IRF130SMD05DSGN
VGS Gate – Source Voltage
IDContinuous Drain Current @ Tcase = 25°C
IDContinuous Drain Current @ Tcase = 100°C
IDM Pulsed Drain Current
PDPower Dissipation @ Tcase = 25°C
Linear Derating Factor
TJ, Tstg Operating and Storage Temperature Range
RθJC Thermal Resistance Junction to Case
±20V
11A
7A
44A
45W
0.36W/°C
–55 to 150°C
2.8°C/W max.
MECHANICAL DATA
Dimensions in mm (inches)
2
1 3
2.41 (0.095)
(0.030)
min.
3.05 (0.120)
5.72 (.225)
0.127 (0.005)
(0.296)
10.16 (0.400)
0.76
(0.030)
min.
3.175 (0.125)
Max.
0.50 (0.020)
max.
7.54
0.76
2.41 (0.095)
0.127 (0.005)
(0.286) 7.26
16 PLCS
0.50(0.020)
0.127 (0.005)
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
SMD 05
N–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
FEATURES
• HERMETICALLY SEALED
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• SCREENING OPTIONS AVAILABLE
• ALL LEADS ISOLATED FROM CASE
VDSS 100V
ID(cont) 11A
RDS(on) 0.19ΩΩ
PAD1 = GATE PAD 2 DRAIN PAD3 = SOURCE
Document Number 6565
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
IRF130SMD05DSGN
Parameter Test Conditions Min. Typ. Max. Unit
VGS = 0 ID= 1mA
Reference to 25°C
ID= 1mA
VGS = 10V ID= 7A
VGS = 10V ID= 11A
VDS = VGS ID= 250μA
VDS ≥15V IDS = 7A
VGS = 0 VDS = 0.8BVDSS
TJ= 125°C
VGS = 20V
VGS = –20V
VGS = 0
VDS = 25V
f = 1MHz
VGS = 10V ID= 11A
VDS = 0.5BVDSS
ID= 11A
VDS = 0.5BVDSS
VDD = 50V
ID= 11A
RG= 7.5Ω
IS= 11A TJ= 25°C
VGS = 0
IS= 11A TJ= 25°C
di/ dt≤100A/μsV
DD ≤50V
ELECTRICAL CHARACTERISTICS (TC= 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Forward Gate
– Source Leakage
Reverse Gate
– Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
100
0.1
0.19
0.22
24
325
250
100
-100
650
240
44
12.8 28.5
1.0 6.3
3.8 16.6
30
75
40
45
11
43
1.5
300
V
V/°C
Ω
V
S(Ω
μA
nA
pF
nC
nC
ns
A
V
ns
μC
BVDSS
ΔBVDSS
ΔTJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
IGSS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
IS
ISM
VSD
trr
Qrr
STATIC ELECTRICAL RATINGS
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
(Ω)
Document Number 6565
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
