©2004 Littelfuse, Inc. E3 - 1 http://www.littelfuse.com
Thyristor Product Catalog +1 972-580-7777
U.L. RECOGNIZED
File #E71639
Quadrac
Internally Triggered Triacs (4 A to 15 A)
E3
General Description
Teccor’s Quadrac devices are triacs that include a diac trigger
mounted inside the same package. This device, developed by
Teccor, saves the user the expense and assembly time of buying
a discrete diac and assembling in conjunction with a gated triac.
Also, the alternistor Quadrac device (QxxxxLTH) eliminates the
need for a snubber network.
The Quadrac device is a bidirectional AC switch and is gate con-
trolled for either polarity of main terminal voltage. Its primary pur-
pose is for AC switching and phase control applications such as
speed controls, temperature modulation controls, and lighting
controls where noise immunity is required.
Triac current capacities range from 4 A to 15 A with voltage
ranges from 200 V to 600 V. Quadrac devices are available in the
TO-220 package.
The TO-220 package is electrically isolated to 2500 V rms from
the leads to mounting surface. 4000 V rms is available on special
order. This means that no external isolation is required, thus
eliminating the need for separate insulators and insulator-mount-
ing steps and saving dollars over “hot tab” devices.
All Teccor triac and diac chips have glass-passivated junctions to
ensure long-term device reliability and parameter stability.
Variations of devices in this data sheet are available for custom
design applications. Consult the factory for more information.
Features
• Glass-passivated junctions
• Electrically-isolated package
• Internal trigger diac
• High surge capability — up to 200 A
• High voltage capability — 200 V to 600 V
TO-220
MT2 MT1
T
E3
Quadrac Data Sheets
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+1 972-580-7777 Thyristor Product Catalog
Specific Test Conditions
[∆V±] — Dynamic breakback voltage (forward and reverse)
∆VBO — Breakover voltage symmetry
CT — Trigger firing capacitance
di/dt — Maximum rate-of-change of on-state current
dv/dt — Critical rate-of-rise of off-state voltage at rated VDRM gate open
dv/dt(c) — Critical rate-of-rise of commutation voltage at rated VDRM
and IT(RMS) commutating di/dt = 0.54 rated IT(RMS)/ms; gate
unenergized
I2t — RMS surge (non-repetitive) on-state current for period of 8.3 ms
for fusing
IBO — Peak breakover current
IDRM — Peak off-state current gate open; VDRM = maximum rated value
IGTM — Peak gate trigger current (10 µs Max)
IH — Holding current; gate open
IT(RMS) — RMS on-state current, conduction angle of 360°
ITSM — Peak one-cycle surge
tgt — Gate controlled turn-on time
VBO — Breakover voltage (forward and reverse)
VDRM — Repetitive peak blocking voltage
VTM — Peak on-state voltage at maximum rated RMS current
General Notes
• All measurements are made at 60 Hz with resistive load at an ambi-
ent temperature of +25 °C unless otherwise specified.
• Operating temperature range (TJ) is -40 °C to +125 °C.
• Storage temperature range (TS) is -40 °C to +125 °C.
• Lead solder temperature is a maximum of +230 °C for 10 seconds
maximum; ≥1/16" (1.59 mm) from case.
• The case temperature (TC) is measured as shown on dimensional
outline drawings. See “Package Dimensions” section of this
catalog.
Electrical Specification Notes
(1) For either polarity of MT2 with reference to MT1
(2) See Figure E3.1 for IH versus TC.
(3) See Figure E3.4 and Figure E3.5 for iT versus vT
.
(4) See Figure E3.9 for surge ratings with specific durations.
IT(RMS)
Part No.
VDRM IDRM VTM
Trigger Diac Specifications (T–MT1)
Isolated ∆VBO VBO [∆V± ]I
BO CT
(5)
TO-220
(1)
Volts
(1) (10)
mAmps
(1) (3)
Volts
(7)
Volts
(6)
Volts
(6)
Volts µAmps
(11)
µFarads
TC =
25 °C
TC =
100 °C
TC =
125 °C TC = 25 °C
See “Package Dimensions” section
for variations. (12) MIN MAX MAX MAX MIN MAX MIN MAX MAX
4A
Q2004LT 200 0.05 0.5 21.6 333 43 525 0.1
Q4004LT 400 0.05 0.5 21.6 333 43 525 0.1
Q6004LT 600 0.05 0.5 21.6 333 43 525 0.1
6A
Q2006LT 200 0.05 0.5 2 1.6 3 33 43 5 25 0.1
Q4006LT 400 0.05 0.5 2 1.6 3 33 43 5 25 0.1
Q6006LT 600 0.05 0.5 2 1.6 3 33 43 5 25 0.1
Q4006LTH 400 0.05 0.5 2 1.6 3 33 43 5 25 0.1
Q6006LTH 600 0.05 0.5 2 1.6 3 33 43 5 25 0.1
8A
Q2008LT 200 0.05 0.5 21.6 333 43 525 0.1
Q4008LT 400 0.05 0.5 21.6 333 43 525 0.1
Q6008LT 600 0.05 0.5 21.6 333 43 525 0.1
Q4008LTH 400 0.05 0.5 21.6 333 43 525 0.1
Q6008LTH 600 0.05 0.5 21.6 333 43 525 0.1
10 A
Q2010LT 200 0.05 0.5 2 1.6 3 33 43 5 25 0.1
Q4010LT 400 0.05 0.5 2 1.6 3 33 43 5 25 0.1
Q6010LT 600 0.05 0.5 2 1.6 3 33 43 5 25 0.1
Q4010LTH 400 0.05 0.5 2 1.6 3 33 43 5 25 0.1
Q6010LTH 600 0.05 0.5 2 1.6 3 33 43 5 25 0.1
15 A
Q2015LT 200 0.05 0.5 21.6 333 43 525 0.1
Q4015LT 400 0.05 0.5 21.6 333 43 525 0.1
Q6015LT 600 0.05 0.5 21.6 333 43 525 0.1
Q4015LTH 400 0.05 0.5 21.6 333 43 525 0.1
Q6015LTH 600 0.05 0.5 21.6 333 43 525 0.1
MT1 MT2
T
Data Sheets Quadrac
©2004 Littelfuse, Inc. E3 - 3 http://www.littelfuse.com
Thyristor Product Catalog +1 972-580-7777
(5) See Figure E3.6, Figure E3.7, and Figure E3.8 for current rating at
specific operating temperature.
(6) See Figure E3.2 and Figure E3.3 for test circuit.
(7) ∆VBO = [+ VBO] - [- VBO]
(8) See Figure E3.7 and Figure E3.8 for maximum allowable case
temperature at maximum rated current.
(9) Trigger firing capacitance = 0.1 µF with 0.1 µs rise time
(10) TC = TJ for test conditions in off state
(11) Maximum required value to ensure sufficient gate current
(12) See package outlines for lead form configurations. When ordering
special lead forming, add type number as suffix to part number.
Electrical Isolation
All Teccor isolated Quadrac packages withstand a minimum high
potential test of 2500 V ac rms from leads to mounting tab over
the operating temperature range of the device. The following iso-
lation table shows standard and optional isolation ratings.
* UL Recognized File #E71639
**For 4000 V isolation, use “V” suffix in part number.
IHITSM dv/dt(c) dv/dt tgt I2tIGTM di/dt
(1) (2)
mAmps
(4) (8)
Amps
(1) (5) (8)
Volts/µSec
(1)
Volts/µSec
(6) (9)
µSec Amps2Sec Amps
(9)
Amps/µSec
TC =
100 °C
TC =
125 °C
MAX 60/50Hz MIN MIN TYP
40 55/46 375 50 312.5 1.2 50
40 55/46 375 50 312.5 1.2 50
40 55/46 350 50 312.5 1.2 50
50 80/65 4 150 100 3 26.5 1.5 70
50 80/65 4 150 100 3 26.5 1.5 70
50 80/65 4 125 85 3 26.5 1.5 70
50 80/65 25 575 450 3 26.5 1.5 70
50 80/65 25 425 350 3 26.5 1.5 70
60 100/83 4175 120 341 1.5 70
60 100/83 4175 120 341 1.5 70
60 100/83 4150 100 341 1.5 70
60 100/83 25 575 450 341 1.5 70
60 100/83 25 425 350 341 1.5 70
60 120/100 4 200 150 3 60 1.5 70
60 120/100 4 200 150 3 60 1.5 70
60 120/100 4 175 120 3 60 1.5 70
60 120/100 30 925 700 3 60 1.5 70
60 120/100 30 775 600 3 60 1.5 70
70 200/167 4300 200 3166 1.5 100
70 200/167 4300 200 3166 1.5 100
70 200/167 4200 150 3166 1.5 100
70 200/167 30 925 700 3166 1.5 100
70 200/167 30 775 600 3166 1.5 100
Thermal Resistance (Steady State)
RθJC [RθJA] °C/W (TYP)
TYPE Isolated TO-220
4A 3.6 [50]
6A 3.3
8A 2.8
10 A 2.6
15 A 2.1
Electrical Isolation
from Leads to Mounting Tab *
VACRMS TYPE
2500 Standard
4000 Optional **
Quadrac Data Sheets
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+1 972-580-7777 Thyristor Product Catalog
Figure E3.1 Normalized DC Holding Current versus Case Temperature
Figure E3.2 Test Circuit
Figure E3.3 Test Circuit Waveforms
Figure E3.4 On-state Current versus On-state Voltage (Typical)
(4 A to 10 A)
Figure E3.5 On-state Current versus On-state Voltage (Typical) (15 A)
Figure E3.6 Maximum Allowable Ambient Temperature versus
On-state Current
Case Temperature (TC) – ˚C
-40 -15 +25 +65 +105
IH
IH(TC = 25 ˚C)
2.0
1.5
1.0
.5
0
INITIAL ON-STATE CURRENT
= 200 mA DC 4 A to 10 A
= 400 mA DC 15 A
Ratio of
+125
120 V
60 Hz
RL
D.U.T. MT2
MT1
VCCT = 0.1 µF
T
V
C
∆V+
-V
BO
∆V-
+V
BO
20
18
16
14
12
10
8
6
4
2
00 0.6 0.8 1.0 1.2 1.4 1.6
Positive or Negative
Instantaneous On-state Current (iT) – Amps
Positive or Negative
Instantaneous On-state Voltage (vT) – Volts
6 A, 8 A, and 10 A
4 A
T
C
= 25 ˚C
90
80
70
60
50
40
30
20
10
000.6 0.8 1.0 1.2 1.4 1.6
Positive or Negative
Instantaneous On-state Current (iT) – Amps
15 A
TC = 25˚C
1.8
Positive or Negative
Instantaneous On-state Voltage (vT) – Volts
120
100
80
60
40
20
RMS On-state Current [I
T(RMS)
] – Amps
Maximum Allowable Ambient Temperature (T
A
) – ˚C
25
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
4 A
Data Sheets Quadrac
©2004 Littelfuse, Inc. E3 - 5 http://www.littelfuse.com
Thyristor Product Catalog +1 972-580-7777
Figure E3.7 Maximum Allowable Case Temperature versus
On-state Current (4 A)
Figure E3.8 Maximum Allowable Case Temperature versus
On-state Current (6 A to 15 A)
Figure E3.9 Peak Surge Current versus Surge Current Duration
Figure E3.10 Power Dissipation (Typical) versus On-state Current (4 A)
Figure E3.11 Power Dissipation (Typical) versus On-state Current
(6 A to 10 A and 15 A)
Figure E3.12 Normalized diac VBO versus Junction Temperature
RMS On-state Current [I
T(RMS)
] – Amps
0 .5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Maximum Allowable Case Temperature (T
C
) – ˚C
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360
˚
CASE TEMPERATURE: Measured
as shown on Dimensional Drawings
130
120
110
100
90
80
70
600
4 A
RMS On-state Current [IT(RMS)] – Amps
02.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0
Maximum Allowable Case Temperature (TC) – ˚C
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360˚
CASE TEMPERATURE: Measured
as shown on Dimensional Drawings
130
120
110
100
90
80
70
60
0
6 A
10 A
8 A
15 A
200
120
40
1 2 3 4 5 6 8 10 20 3040 60 80100 200 300 600 1000
80
60
50
100
8
6
5
10
30
20
4
1
3
2
Surge Current Duration – Full Cycles
Peak Surge (Non-repetitive)
On-state Current (ITSM) – Amps
SUPPLY FREQUENCY: 60 Hz Sinusoidal
LOAD: Resistive
RMS ON-STATE CURRENT [IT(RMS)]: Maximum
Rated Value at Specified Case Temperature
NOTES:
1) Gates control may be lost during
and immediately following surge
current interval.
2) Overload may not be repeated until
junction temperature has returned to
steady state rated value.
15 A
10 A
8 A
6 A
4 A
Average On-state Power Dissipation [PD(AV)] – Watts
RMS On-state Current [IT(RMS)] – Amps
4.0
3.0
2.0
1.0
001.0 2.0 3.0 4.0 5.0
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360˚
4 A
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 360˚
18
16
14
12
10
8
6
4
2
016
14
12
10
8
6
4
2
0
RMS On-state Current [I
T(RMS)
] – Amps
Average On-state Power Dissipation [P
D(AV)
] – Watts
15 A
6 A to 10 A
-8
-6
-4
-2
0
+2
+4
-40 -20 0 +20 +40 +60 +80 +100 +120 +140
Junction Temperature (TJ) – ˚C
Percentage of VBO Change – %
Notes
