Voidless-Hermetically-Sealed Unidirectional
Transient Suppressors
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright © 2007
10-03-2007 REV C
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N6469 thru 1N6476
1N6469 – 1N6476
DESCRIPTION APPEARANCE
This series of industry recognized voidless-hermetically-sealed Unidirectional
Transient Voltage Suppressor (TVS) designs is military qualified to MIL-PRF-
19500/552 and are ideal for high-reliability applications where a failure cannot be
tolerated. They provid e a Working Peak “Standoff” Voltage selection from 5.0 to 51.6
Volts with 1500 W ratings. They are very robust in hard-glass construction and also
use an internal metallurgical bond identified as Category I for high reliability
applications. The 1500 W series is military qualified to MIL-PRF-19500/552. These
devices are also available in a surface mount MELF package configuration by adding
a “US” suffix (see separate data sheet for 1N6469US thru 1N6476AUS). Microsemi
also offers numerous other TVS products to meet higher and lower peak pulse power
and voltage ratings in both through-hole and surface-mount packages.
“G” Package
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES APPLIC ATIONS / BENEFITS
• High surge current and peak pulse power provides
transient voltage protection for sensitive circuits
• Triple-layer passivation
• Internal “Category I” metallurgical bonds
• Voidless hermetically s ealed glass package
• JAN/TX/TXV military qualifications ava ilable per MIL-
PRF-19500/552 by adding JAN, JANTX, or JANTXV
prefix
• Further options for screening in accordance with MIL-
PRF-19500 for JANS by using a “SP” prefi x, e.g.
SP6469, SP6476, etc.
• Surface Mount equivalents are also available in a
square-end-cap MELF configuration with a “US” suffix
(see separate data sheet)
• Military and other high reliability transient protection
• Extremely robust construction
• Working Peak “Standoff” Voltage (VWM) from 5.0 to
51.6 V
• Available as 1500 W Peak Puls e Power (PPP)
• ESD and EFT protection per IEC61 000-4-2 and
IEC61000-4-4 respectively
• Secondary lightning protection per select levels in
IEC61000-4-5
• Flexible axial-leaded mo unting terminals
• Nonsensitive to ESD per MIL-STD-750 Method
1020
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RAT ING S MECHANICAL AND PACKAGING
• Operating & Storage Temperature: -55oC to +175oC
• Peak Pulse Power at 25oC: 1500 Watts @ 10/1000 µs
(also see Figures 1,2 and 4)
• Impulse repetition rate (duty factor): 0.01%
• Forward Surge Current: 130 Amps@ 8.33 ms one-half
sine wave
• Forward Voltage: 1.5 V @ 4 Amps dc and 4.8 V at
100 Amps (pulsed)
• Steady-State Power: 3.0 W @ TA = 25oC (see note
below and Figure 4)
• Thermal Resistance @ 3/8 inch lead length: 50.0 oC/W
• Solder Temperatures: 260oC for 10 s (maximum)
• CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
• TERMINATIONS: Axial-le ads are Tin/Lead (Sn/Pb)
over copper
• MARKING: Body painted and part number, etc.
• POLARITY: Cathode band
• Tape & Reel option: Standard per EIA-296
• Weight: 1270 mg
• See package dimensions on l ast page
NOTE: Steady-state power ratings with reference to ambient are for PC boards where thermal resistance from
mounting point to ambient is sufficiently cont rolled where TJ(MAX) is not exceeded.
Voidless-Hermetically-Sealed Unidirectional
Transient Suppressors
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N6469 thru 1N6476
1N6469 – 1N6476
ELECTRICAL CHARACTERISTICS
TYPE
BREAK
DOWN
VOLTAGE
V(BR)
MIN.
BREAKDOWN
CURRENT
I (BR)
WORKING
PEAK
VOLTAGE
VWM
MAX
LEAKAGE
CURRENT
ID
MAXIMUM
CLAMPING
VOLTAGE
VC
@ 10/1000 µs
MAXIMUM
PEAK PULSE
CURRENT
IPP
@8/20 µs @10/1000 µs
MAXIMUM
TEMP.
COEF. OF
V(BR)
Volts mAdc Vdc μAdc V(pk) A(pk) A(pk) %/oC
1N6469 5.6 50 5 1500 9.0 945 167 -.03, +0.04
1N6470 6.5 50 6 1000 11.0 775 137 0.06
1N6471 13.6 10 12 20 22.6 374 66 0.085
1N6472 16.4 10 15 10 26.5 322 57 0.085
1N6473 27.0 5 24 5 41.4 207 36.5 .096
1N6474 33.0 1 30.5 5 47.5 181 32 .098
1N6475 43.7 1 40.3 5 63.5 135 24 .101
1N6476 54.0 1 51.6 5 78.5 107 19 .103
SYMBOLS & DEFINITI ONS
Symbol Definition
VBR Minimum Breakdown Voltage: The minimu m voltage the device will exhibit at a specified current.
VWM Working Peak Voltage: The maximum peak voltage that can be applied over the operating temperature range.
This is also referred to as Standoff Voltage.
ID Maximum Standoff Current: The maximum current that will flow at the specified voltage and temperature.
VC Maximum clamping voltage at specified IPP (Peak Pulse Current) at the specified pulse conditi ons.
PPP Peak Pulse Power: The peak power dissipation resulting from the peak impulse current IPP.
GRAPHS
Puls e time du ration (tp) is
defined as that point where
IP decays to 50% of peak
value (IPP).
Peak Value
IPP
Pulse current (IP) in percent of IPP
time (t) in milliseconds
FIG. 1 – Non-repetive peak pulse power rating curve FIG. 2 Pulse wave form for exponential surge
NOTE: Peak power defined as peak voltage times peak current for 10/1000 µs
Microsemi
Scottsdale Division Page 2
Copyright © 2007
10-03-2007 REV C 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Voidless-Hermetically-Sealed Unidirectional
Transient Suppressors
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N6469 thru 1N6476
1N6469 – 1N6476
FIGURE 3 T – Temperature – oC
Peak Pulse Power (Ppp), Current (Ipp),
and DC Power in Percent of 25oC Ratin
g
8/20 µs CURRENT IMPULSE WAVEFORM
FIGURE 4
DERATING CURVE
PACKAGE DIMENSIONS Inches [mm]
PACKAGE G
Note: Package G lead dimension diameter is 0.040 inch nominal with –.003 +.002 inch tolerance
Copyright © 2007
10-03-2007 REV C
