2FN4445.2
August 12, 2005
Absolute Maximum Ratings Thermal Information
Collector to Emitter Voltage (RB ≤ 10kΩ to GND) . . . . . . . . . . . .11V
Collector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . .12V
Emitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 4.5V
Collector Current . . . . . . . . . . . . . . . . . . . . . . . . 14mA at TJ =150°C
26mA at TJ =125°C
Base Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.7mA
ESD Rating
Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .400V
(Per MIL-STD-883 Method 3015.7)
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . .-40°C to 85°C
Thermal Resistance (Typical, Note 1) θJA (°C/W)
SOT23-6 Package . . . . . . . . . . . . . . . . . . . . . . . . . . 350
Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . . 175°C
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150°C
Maximum Storage Temperature Range . . . . . . . . . . -65°C to 150°C
Maximum Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 300°C
(Soldering 10s, Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. θJA is measured with the component mounted on an evaluation PC board in free air.
2. If a transistor is used in a diode configuration, the collector must be connected to the base to avoid exceeding the maximum base current
specification.
Electrical Specifications TA = 25°C
PARAMETER SYMBOL TEST CONDITIONS
(NOTE 3)
TEST
LEVEL MIN TYP MAX UNITS
DC CHARACTERISTICS FOR HFA3134 (NPN)
Collector to Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 A 12 21 - V
Collector to Emitter Breakdown Voltage V(BR)CEO IC = 100µA, IB = 0 A 4 9 - V
V(BR)CER IC = 100µA, RB = 10kΩA1117-V
Emitter to Base Breakdown Voltage (Note 4) V(BR)EBO IE = 10µA, IC = 0 B - 6 - V
Collector-Cutoff-Current ICEO VCE = 6V, IB = 0 A -5 - 5 nA
Collector-Cutoff-Current ICBO VCB = 8V, IE = 0 A -5 - 5 nA
Emitter-Cutoff-Current (Note 5) IEBO VEB = 1V, IC = 0 B - 1 - pA
Collector to Collector Leakage C - 1 - nA
Collector to Emitter Saturation Voltage VCE(SAT) IC = 10mA, IB = 1mA A - 95 250 mV
Base to Emitter Voltage (Note 5) VBE IC = 10mA, VCE = 2V A - 780 1000 mV
Q1 to Q2 Base to Emitter Voltage Match
(Note 5)
∆VBE IC = 10mA, VCE = 2V A - 1.2 6 mV
IC = 1mA, VCE = 2V A - 1.0 6 mV
IC = 0.1mA, VCE = 2V A - 0.7 6 mV
Base to Emitter Voltage Drift IC = 10mA C - -1.5 - mV/°C
DC Forward-Current Transfer Ratio
(Note 5)
hFE IC = 10mA, VCE = 2V A 48 80 200
IC = 1mA, VCE = 2V A 48 87 200
IC = 0.1mA, VCE = 2V A 48 90 200
IC = 10mA, VCE = 5V A 48 96 200
IC = 1mA, VCE = 5V A 48 96 200
IC = 0.1mA, VCE = 5V A 48 100 200
Q1 to Q2 Current Transfer Ratio Match ∆hFE 1mA ≤ IC ≤ 10mA,
1V ≤ VCE ≤ 5V
A-28%
Early Voltage VAIC = 1mA, ∆VCE = 3V A 20 30 - V
HFA3134, HFA3135