N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6660C4 * VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0 * * * Fast Switching Low Threshold Voltage (Logic Level) Low CISS * * * Integral Source-Drain Body Diode Hermetic Surface Mounted Package High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VDS VGS ID IDM PD Drain - Source Voltage Gate - Source Voltage Continuous Drain Current (1) Pulsed Drain Current Total Power Dissipation at PD Total Power Dissipation at TJ Tstg Operating Temperature Range Storage Temperature Range 60V 20V 1.0A 3.0A 5W 40mW/C 700mW 5.6mW/C -65 to +150C -65 to +150C TC = 25C TC 25C De-rate TC > 25C TA 25C De-rate TA > 25C THERMAL PROPERTIES Symbols Parameters RJC Thermal Resistance, Junction To Case RJA Thermal Resistance, Junction To Ambient Min. Typ. Max. Units 25 C/W 178.5 C/W Notes (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) Pulse Width 300us, 2% Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8382 Issue 1 Page 1 of 4 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6660C4 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise stated) Symbols Parameters Test Conditions BVDSS Drain-Source Breakdown Voltage VGS = 0 ID = 1.0A 60 VDS = VGS ID = 1.0mA 0.8 TC = 125C 0.3 VGS(th) Gate Threshold Voltage Min. Typ. Gate-Source Leakage Current IDSS Zero Gate Voltage Drain Current ID(ON)(2) On-State Drain Current RDS(on) (2) gfs VSD trr (2) (2) (2) Static Drain-Source On-State Resistance VGS = 20V VGS = 0 Units V 2 V TC = -55C IGSS Max. 2.5 VDS = 0V 100 TC = 125C 500 VDS = 48V 1.0 TC = 125C 100 VDS = 10V VGS = 10V VGS = 5V ID = 0.3A 5 VGS = 10V ID = 1.0A 3 TC = 125C 5 1.5 Forward Transconductance VDS = 7.5V ID = 525mA 170 Body Diode Forward Voltage VGS = 0 IS = 1.0A 0.7 Body Diode Reverse Recovery VGS = 0 IS = 1.0A nA A A m 1.6 350 V ns DYNAMIC CHARACTERISTICS Ciss Input Capacitance VGS = 0 50 Coss Output Capacitance VDS = 25V 40 Crss Reverse Transfer Capacitance f = 1.0MHz 10 td(on) Turn-On Delay Time VDD = 25V 10 td(off) Turn-Off Delay Time ID = 1.0A RG = 50 Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com pF ns 10 Document Number 8382 Issue 1 Page 2 of 4 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6660C4 MECHANICAL DATA Dimensions in mm (inches) 9.14 (0.360) 8.64 (0.340) 1.27 (0.050) 1.07 (0.040) 2.16 (0.085) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) 7.62 (0.300) 7.12 (0.280) 11 17 10 18 9 1 8 2 7 6 5 1.39 (0.055) 1.15 (0.045) 4 0.76 (0.030) 0.51 (0.020) 0.33 (0.013) Rad. 0.08 (0.003) 3 1.65 (0.065) 1.40 (0.055) 0.43 (0.017) 0.18 (0.007 Rad. C4 Underside View PACKAGE VARIANT TABLE Variant A Pads Pads 6, 7, 8, 9, 10, 11, 12, 13 Pads 4, 5 Pads 1, 2, 15, 16, 17, 18 Pads 3, 14 Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Connection Source Gate Drain Not Connected Website: http://www.semelab-tt.com Document Number 8382 Issue 1 Page 3 of 4 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6660C4 SCREENING OPTIONS ORDERING INFORMATION Space Level (JQRS/ESA) and High Reliability options are available in accordance with the High Reliability and Screening Options Handbook available for download from the from the TT electronics Semelab web site. Part number is built from part, package variant and screening level. The part number can be extended to include the additional options as shown below. ESA Quality Level Products are based on the testing procedures specified in the generic ESCC 5000 and in the corresponding part detail specifications. Type - See Electrical Stability Characteristics Table Package Variant - See Mechanical Data Screening Level - See Screening Options (ESA / JQRS) Additional Options: Semelabs QR216 and QR217 processing specifications (JQRS), in conjunction with the companies ISO 9001:2000 approval present a viable alternative to the American MILPRF-19500 space level processing. QR217 (Space Level Quality Conformance) is based on the quality conformance inspection requirements of MIL-PRF19500 groups A (table V), B (table VIa), C (table VII) and also ESA / ESCC 5000 (chart F4) lot validation tests. QR216 (Space Level Screening) is based on the screening requirements of MIL-PRF-19500 (table IV) and also ESA /ESCC 5000 (chart F3). JQRS parts are processed to the device data sheet and screened to QR216 with conformance testing to Q217 groups A and B in accordance with MIL-STD-750 methods and procedures. Additional conformance options are available, for example Pre-Cap Visual Inspection, Buy-Off Visit or Data Packs. These are chargeable and must be specified at the order stage (See Ordering Information). Minimum order quantities may apply. Alternative or additional customer specific conformance or screening requirements would be considered. Contact Semelab sales with enquires. MARKING DETAILS Parts are typically marked with specification number, serial number (or week of seal) as shown in the example below. . Customer specific marking requirements can be arranged at time of order but is approximately limited to three lines of 10 Characters. This is to ensure text remains readable. Example Marking: Customer Pre-Cap Visual Inspection Customer Buy-Off visit Data Pack Solderability Samples Scanning Electron Microscopy Radiography (X-ray) Total Dose Radiation Test .CVP .CVB .DA .SS .SEM .XRAY .RAD MIL-PRF-19500 (QR217) Group B charge Group B destructive mechanical samples Group C charge Group C destructive electrical samples Group C destructive mechanical samples .GRPB .GBDM (12 pieces) .GRPC .GCDE (12 pieces) .GCDM (6 pieces) ESA/ESCC Lot Validation Testing (subgroup 1) charge LVT1 destructive samples (environmental) LVT1 destructive samples (mechanical) Lot Validation Testing (subgroup 2) charge LVT2 endurance samples (electrical) Lot Validation Testing (subgroup 3) charge LVT3 destructive samples (mechanical) .LVT1 .L1DE (15 pieces) .L1DM (15 pieces) .LVT2 .L2D (15 pieces) .LVT3 .L3D (5 pieces) Additional Option Notes: 1) All `Additional Options' are chargeable and must be specified at order stage. 2) When Group B,C or LVT is required, additional electrical and mechanical destructive samples must be ordered 3) All destructive samples are marked the same as other production parts unless otherwise requested. Example ordering information: The following example is for the 2N6660C4 part, package variant A, JQRS screening, additional Group C conformance testing and a Data pack. Part Numbers: 2N6660C4A-JQRS (Include quantity for flight parts) 2N6660C4A-JQRS.GRPC (chargeable conformance option) 2N6660C4A-JQRS.GCDE (charge for destructive parts) 2N6660C4A-JQRS.GCDM (charge for destructive parts) 2N6660C4A-JQRS.DA (charge for Data pack) Customers with any specific requirements (e.g. marking, package or screening) may be supplied with a similar alternative part number (there is maximum 20 character limit to part numbers). Contact Semelab sales with all enquiries Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 8382 Issue 1 Page 4 of 4