BFX34
HIGH CURRENT GENERAL
PURPOSE TRANSIST OR
FEATURES
• SILICON EPITAXIAL NPN TRANSISTOR
• HIGH SPEED, LOW SATURATION SWITCH
• CECC SCREENING OPTIONS
DESCRIPTION:
The BFX34 is a silicon Epitaxial Planar NPN
transistor in a TO-39 case, intended for high
current applications.
Very low saturation voltage and high speed
at high current levels make it ideal for power
drivers, power amplifiers, switching power
supplies and relay drive inverters.
120V
60V
6V
2A
5A
1A
0.87W
5W
–65 to +200°C
200°C
MECHANICAL DATA
Dimensions in mm (inches)
TO39 (TO-205AD) Package
ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise stated)
PIN1 – EMITTER Underside View
PIN 2 – BASE PIN 3 – COLLECTOR
0.89
(0.035)max.
12.70
(0.500)
min. 0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
123
0.74 (0.029)
1.14 (0.045)
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5569
Issue 1
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
VCBO Collector – Base Voltage (IE= 0)
VCEO Collector – Emitter Voltage (IB= 0)
VEBO Emitter – Base Voltage (IC= 0)
ICContinious Collector Current
ICM Peak Repetitive Collector Current
IBContinious Base Current
Ptot Total Device Dissipation @ TA ≤25°C
@ TC≤25°C
TSTG Storage Temperature Range
TJJunction Temperature
Parameter Test Conditions Min. Typ. Max. Unit
µA
V
−
MHz
pF
µs
0.02 10
0.05 10
120
60
60.4 1
1.3 1.6
100
75
40 80 150
70 100
300 500
40 100
0.6
1.2
VCE = 60V VBE = 0
VEB = 4V IC= 0
IC= 5mA IE= 0
IC= 100mA IB= 0
IE= 1mA IC= 0
IC= 5A IB= 0.5A
IC= 5A IB= 0.5A
IC= 1A VCE = 2V
IC= 1.5A VCE = 0.6V
IC= 2A VCE = 2V
IC= 0.5A VCE = 5V
f = 20MHz
IC= 0 VEB = 0.5V
f = 1MHz
VCB = 10V IE= 0
f = 1MHz
VCC = 20V IC= 0.5A
IB1 = – IB2= 0.5A
BFX34
ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise stated)
ICES Collector Cut-off Current
IEBO Emitter Cut-off Current
V(BR)CBO* Collector – Base Breakdown Voltage
VCEO(sus)* Collector – Emitter Sustaining Voltage
VEBO* Emitter– Base Voltage
VCE(sat)* Collector – Emitter Saturation Voltage
VBE(sat)* Base – Emitter Saturation Voltage
hFE* DC Current Gain
fT*Transition Frequency
CEBO Emitter – Base Capacitance
CCBO Collector – Base Capacitance
ton Turn on Time
toff Turn off Time
* Pulse Duration =300µs,duty cycle ≤2%.
THERMAL CHARACTERISTICS
RθJC Thermal Resistance Junction – Case 35 °C/W
RθJA Thermal Resistance Junction – Ambient 200 °C/W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 5569
Issue 1
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
