1
®
FN4445.2
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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HFA3134, HFA3135
Ultra High Frequency Matched Pair
Transistors
The HFA3134 and HFA3135 are Ultra High Frequency
Transistor pairs that are fabricated with Intersil Corporation’s
complementary bipolar UHF-1X process. The NPN
transistors exhibit an fT of 8.5GHz, while the PNP transistors
have an fT of 7GHz. Both types exhibit low noise, making
them ideal for high frequency amplifier and mixer
applications.
Both arrays are matched high frequency transistor pairs. The
matching simplifies DC bias problems and it minimizes
imbalances in differential amplifier configurations. Their high
fT enables the design of UHF amplifiers which exhibit
exceptional stability.
Features
• NPN Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . 8.5GHz
• NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . 100
•NPN Noise Figure (50Ω) at 1.0GHz. . . . . . . . . . . . . 2.6dB
• PNP Transistor (fT). . . . . . . . . . . . . . . . . . . . . . . . . . 7GHz
• PNP Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . . 57
• PNP Noise Figure (50Ω) at 900MHz . . . . . . . . . . . . 4.6dB
• Small Package (EIAJ-SC74 Compliant). . . . . . . .SOT23-6
• Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
• VHF/UHF Amplifiers
•VHF/UHF Mixers
• IF Converters
• Synchronous Detectors
Pinouts
HFA3134
(SOT23)
TOP VIEW
HFA3135
(SOT23)
TOP VIEW
Ordering Information
PART NUMBER
(BRAND)
TEMP.
RANGE (°C) PACKAGE
PKG.
DWG. #
HFA3134IH96
(04/ )
-40 to 85 6 Ld SOT23
Tape and Reel
P6.064
HFA3134IHZ96
(4Z/ ) (Note)
-40 to 85 6 Ld SOT23
Tape and Reel (Pb-free)
P6.064
HFA3135IH96
(05/ )
-40 to 85 6 Ld SOT23
Tape and Reel
P6.064
HFA3135IHZ96
(5Z/ ) (Note)
-40 to 85 6 Ld SOT23
Tape and Reel (Pb-free)
P6.064
NOTE: Intersil Pb-free plus anneal products employ special Pb-free
material sets; molding compounds/die attach materials and 100%
matte tin plate termination finish, which are RoHS compliant and
compatible with both SnPb and Pb-free soldering operations. Intersil
Pb-free products are MSL classified at Pb-free peak reflow
temperatures that meet or exceed the Pb-free requirements of
IPC/JEDEC J STD-020.
04
4Z
05
Z5
1
2
34
6
5
Q1
Q2
1
2
34
6
5
Q1
Q2
Data Sheet August 12, 2005
2FN4445.2
August 12, 2005
Absolute Maximum Ratings Thermal Information
Collector to Emitter Voltage (RB ≤ 10kΩ to GND) . . . . . . . . . . . .11V
Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . .12V
Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 4.5V
Collector Current . . . . . . . . . . . . . . . . . . . . . . . . 14mA at TJ =150°C
26mA at TJ =125°C
Base Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.7mA
ESD Rating
Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .400V
(Per MIL-STD-883 Method 3015.7)
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . .-40°C to 85°C
Thermal Resistance (Typical, Note 1) θJA (°C/W)
SOT23-6 Package . . . . . . . . . . . . . . . . . . . . . . . . . . 350
Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . . 175°C
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150°C
Maximum Storage Temperature Range . . . . . . . . . . -65°C to 150°C
Maximum Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 300°C
(Soldering 10s, Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
2. If a transistor is used in a diode configuration, the collector must be connected to the base to avoid exceeding the maximum base current
specification.
Electrical Specifications TA = 25°C
PARAMETER SYMBOL TEST CONDITIONS
(NOTE 3)
TEST
LEVEL MIN TYP MAX UNITS
DC CHARACTERISTICS FOR HFA3134 (NPN)
Collector to Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 A 12 21 - V
Collector to Emitter Breakdown Voltage V(BR)CEO IC = 100µA, IB = 0 A 4 9 - V
V(BR)CER IC = 100µA, RB = 10kΩA1117-V
Emitter to Base Breakdown Voltage (Note 4) V(BR)EBO IE = 10µA, IC = 0 B - 6 - V
Collector-Cutoff-Current ICEO VCE = 6V, IB = 0 A -5 - 5 nA
Collector-Cutoff-Current ICBO VCB = 8V, IE = 0 A -5 - 5 nA
Emitter-Cutoff-Current (Note 5) IEBO VEB = 1V, IC = 0 B - 1 - pA
Collector to Collector Leakage C - 1 - nA
Collector to Emitter Saturation Voltage VCE(SAT) IC = 10mA, IB = 1mA A - 95 250 mV
Base to Emitter Voltage (Note 5) VBE IC = 10mA, VCE = 2V A - 780 1000 mV
Q1 to Q2 Base to Emitter Voltage Match
(Note 5)
∆VBE IC = 10mA, VCE = 2V A - 1.2 6 mV
IC = 1mA, VCE = 2V A - 1.0 6 mV
IC = 0.1mA, VCE = 2V A - 0.7 6 mV
Base to Emitter Voltage Drift IC = 10mA C - -1.5 - mV/°C
DC Forward-Current Transfer Ratio
(Note 5)
hFE IC = 10mA, VCE = 2V A 48 80 200
IC = 1mA, VCE = 2V A 48 87 200
IC = 0.1mA, VCE = 2V A 48 90 200
IC = 10mA, VCE = 5V A 48 96 200
IC = 1mA, VCE = 5V A 48 96 200
IC = 0.1mA, VCE = 5V A 48 100 200
Q1 to Q2 Current Transfer Ratio Match ∆hFE 1mA ≤ IC ≤ 10mA,
1V ≤ VCE ≤ 5V
A-28%
Early Voltage VAIC = 1mA, ∆VCE = 3V A 20 30 - V
HFA3134, HFA3135
3FN4445.2
August 12, 2005
DYNAMIC CHARACTERISTICS FOR HFA3134 (NPN)
Noise Figure NF f = 1.0GHz, IC = 10mA,
1V ≤ VCE ≤ 5V, ZS = 50Ω
B - 2.4 - dB
f = 1.0GHz, IC = 1mA,
1V ≤ VCE ≤ 5V, ZS = 50Ω
B - 2.6 - dB
Current Gain-Bandwidth Product
(Note 5)
fTIC = 10mA, VCE = 5V B - 8.5 - GHz
IC = 1mA, VCE = 5V B - 3 - GHz
Power Gain-Bandwidth Product fMAX IC = 10mA, VCE = 5V B - 7.5 - GHz
Base to Emitter Capacitance VBE = -0.5V B - 600 - fF
Collector to Base Capacitance VCB = 3V B - 500 - fF
Electrical Specifications TA = 25°C (Continued)
PARAMETER SYMBOL TEST CONDITIONS
(NOTE 3)
TEST
LEVEL MIN TYP MAX UNITS
Electrical Specifications TA = 25°C
PARAMETER SYMBOL TEST CONDITIONS
(NOTE 3)
TEST
LEVEL MIN TYP MAX UNITS
DC CHARACTERISTICS FOR HFA3135 (PNP)
Collector to Base Breakdown Voltage V(BR)CBO IC = -10µA, IE = 0 A 12 21 - V
Collector to Emitter Breakdown Voltage V(BR)CEO IC = -100µA, IB = 0 A 4 14 - V
V(BR)CER IC = -100µA, RB = 10kΩA1123-V
Emitter to Base Breakdown Voltage (Note 4) V(BR)EBO IE = -10µA, IC = 0 B - 5 - V
Collector-Cutoff-Current ICEO VCE = -6V, IB = 0 A -5 - 5 nA
Collector-Cutoff-Current ICBO VCB = -8V, IE = 0 A -5 - 5 nA
Emitter-Cutoff-Current IEBO VEB = -1V, IC = 0 B - TBD - pA
Collector to Collector Leakage B - 1 - nA
Collector to Emitter Saturation Voltage VCE(SAT) IC = -10mA, IB = -1mA A - 150 250 mV
Base to Emitter Voltage VBE IC = -10mA, VCE = -2V A - 850 1000 mV
Q1 to Q2 Base to Emitter Voltage Match ∆VBE IC = -10mA, VCE = -2V A - 1 6 mV
IC = -1mA, VCE = -2V A - 1 6 mV
IC = -0.1mA, VCE = -2V A - 2 6 mV
DC Forward-Current Transfer Ratio hFE IC = -10mA, VCE = -2V A 15 40 125
IC = -1mA, VCE = -2V A 15 47 125
IC = -0.1mA, VCE = -2V A 15 52 125
IC = -10mA, VCE = -5V A 15 47 125
IC = -1mA, VCE = -5V A 15 53 125
IC = -0.1mA, VCE = -5V A 15 57 125
Q1 to Q2 Current Gain Match ∆hFE -1mA ≤ IC ≤ -10mA,
-1V ≤ VCE ≤ -5V
A-18%
Early Voltage VAIC = -1mA, ∆VCE = -3V A 15 24 - V
Base to Emitter Voltage Drift IC = -10mA C - -1.4 - mV/°C
HFA3134, HFA3135
4FN4445.2
August 12, 2005
DYNAMIC CHARACTERISTICS FOR HFA3135 (PNP)
Noise Figure NF f = 900MHz, IC = -10mA,
-1V ≤ VCE ≤ -5V, ZS = 50Ω
B - 5.2 - dB
f = 900MHz, IC = -1mA,
-1V ≤ VCE ≤ -5V, ZS = 50Ω
B - 4.6 - dB
Current Gain-Bandwidth Product fTIC = -10mA, VCE = -5V B - 7 - GHz
Power Gain-Bandwidth Product fMAX IC = -10mA, VCE = -5V B - TBD - GHz
Base to Emitter Capacitance VBE = 0.5V B - 550 - fF
Collector to Base Capacitance VCB = -3V B - 400 - fF
NOTES:
3. Test Level: A. Production Tested; B. Typical or Guaranteed Limit Based on Characterization; C. Design Typical for Information Only.
4. Measuring VEBO can degrade the transistor hFE and hFE match.
5. See Typical Performance Curves for more information.
Electrical Specifications TA = 25°C (Continued)
PARAMETER SYMBOL TEST CONDITIONS
(NOTE 3)
TEST
LEVEL MIN TYP MAX UNITS
Typical Performance Curves TA = 25°C, Unless Otherwise Specified
FIGURE 1. NPN COLLECTOR CURRENT vs COLLECTOR TO
EMITTER VOLTAGE
FIGURE 2. NPN COLLECTOR AND BASE CURRENTS vs
BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT (mA)
COLLECTOR TO EMITTER VOLTAGE (V)
16
14
12
10
8
6
4
2
0
20
18
4.03.53.02.52.01.51.00.505.04.5
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2Q1
Q2
IB= 200µA
IB= 160µA
IB= 120µA
IB=80µA
IB=40µA
COLLECTOR CURRENT AND BASE CURRENT (A)
BASE TO EMITTER VOLTAGE (V)
1m
100µ
10µ
1µ
100n
10n
1n
100p
10p
100m
10m
1.00.80.60.4
IC
IB
Q2
Q1
Q2
Q1
0.90.70.5
HFA3134, HFA3135
5
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
FN4445.2
August 12, 2005
FIGURE 3. NPN DC CURRENT GAIN vs COLLECTOR CURRENT FIGURE 4. NPN GAIN BANDWIDTH PRODUCT vs
COLLECTOR CURRENT
FIGURE 5. NPN EMITTER CUTOFF CURRENT vs BASE TO EMITTER VOLTAGE
Typical Performance Curves TA = 25°C, Unless Otherwise Specified (Continued)
DC CURRENT GAIN
COLLECTOR CURRENT (A)
100
90
80
70
60
50
40
30
20
130
120
110
100m10m1m
100µ10µ1µ
100n1n1n
Q1
Q2
Q1
VCE =3V
VCE =1V
VCE =5V
Q2
GAIN BANDWIDTH (GHz)
0.1 1 10 100
COLLECTOR CURRENT (mA)
1
10
9
8
7
6
5
4
3
2
VCE =1V
VCE =3V
VCE =5V
EMITTER LEAKAGE CURRENT (A)
BASE TO EMITTER VOLTAGE (V)
1n
100p
10p
1p
0.1p
-2.4-2.1-1.8-1.5-1.2-0.9-0.6-0.30-3.0-2.7
COLLECTOR = OPEN
HFA3134, HFA3135
