© Semiconductor Components Industries, LLC, 2018
May, 2018 − Rev. 1
1Publication Order Number:
MOC3023M/D
MOC3010M, MOC3011M,
MOC3012M, MOC3020M,
MOC3021M, MOC3022M,
MOC3023M
6-Pin DIP Random-Phase
Triac Driver Output
Optocoupler
(250/400 V Peak)
Description
The MOC301XM and MOC302XM series are optically isolated
triac driver devices. These devices contain a GaAs infrared emitting
diode and a light activated silicon bilateral switch, which functions
like a triac. They are designed for interfacing between electronic
controls and power triacs to control resistive and inductive loads for
115 VAC operations.
Features
•Excellent IFT Stability − IR Emitting Diode Has Low Degradation
•Peak Blocking Voltage
♦250 V, MOC301XM
♦400 V, MOC302XM
•Safety and Regulatory Approvals
♦UL1577, 4,170 VACRMS for 1 Minute
♦DIN EN/IEC60747−5−5
•These are Pb−Free Devices
Applications
•Industrial Controls
•Solenoid/Valve Controls
•Traffic Lights
•Static AC Power Switch
•Vending Machines
•Incandescent Lamp Dimmers
•Solid State Relay
•Motor Control
•Lamp Ballasts
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PDIP6 8.51x6.35, 2.54P
CASE 646BZ
See detailed ordering and shipping information on page 8 of
this data sheet.
ORDERING INFORMATION
PDIP6 8.51x6.35, 2.54P
CASE 646BY
PDIP6 8.51x6.35, 2.54P
CASE 646BX
Figure 1. Schematic
MAIN TERM.
NC*
N/C
*DO NOT CONNECT
(TRIAC SUBSTRATE)
1
2
3
ANODE
CATHODE
4
5
6MAIN TERM.
MOC3010M, MOC3011M, MOC3012M, MOC3020M, MOC3021M, MOC3022M, MOC3023M
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2
SAFETY AND INSULATION RATINGS
As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with
the safety ratings shall be ensured by means of protective circuits.
Parameter Characteristics
Installation Classifications per DIN VDE 0110/1.89 Table 1, For
Rated Mains Voltage
< 150 VRMS I–IV
< 300 VRMS I–IV
Climatic Classification 40/85/21
Pollution Degree (DIN VDE 0110/1.89) 2
Comparative Tracking Index 175
Symbol Parameter Value Unit
VPR Input−to−Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test
with tm = 10 s, Partial Discharge < 5 pC 1275 Vpeak
Input−to−Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test
with tm = 1 s, Partial Discharge < 5 pC 1594 Vpeak
VIORM Maximum Working Insulation Voltage 850 Vpeak
VIOTM Highest Allowable Over−Voltage 6000 Vpeak
External Creepage ≥ 7mm
External Clearance ≥ 7mm
External Clearance (for Option TV, 0.4” Lead Spacing) ≥ 10 mm
DTI Distance Through Insulation (Insulation Thickness) ≥ 0.5 mm
RIO Insulation Resistance at TS, VIO = 500 V > 109W
MOC3010M, MOC3011M, MOC3012M, MOC3020M, MOC3021M, MOC3022M, MOC3023M
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3
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Symbol Parameters Device Value Unit
Total Device
TSTG Storage Temperature All −40 to 150 °C
TOPR Operating Temperature All −40 to 85 °C
TJJunction Temperature Range All −40 to 100 °C
TSOL Lead Solder Temperature All 260 for 10 seconds °C
PD
Total Device Power Dissipation at 25°C Ambient All 330 mW
Derate Above 25°C 4.4 mW/°C
Emitter
IFContinuous Forward Current All 60 mA
VRReverse Voltage All 3 V
PD
Total Power Dissipation at 25°C Ambient All 100 mW
Derate Above 25°C 1.33 mW/°C
Detector
VDRM Off−State Output Terminal Voltage MOC3010M, MOC3011M,
MOC3012M
250 V
MOC3020M, MOC3021M,
MOC3022M, MOC3023M 400
ITSM Peak Repetitive Surge Current (PW = 100 ms, 120 pps) All 1 A
PD
Total Power Dissipation at 25°C Ambient All 300 mW
Derate Above 25°C 4 mW/°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
MOC3010M, MOC3011M, MOC3012M, MOC3020M, MOC3021M, MOC3022M, MOC3023M
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4
ELECTRICAL CHARACTERISTICS
TA = 25°C unless otherwise specified
INDIVIDUAL COMPONENT CHARACTERISTICS
Symbol Parameters Test Conditions Device Min. Typ. Max. Unit
Emitter
VFInput Forward Voltage IF = 10 mA All 1.15 1.50 V
IRReverse Leakage Current VR = 3 V, TA = 25°C All 0.01 100 mA
Detector
IDRM Peak Blocking Current, Either Direction Rated VDRM, IF = 0(1) All 10 100 nA
VTM Peak On−State Voltage, Either Direction ITM = 100 mA peak, IF = 0 All 1.8 3.0 V
1. Test voltage must be applied within dv/dt rating.
TRANSFER CHARACTERISTICS
Symbol DC Characteristics Test Conditions Device Min. Typ. Max. Unit
IFT LED Trigger Current Voltage = 3 V(2) MOC3020M 30 mA
MOC3010M 15
MOC3021M
MOC3011M 10
MOC3022M
MOC3012M 5
MOC3023M
IHHolding Current, Either Direction All 100 mA
2. All devices are guaranteed to trigger at an IF value less than or equal to max IFT
. Therefore, recommended operating IF lies between max
IFT (30 mA for MOC3020M, 15 mA for MOC3010M and MOC3021M, 10 mA for MOC3011M and MOC3022M, 5 mA for MOC3012M and
MOC3023M) and absolute maximum IF (60 mA).
ISOLATION CHARACTERISTICS
Symbol Parameters Test Conditions Device Min. Typ. Max. Unit
VISO Isolation Voltage (3) t = 1 Minute All 4170 VACRMS
3. Isolation voltage, VISO, is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are common, and pins 4, 5 and 6 are
common.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
MOC3010M, MOC3011M, MOC3012M, MOC3020M, MOC3021M, MOC3022M, MOC3023M
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5
TYPICAL PERFORMANCE CURVES
Figure 2. LED Forward Voltage vs. Forward
Current
Figure 3. On−State Characteristics
Figure 4. Trigger Current vs. Ambient
Temperature
Figure 5. LED Current Required to Trigger vs.
LED Pulse Width
Figure 6. dv/dt vs. Temperature Figure 7. Leakage Current, IDRM vs.
Temperature
IF − LED FORWARD CURRENT (mA)
1 10 100
VF − FORWARD VOLTAGE (V)
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
TA = −55
oC
TA = 25oC
TA = 100oC
VTM − ON−STATE VOLTAGE (V)
−3−2−10123
ITM − ON−STATE CURRENT (mA)
−800
−600
−400
−200
0
200
400
600
800
AMBIENT TEMPERATURE − T
A (oC)
−40 −20020406080100
ITM −TRIGGER CURRENT (NORMALIZED)
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
NORMALIZED TO T
A = 25_CPWin − LED TRIGGER WIDTH (
〈ms)
1 2 5 10 20 50 100
IFT −TRIGGER CURRENT (NORMALIZED)
0
5
10
15
20
25
NORMALIZED TO:
PWin ≥ 100 ms
TA − AMBIENT TEMPERATURE (oC)
25 30 40 6050 70 80 90 100
STATIC dv/dt (V/ms)
0
2
4
6
8
10
12
STATIC dv/dt
CIRCUIT IN FIGURE 8
TA − AMBIENT TEMPERATURE (oC)
−40 −20020406080100
IDRM − LEAKAGE CURRENT (nA)
0.1
1
10
100
1000
10000
MOC3010M, MOC3011M, MOC3012M, MOC3020M, MOC3021M, MOC3022M, MOC3023M
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6
Figure 8. Static dv/dt Test Circuit
Note:
This optoisolator should not be used to drive a load directly. It is intended to be a trigger device only.
Vdc
400 V (MOC302X)
250 V (MOC301X)
R = 10 kW
CTEST
PROBE
PULSE
INPUT MERCURY
WETTED
RELAY
RTEST
DUT
252 V (MOC302X)
158 V (MOC301X)
0 VOLTS
APPLIED VOLTAGE
WAVEFORM
Vmax =
dv/dt = 0.63 Vmax = 252
RC
RC RC
400 V (MOC302X)
= 250 V (MOC301X)
(MOC302X)
=158
RC (MOC301X)
3. The worst−case condition for static dv/dt is established
by triggering the DUT with a normal LED input current,
then removing the current. The variable RTEST allows
the dv/dt to be gradually increased until the DUT
continues to trigger in response to the applied voltage
pulse, even after the LED current has been removed.
The dv/dt is then decreased until the DUT stops
triggering. RC is measured at this point and recorded.
X100
SCOPE
1. The mercury wetted relay provides a high speed
repeated pulse to the D.U.T.
2. 100x scope probes are used, to allow high speeds and
voltages.
t
Figure 9. Resistive Load
VCC
Rin 1
2
3
6
5
4
120 V
60 Hz
180 W
RL
MOC3010M
MOC3011M
MOC3012M
Figure 10. Inductive Load with Sensitive Gate Triac (IGT 3 15 mA)
VCC
Rin 1
2
3
6
5
4
0.1 mF
180 W
C1
2.4 kW
ZL
MOC3010M
MOC3011M
MOC3012M
120 V
60 Hz
MOC3010M, MOC3011M, MOC3012M, MOC3020M, MOC3021M, MOC3022M, MOC3023M
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7
Figure 11. Inductive Load with Sensitive Gate Triac (IGT 3 15 mA)
VCC
Rin 1
2
3
6
5
4
0.2 mF
180 W
C1
1.2 kW
ZL
MOC3010M
MOC3011M
MOC3012M
120 V
60 Hz
Figure 12. Typical Application Circuit
VCC
Rin 1
2
3
6
5
4
0.05 mF
0.01 mF
LOAD
360 W
39
470 W
HOT
GROUND
MOC3020M
MOC3021M
MOC3022M
MOC3023M 240 VAC
In this circuit the “hot” side of the line is switched and the load connected to the cold or ground side.
The 39 W resistor and 0.01 mF capacitor are for snubbing of the triac, and the 470 W resistor and 0.05 mF
capacitor are for snubbing the coupler. These components may or may not be necessary depending upon
the particular and load used.
Reflow Profile
Figure 13. Reflow Profile
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
_C
Time (s)
0 60 180120 270
260_C
>245_C = 42 s
_C = 90 s
360
1.822_C/s Ramp−up Rate
33 s
MOC3010M, MOC3011M, MOC3012M, MOC3020M, MOC3021M, MOC3022M, MOC3023M
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8
ORDERING INFORMATION
Part Number Package Shipping
MOC3010M DIP 6−Pin 50 Units / Tube
MOC3010SM SMT 6−Pin (Lead Bend) 50 Units / Tube
MOC3010SR2M SMT 6−Pin (Lead Bend) 1000 Units / Tape & Reel
MOC3010VM DIP 6−Pin, DIN EN/IEC60747−5−5 Option 50 Units / Tube
MOC3010SVM SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option 50 Units / Tube
MOC3010SR2VM SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option 1000 Units / Tape & Reel
MOC3010TVM DIP 6−Pin, 0.4” Lead Spacing, DIN EN/IEC60747−5−5 Option 50 Units / Tube
NOTE: The product orderable part number system listed in this table also applies to the MOC3011M, MOC3012M, MOC3020M,
MOC3021M, MOC3022M, and MOC3023M product families.
MARKING INFORMATION
Figure 14. Top Marking
MOC3010
1
2
6
43 5
V X YY Q
ON
Top Mark Definitions
1ON Semiconductor Logo
2Device Number
3DIN EN/IEC60747−5−5 Option (only appears on component ordered with this option)
4One−Digit Year Code, e.g., ‘5’
5Two−Digit Work Week, Ranging from ‘01’ to ‘53’
6Assembly Package Code
PDIP6 8.51x6.35, 2.54P
CASE 646BX
ISSUE O DATE 31 JUL 201
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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1
© Semiconductor Components Industries, LLC, 2002
October, 2002 − Rev. 0 Case Outline Number:
XXX
DOCUMENT NUMBER:
STATUS:
NEW STANDARD:
DESCRIPTION:
98AON13449G
ON SEMICONDUCTOR STANDARD
PDIP6 8.51X6.35, 2.54P
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© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. O Case Outline Number
:
646BX
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MECHANICAL CASE OUTLINE
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© Semiconductor Components Industries, LLC, 2002
October, 2002 − Rev. 0 Case Outline Number:
XXX
DOCUMENT NUMBER:
STATUS:
NEW STANDARD:
DESCRIPTION:
98AON13450G
ON SEMICONDUCTOR STANDARD
PDIP6 8.51X6.35, 2.54P
Electronic versions are uncontrolled except when
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versions are uncontrolled except when stamped
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© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. O Case Outline Number
:
646BY
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to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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PDIP6 8.51x6.35, 2.54P
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ISSUE O DATE 31 JUL 201
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MECHANICAL CASE OUTLINE
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© Semiconductor Components Industries, LLC, 2002
October, 2002 − Rev. 0 Case Outline Number:
XXX
DOCUMENT NUMBER:
STATUS:
NEW STANDARD:
DESCRIPTION:
98AON13451G
ON SEMICONDUCTOR STANDARD
PDIP6 8.51X6.35, 2.54P
Electronic versions are uncontrolled except when
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versions are uncontrolled except when stamped
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ISSUE REVISION DATE
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SEMICONDUCTOR. REQ. BY I. CAMBALIZA. 31 JUL 2016
© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. O Case Outline Number
:
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
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nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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