2N6292
NPN Silicon
Complementary
Power Transistor
Features
• This device is designed for use in general purpose amplifier and
switching applications.
Maximum Ratings*
Symbol Rating Rating Unit
VCEO
Collector-Emitter Voltage 70 V
VCBO
Collector-Base Voltage 80 V
VEBO
Emitter-Base Voltage 5.0 V
IC Collector Current, Continuous
Peak 7.0
10 A
IB Base Current 3.0 A
TJ Operating Junction Temperature -55 to +150 OC
TSTG
Storage Temperature -55 to +150 OC
Thermal Characteristics
Symbol Rating Max Unit
PD Total Device Dissipation
Derate above 25OC 40
0.32 W
W/OC
RJC Thermal Resistance, Junction to Case 3.125 OC/W
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
VCEO(sus) Collector-Emitter Breakdown Voltage (1)
(IC=100mAdc, IE=0) 70 --- Vdc
ICEO Collector Cutoff Current
(VCB=60Vdc, IE=0) --- 1.0 mAdc
ICEX Collector Cutoff Current
(VCE=80Vdc, VEB(off)=1.5Vdc)
(VCE=70Vdc, VEB(off)=1.5Vdc, TC=125OC) ---
--- 100
2.0 uA
mA
IEBO
Emitter Cutoff Current
(VEB=5.0Vdc, IC=0) --- 1.0 mAdc
ON CHARACTERISTICS (1)
hFE DC Current Gain
(VCE=4.0Vdc, IC=2.0Adc)
(VCE=4.0Vdc, IC=7.0Adc) 30
2.3 150
--- ---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=7.0Adc, IB=3.0Adc) --- 3.5 Vdc
VBE(on) Base-Emitter On Voltage
(IC=7.0Adc, VCE=4.0Vdc) --- 3.0 Vdc
*Indicates JEDEC Registered Data
(1) Pulse Test: Pulse Width<300us, Duty Cycle<2.0%
INCHES MM
A .560 .625 14.22 15.88
B .380 .420 9.65 10.67
C .100 .135 2.54 3.43
D .230 .270 5.84 6.86
E .380 .420 9.65 10.67
F ------ .250 ------ 6.35
G .500 .580 12.70 14.73
H .090 .110 2.29 2.79
I .020 .045 0.51 1.14
J .012 .025 0.30 0.64
K .139 .161 3.53 4.09
L .140 .190 3.56 4.83
M .045 .055 1.14 1.40
N .080 .115 2.03 2.92
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
TO-220
PIN
PIN 1. BASE
PIN 2. COLLECTOR
1 2 3
PIN 3. EMITTER
omponents
20736 Marilla Street Chatsworth
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MCC
www.mccsemi.com
Revision: 2 2003/04/30