NTMFS4935N Power MOSFET 30 V, 93 A, Single N-Channel, SO-8 FL Features * * * * Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Applications * CPU Power Delivery, DC-DC Converters Symbol Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS 20 V ID 21.8 A Continuous Drain Current RqJA (Note 1) TA = 25C TA = 100C 13.8 Power Dissipation RqJA (Note 1) TA = 25C PD 2.63 W Continuous Drain Current RqJA 10 s (Note 1) TA = 25C ID 40 A Power Dissipation RqJA 10 s (Note 1) Continuous Drain Current RqJA (Note 2) TA = 100C Steady State PD 8.7 W TA = 25C ID 13 A TA = 25C Continuous Drain Current RqJC (Note 1) TC = 25C Power Dissipation RqJC (Note 1) TC = 25C PD 48 W TA = 25C, tp = 10 ms IDM 275 A IDmax 100 A TJ, TSTG -55 to +150 C ID TC = 85C TA = 25C Operating Junction and Storage Temperature Source Current (Body Diode) 0.93 W 59 IS 44 A dV/dt 6 V/ns Single Pulse Drain-to-Source Avalanche Energy TJ = 25C, VDD = 24 V, VGS = 10 V, IL = 47 Apk, L = 0.1 mH, RG = 25 W EAS 110 mJ Lead Temperature for Soldering Purposes (1/8 from case for 10 s) TL D (5,6) G (4) S (1,2,3) MARKING DIAGRAM D SO-8 FLAT LEAD CASE 488AA STYLE 1 A Y W ZZ S S S G 260 C 1 4935N AYWZZ D D D = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION Device NTMFS4935NT1G NTMFS4935NCT1G NTMFS4935NT3G NTMFS4935NCT3G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu. 2. Surface-mounted on FR4 board using the minimum recommended pad size. May, 2012 - Rev. 10 93 A 4.2 mW @ 4.5 V A 93 Drain to Source DV/DT (c) Semiconductor Components Industries, LLC, 2012 3.2 mW @ 10 V 1 8.2 PD ID MAX N-CHANNEL MOSFET TA = 25C TA = 100C Current Limited by Package RDS(ON) MAX 25 Power Dissipation RqJA (Note 2) Pulsed Drain Current V(BR)DSS 30 V MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter http://onsemi.com Package Shipping SO-8 FL (Pb-Free) 1500 / Tape & Reel SO-8 FL (Pb-Free) 5000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTMFS4935N/D NTMFS4935N THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction-to-Case (Drain) Parameter RqJC 2.6 Junction-to-Ambient - Steady State (Note 3) RqJA 47.5 Junction-to-Ambient - Steady State (Note 4) RqJA 134.8 Junction-to-Ambient - (t 10 s) (Note 3) RqJA 14.4 Unit C/W 3. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu. 4. Surface-mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 V Drain-to-Source Breakdown Voltage (transient) V(BR)DSSt VGS = 0 V, ID(aval) = 19.5 A, Tcase = 25C, ttransient = 100 ns 34 V Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate-to-Source Leakage Current IDSS 15 VGS = 0 V, VDS = 24 V mV/C TJ = 25C 1.0 TJ = 125C 10 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA mA 100 nA 2.2 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance VGS(TH)/TJ RDS(on) 1.63 4.0 VGS = 10 V VGS = 4.5 V Forward Transconductance 1.2 gFS ID = 30 A 2.7 ID = 15 A 2.7 ID = 30 A 3.7 ID = 15 A 3.7 VDS = 1.5 V, ID = 15 A mV/C 3.2 4.2 32 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Capacitance Ratio CRSS / CISS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD Total Gate Charge VGS = 0 V, f = 1 MHz, VDS = 15 V VGS = 0 V, f = 1 MHz, VDS = 15 V 3579 4850 1264 1710 39 59 0.011 0.022 pF 22 VGS = 4.5 V, VDS = 15 V; ID = 30 A 5.6 10.2 nC 3.0 QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 49.4 nC SWITCHING CHARACTERISTICS (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) 16.3 tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 20 27.5 6.6 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns NTMFS4935N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) 11.2 tr td(OFF) VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 18.7 ns 28.3 12.1 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25C 0.85 TJ = 125C 0.72 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 30 A 1.1 V 44.4 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A 21.6 ns 22.8 QRR 45 nC Source Inductance LS 0.65 nH Drain Inductance LD 0.005 nH Gate Inductance LG 1.84 nH Gate Resistance RG PACKAGE PARASITIC VALUES TA = 25C 1.1 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 1.4 W NTMFS4935N TYPICAL CHARACTERISTICS 7V 140 160 100 3.4 V 80 3.2 V 60 3.0 V 40 2.8 V 20 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0 140 3.8 V 3.6 V 4.5 120 TJ = 25C VGS = 4.0 V 0 1 2 3 120 100 80 40 0 4 TJ = 125C TJ = -55C 1.0 1.5 2.5 2.0 3.0 3.5 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics ID = 30 A TJ = 25C 0.008 0.007 0.006 0.005 0.004 3.0 4.0 5.0 6.0 7.0 8.0 9.0 VGS (V) 10 0.0050 0.0048 0.0046 0.0044 0.0042 0.0040 0.0038 0.0036 0.0034 0.0032 0.0030 0.0028 0.0026 0.0024 0.0022 0.0020 TJ = 25C VGS = 4.5 V VGS = 10 V 20 40 60 80 100 120 140 160 Figure 4. On-Resistance vs. Drain Current and Gate Voltage 10,000 VGS = 0 V TJ = 150C IDSS, LEAKAGE (nA) 1.9 1.8 ID = 30 A 1.7 VGS = 10 V 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 4.0 ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. VGS RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) TJ = 25C 60 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 0.014 0.013 0.012 0.011 0.010 0.009 0.003 0.002 2.0 VDS = 10 V 20 2.4 V 2.6 V RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 4.2 V 10 V 160 ID, DRAIN CURRENT (A) 180 1000 25 50 75 100 125 150 TJ = 125C TJ = 85C 100 10 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 4 30 NTMFS4935N 4500 C, CAPACITANCE (pF) 4000 VGS = 0 V TJ = 25C Ciss 3500 VGS, GATE-TO-SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS 3000 2500 2000 Coss 1500 1000 500 0 Crss 0 5 10 15 20 25 30 8 7 6 5 Qgd 4 Qgs 3 TJ = 25C VDD = 15 V VGS = 10 V ID = 30 A 2 1 0 0 5 15 10 20 25 30 35 40 50 45 Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 30 IS, SOURCE CURRENT (A) td(off) tf 100 t, TIME (ns) 9 Qg, TOTAL GATE CHARGE (nC) VDD = 15 V ID = 15 A VGS = 10 V tr td(on) 10 1 10 TJ = 125C 15 10 TJ = 25C 5 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 10 ms 100 ms 1 ms 10 ms 0 VGS 20 V Single Pulse TC = 25C RDS(on) Limit Thermal Limit Package Limit 0.1 dc 1 10 EAS, SINGLE PULSE DRAIN-TO- SOURCE AVALANCHE ENERGY (mJ) 0.01 0.01 20 VSD, SOURCE-TO-DRAIN VOLTAGE (V) 10 0.1 VGS = 0 V RG, GATE RESISTANCE (W) 100 1 25 0 100 1000 ID, DRAIN CURRENT (A) QT VDS, DRAIN-TO-SOURCE VOLTAGE (V) 1000 1 11 10 100 130 120 110 100 90 80 70 60 50 40 30 20 10 0 ID = 29 A 25 50 75 100 125 VDS, DRAIN-TO-SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 150 NTMFS4935N TYPICAL CHARACTERISTICS 1000 Duty Cycle = 50% 10 20% 10% 5% 2% 1 1% 0.1 0.01 Single Pulse 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 PULSE TIME (sec) Figure 13. Thermal Response 70 60 50 GFS (S) R(t) (C/W) 100 40 30 20 10 0 0 10 20 30 40 50 60 70 ID (A) Figure 14. GFS vs. ID http://onsemi.com 6 80 90 100 100 1000 NTMFS4935N PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO-8FL) CASE 488AA ISSUE G 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D 2 A B D1 2X 0.20 C 4X E1 2 3 q E 2 1 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q c A1 4 TOP VIEW C 3X e 0.10 C SEATING PLANE DETAIL A A STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 0.10 C SIDE VIEW SOLDERING FOOTPRINT* DETAIL A 3X 8X 0.10 C A B 0.05 c 4X e/2 1 4 0.965 K G 0.750 1.000 L PIN 5 (EXPOSED PAD) 4X 1.270 b MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 --- 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.50 4.90 5.10 3.50 --- 4.22 6.15 BSC 5.50 5.80 6.10 3.45 --- 4.30 1.27 BSC 0.51 0.61 0.71 1.20 1.35 1.50 0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ --- 12 _ 1.330 2X 0.905 2X E2 L1 M 0.495 4.530 3.200 0.475 D2 2X BOTTOM VIEW 1.530 4.560 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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