®
Data Device Cor poration
105 Wilbur Place
Bohemia, New York 11716
631-567-5600 Fax: 631-567-7358
www.ddc-web.com
FOR MORE INFORMATION CONTACT:
Technical Suppor t:
1-800-DDC-5757 ext. 7382
FEATURES
True I2T Protection
Isolated Control Circuitry
Status Outputs
Instant Trip Protection
Leakage Clamp
Low Power Dissipation
Solid-State Reliability
DESCRIPTION
The SSP-21116 Series of 270 Volt, dc, Solid-State Power Controllers
(SSPC’s) replace electromagnetic circuit breakers and solid-state
rela ys rated at 10 and 15 amperes.These SSPC’ s off er status outputs
and permit exter nal input logic control so that they may be remotely
located near to the load.There are two models in the series, differ ing
only in rated current, so that fault and I2T trip characteristics can be
selected to protect wiring and loads.
Using Power MOSFET switches, these Power Controllers offer low
"on" resistance, low voltage drop, high "off" impedance, and low
power dissipation. Built with Power MOSFET’s and custom mono-
lithics and using thick film hybrid technology, they off er small siz e , lo w
power and high reliability.
Built-In-Test (BIT) has been provided to monitor, in real time, the sta-
tus of the internal circuitr y as well as circuitry external to the SSPC.
This BIT monitors MOSFET failure and control circuit failure.
The SSP-21116 Series will operate over the full militar y temperature
range from -55°C to +125°C with no thermal derating (see ordering
information).
APPLICATIONS
Designed to replace circuit breakers in land, air and space vehicles,
these Solid-State Power Controllers provide status outputs for light
and heavy overloads as well as minimum load current.
SSP-21116
270 VDC SOLID-STATE POWER
CONTROLLERS
Make sure the next
Card you purchase
has...
© 1990, 1999 Data Device Corporation
All trademarks are the proper ty of their respective owners.
2
Data Device Cor poration
www.ddc-web.com SSP-21116
J-03/03-0
FIGURE 1. SSP-21116 BLOCK DIAGRAM
VCC1 VCC2
MOSFET
DRIVER,
SHORT
CIRCUIT
CONTROL,
VEE1
VBIAS SUPPLY
INPUT
STATUS
CIRCUIT,
AND
ISOLATED
CONTROL
CIRCUIT
STATUS1
STATUS2
VBIAS SUPPLY
COMMON
LATCHES
INTERNAL
POWER
SUPPLIES
R
SENSE
POWER IN
POWER OUT
SLEW
CONTROL
HIGH SIDE
SWITCH CONFIG. LOW SIDE
SWITCH CONFIG.
+270 Vdc +270 Vdc
LOAD
LOAD
OR
SYSTEM
GND
POWER IN
POWER OUT
SLEW
CONTROL
CONTROL
CMD
3
Data Device Cor poration
www.ddc-web.com SSP-21116
J-03/03-0
+150°CJunction Temperature
-1000 to +1000VdcPin-to-case -0.5 to +7.0VdcV Bias voltage (see note 4)
Vdc
Vdc
Vdc
VALUE
UNIT
PARAMETER
TABLE 1. ABSOLUTE MAXIMUM RATINGS
PARAMETER UNIT VALUE
Vdc
Vdc
Vdc
+60.0 to +300.0
0 to V Bias
-300 to +300
V Bias voltage (see note 4) Vdc +4.5 to +5.5
TABLE 2. RECOMMENDED OPERATING CONDITIONS
Power Input To Power Ground
Control Input To Signal Ground
Power Ground To Signal Ground
450 continuous
500 Volts, 50ms transient
-0.5 to +7.0
-1000 to +1000
Power Input To Power Ground
Control Input To Signal Ground
Power Ground To Signal Ground
TABLE 3. SSP-21116 SPECIFICATIONS
(SEE NOTES 1 AND 2)
PARAMETER CONDITIONS UNIT VALUE
CONTROL CIRCUIT
Logic Type TTL/CMOS
compatible
V Bias Supply Current VCC = 4.5 to 5.5Vdc mA 25 typ
Control Turn-On V oltage V2.0 to 5.5
Control Turn-Off V oltage V-0.5 to 0.8
Control Input Current control voltage = 5.0V µA50 max
Control Input Current control voltage = 2.4V µA50 max
Control Input Current control voltage = 0.8V µA-50 min
Status Output Voltage VCC= 4.5V, IOL= 2.5mA V0.4 max
Status Output Voltage VCC= 4.5V, IOH= -1.0mA V2.4 min
Status Truth Table see TABLE 5
POWER CIRCUIT
Power Out Voltage with
Switch OFF Power In = 60 - 300V
No Load V30 max
Max. Continuous Current See Table 4
“On” Resistance See Table 4
Power Dissipation See Table 4
Power Out Leakage
Current to Power Ground Power In = 60 - 300V
(see note 2 ) mA/A 0.1 max
Max Load Capacitance
for Start-Up Power In = 60 - 300V
(see note 2 ) µF/A 4 typ
Signal to Neutral Ground
Isolation at 100Vdc pF 1000 typ
Output Capacitance see note 2 pF/A 300 typ
Trip Reset Time ms 30 min
Rupture Capacity Unlimited AUnlimited
TABLE 3. SSP-21116 SPECIFICATIONS (CONT.)
(SEE NOTES 1 AND 2)
PARAMETER
POWER CIRCUIT
(CONTINUED)
CONDITIONS UNIT VALUE
Output-to Input Parasitic
Diode, Forward Voltage
at Continuous Current
Power Out Voltage >
Power In Voltage V1.8 max
Isolation Resistance,
Any Pin to Case Pin-to-Case Voltage =
100Vdc M50 min
Isolation Resistance
Power Ground to
Signal Ground
Power Ground to Signal
Ground Voltage =
500Vdc M50 min
Voltage Drop across pins 6&7, 9&10 Vdc see note 3
Trip Characteristics see FIGURE 2
Response Time see FIGURE 3
TEMPERATURE RANGE
Operating (Baseplate)
Storage °C
°C -55 to +85
-55 to +125
THERMAL RESISTANCE
Case to Sink (θCS)
Case to Ambient (θCA)°C/W
°C/W 0.4
6
Temperature Rise,
Junction-to-Case Rated Load °C 10
PHYSICAL
CHARACTERISTICS
Size
Weight see FIGURE 4 g115
Note: Power Ground = Neutral; Bias Supply Common = Signal Ground
TABLES 1-3 notes:
1. -55°C Case Temperature 125°C.
2. “A” is Amps of Rated SSPC Current.
3. For 2A, 5A, and 10A units the value is 1V max; for 115A unit the value is 1.5V
max.
4. An external 0.1µf ceramic capacitor from V Bias to the +5V return ground is
recommended.
TABLE 4. POWER DISSIPATION
PART NUMBER I-MAX*(AMPS) “ON” RESISTANCE
(OHMS)**
POWER
DISSIPATION
(WATTS)**
SSP-21116-015-X
SSP-21116-010-X 15
10 0.085
0.085 19.3
8.7
* I-MAX is the maximum continuous current.
** Specified for -55°C to +105°C; increases 0.6%/°C between +105°C and
+125°C.
Note: Other Amp ratings are available, consult factory.
+300°CLead Temperature (soldering)
Power In to Power Ground V0 to 300
Output-to Input Parasitic
Diode, Continuous
Current Per Amp Of
Rated Current
Power Out Voltage >
Power In Voltage A1.0 typ
Output-to Input Parasitic
Diode, Pulsed Current
Per Amp Of Rated
Current
Power Out Voltage >
Power In Voltage Pulse
Width 100µSA4.0 typ
4
Data Device Cor poration
www.ddc-web.com SSP-21116
J-03/03-0
FUNCTIONAL DESCRIPTION
The SSP-21116 series of Solid-State P ower Controllers incorpo-
rate the wire protection feature of electromechanical circuit
breakers and the reliability of solid-state relays.In addition to the
solid-state rela y's input logic compatibility, the SSP-21116 series
provides logic compatible status outputs.
A TTL/CMOS compatible input provides external control of the
power switch's “ON/OFF” state. A logic high on this control input
turns the power to the load “on”. A logic low will turn the power
switch off, which removes power from the load.
In the event of an overload, the SSP-21116 series will trip, just
like a circuit breaker, and automatically remove power from the
load. In order to tur n back on, the control input must be brought
to a logic low, and then returned to a logic high state.
As in a circuit breaker, the SSPC's time to trip depends on the
current level.Slight overloads will cause longer trip times. Heavy
overloads will cause shorter trip times. The fault ("Instant Trip")
and I2T trip cur ve, FIGURE 2, shows the trip time as a function
of current for a single trip or repetitive trips with at least 10 sec-
onds between trip and turn on. Attempts to repeatedly turn on
into an overload will result in the thermal memory shortening
each trip time. This "memor y" protects the wire, load and Solid-
State Power Controller.
The status lines are TTL/CMOS compatible outputs which reflect
the state of the SSPC, the load and the Built-In-Test (BIT) cir-
cuits. The status permits an external subsystem to monitor and
ultimately control the SSPC. TABLE 5 defines the status lines'
states which indicate the various states of the SSPC. Further
explanation of the status lines appears in the applications infor-
mation section.
The SSP-21116 series SSPC's are characterized by their current
rating and maximum "on" resistance listed in TABLE 4. These
parameters are established by the number of Power FET's
placed in parallel within the SSPC.
The trip function is implemented by two separate circuits, a tr ue
I2T trip comparator and a short circuit fault comparator.They are
independent of each other but work together to protect the sys-
tem.
If the load current is less than 110% of rated current, the SSPC
will ne ver trip. If the load current is greater than 145%, the SSPC
will always tr ip.
F or load currents less than 800%, the trip time can be found from
FIGURE 2 by drawing a horizontal line on FIGURE 2 at the cur-
rent le v el of interest.The SSPC will alwa ys trip at a time between
the two curves.This is tr ue I2T tripping.
When the SSPC trips in accordance with the I2T characteristics,
the fall time is 200 µs, maximum.
For load currents greater than 1200%, the SSPC will turn off in
less than 25 µs. Between 800% and 1200%, the SSPC will turn
off in a time less than the "max. trip limit" shown in FIGURE 2
and may turn off in less than 25 µs. When the SSPC turns off
under these fault conditions, the fall time is less than 25 µs.
10,000
1,200
1,000
800
600
400
200
010
1.0
0.10.010.001
µs
25
145%
.
TIME - SECONDS
LOAD CURRENT % I - MAX
NEVER TRIP
MIN. TRIP LIMIT
INSTANT
TRIP
ALWAYS TRIP
MAX. TRIP LIMIT
15 AMP I T
10 AMP AND BELOW I T
2
2
110%
FIGURE 2.TRIP CHARACTERISTICS
5
Data Device Cor poration
www.ddc-web.com SSP-21116
J-03/03-0
While the SSPC will always tur n off in less than 25 µs when the
load current is greater than 1200%, the actual current may
“spike” to a value higher than 1200% due to circuit delays. The
MOSFET's inherently self limit the maximum current, depending
on the number of MOSFET's and their rating.
During turn on and turn off the rise and fall time of the output v olt-
age is controlled to be less than 200 µs.This value is a compro-
mise between faster response time with a greater amount of RFI
and EMI generated, and slower response time with less RFI and
EMI but g reater po wer dissipated in the SSPC during transitions .
Since the Power MOSFET switches are not saturated during
transitions the switching power dissipation is much greater than
the static dissipation, and longer transitions result in a larger
temperature rise. If the SSPC is rapidly turned on and off, the
high average dissipation could result in a significant temperature
rise in the SSPC. For this reason do not tur n the SSPC off and
on more rapidly than 30 msec. This will limit the maximum tem-
perature of the switches to a safe level.
The SSP-21116 has been designed to derive its internal power
requirements from the bias supply input (+5 Vdc).
APPLICATIONS INFORMATION
SELECTION
The selection of a proper sized SSPC is essential for protection
of the wire and load. This selection should be based on the
steady state and transient overload currents.
The shape of the trip cur ve (I2T) is selected as optimum to pro-
tect the system wiring. The power dissipated in the wire is the
wire resistance times the load current squared, and the temper-
ature of the wire is determined by the length of time that this
power is being dissipated.This makes the wire temperature pro-
por tional to the current squared times the on time. Since the trip
curve follows this same characteristic the SSPC can accurately
predict the wire temperature rise as a result of overloads and
remove load current before the wiring is damaged from ov ertem-
perature. Of course, the wire I2T product should be greater than
the SSPC I2T product for the SSPC to protect the wire.
PRECAUTIONS
When a short circuit causes turn off of the SSPC, precautions
have to be taken to limit the transient voltages generated by the
wire inductance. The magnitude of this voltage is L*di/dt where
CONTROL INPUT
LOAD CURRENT
TRIP POINT
STATUS 2
STATUS 1
T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13
SOLID-STATE POWER CONTROLLER TIMING AT 28 Vdc.
TIME DESCRIPTION MAXIMUM UNIT NOTES
T1-T2 TURN-ON DELAY 350 µs
T2-T3 CURRENT RISE TIME 200 µs
T1-T4 STATUS 1 & STATUS 2 TURN-ON DELAY 7.5 ms
T4-T5 STATUS 1 & STATUS 2 RISE AND FALL TIME 350 ns
T6-T7 TURN-OFF DELAY 350 µs
T7-T8 CURRENT FALL TIME 200 µs
T6-T9 STATUS 1 & STATUS 2 TURN-OFF DELAY 5.0 ms
T10-T11 TRIP TIME AFTER TURN-ON SEE FIG. 2 s
T11-T12 CURRENT FALL TIME AFTER TRIP 200 µsLOAD CURRENT < 800%
T11-T12 CURRENT FALL TIME AFTER TRIP 25 µsLOAD CURRENT > 1200%
T11-T13 TRIP TURN-OFF STATUS 1 DELAY 5.0 ms
FIGURE 3. SOLID-STATE POWER CONTROLLER TIMING
6
Data Device Cor poration
www.ddc-web.com SSP-21116
J-03/03-0
POWER ON RESET
When the 5 V bias power is first applied, the SSPC will be off
regardless of the CONTROL CMD input. If the CONTROL CMD
input is a logic low, the SSPC is turned on by bringing the CON-
TROL CMD to a logic high. If the CONTROL CMD input is at a
logic high when power is applied, the SSPC may be turned on by
cycling the CONTROL CMD input to a logic low and then to a
logic high. The system controller can be programmed to do this
cycling of the CONTROL CMD input.Subsequent loss of the bias
supply power causes the SSPC to turn off. Re-application of the
bias supply power again causes a power on reset (refer to
optional Power on reset.) Loss of power to the POWER IN ter-
minals does not turn off the SSPC and reapplication of this
power does not cause a power on reset.
STATUS CODES
This section contains a fuller explanation of the conditions and
meaning of the status codes shown in TABLE 5. Each paragraph
number corresponds to the STATE in TABLE 5.
The first four conditions show the control input has commanded
the SSPC to be off.
1) The SSPC has failed or shorted to ground. STATUS 1
indicates the load is drawing current but the SSPC should
be off.
2) The SSPC has failed. STATUS 1 indicates the load is
drawing current; STATUS 2 indicates the Power MOSFET
switch is on; the SSPC should be off.
3) Normal off condition. STATUS 1 indicates the load is not
drawing current; STATUS 2 indicates the Power MOSFET
switch is off.
"L" is the wire inductance in Henries and "di/dt" is the rate of
change of output current. If the SSPC tur ns off in 10 msec from
a 150 amp over load (1000% for 15 amp unit) with a wire induc-
tance of only 33 mH it would generate a spike of 500 volts.This
exceeds the voltage rating of the MOSFET's. In order to provide
protection from these transients, transient voltage
suppressors should be used between the SSPC Slew Control
and the Power In and between the SSPC Slew Control and
Power Out terminals. The rating of the transient voltage sup-
pressors should be selected so that at the maximum expected
short circuit current, the transient voltage suppressor voltage
drop would not exceed the SSPC voltage rating, and the power
to be dissipated can be safely absorbed without transient sup-
pressor failure.
While circuit inductance can cause high voltage transients dur-
ing turn off, lack of circuit inductance can cause current tran-
sients prior to tur n off. If the output of the SSPC is shor ted and
there is no circuit inductance, the current from the source can
rise instantaneously to a high value.The SSPC will limit the cur-
rent to about 30 times its rating (3,000%). Circuit inductance will
limit the rate of rise of this current. The SSPC can take 25 µs to
turn off. The current will always overshoot the 1200% maximum
level of the SSPC due to this 25 µs delay. If the current rises
slowly due to circuit inductance, the overshoot will be negligible;
if the current rises quickly, the overshoot will be more significant.
In any case, the current spike will be less than 25 µs.
In most real applications, there will always be significant circuit
inductance. The problem to guard against is voltage transients,
not current transients.
When testing individual SSPC's, be careful to simulate actual
system conditions.
TABLE 5. STATUS CODES
STATE OUTPUT STATUS 1
(SEE NOTE 2) OUTPUT STATUS 2
(SEE NOTE 3) POWER CONTROLLER AND LOAD STATUS
1 L L L
2 L L H
3 L H L Load “off”; showing normal “off condition.
4 L H H SSPC failure or STATUS 2 shor ted to bias supply.
5 H L L SSPC failure or short to ground on STATUS 2 line.
6 H L H Load is “ON”, showing normal “on” condition.
7 H H L Load is “OFF”, showing “trip” (see note 1).
8 H H H Normal power out with load <5% of rated SSPC current.
Notes:
1) Any trip condition per Figure 2.
2) STATUS 1 indicates a logic LOW when the load is > 15% of the rated SSPC current.
3) STATUS 2 indicates a logic HIGH when the Power MOSFET switch is on.
INPUT
CONTROL CMD
SSPC failure or short to ground.
Load “on”; showing SSPC failure.
7
Data Device Cor poration
www.ddc-web.com SSP-21116
J-03/03-0
4) The SSPC has failed or STATUS 2 has shorted to the bias
supply. STATUS 1 indicates the load is not drawing cur-
rent; STATUS 2 indicates the Power MOSFET is on; the
SSPC should be off.
The next four conditions show the control input has commanded
the SSPC to be on.
5) The SSPC has failed or there is a short to ground on the
STATUS 2 output. STATUS 1 indicates the load is drawing
current but STATUS 2 indicates the Power MOSFET
switch is off.
6) Normal on condition. STATUS 1 indicates the load is
drawing current and STATUS 2 indicates the Power MOS-
FET switch is on.
7) Tripped condition. STATUS 1 indicates the load is not
drawing current and STATUS 2 indicates the Power MOS-
FET switch is off.The SSPC can be turned back on by
cycling the input control to a logic low and then back to a
logic high. If the excessive load has not been removed,
the SSPC will trip again.
8) No load current. STATUS 1 indicates the load is not draw-
ing current; STATUS 2 indicates the Power MOSFET
switch is on.
LOADS
The SSP-21116 series can be used with any type of load: any
combination of inductive, resistive, and capacitive. In addition,
they can be used with dc motors and lamps.
Inductive loads require protecting the SSPC against v oltage tran-
sients. See the section on Precautions above.
Capacitive loads require comparing the load inrush current to the
trip curve of FIGURE 2. The inrush current must be below the
minimum trip cur ve to avoid tripping on the inrush current.
Capacitive loads can present a discharge problem. The SSPC's
use Power MOSFET's as the switching element.The MOSFET's
contain a parasitic diode which will be forward biased if the
SSPC power output terminal is more positive than the power
input terminal. If the 270 Vdc source is turned off while a charge
is held on the capacitive load, this diode will turn on and dis-
charge the load through the generator. The SSPC can carry a
reverse current equal to its forward current rating; however, the
dissipation with reverse current is up to four times the forward
current dissipation for the same current. The user must ensure
that the maximum case temperature is not exceeded.
Incandescent lamps must be treated like capacitive loads for
inrush current. Since they do not store charge, they do not pre-
sent a discharge problem.
DC motors also must be treated like capacitive loads for inrush
current.If they contin ue rotating when pow er is remov ed, reverse
current is a possibility due to back EMF.Voltage transients must
also be considered when using dc motors as loads on SSPC's.
HEATSINKING
The SSP-21116 series are designed so that the junction tem-
perature can never exceed its maximum rating if the case tem-
perature is held to 125°C or less. Heatsinking is recommended
to keep the case temperature to 125°C when operating at high
ambient temperatures. The SSPC's may be operated at room
temperature without a heat sink.The maximum ambient temper-
ature, TA, for operation without a heat sink is 125 - Pdx θCA
(where Pd is the power dissipation from TABLE 4 and θCA is the
thermal resistance from case-to-ambient from TABLE 3).
The same expression is used for finding the maximum ambient
temperature with a heat sink except θCA is now the sum of the
thermal resistance from case-to-sink and from sink-to-ambient.
NO OFFSET VOLTAGE
The Power MOSFET used in the DDC SSPC's have no inherent
voltage offset. The voltage drop across the Power MOSFET is
CONTROL
LOW SSPC failure, or STATUS 1 and STATUS 2 shorted to ground, or No Bias
SYSTEM STATUS
SSPC failure or STATUS 1 shor ted to ground
SSPC failure or STATUS 2 shorted to ground
Load “OFF”, Normal Condition
LOW
LOW
LOW
STATUS 1
LOW
LOW LOW
STATUS 2
SSPC failure or STATUS 2 shorted to ground
Load “ON”, Normal Condition
Load is “OFF”, Tr ipped
LOW
LOW
STATUS 1 indicates a logic LOW if > 15% of the rated current flowing.
STATUS 2 indicates a logic LOW if the SSPC is tripped due to overcurrent.
LOW LOW
LOWHIGH HIGH
HIGH
HIGH
HIGH
HIGH
HIGH
HIGH
HIGH
HIGH
HIGH
HIGH Load is “‘ON”, Load < 0.5% Rated Current
TABLE 6. OPTIONAL STATUS TRUTH TABLE
8
Data Device Cor poration
www.ddc-web.com SSP-21116
J-03/03-0
FIGURE 4. MECHANICAL OUTLINE FOR 10 - 15 AMP DIP PACKAGING
0.105
(2.67)
1.54
(39.12)
2.000 (MAX)
(50.8)
3.000 (MAX)
(76.20)
0.23
(5.84)
89
161
2.54
(64.52)
BOTTOM VIEW
SIDE VIEW
DIMENSIONS ARE IN INCHES (mm)
0.325 MAX
(8.26)
0.065 TYP
(1.65)
0.240 ±0.010 TYP
(6.10 ±0.25)
0.030
(0.76)
0.26
(6.60)
0.125 DIA
(4 HOLES)
(3.18)
1.48
(37.59)
0.45
(11.43)
PIN 1 DENOTED
BY CONTRASTING
COLORED BEAD
7 EQ. SP @
0.300 = 2.100
(7.62 = 5.33)
0.300 TYP
(7.62)
0.040 ±0.002
16 REQD
(1.02 ±0.05)
Note: See TABLE 7 for pinouts.
solely dependent on the current flowing through the device and
its "ON" resistance.
Bipolar transistors, on the other hand, have an inherent dc offset
voltage to which is added a voltage drop proportional to the
devices' "ON" resistance and the current flowing through it. It is
this inherent offset voltage that is missing from the power MOS-
FET.The Power MOSFET in many applications, leads to a lower
voltage drop and power dissipation as an SSPC switch. In addi-
tion the Power MOSFET's driver logic requirements are much
simpler, especially when multiple MOSFET's are used, as in the
SSPC product.
NO SECONDARY BREAKDOWN, AND PARALLELING
SSPC'S
A bipolar transistor has a set of current v oltage limits that f orm an
envelope that cannot be exceeded; this is known as the safe
operating area of the device. If this envelope is exceeded local
hot spots will occur .These hot spots conduct currents more read-
ily then adjacent cool areas and tend to become hotter .This ther-
mal runaway, or
secondary breakdown
, leads to the ultimate
destruction of the device.
The Power MOSFET's have the opposite characteristics from
that of thermal runaway in bipolar devices. A local hot spot will
steer current away from itself as its resistance in this area goes
up. This results in even current sharing throughout the entire
device, thereby eliminating hot spots.The inherent advantage of
not having secondary breakdown is that the entire MOSFET has
to e xceed its temperature limitations before damage results.This
characteristic makes the Power MOSFET more rugged when
used for power switching then bipolar devices.
TABLE 7. PINOUTS FOR FIGURE 4.
PIN FUNCTION PIN FUNCTION
1
2
3
4
5
6
7
8
POWER OUT
POWER OUT
POWER OUT
SLEW CONTROL
NC
NC
NC
NC
16
15
14
13
12
11
10
9
POWER IN
POWER IN
POWER IN
BIAS SUPPLY COMMON
BIAS SUPPLY INPUT
STATUS 1
STATUS 2
CONTROL COMMAND
9
Data Device Cor poration
www.ddc-web.com SSP-21116
J-03/03-0
Due to the current sharing aspects of the power MOSFET, they
can be placed in parallel and share the load equally. DDC has a
standard 28 Vdc 80 AMP power module which uses this tech-
nique.
ISOLATION OF CONTROL AND STATUS
The SSPC was designed with isolation between the load power
and the five volt control logic input and the status outputs.This is
necessary to pre v ent noise caused b y transients or po wer spik es
on the power line from adversely affecting the operation of the
SSPC. Therefore the case, POWER IN and the Control Circuit
are all electrically isolated. FIGURE 1 shows this isolation as the
"ISOLATED CONTROL CIRCUIT"; also notice the separation of
the power (Slew Control) ground and signal (V bias supply com-
mon) ground.
The electrical isolation is supported by an internal power oscilla-
tor that electrically isolates separate inter nal power supplies that
will power the internal analog and digital monolithics.This isola-
tion prevents load or logic ground loops from affecting the prop-
er operation of the SSPC. The isolation also insures that a fault
of the switch (MOSFET) could never propagate back into the
SSPC logic or cause damage to the logic side.
OPTIONS
The following characteristics can be factor y modified on special
orders:
• I2T TRIP CURVE: K-factor adjustments
• OUTPUT RISE AND FALL TIMES: Tur n-Off and Tur n-On time
can be factor y modified (e.g., capacitive loads)
• CURRENT RANGE
• POWER-ON RESET: Other (V Bias) options are available
• LEAKAGE CLAMP: can be deleted
• CUSTOM PACKAGING: DIP, Flat Pack, or Smaller 2-5 Amp
package
• OPTIONAL STATUS TRUTH TABLE (See Table 6)
10
Data Device Cor poration
www.ddc-web.com SSP-21116
J-03/03-0
NOTES:
11
Data Device Cor poration
www.ddc-web.com SSP-21116
J-03/03-0
ORDERING INFORMATION
SSP-21116-XXX-X
Reliability Grade:
B = Hybrids screened to MIL-PRF-38534
but without QCI testing
BLANK = Standard DDC Procedures
Current in Amps
10 = 10 Amps
15 = 15 Amps
Temperature Range:
0 = -55°C to +125°C
12
J-03/03-0 PRINTED IN THE U.S.A.
The information in this data sheet is believed to be accurate; however, no responsibility is
assumed by Data Device Cor poration for its use, and no license or rights are
granted by implication or otherwise in connection therewith.
Specifications are subject to change without notice.
105 Wilbur Place, Bohemia, New Yor k, U.S.A. 11716-2482
For Technical Suppor t - 1-800-DDC-5757 ext. 7382
Headquarters, N.Y., U.S.A. - Tel: (631) 567-5600, Fax: (631) 567-7358
Southeast, U.S.A. - Tel: (703) 450-7900, Fax: (703) 450-6610
West Coast, U.S.A. - Tel: (714) 895-9777, Fax: (714) 895-4988
United Kingdom - Tel: +44-(0)1635-811140, Fax: +44-(0)1635-32264
Ireland - Tel: +353-21-341065, Fax: +353-21-341568
France - Tel: +33-(0)1-41-16-3424, Fax: +33-(0)1-41-16-3425
Germany - Tel: +49-(0)8141-349-087, Fax: +49-(0)8141-349-089
Japan - Tel: +81-(0)3-3814-7688, Fax: +81-(0)3-3814-7689
W orld Wide W eb - http://www.ddc-web.com
DATA DEVICE CORPORATION
REGISTERED TO ISO 9001
FILE NO. A5976
R
E
G
I
S
T
E
R
E
D
F
I
R
M
®
U
The information in this data sheet is believed to be accurate; however, no responsibility is
assumed by Data Device Cor poration for its use, and no license or rights are
granted by implication or otherwise in connection therewith.
Specifications are subject to change without notice.
Please visit our web site at www.ddc-web.com for the latest infor mation.