APT6035BVFR APT6035SVFR 600V 18A POWER MOS V(R) FREDFET 0.350 BVFR D3PAK Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. TO-247 SVFR * Faster Switching * Avalanche Energy Rated * Lower Leakage * FAST RECOVERY BODY DIODE D G * TO-247 or Surface Mount D3PAK Package S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25C unless otherwise specified. Parameter APT6035BVFR_SVFR UNIT 600 Volts Drain-Source Voltage 18 Continuous Drain Current @ TC = 25C Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 VGSM Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 280 Watts Linear Derating Factor 2.24 W/C PD TJ,TSTG 1 72 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR EAS 1 -55 to 150 Amps 18 1 Single Pulse Avalanche Energy C 300 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Volts 30 4 mJ 1210 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) 600 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 9A) TYP MAX UNIT Volts 0.350 Ohms Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) 250 Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125C) 1000 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) 100 nA 4 Volts Gate Threshold Voltage (VDS = VGS, ID = 1mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com A 7-2004 Characteristic / Test Conditions 050-7269 Rev A Symbol APT6035BVFR_SVFR DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX 3450 4140 Ciss Input Capacitance Coss VGS = 0V Output Capacitance VDS = 25V 403 565 Reverse Transfer Capacitance f = 1 MHz 155 235 Crss Qg 3 Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time VGS = 10V 140 210 VDD = 300V 19 30 ID = 18A @ 25C 68 100 VGS = 15V 12 24 VDD = 300V 12 24 ID = 18A @ 25C 40 60 RG = 1.6 8 16 TYP MAX UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM Characteristic / Test Conditions MIN 18 Continuous Source Current (Body Diode) UNIT Amps Pulsed Source Current 1 (Body Diode) 72 VSD Diode Forward Voltage 2 (VGS = 0V, IS = -18A) 1.3 Volts dv/ Peak Diode Recovery 15 V/ns dt dv/ dt 5 t rr Reverse Recovery Time (IS = -18A, di/dt = 100A/s) Tj = 25C 250 Tj = 125C 500 Q rr Reverse Recovery Charge (IS = -18A, di/dt = 100A/s) Tj = 25C 1.8 Tj = 125C 5.2 IRRM Peak Recovery Current (IS = -18A, di/dt = 100A/s) Tj = 25C 11 Tj = 125C 18 ns C Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX 0.45 RJC Junction to Case RJA Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 40 0.5 0.2 0.1 0.05 0.01 0.005 0.02 Note: 0.01 PDM Z JC, THERMAL IMPEDANCE (C/W) 050-7269 Rev A 7-2004 D=0.5 0.05 SINGLE PULSE t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 0.001 10-5 10-4 C/W 4 Starting Tj = +25C, L = 7.47mH, RG = 25, Peak IL = 18A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID18A di/dt 700A/s VR 600V TJ 150C APT Reserves the right to change, without notice, the specifications and information contained herein. 0.1 UNIT 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 10 Typical Performance Curves APT6035BVFR_SVFR 50 6.5V VGS=7V, 10V & 15V 40 6V 30 5.5V 20 5V 10 ID, DRAIN CURRENT (AMPERES) VGS=10V & 15V 40 6V 30 5.5V 20 5V 10 4.5V 4.5V 0 0 50 1.4 40 30 20 TJ = +125C 10 TJ = +25C 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 16 12 8 4 NORMALIZED TO = 10V @ 0.5 I [Cont.] D 1.3 1.2 VGS=10V 1.1 VGS=20V 1.0 0.9 0 10 20 30 40 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 25 I D = 0.5 I D V GS 1.00 0.95 -50 1.2 [Cont.] = 10V 2.0 1.5 1.0 0.5 0.0 -50 1.05 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 2.5 1.10 0.90 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) GS 1.15 20 0 V 1.1 1.0 0.9 0.8 7-2004 0 TJ = -55C 0 5 10 15 20 25 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) 0 50 100 150 200 250 300 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 7V 6.5V 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-7269 Rev A ID, DRAIN CURRENT (AMPERES) 50 100 OPERATION HERE LIMITED BY RDS (ON) 5,000 C, CAPACITANCE (pF) 10 1mS 5 10mS 1 100mS DC TC =+25C TJ =+150C SINGLE PULSE 0.5 0.1 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 10,000 100S 20 I =I D D VDS=120V VDS=300V 12 VDS=480V 8 4 0 1,000 500 50 100 150 200 250 300 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 100 50 TJ =+150C 5 3 Drain (Heat Sink) 5.38 (.212) 6.20 (.244) 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 20.80 (.819) 21.46 (.845) Drain 7-2004 050-7269 Rev A D PAK Package Outline (SVFR) 15.49 (.610) 16.26 (.640) 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 2.21 (.087) 2.59 (.102) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) Gate Drain Source 15.95 (.628) 16.05 (.632) 1.04 (.041) 1.15 (.045) 13.41 (.528) 13.51 (.532) 11.51 (.453) 11.61 (.457) 13.79 (.543) 13.99 (.551) 3.50 (.138) 3.81 (.150) 4.50 (.177) Max. TJ =+25C 10 TO-247 Package Outline (BVFR) 6.15 (.242) BSC Crss 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE 0 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) Coss .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE [Cont.] 16 Ciss 100 1 5 10 50 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA IDR, REVERSE DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 50 APT6035BVFR_SVFR 15,000 10S 0.46 (.018) 0.56 (.022) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.22 (.048) 1.32 (.052) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) 1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} Source Drain Gate Dimensions in Millimeters (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 2.40 (.094) 2.70 (.106) (Base of Lead) Heat Sink (Drain) and Leads are Plated