1N1183 ... 1N1190, 1N3766, 1N3768, PBY301 ... PB307
1N1183 ... 1N1190, 1N3766, 1N3768,
PBY301 ... PB307
Silicon-Power-Rectifiers
Silizium-Leistungs-Gleichrichter
Version 2007-05-09
Dimensions - Maße [mm]
Nominal Current
Nennstrom
35 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
50 ... 1000 V
Metal case
Metallgehäuse
DO-5
Weight approx.
Gewicht ca.
6 g
Standard polarity: Cathode to stud / Kathode am Gewinde
Index R: Anode to stud / Anode am Gewinde (e. g. 1N1183R)
Standard packaging: bulk
Standard Lieferform: lose im Karton
Maximum ratings Grenzwerte
Type
Typ
Repetive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
1N1183 = PBY301 50 60
1N1184 = PBY302 100 120
1N1186 = PBY303 200 240
1N1188 = PBY304 400 480
1N1190 = PBY305 600 720
1N3766 = PBY306 800 1000
1N3768 = PBY307 1000 1200
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TC = 100°C IFAV 35 A
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz IFRM 110 A 1)
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
TA = 25°C IFSM 450/500 A
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
TA = 25°C i2t 1000 A2s
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-65...+175°C
-65...+175°C
1 Max. case temperature TC = 100°C – Max. Gehäusetemperatur TC = 100°C
© Diotec Semiconductor AG http://www.diotec.com/ 1
Ø 4
+0.5
M6
SW17
Type
36.7
10.7 14.5
13.6
1N1183 ... 1N1190, 1N3766, 1N3768, PBY301 ... PB307
Characteristics Kennwerte
Forward Voltage – Durchlass-Spannung Tj = 25°C IF = 100 A VF< 1.5 V
Leakage Current – Sperrstrom Tj = 25°C VR = VRRM IR< 500 µA
Thermal Resistance Junction – Case
Wärmewiderstand Sperrschicht – Gehäuse
RthC < 1 K/W
Recommended mounting torque
Empfohlenes Anzugsdrehmoment
M6 26 ± 10% lb.in.
3 ± 10% Nm
2 http://www.diotec.com/© Diotec Semiconductor AG
120
100
80
60
40
20
0
[%]
I
FAV
Rated forward current versus case temperature
Zul. Richtstrom in Abh. von der Gehäusetemp.
[°C]
T
C
150100
50
0
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
10
10
10
1
10
3
2
-1
[A]
I
F
0.4 V
F
0.8 1.0 1.2 1.4 [V] 1.8
T = 25°C
j
T = 125°C
j
450a-(100a-1,5v)
Peak forward surge current versus number of cycles at 50 Hz
Durchlaß-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz
10
10
10
3
2
[A]
î
F
1 10 10 [n] 10
2 3
