LA E67F dual binning
1Version 1.2 | 2018-09-20
Produktdatenblatt | Version 1.1
www.osram-os.com
Applications
LA E67F dual binning
Power TOPLED®
PowerTOPLED, a powerful member of the TOPLED
family. Thanks to their high luminous e󰘲cacy, the
LEDs are ideal for rear light clusters and indicators
on vehicles.
—Signalling
Features:
—Package: white PLCC-4 package, colorless clear resin
—Chip technology: Thin󰘰lm
—Typ. Radiation: 120° (Lambertian emitter)
—Color:
λ
dom = 617 nm (● amber)
—Corrosion Robustness Class: 3B
—ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)
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2Version 1.2 | 2018-09-20
Ordering Information
Type Luminous Intensity 1) Luminous Intensity 1) Ordering Code
IF = 4 mA IF = 50 mA
IvIv
LA E67F-R2T1-1-1+BBCB-24-1 140 ... 355 mcd 2240 ... 4500 mcd Q65111A6057
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Maximum Ratings
Parameter Symbol Values
Operating Temperature Top min.
max.
-40 °C
100 °C
Storage Temperature Tstg min.
max.
-40 °C
100 °C
Junction Temperature Tjmax. 125 °C
Forward current
TS = 25 °C
IFmax. 70 mA
Surge Current
t ≤ 10 µs; D = 0.005 ; TS = 25 °C
IFS max. 100 mA
Reverse voltage 2)
TS = 25 °C
VRmax. 12 V
ESD withstand voltage
acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)
VESD 2 kV
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Characteristics
IF = 50 mA; TS = 25 °C
Parameter Symbol Values
Peak Wavelength 3) λpeak typ. 624 nm
Dominant Wavelength 3)
IF = 50 mA
λdom min.
typ.
max.
612 nm
617 nm
624 nm
Spectral Bandwidth at 50% Irel,max ∆λ typ. 18 nm
Viewing angle at 50 % IV2φ typ. 120 °
Forward Voltage 4)
IF = 50 mA
VFmin.
typ.
max.
1.90 V
2.15 V
2.50 V
Reverse current 2)
VR = 12 V
IRtyp.
max.
0.01 µA
10 µA
Temperature Coe󰘲cient of Peak Wavelength
-10°C ≤ T ≤ 100°C
TCλpeak typ. 0.14 nm / K
Real thermal resistance junction/solderpoint 5) RthJS real typ.
max.
110 K / W
130 K / W
Electrical thermal resistance junction/solderpoint 5)
with e󰘲ciency ηe = 25 %
RthJS elec. typ.
max.
83 K / W
98 K / W
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Brightness Groups
Group Luminous Intensity 1) Luminous Intensity. 1) Luminous Flux 6)
IF = 4 mA IF = 4 mA IF = 4 mA
min. max. typ.
IvIv
Φ
V
R2 140 mcd 180 mcd 480 mlm
S1 180 mcd 224 mcd 610 mlm
S2 224 mcd 280 mcd 760 mlm
T1 280 mcd 355 mcd 950 mlm
Brightness Groups
Group Luminous Intensity 1) Luminous Intensity. 1) Luminous Flux 6)
IF = 50 mA IF = 50 mA IF = 50 mA
min. max. typ.
IvIv
Φ
V
BB 2240 mcd 2800 mcd 7560 mlm
CA 2800 mcd 3550 mcd 9530 mlm
CB 3550 mcd 4500 mcd 12080 mlm
Forward Voltage Groups
Group Forward Voltage 4) Forward Voltage 4)
IF = 4 mA IF = 4 mA
min. max.
VFVF
3X 1.65 V 1.71 V
3Y 1.71 V 1.77 V
4X 1.77 V 1.83 V
4Y 1.83 V 1.89 V
5X 1.89 V 1.95 V
Forward Voltage Groups
Group Forward Voltage 4) Forward Voltage 4)
IF = 50 mA IF = 50 mA
min. max.
VFVF
3A 1.90 V 2.05 V
3B 2.05 V 2.20 V
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Forward Voltage Groups
Group Forward Voltage 4) Forward Voltage 4)
IF = 50 mA IF = 50 mA
min. max.
VFVF
4A 2.20 V 2.35 V
4B 2.35 V 2.50 V
Wavelength Groups
Group Dominant Wavelength 3) Dominant Wavelength 3)
IF = 4 mA IF = 4 mA
min. max.
λ
dom
λ
dom
1 611 nm 624 nm
Wavelength Groups
Group Dominant Wavelength 3) Dominant Wavelength 3)
IF = 50 mA IF = 50 mA
min. max.
λ
dom
λ
dom
2 612 nm 616 nm
3 616 nm 620 nm
4 620 nm 624 nm
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Relative Spectral Emission 6)
Irel = f (λ); IF = 50 mA; TS = 25 °C
LA E67F dual binning
350 400 450 500 550 600 650 700 750 800
λ
/
0,0
0,2
0,4
0,6
0,8
1,0
I
:V
λ
:amber
Radiation Characteristics 6)
Irel = f (ϕ); TS = 25 °C
LA E67F dual binning
-100°
-90°
-80°
-70°
-60°
-50°
-40°
-30°
-20°
-10° 0° 10° 20° 30° 40° 50° 60° 70° 80° 90°
ϕ
/
0,0
0,2
0,4
0,6
0,8
1,0
I
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Forward current 6), 7)
IF = f(VF); TS = 25 °C
LA E67F dual binning
1,
72,3
1,81,9 2,02,1 2,2
V
F
/
V
1
2
3
4
5
10
20
30
40
50
I
F
/
mA
Relative Luminous Intensity 6), 7)
Iv/Iv(IF group) = f(IF); TS = 25 °C
LA E67F dual binning
1
70
1
2
345
10
20
30
40
50
I
F
/
mA
0,01
0,05
0,1
0,5
1
5
10
I
V
I
V
(I
Fgroup
)
:I
F
=50mA
:I
F
=4mA
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Forward Voltage 6)
ΔVF = VF - VF(25 °C) = f(Tj); IF = 50 mA
LA E67F dual binning
-40-20 020406080100
120
T
j
/
°C
-0,3
-0,2
-0,1
0,0
0,1
0,2
0,3
∆
V
F
/
V
Relative Luminous Intensity 6)
Iv/Iv(25 °C) = f(Tj); IF = 50 mA
LA E67F dual binning
-40-20 020406080100
120
T
j
/
°C
0,0
0,2
0,4
0,6
0,8
1,0
1,2
1,4
1,6
I
v
I
v
(25°C)
Dominant Wavelength 6)
λdom = f(Tj); IF = 50 mA
LA E67F dual binning
-40-20 020406080100
120
T
/
°C
560
580
600
620
640
660
λ
/
nm
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Max. Permissible Forward Current
IF = f(T)
OHL01413
0020 40 60 80 ˚C 100
T
I
F
20
40
60
80
mA
A
T
S
T
temp. ambient
temp. solder point
A
S
Τ
Τ
10
30
70
50
Permissible Pulse Handling Capability
IF = f(tp); D: Duty cycle; TA = 25 °C
0
A
OHL02046
p
t
F
I
-5 1
10
-4
10 10
-3 -2 1010-1 0 10 10s 2
10
0.02
0.04
0.06
0.08
0.10
0.12
P
t
DT
=
T
t
P
I
F
0.2
1
0.5
D
=
0.1
0.005
0.01
=
0.02
0.05
D
Permissible Pulse Handling Capability
IF = f(tp); D: Duty cycle; TA = 85 °C
0
A
OHL02045
p
t
F
I
-5 1
10
-4
10 10
-3 -2 1010-1 0 10 10s 2
10
0.02
0.04
0.06
0.08
0.10
0.12
P
t
DT
=
T
t
P
I
F
0.005
0.01
=
0.02
0.05
D
0.1
0.2
0.5
1
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Dimensional Drawing 8)
GPLY6084
0.7 (0.028)
0.9 (0.035)
1.7 (0.067)
2.1 (0.083)
0.12 (0.005)
0.18 (0.007)
0.5 (0.020)
1.1 (0.043)
3.3 (0.130)
3.7 (0.146)
0.4 (0.016)
0.6 (0.024)
2.6 (0.102)
3.0 (0.118)
2.1 (0.083)
2.3 (0.091)
Package marking
3.0 (0.118)
3.4 (0.134)
(2.4) (0.095)
0.1 (0.004) (typ.)
4˚±1
0.6 (0.024)
0.8 (0.031)
AA
CA AC
A A
Approximate Weight: 30.0 mg
Package marking: Cathode
Corrosion test: Class: 3B
Test condition: 40°C / 90 % RH / 15 ppm H2S / 14 days (stricter then IEC
60068-2-43)
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Recommended Solder Pad 8)
OHLPY440
Padgeometrie für
verbesserte Wärmeableitung
improved heat dissipation
Paddesign for
Lötstoplack
Solder resist
0.8 (0.031)
3.7 (0.146)
1.1 (0.043)
2.3 (0.091)
3.3 (0.130)
1.5 (0.059)
11.1 (0.437)
Cu Fläche /16 mm per pad
2
Cu-area
_
<
3.3 (0.130)
Kathode/
Cathode
Anode
0.7 (0.028)
Fläche darf bei Verwendung von TOPLED
®
For TOPLED
®
assembly do not use
elektrisch nicht beschaltet werden.
this area for electrical contact
Fläche darf bei Verwendung von TOPLED
®
For TOPLED
®
assembly do not use
elektrisch nicht beschaltet werden.
this area for electrical contact
For superior solder joint connectivity results we recommend soldering under standard nitrogen atmosphere. Package not
suitable for ultra sonic cleaning.
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Reflow Soldering Profile
Product complies to MSL Level 2 acc. to JEDEC J-STD-020E
0
0s
OHA04525
50
100
150
200
250
300
50 100 150 200 250 300
t
T
˚C
S
t
t
P
t
T
p
240 ˚C
217 ˚C
245 ˚C
25 ˚C
L
Pro󰘰le Feature Symbol Pb-Free (SnAgCu) Assembly Unit
Minimum Recommendation Maximum
Ramp-up rate to preheat*)
25 °C to 150 °C
2 3 K/s
Time tS
TSmin to TSmax
tS60 100 120 s
Ramp-up rate to peak*)
TSmax to TP
2 3 K/s
Liquidus temperature TL217 °C
Time above liquidus temperature tL80 100 s
Peak temperature TP245 260 °C
Time within 5 °C of the speci󰘰ed peak
temperature TP - 5 K
tP10 20 30 s
Ramp-down rate*
TP to 100 °C
3 6 K/s
Time
25 °C to TP
480 s
All temperatures refer to the center of the package, measured on the top of the component
* slope calculation DT/Dt: Dt max. 5 s; ful󰘰llment for the whole T-range
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Taping 8)
OHAY0667
4 (0.157)
2.9 (0.114)
1.5 (0.059) 4 (0.157)
3.6 (0.142)
3.5 (0.138)
2 (0.079)
1.75 (0.069)
8 (0.315)
Cathode/Collector Marking
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Tape and Reel 9)
Reel dimensions [mm]
A W Nmin W1W2 max Pieces per PU
180 mm 8 + 0.3 / - 0.1 60 8.4 + 2 14.4 2000
330 mm 8 + 0.3 / - 0.1 60 8.4 + 2 14.4 8000
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Barcode-Product-Label (BPL)
Dry Packing Process and Materials 8)
OHA00539
OSRAM
Moisture-sensitive label or print
Barcode label
Desiccant
Humidity indicator
Barcode label
OSRAM
Please check the HIC immidiately after
bag opening.
Discard if circles overrun.
Avoid metal contact.
WET
Do not eat.
Comparator
check dot
parts still adequately dry.
examine units, if necessary
examine units, if necessary
5%
15%
10%
bake units
bake units
If wet,
change desiccant
If wet,
Humidity Indicator
MIL-I-8835
If wet,
Moisture Level 3 Floor time 168 Hours Moisture Level 6 Floor time 6 Hours
a) Humidity Indicator Card is > 10% when read at 23 ˚C ± 5 ˚C, or
reflow, vapor-phase reflow, or equivalent processing (peak package
2. After this bag is opened, devices that will be subjected to infrared
1. Shelf life in sealed bag: 24 months at < 40 ˚C and < 90% relative humidity (RH).
Moisture Level 5a
at factory conditions of
(if blank, seal date is identical with date code).
a) Mounted within
b) Stored at
body temp.
3. Devices require baking, before mounting, if:
Bag seal date
Moisture Level 1
Moisture Level 2
Moisture Level 2a
4. If baking is required,
b) 2a or 2b is not met.
Date and time opened:
reference IPC/JEDEC J-STD-033 for bake procedure.
Floor time see below
If blank, see bar code label
Floor time > 1 Year
Floor time 1 Year
Floor time 4 Weeks
10% RH.
_
<
Moisture Level 4
Moisture Level 5
˚C).
OPTO SEMICONDUCTORS
MOISTURE SENSITIVE
This bag contains
CAUTION
Floor time 72 Hours
Floor time 48 Hours
Floor time 24 Hours
30 ˚C/60% RH.
_
<
LEVEL
If blank, see
bar code label
Moisture-sensitive product is packed in a dry bag containing desiccant and a humidity card according JEDEC-STD-033.
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Transportation Packing and Materials 8)
OHA02044
PACKVAR:
R077
Additional TEXT
P-1+Q-1
Multi TOPLED
Muster
OSRAM Opto
Semiconductors
(6P) BATCH NO:
(X) PROD NO:
1
0
(9D) D/C:
11
(1T) LOT NO:
210021998
123GH1234
02
4 5
(Q)QTY:
2000
0144
(G) GROUP:
260 C RT
240 C R
3
220 C R
ML
Bin3:
Bin2: Q-1-20
Bin1: P-1-20
LSY T676
2
2a
Temp ST
R18
DEMY
PACKVAR:
R077
Additional TEXT
P-1+Q-1
Multi TOPLED
Muster
OSRAM Opto
Semiconductors
(6P) BATCH NO:
(X) PROD NO:
1
0
(9D) D/C:
11
(1T) LOT NO:
210021998
123GH1234
024 5
(Q)QTY:
2000
0144
(G) GROUP:
260 C RT
240 C R
3
220 C R
ML
Bin3:
Bin2: Q-1-20
Bin1: P-1-20
LSY T676
2
2a
Temp ST
R18
DEMY
OSRAM
Packing
Sealing label
Barcode label
Moisture Level 3 Floor time 168 Hours Moisture Level 6Floor time 6 Hours
a) Humidity Indicator Card is > 10% when read at 23 ˚C ± 5 ˚C, or
reflow, vapor-phase reflow, or equivalent processing (peak package
2. After this bag is opened, devices that will be subjected to infrared
1. Shelf life in sealed bag: 24 months at < 40 ˚C and < 90% relative humidity (RH).
Moisture Level 5a
at factory conditions of
(if blank, seal date is identical with date code).
a) Mounted within
b) Stored at
body temp.
3. Devices require baking, before mounting, if:
Bag seal date
Moisture Level 1
Moisture Level 2
Moisture Level 2a
4. If baking is required,
b) 2a or 2b is not met.
Date and time opened:
reference IPC/JEDEC J-STD-033 for bake procedure.
Floor time see below
If blank, see bar code label
Floor time > 1 Year
Floor time 1 Year
Floor time 4 Weeks
10% RH.
_
<
Moisture Level 4
Moisture Level 5
˚C).
OPTO SEMICONDUCTORS
MOISTURE SENSITIVE
This bag contains
CAUTION
Floor time 72 Hours
Floor time 48 Hours
Floor time 24 Hours
30 ˚C/60% RH.
_
<
LEVEL
If blank, see
bar code label
Barcode label
Dimensions of transportation box in mm
Width Length Height
200 ± 5 mm 195 ± 5 mm 30 ± 5 mm
352 ± 5 mm 352 ± 5 mm 33 ± 5 mm
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Chip Technology:
5: HOP 2000
B: HOP 2000
C: ATON
D: Low cost ThinGaN/ Thinfilm
(e.g. 6mil)
F: Thinfilm InGaAlP
G: ThinGaN(Thinfilm InGaN)
(Subcon:Sapphire)
´
Encapsulant Type / Lens Properties
7: Colorless clear or white volume conversion
(resin encapsulation)
S: Silicone (with or without diffuser)
3: lens 30° … 70°
5: lens 40° .. 80°
(λdom typ.) CIE 1931/Emission color:
A: 617 nm amber W: white
S: 633 nm super red UW: ultra white
T: 528 nm true green CW: warm white
Y: 587 nm yellow CB: color on demand blue
O: 606 nm orange CR: crystal pink
CP/P: 560 nm pure green
R: 625 nm red
B: 470 nm blue
L: Light
emitting
diode
Package Type
E: PowerTOPLED
Lead / Package Properties
6: folded leads
T: folded leads, improved corrosion stability
(Au-LF), w/o TiO2 jetting
Type Designation System
L A E 6 7 6
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Notes
The evaluation of eye safety occurs according to the standard IEC 62471:2006 (photo biological safety of
lamps and lamp systems). Within the risk grouping system of this IEC standard, the device speci󰘰ed in this
data sheet falls into the class exempt group (exposure time 10000 s). Under real circumstances (for expo-
sure time, conditions of the eye pupils, observation distance), it is assumed that no endangerment to the
eye exists from these devices. As a matter of principle, however, it should be mentioned that intense light
sources have a high secondary exposure potential due to their blinding e󰘯ect. When looking at bright light
sources (e.g. headlights), temporary reduction in visual acuity and afterimages can occur, leading to irrita-
tion, annoyance, visual impairment, and even accidents, depending on the situation.
Subcomponents of this device contain, in addition to other substances, metal 󰘰lled materials including silver.
Metal 󰘰lled materials can be a󰘯ected by environments that contain traces of aggressive substances. There-
fore, we recommend that customers minimize device exposure to aggressive substances during storage,
production, and use. Devices that showed visible discoloration when tested using the described tests above
did show no performance deviations within failure limits during the stated test duration. Respective failure
limits are described in the IEC60810.
For further application related informations please visit www.osram-os.com/appnotes
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Disclaimer
Disclaimer
Language english will prevail in case of any discrepancies or deviations between the two language word-
ings.
Attention please!
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may
contain dangerous substances.
For information on the types in question please contact our Sales Organization.
If printed or downloaded, please 󰘰nd the latest version on the OSRAM OS webside.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest
sales o󰘲ce.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For
packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to
invoice you for any costs incurred.
Product safety devices/applications or medical devices/applications
OSRAM OS components are not developed, constructed or tested for the application as safety relevant
component or for the application in medical devices.
In case Buyer – or Customer supplied by Buyer– considers using OSRAM OS components in product safety
devices/applications or medical devices/applications, Buyer and/or Customer has to inform the local sales
partner of OSRAM OS immediately and OSRAM OS and Buyer and /or Customer will analyze and coordi-
nate the customer-speci󰘰c request between OSRAM OS and Buyer and/or Customer.
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Glossary
1) Brightness: Brightness values are measured during a current pulse of typically 25 ms, with an internal
reproducibility of ±8 % and an expanded uncertainty of ±11 % (acc. to GUM with a coverage factor of
k = 3).
2) Reverse Operation: Reverse Operation of 10 hours is permissible in total. Continuous reverse opera-
tion is not allowed.
3) Wavelength: The wavelength is measured at a current pulse of typically 25 ms, with an internal repro-
ducibility of ±0.5 nm and an expanded uncertainty of ±1 nm (acc. to GUM with a coverage factor of k =
3).
4) Forward Voltage: The forward voltage is measured during a current pulse of typically 8 ms, with an
internal reproducibility of ±0.05 V and an expanded uncertainty of ±0.1 V (acc. to GUM with a coverage
factor of k = 3).
5) Thermal Resistance: Rth max is based on statistic values (6σ).
6) Typical Values: Due to the special conditions of the manufacturing processes of semiconductor devic-
es, the typical data or calculated correlations of technical parameters can only re󰘱ect statistical 󰘰gures.
These do not necessarily correspond to the actual parameters of each single product, which could dif-
fer from the typical data and calculated correlations or the typical characteristic line. If requested, e.g.
because of technical improvements, these typ. data will be changed without any further notice.
7) Characteristic curve: In the range where the line of the graph is broken, you must expect higher di󰘯er-
ences between single devices within one packing unit.
8) Tolerance of Measure: Unless otherwise noted in drawing, tolerances are speci󰘰ed with ±0.1 and
dimensions are speci󰘰ed in mm.
9) Tape and Reel: All dimensions and tolerances are speci󰘰ed acc. IEC 60286-3 and speci󰘰ed in mm.
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Published by OSRAM Opto Semiconductors GmbH
Leibnizstraße 4, D-93055 Regensburg
www.osram-os.com © All Rights Reserved.
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