RA45200
Series
Silicon
Abrupt
Junction
runing
Varactors
30
Description
Fhe
MA45200
series
of
silicon abrupt
junction
tuning
iaractors
has
been
designed to
obtain
the
highest
Q
~ossible.
Each-
device
in this
series
has
a
high
density
silicon
dioxide
passivation
which
results in
exceptionally
ow
leakage
currents
and
low
post tuning drift. These
silicon abrupt
junction
tuning
varactors,
which
have
a
high
Q,
also
exhibit
large
capacitance
changes
with
bias
oltages.
The
capacitance
change is
approximately
equal
to
the
square
root of
the voltage.
The
MA45200
series
diodes
are
available in
a
number of ceramic
packages
as
well
as
in
chip
form.
Features
U
HIGH
0
•
LOW
LEAKAGE
•
AVAILABLE
IN
CHIP
FORM
•
AVAILABLE
IN
CERAMiC
PACKAGES
•
CUSTOM
DESIGNS
AVAiLABLE
•
LOW
POST
TUNING
DRIFT
•
FREQUENCY RANGE
VHF
—
Ku-BAND
•
CAN
BE
SCREENED
TO
TX,
TXV
SPECIFICATIONS
Applications
The
MA45200
series
of
silicon tuning
diodes
is
ideally
suited
for
frequency
tuning
applications
through
Ku band.
These
devices
are
designed
for
use in
solid
state
elec-
tronic
tuning
of
transistor,
Gunn
and
IMPATT
oscillators.
u~ji
uua,q..,imunn
I
uinog
varaciors
Nominal
Characteristics
Minimum3’7
Minimume Total2,7
Capacitance
Frequency
Availablel,7
Model1
Vb
Capacitance
Ratio Minimum4
Range
Case Style
Number
(Volts) (pF)
Cto/Ctvb
“0”
(GHz)
(Chip)
MA45225
30
0.5 2.7
5500
10-12
132
MA45226
30
0.6 2.9
5500
9-11
132
MA45227
30
0.8
2.9
5000
8-10
132
MA45228
30
1.0
3.0
4800
7-9
132
MA45229
30
1.2
3.2
4800
6-8
132
MA45230
30
1.5
3.3
4500
6-8
132
MA45231 30
1.8 3.5
4000
5-7
132
MA45232
30
2.2 3.6
4000
5-7
132
MA45233
30
2.7 3.7
4000
4-6
132
MA45234
30
3.3
3.7
3500
4-6
132
MA45235
30
3.9
3.8
3500
3-5
132
MA45236
30
4.7
3.8
3000
2-4
132
MA45237
30
5.6
3.9
3000
2-4
132
MA45238
30
6.8
3.9
3000
2-4
132
MA45239
30
8.2 3.9
2700
1-2
132
MA45240
30
10.0
4.0
2500
1-2
132
MA45241
30
12.0
4.0
2200
.5-1.0
132
MA45242
30
15.0
4.0
2000
.5-1.0
132
45
Volt
Silicon
Abrupt
Junction Tuning
Varactors
Nominal
Characteristics
Minimum3’7
Minimumo
Total2,?
Capacitance
Frequency
Available1’7
Modell
Vb
Capacitance
Ratio Minimum4
Range
Case Style
Number
(Volts) (pF)
Cto/Ctvb
“0”
(GHz) (Chip)
MA45245
45
0.5
3.3
4000
9-11
132
MA45246
45
0.6 3.7
4000
8-10
132
MA45247
45
0.8
3.9
3800
5-7
132
MA45248
45
1.0
4.0
3500
5-7
132
MA45249
45
1.2
4.2
3500
4-6
132
MA45250
45
1.5
4.4
3300
4-6
132
MA45251 45
1.8
4.6
3000
3-5
132
MA45252
45
2.2
4.8
2700
3-5
132
MA45253
45
2.7
5.5
2700
2-3
132
MA45254
45
3.3
5.2
2400
2-3
132
MA45255
45
3.9
5.3
2200
1.5-2.5
132
MA45256
45
4.7
5.4
2000
1.0-1.5
132
MA45257
45
5.6
5.4
2000
1.0-1.5 132
MA45258
45
6.8
5.4
1800
1.0-1.5
132
MA45259
45
8.2
5.4
1700
1.0-1.5
132
NOTES
1.
case
style
30
is the
standard
enclosure
for
this
series.
On
special
order,
4.
Diode
0
at
—4
volts is
determined
at
1.0
GHz
and
extrapolated
to
50
MHz
these
devices
are
also
available
in
other
case
styles
including
31,
94,
96,
by:
1
108,
and
in
chip
form.
To
order
the
MA45200
series
in
chip
form
or
other
04
=
2nf
CJ..4
R5
case
styles,
add
the
designated available case
number
as
a
suffix to
the
model number,
i.e.,
MA45229-132
is
a
chip
or
MA45229-96
is
in
the
96
case
style.
5.
Reverse
leakage
current
is
measured
at
800/0
of
the
minimum breakdown
2.
Total
capacitance
is
measured
at
1
MHz
and
—4
volts.
The
standard
voltage and
will
be
20
nanoamperes maximum.
capacitance
is
±
10%.
A
tighter
tolerance
±5%
may
be obtained,
at
an
6.
Reverse
leakage
is
10
microamperes
maximum at minimum breakdown
additional
cost,
by
adding
the
suffix
‘A’
to
the
basic
model number. voltage.
3.
The
total
capacitance
ratio
will
vary
with
different
packages
due to
dif- 7.
The
total
capacitance
and
capacitance
ratios
shown
are
for
diodes
housed
ferences
in
package
parasitic
capacitance.
in
case
style
30.
Other cases and
chip
styles
will
result
in
slightly
different
values.
M/A-COM,
Inc.
U43 South
Aye,
Burlington,
MA
01803
U
800-366-2266
144
Specifications
@
TA
=
250C
(Cont’d)
60
Volt
Silicon
Abrupt
Junction Tuning Varactors
MA45200
Series
—
SiliconAbrupt
Junction
TuningVaractors
Nominal Characteristics
Minimum3’7
Minimum6
Total2’7
Capacitance
Model’
Vb
Capacitance
Ratio
Number (Volts)
(pF)
Cto/Ctvb
Minimum4
“a”
Frequency
Available”7
Range
Case
Style
(GHz)
(Chip)
MA45260
60
0.6 4.5
MA45261
60
0.8 4.5
MA45262
60
1.0
4.8
MA45263
60
1.2
5.2
MA45264
60
1.5
5.6
2500
2300
2200
2000
1800
4-6
132
4-6
132
4-6
132
2-4
132
2-4
132
MA45265
60
1.8
5.9
MA45266
60
2.2 6.0
MA45267
60
2.7
6.2
MA45268
60
3.3
6.3
MA45269
60
3.9
6.4
1800
1700
1700
1600
1500
2-4
132
1.5-2.0 132
1.5-3.0
132
1.5-3.0
132
1.0-2.0
132
MA45270
60
4.7
6.5
MA45271
60
5.6
6.5
MA45272
60
6.8
6.5
MA45273
60
8.2
6.8
MA45274
60
10.0
7.0
1400
1400
1200
1200
1000
1.0-2.0 132
1.0-2.0
132
0.5-1.0
132
0.5-1.0
132
0.5-1.0
132
MA45275
60
12.0
7.0
MA45276
60
15.0
7.2
MA45277
60
18.0
7.2
MA45278
60
22.0
7.4
MA45279
60
27.0
7.4
MA45280
60
33.0
7.4
1000
900
900
800
800
700
0.5-1.0
131
0.25-0.50
131
0.25-0.50
131
0.25-0.50
131
0.10-0.25
131
0.10-0.25
131
90
Volt
Silicon
Abrupt
Junction
Tuning Varactors Nominal Characteristics
Minimum3’7
Minimum6
Total2’7
Capacitance
Modell
Vb Capacitance Ratio
Number
(Volts)
(pF)
Cto/CtVb
Minimum4
“Q”
Frequency Available”7
Range
Case
Style
(GI-lz)
(Chip)
MA45290
90
1.0 6.0
MA45291
90
1.2 6.5
MA45292
90
1.5 7.0
1500
1200
1100
2.0-4.0
132
2.0-4.0
132
2.0-4.0 132
MA45293
90
1.8 7.3
1000
2.0-4.0
132
MA45294
90
2.2
7.5
900 1.5-3.0 132
MA45295
90
2.7
7.8
900 1.5-3.0 132
MA45296
90
3.3 8.0
800 1.0-2.0 132
MA45297
90
3.9
8.3
800 1.0-2.0 132
MA45298
90
4.7 8.5
700 1.0-2.0 132
MA45299
90
5.6 8.8
600
0.5-1.0
132
See
notes
on
previous
page.
MAXIMUM
RATINGS
ENVIRONMENTAL PERFORMANCE
Reverse
Voltage
Operating
Temperature
Storage
Temperature
Temperature
Coefficient
Power
Dissipation
Storage
Temperature
(derate
linearly
to
zero at
1
500C)
Same
as
rated
breakdown
Vb
~650C
to
+
15000
~650C
to
+
20000
300
ppm/00
at
+
-
4 Volts
~650C
to
+
20000
<1.0
pF
©
100mW
1.0
pF
©
200mW
All
tuning
varactors
in
the MA45200
series
are capable
of
meeting the
performance
tests
dictated
by
the
methods
and
procedures
of
the latest
revisions
of
MIL-S-19500,
MIL-STD-202
and
MIL-STD-750
which
specify
mechanical,
electrical, thermal
and
other environmental
tests
common
to
semiconductor
products.
HIGH
RELIABILITY
PARTS
All
diodes
in
the
MA45200
series
may
be
screened
to
TX,
TXV
specification.
31
108
M/A-COM,
Inc.
146
U
94
43
South
Aye,
Burlington,
MA
01803
96
132
U
30
131
800-366-2266
MA45200
Series
—
Silicon Abrupt
Junction
Tuning
Varactors
Typical
Performance
Curves
I
11111
I
11111
1/N
~ .47
10
——~1—
9
8
7
6
z
u.
x
u.
1
100
5
4
—
..—~—
—
—
FMAX
cMAX
FMIN
CMIN
-1—I—I-—H—
-
THIS
CURVE
DOES
NOT
TAKE
SPECIFIC
CIRCUIT
CONSIDERATIONS
INTO
-
ACCOUNT
AND
THUS REFLECTS
ONLY
POTENTIAL
DEVICE
PERFORMANCE
REVERSE BIAS
VOLTAGE
(VOLTS)
FIGURE
1.
Typical
Capacitance Change
Ratios
for
Silicon
Tuning
Varactor
Chips
CMAX/CMIN
FIGURE
2.
Frequency
Tuning
Ratio
as
a
Function
of
Capacitance Change Ratio
C.,
0.
0~
0
2
4 6 8 10 12 14 16
REVERSE
VOLTAGE
(VOLTS)
FIGURE
3.
Typical
Temperature
Coefficient
of
Silicon
Varactors
I
-
U
0
I
-
U
I—
U
0
I
-
U
ii~
I I
9
Cp.15PF —
—
8 =
0.7
VOLTS
1/N=
46
6
—h—h-I-h
2
5
UNPACKAGFr
IP
4———
——
——
CT.4
=
1.OpF
2—
—
=
0.5
pF
1—--
1
10 100
1
10 100
REVERSE
BIAS
VOLTAGE
(VOLTS)
REVERSE
BIAS
VOLTAGE
(VOLTS)
FIGURE
4.
Typical
Capacitance
Change
Ratios
for
Silicon
FIGURE
5.
Typical
Capacitance Change
Ratios
for
Silicon
Tuning Varactors
in Case
Styles
30,
31
&
108
Tuning Varactors
in Case
Styles
94
and
96
10
9
8
7
6
5
4
3
2
U
0
U
2
1
2 3
45678910
10,000
