20 - j6.05 925 2.19 - j1.86 7.95 - j5.70 950 2.13 - j1.68 7.50 - j4.75 975 2.03 - j1.45 6.90 - j3.58 1000 2.00 - j1.00 6.50 - j3.00 Zin = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance into which the device operates at a given output power, voltage, current and frequency. Input Matching Network Output Matching Network Device Under Test Z in Z * OL Figure 5. Series Equivalent Input and Output Impedance MRF6522-10R1 5.2-390 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA LAST ORDER 31JUL04 ZOL* 800 LAST SHIP 31JAN05 f = 1000 MHz Zin Table 1. Common Source S-Parameters at VDS = 12 Vdc, ID = 100 mAdc S21 S12 S22 0.500 |S11| 0.794 -158 |S21| 2.77 54 |S12| 0.050 -29 |S22| 0.720 -150 0.525 0.800 -159 2.61 52 0.049 -32 0.730 -151 0.550 0.807 -160 2.45 49 0.048 -33 0.738 -152 0.575 0.811 -161 2.31 48 0.047 -35 0.746 -153 0.600 0.816 -162 2.18 46 0.046 -37 0.755 -154 0.625 0.822 -163 2.06 44 0.045 -38 0.763 -155 0.650 0.826 -164 1.95 42 0.043 -40 0.770 -156 0.675 0.832 -165 1.85 40 0.042 -41 0.779 -157 0.700 0.836 -166 1.75 39 0.041 -41 0.785 -158 0.725 0.841 -166 1.66 37 0.040 -42 0.793 -159 0.750 0.846 -167 1.58 35 0.039 -44 0.800 -160 0.775 0.851 -168 1.51 34 0.038 -45 0.805 -161 0.800 0.855 -168 1.44 32 0.037 -46 0.812 -162 0.825 0.858 -169 1.37 31 0.036 -47 0.818 -163 0.850 0.863 -170 1.31 29 0.035 -48 0.824 -164 0.875 0.866 -171 1.25 28 0.034 -49 0.830 -165 0.900 0.869 -172 1.20 27 0.033 -50 0.835 -166 0.925 0.872 -172 1.15 25 0.031 -51 0.840 -166 0.950 0.876 -173 1.10 24 0.030 -52 0.846 -167 0.975 0.879 -174 1.06 23 0.029 -52 0.850 -168 1.000 0.882 -174 1.02 22 0.028 -53 0.853 -169 Table 2. Common Source S-Parameters at VDS = 12 Vdc, ID = 250 mAdc f GHz S11 S21 S12 S22 0.500 |S11| 0.784 -164 |S21| 3.49 59 |S12| 0.041 -22 |S22| 0.690 -158 0.525 0.789 -165 3.29 57 0.040 -25 0.697 -159 0.550 0.794 -166 3.11 55 0.040 -26 0.705 -160 0.575 0.798 -167 2.94 53 0.038 -26 0.711 -160 0.600 0.802 -167 2.79 51 0.037 -28 0.719 -161 0.625 0.806 -168 2.65 50 0.037 -30 0.726 -162 0.650 0.811 -169 2.52 48 0.036 -31 0.732 -162 0.675 0.814 -169 2.40 46 0.035 -32 0.740 -163 0.700 0.819 -170 2.28 45 0.034 -32 0.747 -164 0.725 0.823 -171 2.18 43 0.034 -34 0.753 -164 0.750 0.827 -171 2.08 42 0.032 -36 0.760 -165 0.775 0.831 -172 1.99 40 0.032 -36 0.765 -166 0.800 0.834 -172 1.90 39 0.031 -36 0.772 -166 0.825 0.838 -173 1.82 37 0.031 -38 0.778 -167 0.850 0.842 -174 1.74 36 0.029 -38 0.783 -168 0.875 0.845 -174 1.67 35 0.028 -39 0.790 -169 0.900 0.850 -175 1.61 33 0.028 -39 0.797 -169 0.925 0.852 -175 1.54 32 0.027 -41 0.801 -170 0.950 0.854 -176 1.48 31 0.027 -42 0.807 -170 0.975 0.859 -176 1.43 30 0.025 -41 0.810 -171 1.000 0.861 -177 1.38 28 0.025 -42 0.815 -171 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF6522-10R1 5.2-391 LAST SHIP 31JAN05 S11 LAST ORDER 31JUL04 LIFETIME BUY f GHz Table 3. Common Source S-Parameters at VDS = 26 Vdc, ID = 100 mAdc 0.500 0.525 0.550 S21 -155 |S21| 4.05 0.836 -156 0.841 -157 0.575 0.845 0.600 0.849 0.625 S12 56 |S12| 0.033 3.81 54 3.58 51 -159 3.38 -160 3.19 0.853 -161 0.650 0.856 0.675 0.861 0.700 0.725 S22 -25 |S22| 0.687 -135 0.033 -27 0.697 -137 0.034 -28 0.707 -138 49 0.032 -31 0.718 -140 47 0.031 -32 0.728 -141 3.02 45 0.030 -34 0.737 -143 -162 2.86 43 0.029 -35 0.746 -144 -163 2.71 42 0.028 -37 0.755 -145 0.865 -164 2.57 40 0.028 -37 0.762 -147 0.868 -165 2.44 38 0.026 -38 0.771 -148 0.750 0.871 -166 2.32 37 0.025 -40 0.779 -149 0.775 0.875 -166 2.21 35 0.025 -41 0.786 -150 0.800 0.877 -167 2.11 33 0.023 -41 0.793 -151 0.825 0.880 -168 2.02 32 0.022 -43 0.800 -152 0.850 0.884 -169 1.92 30 0.022 -43 0.808 -154 0.875 0.886 -170 1.84 29 0.021 -44 0.815 -155 0.900 0.889 -171 1.76 27 0.020 -43 0.820 -156 0.925 0.892 -171 1.68 26 0.020 -46 0.826 -157 0.950 0.894 -172 1.61 24 0.019 -45 0.832 -158 0.975 0.897 -173 1.55 23 0.018 -47 0.837 -159 1.000 0.899 -173 1.49 22 0.017 -48 0.842 -160 LAST SHIP 31JAN05 S11 |S11| 0.832 Table 4. Common Source S-Parameters at VDS = 26 Vdc, ID = 250 mAdc f GHz S11 S21 S12 S22 0.500 |S11| 0.824 -160 |S21| 5.02 59 |S12| 0.029 -21 |S22| 0.627 -143 0.525 0.828 -161 4.74 57 0.027 -22 0.638 -144 0.550 0.832 -162 4.47 55 0.026 -22 0.648 -145 0.575 0.835 -163 4.23 53 0.027 -24 0.658 -146 0.600 0.838 -164 4.01 51 0.025 -26 0.669 -147 0.625 0.842 -165 3.81 50 0.025 -26 0.678 -148 0.650 0.844 -166 3.61 48 0.024 -25 0.687 -150 0.675 0.848 -167 3.43 46 0.023 -28 0.697 -150 0.700 0.851 -168 3.27 44 0.023 -30 0.706 -151 0.725 0.855 -168 3.12 43 0.022 -30 0.714 -152 0.750 0.858 -169 2.97 41 0.021 -31 0.723 -153 0.775 0.861 -170 2.84 39 0.021 -31 0.731 -154 0.800 0.863 -170 2.72 38 0.020 -32 0.738 -155 0.825 0.866 -171 2.60 36 0.019 -33 0.746 -156 0.850 0.870 -172 2.49 35 0.018 -34 0.754 -157 0.875 0.871 -173 2.38 33 0.018 -34 0.763 -158 0.900 0.875 -173 2.29 32 0.017 -35 0.768 -159 0.925 0.877 -174 2.20 30 0.016 -36 0.776 -160 0.950 0.879 -175 2.11 29 0.016 -36 0.782 -161 0.975 0.883 -175 2.03 28 0.016 -34 0.787 -161 1.000 0.885 -176 1.95 27 0.015 -34 0.793 -162 MRF6522-10R1 5.2-392 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA LAST ORDER 31JUL04 LIFETIME BUY f GHz Table 5. Common Source S-Parameters at VDS = 26 Vdc, ID = 500 mAdc 0.500 0.525 0.550 S21 -162 |S21| 5.08 0.834 -162 0.838 -164 0.575 0.840 0.600 0.844 0.625 S12 60 |S12| 0.025 4.80 58 4.53 56 -164 4.29 -165 4.07 0.847 -166 0.650 0.849 0.675 0.852 0.700 0.725 S22 -17 |S22| 0.612 -145 0.025 -20 0.624 -146 0.024 -21 0.635 -147 54 0.024 -21 0.644 -148 52 0.023 -23 0.655 -149 3.86 50 0.023 -24 0.664 -150 -167 3.66 48 0.022 -25 0.673 -151 -168 3.48 46 0.021 -27 0.682 -152 0.856 -169 3.32 45 0.021 -28 0.690 -153 0.858 -170 3.17 43 0.020 -28 0.701 -154 0.750 0.861 -170 3.02 41 0.019 -30 0.709 -154 0.775 0.864 -171 2.89 40 0.019 -29 0.716 -155 0.800 0.866 -172 2.76 38 0.018 -29 0.723 -156 0.825 0.869 -172 2.65 37 0.017 -29 0.733 -157 0.850 0.872 -173 2.53 35 0.017 -31 0.742 -158 0.875 0.874 -174 2.43 34 0.016 -31 0.751 -159 0.900 0.878 -175 2.33 32 0.015 -31 0.757 -160 0.925 0.879 -175 2.24 31 0.015 -32 0.763 -161 0.950 0.881 -176 2.15 29 0.014 -31 0.770 -161 0.975 0.884 -176 2.07 28 0.014 -31 0.775 -162 1.000 0.886 -177 2.00 27 0.013 -30 0.781 -163 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA LAST SHIP 31JAN05 S11 |S11| 0.832 LAST ORDER 31JUL04 LIFETIME BUY f GHz MRF6522-10R1 5.2-393 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband performances of this device makes it ideal for large-signal, common source amplifier applications in 26 volt base station equipment. * Specified Performance @ Full GSM Band, 921-960 MHz, 26 Volts Output Power, P1dB -- 80 Watts (Typ) Power Gain @ P1dB -- 16 dB (Typ) Efficiency @ P1dB -- 58% (Typ) * MRF6522-70 Available in Tape and Reel by Adding R3 Suffix to Part Number. MRF6522-70R3 = 250 Units per 32 mm, 13 inch Reel. 921 - 960 MHz, 70 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET CASE 465D-02, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS 20 Vdc Drain Current -- Continuous ID 7 Adc Total Device Dissipation @ TC 25C Derate above 25C PD 159 0.9 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Symbol Max Unit RJC 1.1 C/W Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 MRF6522-70 MRF6522-70R3 5.2-394 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) IDSS -- -- 10 Adc Gate-Source Leakage Current (VGS = 20 Vdc, VDS = 0 ) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 400 mAdc) VGS(Q) 3 4 5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) -- 0.15 0.6 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs 2 3 -- S Input Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Ciss -- 130 -- pF Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Coss 41 47 52 pF Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Crss 2.4 3 3.4 pF Output Power (2) (VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz) P1dB 73 80 -- W Common-Source Amplifier Power Gain @ P1dB (Min) (2) (VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz) Gps 14 16 18 dB Drain Efficiency @ Pout = 50 W (VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz) 1 47 51 -- % Drain Efficiency @ P1dB (2) (VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz) 2 -- 58 -- % Input Return Loss @ Pout = 50 W (VDD = 26 Vdc, IDQ = 400 mA, f = 921 MHz and 960 MHz f = 940 MHz) IRL OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 Adc) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture) Output Mismatch Stress (2) (VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz, VSWR = 5:1, All Phase Angles) dB 10 15 -- -- -- -- No Degradation In Output Power Before and After Test (1) Value excludes the input matching. (2) To meet application requirements, Motorola test fixtures have been designed to cover full GSM 900 band ensuring batch-to-batch consistency. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF6522-70 MRF6522-70R3 5.2-395 Vreg VBIAS C1 Vin T1 Vout Gnd R1 R6 R2 R3 C3 C12 C4 C10 VSUPPLY C2 T2 R4 C7 C14 R5 C6 C13 RF Output RF Input C5 Q1 C8 C1 C2 C3 C4, C6, C14 C5 C7, C8, C13 C9, C10 C11, C12 R1 R2 1.0 F, Chip Capacitor 0805 10 F, 35 Vdc Tantalum Capacitor 100 nF, Chip Capacitor 22 pF, ACCU-P Chip Capacitor 0805 2.7 pF, ACCU-P Chip Capacitor 0805 4.7 pF, ACCU-P Chip Capacitor 0805 8.2 pF, ACCU-P Chip Capacitor 0805 2.2 pF, ACCU-P Chip Capacitor 0805 10 , Chip Resistor 0805 1.0 k, Chip Resistor 0805 C9 C11 R3 R4 R5 R6 1.2 k, Chip Resistor 0805 2.2 k, Chip Resistor 0805 220 , Chip Resistor 0805 5.0 k SMD Potentiometer T1 T2 LP2951 Micro-8 BC847 SOT-23 SUBSTRATE GI180 0.8 mm Figure 1. MRF6522-70 Test Circuit Schematic MRF6522-70 MRF6522-70R3 5.2-396 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA TYPICAL CHARACTERISTICS 17.5 18.0 IDQ = 600 mA G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) 17.0 500 mA 16.5 400 mA 200 mA IDQ = 600 mA 17.8 300 mA 16.0 VDS = 26 Vdc f = 921 MHz 17.6 500 mA 17.4 400 mA 17.2 300 mA 17.0 16.8 200 mA 16.6 VDS = 26 Vdc f = 960 MHz 16.4 15.5 16.2 15.0 10 16.0 100 10 100 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Figure 2. Power Gain versus Output Power Figure 3. Power Gain versus Output Power 105 Pin = 5.0 W 3.0 W 95 2.0 W 85 75 65 IDQ = 400 mA f = 921 MHz 55 45 18 19 20 21 23 25 22 24 26 VDD, SUPPLY VOLTAGE (VOLTS) 27 28 95 Pin = 5.0 W 4.0 W 85 3.0 W 75 2.0 W 65 55 IDQ = 400 mA f = 960 MHz 45 35 18 Pout , OUTPUT POWER (WATTS) Figure 4. Output Power versus Supply Voltage 19 20 21 22 23 24 25 26 VDD, SUPPLY VOLTAGE (VOLTS) 80 70 70 60 60 50 h 40 40 30 30 Pout 20 20 VDS = 26 V IDQ = 400 mA f = 921 MHz 10 0 0 0.5 28 Figure 5. Output Power versus Supply Voltage 80 50 27 h , EFFICIENCY (%) 4.0 W 105 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 115 1.0 1.5 Pin, INPUT POWER (WATTS) 10 0 2.0 Figure 6. Efficiency and Output Power versus Input Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF6522-70 MRF6522-70R3 5.2-397 TYPICAL CHARACTERISTICS 80 80 Pout 70 60 60 50 50 h 40 40 30 30 20 20 VDS = 26 V IDQ = 400 mA f = 960 MHz 10 0 h , EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 70 0 0.5 1.0 1.5 Pin, INPUT POWER (WATTS) 10 0 2.0 20 70 19 60 50 18 17 Gps 40 30 16 h 15 VDS = 26 Vdc f = 921 MHz 20 h , EFFICIENCY (%) G ps , POWER GAIN (dB) Figure 7. Efficiency and Output Power versus Input Power 10 14 13 0 0.02 0.03 0.06 0.12 0.21 0.38 0.70 1.26 2.26 3.96 Pin, INPUT POWER (WATTS) 20 70 19 60 18 50 17 Gps 40 30 16 h 15 VDS = 26 Vdc f = 960 MHz 20 h , EFFICIENCY (%) G ps , POWER GAIN (dB) Figure 8. Power Gain and Efficiency versus Input Power 10 14 13 0 0.02 0.03 0.05 0.10 0.18 0.34 0.62 1.15 2.14 3.70 Pin, INPUT POWER (WATTS) Figure 9. Power Gain and Efficiency versus Input Power MRF6522-70 MRF6522-70R3 5.2-398 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA VBIAS C1 VSUPPLY Ground C2 R1 T1 R2 R3 R6 C14 R4 C3 T2 C4 R5 MRF6522-70 C7 C6 C5 C8 C10 C12 C13 C9 C11 STRAP Q1 Figure 10. Component Parts Layout 18 Gps -15 17 -20 16 IRL G ps , GAIN (dB) IRL, INPUT RETURN LOSS (dB) -10 VDS = 26 Vdc IDQ = 400 mA 15 -25 910 920 930 940 950 f, FREQUENCY (MHz) 960 970 Figure 11. Performance in Broadband Circuit (at Small Signal) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF6522-70 MRF6522-70R3 5.2-399 Zin f = 925 MHz 960 MHz Zo = 10 ZOL* f = 925 MHz 960 MHz VSUPPLY = 26 Vdc, IBIAS = 400 mA, CW = Room Temperature f MHz Zin ZOL* Zin 925 2.65 + j2.53 1.62 - j0.2 940 2.67 + j2.14 1.56 - j0.34 960 2.85 + j1.87 1.55 - j0.2 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Note: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Input Matching Network Output Matching Network Device Under Test Z in Z * OL Figure 12. Series Equivalent Input and Output Impedance MRF6522-70 MRF6522-70R3 5.2-400 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of these devices makes them ideal for large-signal, common-source amplifier applications in 28 volt base station equipment. * Typical Two-Tone Performance at 945 MHz, 28 Volts Output Power - 45 Watts PEP Power Gain - 18.8 dB Efficiency - 42% IMD - -32 dBc MRF9045 MRF9045S MRF9045SR1 945 MHz, 45 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs * Integrated ESD Protection * Ease of Design for Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts (CW) Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters CASE 360B-03, STYLE 1 (MRF9045) * MRF9045S Is Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. CASE 360C-03, STYLE 1 (MRF9045S) MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage Symbol Value Unit VDSS 65 Vdc VGS + 15, - 0.5 Vdc Total Device Dissipation @ TC = 25C Derate above 25C MRF9045 PD 125 0.71 Watts W/C Total Device Dissipation @ TC = 25C Derate above 25C MRF9045S PD 175 1 Watts W/C Tstg - 65 to +200 C TJ 200 C Storage Temperature Range Operating Junction Temperature ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Typical) Machine Model M1 (Typical) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case MRF9045 MRF9045S Symbol Max Unit RJC 1.4 1.0 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 2 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF9045 MRF9045S MRF9045SR1 5.2-401 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 ) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 150 Adc) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 350 mAdc) VGS(Q) -- 3.7 -- Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) -- 0.19 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) gfs -- 4 -- S Input Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Ciss -- 69 -- pF Output Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Coss -- 37 -- pF Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Crss -- 1.5 -- pF OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS (continued) MRF9045 MRF9045S MRF9045SR1 5.2-402 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Two-Tone Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Gps 17 18.8 -- dB Two-Tone Drain Efficiency (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) 38 42 -- % 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IMD -- -32 -28 dBc Input Return Loss (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IRL 9 14 -- dB Two-Tone Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Gps -- 18.5 -- dB Two-Tone Drain Efficiency (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) -- 41 -- % 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IMD -- -33 -- dBc Input Return Loss (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IRL -- 13 -- dB Power Output, 1 dB Compression Point (VDD = 28 Vdc, Pout = 45 W CW, IDQ = 350 mA, f1 = 945.0 MHz) P1dB -- 55 -- W Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 45 W CW, IDQ = 350 mA, f1 = 945.0 MHz) Gps -- 18 -- dB Drain Efficiency (VDD = 28 Vdc, Pout = 45 W CW, IDQ = 350 mA, f1 = 945.0 MHz) -- 60 -- % Output Mismatch Stress (VDD = 28 Vdc, Pout = 45 W CW, IDQ = 350 mA, f = 945.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) FUNCTIONAL TESTS (In Motorola Test Fixture) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA No Degradation In Output Power MRF9045 MRF9045S MRF9045SR1 5.2-403 B2 + C15 C14 + C16 + VDD C17 L2 B1 VGG + C6 C7 L1 Z8 C9 Z9 Z10 Z11 C8 RF INPUT Z1 Z12 C10 Z3 Z4 Z5 Z6 C12 C11 C4 C1 Z2 Z13 RF OUTPUT Z14 C13 Z15 Z7 C5 C2 B1 B2 C1, C7, C13, C14 C2, C3, C11 C4, C5, C8, C9 C6, C15, C16 C10 C12 C17 L1, L2 Z1 Z2 Z3 C3 Short Ferrite Bead Surface Mount Long Ferrite Bead Surface Mount 47 pF, Chip Capacitors, B Case 0.8-8.0 pF, Gigatrim Variable Trim Capacitors 10 pF, Chip Capacitors, B Case 10 F, 35 V Tantalum Surface Mount Chip Capacitors 2.2 pF, Chip Capacitor, B Case 0.7 pF, Chip Capacitor, B Case - MRF9045S 1.3 pF, Chip Capacitor, B Case - MRF9045 220 F, 50 V Electrolytic Capacitor 12.5 nH, Surface Mount Inductors, Coilcraft T-Line, 0.260 x 0.080 T-Line, 0.610 x 0.120 T-Line, 0.260 x 0.320 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z14 Z15 Printed Circuit Board T-Line, 0.360 x 0.320 Taper, 0.240 x 0.320 x 0.620 T-Line, 0.140 x 0.620 T-Line, 0.510 x 0.620 T-Line, 0.330 x 0.320 T-Line, 0.140 x 0.320 T-Line, 0.070 x 0.080 T-Line, 0.240 x 0.080 T-Line, 0.140 x 0.080 T-Line, 0.930 x 0.080 T-Line, 0.180 x 0.080 T-Line, 0.350 x 0.080 0.03 Glass Teflon, r = 2.55 ARLON GX-0300-55-22 Figure 1. 930 - 960 MHz Broadband Test Circuit Schematic MRF9045 MRF9045S MRF9045SR1 5.2-404 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA C6 VGG C17 VDD B1 B2 C7 C14 C3 C4 WB2 C9 C8 CUT OUT AREA C2 C15 C16 L2 WB1 L1 C1 C5 C13 C10 C11 C12 MRF9045 900 MHz Rev-01 Figure 2. 930 - 960 MHz Broadband Test Circuit Component Layout MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF9045 MRF9045S MRF9045SR1 5.2-405 Gps 50 18 h 45 VDD = 28 Vdc Pout = 45 Watts (PEP) IDQ = 350 mA Two-Tone Measurement, 100 kHz Tone Spacing 17 16 15 IMD 40 -30 -32 -34 14 IRL -36 13 12 930 935 940 945 950 f, FREQUENCY (MHz) -38 960 955 -12 -14 IRL, INPUT RETURN LOSS (dB) G ps , POWER GAIN (dB) 19 IMD, INTERMODULATION DISTORTION (dBc) 55 20 h , DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS -16 Figure 3. Class AB Broadband Circuit Performance IDQ = 525 mA 19.0 400 mA 18.5 350 mA 18.0 300 mA 17.5 VDD = 28 Vdc f1 = 945 MHz 17.0 16.5 1 0.5 10 Pout, OUTPUT POWER (WATTS) -10 -30 -40 -60 VDD = 28 Vdc IDQ = 350 mA f1 = 945 MHz f2 = 945.1 MHz -20 -30 -40 3rd Order -50 -60 5th Order -70 525 mA 400 mA 350 mA 0.5 1 10 100 Pout, OUTPUT POWER (WATTS) Figure 5. Intermodulation Distortion versus Output Power Gps, POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) Figure 4. Power Gain versus Output Power -10 IDQ = 300 mA -50 -70 100 VDD = 28 Vdc f1 = 945 MHz f2 = 945.1 MHz -20 20 70 19 60 Gps 18 50 17 40 16 30 15 20 h VDD = 28 Vdc IDQ = 350 mA f1 = 945 MHz 14 -80 7th Order -90 0.5 1 13 10 100 Pout, OUTPUT POWER (WATTS) PEP 1 10 10 100 0 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Intermodulation Distortion Products versus Output Power MRF9045 MRF9045S MRF9045SR1 5.2-406 0.1 h, DRAIN EFFICIENCY (%) 19.5 IMD, INTERMODULATION DISTORTION (dBc) G ps , POWER GAIN (dB) 20.0 Figure 7. Power Gain, Efficiency versus Output Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Zo = 10 Zin ZOL* f = 895 MHz f = 865 MHz f = 865 MHz f = 895 MHz VDD = 28 V, IDQ = 350 mA, Pout = 45 W (PEP) f MHz Zin ZOL* Zin 930 1.02 + j0.06 2.6 + j0.20 945 1.10 + j0.11 2.6 + j0.16 960 1.15 + j0.25 2.6 + j0.10 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Note: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Input Matching Network Output Matching Network Device Under Test Z in Z * OL Figure 8. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF9045 MRF9045S MRF9045SR1 5.2-407 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line RF Power Field Effect Transistor MRF9045MR1 N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications in 28 volt base station equipment. * Typical Performance at 945 MHz, 28 Volts Output Power - 45 Watts PEP Power Gain - 18.5 dB Efficiency - 41% (Two Tones) IMD - -31 dBc * Integrated ESD Protection * Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz, 45 Watts (CW) Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Moisture Sensitivity Level 3 * RF Power Plastic Surface Mount Package * Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. 945 MHz, 45 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET CASE 1265-06, STYLE 1 (TO-270) PLASTIC MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Rating VDSS 65 Vdc Gate-Source Voltage VGS + 15, - 0.5 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 156(1) 1.25(1) Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 150 C Operating Junction Temperature ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Typical) Machine Model M2 (Typical) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.8(1) C/W (1) Simulated NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MRF9045MR1 5.2-408 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 ) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 150 Adc) VGS(th) 2 -- 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 350 mAdc) VGS(Q) -- 3.7 -- Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) -- 0.19 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) gfs -- 4 -- S Input Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Ciss -- 74 -- pF Output Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Coss -- 39 -- pF Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Crss -- 1.9 -- pF OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS (continued) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF9045MR1 5.2-409 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Two-Tone Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Gps 17 18.5 -- dB Two-Tone Drain Efficiency (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) 38 41 -- % 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IMD -- -31 -28 dBc Input Return Loss (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IRL 9 15 -- dB Two-Tone Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Gps -- 18.5 -- dB Two-Tone Drain Efficiency (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) -- 41 -- % 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IMD -- -31 -- dBc Input Return Loss (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IRL -- 13 -- dB FUNCTIONAL TESTS (In Motorola Test Fixture) MRF9045MR1 5.2-410 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA B2 B1 VGG + C6 C7 + C15 C14 L1 RF INPUT Z1 Z3 Z4 Z5 Z6 C9 Z7 C2 B1, B2 C1, C7, C13, C14 C2, C8 C3 C4, C5, C8, C9 C6 C10 C11 C12 C17 L1, L2 Z1 Z2 + VDD C17 L2 C5 C1 Z2 + C16 Z8 C4 C3 Z9 Z10 C8 DUT Short Ferrite Beads, Surface Mount 47 pF, Chip Capacitors, B Case 2.7 pF, Chip Capacitors, B Case 3.9 pF, Chip Capacitor, B Case 10 pF, Chip Capacitors, B Case 10 F, 35 V Tantalum Surface Mount Capacitor 2.2 pF, Chip Capacitor, B Case 4.7 pF, Chip Capacitor, B Case 1.2 pF, Chip Capacitor, B Case 220 F, 50 V Electrolytic Capacitor 12.5 nH, Inductors 0.20 x 0.08 0.57 x 0.12 Z12 C13 Z11 C10 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 C11 RF OUTPUT Z13 C12 0.14 x 0.32 0.47 x 0.32 0.16 x 0.32 x 0.62 Tapered 0.18 x 0.62 0.56 x 0.62 0.33 x 0.32 0.14 x 0.32 0.36 x 0.08 1.01 x 0.08 0.15 x 0.08 0.29 x 0.08 Figure 1. 945 MHz Broadband Test Circuit Schematic C6 C17 Vbias Vsupply B1 B2 C7 C2 C3 Ground C4 WB2 C1 WB1 A1 C15 C16 C14 L2 C5 CUT OUT AREA L1 C9 C8 A2 C10 C11 C12 C13 MRF9045MR1 Ground Figure 2. 945 MHz Broadband Test Circuit Components Layout MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF9045MR1 5.2-411 VDD = 28 Vdc Pout = 45 Watts (PEP) IDQ = 350 mA Two-Tone Measurement 100 kHz Tone Spacing 35 30 IRL 25 -15 Gps 20 -25 15 IMD3 10 5 -35 900 920 940 960 980 1000 0 50 -10 40 30 20 -20 IRL VDD = 28 Vdc IDQ = 350 mA f = 945 MHz Two-Tone Measurement 100 kHz Tone Spacing -30 Gps -40 h -50 10 -60 0 0.5 1 10 100 f, FREQUENCY (MHz) Pout, OUTPUT POWER (WATTS) PEP Figure 3. Class AB Test Circuit Performance Figure 4. Power Gain, Efficiency and IRL versus Output Power -30 IMD, INTERMODULATION DISTORTION (dBc) -25 IDQ = 200 mA -35 -40 IDQ = 350 mA -45 IDQ = 500 mA VDD = 28 Vdc f = 945 MHz Two-Tone Measurement 100 kHz Tone Spacing -55 1 10 -25 VDD = 28 Vdc IDQ = 350 mA f = 945 MHz Two-Tone Measurement, 100 kHz Tone Spacing -30 -35 -40 3rd Order -45 5th Order -50 -55 7th Order -60 -65 -70 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 5. Intermodulation Distortion versus Output Power Figure 6. Intermodulation Distortion Products versus Output Power Gps 50 15 40 VDD = 28 Vdc IDQ = 350 mA f = 945 MHz 30 h 20 10 10 0 1 10 100 P out , OUTPUT POWER (WATTS) PEP 60 20 5 0.5 -20 100 h, DRAIN EFFICIENCY (%) -50 -60 0.5 G ps , POWER GAIN (dB) 60 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 Pin = 1 W Pin = 0.6 W Pin = 0.3 W 22 24 26 IDQ = 350 mA f = 945 MHz Two-Tone Measurement 100 kHz Tone Spacing 28 30 32 Pout, OUTPUT POWER (WATTS CW) VDD, DRAIN VOLTAGE (VOLTS) Figure 7. CW Power Gain and Drain Efficiency versus Output Power Figure 8. Output Voltage versus Supply Voltage MRF9045MR1 5.2-412 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA IRL, INPUT RETURN LOSS (dB) 40 h , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) h 45 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATIONDISTORTION (dBc) -5 50 IMD, INTERMODULATION DISTORTION (dBc) h , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) TYPICAL CHARACTERISTICS Zo = 10 Zin ZOL* f = 930 MHz f = 930 MHz f = 945 MHz f = 945 MHz VDD = 28 V, IDQ = 350 mA, Pout = 45 W (PEP) f MHz Zin ZOL* Zin 930 0.81 + j0.25 2.03 - j0.09 945 0.85 + j0.05 2.03 - j0.28 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Note: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Input Matching Network Output Matching Network Device Under Test Z in Z * OL Figure 9. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF9045MR1 5.2-413 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors MRF9080 MRF9080S N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large-signal, common- source amplifier applications in 26 volt base station equipment. * Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts Output Power @ P1db: 75 Watts Power Gain @ P1db: 18.5 dB Efficiency @ P1db: 55% * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Ease of Design for Gain and Insertion Phase Flatness * Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters GSM 900 MHz FREQUENCY BAND, 75 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 465-04, STYLE 1 (MRF9080) CASE 465A-04, STYLE 1 (MRF9080S) MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS +15, - 0.5 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 250 1.43 Watts W/C Storage Temperature Range Tstg - 65 to +200 C TJ 200 C Operating Junction Temperature ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Typical) Machine Model M1 (Typical) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.7 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 0 MRF9080 MRF9080S 5.2-414 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vds, VGS = 0) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 ) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) VGS(th) 2.0 -- 4.0 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 700 mAdc) VGS(Q) -- 3.7 -- Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) -- 0.19 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 6 Adc) gfs -- 8.0 -- S Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Coss -- 73 -- pF Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Crss -- 2.9 -- pF Power Output, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz) P1dB 68 75 -- W Common-Source Amplifier Power Gain @ 70 W (Min) (VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz) Gps 17 18.5 20 dB Drain Efficiency @ Pout = 70 W (VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz) 1 47 52 -- % Drain Efficiency @ P1dB (VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz) 2 -- 55 -- % Input Return Loss (VDD = 26 Vdc, Pout = 70 W, IDQ = 600 mA, f = 921 and 960 MHz) IRL 9.5 12.5 -- dB Output Mismatch Stress (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 600 mA, f = 921 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS (1) FUNCTIONAL TESTS (In Motorola Test Fixture) (2) No Degradation In Output Power Before and After Test (1) Part is internally input matched. (2) To meet application requirements, Motorola test fixtures are designed to cover full GSM 900 band ensuring batch to batch consistency MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF9080 MRF9080S 5.2-415 VGG + U1 C6 R1 C5 R2 R3 VDD + P1 C9 R4 T1 + C15 C4 C3 R5 C10 C7 C13 DUT RF INPUT C14 RF OUTPUT R6 C1 C2 C11 C12 C8 Figure 1. Broadband GSM 900 Optimized Demo Board Schematic Table 1. Broadband GSM 900 Optimized Demo Board Component Designations and Values Designators Description C1 4.7 pF Chip Capacitor, ACCU-P (0805) AVX #08051J3R9CBT C2 3.9 pF Chip Capacitor, ACCU-P (0805) AVX #08051J3R9CBT C3, C15 22 pF Chip Capacitors, ACCU-P (0805) AVX #08051J221 C4, C6 22 mF, 35 V Tantalum Chip Capacitors, Kemet #T491X226K035AS4394 C5 1.0 mF Chip Capacitor, ACCU-P (0805) AVX #08053G105ZATEA C7, C8 5.6 pF Chip Capacitors, ACCU-P (0805) AVX #08051J5R18CBT C9 220 mF, 63 V Electrolytic Capacitor C10, C11 3.3 pF Chip Capacitors, ACCU-P (0805) AVX #08051J8R2CBT C12, C13 2.2 pF Chip Capacitors, ACCU-P (0805) AVX #08051J2R2CBT C14 4.7 pF Chip Capacitor, ATC #100B P1 5.0 k Potentiometer CMS Cermet Multi-turn, Bourns #3224W R1 10 , 1/8 W Chip Resistor (0805) R2 1.0 k, 1/8 W Chip Resistor (0805) R3 1.2 k, 1/8 W Chip Resistor (0805) R4 2.2 k, 1/8 W Chip Resistor (0805) R5, R6 1.0 k, 1/8 W Chip Resistor (0805) T1 Bipolar NPN Transistor, SOT-23, ON Semiconductor #BC847ALT1 U1 Voltage Regulator, Micro-8, ON Semiconductor #LP2951ACDM-5.0R2 RF Connectors, Type SMA, Radial #R125510001 Substrate = Taconic RF35, Thickness 0.5mm MRF9080 MRF9080S 5.2-416 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA VBIAS C5 R1 Ground VSUPPLY U1 R2 R4 T1 C9 C6 P1 R3 C15 C4 R5 C7 R6 C3 C10 C13 C11 C12 C1 C2 C14 C8 MRF9080 Figure 2. Broadband GSM 900 Optimized Demo Board Component Layout MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF9080 MRF9080S 5.2-417 TYPICAL CHARACTERISTICS (IN MOTOROLA BROADBAND GSM 900 OPTIMIZED DEMO BOARD) 21 20 30 Vdc 800 mA 600 mA 19 400 mA 17 VDD = 26 Vdc f = 940 MHz T = 25C 1 10 Pout, OUTPUT POWER (WATTS) 19 18 IDQ = 600 mA f = 940 MHz T = 25C 17 100 Figure 3. Power Gain versus Output Power G ps , POWER GAIN (dB) Pout = 20 W -5 70 W 19 -10 IRL 18 -15 Pout = 20 W 17 -20 70 W VDD = 26 Vdc IDQ = 600 mA T = 25C 16 15 850 870 890 -25 910 50 h 40 70 30 Pout 60 50 40 0 0.2 0.4 1 1.2 0.6 0.8 1.4 Pin, INPUT POWER (WATTS) 1.6 110 P out , OUTPUT POWER (WATTS) 85C 18 VDD = 26 Vdc IDQ = 600 mA f = 940 MHz 1 100 85C h 80 40 25C 70 45 35 85C 30 60 50 25 Pout 20 40 15 30 VDD = 26 Vdc IDQ = 600 mA f = 940 MHz 20 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 10 5 0 1.8 Pin, INPUT POWER (WATTS) Figure 7. Power Gain versus Output Power MRF9080 MRF9080S 5.2-418 50 25C 90 10 10 Pout, OUTPUT POWER (WATTS) 0 1.8 55 100 50C 17 10 Figure 6. Output Power and Efficiency versus Input Power 25C 19 20 VDD = 26 Vdc IDQ = 600 mA f = 940 MHz T = 25C 30 20 10 0 -30 930 950 970 990 1010 1030 1050 f, FREQUENCY (MHz) 20 G ps , POWER GAIN (dB) 100 60 100 90 80 Figure 5. Power Gain and Input Return Loss versus Frequency 16 10 Pout, OUTPUT POWER (WATTS) 120 110 IRL, INPUT RETURN LOSS (dB) P out , OUTPUT POWER (WATTS) Gps 20 1 Figure 4. Power Gain versus Output Power 0 21 VDD = 22 Vdc h, DRAIN EFFICIENCY (%) 18 26 Vdc h, DRAIN EFFICIENCY (%) 20 G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) IDQ = 1000 mA Figure 8. Output Power and Efficiency versus Input Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Zin f = 1000 MHz f = 880 MHz Zo = 10 ZOL* f = 880 MHz f = 1000 MHz VDD = 26 V, IDQ = 600 mA, Pout = 90 W (CW) f MHz ZOL* Zin 880 0.91 + j2.11 1.22 + j0.12 920 0.88 + j2.65 1.00 + j0.16 960 1.6 + j2.61 1.22 + j0.22 1000 2.45 + j3.38 1.14 + j0.41 Zin = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, bias current and frequency. Note: ZOL* was chosen based on tradeoffs between gain, output power and drain efficiency. Input Matching Network Output Matching Network Device Under Test Z in Z * OL Figure 9. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF9080 MRF9080S 5.2-419 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF9085 MRF9085S RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies in the 865 to 895 MHz band. The high gain and broadband performance of these devices makes them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. * Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 700 mA IS-97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power = 20 Watts Power Gain = 17.9 dB Efficiency = 28% Adjacent Channel Power - 750 kHz: -45.0 dBc @ 30 kHz BW 1.98 MHz: -60.0 dBc @ 30 kHz BW * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Ease of Design for Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 90 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters 880 MHz, 90 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 465-04, STYLE 1 (MRF9085) CASE 465A-04, STYLE 1 (MRF9085S) MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS +15, - 0.5 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 250 1.43 Watts W/C Storage Temperature Range Tstg - 65 to +200 C TJ 200 C Operating Junction Temperature ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Typical) Machine Model MRF9085 MRF9085S M2 (Typical) M1 (Typical) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.7 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 MRF9085 MRF9085S 5.2-420 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vds, VGS = 0) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 ) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) VGS(th) 2.0 -- 4.0 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 700 mAdc) VGS(Q) -- 3.7 -- Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) -- 0.19 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 6 Adc) gfs -- 8.0 -- S Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Coss -- 73 -- pF Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Crss -- 2.9 -- pF OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS (1) (1) Part is internally input matched. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA (continued) MRF9085 MRF9085S 5.2-421 ELECTRICAL CHARACTERISTICS - continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) Gps 17 17.9 -- dB Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) 36 40 -- % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) IMD -- -31 -28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) IRL 9 21 -- dB Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 865.0 MHz, f2 = 865.1 MHz) Gps -- 17.9 -- dB Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 865.0 MHz, f2 = 865.1 MHz) -- 40.0 -- % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 865.0 MHz, f2 = 865.1 MHz) IMD -- -31 -- dBc Input Return Loss (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 700 mA, f1 = 865.0 MHz, f2 = 865.1 MHz) IRL -- 16 -- dB P1dB -- 105 -- W Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 700 mA, f1 = 880.0 MHz) Gps -- 17.5 -- dB Drain Efficiency (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 700 mA, f1 = 880.0 MHz) -- 51 -- % Output Mismatch Stress (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 700 mA, f = 880.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) FUNCTIONAL TESTS (In Motorola Test Fixture) Power Output, 1 dB Compression Point (VDD = 26 Vdc, CW, IDQ = 700 mA, f1 = 880.0 MHz) MRF9085 MRF9085S 5.2-422 No Degradation In Output Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA VGG + B1 B3 B2 VDD + + C7 C8 C9 C16 L1 + + + C17 C18 C19 L2 C11 RF INPUT Z11 C6 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 C3 Z16 C12 C10 C4 Z15 Z17 Z18 Z19 C13 C15 C14 Z10 C1 B1, B2, B3 C1, C9, C15, C16 C3 C4, C13 C5, C6, C12 C7, C17, C18, C19 C8 C10, C11 C14 L1 L2 N1, N2 WB1, WB2 Z1 Z2 Z3 Z4 Z5 Z12 Z13 Z14 Z20 RF OUTPUT DUT C5 Short Ferrite Bead, Surface Mount 47 pF, B Case Chip Capacitor, ATC 5.6 pF, B Case Chip Capacitor, ATC 0.8 - 8.0 Gigatrim Variable Capacitor 10 pF, B Case Chip Capacitor, ATC 10 mF, 35 V, Tantalum Surface Mount Capacitor, Kemet 20 K pF, B Case Chip Capacitor, ATC 16 pF, B Case Chip Capacitor, ATC 0.6 - 4.5 Gigatrim Variable Capacitor 7.15 nH, Coilcraft Inductor 18.5 nH, Coilcraft Inductor N-Type Panel Mount, Stripline, M/A-Com 5 Mil BeCu Shim (0.225 x 0.525) 0.219 x 0.080 Microstrip 0.150 x 0.080 Microstrip 0.851 x 0.080 Microstrip 0.125 x 0.220 Microstrip 0.123 x 0.220 Microstrip Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19 Z20 PCB 0.076 x 0.220 Microstrip 0.261 x 0.220 Microstrip 0.220 x 0.630 x 0.200 Taper 0.240 x 0.630 Microstrip 0.060 x 0.630 Microstrip 0.067 x 0.630 Microstrip 0.233 x 0.630 Microstrip 0.630 x 0.220 x 0.200 Taper 0.200 x 0.220 Microstrip 0.055 x 0.220 Microstrip 0.088 x 0.220 Microstrip 0.226 x 0.220 Microstrip 0.868 x 0.080 Microstrip 0.129 x 0.080 Microstrip 0.223 x 0.080 Microstrip Etched Circuit Board, Glass, Teflon r = 2.55, 30 Mils Figure 1. 865-895 MHz Broadband Test Circuit Schematic B1 B3 C8 B2 C6 C11 C3 C4 C16 C5 WB2 L2 CUTOUT L1 V DD C19 C17 C18 C9 C1 WB1 C7 VGG C15 C12 C14 C10 C13 MRF9085 Figure 2. 865-895 MHz Broadband Test Circuit Layout MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF9085 MRF9085S 5.2-423 18 Gps 17 h 45 40 VDD = 26 Vdc IDQ = 700 mA Pout = 90 Watts (PEP) Two-Tone, 100 kHz Tone Spacing 16 15 35 -28 -30 14 13 12 IMD -32 -34 VSWR 11 -36 860 865 870 875 880 885 f, FREQUENCY (MHz) 890 895 2.00 1.75 1.50 VSWR 50 IMD, INTERMODULATION DISTORTION (dBc) G ps , POWER GAIN (dB) 19 h , DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS 1.25 1.00 900 Gps 40 20 15 h 0 13 VDD = 26 Vdc IDQ = 700 mA f1 = 880.0 MHz f2 = 880.1 MHz 11 9 7 -20 -40 IMD -60 10 100 Pout, OUTPUT POWER (WATTS) PEP 1 -10 -20 -40 7th Order -50 -60 -70 50 17 16 40 15 30 VDD = 26 Vdc IDQ = 700 mA f = 880 MHz Single Tone 12 1 20 10 100 Pout, OUTPUT POWER (WATTS) CW AVG. 10 100 40 Gps 20 h VDD = 26 Vdc IDQ = 700 mA f = 880 MHz 15 0 -20 13 -40 11 750 kHz 10 9 0 7 -60 1.98 MHz -80 1 10 Pout, OUTPUT POWER (WATTS) AVG. Figure 6. Power Gain, Efficiency versus Output Power MRF9085 MRF9085S 5.2-424 Gps, POWER GAIN (dB) 17 h, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 19 h 1 Figure 5. Intermodulation Distortion Products versus Output Power 60 13 5th Order Pout, OUTPUT POWER (WATTS) PEP Gps 14 3rd Order -30 Figure 4. Power Gain, Efficiency, IMD versus Output Power 18 VDD = 26 Vdc IDQ = 700 mA f1 = 800.0 MHz f2 = 800.1 MHz h, DRAIN EFFICIENCY (%) & ACPR (dB) G ps , POWER GAIN (dB) 17 IMD, INTERMODULATION DISTORTION (dBc) 60 19 h , DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) Figure 3. Class AB Broadband Circuit Performance Figure 7. Power Gain, Efficiency, ACPR versus Output Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA f = 865 MHz Zin 895 MHz 895 MHz Zo = 10 ZOL* f = 865 MHz VDD = 26 V, IDQ = 700 mA, Pout = 90 W PEP f MHz Zin ZOL* Zin 865 1.35 + j1.92 1.26 + j0.15 880 1.33 + j1.66 1.26 + j0.10 895 1.28 + j1.30 1.21 + j0.20 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Note: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Input Matching Network Output Matching Network Device Under Test Z in Z * OL Figure 8. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF9085 MRF9085S 5.2-425 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF9180 MRF9180S The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies in the 865 - 895 MHz band. The high gain and broadband performance of these devices makes them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. * Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 2 700 mA IS-97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power -- 40 Watts Power Gain -- 17 dB Efficiency -- 26% Adjacent Channel Power - 750 kHz: -45.0 dBc @ 30 kHz BW 1.98 MHz: -60.0 dBc @ 30 kHz BW * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Ease of Design for Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 170 Watts (CW) Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters 880 MHz, 170 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 375D-01, STYLE 2 (MRF9180) CASE 375E-01, STYLE 2 (MRF9180S) MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS + 15, -0.5 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 388 2.22 Watts W/C Storage Temperature Range Tstg - 65 to +200 C TJ 200 C Operating Junction Temperature ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Typical) Machine Model M1 (Typical) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.45 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 2 MRF9180 MRF9180S 5.2-426 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0) IDSS -- -- 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 ) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) VGS(th) 2 2.9 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 700 mAdc) VGS(Q) -- 3.7 -- Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) -- 0.19 0.5 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 6 Adc) gfs -- 6 -- S Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Coss -- 77 -- pF Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Crss -- 3.8 -- pF Gps 16 17.5 -- dB 35 39 -- % IMD -- -31 -28 dBc IRL 9 15 -- dB Gps -- 17.5 -- dB -- 38.5 -- % IMD -- -31 -- dBc IRL -- 13 -- dB P1dB -- 170 -- W OFF CHARACTERISTICS (1) ON CHARACTERISTICS (1) DYNAMIC CHARACTERISTICS (1) FUNCTIONAL TESTS (In Motorola Test Fixture) (2) Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 700 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 f1 = 880.0 MHz, f2 = 880.1 MHz) 700 mA, 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 f1 = 880.0 MHz, f2 = 880.1 MHz) 700 mA, Input Return Loss (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 f1 = 880.0 MHz, f2 = 880.1 MHz) 700 mA, Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 700 mA, f1 = 865.0 MHz, f2 = 865.1 MHz) Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 f1 = 865.0 MHz, f2 = 865.1 MHz) 700 mA, 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 f1 = 865.0 MHz, f2 = 865.1 MHz) 700 mA, Input Return Loss (VDD = 26 Vdc, Pout = 170 W PEP, IDQ = 2 f1 = 865.0 MHz, f2 = 865.1 MHz) 700 mA, Power Output, 1 dB Compression Point (VDD = 26 Vdc, CW, IDQ = 2 700 mA, f1 = 880.0 MHz) (1) Each side of device measured separately. (2) Device measured in push-pull configuration. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF9180 MRF9180S 5.2-427 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) (continued) FUNCTIONAL TESTS (In Motorola Test Fixture) (2) (continued) Characteristic Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 170 W CW, IDQ = 2 f1 = 880.0 MHz) 700 mA, Drain Efficiency (VDD = 26 Vdc, Pout = 170 W CW, IDQ = 2 f1 = 880.0 MHz) 700 mA, Output Mismatch Stress (VDD = 26 Vdc, Pout = 170 W CW, IDQ = 2 700 mA, f = 880 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Symbol Min Typ Max Unit Gps -- 16.5 -- dB -- 55 -- % No Degradation In Output Power Before and After Test (1) Each side of device measured separately. (2) Device measured in push-pull configuration. MRF9180 MRF9180S 5.2-428 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA B2 VGG B6 B4 + + C16 C14 C13 C22 C26 Z18 Z20 Z22 Z2 L1 Z3 C3 Z4 Z12 C6 Z9 Z11 C2 Z5 Z14 COAX 3 Z16 C18 L4 C7 C4 Z7 C1 Z10 Z24 C17 C10 Z8 C28 C20 COAX 1 Z6 VDD + L3 R1 RF INPUT Z1 + C27 C8 Z15 Z13 C5 DUT Z26 Z28 Z17 Z29 C9 RF OUTPUT C29 Z27 R2 COAX 2 COAX 4 B1 VGG B3 + C11 Z19 C12 Z21 C15 Z23 Z25 C19 L2 B5 + C21 B1, B2, B5, B6 B3, B4 C1 C2, C3, C5, C6, C12, C14, C19, C20, C21, C22 C4, C9, C10, C15, C16 C7 C8 C11, C13 C17 C18 C23, C24, C26, C27 C25, C28 C29 Coax1, Coax2 Coax3, Coax4 L1, L2, L3 L4 R1, R2 Long Ferrite Beads, Surface Mount Short Ferrite Beads, Surface Mount 0.6-4.5 pF, Variable Capacitor 47 pF, Chip Capacitors, B Case 12 pF, Chip Capacitors, B Case 0.8-9.1 pF, Variable Capacitor 7.5 pF, Chip Capacitor, B Case 10 F, 35 V Tantalum Surface Mount Chip Capacitors 3.6 pF, Chip Capacitor, B Case 5.1 pF, Chip Capacitor, B Case 22 F, 35 V Tantalum Surface Mount Chip Capacitors 220 F, 50 V Electrolytic Capacitors 0.4-2.5 pF, Variable Capacitor 25 , Semi Rigid Coax, 70 mil OD, 1.05 Long 50 , Semi Rigid Coax, 85 mil OD, 1.05 Long 18.5 nH, Mini Spring Inductors, Coilcraft 12.5 nH, Mini Spring Inductor, Coilcraft 510 , 1/10 W Chip Resistors Z1 Z2 Z3 Z4, Z5, Z26, Z27 Z6, Z7 Z8, Z9 Z10, Z11 Z12, Z13 Z14, Z15 Z16, Z17 Z18, Z19 Z20, Z21 Z22, Z23 Z24, Z25 Z28 Z29 Board Material + C23 VDD + C24 C25 T-Line, 0.420 x 0.080 T-Line, 0.190 x 0.080 T-Line, 0.097 x 0.080 T-Line, 2.170 x 0.080 T-Line, 0.075 x 0.080 T-Line, 0.088 x 0.220 T-Line, 0.088 x 0.220 T-Line, 0.460 x 0.220 T-Line, 0.685 x 0.625 T-Line, 0.055 x 0.625 T-Line, 0.055 x 0.632 T-Line, 0.685 x 0.632 T-Line, 0.732 x 0.080 T-Line, 0.060 x 0.080 T-Line, 0.230 x 0.080 T-Line, 0.460 x 0.080 30 mil Teflon, r = 2.55, Copper Clad, 2 oz Cu Figure 1. 880 MHz Broadband Test Circuit Schematic MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF9180 MRF9180S 5.2-429 C13 VGG B6 MRF9180 900MHz PUSH PULL Rev 01 B4 B2 C26 C27 C28 C22 C14 Resistor C16 C10 R1 L3 L4 C4 C6 C5 C8 C7 C1 R2 Resistor C9 CUT OUT AREA C3 L1 C2 VDD C20 C17 C18 C15 C29 C19 L2 C12 C21 C11 VGG B1 B3 B5 C25 C23 C24 VDD Figure 2. 880 MHz Broadband Test Circuit Component Layout MRF9180 MRF9180S 5.2-430 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA G ps , POWER GAIN (dB) 16 45 40 h VDD = 26 Vdc Pout = 170 Watts (PEP) IDQ = 2 700 mA 15 35 14 13 -30 -32 IMD 12 -34 IRL Two-Tone Measurement 100 kHz Tone Spacing 11 10 860 865 870 875 880 885 f, FREQUENCY (MHz) 890 -36 -38 900 895 -10 -12 -14 -16 -18 IRL, INPUT RETURNLOSS (dB) Gps 17 IMD, INTERMODULATION DISTORTION (dBc) 50 18 h , DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS III III III III III III III IMD, INTERMODULATION DISTORTION (dBc) Figure 3. Class AB Broadband Circuit Performance 19 2000 mA 1700 mA 1400 mA 17 1100 mA 16 15 14 VDD = 26 Vdc f1 = 880 MHz f2 - 880.1 MHz 800 mA 1 -20 -30 880 mA 1100 mA -40 1400 mA Figure 4. Power Gain versus Output Power 1 2000 mA 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Intermodulation Distortion versus Output Power -10 -20 60 VDD = 26 Vdc IDQ = 2 700 mA f1 = 880 MHz f2 = 880.1 MHz 18 -30 -40 -50 3rd Order -60 -70 5th Order 1 50 Gps Gps, POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) 1700 mA -50 -60 10 100 Pout, OUTPUT POWER (WATTS) PEP VDD = 26 Vdc f1 = 880 MHz f2 = 880.1 MHz 7th Order 10 100 Pout, OUTPUT POWER (WATTS) PEP 16 40 14 30 12 20 10 h 8 0.1 Figure 6. Intermodulation Distortion Products versus Output Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA f1 = 880 MHz IDQ = 2 700 mA VDD = 26 Vdc 1 10 100 Pout, OUTPUT POWER (WATTS) PEP h, DRAIN EFFICIENCY (%) G ps , POWER GAIN (dB) 18 -10 10 0 1000 Figure 7. Power Gain and Efficiency versus Output Power MRF9180 MRF9180S 5.2-431 G ps , POWER GAIN (dB) 40 14 20 12 VDD = 26 Vdc IDQ = 2 700 mA f1 = 880 MHz f2 - 880.1 MHz h 10 8 6 -20 -40 IMD 1 0 10 100 -60 40 Gps 16 14 20 VDD = 26 Vdc IDQ = 2 700 mA f = 880 MHz IS-97, Pilot, Sync, Paging Traffic Codes 8 through 13 h 12 10 -20 -40 750 MHz 8 -60 1.98 MHz 6 1 10 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) AVG. Figure 8. Power Gain, Efficiency and IMD versus Output Power Figure 9. Power Gain, Efficiency and ACPR versus Output Power MRF9180 MRF9180S 5.2-432 0 -80 100 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA h, DRAIN EFFICIENCY (%) ACPR, ADJACENT CHANNEL POWER RATIO (dB) Gps 16 18 G ps , POWER GAIN (dB) 60 h, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) 18 Zo = 10 ZOL* Zin f = 895 MHz f = 895 MHz f = 865 MHz f = 865 MHz VDD = 26 V, IDQ = 2 x 700 mA, Pout = 170 W (PEP) f MHz Zin ZOL* Zin 865 2.95 + j0.00 3.83 + j1.02 880 2.48 + j0.67 3.55 + j1.38 895 2.44 + j1.18 3.34+ j1.51 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Note: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Input Matching Network Output Matching Network Device Under Test Z in Z * OL Figure 10. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF9180 MRF9180S 5.2-433 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Power Transistor MRF10005 . . . designed for CW and long pulsed common base amplifier applications, such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at high overall duty cycles. * Guaranteed Performance @ 1.215 GHz, 28 Vdc Output Power = 5.0 Watts CW Minimum Gain = 8.5 dB, 10.3 dB (Typ) 5.0 W, 960 - 1215 MHz MICROWAVE POWER TRANSISTOR NPN SILICON * RF Performance Curves given for 28 Vdc and 36 Vdc Operation * 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR * Hermetically Sealed Industry Standard Package * Silicon Nitride Passivated * Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration * Internal Input Matching for Broadband Operation * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. CASE 336E-02, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCES 55 Vdc Collector-Base Voltage VCBO 55 Vdc Emitter-Base Voltage VEBO 3.5 Vdc Collector Current -- Continuous (1) IC 1.25 mAdc Total Device Dissipation @ TA = 25C (1) Derate above 25C PD 25 143 Watt mW/C Storage Temperature Range Tstg - 65 to + 200 C TJ 200 C Symbol Max Unit RJC 7.0 C/W Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (2) NOTES: 1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF amplifiers. 2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. REV 6 MRF10005 5.2-434 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0) V(BR)CES 55 -- -- Vdc Collector-Base Breakdown Voltage (IC = 25 mAdc, IE = 0) V(BR)CBO 55 -- -- Vdc Emitter-Base Breakdown Voltage (IE = 0.5 mAdc, IC = 0) V(BR)EBO 3.5 -- -- Vdc ICBO -- -- 1.0 mAdc hFE 20 -- 100 -- Cob -- 7.0 10 pF Common-Base Amplifier Power Gain (VCC = 28 Vdc, Pout = 5.0 W, f = 1215 MHz) GPB 8.5 10.3 -- dB Collector Efficiency (VCC = 28 Vdc, Pout = 5.0 W, f = 1215 MHz) 45 55 -- % Load Mismatch (VCC = 28 Vdc, Pout = 5.0 W, f = 1215 MHz, VSWR = 10:1 All Phase Angles) OFF CHARACTERISTICS Collector Cutoff Current (VCB = 28 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 500 mAdc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS No Degradation in Output Power + 28 Vdc L1 Z10 C3 C4 + C5 - C2 Z9 D.U.T. RF INPUT Z2 Z4 Z1 Z5 Z6 C1, C2, C3 -- 220 pF 100 mil Chip Capacitor C4 -- 0.1 F C5 -- 47 F/50 V Electrolytic L1 -- 3 turn #18 AWG, 1/8 ID, 0.18 Long C1 Z8 Z7 Z3 RF OUTPUT Z1 - Z10 -- Microstrip, see details below Board Material -- 0.030 Glass Teflon, 2.0 oz. Copper, r = 2.55 0.20 0.050 0.25 0.57 0.70 0.40 0.13 0.050 0.37 0.08 0.375 0.25 0.25 0.40 1.45 0.70 0.20 0.30 0.40 0.00 0.000 0.650 1.125 0.30 0.275 0.080 1.385 2.365 0.16 0.660 1.91 1.96 0.20 0.50 2.365 0.90 Figure 1. Test Circuit MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF10005 5.2-435 9 8 8 Po, OUTPUT POWER (WATTS) Po, OUTPUT POWER (WATTS) 9 f = 960 MHz 7 6 1215 MHz 5 4 3 VCC = 28 Vdc 2 1 0 f = 960 MHz 7 1215 MHz 6 5 4 3 VCC = 36 Vdc 2 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Pin, INPUT POWER (WATTS) Pin, INPUT POWER (WATTS) Figure 2. Output Power versus Input Power Figure 3. Output Power versus Input Power Pout = 5 W, VCC = 28 V f = 960 MHz 1025 Zin 1090 Zo = 25 f MHz Zin OHMS ZOL* OHMS 960 1025 1090 1150 1215 6.5 + j8.5 10.0 + j7.0 11.2 + j4.9 10.8 + j2.0 7.8 + j0.0 7.4 - j18.9 7.2 - j17.4 7.1 - j16.3 7.15 - j14.3 7.8 - j11.2 1150 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency. 1215 1215 ZOL* 1150 1025 1090 f = 960 MHz Figure 4. Series Equivalent Input/Output Impedances MRF10005 5.2-436 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Long Pulse Power Transistor MRF10031 Designed for 960 - 1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode-S transmitters. * Guaranteed Performance @ 960 MHz, 36 Vdc Output Power = 30 Watts Peak Minimum Gain = 9.0 dB Min (9.5 dB Typ) 30 W (PEAK) 960 - 1215 MHz MICROWAVE POWER TRANSISTOR NPN SILICON * 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR * Hermetically Sealed Industry Standard Package * Silicon Nitride Passivated * Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration * Internal Input Matching for Broadband Operation CASE 376B-02, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCES 55 Vdc Collector-Base Voltage (1) VCBO 55 Vdc Emitter-Base Voltage VEBO 3.5 Vdc Collector Current -- Continuous (1) IC 3.0 Adc Total Device Dissipation @ TC = 25C (1), (2) Derate above 25C PD 110 0.625 Watts mW/C Storage Temperature Range Tstg - 65 to + 200 C TJ 200 C Symbol Max Unit RJC 1.6 C/W Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) NOTES: 1. Under pulse RF operating conditions. 2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case JC value measured @ 23% duty cycle) REV 6 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF10031 5.2-437 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0) V(BR)CES 55 -- -- Vdc Collector-Base Breakdown Voltage (IC = 25 mAdc, IE = 0) V(BR)CBO 55 -- -- Vdc Emitter-Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) V(BR)EBO 3.5 -- -- Vdc ICBO -- -- 2.0 mAdc hFE 20 -- -- -- OFF CHARACTERISTICS Collector Cutoff Current (VCB = 36 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 500 mAdc, VCE = 5.0 Vdc) FUNCTIONAL TESTS (10 s Pulses @ 50% duty cycle for 3.5 ms; overall duty cycle - 25%) Common-Base Amplifier Power Gain (VCC = 36 Vdc, Pout = 30 W Peak, f = 960 MHz) GPB 9.0 9.5 -- dB Collector Efficiency (VCC = 36 Vdc, Pout = 30 W Peak, f = 960 MHz) 40 45 -- % Load Mismatch (VCC = 36 Vdc, Pout = 30 W Peak, f = 960 MHz, VSWR = 10:1 All Phase Angles) No Degradation in Output Power C2 C3 + 36 Vdc - + C4 L1 Z5 RF OUTPUT RF INPUT Z1 Z3 Z2 Z6 Z4 Z7 Z8 Z9 C1 D.U.T. Z1 - Z9 -- Microstrip, See Details Board Material -- Teflon, Glass Laminate Dielectric Thickness = 0.030 r = 2.55, 2 Oz. Copper C1 -- 75 pF 100 Mil Chip Capacitor C2 -- 39 pF 100 Mil Chip Capacitor C3 -- 0.1 F C4 -- 1000 F, 50 Vdc, Electrolytic L1 -- 3 Turns #18 AWG, 1/8 ID, 0.18 Long 1.020 .218 BROADBAND FIXTURE .628 2.138 .223 .215 1.350 .354 .118 .083 .733 .780 .113 .669 2.050 .389 .100 .083 .083 1.210 .400 .128 Figure 1. Test Circuit MRF10031 5.2-438 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 100 POUT, OUTPUT POWER (WATTS) 90 80 f = 960 MHz 70 1090 60 1215 50 40 VCC = 36 VOLTS 30 20 10 1 2 3 4 5 6 7 PIN, INPUT POWER (WATTS) 8 9 10 Figure 2. Output Power versus Input Power 1025 1090 f = 960 MHz Zin 1155 1220 Zo = 10 1220 1090 1155 ZOL* 1025 f = 960 MHz Pout = 30 W Pk VCC = 36 V f MHz Zin Ohms ZOL* Ohms 960 2.05 + j5.24 22.9 - j2.35 1025 2.67 + j6.34 2.55 - j1.35 1090 24.0 + j7.14 2.52 - j0.95 1155 25.5 + j6.24 22.6 - j0.65 1220 25.7 + j4.34 22.8 - j0.35 ZOL* = Conjugate of the optimum load impedance into which the device operates at a given output power, voltage, and frequency. Figure 3. Series Equivalent Input/Output Impedances MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF10031 5.2-439 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Long Pulse Power Transistor MRF10120 Designed for 960 - 1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. * Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 8.0 dB Min., 9.2 dB (Typ) 120 W (PEAK), 960 - 1215 MHz MICROWAVE POWER TRANSISTOR NPN SILICON * 100% Tested for Load Mismatch at All Phase Angles with 3:1 VSWR * Hermetically Sealed Industry Standard Package * Silicon Nitride Passivated * Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration * Internal Input and Output Matching for Broadband Operation * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. CASE 355C-02, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCES 55 Vdc Collector-Base Voltage VCBO 55 Vdc Emitter-Base Voltage VEBO 3.5 Vdc Collector Current -- Peak (1) IC 15 Adc Total Device Dissipation @ TC = 25C (1), (2) Derate above 25C PD 380 2.17 Watts W/C Storage Temperature Range Tstg - 65 to + 200 C TJ 200 Symbol Max Unit RJC 0.46 C/W Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0) V(BR)CES 55 -- -- Vdc Collector-Base Breakdown Voltage (IC = 60 mAdc, IE = 0) V(BR)CBO 55 -- -- Vdc Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 3.5 -- -- Vdc ICBO -- -- 25 mAdc Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 36 Vdc, IE = 0) NOTES: (continued) 1. Under pulse RF operating conditions. 2. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. REV 7 MRF10120 5.2-440 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit hFE 20 -- -- -- ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) FUNCTIONAL TESTS (7.0 s Pulses @ 54% duty cycle for 3.4 ms; then off for 4.5 ms; overall duty cycle = 23%) Common-Base Amplifier Power Gain (VCC = 36 Vdc, Pout = 120 W Peak, f = 1215 MHz) GPB 8.0 9.2 -- dB Collector Efficiency (VCC = 36 Vdc, Pout = 120 W Peak, f = 1215 MHz) 50 55 -- % Load Mismatch (VCC = 36 Vdc, Pout = 120 W Peak, f = 1215 MHz, VSWR = 3:1 All Phase Angles) No Degradation in Output Power + 36 Vdc - + C2 Z5 C3 C4 L1 D.U.T. RF INPUT Z2 Z1 Z3 Z4 Z6 Z7 Z8 RF OUTPUT Z9 C1 C1 -- 270 pF 100 Mil Chip Capacitor C2 -- 220 pF 100 Mil Chip Capacitor C3 -- 0.1 F C4 -- 47 F 50 V Electrolytic L1 -- 3 Turns #18 AWG, 1/8 ID, 0.18 Long Z1 - Z9 -- Microstrip, See Details Board Material -- Teflon/Glass Laminate, Dielectric Thickness = 0.030, r = 2.55, 2 Oz. Copper 0.2 0.15 0.15 ALL DIMENSIONS IN INCHES 0.4 1.1 0.081 0.081 0.6 0.3 1.00 1.06 0.52 0.8 0.05 0.13 0.22 0.91 0.6 0.66 0.55 0.44 0.74 0.3 Figure 1. Test Circuit MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF10120 5.2-441 200 Pout , OUTPUT POWER (WATTS pk) Pout , OUTPUT POWER (WATTS pk) 200 150 150 100 100 f = 960 MHz VCC = 36 V 50 0 f = 1215 MHz VCC = 36 V 50 0 5 0 10 15 20 25 0 5 10 15 20 Pin, INPUT POWER (WATTS pk) Pin, INPUT POWER (WATTS pk) Figure 2. Output Power versus Input Power Figure 3. Output Power versus Input Power f = 960 MHz 1025 1215 1090 1150 VCC = 36 V, Pout = 120 W 1150 25 1215 f = 960 MHz 1090 1025 VCC = 36 V, Pout = 120 W f (MHz) Zin (OHMS) f (MHz) ZOL* (OHMS) 960 1025 1090 1150 1215 1.45 + j2.57 2.22 + j2.91 2.77 + j2.80 2.90 + j2.22 2.71 + j1.07 960 1025 1090 1150 1215 5.33 + j1.37 4.59 - j0.307 3.74 - j0.612 2.43 - j0.492 1.80 - j0.385 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency. Figure 4. Series Equivalent Input Impedances MRF10120 5.2-442 Figure 5. Series Equivalent Output Impedance MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF10150 . . . designed for 1025 - 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. * Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak Gain = 9.5 dB Min, 10.0 dB (Typ) 150 W (PEAK) 1025 - 1150 MHz MICROWAVE POWER TRANSISTOR NPN SILICON * 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR * Hermetically Sealed Package * Silicon Nitride Passivated * Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration * Internal Input and Output Matching * Characterized with 10 s, 10% Duty Cycle Pulses * Recommended Driver for a Pair of MRF10500 Transistors CASE 376B-02, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCES 65 Vdc Collector-Base Voltage VCBO 65 Vdc Emitter-Base Voltage VEBO 3.5 Vdc Collector Current -- Peak (1) IC 14 Adc Total Device Dissipation @ TC = 25C (1), (2) Derate above 25C PD 700 4.0 Watts W/C Storage Temperature Range Tstg - 65 to + 200 C TJ 200 C Symbol Max Unit RJC 0.25 C/W Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) NOTES: 1. Under pulse RF operating conditions. 2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case JC value measured @ 10 s, 10%.) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF10150 5.2-443 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0) V(BR)CES 65 -- -- Vdc Collector-Base Breakdown Voltage (IC = 60 mAdc, IE = 0) V(BR)CBO 65 -- -- Vdc Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 3.5 -- -- Vdc ICBO -- -- 25 mAdc hFE 20 -- -- -- Common-Base Amplifier Power Gain (VCC = 50 Vdc, Pout = 150 W Peak, f = 1090 MHz) GPB 9.5 10 -- dB Collector Efficiency (VCC = 50 Vdc, Pout = 150 W Peak, f = 1090 MHz) 40 -- -- % Load Mismatch (VCC = 50 Vdc, Pout = 150 W Peak, f = 1090 MHz, VSWR = 10:1 All Phase Angles) OFF CHARACTERISTICS Collector Cutoff Current (VCB = 36 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) FUNCTIONAL TESTS No Degradation in Output Power C2 Z5 C3 C4 + - + L1 D.U.T. C1 RF INPUT Z1 Z2 Z3 Z4 Z6 Z7 Z8 RF OUTPUT Z9 Z1-Z9 -- Microstrip, See Details Board Material -- Teflon Glass Laminate Dielectric Thickness = 0.030 r = 2.55, 2 Oz. Copper C1 -- 82 pF 100 Mil Chip Capacitor C2 -- 39 pF 100 Mil Chip Capacitor C3 -- 0.1 F C4 -- 100 F, 100 Vdc, Electrolytic L1 -- 3 Turns #18 AWG, 1/8 ID, 0.18 Long .625 .275 .15 .09 .081 .081 1.803 .39 1.383 .081 .625 .522 .100 1.751 .081 .583 .081 .787 .37 .363 .489 0.943 .173 .34 .334 1.0 .081 Figure 1. Test Circuit MRF10150 5.2-444 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA POUT, OUTPUT POWER (WATTS) 220 180 140 100 60 f = 1090 MHz VCC = 50 V 20 0 0 2 4 6 8 10 12 14 16 18 20 22 24 PIN, INPUT POWER (WATTS) Figure 2. Output Power versus Input Power f = 1030 MHz 1060 Zin 1120 1090 Zo = 10 1150 ZOUT (ZOL*) 1150 1120 f = 1030 MHz 1060 1090 POUT = 150 W Pk VCC = 50 V f MHz Zin OHMS ZOL* (ZOUT) OHMS 1030 3.8 + j3.5 4.6 + j0.7 1060 4.0 + j3.3 4.6 + j0.3 1090 4.2 + j3.0 4.1 - j1.0 1120 4.4 + j2.3 3.8 - j0.8 1150 4.1 + j1.8 3.6 - j0.3 ZOL* is the conjugate of the optimum load impedance into which the device operates at a given output power voltage and frequency. Figure 3. Series Equivalent Input/Output Impedances MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF10150 5.2-445 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF10350 Designed for 1025 - 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. * Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) 350 W (PEAK) 1025 - 1150 MHz MICROWAVE POWER TRANSISTOR NPN SILICON * 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR * Hermetically Sealed Package * Silicon Nitride Passivated * Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration * Internal Input and Output Matching * Characterized using Mode-S Pulse Format CASE 355E-01, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCES 65 Vdc Collector-Base Voltage VCBO 65 Vdc Emitter-Base Voltage VEBO 3.5 Vdc Collector Current -- Peak (1) IC 31 Adc Total Device Dissipation @ TC = 25C (1), (2) Derate above 25C PD 1590 9.1 Watts W/C Storage Temperature Range Tstg - 65 to + 200 C TJ 200 C Symbol Max Unit RJC 0.11 C/W Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) NOTES: 1. Under pulse RF operating conditions. 2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst Case JC measured using Mode-S pulse train, 128 s burst 0.5 s on, 0.5 s off repeating at 6.4 ms interval.) REV 1 MRF10350 5.2-446 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0) V(BR)CES 65 -- -- Vdc Collector-Base Breakdown Voltage (IC = 60 mAdc, IE = 0) V(BR)CBO 65 -- -- Vdc Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 3.5 -- -- Vdc ICBO -- -- 25 mAdc hFE 20 -- -- -- Common-Base Amplifier Power Gain (VCC = 50 Vdc, Pout = 350 W Peak, f = 1090 MHz) GPB 8.5 9.0 -- dB Collector Efficiency (VCC = 50 Vdc, Pout = 350 W Peak, f = 1090 MHz) 40 -- -- % Load Mismatch (VCC = 50 Vdc, Pout = 350 W Peak, f = 1090 MHz, VSWR = 10:1 All Phase Angles) OFF CHARACTERISTICS Collector Cutoff Current (VCB = 36 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) FUNCTIONAL TESTS No Degradation in Output Power C2 L1 Z5 C3 C4 + - + D.U.T. C1 RF INPUT Z1 Z2 Z3 Z4 Z6 Z7 Z8 Z9 RF OUTPUT Z1-Z9 -- Microstrip, See Details Board Material -- Teflon, Glass Laminate Dielectric Thickness = 0.030 r = 2.55, 2 Oz. Copper C1 -- 75 pF 100 Mil Chip Capacitor C2 -- 39 pF 100 Mil Chip Capacitor C3 -- 0.1 F C4 -- 100 F, 100 Vdc, Electrolytic L1 -- 3 Turns #18 AWG, 1/8 ID, 0.18 Long .094 .589 .573 .156 .083 .170 .838 .130 .159 1.518 .571 .395 .594 1.685 .083 .396 .100 .402 .616 .803 .278 .382 .160 .258 .170 .394 .095 .364 Figure 1. Test Circuit MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF10350 5.2-447 POUT , OUTPUT POWER (WATTS) 500 400 300 200 f = 1090 MHz VCC = 50 V Pulse = Mode-S(1) 100 0 0 10 20 30 40 50 60 70 80 PIN, INPUT POWER (WATTS) (1) 128 s burst 0.5 s on, 0.5 s off (1) repeating at 6.4 ms interval. Figure 2. Output Power versus Input Power 1025 1050 Zin 1150 ZOL* 1125 1050 1090 Zo = 10 1125 1090 f = 1150 MHz f = 1025 MHz POUT = 350 W Pk VCC = 50 V f MHz Zin OHMS ZOL* (1) OHMS 1025 1.92 + j3.80 2.52 + j0.70 1050 2.44 + j3.92 2.18 + j0.85 1090 3.55 + j3.02 1.94 + j1.13 1125 4.11 + j2.27 1.80 + j1.22 1150 4.13 + j1.35 1.71 + j1.31 ZOL* is the conjugate of the optimum load impedance into which the device operates at a given output power voltage and frequency. Figure 3. Series Equivalent Input/Output Impedances MRF10350 5.2-448 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF10502 Microwave Pulse Power Transistor Designed for 1025 - 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. 500 W (PEAK) 1025 - 1150 MHz MICROWAVE POWER TRANSISTOR NPN SILICON * Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak Gain = 8.5 dB Min, 9.0 dB (Typ) * 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR * Hermetically Sealed Industry Package * Silicon Nitride Passivated * Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration * Internal Input and Output Matching * Characterized with 10 s, 1% Duty Cycle Pulses CASE 355J-02, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCES 65 Vdc Collector-Base Voltage VCBO 65 Vdc Emitter-Base Voltage VEBO 3.5 Vdc Collector Current -- Peak (1) IC 29 Adc Total Device Dissipation @ TC = 25C (1), (2) Derate above 25C PD 1460 8.3 Watts W/C Storage Temperature Range Tstg - 65 to + 200 C TJ 200 C Symbol Max Unit RJC 0.12 C/W Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) NOTES: 1. Under pulse RF operating conditions. 2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case JC value measured @ 32 s, 2%.) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF10502 5.2-449 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0) V(BR)CES 65 -- -- Vdc Collector-Base Breakdown Voltage (IC = 60 mAdc, IE = 0) V(BR)CBO 65 -- -- Vdc Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 3.5 -- -- Vdc ICBO -- -- 25 mAdc hFE 20 -- -- -- Common-Base Amplifier Power Gain (VCC = 50 Vdc, Pout = 500 W Peak, f = 1090 MHz) GPB 8.5 9.0 -- dB Collector Efficiency (VCC = 50 Vdc, Pout = 500 W Peak, f = 1090 MHz) 40 45 -- % Load Mismatch (VCC = 50 Vdc, Pout = 500 W Peak, f = 1090 MHz, VSWR = 10:1 All Phase Angles) OFF CHARACTERISTICS Collector Cutoff Current (VCB = 36 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) FUNCTIONAL TESTS No Degradation in Output Power C2 L1 Z5 C3 C4 + - + D.U.T. C1 RF INPUT Z1 Z2 Z3 Z4 Z6 Z7 Z8 Z9 RF OUTPUT Z1-Z9 -- Microstrip, See Details Board Material -- Teflon, Glass Laminate Dielectric Thickness = 0.030 r = 2.55, 2 Oz. Copper C1 -- 82 pF 100 Mil Chip Capacitor C2 -- 39 pF 100 Mil Chip Capacitor C3 -- 0.1 F C4 -- 100 F, 100 Vdc, Electrolytic L1 -- 3 Turns #18 AWG, 1/8 ID, 0.18 Long .700 .150 .160 .625 .081 .355 1.123 2.000 .650 1.725 .105 .081 .100 .216 .644 .081 1.309 .365 1.108 .500 0.140 Figure 1. Test Circuit MRF10502 5.2-450 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA POUT, OUTPUT POWER (WATTS) 600 450 300 f = 1090 MHz VCC = 50 Volts 150 0 15 30 45 60 75 100 115 PIN, INPUT POWER (WATTS) Figure 2. Output Power versus Input Power 1120 1150 ZOUT (ZOL*) 1090 1060 f = 1030 MHz f = 1030 MHz Zin 1150 Zo = 10 1060 1090 1120 POUT = 500 W Pk VCC = 50 V f MHz Zin OHMS ZOL* (ZOUT) OHMS 1030 55.3 + j2.25 62.6 + j1.89 1060 56.2 + j0.25 2.56 + j2.09 1090 55.2 - j1.45 2.12 + j2.29 1120 53.7 - j1.35 21.9 + j2.15 1150 3.15 - j1.35 91.6 + j1.62 ZOL* is the conjugate of the optimum load impedance into which the device operates at a given output power voltage and frequency. Figure 3. Series Equivalent Input/Output Impedances MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF10502 5.2-451 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16006 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large-signal, common base, Class-C CW amplifier applications in the range 1600 - 1640 MHz. 6.0 WATTS, 1.6 GHz RF POWER TRANSISTOR NPN SILICON * Specified 28 Volt, 1.6 GHz Class-C Characteristics Output Power = 6 Watts Minimum Gain = 7.4 dB, @ 6 Watts Minimum Efficiency = 40% @ 6 Watts * Characterized with Series Equivalent Large-Signal Parameters from 1500 MHz to 1700 MHz * Silicon Nitride Passivated * Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. CASE 395C-01, STYLE 2 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCES 60 Vdc Emitter-Base Voltage VEBO 4.0 Vdc Collector-Current IC 1.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 26 0.15 Watts W/C Storage Temperature Range Tstg - 65 to +150 C RJC 6.8 C/W THERMAL CHARACTERISTICS Thermal Resistance -- Junction to Case (1) (2) (1) Thermal measurement performed using CW RF operating condition. (2) Thermal resistance is determined under specified RF operating conditions by infrared measurement techniques. REV 2 MRF16006 5.2-452 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max 55 -- -- 55 -- -- 4.0 -- -- -- -- 2.5 20 -- 80 11 -- -- 7.4 -- -- 40 45 -- -- 8.0 -- Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 40 mAdc, VBE = 0) V(BR)CES Collector-Base Breakdown Voltage (IC = 40 mAdc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = 2.5 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCE = 28 Vdc, VBE = 0) Vdc Vdc Vdc ICES mAdc ON CHARACTERISTICS DC Current Gain (ICE = 0.2 Adc, VCE = 5.0 Vdc) hFE -- DYNAMIC CHARACTERISTICS Output Capacitance (VCB= 28 Vdc, f = 1.0 MHz) Cob pf FUNCTIONAL TESTS Common-Base Amplifier Power Gain (VCC = 28 Vdc, Pout = 6 Watts, f = 1600/1640 MHz) Gpe Collector Efficiency (VCC = 28 Vdc, Pout = 6 Watts, f = 1600/1640 MHz) Return Loss (VCC = 28 Vdc, Pout = 6 Watts, f = 1600/1640 MHz) IRL Output Mismatch Stress (VCC = 28 Vdc, Pout = 6 Watts, f = 1600 MHz, Load VSWR = 3:1 all phase angles at frequency of test) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA dB % dB No Degradation in Output Power MRF16006 5.2-453 L3 B1 L2 C1 28 Vdc R1 C2 C3 C4 L1 C5 Board Material - Teflon Glass Laminate Dielectric Thickness - 0.30, r = 2.55, 2.0 oz. Copper B1 C1, C5 C2 C3 Fair Rite Bead on #24 Wire 100 pF, B Case, ATC Chip Cap 0.1 F, Dipped Mica Cap 0.1 F, Chip Cap C4 L1, L2 L3 R1 47 F, 50 V, Electrolytic Cap 3 Turns, #18, 0.133 ID, 0.15 Long 9 Turns, #24 Enamel 82 , 1.0 W, Carbon Resistor Figure 1. MRF16006 Test Fixture Schematic f = 1.5 GHz 1.6 GHz 1.7 GHz Zo = 10 1.7 GHz 1.6 GHz Zin ZOL* f = 1.5 GHz VCC = 28 Vdc, Pout = 6 W f MHz Zin Ohms ZOL* Ohms 1500 6.28 + j 8.53 1.22 - j 1.37 1600 7.04 + j 9.00 1.58 - j 0.53 1700 9.55 + j 12.86 1.71 + j 0.39 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency. Figure 2. Series Equivalent Input/Output Impedance MRF16006 5.2-454 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Pout , OUTPUT POWER (WATTS) 12 10 f = 1.6 GHz 8 1.64 GHz 6 VCC = 28 Vdc 4 2 0 0.25 0.45 0.65 0.85 1.05 Pin, INPUT POWER (WATTS) 1.25 1.45 Figure 3. Output Power versus Input Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF16006 5.2-455 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16030 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large-signal, common base, Class-C CW amplifier applications in the range 1600 - 1640 MHz. 30 WATTS, 1.6 GHz RF POWER TRANSISTOR NPN SILICON * Specified 28 Volt, 1.6 GHz Class-C Characteristics Output Power = 30 Watts Minimum Gain = 7.5 dB, @ 30 Watts Minimum Efficiency = 40% @ 30 Watts * Characterized with Series Equivalent Large-Signal Parameters from 1500 MHz to 1700 MHz * Silicon Nitride Passivated * Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. CASE 395C-01, STYLE 2 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCES 60 Vdc Emitter-Base Voltage VEBO 4.0 Vdc Collector-Current IC 4.0 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 103 0.58 Watts C/W Storage Temperature Range Tstg - 65 to +150 C RJC 1.7 C/W THERMAL CHARACTERISTICS Thermal Resistance -- Junction to Case (1) (2) (1) Thermal measurement performed using CW RF operating condition. (2) Thermal resistance is determined under specified RF operating conditions by infrared measurement techniques. REV 3 MRF16030 5.2-456 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max 55 -- -- 55 -- -- -- -- -- -- 10 20 35 80 7.5 7.7 -- 40 45 -- 8.0 -- -- Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) V(BR)CES Collector-Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCE = 28 Vdc, VBE = 0) Vdc Vdc 4.0 Vdc ICES mAdc ON CHARACTERISTICS DC Current Gain (ICE = 1.0 Adc, VCE = 5.0 Vdc) hFE -- FUNCTIONAL TESTS Collector-Base Amplifier Power Gain (VCC = 28 Vdc, Pout = 30 Watts, f = 1600/1640 MHz) Gpe Collector Efficiency (VCC = 28 Vdc, Pout = 30 Watts, f = 1600/1640 MHz) Input Return Loss (VCC = 28 Vdc, Pout = 30 Watts, f = 1600/1640 MHz) IRL Output Mismatch Stress VCC = 28 Vdc, Pout = 30 Watts, f = 1600 MHz, Load VSWR = 3:1, All phase angles at frequency of test MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA dB % dB No Degradation in Output Power MRF16030 5.2-457 L3 B1 28 Vdc C1 C2 R1 C3 C4 L2 L1 C5 Board Material - Teflon Glass Laminate Dielectric Thickness = 0.30, r = 2.55, 2.0 oz. Copper B1 C1, C5 C2 C3 Fair Rite Bead on #24 Wire 100 pF, B Case, ATC Chip Cap 0.1 F, Dipped Mica Cap 0.1 F, Chip Cap C4 L1, L2 L3 R1 47 F, 50 V, Electrolytic 3 Turns, #18, 0.133 ID, 0.15 Long 9 Turns, #24 Enamel 82 , 1.0 W, Carbon Figure 1. MRF16030 Test Fixture Schematic f = 1.5 GHz 1.7 GHz ZOL* 1.6 GHz 1.6 GHz Zin 1.7 GHz f = 1.5 GHz Zo = 10 VCC = 28 Vdc, Pout = 30 W f MHz Zin Ohms ZOL* Ohms 1500 3.05 + j 4.88 2.66 + j 2.53 1600 4.32 + j 6.00 1.79 + j 2.80 1700 5.62 + j 5.79 1.51 + j 2.64 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency. Figure 2. Series Equivalent Input/Output Impedance MRF16030 5.2-458 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Pout , OUTPUT POWER (WATTS) 45 f = 1.6 GHz 40 1.64 GHz 35 30 25 VCC = 28 Vdc 20 15 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 Pin, INPUT POWER (WATTS) 8.0 8.5 9.0 Figure 3. Output Power versus Input Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF16030 5.2-459 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18060A MRF18060AS RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM1805 - 1880 MHz. * Typical GSM Performance, Full Frequency Band (1805 - 1880 MHz) Power Gain -- 13 dB (Typ) @ 60 Watts Efficiency -- 45% (Typ) @ 60 Watts * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Ease of Design for Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts (CW) Output Power * Excellent Thermal Stability 60 W, 1.80 - 1.88 GHz, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 465-04, STYLE 1 (MRF18060A) CASE 465A-04, STYLE 1 (MRF18060AS) MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS +15, -0.5 Vdc Total Device Dissipation @ TC 25C Derate above 25C PD 180 1.03 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Operating Junction Temperature ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 2 (Typical) Machine Model M3 (Typical) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.97 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 2 MRF18060A MRF18060AS 5.2-460 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0) IDSS -- -- 6 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) VGS(th) 2 -- 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 500 mAdc) VGS(Q) 2.5 3.9 4.5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) -- 0.27 -- Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs -- 4.7 -- S Input Capacitance (Including Input Matching Capacitor in Package) (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Ciss -- 160 -- pF Output Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Coss -- 740 -- pF Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Crss -- 2.7 -- pF 11.5 13 -- 43 45 -- 10 -- -- OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 Adc) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture) Common-Source Amplifier Power Gain @ 60 W (2) (VDD = 26 Vdc, IDQ = 500 mA, f = 1805 - 1880 MHz) Gps Drain Efficiency @ 60 W (2) (VDD = 26 Vdc, IDQ = 500 mA, f = 1805 - 1880 MHz) Input Return Loss (2) (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA, f = 1805 - 1880 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA VSWR = 10:1, All Phase Angles at Frequency of Tests) IRL dB % dB No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. (2) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1800 band, ensuring batch-to-batch consistency. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF18060A MRF18060AS 5.2-461 R2 R1 T1 Z6 VDD R3 C4 C1 C2 R5 Z1 Z2 Z4 Z5 RF OUTPUT Z7 C7 Z3 C6 C5 C1 C2, C4, C7 C3 C5 C6 C3 R4 VGG RF INPUT + DUT 100 nF, Chip Capacitor 1203 10 pF, Chip Capacitor 10 mF, 35 V Electrolytic Tantalum Capacitor 1.2 pF, Chip Capacitor 1.0 pF, Chip Capacitor R1, R3 R2, R4 R5 T1 Z1 to Z7 2.2 k, Chip Resistor 0805 2.7 k, Chip Resistor 0805 1.1 k, Chip Resistor 0805 BC847 Transistor SOT-23 Microstrip Transmission Lines Figure 1. 1805 - 1880 MHz Test Fixture Schematic VBIAS R2 R3 R1 VSUPPLY C3 C1 R4 C4 C2 T1 R5 C7 C6 A1 A2 C5 Ground Ground MRF18060 Figure 2. 1805 - 1880 MHz Test Fixture Component Layout MRF18060A MRF18060AS 5.2-462 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Vbias III III III C1 T1 T1 R1 R5 R2 Vsupply C2 C4 R3 T2 + C3 R4 C5 R6 RF INPUT TL1 TL2 TL6 TL3 TL4 C6 RF OUTPUT TL5 C7 C8 1 mF, Chip Capacitor 0805 100 nF, Chip Capacitor 0805 10 pF, ACCU-P Chip Capacitor 0805 10 mF, 35 V Tantalum Electrolytic Capacitor 1.8 pF, ACCU-P Chip Capacitor 0805 1 pF, ACCU-P Chip Capacitor 0805 C1 C2 C3, C5, C8 C4 C6 C7 TL7 R1 10 , Chip Resistor 0805 R2, R6 1 k, Chip Resistor 0805 R3 1.2 k, Chip Resistor 0805 R4 2.2 k, Chip Resistor 0805 R5 5 k, SMD Potentiometer T1 LP2951 Micro-8 Voltage Regulator T2 BC847 SOT-23 NPN Transistor Substrate = 0.5 mm Teflon Glass, r = 2.55 Figure 3. 1800 - 2000 MHz Demo Board Schematic Vbias I II II I I Ground C4 R1 C1 R2 R3 T1 R4 T2 R5 C2 C3 C7 C5 R6 MRF18060 II IIII II III II II II Vsupply C8 C6 II II I I II I II I I II II MRF18060 Figure 4. 1800 - 2000 MHz Demo Board Component Layout MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF18060A MRF18060AS 5.2-463 VDD = 26 V, IDQ = 500 mA, Pout = 60 Watts (CW) f MHz Zin Zin ZOL* 1700 0.60 + j2.53 2.27 + j3.44 1800 0.80 + j3.20 2.05 + j3.05 1900 0.92 + j3.42 1.90 + j2.90 2000 1.07 + j3.59 1.64 + j2.88 2100 1.31 + j4.00 1.29 + j2.99 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load at a given voltage, P1dB, gain, efficiency, bias current and frequency. Table 1. Series Equivalent Input and Output Impedance MRF18060A MRF18060AS 5.2-464 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 16 100 15 90 Pout , OUTPUT POWER (WATTS) IDQ = 750 mA 13 500 mA 12 11 300 mA 10 100 mA 9 VDD = 26 Vdc f = 1880 MHz 80 60 10 Pout, OUTPUT POWER (WATTS) 40 30 18 100 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 70 3W 60 50 VDD = 26 Vdc IDQ = 500 mA 1W 20 0.5 W 55 70 1880 1900 45 Pout 50 35 30 30 VDD = 26 Vdc IDQ = 500 mA f = 1880 MHz 20 1 2 3 4 Pin, INPUT POWER (WATTS) 14.5 -2 Gps -4 13.5 -6 13.0 -8 12.5 -10 12.0 -12 11.5 -14 IRL 10.5 10.0 1800 20 5 6 Figure 8. Output Power and Efficiency versus Input Power 0 11.0 25 15 0 15.0 14.0 40 40 Figure 7. Output Power versus Frequency G ps, POWER GAIN (dB) 50 h 60 0 1700 30 80 10 1860 1840 f, FREQUENCY (MHz) 28 60 0 1820 24 26 22 VDD, SUPPLY VOLTAGE (VOLTS) 90 10 1800 20 Figure 6. Output Power versus Supply Voltage Pin = 6 W 30 VDD = 26 Vdc IDQ = 500 mA 10 0 90 40 1W 20 Figure 5. Power Gain versus Output Power 80 2.5 W 50 8 1 Pin = 5 W 70 , EFFICIENCY (%) 14 1900 f, FREQUENCY (MHz) -16 VDD = 26 Vdc IDQ = 500 mA 2000 IRL, INPUT RETURN LOSS (dB) G ps, POWER GAIN (dB) TYPICAL CHARACTERISTICS (DATA TAKEN USING WIDEBAND DEMONSTRATION BOARD) -18 -20 2100 Figure 9. Wideband Gain and IRL (at Small Signal) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF18060A MRF18060AS 5.2-465 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18060B MRF18060BS RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN-PCS/cellular radio and WLL applications. Specified for GSM1930 - 1990 MHz. * GSM Performance, Full Frequency Band (1930 - 1990 MHz) Power Gain -- 13 dB (Typ) @ 60 Watts (CW) Efficiency -- 45% (Typ) @ 60 Watts (CW) * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Ease of Design for Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts (CW) Output Power * Excellent Thermal Stability 60 W, 1.90 - 1.99 GHz, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 465-04, STYLE 1 (MRF18060B) CASE 465A-04, STYLE 1 (MRF18060BS) MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS +15, -0.5 Vdc Total Device Dissipation @ TC > = 25C Derate above 25C PD 180 1.03 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Operating Junction Temperature ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 2 (Typical) Machine Model M3 (Typical) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.97 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MRF18060B MRF18060BS 5.2-466 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0) IDSS -- -- 6 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) VGS(th) 2 -- 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 500 mAdc) VGS(Q) 2.5 3.9 4.5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) -- 0.27 -- Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs -- 4.7 -- S Input Capacitance (Including Input Matching Capacitor in Package) (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Ciss -- 160 -- pF Output Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Coss -- 740 -- pF Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Crss -- 2.7 -- pF 11.5 13 -- 40 45 -- 10 -- -- OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 Adc) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture) Common-Source Amplifier Power Gain @ 60 W (2) (VDD = 26 Vdc, IDQ = 500 mA, f = 1930 - 1990 MHz) Gps Drain Efficiency @ 60 W (2) (VDD = 26 Vdc, IDQ = 500 mA, f = 1930 - 1990 MHz) Input Return Loss (2) (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA, f = 1930 - 1990 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA VSWR = 10:1, All Phase Angles at Frequency of Tests) dB % IRL dB No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. (2) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1900 band, ensuring batch-to-batch consistency. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF18060B MRF18060BS 5.2-467 Z5 VDD VGG R1 C3 R2 C7 Z4 Z6 Z7 RF OUTPUT C9 Z1 Z2 Z3 C8 C5 C4 C1, C3 C2 C4, C8 C5 C6 C2 C1 R3 RF INPUT + DUT 10 pF, 100B Chip Capacitor 10 mF, 35 V Electrolytic Tantalum Capacitor 1.2 pF, 100B Chip Capacitor 1.0 pF, 100B Chip Capacitor 2.2 pF, 100B Chip Capacitor C7, C9 R1, R2 R3 0.3 pF, 100B Chip Capacitor 10 k, Chip Resistor 0805 1.0 k, Chip Resistor 0805 PCB Teflon Glass Figure 1. 1930 - 1990 MHz Test Fixture Schematic VBIAS VSUPPLY C2 R1 C1 R2 C9 C4 A1 C3 C7 R3 C6 A2 C5 C8 Ground Ground MRF18060 Figure 2. 1930 - 1990 MHz Test Fixture Component Layout MRF18060B MRF18060BS 5.2-468 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Vbias III III III C1 T1 T1 R1 R5 R2 Vsupply C2 C4 R3 T2 + C3 R4 C5 R6 RF INPUT TL1 TL2 TL6 TL3 TL4 C6 RF OUTPUT TL5 C7 C8 1 mF, Chip Capacitor 0805 100 nF, Chip Capacitor 0805 10 pF, ACCU-P Chip Capacitor 0805 10 mF, 35 V Tantalum Electrolytic Capacitor 1.8 pF, ACCU-P Chip Capacitor 0805 1 pF, ACCU-P Chip Capacitor 0805 C1 C2 C3, C5, C8 C4 C6 C7 TL7 R1 10 , Chip Resistor 0805 R2, R6 1 k, Chip Resistor 0805 R3 1.2 k, Chip Resistor 0805 R4 2.2 k, Chip Resistor 0805 R5 5 k, SMD Potentiometer T1 LP2951 Micro-8 Voltage Regulator T2 BC847 SOT-23 NPN Transistor Substrate = 0.5 mm Teflon Glass, r = 2.55 Figure 3. 1800 - 2000 MHz Demo Board Schematic Vbias I II II I I Ground C4 R1 C1 R2 R3 T1 R4 T2 R5 C2 C3 C7 C5 R6 MRF18060 II IIII II III II II II Vsupply C8 C6 II II I I II I II I I II II MRF18060 Figure 4. 1800 - 2000 MHz Demo Board Component Layout MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF18060B MRF18060BS 5.2-469 16 100 15 90 Pout , OUTPUT POWER (WATTS) IDQ = 750 mA 13 500 mA 12 11 300 mA 10 100 mA 9 VDD = 26 Vdc f = 1880 MHz 80 60 10 Pout, OUTPUT POWER (WATTS) 40 30 18 100 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 70 3W 60 50 VDD = 26 Vdc IDQ = 500 mA 1W 20 0.5 W 55 70 1880 1900 Figure 7. Output Power versus Frequency 45 Pout 50 35 30 30 VDD = 26 Vdc IDQ = 500 mA f = 1880 MHz 20 1 2 3 4 Pin, INPUT POWER (WATTS) 20 5 6 Figure 8. Output Power and Efficiency versus Input Power 14.5 -2 Gps -4 13.5 -6 13.0 -8 12.5 -10 12.0 -12 11.5 -14 IRL 10.5 10.0 1800 25 15 0 0 11.0 40 40 15.0 14.0 G ps, POWER GAIN (dB) 50 h 60 0 1700 30 80 10 1860 1840 f, FREQUENCY (MHz) 28 60 0 1820 24 26 22 VDD, SUPPLY VOLTAGE (VOLTS) 90 10 1800 20 Figure 6. Output Power versus Supply Voltage Pin = 6 W 30 VDD = 26 Vdc IDQ = 500 mA 10 0 90 40 1W 20 Figure 5. Power Gain versus Output Power 80 2.5 W 50 8 1 Pin = 5 W 70 , EFFICIENCY (%) 14 1900 f, FREQUENCY (MHz) -16 VDD = 26 Vdc IDQ = 500 mA 2000 IRL, INPUT RETURN LOSS (dB) G ps, POWER GAIN (dB) TYPICAL CHARACTERISTICS (DATA TAKEN USING WIDEBAND DEMONSTRATION BOARD) -18 -20 2100 Figure 9. Wideband Gain and IRL (at Small Signal) MRF18060B MRF18060BS 5.2-470 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA VDD = 26 V, IDQ = 500 mA, Pout = 60 Watts (CW) f MHz Zin Zin ZOL* 1700 0.60 + j2.53 2.27 + j3.44 1800 0.80 + j3.20 2.05 + j3.05 1900 0.92 + j3.42 1.90 + j2.90 2000 1.07 + j3.59 1.64 + j2.88 2100 1.31 + j4.00 1.29 + j2.99 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load at a given voltage, P1dB, gain, efficiency, bias current and frequency. Table 1. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF18060B MRF18060BS 5.2-471 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for GSM and EDGE cellular radio applications. * GSM and EDGE Performances, Full Frequency Band Power Gain -- 13.5 dB (Typ) @ 90 Watts (CW) Efficiency -- 52% (Typ) @ 90 Watts (CW) * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Ease of Design for Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts (CW) Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters 1.80 - 1.88 GHz, 90 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETS CASE 465B-02, STYLE 1 (MRF18090A) CASE 465C-01, STYLE 1 (MRF18090AS) MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS +15, -0.5 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 250 1.43 Watts W/C Storage Temperature Range Tstg - 65 to +200 C TJ 200 C Operating Junction Temperature ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 2 (Typical) Machine Model M3 (Typical) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.7 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MRF18090A MRF18090AS 5.2-472 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0) IDSS -- -- 10 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0) IGSS -- -- 1 Adc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 750 mAdc) VGS(Q) 2.5 3.7 4.5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) -- 0.1 -- Vdc Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) gfs -- 7.2 -- S Crss -- 4.2 -- pF 12.0 13.5 -- 47 52 -- 10 -- -- OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 Adc) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) Common-Source Amplifier Power Gain @ 90 W (1) (VDD = 26 Vdc, IDQ = 750 mA, f = 1805 - 1880 MHz) Gps Drain Efficiency @ 90 W (1) (VDD = 26 Vdc, IDQ = 750 mA, f = 1805 - 1880 MHz) Input Return Loss (1) (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA, f = 1805 - 1880 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA VSWR = 10:1, All Phase Angles at Frequency of Tests) dB % IRL dB No Degradation In Output Power Before and After Test (1) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1800 band, ensuring batch-to-batch consistency. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF18090A MRF18090AS 5.2-473 R1 R2 T1 Z8 VDD R4 R3 C4 VGG + C5 C6 R5 C2 C1 C3 R6 RF INPUT Z3 Z1 Z4 Z5 R1 R2, R3, R6 R4 R5 C1, C3 C2 Z9 Z10 Z6 C8 C7 Z2 Z7 RF OUTPUT DUT W W W W m C4, C5 C6 C7, C8 T1 Z1 - Z10 PCB 2.2 k , Chip Resistor 0805 1.0 k , Chip Resistor 0805 10 k , Chip Resistor 0805 6.8 k , Chip Resistor 0805 1.0 F, Chip Capacitor 0805 1.0 nF, Chip Capacitor 0805 6.8 pF, 100B Chip Capacitor ATC 220 F, 50 V Electrolytic Capacitor 12 pF, 100B Chip Capacitor ATC BC847 SOT-23 Printed Microstrip Line Teflon Glass m Figure 1. 1.80 - 1.88 GHz Test Fixture Schematic C6 R3 R5 VBIAS VSUPPLY R2 R1 T1 R4 C3 WB2 C7 WB1 N1 Ground C4 C5 R6 C1 C2 N2 C8 MRF18090A Ground Figure 2. 1.80 - 1.88 GHz Test Fixture Component Layout MRF18090A MRF18090AS 5.2-474 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA III III III C2 C1 T1 T1 R1 VSUPPLY R6 R2 C5 + R5 R3 C3 C6 T2 R4 C4 C7 RF INPUT C9 TL4 TL1 RF OUTPUT TL3 TL2 C8 C10 C1, C3 C2 C4 C5 C6, C7 C8, C9, C10 1 mF, Chip Capacitor 0805 0.1 mF, Chip Capacitor 0805 1 nF, Chip Capacitor 0805 220 mF, 50 V Electrolytic Capacitor 8.2 pF, 100A Chip Capacitor 22 pF, 100A Chip Capacitor R1 10 , Chip Resistor 0805 R2, R3 1 k, Chip Resistor 0805 R4 2.2 k, Chip Resistor 0805 R5 10 k, Chip Resistor 0603 R6 5 k, SMD Potentiometer T1 LP2951 Micro-8 Voltage Regulator T2 BC847 SOT-23 NPN Transistor TL1 - TL4 Printed Transmission Lines Substrate = 0.5 mm Teflon Glass Figure 3. 1.80 - 1.88 GHz Demo Board Schematic VSUPPLY C1 R1 T 1 R2 R3 Ground C2 C5 R5 C3 R4 C8 R6 C4 II III I I I II III I I II III I MRF18090A I II I II I I II I II III I T2 C6 C7 C9 C10 MRF18090A Figure 4. 1.80 - 1.88 GHz Demo Board Component Layout MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF18090A MRF18090AS 5.2-475 TYPICAL CHARACTERISTICS 16 120 750 mA 14 500 mA 13 12 300 mA 11 VDD = 26 Vdc f = 1880 MHz Pin = 3.65 W 80 2W 60 40 1W 20 10 0 0.1 1.0 10 Pout, OUTPUT POWER (WATTS) 12 100 Figure 5. Power Gain versus Output Power 14 16 26 18 20 24 22 VDD, SUPPLY VOLTAGE (VOLTS) 28 120 90 Pout , OUTPUT POWER (WATTS) Pin = 3.65 W 80 70 2W 60 50 VDD = 26 Vdc IDQ = 750 mA 40 1W 30 20 10 0 60 100 50 h 80 40 Pout 60 30 20 40 VDD = 26 Vdc IDQ = 750 mA f = 1880 MHz 20 10 0 0 1.795 1.815 1.855 1.835 f, FREQUENCY (GHz) 32 30 Figure 6. Output Power versus Supply Voltage 100 Pout , OUTPUT POWER (WATTS) IDQ = 750 mA f = 1880 MHz 100 1.875 1.895 Figure 7. Output Power versus Frequency , EFFICIENCY (%) G ps, POWER GAIN (dB) Pout , OUTPUT POWER (WATTS) IDQ = 1000 mA 15 0 1 3 2 Pin, INPUT POWER (WATTS) 4 5 Figure 8. Output Power and Efficiency versus Input Power 15 0 G ps, POWER GAIN (dB) -5 -10 12 -15 IRL -20 9 VDD = 26 Vdc IDQ = 750 mA -25 IRL, INPUT RETURN LOSS (dB) Gps -30 6 1.75 1.80 1.85 f, FREQUENCY (MHz) 1.90 1.95 Figure 9. Wideband Gain and IRL (at Small Signal) MRF18090A MRF18090AS 5.2-476 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA VDD = 26 V, IDQ = 750 mA, Pout = 90 Watts (CW) f MHz Zin Zin ZOL* 1805 1.1 + j5.85 1.15 + j2.16 1880 1.56 + j6.75 1.13 + j2.6 1930 2.05 + j8.0 1.30 + j2.23 1990 2.3 + j7.3 0.82 + j2.90 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load at a given voltage, P1dB, gain, efficiency, bias current and frequency. Table 1. Large Signal Input and Output Impedance MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF18090A MRF18090AS 5.2-477 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up to 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for GSM and EDGE cellular radio applications. * GSM and EDGE Performances, Full Frequency Band Power Gain -- 13.5 dB (Typ) @ 90 Watts (CW) Efficiency -- 45% (Typ) @ 90 Watts (CW) * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Ease of Design for Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts (CW) Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters 1.90 - 1.99 GHz, 90 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETS CASE 465B-02, STYLE 1 (MRF18090B) CASE 465C-01, STYLE 1 (MRF18090BS) MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS +15, -0.5 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 250 1.43 Watts W/C Storage Temperature Range Tstg - 65 to +200 C TJ 200 C Operating Junction Temperature ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 2 (Typical) Machine Model M3 (Typical) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.7 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MRF18090B MRF18090BS 5.2-478 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0) IDSS -- -- 10 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0) IGSS -- -- 1 Adc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 750 mAdc) VGS(Q) 2.5 3.7 4.5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) -- 0.1 -- Vdc Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) gfs -- 7.2 -- S Crss -- 4.2 -- pF 12 13.5 -- 40 45 -- 10 -- -- OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 Adc) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) Common-Source Amplifier Power Gain @ 90 W (1) (VDD = 26 Vdc, IDQ = 750 mA, f = 1930 - 1990 MHz) Gps Drain Efficiency @ 90 W (1) (VDD = 26 Vdc, IDQ = 750 mA, f = 1930 - 1990 MHz) Input Return Loss (1) (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA, f = 1930 - 1990 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA VSWR = 10:1, All Phase Angles at Frequency of Tests) dB % IRL dB No Degradation In Output Power Before and After Test (1) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1900 band, ensuring batch-to-batch consistency. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF18090B MRF18090BS 5.2-479 R1 T1 R2 Z8 VDD R3 VGG C3 R4 R5 C1 Z7 Z9 Z4 Z5 DUT 1.0 mF, Chip Capacitor 0805 1.0 nF, Chip Resistor 0805 6.8 pF, 100B Chip Capacitor 220 mF, 50 V Electrolytic Capacitor 12 pF, 100B Chip Capacitor 2.2 k , Chip Resistor 0805 C1 C2 C3, C4 C5 C6, C7 R1 RF OUTPUT C7 Z6 C6 Z2 C5 Z10 Z3 Z1 C4 C2 R6 RF INPUT + W W R2, R3, R6 R4 R5 T1 Z1 - Z10 PCB 1.0 k , Chip Resistor 0805 10 k, Chip Resistor 0805 6.8 k, Chip Resistor 0805 BC847 SOT-23 Printed Microstrip Line Teflon Glass Figure 1. 1.93 - 1.99 MHz Test Fixture Schematic C5 R3 R5 VBIAS VSUPPLY R2 R1 T1 R4 R6 C3 C4 C1 C2 A2 A1 C6 Ground C7 MRF18090B Ground Figure 2. 1.93 - 1.99 GHz Test Fixture Component Layout MRF18090B MRF18090BS 5.2-480 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA III III III C2 C1 T1 T1 R1 VSUPPLY R6 R2 + C5 R5 R3 C3 C6 T2 R4 C4 C7 RF INPUT C9 TL4 TL1 RF OUTPUT TL3 TL2 C8 C10 C1, C3 C2 C4 C5 C6, C7 C8, C9, C10 1 mF, Chip Capacitor 0805 0.1 mF, Chip Capacitor 0805 1 nF, Chip Capacitor 0805 220 mF, 50 V Electrolytic Capacitor 8.2 pF, 100A Chip Capacitor 22 pF, 100A Chip Capacitor R1 10 , Chip Resistor 0805 R2, R3 1 k, Chip Resistor 0805 R4 2.2 k, Chip Resistor 0805 R5 10 k, Chip Resistor 0603 R6 5 k, SMD Potentiometer T1 LP2951 Micro-8 Voltage Regulator T2 BC847 SOT-23 NPN Transistor TL1 - TL4 Printed Transmission Lines Substrate = 0.5 mm Teflon Glass Figure 3. 1.93 - 1.99 GHz Demo Board Schematic VSUPPLY C1 R1 T 1 R2 R3 Ground C2 C5 R5 C3 R4 T2 C8 C7 C4 MRF18090B II II I I I II II I II II II R6 C6 C9 II I II I I II I II I I II II C10 MRF18090B Figure 4. 1.93 - 1.99 GHz Demo Board Component Layout MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF18090B MRF18090BS 5.2-481 TYPICAL CHARACTERISTICS 16 140 750 mA 14 13 500 mA 12 300 mA 11 VDD = 26 Vdc f = 1990 MHz IDQ = 750 mA f = 1990 MHz 120 Pin = 5 W 100 80 2W 60 40 1W 20 10 0 0.1 1 100 10 Pout, OUTPUT POWER (WATTS) 12 1000 Figure 5. Power Gain versus Output Power 14 16 26 18 22 20 24 VDD, SUPPLY VOLTAGE (VOLTS) 30 120 60 Pin = 5 W h Pout , OUTPUT POWER (WATTS) 100 80 2W 60 VDD = 26 Vdc IDQ = 750 mA 40 1W 20 100 50 Pout 80 40 60 30 40 20 VDD = 26 Vdc IDQ = 750 mA f = 1990 MHz 20 10 0 0 0 1.91 1.93 32 Figure 6. Output Power versus Supply Voltage 120 Pout , OUTPUT POWER (WATTS) 28 1.97 1.95 f, FREQUENCY (GHz) 1.99 2.01 , EFFICIENCY (%) G ps, POWER GAIN (dB) Pout , OUTPUT POWER (WATTS) IDQ = 1000 mA 15 0 Figure 7. Output Power versus Frequency 1 3 4 2 Pin, INPUT POWER (WATTS) 5 6 Figure 8. Output Power and Efficiency versus Input Power 16 0 -5 12 -10 IRL -15 10 -20 8 VDD = 26 Vdc IDQ = 750 mA 6 1.88 1.90 1.92 1.96 1.98 1.94 f, FREQUENCY (GHz) 2.00 IRL, INPUT RETURN LOSS (dB) G ps, POWER GAIN (dB) Gps 14 -25 2.02 2.04 Figure 9. Wideband Gain and IRL (at Small Signal) MRF18090B MRF18090BS 5.2-482 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA VDD = 26 V, IDQ = 750 mA, Pout = 90 Watts (CW) f MHz Zin Zin ZOL* 1805 1.1 + j5.85 1.15 + j2.16 1880 1.56 + j6.75 1.13 + j2.6 1930 2.05 + j8.0 1.30 + j2.23 1990 2.3 + j7.3 0.82 + j2.90 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load at a given voltage, P1dB, gain, efficiency, bias current and frequency. Table 1. Large Signal Input and Output Impedance MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF18090B MRF18090BS 5.2-483 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF19030 MRF19030S The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. * CDMA Performance @ 1990 MHz, 26 Volts IS-97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13 885 kHz -- -47 dBc @ 30 kHz BW 1.25 MHz -- -55 dBc @ 12.5 kHz BW 2.25 MHz -- -55 dBc @ 1 MHz BW Output Power -- 4.5 Watts (Avg.) Power Gain -- 13.5 dB Efficiency -- 17% * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Ease of Design for Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 30 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters 2.0 GHz, 30 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465E-02, STYLE 1 (MRF19030) CASE 465F-01, STYLE 1 (MRF19030S) MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Rating VDSS 65 Vdc Gate-Source Voltage VGS +15, -0.5 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 83.3 0.48 Watts W/C Storage Temperature Range Tstg - 65 to +200 C TJ 200 C Operating Junction Temperature ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 2 (Typical) Machine Model M3 (Typical) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 2.1 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 2 MRF19030 MRF19030S 5.2-484 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 Adc) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 300 mA) VGS(Q) 2 3.3 4.5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) -- 0.29 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 1 Adc) gfs -- 2 -- S Input Capacitance (Including Input Matching Capacitor in Package) (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Ciss -- 98.5 -- pF Output Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Coss -- 37 -- pF Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Crss -- 1.3 -- pF Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) Gps -- 13 -- dB Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) -- 36 -- % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) IMD -- -31 -- dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) IRL -- -13 -- dB Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) Gps 12 13 -- dB Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) 33 36 -- % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) IMD -- -31 -28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) IRL -- -13 -9 dB OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 A) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture) Output Mismatch Stress (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 300 mA, f = 1930 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF19030 MRF19030S 5.2-485 B1 VGG + B2 B4 + C1 R1 R2 + C2 C3 C4 C5 R4 C6 B6 R5 R6 VDD + + Z6 Z1 Z2 Z3 Z4 Z7 C11 Z9 Z8 C8 Z10 RF OUTPUT C13 Z5 L4 C12 MRF19030 DUT L3 B1 - B6 C1, C8 C2, C7 C3 C4 C5 C6 C11, C13 C12 L1 - L4 R1, R2 R3 R4 - R6 C7 L2 L1 RF INPUT B5 R3 Ferrite Bead, Fair Rite #2743019447 470 F, 63 V, Electrolytic Capacitor, Panasonic #ECEV1HV100R 0.10 F, RF Chip Capacitor, B Case, Kemet 5.1 pF, RF Chip Capacitor, B Case, ATC 5.1 pF, RF Chip Capacitor, B Case, ATC 22 F, 35 V, Tantalum Surface Mount Chip Capacitor, Sprague 91 pF, RF Chip Capacitor, B Case, ATC 10 pF, RF Chip Capacitor, B Case, ATC 0.4 - 2.5 pF, Variable Capacitor, Johanson Gigatrim 8.0 nH Inductors, 3 Turn, Coilcraft 12 , Fixed Film Chip Resistor, 0.08 x 0.13 3.75 , Fixed Film Chip Resistor, 0.08 x 0.13 10 , Fixed Film Chip Resistor, 0.08 x 0.13 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Board 0.595 x 0.080 Microstrip 0.600 x 0.080 Microstrip 0.480 x 0.080 Microstrip 0.280 x 0.325 Microstrip 0.200 x 0.510 Microstrip 0.200 x 0.510 Microstrip 0.280 x 0.325 Microstrip 0.480 x 0.080 Microstrip 0.530 x 0.080 Microstrip 0.720 x 0.080 Microstrip 0.030 Glass Teflon Arlon GX-0300-55-22, 2 oz. Cu Figure 1. MRF19030 Schematic C8 C1 R1 B1 C2 C7 C3 B4 R4 B5 R5 R2 B2 R3 C5 B6 R6 C6 C4 L1 L2 C11 C13 L3 L4 C12 MRF19030 Figure 2. MRF19030 Populated PC Board Layout Diagram MRF19030 MRF19030S 5.2-486 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA IRL -15 40 20 -20 VDD = 26 V IDQ = 300 mA, Pout = 30 Watts (PEP) Two-Tone Measurement, 100 kHz Tone Spacing -25 Gps 10 -30 IMD 0 1900 1960 1980 1940 f, FREQUENCY (MHz) 1920 2000 -35 2020 VDD = 26 V IDQ = 350 mA, f = 1960 MHz, Channel Spacing (Channel Bandwidth): 885 kHz (30 kHz), 1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz) 40 35 -50 2.25 MHz 25 885 kHz 20 1.25 MHz 15 Gps -80 10 CDMA 9 Channels Forward PILOT:0, PAGING:1, TRAFFIC:8-13, SYNC:32 -90 5 0 200 mA -40 300 mA IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) 8 10 2 6 4 Pout, OUTPUT POWER (WATTS Avg.) CDMA 400 mA -45 350 mA -50 300 mA -55 1.0 10 Pout, OUTPUT POWER (WATTS) PEP 100 VDD = 26 V, IDQ = 300 mA, f = 1960 MHz Two-Tone Measurement, 100 kHz Tone Spacing -30 3rd Order -50 5th Order 7th Order -60 -70 -80 1.0 10 Pout, OUTPUT POWER (WATTS) PEP 100 Figure 6. Intermodulation Distortion Products versus Output Power 15 -22 14 f = 1960 MHz IDQ = 300 mA, Pout = 30 Watts (PEP) Two-tone Measurement, 100 kHz Tone Spacing 13.5 G ps , POWER GAIN (dB) 400 mA 350 mA 300 mA 13 300 mA 200 mA -24 -26 Gps -28 -30 13 IMD -32 -34 12.5 VDD = 26 V, f = 1960 MHz Two-Tone Measurement, 100 kHz Tone Spacing 11 1.0 -100 12 -40 Figure 5. Intermodulation Distortion versus Output Power G ps , POWER GAIN (dB) -70 -20 VDD = 26 V, f = 1960 MHz Two-Tone Measurement, 100 kHz Tone Spacing -35 12 -60 Figure 4. CDMA ACPR, Power Gain and Drain Efficiency versus Output Power -25 14 -40 30 Figure 3. Class AB Broadband Circuit Performance -30 -30 10 -36 100 12 20 Pout, OUTPUT POWER (WATTS) PEP Figure 7. Power Gain versus Output Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 22 24 26 28 30 32 -38 34 VDD, DRAIN VOLTAGE (VOLTS) Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage MRF19030 MRF19030S 5.2-487 IMD, INTERMODULATION DISTORTION (dBc) 30 -20 45 ADJACENT CHANNEL POWER RATION (dB) -10 , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 50 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) TYPICAL CHARACTERISTICS Zo = 10 f = 1930 MHz f = 1930 MHz ZOL* f = 1990 MHz f = 1990 MHz Zin VDD = 26 V, IDQ = 300 mA, Pout = 30 Watts (PEP) f MHz ZOL* Zin 1930 10.57 + j7.69 5.81 + j5.01 1960 10.54 + j7.43 5.84 + j4.67 1990 10.47 + j7.21 5.84 + j4.35 Zin = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Note: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Input Matching Network Output Matching Network Device Under Test Z in Z * OL Figure 9. Series Equivalent Input and Output Impedance MRF19030 MRF19030S 5.2-488 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19060 MRF19060S RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier applications. * Typical CDMA Performance: 1960 MHz, 26 Volts IS-97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power -- 7.5 Watts Power Gain -- 12.5 dB Adjacent Channel Power -- 885 kHz: -47 dBc @ 30 kHz BW 1.25 MHz: -55 dBc @ 12.5 kHz BW 2.25 MHz: -55 dBc @ 1 MHz BW * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Ease of Design for Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 60 Watts (CW) Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters 1990 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 465-04, STYLE 1 (MRF19060) CASE 465A-04, STYLE 1 (MRF19060S) MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS +15, -0.5 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 180 1.03 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Operating Junction Temperature ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Typical) Machine Model M3 (Typical) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.97 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 2 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF19060 MRF19060S 5.2-489 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0) IDSS -- -- 6 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0) IGSS -- -- 1 Adc gfs -- 4.7 -- S Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) VGS(th) 2 -- 4 V Gate Quiescent Voltage (VDS = 26 Vdc, ID = 500 mAdc) VGS(Q) 2.5 3.9 4.5 V Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) -- 0.27 -- V Crss -- 2.7 -- pF Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) Gps 11 12.5 -- dB Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) 33 36 -- % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) IMD -- -31 -28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) IRL -- -12 -- dB P1dB -- 60 -- W OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 Adc) ON CHARACTERISTICS Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) Pout, 1 dB Compression Point (VDD = 26 Vdc, Pout = 60 W CW, f = 1990 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA, f = 1930 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. MRF19060 MRF19060S 5.2-490 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA R4 VGG + R3 R1 B2 + C1 C2 R2 C3 C4 C5 T9 T1 T2 T3 T4 T5 T6 T7 C6 C7 C8 T10 T11 RF INPUT B3 VDD + T12 T13 T14 T15 T17 T16 T18 RF OUTPUT C11 T8 C12 C10 C9 B2 - B3 C1 C2, C7 C3, C8 C4 C5 C6 C9 C10, C11 C12 R1 R2 R3 R4 T1 T2 T3 DUT Ferrite Bead, Fair Rite, 2743019447 10 F, 50 V Electrolytic, ECEV1HV100R Panasonic 1000 pF, B Case Chip Capacitor, 100B102JCA500X, ATC 0.10 F, B Case Chip Capacitor, CDR33BX104AKWS, Kemet 5.1 pF, B Case Chip Capacitor, 100B5R1JCA500X, ATC 6.2 pF, B Case Chip Capacitor, 100B6R2JCA500X, ATC 22 F, 35 V Tantalum, SMT, Sprague 0.8 pF - 8.0 pF, Variable Capacitor, Johanson Gigatrim 10 pF, B Case Chip Capacitor, 100B100JCA500X, ATC 0.4 pF - 2.5 pF, Variable Capacitor, Johanson Gigatrim 1 k, 1/4 W, Fixed Film Chip Resistor, 0.08 x 0.13 560 k, 1/4 W, Fixed Film Chip Resistor, 0.08 x 0.13 15 , 1/4 W, Fixed Film Chip Resistor, 0.08 x 0.13 10 , 1/4 W, Fixed Film Chip Resistor, 0.08 x 0.13 0.580 x 0.074 Microstrip 0.100 x 0.074 Microstrip 0.384 x 0.074 Microstrip T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 Board 0.152 x 0.140 Microstrip 0.090 x 0.102 Microstrip 0.245 x 0.217 Microstrip 0.090 x 0.737 Microstrip 0.530 x 0.941 Microstrip 1.010 x 0.050 Microstrip 1.060 x 0.050 Microstrip 0.446 x 1.137 Microstrip 0.152 x 0.567 Microstrip 0.183 x 0.220 Microstrip 0.100 x 0.338 Microstrip 0.480 x 0.142 Microstrip 0.140 x 0.080 Microstrip 0.173 x 0.080 Microstrip 0.420 x 0.080 Microstrip 0.030 Glass Teflon Arlon GX-0300-55-22, 2 oz Cu Figure 1. MRF19060 Schematic MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF19060 MRF19060S 5.2-491 35 -5 30 -10 IRL 25 15 Gps 10 0 1900 1920 -25 -30 IMD 5 -20 -35 1960 1980 1940 f, FREQUENCY (MHz) 2000 -40 2020 VDD = 26 V IDQ = 700 mA, f = 1960 MHz, CHANNEL SPACING (CHANNEL BANDWIDTH): 885 kHz (30 kHz), 1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz) 40 35 30 -50 25 20 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) 900 mA -45 -50 700 mA 500 mA -60 -65 0.1 15 Gps -80 10 CDMA 9 CHANNELS FORWARD PILOT:0, PAGING:1, TRAFFIC:8-13, SYNC:32 -90 5 4 1.0 10 Pout, OUTPUT POWER (WATTS) PEP 100 -30 -40 3rd Order -50 5th Order -60 7th Order -70 -80 0.1 10 0.1 100 -22 f = 1960 MHz IDQ = 500 mA, Pout = 60 WATTS (PEP) TWO-TONE MEASUREMENT, 100 kHz TONE SPACING 13 700 mA G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) 10 1.0 Pout, OUTPUT POWER (WATTS) PEP 13.5 900 mA 11 -100 20 Figure 5. Intermodulation Products versus Output Power 14 12 8 16 12 Pout, OUTPUT POWER (WATTS (Avg. CDMA)) VDD = 26 V IDQ = 700 mA, f = 1960 MHz TWO-TONE MEASUREMENT, 100 kHz TONE SPACING Figure 4. Intermodulation Distortion versus Output Power 13 -70 1.25 MHz -20 VDD = 26 V f = 1960 MHz TWO-TONE MEASUREMENT, 100 kHz TONE SPACING -40 -55 -60 885 kHz Figure 3. CDMA ACPR, Power Gain and Drain Efficiency versus Output Power -25 -35 -40 2.25 MHz Figure 2. Class AB Broadband Circuit Performance -30 -30 500 mA VDD = 26 V f = 1960 MHz TWO-TONE MEASUREMENT, 100 kHz TONE SPACING 1.0 10 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Power Gain versus Output Power MRF19060 MRF19060S 5.2-492 -24 -26 -28 Gps 12.5 -30 -32 IMD -34 12 -36 100 11.5 22 24 26 28 30 -38 32 VDD, DRAIN VOLTAGE (VOLTS) Figure 7. Power Gain and Intermodulation Distortion versus Supply Voltage MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA IMD, INTERMODULATION DISTORTION (dBc) 20 -15 VDD = 26 V IDQ = 500 mA, Pout = 60 WATTS (PEP) TWO-TONE MEASUREMENT, 100 kHz TONE SPACING -20 45 ADJACENT CHANNEL POWER RATIO (dB) 0 , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 40 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) TYPICAL CHARACTERISTICS f = 1930 MHz Zin Zo = 10 1990 MHz f = 1930 MHz ZOL* 1990 MHz VDD = 26 V, IDQ = 500 mA, Pout = 60 Watts (PEP) f MHz Zin ZOL* 1930 1.65 + j0.67 1.85 - j0.50 1960 1.64 + j0.45 1.89 - j0.74 1990 1.60 + j0.20 1.96 - j0.94 Zin = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Note: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Input Matching Network Output Matching Network Device Under Test Z in Z * OL Figure 8. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF19060 MRF19060S 5.2-493 TO GATE BIAS FEEDTHRU C1 C5 R1 R4 R3 C2 R2 C3 C4 T10 C7 T9 T7 C9 T1 C10 T3 T2 TO DRAIN BIAS FEEDTHRU C6 B2 B3 C8 T12 C12 C11 T4 T5 T6 T8 T11 T13 T14 T15 T16 T17 T18 MRF19060 Figure 9. MRF19060 Populated PC Board Layout Diagram MRF19060 MRF19060S 5.2-494 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19085 MRF19085S N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to 1. 9 t o 2. 0 G Hz . S u i ta b l e fo r T D MA , C D M A and mul ti c arri er ampl i fi er applications. * Typical 2-Carrier N-CDMA Performance for VDD = 26 Volts, IDQ = 850 mA, Pout = 18 Watts Avg., f1 = 1960 MHz, f2 = 1962.5 MHz IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured over a 30 kHz Bandwidth at f1 -885 Khz and f2 +885 kHz. Distortion Products Measured over 1.2288 MHz Bandwidth at f1 -2.5 MHz and f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Output Power = 18 Watts Avg. Power Gain = 13.0 dB Efficiency = 23% ACPR = -51 dB IM3 = -36.5 dBc * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Ease of Design for Gain and Insertion Phase Flatness * Capable of Handling 5:1 VSWR, @ 26 Vdc, 1.93 GHz, 90 Watts (CW) Output Power * Excellent Thermal Stability 1990 MHz, 90 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 465-04, STYLE 1 (MRF19085) CASE 465A-04, STYLE 1 (MRF19085S) MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS +15, -0.5 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 273 1.56 Watts W/C Storage Temperature Range Tstg - 65 to +200 C TJ 200 C Operating Junction Temperature ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Typical) Machine Model M3 (Typical) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.64 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF19085 MRF19085S 5.2-495 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0) IDSS -- -- 10 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 Adc) VGS(th) 2 -- 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 850 mAdc) VGS(Q) 2.5 3.5 4.5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) -- 0.18 0.210 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs -- 6 -- S Crss -- 3.6 -- pF OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 Adc) ON CHARACTERISTICS (DC) DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) 2-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carriers. Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF. Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz) Gps 12 13 -- dB Drain Efficiency (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz) 21 23 -- % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); IM3 measured over 1.2288 MHz bandwidth @ f1 -2.5 MHz and f2 = +2.5 MHz) IMD -- -36.5 -35 dBc Adjacent Channel Power Ratio (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); ACPR measured over 30 kHz bandwidth @ f1 -885 MHz and f2 =+885 MHz) ACPR -- -51 -48 dBc IRL -- -12 -9 dB Input Return Loss (VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 850 mA, f = 1930 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. MRF19085 MRF19085S 5.2-496 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 850 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) Gps -- 13 -- dB Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 850 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) -- 36 -- % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 850 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) IMD -- -31 -- dBc Input Return Loss (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 850 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) IRL -- -12 -- dB P1dB -- 90 -- W FUNCTIONAL TESTS (In Motorola Test Fixture) Pout, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 850 mA, f = 1990 MHz) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF19085 MRF19085S 5.2-497 VGG R3 R1 VDD B1 + R2 + C5 C4 C3 C2 C7 Z4 RF INPUT Z1 Z2 L1 C8 + C9 C10 + C11 C12 Z9 Z3 Z5 C1 Z6 Z7 RF OUTPUT Z8 C6 DUT Figure 1. 1930 - 1990 MHz 2-Carrier N-CDMA Test Circuit Schematic Table 1. 1930 - 1990 MHz 2-Carrier N-CDMA Test Circuit Component Designations and Values Part Description Value, P/N or DWG Manufacturer B1 Short Ferrite Bead 2743019447 Fair Rite C1 51 pF, Chip Capacitor 100B510JCA500X ATC C2, C7 5.1 pF, Chip Capacitors 100B5R1JCA500X ATC C3, C9 1000 pF, Chip Capacitors 100B102JCA500X ATC C4, C10 0.1 F, Chip Capacitors CDR33BX104AKWS Kemet C5 0.1 F, Tantalum Surface Mount Capacitor T491C105M050 Kemet C6 10 pF, Chip Capacitor 100B100JCA500X ATC C8 10 F, Tantalum Surface Mount Capacitor T495X106K035AS4394 Kemet C11, C12 22 F, Tantalum Surface Mount Capacitors T491X226K035AS4394 Kemet L1 1 Turn, 20 AWG, 0.100 ID N1, N2 Type N Flange Mounts R1 1.0 k, 1/8 W Chip Resistor R2 220 k, 1/8 W Chip Resistor R3 10 , 1/8 W Chip Resistor Z1 Transmission Line 0.750 x 0.0840 Z2 Transmission Line 1.090 x 0.0840 Z3 Transmission Line 0.400 x 1.400 Z4 Transmission Line 0.520 x 0.050 Z5 Transmission Line 0.540 x 1.133 Z6 Transmission Line 0.400 x 0.140 Z7 Transmission Line 0.555 x 0.0840 Z8 Transmission Line 0.720 x 0.0840 Z9 Transmission Line 0.560 x 0.070 Board 0.030 Glass Teflon GX-0300-55-22, r = 2.55 Keene PCB Etched Circuit Boards MRF19085 Rev. 4 CMR MRF19085 MRF19085S 5.2-498 Motorola 3052-1648-10 Omni Spectra MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA C8 C2 C7 R1 B1 C5 C1 C4 R3 C9 C10 C3 CUT OUT AREA R2 L1 C11 C12 C6 MRF19085 Rev. 4 Figure 2. 1930 - 1990 MHz 2-Carrier N-CDMA Test Circuit MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF19085 MRF19085S 5.2-499 f1 1.2288 MHz BW -10 -ACPR @ 30 kHz BW -30 +ACPR @ 30 kHz BW -40 -50 -60 -IM3 @ 1.2288 MHz BW -3.75 -2.50 -1.25 0.00 1.25 2.50 3.75 25 -35 20 -42 IM3 15 -49 G ps 10 -56 5 -63 ACPR 0 -70 0.5 1 10 30 f, FREQUENCY (MHz) Pout, OUTPUT POWER (WATTS Avg.) N-CDMA Figure 4. 2-Carrier N-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power 50 VDD = 26 V IDQ = 850 mA f1 = 1960 MHz 100 kHz Tone Spacing 30 3rd Order 20 5th Order 10 -60 , DRAIN EFFICIENCY (%) 40 -40 -50 -20 7th Order IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) -20 -30 -28 VDD = 26 V, IDQ = 850 mA f1 = 1958.75 MHz, f2 = 1961.25 MHz 1.2288 MHz Channel Bandwidth Peak/Avg. = 9.8 @ 0.01% Probability (CCDF) Figure 3. 2-Carrier N-CDMA Spectrum VDD = 26 V f = 1960 MHz 100 kHz Tone Spacing -25 -30 IDQ = 550 mA -35 700 mA -40 -45 1150 mA 1000 mA -50 850 mA 10 Figure 5. Intermodulation Distortion Products versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power and IDQ 22 IRL 0 -10 -20 VDD = 26 V Pout = 18 Watts Avg. IDQ = 850 mA -30 IM3 2-Carrier N-CDMA, 2.5 MHz Carrier Spacing 1.2288 MHz Channel Bandwidth Peak/Avg. = 9.8 @ 0.01% Probability) (CCDF) 16 14 -40 ACPR G ps 12 1930 100 Pout, OUTPUT POWER (WATTS) PEP 18 10 Pout, OUTPUT POWER (WATTS) PEP 24 20 4 1940 1950 1960 1970 1980 -50 -60 1990 14 54 G ps 12 VDD = 26 V IDQ = 850 mA f = 1960 MHz 10 40 8 33 6 26 4 19 2 P in 0 2 10 f, FREQUENCY (MHz) Pout, OUTPUT POWER (WATTS) Figure 7. 2-Carrier N-CDMA Broadband Performance Figure 8. CW Performance MRF19085 MRF19085S 5.2-500 47 12 5 100 140 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA , DRAIN EFFICIENCY (%) 4 -55 0 100 -70 , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 5.00 IM3 (dBc), ACPR (dBc), IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) -70 -5.00 +IM3 @ 1.2288 MHz BW 30 P in , INPUT POWER (WATTS), G ps , POWER GAIN (dB) (dBc) -20 f2 1.2288 MHz BW IM3 (dBc), ACPR (dBc) 0 , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) TYPICAL CHARACTERISTICS -27 -28 37 IMD 36 -29 35 -30 34 -31 33 24.5 25.0 25.5 26.0 26.5 27.0 27.5 IDQ = 1150 mA 13.5 1000 mA 850 mA 13.0 700 mA 12.5 550 mA VDD = 26 V f = 1960 MHz 100 kHz Tone Spacing 12.0 11.5 -32 28.0 4 10 VDD, DRAIN SUPPLY (V) 100 Pout, OUTPUT POWER (WATTS) Figure 9. Two-Tone Intermodulation Distortion and Drain Efficiency versus Drain Supply Figure 10. Two-Tone Power Gain versus Output Power 40 -5 35 -10 IRL 30 25 20 -15 VDD = 26 V Pout = 90 Watts (PEP) IDQ = 850 mA 100 kHz Tone Spacing -20 -25 IMD 15 -30 Gps 10 1920 1930 1940 1950 1960 1970 1980 1990 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 24.0 14.0 G ps , POWER GAIN (dB) G ps , POWER GAIN (dB),, DRAIN EFFICIENCY (%) , DRAIN EFFICIENCY (%) 38 IDQ = 850 mA f = 1960 MHz 100 kHz Tone Spacing IMD, INTERMODULATION DISTORTION (dBc) -26 39 -35 2000 f, FREQUENCY (MHz) Figure 11. Two-Tone Broadband Performance MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF19085 MRF19085S 5.2-501 f = 1990 MHz ZOL* Zin f = 1930 MHz f = 1990 MHz f = 1930 MHz Zo = 1 VDD = 26 V, IDQ = 850 mA, Pout = 18 W (Avg.) f MHz ZOL* Zin 1930 0.75 + j2.50 1.05 + j1.95 1960 0.70 + j2.40 1.10 + j1.85 1990 0.65 + j2.35 1.05 + j1.75 Zin = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Note: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Input Matching Network Output Matching Network Device Under Test Z in Z * OL Figure 12. Series Equivalent Input and Output Impedance MRF19085 MRF19085S 5.2-502 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19090 MRF19090S RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM, and multicarrier amplifier applications. * Typical CDMA Performance: 1990 MHz, 26 Volts IS-97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power -- 9 Watts Power Gain -- 10 dB Adjacent Channel Power -- 885 kHz: -47 dBc @ 30 kHz BW 1.25 MHz: -55 dBc @ 12.5 kHz BW 2.25 MHz: -55 dBc @ 1 MHz BW * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Ease of Design for Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 90 Watts (CW) Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters 1990 MHz, 90 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 465B-02, STYLE 1 (MRF19090) CASE 465C-01, STYLE 1 (MRF19090S) MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS +15, -0.5 Vdc Total Device Dissipation @ TC > = 25C Derate above 25C PD 270 1.54 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Operating Junction Temperature ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Typical) Machine Model M3 (Typical) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.65 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF19090 MRF19090S 5.2-503 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) IDSS -- -- 10 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0) IGSS -- -- 1 Adc gfs -- 7.2 -- S Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) VGS(th) 2.0 -- 4.0 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 750 mAdc) VGS(Q) 2.5 3.8 4.5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) -- 0.10 -- Vdc Crss -- 4.2 -- pF Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) Gps 10 11.5 -- dB Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) 33 35 -- % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) IMD -- -30 -28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz) IRL -- -12 -- dB P1dB -- 90 -- W OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 A) ON CHARACTERISTICS Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) Pout, 1 dB Compression Point (VDD = 26 Vdc, Pout = 90 W CW, f = 1990 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 750 mA, f = 1930 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. MRF19090 MRF19090S 5.2-504 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA VGG + B1 B3 + B2 + + C13 B4 C14 + C19 C9 C10 C8 C7 L1 C5 C6 C11 C12 + + C15 VDD + C16 C17 L2 R1 MRF19090 RF INPUT Z1 Z2 Z3 Z4 C2 Z5 Z6 Z7 C3 DUT C1 Z9 Z8 RF OUTPUT C4 C18 R2 B1 - B4 B2 - B3 C1, C18 C2, C5, C8 C3 C4 C6, C7 C9, C12 C10, C11 C13, C17 C14, C16 C15, C19 2 Ferrite Beads, Round, Ferroxcube 56-590-65-3B Ferrite Bead, Surface Mount Ferrite Bead, Ferroxcube 0.4 - 2.5 pF, Gigatrim Variable Capacitors, Johanson 27285 10 pF, ATC RF Chip Capacitors, Case "B", 100B100CCA500X 12 pF, ATC RF Chip Capacitors, Case "B", 100B120CCA500X 0.3 pF, ATC RF Chip Capacitors, Case "B", 100B0R3CCA500X 120 pF, ATC RF Chip Capacitors, Case "B", 100B12R1CCA500X 0.1 F, Chip Capacitor, CDR33BX104AKWS, KEMET 1000 pF, ATC RF Chip Capacitors, Case "B", 100B102JCA50X 22 F, 35 V Tantalum Surface Mount Electrolytic Chip Capacitor, T491X226K035AS4394, KEMET 10 F, 35 V Tantalum Surface Mount Electrolytic Chip Capacitor, T495X106K035AS4394, KEMET 1 F, 35 V Tantalum Surface Mount Electrolytic Chip Capacitor, T495X105K035AS4394, KEMET L1, L2 8 Turns, #26 AWG, 0.085 OD, 0.330 Long, Copper Wire R1, R2 270 , 1/4 W Chip Resistor, Garrett Instruments RM73B2B271JT Z1 ZO = 50 Ohms Z2 ZO = 50 Ohms, Lambda = 0.123 Z3 ZO = 15.24 Ohms, Lambda = 0.0762 Z4 ZO = 10.11 Ohms, Lambda = 0.0392 Z5 ZO = 6.34 Ohms, Lambda = 0.0711 Z6 ZO = 5.02 Ohms, Lambda = 0.0476 Z7 ZO = 5.54 Ohms, Lambda = 0.0972 Z8 ZO = 50.0 Ohms, Lambda = 0.194 Z9 ZO = 50.0 Ohms Raw PCB Material 0.030 Glass Teflon, r = 2.55, 2 oz Copper, 3 x 5 Dimensions Figure 1. MRF19090 Test Circuit Schematic MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF19090 MRF19090S 5.2-505 35 -15 IRL 30 VDD = 26 V IDQ = 750 mA Pout = 90 WATTS (PEP) 100 kHz TONE SPACING 25 -20 -25 20 IMD -30 15 Gps 10 1900 1920 1960 1980 1940 f, FREQUENCY (MHz) 2000 -35 2020 30 -30 VDD = 26 V, IDQ = 1.1 AMPS, f = 1960 MHz, CHANNEL SPACING (CHANNEL BANDWIDTH): 885 kHz (30 kHz), 1.25 MHz -40 (12.5 kHz), 2.25 MHz (1 MHz) 25 885 kHz 35 2.25 MHz 20 1.25 MHz -70 Gps 10 0 5 15 25 10 20 Pout, OUTPUT POWER (WATTS (Avg.)) 30 -80 35 IMD, INTERMODULATION DISTORTION (dBc) -20 VDD = 26 V f = 1960 MHz 100 kHz TONE SPACING -30 550 mA -35 -40 750 mA -45 950 mA -50 -55 1 10 Pout, OUTPUT POWER (WATTS) PEP VDD = 26 V IDQ = 750 mA f = 1960 MHz 100 kHz TONE SPACING -30 -40 3rd Order -50 5th Order -60 7th Order -70 100 1 Figure 4. Third Order Intermodulation Distortion versus Output Power 10 Pout, OUTPUT POWER (WATTS) PEP 100 Figure 5. Intermodulation Products versus Output Power 13 -22 12.5 f = 1960 MHz, IDQ = 750 mA Pout = 90 WATTS (PEP) 100 kHz TONE SPACING 12.5 G ps , POWER GAIN (dB) 750 mA 550 mA 11 VDD = 26 V f = 1960 MHz 100 kHz TONE SPACING 10.5 1 10 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Power Gain versus Output Power MRF19090 MRF19090S 5.2-506 -26 12 950 mA 12 11.5 -24 Gps -28 -30 11.5 IMD -32 -34 11 -36 100 10.5 22 24 26 28 30 -38 32 VDD, DRAIN VOLTAGE (VOLTS) Figure 7. Third Order Intermodulation Distortion and Gain versus Supply Voltage MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA IMD, INTERMODULATION DISTORTION (dBc) -25 G ps , POWER GAIN (dB) -60 Figure 3. CDMA Performance ACPR, Gain and Drain Efficiency versus Output Power -20 10 9 CHANNEL FORWARD PILOT:0, PAGING:1, TRAFFIC:8-13, SYNC:32 15 Figure 2. Class AB Performance versus Frequency IMD, INTERMODULATION DISTORTION (dBc) -50 ADJACENT CHANNEL POWER RATIO (dB) , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) -10 40 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) TYPICAL CHARACTERISTICS ZOL* f = 1930 MHz 1990 MHz Zin 1990 MHz f = 1930 MHz Zo = 10 VDD = 26 V, IDQ = 750 mA, Pout = 90 Watts (PEP) f MHz Zin ZOL* Zin 1930 4.5 + j6.1 1.1 + j4.5 1960 4.4 + j6.0 1.1 + j4.4 1990 4.3 + j6.1 1.1 + j4.3 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Note: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Input Matching Network Output Matching Network Device Under Test Z in Z * OL Figure 8. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF19090 MRF19090S 5.2-507 C9 C10 RFB3 C11 C12 RFB2 RFB4 RFB1 C19 C13 C14 C6 C5 C7 C15 C8 C16 C17 L2 L1 R1 C2 CUTOUT C3 C4 C1 C18 R2 0.14 0.212 MRF19090 Figure 9. MRF19090 Populated PC Board Layout Diagram MRF19090 MRF19090S 5.2-508 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF19120 MRF19120S The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications at frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN-PCS/cellular radio and WLL applications. * CDMA Performance @ 1990 MHz, 26 Volts IS-97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13 885 kHz -- -47 dBc @ 30 kHz BW 1.25 MHz -- -55 dBc @ 12.5 kHz BW 2.25 MHz -- -55 dBc @ 1 MHz BW Output Power -- 15 Watts (Avg.) Power Gain -- 11.7 dB Efficiency -- 16% * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency, High Linearity * Integrated ESD Protection * Ease of Design for Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 26 Vdc, 1990 MHz, 120 Watts (CW) Output Power * S-Parameter Characterization at High Bias Levels * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters 1990 MHz, 120 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 375D-01, STYLE 2 (MRF19120) CASE 375E-01, STYLE 2 (MRF19120S) MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS +15, - 0.5 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 389 2.22 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Operating Junction Temperature ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Typical) Machine Model M3 (Typical) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.45 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 2 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF19120 MRF19120S 5.2-509 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc ) IGSS -- -- 1 Adc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0) IDSS -- -- 10 Adc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs -- 4.8 -- S Gate Threshold Voltage (VDS = 10 V, ID = 200 A) VGS(th) 2.5 3 3.8 Vdc Gate Quiescent Voltage (VDS = 26 V, ID = 500 mA) VGS(Q) 3 3.9 5 Vdc Drain-Source On-Voltage (VGS = 10 V, ID = 2 A) VDS(on) -- 0.38 0.5 Vdc Crss -- 2.8 -- pF 10.7 10.5 11.7 11.7 -- -- 30 34 -- -- -- -31 -31 -28 -27 IRL 9 12 -- dB Gps -- 11.7 -- dB -- 34 -- % IMD -- -31 -- dB IRL -- 14 -- dB P1dB -- 120 -- Watts Gps -- 11 -- dB OFF CHARACTERISTICS (1) Drain-Source Breakdown Voltage (VGS = 0, ID = 10 Adc) ON CHARACTERISTICS (1) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) (2) Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 1990.0 MHz, f2 = 1990.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 1990.0 MHz, f2 = 1990.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 1990.0 MHz, f2 = 1990.1 MHz) Gps 500 mA, MRF19120 MRF19120S IMD 500 mA, MRF19120 MRF19120S 500 mA, Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 1930.0 MHz, f2 = 1930.1 MHz) 500 mA, Drain Efficiency (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 1930.0 MHz, f2 = 1930.1 MHz) 500 mA, Intermodulation Distortion (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 1930.0 MHz, f2 = 1930.1 MHz) 500 mA, Input Return Loss (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 1930.0 MHz, f2 = 1930.1 MHz) 500 mA, Power Output, 1 dB Compression Point (VDD = 26 Vdc, CW, IDQ = 2 500 mA, f1 = 1990.0 MHz) MRF19120 MRF19120S 5.2-510 % 500 mA, Input Return Loss (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 1990.0 MHz, f2 = 1990.1 MHz) Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 f1 = 1990.0 MHz) dB dB 500 mA, MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Characteristic Drain Efficiency (VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 f1 = 1990.0 MHz) Symbol Min Typ Max Unit -- 45 -- % 500 mA, Output Mismatch Stress (VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 500 mA, f = 1990 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) No Degradation In Output Power Before and After Test (1) Each side of device measured separately. (2) Device measured in push-pull configuration. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF19120 MRF19120S 5.2-511 VDD + + + C31 C30 Z40 C17 C16 C14 C29 C15 R1 Z6 RF INPUT Z8 Z12 C3 Z14 Z16 Z18 Z41 Z42 RF OUTPUT C12 C13 L3 C7 Z24 R5 Z10 C35 C27 + Z4 C34 C28 + R3 C19 C33 + B1 VGG + C32 + Z26 Z30 Z32 Z34 C9 Z36 Z28 Z20 Z22 Z38 Z1 COAX1 Z2 DUT COAX2 Z7 L1 Z5 C1 C2 Z9 Z11 Z13 C4 Z15 Z17 Z19 C11 COAX4 Z21 Z23 Z25 R2 COAX3 C8 C5 L2 Z27 Z31 Z33 Z35 C10 Z37 Z29 Z39 R6 L4 C6 + C22 B2 VGG + + C20 C37 C36 + C25 R4 C39 C24 C23 C38 VDD C21 + C40 B1, B2 C1, C2 C3, C4, C9, C10 C5, C12 C6, C7 C8 C11 C13, C20, C29, C37 C14, C21, C28, C38 C15, C22, C31, C40 C16, C23, C33, C43 C17, C24, C32, C41 C19, C25 C27, C34, C36, C42 C30, C39 C35, C44 Coax1, Coax2 Coax3, Coax4 L1 L2 L3, L4 R1, R2 R3, R4 R5, R6 Z1 Ferrite Bead, Fair Rite 0.6 - 4.5 pF, Variable Capacitor, Johanson Gigatrim 10 pF, B Case Chip Capacitor, ATC 0.4 - 2.5 pF, Variable Capacitor, Johanson Gigatrim 2.0 pF, B Case Chip Capacitor, ATC 1.1 pF, B Case Chip Capacitor, ATC 0.1 pF, B Case Chip Capacitor, ATC 5.1 pF, B Case Chip Capacitor, ATC 91 pF, B Case Chip Capacitor, ATC 100 F, 50 V, Electrolytic Capacitor, Sprague 0.039 F, B Case Chip Capacitor, ATC 1000 pF, B Case Chip Capacitor, ATC 0.020 F, B Case Chip Capacitor, ATC 22 F, 35 V, Tantalum Surface Mount Chip Capacitor, Kemet 1.0 F, 35 V, Tantalum Surface Mount Chip Capacitor, Kemet 470 F, 63 V, Electrolytic Capacitor, Sprague 25 , Semi Rigid Coax, 70 mil OD, 1.05 Long 50 , Semi Rigid Coax, 85 mil OD, 1.05 Long 5.0 nH, Minispring Inductor, Coilcraft 8.0 nH, Minispring Inductor, Coilcraft 5.60 nH, Microspring Inductor, Coilcraft 1 k, Fixed Metal Film Resistor, 1/2 W, Dale 270 , Fixed Film Chip Resistor, 1/8 W, Dale 1.0 k, Fixed Film Chip Resistor, 1/8 W, Dale 0.150 x 0.080 Microstrip + + + C41 Z2 Z4, Z5 Z6, Z7 Z8, Z9 Z10, Z11 Z12, Z13 Z14, Z15 Z16, Z17 Z18, Z19 Z20, Z21 Z22, Z23 Z24, Z25 Z26, Z27 Z28, Z29 Z30, Z31 Z32, Z33 Z34, Z35 Z36, Z37 Z38, Z39 Z40 Z41 Z42 Board Material Connectors C42 C43 C44 0.320 x 0.080 Microstrip 1.050 x 0.080 Microstrip 0.120 x 0.080 Microstrip 0.140 x 0.080 Microstrip 0.610 x 0.080 Microstrip 0.135 x 0.080 Microstrip 0.130 x 0.080 Microstrip 0.300 x 0.350 Microstrip 0.150 x 0.500 Microstrip 0.075 x 0.500 Microstrip 0.330 x 0.500 Microstrip 0.100 x 0.550 Microstrip 0.175 x 0.550 Microstrip 0.045 x 0.550 Microstrip 0.190 x 0.325 Microstrip 0.080 x 0.325 Microstrip 0.515 x 0.080 Microstrip 0.020 x 0.080 Microstrip 0.565 x 0.080 Microstrip 0.100 x 0.080 Microstrip 0.470 x 0.080 Microstrip 0.100 x 0.080 Microstrip 0.03 Teflon, r = 2.55 Copper Clad, 2 oz. Cu N-Type Panel Mount, Stripline Figure 1. 1.93 - 1.99 GHz Broadband Test Circuit Schematic MRF19120 MRF19120S 5.2-512 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA C34 C35 + C19 VGG C15 C17 B1 C16 + C31 C28 + C30 C13 V DD C32 C33 C29 C27 C14 R3 R5 C7 L3 R1 C3 C1 C2 C9 C5 C11 L2 C8 L1 C10 C4 C12 R2 C6 R6 B2 + C24 C23 VGG C25 L4 C21 R4 C20 C36 C37 C39 C22 C38 + C40 C41 C43 V DD MRF19120 + C42 C44 Figure 2. MRF19120 Component Part Layout MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF19120 MRF19120S 5.2-513 TYPICAL CHARACTERISTICS 13 10 750 mA 10 9 VDD = 26 Vdc f1 = 1990.0 MHz f2 = 1990.1 MHz 500 mA 35 VDD = 26 Vdc, IDQ = 2 x 500 mA 9 Two-Tone, 100 kHz Tone Spacing Output Power = 120 W PEP 8 -28 7 -30 IMD 1.0 10 Pout, OUTPUT POWER (WATTS) PEP -32 1945 1930 100 Figure 3. Power Gain versus Output Power -20 VDD = 26 Vdc f1 = 1990.0 MHz f2 = 1990.1 MHz -30 -40 1100 mA 500 mA -50 1000 mA 750 mA 1500 mA 1300 mA -60 -70 0.1 1.0 10 Pout, OUTPUT POWER (WATTS) PEP -40 -50 3rd Order -60 5th Order -70 0.1 VDD = 26 Vdc, IDQ = 2 x 500 mA Two-Tone, 100 kHz Tone Spacing IMD 6 5 0.1 1.0 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 7. Power Gain, Efficiency, and IMD versus Output Power MRF19120 MRF19120S 5.2-514 10 -80 2 -20 -40 7 20 12 -60 0 9 40 0 VDD = 26 Vdc, IDQ = 2 x 750 mA, f = 1990 MHz CDMA 9 Channels Forward, Pilot:0, Paging1, Traffic:8-13, Sync:32 -20 8 885 kHz @ 30 kHz BW, 1.25 MHz @ 12.5 kHz BW, 2.25 MHz @ 1 MHz BW -40 6 2.25 MHz 885 kHz ACPR -60 4 1.25 MHz 20 100 Gps Gps , POWER GAIN (dB) 40 10 1.0 10 Pout, OUTPUT POWER (WATTS) PEP 14 , EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) 60 11 7th Order Figure 6. Intermodulation Distortion Products versus Output Power 80 Gps 1 1990 VDD = 26 Vdc IDQ = 2 x 500 mA f1 = 1990.0 MHz f2 = 1990.1 MHz -30 Figure 5. Intermodulation Distortion versus Output Power 12 1975 1.5 -20 100 13 1960 f, FREQUENCY (MHz) 2 Figure 4. Class AB Broadband Circuit Performance IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) -26 5 0.1 G ps , POWER GAIN (dB) -24 VSWR 6 8 8 40 , EFFICIENCY (%) ACPR (dB) 11 11 1100 mA 1000 mA 45 VSWR 12 G ps, POWER GAIN (dB) Gps , POWER GAIN (dB) 12 , EFFICIENCY (%) 1500 mA 1300 mA 50 Gps IMD, INTERMODULATION DISTORTION (dBc) 13 -80 0.1 1.0 10 100 Pout, OUTPUT POWER (WATTS) AVG. Figure 8. Power Gain, Efficiency, and ACPR versus Output Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 1930 MHz Zin f = 1990 MHz 1930 MHz Zo = 1 ZOL* f = 1990 MHz VDD = 26 V, IDQ = 2 f MHz Zin 500 mA, Pout = 120 Watts PEP ZOL* Zin 1930 1.64 + j2.6 3.9 + j1.7 1960 2.10 + j2.8 4.8 + j0.8 1990 2.10 + j1.4 4.9 + j0.3 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Input Matching Network Output Matching Network Device Under Test Z in Z * OL Figure 9. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF19120 MRF19120S 5.2-515 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF19125 MRF19125S RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1.9 to 2. 0 G Hz . S u i ta b l e fo r T D MA , C D M A a n d mul ti c arri er ampl i fi er applications. * Typical 2-Carrier N-CDMA Performance for VDD = 26 Volts, IDQ = 1300 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured over a 30 kHz Bandwidth at f1 -885 kHz and f2 +885 kHz. Distortion Products Measured over 1.2288 MHz Bandwidth at f1 -2.5 MHz and f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Output Power -- 24 Watts Avg. Power Gain -- 13.6 dB Efficiency -- 22% ACPR -- -51 dB IM3 -- -37.0 dBc * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Ease of Design for Gain and Insertion Phase Flatness * Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 125 Watts (CW) Output Power * Excellent Thermal Stability 1990 MHz, 125 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 465B-02, STYLE 1 (MRF19125) CASE 465C-01, STYLE 1 (MRF19125S) MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS +15, -0.5 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 330 1.89 Watts W/C Storage Temperature Range Tstg - 65 to +200 C TJ 200 C Operating Junction Temperature ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 2 (Typical) Machine Model M3 (Typical) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.53 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 0 MRF19125 MRF19125S 5.2-516 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0) IGSS -- -- 1 Adc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0) IDSS -- -- 10 Adc gfs -- 9 -- S Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) VGS(th) 2 -- 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 1300 mAdc) VGS(Q) 2.5 3.9 4.5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 3 Adc) VDS(on) -- 0.185 0.21 Vdc Crss -- 5.4 -- pF OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 Adc) ON CHARACTERISTICS Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) 2-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carriers. Peak/Avg = 9.8 dB @ 0.01% Probability on CCDF. Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) Gps 12 13.5 -- dB Drain Efficiency (VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) 19 22 -- % IMD -- -37 -35 dBc ACPR -- -51 -47 dBc Input Return Loss (VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz) IRL -- -13 -9 dB Output Mismatch Stress (VDD = 26 Vdc, Pout = 125 W CW, IDQ = 1300 mA, f = 1930 MHz, VSWR = 5:1, All Phase Angles at Frequency of Test) Intermodulation Distortion (VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; IM3 measured over 1.2288 MHz Bandwidth at f1 -2.5 MHz and f2 +2.5 MHz) Adjacent Channel Power Ratio (VDD = 26 Vdc, Pout = 24 W Avg, IDQ = 1300 mA, f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 = 1990 MHz; ACPR measured over 30 kHz Bandwidth at f1 -885 MHz and f2 +885 MHz) No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF19125 MRF19125S 5.2-517 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 125 W PEP, IDQ = 1300 mA, f1 = 1930 MHz, f2 = 1990 MHz, Tone Spacing = 100 kHz) Gps -- 13.5 -- dB Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 125 W PEP, IDQ = 1300 mA, f1 = 1930 MHz, f2 = 1990 MHz, Tone Spacing = 100 kHz) -- 35 -- % Third Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 125 W PEP, IDQ = 1300 mA, f1 = 1930 MHz, f2 = 1990 MHz, Tone Spacing = 100 kHz) IMD -- -30 -- dBc Input Return Loss (VDD = 26 Vdc, Pout = 125 W PEP, IDQ = 1300 mA, f1 = 1930 MHz, f2 = 1990 MHz, Tone Spacing = 100 kHz) IRL -- -13 -- dB P1dB -- 130 -- W FUNCTIONAL TESTS (In Motorola Test Fixture) Pout, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 1300 mA, f = 1990 MHz) MRF19125 MRF19125S 5.2-518 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA VGG R3 B1 R1 + R2 C5 C4 C3 C7 C2 Z4 RF INPUT Z1 Z2 C1 Z1, Z7 Z2 Z3 Z4 Z5 Z6 Z8 + + C8 C9 L1 C10 C11 + + + C12 C13 C14 VDD Z8 Z3 Z5 Z6 RF OUTPUT C6 DUT 0.500 x 0.084 Transmission Line 1.105 x 0.084 Transmission Line 0.360 x 0.895 Transmission Line 0.920 x 0.048 Transmission Line 0.605 x 1.195 Transmission Line 0.800 x 0.084 Transmission Line 0.660 x 0.095 Transmission Line Z7 Board PCB 0.030 Glass Teflon, Keene GX-0300-55-22, r = 2.55 Etched Circuit Boards MRF19125 Rev. 5, CMR Figure 1. MRF19125 Test Circuit Schematic Table 1. MRF19125 Component Designations and Values Designators Description B1 Short Ferrite Bead, Fair Rite, #2743019447 C1 51 pF Chip Capacitor, ATC #100B510JCA500X C2, C7 5.1 pF Chip Capacitors, ATC #100B5R1JCA500X C3, C10 1000 pF Chip Capacitors, ATC #100B102JCA500X C4, C11 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS C5 0.1 mF Tantalum Chip Capacitor, Kemet #T491C105M050 C6 10 pF Chip Capacitor, ATC #100B100JCA500X C8 10 mF Tantalum Chip Capacitor, Kemet #T491X106K035AS4394 C9, C12, C13, C14 22 mF Tantalum Chip Capacitors, Kemet #T491X226K035AS4394 L1 1 Turn, #20 AWG, 0.100 ID, Motorola N1, N2 Type N Flange Mounts, Omni Spectra #3052-1648-10 R1 1.0 k, 1/8 W Chip Resistor R2 220 k, 1/8 W Chip Resistor R3 10 , 1/8 W Chip Resistor MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF19125 MRF19125S 5.2-519 C7 C2 C9 C8 R3 R1 L1 B1 C11 C10 C1 C3 C12 C13 C14 CUT OUT R2 C5 C4 C6 MRF19125 Rev 5 Figure 2. MRF19125 Test Circuit Component Layout MRF19125 MRF19125S 5.2-520 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA -42 G ps 15 -49 IM3 10 -56 5 -63 ACPR -70 0 1 -40 35 29 3rd Order -50 23 5th Order -60 17 7th Order -70 11 -80 40 10 5 4 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 3. 2-Carrier CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power Figure 4. Intermodulation Distortion Products versus Output Power IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) Pout, OUTPUT POWER (WATTS Avg.) N-CDMA -20 24 VDD = 26 Vdc f = 1960 MHz 100 kHz Tone Spacing -25 -30 0 -10 IRL 20 -35 IDQ = 900 mA -40 -20 2-Carrier N-CDMA, 2.5 MHz Carrier Spacing 1.2288 MHz Channel Bandwidth Peak/Avg. = 9.8 @ 0.01% Probability (CCDF) 18 1100 mA IM3 16 -45 1700 mA 1300 mA G ps 12 4 10 100 150 1920 1930 1940 1950 1960 1970 1980 f, FREQUENCY (MHz) Figure 5. Third Order Intermodulation Distortion versus Output Power Figure 6. 2-Carrier N-CDMA Broadband Performance 48 -27 IDQ = 1300 mA f = 1960 MHz 100 kHz Tone Spacing 40 8 32 6 24 4 P in 0 10 100 200 -28 36 -29 IMD 35 -30 34 -31 8 33 -32 0 32 16 2 37 , DRAIN EFFICIENCY (%) VDD = 26 Vdc IDQ = 1300 mA f = 1960 MHz -50 38 56 G ps 12 -40 -60 1990 2000 Pout, OUTPUT POWER (WATTS) PEP 14 2 -30 VDD = 26 Vdc Pout = 24 Watts (Avg.) IDQ = 1300 mA ACPR 14 -50 1500 mA 10 150 22 -55 P in , INPUT POWER (WATTS), G ps , POWER GAIN (dB) -30 , DRAIN EFFICIENCY (%) 20 41 VDD = 26 Vdc IDQ = 1300 mA f = 1960 MHz 100 kHz Tone Spacing IM3 (dBc), ACPR (dBc), IRL, INPUT RETURN LOSS (dB) -35 IM3 (dBc), ACPR (dBc) 25 -20 IMD, INTERMODULATION DISTORTION (dBc) -28 VDD = 26 Vdc, IDQ = 1300 mA f1 = 1958.75 MHz, f2 = 1961.25 MHz 1.2288 MHz Channel Bandwidth Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF) IMD, INTERMODULATION DISTORTION (dBc) 30 , DRAIN EFFICIENCY (%) , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) TYPICAL CHARACTERISTICS -33 24 24.5 25 25.5 26 26.5 27 27.5 28 Pout, OUTPUT POWER (WATTS) VDD, DRAIN SUPPLY (V) Figure 7. CW Performance Figure 8. Two-Tone Intermodulation Distortion and Drain Efficiency versus Drain Supply MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF19125 MRF19125S 5.2-521 IDQ = 1700 mA G ps , POWER GAIN (dB) 1500 mA 13.5 1300 mA 1100 mA 13 900 mA 12.5 VDD = 26 Vdc f = 1960 MHz 100 kHz Tone Spacing 12 4 100 10 -5 40 35 -15 30 IRL -20 25 VDD = 26 Vdc Pout = 125 Watts (PEP) IDQ = 1300 mA 100 kHz Tone Spacing 20 1940 1960 1970 1980 -35 1990 2000 Figure 10. Two-Tone Broadband Performance 0 3rd Order f1 1.2288 MHz BW -10 VDD = 26 Vdc IDQ = 1300 mA f = 1960 MHz -20 (dB) IMD, INTERMODULATION DISTORTION (dBc) 1950 f, FREQUENCY (MHz) -25 -40 -30 Gps Pout, OUTPUT POWER (WATTS) PEP -35 IMD 10 Figure 9. Two-Tone Power Gain versus Output Power -30 -25 15 1920 1930 150 -10 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) G ps , POWER GAIN (dB),, DRAIN EFFICIENCY (%) 14 5th Order -30 f2 1.2288 MHz BW -ACPR @ 30 kHz BW +ACPR @ 30 kHz BW -40 -45 -50 -50 -60 7th Order -55 -70 100 1000 5000 Df, TONE SPACING (kHz) -5.00 -3.75 -2.50 +IM3 @ 1.2288 MHz BW -1.25 0.00 1.25 2.50 3.75 5.00 f, FREQUENCY (MHz) Figure 11. Intermodulation Distortion Products versus Two-Tone Tone Spacing MRF19125 MRF19125S 5.2-522 -IM3 @ 1.2288 MHz BW Figure 12. 2-Carrier N-CDMA Spectrum MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA f = 1930 MHz Zin f = 1990 MHz VDD = 26 V, IDQ = 1300 mA, Pout = 24 W (Avg.) f MHz f = 1930 MHz ZOL* Zo = 10 f = 1990 MHz Zin ZOL* 1930 1.43 + j5.01 0.75 + j0.93 1960 1.51 + j4.88 0.71 + j0.89 1990 1.56 + j4.93 0.68 + j1.02 Zin = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Note: Input Matching Network Output Matching Network Device Under Test Z in ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Z * OL Figure 13. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF19125 MRF19125S 5.2-523 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common-emitter class AB amplifier applications. Suitable for frequency modulated, amplitude modulated and multi-carrier base station RF power amplifiers. 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR * Specified 26 Volts, 2.0 GHz, Class AB, Two-Tones Characteristics Output Power -- 30 Watts (PEP) Power Gain -- 9.8 dB Efficiency -- 34% Intermodulation Distortion -- -28 dBc * Typical 26 Volts, 1.88 GHz, Class AB, CW Characteristics Output Power -- 30 Watts Power Gain -- 11 dB Efficiency -- 40% Intermodulation Distortion -- -30 dBc CASE 395C-01, STYLE 1 * Excellent Thermal Stability * Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 30 Watts (PEP) Output Power * Characterized with Series Equivalent Large-Signal Impedance Parameters * S-Parameter Characterization at High Bias Levels * Designed for FM, TDMA, CDMA, and Multi-Carrier Applications Note: Not suitable for class A operation. MAXIMUM RATINGS Rating Symbol Value Unit VCEO 25 Vdc Collector-Emitter Voltage VCES 60 Vdc Collector-Base Voltage VCBO 60 Vdc Collector-Emitter Voltage (RBE = 100 ) VCER 30 Vdc Collector-Emitter Voltage Emitter-Base Voltage VEB -3 Vdc Collector Current - Continuous IC 4 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 125 0.71 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Symbol Max Unit RJC 1.4 C/W Operating Junction Temperature THERMAL CHARACTERISTICS Rating Thermal Resistance, Junction to Case (1) (1) Thermal resistance is determined under specified RF operating condition. ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 25 mAdc, IB = 0) V(BR)CEO 25 28 -- Vdc Collector-Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0) V(BR)CES 60 70 -- Vdc Collector-Base Breakdown Voltage (IC = 25 mAdc, IE = 0) V(BR)CBO 60 70 -- Vdc OFF CHARACTERISTICS REV 1 MRF20030R 5.2-524 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit V(BR)EBO 3 3.8 -- Vdc ICES -- -- 10 mAdc hFE 20 40 80 -- Cob -- 28 -- pF Gpe 9.8 11 -- dB Collector Efficiency (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 120 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) 34 38 -- % Intermodulation Distortion (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 120 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IMD -- - 30 - 28 dBc Input Return Loss (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IRL 10 17 -- dB Characteristic OFF CHARACTERISTICS Emitter-Base Breakdown Voltage (IB = 5 mAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc, VBE = 0) ON CHARACTERISTICS DC Current Gain (VCE = 5 Vdc, ICE = 1 Adc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 26 Vdc, IE = 0, f = 1.0 MHz) (1) FUNCTIONAL TESTS (In Motorola Test Fixture) Common-Emitter Amplifier Power Gain (VCC = 26 Vdc, Pout = 30 Watts, ICQ = 120 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Load Mismatch (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 120 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz, Load VSWR = 3:1, All Phase Angles at Frequency of Test) No Degradation in Output Power Common-Emitter Amplifier Power Gain (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) Gpe -- 11 -- dB Collector Efficiency (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) -- 34 -- % Intermodulation Distortion (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) IMD -- - 32 -- dBc Input Return Loss (VCC = 26 Vdc, Pout = 30 Watts (PEP), ICQ = 125 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz) IRL -- 14 -- dB Common-Emitter Amplifier Power Gain (VCC = 26 Vdc, Pout = 30 Watts, ICQ = 125 mA, f = 1880 MHz) Gpe -- 10.5 -- dB Collector Efficiency (VCC = 26 Vdc, Pout = 30 Watts , ICQ = 125 mA, f = 1880 MHz) -- 40 -- % Input Return Loss (VCC = 26 Vdc, Pout = 30 Watts , ICQ = 125 mA, f = 1880 MHz) IRL -- 14 -- dB GUARANTEED BUT NOT TESTED (In Motorola Test Fixture) Output Mismatch Stress (VCC = 25 Vdc, Pout = 30 Watts, ICQ = 125 mA, f = 1880 MHz, VSWR = 3:1, All Phase Angles at Frequency of Test) Typically No Degradation in Output Power (1) For Information Only. This Part Is Collector Matched. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF20030R 5.2-525 VBB R1 R2 L4 L1 Q2 B1 D1 VCC B2 C8 C6 + + Q1 C1 R3 C2 R5 R8 C9 C7 R4 C13 C14 R7 R6 L4 L2 Z5 RF INPUT Z1 C3 B1, B2 C1, C13 C2 C3, C5, C12 C4, C11 C6, C8 C7, C9 C10 C14 D1 L1, L4 L2, L3 Z2 Z3 C4 Z6 Z7 Z8 Z4 DUT C5 Ferrite Bead, P/N 5659065/3B, Ferroxcube 0.1 F, Chip Capacitor, Kermet 100 F, 50 V, Electrolytic Capacitor, Mallory 0.6-4 pF, Variable Capacitor, Johanson, Gigatrim 10 pF, B Case Chip Capacitor, ATC 24 pF, B Case Chip Capacitor, ATC 75 pF, B Case Chip Capacitor, ATC 0.4-2.5 pF, Variable Capacitor, Johanson, Gigatrim 470 F, 63 V, Electrolytic Capacitor, Mallory Diode, Motorola (MUR3160T3) 12 Turns, 22 AWG, IDIA. 0.195 0.750 20 AWG N1, N2 R1, R2 R3, R4 R5, R8 R6, R7 Q1 Q2 Board C10 C11 RF OUT C12 Type N Flange Mount RF Connector MA/COM 3052-1648-10 130 , 1/8 W Chip Resistor, Rohm 100 , 1/8 W Chip Resistor, Rohm 10 , 1/2 W Resistor 10 , 1/8 W Chip Resistor, Rohm (10J) Transistor, PNP Motorola (BD136) Transistor, NPN Motorola (MJD47) 30 Mil Glass Teflon, Arlon GX-0300-55-22, r = 2.55 Figure 1. Class AB Test Fixture Electrical Schematic MRF20030R 5.2-526 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 11.5 40 30 11 35 Pin = 3.5 W 30 2.5 W Pout 25 10.5 20 10 9.5 9 10 VCC = 26 Vdc ICQ = 125 mA f = 2000 MHz Single Tone 5 8.5 1 0 3 2 Pin, INPUT POWER (WATTS) 4 20 1.5 W 15 10 VCC = 26 Vdc ICQ = 125 mA 5 0 1800 8 5 0 25 - 20 1950 2000 -5 11.5 11 -10 3rd Order - 30 10.5 - 40 5th Order - 50 7th Order VCC = 26 Vdc ICQ = 125 mA f1 = 2000.0 MHz f2 = 2000.1 MHz - 60 - 70 0 5 10 -20 9.5 -25 9 -30 Pout = 30 W (PEP) ICQ = 125 mA f1 = 2000.0 MHz f2 = 2000.1 MHz 8.5 8 15 25 30 20 Pout, OUTPUT POWER (WATTS) PEP 10 35 40 7.5 - 30 11 G pe , POWER GAIN (dB) 12 - 40 - 45 125 mA - 50 VCC = 26 Vdc f1 = 2000.0 MHz f2 = 2000.1 MHz - 55 400 mA - 60 0.01 0.1 1.0 -40 -45 28 20 ICQ = 400 mA 250 mA 9 125 mA 8 7 VCC = 26 Vdc f1 = 2000.0 MHz f2 = 2000.1 MHz 6 10 -35 24 26 22 VCC, COLLECTOR SUPPLY VOLTAGE (Vdc) 18 10 ICQ = 75 mA 250 mA IMD Figure 5. Power Gain and Intermodulation Distortion versus Supply Voltage - 25 - 35 -15 Gpe Figure 4. Intermodulation Distortion versus Output Power IMD, INTERMODULATION DISTORTION (dBc) 1900 f, FREQUENCY (MHz) Figure 3. Output Power versus Frequency G pe , GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) Figure 2. Output Power & Power Gain versus Input Power 1850 IMD, INTERMODULATION DISTORTION (dBc) Gpe 15 Pout , OUTPUT POWER (WATTS) 35 G pe , GAIN (dB) Pout , OUTPUT POWER (WATTS) TYPICAL CHARACTERISTICS 100 5 0.01 75 mA 0.1 1.0 10 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 6. Intermodulation Distortion versus Output Power Figure 7. Power Gain versus Output Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF20030R 5.2-527 Gpe G pe , GAIN (dB) 10.5 36 10 34 9.5 32 VSWR 9 1800 1850 1900 f, FREQUENCY (MHz) 1950 28 2000 COLLECTOR EFFICIENCY (%) 38 Pout = 30 W (PEP) VCC = 26 Vdc ICQ = 125 mA INPUT VSWR 11 1.7:1 1.1:1 Figure 8. Performance in Broadband Circuit MTBF FACTOR (HOURS x AMPS 2 ) 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04 1.E+03 1.E+02 0 50 100 150 200 TJ, JUNCTION TEMPERATURE (C) 250 This above graph displays calculated MTBF in hours x ampere2 emitter current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTBF factor by IC2 for MTBF in a particular application. Figure 9. MTBF Factor versus Junction Temperature MRF20030R 5.2-528 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA + j1 + j0.5 + j2 f = 1.8 GHz 1.85 GHz Zin + j0.2 + j5 1.9 GHz 1.95 GHz 2 GHz f = 1.8 GHz ZOL* 1.95 GHz 1.9 GHz 0.2 0.0 + j3 Zo = 10 + j10 1.85 GHz 0.5 1 2 3 5 - j10 - j5 - j0.2 - j3 - j2 - j0.5 - j1 VCC = 26 V, ICQ = 125 mA, Pout = 30 W (PEP) f MHz Zin(1) ZOL* 1800 4.5 + j7.0 4.7 + j2.4 1850 4.5 + j6.0 4.4 + j1.6 1900 4.5 + j4.6 3.4 + j1.2 1950 3.7 + j2.4 3.3 + j1.6 2000 3.5 + j1.5 3.5 + j2.0 Zin(1)= Conjugate of fixture base impedance. ZOL* = Conjugate of the optimum load impedance at given output power, voltage, bias current and frequency. Figure 10. Series Equivalent Input and Output Impedence MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF20030R 5.2-529 Table 1. Common Emitter S-Parameters at VCE = 24 Vdc, IC = 1.8 Adc f GHz S11 |S11| f S21 |S21| f S12 |S12| f S22 |S22| f 1.5 .964 158 .65 74 .046 60 .859 161 1.55 .960 156 .74 68 .047 56 .841 161 1.6 .952 155 .87 60 .049 53 .815 160 1.65 .933 153 1.05 50 .048 46 .787 161 1.7 .892 149 1.32 35 .047 40 .744 163 1.75 .804 149 1.64 13 .040 29 .719 168 1.8 .727 157 1.78 -18 .026 21 .778 175 1.85 .787 163 1.50 -50 .015 54 .883 174 1.9 .873 163 1.14 -73 .020 81 .937 171 1.95 .921 160 .84 -89 .026 88 .949 168 2 .941 157 .62 -102 .031 93 .950 165 2.05 .943 155 .48 -109 .036 93 .946 164 2.1 .940 153 .38 -118 .040 92 .942 163 2.15 .928 151 .30 -127 .042 97 .939 162 2.2 .917 150 .24 -133 .049 99 .935 161 2.25 .907 150 .20 -140 .056 101 .933 160 2.3 .888 148 .17 -150 .066 100 .926 159 2.35 .861 148 .14 -159 .077 98 .916 157 2.4 .853 149 .11 -167 .087 92 .909 157 2.45 .860 146 .10 -176 .095 89 .900 155 2.5 .880 146 .10 156 .119 84 .880 155 MRF20030R 5.2-530 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Power Bipolar Transistors MRF20060R MRF20060RS The MRF20060R and MRF20060RS are designed for class AB broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of these devices make them ideal for large-signal, common emitter class AB amplifier applications. These devices are suitable for frequency modulated, amplitude modulated and multi-carrier base station RF power amplifiers. 60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR * Guaranteed Two-tone Performance at 2000 MHz, 26 Volts Output Power -- 60 Watts (PEP) Power Gain -- 9 dB Efficiency -- 33% Intermodulation Distortion -- -30 dBc * Characterized with Series Equivalent Large-Signal Impedance Parameters * S-Parameter Characterization at High Bias Levels * Excellent Thermal Stability * Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 60 Watts (PEP) Output Power * Designed for FM, TDMA, CDMA and Multi-Carrier Applications CASE 451-06, STYLE 1 (MRF20060R) * Test Fixtures Available at: http://mot-sps.com/rf/designtds/ Note: Not suitable for class A operation. CASE 451A-03, STYLE 1 (MRF20060RS) MAXIMUM RATINGS Rating Symbol Value Unit VCEO 25 Vdc Collector-Emitter Voltage VCES 60 Vdc Collector-Base Voltage VCBO 60 Vdc Collector-Emitter Voltage (RBE = 100 Ohm) VCER 30 Vdc Collector-Emitter Voltage (IB = 0 mA) Base-Emitter Voltage VEB -3 Vdc Collector Current - Continuous IC 8 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 250 1.43 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Symbol Max Unit RJC 0.7 C/W Operating Junction Temperature THERMAL CHARACTERISTICS Rating Thermal Resistance, Junction to Case REV 3 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF20060R MRF20060RS 5.2-531 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) V(BR)CEO 25 28 -- Vdc Collector-Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) V(BR)CES 60 69 -- Vdc Collector-Base Breakdown Voltage (IC = 50 mAdc, IE = 0) V(BR)CBO 60 69 -- Vdc Reverse Base-Emitter Breakdown Voltage (IB = 10 mAdc, IC = 0) V(BR)EBO 3 3.5 -- Vdc ICES -- -- 10 mAdc hFE 20 40 80 -- Cob -- 55 -- pF Common-Emitter Amplifier Power Gain (VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) Gpe 9 9.8 -- dB Collector Efficiency (VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) 33 35 -- % Intermodulation Distortion (VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IMD -- - 32 - 30 dB Input Return Loss (VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz) IRL 12 19 -- dB Characteristic OFF CHARACTERISTICS Zero Base Voltage Collector Leakage Current (VCE = 30 Vdc, VBE = 0) ON CHARACTERISTICS DC Current Gain (VCE = 5 Vdc, IC = 1 Adc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 26 Vdc, IE = 0, f = 1.0 MHz) (1) FUNCTIONAL TESTS (In Motorola Test Fixture) Output Mismatch Stress (VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA, f1 = 2000.0 MHz, f2 = 2000.1 MHz, VSWR = 3:1, All Phase Angles at Frequency of Test) No Degradation in Output Power (1) For Information Only. This Part Is Collector Matched. MRF20060R MRF20060RS 5.2-532 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA VBB R1 L5 Q2 L1 D1 B1 L3 C7 C9 + Q1 C12 C6 C3 C1 C8 R2 + R4 C10 VCC C14 C15 R3 L4 L2 Z6 RF INPUT Z1 Z3 Z4 Z7 Z9 C4 Z10 Z5 C11 C2 B1 C1 C2, C4, C13 C3, C14 C5 C6, C12 C7, C9 C8, C10 C11 C15 Z2 C5 DUT Ferrite Bead, P/N 5659065/3B, Ferroxcube 100 F, 50 V, Electrolytic Capacitor, Mallory 0.6-4.0 pF, Variable Capacitor, Gigatrim, Johanson 0.1 F, Chip Capacitor, Kemit 15 pF, B Case Chip Capacitor, ATC 1000 pF, B Case Chip Capacitor, ATC 91 pF, B Case Chip Capacitor, ATC 24 pF, B Case Chip Capacitor, ATC 13 pF, B Case Chip Capacitor, ATC 470 F, 50 V, Electrolytic Capacitor, Mallory D1 L1, L5 L2, L4 L3 R1 R2 R3, R4 Q1 Q2 Board RF OUTPUT C13 Diode, Motorola (MURS160T3) 12 Turns, 22 AWG, 0.140 Choke .5 inch of 20 AWG 12.5 nH Inductor 2 x 130 , 1/8 W Chip Resistor, Rohm 2 x 100 , 1/8 W Chip Resistor, Rohm 10 , 1/2 W, Resistor Transistor, PNP Motorola (BD136) Transistor, NPN Motorola (MJD47) Glass Teflon, Arlon GX-0300-55-22, r Figure 1. 1.93 - 2 GHz Test Fixture Electrical Schematic MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF20060R MRF20060RS 5.2-533 70 11.5 70 60 11 60 Pout 10 Gpe 9.5 30 9 20 VCC = 26 Vdc ICQ = 200 mA f = 2000 MHz Single Tone 10 8.5 2 0 6 4 Pin, INPUT POWER (WATTS) 8 40 3W 30 20 1850 1900 f, FREQUENCY (MHz) 1950 2000 Figure 3. Output Power versus Frequency - 20 -10 10.5 3rd Order -15 10 - 30 Gpe 5th Order 9.5 -20 9 -25 G pe , GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) VCC = 26 Vdc ICQ = 200 mA 0 1800 Figure 2. Output Power & Power Gain versus Input Power - 40 7th Order - 50 8.5 VCC = 26 Vdc ICQ = 200 mA f1 = 2000.0 MHz f2 = 2000.1 MHz - 60 - 70 0 10 -30 Pout = 60 W (PEP) ICQ = 200 mA f1 = 2000.0 MHz f2 = 2000.1 MHz 8 30 50 60 40 Pout, OUTPUT POWER (WATTS) PEP 20 70 80 7.5 18 Figure 4. Intermodulation Distortion versus Output Power IMD -35 20 22 24 26 VCC, COLLECTOR SUPPLY VOLTAGE (Vdc) -40 28 Figure 5. Power Gain and Intermodulation Distortion versus Supply Voltage 11 - 20 ICQ = 600 mA ICQ = 100 mA - 25 10 G pe , POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) 5W 50 10 8 10 0 Pin = 7 W IMD, INTERMODULATION DISTORTION (dBc) 40 G pe , GAIN (dB) 10.5 50 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) TYPICAL CHARACTERISTICS - 30 200 mA - 35 - 40 VCC = 26 Vdc f1 = 2000.0 MHz f2 = 2000.1 MHz 400 mA - 45 600 mA - 50 0.1 1.0 10 400 mA 9 8 7 100 6 0.1 200 mA VCC = 26 Vdc f1 = 2000.0 MHz f2 = 2000.1 MHz 100 mA 1.0 10 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 6. Intermodulation Distortion versus Output Power Figure 7. Power Gain versus Output Power MRF20060R MRF20060RS 5.2-534 100 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Gpe G pe , GAIN (dB) 9.5 36 9 34 8.5 32 VSWR 8 1900 1920 1940 1960 f, FREQUENCY MHz) 1980 28 2000 COLLECTOR EFFICIENCY (%) 38 Pout = 60 W (PEP) VCC = 26 Vdc ICQ = 200 mA 1.3:1 INPUT VSWR 10 1.2:1 1.1:1 Figure 8. Performance in Broadband Circuit MTBF FACTOR (HOURS x AMPS 2 ) 1.E+11 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 0 50 100 150 200 TJ, JUNCTION TEMPERATURE (C) 250 This above graph displays calculated MTBF in hours x ampere2 emitter curent. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTBF factor by IC2 for MTBF in a particular application. Figure 9. MTBF Factor versus Junction Temperature MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF20060R MRF20060RS 5.2-535 + j1 + j0.5 + j2 f = 1.8 GHz Zin 1.85 GHz f = 1.8 GHz + j0.2 ZOL* 1.85 GHz + j3 1.9 GHz 1.95 GHz 2 GHz 2 GHz + j5 1.95 GHz 1.9 GHz + j10 Zo = 10 0.2 0.0 0.5 1 2 3 5 - j10 - j5 - j0.2 - j3 - j2 - j0.5 - j1 VCC = 26 V, ICQ = 200 mA, Pout = 60 W (PEP) f MHz Zin(1) ZOL* 1800 1.0 + j4.8 1.7 + j3.3 1850 1.5 + j4.8 2.2 + j2.7 1900 2.0 + j4.7 2.4 + j3.0 1950 2.5 + j4.7 2.3 + j3.2 2000 3.5 + j4.7 2.0 + j3.4 Zin(1)= Conjugate of fixture base terminal impedance. ZOL* = Conjugate of the optimum load impedance at given output power, voltage, bias current and frequency. Figure 10. Series Equivalent Input and Output Impedence MRF20060R MRF20060RS 5.2-536 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Table 1. Common Emitter S-Parameters at VCE = 24 Vdc, IC = 3.5 Adc f GHz S11 S21 f 1.5 0.986 168 0.32 81 0.031 1.55 0.985 167 0.35 76 1.6 0.981 167 0.40 70 1.65 0.973 166 0.45 |S21| f S12 |S11| f S22 |S22| f 60 0.923 169 0.031 63 0.918 169 0.032 61 0.908 169 63 0.030 53 0.897 169 |S12| 1.7 0.968 165 0.52 56 0.033 50 0.889 168 1.75 0.951 163 0.62 46 0.028 47 0.880 169 1.8 0.914 161 0.76 32 0.027 39 0.871 170 1.85 0.851 161 0.91 12 0.024 26 0.863 171 1.9 0.789 164 1.02 -15 0.015 5 0.888 174 1.95 0.810 170 0.94 -44 0.005 -7 0.931 174 2 0.880 172 0.75 -68 0.006 -151 0.953 172 2.05 0.934 170 0.57 -85 0.010 152 0.967 170 2.1 0.964 168 0.45 -98 0.015 158 0.965 169 2.15 0.977 165 0.36 -109 0.022 164 0.955 168 2.2 0.975 163 0.30 -118 0.033 165 0.950 167 2.25 0.961 161 0.25 -128 0.049 160 0.947 167 2.3 0.942 160 0.22 -139 0.066 149 0.938 166 2.35 0.919 157 0.19 -149 0.077 142 0.931 165 2.4 0.860 156 0.17 -163 0.100 137 0.922 165 2.45 0.821 159 0.15 177 0.128 122 0.914 165 2.5 0.781 161 0.14 157.0 0.156 108 0.907 165 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF20060R MRF20060RS 5.2-537 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF21010 N-Channel Enhancement-Mode Lateral MOSFET 2170 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Designed for W-CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN-PCS/cellular radio and WLL applications. * Typical W-CDMA Performance: -45 dBc ACPR, 2140 MHz, 28 Volts, 5 MHz Offset/4.096 MHz BW, 15 DTCH Output Power -- 2.1 Watts Power Gain -- 13.5 dB Efficiency -- 21% * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Ease of Design for Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR @ 28 Vdc, 2170 MHz, 10 Watts CW Output Power CASE 360B-03, STYLE 1 * Excellent Thermal Stability MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS +15, - 0.5 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 43.75 0.25 W W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Operating Junction Temperature ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Typical) Machine Model M1 (Typical) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 5.5 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. MRF21010 5.2-538 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) IDSS -- -- 10 Adc Gate-Source Leakage Current (VGS = 5 V, VDS = 0) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 V, ID = 50 A) VGS(th) 2.5 3 4 Vdc Gate Quiescent Voltage (VDS = 28 V, ID = 100 mA) VGS(Q) 2.5 4 4.5 Vdc Drain-Source On-Voltage (VGS = 10 V, ID = 0.5 A) VDS(on) -- 0.4 0.5 Vdc Forward Transconductance (VDS = 10 V, ID = 1 A) gfs -- 0.95 -- S Crss -- 1 -- pF Two-Tone Common Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA, f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz) Gps 12 13.5 -- dB Two-Tone Drain Efficiency (VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA, f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz) 31 35 -- % Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA, f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz) IMD -- - 35 -30 dBc Input Return Loss (VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA, f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz) IRL -- -12 -10 dB P1dB -- 11 -- W Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 10 W CW, IDQ = 100 mA, f = 2170 MHz) Gps -- 12 -- dB Drain Efficiency (VDD = 28 Vdc, Pout = 10 W CW, IDQ = 100 mA, f = 2170 MHz) -- 42 -- % Output Mismatch Stress (VDD = 28 Vdc, Pout = 10 W CW, IDQ = 100 mA, f = 2170 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 V, ID =10 A) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) Output Power, 1 dB Compression Point, CW (VDD = 28 Vdc, IDQ = 100 mA, f = 2170 MHz) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA No Degradation In Output Power Before and After Test MRF21010 5.2-539 VGG R1 C1 C4 C5 T1 R2 R3 R4 C6 T2 C2 P1 R6 L5 R5 C3 C7 C7 Ground V DD C8 L1 L2 L4 L3 C9 MRF21010 C-XM-99-001-01 Figure 1. MRF21010 Demonstration Board Component Layout Table 1. MRF21010 Demonstration Board Component Designations and Values Designators Description C1 1 mF, Chip Capacitor, 0805, AVX #08053G105ZATEA C2, C6 10 mF, 35 V, Tantalum Capacitors, Vishay-Sprague #293D106X9035D C3, C4 6.8 pF, ACCU-P Chip Capacitors, 0805, AVX #08051J6R8CBT C5 10 nF, Chip Capacitor, 0805, AVX #08055C103KATDA C7 2.2 pF, ACCU-P Chip Capacitor, 0805, AVX #08051J2R2BBT C8, C10 0.5 pF, ACCU-P Chip Capacitors, 0805, AVX #08051J0R5BBT C9 10 pF, ACCU-P Chip Capacitor, 0805, AVX #08055J100GBT L1 19 mm x 1.07 mm L2 7.7 mm x 13.8 mm L3 9.3 mm x 22 mm L4 17.7 mm x 3.5 mm L5 22 mm x 1.07 mm R1, R6 10 R2, R3 1 k , 1/8 W Chip Resistors, 0805 P1 W, 1/8 W Chip Resistors, 0805 W 2.2 kW, 1/8 W Chip Resistor, 0805 0 W, 1/8 W Chip Resistor, 0805 5 kW, Potentiometer CMS Cermet Multi-Turn, Bourns #3224W T1 Voltage Regulator Micro8, Motorola #LP2951 T2 Bipolar NPN Transistor SOT23, Motorola #BC847 R4 R5 RF Connectors Type SMA, Johnson #142-0701-631 Substrate: Rogers RO4350, Thickness 0.5 mm, r = 3.53 MRF21010 5.2-540 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA -5 -10 30 IRL 25 -15 VDD = 28 V, IDQ = 100 mA, Pout = 10 Watts (PEP) Two Tone Measurement, 100 kHz Tone Spacing 20 -20 15 -25 10 5 Gps -30 IMD3 -35 0 2000 2080 2110 2140 2170 f, FREQUENCY (MHz) 2200 -40 2280 VDD = 28 V, IDQ = 130 mA, f = 2140 MHz Channel Spacing 5 MHz, BW 4.096 MHz 25 (15 Channels) 20 10 -35 -40 80 mA 100 mA -45 150 mA -50 130 mA -55 -60 0.1 1 10 100 -40 -50 ACPR 5 0.5 1.5 2.5 2 3 Pout, OUTPUT POWER (WATTS Avg.) W-CDMA 1 -20 VDD = 28 V, IDQ = 100 mA, f = 2140 MHz Two Tone Measurement, 100 kHz Tone Spacing -25 3rd Order -30 -35 -40 5th Order -45 -50 -55 7th Order -60 -65 -70 0.1 1 10 Pout, OUTPUT POWER (WATTS) PEP Figure 4. Intermodulation Distortion versus Output Power Figure 5. Intermodulation Distortion Products versus Output Power 14.5 15 -30 VDD = 28 V, f = 2140 MHz Two Tone Measurement, 100 kHz Tone Spacing f = 2140 MHz, IDQ = 100 mA, Pout = 10 Watts (PEP) Two Tone Measurement, 100 kHz Tone Spacing G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) 14.0 150 mA 130 mA 100 mA 13.0 80 mA 12.5 12.0 0.1 100 Pout, OUTPUT POWER (WATTS) PEP 13.5 -60 3.5 Figure 3. W-CDMA ACPR, Power Gain and Drain Efficiency versus Output Power IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) -30 VDD = 28 V, f = 2140 MHz Two Tone Measurement, 100 kHz Tone Spacing -30 Gps 15 Figure 2. Class AB Broadband Circuit Performance -25 -20 -32 -34 14 Gps -36 -38 13 IMD3 -40 1 10 100 12 22 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Power Gain versus Output Power ACPR, ADJACENT CHANNEL POWER RATIO (dB) 35 -10 30 26 28 30 VDD, DRAIN VOLTAGE (VOLTS) -42 32 Figure 7. Intermodulation and Gain versus Supply Voltage MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF21010 5.2-541 IMD, INTERMODULATION DISTORTION (dBc) 0 , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 40 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) TYPICAL CHARACTERISTICS f = 1990 MHz Zin f = 2230 MHz Zo = 10 f = 2230 MHz ZOL* f = 1990 MHz VDD = 28 V, IDQ = 100 mA, Pout = P1dB (CW) f MHz ZOL* Zin 1990 2.89 + j7.37 3.00 + j0.73 2110 3.46 + j8.57 3.29 + j1.88 2230 3.64 + j9.40 3.18 + j1.50 Zin = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Note: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Input Matching Network Output Matching Network Device Under Test Z in Z * OL Figure 8. Series Equivalent Input and Output Impedance MRF21010 5.2-542 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21030 MRF21030S RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to 2.0 to 2.2 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN-PCS/cellular radio and WLL applications. * Wideband CDMA Performance: -45 dB ACPR @ 4.096 MHz, 28 Volts Output Power -- 3.5 Watts Power Gain -- 14 dB Efficiency -- 15% * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Ease of Design for Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.11 GHz, 30 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters 2.2 GHz, 30 W, 28 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465E-02, STYLE 1 (MRF21030) CASE 465F-01, STYLE 1 (MRF21030S) MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS +15, -0.5 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 83.3 0.48 Watts W/C Storage Temperature Range Tstg - 65 to +200 C TJ 200 C Operating Junction Temperature ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 2 (Typical) Machine Model M3 (Typical) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 2.1 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 2 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF21030 MRF21030S 5.2-543 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) IDSS -- -- 1 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 Adc) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 250 mA) VGS(Q) 2 3.3 4.5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) -- 0.29 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 1 Adc) gfs -- 2 -- S Input Capacitance (Including Input Matching Capacitor in Package) (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Ciss -- 98.5 -- pF Output Capacitance (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Coss -- 37 -- pF Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Crss -- 1.3 -- pF Two-Tone Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Gps -- 13 -- dB Two-Tone Drain Efficiency (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) -- 33 -- % 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) IMD -- -30 -- dBc Input Return Loss (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) IRL -- -13 -- dB Two-Tone Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Gps 12 13 -- dB Two-Tone Drain Efficiency (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) 31 33 -- % 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) IMD -- -30 -27.5 dBc Input Return Loss (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) IRL -- -13 -9 dB OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 A) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture) Output Mismatch Stress (VDD = 28 Vdc, Pout = 30 W CW, IDQ = 250 mA, f = 2110 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. MRF21030 MRF21030S 5.2-544 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA B1 VGG + C6 B2 + R1 C5 C4 C8 C10 Z1 Z2 Z3 + R2 C11 C12 C13 L2 L1 RF INPUT VDD Z4 Z5 Z6 C2 C3 C1 Z7 Z8 Z9 Z10 RF OUTPUT C9 DUT C7 MRF21030 B1, B2 C1 C2 C3 C4 C5, C12 C6, C13 C7, C8 C9 C10 C11 L1, L2 R1, R2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Board Short Ferrite Beads 1 pF, Chip Capacitor 4.7 pF, Chip Capacitor 0.5 pF, Chip Capacitor 3.9 pF, Chip Capacitor 0.1 F, Chip Capacitors 470 F, 63 V, Electrolytic Chip Capacitors 0.3 pF, Chip Capacitors 3.6 pF, Chip Capacitor 22 F, Tantalum Chip Capacitor 5.1 pF, Chip Capacitor 12.5 nH, Inductors 12 , Chip Resistors, 1206 0.153 x 0.087 Microstrip 0.509 x 0.156 Microstrip 0.572 x 0.087 Microstrip 0.509 x 0.232 Microstrip 0.277 x 0.143 Microstrip 0.200 x 0.305 Microstrip 0.200 x 0.511 Microstrip 0.510 x 0.328 Microstrip 0.608 x 0.081 Microstrip 0.030 Glass Teflon, TLX8-0300 Taconix (r = 2.55) Figure 1. MRF21030 Schematic C13 + V BIAS + C5 C6 R2 B2 R1 B1 C11 Ground WB1 C3 WB2 C8 L1 CUT OUT AREA C1 VSUPPLY C10 C4 C2 C12 L2 C9 C7 MRF 21030 Rev 1 Ground MRF21030 Rev-1 Figure 2. MRF21030 Populated PC Board Layout Diagram MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF21030 MRF21030S 5.2-545 50 -10 IRL 30 -15 -20 VDD = 28 V, IDQ = 250 mA, Pout = 30 Watts (PEP) Two-Tone Measurement, 100 kHz Tone Spacing 20 -25 Gps 10 -30 IMD 0 2080 2100 2120 2140 2160 f, FREQUENCY (MHz) 2180 -35 2200 VDD = 28 V, IDQ = 250 mA, f = 2140 MHz, Channel Spacing (Channel Bandwidth): 4.096 MHz (5 MHz) 25 20 -40 ACPR 15 -50 -60 5 -70 0 -45 -50 -55 1.0 6 -20 VDD = 28 V, f = 2140 MHz Two-Tone Measurement, 100 kHz Tone Spacing IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) -40 2 1 3 4 5 Pout, OUTPUT POWER (WATTS Avg.) CDMA Figure 4. CDMA ACPR, Power Gain and Drain Efficiency versus Output Power -25 -35 Gps 10 Figure 3. Class AB Broadband Circuit Performance -30 -30 200 mA 250 mA 400 mA 300 mA 350 mA 10 Pout, OUTPUT POWER (WATTS) PEP 100 3rd Order VDD = 28 V, IDQ = 250 mA, f = 2140 MHz Two-Tone Measurement, 100 kHz Tone Spacing -30 -40 7th Order -50 5th Order -60 -70 1.0 Figure 5. Intermodulation Distortion versus Output Power 10 Pout, OUTPUT POWER (WATTS) PEP 100 Figure 6. Intermodulation Distortion Products versus Output Power 15 16 -22 14.5 400 mA 15 G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) -24 350 mA 300 mA 14 250 mA 200 mA VDD = 28 V, f = 2140 MHz Two-Tone Measurement, 100 kHz Tone Spacing 13 1.0 10 Pout, OUTPUT POWER (WATTS) PEP Figure 7. Power Gain versus Output Power MRF21030 MRF21030S 5.2-546 100 -26 Gps -28 14 -30 IMD -32 13.5 -34 f = 2140 MHz IDQ = 250 mA, Pout = 30 Watts (PEP) Two-Tone Measurement, 100 kHz Tone Spacing 13 20 22 24 26 28 30 -36 32 -38 34 VDD, DRAIN VOLTAGE (VOLTS) Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA IMD, INTERMODULATION DISTORTION (dBc) 40 -20 30 ADJACENT CHANNEL POWER RATIO (dB) -5 , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 60 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) TYPICAL CHARACTERISTICS Zin Zo = 10 f = 2170 MHz f = 2110 MHz f = 2110 MHz ZOL* f = 2170 MHz VDD = 28 V, IDQ = 250 mA, Pout = 30 Watts (PEP) f MHz ZOL* Zin 2110 15.3 + j9.4 3.7 + j0.78 2140 14.6 + j9.4 3.4 + j0.37 2170 14.3 + j8.8 3.0 - j0.13 Zin = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Note: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Input Matching Network Output Matching Network Device Under Test Z in Z * OL Figure 9. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF21030 MRF21030S 5.2-547 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21045 MRF21045S RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 500 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels measured over 3.84 MHz Bandwidth at f1 -5 MHz and f2 +5 MHz, Distortion Products measured over a 3.84 MHz Bandwidth at f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF. Output Power = 10 Watts Avg. Efficiency = 23.5% Gain = 15 dB IM3 = -37.5 dBc ACPR = -41 dBc * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Ease of Design for Gain and Insertion Phase Flatness * Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 45 Watts CW Output Power * Excellent Thermal Stability 2170 MHz, 45 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 465E-02, STYLE 1 (MRF21045) CASE 465F-02, STYLE 1 (MRF21045S) MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS +15, -0.5 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 98 0.51 Watts W/C Storage Temperature Range Tstg - 65 to +200 C TJ 200 C Operating Junction Temperature ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Typical) Machine Model M2 (Typical) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 1.97 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 0 MRF21045 MRF21045S 5.2-548 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) IDSS -- -- 10 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 Adc) VGS(th) 2 -- 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 500 mAdc) VGS(Q) 3 3.9 5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) -- 0.19 0.21 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 1 Adc) gfs -- 3 -- S Crss -- 1.8 -- pF OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 Adc) ON CHARACTERISTICS (DC) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) 2-carrier W-CDMA. Peak/Avg. ratio = 8.3 dB @ 0.01% Probability on CCDF. Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Gps 13.5 15 -- dB Drain Efficiency (VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) 21 23.5 -- % Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz Bandwidth at f1 -10 MHz and f2 +10 MHz.) IM3 -- -37.5 -35 dBc Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz Bandwidth at f1 -5 MHz and f2 +5 MHz.) ACPR -- -41 -38 dBc Input Return Loss (VDD = 28 Vdc, Pout = 10 W Avg., IDQ = 500 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) IRL -- -12 -9 dB Output Mismatch Stress (VDD = 28 Vdc, Pout = 45 W CW, IDQ = 500 mA, f = 2170 MHz VSWR = 5:1, All Phase Angles at Frequency of Tests) No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF21045 MRF21045S 5.2-549 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Two-Tone Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Gps -- 14.9 -- dB Two-Tone Drain Efficiency (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) -- 36 -- % Intermodulation Distortion (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) IMD -- -30 -- dBc Two-Tone Input Return Loss (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 500 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) IRL -- -12 -- dB P1dB -- 50 -- W FUNCTIONAL TESTS (In Motorola Test Fixture) -- continued Pout, 1 dB Compression Point (VDD = 28 Vdc, IDQ = 500 mA, f = 2170 MHz) MRF21045 MRF21045S 5.2-550 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA VGG R3 R1 R4 B1 + R2 C5 C4 C3 C7 C2 Z1 Z2 Z3 Z4 C1 Z1, Z9 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z10 + C8 C9 C10 VDD C11 Z10 Z5 RF INPUT L1 + Z6 Z7 Z8 RF OUTPUT C6 DUT 0.750 x 0.084 Transmission Line 0.160 x 0.084 Transmission Line 1.195 x 0.176 Transmission Line 0.125 x 0.320 Transmission Line 1.100 x 0.045 Transmission Line 0.442 x 0.650 Transmission Line 0.490 x 0.140 Transmission Line 0.540 x 0.084 Transmission Line 0.825 x 0.055 Transmission Line Z9 0.030 Glass Teflon, Keene GX-0300-55-22, r = 2.55 Etched Circuit Boards MRF21045 Rev. 3, CMR Board PCB Figure 1. MRF21045 Test Circuit Schematic Table 1. MRF21045 Component Designations and Values Designators Description B1 Short Ferrite Bead, Fair Rite, #2743019447 C1, C2, C6 43 pF Chip Capacitors, ATC #100B430JCA500X C7 5.6 pF Chip Capacitor, ATC #100B5R6JCA500X C3, C9 1000 pF Chip Capacitors, ATC #100B102JCA500X C4, C10 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS C5 1.0 mF Tantalum Chip Capacitor, Kemet #T491C105M050 C8 10 mF Tantalum Chip Capacitor, Kemet #T495X106K035AS4394 C11 22 mF Tantalum Chip Capacitor, Kemet #T491X226K035AS4394 L1 1 Turn, #20 AWG, 0.100 ID, Motorola N1, N2 Type N Flange Mounts, Omni Spectra #3052-1648-10 R1 1.0 k, 1/8 W Chip Resistor R2 180 k, 1/8 W Chip Resistor R3, R4 10 , 1/8 W Chip Resistors MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF21045 MRF21045S 5.2-551 C8 C7 R1 B1 R3 C2 L1 C10 R4 C9 R2 C5 C4 C3 C11 C1 C6 WB1 WB2 MRF21045 Figure 2. MRF21045 Test Circuit Component Layout MRF21045 MRF21045S 5.2-552 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Gps 15 -40 10 5 -45 -50 IM3 ACPR 0 -55 1 0.5 10 35 -40 30 3rd Order 5th Order -55 15 -60 VDD = 28 Vdc, IDQ = 500 mA f1 = 2135 MHz, f2 = 2145 MHz 7th Order -65 4 10 5 6 8 10 50 60 30 Figure 3. 2-Carrier W-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power Figure 4. Intermodulation Distortion Products versus Output Power 600 mA 400 mA VDD = 28 Vdc f1 = 2135 MHz f2 = 2145 MHz 500 mA -50 4 6 8 10 50 60 30 28 -10 26 IRL -15 24 -20 22 -25 VDD = 28 Vdc, Pout = 10 Watts (Avg.) IDQ = 500 mA 2-Carrier W-CDMA, 10 MHz Carrier Spacing 3.84 MHz Channel Bandwidth Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF) 20 18 -30 IM3 -35 16 ACPR -40 14 Gps -45 2110 2090 2130 2150 2170 Pout, OUTPUT POWER (WATTS) PEP f, FREQUENCY (MHz) Figure 5. Intermodulation Distortion versus Output Power Figure 6. 2-Carrier W-CDMA Broadband Performance 15.5 14.5 40 14 30 13.5 20 VDD = 28 Vdc IDQ = 500 mA f = 2170 MHz 13 8 10 30 -26 IMD 39 -27 38 -28 37 -29 36 -30 IDQ = 500 mA Pout = 45 Watts (PEP) f1 = 2135 MHz, f2 = 2145 MHz 35 0 6 50 60 -25 40 10 12.5 4 -24 41 , DRAIN EFFICIENCY (%) 50 , DRAIN EFFICIENCY (%) 15 2190 42 60 Gps G ps , POWER GAIN (dB) 20 -50 Pout, OUTPUT POWER (WATTS) PEP 700 mA 2 25 -45 Pout, OUTPUT POWER (WATTS Avg.) W-CDMA IDQ = 300 mA -45 -35 3 -30 -40 40 20 -25 -35 -30 -31 34 -32 24 25 26 27 28 Pout, OUTPUT POWER (WATTS) VDD, DRAIN SUPPLY (V) Figure 7. CW Performance Figure 8. Two-Tone Intermodulation Distortion and Drain Efficiency versus Drain Supply MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA , DRAIN EFFICIENCY (%) -35 45 29 MRF21045 MRF21045S 5.2-553 IM3 (dBc), ACPR (dBc), IRL, INPUT RETURN LOSS (dB) 20 -30 IM3 (dBc), ACPR (dBc) 25 -25 IMD, INTERMODULATION DISTORTION (dBc) -25 VDD = 28 Vdc, IDQ = 500 mA f1 = 2135 MHz, f2 = 2145 MHz 3.84 MHz Channel Bandwidth Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF) IMD, INTERMODULATION DISTORTION (dBc) 30 , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) TYPICAL CHARACTERISTICS IDQ = 700 mA 500 mA -15 30 600 mA -20 VDD = 28 Vdc Pout = 45 Watts (PEP) IDQ = 500 mA f1 = f - 5 MHz, f2 = f + 5 MHz 25 -25 20 400 mA 14.5 VDD = 28 Vdc f1 = 2135 MHz f2 = 2145 MHz 300 mA -30 IMD 15 14 -35 Gps 10 4 6 8 10 50 60 30 2090 2110 2130 2150 -40 2190 2170 Pout, OUTPUT POWER (WATTS) PEP f, FREQUENCY (MHz) Figure 9. Two-Tone Power Gain versus Output Power Figure 10. Two-Tone Broadband Performance 0 -25 -30 -35 -40 3rd Order -10 VDD = 28 Vdc Pout = 45 Watts (PEP) IDQ = 500 mA f1 = 2140 MHz - Df/2, f2 = 2140 MHz + Df/2 -20 -30 (dB) IMD, INTERMODULATION DISTORTION (dBc) IRL 35 15.5 15 -10 5th Order -45 f1 3.84 MHz BW f2 3.84 MHz BW -ACPR @ 3.84 MHz BW +ACPR @ 3.84 MHz BW -IM3 @ 3.84 MHz BW +IM3 @ 3.84 MHz BW -40 -50 7th Order -50 -60 -55 0.1 1 10 Df, TONE SEPARATION (MHz) Figure 11. Intermodulation Distortion Products versus Two-Tone Spacing MRF21045 MRF21045S 5.2-554 30 -70 -20 -15 -10 -5 0 5 10 15 20 f, FREQUENCY (MHz) Figure 12. 2-Carrier W-CDMA Spectrum MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 40 G ps , POWER GAIN (dB),, DRAIN EFFICIENCY (%) G ps , POWER GAIN (dB) 16 f = 2110 MHz ZOL* f = 2170 MHz Zo = 10 Zin f = 2170 MHz f = 2110 MHz VDD = 28 Vdc, IDQ = 500 mA, Pout = 10 W (Avg.) f MHz Zin ZOL* 2110 18.88 + j8.86 3.11 + j4.18 2140 19.83 + j9.93 3.09 + j3.87 2170 19.68 + j10.44 3.12 + j3.72 Zin = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Note: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Input Matching Network Output Matching Network Device Under Test Z in Z * OL Figure 13. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF21045 MRF21045S 5.2-555 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF21060 MRF21060S The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to 2.1 to 2.2 GHz. Suitable for W-CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications. * Typical W-CDMA Performance: 2140 MHz, 28 Volts 5 MHz Offset @ 4.096 MHz BW, 15 DTCH Output Power -- 6.0 Watts Power Gain -- 12.5 dB Drain Efficiency -- 15% * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Ease of Design for Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.11 GHz, 60 Watts (CW) Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters 2170 MHz, 60 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 465-04, STYLE 1 (MRF21060) CASE 465A-04, STYLE 1 (MRF21060S) MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS +15, -0.5 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 180 0.98 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Operating Junction Temperature ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 2 (Typical) Machine Model M3 (Typical) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 1.02 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 2 MRF21060 MRF21060S 5.2-556 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) IDSS -- -- 6 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 Adc) VGS(th) 2 -- 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 500 mAdc) VGS(Q) 2.5 3.9 4.5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) -- 0.27 -- Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs -- 4.7 -- S Crss -- 2.7 -- pF Two-Tone Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz) Gps 11 12.5 -- dB Two-Tone Drain Efficiency (VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz) 31 34 -- % 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz) IMD -- -30 -28 dBc Input Return Loss (VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA, f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz) IRL -- -12 -- dB P1dB -- 60 -- W OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 Adc) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) Pout, 1 dB Compression Point (VDD = 28 Vdc, Pout = 60 W CW, f = 2170 MHz) Output Mismatch Stress (VDD = 28 Vdc, Pout = 60 W CW, IDQ = 500 mA, f = 2110 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF21060 MRF21060S 5.2-557 R4 VGG + B2 R3 R1 VDD + + + R2 C1 C2 C3 C4 C5 T8 T1 T2 T3 T4 T5 T6 C6 C7 C8 T9 T10 RF INPUT B3 T11 T12 T13 T14 T15 RF OUTPUT C11 T7 C12 C9 C10 B2 - B3 C1 C2, C7 C3, C8 C4, C5 C6 C9, C11 C10 C12 R1 R2 R3 R4 T1 T2 DUT Ferrite Bead, Fair Rite #2743019447 10 F, 50 V Electrolytic Chip Capacitor, Panasonic #ECEV1HV100R 1000 pF, Chip Capacitors, ATC #100B102JCA500X 0.10 F, Chip Capacitors, Kemet #CDR33BX104AKWS 4.7 pF, Chip Capacitors, ATC #100B4R7JCA500X 22 F, 35 V Tantalum Surface Mount Chip Capacitor, Sprague 9.1 pF, Chip Capacitors, ATC #100B9R1JCA500X 0.8 pF - 8.0 pF, Variable Capacitor, Johanson Gigatrim 0.4 pF - 4.5 pF, Variable Capacitor, Johanson Gigatrim 1 k, 1/4 W, Fixed Film Chip Resistor, 0.08 x 0.13 560 k, 1/4 W, Fixed Film Chip Resistor, 0.08 x 0.13 10 , 1/4 W, Fixed Film Chip Resistor, 0.08 x 0.13 10 , 1/4 W, Fixed Film Chip Resistor, 0.08 x 0.13 0.743 x 0.080 Microstrip 0.070 x 0.100 Microstrip T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 Board 0.180 x 0.100 Microstrip 0.152 x 0.293 Microstrip 0.216 x 0.100 Microstrip 0.114 x 0.410 Microstrip 0.626 x 0.872 Microstrip 1.050 x 0.050 Microstrip 0.830 x 0.050 Microstrip 0.596 x 1.040 Microstrip 0.186 x 0.315 Microstrip 0.097 x 0.525 Microstrip 0.353 x 0.138 Microstrip 0.112 x 0.080 Microstrip 0.722 x 0.080 Microstrip 0.030 Glass Teflon, Arlon GX-0300-55-22, 2 oz Cu Figure 1. MRF21060 Test Circuit Schematic MRF21060 MRF21060S 5.2-558 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA TO GATE BIAS FEEDTHRU C1 R1 C5 R3 TO DRAIN BIAS FEEDTHRU C6 R4 B2 C2 C3 C4 B3 R2 C7 T8 C8 T9 C11 C9 T1 T3 T4 T5 T6 T7 T10 T11 T12 T15 T13 T2 T14 C12 C10 MRF21060 Figure 2. MRF21060 Populated PC Board Layout Diagram MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF21060 MRF21060S 5.2-559 35 -5 30 -10 IRL 25 15 -20 -25 Gps 10 -30 IMD 5 0 2080 -35 2100 2140 2160 2120 f, FREQUENCY (MHz) 2180 -40 2200 VDD = 28 V IDQ = 700 mA, f = 2140 MHz, Channel Spacing (Channel Bandwidth): 5 MHz @ 4.096 MHz BW 15 DTCH 40 35 -35 -40 25 20 15 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) 900 mA -45 700 mA -50 500 mA -60 -65 0.1 1.0 10 Pout, OUTPUT POWER (WATTS) PEP 100 -55 5 2 6 14 4 8 12 10 Pout, OUTPUT POWER (WATTS (Avg. W-CDMA)) VDD = 28 V IDQ = 700 mA, f = 2140 MHz Two-Tone Measurement, 100 kHz Tone Spacing -30 -40 3rd Order -50 -60 5th Order 7th Order -70 -80 0.1 10 1.0 Pout, OUTPUT POWER (WATTS) PEP 100 -22 14 f = 2140 MHz IDQ = 500 mA, Pout = 60 Watts (PEP) Two-Tone Measurement, 100 kHz Tone Spacing 900 mA 13 13.5 G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) -60 16 Figure 6. Intermodulation Distortion Products versus Output Power 14 700 mA 12 500 mA 10 0.1 -50 Gps 10 Figure 5. Intermodulation Distortion versus Output Power 11 -45 -20 VDD = 28 V f = 2140 MHz Two-Tone Measurement, 100 kHz Tone Spacing -40 -55 ACPR Figure 4. W-CDMA ACPR, Power Gain and Drain Efficiency versus Output Power -25 -35 -30 30 Figure 3. Class AB Broadband Circuit Performance -30 -25 VDD = 28 V f = 2140 MHz Two-Tone Measurement, 100 kHz Tone Spacing 1.0 10 Pout, OUTPUT POWER (WATTS) PEP Figure 7. Power Gain versus Output Power MRF21060 MRF21060S 5.2-560 IMD -24 -26 -28 -30 13 -32 Gps -34 12.5 -36 100 12 22 24 26 28 30 -38 32 VDD, DRAIN VOLTAGE (VOLTS) Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA IMD, INTERMODULATION DISTORTION (dBc) 20 -15 VDD = 28 V IDQ = 500 mA, Pout = 60 Watts (PEP) Two-Tone Measurement, 100 kHz Tone Spacing -20 45 ADJACENT CHANNEL POWER RATIO (dB) 0 , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 40 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) TYPICAL CHARACTERISTICS 2170 MHz Zo = 10 ZOL* 2170 MHz f = 2110 MHz Zin f = 2110 MHz VDD = 28 V, IDQ = 500 mA, Pout = 60 Watts (PEP) f MHz ZOL* Zin 2110 2.40 + j0.55 3.07 + j2.05 2140 2.26 + j0.87 2.89 + j2.38 2170 2.08 + j1.23 2.66 + j2.71 Zin = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Note: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Input Matching Network Output Matching Network Device Under Test Z in Z * OL Figure 9. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF21060 MRF21060S 5.2-561 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21085 MRF21085S RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 1000 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 -5 MHz and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW @ f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF. Output Power = 19 Watts Avg. Power Gain = 13.6 dB Efficiency = 23% IM3 = -37.5 dBc ACPR = -41 dBc * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Ease of Design for Gain and Insertion Phase Flatness * Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 90 Watts CW Output Power * Excellent Thermal Stability 2170 MHz, 90 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 465-04, STYLE 1 (MRF21085) CASE 465A-04, STYLE 1 (MRF21085S) MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS +15, -0.5 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 273 1.56 Watts W/C Storage Temperature Range Tstg - 65 to +200 C TJ 200 C Operating Junction Temperature ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Typical) Machine Model M3 (Typical) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.64 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 0 MRF21085 MRF21085S 5.2-562 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0) IDSS -- -- 10 Adc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0) IGSS -- -- 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 Adc) VGS(th) 2 -- 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1000 mAdc) VGS(Q) 3 3.9 5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) -- 0.18 0.21 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs -- 6 -- S Crss -- 3.6 -- pF OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 Adc) ON CHARACTERISTICS (DC) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1.0 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.3 dB @ 0.01% Probability on CCDF. Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Gps 12 13.6 -- dB Drain Efficiency (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) 20 23 -- % Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW at f1 -10 MHz and f2 +10 MHz referenced to carrier channel power.) IM3 -- -37.5 -35 dBc Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz at f1 -5 MHz and f2 +5 MHz.) ACPR -- -41 -38 dBc Input Return Loss (VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 1000 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) IRL -- -12 -9 dB Output Mismatch Stress (VDD = 28 Vdc, Pout = 90 W CW, IDQ = 1000 mA, f = 2170 MHz VSWR = 5:1, All Phase Angles at Frequency of Tests) No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF21085 MRF21085S 5.2-563 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Two-Tone Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Gps -- 13.6 -- dB Two-Tone Drain Efficiency (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) -- 36 -- % Two-Tone Intermodulation Distortion (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) IMD -- -31 -- dBc Input Return Loss (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 1000 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) IRL -- -12 -- dB P1dB -- 100 -- W FUNCTIONAL TESTS (In Motorola Test Fixture) Pout, 1 dB Compression Point (VDD = 28 Vdc, IDQ = 1000 mA, f = 2170 MHz) MRF21085 MRF21085S 5.2-564 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA VGG R3 R1 R4 B1 + R2 C5 C4 C3 C7 C2 Z4 RF INPUT L1 + Z1 Z2 C1 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 C8 C9 C10 + + C11 C12 VDD Z8 Z3 Z5 Z6 RF OUTPUT C6 DUT 0.750 x 0.084 Transmission Line 1.015 x 0.084 Transmission Line 0.480 x 0.800 Transmission Line 0.750 x 0.050 Transmission Line 0.610 x 0.800 Transmission Line 0.885 x 0.084 Transmission Line 0.720 x 0.084 Transmission Line 0.800 x 0.070 Transmission Line Z7 0.030 Glass Teflon, Keene GX-0300-55-22, r = 2.55 Etched Circuit Boards MRF21085 Rev. 3, CMR Board PCB Figure 1. MRF21085 Test Circuit Schematic Table 1. MRF21085 Component Designations and Values Designators Description B1 Short Ferrite Bead, Fair Rite, #2743019447 C1, C6 43 pF Chip Capacitors, ATC #100B430JCA500X C2 10 pF Chip Capacitor, ATC #100B100JCA500X C7 2.7 pF Chip Capacitor, ATC #100B2R7JCA500X C3, C9 1000 pF Chip Capacitors, ATC #100B102JCA500X C4, C10 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS C5 1.0 mF Tantalum Chip Capacitor, Kemet #T491C105M050 C8 10 mF Tantalum Chip Capacitor, Kemet #T495X106K035AS4394 C11, C12 22 mF Tantalum Chip Capacitors, Kemet #T491X226K035AS4394 L1 1 Turn, #20 AWG, 0.100 ID, Motorola N1, N2 Type N Flange Mounts, Omni Spectra #3052-1648-10 R1 1.0 k, 1/8 W Chip Resistor R2 180 k, 1/8 W Chip Resistor R3, R4 10 , 1/8 W Chip Resistors MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF21085 MRF21085S 5.2-565 C8 C7 C2 R1 B1 R2 C3 L1 R3 WB1 CUT OUT C5 C4 C1 C10 R4 C9 WB2 C11 C12 C6 MRF21085 Rev 3 Figure 2. MRF21085 Test Circuit Component Layout MRF21085 MRF21085S 5.2-566 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA G ps 15 -40 10 -45 ACPR 5 -50 -55 0 1 -30 -35 35 30 -40 -45 25 3rd Order -50 20 5th Order -55 15 -60 10 7th Order 5 100 -65 30 10 40 4 10 Pout, OUTPUT POWER (WATTS) PEP Figure 3. 2-Carrier W-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power Figure 4. Intermodulation Distortion Products versus Output Power IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) Pout, OUTPUT POWER (WATTS Avg.) N-CDMA -25 24 -30 -35 -40 1150 mA -45 IM3 -40 16 850 mA -50 VDD = 28 Vdc 2-Carrier W-CDMA Pout = 19 Watts (Avg.) -20 10 MHz Carrier Spacing IDQ = 1000 mA 3.84 MHz Channel Bandwidth -30 Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF) 18 1300 mA VDD = 28 Vdc f1 = 2135 MHz f2 = 2145 MHz 1000 mA ACPR -50 14 G ps 12 -55 4 -10 IRL 20 IDQ = 700 mA 0 22 10 100 2090 2110 2130 2150 2170 Pout, OUTPUT POWER (WATTS) PEP f, FREQUENCY (MHz) Figure 5. Third Order Intermodulation Distortion versus Output Power Figure 6. 2-Carrier W-CDMA Broadband Performance 14.5 -60 2190 42 60 , DRAIN EFFICIENCY (%) -35 45 VDD = 28 Vdc IDQ = 1000 mA f1 = 2135 MHz f2 = 2145 MHz -24 13.5 40 13 30 12.5 20 VDD = 28 Vdc IDQ = 1000 mA f = 2140 MHz 12 11.5 2 41 50 G ps 10 , DRAIN EFFICIENCY (%) 14 , DRAIN EFFICIENCY (%) G ps , POWER GAIN (dB) IMD 40 -26 39 -27 38 -28 37 -29 35 -31 34 24 25 26 27 28 -32 29 VDD, DRAIN SUPPLY (V) Pout, OUTPUT POWER (WATTS) Figure 7. CW Performance -30 IDQ = 1000 mA f = 2140 MHz 10 MHz Tone Spacing 36 10 0 100 130 -25 Figure 8. Two-Tone Intermodulation Distortion and Drain Efficiency versus Drain Supply MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF21085 MRF21085S 5.2-567 IM3 (dBc), ACPR (dBc), IRL, INPUT RETURN LOSS (dB) 20 -30 IM3 -25 IMD, INTERMODULATION DISTORTION (dBc) 25 -25 VDD = 28 Vdc, IDQ = 1000 mA f1 = 2135 MHz, f2 = 2145 MHz 3.84 MHz Channel Bandwidth Peak/Avg. = 8.3 dB @ 0.01% Probability (CCDF) IM3 (dBc), ACPR (dBc) 30 IMD, INTERMODULATION DISTORTION (dBc) , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) TYPICAL CHARACTERISTICS IDQ = 1300 mA G ps , POWER GAIN (dB) 1150 mA 14 1000 mA 850 mA 13.5 700 mA 13 VDD = 28 Vdc f1 = 2135 MHz f2 = 2145 MHz 12.5 4 10 -10 40 IRL 35 VDD = 28 Vdc Pout = 90 Watts (PEP) IDQ = 1000 mA 10 MHz Tone Spacing 30 25 -25 IMD -30 15 Gps -35 10 2110 2125 Pout, OUTPUT POWER (WATTS) PEP 2140 2155 -40 2185 2170 f, FREQUENCY (MHz) Figure 9. Two-Tone Power Gain versus Output Power Figure 10. Two-Tone Broadband Performance -20 0 -25 VDD = 28 Vdc IDQ = 1000 mA f = 2140 MHz -10 -30 3rd Order -20 -35 (dB) IMD, INTERMODULATION DISTORTION (dBc) -20 20 2095 100 -15 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) G ps , POWER GAIN (dB),, DRAIN EFFICIENCY (%) 14.5 -40 -30 f1 3.84 MHz BW f2 3.84 MHz BW -ACPR @ 3.84 MHz BW +ACPR @ 3.84 MHz BW -IM3 @ 3.84 MHz BW +IM3 @ 3.84 MHz BW -40 5th Order -45 -50 7th Order -50 -60 -55 0.1 -70 1 30 10 Df, TONE SPACING (kHz) -15 -10 -5 0 5 10 15 20 f, FREQUENCY (MHz) Figure 11. Intermodulation Distortion Products versus Two-Tone Spacing MRF21085 MRF21085S 5.2-568 -20 Figure 12. 2-Carrier W-CDMA Spectrum MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA f = 2110 MHz Zin VDD = 28 V, IDQ = 1000 mA, Pout = 19 W (Avg.) f = 2170 MHz f MHz f = 2110 MHz ZOL* f = 2170 MHz Zo = 10 Zin ZOL* 2110 1.10 + j3.71 1.23 + j2.10 2140 1.11 + j3.57 1.26 + j1.92 2170 1.12 + j3.40 1.25 + j1.76 Zin = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Note: Input Matching Network Output Matching Network Device Under Test Z in ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Z * OL Figure 13. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF21085 MRF21085S 5.2-569 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. * Typical W-CDMA Performance for 2140 MHz, 28 Volts 4.096 MHz BW @ 5 MHz offset, 1 PERCH 15 DTCH: Output Power: 11.5 Watts Efficiency: 16% Gain: 12.2 dB ACPR: -45 dBc * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Ease of Design for Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2110 MHz, 90 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters 2170 MHz, 90 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 465B-02, STYLE 1 (MRF21090) CASE 465C-01, STYLE 1 (MRF21090S) MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Rating VDSS 65 Vdc Gate-Source Voltage VGS +15, -0.5 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 270 1.54 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Operating Junction Temperature ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model MRF21090 MRF21090S 2 (Typical) 1 (Typical) Machine Model MRF21090 MRF21090S M3 (Typical) M4 (Typical) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.65 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 3 MRF21090 MRF21090S 5.2-570 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0) IDSS -- -- 10 Adc Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) gfs -- 7.2 -- S Gate Threshold Voltage (VDS = 10 V, ID = 300 A) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 28 V, ID = 750 mA) VGS(Q) 3 3.8 5 Vdc Drain-Source On-Voltage (VGS = 10 V, ID = 1 A) VDS(on) -- 0.1 0.6 Vdc Crss -- 4.2 -- pF Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Gps 10 11.7 -- dB Drain Efficiency (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) 30 33 -- % Intermodulation Distortion (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) IMD -- -30 -27.5 dBc Input Return Loss (VDD = 28 Vdc, Pout = 90 W PEP, IDQ = 750 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) IRL -- -12 -9.0 dB Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 75 W CW, IDQ = 750 mA, f = 2170 MHz) Gps -- 11.7 -- dB Drain Efficiency (VDD = 28 Vdc, Pout = 75 W CW, IDQ = 750 mA, f = 2170 MHz) -- 41 -- % Output Mismatch Stress (VDD = 28 Vdc, Pout = 90 W CW, IDQ = 750 mA, f = 2110 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 100 Adc) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF21090 MRF21090S 5.2-571 R2 V DD B1 R1 VGG + C2 + C1 + C7 T11 C3 + C10 C9 C8 + C11 C13 C4 RF OUTPUT T10 RF INPUT T6 C6 T1 T2 T3 T4 C3, C9 C4, C8 C5, C12 C6 C7 C11 C14 R1 R2 T1 T2 T3 T4 T5 T6 C14 T8 T9 C12 T5 DUT C5 B1 C1, C13 C2, C10 T7 Ferrite Bead, Fair Rite, 2743019447 470 F, 50 V Electrolytic Capacitor 22 F, 35 V Tantalum Surface Mount Chip Capacitor, Kemet 20 nF, RF Chip Capacitor, 100B203MCA500X, ATC 5.1 pF, RF Chip Capacitor, 100B5R1CCA500X, ATC 0.4 - 2.5 pF, Variable Capacitor, Johanson Gigatrim 10 pF, RF Chip Capacitor, 100B100JCA500X, ATC 1 mF, 35 V Tantalum Surface Mount Chip Capacitor, Kemet 1 nF, RF Chip Capacitor, 100B102JCA500X, ATC 8.2 pF, RF Chip Capacitor, 100B8R2CCA500X, ATC 13 , 1/4 W Chip Resistor, RM73B2B130JT, Garret Instrument 12 , 1/4 W Chip Resistor, RM73B2B120JT, Garret Instrument 30.7 x 2.09 mm Microstrip Line 5.99 x 2.09 mm Microstrip Line 7.55 x 9.89 mm Microstrip Line 3.77 x 15.71 mm Microstrip Line 6.89 x 26.17 mm Microstrip Line 14.93 x 32.05 mm Microstrip Line T7 T8 T9 T10 T11 WS1, WS2 10.23 x 2.09 mm Microstrip Line 6.03 x 2.09 mm Microstrip Line 23.98 x 2.09 mm Microstrip Line 29.82 x 1.15 mm Microstrip Line 17.08 x 1.15 mm Microstrip Line Beryllium Copper Wear Blocks 5 mils Thick Brass Banana Jack and Nut Red Banana Jack and Nut Green Banana Jack and Nut Type N Jack Connectors, 3052-1648-10, Omni Specra 4-40 Head Screws 0.125 Long 4-40 Head Screws 0.188 Long 4-40 Head Screws 0.312 Long 4-40 Head Screws 0.438 Long Endplates Brass Endplates for Copper Bedstead Bedstead Copper Bedstead/Heatsink Insert Copper Bedstead Insert Raw PCB 0.030 Glass Teflon, 2 oz Copper Clad 3 x 5 Arion RF Circuit 3 x 5 Copper Clad PCB Teflon, MRF21090, CMR Figure 1. MRF21090 Test Circuit Schematic C7 C8 Gate Bias Feed B1 Drain Bias Feed T11 R2 R1 C9 T10 C3 C4 C1 C2 T1 C U T O U T T2 C6 T3 C5 T4 C11 C10 T7 C13 T8 T9 C14 C12 T5 T6 MRF21090 Figure 2. Component Parts Layout MRF21090 MRF21090S 5.2-572 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA -15 VDD = 28 Vdc IDQ = 750 mA Pout = 90 Watts (PEP) Two-Tone Measurement 100 kHz Tone Spacing 30 20 Gps -20 -25 -30 10 IMD 0 -35 2100 2080 2120 2140 2160 f, FREQUENCY (MHz) 2180 2200 25 ACPR 15 10 5 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) 2000 mA 1500 mA -40 -50 1000 mA -55 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 -70 5.0 0 10 15 20 VDD = 28 Vdc IDQ = 750 mA f = 2140 MHz Two-Tone Measurement 100 kHz Tone Spacing -30 -40 3rd Order 5th Order -50 7th Order -60 -70 -80 1 100 10 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Intermodulation Distortion Products versus Output Power 11.8 15 2000 mA VDD = 28 Vdc f = 2140 MHz Two-Tone Measurement 100 kHz Tone Spacing 1500 mA 13 1000 mA 12 800 mA 11 -22 11.6 G ps, POWER GAIN (dB) 14 G ps, POWER GAIN (dB) -60 -20 Figure 5. Intermodulation Distortion versus Output Power -24 11.4 11.2 Gps f = 2140 MHz IDQ = 750 mA Pout = 90 Watts (PEP) Two-Tone Measurement 100 kHz TS Fixture Tuned for 28 Volts -26 -28 11.0 -30 10.8 -32 500 mA 10 -50 Gps Figure 4. CDMA ACPR, Power Gain and Drain Efficiency versus Output Power 500 mA 800 mA -40 Pout, OUTPUT POWER (WATTS) AVG. -25 -45 -30 20 Figure 3. Class AB Broadband Circuit Performance VDD = 28 Vdc f = 2140 MHz -30 Two-Tone Measurement 100 kHz Tone Spacing -35 VDD = 28 Vdc IDQ = 1000 mA f = 2140 MHz Channel Spacing (Channel Bandwidth): 4.096 MHz (5 MHz) 1 10 Pout, OUTPUT POWER (WATTS) PEP ADJACENT CHANNEL POWER RATIO (dB) 40 -10 -20 30 IMD 100 10.6 IMD, INTERMODULATION DISTORTION (dBc) IRL 50 , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB -5 60 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) TYPICAL PERFORMANCE (IN MOTOROLA TEST FIXTURE) -34 20 Figure 7. Power Gain versus Output Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 22 24 26 28 30 VDS, DRAIN VOLTAGE (VOLTS) 32 34 Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage MRF21090 MRF21090S 5.2-573 Zo = 10 f = 2170 MHz Zin 2110 MHz f = 2110 MHz ZOL* 2170 MHz VDD = 28 V, IDQ = 750 mA, Pout = 90 W (PEP) f MHz Zin ZOL* Zin 2110 3.03 + j3.40 0.92 + j1.67 2140 3.02 + j3.46 0.97 + j1.80 2170 2.60 + j3.50 0.90 + j1.52 = Complex conjugate of the source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given power, voltage, IMD, bias current and frequency. Input Matching Network Output Matching Network Device Under Test Z in Z * OL Figure 9. Series Equivalent Input and Output Impedance MRF21090 MRF21090S 5.2-574 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF21120 MRF21120S RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. * W-CDMA Performance @ -45 dBc, 5 MHz Offset, 15 DTCH, 1 Perch Output Power -- 14 Watts (Avg.) Power Gain -- 11.5 dB Efficiency -- 16% * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency, High Linearity * Integrated ESD Protection * Ease of Design for Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 28 Vdc, 2170 MHz, 120 Watts (CW) Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters 2170 MHz, 120 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 375D-01, STYLE 2 (MRF21120) CASE 375E-01, STYLE 2 (MRF21120S) MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS +15, -0.5 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 389 2.22 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Operating Junction Temperature ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 2 (Typical) Machine Model M3 (Typical) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.45 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 2 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF21120 MRF21120S 5.2-575 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc ) IGSS -- -- 1 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0) IDSS -- -- 10 Adc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs -- 4.8 -- S Gate Threshold Voltage (VDS = 10 V, ID = 200 A) VGS(th) 2.5 3 3.8 Vdc Gate Quiescent Voltage (VDS = 28 V, ID = 500 mA) VGS(Q) 3 3.9 5 Vdc Drain-Source On-Voltage (VGS = 10 V, ID = 2 A) VDS(on) -- 0.38 0.5 Vdc Crss -- 2.8 -- pF 10.5 10.4 11.4 11.2 -- -- 30 34.5 -- -- -- -31 -31 -28 -27 IRL 9 12 -- dB Gps -- 11.5 -- dB Gps -- 11.5 -- dB -- 34.5 -- % IMD -- -31 -- dB IRL -- 12 -- dB P1dB -- 120 -- Watts Gps -- 10.5 -- dB OFF CHARACTERISTICS (1) Drain-Source Breakdown Voltage (VGS = 0, ID = 20 Adc) ON CHARACTERISTICS (1) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) (2) Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2170.0 MHz, f2 = 2170.1 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2170.0 MHz, f2 = 2170.1 MHz) Intermodulation Distortion (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2170.0 MHz, f2 = 2170.1 MHz) Gps 500 mA, MRF21120 MRF21120S IMD 500 mA, MRF21120 MRF21120S 500 mA, Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2140.0 MHz, f2 = 2140.1 MHz) 500 mA, Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2110.0 MHz, f2 = 2110.1 MHz) 500 mA, Drain Efficiency (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2110.0 MHz, f2 = 2110.1 MHz) 500 mA, Intermodulation Distortion (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2110.0 MHz, f2 = 2110.1 MHz) 500 mA, Input Return Loss (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2110.0 MHz, f2 = 2110.1 MHz) 500 mA, Power Output, 1 dB Compression Point (VDD = 28 Vdc, CW, IDQ = 2 500 mA, f1 = 2170.0 MHz) MRF21120 MRF21120S 5.2-576 % 500 mA, Input Return Loss (VDD = 28 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 2170.0 MHz, f2 = 2170.1 MHz) Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 120 W CW, IDQ = 2 f1 = 2170.0 MHz) dB dB 500 mA, MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Characteristic Drain Efficiency (VDD = 28 Vdc, Pout = 120 W CW, IDQ = 2 f1 = 2170.0 MHz) Symbol Min Typ Max Unit -- 42 -- % 500 mA, Output Mismatch Stress (VDD = 28 Vdc, Pout = 120 W CW, IDQ = 2 500 mA, f = 2.17 GHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) No Degradation In Output Power Before and After Test (1) Each side of device measured separately. (2) Device measured in push-pull configuration. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF21120 MRF21120S 5.2-577 VDD + C31 C30 C33 C17 C16 C14 C15 R1 Z6 RF INPUT Z8 C29 Z12 C3 Z14 Z16 Z18 Z41 Z42 RF OUTPUT C27 C12 C13 C5 L3 C7 Z24 R5 Z10 C35 L5 Z40 + Z4 C34 C28 + R3 C19 C32 + + + B1 VGG + + Z26 Z30 Z32 Z34 C9 Z36 Z28 Z20 Z22 Z38 Z1 COAX1 Z2 DUT COAX2 Z7 L1 Z5 C1 C2 Z9 Z11 COAX3 C8 L2 Z13 C4 Z15 Z17 Z19 COAX4 Z21 Z23 Z25 R2 C11 Z27 Z31 Z33 Z35 C10 Z37 Z29 Z39 R6 L4 C6 + C22 B2 VGG + + C20 C37 C36 + C25 R4 C39 C24 C23 C38 C21 VDD + C40 B1, B2 C1, C2, C12 C3, C4, C9, C10 C5 C6, C7 C8 C11 C13, C20, C29, C37 C14, C21, C28, C38 C15, C22, C27, C34, C36, C42 C16, C23, C33, C43 C17, C24, C32, C41 C19, C25 C30, C39 C31, C40 C35, C44 Coax1, Coax2 Coax3, Coax4 L1, L5 L2 L3, L4 R1, R2 R3, R4 R5, R6 Z1 Ferrite Bead, Fair Rite 0.6 - 4.5 pF, Variable Capacitor, Johanson Gigatrim 10 pF, B Case Chip Capacitor, ATC 0.4 - 2.5 pF, Variable Capacitor, Johanson Gigatrim 2.0 pF, B Case Chip Capacitor, ATC 0.5 pF, B Case Chip Capacitor, ATC 0.2 pF, B Case Chip Capacitor, ATC 5.1 pF, B Case Chip Capacitor, ATC 91 pF, B Case Chip Capacitor, ATC 22 F, 35 V, Tantalum Surface Mount Chip Capacitor, Kemet 0.039 F, B Case Chip Capacitor, ATC 1000 pF, B Case Chip Capacitor, ATC 0.022 F, B Case Chip Capacitor, ATC 1.0 F, 35 V, Tantalum Surface Mount Chip Capacitor, Kemet 100 F, 50 V, Electrolytic Capacitor, Sprague 470 F, 63 V, Electrolytic Capacitor, Sprague 25 , Semi Rigid Coax, 70 mil OD, 1.05 Long 50 , Semi Rigid Coax, 85 mil OD, 1.05 Long 5.0 nH, Minispring Inductor, Coilcraft 8.0 nH, Minispring Inductor, Coilcraft 7.15 nH, Microspring Inductor, Coilcraft 1 k, Fixed Metal Film Resistor, 1/4 W, Dale 270 , Fixed Film Chip Resistor, 1/8 W, Dale 1.2 k, Fixed Film Chip Resistor, 1/8 W, Dale 0.150 x 0.080 Microstrip + + C41 Z2 Z4, Z5 Z6, Z7 Z8, Z9 Z10, Z11 Z12, Z13 Z14, Z15 Z16, Z17 Z18, Z19 Z20, Z21 Z22, Z23 Z24, Z25 Z26, Z27 Z28, Z29 Z30, Z31 Z32, Z33 Z34, Z35 Z36, Z37 Z38, Z39 Z40 Z41 Z42 Board Material Connectors C42 C43 C44 0.320 x 0.080 Microstrip 1.050 x 0.080 Microstrip 0.120 x 0.080 Microstrip 0.140 x 0.080 Microstrip 0.610 x 0.080 Microstrip 0.135 x 0.080 Microstrip 0.130 x 0.080 Microstrip 0.300 x 0.350 Microstrip 0.150 x 0.500 Microstrip 0.075 x 0.500 Microstrip 0.330 x 0.500 Microstrip 0.100 x 0.550 Microstrip 0.175 x 0.550 Microstrip 0.045 x 0.550 Microstrip 0.190 x 0.325 Microstrip 0.080 x 0.325 Microstrip 0.515 x 0.080 Microstrip 0.020 x 0.080 Microstrip 0.565 x 0.080 Microstrip 0.100 x 0.080 Microstrip 0.470 x 0.080 Microstrip 0.100 x 0.080 Microstrip 0.03 Teflon, r = 2.55 Copper Clad, 2 oz. Cu N-Type Panel Mount, Stripline Figure 1. 2.1 - 2.2 GHz Broadband Test Circuit Schematic MRF21120 MRF21120S 5.2-578 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA + C35 C34 226 35K 649 C19 C31 C15 C17 226 35K 649 640 50K 105 C16 C14 B1 R3 VDD C32 C33 C30 C29 226 35K 649 VGG C28 C27 C13 R5 C7 L3 R1 L5 C1 C2 C3 C9 C8 C11 L2 C4 C10 L1 R2 C12 C6 R6 L4 C20 226 35K 649 R4 B2 C23 C24 226 35K 649 C36 C37 C21 C39 C22 640 50K 105 VGG C5 C38 C40 C41 C43 VDD C25 226 35K 649 C42 C44 Figure 2. Component Parts Layout MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF21120 MRF21120S 5.2-579 TYPICAL CHARACTERISTICS 1800 mA 1500 mA 1300 mA 1100 mA 12 11 1000 mA 850 mA VDD = 28 Vdc f1 = 2170.0 MHz f2 = 2170.1 MHz 10 600 mA 9 0.10 10 1.0 Pout, OUTPUT POWER (WATTS) PEP -20 -30 1800 mA -40 600 mA 1100 mA 1.0 10 100 Pout, OUTPUT POWER (WATTS) PEP 0.10 Figure 4. Intermodulation Distortion versus Output Power 40 35 10 VDD = 28 V, IDQ = 2 x 500 mA Two-Tone, 100 kHz Tone Spacing 9 8 -24 -26 VSWR 7 -28 6 -30 IMD 5 2100 2120 2160 2140 f, FREQUENCY (MHz) 2180 -32 2200 -10 1.5 20 0 -20 -40 ACPR UP 1.0 10 A -22.77 dBm 2.17000000 GHz -2.95 dBm CH PWR -45.14 dB ACR UP -45.45 dB ACR LOW -80 -90 1.0 c11 c11 cu1 cu1 -100 c0 c0 1.5 MHz Span 15 MHz 13 -60 80 12 60 Gps 11 40 10 20 9 8 0 VDD = 28 V, IDQ = 2 x 500 mA f = 2170.0 MHz, f2 = 2170.1 MHz -20 7 -40 IMD 6 5 0.10 1.0 -60 10 100 Pout, OUTPUT POWER (WATTS) AVG. Pout, OUTPUT POWER (WATTS) PEP Figure 7. Power Gain, Efficiency, ACPR versus Output Power (W-CDMA) Figure 8. Power Gain, Efficiency, IMD versus Output Power MRF21120 MRF21120S 5.2-580 1RM -70 Gps , POWER GAIN (dB) 10 2 dBm -60 Center 2.17 GHz , EFFICIENCY (%) ACPR (dB) Gps , POWER GAIN (dB) 40 4 ACPR DOWN Unit Figure 6. 2.17 GHz W-CDMA Mask at 14 Watts (Avg.), 5 MHz Offset, 15 DTCH, 1 Perch 12 6 10 dB -50 2.0 60 VDD = 28 V IDQ = 2 x 750 mA f = 2170 MHz RF Att -40 Gps 8 1 -30 Figure 5. Class AB Broadband Circuit Performance 14 1 [T1] -20 VSWR Gps , POWER GAIN (dB) 45 30 kHZ 1 MHz 2s RBW VBW SWT MARKER 1 [T1] -22.77 dBm 2.17000000 GHz Ref Lv1 -5 dBm IMD, INTERMODULATION , EFFICIENCY (%) DISTORTION (dBc) 50 Gps 11 VDD = 28 Vdc f1 = 2170.0 MHz f2 = 2170.1 MHz 1000 mA -60 Figure 3. Power Gain versus Output Power 12 850 mA -50 100 13 1500 mA 1300 mA , EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) Gps , POWER GAIN (dB) 13 IMD, INTERMODULATION DISTORTION (dBc) 14 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA -80 f = 2170 MHz Zin 2110 MHz 2110 MHz Zo = 3 VDD = 28 V, IDQ = 2 f MHz Zin ZOL* f = 2170 MHz 500 mA, Pout = 120 Watts PEP ZOL* Zin 2110 3.7 + j2.0 4.9 + j2.8 2140 3.5 + j2.4 5.1 + j2.7 2170 3.1 + j2.5 5.2 + j2.5 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Input Matching Network Output Matching Network Device Under Test Z in Z * OL Figure 9. Series Equivalent Input and Output Impedance MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF21120 MRF21120S 5.2-581 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF21125 MRF21125S RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n c l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. * Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 1600 mA, f1 = 2.1125 GHz, f2 = 2.1225 GHz, Channel bandwidth = 3.84 MHz, adjacent channels at 5 MHz , ACPR and IM3 measured in 3.84 MHz bandwidth. Peak/Avg = 8.5 dB @ 0.01% probability on CCDF. Output Power: 20 Watts Efficiency: 18% Gain: 13 dB IM3: -43 dBc ACPR: -45 dBc * 100% Tested under 2-carrier W-CDMA * Internally Matched for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Ease of Design for Gain and Insertion Phase Flatness * Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 125 Watts (CW) Output Power * Excellent Thermal Stability 2170 MHz, 125 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs CASE 465B-02, STYLE 1 (MRF21125) CASE 465C-01, STYLE 1 (MRF21125S) MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Rating VDSS 65 Vdc Gate-Source Voltage VGS +15, -0.5 Vdc Total Device Dissipation @ TC = 25C Derate above 25C PD 330 1.89 Watts W/C Storage Temperature Range Tstg - 65 to +150 C TJ 200 C Operating Junction Temperature ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 2 (Typical) Machine Model M3 (Typical) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RJC 0.53 C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 2 MRF21125 MRF21125S 5.2-582 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 -- -- Vdc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS -- -- 1 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0) IDSS -- -- 10 Adc Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) gfs -- 10.8 -- S Gate Threshold Voltage (VDS = 10 V, ID = 300 A) VGS(th) 2 -- 4 Vdc Gate Quiescent Voltage (VDS = 28 V, ID = 1300 mA) VGS(Q) 2.5 3.9 4.5 Vdc Drain-Source On-Voltage (VGS = 10 V, ID = 1 A) VDS(on) -- 0.12 -- Vdc Crss -- 5.4 -- pF OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 100 Adc) ON CHARACTERISTICS DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture) 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth, IM3 measured in 3.84 MHz Bandwidth. Peak/Avg = 8.5 dB @ 0.01% probability on CCDF. Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 20 W Avg, 2-carrier W-CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Gps 12 13 -- dB Drain Efficiency (VDD = 28 Vdc, Pout = 20 W Avg, 2-carrier W-CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) 17 18 -- % Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 20 W Avg, 2-carrier W-CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured at f1 -15 MHz and f2 +15 MHz referenced to carrier channel power.) IM3 -- -43 -40 dBc Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 20 W Avg, 2-carrier W-CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured at f1 -10 MHz and f2 +10 MHz referenced to carrier channel power.) ACPR -- -45 -40 dBc Input Return Loss (VDD = 28 Vdc, Pout = 20 W Avg, 2-carrier W-CDMA, IDQ = 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) IRL -- -12 -9.0 dB Output Mismatch Stress (VDD = 28 Vdc, Pout = 125 W CW, IDQ = 1600 mA, f = 2170 MHz, VSWR = 5:1, All Phase Angles at Frequency of Test) No Degradation In Output Power Before and After Test (1) Part is internally matched both on input and output. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF21125 MRF21125S 5.2-583 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) Gps -- 12 -- dB Drain Efficiency (VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) -- 34 -- % Intermodulation Distortion (VDD = 28 Vdc, Pout = 125 W PEP, IDQ = 1600 mA, f1 = 2110 MHz, f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz) IMD -- -30 -- dBc Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 125 W CW, IDQ = 1600 mA, f1 = 2170.0 MHz) Gps -- 11.5 -- dB Drain Efficiency (VDD = 28 Vdc, Pout = 125 W CW, IDQ = 1600 mA, f = 2170.0 MHz) -- 46 -- % TYPICAL TWO-TONE PERFORMANCE (In Motorola Test Fixture) TYPICAL CW PERFORMANCE MRF21125 MRF21125S 5.2-584 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA B1 R4 VGG + R1 R3 R2 + C2 C3 + C4 C5 C6 Z6 RF INPUT Z1 Z2 Z3 Z4 C7 C8 C9 C10 + C11 + C12 C13 C14 Z7 Z5 C1 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 VDD + W1 Z8 Z9 Z10 Z11 C15 DUT 1.212 x 0.082 Microstrip 0.236 x 0.082 Microstrip 0.086 x 0.254 Microstrip 0.357 x 0.082 Microstrip 0.274 x 1.030 Microstrip 0.466 x 0.050 Microstrip 0.501 x 0.050 Microstrip 0.600 x 1.056 Microstrip Z13 Z12 Z9 Z10 Z11 Z12 Z13 Raw Board Material RF OUTPUT C16 0.179 x 0.219 Microstrip 0.100 x 0.336 Microstrip 0.534 x 0.142 Microstrip 0.089 x 0.080 Microstrip 0.620 x 0.080 Microstrip 0.030 Glass Teflon, 2 oz Copper, 3 x 5 Dimensions, Arlon GX0300-55-22, r = 2.55 Figure 1. MRF21125 Test Circuit Schematic Table 1. MRF21125 Component Designations and Values Designators Description C1 9.1 pF, ATC RF Chip Capacitor, Case "B", #100B9R1CCA500X C2, C4, C11, C12 22 F, 35 V, Tantalum Surface Mount Chip Capacitors, Kemet, #T491X226K035AS4394 C3, C7 20000 pF, ATC RF Chip Capacitors, Case "B", #100B203JCA50X C5, C14 5.1 pF, ATC RF Chip Capacitors, Case "B", #100B5R1CCA500X C6 100000 pF, ATC RF Chip Capacitor, Case "B", #100B104JCA50X C8 10000 pF, ATC RF Chip Capacitor, Case "B", #100B103JCA50X C9 7.5 pF, ATC RF Chip Capacitor, Case "B", #100B7R5CCA500X C10 1.2 pF, ATC RF Chip Capacitor, Case "B", #100B1R2CCA500X C13 0.1 F, Chip Capacitor, Kemet, #CDR33BX104AKWS C15 16 pF, ATC RF Chip Capacitor, Case "B", #100B160KP500X C16 0.6 - 4.5 pF, Variable Capacitor, Johanson Gigatrim, #27271SL R1 1.0 k, 1/8 W Chip Resistor R2 560 k, 1/8 W Chip Resistor R3 4.7 , 1/8 W Chip Resistor R4 12 , 1/8 W Chip Resistor B1 Ferrite Bead (Square), Fair Rite, #2743019447 W1 Solid Copper Buss Wire, 16 AWG MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MRF21125 MRF21125S 5.2-585 VGG V DD C11 C9 C10 B1 R1 R2 R3 C5 C8 R4 C7 C6 C12 W1 C13 C2 C3 C4 C14 C15 C1 C16 MRF21125 Rev A Figure 2. MRF21125 Test Circuit Component Layout MRF21125 MRF21125S 5.2-586 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA -20 3.84 MHz Channel BW -40 -50 (dB) -60 -70 -80 -90 -100 -110 -ACPR @ +ACPR @ 3.84 MHz BW 3.84 MHz BW -IM3 @ 3.84 MHz BW +IM3 @ 3.84 MHz BW -120 30 IM3 5 46 42 38 128 Pout 112 P1dB = 135 W P3dB = 156 W 34 96 30 80 26 64 22 48 18 14 Gps 32 2 4 6 8 10 12 Pin, INPUT POWER (WATTS) 14 10 6 16 , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 50 VDD = 28 V IDQ = 1600 mA f = 2120 MHz , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) Pout , OUTPUT POWER (WATTS) -45 -50 0 ACPR -55 -5 -60 4 12 20 28 8 16 24 Pout, OUTPUT POWER (WATTS, AVG. (W-CDMA)) 32 Figure 4. 2 Carrier W-CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power 16 0 40 0 35 30 -5 -10 IRL VDD = 28 V Pout = 125 Watts (PEP) IDQ = 1600 mA Two Tone Measurement, 10 MHz Tone Spacing 25 20 -15 -20 15 -25 Gps 10 -30 IMD -35 5 0 2080 Figure 5. CW Performance 2100 2140 2120 2160 f, FREQUENCY (MHz) 2180 -40 2200 Figure 6. Broadband Linearity Performance -25 14 2000 mA VDD = 28 V f1 = 2.1125 GHz, f2 = 2.1225 GHz Two Tone Measurement, 10 MHz Tone Spacing -30 1600 mA -35 G ps , POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) -35 -10 176 0 -30 -40 Figure 3. 2 Carrier (10 MHz spacing) W-CDMA Spectrum 144 -25 10 f, FREQUENCY (MHz) 160 -20 VDD = 28 V, IDQ = 1600 mA, f1 = 2.1125 GHz, f2 = 2.1225 GHz 25 Channel Spacing (Channel Bandwidth): 10 MHz @ 3.84 MHz BW Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF) 20 Gps 15 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) -30 2000 mA -40 1000 mA -45 1600 mA -50 1300 mA 13 1300 mA 1000 mA 12 VDD = 28 V f1 = 2.1125 GHz, f2 = 2.1225 GHz Two Tone Measurement, 10 MHz Tone Spacing 11 -55 10 -60 1 10 IM3 (dBc), ACPR (dBc) , DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) TYPICAL CHARACTERISTICS 100 Pout, OUTPUT POWER (WATTS) PEP Figure 7. Intermodulation Distortion versus Output Power MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 8. Power Gain versus Output Power MRF21125 MRF21125S 5.2-587 Zin f = 2110 MHz 2170 MHz VDD = 28 V, IDQ = 1600 mA, Pout = 20 Wavg., 2 - Carrier W-CDMA f MHz Zo = 10 Zin f = 2110 MHz ZOL* Zin ZOL* 2110 3.81 + j6.86 1.56 - j1.58 2140 4.33 + j7.90 1.53 - j1.90 2170 4.84 + j8.46 1.48 - j2.26 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. 2170 MHz Note 1: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Note 2: Measurements were taken on the MRF21125 test circuit with SMA Launchers. Input Matching Network Output Matching Network Device Under Test Z in Z * OL Figure 9. Series Equivalent Input and Output Impedance MRF21125 MRF21125S 5.2-588 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TPV8100B The TPV8100B is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. Including double input and output matching networks, the TPV8100B features high impedances. It can easily operate in a full 470 MHz to 860 MHz bandwidth in a single and simple circuit. 150 W, 470 - 860 MHz NPN SILICON RF POWER TRANSISTOR * To be used class AB for TV band IV and V. * Specified 28 Volts, 860 MHz Characteristics Output Power = 125 Watts (peak sync.) Output Power = 100 Watts (CW) Minimum Gain = 8.5 dB * Specified 32 Volts, 860 MHz Characteristics Output Power = 150 Watts (peak sync.) * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. CASE 398-03, STYLE 1 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage Rating VCER 40 Vdc Collector-Base Voltage VCBO 65 Vdc Emitter-Base Voltage VEBO 4 Vdc Collector-Current -- Continuous IC 12 Adc Total Device Dissipation @ 25C Case Derate above 25C PD 215 1.25 Watts W/C Operating Junction Temperature Storage Temperature Range TJ 200 C Tstg - 65 to +150 C Symbol Max Unit RJC 0.8 C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 10 mA, Rbe = 75 ) V(BR)CER 30 -- -- Vdc Collector-Emitter Breakdown Voltage (IC = 10 mAdc) V(BR)EBO 4 -- -- Vdc Collector-Base Breakdown Voltage (IE = 20 mAdc) V(BR)CBO 65 -- -- Vdc ICER -- -- 10 mA Characteristic OFF CHARACTERISTICS Collector-Emitter Leakage (VCE = 28 V, Rbe = 75 ) NOTE: 1. Thermal resistance is determined under specified RF operating condition. (continued) REV 6 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA TPV8100B 5.2-589 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit hFE 30 -- 120 -- Cob -- 44 -- pF Gp 8.5 9.5 -- dB 55 58 -- % Pout 100 110 -- W Peak Output Power (synch.) (VCC = 28 V, ICQ = 2 x 50 mA, f = 860 MHz) Pout 125 135 -- W Peak Output Power (synch.) (VCC = 32 V, ICQ = 2 x 25 mA, f = 860 MHz) Pout 150 160 -- W Recommended Quiescent Current ICQ -- -- 2 x 0.3 A ON CHARACTERISTICS DC Current Gain (IC = 2 Adc, VCE = 10 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (each side) (2) (VCB = 28 V, IE = 0, f = 1 MHz) FUNCTIONAL TESTS IN CW (SOUND) Common-Emitter Amplifier Power Gain (VCC = 28 V, Pout = 100 W, ICQ = 2 x 50 mA, f = 860 MHz) Collector Efficiency (VCC = 28 V, Pout = 100 W, IQ = 2 x 50 mA, f = 860 MHz) Output Power @ 1 dB Compression (Pref = 25 W) (VCC = 28 V, ICQ = 2 x 50 mA, f = 860 MHz) FUNCTIONAL TESTS IN VIDEO (STANDARD BLACK LEVEL) NOTE: 2. Value of "Cob" is that of die only. It is not measurable in TPV8100B because of internal matching network. Zin 665 860 f = 470 MHz f = 860 MHz 470 ZOL* 0.0 665 Zo = 10 8 f (MHz) Zin (Ohms) ZOL* (Ohms) 470 665 860 1.95 + j3.67 3.65 + j6.82 6.66 + j13.8 10.0 + j9.50 9.23 + j1.30 4.45 + j5.22 ZOL* = Conjugate of optimum load impedance into which ZOL* = the device operates at a given output power, ZOL* = voltage, current and frequency. NOTE: Zin & ZOL* are given from base-to-base and NOTE: collector-to-collector respectively. Input and Output impedances with circuit tuned for maximum linearity @ VCC = 28 V / ICQ = 2 x 50 mA / Pout = 100 W Figure 1. Series Equivalent Input/Output Impedances TPV8100B 5.2-590 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA IN 50 OUT 50 C4 L1 C5 R1 C6 C12 L3 C7 L2 C8 L4 VC VB R2 C1 C2 C9 D.U.T. + C10 + C11 C3 C1, C9 -- Chip Capacitor 15 nF C2, C10 -- Chip Capacitor 100 nF C3, C11 -- Chip Capacitor 100 F/40 V C4 -- Chip Capacitor 15 pF ATC 100A C5 -- Chip Capacitor 5.6 pF ATC 100A C6 -- Trimmer Capacitor 1- 4 pF C7 -- Chip Capacitor 12 pF ATC 100B C8 -- Chip Capacitor 15 pF ATC 100A C12 -- Chip Capacitor 12 pF ATC 100A L1, L3 -- Coaxial Wire 25 /85 Mils/40 mm L2, L4 -- Printed Board Inductance R1, R2 -- Chip Resistor 1 0805 5% Figure 2. Test Circuit TYPICAL CHARACTERISTICS CW -- WIDEBAND 60 9 Pout = 100 W VCE = 28 V ICQ = 2 x 50 mA 8 450 , EFFICIENCY (%) G P, POWER GAIN (dB) 10 50 Pout = 100 W VCE = 28 V ICQ = 2 x 50 mA 40 900 450 900 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 3. Power Gain versus Frequency Figure 4. Collector Efficiency versus Frequency MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA TPV8100B 5.2-591 TYPICAL VIDEO CHARACTERISTICS @ f = 800 MHz VCE = 28 V 100 IRE 150 Po , OUTPUT POWER (WATTS) Po , OUTPUT POWER (WATTS) 150 100 TEST CONDITIONS: STANDARD BLACK LEVEL CHANNEL 61 ICQ = 2 x 50 mA VCE = 28 V 50 20 VIDEO SIGNAL Black 0 40 2 4 6 8 10 12 Pin, INPUT POWER (WATTS) 14 16 100 TEST CONDITIONS: STANDARD BLACK LEVEL CHANNEL 61 ICQ = 2 x 300 mA VCE = 28 V 50 20 2 4 Figure 5. Peak Output Power versus Peak Input Power Pout = 100 W Pout = 130 W % 100 90 80 70 60 50 40 30 20 10 0 8 10 12 Pin, INPUT POWER (WATTS) 14 16 Figure 6. Peak Output Power versus Peak Input Power TEST CONDITIONS: DIFF. Gain, 10 Steps Channel 61 VCE = 28 V ICQ = 2 x 50 mA 6 100 VIDEO SIGNAL IRE 0 40 ICQ = 2 x 150 mA Pout = 100 W Pout = 130 W % 100 90 80 70 60 50 40 30 20 10 0 ICQ = 2 x 300 mA Pout = 100 W Pout = 110 W Figure 7. Gain versus Output Power TPV8100B 5.2-592 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA TYPICAL VIDEO CHARACTERISTICS @ f = 800 MHz VCE = 32 V 100 IRE 0 40 VIDEO SIGNAL Black Po , OUTPUT POWER (WATTS) 150 VCE = 32 V, ICQ = 2 x 25 mA 100 TEST CONDITIONS: STANDARD BLACK LEVEL CHANNEL 61 ICQ = 2 x 25 mA VCE = 32 V 50 20 2 4 6 8 10 12 Pin, INPUT POWER (WATTS) 14 16 Pout Gain 25 W 50 W 100 W 120 W 130 W 140 W 150 W 160 W 10.6 dB 11.1 dB 11.3 dB 11.1 dB 11.0 dB 10.7 dB 10.5 dB 10.2 dB (see curve on left) Figure 8. Peak Output Power versus Peak Input Power TEST CONDITIONS: DIFF. Gain, 10 Steps Channel 61 VCE = 32 V ICQ = 2 x 25 mA Pout = 100 W 100 VIDEO SIGNAL IRE 0 40 % % 100 90 80 70 60 50 40 30 20 10 0 100 90 80 70 60 50 40 30 20 10 0 Pout = 130 W Pout = 150 W Figure 9. Differential Gain MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA TPV8100B 5.2-593 Vb EE EE EE EE C4 C1 C2 R1 Vc C9 C10 C5 C6 C7 C8 R2 C3 EE EE EE EE C11 Figure 10. Components View TPV8100B 5.2-594 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Chapter Six RF Amplifier Modules Section One . . . . . . . . . . . 6.1-0 RF Amplifier Modules - Selector Guide Section Two . . . . . . . . . . . 6.2-0 RF Amplifier Modules - Data Sheets MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 6.0-1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 6.0-2 Section One Selector Guide Motorola RF Amplifier Modules/ICs Motorola's RF portfolio includes many hybrid designs optimized to perform either in narrowband base station transmitter applications, or in broadband linear amplifiers. Motorola modules feature two or more active transistors (LDMOS, GaAs, or Bipolar die technology) and their associated 50 ohm matching networks. Circuit substrate and metallization have been selected for optimum performance and reliability. For PA designers, hybrid modules offer the benefits of small and less complex system designs, in less time and at a lower overall cost. Table of Contents RF Amplifier Modules/ICs . . . . . . . . . . . . . . . . . . . . . . . . Base Stations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Wideband Linear Amplifiers . . . . . . . . . . . . . . . . . . . Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Page 6.1-1 6.1-2 6.1-3 6.1-4 SELECTOR GUIDE 6.1-1 Motorola RF Amplifier Modules/ICs Complete amplifiers with 50 ohm input and output impedances are available for all popular base station transmitter systems, including GSM and CDMA, covering frequencies from 800 MHz up to 2.2 GHz. Base Stations Designed for applications such as macrocell drivers and microcell output stage, these class AB amplifiers are ideal for base station systems at 900, 1800 and 1900 MHz, with power requirements up to 30 watts. Table 1. Base Stations Device Frequency MHz P1dB Watts Gain (Min) dB Supply Voltage Volts Class System Application Die Technology Package/Style MHVIC910HR2(18e,46a) MHW1810-1 MHW1810-2 MHW1910-1 MHPA19030(46a) MHPA21030(46a) 921-960 1805-1880 1805-1880 1930-1990 1930-1990 2110-2170 10 10 10 10 30 30 38 24 32 24 25 25 26 26 26 26 26 26 AB AB AB AB AB AB GSM900 GSM1800 GSM1800 GSM1900 PCS1900 W-CDMA LDMOS-IC LDMOS LDMOS LDMOS LDMOS LDMOS 978/- 301AW/1 301AW/1 301AW/1 301AP/1 301AP/1 Table 2. Base Station Drivers These 50 ohm amplifiers are recommended for modern multi-tone CDMA, TDMA and UMTS base station pre-driver applications. Their high third-order intercept point, tight phase and gain control, and excellent group delay characteristics make these devices ideal for use in high-power feedforward loops. Ultra-Linear (for CDMA, W-CDMA, TDMA, Analog) - Class A (LDMOS Die) - Lateral MOSFETs Device MHL9838 MHL9236 MHL9236M MHL9318 MHL18336 (46a) MHL18936 (46a) MHL19338 MHL19936 MHL21336 Frequency Band MHz VDD (Nom.) Volts IDD (Nom.) mA Gain (Nom.) dB Gain Flatness (Typ) dB P1dB (Typ) dBm 3rd Order Intercept (Typ) dBm NF (Typ) dB Case/ Style 800 - 925 800 - 960 800 - 960 860 - 900 1800 - 1900 1800 - 1900 1900 - 2000 1900 - 2000 2110 - 2170 28 26 26 28 26 26 28 26 26 770 550 550 500 500 1400 500 1400 500 31 30.5 30.5 17.5 30 30 30 29 31 .1 .1 .1 .1 .2 .2 .1 .2 .15 39 34 34 35.5 36 41 36 41 35 50 47 47 49 46 51 46 49.5 45 3.7 3.5 3.5 3.0 4.2 4.2 4.2 4.2 4.5 301AP/1 301AP/1 301AP/2 301AS/1 301AP/1 301AY/1 301AP/1 301AY/1 301AP/1 (18)Tape and Reel Packaging Option Available by adding suffix: a) R1 = 500 units; b) R2 = 2,500 units; c) T1 = 3,000 units; d) T3 = 10,000 units; e) R2 = 1,500 units; f) T1 = 1,000 units; g) R2 = 4,000 units; h) R1 = 1,000 units; i) R3 = 250 units; j) T1 = 500 units; k) R2 = 450 units. (46)To be introduced: a) 1Q01; b) 2Q01; c) 3Q01 New Product SELECTOR GUIDE 6.1-2 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Base Stations (continued) Wideband Linear Amplifiers Table 1. Standard 50 Ohm Linear Hybrid This series of RF linear hybrid amplifier has been optimized for wideband, 50 ohm applications. These amplifiers were designed for multi-purpose RF applications where linearity, dynamic range and wide bandwidth are of primary concern. The MHL series utilizes a new case style that provides microstrip input and output connections. Device MHL8018 MHL8115 MHL8118 Frequency Band MHz VCC (Nom.) Volts ICC (Nom.) mA Gain/Freq. (Typ) dB/MHz Gain Flatness (Typ) dB 40- 1000 40- 1000 40- 1000 28 15 28 210 700 400 18.5/900 17.5/900 17.5/900 1 1 1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA P1dB (Typ) dBm 3rd Order Intercept Point/Freq. (Typ) dBm/MHz NF/Freq. (Typ) dB/MHz Case/ Style 26 30 30 38/1000 41.5/1000 41.5/1000 7.5/1000 8.5/1000 8.5/1000 448/1 448/2 448/1 SELECTOR GUIDE 6.1-3 RF Amplifier Modules Packages CASE 301AP STYLE 1, 2 CASE 301AW STYLE 1 CASE 448 STYLE 1, 2 CASE 301AS STYLE 1 CASE 301AY STYLE 1 CASE 978 SCALE 1:1 SELECTOR GUIDE 6.1-4 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Section Two Motorola RF Amplifier Modules - Data Sheets Device Number Page Number MHL8018 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2-3 MHL8115 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2-5 MHL8118 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2-7 MHL9236 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2-9 MHL9236M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2-9 MHL9318 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2-12 MHL9838 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2-15 MHL19338 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2-18 MHL19936 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2-19 MHL21336 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2-20 MHW1810-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2-21 MHW1810-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2-21 MHW1910-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.2-27 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA DATA SHEETS 6.2-1 DATA SHEETS 6.2-2 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA MHL8018 The RF Line UHF Linear Amplifier Designed for linear amplifier applications in 50 ohm systems requiring wide bandwidth, low noise, and low distortion. Internal DC blocking on RF ports reduces external component count and related circuit area. This hybrid utilizes push-pull circuit design. * Supply Voltage: 28 Vdc * Third Order Intercept: 38 dBm Typ * Power Gain: 18.5 dB Typ (@ f = 900 MHz) * Excellent Phase Linearity and Group Delay Characteristics * 50 Ohm Input/Output Impedances 400 mW, 18.5 dB 40 - 1000 MHz LINEAR AMPLIFIERS CASE 448-02, STYLE 1 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Value Unit VCC 32 Vdc RF Input Power Pin +14 dBm Storage Temperature Range Tstg - 40 to +100 C Operating Case Temperature Range TC - 20 to +100 C DC Supply Voltage ELECTRICAL CHARACTERISTICS (TC = +25C; VCC = 28 Vdc; 50 System) Characteristic Supply Current Symbol Min Typ Max Unit IDC -- 210 240 mA Power Gain (f = 900 MHz) PG 17.5 18.5 19.5 dB Gain Flatness (f = 40 - 1000 MHz) FL -- 1.0 2.0 dB Power Output @ 1 dB Comp. (f = 900 MHz) Pout 1 dB 25 26 -- dBm ITO 37 38 -- dBm VSWR -- -- -- -- 2.0:1 2.6:1 NF -- -- 6.5 7.5 8.0 9.0 dB Second Harmonic Distortion (Po = 100 mW, f2H = 1000 MHz) dso -- - 50 - 40 dB Second Order Intermodulation Distortion (Po = 2.75 dBm, f1 = 373 MHz, f2 = 450 MHz) IM2 -- -- - 60 dB Intermodulation Distortion, 3 Tone (f = 860 MHz, Psync = 200 mW) IM3 -- - 60 -- dB Third Order Intercept (f1 = 879 MHz, f2 = 884 MHz) Input/Output VSWR (f = 40 - 900 MHz) (f = 900 - 1000 MHz) Noise Figure, Broadband (f = 500 MHz) (f = 1000 MHz) REV 2 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MHL8018 6.2-3 PIN CONFIGURATION 1 2 3 4 5 OUTPUT INPUT R1 C1 C2 VCC C1, C2 0.01 F (CHIP) R1 = 200 , 1 WATT Figure 1. MHL8018 External Connections MHL8018 6.2-4 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA MHL8115 The RF Line UHF Linear Amplifier Designed for linear amplifier applications in 50 Ohm systems requiring wide bandwidth, low noise, and low distortion. Internal DC blocking on RF ports reduces external component count and related circuit area. This hybrid utilizes push-pull circuit design. * Supply Voltage: 15 Vdc * Third Order Intercept: 41.5 dBm Typ * Power Gain: 17.5 dB Typ (@ 900 MHz) * Excellent Phase Linearity and Group Delay Characteristics * 50 Ohm Input/Output Impedances 1 W, 17.5 dB 50 - 1000 MHz LINEAR AMPLIFIERS CASE 448-02, STYLE 2 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Value Unit VCC 18 Vdc RF Input Power Pin +20 dBm Storage Temperature Range Tstg - 40 to +100 C Operating Case Temperature Range TC - 20 to +100 C DC Supply Voltage ELECTRICAL CHARACTERISTICS (TC = +25C; VCC = 15 Vdc; 50 System) Characteristic Supply Current Symbol Min Typ Max Unit IDC -- 700 760 mA Power Gain (f = 900 MHz) PG 16.5 17.5 -- dB Gain Flatness (f = 50 - 1000 MHz) FL -- 1.0 2.0 dB Power Output @ 1 dB Comp. (f = 900 MHz) Pout 1 dB 29 30 -- dBm ITO 40.5 41.5 -- dBm VSWR -- -- -- -- 2.0:1 2.6:1 NF -- -- 7.5 8.5 8.5 9.5 dB Second Harmonic Distortion (Po = 100 mW, f2H = 1000 MHz) dso -- - 55 - 45 dB Second Order Intermodulation Distortion (Po = 2.75 dBm, f1 = 373 MHz, f2 = 450 MHz) IM2 -- - 65 - 60 dB Intermodulation Distortion, 3 Tone (f = 860 MHz, Psync = 200 mW) IM3 -- - 60 -- dB Third Order Intercept (f1 = 879 MHz, f2 = 884 MHz) Input/Output VSWR (f = 50 - 900 MHz) (f = 900 - 1000 MHz) Noise Figure, Broadband (f = 500 MHz) (f = 1000 MHz) REV 2 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MHL8115 6.2-5 PIN CONFIGURATION 1 2 3 4 5 OUTPUT INPUT C1 VCC C1 0.01 F (CHIP) Figure 1. MHL8115 External Connections MHL8115 6.2-6 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA MHL8118 The RF Line UHF Linear Amplifier Designed for linear amplifier applications in 50 Ohm systems requiring wide bandwidth, low noise, and low distortion. Internal DC blocking on RF ports reduces external component count and related circuit area. This hybrid utilizes push-pull circuit design. * Supply Voltage: 28 Vdc * Third Order Intercept: 41.5 dBm Typ * Power Gain: 17.5 dB Typ (@ 900 MHz) * Excellent Phase Linearity and Group Delay Characteristics * 50 Ohm Input/Output Impedances 1 W, 17.5 dB 50 - 1000 MHz LINEAR AMPLIFIERS CASE 448-02, STYLE 1 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Value Unit VCC 32 Vdc RF Input Power Pin +20 dBm Storage Temperature Range Tstg - 40 to +100 C Operating Case Temperature Range TC - 20 to +100 C DC Supply Voltage ELECTRICAL CHARACTERISTICS (TC = +25C; VCC = 28 Vdc; 50 System) Characteristic Supply Current Symbol Min Typ Max Unit IDC -- 400 440 mA Power Gain (f = 900 MHz) PG 16.5 17.5 -- dB Gain Flatness (f = 50 - 1000 MHz) FL -- 1.0 2.0 dB Power Output @ 1 dB Comp. (f = 900 MHz) Pout 1 dB 29 30 -- dBm ITO 40.5 41.5 -- dBm VSWR -- -- -- -- 2.0:1 2.6:1 NF -- -- 7.5 8.5 8.5 9.5 dB Second Harmonic Distortion (Po = 100 mW, f2H = 1000 MHz) dso -- - 55 - 45 dB Second Order Intermodulation Distortion (Po = 2.75 dBm, f1 = 373 MHz, f2 = 450 MHz) IM2 -- - 65 - 60 dB Intermodulation Distortion, 3 Tone (f = 860 MHz, Psync = 200 mW) IM3 -- - 60 -- dB Third Order Intercept (f1 = 879 MHz, f2 = 884 MHz) Input/Output VSWR (f = 50 - 900 MHz) (f = 900 - 1000 MHz) Noise Figure, Broadband (f = 500 MHz) (f = 1000 MHz) REV 3 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MHL8118 6.2-7 PIN CONFIGURATION 1 2 3 4 5 OUTPUT INPUT R1 C1 C2 VCC C1, C2 0.01 F (CHIP) R1 = 90 , 3 WATTS Figure 1. MHL8118 External Connections MHL8118 6.2-8 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA MHL9236 MHL9236M The RF Line Cellular Band Linear Amplifiers Designed for ultra-linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for the most demanding analog or digital modulation systems, such as TDMA, CDMA or QPSK. * Third Order Intercept: 47 dBm Typ * Power Gain: 30.5 dB Typ (@ f = 880 MHz) * Excellent Phase Linearity and Group Delay Characteristics * Ideal for Feedforward Base Station Applications * For Use in TDMA, CDMA, QPSK or Analog Systems 2.5 W, 30.5 dB 800 - 960 MHz LINEAR AMPLIFIERS CASE 301AP-01 STYLE 1, 2 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Value Unit VDD 30 Vdc RF Input Power Pin +10 dBm Storage Temperature Range Tstg - 40 to +100 C Operating Case Temperature Range TC - 20 to +100 C DC Supply Voltage ELECTRICAL CHARACTERISTICS (VDD = 26 Vdc, TC = 25C; 50 System) Characteristic Supply Current Symbol Min Typ Max Unit IDD -- 550 620 mA Power Gain (f = 880 MHz) PG 29.5 30.5 31.5 dB Gain Flatness (f = 800 - 960 MHz) GF -- 0.1 0.3 dB Power Output @ 1 dB Comp. (f = 880 MHz) Pout 1 dB 33.0 34.0 -- dBm Input VSWR (f = 800 - 960 MHz) VSWRin -- 1.2:1 1.5:1 Output VSWR (f = 800 - 960 MHz) VSWRout -- 1.2:1 1.5:1 Third Order Intercept (f1 = 879 MHz, f2 = 884 MHz) ITO 46.0 47.0 -- dBm Noise Figure NF -- 3.5 4.5 dB (f = 800-960 MHz) REV 1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MHL9236 MHL9236M 6.2-9 TYPICAL CHARACTERISTICS 50 PG 20 ITO 45 P1dB, ITO (dBm) IRL 0 ORL -20 TC = 25C VDD = 26 V 40 35 TC = 25C VDD = 26 V -40 400 800 1200 f, FREQUENCY (MHz) P1dB 1600 30 400 2000 Figure 1. Power Gain, Input Return Loss, Output Return Loss versus Frequency 800 f, FREQUENCY (MHz) 1200 1000 Figure 2. P1dB, ITO versus Frequency 33 50 f = 880 MHz VDD = 26 V 32 48 35 ITO 30 575 29 570 -20 0 60 40 20 TEMPERATURE (C) 80 100 44 34 42 565 27 -40 34.5 P1dB IDD 28 46 40 -40 560 120 Figure 3. Power Gain, IDD versus Temperature GROUP DELAY -450 -40 -20 0 20 40 60 TEMPERATURE (C) 2.0 80 100 1.9 120 Figure 5. Phase(1), Group Delay(1) versus Temperature (1)In Production Test Fixture MHL9236 MHL9236M 6.2-10 80 100 33 120 0.50 0.20 0.40 PHASE LINEARITY 0.10 0.30 GF f = 880 MHz VDD = 26 V -445 20 40 60 TEMPERATURE (C) f = 800-960 MHz VDD = 26 V G F , GAIN FLATNESS (dB) -435 GROUP DELAY (nS) PHASE ( ) 2.1 PHASE -440 0 0.30 -425 -430 -20 33.5 Figure 4. ITO, P1dB versus Temperature 2.2 -420 f = 880 MHz VDD = 26 V P1dB (dBm) PG ITO (dBm) 580 31 I DD , (mA) PG , POWER GAIN (dB) 600 0 -40 -20 0 20 40 60 TEMPERATURE (C) 80 100 0.20 120 Figure 6. Gain Flatness, Phase Linearity versus Temperature MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA PHASE LINEARITY( ) POWER GAIN/RETURN LOSS (dB) 40 TYPICAL CHARACTERISTICS 650 600 31.1 550 30.9 500 PG 30.7 24 26 VOLTAGE (VOLTS) ITO (dBm) 31.3 30.5 22 48 46 40 22 2.02 PHASE -434.5 2.01 32 24 26 VOLTAGE (VOLTS) 28 30 0.50 0.11 0.45 0.10 GF 0.40 0.35 0.09 2.00 30 0.08 PHASE LINEARITY 0.30 0.07 f = 800-960 MHz TC = 25C 0.25 f = 880 MHz TC = 25C 28 PHASE LINEARITY( ) GROUP DELAY GROUP DELAY (nS) 2.03 PHASE ( ) -433.5 26 VOLTAGE (VOLTS) 33 Figure 8. ITO, P1dB versus Voltage 2.04 24 f = 880 MHz TC = 25C 42 400 30 -433 -435 22 34 44 Figure 7. Power Gain, IDD versus Voltage -434 35 P1dB 450 28 36 ITO IDD 0.20 22 Figure 9. Phase(1), Group Delay(1) versus Voltage (1)In Production Test Fixture MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 0.06 0.05 24 26 VOLTAGE (VOLTS) 28 30 Figure 10. Phase Linearity, Gain Flatness versus Voltage MHL9236 MHL9236M 6.2-11 G F , GAIN FLATNESS (dB) f = 880 MHz TC = 25C 50 I DD (mA) PG , POWER GAIN (dB) 31.5 700 P1dB (dBm) 31.7 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MHL9318 The RF Line Cellular Band Linear Amplifier 3.0 W, 17.5 dB 860 - 900 MHz LINEAR AMPLIFIER Designed for ultra-linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for the most demanding analog or digital modulation systems, such as TDMA and CDMA. * Third Order Intercept: 49 dBm Typ * Power Gain: 17.5 dB Typ (@ f = 880 MHz) * Excellent Phase Linearity and Group Delay Characteristics * Ideal for Feedforward Base Station Applications * For Use in TDMA and CDMA Multi-Carrier Applications CASE 301AS-01, STYLE 1 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Value Unit VDD 30 Vdc RF Input Power Pin +20 dBm Storage Temperature Range Tstg - 40 to +100 C Operating Case Temperature Range TC - 20 to +100 C DC Supply Voltage ELECTRICAL CHARACTERISTICS (VDD = 28 Vdc, TC = 25C; 50 System) Characteristic Supply Current Symbol Min Typ Max Unit IDD -- 500 560 mA Power Gain (f = 880 MHz) PG 17 17.5 18.5 dB Gain Flatness (f = 860 - 900 MHz) GF -- 0.1 0.2 dB Power Output @ 1 dB Comp. (f = 880 MHz) Pout 1 dB -- 35.5 -- dBm Input VSWR (f = 860 - 900 MHz) VSWRin -- 1.2:1 1.5:1 Output VSWR (f = 860 - 900 MHz) VSWRout -- 1.2:1 1.5:1 Third Order Intercept (f1 = 879 MHz, f2 = 884 MHz) ITO 47 49 -- dBm Noise Figure NF -- 3 4.5 dB (f = 960 MHz) REV 1 MHL9318 6.2-12 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 55 TC = 25C VDD = 28 V 50 20 P1dB, ITO (dBm) PG 0 ORL 40 35 P1dB TC = 25C VDD = 28 V IRL -40 400 800 1200 f, FREQUENCY (MHz) 30 25 500 2000 1600 Figure 1. Power Gain, Input Return Loss, Output Return Loss versus Frequency 515 f = 880 MHz VDD = 28 V 500 16 ITO (dBm) 505 IDD 495 15 -40 -20 0 20 60 40 TEMPERATURE (C) 80 100 38 46 37 44 36 42 40 -40 490 120 0.30 2.1 0.25 PHASE ( ) GROUP DELAY -265 1.9 PHASE -270 1.8 1.7 -275 -20 0 35 P1dB 20 40 60 TEMPERATURE (C) 80 100 34 120 0.60 f = 860-900 MHz VDD = 28 V G F , GAIN FLATNESS (dB) 2.2 2.0 -260 f = 880 MHz VDD = 28 V Figure 4. ITO, P1dB versus Temperature GROUP DELAY (nS) f = 880 MHz VDD = 28 V -255 39 ITO 48 Figure 3. Power Gain, IDD versus Temperature -250 1200 40 50 510 PG 17 1100 52 I DD (mA) 18 800 1000 900 f, FREQUENCY (MHz) Figure 2. P1dB, ITO versus Frequency 20 19 700 600 0.50 0.20 0.40 0.15 0.30 0.10 0.20 PHASE LINEARITY 0.05 0.10 GF -280 -40 -20 0 20 40 60 TEMPERATURE (C) 80 100 P1dB (dBm) -20 PG , POWER GAIN (dB) ITO 45 1.6 120 0 -40 Figure 5. Phase(1), Group Delay(1) versus Temperature (1)In Production Test Fixture MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA -20 0 20 40 60 TEMPERATURE (C) 80 100 0 120 Figure 6. Gain Flatness, Phase Linearity versus Temperature MHL9318 6.2-13 PHASE LINEARITY( ) POWER GAIN/RETURN LOSS (dB) 40 TYPICAL CHARACTERISTICS 18.0 52 37 600 50 36 500 48 PG 400 f = 880 MHz TC = 25C 17.0 22 24 28 26 VOLTAGE (VOLTS) 300 46 42 22 200 30 1.90 PHASE ( ) PHASE 1.89 -261.5 GROUP DELAY -262.0 1.88 f = 880 MHz TC = 25C 26 VOLTAGE (VOLTS) 28 MHL9318 6.2-14 32 24 26 VOLTAGE (VOLTS) 28 30 0.35 0.08 0.30 0.07 0.25 0.06 0.20 0.04 0.15 0.10 GF 0.05 1.86 30 0.05 PHASE LINEARITY 1.87 Figure 9. Phase(1), Group Delay(1) versus Voltage (1)In Production Test Fixture PHASE LINEARITY( ) -261.0 GROUP DELAY (nS) 1.91 24 33 Figure 8. ITO, P1dB versus Voltage -260.5 -263.0 22 f = 880 MHz TC = 25C 44 Figure 7. Power Gain, IDD versus Voltage -262.5 34 0 22 0.03 f = 860-900 MHz TC = 25C 0.02 0.01 24 26 VOLTAGE (VOLTS) 28 30 Figure 10. Phase Linearity, Gain Flatness versus Voltage MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA G F , GAIN FLATNESS (dB) 17.2 35 P1dB P1dB (dBm) IDD 17.4 ITO (dBm) ITO 17.6 I DD (mA) PG , POWER GAIN (dB) 17.8 700 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MHL9838 The RF Line Cellular Band Linear Amplifier 8.0 W, 31 dB 800 - 925 MHz LINEAR AMPLIFIER Designed for ultra-linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for the most demanding analog or digital modulation systems, such as TDMA and CDMA. * Third Order Intercept: 50 dBm Typ * Power Gain: 31 dB Typ (@ f = 880 MHz) * Excellent Phase Linearity and Group Delay Characteristics * Ideal for Feedforward Base Station Applications * For Use in TDMA and CDMA Multi-Carrier Applications CASE 301AP-01, STYLE 1 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Value Unit VDD 30 Vdc RF Input Power Pin +6 dBm Storage Temperature Range Tstg - 40 to +100 C Operating Case Temperature Range TC - 20 to +100 C DC Supply Voltage ELECTRICAL CHARACTERISTICS (VDD = 28 Vdc, TC = 25C; 50 System) Characteristic Supply Current Symbol Min Typ Max Unit IDD -- 770 800 mA Power Gain (f = 880 MHz) PG 30 31 32 dB Gain Flatness (f = 800 - 925 MHz) GF -- 0.1 0.3 dB Power Output @ 1 dB Comp. (f = 880 MHz) Pout 1 dB -- 39 -- dBm Input VSWR (f = 800 - 925 MHz) VSWRin -- 1.2:1 1.5:1 Output VSWR (f = 800 - 925 MHz) VSWRout -- 1.2:1 1.5:1 Third Order Intercept (f1 = 879 MHz, f2 = 884 MHz) ITO 49 50 -- dBm Noise Figure NF -- 3.7 4.5 dB (f = 925 MHz) REV 2 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MHL9838 6.2-15 TYPICAL CHARACTERISTICS 60 P1dB, ITO (dBm) 0 ORL -20 -40 400 800 1200 f, FREQUENCY (MHz) 45 40 P1dB TC = 25C VDD = 28 V IRL 35 1600 30 500 2000 Figure 1. Power Gain, Input Return Loss, Output Return Loss versus Frequency 820 f = 880 MHz VDD = 28 V ITO (dBm) 740 -20 0 40 60 20 TEMPERATURE (C) 80 100 39 40 -40 720 120 P1dB 38 37 44 42 f = 880 MHz VDD = 28 V -20 0 36 20 40 60 TEMPERATURE (C) 80 100 0.30 f = 880 MHz VDD = 28 V GROUP DELAY -440 2.0 1.9 -445 -20 0 20 40 60 TEMPERATURE (C) 80 100 1.8 120 Figure 5. Phase(1), Group Delay(1) versus Temperature (1)In Production Test Fixture MHL9838 6.2-16 f = 800-925 MHz VDD = 28 V G F , GAIN FLATNESS (dB) 2.1 GROUP DELAY (nS) PHASE ( ) PHASE -435 0.80 0.25 2.2 -430 35 120 Figure 4. ITO, P1dB versus Temperature -420 -425 1200 40 ITO 46 Figure 3. Power Gain, IDD versus Temperature -450 -40 1100 41 50 I DD , (mA) PG , POWER GAIN (dB) 760 29 28 -40 900 800 1000 f, FREQUENCY (MHz) 48 780 IDD 30 700 52 800 PG 31 600 Figure 2. P1dB, ITO versus Frequency 33 32 ITO 50 P1dB (dBm) 20 TC = 25C VDD = 28 V 55 PG 0.70 0.60 0.20 0.15 0.50 GF 0.10 0.40 PHASE LINEARITY 0.05 0 -40 0.30 -20 0 20 40 60 TEMPERATURE (C) 80 100 0.20 120 Figure 6. Gain Flatness, Phase Linearity versus Temperature MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA PHASE LINEARITY( ) POWER GAIN/RETURN LOSS (dB) 40 TYPICAL CHARACTERISTICS 31.5 52 800 50 39 30.9 600 48 38 P1dB 46 37 PG f = 880 MHz TC = 25C 24 26 VOLTAGE (VOLTS) 28 42 22 400 30 2.11 -432.5 2.10 GROUP DELAY 2.09 -433.5 2.08 PHASE f = 880 MHz TC = 25C -434.5 22 24 26 VOLTAGE (VOLTS) 28 PHASE LINEARITY( ) -432 -434 36 35 24 26 VOLTAGE (VOLTS) 30 28 Figure 8. ITO, P1dB versus Voltage GROUP DELAY (nS) Figure 7. Power Gain, IDD versus Voltage -433 f = 880 MHz TC = 25C 44 0.45 0.15 0.40 0.14 0.35 0.13 PHASE LINEARITY 0.30 0.12 GF 0.25 0.20 0.10 f = 800-925 MHz TC = 25C 2.07 0.15 2.06 30 0.11 0.10 22 Figure 9. Phase(1), Group Delay(1) versus Voltage (1)In Production Test Fixture MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 0.09 0.08 24 26 VOLTAGE (VOLTS) 28 30 Figure 10. Phase Linearity, Gain Flatness versus Voltage MHL9838 6.2-17 G F , GAIN FLATNESS (dB) 30.5 22 500 P1dB (dBm) 700 ITO (dBm) ITO 31.1 30.7 PHASE ( ) 40 IDD I DD (mA) PG , POWER GAIN (dB) 31.3 900 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MHL19338 The RF Line PCS Band Linear Amplifier Designed for ultra-linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems, such as TDMA and CDMA. * Third Order Intercept: 46 dBm Typ * Power Gain: 30 dB Typ (@ f = 1960 MHz) * Excellent Phase Linearity and Group Delay Characteristics * Ideal for Feedforward Base Station Applications 4.0 W, 30 dB 1900-2000 MHz LINEAR AMPLIFIER CASE 301AP-01 STYLE 1 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Value Unit VDD 30 Vdc RF Input Power Pin +10 dBm Storage Temperature Range Tstg - 40 to +100 C Operating Case Temperature Range TC - 20 to +100 C DC Supply Voltage ELECTRICAL CHARACTERISTICS (VDD = 28 Vdc, TC = 25C; 50 System) Characteristic Supply Current Symbol Min Typ Max Unit IDD -- 500 525 mA Power Gain (f = 1960 MHz) PG 29 30 31 dB Gain Flatness (f = 1900 - 2000 MHz) GF -- 0.1 0.4 dB Power Output @ 1 dB Comp. (f = 1950 MHz) Pout 1 dB 35 36 -- dBm Input VSWR (f = 1900 - 2000 MHz) VSWRin -- 1.2:1 1.5:1 Third Order Intercept (f1 = 1950 MHz, f2 = 1955 MHz) ITO 45 46 -- dBm Noise Figure NF -- 4.2 4.5 dB (f = 2000 MHz) REV 1 MHL19338 6.2-18 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line PCS Band Linear Amplifier MHL19936 Designed for ultra-linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems, such as TDMA and CDMA. * Third Order Intercept: 49.5 dBm Typ * Power Gain: 29 dB Typ (@ f = 1960 MHz) * Excellent Phase Linearity and Group Delay Characteristics * Ideal for Feedforward Base Station Applications 1900-2000 MHz 12 W, 29 dB LINEAR AMPLIFIER CASE 301AY-01, STYLE 1 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Value Unit VDD 30 Vdc DC Supply Voltage RF Input Power Pin +10 dBm Storage Temperature Range Tstg - 40 to +100 C Operating Case Temperature Range TC - 20 to +100 C ELECTRICAL CHARACTERISTICS (VDD = 26 Vdc, TC = 25C; 50 System) Characteristic Supply Current Symbol Min Typ Max Unit IDD -- 1.4 1.45 A Power Gain (f = 1960 MHz) PG 28 29 30 dB Gain Flatness (f = 1900 - 2000 MHz) GF -- 0.2 0.4 dB Power Output @ 1 dB Comp. (f = 1950 MHz) Pout 1 dB 40 41 -- dBm Input VSWR (f = 1900 - 2000 MHz) VSWRin -- 1.2:1 1.5:1 Third Order Intercept (f1 = 1950 MHz, f2 = 1955 MHz) ITO 49 49.5 -- dBm Noise Figure (f = 2000 MHz) NF -- 4.2 4.5 dB REV 0 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MHL19936 6.2-19 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MHL21336 The RF Line 3G Band Linear Amplifier Designed for ultra-linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital CDMA modulation systems. * Third Order Intercept: 45 dBm Typ * Power Gain: 31 dB Typ (@ f = 2140 MHz) * Excellent Phase Linearity and Group Delay Characteristics * Ideal for Feedforward Base Station Applications 3.0 W, 31 dB 2110-2170 MHz LINEAR AMPLIFIER CASE 301AP-01 STYLE 1 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Symbol Rating DC Supply Voltage Value Unit VDD 30 Vdc RF Input Power Pin +5 dBm Storage Temperature Range Tstg - 40 to +100 C Operating Case Temperature Range TC - 20 to +100 C ELECTRICAL CHARACTERISTICS (VDD = 26 Vdc, TC = 25C; 50 System) Characteristic Supply Current Symbol Min Typ Max Unit IDD -- 500 525 mA PG 30 31 32 dB Power Gain (f = 2140 MHz) Gain Flatness (f = 2110 - 2170 MHz) GF -- 0.15 0.4 dB Power Output @ 1 dB Comp. (f = 2140 MHz) Pout 1 dB 34 35 -- dBm Input VSWR (f = 2110 - 2170 MHz) VSWRin -- 1.2:1 1.5:1 Third Order Intercept (f1 = 2137 MHz, f2 = 2142 MHz) ITO 44 45 -- dBm Noise Figure NF -- 4.5 5 dB (f = 2170 MHz) REV 1 MHL21336 6.2-20 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA MHW1810-1 MHW1810-2 The RF MOSFET Line RF Power Field Effect Amplifiers N-Channel Enhancement-Mode Lateral MOSFETs * Specified 26 Volts, 1805-1880 MHz, Class AB Characteristics Output Power = 16 Watts CW Typ Power Gain = 26 dB Typ @ 10 Watts (MHW1810-1) Power Gain = 34 dB Typ @ 10 Watts (MHW1810-2) Efficiency = 34% Min @ 10 Watts * 50 Input/Output System * Designed for GSM Linearity Requirements 10 W, 1805 - 1880 MHz RF POWER AMPLIFIER CASE 301AW-02, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit VS 28 Vdc Vbias 28 Vdc Pin 21 16 dBm Pout 20 W Operating Case Temperature Range TC - 10 to +90 C Storage Temperature Range Tstg - 30 to +100 C DC Supply Voltage DC Bias Voltage RF Input Power MHW1810-1 MHW1810-2 RF Output Power ELECTRICAL CHARACTERISTICS (TC = + 25C, VS = 26 Vdc; Vbias = 5 Vdc; 50 system, unless otherwise noted) Characteristic Symbol Min Typ Max Unit Frequency Range BW 1805 -- 1880 MHz Quiescent Current (Pin = 0 mW) IDQ 100 -- 150 mA Bias Current Ibias -- -- 2 mA Output Power at 1 dB Compression P1dB 10 14 -- W GP 24 32 26 34 28 36 dB 34 -- -- % VSWRin -- -- 1.8:1 -- Harmonics at 2fo (Pout = 10 W) H2 -- -- - 35 dBc Harmonics at 3fo (Pout = 10 W) H3 -- -- - 45 dBc IMDr -- -- - 50 dBc Power Gain (Pout = 10 W) Power Gain (Pout = 10 W) MHW1810-1 MHW1810-2 Efficiency (Pout = 10 W) Input VSWR (Pout = 10 W) Reverse IMD; Pout = 10 W; Preverse = -40 dBc (F1 = F0 200 kHz @ -40 dBc) Load Mismatch Stress Load VSWR = 5:1, All Phase Angles No Degradation in Output Power Stability (Pout = 10 mW to 10 W, VS 26 Vdc) Load VSWR = 5:1, All Phase Angles -- All Spurious Outputs More Than 60 dB Below Desired Signal NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MHW1810-1 MHW1810-2 6.2-21 EXTREME CASE ELECTRICAL CHARACTERISTICS (TC = -10 to + 85C, VS = 23.5 to 26 Vdc, Vbias = 3 to 26 Vdc, 50 system, unless otherwise noted) Symbol Min Typ Max Unit Frequency Range BW 1805 -- 1880 MHz Quiescent Current (Pin = 0 mW) IDQ 100 -- 160 mA Bias Current Ibias -- -- 2 mA Output Power at 1 dB Compression P1dB 8 -- -- W GP -- 5 6.5 dB 32 -- -- % VSWRin -- -- 2:1 -- Harmonics at 2fo H2 -- -- - 35 dBc Harmonics at 3fo H3 -- -- - 45 dBc IMDr -- -- - 50 dBc Characteristic Power Gain Variation for a Given Part (Pout = 10 W) Efficiency (Pout = 10 W) Input VSWR Reverse IMD; Pout = 10 W; Preverse = -40 dBc (F1 = F0 200 kHz @ -40 dBc) Load Mismatch Stress Load VSWR = 5:1, All Phase Angles No Degradation in Output Power Stability (Pout = 10 mW to 10 W, VS 26 Vdc) Load VSWR = 5:1, All Phase Angles -- All Spurious Outputs More Than 60 dB Below Desired Signal BIAS REGULATION Vbias VS RF IN RF OUT Figure 1. Internal Diagram MHW1810-1 MHW1810-2 6.2-22 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA TYPICAL CHARACTERISTICS MHW1810-1 44 60 50 38 , EFFICIENCY (%) Pout , OUTPUT POWER (dBm) 42 40 36 34 Pout @ 1805 MHz 32 30 40 30 @ 1880 MHz 20 28 Pout @ 1880 MHz 26 10 24 0 22 0 15 10 Pin, INPUT POWER (dBm) 5 20 0 25 32 30 28 29 Pout = 10 W 20 16 12 8 18 20 27 TC = 25C 26 25 24 TC = 85C 22 1700 1800 2000 1900 2100 f, FREQUENCY (MHz) 2200 21 1800 2300 1810 1820 Figure 4. Power Gain versus Frequency G p , POWER GAIN VARIATION (dB) TC = -10C 39 38.5 TC = 25C 38 37.5 37 TC = 85C 36.5 36 35.5 Pout = 10 W 1810 1820 1830 1840 1850 1860 1870 1880 1830 1840 1850 1860 f, FREQUENCY (MHz) 1870 1880 1890 Figure 5. Gain versus Frequency 40 39.5 , EFFICIENCY (%) 16 Pout = 10 W 23 4 35 1800 8 6 12 10 14 Pin, INPUT POWER (dBm) TC = -10C 28 24 0 1600 4 Figure 3. Efficiency versus Input Power G p , POWER GAIN (dB) G p , POWER GAIN (dB) Figure 2. Output Power versus Input Power 2 1890 1.9 1.7 Pout = 0.5 W to 10 W 1.5 1.3 1.1 0.9 TC = 85C 0.7 0.5 0.3 0.1 -0.1 -0.3 -0.5 1800 1810 f, FREQUENCY (MHz) Figure 6. Efficiency versus Frequency MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA TC = 25C TC = -10C 1820 1830 1840 1850 1860 1870 1880 1890 f, FREQUENCY (MHz) Figure 7. Power Gain Variation versus Frequency MHW1810-1 MHW1810-2 6.2-23 TYPICAL CHARACTERISTICS MHW1810-1 17 1.0 16 TC = -10C R p , GAIN RIPPLE (dB) P1dB (W) 15 0.8 TC = 25C 14 TC = 85C 13 Rp 0.4 0.2 12 11 1800 0.6 1810 1820 1830 1840 1850 1860 f, FREQUENCY (MHz) 1870 1880 1890 0 -20 -10 VSWR in , INPUT VSWR Figure 8. P1dB versus Frequency 1.26 1.24 1.22 1.20 1.18 1.16 1.14 1.12 1.10 1.08 1.06 1.04 1.02 1.00 1750 0 10 20 30 40 50 TEMPERATURE (C) 60 70 80 90 Figure 9. Gain Ripple versus Temperature Pout = 10 W 1800 1850 1900 f, FREQUENCY (MHz) 1950 2000 Figure 10. Input VSWR MHW1810-1 MHW1810-2 6.2-24 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA TYPICAL CHARACTERISTICS MHW1810-2 44 60 50 38 , EFFICIENCY (%) Pout , OUTPUT POWER (dBm) 42 40 36 34 32 Pout @ 1805 MHz 30 40 30 @ 1880 MHz 20 28 26 Pout @ 1880 MHz 10 24 22 -10 5 0 Pin, INPUT POWER (dBm) -5 10 0 -10 -8 15 Figure 11. Output Power versus Input Power -6 -4 6 2 -2 0 4 Pin, INPUT POWER (dBm) 8 10 12 14 Figure 12. Efficiency versus Input Power 36 39 32 Pout = 10 W 37 G p , POWER GAIN (dB) G p , POWER GAIN (dB) 28 Pout = 10 W 24 20 16 12 TC = -10C 35 TC = 25C 33 31 TC = 85C 29 8 27 4 0 1600 1700 1800 2000 1900 2100 f, FREQUENCY (MHz) 2200 25 1800 2300 Figure 13. Power Gain versus Frequency 1870 1880 1890 2.0 G p , POWER GAIN VARIATION (dB) 42 TC = -10C 41 , EFFICIENCY (%) 1830 1840 1850 1860 f, FREQUENCY (MHz) Figure 14. Gain versus Frequency 43 40 TC = 25C 39 TC = 85C 38 37 Pout = 10 W 36 35 1800 1810 1820 1810 1820 1830 1840 1850 1860 1870 1880 1.8 Pout = 0.5 W to 10 W 1.6 1.4 1.2 TC = 85C 1.0 0.8 TC = 25C 0.6 0.4 TC = -10C 0.2 1890 0 1800 1810 f, FREQUENCY (MHz) Figure 15. Efficiency versus Frequency MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 1820 1830 1840 1850 1860 1870 1880 1890 f, FREQUENCY (MHz) Figure 16. Power Gain Variation versus Frequency MHW1810-1 MHW1810-2 6.2-25 TYPICAL CHARACTERISTICS MHW1810-2 16 1.0 TC = -10C 15.5 0.9 0.8 P1dB (W) R p , GAIN RIPPLE (dB) 15 14.5 TC = 25C 14 13.5 TC = 85C 13 12.5 0.7 0.5 0.4 0.3 12 0.2 11.5 0.1 11 1800 1810 1820 1830 1840 1850 1860 f, FREQUENCY (MHz) 1870 Figure 17. P1dB versus Frequency 1880 1890 Rp 0.6 0 -20 -10 0 10 20 30 40 50 TEMPERATURE (C) 60 70 80 90 Figure 18. Gain Ripple versus Temperature 1.5 VSWR in , INPUT VSWR 1.4 1.3 Pout = 10 W 1.2 1.1 1.0 1650 1700 1750 1850 1800 f, FREQUENCY (MHz) 1900 1950 Figure 19. Input VSWR MHW1810-1 MHW1810-2 6.2-26 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MHW1910-1 RF Power Field Effect Amplifier N-Channel Enhancement-Mode Lateral MOSFET * Specified 26 Volts, 1930-1990 MHz, Class AB Characteristics Output Power = 14 Watts CW Typ Power Gain = 26 dB Typ @ 10 Watts Efficiency = 34% Min @ 10 Watts * 50 Input/Output System * Designed for GSM Linearity Requirements 10 W, 1930 - 1990 MHz RF POWER AMPLIFIER CASE 301AW-02, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit VS 28 Vdc DC Bias Voltage Vbias 28 Vdc RF Input Power Pin 21 dBm Pout 20 W Operating Case Temperature Range TC - 10 to +90 C Storage Temperature Range Tstg - 30 to +100 C DC Supply Voltage RF Output Power ELECTRICAL CHARACTERISTICS (TC = +25C, VS = 26 Vdc; Vbias = 5 Vdc; 50 system, unless otherwise noted) Symbol Min Typ Max Unit Frequency Range BW 1930 -- 1990 MHz Quiescent Current (Pin = 0 mW) IDQ 100 -- 150 mA Bias Current Ibias -- -- 2 mA Output Power at 1 dB Compression P1dB 10 14 -- W GP 24 26 28 dB 34 -- -- % Characteristic Power Gain (Pout = 10 W) Efficiency (Pout = 10 W) Input VSWR VSWRin -- -- 1.8:1 -- Harmonics at 2fo H2 -- -- - 35 dBc Harmonics at 3fo H3 -- -- - 45 dBc IMDr -- -- - 50 dBc Reverse IMD; Pout = 10 W; Preverse = -40 dBc (F1 = F0 200 kHz @ -40 dBc) Load Mismatch Stress Load VSWR = 5:1, All Phase Angles No Degradation in Output Power Stability (Pout = 10 mW to 10 W, VS 26 Vdc) Load VSWR = 5:1, All Phase Angles -- All Spurious Outputs More Than 60 dB Below Desired Signal NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MHW1910-1 6.2-27 EXTREME CASE ELECTRICAL CHARACTERISTICS (TC = -10 to + 85C, VS = 23.5 to 26 Vdc, Vbias = 3 to 26 Vdc, 50 system, unless otherwise noted) Symbol Min Typ Max Unit Frequency Range BW 1930 -- 1990 MHz Quiescent Current (Pin = 0 mW) IDQ 100 -- 160 mA Bias Current Ibias -- -- 2 mA Output Power at 1 dB Compression P1dB 8 -- -- W GP -- 5 6.5 dB 32 -- -- % VSWRin -- -- 2:1 -- Harmonics at 2fo H2 -- -- - 35 dBc Harmonics at 3fo H3 -- -- - 45 dBc IMDr -- -- - 46 dBc Characteristic Power Gain Variation for a Given Part (Pout = 10 W) Efficiency (Pout = 10 W) Input VSWR Reverse IMD; Pout = 10 W; Preverse = -40 dBc (F1 = F0 200 kHz @ -40 dBc) Load Mismatch Stress Load VSWR = 5:1, All Phase Angles No Degradation in Output Power Stability (Pout = 10 mW to 10 W, VS 26 Vdc) Load VSWR = 5:1, All Phase Angles -- All Spurious Outputs More Than 60 dB Below Desired Signal BIAS REGULATION Vbias VS RF IN RF OUT Figure 1. Internal Diagram MHW1910-1 6.2-28 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA TYPICAL CHARACTERISTICS 44 60 50 38 , EFFICIENCY (%) Pout , OUTPUT POWER (dBm) 42 40 36 34 Pout @ 1930 MHz 32 30 40 30 @ 1990 MHz 20 28 Pout @ 1990 MHz 26 10 24 0 22 2 0 6 4 8 10 12 14 16 Pin, INPUT POWER (dBm) 18 20 22 0 24 Figure 2. Output Power versus Input Power 4 6 20 22 24 Pout = 10 W 29 Pout = 10 W TC = -10C G p , POWER GAIN (dB) 28 20 16 12 8 27 TC = 25C 26 25 24 TC = 85C 23 4 22 0 1700 1800 1900 2000 f, FREQUENCY (MHz) 2100 21 1920 2200 Figure 4. Power Gain versus Frequency 42 1.3 G p , POWER GAIN VARIATION (dB) 1.5 TC = -10C 40 39 TC = 25C 38 TC = 85C 37 Pout = 10 W 36 1930 1940 1950 1960 1970 1980 1990 1930 1940 1950 1960 1970 f, FREQUENCY (MHz) 1980 1990 2000 Figure 5. Gain versus Frequency 43 41 , EFFICIENCY (%) 18 30 24 35 1920 10 12 14 16 8 Pin, INPUT POWER (dBm) Figure 3. Efficiency versus Input Power 28 G p , POWER GAIN (dB) 2 Pout = 0.5 W to 10 W 1.1 0.9 TC = 85C 0.7 0.5 TC = 25C 0.3 0.1 TC = -10C -0.1 -0.3 2000 -0.5 1920 f, FREQUENCY (MHz) Figure 6. Efficiency versus Frequency MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 1930 1940 1950 1960 1970 1980 1990 2000 f, FREQUENCY (MHz) Figure 7. Power Gain Variation versus Frequency MHW1910-1 6.2-29 TYPICAL CHARACTERISTICS 15.5 1.0 TC = -10C 15 14.5 0.8 R p , GAIN RIPPLE (dB) TC = 25C P1dB (W) 14 13.5 13 TC = 85C 12.5 12 0.6 Rp 0.4 0.2 11.5 11 1920 1930 1940 1950 1960 1970 f, FREQUENCY (MHz) 1980 1990 2000 0 -20 -10 Figure 8. P1dB versus Frequency 0 10 20 30 40 50 TEMPERATURE (C) 60 70 80 90 Figure 9. Gain Ripple versus Temperature 1.22 1.20 VSWR in , INPUT VSWR 1.18 1.16 1.14 1.12 1.10 Pout = 10 W 1.08 1.06 1.04 1.02 1.00 1750 1800 1850 1900 f, FREQUENCY (MHz) 1950 2000 Figure 10. Input VSWR MHW1910-1 6.2-30 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Chapter Seven RF CATV Distribution Amplifiers Section One . . . . . . . . . . . 7.1-0 RF CATV Distribution Amplifiers - Selector Guide Section Two . . . . . . . . . . . 7.2-0 RF CATV Distribution Amplifiers - Data Sheets MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 7.0-1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 7.0-2 Section One Selector Guide Motorola RF CATV Distribution Amplifiers Motorola Hybrids are manufactured using the latest CATV generation technology which has set new standards for CATV system performance and reliability. These hybrids have been optimized to provide premium performance in all CATV systems up to 152 channels. Additions to our CATV product family include 40-870 MHz high output gallium arsenide (GaAs) power doublers as well as low distortion, low power consumption reverse amplifiers. Table of Contents RF CATV Distribution Amplifiers . . . . . . . . . . . . . . . . . . Forward Amplifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Amplifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . Packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Page 7.1-1 7.1-2 7.1-4 7.1-6 SELECTOR GUIDE 7.1-1 Motorola RF CATV Distribution Amplifiers Motorola Hybrids are manufactured using the latest generation technology which has set new standards for CATV system performance and reliability. These hybrids have been optimized to provide premium performance in all CATV systems up to 152 channels. Forward Amplifiers 40-1000 MHz Hybrids, VCC = 24 Vdc, Class A Maximum Distortion Specifications Hybrid Gain (Nom.) @ 50 MHz MH Device MHW9182B MHW9242A Channel Loading C Capacity i dB 18.5 24 152 152 Output Level 2nd Order Test Composite Triple p Beat Cross Modulation Noise Figure @ 1000 MHz dB dB dB dBmV dB 152 CH 152 CH Max Package/ Style + 38 + 38 - 63(40) - 61(40) - 61 - 58 - 61 - 59 7.5 8.0 714Y/1 714Y/1 Composite Triple p Beat Cross Modulation Noise Figure @ 870 MHz dB dB dB 40-870 MHz High Output Gallium Arsenide Power Doubler Maximum Distortion Specifications Hybrid Gain (Nom.) @ 870 MHz MH Device dB MHW9187(46b) 20 Channel Loading C Capacity i 132 Output Level 2nd Order Test dBmV dB 132 CH 132 CH Max Package/ Style + 48 - 62(34) - 58 - 55 4.5 1302/1 DIN45004B @ f=860 MHz dBV Min Noise Figure @ 860 MHz dB Max Package/ Style 40 - 860 MHz Hybrids Device CA901 Gain dB Typ @ 50 MHz Frequency VCC MHz Volts 2nd Order IMD @ Vout = 50 dBmV/ch Max 17 40 - 860 24 - 60 120 8.0 714P/2 40 - 860 40 - 860 24 24 - 63 - 67 123 123 9.5 9.5 714P/2 714P/2 Power Doubling Hybrids CA922 CA922A 17 17 40 - 860 MHz Hybrids, VCC = 24 Vdc, Class A Maximum Distortion Specifications Hybrid Gain (Nom.) @ 50 MHz Device MHW8182B MHW8222B MHW8242A MHW8272A MHW8292 Channel Loading Capacity p y dB 18.5 21.9 24 27.2 29 128 128 128 128 128 Output Level 2nd Order Test Composite Triple p Beat dB Cross Modulation FM = 55 MHz dB Noise Figure @ 860 MHz dB dBmV dB 128 CH 128 CH Max Package/ Style +38 +38 +38 +38 +38 -64(40) -60(40) -62(40) -64(40) -56(40) - 66 - 64 - 64 - 64 - 60 - 65 - 63 - 62 - 62 - 60 7.5 7.0 7.5 7.0 7.0 714Y/1 1302/1 714Y/1 714Y/1 714Y/1 (34)Composite 2nd Order; V out = + 48 dBmV/ch (40)Composite 2nd Order; V out = + 38 dBmV/ch (46)To be introduced: a) 1Q01; b) 2Q01; c) 3Q01 New Product SELECTOR GUIDE 7.1-2 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CATV Distribution: Forward Amplifiers (continued) 40 - 860 MHz Hybrids, VCC = 24 Vdc, Class A (continued) Maximum Distortion Specifications Hybrid Gain (Nom.) @ 50 MHz Device Channel Loading p y Capacity dB Output Level 2nd Order Test Composite Triple p Beat dB Cross Modulation FM = 55 MHz dB Noise Figure @ 860 MHz dB dBmV dB 128 CH 128 CH Max Package// Style +40 +40 +40 +40 +40 +40 +40 -62(39) -62(39) -62(39) -62(39) -60(39) -60(39) -60(39) - 63 - 63 - 64 - 64 - 63 - 63 - 63 - 64 - 64 - 64 - 64 - 64 - 64 - 64 8.5* 8.5* 8.0 8.0 8.5* 8.0 8.0 714Y/1 714Y/2 714Y/1 714Y/2 714Y/1 714Y/1 714Y/2 Power Doubling Hybrids MHW8185L(21) MHW8185LR(28) MHW8185 MHW8185R(14) MHW8205L(22) MHW8205 MHW8205R(24) 18.5 18.5 18.8 18.8 19.5 19.8 19.8 128 128 128 128 128 128 128 *@ 870 MHz 40 - 750 MHz Hybrids, VCC = 24 Vdc, Class A Hybrid Gain (Nom.) @ 50 MHz Device MHW7182B MHW7222B MHW7272A MHW7292 Maximum Distortion Specifications Channel Loading Capacity 2nd Order Test Composite Triple Beat dB Cross Modulation FM = 55 MHz dB Noise Figure @ 750 MHz dB dBmV dB 110 CH 110 CH Max Package/ Style 110 110 110 110 +40 +40 +40 +40 -63(39) -60(39) -64(39) -60(39) - 66 - 61 - 64 - 60 - 64 - 60 - 60 - 60 6.5 6.5 6.5 6.5 714Y/1 1302/1 714Y/1 714Y/1 110 110 110 110 +44 +44 +44 +44 -64(36) -64(36) -63(36) -63(36) -61 -62 -61 -61 -63 -63 -62 -62 7.5 7.5 7.5 7.5 714Y/1 714Y/1 714Y/1 714Y/1 dB 18.5 21.9 27.2 29 Output Level Power Doubling Hybrids MHW7185CL (23) MHW7185C MHW7205CL (27) MHW7205C 18.5 18.8 19.5 19.8 (14)Mirror Amplifier Version of MHW8185 (21)Low DC Current Version of MHW8185; Typical I CC @ Vdc = 24 V is 365 mA. (22)Low DC Current Version of MHW8205; Typical I CC @ Vdc = 24 V is 365 mA. (23)Low I CC Version of MHW7185C; Typical ICC @ Vdc = 24 V is 365 mA. (24)Mirror Amplifier Version of MHW8205 (27)Low I CC Version of MHW7205C; Typical ICC @ Vdc = 24 V is 365 mA. (28)Mirror Amplifier Version of MHW8185L (36)Composite 2nd order; V out = + 44 dBmV/ch (39)Composite 2nd order; V out = +40 dBmV/ch (46)To be introduced: a) 1Q01; b) 2Q01; c) 3Q01 New Product MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA SELECTOR GUIDE 7.1-3 CATV Distribution: Forward Amplifiers (continued) 40 - 550 MHz Hybrids, VCC = 24 Vdc, Class A Maximum Distortion Specifications Hybrid Gain (Nom.) @ 50 MHz Channel Loading Capacity MHW6342T 34.5 2nd Order Test Composite Triple Beat Cross Modulation Noise Figure @ 550 MHz dB dB dB dB Device Output Level 77 dBmV dB 77 CH 77 CH Max Package/ Style +44 -64(35) -57 -57 6.5 1302/1 Reverse Amplifiers 5 - 200 MHz Hybrids, VCC = 24 Vdc, Class A Maximum Distortion Specifications Hybrid G i Gain (Nom ) (Nom.) Device MHW1224 MHW1244 Channel L di Loading Capacity dB 22 24 22 22 Composite Triple p Beat Cross Modulation dB dB Noise Figure @ 175 MHz Output O t t Level 2nd Order O d Test(30) dBmV dB 22 CH 26 CH 22 CH 26 CH dB Max Package// Style +50 +50 -72 -72 -69 -68 - 68.5(19) - 67.5(19) - 62 - 61 -62(19) -61(19) 5.5 5.0 714Y/1 714Y/1 Low Current Amplifiers -- 5 - 200 MHz Hybrids, VCC = 24 Vdc, Class A Maximum Distortion Specifications Hybrid Gain ((Nom.)) Device MHW1223LA MHW1253LA MHW1303LA Channel Loading Capacity p y dB 22.7 25.5 30.8 6,10 6,10 6,10 2nd Order Test Composite Triple p Beat Cross Modulation dB dB dB Output Level DC Current C rrent Noise Figure @ 200 MHz dBmV 6 CH 10 CH 6 CH 10 CH 6 CH 10 CH mA Typ. dB Max Pkg/ Style 50 50 50 - 68 - 68 - 68 - 65 - 66 - 65 -75 -75 -74 - 66 - 66 - 64 - 65 - 65 - 64 - 60 - 61 - 58 95 95 95 7.0 6.5 5.7 1302/1 1302/1 1302/1 DC C t Current Noise Figure @ 150 MH MHz Low Current Amplifiers -- 5 - 150 MHz Hybrids, VCC = 24 Vdc, Class A Maximum Distortion Specifications Hybrid Gain (Nom.) Device MHW1353LA Channel Loading Capacity dB 35.2 6,10 2nd Order Test Output Level Composite Triple p Beat dB Cross Modulation dB dB dBmV 6 CH 10 CH 6 CH 10 CH 6 CH 10 CH mA Typ. dB Max Pkg/ Style 50 - 68 - 65 -73 - 62 - 63 - 57 95 5.4 1302/1 (19)Typical (30)Channels 2 and A @ 7 (35)Channels 2 and M30 @ M39 (36)Composite 2nd order; V out = + 44 dBmV/ch New Product SELECTOR GUIDE 7.1-4 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CATV Distribution: Reverse Amplifiers (continued) Low Current Amplifiers -- 5 - 65 MHz Hybrids, VCC = 24 Vdc, Class A Maximum Distortion Specifications Hybrid Gain ((Nom.)) Channel Loading Capacity p y dB Device MHW1224LA MHW1254LA MHW1304LA MHW1354LA 22.7 25.5 30.8 35 2nd Order Test Output Level Composite Triple p Beat dB DC C rrent Current Noise Figure @ 65 MHz Cross Modulation dB dB dBmV 6 CH 10 CH 6 CH 10 CH 6 CH 10 CH mA Typ. dB Max Pkg/ Style 50 50 50 50 - 68 - 68 - 68 - 68 - 65 - 66 - 65 - 65 -75 -75 -74 -73 - 66 - 66 -64 - 62 - 65 - 65 - 64 - 63 - 60 - 61 - 58 - 57 95 95 95 95 7.0 6.5 5.7 5.2 1302/1 1302/1 1302/1 1302/1 6,10 6,10 6,10 6,10 Low Current Amplifiers -- 5-50 MHz Hybrids, VCC = 24 Vdc, Class A Maximum Distortion Specifications Hybrid Gain (Nom ) (Nom.) Channel Loading Capacity Composite Triple p Beat Cross Modulation dB dB Output Level 2nd Order Test(30) Max dBmV dB 4 CH 4 CH Max Package/ Style 135 135 +50 +50 -70 -70 -70 -66 - 62 - 57 4.5 4.5 714Y/1 714Y/1 IDC dB mA A Device dB MHW1254L MHW1304L 25 30 4 4 Noise Figure @ 50 MHz (30)Channels 2 and A @ 7 New Product MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA SELECTOR GUIDE 7.1-5 RF CATV Distribution Amplifiers Packages CASE 714P STYLE 2 CASE 714Y STYLE 1, 2 CASE 1302 STYLE 1 SCALE 1:2 SELECTOR GUIDE 7.1-6 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Section Two Motorola RF CATV Distribution Amplifiers - Data Sheets Device Number Page Number Device Number Page Number CA901 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-3 MHW7205C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-32 CA922 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-5 MHW7205CL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-33 CA922A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-5 MHW7222B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-34 MHW1223LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-7 MHW7272A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-36 MHW1224 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-9 MHW7292 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-37 MHW1224LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-11 MHW8182B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-38 MHW1244 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-9 MHW8185 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-39 MHW1253LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-13 MHW8185L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-40 MHW1254L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-15 MHW8185LR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-41 MHW1254LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-16 MHW8185R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-42 MHW1303LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-18 MHW8205 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-43 MHW1304L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-20 MHW8205L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-44 MHW1304LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-21 MHW8205R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-45 MHW1353LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-23 MHW8222B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-46 MHW1354LA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-25 MHW8242A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-48 MHW6342T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-27 MHW8272A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-49 MHW7182B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-29 MHW8292 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-50 MHW7185C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-30 MHW9182B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-51 MHW7185CL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-31 MHW9242A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2-52 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA DATA SHEETS 7.2-1 DATA SHEETS 7.2-2 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line VHF/UHF CATV Amplifiers CA901 Designed for broadband applications requiring low-distortion amplification. Specifically intended for CATV/MATV market requirements. These amplifiers feature ion-implanted arsenic emitter transistors and an all gold metal system. * Specified Characteristics at VCC = 24 V, TC = 25C: Frequency Range -- 40 to 860 MHz Power Gain -- 17 dB Typ @ f = 40 MHz Noise Figure -- 6.5 dB Typ @ f = 500 MHz 120 dBmV DIN45004B @ 860 MHz 17 dB 40 - 860 MHz VHF/UHF CATV/MATV AMPLIFIERS * All Gold Metallization for Improved Reliability * Superior Gain, Return Loss and DC Current Stability with Temperature CASE 714P-03, STYLE 2 (CA) MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating RF Voltage Input (Single Tone) Supply Voltage Symbol Value Unit Vin +14 dBm VCC 26 Vdc Operating Case Temperature Range TC - 20 to +100 C Storage Temperature Range Tstg - 40 to +100 C ELECTRICAL CHARACTERISTICS (TC = 25C, VCC = 24 V, 75 system unless otherwise noted) Characteristic Symbol Min Typ Max Unit Frequency Range BW 40 -- 860 MHz Power Gain (f = 40 MHz) PG 16.5 17 17.5 dB Slope (40 - 860 MHz) S 0.2 0.8 1.5 dB Gain Flatness -- -- -- 0.6 dB IRL/ORL 20 15 10/15 -- 17 12/18 -- -- -- dB IMD2 -- -- - 60 dB DIN45004B (See Figure 1) f = 40 - 400 MHz f = 400 - 860 MHz DIN 121 120 -- -- -- -- dBmV Noise Figure NF -- -- 6.5 7.0 7.5 8.0 dB IDC -- 235 255 mA Input/Output Return Loss f = 40 - 100 MHz f = 100 - 800 MHz f = 800 - 860 MHz Second Order Intermodulation Distortion (Vout = + 50 dBmV per ch.) Supply Current f = 500 MHz f = 860 MHz REV 7 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CA901 7.2-3 DIN PIN CONFIGURATION -6 dB 1 -60 dB 2 3 4 5 6 7 8 9 OUTPUT VCC INPUT R 6 MHz 12 MHz Figure 1. DIN45004B Test CA901 7.2-4 6 MHz C2 C1 C1, 2 0.01 F (chip) R = 110 , 2 Watts Figure 2. External Connections MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line CA922 VHF/UHF CATV Amplifiers CA922A Designed for broadband applications requiring low-distortion and high output capability. Specifically intended for CATV/MATV market requirements. These amplifiers feature ion-implanted arsenic emitter transistors and an all gold metal system. * Specified Characteristics at VCC = 24 V, TC = 25C Frequency Range -- 40 to 860 MHz Power Gain -- 17 dB Typ @ f = 40 MHz Noise Figure -- 7.0 dB Typ @ f = 500 Mhz 123 dBV DIN45004B @ 860 MHz 17 dB 40 - 860 MHz VHF/UHF CATV/MATV AMPLIFIERS * All Gold Metalization for Improved Reliability * Superior Gain, Return Loss and DC Current Stability with Temperature * Improved 2nd Order IMD Available (CA922A) CASE 714P-03, STYLE 2 MAXIMUM RATINGS Rating Symbol Supply Voltage Value Unit VCC 26 V RF Input Power Per Tone Pin +16 dBm Storage Temperature Tstg - 40 to +100 C Operating Case Temperature Range TC - 20 to +100 C ELECTRICAL CHARACTERISTICS (TC = 25C, VCC = 24 V, 75 Ohm System) Characteristic Symbol Min Typ Max Unit Idc -- 400 440 mA Power Gain (f = 40 MHz) PG 16.5 17 17.5 dB Bandwidth BW 40 -- 860 MHz Slope (40 - 860 MHz) S 0.2 0.8 1.5 dB Gain Flatness FL -- -- 1.0 dB IRL/ORL 20 15 10/13 -- 17 12/15 -- -- -- dB IMD2 -- -- -- -- - 63 - 67 dB dB DIN45004B (See Figure 1) f = 40 - 400 MHz f = 400 - 860 MHz DIN 124 123 -- -- -- -- dBV Noise Figure NF -- -- 7.0 8.0 8.5 9.5 dB Supply Current Input/Output Return Loss f = 40 - 100 MHz f = 100 - 800 MHz f = 800 - 860 MHz Second Order Intermodulation Distortion (Vo = +50 dBmV/ch.) f = 500 MHz f = 860 MHz CA922 CA922A REV 6 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CA922 CA922A 7.2-5 Pin Configuration DIN - 6 dB 1 2 3 4 5 6 7 8 9 Input Output VCC - 60 dB R C2 6 MHz 12 MHz 6 MHz Figure 1. DIN45004B Test CA922 CA922A 7.2-6 C1 C1, 2 0.01 F (chip) R = 65 Ohms, 2 Watts Figure 2. External Connections MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Low Distortion Wideband Reverse Amplifier Modules MHW1223LA Designed specifically for broadband applications requiring low multi-channel distortion characteristics. Specified for use as return amplifiers for 2-way cable TV systems. * Designed for Low Power Consumption * Specified for 6 and 10 Channel Performance * Guaranteed Broadband Power Gain * Guaranteed Broadband Noise Figure * All Gold Metallization * Designed to Ensure Good Gain Stability versus Temperature 5-200 MHz, 22.7 dB CATV LOW CURRENT AMPLIFIER CASE 1302-01, STYLE 1 MAXIMUM RATINGS Parameter Symbol Value Unit VCC +28 Vdc RF Input Voltage (Single Tone) Vin +60 dBmV Operating Case Temperature Range TC - 20 to +100 C Storage Temperature Range Tstg - 40 to +100 C DC Supply Voltage ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = 30C, 75 system, unless otherwise noted) Symbol Min Typ Max Unit Bandwidth All BW 5 -- 200 MHz Power Gain (f = 5 MHz) Gp 22.1 22.7 23.5 dB Slope (5-200 MHz) S - 0.2 -- 0.7 dB Gain Flatness (Peak To Valley) (5-200 MHz) -- -- -- 0.4 dB 20 18 -- -- -- -- Characteristic Return Loss -- Input/Output IRL/ORL (@ f = 5-150 MHz) (@ f = 150-200 MHz) dB Composite Second Order (Vout = + 50 dBmV per Ch., Worst Case) dB 6-Channel FLAT 10-Channel FLAT CSO6 CSO10 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA -- -- - 73 - 72 - 68 - 65 MHW1223LA 7.2-7 ELECTRICAL CHARACTERISTICS - continued (VCC = 24 Vdc, TC = 30C, 75 system, unless otherwise noted) Characteristic Symbol Min Typ Max Cross Modulation Distortion (Vout = + 50 dBmV per Ch., Worst Case) dB 6-Channel FLAT 10-Channel FLAT XMD6 XMD10 -- -- - 69 - 63 - 65 - 60 Composite Triple Beat (Vout = + 50 dBmV per Ch., Worst Case) dB 6-Channel FLAT 10-Channel FLAT Noise Figure CTB6 CTB10 MHW1223LA 7.2-8 -- -- - 78 - 69 - 75 - 66 -- 6.3 7 85 95 110 NF (f = 5-200 MHz) DC Current Unit IDC dB mA MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA MHW1224 MHW1244 The RF Line Low Distortion Wideband Amplifiers Designed specifically for broadband applications requiring low distortion characteristics. Specified for use as return amplifiers for mid-split and high-split 2-way cable TV systems. Features all gold metallization system. 22.0 dB 24.0 dB 5.0 - 200 MHz CATV HIGH-SPLIT REVERSE AMPLIFIERS * Guaranteed Broadband Power Gain @ f = 5.0 - 200 MHz * Guaranteed Broadband Noise Figure @ f = 5.0 - 175 MHz * Superior Gain, Return Loss and DC Current Stability with Temperature * All Gold Metallization * All Ion-Implanted Arsenic Emitter Transistor Chips with 6.0 GHz fT's * Circuit Design Optimized for Good RF Stability Under High VSWR Load Conditions * Transformers Designed to Insure Good Low Frequency Gain Stability versus Temperature CASE 714Y-03, STYLE 1 ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Vin + 65 dBmV VCC + 28 Vdc Operating Case Temperature Range TC - 20 to +100 C Storage Temperature Range Tstg - 40 to +100 C RF Voltage Input (Single Tone) DC Supply Voltage ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = + 30C, 75 W system) Characteristic Symbol MHW1224 MHW1244 Units Power Gain @ 10 MHz GP 22.0 0.5 24.0 0.5 dB Frequency Range (Response/Return Loss) Note 1 BW 5.0-200 MHz Cable Slope Equivalent (5.0 - 200 MHz) S - 0.2 Min/+ 0.8 Max dB Gain Flatness (5.0 - 200 MHz) F 0.2 Max dB Input/Output Return Loss (5.0 - 200 MHz) Note 1 IRL/ORL 18.0 Min dB Cross Modulation Distortion @ +50 dBmV per ch. 12-Channel FLAT (5.0 - 120 MHz) 22-Channel FLAT (5.0 - 175 MHz) (2) (3) 26-Channel FLAT (5.0 - 200 MHz) XM12 XM22 XM26 - 67 Typ - 62 Max - 62 Typ - 66 Typ - 61 Max - 61 Typ dB dB dB NOTES: 1. Response and return loss characteristics are tested and guaranteed for the full 5.0 - 200 MHz frequency range. 2. Motorola 100% distortion and noise figure testing is performed over the 5.0 - 175 MHz frequency range. Cross modulation and composite triple beat testing are with 22-channel loading; Video carriers used are: T7 - T13 7.0 - 43.0 MHz 7-Channels 2-6 55.25 - 83.25 MHz 5-Channels A-7 121.25 - 175.25 MHz 10-Channels 3. Video carriers used for 12-Channel typical performances are T7 - 6; For 26-Channel typical performance, Channels 8, 9, 10 and 11 are added to the 22-Channel carriers listed above. REV 9 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MHW1224 MHW1244 7.2-9 ELECTRICAL CHARACTERISTICS -- continued (VCC = 24 Vdc, TC = + 30C, 75 W system) Symbol MHW1224 MHW1244 Units Composite Triple Beat Distortion @ + 50 dBmV per ch. 22-Channel FLAT (5.0 - 175 MHz) Notes 2 and 3 26-Channel FLAT (5.0 - 200 MHz) Characteristic CTB22 CTB26 - 69 Max - 68.5 Typ - 68 Max - 67.5 Typ dB dB Individual Triple Beat Distortion @ + 50 dBmV per ch. Mid-Split (5.0 - 120 MHz) T11, T12 and CH2 @ 123.25 MHz High-Split (5.0 - 175 MHz) T13, CH2 and CH5 @ 175.5 MHz TB3 TB3 - 88 Typ - 85 Typ - 87 Typ - 84 Typ dB dB Second Order Distortion @ + 50 dBmV per ch. High-Split (5.0 - 175 MHz) CH2, CHA @ 176.5 MHz IMD - 72 Max - 72 Max dB Noise Figure High-Split (5.0 - 175 MHz) Note 2 NF 5.5 Max 5.0 Max dB DC Current IDC 210 Typ/240 Max mAdc NOTES: 1. Response and return loss characteristics are tested and guaranteed for the full 5.0 - 200 MHz frequency range. 2. Motorola 100% distortion and noise figure testing is performed over the 5.0 - 175 MHz frequency range. Cross modulation and composite triple beat testing are with 22-channel loading; Video carriers used are: T7 - T13 7.0 - 43.0 MHz 7-Channels 2-6 55.25 - 83.25 MHz 5-Channels A-7 121.25 - 175.25 MHz 10-Channels 3. Video carriers used for 12-Channel typical performances are T7 - 6; For 26-Channel typical performance, Channels 8, 9, 10 and 11 are added to the 22-Channel carriers listed above. MHW1224 MHW1244 7.2-10 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Low Distortion Wideband Reverse Amplifier Modules MHW1224LA Designed specifically for broadband applications requiring low multi-channel distortion characteristics. Specified for use as return amplifiers for 2-way cable TV systems. * Designed for Low Power Consumption * Specified for 6 and 10 Channel Performance * Guaranteed Broadband Power Gain * Guaranteed Broadband Noise Figure * All Gold Metallization * Designed to Ensure Good Gain Stability versus Temperature 5-65 MHz, 22.7 dB CATV LOW CURRENT AMPLIFIER CASE 1302-01, STYLE 1 MAXIMUM RATINGS Parameter Symbol Value Unit VCC +28 Vdc RF Input Voltage (Single Tone) Vin +60 dBmV Operating Case Temperature Range TC - 20 to +100 C Storage Temperature Range Tstg - 40 to +100 C DC Supply Voltage ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = 30C, 75 system, unless otherwise noted) Characteristic Symbol Min Typ Max Unit Bandwidth All BW 5 -- 65 MHz Power Gain (f = 5 MHz) Gp 22.1 22.7 23.2 dB Slope (5-65 MHz) S - 0.2 -- 0.5 dB Gain Flatness (Peak To Valley) (5-65 MHz) -- -- -- 0.4 dB 20 -- -- Return Loss -- Input/Output IRL/ORL (@ f = 5-65 MHz) dB Composite Second Order (Vout = + 50 dBmV per Ch., Worst Case) dB 6-Channel FLAT 10-Channel FLAT CSO6 CSO10 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA -- -- - 73 - 72 - 68 - 65 MHW1224LA 7.2-11 ELECTRICAL CHARACTERISTICS - continued (VCC = 24 Vdc, TC = 30C, 75 system, unless otherwise noted) Characteristic Symbol Min Typ Max Cross Modulation Distortion (Vout = + 50 dBmV per Ch., Worst Case) dB 6-Channel FLAT 10-Channel FLAT XMD6 XMD10 -- -- - 69 - 63 - 65 - 60 Composite Triple Beat (Vout = + 50 dBmV per Ch., Worst Case) dB 6-Channel FLAT 10-Channel FLAT Noise Figure CTB6 CTB10 MHW1224LA 7.2-12 -- -- - 78 - 69 - 75 - 66 -- 6.3 7 85 95 110 NF (f = 5-65 MHz) DC Current Unit IDC dB mA MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Low Distortion Wideband Reverse Amplifier Modules MHW1253LA Designed specifically for broadband applications requiring low multi-channel distortion characteristics. Specified for use as return amplifiers for 2-way cable TV systems. * Designed for Low Power Consumption * Specified for 6 and 10 Channel Performance * Guaranteed Broadband Power Gain * Guaranteed Broadband Noise Figure * All Gold Metallization * Designed to Ensure Good Gain Stability versus Temperature 5-200 MHz, 25.5 dB CATV LOW CURRENT AMPLIFIER CASE 1302-01, STYLE 1 MAXIMUM RATINGS Parameter Symbol Value Unit VCC +28 Vdc RF Input Voltage (Single Tone) Vin +60 dBmV Operating Case Temperature Range TC - 20 to +100 C Storage Temperature Range Tstg - 40 to +100 C DC Supply Voltage ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = 30C, 75 system, unless otherwise noted) Symbol Min Typ Max Unit Bandwidth All BW 5 -- 200 MHz Power Gain (f = 5 MHz) Gp 25 25.5 26 dB Slope (5-200 MHz) S - 0.2 -- 0.7 dB Gain Flatness (Peak To Valley) (5-200 MHz) -- -- -- 0.4 dB 20 18 -- -- -- -- Characteristic Return Loss -- Input/Output IRL/ORL (@ f = 5-150 MHz) (@ f = 150-200 MHz) dB Composite Second Order (Vout = + 50 dBmV per Ch., Worst Case) dB 6-Channel FLAT 10-Channel FLAT CSO6 CSO10 -- -- - 73 - 71 - 68 - 66 REV 1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MHW1253LA 7.2-13 ELECTRICAL CHARACTERISTICS - continued (VCC = 24 Vdc, TC = 30C, 75 system, unless otherwise noted) Characteristic Symbol Min Typ Max Cross Modulation Distortion (Vout = + 50 dBmV per Ch., Worst Case) dB 6-Channel FLAT 10-Channel FLAT XMD6 XMD10 -- -- - 69 - 64 - 65 - 61 Composite Triple Beat (Vout = + 50 dBmV per Ch., Worst Case) dB 6-Channel FLAT 10-Channel FLAT Noise Figure CTB6 CTB10 MHW1253LA 7.2-14 -- -- - 78 - 69 - 75 - 66 -- 5.8 6.5 85 95 110 NF (f = 5-200 MHz) DC Current Unit IDC dB mA MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1254L Low Distortion Wideband Reverse Amplifier Module Designed specifically for broadband applications requiring low distortion characteristics. Specified for use as return amplifiers for low-split, 2-way cable TV systems. Features all gold metallization system. * Guaranteed Broadband Power Gain * Guaranteed Broadband Noise Figure * Superior Gain, Return Loss and DC Current Stability with Temperature * All Gold Metallization * Circuit Design Optimized for Good RF Stability Under High VSWR Load Conditions * Transformers Designed to Insure Good Low Frequency Gain Stability versus Temperature 24 Vdc, 50 MHz, 25 dB CATV LOW CURRENT AMPLIFIER CASE 714Y-03, STYLE 1 MAXIMUM RATINGS Parameter Symbol Value Unit DC Supply Voltage VCC +28 Vdc RF Input Voltage (Single Tone) VIN +70 dBmV Operating Case Temperature Range TC - 20 to +100 C Storage Temperature Range Tstg - 40 to +100 C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = 30C, 75 ohm system, unless otherwise noted) Characteristic Bandwidth Symbol Min Max Unit BW 5.0 50 MHz Power Gain (f = 5.0 MHz) Gp 24.3 25.8 dB Return Loss (@ f = 5.0-50 MHz) RL 20 -- dB Second Order Distortion (Vout = +50 dBmV/ch) IMD -- -70 dBc Cross Modulation XMD4 TB3 -- -62 dBc Triple Beat Distortion (Vout = +50 dBmV/ch) (Vout = +50 dBmV/ch) -- -70 dBc Noise Figure (f = 50 MHz) NF -- 4.5 dB IDC 100 135 mA DC Current REV 1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MHW1254L 7.2-15 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Low Distortion Wideband Reverse Amplifier Modules MHW1254LA Designed specifically for broadband applications requiring low multi-channel distortion characteristics. Specified for use as return amplifiers for 2-way cable TV systems. * Designed for Low Power Consumption * Specified for 6 and 10 Channel Performance * Guaranteed Broadband Power Gain * Guaranteed Broadband Noise Figure * All Gold Metallization * Designed to Ensure Good Gain Stability versus Temperature 5-65 MHz, 25.5 dB CATV LOW CURRENT AMPLIFIER CASE 1302-01, STYLE 1 MAXIMUM RATINGS Parameter Symbol Value Unit VCC +28 Vdc RF Input Voltage (Single Tone) Vin +60 dBmV Operating Case Temperature Range TC - 20 to +100 C Storage Temperature Range Tstg - 40 to +100 C DC Supply Voltage ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = 30C, 75 system, unless otherwise noted) Symbol Min Typ Max Unit Bandwidth All BW 5 -- 65 MHz Power Gain (f = 5 MHz) Gp 25 25.5 26 dB Slope (5-65 MHz) S - 0.2 -- 0.5 dB Gain Flatness (Peak To Valley) (5-65 MHz) -- -- -- 0.4 dB 20 -- -- Characteristic Return Loss -- Input/Output IRL/ORL (@ f = 5-65 MHz) dB Composite Second Order (Vout = + 50 dBmV per Ch., Worst Case) dB 6-Channel FLAT 10-Channel FLAT CSO6 CSO10 -- -- - 73 - 71 - 68 - 66 REV 1 MHW1254LA 7.2-16 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS - continued (VCC = 24 Vdc, TC = 30C, 75 system, unless otherwise noted) Characteristic Symbol Min Typ Max Cross Modulation Distortion (Vout = + 50 dBmV per Ch., Worst Case) dB 6-Channel FLAT 10-Channel FLAT XMD6 XMD10 -- -- - 69 - 64 - 65 - 61 Composite Triple Beat (Vout = + 50 dBmV per Ch., Worst Case) dB 6-Channel FLAT 10-Channel FLAT Noise Figure CTB6 CTB10 -- -- - 78 - 69 - 75 - 66 -- 5.8 6.5 85 95 110 NF (f = 5-65 MHz) DC Current Unit IDC MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA dB mA MHW1254LA 7.2-17 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Low Distortion Wideband Reverse Amplifier Modules MHW1303LA Designed specifically for broadband applications requiring low multi-channel distortion characteristics. Specified for use as return amplifiers for 2-way cable TV systems. * Designed for Low Power Consumption * Specified for 6 and 10 Channel Performance * Guaranteed Broadband Power Gain * Guaranteed Broadband Noise Figure * All Gold Metallization * Designed to Ensure Good Gain Stability versus Temperature 5-200 MHz, 30.8 dB CATV LOW CURRENT AMPLIFIER CASE 1302-01, STYLE 1 MAXIMUM RATINGS Parameter Symbol Value Unit VCC +28 Vdc RF Input Voltage (Single Tone) Vin +60 dBmV Operating Case Temperature Range TC - 20 to +100 C Storage Temperature Range Tstg - 40 to +100 C DC Supply Voltage ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = 30C, 75 system, unless otherwise noted) Characteristic Symbol Min Typ Max Unit Bandwidth All BW 5 -- 200 MHz Power Gain (f = 5 MHz) Gp 30 30.8 31.2 dB Slope (5-200 MHz) S 0 -- 1.0 dB Gain Flatness (Peak To Valley) (5-200 MHz) -- -- -- 0.7 dB 20 18 -- -- -- -- Return Loss -- Input/Output IRL/ORL (@ f = 5-65 MHz) (@ f = 65-200 MHz) dB Composite Second Order (Vout = + 50 dBmV per Ch., Worst Case) dB 6-Channel FLAT 10-Channel FLAT MHW1303LA 7.2-18 CSO6 CSO10 -- -- - 73 - 70 - 68 - 65 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS - continued (VCC = 24 Vdc, TC = 30C, 75 system, unless otherwise noted) Characteristic Symbol Min Typ Max Cross Modulation Distortion (Vout = + 50 dBmV per Ch., Worst Case) dB 6-Channel FLAT 10-Channel FLAT XMD6 XMD10 -- -- - 67 - 61 - 64 - 58 Composite Triple Beat (Vout = + 50 dBmV per Ch., Worst Case) dB 6-Channel FLAT 10-Channel FLAT Noise Figure CTB6 CTB10 -- -- - 76 - 67 - 74 - 64 -- 5 5.7 85 95 110 NF (f = 5-200 MHz) DC Current Unit IDC MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA dB mA MHW1303LA 7.2-19 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Low Distortion Wideband Reverse Amplifier Modules Designed specifically for broadband applications requiring low distortion characteristics. Specified for use as return amplifiers for low-split 2-way cable TV systems. Features all gold metallization system. * Guaranteed Broadband Power Gain * Guaranteed Broadband Noise Figure * Superior Gain, Return Loss and DC Current Stability with Temperature * All Gold Metallization * Circuit Design Optimized for Good RF Stability Under High VSWR Load Conditions * Transformers Designed to Insure Good Low Frequency Gain Stability versus Temperature MHW1304L 24 Vdc 50 MHz 30 dB CATV LOW CURRENT AMPLIFIER CASE 714Y-03, STYLE 1 MAXIMUM RATINGS Parameter Symbol Value Unit DC Supply Voltage VCC +28 Vdc RF Input Voltage (Single Tone) VIN +70 dBmV Operating Case Temperature Range TC - 20 to +100 C Storage Temperature Range Tstg - 40 to +100 C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = 30C, 75 ohm system, unless otherwise noted) Characteristic Symbol Min Max Unit Bandwidth All BW 5.0 50 MHz Power Gain (f = 5.0 MHz) Gp 29.2 30.8 dB Return Loss (@ f = 5.0-50 MHz) RL 18 -- dB Second Order Distortion (Vout = +50 dBmV/ch) IMD -- -70 dBc Cross Modulation XMD4 TB3 -- -57 dBc Triple Beat Distortion (Vout = +50 dBmV/ch) (Vout = +50 dBmV/ch) -- -66 dBc Noise Figure (f = 50 MHz) NF -- 4.5 dB IDC 100 135 mA DC Current REV 2 MHW1304L 7.2-20 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MHW1304LA Low Distortion Wideband Reverse Amplifier Modules Designed specifically for broadband applications requiring low multi-channel distortion characteristics. Specified for use as return amplifiers for 2-way cable TV systems. * Designed for Low Power Consumption * Specified for 6 and 10 Channel Performance * Guaranteed Broadband Power Gain * Guaranteed Broadband Noise Figure * All Gold Metallization * Designed to Ensure Good Gain Stability versus Temperature 5-65 MHz, 30.8 dB CATV LOW CURRENT AMPLIFIER CASE 1302-01, STYLE 1 MAXIMUM RATINGS Parameter Symbol Value Unit VCC +28 Vdc RF Input Voltage (Single Tone) Vin +60 dBmV Operating Case Temperature Range TC - 20 to +100 C Storage Temperature Range Tstg - 40 to +100 C DC Supply Voltage ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = 30C, 75 system, unless otherwise noted) Symbol Min Typ Max Unit Bandwidth All BW 5 -- 65 MHz Power Gain (f = 5 MHz) Gp 30 30.8 31.2 dB Slope (5-65 MHz) S - 0.2 -- 0.5 dB Gain Flatness (Peak To Valley) (5-65 MHz) -- -- -- 0.5 dB 20 -- -- Characteristic Return Loss -- Input/Output IRL/ORL (@ f = 5-65 MHz) dB Composite Second Order (Vout = + 50 dBmV per Ch., Worst Case) dB 6-Channel FLAT 10-Channel FLAT CSO6 CSO10 -- -- - 73 - 70 - 68 - 65 REV 1 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MHW1304LA 7.2-21 ELECTRICAL CHARACTERISTICS - continued (VCC = 24 Vdc, TC = 30C, 75 system, unless otherwise noted) Characteristic Symbol Min Typ Max Cross Modulation Distortion (Vout = + 50 dBmV per Ch., Worst Case) dB 6-Channel FLAT 10-Channel FLAT XMD6 XMD10 -- -- - 67 - 61 - 64 - 58 Composite Triple Beat (Vout = + 50 dBmV per Ch., Worst Case) dB 6-Channel FLAT 10-Channel FLAT Noise Figure CTB6 CTB10 MHW1304LA 7.2-22 -- -- - 76 - 67 - 74 - 64 -- 5 5.7 85 95 110 NF (f = 5-65 MHz) DC Current Unit IDC dB mA MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Low Distortion Wideband Reverse Amplifier Modules MHW1353LA Designed specifically for broadband applications requiring low multi-channel distortion characteristics. Specified for use as return amplifiers for 2-way cable TV systems. * Designed for Low Power Consumption * Specified for 6 and 10 Channel Performance * Guaranteed Broadband Power Gain * Guaranteed Broadband Noise Figure * All Gold Metallization * Designed to Ensure Good Gain Stability versus Temperature 5-150 MHz, 35.2 dB CATV LOW CURRENT AMPLIFIER CASE 1302-01, STYLE 1 MAXIMUM RATINGS Parameter Symbol Value Unit VCC +28 Vdc RF Input Voltage (Single Tone) Vin +60 dBmV Operating Case Temperature Range TC - 20 to +100 C Storage Temperature Range Tstg - 40 to +100 C DC Supply Voltage ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = 30C, 75 system, unless otherwise noted) Characteristic Symbol Min Typ Max Unit Bandwidth All BW 5 -- 150 MHz Power Gain (f = 5 MHz) Gp 34.5 35.2 35.7 dB Slope (5-150 MHz) S 0 -- 1 dB Gain Flatness (Peak To Valley) (5-150 MHz) -- -- -- 0.7 dB 20 18 -- -- -- -- Return Loss -- Input/Output IRL/ORL (@ f = 5-65 MHz) (@ f = 65-150 MHz) dB Composite Second Order (Vout = + 50 dBmV per Ch., Worst Case) dB 6-Channel FLAT 10-Channel FLAT CSO6 CSO10 -- -- - 73 - 69 - 68 - 65 REV 0 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MHW1353LA 7.2-23 ELECTRICAL CHARACTERISTICS - continued (VCC = 24 Vdc, TC = 30C, 75 system, unless otherwise noted) Characteristic Symbol Min Typ Max Cross Modulation Distortion (Vout = + 50 dBmV per Ch., Worst Case) dB 6-Channel FLAT 10-Channel FLAT XMD6 XMD10 -- -- - 66 - 60 - 63 - 57 Composite Triple Beat (Vout = + 50 dBmV per Ch., Worst Case) dB 6-Channel FLAT 10-Channel FLAT Noise Figure CTB6 CTB10 MHW1353LA 7.2-24 -- -- - 75 - 65 - 73 - 62 -- 4.4 5.4 85 95 110 NF (f = 5-150 MHz) DC Current Unit IDC dB mA MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Low Distortion Wideband Reverse Amplifier Modules MHW1354LA Designed specifically for broadband applications requiring low multi-channel distortion characteristics. Specified for use as return amplifiers for 2-way cable TV systems. * Designed for Low Power Consumption * Specified for 6 and 10 Channel Performance * Guaranteed Broadband Power Gain * Guaranteed Broadband Noise Figure * All Gold Metallization * Designed to Ensure Good Gain Stability versus Temperature 5-65 MHz, 35 dB CATV LOW CURRENT AMPLIFIER CASE 1302-01, STYLE 1 MAXIMUM RATINGS Parameter Symbol Value Unit VCC +28 Vdc RF Input Voltage (Single Tone) Vin +60 dBmV Operating Case Temperature Range TC - 20 to +100 C Storage Temperature Range Tstg - 40 to +100 C DC Supply Voltage ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = 30C, 75 system, unless otherwise noted) Characteristic Symbol Min Typ Max Unit Bandwidth All BW 5 -- 65 MHz Power Gain (f = 5 MHz) Gp 34.5 35 35.7 dB Slope (5-65 MHz) S - 0.2 -- 0.5 dB Gain Flatness (Peak To Valley) (5-65 MHz) -- -- -- 0.5 dB 20 -- -- Return Loss -- Input/Output IRL/ORL (@ f = 5-65 MHz) dB Composite Second Order (Vout = + 50 dBmV per Ch., Worst Case) dB 6-Channel FLAT 10-Channel FLAT CSO6 CSO10 -- -- - 73 - 69 - 68 - 65 REV 0 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MHW1354LA 7.2-25 ELECTRICAL CHARACTERISTICS - continued (VCC = 24 Vdc, TC = 30C, 75 system, unless otherwise noted) Characteristic Symbol Min Typ Max Cross Modulation Distortion (Vout = + 50 dBmV per Ch., Worst Case) dB 6-Channel FLAT 10-Channel FLAT XMD6 XMD10 -- -- - 66 - 60 - 63 - 57 Composite Triple Beat (Vout = + 50 dBmV per Ch., Worst Case) dB 6-Channel FLAT 10-Channel FLAT Noise Figure CTB6 CTB10 MHW1354LA 7.2-26 -- -- - 75 - 65 - 73 - 62 -- 4.4 5.2 85 95 110 NF (f = 5-65 MHz) DC Current Unit IDC dB mA MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 77-Channel (550 MHz) CATV Amplifier MHW6342T The MHW6342T is designed specifically for 550 MHz CATV applications. Features ion-implanted arsenic emitter transistors with 7 GHz fT and an all gold metallization system. 34 dB GAIN 550 MHz 77-CHANNEL CATV AMPLIFIER * Specified for 77-Channel Performance * Broadband Power Gain @ f = 40 - 550 MHz Gp = 34.5 dB (Typ) @ 50 MHz Gp = 35.2 dB (Typ) @ 550 MHz * Broadband Noise Figure @ 550 MHz NF = 5.5 dB (Typ) * Superior Gain, Return Loss and DC Current Stability with Temperature * All Gold Metallization * 7 GHz Ion-Implanted Transistors CASE 1302-01, STYLE 1 ABSOLUTE MAXIMUM RATINGS Rating RF Voltage Input (Single Tone) DC Supply Voltage Symbol Value Unit Vin + 55 dBmV VCC + 28 Vdc Operating Case Temperature Range TC - 20 to +100 C Storage Temperature Range Tstg - 40 to +100 C ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Symbol Min Typ Max Unit BW 40 -- 550 MHz Power Gain 50 MHz Gp 33.5 34.5 35.5 dB Power Gain 550 MHz Gp 34.5 35.2 -- dB Slope S 0 0.7 2 dB Gain Flatness (Peak To Valley) -- -- 0.3 0.8 dB IRL/ORL 18 16 -- -- -- -- dB -- -- - 80 - 74 -- -- -- -- - 62 - 63 -- - 57 Return Loss -- Input/Output (Zo = 75 Ohms) 40 - 550 MHz 450 - 550 MHz Second Order Intermodulation Distortion (Vout = + 46 dBmV per ch., Ch 2, M13, M22) (Vout = + 44 dBmV per ch., Ch 2, M30, M39) Cross Modulation Distortion (Vout = + 46 dBmV per ch.) (Vout = + 44 dBmV per ch.) IMD dB dB 60-Channel FLAT 77-Channel FLAT XMD60 XMD77 REV 3 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MHW6342T 7.2-27 ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Composite Triple Beat (Vout = + 46 dBmV per ch.) (Vout = + 44 dBmV per ch.) dB 60-Channel FLAT 77-Channel FLAT Composite Second Order (Vout = + 46 dBmV/ch, 60-Channel FLAT) (Vout = + 44 dBmV/ch, 77-Channel FLAT) Noise Figure DC Current MHW6342T 7.2-28 CTB60 CTB77 -- -- - 64 - 63 -- - 57 CSO60 CSO77 -- -- - 70 - 65 -- - 57 NF -- 5.5 6.5 dB IDC -- 310 340 mA dB 550 MHz MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MHW7182B 110-Channel 750 MHz CATV Amplifier * Specified for 77 and 110-Channel Performance 18 dB GAIN 750 MHz 110-CHANNEL CATV AMPLIFIER * Broadband Power Gain @ f = 750 MHz Gp = 19 dB (Typ) * Broadband Noise Figure NF = 5.0 dB (Typ) @ 750 MHz * All Gold Metallization * Improved Distortion Performance MAXIMUM RATINGS Rating Symbol Value Unit Vin +70 dBmV VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C RF Voltage Input (Single Tone) DC Supply Voltage CASE 714Y-03, STYLE 1 ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Power Gain 50 MHz 750 MHz Slope 40 - 750 MHz Gain Flatness (40 - 750 MHz, Peak to Valley) Return Loss -- Input/Output (Zo = 75 Ohms) @ 40 MHz @ f > 40 MHz (Derate) Symbol Min Typ Max Unit BW Gp 40 -- 750 MHz 18 18.2 18.5 19 19 20 dB S 0 0.4 1 dB -- -- 0.3 0.6 dB 20 -- -- -- -- 0.005 dB dB/MHz IRL/ORL Composite Second Order (Vout = + 40 dBmV/ch., Worst Case) (Vout = + 44 dBmV/ch., Worst Case) 110-Channel FLAT 77-Channel FLAT CSO110 CSO77 -- -- -70 -70 -63 -64 Cross Modulation Distortion @ Ch 2 (Vout = + 40 dBmV/ch., FM = 55 MHz) (Vout = + 44 dBmV/ch., FM = 55 MHz) 110-Channel FLAT 77-Channel FLAT XMD110 XMD77 -- -- -66 -61 -64 -59 Composite Triple Beat (Vout = + 40 dBmV/ch., Worst Case) (Vout = + 44 dBmV/ch., Worst Case) 110-Channel FLAT 77-Channel FLAT CTB110 CTB77 -- -- -68 -66 -66 -64 NF -- -- -- 4.0 4.5 5.0 5.0 -- 6.5 dB IDC 180 220 240 mA Noise Figure DC Current (VDC = 24 V, TC = 30C) dBc dBc dBc 50 MHz 550 MHz 750 MHz MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MHW7182B 7.2-29 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line High Output Power Doubler 750 MHz CATV Amplifier MHW7185C * Specified for 77 and 110-Channel Performance * Broadband Power Gain @ f = 40 - 750 MHz Gp = 19.4 dB (Typ) 19.4 dB GAIN 750 MHz 110-CHANNEL CATV AMPLIFIER * Broadband Noise Figure NF = 6.2 dB (Typ) @ 750 MHz * Superior Gain, Return Loss and DC Current Stability with Temperature * All Gold Metallization * 7 GHz fT Ion-Implanted Transistors MAXIMUM RATINGS Rating RF Voltage Input (Single Tone) DC Supply Voltage Symbol Value Unit Vin +70 dBmV VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C CASE 714Y-03, STYLE 1 ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Power Gain 50 MHz 750 MHz Slope 40 - 750 MHz Gain Flatness (40 - 750 MHz, Peak to Valley) Return Loss -- Input/Output (Zo = 75 Ohms) @ 40 MHz @ f > 40 MHz (Derate) Composite Second Order (Vout = + 44 dBmV/ch., Worst Case) Cross Modulation Distortion @ Ch 2 (Vout = + 44 dBmV/ch., FM = 55 MHz) Composite Triple Beat (Vout = + 44 dBmV/ch., Worst Case) Noise Figure DC Current (VDC = 24 V, TC = 30C) Symbol Min Typ Max Unit BW 40 -- 750 MHz Gp 18.3 19 18.8 19.4 19.3 20 dB S 0 0.4 1.0 dB -- -- 0.3 0.6 dB 19 -- -- -- -- 0.006 dB dB/MHz IRL/ORL dBc 110-Channel FLAT 77-Channel FLAT CSO110 CSO77 -- -- -72 -80 -64 -68 110-Channel FLAT 77-Channel FLAT XMD110 XMD77 -- -- -66 -70 -63 -68 110-Channel FLAT 77-Channel FLAT CTB110 CTB77 -- -- -64 -71 -62 -69 NF -- -- -- 5.0 5.8 6.2 6.0 -- 7.5 dB IDC 365 400 435 mA dBc dBc 50 MHz 550 MHz 750 MHz REV 5 MHW7185C 7.2-30 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MHW7185CL High Output Power Doubler 750 MHz CATV Amplifier * Specified for 77 and 110-Channel Performance 19.2 dB GAIN 750 MHz 110-CHANNEL CATV AMPLIFIER * Broadband Power Gain @ f = 750 MHz Gp = 19.2 dB (Typ) * Broadband Noise Figure NF = 6.5 dB (Typ) @ 750 MHz * All Gold Metallization * Lower DC Current Consumption * Superior DC Current Stability with Temperature MAXIMUM RATINGS Rating Symbol Value Unit Vin +70 dBmV VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C RF Voltage Input (Single Tone) DC Supply Voltage CASE 714Y-03, STYLE 1 ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Power Gain 50 MHz 750 MHz Slope 40 - 750 MHz Gain Flatness (40 - 750 MHz, Peak to Valley) Return Loss -- Input/Output (Zo = 75 Ohms) @ 40 MHz @ f > 40 MHz (Derate) Composite Second Order (Vout = + 44 dBmV/ch., Worst Case) Cross Modulation Distortion @ Ch 2 (Vout = + 44 dBmV/ch., FM = 55 MHz) Composite Triple Beat (Vout = + 44 dBmV/ch., Worst Case) Noise Figure Symbol Min Typ Max Unit BW 40 -- 750 MHz Gp 18 18.7 18.5 19.2 19 19.7 dB S 0.3 0.6 1.3 dB -- -- 0.3 0.6 dB 20 -- -- -- -- 0.007 dB dB/MHz IRL/ORL dBc 110-Channel FLAT 77-Channel FLAT CSO110 CSO77 -- -- -70 -83 -64 -68 110-Channel FLAT 77-Channel FLAT XMD110 XMD77 -- -- -66 -69 -63 -67 110-Channel FLAT 77-Channel FLAT CTB110 CTB77 -- -- -63.5 -70 -61 -68 NF -- -- -- 5.3 5.8 6.5 6.2 -- 7.5 dB IDC 345 370 385 mA dBc dBc 50 MHz 550 MHz 750 MHz DC Current (VDC = 24 V, TC = -20 to +100C) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MHW7185CL 7.2-31 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line High Output Power Doubler 750 MHz CATV Amplifier MHW7205C * Specified for 77 and 110-Channel Performance * Broadband Power Gain @ f = 40 - 750 MHz Gp = 20.2 dB (Typ) 20.2 dB GAIN 750 MHz 110-CHANNEL CATV AMPLIFIER * Broadband Noise Figure NF = 6.2 dB (Typ) @ 750 MHz * All Gold Metallization * 7 GHz fT Ion-Implanted Transistors * Composite Triple Beat @ 110-Channel Loading CTB = -63 dB (Typ) MAXIMUM RATINGS Rating RF Voltage Input (Single Tone) Symbol Value Unit Vin +70 dBmV VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C DC Supply Voltage CASE 714Y-03, STYLE 1 ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Power Gain 50 MHz 750 MHz Slope 40 - 750 MHz Gain Flatness (40 - 750 MHz, Peak to Valley) Return Loss -- Input/Output (Zo = 75 Ohms) @ 40 MHz @ f > 40 MHz (Derate) Composite Second Order (Vout = + 44 dBmV/ch., Worst Case) Cross Modulation Distortion @ Ch 2 (Vout = + 44 dBmV/ch., FM = 55 MHz) Composite Triple Beat (Vout = + 44 dBmV/ch., Worst Case) Noise Figure DC Current (VDC = 24 V, TC = 30C) Symbol Min Typ Max Unit BW 40 -- 750 MHz Gp 19.3 20 19.8 20.2 20.3 21 dB S 0 0.4 1.0 dB -- -- 0.3 0.6 dB 19 -- -- -- -- 0.006 dB dB/MHz IRL/ORL dBc 110-Channel FLAT 77-Channel FLAT CSO110 CSO77 -- -- -70 -80 -63 -68 110-Channel FLAT 77-Channel FLAT XMD110 XMD77 -- -- -67 -70 -62 -68 110-Channel FLAT 77-Channel FLAT CTB110 CTB77 -- -- -63 -71 -61 -69 NF -- -- -- 5.0 5.8 6.2 6.0 -- 7.5 dB IDC 365 400 435 mA dBc dBc 50 MHz 550 MHz 750 MHz REV 5 MHW7205C 7.2-32 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MHW7205CL High Output Power Doubler 750 MHz CATV Amplifier * Specified for 77 and 110-Channel Performance 20 dB GAIN 750 MHz 110-CHANNEL CATV AMPLIFIER * Broadband Power Gain @ f = 750 MHz Gp = 20 dB (Typ) * Broadband Noise Figure NF = 6.2 dB (Typ) @ 750 MHz * Composite Triple Beat @ 110-Channel Loading CTB = -63 dB (Typ) * Lower DC Current Consumption and Superior DC Stability with Temperature MAXIMUM RATINGS Rating Symbol Value Unit Vin +70 dBmV VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C RF Voltage Input (Single Tone) DC Supply Voltage CASE 714Y-03, STYLE 1 ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Power Gain 50 MHz 750 MHz Slope 40 - 750 MHz Gain Flatness (40 - 750 MHz, Peak to Valley) Return Loss -- Input/Output (Zo = 75 Ohms) @ 40 MHz @ f > 40 MHz (Derate) Composite Second Order (Vout = + 44 dBmV/ch., Worst Case) Cross Modulation Distortion @ Ch 2 (Vout = + 44 dBmV/ch., FM = 55 MHz) Composite Triple Beat (Vout = + 44 dBmV/ch., Worst Case) Noise Figure Symbol Min Typ Max Unit BW 40 -- 750 MHz Gp 19 19.7 19.5 20 20 21.2 dB S 0.2 0.5 1.7 dB -- -- 0.3 0.8 dB 20 -- -- -- -- 0.007 dB dB/MHz IRL/ORL dBc 110-Channel FLAT 77-Channel FLAT CSO110 CSO77 -- -- -69 -80 -63 -67 110-Channel FLAT 77-Channel FLAT XMD110 XMD77 -- -- -65 -69 -62 -66 110-Channel FLAT 77-Channel FLAT CTB110 CTB77 -- -- -63 -70 -61 -68 NF -- -- -- 5.0 5.8 6.2 6.2 -- 7.5 dB IDC 345 365 385 mA dBc dBc 50 MHz 550 MHz 750 MHz DC Current (VDC = 24 V, TC = -20 to +100C) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MHW7205CL 7.2-33 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 110-Channel (750 MHz) CATV Amplifier MHW7222B The MHW7222B is designed specifically for up to 750 MHz CATV systems as amplifiers in trunk, bridge and line extender applications. This amplifier features ion-implanted, arsenic emitter transistors, an all gold metallization system and offers improved ruggedness and distortion performance. * Specified for 110-Channel Performance * Broadband Power Gain -- @ f = 40 - 750 MHz Gp = 22.7 dB Typ @ 750 MHz * Broadband Noise Figure NF = 5.0 dB Typ @ 750 MHz * All Gold Metallization 750 MHz 22 dB GAIN 110-CHANNEL CATV AMPLIFIER CASE 1302-01, STYLE 1 ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit VCC + 28 Vdc RF Input Voltage (Single Tone) Vin + 70 dBmV Operating Case Temperature Range TC - 20 to +100 C Storage Temperature Range Tstg - 40 to +100 C DC Supply Voltage ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = + 30C, 75 system unless otherwise noted) Characteristic Symbol Min Typ Max Unit BW 40 -- 750 MHz f = 50 MHz f = 750 MHz Gp 21.4 22.2 21.9 22.7 22.4 23.2 dB S 0.2 0.7 1.2 -- (f = 40 - 750 MHz) Gf -- 0.4 0.6 -- IRL/ORL 20 25 -- dB RLD -- -- 0.006 dB/MHz CSO110 CSO77 -- -- - 67 - 67 - 60 - 60 Frequency Range Power Gain Slope (f = 40 - 750 MHz) Gain Flatness (Peak To Valley) Input/Output Return Loss @ f = 40 MHz Derate Return Loss @ f > 40 MHz Composite Second Order (Vout = + 40 dBmV/ch; 110 Channels) (Vout = + 44 dBmV/ch; 77 Channels) dB REV 1 MHW7222B 7.2-34 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued Characteristic Symbol Min Typ Max Cross Modulation Distortion (Vout = + 40 dBmV/ch, 110-Channel @ Fm = 55.25 MHz) (Vout = + 44 dBmV/ch, 77-Channel @ Fm = 55.25 MHz) XMD110 XMD77 -- -- - 63 - 59 - 60 - 56 Composite Triple Beat (Vout = + 40 dBmV/ch, 110-Channels, Worst Case) (Vout = + 44 dBmV/ch, 77-Channels, Worst Case) CTB110 CTB77 -- -- - 64 - 65 - 61 - 62 NF -- -- 3.7 5 4.5 6.5 dB IDC 180 220 240 mA Noise Figure f = 50 MHz f = 750 MHz DC Current MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Unit dBc dBc MHW7222B 7.2-35 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 110-Channel (750 MHz) CATV Line Extender Amplifier MHW7272A * 24 V Supply Voltage * Specified for 110-Channel Performance * Typical Noise Figure NF = 5.5 dB @ 750 MHz 27 dB GAIN 750 MHz 110-CHANNEL CATV AMPLIFIER * All Gold Metallization * Improved CTB Performance over Previous Versions MAXIMUM RATINGS Rating Symbol Value Unit Vin +55 dBmV VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C RF Voltage Input (Single Tone) DC Supply Voltage CASE 714Y-03, STYLE 1 ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Symbol Frequency Range Min Typ Max Unit BW 40 -- 750 MHz Gp 26.2 27 27.2 27.7 27.8 29 dB S 0 0.7 1.5 dB -- -- 0.4 0.8 dB Return Loss -- Input/Output (Zo = 75 Ohms) @ 40 MHz @ f > 40 MHz (Derate) IRL/ORL 20 -- -- -- -- 0.007 dB dB/MHz Composite Second Order (Vout = + 40 dBmV/ch., Worst Case) CSO110 -- - 70 - 64 dBc 110-Channel FLAT Cross Modulation Distortion @ Ch 2 (Vout = + 40 dBmV/ch., FM = 55 MHz) XMD110 -- - 63 - 60 dBc 110-Channel FLAT Composite Triple Beat (Vout = + 40 dBmV/ch., Worst Case) CTB110 -- - 68 - 64 dBc 110-Channel FLAT NF -- -- -- 5.5 5.5 6.5 dB IDC 280 310 350 mA Power Gain 50 MHz 750 MHz Slope 40 -750 MHz Gain Flatness (40 -750 MHz, Peak to Valley) Noise Figure DC Current (VDC = 24 V, TC = 30C) MHW7272A 7.2-36 50 MHz 750 MHz MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA The RF Line 110-Channel (750 MHz) CATV Line Extender Amplifier MHW7292 * 24 V Supply Voltage * Specified for 110-Channel Performance * Superior Gain, Return Loss and DC Current Stability with Temperature 29 dB GAIN 750 MHz 110-CHANNEL CATV AMPLIFIER * All Gold Metallization * 7 GHz fT Ion-Implanted Transistors MAXIMUM RATINGS Rating Symbol Value Unit Vin +55 dBmV VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C RF Voltage Input (Single Tone) DC Supply Voltage CASE 714Y-03, STYLE 1 ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Symbol Min Typ Max Unit BW 40 -- 750 MHz Gp 28.2 29 29 29.8 29.8 31 dB S 0 0.7 2 dB -- -- 0.4 0.8 dB Return Loss -- Input/Output (Zo = 75 Ohms) @ 40 MHz @ f > 40 MHz (Derate) IRL/ORL 20 -- -- -- -- 0.007 dB dB/MHz Composite Second Order (Vout = + 40 dBmV/ch., Worst Case) CSO110 -- - 70 - 60 dBc 110-Channel FLAT Cross Modulation Distortion @ Ch 2 (Vout = + 40 dBmV/ch., FM = 55 MHz) XMD110 -- - 62 - 60 dBc 110-Channel FLAT Composite Triple Beat (Vout = + 40 dBmV/ch., Worst Case) CTB110 -- - 62 - 60 dBc 110-Channel FLAT NF -- -- -- 5.5 5.5 6.5 dB IDC 280 310 350 mA Frequency Range Power Gain 50 MHz 750 MHz Slope 40 -750 MHz Gain Flatness (40 -750 MHz, Peak to Valley) Noise Figure 50 MHz 750 MHz DC Current (VDC = 24 V, TC = 30C) REV 2 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MHW7292 7.2-37 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN SEMICONDUCTOR TECHNICAL DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 128-Channel 860 MHz CATV Amplifier MHW8182B * Specified for 77, 110 and 128-Channel Performance * Broadband Power Gain @ f = 860 MHz Gp = 19.1 dB (Typ) 18 dB GAIN 860 MHz 128-CHANNEL CATV AMPLIFIER * Broadband Noise Figure NF = 5.5 dB (Typ) @ 860 MHz * All Gold Metallization * Improved CTB Distortion Performance MAXIMUM RATINGS Rating Symbol Value Unit Vin +70 dBmV VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C RF Voltage Input (Single Tone) DC Supply Voltage CASE 714Y-03, STYLE 1 ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Power Gain 50 MHz 860 MHz Slope 40 - 860 MHz Gain Flatness (40 - 860 MHz, Peak to Valley) Return Loss -- Input/Output (Zo = 75 Ohms) @ 40 MHz @ f > 40 MHz (Derate) Symbol Min Typ Max Unit BW Gp 40 -- 860 MHz 18 18.2 18.5 19.1 19 20.5 dB S 0 0.7 2.5 dB -- -- 0.3 0.6 dB 20 -- -- -- -- 0.005 dB dB/MHz IRL/ORL Composite Second Order (Vout = + 38 dBmV/ch., Worst Case) (Vout = + 40 dBmV/ch., Worst Case) (Vout = + 44 dBmV/ch., Worst Case) 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT CSO128 CSO110 CSO77 -- -- -- -71 -70 -70 -64 -63 -64 Cross Modulation Distortion @ Ch 2 (Vout = + 38 dBmV/ch., FM = 55 MHz) (Vout = + 40 dBmV/ch., FM = 55 MHz) (Vout = + 44 dBmV/ch., FM = 55 MHz) 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT XMD128 XMD110 XMD77 -- -- -- -68 -66 -61 -65 -64 -59 Composite Triple Beat (Vout = + 38 dBmV/ch., Worst Case) (Vout = + 40 dBmV/ch., Worst Case) (Vout = + 44 dBmV/ch., Worst Case) 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT CTB128 CTB110 CTB77 -- -- -- -69 -68 -66 -66 -66 -64 NF -- -- -- -- 4.0 4.5 5.0 5.5 5.0 -- 6.5 7.5 dB IDC 180 220 240 mA Noise Figure DC Current (VDC = 24 V, TC = 30C) MHW8182B 7.2-38 dBc dBc dBc 50 MHz 550 MHz 750 MHz 860 MHz MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line High Output Power Doubler 860 MHz CATV Amplifier MHW8185 * Specified for 77, 110 and 128-Channel Performance * Broadband Power Gain @ f = 40 - 860 MHz Gp = 19.4 dB (Typ) 19.4 dB GAIN 860 MHz 128-CHANNEL CATV AMPLIFIER * Broadband Noise Figure NF = 7 dB (Typ) @ 860 MHz * Superior Gain, Return Loss and DC Current Stability with Temperature * All Gold Metallization * 7 GHz fT Ion-Implanted Transistors MAXIMUM RATINGS Rating RF Voltage Input (Single Tone) DC Supply Voltage Symbol Value Unit Vin +70 dBmV VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C CASE 714Y-03, STYLE 1 ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Power Gain 50 MHz 860 MHz Slope 40 - 860 MHz Gain Flatness (40 - 860 MHz, Peak to Valley) Return Loss -- Input/Output (Zo = 75 Ohms) @ 40 MHz @ f > 40 MHz (Derate) Composite Second Order (Vout = + 40 dBmV/ch., Worst Case) (Vout = + 44 dBmV/ch., Worst Case) Cross Modulation Distortion @ Ch 2 (Vout = + 40 dBmV/ch., FM = 55 MHz) (Vout = + 44 dBmV/ch., FM = 55 MHz) Composite Triple Beat (Vout = + 40 dBmV/ch., Worst Case) (Vout = + 44 dBmV/ch., Worst Case) Noise Figure DC Current (VDC = 24 V, TC = 30C) Symbol Min Typ Max Unit BW 40 -- 860 MHz Gp 18.3 19 18.8 19.4 19.3 20.5 dB S 0 .5 1.5 dB -- -- 0.3 1.0 dB 19 -- -- -- -- 0.006 dB dB/MHz IRL/ORL dBc 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT CSO128 CSO110 CSO77 -- -- -- -70 -72 -80 - 62 - 64 - 68 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT XMD128 XMD110 XMD77 -- -- -- -72 -67 -70 - 64 - 63 - 68 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT CTB128 CTB110 CTB77 -- -- -- -67 -64 -71 - 64 - 62 - 69 NF -- -- -- -- 5.0 5.8 6.2 7.0 6.0 -- -- 8.0 dB IDC 365 400 435 mA dBc dBc 50 MHz 550 MHz 750 MHz 860 MHz REV 4 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MHW8185 7.2-39 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MHW8185L High Output Power Doubler 870 MHz CATV Amplifier * Specified for 77, 110 and 128-Channel Performance 19.4 dB GAIN 870 MHz 128-CHANNEL CATV AMPLIFIER * Broadband Power Gain @ f = 40 - 870 MHz Gp = 19.4 dB (Typ) * Lower DC Current Consumption * Superior DC Current Stability with Temperature MAXIMUM RATINGS Rating Symbol Value Unit Vin +70 dBmV VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C RF Voltage Input (Single Tone) DC Supply Voltage CASE 714Y-03, STYLE 1 ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Power Gain 50 MHz 870 MHz Slope 40 - 870 MHz Gain Flatness (40 - 870 MHz, Peak-to-Valley) Return Loss -- Input/Output (Zo = 75 Ohms) @ 40 MHz @ f > 40 MHz (Derate) Symbol Min Typ Max Unit BW 40 -- 870 MHz Gp 18 19 18.5 19.4 19 20.5 dB S 0.4 0.9 1.4 dB -- -- 0.3 0.8 dB 20 -- -- -- -- 0.007 dB dB/MHz IRL/ORL Composite Second Order (Vout = + 40 dBmV/ch., Worst Case) (Vout = + 44 dBmV/ch., Worst Case) (Vout = + 44 dBmV/ch., Worst Case) 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT CSO128 CSO110 CSO77 -- -- -- -69 -70 -85 - 62 - 64 - 68 Cross Modulation Distortion @ Ch 2 (Vout = + 40 dBmV/ch., FM = 55 MHz) (Vout = + 44 dBmV/ch., FM = 55 MHz) (Vout = + 44 dBmV/ch., FM = 55 MHz) 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT XMD128 XMD110 XMD77 -- -- -- -72 -66 -69 - 64 - 63 - 67 Composite Triple Beat (Vout = + 40 dBmV/ch., Worst Case) (Vout = + 44 dBmV/ch., Worst Case) (Vout = + 44 dBmV/ch., Worst Case) 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT CTB128 CTB110 CTB77 -- -- -- -66 -63 -70 - 63 - 61 - 68 NF -- -- -- -- 5.3 5.8 6.6 7.8 6.2 -- -- 8.5 dB IDC 345 365 385 mA Noise Figure dBc dBc dBc 50 MHz 550 MHz 750 MHz 870 MHz DC Current (VDC = 24 V, TC = -20 to +100C) MHW8185L 7.2-40 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA MHW8185LR High Output Power Doubler 870 MHz CATV Amplifier * Specified for 77, 110 and 128-Channel Performance 19.4 dB GAIN 870 MHz 128-CHANNEL CATV AMPLIFIER * Broadband Power Gain @ f = 40 - 870 MHz Gp = 19.4 dB (Typ) * Lower DC Current Consumption * Superior DC Current Stability with Temperature MAXIMUM RATINGS Rating Symbol Value Unit Vin +70 dBmV VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C RF Voltage Input (Single Tone) DC Supply Voltage CASE 714Y-03, STYLE 2 ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Power Gain 50 MHz 870 MHz Slope 40 - 870 MHz Gain Flatness (40 - 870 MHz, Peak-to-Valley) Return Loss -- Input/Output (Zo = 75 Ohms) @ 40 MHz @ f > 40 MHz (Derate) Symbol Min Typ Max Unit BW 40 -- 870 MHz Gp 18 19 18.5 19.4 19 20.5 dB S 0.4 0.9 1.4 dB -- -- 0.3 0.8 dB 20 -- -- -- -- 0.007 dB dB/MHz IRL/ORL Composite Second Order (Vout = + 40 dBmV/ch., Worst Case) (Vout = + 44 dBmV/ch., Worst Case) (Vout = + 44 dBmV/ch., Worst Case) 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT CSO128 CSO110 CSO77 -- -- -- -69 -70 -85 - 62 - 64 - 68 Cross Modulation Distortion @ Ch 2 (Vout = + 40 dBmV/ch., FM = 55 MHz) (Vout = + 44 dBmV/ch., FM = 55 MHz) (Vout = + 44 dBmV/ch., FM = 55 MHz) 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT XMD128 XMD110 XMD77 -- -- -- -72 -66 -69 - 64 - 63 - 67 Composite Triple Beat (Vout = + 40 dBmV/ch., Worst Case) (Vout = + 44 dBmV/ch., Worst Case) (Vout = + 44 dBmV/ch., Worst Case) 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT CTB128 CTB110 CTB77 -- -- -- -66 -63 -70 - 63 - 61 - 68 NF -- -- -- -- 5.3 5.8 6.6 7.8 6.2 -- -- 8.5 dB IDC 345 365 385 mA Noise Figure dBc dBc dBc 50 MHz 550 MHz 750 MHz 870 MHz DC Current (VDC = 24 V, TC = -20 to +100C) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MHW8185LR 7.2-41 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN The RF Line MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Output Mirror Power Doubler 860 MHz CATV Amplifier MHW8185R * Specified for 77, 110 and 128-Channel Performance * Broadband Power Gain @ f = 860 MHz Gp = 19.4 dB (Typ) 19.4 dB GAIN 860 MHz 128-CHANNEL CATV AMPLIFIER * Broadband Noise Figure NF = 7 dB (Typ) @ 860 MHz * Pin Configuration Mirrors that of MHW8185 * Typical CTB @ 860 MHz under 128-Channel FLAT Loading = -67 dBc * All Gold Metallization * 7 GHz fT Ion-Implanted Transistors MAXIMUM RATINGS Rating Symbol Value Unit Vin +70 dBmV VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C RF Voltage Input (Single Tone) DC Supply Voltage CASE 714Y-03, STYLE 2 ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Power Gain 50 MHz 860 MHz Slope 40 - 860 MHz Gain Flatness (40 - 860 MHz, Peak to Valley) Return Loss -- Input/Output (Zo = 75 Ohms) @ 40 MHz @ f > 40 MHz (Derate) Composite Second Order (Vout = + 40 dBmV/ch., Worst Case) (Vout = + 44 dBmV/ch., Worst Case) Cross Modulation Distortion @ Ch 2 (Vout = + 40 dBmV/ch., FM = 55 MHz) (Vout = + 44 dBmV/ch., FM = 55 MHz) Composite Triple Beat (Vout = + 40 dBmV/ch., Worst Case) (Vout = + 44 dBmV/ch., Worst Case) Noise Figure DC Current (VDC = 24 V, TC = 30C) Symbol Min Typ Max Unit BW 40 -- 860 MHz Gp 18.3 19 18.8 19.4 19.3 20.5 dB S 0 .5 1.5 dB -- -- 0.3 1.0 dB 19 -- -- -- -- 0.006 dB dB/MHz IRL/ORL dBc 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT CSO128 CSO110 CSO77 -- -- -- -70 -72 -80 - 62 - 64 - 68 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT XMD128 XMD110 XMD77 -- -- -- -72 -67 -70 - 64 - 63 - 68 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT CTB128 CTB110 CTB77 -- -- -- -67 -64 -71 - 64 - 62 - 69 NF -- -- -- -- 5.0 5.8 6.2 7.0 6.0 -- -- 8.0 dB IDC 365 400 435 mA dBc dBc 50 MHz 550 MHz 750 MHz 860 MHz REV 1 MHW8185R 7.2-42 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN The RF Line MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line High Output Power Doubler 860 MHz CATV Amplifier MHW8205 * Specified for 77, 110 and 128-Channel Performance * Broadband Power Gain @ f = 40 - 860 MHz Gp = 20.2 dB (Typ) 20.2 dB GAIN 860 MHz 128-CHANNEL CATV AMPLIFIER * Broadband Noise Figure NF = 7 dB (Typ) @ 860 MHz * All Gold Metallization * 7 GHz fT Ion-Implanted Transistors * Composite Triple Beat @ 128-Channel Loading CTB = -66 dB (Typ) MAXIMUM RATINGS Rating RF Voltage Input (Single Tone) Symbol Value Unit Vin +70 dBmV VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C DC Supply Voltage CASE 714Y-03, STYLE 1 ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Power Gain 50 MHz 860 MHz Slope 40 - 860 MHz Gain Flatness (40 - 860 MHz, Peak to Valley) Return Loss -- Input/Output (Zo = 75 Ohms) @ 40 MHz @ f > 40 MHz (Derate) Composite Second Order (Vout = + 40 dBmV/ch., Worst Case) (Vout = + 44 dBmV/ch., Worst Case) Cross Modulation Distortion @ Ch 2 (Vout = + 40 dBmV/ch., FM = 55 MHz) (Vout = + 44 dBmV/ch., FM = 55 MHz) Composite Triple Beat (Vout = + 40 dBmV/ch., Worst Case) (Vout = + 44 dBmV/ch., Worst Case) Noise Figure DC Current (VDC = 24 V, TC = 30C) Symbol Min Typ Max Unit BW 40 -- 860 MHz Gp 19.3 20 19.8 20.2 20.3 21.5 dB S 0 .4 1.5 dB -- -- 0.3 1.0 dB 19 -- -- -- -- 0.006 dB dB/MHz IRL/ORL dBc 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT CSO128 CSO110 CSO77 -- -- -- -69 -70 -80 - 60 - 63 - 68 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT XMD128 XMD110 XMD77 -- -- -- -72 -67 -71 - 64 - 62 - 68 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT CTB128 CTB110 CTB77 -- -- -- -66 -63 -71 - 63 - 61 - 69 NF -- -- -- -- 5.0 5.8 6.2 7.0 6.0 -- -- 8.0 dB IDC 365 400 435 mA dBc dBc 50 MHz 550 MHz 750 MHz 860 MHz REV 4 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MHW8205 7.2-43 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MHW8205L High Output Power Doubler 870 MHz CATV Amplifier * Specified for 77, 110 and 128-Channel Performance 20.4 dB GAIN 870 MHz 128-CHANNEL CATV AMPLIFIER * Broadband Power Gain @ f = 870 MHz Gp = 20.4 dB (Typ) * Broadband Noise Figure NF = 7.7 dB (Typ) @ 870 MHz * 7 GHz fT Ion-Implanted Transistors * Composite Triple Beat @ 128-Channel Loading CTB = -66 dB (Typ) * Lower DC Current Consumption and Superior DC Stability with Temperature MAXIMUM RATINGS Rating Symbol Value Unit Vin +70 dBmV VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C RF Voltage Input (Single Tone) DC Supply Voltage CASE 714Y-03, STYLE 1 ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Power Gain 50 MHz 870 MHz Slope 40 - 870 MHz Gain Flatness (40 - 870 MHz, Peak to Valley) Return Loss -- Input/Output (Zo = 75 Ohms) @ 40 MHz @ f > 40 MHz (Derate) Composite Second Order (Vout = + 40 dBmV/ch., Worst Case) (Vout = + 44 dBmV/ch., Worst Case) Cross Modulation Distortion @ Ch 2 (Vout = + 40 dBmV/ch., FM = 55 MHz) (Vout = + 44 dBmV/ch., FM = 55 MHz) Composite Triple Beat (Vout = + 40 dBmV/ch., Worst Case) (Vout = + 44 dBmV/ch., Worst Case) Noise Figure Min Typ Max Unit BW Gp 40 -- 870 MHz 19 19.8 19.5 20.4 20 21.3 dB S 0.2 0.8 1.7 dB -- -- 0.5 1.0 dB 20 -- -- -- -- 0.007 dB dB/MHz IRL/ORL dBc 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT CSO128 CSO110 CSO77 -- -- -- -69 -70 -80 - 60 - 63 - 67 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT XMD128 XMD110 XMD77 -- -- -- -72 -65 -69 - 64 - 62 - 66 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT CTB128 CTB110 CTB77 -- -- -- -66 -63 -70 - 63 - 61 - 68 NF -- -- -- -- 5.0 5.8 6.2 7.7 6.2 -- -- 8.5 dB IDC 345 365 385 mA dBc dBc 50 MHz 550 MHz 750 MHz 870 MHz DC Current (VDC = 24 V, TC = -20C to +100C) MHW8205L 7.2-44 Symbol MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Output Mirror Power Doubler 860 MHz CATV Amplifier MHW8205R * Specified for 77, 110 and 128-Channel Performance * Broadband Power Gain @ f = 40 - 860 MHz Gp = 20.2 dB (Typ) 20.2 dB GAIN 860 MHz 128-CHANNEL CATV AMPLIFIER * Broadband Noise Figure NF = 7 dB (Typ) @ 860 MHz * All Gold Metallization * 7 GHz fT Ion-Implanted Transistors * Composite Triple Beat @ 128-Channel Loading CTB = -66 dB (Typ) MAXIMUM RATINGS Rating RF Voltage Input (Single Tone) Symbol Value Unit Vin +70 dBmV VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C DC Supply Voltage CASE 714Y-03, STYLE 2 ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Power Gain 50 MHz 860 MHz Slope 40 - 860 MHz Gain Flatness (40 - 860 MHz, Peak to Valley) Return Loss -- Input/Output (Zo = 75 Ohms) @ 40 MHz @ f > 40 MHz (Derate) Composite Second Order (Vout = + 40 dBmV/ch., Worst Case) (Vout = + 44 dBmV/ch., Worst Case) Cross Modulation Distortion @ Ch 2 (Vout = + 40 dBmV/ch., FM = 55 MHz) (Vout = + 44 dBmV/ch., FM = 55 MHz) Composite Triple Beat (Vout = + 40 dBmV/ch., Worst Case) (Vout = + 44 dBmV/ch., Worst Case) Noise Figure DC Current (VDC = 24 V, TC = 30C) Symbol Min Typ Max Unit BW 40 -- 860 MHz Gp 19.3 20 19.8 20.2 20.3 21.5 dB S 0 .4 1.5 dB -- -- 0.3 1.0 dB 19 -- -- -- -- 0.006 dB dB/MHz IRL/ORL dBc 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT CSO128 CSO110 CSO77 -- -- -- -69 -70 -80 - 60 - 63 - 68 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT XMD128 XMD110 XMD77 -- -- -- -72 -67 -71 - 64 - 62 - 68 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT CTB128 CTB110 CTB77 -- -- -- -66 -63 -71 - 63 - 61 - 69 NF -- -- -- -- 5.0 5.8 6.2 7.0 6.0 -- -- 8.0 dB IDC 365 400 435 mA dBc dBc 50 MHz 550 MHz 750 MHz 860 MHz MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MHW8205R 7.2-45 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN The RF Line MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 128-Channel (860 MHz) CATV Amplifier MHW8222B The MHW8222B is designed specifically for up to 860 MHz CATV systems as amplifiers in trunk, bridge and line extender applications. This amplifier features ion-implanted, arsenic emitter transistors, an all gold metallization system and offers improved ruggedness and distortion performance. * Specified for 77, 110, 128-Channel Performance * Broadband Power Gain -- @ f = 40 - 860 MHz Gp = 22.7 dB Typ @ 860 MHz * Broadband Noise Figure NF = 5.6 dB Typ @ 860 MHz * All Gold Metallization * Improved Distortion Performance 860 MHz 22 dB GAIN 128-CHANNEL CATV AMPLIFIER CASE 1302-01, STYLE 1 ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit VCC + 28 Vdc Vin + 70 dBmV Operating Case Temperature Range TC - 20 to +100 C Storage Temperature Range Tstg - 40 to +100 C DC Supply Voltage RF Input Voltage (Single Tone) ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = + 30C, 75 system unless otherwise noted) Characteristic Frequency Range Power Gain f = 50 MHz f = 860 MH Slope (f = 40 - 860 MHz) Gain Flatness (Peak To Valley) Input/Output Return Loss @ f = 40 MHz Derate Return Loss @ f > 40 MHz Composite Second Order (Vout = + 38 dBmV/ch; 128 Channels) (Vout = + 40 dBmV/ch; 110 Channels) (Vout = + 44 dBmV/ch; 77 Channels) (f = 40 - 860 MHz) Symbol Min Typ Max Unit BW 40 -- 860 MHz Gp 21.4 21.8 21.9 22.7 22.4 24 dB S 0.1 0.8 1.5 -- Gf -- 0.4 0.6 -- IRL/ORL 20 24 -- dB RLD -- -- 0.009 dB/MHz CSO128 CSO110 CSO77 -- -- -- - 68 - 64 - 65 - 60 - 61 - 62 dB REV 1 MHW8222B 7.2-46 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued Characteristic Symbol Min Typ Max Cross Modulation Distortion (Vout = + 38 dBmV/ch, 128-Channel @ Fm = 55.25 MHz) (Vout = + 40 dBmV/ch, 110-Channel @ Fm = 55.25 MHz) (Vout = + 44 dBmV/ch, 77-Channel @ Fm = 55.25 MHz) XMD128 XMD110 XMD77 -- -- -- - 65 - 63 - 59 - 63 - 60 - 56 Composite Triple Beat (Vout = + 38 dBmV/ch, 128-Channels, Worst Case) (Vout = + 40 dBmV/ch, 110-Channels, Worst Case) (Vout = + 44 dBmV/ch, 77-Channels, Worst Case) CTB128 CTB110 CTB77 -- -- -- - 66 - 64 - 65 - 64 - 61 - 62 NF -- -- -- 3.7 5 5.6 4.5 6.5 7 dB IDC 180 220 240 mA Noise Figure f = 50 MHz f = 750 MHz f = 860 MHz DC Current MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Unit dBc dBc MHW8222B 7.2-47 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 128-Channel (860 MHz) CATV Line Extender Amplifier MHW8242A * Specified for 128-Channel Performance * Broadband Power Gain @ f = 40 - 860 MHz Gp = 24 dB (Typ) * Broadband Noise Figure NF = 7.5 dB (Max) @ 860 MHz * Superior Gain, Return Loss and DC Current Stability with Temperature * All Gold Metallization * 7 GHz fT Ion-Implanted Transistors * Improved CTB Performance 24 dB GAIN 860 MHz 128-CHANNEL CATV AMPLIFIER MAXIMUM RATINGS Rating Symbol Value Unit Vin +55 dBmV VCC +28 Vdc Operating Case Temperature Range TC - 20 to +100 C Storage Temperature Range Tstg - 40 to +100 C RF Voltage Input (Single Tone) DC Supply Voltage CASE 714Y-03, STYLE 1 ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Power Gain 50 MHz 860 MHz Slope 40 - 860 MHz Gain Flatness (40 - 860 MHz, Peak To Valley) Symbol Min Typ Max Unit BW 40 -- 860 MHz Gp 23.2 24 24 25 24.8 26 dB S 0 0.8 1.8 dB -- -- 0.4 0.8 dB dB dB/MHz Return Loss -- Input/Output (Zo = 75 Ohms) @ 40 MHz @ f > 40 MHz (Derate) IRL/ORL 20 -- -- -- -- 0.007 Composite Second Order (Vout = + 38 dBmV/ch., Worst Case) (Vout = + 44 dBmV/ch., Worst Case) 128-Channel FLAT 77-Channel FLAT CSO128 CSO77 -- -- - 69 - 78 - 62 -- Cross Modulation Distortion @ Ch 2 (Vout = + 38 dBmV/ch., FM = 55 MHz) (Vout = + 44 dBmV/ch., FM = 55 MHz) 128-Channel FLAT 77-Channel FLAT XMD128 XMD77 -- -- - 65 - 58 - 62 -- Composite Triple Beat (Vout = + 38 dBmV/ch., Worst Case) (Vout = + 44 dBmV/ch., Worst Case) 128-Channel FLAT 77-Channel FLAT CTB128 CTB77 -- -- - 68 - 64 - 64 -- NF -- -- 4.8 5.8 5.5 7.5 dB IDC 280 318 350 mA Noise Figure DC Current dBc dBc dBc 50 MHz 860 MHz REV 2 MHW8242A 7.2-48 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 128-Channel (860 MHz) CATV Line Extender Amplifier MHW8272A * Specified for 128-Channel Performance * Broadband Power Gain @ f = 50 MHz Gp = 27.2 dB (Typ) 27 dB GAIN 860 MHz 128-CHANNEL CATV AMPLIFIER * Broadband Noise Figure NF = 6 dB (Typ) @ 860 MHz * All Gold Metallization * Improved CTB Performance over Previous Version MAXIMUM RATINGS Rating Symbol Value Unit Vin +55 dBmV VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C RF Voltage Input (Single Tone) DC Supply Voltage CASE 714Y-03, STYLE 1 ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Power Gain 50 MHz 860 MHz Slope 40 - 860 MHz Gain Flatness (40 - 860 MHz, Peak to Valley) Symbol Min Typ Max Unit BW 40 -- 860 MHz Gp 26.2 27 27.2 27.7 27.8 29.5 dB S 0 0.6 2 dB -- -- 0.4 0.8 dB 20 -- -- -- -- 0.007 dB dB/MHz -- -69 - 64 -- -65 - 62 -- -69 - 64 NF -- -- -- 6.0 5.5 7.0 dB IDC 280 310 350 mA Return Loss -- Input/Output (Zo = 75 Ohms) @ 40 MHz @ f > 40 MHz (Derate) IRL/ORL Composite Second Order (Vout = + 38 dBmV/ch., Worst Case) CSO128 128-Channel FLAT Cross Modulation Distortion @ Ch 2 (Vout = + 38 dBmV/ch., FM = 55 MHz) 128-Channel FLAT Composite Triple Beat (Vout = + 38 dBmV/ch., Worst Case) 128-Channel FLAT Noise Figure DC Current (VDC = 24 V, TC = 30C) dBc XMD128 dBc CTB128 50 MHz 860 MHz MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA dBc MHW8272A 7.2-49 MOTOROLA The RF Line 128-Channel (860 MHz) CATV Line Extender Amplifier MHW8292 * Specified for 128-Channel Performance * Broadband Power Gain @ f = 40 - 860 MHz Gp = 29 dB (Typ) 29 dB GAIN 860 MHz 128-CHANNEL CATV AMPLIFIER * Broadband Noise Figure NF = 6 dB (Typ) @ 860 MHz * Superior Gain, Return Loss and DC Current Stability with Temperature * All Gold Metallization * 7 GHz fT Ion-Implanted Transistors MAXIMUM RATINGS Rating Symbol Value Unit Vin +55 dBmV VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C RF Voltage Input (Single Tone) DC Supply Voltage CASE 714Y-03, STYLE 1 ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Power Gain 50 MHz 860 MHz Slope 40 - 860 MHz Gain Flatness (40 - 860 MHz, Peak to Valley) Symbol Min Typ Max Unit BW 40 -- 860 MHz Gp 28.2 29 29 -- 29.8 31.5 dB S 0 1.0 2.5 dB -- -- 0.4 0.8 dB 20 -- -- -- -- 0.007 dB dB/MHz -- -- - 56 -- -- - 60 -- -- - 60 NF -- -- -- 6.0 5.5 7.0 dB IDC 280 310 350 mA Return Loss -- Input/Output (Zo = 75 Ohms) @ 40 MHz @ f > 40 MHz (Derate) IRL/ORL Composite Second Order (Vout = + 38 dBmV/ch., Worst Case) CSO128 128-Channel FLAT Cross Modulation Distortion @ Ch 2 (Vout = + 38 dBmV/ch., FM = 55 MHz) 128-Channel FLAT Composite Triple Beat (Vout = + 38 dBmV/ch., Worst Case) 128-Channel FLAT Noise Figure DC Current (VDC = 24 V, TC = 30C) dBc XMD128 dBc CTB128 50 MHz 860 MHz dBc REV 1 MHW8292 7.2-50 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN SEMICONDUCTOR TECHNICAL DATA MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 152-Channel 1000 MHz CATV Amplifier MHW9182B * Specified for 152-Channel Performance * Broadband Power Gain @ f = 1000 MHz Gp = 19.4 dB (Typ) 19.4 dB GAIN 1000 MHz 152-CHANNEL CATV AMPLIFIER * Broadband Noise Figure NF = 6 dB (Typ) @ 1000 MHz * All Gold Metallization * Improved Ruggedness and Composite Second Order Distortion Performance MAXIMUM RATINGS Rating Symbol Value Unit Vin +70 dBmV VCC +28 Vdc Operating Case Temperature Range TC -20 to +100 C Storage Temperature Range Tstg -40 to +100 C RF Voltage Input (Single Tone) DC Supply Voltage CASE 714Y-03, STYLE 1 ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Characteristic Frequency Range Power Gain 50 MHz 1000 MHz Slope 40 - 1000 MHz Gain Flatness (40 - 1000 MHz, Peak to Valley) Return Loss -- Input/Output (Zo = 75 Ohms) @ 40 MHz @ f > 40 MHz (Derate) Symbol Min Typ Max Unit BW 40 -- 1000 MHz Gp 18 18.7 18.5 19.4 19 20.7 dB S 0.4 0.9 1.4 dB -- -- 0.4 0.8 dB 20 -- -- -- -- 0.006 dB dB/MHz IRL/ORL Composite Second Order (Vout = + 40 dBmV/ch., Worst Case) (Vout = + 38 dBmV/ch., Worst Case) 110-Channel FLAT 152-Channel FLAT CSO110 CSO152 -- -- 70 -69 - 63 - 63 Cross Modulation Distortion @ Ch 2 (Vout = + 40 dBmV/ch., FM = 55 MHz) (Vout = + 38 dBmV/ch., FM = 55 MHz) 110-Channel FLAT 152-Channel FLAT XMD110 XMD152 -- -- -66 -65 - 64 - 61 Composite Triple Beat (Vout = + 40 dBmV/ch., Worst Case) (Vout = + 38 dBmV/ch., Worst Case) 110-Channel FLAT 152-Channel FLAT CTB110 CTB152 -- -- -68 -64 - 66 - 61 NF -- -- -- -- 4.0 4.5 5.5 6.0 5.0 -- -- 7.5 dB IDC 180 210 240 mA Noise Figure DC Current (VDC = 24 V, TC = 30C) dBc dBc dBc 50 MHz 550 MHz 860 MHz 1000 MHz MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MHW9182B 7.2-51 MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 152-Channel (1000 MHz) CATV Line Extender Amplifier MHW9242A * Specified for 152-Channel Performance * Broadband Power Gain @ f = 40 - 1000 MHz Gp = 24 dB * Broadband Noise Figure NF = 8 dB (Max) @ 1000 MHz * Superior Gain, Return Loss and DC Current Stability with Temperature * All Gold Metallization * 7 GHz fT Ion-Implanted Transistors 24 dB GAIN 1000 MHz 152-CHANNEL CATV AMPLIFIER CASE 714Y-03, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit RF Voltage Input (Single Tone) Vin +55 dBmV VCC +28 Vdc Operating Case Temperature Range TC - 20 to +100 C Storage Temperature Range Tstg - 40 to +100 C DC Supply Voltage ELECTRICAL CHARACTERISTICS (VCC = 24 Vdc, TC = +30C, 75 system unless otherwise noted) Symbol Min Typ Max Unit BW 40 -- 1000 MHz Gp 23.2 24 -- -- 24.8 26 dB S 0 -- 2.5 dB -- -- -- 1.0 dB @ 40 MHz IRL/ORL 20 -- -- -- -- 0.01 dB dB/MHz Composite Second Order (Vout = + 38 dBmV/ch; Worst Case) (Vout = + 38 dBmV/ch; Worst Case) (Vout = + 40 dBmV/ch;Worst Case ) (Vout = + 44 dBmV/ch; Worst Case) 152-Channel FLAT 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT CSO152 CSO128 CSO110 CSO77 -- -- -- -- - 66 - 69 - 69 - 78 - 61 -- -- -- Cross Modulation Distortion @ Ch 2 (Vout = + 38 dBmV/ch., FM= 55 MHz) (Vout = + 38 dBmV/ch, FM = 55.25 MHz) (Vout = + 40 dBmV/ch, FM = 55.25 MHz) (Vout = + 44 dBmV/ch, FM = 55.25 MHz) 152-Channel FLAT 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT XMD152 XMD128 XMD110 XMD77 -- -- -- -- - 62 - 65 - 63 - 58 - 59 -- -- -- Characteristic Frequency Range Power Gain 50 MHz 1000 MHz Slope 40 - 1000 MHz Gain Flatness (40 - 1000 MHz, Peak-to-Valley) Return Loss -- Input/Output (Zo = 75 Ohms) @ f > 40 MHz (Derate) dBc dBc REV 1 MHW9242A 7.2-52 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued Characteristic Composite Triple Beat (Vout = + 38 dBmV/ch., Worst Case) (Vout = + 38 dBmV/ch, Worst Case) (Vout = + 40 dBmV/ch, Worst Case) (Vout = + 44 dBmV/ch, Worst Case) Noise Figure Symbol Min Typ Max Unit CTB152 CTB128 CTB110 CTB77 -- -- -- -- - 64 - 68 - 67 - 64 - 58 -- -- -- NF -- -- -- -- 4.8 5.5 5.8 -- 5.5 7.0 7.5 8.0 dB IDC 280 318 350 mA dBc 152-Channel FLAT 128-Channel FLAT 110-Channel FLAT 77-Channel FLAT f = 50 MHz f = 750 MHz f = 860 MHz f = 1000 MHz DC Current MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MHW9242A 7.2-53 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 7.2-54 Chapter Eight Tape and Reel Specifications Motorola offers the convenience of Tape and Reel packaging for our growing family of standard integrated circuit products. Reels are available to support the requirements of both first and second generation pick-and-place equipment. The packaging fully conforms to the latest EIA-481A specification. The antistatic embossed tape provides a secure cavity, sealed with a peel-back cover tape. Table of Contents Page Tape and Reel Specifications . . . . . . . . . . . . . . . . . . . 8.1-2 Embossed Tape and Reel Ordering Information . 8.1-4 Embossed Tape and Reel Data for Discretes . . . . 8.1-5 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Tape and Reel Specifications 8.1-1 RF and IF Tape and Reel Specifications Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the shipping container for various products and requires a minimum of handling. The antistatic/conductive tape provides a secure cavity for the product when sealed with the "peel-back" cover tape. * * * * * * SO-14, SO-16/16L, LQFP24, LQFP-32, LQFP-48, TSSOP-16/16EP, TSSOP-20/20HS in 16 mm Tape * QFP-52, SO-20L, SO-24L, SO-28L, TO-270, 250S in 24 mm Tape * NI-600 in 32 mm Tape * TO-272 in 44 mm Tape Two Reel Sizes Available (7 and 13) Used for Automatic Pick and Place Feed Systems Minimizes Product Handling EIA 481, -1, -2 BCC32EP++, Micro-8, PLD-1, PLD-1.5, SO-8, 200S, 200Z in 12 mm Tape Use the standard device title and add the required suffix as listed in the option table on the following page. Note that the individual reels have a finite number of devices depending on the type of product contained in the tape. Also note the minimum lot size is one full reel for each line item, and orders are required to be in increments of the single reel quantity. Micro-8, SO-8 (12 mm) SO-14, SO-16/16L (16 mm) SO-20L, SO-24L, SO-28L (24 mm) 200S, 200Z (12 mm) TSSOP-16/16EP (16 mm) PLD-1 PLD-1.5 (12 mm) (12 mm) LQFP-24, LQFP-32, LQFP-48 (16 mm) QFP-52 TSSOP-20/20HS (16 mm) (24 mm) PFP-16 (16 mm) 250S (24 mm) DIRECTION OF FEED Tape and Reel Specifications 8.1-2 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 250 (32 mm) TO-270 (24 mm) PIN 1 NI-600 TO-272 (44 mm) (32 mm) PIN 1 DIRECTION OF FEED MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Tape and Reel Specifications 8.1-3 RF and IF EMBOSSED TAPE AND REEL ORDERING INFORMATION Devices Per Reel and Minimum Order Quantity Device Suffix (13) 2,500 R2 (13) 2,500 R2 178 (7) 1,000 T1 8.0 0.1 (.315 .004) 178 (7) 1,000 T1 12.0 0.1 (.472 .004) 330 (13) 1,500 R2 12.0 0.1 (.472 .004) 330 (13) 2,000 R2 12.0 0.1 (.472 .004) 330 (13) 1,800 R2 16 12.0 0.1 (.472 .004) 330 (13) 2,000 R2 24 24.0 0.1 (.945 .004) 330 (13) 1,500 R2 Package Tape Width (mm) Pitch mm (inch) Reel Size mm (inch) BCC32EP++ 12 8.0 0.1 (.315 .004) 330 Micro-8 12 8.0 0.1 (.315 .003) 330 PLD-1 12 8.0 0.1 (.315 .004) PLD-1.5 12 PFP-16 16 LQFP-24 16 LQFP-32 16 LQFP-48 QFP-52 SO-8 12 8.0 0.1 (.315 .004) 330 (13) 2,500 R2 SO-14 16 8.0 0.1 (.315 .004) 330 (13) 2,500 R2 SO-16/16L 16 8.0 0.1 (.315 .004) 330 (13) 2,500 R2 SO-20L 24 12.0 0.1 (.472 .004) 330 (13) 1,000 R2 SO-24L 24 12.0 0.1 (.472 .004) 330 (13) 1,000 R2 SO-28L 24 12.0 0.1 (.472 .004) 330 (13) 1,000 R2 TSSOP-16/16EP 16 8.0 0.1 (.315 .004) 330 (13) 2,500 R2 TSSOP-20/20HS 16 8.0 0.1 (.315 .004) 330 (13) 2,500 R2 200S (458B) 12 12.0 0.1 (.471 .004) 178 (7) 500 R1 200Z (458C) 12 12.0 0.1 (.471 .004) 178 (7) 500 R1 250S (360C) 24 16.0 0.1 (.631 .004) 330 (13) 500 R1 250 (360B) 32 24.0 0.1 (.945 .004) 330 (13) 500 R1 NI-600 (465D) 32 32.0 0.1 (1.26 .004) 330 (13) 250 R3 TO-270 24 16.0 0.1 (.631 .004) 330 (13) 500 R1 TO-272 44 16.0 0.1 (.631 .004) 330 (13) 500 T1 Tape and Reel Specifications 8.1-4 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA EMBOSSED TAPE AND REEL DATA FOR DISCRETES CARRIER TAPE SPECIFICATIONS P0 K P2 D t 10 Pitches Cumulative Tolerance on Tape 0.2 mm ( 0.008) E Top Cover Tape A0 K0 B1 F W B0 See Note 1 P For Machine Reference Only Including Draft and RADII Concentric Around B0 D1 For Components 2.0 mm x 1.2 mm and Larger Center Lines of Cavity Embossment User Direction of Feed * Top Cover Tape Thickness (t1) 0.10 mm (.004) Max. Bar Code Label R Min Tape and Components Shall Pass Around Radius "R" Without Damage Embossed Carrier Bending Radius 10 100 mm (3.937) Maximum Component Rotation Typical Component Cavity Center Line Embossment 1 mm Max Tape 1 mm (.039) Max Typical Component Center Line 250 mm (9.843) Camber (Top View) Allowable Camber To Be 1 mm/100 mm Nonaccumulative Over 250 mm DIMENSIONS Tape Size B1 Max D D1 E1 F K P0 P2 R Min T Max W Max 12 mm 8.22 mm (.323) 11.5 mm Minn (.060) 1 7 00.11 mm 1.75 (.069 .004) 5.5 00.05 0 mm (.217 .002) 66.44 mm Max a (.252) 4 0 0.1 4.0 0 1 mm (.157 .004) 2 0 0.1 2.0 0 1 mm (.079 .002) 30 mm (1.18) 0 6 mm 0.6 (.024) 12 .30 30 mm (.470 .012) 16 mm 12.1 mm (.476) 11.5 + 0.1 0 1 mm - 0.0 ( 0 9 + .004 (.059 004 - 0.0) 7.5 0.10 mm (.295 .004) 7.9 mm Max (.311) 16.3 mm (.642) 24 mm 20.1 mm (.791) 11.5 0.1 mm (.453 .004) 11.9 mm Max (.468) 24.3 mm (.957) 32 mm 23.0 mm (.906) 1.5 mm Min (.059) 14.2 0.1 mm (.559 .004) -- 2.0 0.1 mm (.079 .004) 44 mm 35.0 mm (1.378) 2.0 mm Min (.079) 11.5 0.1 mm (.453 .004) 15.9 mm Max (.625) 2.0 0.15 mm (.079 .006) 32.2 mm (1.272) 50 mm (1.969) 50.4 mm (1.984) 44 .30 mm (1.732 .012) Metric dimensions govern -- English are in parentheses for reference only. NOTE 1: A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be within .05 mm min. to .50 mm max., NOTE 1: the component cannot rotate more than 10 within the determined cavity. NOTE 3: Pitch information is contained in the Embossed Tape and Reel Ordering Information on pg. 8.1-4. MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Tape and Reel Specifications 8.1-5 EMBOSSED TAPE AND REEL DATA FOR DISCRETES T Max Outside Dimension Measured at Edge 1.5 mm Min (.06) A 13.0 mm 0.5 mm (.512 .002) 20.2 mm Min (.795) 50 mm Min (1.969) Full Radius G Size A Max G 12 mm 330 mm (12.992) 12.4 mm + 2.0 mm, - 0.0 (.49 + .079, - 0.00) 18.4 mm (.72) 16 mm 360 mm (14.173) 16.4 mm + 2.0 mm, - 0.0 (.646 + .078, - 0.00) 22.4 mm (.882) 24 mm 360 mm (14.173) 24.4 mm + 2.0 mm, - 0.0 (.961 + .070, - 0.00) 30.4 mm (1.197) 32 mm 360 mm (14.163) 44 mm 330 mm (12.992) 32.4 mm + 2.0 mm, - 0.0 (1.276+ 0.79, - 0.00) 44.4 mm + 2.0 mm, - 0.0 (1.748+ 0.79, - 0.00) Inside Dimension Measured Near Hub T Max 0.6 mm (.024) 50.4 mm (1.984) Reel Dimensions Metric Dimensions Govern -- English are in parentheses for reference only Tape and Reel Specifications 8.1-6 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Overall LG Item 3.1.2 Kraft Paper Reel B Roll Pad A Item 3.1.1 Max Off Alignment E Container Tape, Blue Item 3.2 (Cathode) Item 3.3.5 Both Sides Tape, White Item 3.2 (Anode) Figure 1. Reel Packing D1 D2 0.250 Item 3.3.2 0.031 Item 3.3.5 Figure 2. Component Spacing Optional Design 1.188 3.5 Dia. Item 3.4 D C Figure 3. Reel Dimensions MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Tape and Reel Specifications 8.1-7 Tape and Reel Specifications 8.1-8 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Chapter Nine Packaging Information The packaging availability for each device type is indicated on the individual data sheets and in the Selector Guide. All of the outline dimensions for the packages are given in this section. Table of Contents Page Case Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9.1-2 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS 9.1-1 Case Dimensions A U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. M Q M 1 DIM A B C D E H J K M Q R S U 4 B R 2 S 3 D K STYLE 2: PIN 1. 2. 3. 4. J C H INCHES MIN MAX 0.960 0.990 0.370 0.390 0.229 0.281 0.215 0.235 0.085 0.105 0.150 0.108 0.004 0.006 0.395 0.405 40 _ 50 _ 0.113 0.130 0.245 0.255 0.790 0.810 0.720 0.730 E MILLIMETERS MIN MAX 24.39 25.14 9.40 9.90 5.82 7.13 5.47 5.96 2.16 2.66 3.81 4.57 0.11 0.15 10.04 10.28 40 _ 50 _ 2.88 3.30 6.23 6.47 20.07 20.57 18.29 18.54 SOURCE GATE SOURCE DRAIN SEATING PLANE CASE 211-07 ISSUE N (.380 FLANGE) A U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. M 1 M Q DIM A B C D E H J K M Q R U 4 R 2 B 3 D K J H C E SEATING PLANE INCHES MIN MAX 0.960 0.990 0.465 0.510 0.229 0.275 0.216 0.235 0.084 0.110 0.144 0.178 0.003 0.007 0.435 --- 45 _NOM 0.115 0.130 0.246 0.255 0.720 0.730 STYLE 2: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 24.39 25.14 11.82 12.95 5.82 6.98 5.49 5.96 2.14 2.79 3.66 4.52 0.08 0.17 11.05 --- 45 _NOM 2.93 3.30 6.25 6.47 18.29 18.54 SOURCE GATE SOURCE DRAIN CASE 211-11 ISSUE N (.500 FLANGE) CASE DIMENSIONS 9.1-2 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS (continued) 2 K H D 1 3 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. SEATING PLANE = GROUND AND IS CONNECTED TO PIN 1 AND 3. M DIM A C D H J K M A J C SEATING PLANE INCHES MIN MAX 0.271 0.286 0.112 0.136 0.215 0.235 0.055 0.065 0.003 0.007 0.435 --- 45_ REF STYLE 3: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 6.88 7.26 2.84 3.45 5.46 5.97 1.40 1.65 0.08 0.18 11.05 --- 45 _ REF SOURCE GATE SOURCE DRAIN CASE 249-06 ISSUE H (.280 PILL) -A- Q 2 PL 0.20 (0.008) G 0.51 (0.020) M T A T S M R -S- 1 2 3 4 W M D 4 PL T B M N L H F E C -T- M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION F TO CENTER OF LEADS. K 0.51 (0.020) A -B- M J M P 4 PL 0.51 (0.020) M T CASE 301AP-01 ISSUE B MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA SEATING PLANE DIM A B C D E F G H J K L N P Q R S W STYLE 1: PIN 1. 2. 3. 4. CASE: INCHES MIN MAX 1.760 1.780 1.370 1.390 0.245 0.265 0.017 0.023 0.080 0.100 0.086 BSC 1.650 BSC 1.290 BSC 0.266 0.280 0.125 0.165 0.990 BSC 0.390 BSC 0.008 0.013 0.118 0.132 0.535 0.555 0.445 0.465 0.090 BSC RF INPUT VDD1 VDD2 RF OUTPUT GROUND MILLIMETERS MIN MAX 44.70 45.21 34.80 35.31 6.22 6.73 0.43 0.58 2.03 2.54 2.18 BSC 41.91 BSC 32.77 BSC 6.76 7.11 3.18 4.19 25.15 BSC 9.91 BSC 0.20 0.33 3.00 3.35 13.59 14.10 11.30 11.81 2.29 BSC STYLE 2: PIN 1. 2. 3. 4. CASE: RF OUTPUT VDD2 VDD1 RF INPUT GROUND CASE DIMENSIONS 9.1-3 CASE DIMENSIONS (continued) 0.51 (0.020) M T A -A- G -B- M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION F TO CENTER OF LEADS. -S- R J 1 K 0.51 (0.020) M 2 3 W D 3 PL T B M N H Q 2 PL 0.20 (0.008) F M T S M A M E C -T- P SEATING PLANE 3 PL 0.51 (0.020) M T DIM A B C D E F G H J K N P Q R S W INCHES MIN MAX 1.760 1.780 1.370 1.390 0.245 0.265 0.017 0.023 0.080 0.100 0.086 BSC 1.650 BSC 1.290 BSC 0.266 0.280 0.125 0.165 0.390 BSC 0.008 0.013 0.118 0.132 0.535 0.555 0.445 0.465 0.090 BSC STYLE 1: PIN 1. 2. 3. CASE: MILLIMETERS MIN MAX 44.70 45.21 34.80 35.31 6.22 6.73 0.43 0.58 2.03 2.54 2.18 BSC 41.91 BSC 32.77 BSC 6.76 7.11 3.18 4.19 9.91 BSC 0.20 0.33 3.00 3.35 13.59 14.10 11.30 11.81 2.29 BSC RF INPUT VDD RF OUTPUT GROUND CASE 301AS-01 ISSUE A CASE DIMENSIONS 9.1-4 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS (continued) -A- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION F IS FROM THE BOTTOM OF HEATSINK TO THE TOP OF THE LEAD. 4. DIMENSION P TO BE MEASURED AS LEAD EXITS COVER. 5. FLANGE FLATNESS 0.038 (0.0015) MAXIMUM CONVEX, 0.063 (0.0025) MAXIMUM CONCAVE. 6. ADHESIVE MATERIAL SHALL BE INCLUDED IN THE DIMENSIONS LISTED. G 0.25 (0.010) B M T A M A R -S- 0.25 (0.010) 1 2 T A M M 3 4 Q 2 PL 0.13 (0.005) V M T S W N A H D 4 PL 0.25 (0.010) M T A M E C -T- SEATING PLANE J F M DIM A B C D E F G H J K N P Q R S V W INCHES MIN MAX 1.890 1.910 1.170 1.190 0.350 0.376 0.018 0.022 0.115 0.135 0.170 BSC 1.600 BSC 1.265 BSC 0.325 0.375 0.225 --- 1.165 BSC 0.010 REF 0.150 0.160 0.685 0.705 0.598 0.612 0.365 BSC 0.465 BSC STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 48.01 48.51 29.72 30.22 8.89 9.55 0.46 0.55 2.92 3.42 4.31 BSC 40.64 BSC 32.13 BSC 8.25 9.52 5.72 --- 29.59 BSC 0.25 REF 3.81 4.06 17.40 17.90 15.18 15.54 9.27 BSC 11.81 BSC RF IN V BIAS V SUPPLY RF OUT NOTE 3 P K 4 PL 0.25 (0.010) 4 PL M T VIEW A-A CASE 301AW-02 ISSUE B MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS 9.1-5 CASE DIMENSIONS (continued) A G B 0.51 (0.020) A B NOTES: 1. CONTROLLING DIMENSION: MILLIMETER. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ANSI Y14.5M, 1982. 3. DIMENSION F TO CENTER LINE OF LEADS. S T A M M R DIM A B C D E F G H J K L M N P Q R S W S 1 2 3 4 5 J 5X 2X W K Q 0.2 (0.008) M T S M A M M N L H 5X D 0.51 (0.020) M T B M STYLE 1: PIN 5. 6. 7. 8. 9. CASE: T C 5X P E SEATING PLANE 0.51 (0.020) M T B MILLIMETERS MIN MAX 44.7 45.21 34.8 35.31 6.22 6.73 0.43 0.58 2.03 2.54 2.18 BSC 41.91 BSC 32.77 BSC 6.76 7.11 3.18 4.19 25.15 BSC 7.37 BSC 9.91 BSC 0.2 0.33 3 3.35 13.59 14.1 11.3 11.81 2.29 BSC INCHES MIN MAX 1.760 1.780 1.370 1.390 0.245 0.265 0.017 0.023 0.080 0.100 0.086 BSC 1.650 BSC 1.290 BSC 0.266 0.280 0.125 0.165 0.990 BSC 0.290 BSC 0.390 BSC 0.008 0.013 0.118 0.132 0.535 0.555 0.445 0.465 0.090 BSC RF INPUT VDD1 VDD2 VDD3 RF OUTPUT GROUND F M CASE 301AY-01 ISSUE O NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. M D K DIM A C D F H J K M 4 1 3 2 F J INCHES MIN MAX 0.200 0.220 0.095 0.130 0.055 0.065 0.025 0.035 0.040 0.050 0.003 0.007 0.435 --- 45 _REF STYLE 2: PIN 1. 2. 3. 4. A C MILLIMETERS MIN MAX 5.08 5.59 2.41 3.30 1.40 1.65 0.64 0.89 1.02 1.27 0.08 0.18 11.05 --- 45 _REF SOURCE GATE SOURCE DRAIN H CASE 305A-01 ISSUE A (.204" PILL) CASE DIMENSIONS 9.1-6 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS (continued) 0.112 2.85 A L 0.079 2 G 3 0.033 0.85 4 B S 1 2 0.075 1.9 F 0.041 1.05 0.071 1.8 D 0.108 2.75 0.033 0.85 H J C R 0.047 1.2 K 0.031 0.8 0.033 0.85 SOT-143 FOOTPRINT inches mm NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D F G H J K L R S MILLIMETERS INCHES MIN MAX MIN MAX 2.80 3.04 0.110 0.120 1.20 1.39 0.047 0.055 0.84 1.14 0.033 0.045 0.39 0.50 0.015 0.020 0.79 0.93 0.031 0.037 1.78 2.03 0.070 0.080 0.013 0.10 0.0005 0.004 0.08 0.15 0.003 0.006 0.46 0.60 0.018 0.024 0.445 0.60 0.0175 0.024 0.72 0.83 0.028 0.033 2.11 2.48 0.083 0.098 STYLE 1: PIN 1. 2. 3. 4. COLLECTOR EMITTER EMITTER BASE CASE 318A-05 ISSUE R (SOT-143) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS 9.1-7 CASE DIMENSIONS (continued) 2X 2X e1 D 4 3 EE EE A A2 B (B1) e4 0.15 C E/2 E1/2 PIN 1 IDENTIFIER IN THIS ZONE D E 0.20 C A1 1 B 2 E1 0.15 C B 0.10 C 3X 2X b 0.10 SEATING PLANE e2 e3 4X A C A-B D M VIEW C 4X q1 B SECTION B-B (SEE NOTE 7) GAUGE PLANE CCCC EEEE EEEE CCCC SEATING PLANE c c1 b b1 4X NOTES: 1. DIMENSIONS ARE IN MILLIMETERS. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION D DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15mm PER END. DIMENSION E1 DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.15mm PER SIDE. 4. DIMENSIONS D AND E1 ARE DETERMINED AT THE OUTMOST EXTREMES OF THE PLASTIC BODY EXCLUSIVE OF MOLD FLASH, TIE BAR BURRS, GATE BURRS AND INTERLEAD FLASH, BUT INCLUDING ANY MISMATCH BETWEEN THE TOP AND BOTTOM OF PLASTIC BODY. 5. DATUMS A, B AND D TO BE DETERMINED 0.10mm FROM THE LEAD TIP. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. THESE DIMENSIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.08mm AND 0.15mm FROM THE LEAD TIP. q1 q C L BASE METAL (L1) WITH PLATING VIEW C L2 DIM A A1 A2 b b1 B B1 c c1 D E E1 e1 e2 e3 e4 L L1 L2 q q1 MILLIMETERS MIN MAX --- 1.10 0.00 0.10 0.80 1.00 0.25 0.40 0.25 0.35 0.55 0.70 0.55 0.65 0.10 0.25 0.08 0.20 2.00 BSC 2.10 BSC 1.25 BSC 1.30 BSC 0.65 BSC 1.15 BSC 0.50 BSC 0.26 0.46 0.425 REF 0.15 BSC 0_ 8_ 4_ 10 _ CASE 318M-01 ISSUE O (SOT-343) CASE DIMENSIONS 9.1-8 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS (continued) Q 2 PL -AL IDENTIFICATION NOTCH 6 0.15 (0.006) 5 M T A M N M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 -N1 2 3 K F D 2 PL 0.38 (0.015) M B 0.38 (0.015) T A M N M T A M M N INCHES MIN MAX 0.965 0.985 0.355 0.375 0.230 0.260 0.115 0.125 0.102 0.114 0.075 0.085 0.160 0.170 0.004 0.006 0.090 0.110 0.725 BSC 0.225 0.241 0.125 0.135 DIM A B C D E F H J K L N Q M MILLIMETER MIN MAX 24.52 25.01 9.02 9.52 5.85 6.60 2.93 3.17 2.59 2.90 1.91 2.15 4.07 4.31 0.11 0.15 2.29 2.79 18.42 BSC 5.72 6.12 3.18 3.42 J C H E -T- SEATING PLANE CASE 319-07 ISSUE M (CS-12) IDENTIFICATION NOTCH 5 4 STYLE 3: PIN 1. 2. 3. 4. 5. 6. SOURCE (COMMON) GATE (INPUT) SOURCE (COMMON) SOURCE (COMMON) DRAIN (OUTPUT) SOURCE (COMMON) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. K B 1 2 DIM A B C D F H J K 3 F D C H EMITTER (COMMON) BASE (INPUT) EMITTER (COMMON) EMITTER (COMMON) COLLECTOR (OUTPUT) EMITTER (COMMON) A 6 J STYLE 2: PIN 1. 2. 3. 4. 5. 6. INCHES MIN MAX 0.355 0.365 0.225 0.235 0.110 0.125 0.115 0.125 0.075 0.085 0.035 0.045 0.004 0.006 0.090 0.110 MILLIMETERS MIN MAX 9.02 9.27 5.72 5.96 2.80 3.17 2.93 3.17 1.91 2.15 0.89 1.14 0.11 0.15 2.29 2.79 SEATING PLANE STYLE 2: PIN 1. 2. 3. 4. 5. 6. EMITTER BASE EMITTER EMITTER COLLECTOR EMITTER CASE 319A-02 ISSUE B MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS 9.1-9 CASE DIMENSIONS (continued) -A- Q L 2 PL 0.13 (0.005) D T A M B M DIM A B C D E F G H J K L N P Q K 2 1 M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3 -B- P K 4 F G J N STYLE 2: PIN 1. 2. 3. 4. E C H INCHES MIN MAX 0.965 0.985 0.390 0.410 0.250 0.290 0.190 0.210 0.095 0.115 0.215 0.235 0.725 BSC 0.155 0.175 0.004 0.006 0.195 0.205 0.740 0.770 0.415 0.425 0.390 0.400 0.120 0.135 -T- MILLIMETERS MIN MAX 24.51 25.02 9.91 10.41 6.73 7.36 4.83 5.33 2.42 2.92 5.47 5.96 18.42 BSC 3.94 4.44 0.10 0.15 4.95 5.21 18.80 19.55 10.54 10.80 9.91 10.16 3.05 3.42 SOURCE DRAIN SOURCE GATE SEATING PLANE CASE 333-04 ISSUE E L N IDENTIFICATION NOTCH 4 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 6 -B- 1 K 2 3 Q 2 PL D 4 PL F 2 PL 0.13 (0.005) M T A 2 PL J C H E -T- SEATING PLANE M B M DIM A B C D E F H J K L N Q STYLE 1: PIN 1. 2. 3. 4. 5. 6. INCHES MIN MAX 0.965 0.985 0.390 0.410 0.250 0.290 0.075 0.090 0.095 0.115 0.110 0.130 0.155 0.175 0.004 0.006 0.090 0.116 0.725 BSC 0.415 0.435 0.120 0.135 BASE EMITTER BASE BASE COLLECTOR BASE MILLIMETERS MIN MAX 24.52 25.01 9.91 10.41 6.35 7.36 1.91 2.28 2.42 2.92 2.80 3.30 3.94 4.44 0.11 0.15 2.29 2.94 18.41 BSC 10.55 11.04 3.05 3.42 STYLE 2: PIN 1. 2. 3. 4. 5. 6. EMITTER BASE EMITTER EMITTER COLLECTOR EMITTER -A- CASE 333A-02 ISSUE C (MAAC PAC) CASE DIMENSIONS 9.1-10 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS (continued) -A- G H Q 1 2 PL 0.25 (0.010) T A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. M DIM A B C D E F G H K N Q U -B- 3 K 2 D F N E INCHES MIN MAX 0.790 0.810 0.253 0.267 0.144 0.160 0.093 0.107 0.074 0.080 0.002 0.006 0.560 BSC 0.043 0.057 0.346 0.394 0.243 0.257 0.125 0.135 0.117 0.128 MILLIMETERS MIN MAX 20.07 20.57 6.43 6.78 3.66 4.06 2.37 2.71 1.88 2.03 0.06 0.15 14.22 BSC 1.10 1.44 8.79 10.10 6.18 6.52 3.18 3.42 2.98 3.25 C U -T- STYLE 1: PIN 1. COLLECTOR 2. EMITTER 3. BASE SEATING PLANE CASE 336E-02 ISSUE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. -A- U M Q 2 PL 0.76 (0.030) M T A M 1 R -B- 3 K 2 PL 2 D J H N E B M DIM A B C D E H J K M N Q R U INCHES MIN MAX 0.890 0.910 0.375 0.395 0.150 0.165 0.145 0.155 0.055 0.065 0.120 0.130 0.003 0.006 0.185 0.215 45_REF 0.490 0.510 0.115 0.125 0.395 0.405 0.700 BSC MILLIMETERS MIN MAX 22.61 23.11 9.53 10.03 3.81 4.19 3.69 3.93 1.40 1.65 3.05 3.30 0.08 0.15 4.70 5.46 45_REF 12.45 12.95 2.93 3.17 10.04 10.28 17.78 BSC STYLE 1: PIN 1. COLLECTOR 2. EMITTER 3. BASE C -T- SEATING PLANE CASE 355C-02 ISSUE C MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS 9.1-11 CASE DIMENSIONS (continued) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. -A- U M Q 2 PL 0.76 (0.030) M T A M B M 1 DIM A B C D E H J K M N Q R U -B- R 3 2 K 2 PL D E N J C H INCHES MIN MAX 0.890 0.910 0.375 0.395 0.190 0.210 0.145 0.155 0.055 0.065 0.120 0.130 0.003 0.006 0.185 0.215 45_REF 0.490 0.510 0.115 0.125 0.395 0.405 0.700 BSC MILLIMETERS MIN MAX 22.61 23.11 9.53 10.03 4.83 5.33 3.69 3.93 1.40 1.65 3.05 3.30 0.08 0.15 4.70 5.46 45_REF 12.45 12.95 2.93 3.17 10.04 10.28 17.78 BSC -T- STYLE 1: PIN 1. COLLECTOR 2. EMITTER 3. BASE SEATING PLANE CASE 355E-01 ISSUE B -A- RADIUS Q 2 PL U M 0.51 (0.020) M T A M 1 K R -B- 2 D H N M DIM A B C D E H J K M N Q R U 3 J B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E C INCHES MIN MAX 0.990 1.010 0.375 0.395 0.145 0.175 0.195 0.205 0.055 0.065 0.117 0.133 0.003 0.006 0.580 0.620 45 _REF 0.590 0.610 0.055 0.065 0.395 0.405 0.800 BSC MILLIMETERS MIN MAX 25.15 25.65 9.53 10.03 3.68 4.45 4.95 5.21 1.40 1.65 2.97 3.38 0.08 0.15 14.73 15.75 45 _REF 14.99 15.49 1.40 1.65 10.03 10.29 20.32 BSC STYLE 1: PIN 1. COLLECTOR 2. EMITTER 3. BASE -T- SEATING PLANE CASE 355J-02 ISSUE A CASE DIMENSIONS 9.1-12 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS (continued) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030" AWAY FROM EDGE OF FLANGE. G 1 -B- DIM A B C D E F G H K N Q 3 Q 2 PL 2 K 0.25 (0.010) D T A M B M C F N E H M -T- SEATING PLANE INCHES MIN MAX 0.790 0.810 0.220 0.240 0.125 0.175 0.205 0.225 0.050 0.070 0.004 0.006 0.562 BSC 0.077 0.087 0.215 0.255 0.350 0.370 0.120 0.140 MILLIMETERS MIN MAX 20.07 20.57 5.59 6.09 3.18 4.45 5.21 5.71 1.27 1.77 0.11 0.15 14.27 BSC 1.96 2.21 5.47 6.47 8.89 9.39 3.05 3.55 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE -A- CASE 360B-03 ISSUE D 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. -B- 2 K E D N F H 3 C -T- SEATING PLANE -A- DIM A B C D E F H K N INCHES MIN MAX 0.370 0.390 0.220 0.240 0.105 0.155 0.205 0.225 0.035 0.045 0.004 0.006 0.057 0.067 0.085 0.115 0.350 0.370 MILLIMETERS MIN MAX 9.40 9.91 5.59 6.09 2.67 3.94 5.21 5.71 0.89 1.14 0.11 0.15 1.45 1.70 2.16 2.92 8.89 9.39 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 360C-03 ISSUE B MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS 9.1-13 CASE DIMENSIONS (continued) -A- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. U 1 K -B- V DIM A B C D E H J K N Q U V N 3 Q 2 4 PL 0.25 (0.010) M T A B M M D H N C MILLIMETERS MIN MAX 37.85 38.35 25.15 25.65 8.38 9.27 12.45 12.95 4.95 5.21 1.14 1.39 0.10 0.15 10.80 12.70 22.87 23.11 3.05 3.30 31.75 BSC 19.05 BSC STYLE 2: PIN 1. DRAIN 2. GATE 3. SOURCE E J -T- INCHES MIN MAX 1.490 1.510 0.990 1.010 0.330 0.365 0.490 0.510 0.195 0.205 0.045 0.055 0.004 0.006 0.425 0.500 0.890 0.910 0.120 0.130 1.250 BSC 0.750 BSC SEATING PLANE CASE 368-03 ISSUE C (HOG PAC) U G 1 Q RADIUS 2 PL 0.25 (0.010) M T A M DIM A B C D E G H J K N Q R U -B- 5 3 4 D E B 2 R K M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. N J H -T- -A- SEATING PLANE C INCHES MIN MAX 1.330 1.350 0.370 0.410 0.190 0.230 0.215 0.235 0.050 0.070 0.430 0.440 0.102 0.112 0.004 0.006 0.185 0.215 0.845 0.875 0.060 0.070 0.390 0.410 1.100 BSC STYLE 2: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 33.79 34.29 9.40 10.41 4.83 5.84 5.47 5.96 1.27 1.77 10.92 11.18 2.59 2.84 0.11 0.15 4.83 5.33 21.46 22.23 1.52 1.78 9.91 10.41 27.94 BSC DRAIN DRAIN GATE GATE SOURCE CASE 375-04 ISSUE D CASE DIMENSIONS 9.1-14 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS (continued) Q 2 PL G L 0.25 (0.010) 1 M 2 DIM A B C D E F G H K L N Q R -B- R K T B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 5 3 4 D N E F STYLE 1: PIN 1. 2. 3. 4. 5. H -T- A INCHES MIN MAX 1.330 1.350 0.375 0.395 0.180 0.205 0.320 0.340 0.060 0.070 0.004 0.006 1.100 BSC 0.082 0.097 0.580 0.620 0.435 BSC 0.845 0.875 0.118 0.130 0.390 0.410 SEATING PLANE C MILLIMETERS MIN MAX 33.79 34.29 9.52 10.03 4.57 5.21 8.13 8.64 1.52 1.77 0.11 0.15 27.94 BSC 2.08 2.46 14.73 15.75 11.05 BSC 21.46 22.23 3.00 3.30 9.91 10.41 COLLECTOR COLLECTOR BASE BASE EMITTER CASE 375A-01 ISSUE O Q 2 PL G 0.25 (0.010) M T B M L 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 2 R -B- 5 3 K DIM A B C D E F G H K L N Q R 4 D 4 PL E N F -T- A H C SEATING PLANE INCHES MIN MAX 1.330 1.350 0.375 0.395 0.180 0.210 0.320 0.340 0.060 0.070 0.004 0.006 1.100 BSC 0.093 0.108 0.085 0.115 0.425 BSC 0.845 0.875 0.118 0.130 0.390 0.410 STYLE 2: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 33.79 34.29 9.52 10.03 4.57 5.33 8.13 8.64 1.52 1.77 0.11 0.15 27.94 BSC 2.36 2.74 2.16 2.92 10.80 BSC 21.46 22.23 3.00 3.30 9.91 10.41 DRAIN DRAIN GATE GATE SOURCE CASE 375B-02 ISSUE A MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS 9.1-15 CASE DIMENSIONS (continued) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A G L Q 2 PL 0.25 (0.010) 1 M T B M DIM A B C D E F G H K L M N Q R S 2 S R -B- 3 4 D K 4 PL N M H C SEATING PLANE -T- E F INCHES MIN MAX 1.610 1.630 0.390 0.410 0.150 0.180 0.450 0.470 0.060 0.068 0.003 0.006 1.400 BSC 0.079 0.089 0.117 0.137 0.540 BSC 1.225 1.235 1.219 1.241 0.120 0.130 0.350 0.370 0.360 0.380 STYLE 2: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 40.89 41.40 9.91 10.41 3.81 4.57 11.43 11.94 1.52 1.73 0.08 0.15 35.56 BSC 2.01 2.26 2.97 3.48 13.72 BSC 31.12 31.37 30.96 31.52 3.05 3.30 8.89 9.40 9.14 9.65 DRAIN DRAIN GATE GATE SOURCE CASE 375D-01 ISSUE O A RADIUS Q 4 PL L 1 2 S R DIM A B C D E F H K L M N Q R S -B- 4 3 D K 4 PL N M F C -T- H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E INCHES MIN MAX 1.325 1.335 0.390 0.410 0.150 0.180 0.450 0.470 0.060 0.068 0.003 0.006 0.079 0.089 0.117 0.137 0.540 BSC 1.225 1.235 1.219 1.241 0.030 BSC 0.350 0.370 0.360 0.380 STYLE 2: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 33.66 33.91 9.91 10.41 3.81 4.57 11.43 11.94 1.52 1.73 0.08 0.15 2.01 2.26 2.97 3.48 13.72 BSC 31.12 31.37 30.96 31.52 0.76 BSC 8.89 9.40 9.14 9.65 DRAIN DRAIN GATE GATE SOURCE CASE 375E-01 ISSUE O CASE DIMENSIONS 9.1-16 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS (continued) L Q 2 PL D 0.25 (0.010) R K 1 2 3 4 M T B M DIM A B C D E F G H K L N Q R -B- 4 PL G F N C H -T- A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030" AWAY FROM FLANGE. SEATING PLANE E INCHES MIN MAX 1.135 1.145 0.225 0.235 0.148 0.178 0.210 0.220 0.055 0.065 0.004 0.006 0.900 BSC 0.076 0.086 0.215 0.255 0.260 BSC 0.638 0.650 0.130 BSC 0.225 0.235 STYLE 2: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 28.80 29.10 5.72 5.97 3.76 4.52 5.33 5.59 1.40 1.65 0.110 0.150 22.86 BSC 1.93 2.18 5.46 6.28 6.60 BSC 16.20 16.50 3.30 BSC 5.72 5.97 DRAIN DRAIN GATE GATE SOURCE CASE 375F-02 ISSUE A G L 1 Q 2X 2 0.010 R M T B M DIM A B C D E F G H K L N Q R B 5 4X K 3 4 B D N E H A F C NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. T SEATING PLANE INCHES MIN MAX 1.330 1.350 0.375 0.395 0.180 0.210 0.320 0.340 0.060 0.070 0.004 0.006 1.100 BSC 0.093 0.108 0.135 0.165 0.425 BSC 0.845 0.875 0.118 0.130 0.390 0.410 STYLE 2: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 33.78 34.29 9.52 10.03 4.57 5.33 8.13 8.64 1.52 1.78 0.1 0.15 27.94 BSC 2.36 2.74 3.43 4.19 10.8 BSC 21.46 22.22 3 3.3 9.91 10.41 DRAIN DRAIN GATE GATE SOURCE CASE 375G-03 ISSUE B MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS 9.1-17 CASE DIMENSIONS (continued) NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. L 1 2 R B 3 5 4 4X K DIM A B C D E F H K L N R D N C E H A T F INCHES MIN MAX .880 .900 .375 .395 .180 .210 .320 .340 .060 .070 .004 .006 .093 .108 .085 .115 .425 BSC .845 .875 .390 .410 STYLE 2: PIN 1. 2. 3. 4. 5. SEATING PLANE MILLIMETERS MIN MAX 22.35 22.86 9.52 10.03 4.57 5.33 8.13 8.64 1.52 1.78 0.1 0.15 2.36 2.74 2.16 2.92 10.8 BSC 21.46 22.22 9.91 10.41 DRAIN DRAIN GATE GATE SOURCE CASE 375H-01 ISSUE O Q G 2 PL 0.25 (0.010) M T A B M M -B- R K D 2 PL 0.25 (0.010) H E N F M M B M T A M 2 PL 0.25 (0.010) -T- -A- T A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H K N Q R INCHES MIN MAX 0.890 0.910 0.370 0.400 0.145 0.160 0.140 0.160 0.055 0.065 0.003 0.006 0.650 BSC 0.110 0.130 0.180 0.220 0.390 0.410 0.115 0.135 0.390 0.140 MILLIMETERS MIN MAX 22.61 23.11 9.40 10.16 3.69 4.06 3.56 4.06 1.40 1.65 0.08 0.15 16.51 BSC 2.80 3.30 4.57 5.59 9.91 10.41 2.93 3.42 9.91 10.41 STYLE 1: PIN 1. COLLECTOR 2. EMITTER 3. BASE SEATING PLANE C CASE 376B-02 ISSUE B CASE DIMENSIONS 9.1-18 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS (continued) -A- U 0.51 (0.020) 1 2 3 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. Q 2 PL M T A M B M DIM A B C D E G H J K N Q U -B- 5 K G D J N E STYLE 1: PIN 1. 2. 3. 4. 5. C H -T- INCHES MIN MAX 0.739 0.750 0.240 0.260 0.165 0.198 0.055 0.065 0.055 0.070 0.110 0.130 0.079 0.091 0.003 0.005 0.180 0.220 0.315 0.330 0.125 0.135 0.560 BSC SEATING PLANE MILLIMETERS MIN MAX 18.77 19.05 6.10 6.60 4.19 5.03 1.40 1.65 1.40 1.78 2.79 3.30 2.01 2.31 0.08 0.13 4.57 5.59 8.00 8.38 3.18 3.42 14.22 BSC BASE BASE COLLECTOR COLLECTOR EMITTER CASE 395B-01 ISSUE A -A- U Q 2 PL 1 0.51 (0.020) M T A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E H J K N Q U -B- 3 K 2 D N STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER E J H INCHES MIN MAX 0.739 0.750 0.240 0.260 0.165 0.198 0.215 0.225 0.055 0.070 0.079 0.091 0.004 0.006 0.210 0.240 0.315 0.330 0.125 0.135 0.560 BSC MILLIMETERS MIN MAX 18.77 19.05 6.10 6.60 4.19 5.03 5.46 5.72 1.40 1.78 2.01 2.31 0.10 0.15 5.33 6.10 8.00 8.38 3.18 3.42 14.23 BSC STYLE 2: PIN 1. EMITTER 2. COLLECTOR 3. BASE C -T- SEATING PLANE CASE 395C-01 ISSUE A MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS 9.1-19 CASE DIMENSIONS (continued) Q -A- U 1 2 3 4 2 PL 0.51 (0.020) M T A M B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. M DIM A B C D E G H J K N Q U -B- 5 K D G INCHES MIN MAX 0.739 0.750 0.240 0.260 0.165 0.198 0.055 0.065 0.055 0.070 0.110 0.130 0.079 0.091 0.003 0.005 0.120 0.150 0.315 0.330 0.125 0.135 0.560 BSC STYLE 1: PIN 1. 2. 3. 4. 5. N J MILLIMETERS MIN MAX 18.77 19.05 6.10 6.60 4.19 5.03 1.40 1.65 1.40 1.78 2.79 3.30 2.01 2.31 0.08 0.13 3.05 3.81 8.00 8.38 3.18 3.42 14.23 BSC BASE BASE COLLECTOR COLLECTOR EMITTER C H E -T- SEATING PLANE CASE 395E-01 ISSUE O -A- U 1 Q 0.025 (0.010) 2 M T A 5 K 4 D G J N E C -T- H B M DIM A B C D E G H J K N Q U -B- 3 M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE STYLE 1: PIN 1. 2. 3. 4. 5. INCHES MIN MAX 1.094 1.110 0.457 0.465 0.165 0.182 0.121 0.131 0.055 0.065 0.177 0.185 0.081 0.091 0.002 0.004 0.142 0.163 0.510 0.520 0.125 0.135 0.844 BSC MILLIMETERS MIN MAX 27.79 28.19 11.61 11.81 4.25 4.62 3.08 3.32 1.40 1.65 4.50 4.69 2.06 2.31 0.06 0.10 3.60 4.14 12.95 13.21 3.18 3.42 21.44 BSC COLLECTOR COLLECTOR BASE BASE EMITTER CASE 398-03 ISSUE C CASE DIMENSIONS 9.1-20 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS (continued) -A- U Q 2 PL G 0.51 (0.020) 1 2 3 4 K M T A -B- 5 D 4 PL 0.51 (0.020) N J T A M M B M E C H -T- SEATING PLANE M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E G H J K N Q U INCHES MIN MAX 0.965 0.985 0.245 0.265 0.165 0.185 0.050 0.070 0.070 0.080 0.254 BSC 0.095 0.105 0.003 0.006 0.625 0.675 0.495 0.520 0.120 0.140 0.725 BSC STYLE 1: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 24.52 25.01 6.23 6.73 4.20 4.69 1.27 1.77 1.78 2.03 6.45 BSC 2.42 2.66 0.08 0.15 15.88 17.14 12.58 13.20 3.05 3.55 18.42 BSC DRAIN DRAIN GATE GATE SOURCE CASE 412-01 ISSUE O W T W W 0 1 10 2 9 3 8 4 7 5 6 S R Q P W V 2 PL N B D U 10 PL 0.020 M A B C E G F H SEATING PLANE J J K A L NOTES: 1. DIMENSIONS ARE IN INCHES. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ANSI Y14.5M, 1994. DIM C D E F G H J K L N P Q R S T U V W STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. INCHES MIN MAX 0.495 0.505 0.035 0.045 0.474 REF 0.186 0.196 0.033 REF 0.008 REF 0.050 0.060 0.100 REF 0.400 REF 0.050 REF 0.150 REF 0.250 REF 0.350 REF 0.450 REF 0.495 0.505 0.250 REF 0.025 0.035 --- 0.005 GROUND GROUND R.F. IN GROUND GROUND GROUND GROUND R.F. OUT GROUND +VDC CASE 438F-01 ISSUE O MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS 9.1-21 CASE DIMENSIONS (continued) -A- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. U N R DIM A B C D E G H J K N Q R U -B- Q 1 2 3 4 5 K D G 5 PL 0.25 (0.010) T A M B M M STYLE 1: PIN 1. 2. 3. 4. 5. C -T- E H J INCHES MIN MAX 1.740 1.760 0.550 0.570 0.405 0.445 0.018 0.022 0.085 0.095 0.200 BSC 0.120 BSC 0.009 0.011 0.180 0.220 1.045 1.075 0.145 0.155 0.455 0.465 1.490 1.510 RF INPUT GROUND RESISTOR-GROUND VCC RF OUTPUT MILLIMETERS MIN MAX 44.20 44.70 13.97 14.49 10.29 11.30 0.46 0.55 2.16 2.41 5.08 BSC 3.05 BSC 0.23 0.28 4.57 5.59 26.54 27.30 3.68 3.94 11.56 11.81 37.85 38.35 STYLE 2: PIN 1. 2. 3. 4. 5. RF INPUT GROUND VCC1 VCC2 RF OUTPUT 5 PL 0.38 (0.015) M T A B M M CASE 448-02 ISSUE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030" AWAY FROM FLANGE. G 1 -B- R 3 2 Q K D N H 2 PL 0.25 (0.010) M T A F E C -T- SEATING PLANE -A- M B M DIM A B C D E F G H K N Q R INCHES MIN MAX 0.995 1.005 0.380 0.390 0.156 0.191 0.455 0.465 0.060 0.075 0.004 0.006 0.800 BSC 0.078 0.090 0.117 0.137 0.595 0.605 0.120 0.130 0.395 0.410 MILLIMETERS MIN MAX 25.27 25.53 9.65 9.91 3.96 4.85 11.56 11.81 1.52 1.91 0.10 0.15 20.32 BSC 1.98 2.29 2.97 3.48 15.11 15.37 3.05 3.30 10.03 10.41 STYLE 1: PIN 1. COLLECTOR 2. BASE 3. EMITTER CASE 451-06 ISSUE F CASE DIMENSIONS 9.1-22 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS (continued) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030" AWAY FROM FLANGE. 1 -B- K DIM A B C D E F H K N 2 D N H F E C -A- -T- SEATING PLANE 3 INCHES MIN MAX 0.615 0.625 0.395 0.410 0.156 0.191 0.455 0.465 0.060 0.075 0.004 0.006 0.078 0.090 0.117 0.137 0.595 0.605 MILLIMETERS MIN MAX 15.62 15.88 10.03 10.41 3.96 4.85 11.56 11.81 1.52 1.91 0.10 0.15 1.98 2.29 2.97 3.48 15.11 15.37 STYLE 1: PIN 1. COLLECTOR 2. BASE 3. EMITTER CASE 451A-03 ISSUE B A 4X 1 Z 3 P R B DIM A B C D E H J K L N P R Z 2 2X D 2X K L E C H NOTES: 1. CONTROLLING DIMENSIONS: INCHES. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. ALL DIMENSIONS ARE SYMMETRICAL ABOUT CENTERLINE UNLESS OTHERWISE NOTED. INCHES MIN MAX 0.197 0.203 0.157 0.163 0.085 0.110 0.047 0.053 0.004 0.010 0.025 0.031 0.004 0.010 0.060 0.110 0.177 0.183 0.180 0.200 0.140 0.160 0.147 0.153 --- 0.020 MILLIMETERS MIN MAX 5.004 5.156 3.988 4.140 2.159 2.794 1.194 1.346 0.102 0.254 0.635 0.787 0.102 0.254 1.524 2.794 4.496 4.648 4.572 5.080 3.556 4.064 3.734 3.886 --- 0.508 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE J N CASE 458B-02 ISSUE C (Micro 200S) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS 9.1-23 CASE DIMENSIONS (continued) J A 4X S NOTES: 1. CONTROLLING DIMENSIONS: INCHES. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION H (PACKAGE COPLANARITY): THE BOTTOM OF LEADS AND REFERENCE PLANE T MUST BE COPLANAR WITHIN DIMENSION H. Z 1 3 P R B DIM A B C D E H J K L N P R Z 2 2X D K 2X L INCHES MIN MAX 0.197 0.203 0.157 0.163 0.085 0.110 0.047 0.053 0.004 0.010 0.000 0.004 0.004 0.010 0.050 0.090 0.177 0.183 0.180 0.200 0.140 0.160 0.147 0.153 --- 0.020 MILLIMETERS MIN MAX 5.004 5.156 3.988 4.140 2.159 2.794 1.194 1.346 0.102 0.254 0.000 0.102 0.102 0.254 1.270 2.286 4.496 4.648 4.572 5.080 3.556 4.064 3.734 3.886 --- 0.508 E C H STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE N CASE 458C-02 ISSUE C (Micro 200Z) G Q 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030" AWAY FROM FLANGE. 2 PL 0.25 (0.010) M T A M B M -B- 3 K 2 D N 0.38 (0.015) M T A H R M B 0.38 (0.015) M M T A M B C -T- -A- E F SEATING PLANE M DIM A B C D E F G H K N Q R INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.055 0.065 0.170 0.210 0.772 0.788 0.118 0.138 0.365 0.375 MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.40 1.65 4.32 5.33 19.60 20.00 3.00 3.51 9.27 9.53 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465-04 ISSUE D CASE DIMENSIONS 9.1-24 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS (continued) RADIUS U 4 PL RADIUS 4 PL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030" AWAY FROM FLANGE. S 1 -B- K 2 D N 0.64 (0.025) M T A R M B 0.38 (0.015) M T A M M B M H C 3 -T- -A- E INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.055 0.065 0.170 0.210 0.775 0.785 0.365 0.375 0.020 REF 0.030 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.40 1.65 4.32 5.33 19.69 19.94 9.27 9.53 0.51 REF 0.76 REF STYLE 1: PIN 1. DRAIN 2. GATE 4. SOURCE F SEATING PLANE DIM A B C D E F H K N R S U CASE 465A-04 ISSUE D G Q 1 2 PL 0.25 (0.010) M T A B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030" AWAY FROM FLANGE. M -B- 3 K 2 D N 0.38 (0.015) M T A R M B 0.38 (0.015) M M T A M B M H C -T- -A- E SEATING PLANE DIM A B C D E F G H K N Q R INCHES MIN MAX 1.335 1.345 0.535 0.545 0.155 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.871 0.889 0.118 0.138 0.515 0.525 MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.94 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.30 22.60 3.00 3.51 13.10 13.30 F STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465B-02 ISSUE A MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS 9.1-25 CASE DIMENSIONS (continued) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030" AWAY FROM FLANGE. 1 -B- K DIM A B C D E F H K N R 2 D N 0.38 (0.015) M T A B M M H INCHES MIN MAX 0.905 0.915 0.535 0.545 0.155 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.871 0.889 0.515 0.525 MILLIMETERS MIN MAX 22.99 23.24 13.6 13.8 3.94 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.30 22.60 13.10 13.30 C -T- -A- SEATING PLANE E STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465C-01 ISSUE O G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030" AWAY FROM FLANGE. Q 2 PL 1 0.25 (0.010) M T A B M M -B- 3 K 2 D R N 0.38 (0.015) M T A M B 0.38 (0.015) M M T A M C -A- H E -T- F SEATING PLANE B M DIM A B C D E F G H K N Q R INCHES MIN MAX 1.065 1.075 0.380 0.390 0.160 0.205 0.425 0.435 0.060 0.070 0.004 0.006 0.870 BSC 0.096 0.106 0.185 0.215 0.591 0.601 0.124 0.130 0.392 0.404 MILLIMETERS MIN MAX 27.05 27.31 9.65 9.91 4.06 5.21 10.80 11.05 1.52 1.78 0.10 0.15 22.10 BSC 2.44 2.70 4.70 5.46 15.01 15.27 3.15 3.30 9.96 10.26 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465D-02 ISSUE A CASE DIMENSIONS 9.1-26 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS (continued) 2X Q G bbb M T B M A M B NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION H IS MEASURED 0.030 INCH AWAY FROM FLANGE. 1 3 2X K B 2 2X D bbb M T A M B N (LID) ccc M T A B M M ccc M T A M M B M R (LID) C E aaa M T A M B M T M (INSULATOR) A F SEATING PLANE S (INSULATOR) aaa M T A M H B M DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX .795 .805 .380 .390 .125 .160 .275 .285 .035 .045 .003 .006 .600 BSC .057 .067 .092 .122 .395 .405 .395 .405 .110 .130 .395 .405 .395 .405 .005 BSC .010 BSC .015 BSC MILLIMETERS MIN MAX 20.19 20.44 9.65 9.9 3.17 4.06 6.98 7.24 0.89 1.14 0.07 0.15 15.24 BSC 1.45 1.7 2.33 3.1 10 10.3 10 10.3 2.79 3.3 10 10.3 10 10.3 0.127 BSC 0.254 BSC 0.381 BSC STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE A CASE 465E-02 ISSUE C 2X D aaa T A M M B NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DIMENSION H IS MEASURED .30 (0.762) AWAY FROM FLANGE. M 1 2 2X K N aaa T A M M B R aaa M C E A A T SEATING PLANE M F H B B T A M B M DIM A B C D E F H K N R aaa INCHES MIN MAX .395 .405 .395 .405 .125 .16 .275 .285 .035 .045 .003 .006 .057 .067 .092 .122 .392 .4 .392 .4 .015 MILLIMETERS MIN MAX 10.03 10.29 10.03 10.29 3.18 4.06 6.98 7.24 0.89 1.14 0.08 0.15 1.45 1.70 2.34 3.10 9.96 10.16 9.96 10.16 0.38 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465F-02 ISSUE A MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS 9.1-27 CASE DIMENSIONS (continued) L R C 2 A F EEEE EEEE EEEE EEEE EEEE EEEE EEE EEE N K G Q S ZONE V 0.095 2.41 0.115 2.92 H 1 D B 0.146 3.71 U ZONE X 4 3 10_DRAFT P ZONE W 0.115 2.92 0.020 0.51 J E 0.89 (0.035) X 45 _ "5 _ RESIN BLEED/FLASH ALLOWABLE inches mm SOLDER FOOTPRINT STYLE 1: PIN 1. 2. 3. 4. DRAIN GATE SOURCE SOURCE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. CASE 466-02 ISSUE B (PLD-1.5) CASE DIMENSIONS 9.1-28 DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010 MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS (continued) 14 8 1 7 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 5. ROUNDED CORNERS OPTIONAL. 6. 646-05 OBSOLETE, NEW STANDARD 646-06. B A F L N C -T- SEATING PLANE J K H D 14 PL G (0.005) M DIM A B C D F G H J K L M N INCHES MIN MAX 0.715 0.770 0.240 0.260 0.145 0.185 0.015 0.021 0.040 0.070 0.100 BSC 0.052 0.095 0.008 0.015 0.115 0.135 0.290 0.310 --- 10_ 0.015 0.039 MILLIMETERS MIN MAX 18.16 18.80 6.10 6.60 3.69 4.69 0.38 0.53 1.02 1.78 2.54 BSC 1.32 2.41 0.20 0.38 2.92 3.43 7.37 7.87 --- 10_ 0.38 1.01 M CASE 646-06 ISSUE N (DIP-14) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 5. ROUNDED CORNERS OPTIONAL. -A- 16 9 1 8 B F C L S -T- SEATING PLANE K H G D J 16 PL 0.25 (0.010) M T A M M DIM A B C D F G H J K L M S INCHES MIN MAX 0.740 0.770 0.250 0.270 0.145 0.175 0.015 0.021 0.040 0.70 0.100 BSC 0.050 BSC 0.008 0.015 0.110 0.130 0.295 0.305 0_ 10 _ 0.020 0.040 MILLIMETERS MIN MAX 18.80 19.55 6.35 6.85 3.69 4.44 0.39 0.53 1.02 1.77 2.54 BSC 1.27 BSC 0.21 0.38 2.80 3.30 7.50 7.74 0_ 10 _ 0.51 1.01 CASE 648-08 ISSUE R (DIP-16) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS 9.1-29 CASE DIMENSIONS (continued) J 18 10 B 1 L 9 M A DIM A B C D F G H J K L M N C N F H D G NOTES: 1. POSITIONAL TOLERANCE OF LEADS (D), SHALL BE WITHIN 0.25 (0.010) AT MAXIMUM MATERIAL CONDITION, IN RELATION TO SEATING PLANE AND EACH OTHER. 2. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 3. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 4. CONTROLLING DIMENSION: INCH. K SEATING PLANE INCHES MIN MAX 0.875 0.915 0.240 0.260 0.140 0.180 0.014 0.022 0.050 0.070 0.100 BSC 0.040 0.060 0.008 0.012 0.115 0.135 0.300 BSC 0_ 15_ 0.020 0.040 MILLIMETERS MIN MAX 22.22 23.24 6.10 6.60 3.56 4.57 0.36 0.56 1.27 1.78 2.54 BSC 1.02 1.52 0.20 0.30 2.92 3.43 7.62 BSC 0_ 15 _ 0.51 1.02 CASE 707-02 ISSUE C (DIP-18) CASE DIMENSIONS 9.1-30 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS (continued) 28 NOTES: 1. POSITIONAL TOLERANCE OF LEADS (D), SHALL BE WITHIN 0.25 (0.010) AT MAXIMUM MATERIAL CONDITION, IN RELATION TO SEATING PLANE AND EACH OTHER. 2. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 3. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 4. CONTROLLING DIMENSION: INCH. 15 B DIM A B C D F G H J K L M N 14 1 H F J M K D G L C N A SEATING PLANE INCHES MIN MAX 1.435 1.465 0.540 0.560 0.155 0.200 0.014 0.022 0.040 0.060 0.100 BSC 0.065 0.085 0.008 0.015 0.115 0.135 0.600 BSC 0_ 15_ 0.020 0.040 MILLIMETERS MIN MAX 36.45 37.21 13.72 14.22 3.94 5.08 0.36 0.56 1.02 1.52 2.54 BSC 1.65 2.16 0.20 0.38 2.92 3.43 15.24 BSC 0_ 15_ 0.51 1.02 CASE 710-02 ISSUE B (DIP-28) -A- Q 2 PL 0.25 (0.010) S -Z- -F- S T F A M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. M V J R B 6 32UNC-2B 2 PL 0.25 (0.010) M Z T A M 1 2 3 4 5 6 7 8 9 C K -E- W N -T- G L P D 9 PL 0.51 (0.020) M T A M X -X- DIM A B C D E F G J K L N P Q R S V W INCHES MIN MAX --- 1.775 --- 1.085 --- 0.870 0.018 0.022 0.465 0.510 0.300 0.325 0.100 BSC 0.156 BSC 0.330 0.370 1.000 BSC 0.165 BSC 0.100 BSC 0.148 0.168 --- 0.595 1.500 BSC 0.209 0.239 0.425 --- STYLE 2: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. MILLIMETERS MIN MAX --- 45.08 --- 27.56 --- 22.10 0.46 0.56 11.81 12.95 7.62 8.25 2.54 BSC 3.96 BSC 8.38 9.40 25.40 BSC 4.19 BSC 2.54 BSC 3.76 4.27 --- 15.11 38.10 BSC 5.31 6.07 10.80 --- RF INPUT GROUND GROUND RESISTOR-GROUND GROUND GROUND GROUND VCC 1 RF OUTPUT CASE 714P-03 ISSUE B MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS 9.1-31 CASE DIMENSIONS (continued) Q 2 PL -A- S -Z- 0.25 (0.010) M A M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. V J -F- T F M R DIM A B C D E F G J K L N P Q R S U V W X Y B 0.25 (0.010) M Z T A M 6-32UNC-2B Y 2 PL U 1 2 3 2 PL 0.25 (0.010) 5 7 8 9 M Z T A M C N K -E- W -T- X G P D 7 PL L -X- 0.51 (0.020) M T A M X CASE 714Y-03 ISSUE D -A- 24 13 1 12 L C -T- NOTE 1 K N E G M J F D 24 PL 0.25 (0.010) 24 PL 0.25 (0.010) RF INPUT GROUND GROUND DELETED VDC DELETED GROUND GROUND RF OUTPUT MILLIMETERS MIN MAX 45.08 ---- 27.56 ---- ---- 21.34 0.46 0.56 11.81 12.95 7.62 8.25 2.54 BSC 3.96 BSC 8.00 8.50 25.40 BSC 4.19 BSC 2.54 BSC 3.76 4.27 ---- 15.24 38.10 BSC 5.08 BSC --- 6.35 11.05 11.43 10.16 BSC 3.85 4.15 STYLE 2: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. RF OUTPUT GROUND GROUND DELETED VDC DELETED GROUND GROUND RF INPUT NOTES: 1. CHAMFERED CONTOUR OPTIONAL. 2. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 3. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 4. CONTROLLING DIMENSION: INCH. -B- SEATING PLANE STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. INCHES MIN MAX 1.775 ---- 1.085 ---- ---- 0.840 0.018 0.022 0.465 0.510 0.300 0.325 0.100 BSC 0.156 BSC 0.315 0.355 1.00 BSC 0.165 BSC 0.100 BSC 0.148 0.168 ---- 0.600 1.500 BSC 0.200 BSC --- 0.250 0.435 0.450 0.400 BSC 0.152 0.163 M T A M M T B M DIM A B C D E F G J K L M N INCHES MIN MAX 1.230 1.265 0.250 0.270 0.145 0.175 0.015 0.020 0.050 BSC 0.040 0.060 0.100 BSC 0.007 0.012 0.110 0.140 0.300 BSC 0_ 15_ 0.020 0.040 MILLIMETERS MIN MAX 31.25 32.13 6.35 6.85 3.69 4.44 0.38 0.51 1.27 BSC 1.02 1.52 2.54 BSC 0.18 0.30 2.80 3.55 7.62 BSC 0_ 15_ 0.51 1.01 CASE 724-03 ISSUE D (DIP-24) CASE DIMENSIONS 9.1-32 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS (continued) -A- 20 11 1 10 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH. B L C -T- K SEATING PLANE M N E G F J D 20 PL 0.25 (0.010) 20 PL 0.25 (0.010) M T A M T B M M DIM A B C D E F G J K L M N INCHES MIN MAX 1.010 1.070 0.240 0.260 0.150 0.180 0.015 0.022 0.050 BSC 0.050 0.070 0.100 BSC 0.008 0.015 0.110 0.140 0.300 BSC 0_ 15 _ 0.020 0.040 MILLIMETERS MIN MAX 25.66 27.17 6.10 6.60 3.81 4.57 0.39 0.55 1.27 BSC 1.27 1.77 2.54 BSC 0.21 0.38 2.80 3.55 7.62 BSC 0_ 15_ 0.51 1.01 CASE 738-03 ISSUE E (DIP-20) U Q 0.76 (0.030) M A M 4 PL M B M 1 2 3 K 4 R DIM A B C D E F G H J K L M N Q R U V -B- 5 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 6 7 K 8 4 PL F V 4 PL 2 PL L G -A- J H STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. N C E -T- MILLIMETERS MIN MAX 22.60 23.11 9.52 10.03 6.65 7.16 1.60 1.95 2.94 3.40 2.87 3.22 16.51 BSC 4.01 4.36 0.07 0.15 4.34 4.90 12.45 12.95 45_NOM 1.051 11.02 3.04 3.35 9.90 10.41 1.02 1.27 0.64 0.89 EMITTER (COMMON) COLLECTOR COLLECTOR EMITTER (COMMON) EMITTER (COMMON) BASE BASE EMITTER (COMMON) INCHES MIN MAX 0.890 0.910 0.375 0.395 0.262 0.282 0.063 0.077 0.116 0.134 0.113 0.127 0.650 BSC 0.158 0.172 0.003 0.006 0.171 0.193 0.490 0.510 45 _NOM 0.414 0.434 0.120 0.132 0.390 0.410 0.040 0.050 0.025 0.035 STYLE 2: PIN 1. 2. 3. 4. 5. 6. 7. 8. SOURCE (COMMON) DRAIN DRAIN SOURCE (COMMON) SOURCE (COMMON) GATE GATE SOURCE (COMMON) SEATING PLANE CASE 744A-01 ISSUE C MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS 9.1-33 CASE DIMENSIONS (continued) D A 0.060 1.52 C 8 5 0.25 H E B M M 1 4 h B 0.275 7.0 X 45 _ 0.155 4.0 q e A C SEATING PLANE 0.024 0.6 L 0.050 1.270 0.10 A1 SO-8 FOOTPRINT B 0.25 STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. C B M A S S STYLE 6: PIN 1. 2. 3. 4. 5. 6. 7. 8. EMITTER COLLECTOR COLLECTOR EMITTER EMITTER BASE BASE EMITTER NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. DIMENSIONS ARE IN MILLIMETER. 3. DIMENSION D AND E DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION. SOURCE DRAIN DRAIN SOURCE SOURCE GATE GATE SOURCE CASE 751-06 ISSUE T (SO-8) 1 P 8 PL 0.25 (0.010) 8 M B S G R K F X 45 _ C -T- SEATING PLANE M D J 16 PL 0.25 (0.010) M T B S A DIM A A1 B C D E e H h L MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.35 0.49 0.19 0.25 4.80 5.00 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0_ 7_ NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 9 -B- mm q -A- 16 inches S DIM A B C D F G J K M P R MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.229 0.244 0.010 0.019 CASE 751B-05 ISSUE J (SO-16) CASE DIMENSIONS 9.1-34 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS (continued) D A 20 10X 0.25 M NOTES: 1. DIMENSIONS ARE IN MILLIMETERS. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF B DIMENSION AT MAXIMUM MATERIAL CONDITION. 11 H M B E M 1 10 h 20X B 0.25 X 45 _ B M T A B A 18X e L SEATING PLANE A1 DIM A A1 B C D E e H h L q C T MILLIMETERS MIN MAX 2.35 2.65 0.10 0.25 0.35 0.49 0.23 0.32 12.65 12.95 7.40 7.60 1.27 BSC 10.05 10.55 0.25 0.75 0.40 1.00 0_ 7_ CASE 751D-06 ISSUE G (SO-20L) -A- 24 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.13 (0.005) TOTAL IN EXCESS OF D DIMENSION AT MAXIMUM MATERIAL CONDITION. 13 -B- 12X P 0.010 (0.25) 1 M B M 12 24X D J 0.010 (0.25) M T A S B S F R C -T- SEATING PLANE M 22X G K X 45 _ DIM A B C D F G J K M P R MILLIMETERS MIN MAX 15.25 15.54 7.40 7.60 2.35 2.65 0.35 0.49 0.41 0.90 1.27 BSC 0.23 0.32 0.13 0.29 0_ 8_ 10.05 10.55 0.25 0.75 INCHES MIN MAX 0.601 0.612 0.292 0.299 0.093 0.104 0.014 0.019 0.016 0.035 0.050 BSC 0.009 0.013 0.005 0.011 0_ 8_ 0.395 0.415 0.010 0.029 CASE 751E-04 ISSUE E (SO-24L) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS 9.1-35 CASE DIMENSIONS (continued) D A NOTES: 1. DIMENSIONS ARE IN MILLIMETERS. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSIONS. 4. MAXIMUM MOLD PROTRUSION 0.015 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF B DIMENSION AT MAXIMUM MATERIAL CONDITION. 15 0.25 E H M B M 28 1 14 B A PIN 1 IDENT L 0.10 A1 e B 0.025 C C C A M DIM A A1 B C D E e H L S B SEATING PLANE q q MILLIMETERS MIN MAX 2.35 2.65 0.13 0.29 0.35 0.49 0.23 0.32 17.80 18.05 7.40 7.60 1.27 BSC 10.05 10.55 0.41 0.90 0_ 8_ S CASE 751F-05 ISSUE F (SO-28L) A D M 16 8X 0.25 9 NOTES: 1. DIMENSIONS ARE IN MILLIMETERS. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSIONS D AND E DO NOT INLCUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 5. DIMENSION B DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF THE B DIMENSION AT MAXIMUM MATERIAL CONDITION. H M B E M 1 8 16X 0.25 M h X 45 _ B B T A B A SEATING PLANE T L 14X e A1 C DIM A A1 B C D E e H h L M MILLIMETERS MIN MAX 2.35 2.65 0.10 0.25 0.35 0.49 0.23 0.32 10.15 10.45 7.40 7.60 1.27 BSC 10.05 10.55 0.25 0.75 0.40 1.00 0_ 7_ CASE 751G-04 ISSUE C (SO-16W) CASE DIMENSIONS 9.1-36 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS (continued) -A- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.12 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.13 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. M 20 11 1 10 -B- G S 10 PL 0.13 (0.005) M B M DIM A B C D G J K L M S C D 20 PL 0.13 (0.005) M T B -T- A S K 0.10 (0.004) L S SEATING PLANE J MILLIMETERS MIN MAX 12.55 12.80 5.10 5.40 --- 2.00 0.35 0.45 1.27 BSC 0.18 0.23 0.55 0.85 0.05 0.20 0_ 7_ 7.40 8.20 INCHES MIN MAX 0.494 0.504 0.201 0.213 --- 0.079 0.014 0.018 0.050 BSC 0.007 0.009 0.022 0.033 0.002 0.008 0_ 7_ 0.291 0.323 CASE 751J-02 ISSUE A (SO-20) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.008) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.13 (0.006) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. -A- -F- 20 11 1 10 K -B- J G S 10 PL 0.13 (0.005) M B M N C E D 20 PL 0.13 (0.005) M T B 0.10 (0.004) L S -T- A S SEATING PLANE M DIM A B C D E F G H J K L M N S MILLIMETERS MIN MAX 12.35 12.80 5.10 5.45 1.95 2.05 0.35 0.50 --- 0.81 12.40* 1.15 1.39 0.59 0.81 0.18 0.27 1.10 1.50 0.05 0.20 0_ 10 _ 0.50 0.85 7.40 8.20 INCHES MIN MAX 0.486 0.504 0.201 0.215 0.077 0.081 0.014 0.020 --- 0.032 0.488* 0.045 0.055 0.023 0.032 0.007 0.011 0.043 0.059 0.001 0.008 0_ 10 _ 0.020 0.033 0.291 0.323 *APPROXIMATE CASE 803C-01 PRELIMINARY (SO-20L) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS 9.1-37 CASE DIMENSIONS (continued) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. -A- -B- K PIN 1 ID G D 8 PL 0.08 (0.003) -T- M T B S A S SEATING PLANE C 0.038 (0.0015) H J DIM A B C D G H J K L MILLIMETERS MIN MAX 2.90 3.10 2.90 3.10 --- 1.10 0.25 0.40 0.65 BSC 0.05 0.15 0.13 0.23 4.75 5.05 0.40 0.70 INCHES MIN MAX 0.114 0.122 0.114 0.122 --- 0.043 0.010 0.016 0.026 BSC 0.002 0.006 0.005 0.009 0.187 0.199 0.016 0.028 L CASE 846A-02 ISSUE D (Micro-8) CASE DIMENSIONS 9.1-38 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS (continued) B L B 39 27 S D C A-B 0.20 (0.008) V F M B 0.20 (0.008) M L -A-, -B-, -D- DETAIL A S S H A-B -B- -A- 0.05 (0.002) A-B S DETAIL A D 26 40 J N 14 52 1 13 BASE METAL D -D- 0.20 (0.008) M B H A-B 0.02 (0.008) S D S V M C A-B S D S DETAIL C M_ C E -H- DATUM PLANE 0.10 (0.004) H -C- M_ G C A-B S D S SECTION B-B 0.05 (0.002) A-B 0.20 (0.008) M SEATING PLANE U_ R Q_ K T W X DETAIL C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DATUM PLANE -H- IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE. 4. DATUMS -A-, -B- AND -D- TO BE DETERMINED AT DATUM PLANE -H-. 5. DIMENSIONS S AND V TO BE DETERMINED AT SEATING PLANE -C-. 6. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.25 (0.010) PER SIDE. DIMENSIONS A AND B DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 7. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OR THE FOOT. DIM A B C D E F G H J K L M N Q R S T U V W X MILLIMETERS MIN MAX 9.90 10.10 9.90 10.10 2.10 2.45 0.22 0.38 2.00 2.10 0.22 0.33 0.65 BSC --- 0.25 0.13 0.23 0.65 0.95 7.80 REF 5_ 10_ 0.13 0.17 0_ 7_ 0.13 0.30 12.95 13.45 0.13 --- 0_ --- 12.95 13.45 0.35 0.45 1.6 REF INCHES MIN MAX 0.390 0.398 0.390 0.398 0.083 0.096 0.009 0.015 0.079 0.083 0.009 0.013 0.026 BSC --- 0.010 0.005 0.009 0.026 0.037 0.307 REF 5_ 10 _ 0.005 0.007 0_ 7_ 0.005 0.012 0.510 0.530 0.005 --- 0_ --- 0.510 0.530 0.014 0.018 0.063 REF CASE 848B-04 ISSUE C (QFP-52) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS 9.1-39 CASE DIMENSIONS (continued) L S H A-B V M C A-B 0.20 (0.008) B 0.20 (0.008) L M -B- -A- 0.05 (0.002) A-B S D S 16 D 25 S 17 24 B P B DETAIL A 9 32 1 8 -A-, -B-, -D- -D- DETAIL A A 0.20 (0.008) M C A-B D S S 0.05 (0.002) A-B S 0.20 (0.008) M H A-B S D F BASE METAL S DETAIL C M N J C E -H- -C- SEATING PLANE H 0.01 (0.004) M G DATUM PLANE D 0.20 (0.008) M C A-B S D S SECTION B-B VIEW ROTATED 90 _CLOCKWISE U T R -H- DATUM PLANE K X DETAIL C Q NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DATUM PLANE -H- IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE. 4. DATUMS -A-, -B- AND -D- TO BE DETERMINED AT DATUM PLANE -H-. 5. DIMENSIONS S AND V TO BE DETERMINED AT SEATING PLANE -C-. 6. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.25 (0.010) PER SIDE. DIMENSIONS A AND B DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 7. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OR THE FOOT. DIM A B C D E F G H J K L M N P Q R S T U V X MILLIMETERS MIN MAX 6.95 7.10 6.95 7.10 1.40 1.60 0.273 0.373 1.30 1.50 0.273 --- 0.80 BSC --- 0.20 0.119 0.197 0.33 0.57 5.6 REF 6_ 8_ 0.119 0.135 0.40 BSC 5_ 10_ 0.15 0.25 8.85 9.15 0.15 0.25 5_ 11_ 8.85 9.15 1.00 REF INCHES MIN MAX 0.274 0.280 0.274 0.280 0.055 0.063 0.010 0.015 0.051 0.059 0.010 --- 0.031 BSC --- 0.008 0.005 0.008 0.013 0.022 0.220 REF 6_ 8_ 0.005 0.005 0.016 BSC 5_ 10_ 0.006 0.010 0.348 0.360 0.006 0.010 5_ 11_ 0.348 0.360 0.039 REF CASE 873-01 ISSUE A (LQFP-32) CASE DIMENSIONS 9.1-40 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS (continued) 4X 0.2 C A-B D D q2 D/2 G D G 24 q1 R1 R2 S q A A2 25 16 A A1 B q3 0.25 L GAGE PLANE (L1) E E1 DETAIL F E1/2 E/2 PLATING 9 32 IIIIII IIII IIIIII IIII IIIIII IIII b1 c c1 8 1 6 BASE METAL (b) D1/2 D1 SECTION G-G 4X 0.2 H A-B D H F SEATING PLANE C 4X e/2 28X 0.08 C e 32X b 0.08 J M C A-B D J M NOTES: 1. DIMENSIONS ARE IN MILLIMETERS. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUMS A, B AND D TO BE DETERMINED AT DATUM PLANE H. 4. DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.25-MM PER SIDE. D1 AND E1 ARE MAXIMUM PLASTIC BODY SIZE DIMENSIONS INCLUDING MOLD MISMATCH. 5. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL NOT CAUSE THE LEAD WIDTH TO EXCEED THE MAXIMUM b DIMENSION BY MORE THAN 0.08-MM. DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OR THE FOOT. MINIMUM SPACE BETWEEN A PROTRUSION AND ADJACENT LEAD IS 0.07-MM 6. EXACT SHAPE OF CORNERS IS OPTIONAL. DIM A A1 A2 b b1 C C1 D D1 e E E1 L L1 M N R1 R2 S EXPOSED FLAG N q q1 q2 q3 VIEW J-J MILLIMETERS MIN MAX --- 1.13 0.039 0.089 0.95 1.05 0.17 0.27 0.17 0.23 0.09 0.2 0.09 0.16 7 BSC 5 BSC 0.5 BSC 7 BSC 5 BSC 0.45 0.75 1 REF 2.09 2.19 2.09 2.19 0.08 --- 0.08 0.2 0.2 --- 0 7 0 --- 11 13 11 13 CASE 873E-02 ISSUE A (TQFP-32EP) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS 9.1-41 CASE DIMENSIONS (continued) 4X 0.200 AB T-U Z DETAIL Y A P A1 48 37 1 36 T U B V AE B1 12 25 13 AE V1 24 DIM A A1 B B1 C D E F G H J K L M N P R S S1 V V1 W AA Z S1 T, U, Z S DETAIL Y 4X 0.200 AC T-U Z 0.080 AC G AB AD AC M_ BASE METAL TOP & BOTTOM N R J 0.250 EEE CCC CCC EEE MILLIMETERS MIN MAX 7.000 BSC 3.500 BSC 7.000 BSC 3.500 BSC 1.400 1.600 0.170 0.270 1.350 1.450 0.170 0.230 0.500 BSC 0.050 0.150 0.090 0.200 0.500 0.700 0 _ 7_ 12 _REF 0.090 0.160 0.250 BSC 0.150 0.250 9.000 BSC 4.500 BSC 9.000 BSC 4.500 BSC 0.200 REF 1.000 REF C E GAUGE PLANE 9 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DATUM PLANE AB IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE. 4. DATUMS T, U, AND Z TO BE DETERMINED AT DATUM PLANE AB. 5. DIMENSIONS S AND V TO BE DETERMINED AT SEATING PLANE AC. 6. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.250 PER SIDE. DIMENSIONS A AND B DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE AB. 7. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. DAMBAR PROTRUSION SHALL NOT CAUSE THE D DIMENSION TO EXCEED 0.350. 8. MINIMUM SOLDER PLATE THICKNESS SHALL BE 0.0076. 9. EXACT SHAPE OF EACH CORNER IS OPTIONAL. F D 0.080 M AC T-U Z SECTION AE-AE W H L_ K DETAIL AD AA CASE 932-03 ISSUE F (LQFP-48) CASE DIMENSIONS 9.1-42 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS (continued) A -P- 16x K REF 0.200 (0.008) 16 M T 9 B L PIN 1 IDENTIFICATION 1 8 -U- C 0.100 (0.004) -T- M D H G SEATING PLANE A K J1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSIONS A AND B ARE TO BE DETERMINED AT DATUM PLANE -U-. K1 DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX --- 5.10 4.30 4.50 --- 1.20 0.05 0.25 0.45 0.55 0.65 BSC 0.22 0.23 0.09 0.24 0.09 0.18 0.16 0.32 0.16 0.26 6.30 6.50 0 10 INCHES MIN MAX --- 0.200 0.169 0.177 --- 0047 0.002 0.010 0.018 0.022 0.026 BSC 0.009 0.010 0.004 0.009 0.004 0.007 0.006 0.013 0.006 0.010 0.248 0.256 0 10 M J A SECTION A-A F CASE 948C-03 ISSUE B (TSSOP-16) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS 9.1-43 CASE DIMENSIONS (continued) A 20X 0.200 (0.004) 20 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSIONS A AND B ARE TO BE DETERMINED AT DATUM PLANE -U-. K REF M T 11 L B PIN 1 IDENTIFICATION 10 1 C -U- 0.100 (0.004) -T- SEATING D H G PLANE A K K1 J1 M J SECTION A-A A F DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX --- 6.60 4.30 4.50 --- 1.20 0.05 0.25 0.45 0.55 0.65 BSC 0.275 0.375 0.09 0.24 0.09 0.18 0.16 0.32 0.16 0.26 6.30 6.50 0 10 INCHES MIN MAX --- 0.260 0.169 0.177 --- 0.047 0.002 0.010 0.018 0.022 0.026 BSC 0.011 0.015 0.004 0.009 0.004 0.007 0.006 0.013 0.006 0.010 0.248 0.256 0 10 CASE 948D-03 ISSUE B (TSSOP-20) CASE DIMENSIONS 9.1-44 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS (continued) 20X 0.15 (0.006) T U K REF 0.10 (0.004) S M T U S V S K K1 2X L/2 20 IIII IIII IIII 11 B L J J1 -U- PIN 1 IDENT SECTION N-N 1 10 0.25 (0.010) N 0.15 (0.006) T U S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE -W-. M A -V- N F DETAIL E -W- C D 0.100 (0.004) -T- SEATING G H DETAIL E DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 6.40 6.60 4.30 4.50 --- 1.20 0.05 0.15 0.50 0.75 0.65 BSC 0.27 0.37 0.09 0.20 0.09 0.16 0.19 0.30 0.19 0.25 6.40 BSC 0_ 8_ INCHES MIN MAX 0.252 0.260 0.169 0.177 --- 0.047 0.002 0.006 0.020 0.030 0.026 BSC 0.011 0.015 0.004 0.008 0.004 0.006 0.007 0.012 0.007 0.010 0.252 BSC 0_ 8_ PLANE CASE 948E-02 ISSUE A (TSSOP-20HS) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS 9.1-45 CASE DIMENSIONS (continued) 16X (b) 0.1 0.2 C B A 16 E/2 2X C B M S A NOTES: 1. DIMENSIONS ARE IN MILLIMETERS. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION D DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. 4. DIMENSION E1 DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 PER SIDE. 5. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN EXCESS OF THE b DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSIONS D AND E1 ARE TO BE DETERMINED AT DATUM PLANE H. S 9 P1 E1 E EXPOSED THERMAL PAD (BOTTOM SURFACE) 8 1 PIN 1 IDENTIFICATION 0.2 C B A B P D A 0.1 C GAUGE PLANE A R e C H DETAIL E PARTING LINE A1 N 0.25 c1 c N L DETAIL E q b b1 CCCC EE CCCC EE CCCC EE DIM A A1 b b1 c c1 D E E1 e L P P1 R q MILLIMETERS MIN MAX --- 1.2 0 0.15 0.19 0.3 0.19 0.25 0.09 0.2 0.09 0.16 4.9 5.1 6.40 BSC 4.3 4.5 0.65 BSC 0.5 0.75 --- 3.9 --- 3 0.18 0.28 0_ 8_ SECTION N-N CASE 948L-01 ISSUE A (TSSOP-16EP) CASE DIMENSIONS 9.1-46 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS (continued) 20X 0.20 C B A 0.10 2X E/2 20 M C B S A S 11 P1 E EXPOSED THERMAL PAD (BOTTOM SURFACE) E1 10 1 PIN 1 IDENTIFICATION NOTES: 1. DIMENSIONS ARE IN MILLIMETERS. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION D DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. 4. DIMENSION E1 DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 PER SIDE. 5. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN EXCESS OF THE b DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSIONS D AND E1 ARE TO BE DETERMINED AT DATUM PLANE H. b REF 0.20 C B A B P D A 0.10 C GAUGE PLANE c A A1 R e H DETAIL E PARTING LINE N 0.25 c1 c N L q b b1 EEE CCC CCC EEE CCC EEE DIM A A1 b b1 c c1 D E E1 e L P P1 R q MILLIMETERS MIN MAX --- 1.20 0.00 0.10 0.19 0.30 0.19 0.25 0.09 0.20 0.09 0.16 6.40 6.60 6.40 BSC 4.30 4.50 0.65 BSC 0.50 0.75 --- 4.80 --- 3.00 0.27 0.37 0_ 8_ SECTION N-N DETAIL E CASE 948M-01 ISSUE O (TSSOP-20EP) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS 9.1-47 CASE DIMENSIONS (continued) 4X 0.200 AB T-U Z A 9 NOTES: 1. CONTROLLING DIMENSION: MILLIMETER. 2. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE AB IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE. 4. DATUMS T, U, AND Z TO BE DETERMINED AT DATUM PLANE AB. 5. DIMENSIONS S AND V TO BE DETERMINED AT DATUM PLANE AC. 6. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.250 PER SIDE. DIMENSIONS A AND B DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE AB. 7. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. DAMBAR PROTRUSION SHALL NOT CAUSE THE D DIMENSION TO EXCEED 0.350. 8. MINIMUM SOLDER PLATE THICKNESS SHALL BE 0.0076. 9. EXACT SHAPE OF EACH CORNER IS OPTIONAL. A1 24 19 18 1 V B Y T V1 Y 13 6 U B1 Y DIM A A1 B B1 C D E F G H J K M N P Q R S S1 V V1 W X 12 7 Z S1 S 4X 0.200 AB T-U Z AD AB AC 0.080 AC MILLIMETERS MIN MAX 4.000 BSC 2.000 BSC 4.000 BSC 2.000 BSC 1.400 1.600 0.170 0.270 1.350 1.450 0.170 0.230 0.500 BSC 0.050 0.150 0.090 0.200 0.500 0.700 12_REF 0.090 0.160 0.250 BSC 0_ 7_ 0.150 0.250 6.000 BSC 3.000 BSC 6.000 BSC 3.000 BSC 0.200 REF 1.000 REF M_ TOP & BOTTOM T, U, Z R J C E AE AE CCCC EEEE EEEE CCCC EEEE CCCC N F D W H K X DETAIL AD Q_ GAUGE PLANE 0.250 0.080 AC T-U Z P G SECTION AE-AE DETAIL Y CASE 977-02 ISSUE A (LQFP-24) CASE DIMENSIONS 9.1-48 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS (continued) h X 45 _ A E2 1 14 x e 16 D e/2 D1 8 9 E1 8X bbb M B BOTTOM VIEW E C B S EE CCC CCC EE b1 Y c A A2 c1 b DATUM PLANE SEATING PLANE H ccc C q W GAUGE PLANE W L M C A SECT W-W L1 C aaa A1 S NOTES: 1. CONTROLLING DIMENSION: MILLIMETER. 2. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE -H- IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.250 PER SIDE. DIMENSIONS D AND E1 DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE b DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. DIM A A1 A2 D D1 E E1 E2 L L1 b b1 c c1 e h q aaa bbb ccc MILLIMETERS MIN MAX 2.000 2.300 0.025 0.100 1.950 2.100 6.950 7.100 4.372 5.180 8.850 9.150 6.950 7.100 4.372 5.180 0.466 0.720 0.250 BSC 0.300 0.432 0.300 0.375 0.180 0.279 0.180 0.230 0.800 BSC --- 0.600 0_ 7_ 0.200 0.200 0.100 1.000 0.039 DETAIL Y CASE 978-03 ISSUE B (PFP-16) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS 9.1-49 CASE DIMENSIONS (continued) 0.05 C PIN 1 INDEX AREA B A D b C 3 0.20 C 0.1 M C A B 0.03 M C E b1 0.1 M C A B A1 0.03 M C A2 DETAIL A A 2X C A B d 0.1 M C A B C 0.03 M C d1 2X 0.1 M 0.03 M 24X 4X 4X e 2X h F E1 0.08 E2 0.08 M G M C A B C A B D2 0.08 M DETAIL A C A B D1 0.08 M NOTES: 1. DIMENSIONS ARE IN MILLIMETERS. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. PARALLELISM MEASUREMENT SHALL EXCLUDE ANY EFFECTS OF MARKING. 4. THERE IS TO BE MINIMUM SPACE BETWEEN ALL PADS OF 0.14 WHICH MUST BE FREE OF ALL PLATING BLEEDOUT. 5. THERE IS TO BE MINIMUM SPACE BETWEEN THE GROUND RING AND THE PERIPHERAL PADS OF 0.09 WHICH MUST BE FREE OF ALL PLATING BLEEDOUT. C A B BOTTOM VIEW DIM A A1 A2 b b1 D D1 D2 d d1 E E1 E2 e F G h MILLIMETERS MIN MAX --- 0.80 0.05 0.10 0.60 0.70 0.24 0.36 0.34 0.46 5.00 BSC 3.40 3.60 3.00 3.20 0.39 0.51 0.39 0.51 5.00 BSC 3.40 3.60 3.00 3.20 0.50 BSC 2.10 BSC 2.075 BSC 0.10 0.30 CASE 1261A-01 ISSUE C (BCC32EP++) CASE DIMENSIONS 9.1-50 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS (continued) A E1 B r1 PIN ONE ID 4 b2 4X 1 aaa M D A M D A 4 1 5 2 6 3 D1 aaa M D A 2X b1 aaa 5 2 D 4X e 3 6 PIN ONE ID VIEW Y-Y E A1 L q A2 c1 C SEATING PLANE NOTES: 1. CONTROLLING DIMENSION: INCH . 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSION D AND E1 DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.006 PER SIDE. DIMENSION D AND E1 DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSIONS b1 AND b2 DO NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.005 TOTAL IN EXCESS OF THE b1 AND b2 DIMENSIONS AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. A DATUM PLANE H Y Y D STYLE 1: PIN 1. 2. 3. 4. 5. 6. SEATING PLANE SOURCE (COMMON) DRAIN SOURCE (COMMON) SOURCE (COMMON) GATE SOURCE (COMMON) DIM A A1 A2 D D1 E E1 L b1 b2 c1 e r1 q aaa INCHES MIN MAX 0.098 0.110 0.000 0.004 0.098 0.106 0.926 0.934 0.806 0.814 0.296 0.304 0.246 0.254 0.060 0.070 0.193 0.199 0.078 0.084 0.007 0.011 0.193 BSC 0.063 0.068 0_ 6_ 0.004 MILLIMETERS MIN MAX 2.489 2.794 0.000 0.102 2.489 2.692 23.520 23.724 20.472 20.676 7.518 7.722 6.248 6.452 1.524 1.778 4.902 5.055 1.981 2.134 0.178 0.279 4.902 BSC 1.600 1.727 0_ 6_ 0.102 CASE 1264-06 ISSUE F (TO-270) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS 9.1-51 E1 2X B 2X D3 CASE DIMENSIONS (continued) PIN ONE ID D1 2X b1 E A aaa M D A aaa D M D A E4 CCCCC CCCCC CCCCC CCCCC CCCCC CCCCC CCCCC CCCCC CCCCC E3 PIN 2 D2 PIN 3 EXPOSED HEATSINK AREA PIN 1 H DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 F b1 c1 aaa INCHES MIN MAX .076 .084 .038 .044 .040 .042 .416 .424 .376 .384 .290 .320 .016 .024 .436 .444 .236 .244 .066 .074 .150 .180 .058 .066 .025 BSC .193 .199 .007 .011 .004 MILLIMETERS MIN MAX 1.93 2.13 0.96 1.12 1.02 1.07 10.57 10.77 9.55 9.75 7.37 8.13 0.41 0.61 11.07 11.28 5.99 6.20 1.68 1.88 3.81 4.57 1.47 1.68 0.64 BSC 4.90 5.06 0.18 0.28 0.10 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE DATUM PLANE NOTE 7 A1 A2 A c1 BOTTOM VIEW NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D1" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D1" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSION b1 DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE b1 DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. 7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY. 2X F E2 D ZONE J CASE 1265-06 ISSUE E (TO-272) CASE DIMENSIONS 9.1-52 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS (continued) X D Y LASER MARK FOR PIN A1 IDENTIFICATION IN THIS AREA M 5 K 0.20 Z A A2 E 0.10 Z A1 4 Z 104X DETAIL K ROTATED 90 _ CLOCKWISE M 0.15 11 10 9 8 7 6 5 4 10X 3 2 e METALIZED MARK FOR PIN A1 IDENTIFICATION IN THIS AREA 1 A B C D NOTES: 1. DIMENSIONS ARE IN MILLIMETERS. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION b IS MEASURED AT THE MAXIMUM SOLDER BALL DIAMETER, PARALLEL TO DATUM PLANE Z. 4. DATUM Z (SEATING PLANE) IS DEFINED BY THE SPHERICAL CROWNS OF THE SOLDER BALLS. 5. PARALLELISM MEASUREMENT SHALL EXCLUDE ANY EFFECT OF MARK ON TOP SURFACE OF PACKAGE. E F 10X DIM A A1 A2 b D E e G e H J K L MILLIMETERS MIN MAX 1.25 1.60 0.21 0.40 1.16 REF 0.35 0.45 10.00 BSC 10.00 BSC 0.80 BSC 3 104X b 0.15 M Z X Y 0.08 M Z VIEW M-M CASE 1285-01 ISSUE O (BGA-104) MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA CASE DIMENSIONS 9.1-53 CASE DIMENSIONS (continued) A S B A Z 0.010 M T F M A M V J F NOTES: 1. DIMENSIONS ARE IN INCHES. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. Q 2X R F 2X 6-32UNC-2B L 2X 0.010 U Z T A M M E 1 2 3 5 7 8 9 C N K E 4X 2X 0.010 M Z T A G 7X P D 0.020 Y INCHES MIN MAX --- 1.775 --- 1.085 --- 0.840 0.015 0.021 0.465 0.510 0.300 0.325 0.100 BSC 0.156 BSC 0.315 0.355 1.000 BSC 0.165 BSC 0.100 BSC 0.148 0.168 --- 0.600 1.500 BSC 0.200 BSC --- 0.250 0.435 --- 0.400 BSC 0.152 0.163 0.009 0.011 MILLIMETERS MIN MAX --- 45.085 --- 27.559 --- 21.336 0.381 0.533 11.811 12.954 7.62 8.255 2.540 BSC 3.962 BSC 8.001 9.017 25.400 BSC 4.191 BSC 2.540 BSC 3.759 4.267 --- 15.24 38.100 BSC 5.080 BSC --- 6.350 11.049 --- 10.160 BSC 3.861 4.140 0.229 0.279 Z X T W DIM A B C D E F G J K L N P Q R S U V W X Y Z X M T A M X M STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9. RF INPUT GROUND GROUND DELETED VDC DELETED GROUND GROUND RF OUTPUT CASE 1302-01 ISSUE B CASE DIMENSIONS 9.1-54 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Chapter Ten Applications and Product Literature Motorola's Applications Literature provides guidance to the effective use of its semiconductor families across a broad range of practical applications. Many different topics are discussed in a way that is not possible in a device data sheet, from detailed circuit designs complete with PCB layouts, through matters to consider when embarking on a design, to complete overviews of product families and their design philosophies. Information is presented in the form of Application Notes, Article Reprints and detailed Engineering Bulletins. Table of Contents Page Applications Literature . . . . . . . . . . . . . . . . . . . . . . . . . 10.1-2 Product Literature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.1-3 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Applications and Product Literature 10.1-1 Literature Application Notes, Engineering Bulletins and Article Reprints of special interest to designers of RF and RF/IF equipment are listed below. This technical documentation is available on the Motorola Semiconductor Product Sector Web site or is available through the Motorola Literature Distribution Center. Phone and fax numbers for ordering literature are listed on the back cover of this book and in our Accessing Data On-line section. Application Notes AN139A Understanding Transistor Response Parameters AN211A Field Effect Transistors in Theory and Practice AN215A RF Small-Signal Design Using Two-Port Parameters AN238 Transistor Mixer Design Using 2-Port Parameters AN267 Matching Network Designs with Computer Solutions AN282A Systemizing RF Power Amplifier Design AN419 UHF Amplifier Design Using Data Sheet Design Curves AN423 Field Effect Transistor RF Amplifier Design Techniques AN535 Phase-Locked-Loop Design Fundamentals AN548A Microstrip Design Techniques for UHF Amplifiers AN555 Mounting Stripline-Opposed-Emitter (SOE) Transistors AN593 Broadband Linear Power Amplifiers Using Push-Pull Transistors AN721 Impedance Matching Networks Applied to RF Power Transistors AN749 Broadband Transformers and Power Combining Techniques for RF AN758 A Two-Stage 1 kW Solid-State Linear Amplifier AN762 Linear Amplifiers for Mobile Operation AN779 Low-Distortion 1.6 to 30 MHz SSB Driver Designs AN790 Thermal Rating of RF Power Transistors AN791 A Simplified Approach to VHF Power Amplifier Design AN827 The Technique of Direct Programming by Using a Two-Modulus Prescaler AN860 Power MOSFETs versus Bipolar Transistors AN878 VHF MOS Power Applications AN923 800 MHz Test Fixture Design AN955 A Cost Effective VHF Amplifier for Land Mobile Radios AN1022 Mechanical and Thermal Considerations in Using RF Linear Hybrid Amplifiers AN1024 RF Linear Hybrid Amplifiers AN1025 Reliability Considerations in Design and Use of RF Integrated Circuits AN1026 Extending the Range of an Intermodulation Distortion Test AN1027 Reliability/Performance Aspects of CATV Amplifier Design AN1028 35/50 Watt Broadband (160 - 240 MHz) Push-Pull TV Amplifier Band III Applications and Product Literature 10.1-2 AN1029 AN1030 AN1032 AN1033 AN1034 AN1037 AN1038 AN1039 AN1040 AN1041 AN1107 AN1207 AN1253 AN1277 AN1526 AN1528 AN1529 AN1530 AN1531 AN1539 AN1575 AN1580 AN1599 AN1602 AN1617 AN1639 AN1643 AN1658 AN1670 AN1671 TV Transposers Band IV and VPo = 0.5 W/1.0 W 1 W/2 W Broadband TV Amplifier Band IV and V How Load VSWR Affects Non-Linear Circuits Match Impedances in Microwave Amplifiers Three Balun Designs for Push-Pull Amplifiers Solid-State Power Amplifier -- 300 Watt FM, 88 - 108 MHz 1.2 V, 40 - 900 MHz Broadband Amplifier with the TP3400 Transistor 470 - 860 MHz -- Broadband Amplifier - 5 W Mounting Considerations for Power Semiconductors Mounting Procedures for Very High Power RF Transistors Understanding RF Data Sheet Parameters The MC145170 in Basic HF and VHF Oscillators An Improved PLL Design Method Without n and Offset Reference PLLs for Fine Resolution or Fast Hopping RF Power Device Impedances: Practical Considerations Packaging Considerations for RF Transistors RF Power Circuit Concepts Using FETs and BJTs Motorola Advanced Amplifier Concept Package Parameter Extraction Techniques for RF Power Transistors Models An IF Communication Circuit Tutorial Worldwide Cordless Telephone Frequencies Mounting and Soldering Recommendations for the Motorola Power Flat Pack Package Power Control with the MRFIC0913 GaAs Integrated Power Amplifier and MC33169 Support IC 3.6 V and 4.8 V GSM/DCS1800 Dual Band PA Application with DECT Capability Using Standard Motorola RFIC's Mounting Recommendations for Copper Tungsten Flanged Transistors Phase Noise Measurement Using the Phase Lock Technique RF LDMOS Power Modules for GSM Base Station Application: Optimum Biasing Circuit Converting MC13110/13111 Based Designs to the MC13110A,B/13111A,B 60 Watts, GSM 900 MHz, LDMOS Two-Stage Amplifier MC145170 PSpice Modeling Kit MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Literature (continued) AN1673 AN1674 AN1687 AN1691 AN1696 AN1697 AN1900 AN4005 Solder Reflow Mounting Method for the MRF286 and Similar Packages Mounting Method with Mechanical Fasteners for the MRF286 and Similar Packages A Full-Featured Wireless Interface for RS-232 Communications Practical Solutions for Medium Data Rate Wireless Communications Broadband Intermodulation Performance Development Using the Rohde & Schwarz Vector Network Analyzer ZVR GSM900/DCS/1800 Dual-Band 3.6 V Power Amplifier Solution with Open Loop Control Scheme CDMA Upmixer Design Considerations Using the MRFIC1854 Thermal Management and Mounting Method for the PLD 1.5 RF Power Surface Mount Package AR594 AR596 AR606 AR612 AR614 AR624 AR628 AR629 Engineering Bulletins EB19 EB27A Article Reprints AR141 Applying Power MOSFETs in Class D/E RF Power Amplifier Design AR164 Good RF Construction Practices and Techniques AR165S RF Power MOSFETs AR176 New MOSFETs Simplify High Power RF Amplifier Design AR254 Phase-Locked Loop Design Articles AR305 Building Push-Pull, Multioctave, VHF Power Amplifiers AR313 Wideband RF Power Amplifier AR346 RF Power FETs - Their Characteristics and Applications, Parts 1 & 2 AR347 A Compact 1-kW 2-50 MHz Solid State Linear Amplifier AR510 VSWR Protection of Solid State RF Power Amplifiers AR511 Biasing Solid State Amplifiers to Linear Operation AR571 Silicon MOSFET Technology for Wireless Communications AR573 Modeling a New Generation for RF Devices: MOSFETs of L-Band Applications AR579 CAD of a Broadband, Class-C 65 Watt UHF Power Amplifier AR580 MOSFET RF Power: An Update -- Parts 1 and 2 AR581 Procedure Performs Thermal Measurements on Pulsed Devices AR582 MIMP Analyzes Impedance Matching Networks AR583 Power MOSFETs Handle Bipolar Amp Applications AR586 Power MOSFETs versus Bipolar Transistors AR589 QSPLOT Utility Displays S-Parameter Data GaAs RF ICs Target 2.4-GHz Frequency Band Design and Performance of a Low Voltage, Low Noise 900 MHz Amplifier PCS and RF Components Plastic Packages Hold Power RF MOSFETs Advantages of LDMOS in High Power Linear Amplification Aluminum-Based Metallization Enhances Device Reliability Impedance Measurements for High Power RF Transistors Using the TRL Method Digital Predistortion Techniques for RF Power Amplifiers with CDMA Applications EB38 EB63 EB74 EB77 EB89 EB104 EB105 EB107 EB202 EB209 EB211 Controlled - Q RF Technology -- What It Means, How It's Done Get 300 Watts PEP Linear Across 2 to 30 MHz from This Push-Pull Amplifier Measuring the Intermodulation Distortion of Linear Amplifiers 140 W (PEP) Amateur Radio Linear Amplifier 2 - 30 MHz A 10 Watt, 225 - 400 MHz Amplifier -- MRF331 A 60-Watt, 225 - 400 MHz Amplifier -- 2N6439 A 1-Watt, 2.3 GHz Amplifier Get 600 Watts RF from Four Power FETs A 30 Watt, 800 MHz Amplifier Design Mounting Considerations for Motorola RF Power Modules RF Transistor Design Mounting Method for RF Power Leadless Surface Mount Transistors Thermal Management and Solder Mounting Method for the MRF286, 60 Watt Power Device in a CuW (Copper Tungsten) Base Package Product Literature DL110/D SG46/D CD301/D BR1502/D BR1504/D BR3031/D SG384/D MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Wireless RF, IF and Transmitter Device Data Book Wireless RF, IF and Transmitter Selector Guide Wireless RF, IF and Transmitter Data Library CD-ROM Wireless Infrastructure Solutions RF Power Solutions Wireless Infrastructure DSP Solutions RF LDMOS Infrastructure Technology Selector Guide Applications and Product Literature 10.1-3 Applications and Product Literature 10.1-4 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Chapter Eleven Motorola Distributor & Worldwide Sales Offices MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA DISTRIBUTOR & SALES OFFICES 11.1-1 01/02/01 MOTOROLA AUTHORIZED DISTRIBUTOR AND WORLDWIDE SALES OFFICES NORTH AMERICAN DISTRIBUTORS UNITED STATES San Diego - Continued ALABAMA Huntsville Allied Electronics, Inc. . . . . . . . Arrow Electronics . . . . . . . . . . . FAI . . . . . . . . . . . . . . . . . . . . . . . . Future Electronic . . . . . . . . . . . . Avnet Electronics . . . . . . . . . . . Newark . . . . . . . . . . . . . . . . . . . . Arrow (formerly Wyle) . . . . . . . (256) 721-3500 (256) 864-3300 (256) 837-9209 (256) 971-2010 (256) 837-8700 (256) 837-9091 (256) 830-1119 Mobile Allied Electronics, Inc. . . . . . . . (334) 476-1875 ARIZONA Phoenix Allied Electronics, Inc. . . . . . . . FAI . . . . . . . . . . . . . . . . . . . . . . . . Future Electronics . . . . . . . . . . . Avnet Electronics . . . . . . . . . . . Arrow (formerly Wyle) . . . . . . . (602) 831-2002 (602) 731-4661 (602) 968-7140 (602) 736-7000 (602) 804-7000 Tempe Arrow Electronics . . . . . . . . . . . (602) 966-6600 Newark . . . . . . . . . . . . . . . . . . . . (602) 966-6340 Penstock . . . . . . . . . . . . . . . . . . (602) 967-1620 ARKANSAS Little Rock CALIFORNIA Agoura Hills Future Electronics . . . . . . . . . . . (818) 871-1740 Calabassas Arrow Electronics . . . . . . . . . . . (818) 880-9686 Arrow (formerly Wyle) . . . . . . . (818) 880-9000 Culver City Avnet Electronics . . . . . . . . . . . (310) 558-2000 Irvine (949) 587-0404 (949) 581-4662 (949) 753-4778 (949) 453-1515 (949) 789-4100 (949) 753-9953 (949) 789-9953 FAI . . . . . . . . . . . . . . . . . . . . . . . . (818) 879-1234 Arrow (formerly Wyle) . . . . . . . (818) 880-9000 Manhattan Beach Penstock . . . . . . . . . . . . . . . . . . (310) 546-8953 Orange County Allied Electronics, Inc. . . . . . . . (949) 727-3010 Palo Alto Newark . . . . . . . . . . . . . . . . . . . . (650) 812-6300 Riverside Allied Electronics, Inc. . . . . . . . (909) 980-6522 Newark . . . . . . . . . . . . . . . . . . . . (909) 980-2105 Rocklin Avnet Electronics . . . . . . . . . . . (916) 632-4500 Roseville Arrow (formerly Wyle) . . . . . . . (916) 783-9953 Sacramento (916) 632-3104 (916) 782-7882 (916) 565-1760 (916) 638-5282 San Diego Allied Electronics, Inc. . . . . . . . Arrow Electronics . . . . . . . . . . . Arrow Zeus . . . . . . . . . . . . . . . . FAI . . . . . . . . . . . . . . . . . . . . . . . . Future Electronics . . . . . . . . . . . San Fernando Valley Allied Electronics, Inc. . . . . . . . (818) 598-0130 San Jose Allied Electronics, Inc. . . . . . . . Arrow Electronics . . . . . . . . . . . Arrow Zeus . . . . . . . . . . . . . . . . Arrow Electronics . . . . . . . . . . . FAI . . . . . . . . . . . . . . . . . . . . . . . . Future Electronics . . . . . . . . . . . Richardson Electronics . . . . . . (408) 383-0366 (408) 441-9700 (408) 629-4789 (408) 428-6400 (408) 434-0369 (408) 434-1122 (800) 737-6937 Santa Clara Arrow (formerly Wyle) . . . . . . . (408) 727-2500 Santa Fe Springs Newark . . . . . . . . . . . . . . . . . . . . (650) 929-9722 Sierra Madre Penstock . . . . . . . . . . . . . . . . . . (818) 355-6775 Sunnyvale Avnet Electronics . . . . . . . . . . . (408) 435-3600 Penstock . . . . . . . . . . . . . . . . . . (408) 730-0300 Thousand Oaks Woodland Hills Avnet Electronics . . . . . . . . . . . (818) 594-0404 Richardson Electronics . . . . . . (800) 737-6937 COLORADO Lakewood FAI . . . . . . . . . . . . . . . . . . . . . . . . (303) 237-1400 Future Electronics . . . . . . . . . . . (303) 232-2008 Denver Allied Electronics, Inc. . . . . . . . (303) 790-1664 Newark . . . . . . . . . . . . . . . . . . . . (303) 373-4540 Englewood (619) 279-2550 (619) 565-4800 (619) 565-4800 (619) 623-2888 (619) 625-2800 Thornton Arrow (formerly Wyle) . . . . . . . (303) 457-9953 CONNECTICUT Bloomfield Cheshire Allied Electronics, Inc. . . . . . . . FAI . . . . . . . . . . . . . . . . . . . . . . . . Future Electronics . . . . . . . . . . . Avnet Electronics . . . . . . . . . . . (203) 272-7730 (203) 250-1319 (203) 250-0083 (203) 271-5700 Wallingford Arrow Electronics . . . . . . . . . . . (203) 265-7741 Arrow (formerly Wyle) . . . . . . . (203) 269-8077 FLORIDA Altamonte Springs Arrow Electronics . . . . . . . . . . . (407) 333-9300 Arrow Zeus . . . . . . . . . . . . . . . . (407) 333-3055 Largo/Tampa/St. Petersburg Avnet Electronics . . . . . . . . . . . (813) 507-5000 Newark . . . . . . . . . . . . . . . . . . . . (813) 287-1578 Arrow (formerly Wyle) . . . . . . . (813) 576-3004 Maitland Arrow (formerly Wyle) . . . . . . . (407) 740-7450 Miami Allied Electronics, Inc. . . . . . . . (305) 558-2511 Orlando Allied Electronics, Inc. . . . . . . . (407) 539-0055 FAI . . . . . . . . . . . . . . . . . . . . . . . . (407) 865-9555 Newark . . . . . . . . . . . . . . . . . . . . (407) 896-8350 Tallahassee FAI . . . . . . . . . . . . . . . . . . . . . . . . (904) 668-7772 Tampa Allied Electronics, Inc. . . . . . . . (813) 579-4660 Newark . . . . . . . . . . . . . . . . . . . . (813) 287-1578 Penstock . . . . . . . . . . . . . . . . . . (813) 247-7556 Plantation Newark . . . . . . . . . . . . . . . . . . . . (305) 424-4400 Winter Park Avnet Electronics . . . . . . . . . . . (407) 657-3300 Penstock . . . . . . . . . . . . . . . . . . (407) 672-1114 GEORGIA Atlanta Allied Electronics, Inc. . . . . . . . (770) 497-9544 FAI . . . . . . . . . . . . . . . . . . . . . . . . (404) 447-4767 Duluth Arrow Electronics . . . . . . . . . . . (404) 497-1300 Avnet Electronics . . . . . . . . . . . (770) 623-4400 Marietta Norcross Future Electronics . . . . . . . . . . . Newark . . . . . . . . . . . . . . . . . . . . Arrow (formerly Wyle) . . . . . . . Penstock . . . . . . . . . . . . . . . . . . (404) 441-7676 (404) 448-1300 (770) 441-9045 (770) 734-9990 IDAHO Boise Allied Electronics, Inc. . . . . . . . (208) 331-1414 FAI . . . . . . . . . . . . . . . . . . . . . . . . (208) 376-8080 ILLINOIS Addison Arrow (formerly Wyle) . . . . . . . (630) 620-0969 Arlington Heights Avnet Electronics . . . . . . . . . . . (847) 797-7300 FAI . . . . . . . . . . . . . . . . . . . . . . . . (708) 843-0034 Newark Electronics Corp. . . . . (773) 784-5100 Hoffman Estates Future Electronics . . . . . . . . . . . (407) 865-7900 Richardson Electronics . . . . . . (800) 737-6937 Future Electronics . . . . . . . . . . . (708) 882-1255 Richardson Electronics . . . . . . (800) 737-6937 Itasca Clearwater FAI . . . . . . . . . . . . . . . . . . . . . . . . (813) 530-1665 Future Electronics . . . . . . . . . . . (813) 530-1222 Arrow Electronics . . . . . . . . . . . (305) 429-8200 Arrow (formerly Wyle) . . . . . . . (954) 420-0500 Newark . . . . . . . . . . . . . . . . . . . . (630) 317-1000 Palatine Penstock . . . . . . . . . . . . . . . . . . (708) 934-3700 Ft. Lauderdale FAI . . . . . . . . . . . . . . . . . . . . . . . . Future Electronics . . . . . . . . . . . Avnet Electronics . . . . . . . . . . . Newark . . . . . . . . . . . . . . . . . . . . Arrow Electronics . . . . . . . . . . . (708) 250-0500 Arrow Zeus . . . . . . . . . . . . . . . . (630) 595-9730 Lombard Deerfield Beach (954) 428-9494 (954) 426-4043 (954) 677-3500 (954) 486-1151 Jacksonville Allied Electronics, Inc. . . . . . . . (904) 739-5920 Newark . . . . . . . . . . . . . . . . . . . . (904) 399-5041 MOTOROLA DISTRIBUTOR & SALES OFFICES 11.1-2 FLORIDA - continued Lake Mary Richardson Electronics . . . . . . (800) 737-6937 Arrow Electronics . . . . . . . . . . . (303) 799-0258 Avnet Electronics . . . . . . . . . . . (303) 790-1662 Penstock . . . . . . . . . . . . . . . . . . (303) 799-7845 Newark . . . . . . . . . . . . . . . . . . . . (860) 243-1731 Los Angeles Allied Electronics, Inc. . . . . . . . FAI . . . . . . . . . . . . . . . . . . . . . . . . Newark . . . . . . . . . . . . . . . . . . . . Arrow (formerly Wyle) . . . . . . . (619) 571-7540 (619) 623-9100 (619) 453-8211 (619) 558-6600 Newark . . . . . . . . . . . . . . . . . . . . (805) 449-1480 Newark . . . . . . . . . . . . . . . . . . . . (501) 225-8130 Arrow Electronics . . . . . . . . . . . Arrow Zeus . . . . . . . . . . . . . . . . FAI . . . . . . . . . . . . . . . . . . . . . . . . Future Electronics . . . . . . . . . . . Avnet Electronics . . . . . . . . . . . Arrow (formerly Wyle) . . . . . . . Arrow (formerly Wyle) . . . . . . . Avnet Electronics . . . . . . . . . . . Penstock . . . . . . . . . . . . . . . . . . Newark . . . . . . . . . . . . . . . . . . . . Arrow (formerly Wyle) . . . . . . . Rockford Allied Electronics, Inc. . . . . . . . (815) 636-1010 Newark . . . . . . . . . . . . . . . . . . . . (815) 229-0225 Springfield Newark . . . . . . . . . . . . . . . . . . . . (217) 787-9972 Wood Dale Allied Electronics, Inc. . . . . . . . (630) 860-0007 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 01/02/01 AUTHORIZED DISTRIBUTORS - continued UNITED STATES - continued INDIANA Indianapolis Allied Electronics, Inc. . . . . . . . Arrow Electronics . . . . . . . . . . . FAI . . . . . . . . . . . . . . . . . . . . . . . . Future Electronics . . . . . . . . . . . Avnet Electronics . . . . . . . . . . . Newark . . . . . . . . . . . . . . . . . . . . Arrow (formerly Wyle) . . . . . . . (317) 571-1880 (317) 299-2071 (317) 469-0441 (317) 469-0447 (317) 575-3500 (317) 844-0047 (317) 581-6152 Ft. Wayne Newark . . . . . . . . . . . . . . . . . . . . (219) 484-0766 Penstock . . . . . . . . . . . . . . . . . . (219) 432-1277 IOWA Bettendorf Newark . . . . . . . . . . . . . . . . . . . . (319) 359-3711 Cedar Rapids Allied Electronics, Inc. . . . . . . . (319) 390-5730 Newark . . . . . . . . . . . . . . . . . . . . (319) 393-3800 KANSAS Kansas City Allied Electronics, Inc. . . . . . . . (913) 541-9542 FAI . . . . . . . . . . . . . . . . . . . . . . . . (913) 381-6800 Lenexa Arrow Electronics . . . . . . . . . . . . (913) 541-9542 Olathe Penstock . . . . . . . . . . . . . . . . . . (913) 829-9330 Overland Park Future Electronics . . . . . . . . . . . (913) 649-1531 Avnet Electronics . . . . . . . . . . . (913) 663-7900 Newark . . . . . . . . . . . . . . . . . . . . (913) 677-0727 KENTUCKY Louisville Allied Electronics, Inc. . . . . . . . (502) 452-2293 Newark . . . . . . . . . . . . . . . . . . . . (502) 423-0280 LOUISIANA New Orleans Allied Electronics, Inc. . . . . . . . (504) 466-7575 MARYLAND Towson Richardson Electronics . . . . . . (800) 737-6937 MASSACHUSETTS Boston Arrow Electronics . . . . . . . . . . . (978) 658-0900 FAI . . . . . . . . . . . . . . . . . . . . . . . . (978) 779-3111 Newark . . . . . . . . . . . . . . . . . . 1-800-4NEWARK Bolton Future Corporate . . . . . . . . . . . . (978) 779-3000 Danvers Allied Electronics, Inc. . . . . . . . (978) 646-9120 Lowell Newark . . . . . . . . . . . . . . . . . . . . (978) 551-4300 Marlboro Newark . . . . . . . . . . . . . . . . . . . . (508) 229-2200 North Andover Richardson Electronics . . . . . . (800) 737-6937 Norwell Richardson Electronics . . . . . . (800) 737-6937 Peabody Avnet Electronics . . . . . . . . . . . (978) 532-3701 Wilmington Arrow Zeus . . . . . . . . . . . . . . . . (978) 658-4776 MICHIGAN Detroit Allied Electronics, Inc. . . . . . . . (313) 416-9300 FAI . . . . . . . . . . . . . . . . . . . . . . . . (313) 513-0015 Newark . . . . . . . . . . . . . . . . . . . . (313) 967-0600 Grand Rapids Future Electronics . . . . . . . . . . . (616) 698-6800 Newark . . . . . . . . . . . . . . . . . . . . (616) 954-6700 MICHIGAN - continued Livonia NEW YORK Albany Arrow Electronics . . . . . . . . . . . (734) 455-0850 Future Electronics . . . . . . . . . . . (248) 489-1179 Avnet Electronics . . . . . . . . . . . (734) 416-5800 Saginaw Newark . . . . . . . . . . . . . . . . . . . . (517) 799-0480 Troy Newark . . . . . . . . . . . . . . . . . . . . (248) 583-2899 MINNESOTA Bloomington Burnsville Penstock . . . . . . . . . . . . . . . . . . (612) 882-7630 Eden Prairie Arrow Electronics . . . . . . . . . . . (612) 941-5280 FAI . . . . . . . . . . . . . . . . . . . . . . . . (612) 947-0909 Future Electronics . . . . . . . . . . . (612) 944-2200 Minneapolis Allied Electronics, Inc. . . . . . . . (612) 938-5633 Newark . . . . . . . . . . . . . . . . . . . . (612) 331-6350 Richardson Electronics (800) 737-6937 Great Neck Allied Electronics, Inc. . . . . . . . (516) 487-5211 Allied Electronics, Inc. . . . . . . . Arrow Electronics . . . . . . . . . . . FAI . . . . . . . . . . . . . . . . . . . . . . . . Future Electronics . . . . . . . . . . . Avnet Electronics . . . . . . . . . . . Newark . . . . . . . . . . . . . . . . . . . . Penstock . . . . . . . . . . . . . . . . . . Wyle . . . . . . . . . . . . . . . . . . . . . . (516) 234-0485 (516) 231-1000 (516) 348-3700 (516) 234-4000 (516) 434-7400 (516) 567-4200 (516) 724-9580 (516) 231-7850 Henrietta Arrow (formerly Wyle) . . . . . . . (716) 334-5970 Konkoma MISSISSIPPI Jackson Avnet Electronics . . . . . . . . . . . (516) 737-0600 Newark . . . . . . . . . . . . . . . . . . . . (601) 956-3834 Long Island FAI . . . . . . . . . . . . . . . . . . . . . . . . (516) 348-3700 MISSOURI Earth City Avnet Electronics . . . . . . . . . . . (314) 770-6300 St. Louis (314) 240-9405 (314) 567-6888 (314) 291-5350 (314) 997-0685 (314) 997-4441 (314) 991-0400 NEBRASKA Omaha Allied Electronics, Inc. . . . . . . . (402) 697-0038 Newark . . . . . . . . . . . . . . . . . . . . (402) 592-2423 NEVADA Las Vegas Poughkeepsie Allied Electronics, Inc. . . . . . . . (914) 452-1470 Newark . . . . . . . . . . . . . . . . . . . . (914) 298-2810 Purchase Arrow Zeus . . . . . . . . . . . . . . . . (914) 701-7400 Ronkonkoma Richardson Electronics (800) 737-6937 Rochester Allied Electronics, Inc. . . . . . . . Arrow Electronics . . . . . . . . . . . FAI . . . . . . . . . . . . . . . . . . . . . . . . Future Electronics . . . . . . . . . . . Avnet Electronics . . . . . . . . . . . (716) 292-1670 (716) 427-0300 (716) 387-9600 (716) 387-9550 (716) 475-9130 Syracuse Allied Electronics, Inc. . . . . . . . (702) 258-1087 Arrow (formerly Wyle) . . . . . . . (702) 765-7117 NEW JERSEY Bridgewater Penstock . . . . . . . . . . . . . . . . . . (908) 575-9490 East Brunswick Allied Electronics, Inc. . . . . . . . (908) 613-0828 Newark . . . . . . . . . . . . . . . . . . . . (732) 937-6600 Fairfield FAI . . . . . . . . . . . . . . . . . . . . . . . . (201) 331-1133 Marlton Arrow Electronics . . . . . . . . . . . (609) 596-8000 FAI . . . . . . . . . . . . . . . . . . . . . . . . (609) 988-1500 Future Electronics . . . . . . . . . . . (609) 596-4080 Mt. Laurel Avnet Electronics . . . . . . . . . . . (609) 222-6400 Arrow (formerly Wyle) . . . . . . . (609) 439-9020 Oradell Arrow (formerly Wyle) . . . . . . . (201) 261-3200 Parsippany Future Electronics . . . . . . . . . . . (201) 299-0400 Avnet Electronics . . . . . . . . . . . (201) 515-1641 Pinebrook Arrow (formerly Wyle) . . . . . . . (973) 882-8358 Somerset Richardson Electronics Newark . . . . . . . . . . . . . . . . . . . . (716) 631-2311 Brooklyn Hauppauge Avnet Electronics . . . . . . . . . . . (612) 346-3000 Allied Electronics, Inc. . . . . . . . Arrow Electronics . . . . . . . . . . . Avnet Electronics . . . . . . . . . . . FAI . . . . . . . . . . . . . . . . . . . . . . . . Future Electronics . . . . . . . . . . . Newark . . . . . . . . . . . . . . . . . . . . Newark . . . . . . . . . . . . . . . . . . . . (518) 489-1963 Buffalo (800) 737-6937 NEW MEXICO Albuquerque (315) 446-7411 (315) 451-4405 (315) 451-2371 (315) 457-4873 NORTH CAROLINA Charlotte Allied Electronics, Inc. . . . . . . . FAI . . . . . . . . . . . . . . . . . . . . . . . . Future Electronics . . . . . . . . . . . Newark . . . . . . . . . . . . . . . . . . . . (704) 525-0300 (704) 548-9503 (704) 547-1107 (704) 535-5650 Greensboro Newark . . . . . . . . . . . . . . . . . . . . (910) 294-2142 Morrisville Arrow (formerly Wyle) . . . . . . . (919) 469-1502 Raleigh Allied Electronics, Inc. . . . . . . . Arrow Electronics . . . . . . . . . . . FAI . . . . . . . . . . . . . . . . . . . . . . . . Future Electronics . . . . . . . . . . . Avnet Electronics . . . . . . . . . . . (919) 876-5845 (919) 876-3132 (919) 876-0088 (919) 790-7111 (919) 872-0712 OHIO Centerville Arrow Electronics . . . . . . . . . . . (513) 435-5563 Cincinnati Allied Electronics, Inc. . . . . . . . (513) 771-6990 Newark . . . . . . . . . . . . . . . . . . . . (513) 942-8700 Cleveland Allied Electronics, Inc. . . . . . . . (505) 872-2770 Avnet Electronics . . . . . . . . . . . (505) 293-5119 Newark . . . . . . . . . . . . . . . . . . . . (505) 828-1878 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Allied Electronics, Inc. . . . . . . . FAI . . . . . . . . . . . . . . . . . . . . . . . . Future Electronics . . . . . . . . . . . Newark . . . . . . . . . . . . . . . . . . . . Allied Electronics, Inc. . . . . . . . (216) 831-4900 FAI . . . . . . . . . . . . . . . . . . . . . . . . (216) 446-0061 Newark . . . . . . . . . . . . . . . . . . . . (216) 391-9330 MOTOROLA DISTRIBUTOR & SALES OFFICES 11.1-3 01/02/01 AUTHORIZED DISTRIBUTORS - continued UNITED STATES - continued OHIO - continued Columbus Allied Electronics, Inc. . . . . . . . (614) 785-1270 Newark . . . . . . . . . . . . . . . . . . . . (614) 326-0352 Dayton FAI . . . . . . . . . . . . . . . . . . . . . . . . Future Electronics . . . . . . . . . . . Avnet Electronics . . . . . . . . . . . Newark . . . . . . . . . . . . . . . . . . . . (513) 427-6090 (513) 426-0090 (513) 439-6735 (937) 294-8980 Mayfield Heights Future Electronics . . . . . . . . . . . (216) 449-6996 Miamisburg Arrow (formerly Wyle) . . . . . . . (937) 436-9953 Solon Arrow Electronics . . . . . . . . . . . (216) 248-3990 Avnet Electronics . . . . . . . . . . . (216) 498-1100 Arrow (formerly Wyle) . . . . . . . (440) 248-9996 Toledo Newark . . . . . . . . . . . . . . . . . . . . (419) 866-0404 Worthington Avnet Electronics . . . . . . . . . . . (614) 888-3313 OKLAHOMA Oklahoma City UTAH Draper Allied Electronics, Inc. . . . . . . . (864) 288-8835 Allied Electronics, Inc. . . . . . . . (864) 288-9610 TENNESSEE Knoxville Newark . . . . . . . . . . . . . . . . . . . . (423) 588-6493 Memphis Newark . . . . . . . . . . . . . . . . . . . . (901) 396-7970 TEXAS Austin Allied Electronics, Inc. . . . . . . . Arrow Electronics . . . . . . . . . . . FAI . . . . . . . . . . . . . . . . . . . . . . . . Future Electronics . . . . . . . . . . . Avnet Electronics . . . . . . . . . . . Newark . . . . . . . . . . . . . . . . . . . . Penstock . . . . . . . . . . . . . . . . . . Arrow (formerly Wyle) . . . . . . . (512) 219-7171 (512) 835-4180 (512) 346-6426 (512) 502-0991 (512) 219-3700 (512) 338-0287 (512) 346-9762 (512) 833-9953 Tulsa Allied Electronics, Inc. . . . . . . . (918) 250-4505 FAI . . . . . . . . . . . . . . . . . . . . . . . . (918) 492-1500 Avnet Electronics . . . . . . . . . . . (918) 459-6000 OREGON Beaverton Arrow Electronics Corp. . . . . . . (503) 629-8090 Avnet Electronics . . . . . . . . . . . (503) 526-6200 Arrow (formerly Wyle) . . . . . . . (503) 598-9953 Portland (503) 603-0866 (503) 603-0956 (503) 297-1984 (503) 646-1670 PENNSYLVANIA Allentown Newark . . . . . . . . . . . . . . . . . . . . (610) 434-7171 Chadds Ford Allied Electronics, Inc. . . . . . . . (610) 388-8455 Coatesville Penstock . . . . . . . . . . . . . . . . . . (610) 383-9536 Ft. Washington Newark . . . . . . . . . . . . . . . . . . . . (215) 654-1434 Harrisburg Allied Electronics, Inc. . . . . . . . (717) 540-7101 Philadelphia Penstock . . . . . . . . . . . . . . . . . . (817) 249-0442 Allied Electronics, Inc. . . . . . . . Arrow Electronics . . . . . . . . . . . FAI . . . . . . . . . . . . . . . . . . . . . . . . Future Electronics . . . . . . . . . . . Avnet Electronics . . . . . . . . . . . Newark . . . . . . . . . . . . . . . . . . . . Arrow (formerly Wyle) . . . . . . . (801) 261-5244 (801) 973-6913 (801) 467-9696 (801) 467-4448 (801) 266-2022 (801) 261-5660 (801) 974-9953 West Valley City Arrow (formerly Wyle) . . . . . . . (801) 974-9953 VIRGINIA Herndon Newark . . . . . . . . . . . . . . . . . . . . (703) 707-9010 Richmond Newark . . . . . . . . . . . . . . . . . . . . (804) 282-5671 Springfield Virginia Beach Allied Electronics, Inc. . . . . . . . (757) 363-8662 Brownsville Allied Electronics, Inc. . . . . . . . (210) 548-1129 Arrow Electronics . . . . . . . . . . . (972) 380-6464 Arrow Zeus . . . . . . . . . . . . . . . . (972) 380-4330 WASHINGTON Bellevue Almac Electronics Group . . . . . (206) 643-9992 Penstock . . . . . . . . . . . . . . . . . . (206) 454-2371 Bothell Dallas Allied Electronics, Inc. . . . . . . . FAI . . . . . . . . . . . . . . . . . . . . . . . . Future Electronics . . . . . . . . . . . Avnet Electronics . . . . . . . . . . . Newark . . . . . . . . . . . . . . . . . . . . (214) 341-8444 (972) 231-7195 (972) 437-2437 (214) 553-4300 (972) 458-2528 El Paso Allied Electronics, Inc. . . . . . . . (915) 779-6294 FAI . . . . . . . . . . . . . . . . . . . . . . . . (915) 577-9531 Newark . . . . . . . . . . . . . . . . . . . . (915) 772-6367 Future Electronics . . . . . . . . . . . (206) 489-3400 Kirkland Newark . . . . . . . . . . . . . . . . . . . . (425) 814-6230 Redmond Avnet Electronics . . . . . . . . . . . (206) 882-7000 Arrow (formerly Wyle) . . . . . . . (425) 881-1150 Seattle Allied Electronics, Inc. . . . . . . . (206) 251-0240 FAI . . . . . . . . . . . . . . . . . . . . . . . . (206) 485-6616 Spokane Ft. Worth Allied Electronics, Inc. . . . . . . . (817) 595-3500 Houston Allied Electronics, Inc. . . . . . . . Arrow Electronics . . . . . . . . . . . FAI . . . . . . . . . . . . . . . . . . . . . . . . Future Electronics . . . . . . . . . . . Avnet Electronics . . . . . . . . . . . Newark . . . . . . . . . . . . . . . . . . . . (281) 446-8005 (281) 647-6868 (713) 952-7088 (713) 785-1155 (713) 781-6100 (281) 894-9334 Richardson Penstock . . . . . . . . . . . . . . . . . . (972) 479-9215 Arrow (formerly Wyle) . . . . . . . (713) 784-9953 Arrow (formerly Wyle) . . . . . . . (972) 235-9953 San Antonio FAI . . . . . . . . . . . . . . . . . . . . . . . . (210) 738-3330 Allied Electronics, Inc. . . . . . . . (609) 234-7769 Arrow (formerly Wyle) . . . . . . . (801) 523-2335 Salt Lake City Allied Electronics, Inc. . . . . . . . (703) 644-9515 Benbrook Carrollton Newark . . . . . . . . . . . . . . . . . . . . (405) 943-3700 FAI . . . . . . . . . . . . . . . . . . . . . . . . Future Electronics . . . . . . . . . . . Newark . . . . . . . . . . . . . . . . . . . . Penstock . . . . . . . . . . . . . . . . . . SOUTH CAROLINA Greenville Newark . . . . . . . . . . . . . . . . . . . . (509) 327-1935 WISCONSIN Brookfield Arrow Electronics . . . . . . . . . . . (414) 792-0150 Future Electronics . . . . . . . . . . . (414) 879-0244 Arrow (formerly Wyle) . . . . . . . (414) 879-0434 Madison Newark . . . . . . . . . . . . . . . . . . . . (608) 278-0177 Milwaukee Allied Electronics, Inc. . . . . . . . (414) 796-1280 FAI . . . . . . . . . . . . . . . . . . . . . . . . (414) 792-9778 New Berlin Avnet Electronics . . . . . . . . . . . (414) 780-7200 Wauwatosa Newark . . . . . . . . . . . . . . . . . . . . (414) 453-9100 Pittsburgh Allied Electronics, Inc. . . . . . . . (412) 931-2774 Arrow Electronics . . . . . . . . . . . (412) 963-6807 Newark . . . . . . . . . . . . . . . . . . . . (503) 297-1984 MOTOROLA DISTRIBUTOR & SALES OFFICES 11.1-4 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 01/02/01 AUTHORIZED DISTRIBUTORS - continued CANADA ALBERTA MANITOBA Winnipeg Future Active Calgary (Bus. Accts.) . . . . . . . . . . . . . . . . 403-219-3443 Active Components Calgary (Retail Sales) . . . . . . . . . . . . . . . . 403-291-5626 Future Active Edmonton (Bus. Accts.) . . . . . . . . . . . . . . . . 780-438-5888 Active Components Edmonton (Retail Sales) . . . . . . . . . . . . . . . . 780-438-0644 Avnet for Western Canada (OEM Contract, Repair, Retail Sales) . . . . . . . . . . . . . . . 1-800-332-8638 Avnet for Western Canada (Disty & Bus. Sales) . . . . . . . . . 1-800-672-8638 BRITISH COLUMBIA Vancouver Allied Electronics, Inc. . . . . . . . Arrow Electronics . . . . . . . . . . . FAI . . . . . . . . . . . . . . . . . . . . . . . . Future Electronics . . . . . . . . . . . Hamilton/Avnet Electronics . . . . . . . Newark . . . . . . . . . . . . . . . . . . . . FAI . . . . . . . . . . . . . . . . . . . . . . . . Future Electronics . . . . . . . . . . . Avnet Electronics . . . . . . . . . . . Newark . . . . . . . . . . . . . . . . . . . . ONTARIO - continued Toronto (209) 786-3075 (204) 944-1446 (800) 663-5500 (800) 463-9275 ONTARIO Kanata Penstock . . . . . . . . . . . . . . . . . . (613) 592-6088 London Newark . . . . . . . . . . . . . . . . . . . . (519) 685-4280 Mississauga Penstock . . . . . . . . . . . . . . . . . . Newark . . . . . . . . . . . . . . . . . . . . Richardson Electronics Arrow (formerly Wyle) (905) 403-0724 (905) 670-2888 (800) 737-6937 (905) 212-4366 Ottawa (604) 420-9691 (604) 421-2333 (604) 654-1050 (604) 294-1166 (604) 420-4101 (800) 463-9275 Allied Electronics, Inc. . . . . . . . Arrow Electronics . . . . . . . . . . . FAI . . . . . . . . . . . . . . . . . . . . . . . . Future Electronics . . . . . . . . . . . Avnet Electronics . . . . . . . . . . . Arrow (formerly Wyle) (613) 228-1964 (613) 226-6903 (613) 820-8244 (613) 727-1800 (613) 226-1700 (613) 270-9953 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA Arrow Electronics . . . . . . . . . . . FAI . . . . . . . . . . . . . . . . . . . . . . . . Future Electronics . . . . . . . . . . . Avnet Electronics . . . . . . . . . . . Newark . . . . . . . . . . . . . . . . . . . . Arrow (formerly Wyle) (905) 670-7769 (905) 612-9888 (905) 612-9200 (905) 564-6060 (905) 670-2888 (905) 212-7100 QUEBEC Montreal Arrow Electronics . . . . . . . . . . . FAI . . . . . . . . . . . . . . . . . . . . . . . . Future Electronics . . . . . . . . . . . Avnet Electronics . . . . . . . . . . . Arrow (formerly Wyle) (514) 421-7411 (514) 694-8157 (514) 694-7710 (514) 335-1000 (514) 694-9953 Mt. Royal Newark . . . . . . . . . . . . . . . . . . . . (514) 738-4488 Quebec City Arrow Electronics . . . . . . . . . . . (418) 687-4231 FAI . . . . . . . . . . . . . . . . . . . . . . . . (418) 877-1414 Future Electronics . . . . . . . . . . . (418) 877-6666 MOTOROLA DISTRIBUTOR & SALES OFFICES 11.1-5 01/02/01 INTERNATIONAL DISTRIBUTORS ARGENTINA Electrocomponentes . . . . . . . 54-11-4375-3366 Elko . . . . . . . . . . . . . . . . . . . . . 54-11-4372-1101 AUSTRALIA Arrow Electric Pty. Ltd . . . . . . . . . (61-3) 9574-9300 Avnet (Australia) Pty. Ltd . . . 132 732 (nationwide) Future Electronics . . . . . . . . . (61-3) 9899-7944 Farnell . . . . . . . . . . . . . . . . . . . (61) 2 9644-7722 AUSTRIA EBV Elektronik . . . . . . . . . . . . . . (43) 189152-0 Farnell . . . . . . . . . . . . . . . . . . . (49) 8961 393939 SEI/Elbatex GmbH . . . . . . . . . . . . (43) 1 866420 Spoerle Electronic . . . . . . . . . . . . . (43) 1 360460 BELGIUM EBV Elektronik . . . . . . . . . . . . . (32) 2 716 0010 Farnell . . . . . . . . . . . . . . . . . . . . (31) 30 241 7333 Future Electronics . . . . . . . . . . . (32) 3 780 3001 SEI Belgium . . . . . . . . . . . . . . . . (32) 2 460 0747 Spoerle Electronic . . . . . . . . . . . (32) 2 725 4660 BRAZIL Avnet . . . . . . . . . . . . . . . . . . . . 55-11-5079-2150 Baron Electronics . . . . . . . . . . 55-11-492-2776 Farnell . . . . . . . . . . . . . . . . . . . 55-11-4066-9400 Future . . . . . . . . . . . . . . . . . . . . 55-19-235-1511 Intertek . . . . . . . . . . . . . . . . . . . 55-11-266-2922 Karimex . . . . . . . . . . . . . . . . . 55-11-5189-1900 Masktrade . . . . . . . . . . . . . . . 55-11-3361-2766 Panamericana . . . . . . . . . . . . 55-11-3661-6133 Siletec . . . . . . . . . . . . . . . . . . . . 55-11-536-4401 Tec . . . . . . . . . . . . . . . . . . . . . . 55-11-5505-2046 Teleradio . . . . . . . . . . . . . . . . . . 55-11-574-0788 BULGARIA Macro Group . . . . . . . . . . . . . . . . (359) 2708140 CHILE Baron Electronics . . . . . . . . . 1-305-685-1400 CHINA Nanco Electronics Supply Ltd . . . . . (852) 27653025 Avnet WKK Components Ltd. . . . . . . (852) 21765388 China Electronic Appliance Corp. . . . . . . . . . . . . . . . . . . . . . . . . . (86-10) 68245065 Qing Cheng Enterprises Ltd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (852) 2493-4202 Future Electronics Shangai . . . . . . . . . . . . . . . . (021) 64431164 Hong Kong . . . . . . . . . . . . . (852) 24206238 Arrow Electronics China Ltd . . . . . . (852) 2484-2484 MARUBUN/ARROW (HK) Ltd. . . . . . (852) 2375-1126 Richardson Electronics. . . . . . . . . (86-21) 6440-0807 COLOMBIA Baron Electronics . . . . . . . . . 1-305-685-1400 COSTA RICA Baron Electronics . . . . . . . . . 1-305-685-1400 CZECH REPUBLIC EBV Elektronik . . . . . . . . . . . (420) 2 90022101 Spoerle Electronic . . . . . . . . . (420) 2 71737173 SEI/Elbatex . . . . . . . . . . . . . . . (420) 2 4763707 Macro Group . . . . . . . . . . . . . . (420) 2 3412182 DENMARK Arrow Denmark A/S . . . . . . . . . (45) 44 508200 A/S Avnet EMG . . . . . . . . . . . . . (45) 44 880800 EBV Elektronik - Abyhoj . . . . . . (45) 86250466 EBV Elektronik- Aabyhoej . . . . (45) 86250660 Farnell . . . . . . . . . . . . . . . . . . . . . (45) 44 536644 Future Electronics . . . . . . . . . . . (45) 961 00 961 FINLAND KOREA Arrow Finland . . . . . . . . . . . . . . (358) 9 476660 Avnet Nortek . . . . . . . . . . . . . . . (358) 9 613181 EBV Elektronik . . . . . . . . . . . (358) 9 27052790 Farnell . . . . . . . . . . . . . . . . . . . . (358) 9345 5400 Future Electronics . . . . . . . . . . (358) 9 3455400 FRANCE Arrow Electronique . . . . . . . . (33) 1 49 78 49 78 Avnet . . . . . . . . . . . . . . . . . . . . (33) 1 49 65 27 00 EBV Elektronik . . . . . . . . . . . . (33) 1 40963000 Farnell . . . . . . . . . . . . . . . . . . . . (33) 474 659466 Future Electronics . . . . . . . . . . . (33) 1 69821111 Sonepar Electronique . . . . . . (33) 1 69 19 89 00 Avnet EMG . . . . . . . . . . . . . . . . (49) 89 4511001 EBV Elektronik GmbH . . . . . . (49) 89 99114-0 Farnell . . . . . . . . . . . . . . . . . . . (49) 89 61 303103 Future Electronics GmbH . . . . . . . (49) 89-957 270 SEI/Jermyn GmbH . . . . . . . . . . (49) 6431-5080 Spoerle Electronic . . . . . . . . . . (49) 6103-304-0 GREECE EBV Elektronik . . . . . . . . . . . . . . (30) 13414300 HONG KONG Arrow Asia Pac Ltd . . . . . . . . . (852) 2484-2484 Arrow/Components Agent Ltd . . . . (852) 2484-2112 EEC International (HK) Limited. . . . . . . . . . . . . . . . . . . (852) 2365-7775 ext. 512 MARUBUN/ARROW (HK) Ltd. . . . . . . . . . . . . . . . . . . . . . . . . . . (852) 2375-1126 Nanco Electronics Supply Ltd . . . . . . . . . . . . . . . . . . . . . . . . . . (852) 2333-5121 Avnet WKK Components Ltd. . . . . . (852) 2357-8888 Future Electronics . . . . . . . . . . (852) 2420-6238 Arrow/Texny (HK) Ltd. . . . . . . (852) 2765-0118 Qing Cheng Enterprises Ltd. . . . . . (852) 2493-4202 HUNGARY Spoerle Electronics . . . . . . . . . . . (36) 11409194 . . . . . . . . . . . . . . . . . . . . . . . . . . . . (36) 11294202 Future Electronics . . . . . . . . . . . . (36) 11409194 . . . . . . . . . . . . . . . . . . . . . . . . . . . (36) 1 224 0510 Macro Group . . . . . . . . . . . . . . . . (36) 11409194 . . . . . . . . . . . . . . . . . . . . . . . . . . . . (36) 12030277 SEI/Elbatex . . . . . . . . . . . . . . . . . (36) 11409194 Future Electronics . . . . . . . . . . (91-80) 5593106 Max India Ltd . . . . . . . . . . . . . . (91-11) 6250250 Arrow Electronics (India) Ltd. . . . . . (91) 80 5546125 INDONESIA PT. Ometraco . . . . . . . . . . . . . . (6221) 619-6166 IRELAND Arrow Electronics . . . . . . . . . . . (353) 14595540 EBV Elektronik . . . . . . . . . . . . . (353) 14564034 Farnell . . . . . . . . . . . . . . . . . . . . . (353) 18309277 Future Electronics . . . . . . . . . . . . (353) 6541330 Macro Group . . . . . . . . . . . . . . . (353) 16766904 ITALY Avnet EMG . . . . . . . . . . . . . . . . . (39) 02 381901 EBV Elektronik Italy . . . . . . . (39) 02 66096290 Farnell . . . . . . . . . . . . . . . . . . . (44) 113 231 1311 Future Electronics . . . . . . . . . . . (39) 02 660941 Silverstar Ltd . . . . . . . . . . . . . . (39) 02 66 12 51 JAPAN AMSC Co., Ltd . . . . . . . . . . . Fuji Electronics Co., Ltd . . . . . . . Marubun Corporation . . . . . . Tokyo Electron Device Ltd. . . . . . MOTOROLA DISTRIBUTOR & SALES OFFICES 11.1-6 Avnet Baltronic Ltd . . . . . . . . . . . (371) 8821118 Macro Group . . . . . . . . . . . . . . . . (371) 7313195 LITHUANIA Macro Group . . . . . . . . . . . . . . . (370) 7-764937 Ultro Technologies Pte. Ltd . . . . . . . . . . . . . . . . . . (65) 545-7811 / 540-8328 Arrow Strong Electronics (M) Sdn Bhd . . . . . . . . . . . . . . . . . . . . . . . . . . . (604) 646-4768 Arrow Components (M) Sdn Bhd . . . . . . . . . . . . . . . . . . . . . . . . . . . (604) 229-6613 Future Electronics . . . . . . . . . . . (60-4) 2277213 MEXICO Avnet . . . . . . . . . . . . . . . . . . . . . . . . (3) 632-0182 Baron Electronics . . . . . . . . . 1-305-685-1400 Dicopel . . . . . . . . . . . . . . . . . . . . . . (5) 705-7422 Future . . . . . . . . . . . . . . . . . . . . . . . (3) 122-0043 Semiconductores Profesionales . . . . . . (5) 658-6011 Steren . . . . . . . . . . . . . . . . . . . . . . . (5) 325-0925 NETHERLANDS Holland EBV Elektronik . . . . . . . . . . . . (31) 3465 83010 Farnell . . . . . . . . . . . . . . . . . . . . (31) 30 241 7333 Future Electronics . . . . . . . . . . (31) 76 544 4888 SEI/Benelux B.V. . . . . . . . . . . . (31) 7657 22500 Spoerle Electronics - Nieuwegen . . . . . . . . . . . . . . . . . . . . . . . . . . . (31) 306391234 Spoerle Electronics - Veldhoven . . . . . . . . . . . . . . . . . . . . . . . . . . . (31) 402545430 NEW ZEALAND Avnet Pacific Ltd . . . . . . . . . . . (64-9) 636-7801 Arrow Components (NZ) Ltd . . . . . . (64) 4570-2260 Future Electronics . . . . . . . . . . . (64) 3348-0256 Farnell . . . . . . . . . . . . . . . . . . . (612) 9 644-7722 NORWAY INDIA Arrow Field Eesti . . . . . . . . . . . . . (372) 6503288 Avnet Baltronic . . . . . . . . . . . . . . (372) 6397000 Farnell . . . . . . . . . . . . . . . . . . . . (358) 9345 5400 LATVIA MALAYSIA GERMANY ESTONIA Arrow Electronics Korea Ltd. . . . . . (82-2) 650-6400 Future Electronics . . . . . . . . . . (82-2) 555-6736 Segyung Electronics . . . . . . . . (82-2) 514-5614 Nasco Co. Ltd . . . . . . . . . . . . . (82-2) 868-4988 Liteon Korea Ltd . . . . . . . . . . . (82-2) 650-9700 Jung Kwang Semiconductors Ltd . . . . . . . . . . . . . . . . . . . . . . . . . (82-2) 2278-5333 81-422-54-6800 81-3-3814-1415 81-3-3639-8951 81-45-474-7036 Arrow Tahonic A/S . . . . . . . . . . A/S Avnet EMG . . . . . . . . . . . . . EBV Elektronik . . . . . . . . . . . . . Future Electronics . . . . . . . . . . . (47) 2237 8440 (47) 6677 3600 (47) 2267 1780 (47) 2290 5800 PHILIPPINES Ultro Technologies Pte. Ltd . . . . . . . . . . . . . . . . . . (65) 545-7811 / 540-8328 Future Electronics . . . . . . . . . . . . . . . (632-807) 5092 / 3512 / 3524 POLAND EBV Elektronik . . . . . . . . . . . . . (48) 713422944 Future Electronics . . . . . . . . . . (48) 22 61 89202 Macro Group . . . . . . . . . . . . . . . (48) 22 224337 SEI/Elbatex . . . . . . . . . . . . . . . (48) 22 6217122 Spoerle Electronic . . . . . . . . . . (48) 22 6465227 PORTUGAL Amitron Arrow . . . . . . . . . . . . . . (35) 114714182 Farnell . . . . . . . . . . . . . . . . . . . . (34) 90120 2080 SEI-Selco . . . . . . . . . . . . . . (351) 2-973-82-03 ROMANIA Macro Group . . . . . . . . . . . . . . . . (401) 6343129 RUSSIA St. Petersburg Macro Group . . . . . . . . . . . . . . . (781) 25311476 Moscow Macro Group - Moscow . . . . . . . (7) 095 30600266 EBV Elektronik . . . . . . . . . . . (7) 095 976 11 76 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA 01/02/01 INTERNATIONAL DISTRIBUTORS - continued SCOTLAND EBV Elektronik . . . . . . . . . . . . (44) 1414202070 Future . . . . . . . . . . . . . . . . . . . (44) 1 419413999 SINGAPORE MARUBUN/ARROW Electronics (S) Pte.Ltd.(65 ) 536-0050 Future Electronics Ltd . . . . . . . . (65) 479-1300 Ultro Technologies Pte. Ltd . . . . . . . . . . . . . . . . . . (65) 545-7811 / 540-8328 Avnet Cinergi Pte Ltd. . . . . . . . . (65) 481-6776 Arrow Strong Electronics (S) Pte. Ltd . . . . . . . . . . . . . . . . . . . . . . . . . . . . (65) 276-3996 Arrow Electronics (S) Pte Ltd. . . . . . . . (65) 8458388 Farnell . . . . . . . . . . . . . . . . . . . . . . (66) 788-3922 SLOVAKIA Macro Group . . . . . . . . . . . . . . . . (42) 89634181 SEI/Elbatex . . . . . . . . . . . . . . . . . (42) 17295007 SLOVENIA EBV Elektronik . . . . . . . . . . . (386) 611 330216 SEI/Elbatex . . . . . . . . . . . . . . (386) 611 597198 SOUTH AFRICA Avnet-ASD . . . . . . . . . . . . . . . (27) 11 4442333 Reutech Components . . . . . . (27) 11 3972992 SPAIN Amitron Arrow . . . . . . . . . . . . . (34) 91 3043040 EBV Elektronik . . . . . . . . . . . . (34) 91 8043256 Farnell . . . . . . . . . . . . . . . . . . . (44) 113 231 0447 SEI/Selco S.A. . . . . . . . . . . . . (34) 91 637 10 11 SWEDEN TURKEY Arrow-Th:s AB . . . . . . . . . . . . (46) 8 56265500 Avnet EMG AB . . . . . . . . . . . . (46) 8 629 14 00 EBV Elektronik . . . . . . . . . . . . . (46) 405 92100 Farnell . . . . . . . . . . . . . . . . . . . . (46) 8 730-5000 Future Electronics . . . . . . . . . . . (46) 8 441 5470 SWITZERLAND EBV Elektronik . . . . . . . . . . . . . Farnell . . . . . . . . . . . . . . . . . . . . . SEI/Elbatex AG . . . . . . . . . . . . . Spoerle Electronic . . . . . . . . . . . (41) 1 7456161 (41) 1204 6464 (41) 56 4375111 (41) 1 8746262 TAIWAN Avnet-Mercuries Co. Ltd . . . . . . (886-2) 2516-7303 Arrow/Ally Inc. . . . . . . . . . . . (886-2) 2696-7388 Elitetron Electronic Co. Ltd . . . . (886-2) 2796-2400 Future Electronics . . . . . . . . (886-2) 2517-0900 Solomon Technology Corp. . . . . . . . . . . . . . . . . . . . . . . . . (886-2) 2788-8989 Strong Electronics Co. Ltd . . . . . (886-2) 2917-9917 EBV Elektronik . . . . . . . . . . . (90) 216 4631352 Motorola Representative . . . . . . (90) 212 274 66 48 UNITED KINGDOM Arrow Electronics (UK) Ltd . . . . . . (44) 1 234 270027 Avnet EMG 44 . . . . . . . . . . . . . . . (1) 438788300 EBV Elektronik . . . . . . . . . . . (44) 1 628 783688 Farnell . . . . . . . . . . . . . . . . . . . (44) 1 132 636311 Future Electronics Ltd. . . . . . (44) 1 753 763000 Macro Group . . . . . . . . . . . . . (44) 1 628 606000 Newark . . . . . . . . . . . . . . . . . . (44) 1 420 543333 VENEZUELA Baron Electronics . . . . . . . . . 1-305-685-1400 THAILAND Arrow Strong Electronics (S) Pte Ltd. . . . . . . . . . . . . . . . . . . . . . . . . . (662) 567-5025-6 Future Electronics (Thailand) Ltd. . . . . . . . . . . . . . . . . . . . . . . . . . (662) 361-8400-2 Sahapiphat Ltd . . . . . (662) 237-9474 / 5 / 6 / 7 Ultro Technologies Pte. Ltd . . . . . . . . . . . . . . . . . . (65) 545-7811 / 540-8328 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA MOTOROLA DISTRIBUTOR & SALES OFFICES 11.1-7 01/02/01 MOTOROLA WORLDWIDE SALES OFFICES UNITED STATES ALABAMA CANADA ALBERTA Huntsville . . . . . . . . . . . . . . . . . . (256) 464-6800 ALASKA . . . . . . . . . . . . . . . . . . . (800) 635-8291 CALIFORNIA Irvine . . . . . . . . . . . . . . . . . . . . . . Roseville . . . . . . . . . . . . . . . . . . . San Diego . . . . . . . . . . . . . . . . . Sunnyvale . . . . . . . . . . . . . . . . . Westlake Village . . . . . . . . . . . . (949) 399-4000 (916) 781-6880 (858) 541-2163 (408) 749-0510 (805) 379-0966 Englewood . . . . . . . . . . . . . . . . . (303) 689-2870 CONNECTICUT Wallingford . . . . . . . . . . . . . . . . . (203) 949-4100 FLORIDA Maitland . . . . . . . . . . . (497) 786-5277 ext. 100 Lawrenceville . . . . . . . . . . . . . . . (770) 338-3810 Vancouver . . . . . . . . . . . . . . . . . (604) 606-8502 Manila . . . . . . . . . . . . . . . . . . . . (63) 2 807-8455 Paranaque . . . . . . . . . . . . . . . . (63) 2 824-4551 Salcedo Village . . . . . . . . . . . . (63) 2 810-0762 POLAND . . . . . . . . . . . . . . . . . . . . . . . . . . (48) 34 27 55 75 ONTARIO Mississauga . . . . . . . . . . . . . . . . (905) 507-7200 Ottawa/Nepean . . . . . . . . . . . . . (613) 226-3491 PUERTO RICO Hato Rey . . . . . . . . . . . . . . . . . . (787) 641-4100 RUSSIA QUEBEC Montreal . . . . . . . . . . . . . . . . . . . (514) 333-3300 . . . . . . . . . . . . . . . . . . . . . . . . . (7) 095 929 90 25 East Kilbride . . . . . . . . . . . . . . 44-1355-355000 INTERNATIONAL SINGAPORE . . . . . . . . . . . . . . . . . (65) 4818188 SPAIN AUSTRALIA Melbourne . . . . . . . . . . . . . . . (61-3) 9213 7766 Sydney . . . . . . . . . . . . . . . . . . (61-2) 9437 8944 Boise . . . . . . . . . . . . . . . . . . . . . . (208) 323-9413 ILLINOIS (847) 632-6400 (847) 413-2500 (847) 523-3940 (847) 480-3525 Indianapolis/Carmel . . . . . . . . . (317) 571-0400 Kokomo . . . . . . . . . . . . . . . . . . . (765) 455-5100 MARYLAND Columbia . . . . . . . . . . . . . . . . . . (410) 381-1570 MASSACHUSETTS (508) 261-4186 (508) 357-8207 (508) 357-8200 (781) 932-9700 MICHIGAN Detroit/Northville . . . . . . . . . . . . (248) 347-6800 MINNESOTA Minnetonka . . . . . . . . . . . . . . . . (612) 932-1500 Beijing . . . . . . . . . . . . . . . . . . . Guangzhou . . . . . . . . . . . . . . Shanghai . . . . . . . . . . . . . . . . Tianjin . . . . . . . . . . . . . . . . . . . 86-10-65642288 86-20-87537888 86-21-63747668 86-22-25325050 CZECH REPUBLIC . . . . . . . . . . . . . . . . . . . . . . . . . (420) 2 21852222 Chesterfield . . . . . . . . . . . . . . . . (636) 519-8600 NEW JERSEY Glen Rock . . . . . . . . . . . . . . . . . (201) 447-7500 Broendby . . . . . . . . . . . . . . . . . . . 45-43-488000 Fairport . . . . . . . . . . . . . . . . . . . . (716) 425-4000 Hauppauge . . . . . . . . . . . . . . . . (631) 361-7000 Helsinki . . . . . . . . . . . . . . . . . . . (358) 9 6866 880 Direct Sales Lines . . . . . . . . . (358) 9 6866 8844 . . . . . . . . . . . . . . . . . . . . . . . . . (358) 9 6866 8845 FRANCE Paris . . . . . . . . . . . . . . . . . . . . . . . 33134 635900 GERMANY Langenhagen/Hanover . . . . . . 49(511) 786880 Munich . . . . . . . . . . . . . . . . . . . . . 49 89 92103-0 Nuremberg . . . . . . . . . . . . . . . . . 49 911 96-3190 Sindelfingen . . . . . . . . . . . . . . . 49 7031 79 7140 Wiesbaden . . . . . . . . . . . . . . . . . . 49 611 973050 Kwai Chung . . . . . . . . . . . . . . 852-2-610-6888 Tai Po . . . . . . . . . . . . . . . . . . . 852-2-666-8333 HUNGARY Raleigh . . . . . . . . . . . . . . . . . . . . (919) 870-4355 Bangalore . . . . . . . . . . . . . . . . . . 91-80-5598615 Dayton/Miamisburg . . . . . . . . . . (937) 438-6800 Colmar . . . . . . . . . . . . . . . . . . . . (215) 996-1900 Philadelphia/Horsham . . . . . . . (215) 956-6200 TEXAS (512) 996-4100 (972) 516-5100 (817) 245-7480 (830) 372-7620 WASHINGTON Bellevue . . . . . . . . . . . . . . . . . . . (425) 614-1544 Spokane . . . . . . . . . . . . . . . . . . . (509) 533-0004 Vancover . . . . . . . . . . . . . . . . . . (360) 253-2089 WISCONSIN Milwaukee/Brookfield . . . . . . . . (262) 792-3940 Field Applications Engineering Available Through All Sales Offices . . . . . . . . . . . . . . . . . . . . . . . . (90) 212 274 66 48 Aylesbury . . . . . . . . . . . . . . . . 44 1 (296) 395252 NORTH AMERICA FULL LINE REPRESENTATIVES CALIFORNIA, Loomis Galena Technology Group . . . . . . . . . . . . . . . . . . . . . . . . . . . (916) 652-0268 COLORADO, Denver Intermountain CSI . . . . . . . . . . . (303) 741-0900 IDAHO, Boise Intermountain CSI . . . . . . . . . . . (208) 424-1002 INDIANA Bailey's Electronics Carmel . . . . . . . . . . . . . . . . . (317) 848-9958 Kokomo . . . . . . . . . . . . . . . . (765) 455-0777 UTAH, Salt Lake City WASHINGTON, Spokane Doug Kenley . . . . . . . . . . . . . . . (509) 533-0004 Milan . . . . . . . . . . . . . . . . . . . . . . . . 39(02) 82201 JAPAN PENNSYLVANIA Bangkok . . . . . . . . . . . . . . . . . . . 66(2) 254-4910 Herzelia . . . . . . . . . . . . . . . . . 972-09-9522333 ITALY OHIO Taipei . . . . . . . . . . . . . . . . . . . . 886(2) 27058000 THAILAND Intermountain CSI . . . . . . . . . . . (801) 572-4010 INDIA ISRAEL NORTH CAROLINA TAIWAN UNITED KINGDOM FINLAND . . . . . . . . . . . . . . . . . . . . . . . . . . (36) 1 250 83 29 NEW YORK Geneva . . . . . . . . . . . . . . . . . . . 41(22) 799 11 11 Zurich . . . . . . . . . . . . . . . . . . . . . 41(1) 730-4074 TURKEY HONG KONG MISSOURI Solna . . . . . . . . . . . . . . . . . . . . . 460(8) 734-8800 SWITZERLAND DENMARK INDIANA Madrid . . . . . . . . . . . . . . . . . . . . . 34(1) 457-8204 or . . . . . . . . . . . . . . . . . . . . . . . . . 34(1) 457-8254 SWEDEN Sao Paulo . . . . . . . . . . . . . . . 55(11) 3030-5000 CHINA IDAHO Austin . . . . . . . . . . . . . . . . . . . . . Dallas/Plano . . . . . . . . . . . . . . . . Ft. Worth . . . . . . . . . . . . . . . . . . . Seguin . . . . . . . . . . . . . . . . . . . . BRITISH COLUMBIA BRAZIL GEORGIA Mansfield . . . . . . . . . . . . . . . . . . Marlborough . . . . . . . . . . . . . . . . Southborough . . . . . . . . . . . . . . Woburn . . . . . . . . . . . . . . . . . . . . Calgary . . . . . . . . . . . . . . . . . . . . (403) 216-2190 SCOTLAND COLORADO Arlington Heights . . . . . . . . . . . . Chicago/Schaumburg . . . . . . . . Libertyville . . . . . . . . . . . . . . . . . Northbrook . . . . . . . . . . . . . . . . . PHILIPPINES Nagoya . . . . . . . . . . . . . . . . . . 81-52-232-3500 Osaka . . . . . . . . . . . . . . . . . . . 81-6-6305-1423 Tokyo . . . . . . . . . . . . . . . . . . . . 81-3-3440-3311 KOREA Pusan . . . . . . . . . . . . . . . . . . . . 82(51) 442-3964 Seoul . . . . . . . . . . . . . . . . . . . . 82-2-3440-7200 NORTH AMERICA HYBRID/MCM COMPONENT SUPPLIERS Chip Supply . . . . . . . . . . . . . . . . Elmo Semiconductor . . . . . . . . Minco Technology Labs Inc. . . . . . . . Semi Dice Inc. . . . . . . . . . . . . . . (407) 298-7100 (818) 768-7400 (512) 834-2022 (310) 594-4631 MALAYSIA Penang . . . . . . . . . . . . . . . . . . . . 60(4) 228-2514 MEXICO Chihuahua . . . . . . . . . . . . . . . . . 52(14) 39-3120 Guadalajara . . . . . . . . . . . 011-52-3-620-7061 Mexico City . . . . . . . . . . . . . . . . . . (5) 257-6761 Zapopan Jalisco . . . . . . . . . . . . 52(36) 78-0750 Marketing . . . . . . . . . . . . . . . . . . 52(36) 21-2023 Customer Service . . . . . . . . . . 52(36) 669-9160 NETHERLANDS Best . . . . . . . . . . . . . . . . . . . . . . (31) 4993 612 11 MOTOROLA DISTRIBUTOR & SALES OFFICES 11.1-8 MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA