1N4148 / 1N4150 / 1N4448 / 1N914B
Diodes
Switching diode
1N4148 / 1N4150 / 1N4448 / 1N914B
∗This product is available only outside of Japan.
!
!!
!Applications
High-speed switching
!
!!
!Features
1) Glass sealed envelope. (GSD)
2) High speed.
3) High reliability.
!
!!
!Construction
Silicon epitaxial planar
!
!!
!External dimensions (Units : mm)
φ 0.5±0.1
C
29±129±1
CATHODE BAND (BLACK)
3.8±0.2
A
φ 1.8±0.2
Type No.
ROHM : GSD
EIAJ : −
JEDEC : DO-35
!
!!
!Absolute maximum ratings (Ta = 25°C)
Type
1N4148 100 −65
~
+200−65
~
+200
(V)
V
RM
75
(V)
V
R
450
(mA)
I
FM
150
(mA)
I
O
200
(mA)
I
F
2
(A)
1µs
I
FSM
500
(mW)
P
200
1N4150 50 −65
~
+200−65
~
+200
50 600 200 250 4 500 200
1N4448 100 −65
~
+200−65
~
+200
75 450 150 200 2 500 200
(
°C
)
Tj (
°C
)
Topr (
°C
)
Tstg
(1N914B)
!
!!
!Electrical characteristics (Ta = 25°C)
Type 0.1mA
1.0
0.66
0.62 0.74
0.76
0.86
0.82
0.92
1.0
0.87
1.0
0.54
0.62
0.72
@0.25mA
@1mA
@2mA
@5mA
@10mA
@20mA
@30mA
@50mA
@100mA
@200mA
@250mA
@5µA
75 100 50.0 20 4 4
0.025
5.0 20
75
−50 0.1 50 100.0 50 2.5 4
−100 50.0 20 4 4
@100µA
@@150°C
V
R
(V)
@25°C
V
R
(V)
t
rr
(ns)Cr (pF)I
R
(µA) Max.BV (V) Min.V
F
(V)
I
F
=10mA
f=1MHz
V
R
=0R
L
=100Ω
V
R
=6V
1N4148
1N4150
1N4448
(IN914B) 0.025
5.0 20
75
The upper figure is the minimum V
F
and the lower figure is the maximum V
F
value.
1N4148 / 1N4150 / 1N4448 / 1N914B
Diodes
!
!!
!Electrical characteristic curves (Ta = 25°C)
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.2
0.5
1
2
5
10
20
50
100
FORWARD CURRENT : I
F
(mA)
FORWARD VOLTAGE : V
F
(V)
Fig. 1 Forward characteristics
Ta=125
°C
Ta=75
°C
Ta=25
°C
Ta=−25
°C
0 20 40 60 80 100 120
3
10
30
100
300
1000
3000
REVERSE VOLTAGE : V
R (
V)
REVERSE CURRENT : I
R (
nA)
Fig. 2 Reverse characteristics
70°C
50°C
100°C
Ta=25°C
0
010 20 30
0.5
1.0
1.5
2.0
2.5
3.0
51525
f=1MHz
REVERSE VOLTAGE : VR (V)
CAPACITANCE BETWEEN TERMINALS : C
T
(
pF)
Fig. 3 Capacitance between
terminals characteristics
Fig. 4 Reverse recovery time
characteristics
0
010 20 30
1
2
3
V
R
=
6V
Irr
=
1/10I
R
REVERSE RECOVERY TIME : trr
(
ns)
FORWARD CURRENT : I
F
(
mA)
0.1 1 10 100 1000 10000
1
2
5
10
20
50
100
PULSE
Single pulse
PULSE WIDTH : Tw (ms)
SURGE CURRENT : Isurge (A)
Fig. 5 Surge current characteristics
PULSE GENERATOR
OUTPUT 50ΩSAMPLING
OSCILLOSCOPE
50Ω
0.01µF
100ns
INPUT
D.U.T.
IR
0.1IR
trr
OUTPUT
0
5Ω
Fig. 6 Reverse recovery time (t
rr
) measurement circuit