TO-
220
F
BYC10X-600P
Hyperfast power diode
9 May 2014 Product data sheet
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1. General description
Hyperfast power diode in a SOD113A (2-lead TO-220-F) plastic package.
2. Features and benefits
•Fast switching
•Isolated plastic package
•Low leakage current
•Low reverse recovery current
•Low thermal resistance
•Reduces switching losses in associated MOSFET or IGBT
3. Applications
•Active PFC in air conditioner
•High frequency switched-mode power supplies
•Continuous Current Mode (CCM) Power Factor Correction (PFC)
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VRRM repetitive peak reverse
voltage
- - 600 V
IF(AV) average forward
current
δ = 0.5; Th ≤ 61 °C; square-wave pulse;
Fig. 1; Fig. 2; Fig. 3
- - 10 A
Static characteristics
VFforward voltage IF = 10 A; Tj = 150 °C; Fig. 6 - 1.3 2 V
Dynamic characteristics
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs;
Tj = 25 °C; Fig. 7
- 12 18 ns
NXP Semiconductors BYC10X-600P
Hyperfast power diode
BYC10X-600P All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 9 May 2014 2 / 9
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 K cathode
2 A anode
mb n.c. mounting base; isolated
21
mb
TO-220F (SOD113A)
A
001aaa020
K
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BYC10X-600P TO-220F plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 2-lead TO-220F "full pack"
SOD113A
7. Marking
Table 4. Marking codes
Type number Marking code
BYC10X-600P BYC10X-600P
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VRRM repetitive peak reverse voltage - 600 V
VRWM crest working reverse voltage - 600 V
VRreverse voltage DC - 600 V
IF(AV) average forward current δ = 0.5; Th ≤ 61 °C; square-wave pulse;
Fig. 1; Fig. 2; Fig. 3
- 10 A
IFRM repetitive peak forward current δ = 0.5; tp = 25 µs; Th ≤ 61 °C; square-
wave pulse
- 20 A
NXP Semiconductors BYC10X-600P
Hyperfast power diode
BYC10X-600P All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 9 May 2014 3 / 9
Symbol Parameter Conditions Min Max Unit
tp = 10 ms; Tj(init) = 25 °C; sine-wave
pulse; Fig. 4
- 150 AIFSM non-repetitive peak forward
current
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave
pulse; Fig. 4
- 165 A
Tstg storage temperature -65 175 °C
Tjjunction temperature - 175 °C
IF(AV) (A)
0 15105
aaa-010181
35
Ptot
(W)
0
5
10
15
20
25
30 δ = 1
0.5
0.2
0.1
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
IF(AV) (A)
0 107.52.5 5
aaa-010182
10
15
5
20
25
Ptot
(W)
0
a = 1.57
1.9
2.2
2.8
4.0
Fig. 2. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
Th (°C)
-50 20015050 1000
aaa-010187
5
10
15
IF(AV)
(A)
0
61 °C
Fig. 3. Forward current as a function of heatsink
temperature; maximum values
tp (s)
10-5 10-2
10-3
10-4
aaa-010184
103
102
104
IFSM
(A)
10
tp
Tj(init) = 25 °C max
IFIFSM
t
Fig. 4. Non-repetitive peak forward current as a
function of pulse width; sinusoidal waveform;
maximum values
NXP Semiconductors BYC10X-600P
Hyperfast power diode
BYC10X-600P All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 9 May 2014 4 / 9
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-h) thermal resistance
from junction to
heatsink
with heatsink compound; Fig. 5 - - 4.8 K/W
Rth(j-a) thermal resistance
from junction to
ambient
in free air - 55 - K/W
aaa-010188
tp (s)
10-6 1 1010-1
10-2
10-5 10-3
10-4
10-2
10-3
1
10-1
10
Zth(j-h)
(K/W)
10-4
δ = 0.5
δ = 0.3
δ = 0.1
δ = 0.05
δ = 0.02
δ = 0.01
single pulse
tp
tp
T
P
t
T
δ =
Fig. 5. Transient thermal impedance from junction to heatsink as a function of pulse duration
10. Isolation characteristics
Table 7. Isolation characteristics
Symbol Parameter Conditions Min Typ Max Unit
Visol(RMS) RMS isolation voltage 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all
pins to external heatsink; sinusoidal
waveform; clean and dust free
- - 2500 V
Cisol isolation capacitance f = 1 MHz; from cathode to external
heatsink
- 10 - pF
11. Characteristics
Table 8. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
VFforward voltage IF = 10 A; Tj = 25 °C; Fig. 6 - 2.5 3.2 V
NXP Semiconductors BYC10X-600P
Hyperfast power diode
BYC10X-600P All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 9 May 2014 5 / 9
Symbol Parameter Conditions Min Typ Max Unit
IF = 10 A; Tj = 150 °C; Fig. 6 - 1.3 2 V
VR = 600 V; Tj = 25 °C - - 10 µAIRreverse current
VR = 600 V; Tj = 150 °C - - 0.8 mA
Dynamic characteristics
IF = 10 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 25 °C; Fig. 7
- 26 - nCQrrecovered charge
IF = 10 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 125 °C; Fig. 7
- 83 - nC
IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs;
Tj = 25 °C; Fig. 7
- 12 18 ns
IF = 10 A; VR = 400 V; dIF/dt = 500 A/
µs; Tj = 25 °C; Fig. 7
- 19 - ns
IF = 10 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 25 °C; Fig. 7
- 26 - ns
trr reverse recovery time
IF = 10 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 125 °C; Fig. 7
- 34 - ns
IF = 10 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 25 °C; Fig. 7
- 2 - AIRM peak reverse recovery
current
IF = 10 A; VR = 200 V; dIF/dt = 200 A/
µs; Tj = 125 °C; Fig. 7
- 4.8 - A
VF (V)
0 431 2
aaa-010185
10
5
15
20
IF
(A)
0
(2) (3)(1)
Fig. 6. Forward current as a function of forward
voltage
003aac562
trr
time
100 %
25 %
IF
dlF
dt
IRIRM
Qr
Fig. 7. Reverse recovery definitions; ramp recovery
NXP Semiconductors BYC10X-600P
Hyperfast power diode
BYC10X-600P All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 9 May 2014 6 / 9
12. Package outline
A
A1
c
Q
k(3)
j(3)
m
z(2)
e
1 2
b
E
P
b1
q
D
T(4)
HE
L
L1(1)
References
Outline
version
European
projection Issue date
IEC JEDEC JEITA
SOD113A 2 LEADS TO220F
sod113a_po
14-01-14
14-04-10
Unit
mm
max
nom
min
4.6 3.1 1.1 0.7 15.8 10.3
19.0
2.8
A
Dimensions (mm are the original dimensions)
Note
1. Terminals are uncontrolled within zone L1.
2. z is depth of T.
3. Dot lines area designs may vary.
4. Eject pin mark is for reference only.
Plastic single-ended package; isolated heasink mounted;
1 mounting hole; 2-lead TO-220F 'full pack' SOD113A
A1b
0.9
b1c D E
0.4 0.8
W z(2)
e
5.08
HE
max j(3) k(3) L L1(1) m
6.5
P
3.2
2.6
Q q
2.55
1.7 13.50.4 2.84.0 2.5 0.9 0.4 15.2 9.7 2.30.7 6.3 3.0
2.7 14.40.8 3.3
T(4)
0 5 10 mm
scale
w
Fig. 8. Package outline TO-220F (SOD113A)
NXP Semiconductors BYC10X-600P
Hyperfast power diode
BYC10X-600P All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 9 May 2014 7 / 9
13. Legal information
13.1 Data sheet status
Document
status [1][2]
Product
status [3]
Definition
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
13.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
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representation or warranty that such applications will be suitable for the
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Customers are responsible for the design and operation of their
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and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
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applying the customer’s general terms and conditions with regard to the
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No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
NXP Semiconductors BYC10X-600P
Hyperfast power diode
BYC10X-600P All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 9 May 2014 8 / 9
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
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In the event that customer uses the product for design-in and use in
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13.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-
CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight,
MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug,
TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
NXP Semiconductors BYC10X-600P
Hyperfast power diode
BYC10X-600P All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 9 May 2014 9 / 9
14. Contents
1 General description ............................................... 1
2 Features and benefits ............................................1
3 Applications ........................................................... 1
4 Quick reference data ............................................. 1
5 Pinning information ............................................... 2
6 Ordering information .............................................2
7 Marking ................................................................... 2
8 Limiting values .......................................................2
9 Thermal characteristics .........................................4
10 Isolation characteristics ........................................4
11 Characteristics .......................................................4
12 Package outline ..................................................... 6
13 Legal information ...................................................7
13.1 Data sheet status ................................................. 7
13.2 Definitions .............................................................7
13.3 Disclaimers ........................................................... 7
13.4 Trademarks .......................................................... 8
© NXP Semiconductors N.V. 2014. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 9 May 2014
