MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2N6292 Features * NPN Silicon Complementary Power Transistor This device is designed for use in general purpose amplifier and switching applications. Maximum Ratings* Symbol V CEO V CBO V EBO IC IB TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Peak Base Current Operating Junction Temperature Storage Temperature Rating 70 80 5.0 7.0 10 3.0 -55 to +150 -55 to +150 Unit V V V TO-220 B C A C O C O D A K RJ C Rating Total Device Dissipation Derate above 25OC Thermal Resistance, Junction to Case Max 40 0.32 3.125 Unit W W/OC O C/W F G I Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max ICEO ICEX IEBO J 1 Units 2 3 N OFF CHARACTERISTICS VCEO(sus) E PIN Thermal Characteristics Symbol PD L M A H H Collector-Emitter Breakdown Voltage (1) (IC=100mAdc, IE =0) Collector Cutoff Current (VCB=60Vdc, IE =0) Collector Cutoff Current (VCE=80Vdc, VEB(off)=1.5Vdc) (VCE=70Vdc, V EB(off)=1.5Vdc, TC=125 OC) Emitter Cutoff Current (VEB =5.0Vdc, IC=0) 70 --- Vdc --- 1.0 mAdc ----- 100 2.0 uA mA --- 1.0 mAdc 30 2.3 150 --- --- --- 3.5 --- 3.0 ON CHARACTERISTICS (1) hFE DC Current Gain (V CE=4.0Vdc, IC=2.0Adc) (V CE=4.0Vdc, IC=7.0Adc) VCE(sat) Collector-Emitter Saturation Voltage (IC=7.0Adc, IB =3.0Adc) VBE(on) Base-Emitter On Voltage (IC=7.0Adc, VCE=4.0Vdc) *Indicates JEDEC Registered Data (1) Pulse Test: Pulse Width<300us, Duty Cycle<2.0% Vdc Vdc PIN 1. PIN 2. PIN 3. A B C D E F G H I J K L M N BASE COLLECTOR EMITTER INCHES .560 .625 .380 .420 .100 .135 .230 .270 .380 .420 -----.250 .500 .580 .090 .110 .020 .045 .012 .025 .139 .161 .140 .190 .045 .055 .080 .115 MM 14.22 9.65 2.54 5.84 9.65 -----12.70 2.29 0.51 0.30 3.53 3.56 1.14 2.03 15.88 10.67 3.43 6.86 10.67 6.35 14.73 2.79 1.14 0.64 4.09 4.83 1.40 2.92 www.mccsemi.com Revision: 2 2003/04/30 MCC 2N6292 Symbol Parameter Min Max 4.0 --- --- 250 20 --- Units DYNAMIC CHARACTERISTICS Current Gain- Bandwidth Product (2) (IC=500mAdc, V CE=4.0Vdc, f=1.0MHz ) Cob Output Capacitance (V CE=10Vdc, IE =0, f=1.0MHz) hfe Small-Signal Current Gain (IC=0.5Adc, VCE=4.0Vdc, f=50KHz ) (2) f T=|hfe| X f test fT --- 1.0 20 10 0 TJ = 25C VCC = 30 V IC/IB = 10 0.7 0.5 30 t, TIME (s) PD, POWER DISSIPATION (WATTS) pF 2.0 40 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (C) 140 0.3 0.2 tr 0.1 0.07 0.05 td @ VBE(off) 5.0 V 0.03 0.02 0.07 0.1 160 0.2 0.3 0.5 2.0 1.0 IC, COLLECTOR CURRENT (AMP) 5.0 5.0 7.0 300 2.0 ts 1.0 0.7 0.5 TJ = 25C VCC = 30 V IC/IB = 10 IB1 = IB2 200 C, CAPACITANCE (pF) 3.0 tr 0.3 0.2 0.1 0.07 0.05 0.07 0.1 3.0 Figure 2. Turn-On Time Figure 1. Power Derating t, TIME (s) MHz TJ = 25C Cib 100 70 Cob 50 0.2 1.0 0.3 0.5 2.0 3.0 IC, COLLECTOR CURRENT (AMP) Figure 3. Turn-Off Time 5.0 7.0 30 0.5 1.0 10 20 2.0 3.0 5.0 VR, REVERSE VOLTAGE (VOLTS) 30 50 Figure 4. Capacitance www.mccsemi.com Revision: 2 2003/04/30