2N6292
NPN Silicon
Complementary
Power Transistor
Features
• This device is designed for use in general purpose amplifier and
switching applications.
Maximum Ratings*
Symbol Rating Rating Unit
VCEO
Collector-Emitter Voltage 70 V
VCBO
Collector-Base Voltage 80 V
VEBO
Emitter-Base Voltage 5.0 V
IC Collector Current, Continuous
Peak 7.0
10 A
IB Base Current 3.0 A
TJ Operating Junction Temperature -55 to +150 OC
TSTG
Storage Temperature -55 to +150 OC
Thermal Characteristics
Symbol Rating Max Unit
PD Total Device Dissipation
Derate above 25OC 40
0.32 W
W/OC
RJC Thermal Resistance, Junction to Case 3.125 OC/W
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
VCEO(sus) Collector-Emitter Breakdown Voltage (1)
(IC=100mAdc, IE=0) 70 --- Vdc
ICEO Collector Cutoff Current
(VCB=60Vdc, IE=0) --- 1.0 mAdc
ICEX Collector Cutoff Current
(VCE=80Vdc, VEB(off)=1.5Vdc)
(VCE=70Vdc, VEB(off)=1.5Vdc, TC=125OC) ---
--- 100
2.0 uA
mA
IEBO
Emitter Cutoff Current
(VEB=5.0Vdc, IC=0) --- 1.0 mAdc
ON CHARACTERISTICS (1)
hFE DC Current Gain
(VCE=4.0Vdc, IC=2.0Adc)
(VCE=4.0Vdc, IC=7.0Adc) 30
2.3 150
--- ---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=7.0Adc, IB=3.0Adc) --- 3.5 Vdc
VBE(on) Base-Emitter On Voltage
(IC=7.0Adc, VCE=4.0Vdc) --- 3.0 Vdc
*Indicates JEDEC Registered Data
(1) Pulse Test: Pulse Width<300us, Duty Cycle<2.0%
INCHES MM
A .560 .625 14.22 15.88
B .380 .420 9.65 10.67
C .100 .135 2.54 3.43
D .230 .270 5.84 6.86
E .380 .420 9.65 10.67
F ------ .250 ------ 6.35
G .500 .580 12.70 14.73
H .090 .110 2.29 2.79
I .020 .045 0.51 1.14
J .012 .025 0.30 0.64
K .139 .161 3.53 4.09
L .140 .190 3.56 4.83
M .045 .055 1.14 1.40
N .080 .115 2.03 2.92
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
TO-220
PIN
PIN 1. BASE
PIN 2. COLLECTOR
1 2 3
PIN 3. EMITTER
omponents
20736 Marilla Street Chatsworth
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MCC
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Revision: 2 2003/04/30
Symbol Parameter Min Max Units
DYNAMIC CHARACTERISTICS
fT Current Gain- Bandwidth Product (2)
(IC=500mAdc, VCE=4.0Vdc, f=1.0MHz ) 4.0 --- MHz
Cob Output Capacitance
(VCE=10Vdc, IE=0, f=1.0MHz) --- 250 pF
hfe Small-Signal Current Gain
(IC=0.5Adc, VCE=4.0Vdc, f=50KHz ) 20 --- ---
(2) fT=|hfe| X ftest
MCC
2N6292
40
00 20 40 60 80 100 120 160
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
20
30
140
10
2.0
0.07
Figure 2. Turn–On Time
IC, COLLECTOR CURRENT (AMP)
1.0
0.7
0.5
0.3
0.2
0.1
0.02 0.10.20.30.52.03.07.0
TJ = 25°C
VCC = 30 V
IC/IB = 10
0.05
t, TIME (s)µ
tr
1.05.0
td @ VBE(off) ≈ 5.0 V
0.07
0.03
300
0.5
VR, REVERSE VOLTAGE (VOLTS)
30 3.0 5.0 501.0 2.0
C, CAPACITANCE (pF)
200
70
50
TJ = 25°C
Cib
100
Figure 3. Turn–Off Time
10 20 30
5.0
0.07
Figure 4. Capacitance
IC, COLLECTOR CURRENT (AMP)
3.0
2.0
1.0
0.7
0.5
0.3
0.05 0.1 0.2 0.3 0.5 2.0 3.0 7.0
TJ = 25°C
VCC = 30 V
IC/IB = 10
IB1 = IB2
0.1
t, TIME (s)µ
tr
1.0 5.0
0.2
0.07
ts
Cob
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Revision: 2 2003/04/30
