IRF130SMD05DSGN MECHANICAL DATA Dimensions in mm (inches) 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) 3.05 (0.120) 0.127 (0.005) 3 VDSS ID(cont) RDS(on) 10.16 (0.400) 5.72 (.225) 0.76 (0.030) min. 1 2 100V 11A 0.19 FEATURES 0.127 (0.005) 0.127 (0.005) 16 PLCS 0.50(0.020) 0.50 (0.020) max. 7.26 (0.286) * HERMETICALLY SEALED * SIMPLE DRIVE REQUIREMENTS * LIGHTWEIGHT SMD 05 PAD1 = GATE N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS PAD 2 DRAIN PAD3 = SOURCE * SCREENING OPTIONS AVAILABLE * ALL LEADS ISOLATED FROM CASE ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VGS Gate - Source Voltage 20V ID Continuous Drain Current @ Tcase = 25C 11A ID Continuous Drain Current @ Tcase = 100C 7A IDM Pulsed Drain Current 44A PD Power Dissipation @ Tcase = 25C 45W Linear Derating Factor 0.36W/C TJ , Tstg Operating and Storage Temperature Range -55 to 150C RJC Thermal Resistance Junction to Case 2.8C/W max. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 6565 Issue 1 IRF130SMD05DSGN ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit STATIC ELECTRICAL RATINGS BVDSS Drain - Source Breakdown Voltage VGS = 0 BVDSS Temperature Coefficient of Reference to 25C TJ RDS(on) ID = 1mA 100 V 0.1 V / C Breakdown Voltage ID = 1mA Static Drain - Source On-State VGS = 10V ID = 7A 0.19 Resistance VGS = 10V ID = 11A 0.22 VDS = VGS ID = 250A 2 VDS 15V IDS = 7A 3 VGS = 0 VDS = 0.8BVDSS 25 TJ = 125C 250 VGS(th) Gate Threshold Voltage 4 gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS Forward Gate - Source Leakage VGS = 20V 100 IGSS Reverse Gate - Source Leakage VGS = -20V -100 V () S( A nA DYNAMIC CHARACTERISTICS Ciss Input Capacitance VGS = 0 650 Coss Output Capacitance VDS = 25V 240 Crss Reverse Transfer Capacitance f = 1MHz 44 Qg Total Gate Charge Qgs Gate - Source Charge Qgd Gate - Drain ("Miller") Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time VGS = 10V ID = 11A pF 12.8 28.5 ID = 11A 1.0 6.3 VDS = 0.5BVDSS 3.8 16.6 VDS = 0.5BVDSS nC nC 30 VDD = 50V 75 ID = 11A 40 RG = 7.5 ns 45 SOURCE - DRAIN DIODE CHARACTERISTICS IS Continuous Source Current 11 ISM Pulse Source Current 43 VSD Diode Forward Voltage trr Reverse Recovery Time IS = 11A Qrr Reverse Recovery Charge di / dt 100A/s VDD 50V IS = 11A TJ = 25C VGS = 0 TJ = 25C A 1.5 V 300 ns C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 6565 Issue 1