AUIRFZ44V
HEXFET® Power MOSFET
11/1/11
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S
D
G
Features
lAdvanced Planar Technology
lLow On-Resistance
lDynamic dV/dT Rating
l175°C Operating Temperature
lFast Switching
lFully Avalanche Rated
lRepetitive Avalanche Allowed up to Tjmax
lLead-Free, RoHS Compliant
lAutomotive Qualified *
Specifically designed for Automotive applications, this
stripe planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve low
on-resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety
of other applications.
Description
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
GDS
Gate Drain Source
TO-220AB
AUIRFZ44V
D
S
D
G
V
(BR)DSS
60V
R
DS(on)
max. 16.5mΩ
I
D
55A
AUTOMOTIVE GRADE
Parameter
Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V A
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25°C Power Dissipation
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
E
AS
Single Pulse Avalanche Energy
d
mJ
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Energy
c
mJ
dv/dt Peak Diode Recovery dv/dt
e
V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter Typ. Max. Units
R
θ
Junction-to-Case ––– 1.3
R
θ
CS
Case-to-Sink, Flat, Greased Surface 0.50 –––
R
θ
JA
Junction-to-Ambient (PCB mounted) ––– 62
55
11
10 lbf
y
in (1.1N
y
m)
-55 to + 175
°C/W
300 (1.6mm from case )
0.77
±20
4.5
W
115
115
Max.
55
39
220
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
PD - 96415
AUIRFZ44V
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S
D
G
S
D
G
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 89μH, RG = 25Ω, IAS = 51A. (See Figure 12)
ISD ≤ 51A, di/dt ≤ 227A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C
Pulse width ≤ 300μs; duty cycle ≤ 2%.
Notes:
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V
(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V
Δ
V
(BR)DSS
/
Δ
T
J Breakdown Voltage Temp. Coefficient ––– 0.062 ––– V/°C
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 16.5
V
GS(th) Gate Threshold Voltage 2.0 ––– 4.0 V
gfs Forward Transconductance 24 ––– ––– S
I
DSS Drain-to-Source Leakage Current ––– ––– 25 μA
––– ––– 250
I
GSS Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
gTotal Gate Charge ––– ––– 67
Q
gs Gate-to-Source Charge ––– ––– 18 nC
Q
gd Gate-to-Drain ("Miller") Charge ––– ––– 25
t
d(on) Turn-On Delay Time ––– 13 –––
t
rRise Time –––97–––
t
d(off) Turn-Off Delay Time ––– 40 ––– ns
t
fFall Time ––– 57 –––
L
DInternal Drain Inductance Between lead,
nH 6mm (0.25in.)
L
SInternal Source Inductance Between lead,
and center of die contact
C
iss Input Capacitance ––– 1812 –––
C
oss Output Capacitance ––– 393 –––
C
rss Reverse Transfer Capacitance ––– 103 ––– ƒ = 1.0MHz, See Fig.5
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode) A
I
SM
Pulsed Source Current
(Body Diode)
c
V
SD
Diode Forward Voltage ––– ––– 2.5 V
t
rr
Reverse Recovery Time ––– 70 105 ns
Q
rr
Reverse Recovery Charge ––– 146 219 nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
pF
––– MOSFET symbol
showing the
–––
–––
–––
55
220
––– –––
––––––
4.5
7.5
VGS = 10V, See Fig.6 and 13
f
VDD = 30V
ID = 51A
RG = 9.1Ω
T
J
= 25°C, I
S
= 51A, V
GS
= 0V
f
T
J
= 25°C, I
F
= 51A
di/dt = 100A/μs
f
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 31A
f
VDS = VGS, ID = 250μA
VDS = 60V, VGS = 0V
VDS = 48V, VGS = 0V, TJ = 150°C
integral reverse
p-n junction diode.
VDS = 25V, ID = 31A
f
ID = 51A
VDS = 48V
Conditions
RD = 0.6Ω, See Fig.10
f
VGS = 0V
VDS = 25V
VGS = 20V
VGS = -20V
mΩ
AUIRFZ44V
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Qualification Information
†
Moisture Sensitivity Level
3L-TO-220
N/A
Qualification Level
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
Charged Device Model Class C5(+/- 2000V )
†††
(per AEC-Q101-005)
RoHS Compliant Yes
ESD
Machine Model Class M3(+/- 400V )
†††
(per AEC-Q101-002)
Human Body Model Class H1B(+/- 1000V )
†††
(per AEC-Q101-001)
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
††† Highest passing voltage
AUIRFZ44V
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Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
0.1
1
10
100
1000
0.1 1 10 100
20μs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
0.1 1 10 100
20μs PULSE WIDTH
T = 175 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
-60 -40 -20 020 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
55A
1
10
100
1000
45678910 11 12
V = 25V
20μs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 175 C
J°
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Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 8. Maximum Safe Operating Area
110 100
VDS, Drain-to-Source Voltage (V)
0
1000
2000
3000
4000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Cis = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
020 40 60 80 100
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D51A
V = 12V
DS
V = 30V
DS
V = 48V
DS
1
10
100
1000
1 10 100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 175 C
= 25 C
°
°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
0.1
1
10
100
1000
0.2 0.7 1.2 1.7 2.2
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 175 C
J°
AUIRFZ44V
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25 50 75 100 125 150 175
0
10
20
30
40
50
60
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
RD
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
VGS
RG
D.U.T.
10V
+
-
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
VGS
RG
D.U.T.
10V
VDD
AUIRFZ44V
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D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3μF
50KΩ
.2μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
25 50 75 100 125 150 175
0
50
100
150
200
250
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
21A
36A
51A
Q
G
Q
GS
Q
GD
V
G
Charge
10 V
AUIRFZ44V
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Fig 14. For N-Channel HEXFETS
Peak Diode Recovery dv/dt Test Circuit
+
-
+
+
+
-
-
-
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P. W .
Period
* V
GS = 5V for Logic Level Devices
*
AUIRFZ44V
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TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
YWWA
XX or XX
Part Number
IR Logo
Lot Code
AUFZ44V
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
AUIRFZ44V
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Ordering Information
Base part Package Type Standard Pack Complete Part Number
Form Quantity
AUIRFZ44V TO-220 Tube 50 AUIRFZ44V
AUIRFZ44V
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with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary
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