1MBH50D-060S - Fuji Electric - Datasheet.Directory

1MBH50D-060S Molded IGBT

600V / 50A Molded Package

Features

· Small molded package

· Low power loss

· Soft switching with low switching surge and noise

· High reliability, high ruggedness (RBSOA, SCSOA etc.)

· Comprehensive line-up

Applications

· Inverter for Motor drive

· AC and DC Servo drive amplifier

· Uninterruptible power supply

Maximum ratings and characteristics

Absolute maximum ratings (Tc=25°C) Equivalent Circuit Schematic

Item Symbol

Collector-Emitter voltage VCES

Gate-Emitter voltaga VGES

Collector DC Tc=25°C IC25

current Tc=100°C IC100

1ms Tc=25°C Icp

Max. power dissipation (IGBT) PC

Max. power dissipation (FWD) PC

Operating temperature Tj

Storage temperature Tstg

Screw torque -

Rating

600

±20

75

50

150

230

150

+150

-40 to +150

58.8 to 78.4

Unit

V

A

W

°C

N·cm

C:Collector

E:Emitter

G:Gate

IGBT + FWD

Electrical characteristics (at Tc=25°C unless otherwise specified)

Item

Zero gate voltage collector current

Gate-Emitter leakage current

Gate-Emitter threshold voltage

Collector-Emitter saturation voltage

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on time

Turn-off time

Switching

Time Turn-on time

Turn-off time

FWD forward on voltage

Reverse recovery time

ICES

IGES

VGE(th)

VCE(sat)

Cies

Coes

Cres

ton *

tr *

trr2

toff

tf

ton *

tr *

trr2

toff

tf

VF

trr

– – 1.0

––10

4.0 5.0 6.0

– 2.4 2.9

– 2500 –

– 240 –

– 130 –

– 0.15 –

– 0.09 –

– 0.03 –

– 0.50 0.62

– 0.10 0.17

– 0.15 –

– 0.09 –

– 0.03 –

– 0.50 0.62

– 0.10 0.17

– 2.0 2.5

– 0.06 0.10

VGE=0V, VCE=600V

VCE=0V, VGE=±20V

VCE=20V, I C=50mA

VGE=15V, IC=50A

VGE=0V

VCE=25V

f=1MHz

VCC=300V, IC=50A

VGE=±15V

RG=33 ohm

(Half Bridge)

Inductance Load

VCC=300V, IC=50A

VGE=+15V

RG=8 ohm

(Half Bridge)

Inductance Load

IF=50A, VGE=0V

IF=50A, VGE=-10V,

VR=300V, di/dt=100A/µs

mA

µA

V

pF

µs

V

µs

Symbol Characteristics Conditions Unit

Min. Typ. Max.

*Turn-on characteristics include trr2. See a figure in next page.

Thermal resistance characteristics

Thermal resistance – – 0.54

– – 0.83 IGBT

FWD °C/W

°C/W

Item Symbol Characteristics Conditions Unit

Min. Typ. Max.

Rth(j-c)

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1MBH50D-060S Molded IGBT

Outline drawings, mm

TO-3PL

Gate

Collector

Emitter

Switching waveform (Inductance load)

Mesurement circuit

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Characteristics

1MBH50D-060S Molded IGBT

Collector current vs. Collector-Emitter voltage

Tj=25°C

Collector-Emitter Voltage : VCE (V)

Collector Current : IC (A)

Collector-Emitter Voltage : VCE (V)

Collector current vs. Collector-Emitter voltage

Tj=125°C

Collector-Emitter voltage vs. Gate-Emitter voltage

Tj=25°C Collector-Emitter voltage vs. Gate-Emitter voltage

Tj=125°C

Collector-Emitter Voltage : VCE (V)

Gate-Emitter Voltage : VGE (V) Gate-Emitter Voltage : VGE (V)

Switching time vs. Collector current

VCC=300V, RG=8Ω, VGE=+15V, Tj=125°C

Switching time vs. Collector current

VCC=300V, RG=33Ω, VGE=±15V, Tj=125°C

Switching time

: tf,toff, tr, ton, trr2 (nsec)

Switching time

: tf,toff, tr, ton, trr2 (nsec)

Collector current : IC (A) Collector current : IC (A)

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IGBT Module

Characteristics

1MBH50D-060S

Gate resistance : RG (Ω)

Switching time vs. RG

VCC=300V, IC=50A, VGE=+15V , Tj=125°C

Switching time

: tf,toff, tr, ton, trr2 (nsec)

Gate resistance : RG (Ω)

Switching time

: tf,toff, tr, ton, trr2 (nsec)

Switching time vs. RG

VCC=300V, IC=50A, VGE=±15V, Tj=125°C

Dynamic input characteristics

Tj=25°C

Collector-Emitter voltage : VCE (V)

Gate charge : Qg (nc)

Capacitance vs. Collector-Emitter voltage

Tj=25°C

Capacitance : Cies, Coes, Cres (nF)

Collector-Emitter Voltage : VCE (V)

Reverse Biased Safe Operating Area

RG=8Ω, +VGE 20V , -VGE=15V, Tj 125°C

=

<

=

<

Collector current : IC (A)

Collector-Emitter voltage : VCE (V) Collector-Emitter voltage : VCE (V)

Collector current : IC (A)

Forward Bias Safe Operating Area

Gate-Emitter voltage : VGE (V)

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IGBT Module

Characteristics

1MBH50D-060S

Reverse recovery time vs. Forward current

VR=300V, -di/dt=100A/µsec

Reverse recovery time : trr [nsec]

Forward current : IF (A) Forward current : IF (A)

Reverse recovery current : Irr [A]

Forward voltage vs. Forward current

Forward Current : IF [A]

Forward Voltage : VF (V)

Reverse recovery chracteristics vs. -di/dt

VR=300V, IF=50A, Tj=125°C

Reverse recovery time : trr [nsec]

-di/dt [A/µsec]

Reverse recovery current : Irr [A]

Transient thermal resistance

Reverse recovery current vs. Forward current

VR=300V, -di/dt=100A/µsec

Thermal resistance : Rth(j-c) [°C/W]

Pulse width : PW (sec)

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