MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
1
RF Device Data
Freescale Semiconductor
RF LDMOS Wideband Integrated
Power Amplifiers
The MW7IC3825N wideband integrated circuit is designed with on--chip
matching that makes it usable from 3400--3600 MHz. This multi--stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular
base station modulation formats.
!Typical WiMAX Performance: VDD =28Volts,I
DQ1 = 130 mA, IDQ2 = 230 mA,
Pout = 5 Watts Avg., f = 3600 MHz, OFDM 802.16d, 64 QAM 3/4,4Bursts,
10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF.
Power Gain — 25 dB
Power Added Efficiency — 15%
Device Output Signal PAR — 8.5 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset — --48 dBc in 1 MHz Channel Bandwidth
Driver Applications
!Typical WiMAX Performance: VDD =28Volts,I
DQ1 = 190 mA, IDQ2 = 230 mA,
Pout = 0.5 Watts Avg., f = 3400 and 3600 MHz, OFDM 802.16d, 64 QAM 3/4,
4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 23.5 dB
Power Added Efficiency — 3.5%
Device Output Signal PAR — 9.2 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset — --55 dBc in 1 MHz Channel Bandwidth
!Capable of Handling 10:1 VSWR, @ 32 Vdc, 3500 MHz, 25 Watts CW
Output Power
!Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 0 to 44 dBm CW Pout
!Typical Pout @ 1 dB Compression Point ≃30 Watts CW
Features
!100% PAR Tested for Guaranteed Output Power Capability
!Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
!On--Chip Matching (50 Ohm Input, RF Choke to Ground)
!Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
!Integrated ESD Protection
!Greater Negative Gate--Source Voltage Range for Improved Class C Operation
!225"C Capable Plastic Package
!RoHS Compliant
!In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.Select Documentation/Application Notes -- AN1977 or AN1987.
Document Number: MW7IC3825N
Rev. 1, 11/2010
Freescale Semiconductor
Technical Data
MW7IC3825NR1
MW7IC3825GNR1
MW7IC3825NBR1
3400--3600 MHz, 5 W AVG., 28 V
WiMAX
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1886--01
TO--270 WB--16
PLASTIC
MW7IC3825NR1
CASE 1887--01
TO--270 WB--16 GULL
PLASTIC
MW7IC3825GNR1
CASE 1329--09
TO--272 WB--16
PLASTIC
MW7IC3825NBR1
Figure 1. Functional Block Diagram Figure 2. Pin Connections
Quiescent Current
Temperature Compensation (1)
VDS1
RFin
VGS1
RFout/VDS2
VGS2 (Top View)
GND
VGS1
RFin
VGS1
GND
RFout/VDS2
GND
1
2
3
4
5
6
7
8
16
15
14
13
12
VGS2 9
10
GND 11
VDS1
VGS2
NC
NC
VDS1
NC
NC
Note: Exposed backside of the package is
the source terminal for the transistors.
#Freescale Semiconductor, Inc., 2008, 2010.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDS --0.5, +65 Vdc
Gate--Source Voltage VGS --6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg -- 65 to +150 "C
Case Operating Temperature TC150 "C
Operating Junction Temperature (1,2) TJ225 "C
Input Power Pin 45 dBm
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
WiMAX Application Stage 1, 28 Vdc, IDQ1 = 130 mA
(Case Temperature 71"C, Pout = 5 W CW) Stage 2, 28 Vdc, IDQ2 = 230 mA
R$JC
4.7
1.3
"C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 1B (Minimum)
Machine Model (per EIA/JESD22--A115) A (Minimum)
Charge Device Model (per JESD22--C101) IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 3260 "C
Table 5. Electrical Characteristics (TA=25"C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Stage 1 -- Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =65Vdc,V
GS =0Vdc)
IDSS — — 10 %Adc
Zero Gate Voltage Drain Leakage Current
(VDS =28Vdc,V
GS =0Vdc)
IDSS — — 1 %Adc
Gate--Source Leakage Current
(VGS =1.5Vdc,V
DS =0Vdc)
IGSS — — 1 %Adc
Stage 1 -- On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D=25%Adc)
VGS(th) 1.2 22.7 Vdc
Gate Quiescent Voltage
(VDS =28Vdc,I
DQ1 = 130 mA)
VGS(Q) —2.7 —Vdc
Fixture Gate Quiescent Voltage (4)
(VDD =28Vdc,I
DQ1 = 130 mA, Measured in Functional Test)
VGG(Q) 3.5 4.2 5Vdc
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. VGG =1.55xV
GS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
(continued)
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
3
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TA=25"C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Stage 2 -- Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =65Vdc,V
GS =0Vdc)
IDSS — — 10 %Adc
Zero Gate Voltage Drain Leakage Current
(VDS =28Vdc,V
GS =0Vdc)
IDSS — — 1 %Adc
Gate--Source Leakage Current
(VGS =1.5Vdc,V
DS =0Vdc)
IGSS — — 1 %Adc
Stage 2 -- On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D= 120 %Adc)
VGS(th) 1.2 22.7 Vdc
Gate Quiescent Voltage
(VDS =28Vdc,I
DQ2 = 230 mA)
VGS(Q) —2.7 —Vdc
Fixture Gate Quiescent Voltage (1)
(VDD =28Vdc,I
DQ2 = 230 mA, Measured in Functional Test)
VGG(Q) 2.5 3.3 4Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=1Adc)
VDS(on) 0.2 0.5 1.2 Vdc
Stage 2 -- Dynamic Characteristics (2)
Output Capacitance
(VDS =28Vdc&30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Coss —72.3 —pF
Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ1 = 130 mA, IDQ2 = 230 mA, Pout =5WAvg.,
f = 3600 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ &8.5 MHz Offset.
Power Gain Gps 21 25 32 dB
Power Added Efficiency PAE 12 15 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 7.5 8.5 —dB
Adjacent Channel Power Ratio ACPR —-- 4 8 -- 4 5 dBc
Input Return Loss IRL — -- 1 2 -- 6 dB
Typical Performances OFDM Signal -- 10 MHz Channel Bandwidth (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ1 =
130 mA, IDQ2 = 230 mA, Pout = 5 W Avg., f = 3400 MHz and f = 3600 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel
Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.
Relative Constellation Error (4) RCE —-- 3 3 —dB
Error Vector Magnitude (4) EVM —2.2 —%rms
1. VGG =1.22xV
GS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
3. Measurement made with device in straight lead configuration before any lead forming operation is applied.
4. RCE = 20Log(EVM/100).
(continued)
4
RF Device Data
Freescale Semiconductor
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
Table 5. Electrical Characteristics (TA=25"C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ1 = 130 mA, IDQ2 = 230 mA, 3400--3600 MHz Bandwidth
Pout @ 1 dB Compression Point, CW P1dB —30 — W
IMD Symmetry @ 2 W PEP, Pout where IMD Third Order
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
—83 —
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres —90 —MHz
Gain Flatness in 200 MHz Bandwidth @ Pout =5WAvg. GF—0.7 —dB
Average Deviation from Linear Phase in 200 MHz Bandwidth
@P
out =25WCW
'—3.15 —"
Average Group Delay @ Pout = 25 W CW, f = 3500 MHz Delay —3.21 —ns
Part--to--Part Insertion Phase Variation @ Pout =25WCW,
f = 3500 MHz, Six Sigma Window
(' —13.88 —"
Gain Variation over Temperature
(--30"Cto+85"C)
(G — 0.046 —dB/"C
Output Power Variation over Temperature
(--30"Cto+85"C)
(P1dB —0.015 —dB/"C
Typical Driver Performances (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ1 = 190 mA, IDQ2 = 230 mA, Pout = 0.5 W Avg.,
f = 3400 MHz and f = 3600 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @
0.01% Probability on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ &8.5 MHz Offset.
Power Gain Gps —23.5 —dB
Power Added Efficiency PAE —3.5 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR —9.2 —dB
Adjacent Channel Power Ratio ACPR —-- 5 5 —dBc
Input Return Loss IRL — -- 1 2 —dB
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
5
RF Device Data
Freescale Semiconductor
Figure 3. MW7IC3825NR1(GNR1)(NBR1) Test Circuit Schematic
RF
INPUT
RF
OUTPUT
1
2
3
4
5
6
7
8
14
13
12
11
10
9
15
16
NC
DUT
Quiescent Current
Temperature
Compensation
NC
NC
Z39Z38
Z37
Z36
Z34
Z35
Z33
Z31
Z32
C8
Z29Z28
Z24
Z27
Z25
Z26
Z23
Z22
Z21
Z20
Z19Z18Z17Z16Z15
Z40
Z43
Z41
Z44
Z45
Z42
Z14
C4 C3 C2 C12
+
VD2
C10 C11 R3
Z13
C17C7
Z12
Z11
Z10
Z9
Z8
Z7
Z6
Z5Z3
Z4
Z2
C6
Z1
C9C13
R2
C16
VG2
C14C15
R1
VG1 VD1
VGS1
VGS2
C1 C5
VD1
NC
NC
Z1 0.118)x 0.044)Microstrip
Z2 0.205)x 0.044)Microstrip
Z3 0.083)x 0.096)Microstrip
Z4 0.195)x 0.044)Microstrip
Z5 0.094)x 0.132)Microstrip
Z6 0.509)x 0.044)Microstrip
Z7 0.083)x 0.091)Microstrip
Z8 0.372)x 0.044)Microstrip
Z9 0.078)x 0.192)Microstrip
Z10 0.078)x 0.044)Microstrip
Z11 0.079)x 0.141)Microstrip
Z12 0.243)x 0.044)Microstrip
Z13 0.605)x 0.044)Microstrip
Z14 0.232)x 0.340)Microstrip
Z15 0.042)x 0.340)Microstrip
Z16 0.112)x 0.150)Microstrip
Z17 0.230)x 0.090)Microstrip
Z18 0.125)x 0.125)Microstrip
Z19 0.228)x 0.100)Microstrip
Z20 0.076)x 0.165)Microstrip
Z21 0.289)x 0.100)Microstrip
Z22 0.083)x0.110)Microstrip
Z23 0.375)x 0.100)Microstrip
Z24 0.185)x 0.080)Microstrip
Z25 0.079)x 0.020)Microstrip
Z26 0.185)x 0.020)Microstrip
Z27 0.185)x 0.100)Microstrip
Z28 0.093)x 0.100)Microstrip
Z29 0.063)x 0.044)Microstrip
Z30 0.103)x 0.044)Microstrip
Z31 0.080)x 0.121)Microstrip
Z32 0.080)x0.112)Microstrip
Z33 0.193)x 0.044)Microstrip
Z34 0.080)x 0.051)Microstrip
Z35 0.157)x 0.055)Microstrip
Z36 0.080)x 0.044)Microstrip
Z37 0.080)x 0.131)Microstrip
Z38 0.040)x 0.044)Microstrip
Z39 0.073)x 0.044)Microstrip
Z40 0.574)x 0.044)Microstrip
Z41 L = 0.305)wi = 0.150)Angle = 130"Microstrip
Z42 0.523)x 0.044)Microstrip
Z43 0.574)x 0.044)Microstrip
Z44 L = 0.305)wi = 0.150)Angle = 130"Microstrip
Z45 0.523)x 0.044)Microstrip
PCB Taconic TLX8--0300, 0.020),*r=2.55
Z30
6
RF Device Data
Freescale Semiconductor
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
Table 6. MW7IC3825NR1(GNR1)(NBR1) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C13, C14 2.2 %F, 50 V Chip Capacitors C3225X7R1H225M TDK
C2, C3 10 %F, 50 V Chip Capacitors C5750X5R1H106M TDK
C4, C5, C9, C10 2.2 pF Chip Capacitors ATC100B2R2BT500XT ATC
C6, C7 0.5 pF Chip Capacitors ATC100B0R5BT500XT ATC
C8 2 pF Chip Capacitor ATC100B2R0BT500XT ATC
C11 33 pF Chip Capacitor ATC100B330JT500XT ATC
C12 220 %F, 63 V Electrolytic Capacitor 222213668221 BC Components
C15, C16 4.7 %F, 50 V Chip Capacitors C4532X5R1H475M TDK
C17 0.3 pF Chip Capacitor ATC100B0R3BT500XT ATC
R1, R2 1k+, 1/8 W Chip Resistors CRCW08051001FKEA Vishay
R3 10 +, 1/4 W Chip Resistor CRCW120610R0FKEA Vishay
Figure 4. MW7IC3825NR1(GNR1)(NBR1) Test Circuit Component Layout
CUT OUT AREA
MW7IC3825N/NB
Rev. 7
C6
VD1
C15
R1
C14
C7 C17
R2
C16
C13
C9
R3 C11
C10
C8
C1
C5
C4 C3
C2
C12
VD2
VG1
VG2 VD1
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
IRL, INPUT RETURN LOSS (dB)
3400
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 5. WiMAX Broadband Performance @ Pout = 5 Watts Avg.
-- 11
-- 7
-- 8
-- 9
-- 1 0
23.2
25.2
25
24.8
-- 4 9
18
17
16
15
-- 4 4
-- 4 5
-- 4 6
-- 4 7
,D, DRAIN
EFFICIENCY (%)
hD
Gps, POWER GAIN (dB)
24.6
24.4
24
23.8
23.6
23.4
3425 3450 3475 3500 3525 3550 3575 3600
14
-- 4 8
-- 1 2
PARC
PARC (dB)
-- 2
0
-- 0 . 5
-- 1
-- 1 . 5
-- 2 . 5
ACPR (dBc)
24.2
VDD =28Vdc,P
out =5W(Avg.),I
DQ1 = 130 mA, IDQ2 = 230 mA
OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth
Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF
-- 2
-- 0
-- 0 . 5
-- 1
-- 1 . 5
-- 2 . 5
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 6. WiMAX Broadband Performance @ Pout =20dBmAvg.
23.6
25.6
25.4
25.2
-- 5 9
4
3
2
1
-- 5 4
-- 5 5
-- 5 6
-- 5 7
,D, DRAIN
EFFICIENCY (%)
hD
Gps, POWER GAIN (dB)
25
24.8
24.6
24.4
24.2
24
23.8
0
-- 5 8
IRL, INPUT RETURN LOSS (dB)
-- 11
-- 7
-- 8
-- 9
-- 1 0
-- 1 2
VDD =28Vdc,P
out =20dBm(Avg.),I
DQ1 = 130 mA, IDQ2 = 230 mA
OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth
Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF
3400 3425 3450 3475 3500 3525 3550 3575 3600
PARC
ACPR (dBc)
PARC (dB)
Figure 7. Power Gain versus Output Power
@I
DQ1 = 130 mA
100
20
26
1
IDQ2 = 350 mA
290 mA
Pout, OUTPUT POWER (WATTS) CW
VDD =28Vdc
IDQ1 = 130 mA
f = 3500 MHz
110 mA
230 mA
24
23
22
10
Gps, POWER GAIN (dB)
25
175 mA
Figure 8. Power Gain versus Output Power
@I
DQ2 = 230 mA
20
26
1
IDQ1 = 195 mA
Pout, OUTPUT POWER (WATTS) CW
70 mA
24
23
22
10 100
Gps, POWER GAIN (dB)
25
100 mA
VDD =28Vdc
IDQ2 = 230 mA
f = 3500 MHz
21 21
130 mA
160 mA
8
RF Device Data
Freescale Semiconductor
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
TYPICAL CHARACTERISTICS
Figure 9. Intermodulation Distortion Products
versus Tone Spacing
TWO--TONE SPACING (MHz)
10
-- 6 0
-- 1 0
IM3--U
-- 2 0
-- 3 0
-- 5 0
0.1 100
IMD, INTERMODULATION DISTORTION (dBc)
-- 4 0
IM3--L
IM5--U
IM5--L
IM7--L
IM7--U
VDD =28Vdc,P
out = 2 W (PEP), IDQ1 = 130 mA
IDQ2 = 230 mA, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 3500 MHz
Figure 10. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
1
Pout, OUTPUT POWER (WATTS)
-- 1
-- 3
9
-- 2
-- 4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
113 17 21
40
30
25
20
15
10
,D-DRAIN EFFICIENCY (%)
--1dB=6W ,D
ACPR
PARC
ACPR (dBc)
-- 2 0
-- 3 5
-- 4 0
-- 5 0
-- 4 5
25
Gps, POWER GAIN (dB)
24.5
24
23.5
23
22
Gps
100
0
60
-- 5 0
-- 2 0
Pout, OUTPUT POWER (WATTS) AVG. WiMAX
TC=--30_C
25_C
85_C
101
50
40
30
20
-- 2 5
-- 3 0
-- 3 5
-- 4 0
-- 4 5
ACPR (dBc)
Gps ,D
,D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
-- 3 0 _C
25_C
85_C
ACPR
10
Figure 11. WiMAX, ACPR, Power Gain and
Drain Efficiency versus Output Power
1
22.5
-- 5
5
35 -- 2 5
--2dB=8.5W
-- 3 d B = 1 1 . 5 W
VDD =28Vdc,I
DQ1 = 130 mA, IDQ2 = 230 mA
f = 3500 MHz, OFDM 802.16d, 64 QAM 3/4
4 Bursts, 10 MHz Channel Bandwidth
Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF -- 3 0 _C
25_C
85_C
0
-- 3 0
10 MHz Channel Bandwidth, Input Signal
PAR = 9.5 dB @ 0.01% Probability on CCDF
f = 3500 MHz, OFDM 802.16d
64 QAM 3/4,4Bursts
VDD =28Vdc,I
DQ1 = 130 mA, IDQ2 = 230 mA
PARC
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
9
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
250
109
90
TJ, JUNCTION TEMPERATURE ("C)
108
107
104
110 130 150 170 190
MTTF (HOURS)
210 230
2nd Stage
1st Stage
106
4200
-- 2 5
30
2400
-- 4 0
15
S21
f, FREQUENCY (MHz)
Figure 12. Broadband Frequency Response
S11
-- 2 0
25
-- 2 5
20
-- 3 0
15
-- 3 5
34003200300028002600
S11 (dB)
S21 (dB)
VDD =28Vdc
IDQ1 = 130 mA, IDQ2 = 230 mA
3600 4000
Figure 13. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD =28Vdc,P
out = 5 W Avg., and PAE = 15%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
10
5
0
-- 5
-- 1 0
-- 1 5
-- 2 0
3800
-- 5
-- 1 0
-- 1 5
0
5
10
105
WIMAX TEST SIGNAL
10
0.0001
100
0
PEAK--TO--AVERAGE (dB)
Figure 14. OFDM 802.16d Test Signal
10
1
0.1
0.01
0.001
24 68
PROBABILITY (%)
Input Signal
OFDM 802.16d, 64 QAM 3/4,4Bursts
10 MHz Channel Bandwidth, Input Signal
PAR = 9.5 dB @ 0.01% Probability
on CCDF
-- 6 0
-- 1 0
(dB)
-- 2 0
-- 3 0
-- 4 0
-- 5 0
-- 7 0
-- 8 0
-- 9 0
10 MHz
Channel BW
20
515
10
0-- 5
-- 1 0
-- 2 0
f, FREQUENCY (MHz)
Figure 15. WiMAX Spectrum Mask Specifications
-- 1 5
ACPR in 1 MHz
Integrated BW
ACPR in 1 MHz
Integrated BW
10
RF Device Data
Freescale Semiconductor
MW7IC3825NR1 MW7IC3825GNR1 MW7IC3825NBR1
f = 3600 MHz
f = 3400 MHz
Zo=50+
Zload
f = 3600 MHz
f = 3400 MHz
Zsource
VDD =28Vdc,I
DQ1 = 130 mA, IDQ2 = 230 mA, Pout =5WAvg.
f
MHz
Zsource
+
Zload
+
3400 31.82 -- j19.29 4.58 -- j7.62
3425 32.86 -- j19.70 4.42 -- j7.33
3450 33.95 -- j20.93 4.22 -- j7.20
3475 35.11 -- j22.97 4.13 -- j7.22
3500 36.33 -- j25.82 4.13 -- j7.26
3525 37.61 -- j29.49 4.07 -- j7.20
3550 38.95 -- j33.97 3.81 -- j6.99
3575 40.35 -- j39.26 3.48 -- j6.77
3600 41.81 -- j45.37 3.21 -- j6.72
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 16. Series Equivalent Source and Load Impedance
Zsource Zload
Input
Matching
Network
Device
Under Test
Output
Matching
Network
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Table 7. Common Source S--Parameters (VDD =28V,I
DQ1 = 130 mA, IDQ2 = 230 mA, TA=25"C, 50 Ohm System)
f
MHz
S11 S21 S12 S22
|S11|./ |S21|./ |S12|./ |S22|./
3000 0.260 --47.0 7.550 --61.6 0.00485 --43.9 0.724 --87.7
3050 0.177 --63.4 8.610 --102.0 0.00423 --72.7 0.713 --113.0
3100 0.139 --68.0 10.000 --143.0 0.00424 --98.1 0.675 --141.0
3150 0.117 --59.6 11.300 177.0 0.00293 --122.0 0.612 --166.0
3200 0.190 --61.1 13.600 139.0 0.00322 --98.2 0.627 171.0
3250 0.283 --85.6 16.800 95.7 0.00533 --118.0 0.629 138.0
3300 0.395 --118.0 19.900 49.1 0.00762 --146.0 0.547 102.0
3350 0.493 --155.0 22.300 0.9 0.00950 --178.0 0.421 65.9
3400 0.575 166.0 24.000 --48.3 0.0116 148.0 0.235 23.1
3450 0.603 126.0 23.800 --99.4 0.0132 111.0 0.053 --130.0
3500 0.537 82.8 19.900 --155.0 0.0135 58.2 0.409 124.0
3550 0.479 56.7 15.600 165.0 0.00994 27.0 0.509 80.6
3600 0.458 29.8 12.900 128.0 0.00810 1.1 0.585 49.7
3650 0.465 1.3 11.200 94.1 0.00680 --19.7 0.637 21.3
3700 0.427 --27.1 9.830 58.3 0.00636 --42.4 0.672 -- 4 . 3
3750 0.429 --53.0 8.600 25.7 0.00546 --65.7 0.707 --28.9
3800 0.407 --81.6 7.770 -- 7 . 2 0.00476 --82.1 0.730 --53.8
3850 0.395 --110.0 7.020 --39.8 0.00445 --97.7 0.752 --77.2
3900 0.388 --139.0 6.380 --71.8 0.00421 --113.0 0.761 --102.0
3950 0.384 --167.0 5.900 --104.0 0.00454 --126.0 0.779 --125.0
4000 0.389 165.0 5.460 --135.0 0.00531 --145.0 0.779 --150.0
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ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
28
53
19
P3dB = 47.45 dBm (55.6 W)
Pin, INPUT POWER (dBm)
VDD =28Vdc,I
DQ1 = 130 mA, IDQ2 = 230 mA
Pulsed CW, 10 %sec(on), 10% Duty Cycle
f = 3400 MHz
51
49
47
45
43
20 2221 2423 2725
Actual
P1dB = 46.66 dBm (46.3 W)
52
50
46
48
44
2618
Pout, OUTPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
1716
Ideal
Test Impedances per Compression Level
Zsource
+
Zload
+
P1dB 52.4 -- j42.5 3.5 -- j8.5
Figure 17. Pulsed CW Output Power
versus Input Power @ 28 V @ 3400 MHz
30
53
19
Pin, INPUT POWER (dBm)
VDD =28Vdc,I
DQ1 = 130 mA, IDQ2 = 230 mA
Pulsed CW, 10 %sec(on), 10% Duty Cycle
f = 3600 MHz
51
49
47
45
43
20 2221 2423 2725
Actual
Ideal
52
50
46
48
44
2618
Pout, OUTPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
28 29
P3dB = 47.11 dBm (51.5 W)
P1dB = 46.13 dBm (41.0 W)
Test Impedances per Compression Level
Zsource
+
Zload
+
P1dB 126.6 -- j41.9 3.3 -- j8.3
Figure 18. Pulsed CW Output Power
versus Input Power @ 28 V @ 3600 MHz
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PACKAGE DIMENSIONS
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PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
!AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
!AN1955: Thermal Measurement Methodology of RF Power Amplifiers
!AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
!AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
!AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
!EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
!Electromigration MTTF Calculator
!RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Nov. 2008 !Initial Release of Data Sheet
1Nov. 2010 !Corrected data sheet to remove “DC Block” from On--chip Matching feature bullet and replaced with
“RF Choke to Ground”, p. 1
!Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13628, p. 1, 3
!Added “RF Input Choke to Ground” circuitry to Functional Block Diagram and Test Circuit Schematic,
p. 1, 5
!Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 22
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Document Number: MW7IC3825N
Rev. 1, 11/2010
