HFA3134, HFA3135 (R) Data Sheet August 12, 2005 Ultra High Frequency Matched Pair Transistors Features The HFA3134 and HFA3135 are Ultra High Frequency Transistor pairs that are fabricated with Intersil Corporation's complementary bipolar UHF-1X process. The NPN transistors exhibit an fT of 8.5GHz, while the PNP transistors have an fT of 7GHz. Both types exhibit low noise, making them ideal for high frequency amplifier and mixer applications. Both arrays are matched high frequency transistor pairs. The matching simplifies DC bias problems and it minimizes imbalances in differential amplifier configurations. Their high fT enables the design of UHF amplifiers which exhibit exceptional stability. Ordering Information PART NUMBER TEMP. (BRAND) RANGE (C) FN4445.2 * NPN Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . 8.5GHz * NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . 100 * NPN Noise Figure (50) at 1.0GHz . . . . . . . . . . . . . 2.6dB * PNP Transistor (fT). . . . . . . . . . . . . . . . . . . . . . . . . . 7GHz * PNP Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . . 57 * PNP Noise Figure (50) at 900MHz . . . . . . . . . . . . 4.6dB * Small Package (EIAJ-SC74 Compliant) . . . . . . . .SOT23-6 * Pb-Free Plus Anneal Available (RoHS Compliant) Applications * VHF/UHF Amplifiers * VHF/UHF Mixers PACKAGE PKG. DWG. # HFA3134IH96 (04/ ) -40 to 85 6 Ld SOT23 Tape and Reel P6.064 HFA3134IHZ96 (4Z/ ) (Note) -40 to 85 6 Ld SOT23 P6.064 Tape and Reel (Pb-free) HFA3135IH96 (05/ ) -40 to 85 6 Ld SOT23 Tape and Reel HFA3135IHZ96 (5Z/ ) (Note) -40 to 85 6 Ld SOT23 P6.064 Tape and Reel (Pb-free) * IF Converters * Synchronous Detectors Pinouts HFA3134 (SOT23) TOP VIEW P6.064 04 4Z 05 Z5 NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. 1 Q1 5 2 3 6 Q2 4 HFA3135 (SOT23) TOP VIEW 1 Q1 5 2 3 1 6 Q2 4 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright Intersil Americas Inc. 2000, 2005. All Rights Reserved All other trademarks mentioned are the property of their respective owners. HFA3134, HFA3135 Absolute Maximum Ratings Thermal Information Collector to Emitter Voltage (RB 10k to GND) . . . . . . . . . . . . 11V Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . .12V Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 4.5V Collector Current . . . . . . . . . . . . . . . . . . . . . . . . 14mA at TJ =150C 26mA at TJ =125C Base Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.7mA ESD Rating Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .400V (Per MIL-STD-883 Method 3015.7) Thermal Resistance (Typical, Note 1) JA (C/W) SOT23-6 Package . . . . . . . . . . . . . . . . . . . . . . . . . . 350 Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . . 175C Maximum Junction Temperature (Plastic Package) . . . . . . . . 150C Maximum Storage Temperature Range . . . . . . . . . . -65C to 150C Maximum Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 300C (Soldering 10s, Lead Tips Only) Operating Conditions Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . .-40C to 85C CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. JA is measured with the component mounted on an evaluation PC board in free air. 2. If a transistor is used in a diode configuration, the collector must be connected to the base to avoid exceeding the maximum base current specification. Electrical Specifications TA = 25C PARAMETER SYMBOL TEST CONDITIONS (NOTE 3) TEST LEVEL MIN TYP MAX UNITS DC CHARACTERISTICS FOR HFA3134 (NPN) Collector to Base Breakdown Voltage V(BR)CBO IC = 10A, IE = 0 A 12 21 - V Collector to Emitter Breakdown Voltage V(BR)CEO IC = 100A, IB = 0 A 4 9 - V V(BR)CER IC = 100A, RB = 10k A 11 17 - V V(BR)EBO IE = 10A, IC = 0 B - 6 - V Collector-Cutoff-Current ICEO VCE = 6V, IB = 0 A -5 - 5 nA Collector-Cutoff-Current ICBO VCB = 8V, IE = 0 A -5 - 5 nA Emitter-Cutoff-Current (Note 5) IEBO VEB = 1V, IC = 0 B - 1 - pA C - 1 - nA Emitter to Base Breakdown Voltage (Note 4) Collector to Collector Leakage Collector to Emitter Saturation Voltage Base to Emitter Voltage (Note 5) Q1 to Q2 Base to Emitter Voltage Match (Note 5) VCE(SAT) IC = 10mA, IB = 1mA A - 95 250 mV VBE IC = 10mA, VCE = 2V A - 780 1000 mV VBE IC = 10mA, VCE = 2V A - 1.2 6 mV IC = 1mA, VCE = 2V A - 1.0 6 mV IC = 0.1mA, VCE = 2V A - 0.7 6 mV IC = 10mA C - -1.5 - mV/C IC = 10mA, VCE = 2V A 48 80 200 IC = 1mA, VCE = 2V A 48 87 200 IC = 0.1mA, VCE = 2V A 48 90 200 IC = 10mA, VCE = 5V A 48 96 200 IC = 1mA, VCE = 5V A 48 96 200 IC = 0.1mA, VCE = 5V A 48 100 200 1mA IC 10mA, 1V VCE 5V A - 2 8 % IC = 1mA, VCE = 3V A 20 30 - V Base to Emitter Voltage Drift DC Forward-Current Transfer Ratio (Note 5) Q1 to Q2 Current Transfer Ratio Match Early Voltage hFE hFE VA 2 FN4445.2 August 12, 2005 HFA3134, HFA3135 Electrical Specifications TA = 25C (Continued) (NOTE 3) TEST LEVEL MIN TYP MAX UNITS f = 1.0GHz, IC = 10mA, 1V VCE 5V, ZS = 50 B - 2.4 - dB f = 1.0GHz, IC = 1mA, 1V VCE 5V, ZS = 50 B - 2.6 - dB IC = 10mA, VCE = 5V B - 8.5 - GHz IC = 1mA, VCE = 5V B - 3 - GHz IC = 10mA, VCE = 5V B - 7.5 - GHz Base to Emitter Capacitance VBE = -0.5V B - 600 - fF Collector to Base Capacitance VCB = 3V B - 500 - fF (NOTE 3) TEST LEVEL MIN TYP MAX UNITS PARAMETER SYMBOL TEST CONDITIONS DYNAMIC CHARACTERISTICS FOR HFA3134 (NPN) Noise Figure NF Current Gain-Bandwidth Product (Note 5) fT Power Gain-Bandwidth Product fMAX Electrical Specifications TA = 25C PARAMETER SYMBOL TEST CONDITIONS DC CHARACTERISTICS FOR HFA3135 (PNP) Collector to Base Breakdown Voltage V(BR)CBO IC = -10A, IE = 0 A 12 21 - V Collector to Emitter Breakdown Voltage V(BR)CEO IC = -100A, IB = 0 A 4 14 - V V(BR)CER IC = -100A, RB = 10k A 11 23 - V V(BR)EBO IE = -10A, IC = 0 B - 5 - V Collector-Cutoff-Current ICEO VCE = -6V, IB = 0 A -5 - 5 nA Collector-Cutoff-Current ICBO VCB = -8V, IE = 0 A -5 - 5 nA Emitter-Cutoff-Current IEBO VEB = -1V, IC = 0 B - TBD - pA B - 1 - nA Emitter to Base Breakdown Voltage (Note 4) Collector to Collector Leakage Collector to Emitter Saturation Voltage Base to Emitter Voltage Q1 to Q2 Base to Emitter Voltage Match DC Forward-Current Transfer Ratio VCE(SAT) IC = -10mA, IB = -1mA A - 150 250 mV VBE IC = -10mA, VCE = -2V A - 850 1000 mV VBE IC = -10mA, VCE = -2V A - 1 6 mV IC = -1mA, VCE = -2V A - 1 6 mV IC = -0.1mA, VCE = -2V A - 2 6 mV IC = -10mA, VCE = -2V A 15 40 125 IC = -1mA, VCE = -2V A 15 47 125 IC = -0.1mA, VCE = -2V A 15 52 125 IC = -10mA, VCE = -5V A 15 47 125 IC = -1mA, VCE = -5V A 15 53 125 IC = -0.1mA, VCE = -5V A 15 57 125 -1mA IC -10mA, -1V VCE -5V A - 1 8 % IC = -1mA, VCE = -3V A 15 24 - V IC = -10mA C - -1.4 - mV/C hFE hFE Q1 to Q2 Current Gain Match Early Voltage VA Base to Emitter Voltage Drift 3 FN4445.2 August 12, 2005 HFA3134, HFA3135 Electrical Specifications TA = 25C (Continued) PARAMETER (NOTE 3) TEST LEVEL MIN TYP MAX UNITS f = 900MHz, IC = -10mA, -1V VCE -5V, ZS = 50 B - 5.2 - dB f = 900MHz, IC = -1mA, -1V VCE -5V, ZS = 50 B - 4.6 - dB SYMBOL TEST CONDITIONS DYNAMIC CHARACTERISTICS FOR HFA3135 (PNP) Noise Figure NF Current Gain-Bandwidth Product fT IC = -10mA, VCE = -5V B - 7 - GHz Power Gain-Bandwidth Product fMAX IC = -10mA, VCE = -5V B - TBD - GHz Base to Emitter Capacitance VBE = 0.5V B - 550 - fF Collector to Base Capacitance VCB = -3V B - 400 - fF NOTES: 3. Test Level: A. Production Tested; B. Typical or Guaranteed Limit Based on Characterization; C. Design Typical for Information Only. 4. Measuring VEBO can degrade the transistor hFE and hFE match. 5. See Typical Performance Curves for more information. Typical Performance Curves IB = 200A 20 Q1 COLLECTOR CURRENT (mA) 18 Q2 IB = 160A 16 Q1 14 Q2 IB = 120A 12 Q1 10 Q2 8 IB = 80A Q1 6 Q2 IB = 40A Q1 4 Q2 2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. NPN COLLECTOR CURRENT vs COLLECTOR TO EMITTER VOLTAGE 4 COLLECTOR CURRENT AND BASE CURRENT (A) TA = 25C, Unless Otherwise Specified Q1 100m Q2 10m Q1 1m Q2 100 IC 10 1 100n IB 10n 1n 100p 10p 0.4 0.5 0.7 0.9 0.6 0.8 BASE TO EMITTER VOLTAGE (V) 1.0 FIGURE 2. NPN COLLECTOR AND BASE CURRENTS vs BASE TO EMITTER VOLTAGE FN4445.2 August 12, 2005 HFA3134, HFA3135 Typical Performance Curves TA = 25C, Unless Otherwise Specified (Continued) 130 10 120 Q2 Q1 DC CURRENT GAIN 100 90 80 VCE = 3V Q2 70 VCE = 1V 60 VCE = 5V 9 VCE = 5V GAIN BANDWIDTH (GHz) 110 Q1 50 VCE = 3V 8 7 6 5 4 VCE = 1V 3 2 40 1 30 20 1n 1n 100n 1 10 100 1m 10m 0.1 100m 1 10 100 COLLECTOR CURRENT (mA) COLLECTOR CURRENT (A) FIGURE 3. NPN DC CURRENT GAIN vs COLLECTOR CURRENT FIGURE 4. NPN GAIN BANDWIDTH PRODUCT vs COLLECTOR CURRENT 1n EMITTER LEAKAGE CURRENT (A) COLLECTOR = OPEN 100p 10p 1p 0.1p 0 -0.3 -0.6 -0.9 -1.2 -1.5 -1.8 -2.1 -2.4 -2.7 -3.0 BASE TO EMITTER VOLTAGE (V) FIGURE 5. NPN EMITTER CUTOFF CURRENT vs BASE TO EMITTER VOLTAGE All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation's quality certifications can be viewed at www.intersil.com/design/quality Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 5 FN4445.2 August 12, 2005