1M110Z - Taiwan Semiconductor - Datasheet.Directory

CREAT BY ART

- Glass passivated chip junction

- Low profile package

- Low inductance

- Typical IR less than 5μA above 11V

- Halogen-free according to IEC 61249-2-21 definition

Molding compound, UL flammability classification rating 94V-0

Base P/N with suffix "G" on packing code - green compound (halogen-free)

Base P/N with prefix "H" on packing code - AEC-Q101 qualified

Terminal: Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 1A whisker test,

with prefix "H" on packing code meet JESD 201 class 2 whisker test

STG O

PART NO.

1N4740A

Document Number: DS_D1405012 Version: H14

Peak power dissipation at T

=50℃,

Derate above 50℃ (Note 1) P

FEATURES

- Built-in strain relief

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

MECHANICAL DATA DO-204AL (DO-41)

Case: DO-204AL (DO-41)

Weight: 0.3g (approximately)

PARAMETER SYMBOL

Note 1: Mounted on Cu-Pad size 5mm x 5mm x 1.6mm on PCB

1.0

6.67

UNIT

Storage temperature range

Watts

mW/

Peak forward surge current, 8.3ms single half

sine-wave superimposed on rated load I

FSM

PACKINGAEC-Q101

QUALIFIED

PACKING COD E GREEN COMPOUND

CODE

PACKAGE

ORDERING INFORMATION

Operating junction temperature range

DO-41 3000 / Ammo box (26mm taping)

R0 DO-41 5000 / 13" Paper reel

1000 / Bulk packing

G Green compound

Note 1: "xx" defines voltage from 10V (1N4740A) to 200V (1M200Z)

EXAMPLE

PREFERRED P/N

1N47xxA

1MxxxZ

(Note 1)

Prefix "H"

Suffix "G"

DESCRIPTION

1N4740A thru 1M200Z

Taiwan Semiconductor

Glass Passivated Junction Silicon Zener Diodes

- 55 to +150

DO-41 5000 / 13" Paper reel (Reverse)

B0 DO-41

1N4740A A0 A0

MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (T

=25℃ unless otherwise noted)

VALUE

AEC-Q101

QUALIFIED PACKING CODE GREEN COMPOUND

CODE

1N4740AHA0 H A0 AEC-Q101 qualified

1N4740A A0G A0

CREAT BY ART

mA ΩΩmA uA V mA

1N4740A 9.50 10 10.50 25.0 7 700 0.25 10 7.6 454

1N4741A 10.45 11 11.55 23.0 8 700 0.25 5 8.4 414

1N4742A 11.40 12 12.60 21.0 9 700 0.25 5 9.1 380

1N4743A 12.35 13 13.65 19.0 10 700 0.25 5 9.9 344

1N4744A 14.25 15 15.75 17.0 14 700 0.25 5 11.4 304

1N4745A 15.20 16 16.80 15.5 16 700 0.25 5 12.2 285

1N4746A 17.10 18 18.90 14.0 20 750 0.25 5 13.7 250

1N4747A 19.00 20 21.00 12.5 22 750 0.25 5 15.2 225

1N4748A 20.90 22 23.10 11.5 23 750 0.25 5 16.7 205

1N4749A 22.80 24 25.20 10.5 25 750 0.25 5 18.2 190

1N4750A 25.65 27 28.35 9.5 35 750 0.25 5 20.6 170

1N4751A 28.50 30 31.50 8.5 40 1000 0.25 5 22.8 150

1N4752A 31.35 33 34.65 7.5 45 1000 0.25 5 25.1 135

1N4753A 34.20 36 37.80 7.0 50 1000 0.25 5 27.4 125

1N4754A 37.05 39 40.95 6.5 60 1000 0.25 5 29.7 115

1N4755A 40.85 43 45.15 6.0 70 1500 0.25 5 32.7 110

1N4756A 44.65 47 49.35 5.5 80 1500 0.25 5 35.8 95

1N4757A 48.45 51 53.55 5.0 95 1500 0.25 5 38.8 90

1N4758A 53.20 56 58.80 4.5 110 2000 0.25 5 42.6 80

1N4759A 58.90 62 65.10 4.0 125 2000 0.25 5 47.1 70

1N4760A 64.60 68 71.40 3.7 150 2000 0.25 5 51.7 65

1N4761A 71.25 75 78.75 3.3 175 2000 0.25 5 56.0 60

1N4762A 77.90 82 86.10 3.0 200 3000 0.25 5 62.2 55

1N4763A 86.45 91 95.55 2.8 250 3000 0.25 5 69.2 50

1N4764A 95.00 100 105.00 2.5 350 3000 0.25 5 76.0 45

1M110Z 104.50 110 115.50 2.3 450 4000 0.25 5 83.6 -

1M120Z 114.00 120 126.00 2.0 550 4500 0.25 5 91.2 -

1M130Z 123.50 130 136.50 1.9 700 5000 0.25 5 98.8 -

1M150Z 142.50 150 157.50 1.7 1000 6000 0.25 5 114.0 -

1M160Z 152.00 160 168.00 1.6 1100 6500 0.25 5 121.6 -

1M180Z 171.00 180 189.00 1.4 1200 7000 0.25 5 136.8 -

1M200Z 190.00 200 210.00 1.2 1500 8000 0.25 5 152.0 -

Notes:

1. Tolerance and Type Number Designation. The type numbers losted have a standard tolerance on the nominal zener voltage of ±5%

2. Specials Available Include:

A. Nominal zener voltages between the voltages shown and tighter voltage tolerances

B. Matched sets

3. Zener Voltage (Vz) Measurement. Guarantees the zener voltage when messured at 90 seconds while maintaining the lead

temperature(TL) at 30℃±1℃, from the diode body

4. Zener Impedance (Zz) Derivation. The zener impedance is derives from the 60 cycle AC voltage, which results when an accurrent

having and rms value equal to 10% of the DC zener current (I

or I

) is superimposed on I

or I

5. Surge Current (I

) Non-Repetitive. The rating listd in the electrical chatacteristics table is maximum peak, non-repetitive, reverse

surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the test current, I

per

JEDEC registration; however, actual device capability is as described in Figure 11

Document Number: DS_D1405012 Version: H14

Min.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (T

=25℃ unless otherwise noted)

Device

(Note 1)

Zener Voltage

Vz@Iz

1N4740A thru 1M200Z

Taiwan Semiconductor

Zener Impedance

Nom.

(Note 2)

(Note 3)

Test

Current Leakage Current

Max.

Surge current

=25℃

Max.

CREAT BY ART

(TA=25℃ unless otherwise noted)

Document Number: DS_D1405012 Version: H14

RATINGS AND CHARACTERISTICS CURVES

1N4740A thru 1M200Z

Taiwan Semiconductor

0.25

0.5

0.75

1.25

0 25 50 75 100 125 150

PD, MAXIMUM POWER DISSIPATION

(WATTS)

AMBIENT TEMPERATURE(℃)

FIG. 1 POWER TEMPERATURE DERATING CURVE

100

1000

110100

Zz, DYNAMIC IMPEDANCE (Ω)

Iz, ZENER CURRENT(mA)

FIG.4 EFFECT OF ZENER VOLTAGE

ON ZENER IMPEDANCE

TA=25℃

Iz(rms)=0.1 Iz(dc)

f=1KHz

Iz = 1mA

5 mA

20mA

100

1000

0.4 0.5 0.6 0.7 0.8 0.9 1 1.1

IF, FORWARD CURRENT (mA)

VF, FORWARD VOLTAGE (V)

FIG. 2 TYPICAL FORWARD CHARACTERISTICS

MINIMUM

MAXIMUM

70℃

150℃

25℃

0℃

100

1000

0 1 10 100

Zz, DYNAMIC IMPEDANCE (Ω)

Iz, ZENER CURRENT (mA)

FIG.3 EFFECT OF ZENER CURRENT

ON ZENER IMPEDANCE

Iz(rms)=0.1 Iz(dc)

f=1KHz

47V

27V

0.8V

0.001

0.01

0.1

100

1000

10000

3456789101112131415

IR, LEAKAGE CURRENT(μA)

Vz, NOMINAL ZENER VOLTAGE(V)

FIG.5 TYPICAL LEAKAGE CURRENT

TYPICAL LEAKAGE CURRENT

AT 80% OF NOMINAL

BREAKDOWN VOLTAGE

125℃

25℃

CREAT BY ART

Document Number: DS_D1405012 Version: H14

1N4740A thru 1M200Z

Taiwan Semiconductor

100

1000

1 10 100

C, CAPACITANCE(pF)

Vz, FORWARD VOLTAGE (V)

FIG.6 TYPICAL CAPACITANCE versus Vz

50% OF BREAKDOWN

0V BIAS

1.0V BIAS

-4

-2

23456789101112

θVz, TEMPERATURE COEFFICIENT

(mV/℃)

Vz, ZENER VOLTAGE(V)

FIG. 7 TEMPERATURE COEFFICIENTS

a-RANGE FOR UNITS TO 12 VOLTS

RANGE Vz@ IZT

100

10 100

θVz, TEMPERATURE COEFFICIENT

(mV/℃)

Vz, ZENER VOLTAGE(V)

FIG.8 TEMPERATURE COEFFICIENTS

RANGE Vz@ IZT

b-RANGE FOR UNITS 12 TO 100 VOLTS

-4

-2

33.544.555.566.577.58

θVz, TEMPERATURE COEFFICIENT

(mV/℃)

Vz, ZENER VOLTAGE(V)

FIG. 9 EFFECT OF ZENER CURRENT

NOTE:BELOW 3 VOLTAGE ABOVE a

VOLTS CHANGES IN ZENER CURRENT

NOT AFFECT TEMPERATURE COEFFICIENTS

Vz@ IZT

0.01mA

1 mA

20mA

100

125

150

175

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

ΘJL, JUNCTION TO LEAD THERMAL

RESISTANCE(℃/W)

L, LEAD LENGTH TO HEAT SINK(INCHES)

FIG. 10 TYPICAL THERMAL RESISTANCE

versus LEAD LENGTH

CREAT BY ART

Document Number: DS_D1405012 Version: H14

1N4740A thru 1M200Z

Taiwan Semiconductor

100

0 0 1 10 100 1000

PPK, PEAK SURGE POWER WATTS

PW, PULSE WIDTH (ms)

FIG.11 MAXIMUM SURGE POWER

20% DUTY CYCLE

11V-91V NON-REPETITIVE

10% DUTY CYCLE

5% DUTY CYCLE

0.8V-10V NON-REPETITIVE

RECTANGULAR WAVEFORM

TA=25℃PRIOR TO INITIAL PULSE

CREAT BY ART

Min Max Min Max

A 2.00 2.70 0.079 0.106

B 0.71 0.86 0.028 0.034

C 25.40 - 1.000 -

D 4.20 5.20 0.165 0.205

E 25.40 - 1.000 -

P/N = Specific Device Code

G = Green Compound

YWW = Date Code

F = Factory Code

Document Number: DS_D1405012 Version: H14

MARKING DIAGRAM

DO-204AL (DO-41)

1N4740A thru 1M200Z

Taiwan Semiconductor

PACKAGE OUTLINE DIMENSIONS

DIM. Unit (mm) Unit (inch)

CREAT BY ART

assumes no responsibility or liability for any errors inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied,to

any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of

sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,

relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,

merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or seling these products for use in such applications do so at their own risk and agree to fully

indemnify TSC for any damages resulting from such improper use or sale.

Document Number: DS_D1405012 Version: H14

1N4740A thru 1M200Z

Taiwan Semiconductor

Notice

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,

Mouser Electronics

Authorized Distributor

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Taiwan Semiconductor:

1M110Z 1M120Z 1M130Z 1M150Z 1M160Z 1M180Z 1M200Z 1N4741A 1N4742A 1N4743A 1N4744A

1N4745A 1N4746A 1N4747A 1N4748A 1N4749A 1N4750A 1N4751A 1N4752A 1N4753A 1N4754A 1N4755A

1N4756A 1N4757A 1N4758A 1N4759A 1N4760A 1N4761A 1N4762A 1N4763A 1N4764A 1N4740A