RA45200 Series Silicon Abrupt Junction runing Varactors Features 30 Description Fhe MA45200 series of silicon abrupt junction tuning iaractors has been designed to obtain the highest Q ~ossible.Each- device in this series has a high density silicon dioxide passivation which results in exceptionally ow leakage currents and low post tuning drift. These silicon abrupt junction tuning varactors, which have a high Q, also exhibit large capacitance changes with bias oltages. The capacitance change is approximately equal to the square root of the voltage. The MA45200 series diodes are available in a number of ceramic packages as well as in chip form. U * * * * * * HIGH 0 LOW LEAKAGE AVAILABLE IN CHIP FORM AVAILABLE IN CERAMiC PACKAGES CUSTOM DESIGNS AVAiLABLE LOW POST TUNING DRIFT FREQUENCY RANGE VHF Ku-BAND * CAN BE SCREENED TO TX, TXV SPECIFICATIONS -- Applications The MA45200 series of silicon tuning diodes is ideally suited for frequency tuning applications through Ku band. These devices are designed for use in solid state electronic tuning of transistor, Gunn and IMPATT oscillators. u~ji uua,q..,imunn I uinog varaciors Nominal Characteristics Model1 Number Minimume Vb (Volts) Total2,7 Capacitance (pF) Minimum3'7 Capacitance Ratio Cto/Ctvb Minimum4 "0" Frequency Range (GHz) Availablel,7 Case Style (Chip) MA45225 MA45226 MA45227 MA45228 MA45229 MA45230 MA45231 MA45232 MA45233 MA45234 MA45235 MA45236 MA45237 MA45238 MA45239 MA45240 MA45241 MA45242 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 0.5 0.6 0.8 1.0 1.2 1.5 1.8 2.2 2.7 3.3 3.9 4.7 5.6 6.8 8.2 10.0 12.0 15.0 2.7 2.9 2.9 3.0 3.2 3.3 3.5 3.6 3.7 3.7 3.8 3.8 3.9 3.9 3.9 4.0 4.0 4.0 5500 5500 5000 4800 4800 4500 4000 4000 4000 3500 3500 3000 3000 3000 2700 2500 2200 2000 10-12 9-11 8-10 7-9 6-8 6-8 5-7 5-7 4-6 4-6 3-5 2-4 2-4 2-4 1-2 1-2 .5-1.0 .5-1.0 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 45 Volt Silicon Abrupt Junction Tuning Varactors Nominal Characteristics Modell Number Minimumo Vb (Volts) Total2,? Capacitance (pF) Minimum3'7 Capacitance Ratio Cto/Ctvb Minimum4 "0" MA45245 45 0.5 3.3 4000 9-11 132 MA45246 MA45247 MA45248 MA45249 45 45 45 45 0.6 0.8 1.0 1.2 3.7 3.9 4.0 4.2 4000 3800 3500 3500 8-10 5-7 5-7 4-6 132 132 132 132 MA45250 45 1.5 4.4 3300 4-6 132 MA45251 45 1.8 4.6 3000 3-5 132 MA45252 MA45253 45 45 2.2 2.7 4.8 5.5 2700 2700 3-5 2-3 132 132 MA45254 45 3.3 5.2 2400 2-3 132 MA45255 MA45256 MA45257 45 45 45 3.9 4.7 5.6 5.3 5.4 5.4 2200 2000 2000 1.5-2.5 1.0-1.5 1.0-1.5 132 132 132 MA45258 MA45259 45 45 6.8 8.2 5.4 5.4 1800 1700 1.0-1.5 1.0-1.5 132 132 NOTES 1. case style 30 is the standard enclosure for this series. On special order, these devices are also available in other case styles including 31, 94, 96, 108, and in chip form. To order the MA45200 series in chip form or other case styles, add the designated available case number as a suffix to the model number, i.e., MA45229-132 is a chip or MA45229-96 is in the 96 case style. 2. Total capacitance is measured at 1 MHz and --4 volts. The standard capacitance is 10%. A tighter tolerance 5%may be obtained, at an additional cost, by adding the suffix `A' to the basic model number. 3. The total capacitance ratio will vary with different packages due to differences in package parasitic capacitance. M/A-COM, Inc. 144 U Frequency Range (GHz) Available1'7 Case Style (Chip) 4. Diode 0 at --4 volts is determined at 1.0 GHz and extrapolated to 50 MHz by: 1 04 = 2nf CJ..4 R 5 5. Reverse leakage current is measured at 800/0 of the minimum breakdown voltage and will be 20 nanoamperes maximum. 6. Reverse leakage is 10 microamperes maximum at minimum breakdown voltage. 7. The total capacitance and capacitance ratios shown are for diodes housed in case style 30. Other cases and chip styles will result in slightly different values. 43 South Aye, Burlington, MA 01803 U 800-366-2266 MA45200 Series Specifications @ TA -- Silicon Abrupt Junction Tuning Varactors 250C (Cont'd) = 60 Volt Silicon Abrupt Junction Tuning Varactors Nominal Characteristics Model' Number Minimum6 Vb (Volts) Total2'7 Capacitance (pF) Minimum3'7 Capacitance Ratio Cto/Ctvb Minimum4 "a" Frequency Range (GHz) Available"7 Case Style (Chip) MA45260 MA45261 MA45262 MA45263 MA45264 MA45265 MA45266 MA45267 MA45268 MA45269 MA45270 MA45271 MA45272 MA45273 MA45274 MA45275 MA45276 MA45277 MA45278 MA45279 MA45280 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 0.6 0.8 1.0 1.2 1.5 1.8 2.2 2.7 3.3 3.9 4.7 5.6 6.8 8.2 10.0 12.0 15.0 18.0 22.0 27.0 33.0 4.5 4.5 4.8 5.2 5.6 5.9 6.0 6.2 6.3 6.4 6.5 6.5 6.5 6.8 7.0 7.0 7.2 7.2 7.4 7.4 7.4 2500 2300 2200 2000 1800 1800 1700 1700 1600 1500 1400 1400 1200 1200 1000 1000 900 900 800 800 700 4-6 4-6 4-6 2-4 2-4 2-4 1.5-2.0 1.5-3.0 1.5-3.0 1.0-2.0 1.0-2.0 1.0-2.0 0.5-1.0 0.5-1.0 0.5-1.0 0.5-1.0 0.25-0.50 0.25-0.50 0.25-0.50 0.10-0.25 0.10-0.25 132 132 132 132 132 132 132 132 132 132 132 132 132 132 132 131 131 131 131 131 131 90 Volt Silicon Abrupt Junction Tuning Varactors Modell Number Minimum6 Vb (Volts) Total2'7 Capacitance (pF) Minimum3'7 Capacitance Ratio Cto/CtVb MA45290 MA45291 MA45292 MA45293 MA45294 MA45295 MA45296 MA45297 MA45298 MA45299 90 90 90 90 90 90 90 90 90 90 1.0 1.2 1.5 1.8 2.2 2.7 3.3 3.9 4.7 5.6 6.0 6.5 7.0 7.3 7.5 7.8 8.0 8.3 8.5 8.8 Nominal Characteristics Minimum4 "Q" Frequency Range (GI-lz) Available"7 Case Style (Chip) 1500 1200 1100 2.0-4.0 2.0-4.0 2.0-4.0 132 132 132 1000 2.0-4.0 132 900 900 800 800 700 600 1.5-3.0 1.5-3.0 1.0-2.0 1.0-2.0 1.0-2.0 0.5-1.0 132 132 132 132 132 132 See notes on previous page. ENVIRONMENTAL PERFORMANCE MAXIMUM RATINGS Reverse Voltage Operating Temperature Storage Temperature Temperature Coefficient Power Dissipation Storage Temperature (derate linearly to zero at 1 500C) Same as rated breakdown Vb ~650C to + 15000 ~650C to + 20000 300 ppm/00 at + 4 Volts ~650C to + 20000 <1.0 pF (c) 100mW 1.0 pF (c) 200mW - HIGH RELIABILITY PARTS All diodes in the MA45200 series may be screened to TX, TXV specification. All tuning varactors in the MA45200 series are capable of meeting the performance tests dictated by the methods and procedures of the latest revisions of MIL-S-19500, MIL-STD-202 and MIL-STD-750 which specify mechanical, electrical, thermal and other environmental tests common to semiconductor products. 30 108 M/A-COM, Inc. 146 31 94 96 131 U 43 South Aye, Burlington, MA 01803 132 U 800-366-2266 MA45200 Series -- Silicon Abrupt Junction Tuning Varactors Typical Performance Curves I 11111 10 9 8 7 1/N ~ .47 6 U 0 U -- 9 8 7 6 I 11111 5 z 4 u. x ----~1-- 3 -- 5 - 4 - FMAX cMAX FMIN CMIN ..--~-- -- -1--I--I---H-- THIS CURVE DOES NOT TAKE SPECIFIC CIRCUIT CONSIDERATIONS INTO ACCOUNT AND THUS REFLECTS ONLY POTENTIAL DEVICE PERFORMANCE u. 2 2 1 100 10 1 2 3 45678910 CMAX/CMIN REVERSE BIAS VOLTAGE (VOLTS) FIGURE 1. Typical Capacitance Change Ratios for Silicon Tuning Varactor Chips FIGURE 2. Frequency Tuning Ratio as a Function of Capacitance Change Ratio 10,000 C., 0. 0~ 0 2 4 6 8 10 12 14 REVERSE VOLTAGE (VOLTS) 16 FIGURE 3. Typical Temperature Coefficient of Silicon Varactors ii~ I 9 8 1/N= I-- U 0 I- 0 IU -- 46 --h--h-I-h 5 I- -- = 0.7 VOLTS 6 U I Cp.15PF 2 UNPACKAGFr 4------ IP ---- ---- U CT. 4 = 1.OpF 2-- -- = 0.5 pF 1---- 1 10 REVERSE BIAS VOLTAGE (VOLTS) 100 FIGURE 4. Typical Capacitance Change Ratios for Silicon Tuning Varactors in Case Styles 30, 31 & 108 1 10 REVERSE BIAS VOLTAGE (VOLTS) 100 FIGURE 5. Typical Capacitance Change Ratios for Silicon Tuning Varactors in Case Styles 94 and 96