© 2015 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C 650 V
VDGR TJ= 25C to 150C, RGS = 1M650 V
VGSS Continuous 30 V
VGSM Transient 40 V
ID25 TC= 25C 102 A
IDM TC= 25C, Pulse Width Limited by TJM 204 A
IATC= 25C25A
EAS TC= 25C3J
PDTC= 25C 1040 W
dv/dt IS IDM, VDD VDSS, TJ 150°C 50 V/ns
TJ-55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-264P) 1.13/10 Nm/lb.in
FCMounting Force (PLUS247) 20..120 /4.5..27 N/lb
Weight TO-264P 10 g
PLUS247 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 1mA 650 V
VGS(th) VDS = VGS, ID = 250μA 3.0 5.0 V
IGSS VGS = 30V, VDS = 0V 100 nA
IDSS VDS = VDSS, VGS= 0V 25 A
TJ = 125C 350 A
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 30 m
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXTK102N65X2
IXTX102N65X2
VDSS = 650V
ID25 = 102A
RDS(on)
30m
DS100655A(6/15)
X2-Class
Power MOSFET
Features
International Standard Packages
Low QG
Avalanche Rated
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
G = Gate D = Drain
S = Source Tab = Drain
PLUS247 (IXTX)
Tab
GDS
TO-264P (IXTK)
S
G
DTab
Preliminary Technical Information
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTK102N65X2
IXTX102N65X2
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Terminals: 1 - Gate
2,4 - Drain
3 - Source
PLUS247TM Outline
TO-264P Outline
Terminals: 1 = Gate
2,4 = Drain
3 = Source
4
c
Ab
D
R
Q
A
E
D1
D2
R1
L1
Q1
E1
b1
e
b2
x2
123
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 102 A
ISM Repetitive, Pulse Width Limited by TJM 408 A
VSD IF = IS , VGS = 0V, Note 1 1.4 V
trr 450 ns
QRM 11.7 μC
IRM 52 A
IF = 51A, -di/dt = 100A/s
VR = 100V, VGS = 0V
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 50 82 S
RGi Gate Input Resistance 0.7
Ciss 10.9 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 6100 pF
Crss 12.6 pF
Co(er) 367 pF
Co(tr) 1420 pF
td(on) 37 ns
tr 28 ns
td(off) 67 ns
tf 11 ns
Qg(on) 152 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 57 nC
Qgd 33 nC
RthJC 0.12 C/W
RthCS 0.15 C/W
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2(External)
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
© 2015 IXYS CORPORATION, All Rights Reserved
IXTK102N65X2
IXTX102N65X2
Fig. 1. Output Characteristics @ T
J
= 2 5º C
0
10
20
30
40
50
60
70
80
90
100
110
00.511.522.533.5
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
5V
6V
7V
Fig. 3. Output Characteristics @ T
J
= 125ºC
0
10
20
30
40
50
60
70
80
90
100
110
0123456789
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
5V
6V
4V
Fig . 4. R
DS(on)
No rmalized to I
D
= 51A Value vs.
Junction Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
-50 -25 0 25 50 75 100 125 150
T
J
- D egr ees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 102A
I
D
= 51A
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
40
80
120
160
200
240
0 5 10 15 20 25
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6V
5V
8V
Fig. 5. R
DS(on)
No rmalized t o I
D
= 51A Value vs.
Dra in Curr ent
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0 40 80 120 160 200 240
I
D
- Amperes
R
DS(on)
- Normalized
VGS
= 10V
TJ = 125ºC
TJ = 25º C
Fig. 6. Maximum Drain Current vs.
Case Temperature
0
10
20
30
40
50
60
70
80
90
100
110
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Cen tigr ade
I
D
- Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTK102N65X2
IXTX102N65X2
Fig. 7. Input Admittanc e
0
20
40
60
80
100
120
140
160
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40º C
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
160
0 20 40 60 80 100 120 140 160
I
D
- A m peres
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
50
100
150
200
250
300
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
0 20 40 60 80 100 120 140 160
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 325V
I
D
= 51A
I
G
= 10mA
Fig . 11. Capa c itance
1
10
100
1,000
10,000
100,000
1 10 100 1000
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Output Capacitanc e Stored Energy
0
10
20
30
40
50
60
70
0 100 200 300 400 500 600
V
DS
- Volts
E
OSS
- MicroJoules
© 2015 IXYS CORPORATION, All Rights Reserved IXYS REF: T_102N65X2(X8-R4T50) 6-16-15-A
IXTK102N65X2
IXTX102N65X2
Fig. 13. Forward-Bias Safe Operating Area
0.1
1
10
100
1000
10 100 1,000
V
DS
- Volts
I
D
- Amperes
TJ = 150º C
TC = 25ºC
Single Pul s e
25µs
1ms
100µs
RDS(
on
) Limit
10ms
DC
Fig. 14. Ma ximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pul se Width - Seconds
Z
(th)JC
- ºC / W
Mouser Electronics
Authorized Distributor
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IXTK102N65X2 IXTX102N65X2