SIEMENS NPN Silicon Darlington Transistors BCV 27 BCV47 @ For general AF applications High collector current @ High current gain @ Complementary types: BCV 26, BCV 46 (PNP) VPSCS161 Type Marking Ordering Code Pin Configuration | Package (tape and reel) 1 2 3 BCV 27 FFs Q62702-C1474 B E C |SOT-23 BCV 47 FGs Q62702-C1501 Maximum Ratings Parameter Symbol Values Unit BCV 27 BCV 47 Collector-emitter voltage Vceo 30 60 Vv Collector-base voltage Vepo 40 80 Emitter-base voitage Veo 10 10 Collector current Ic 500 mA Peak collector current Tom 800 Base current Ig 100 Peak base current Tem 200 Total power dissipation, Ts = 74 C | Prot 360 mw Junction temperature Tj 150 Cc Storage temperature range Taig ~ 65... + 150 Thermal Resistance Junction - ambient?) Rinaa < 280 KAW Junction - soldering point Rinvs < 210 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy peb 40 mm x 40 mm x 1.5 mm/6 cm? Cu. Semiconductor Group 829 5,91 SIEMENS BCV 27 BCV 47 Electrical Characteristics at Ta = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. | typ. | max. DC characteristics Collector-emitter breakdown voltage Vieryceo Vv Ic=10mMA BCV 27 30 ~ - BCV 47 60 ~ - Collector-base breakdown voltage Viprycao Ic = 100 pA BCV 27 40 ~ - BCV 47 80 ~ ~ Emitter-base breakdown voltage, Je = 10 pA Verjeno | 10 ~ - Collector cutoff current Tcpo Vcs = 30 V BCV 27 - ~ 100 nA Vcp = 60 V BCV 47 - ~ 100 nA Vee = 30 V, Ta = 150C BCV 27 - ~ 10 pA Vce = 60 V, Ta = 150C BCV 47 - ~ 10 pA Emitter cutoff current, Vea = 4 V TeBo - ~ 100 nA DC current gain) Are ~ Ic = 100 pA, Vee=1V BCV 27 4000 |~ - BCV 47 2000 |- - Ic= 10 mA, Vee=5V BCV 27 10000 | ~ ~ BCV 47 4000 |- _ Ic = 100 mA, Vee=5V BCV 27 20000 | ~ - BCV 47 10000 | ~ - 1c =0.5A, Vee=5V BCV 27 4000 | - - BCV 47 2000 |- - Collector-emitter saturation voltage") Veesat - ~ 1 Vv Ic = 100 mA, Jp = 0.1 MA Base-emitter saturation voltage") Vecsat - ~ 1.5 Ic = 100 mA, Js = 0.1 MA AC characteristics Transition frequency f - 170 ~|- MHz Ic = 50 mA, Vee = 5 V, f= 20 MHz Output capacitance Cobo - 3.5 - pF Ves = 10 V, f= 1 MHz Pulse test: 1s 300 ys, D= 2%. Semiconductor Group SIEMENS BCV 27 BCV 47 Total power dissipation Pia = f (Ta"; Ts) * Package mounted on epoxy 400 BCv 27/47 EHPO0G299 mW 1 \ Pos 300 N \ N NE 200 7, \ 100 \ N \ 0 0 50 too 8=*Cs150 I, fF, Permissible pulse load Pict max/ Pio pc = f (tp) 103 & arf EHPOO3O1 Prot max 5 Prot bo 10? .00 5 01 02 Hl ct ie 95 | il 2 10! ll | ch 5 j mt 5 i Ht a Te TT a il ll PU TON TCC 10 | lmmics Se 108 10 10% 103 107% s 10 ~- fy Semiconductor Group 831 Collector-base capacitance Ccxso = f (Vceo) Emitter-base capacitance Creo = f (Veso) BCV 27/47 EHPOO300 10 v0! > Vega Veoa) 10 0 10! Transition frequency ft = f (/c) Vee=5V 3 Bev 27/47 ERPOO303 10 f, MHz 10! 105 10? |, 10! mA SIEMENS Base-emitter saturation voltage Ic = f (Veesat) hee = 1000 103 Bev 27/47 EHPOOI04 fg mA 10? 10! 0 10 0 1.0 20 y 3.0 __ Vee sot Collector cutoff current Joao = f (Ta) Ves = VcE max 4 av 27/47 EHPOO306 10 Togg nA 10 10? 10! a 100 50 100 *C 150 . |, Semiconductor Group BCV 27 BCV 47 Collector-emitter saturation voltage Ic = f (Vesa) hre = 1000 os RYH? EHPOOS0S fi, ma 102 10! 0 "0 0 0.5 1O oy 15 - Votsat DC current gain Are = f (fc) Vee=5V +08 BCV 27/47 EHPOO307 $ bee 107 ma 10 i, 107" ~ 40 10! 832