© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 10
1Publication Order Number:
NTMFS4935N/D
NTMFS4935N
Power MOSFET
30 V, 93 A, Single N−Channel, SO−8 FL
Features
•Low RDS(on) to Minimize Conduction Losses
•Low Capacitance to Minimize Driver Losses
•Optimized Gate Charge to Minimize Switching Losses
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
•CPU Power Delivery, DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 30 V
Gate−to−Source Voltage VGS ±20 V
Continuous Drain
Current RqJA
(Note 1)
Steady
State
TA = 25°CID21.8 A
TA = 100°C 13.8
Power Dissipation
RqJA (Note 1)
TA = 25°C PD2.63 W
Continuous Drain
Current RqJA ≤
10 s (Note 1)
TA = 25°CID40 A
TA = 100°C 25
Power Dissipation
RqJA ≤ 10 s
(Note 1)
TA = 25°C PD8.7 W
Continuous Drain
Current RqJA
(Note 2)
TA = 25°CID13 A
TA = 100°C 8.2
Power Dissipation
RqJA (Note 2)
TA = 25°C PD0.93 W
Continuous Drain
Current RqJC
(Note 1)
TC = 25°CID93 A
TC = 85°C 59
Power Dissipation
RqJC (Note 1)
TC = 25°C PD48 W
Pulsed Drain
Current
TA = 25°C, tp = 10 msIDM 275 A
Current Limited by Package TA = 25°C IDmax 100 A
Operating Junction and Storage
Temperature
TJ,
TSTG
−55 to
+150
°C
Source Current (Body Diode) IS44 A
Drain to Source DV/DT dV/dt6 V/ns
Single Pulse Drain−to−Source Avalanche
Energy TJ = 25°C, VDD = 24 V, VGS = 10 V,
IL = 47 Apk, L = 0.1 mH, RG = 25 W
EAS 110 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
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A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
4935N
AYWZZ
V(BR)DSS RDS(ON) MAX ID MAX
30 V
3.2 mW @ 10 V
93 A
4.2 mW @ 4.5 V
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
S
S
S
G
D
D
D
D
G (4)
S (1,2,3)
N−CHANNEL MOSFET
D (5,6)
1
Device Package Shipping†
ORDERING INFORMATION
NTMFS4935NT1G SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4935NT3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
NTMFS4935NCT1G
NTMFS4935NCT3G
NTMFS4935N
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2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain) RqJC 2.6
°C/W
Junction−to−Ambient – Steady State (Note 3) RqJA 47.5
Junction−to−Ambient – Steady State (Note 4) RqJA 134.8
Junction−to−Ambient – (t ≤ 10 s) (Note 3) RqJA 14.4
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA30 V
Drain−to−Source Breakdown Voltage
(transient)
V(BR)DSSt VGS = 0 V, ID(aval) = 19.5 A,
Tcase = 25°C, ttransient = 100 ns
34 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
15 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 24 V
TJ = 25°C 1.0
mA
TJ = 125°C 10
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.2 1.63 2.2 V
Negative Threshold Temperature Coefficient VGS(TH)/TJ4.0 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 30 A 2.7 3.2
mW
ID = 15 A 2.7
VGS = 4.5 V ID = 30 A 3.7 4.2
ID = 15 A 3.7
Forward Transconductance gFS VDS = 1.5 V, ID = 15 A 32 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance CISS
VGS = 0 V, f = 1 MHz, VDS = 15 V
3579 4850
pF
Output Capacitance COSS 1264 1710
Reverse Transfer Capacitance CRSS 39 59
Capacitance Ratio CRSS /
CISS
VGS = 0 V, f = 1 MHz, VDS = 15 V 0.011 0.022
Total Gate Charge QG(TOT)
VGS = 4.5 V, VDS = 15 V; ID = 30 A
22
nC
Threshold Gate Charge QG(TH) 5.6
Gate−to−Source Charge QGS 10.2
Gate−to−Drain Charge QGD 3.0
Total Gate Charge QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 49.4 nC
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time td(ON)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
16.3
ns
Rise Time tr20
Turn−Off Delay Time td(OFF) 27.5
Fall Time tf6.6
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
NTMFS4935N
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3
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter UnitMaxTypMinTest ConditionSymbol
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time td(ON)
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
11.2
ns
Rise Time tr18.7
Turn−Off Delay Time td(OFF) 28.3
Fall Time tf12.1
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 30 A
TJ = 25°C 0.85 1.1
V
TJ = 125°C 0.72
Reverse Recovery Time tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
44.4
ns
Charge Time ta21.6
Discharge Time tb22.8
Reverse Recovery Charge QRR 45 nC
PACKAGE PARASITIC VALUES
Source Inductance LS
TA = 25°C
0.65 nH
Drain Inductance LD0.005 nH
Gate Inductance LG1.84 nH
Gate Resistance RG1.1 1.4 W
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
NTMFS4935N
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4
TYPICAL CHARACTERISTICS
10 V
4.5
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
43210
0
20
40
60
100
120
160
180
4.03.53.02.01.51.0
0
20
40
60
160
Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
VGS (V) ID, DRAIN CURRENT (A)
9.08.07.0 106.05.04.02.0
0.002
0.003
0.004
0.005
0.007
0.009
0.010
0.014
14012010080604020
0.0020
0.0024
0.0040
0.0044
0.0048
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
15012510075250−25−50
0.7
0.8
1.0
1.2
1.3
1.5
1.6
1.7
30252015105
10
100
1000
10,000
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RES-
ISTANCE (NORMALIZED)
IDSS, LEAKAGE (nA)
80
140
VGS = 4.0 V
7 V
4.2 V
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
2.6 V 2.4 V
TJ = 25°CVDS = 10 V
TJ = 25°C
TJ = 125°C
TJ = −55°C
0.008
0.0032
160
ID = 30 A
TJ = 25°C
VGS = 4.5 V
TJ = 25°C
VGS = 10 V
50
ID = 30 A
VGS = 10 V
VGS = 0 V
TJ = 85°C
TJ = 150°C
TJ = 125°C
2.5
80
100
120
140
0.006
0.012
0.013
0.011
0.9
1.1
1.4
1.9
0.0028
0.0036
0.0046
0.0050
0.0022
0.0026
0.0042
0.0034
0.0030
0.0038
3.0
1.8
0.6
0.5
NTMFS4935N
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5
TYPICAL CHARACTERISTICS
QT
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
25201510 3050
0
500
1000
1500
4500
45353025201050
0
1
2
4
7
8
9
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
RG, GATE RESISTANCE (W)VSD, SOURCE−TO−DRAIN VOLTAGE (V)
100101
1
10
100
1000
0.90.80.7 1.00.60.50.4
0
5
10
15
20
25
30
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C)
1001010.01
0.01
1
10
100
1000
150125100755025
0
10
40
60
80
110
130
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
IS, SOURCE CURRENT (A)
ID, DRAIN CURRENT (A)
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
VGS = 0 V
TJ = 25°C
Ciss
Coss
Crss
15 40 50
3
6
11
TJ = 25°C
Qgs
Qgd
VDD = 15 V
VGS = 10 V
ID = 30 A
VDD = 15 V
ID = 15 A
VGS = 10 V
td(off)
td(on)
tr
tf
TJ = 25°C
TJ = 125°C
VGS = 0 V
0 ≤ VGS ≤ 20 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
100 ms
10 ms
1 ms
dc
ID = 29 A
2000
2500
3000
3500
4000
20
30
50
70
90
100
120
5
10
10 ms
0.1
0.1
NTMFS4935N
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6
TYPICAL CHARACTERISTICS
Figure 13. Thermal Response
PULSE TIME (sec)
0.010.0010.00010.000010.000001
0.01
0.1
1
10
100
1000
R(t) (°C/W)
0.1 1 10 100 1000
10%
Duty Cycle = 50%
20%
5%
2%
1%
Single Pulse
Figure 14. GFS vs. ID
ID (A)
4030100
0
10
20
30
40
50
70
GFS (S)
20 10050
60
60 70 80 90
NTMFS4935N
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7
PACKAGE DIMENSIONS
M3.00 3.40
q0 −−−
_
3.80
12
_
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
1234
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1 q
D
E
2
2
B
A
0.20 C
0.20 C
2 X
2 X
DIM MIN NOM
MILLIMETERS
A0.90 1.00
A1 0.00 −−−
b0.33 0.41
c0.23 0.28
D5.15 BSC
D1 4.50 4.90
D2 3.50 −−−
E6.15 BSC
E1 5.50 5.80
E2 3.45 −−−
e1.27 BSC
G0.51 0.61
K1.20 1.35
L0.51 0.61
L1 0.05 0.17
A
0.10 C
0.10 C
DETAIL A
14
L1
e/2
8X
D2
G
E2
K
b
A0.10 B
C
0.05 cL
DETAIL A
A1
e
3 X
c
4 X
C
SEATING
PLANE
MAX
1.10
0.05
0.51
0.33
5.10
4.22
6.10
4.30
0.71
1.50
0.71
0.20
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
M
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.270
2X
0.750
1.000
0.905
0.475
4.530
1.530
4.560
0.495
3.200
1.330
0.965
2X
2X
3X 4X
4X
PIN 5
(EXPOSED PAD)
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NTMFS4935N/D
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