1N1183, 1N3765, 1N1183A, 1N2128A Series www.vishay.com Vishay Semiconductors Power Silicon Rectifier Diodes, 35 A, 40 A, 60 A DESCRIPTION/FEATURES * Low leakage current series * Good surge current capability up to 1000 A * Can be supplied to meet stringent military, aerospace, and other high reliability requirements * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 DO-203AB (DO-5) PRODUCT SUMMARY IF(AV) 35 A, 40 A, 60 A MAJOR RATINGS AND CHARACTERISTICS PARAMETER IF(AV) IFSM I2t I2t VRRM TEST CONDITIONS TC 50 Hz 60 Hz 50 Hz 60 Hz Range 1N1183 35 (1) 140 (1) 480 500 (1) 1140 1040 16 100 50 to 600 (1) 1N3765 35 (1) 140 (1) 380 400 (1) 730 670 10 300 700 to 1000 (1) 1N1183A 40 (1) 150 (1) 765 800 (1) 2900 2650 41 000 50 to 600 (1) 1N2128A 60 (1) 140 (1) 860 900 (1) 3700 3400 52 500 50 to 600 (1) UNITS A C A A2s A2s V Note (1) JEDEC registered values ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER 1N1183 1N1184 1N1185 1N1186 1N1187 1N1188 1N1189 1N1190 1N3765 1N3766 1N3767 1N3768 1N1183A 1N1184A 1N1185A 1N1186A 1N1187A 1N1188A 1N1189A 1N1190A 1N2128A 1N2129A 1N2130A 1N2131A 1N2133A 1N2135A 1N2137A 1N2138A VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE (TJ = - 65 C TO 200 C (2)) V VRM, MAXIMUM DIRECT REVERSE VOLTAGE (TJ = - 65 C TO 200 C (2)) V 50 (1) 100 (1) 150 (1) 200 (1) 300 (1) 400 (1) 500 (1) 600 (1) 700 (1) 800 (1) 900 (1) 1000 (1) 50 (1) 100 (1) 150 (1) 200 (1) 300 (1) 400 (1) 500 (1) 600 (1) 700 (1) 800 (1) 900 (1) 1000 (1) Notes (1) JEDEC registered values (2) For 1N1183 Series and 1N3765 Series T = - 65 C to 190 C C * Basic type number indicates cathode to case. For anode to case, add "R" to part number, e.g., 1N1188R, 1N3766R, 1N1186RA, 1N2135RA Revision: 04-Dec-12 Document Number: 93492 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N1183, 1N3765, 1N1183A, 1N2128A Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current at case temperature IF(AV) TEST CONDITIONS 1-phase operation, 180 sinusoidal conduction Half cycle 50 Hz sine wave or 6 ms rectangular pulse Maximum peak one cycle non-repetitive surge current IFSM Half cycle 60 Hz sine wave or 5 ms rectangular pulse Half cycle 50 Hz sine wave or 6 ms rectangular pulse Half cycle 60 Hz sine wave or 5 ms rectangular pulse t = 10 ms Maximum I2t for fusing t = 8.3 ms I2t t = 10 ms Maximum I2t for individual device fusing Maximum I2t for individual device fusing Maximum peak forward voltage at maximum forward current (IFM) t = 8.3 ms I2t (2) VFM Following any rated load condition and with rated VRRM applied 140 (1) 35 (1) 140 (1) 40 (1) 150 (1) 60 (1) 140 (1) 380 765 860 500 (1) 400 (1) 800 (1) 900 (1) A C With rated VRRM applied following surge, initial TJ = TJ maximum With VRRM = 0 following surge, initial TJ = TJ maximum t = 0.1 to 10 ms, VRRM = 0 following surge TJ = 25 C 570 455 910 1000 595 475 950 1050 1140 730 2900 3700 1040 670 2650 3400 1610 1030 4150 5250 1470 940 3750 4750 16 100 10 300 41 500 52 500 A2s 1.7 (1) 1.8 (1) 1.3 (1) 1.3 (1) V 110 110 A A2s 126 188 5.0 (1) - - 4.0 (1) - - - 3.0 (1) - - - 2.0 (1) - - 10 (1) - 2.5 (1) 10 (1) IR(AV) 1N3765 1N1183A 1N2128A UNITS 480 - VRRM = 800 VRRM = 900 35 (1) A Following any rated load condition and with 1/2 VRRM applied following surge = 0 VRRM = 700 Maximum average reverse current 1N1183 Maximum rated IF(AV) and TC VRRM = 1000 Maximum rated IF(AV), VRRM and TC mA Notes (1) JEDEC registered values (2) I2t for time t = I2t x t x x Revision: 04-Dec-12 Document Number: 93492 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N1183, 1N3765, 1N1183A, 1N2128A Series www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating case temperature range SYMBOL TEST CONDITIONS 1N1183 1N3765 1N1183A 1N2128A UNITS TC - 65 to 190 (1) - 65 to 200 Maximum storage temperature range TStg - 65 to 175 (1) - 65 to 200 Maximum internal thermal resistance, junction to case RthJC DC operation Thermal resistance, case to sink RthCS Mounting surface, smooth, flat and greased C 1.00 (1) Lubricated thread, tighting on nut (2) 0.25 3.4 (30) 2.3 (20) Not lubricated thread, tighting on hexagon (3) 4.2 (37) Lubricated thread, tighting on hexagon (3) 3.2 (28) Approximate weight Case style 0.65 (1) C/W Not lubricated thread, tighting on nut (2) Maximum allowable mounting torque (+ 0 %, - 10 %) 1.1 (1) JEDEC N*m (lbf * in) 17 g 0.6 oz. DO-203AB (DO-5) Notes (1) JEDEC registered values (2) Recommended for pass-through holes (3) Recommended for holed threaded heatsinks Fig. 1 - Maximum Allowable Case Temperature vs. Average Forward Current, 1N1183 and 1N3765 Series Revision: 04-Dec-12 Fig. 2 - Typical Low Level Forward Power Loss vs. Average Forward Current (Sinusoidal Current Waveform), 1N1183 and 1N3765 Series Document Number: 93492 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N1183, 1N3765, 1N1183A, 1N2128A Series www.vishay.com Fig. 3 - Typical High Level Forward Power Loss vs. Average Forward Current (Sinusoidal Current Waveform), 1N1183 and 1N3765 Series Fig. 4 - Typical Forward Voltage vs. Forward Current, 1N1183 and 1N3765 Series Fig. 5 - Maximum Non-Repetitive Surge Current vs. Number of Current Pulses, 1N1183 and 1N3765 Series Revision: 04-Dec-12 Vishay Semiconductors Fig. 6 - Average Forward Current vs. Maximum Allowable Case Temperature, 1N1183A Series Fig. 7 - Maximum Low Level Forward Power Loss vs. Average Forward Current, 1N1183A Series Fig. 8 - Maximum High Level Forward Power Loss vs. Average Forward Current, 1N1183A Series Document Number: 93492 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N1183, 1N3765, 1N1183A, 1N2128A Series www.vishay.com Vishay Semiconductors Fig. 9 - Maximum Forward Voltage vs. Forward Current, 1N1183A Series Fig. 12 - Maximum Allowable Case Temperature vs. Average Forward Current, 1N2128A Series Fig. 10 - Maximum Non-Repetitive Surge Current vs. Number of Current Pulses, 1N1183A Series Fig. 13 - Maximum Low Level Forward Power Loss vs. Average Forward Current, 1N2128A Series Fig. 11 - Maximum Non-Repetitive Surge Current vs. Number of Current Pulses, 1N2128A Series Fig. 14 - Maximum High Level Forward Power Loss vs. Average Forward Current, 1N2128A Series Revision: 04-Dec-12 Document Number: 93492 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1N1183, 1N3765, 1N1183A, 1N2128A Series www.vishay.com Vishay Semiconductors Fig. 15 - Maximum Forward Voltage vs. Forward Current, 1N2128A Series LINKS TO RELATED DOCUMENTS Dimensions Revision: 04-Dec-12 www.vishay.com/doc?95360 Document Number: 93492 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors DO-203AB (DO-5) for 1N1183, 1N3765, 1N1183A, 1N2128A, 1N3208 Series DIMENSIONS in millimeters (inches) O 14.6 (0.57) 6.1 (0.24) 7.0 (0.28) O 4.10 (0.16) O 3.80 (0.15) 1.03 (0.04) MAX. 4 (0.16) MIN. 25.4 (1.0) MAX. 10.8 (0.43) 11.4 (0.45) 10.7 (0.42) 11.5 (0.45) 1/4" 28UNF-2A for metric devices: M6 x 1 1.0 (0.04) MAX. Document Number: 95360 Revision: 29-Sep-08 17.40 (0.68) MIN. Across flats For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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