
Electrical Characteristics @TA = 25°C unless otherwise specified
DS30269 Rev. 8 - 2
2 of 4
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MMBT2907AT
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Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage V(BR)CBO -60 ⎯ V IC = -10μA, IE = 0
Collector-Emitter Breakdown Voltage V(BR)CEO -60 ⎯ V IC = -10mA, IB = 0
Emitter-Base Breakdown Voltage V(BR)EBO -5.0 ⎯ V IE = -10μA, IC = 0
Collector Cutoff Current ICBO ⎯ -10 nA
μA
VCB = -50V, IE = 0
VCB = -50V, IE = 0, TA = 125°C
Collector Cutoff Current ICEX ⎯ -50 nA VCE = -30V, VEB(OFF) = -0.5V
Base Cutoff Current IBL ⎯ -50 nA VCE = -30V, VEB(OFF) = -0.5V
ON CHARACTERISTICS (Note 5)
DC Current Gain hFE
75
100
100
100
50
⎯
⎯
⎯
300
⎯
⎯
IC = -100µA, VCE = -10V
IC = -1.0mA, VCE = -10V
IC = -10mA, VCE = -10V
IC = -150mA, VCE = -10V
IC = -500mA, VCE = -10V
Collector-Emitter Saturation Voltage VCE(SAT) ⎯ -0.4
-1.6 V IC = -150mA, IB = -15mA
IC = -500mA, IB = -50mA
Base-Emitter Saturation Voltage VBE(SAT) ⎯ -1.3
-2.6 V IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo ⎯ 8.0 pF VCB = -10V, f = 1.0MHz, IE = 0
Input Capacitance Cibo — 30 pF VEB = -2.0V, f = 1.0MHz, IC = 0
Current Gain-Bandwidth Product fT 200 ⎯ MHz VCE = -20V, IC = -50mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Turn-On Time toff ⎯ 45 ns
Delay Time td ⎯ 10 ns
Rise Time tr ⎯ 40 ns
VCC = -30V, IC = -150mA,
IB1 = -15mA
Turn-Off Time toff ⎯ 100 ns
Storage Time ts ⎯ 80 ns
Fall Time tf ⎯ 30 ns
VCC = -6.0V, IC = -150mA,
IB1 = IB2 = -15mA
Notes: 5. Short duration pulse test used to minimize self-heating effect.
0 40 80 120 160 200
T , AMBIENT TEMPERATURE (ºC)
Fig. 1, Power Derating Curve, Total Package
A
,
WE
DISSI
A
I
(mW)
d
0
50
100
150
200
Note 1
,
A
A
I
AN
E (
T
V , REVERSE VOLTAGE (V)
Fig. 2, Typical Capacitance Characteristics
R
Cobo
Cibo
f = 1MHz