PTF240101SV1 - Infineon Technologies

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 12 Rev. 05, 2007-04-12

Three-Carrier CDMA2000 Performance

VDD = 28 V, IDQ = 180 mA, ƒ = 2680 MHz

28 30 32 34 36 38 40 42

Output Power (dBm), PEP

Drain Efficiency (%)

-70

-65

-60

-55

-50

-45

-40

-35

-30

Adj. Ch. Power Ratio (dBc)

ACP Low

ACP Up

ALT Up

Efficiency

PTF240101S

Package H-32259-2

RF Characteristics, CDMA2000 Operation

CDMA2000 Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)

VDD = 28 V, IDQ = 180 mA, POUT = 2 W, ƒ = 2680 MHz

Characteristic Symbol Min Typ Max Unit

Adjacent Channel Power Ratio ACPR —–55 —dBc

Gain Gps —16 —dB

Two-tone Measurements (tested in Infineon test fixture)

VDD = 28 V, IDQ = 180 mA, POUT = 10 W PEP, ƒ = 2680 MHz, tone spacing = 1 MHz

Characteristic Symbol Min Typ Max Unit

Gain Gps 15.5 16 —dB

Intermodulation Distortion IMD —–31 –28 dBc

Thermally-Enhanced High Power RF LDMOS FET

10 W, 2400 – 2700 MHz

Description

The PTF240101S is a 10-watt, internally-matched GOLDMOS® FET device

intended for CDMA2000 and WiMAX applications in the 2.4 to 2.7 GHz

band. Full gold metallization ensures excellent device lifetime and reliability.

Features

•Pb-free and RoHS-compliant

•Typical CDMA2000 performance

- Average output power = 2.0 W

- Gain = 16 dB

- Efficiency = 18%

- ACPR = –55 dBc

•Typical CW performance

- Output power at P–1dB = 15 W

- Efficiency = 45%

•Integrated ESD protection: Human Body

Model Class 1 (minimum)

•Excellent thermal stability

•Low HCI drift

•Capable of handling 10:1 VSWR @ 28 V,

10 W (CW) output power

PTF240101S

Data Sheet 2 of 12 Rev. 05, 2007-04-12

RF Characteristics (cont.)

Two-tone Measurements (tested in Infineon test fixture) (cont.)

VDD = 28 V, IDQ = 160 mA, ƒ = 2680 MHz, tone spacing = 7 MHz

Characteristic Symbol Min Typ Max Unit

Gain Gps 14 15 —dB

Efficiency at 1 W avg. ηD910 —%

Intermodulation Distortion at 1 W avg. IMD —–42 –40 dBc

Compression at 10 W avg. Pcomp —0.3 1.0 dB

Input Return Loss at 2.4 GHz IRL –10 –12 —dB

DC Characteristics

Characteristic Conditions Symbol Min Typ Max Unit

Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V

Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA

On-State Resistance VGS = 10 V, VDS = 0.1 A RDS(on) —0.83 —Ω

Operating Gate Voltage VDS = 28 V, IDQ = 180 mA VGS 2.5 3.2 4.0 V

Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA

Maximum Ratings

Parameter Symbol Value Unit

Drain-Source Voltage VDSS 65 V

Gate-Source Voltage VGS –0.5 to +12 V

Junction Temperature TJ200 °C

Total Device Dissipation PD58 W

Above 25°C derate by 0.333 W/°C

Storage Temperature Range TSTG –40 to +150 °C

Thermal Resistance (TCASE = 70°C, 10 W CW) RθJC 3.0 °C/W

Ordering Information

Type Package Outline Package Description Marking

PTF240101S H-32259-2 Thermally-enhanced, surface mount PTF240101S

PTF240101S

Data Sheet 3 of 12 Rev. 05, 2007-04-12

Gain & Efficiency vs. Output Power

VDD = 28 V, IDQ = 180 mA, ƒ = 2680 MHz

28 33 38 43

Output Power (dBm)

Gain (dB)

Drain Efficiency (%)

Efficiency

Gain

Broadband Performance

VDD = 28 V, IDQ = 180 mA, POUT = 10 W

2600 2620 2640 2660 2680 2700

Frequency (MHz)

Gain (dB), Efficiency (%)

-25

-20

-15

-10

-5

Return Loss (dB)

Gain

Return Loss

Efficiency

Typical Performance, CDMA2000 Operation (measurements taken in broadband test fixture)

Gain vs. Output Power

VDD = 28 V, ƒ = 2680 MHz

14.5

15.0

15.5

16.0

16.5

17.0

17.5

18.0

26 29 32 35 38 41 44

Output Power (dBm)

Power Gain (dB)

IDQ = 180 mA

IDQ = 220 mA

IDQ = 100 mA

IS-95 CDMA Performance

VDD = 28 V, IDQ = 180 mA, ƒ = 2680 MHz

29 31 33 35 37 39 41

Output Power (dBm), Avg.

Drain Efficiency (%)

-70

-65

-60

-55

-50

-45

-40

-35

-30

Adj. Ch. Power Ratio (dBc)

Efficiency

Adj

Alt–1

PTF240101S

Data Sheet 4 of 12 Rev. 05, 2007-04-12

0.1

0.2

0.1

0.3

2700 MHz

2400 MHz

Z Load

Z Source

2700 MHz

Z Source Z Load

Z0 = 50 Ω

Frequency Z Source ΩZ Load Ω

MHz RjX RjX

2400 3.8 –13.5 4.7 –3.6

2450 3.4 –12.7 4.3 –3.3

2500 3.1 –10.5 4.0 –2.8

2550 3.3 –10.0 3.6 –2.4

2600 2.6 –8.3 3.4 –1.9

2650 2.9 –7.4 3.2 –1.4

2700 2.5 –6.0 3.1 –1.0

Typical Performance (cont.)

Gate-Source Voltage vs. Temperature

Voltage normalized to typical gate voltage,

series show current.

0.96

0.97

0.98

0.99

1.00

1.01

1.02

1.03

1.04

-20 020 40 60 80 100

Case Temperature (ºC)

Normalized Bias Voltage

0.05

0.28

0.51

0.74

0.97

1.2

Intermodulation Distortion vs. Output Power

VDD = 28 V, IDQ = 180 mA, ƒ1 = 2679 MHz, ƒ2 = 2680 MHz

-80

-70

-60

-50

-40

-30

-20

33 35 37 39 41 43

Output Power, PEP (dBm)

IMD (dBc)

3rd Order

7th Order

5th Order

Broadband Circuit Impedance Data

PTF240101S

Data Sheet 5 of 12 Rev. 05, 2007-04-12Data Sheet 5 of 12 Rev. 05, 2007-04-12

CDMA2000 Reference Circuit

Reference Circuit Schematic for ƒ = 2650 MHz

240101s_sch

2K VR4

2K V

0.001µF

BCP56

1.3KVR1

1.2KV

LM7805

0.001µF

VDD

QQ1

10V

4.7pF

10pF

0.5pF

1.4pF

l1l2

4.7pF

C10

C11

0.6pF

5.1K

10 µF

35V

0.1µF

5.1K V

DUT

l8l6

l9l11

4.7pF

0.4pF

0.5pF

C15

C14

l12

C16

l13

4.7pF

C12

10V

l10

C13

100µF

50V

VDD

RF_IN RF_OUT

Circuit Assembly Information

DUT PTF240101S LDMOS Transistor

Circuit Board 0.76 mm [0.030"] thick, εr = 4.5 Rogers TMM4, 2 oz. Copper

Microstrip Electrical Characteristics at 2650 MHz Dimensions: L x W (mm) Dimensions: L x W (in.)

l10.043 λ, 50.0 Ω2.67 x 1.35 0.105 x 0.053

l20.119 λ, 50.0 Ω7.37 x 1.35 0.290 x 0.053

l30.173 λ, 50.0 Ω10.67 x 1.35 0.420 x 0.053

l40.114 λ, 50.0 Ω7.06 x 1.35 0.278 x 0.053

l50.030 λ, 50.0 Ω1.83 x 1.35 0.072 x 0.053

l60.019 λ, 13.3 Ω1.09 x 8.81 0.043 x 0.347

l70.278 λ, 75.0 Ω17.60 x 0.69 0.693 x 0.027

l80.038 λ, 13.3 Ω2.18 x 8.81 0.086 x 0.347

l90.027 λ, 13.3 Ω1.52 x 8.81 0.060 x 0.347

l10 0.327 λ, 75.0 Ω20.73 x 0.69 0.816 x 0.027

l11 0.086 λ, 13.3 Ω4.83 x 8.81 0.190 x 0.347

l12 0.177 λ, 50.0 Ω10.92 x 1.35 0.430 x 0.053

l13 0.217 λ, 50.0 Ω13.41 x 1.35 0.528 x 0.053

PTF240101S

Data Sheet 6 of 12 Rev. 05, 2007-04-12Data Sheet 6 of 12 Rev. 05, 2007-04-12

240101s_assy

RF_IN RF_OUT

35V

VDD

Component Description Suggested Manufacturer P/N or Comment

C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND

C4 Tantalum capacitor, 10 µF, 35 V Digi-Key PCS6106TR-ND

C5 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND

C6 Ceramic capacitor, 10 pF ATC 100B 100

C7, C10, C12, C16 Ceramic capacitor, 4.7 pF ATC 100B 4R7

C8 Ceramic capacitor, 1.4 pF ATC 100B 1R4

C9, C14 Ceramic capacitor, 0.5 pF ATC 100B 0R5

C11 Ceramic capacitor, 0.6 pF ATC 100A 0R6

C13 Tantalum capacitor, 100 µF, 50 V Digi-Key P5571-ND

C15 Ceramic capacitor, 0.4 pF ATC 100B 0R4

Q1 Transistor Infineon BCP56

QQ1 Voltage Regulator National Semiconductor LM7805

R1 Chip resistor, 1.2 k-ohms Digi-Key P1.2KGCT-ND

R2 Chip resistor, 1.3 k-ohms Digi-Key P1.3KGCT-ND

R3 Chip resistor, 2 k-ohms Digi-Key P2KECT-ND

R4 Potentiometer, 2 k-ohms Digi-Key 3224W-202ETR-ND

R5, R8 Chip resistor, 10 ohms Digi-Key P10ECT-ND

R6, R7 Chip resistor, 5.1 k-ohms Digi-Key P5.1KECT-ND

CDMA2000 Reference Circuit (cont.)

Reference circuit assembly diagram (not to scale)*

*Gerber files for this circuit are available upon request.

PTF240101S

Data Sheet 7 of 12 Rev. 05, 2007-04-12Data Sheet 7 of 12 Rev. 05, 2007-04-12

RF Characteristics, WiMAX Operation

WiMAX Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)

VDD = 28 V, IDQ = 160 mA, POUT = 1 W, ƒ = 2400 MHz, 3.5 MHz bandwidth, 4 MHz sampling rate, 64 QAM 2/3

Characteristic Symbol Min Typ Max Unit

Error Vector Magnitude EVM —–41 —dBc

Gain Gps —15.5 —dB

Two-tone Measurements (tested in Infineon test fixture)

VDD = 28 V, IDQ = 160 mA, POUT = 1 W avg., ƒ = 2300, 2400, 2500 MHz, tone spacing = 7 MHz

Characteristic Symbol Min Typ Max Unit

Gain Gps 14.0 15.5 —dB

Intermodulation Distortion IMD —–43 –40 dBc

Drain Efficiency ηD910 —%

Input Return Loss at 2.4 GHz IRL —–14 –10 dB

Typical WiMAX Performance (measurements taken in broadband test fixture)

WiMAX Performance

VDD = 28 V, IDQ = 160 mA,

(modulation = 64 QAM2/3, channel bandwidth = 3.5

MHz, sample rate = 4 MHz)

-43

-40

-37

-34

-31

-28

-25

20 22 24 26 28 30

Output Power (dBm)

Error Vector Magnitude (dBc)

2.3Ghz

2.4Ghz

2.5Ghz

WiMAX Performance

VDD = 28 V, IDQ = 160 mA, ƒ = 2400 MHz,

(modulation = 64 QAM2/3, channel bandwidth = 3.5 MHz,

sample rate = 4 MHz)

-50

-45

-40

-35

-30

-25

20 22 24 26 28 30

Output Power (dBm)

EVM (dB)

t = +85 °C

t = +25 °C

t = –33 °C

PTF240101S

Data Sheet 8 of 12 Rev. 05, 2007-04-12

Typical WiMAX Performance (cont.)

See next page for WiMAX circuit information

Gain vs. Output Power

VDD = 24 V, ƒ = 2400 MHz

13.5

14.0

14.5

15.0

15.5

16.0

16.5

25 30 35 40 45

Output Power (dBm)

Power Gain (dB)

IDQ = 160 mA

IDQ = 140 mA

IDQ = 230 mA

Two-tone Broadband Performance

VDD = 28 V, IDQ = 160 mA, POUT = 1 W avg.

(application circuit ACW1 covers 2.3 – 2.5 GHz)

2300 2350 2400 2450 2500

Frequency (MHz)

Gain (dB), Efficiency (%)

-50

-40

-30

-20

-10

Input Return Loss (dB)

Gain

Efficiency

Return Loss

IMD

PTF240101S

Data Sheet 9 of 12 Rev. 05, 2007-04-12Data Sheet 9 of 12 Rev. 05, 2007-04-12

Circuit Assembly Information

DUT PTF240101S LDMOS Transistor

Circuit Board 0.76 mm [0.030"] thick, εr = 4.5 Rogers TMM4, 2 oz. Copper

Microstrip Electrical Characteristics at 2500 MHz1Dimensions: L x W (mm) Dimensions: L x W (in.)

l10.036 λ, 50.0 Ω5.28 x 1.37 0.208 x 0.054

l20.081 λ, 50.0 Ω13.69 x 1.37 0.539 x 0.054

l30.105 λ, 38.0 Ω6.71 x 2.16 0.264 x 0.085

l40.051 λ, 8.8 Ω3.00 x 13.64 0.118 x 0.537

l50.035 λ, 8.8 Ω2.03 x 13.64 0.080 x 0.537

l60.278 λ, 75.0 Ω17.60 x 0.69 0.693 x 0.027

l70.025 λ, 12.9 Ω1.50 x 8.89 0.059 x 0.350

l80.147 λ, 12.9 Ω8.71 x 8.89 0.343 x 0.350

l90.323 λ, 68.0 Ω21.59 x 0.76 0.850 x 0.030

l10 0.133 λ, 33.0 Ω8.38 x 2.74 0.330 x 0.108

l11 0.183 λ, 50.0 Ω11.91 x 1.37 0.469 x 0.054

1 Electrical Characteristics are rounded

RF_IN RF_OUT

240101s_wimax_bd

2kV

0.001µF

BCP56

1.3kV

1.2kV

LM7805

0.001µF

VDD

QQ1

2kV

6.8pF

8.2pF

VDD

l8l9l11

DUT

C10 C12

C13

100µF

50V

1µF

0.6pF

l1l2

6.8pF

l3l4

5.1kV

10 µF

35V

0.1µF

8.2pF

1µF

C11

l10l6

5.1kV

10V

WiMAX reference circuit schematic ƒ = 2500 MHz

WiMAX Reference Circuit

PTF240101S

Data Sheet 10 of 12 Rev. 05, 2007-04-12Data Sheet 10 of 12 Rev. 05, 2007-04-12

Reference circuit assembly diagram (not to scale)*

WiMAX Reference Circuit (cont.)

*Gerber files for this circuit are available upon request.

240101s_wimax_assy

RF_OUT

RF_IN

VDD

Component Description Suggested Manufacturer P/N or Comment

C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND

C4 Tantalum capacitor, 10 µF, 35 V Digi-Key PCS6106TR-ND

C5 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND

C6, C11 Ceramic capacitor, 0.01 µF Digi-Key PCC103BCT-ND

C7, C10 Ceramic capacitor, 8.2 pF ATC 100B 8R2

C8 Ceramic capacitor, 0.6 pF ATC 100B 0R6

C9, C13 Ceramic capacitor, 6.8 pF ATC 100B 6R8

C12 Tantalum capacitor, 100 µF, 50 V Digi-Key P5571-ND

C15 Ceramic capacitor, 0.4 pF ATC 100B 0R4

Q1 Transistor Infineon BCP56

QQ1 Voltage Regulator National Semiconductor LM7805

R1 Chip resistor, 1.2k ohms Digi-Key P1.2KGCT-ND

R2 Chip resistor, 1.3k ohms Digi-Key P1.3KGCT-ND

R3 Potentiometer, 2k ohms Digi-Key 3224W-202ETR-ND

R4 Chip resistor, 2k ohms Digi-Key P2KECT-ND

R5, R6 Chip resistor, 5.1k ohms Digi-Key P5.1KECT-ND

R7 Chip resistor, 10 ohms Digi-Key P10ECT-ND

PTF240101S

Data Sheet 11 of 12 Rev. 05, 2007-04-12Data Sheet 11 of 12 Rev. 05, 2007-04-12

Package Outline Specifications

Package H-32259-2

Diagram Notes—unless otherwise specified:

1. Lead thickness: 0.21 ± 0.03 [.008 ± .001].

2. All tolerances ± 0.127 [.005].

3. Pins: D = drain, S = source, G = gate.

4. Interpret dimensions and tolerances per ASME Y14.5M-1994.

5. Primary dimensions are mm. Alternate dimensions are inches.

6. Gold plating thickness: 2.54 micron [100 microinch] (min).

Find the latest and most complete information about products and packaging at the Infineon Internet page

http://www.infineon.com/products

H-32259-2-1-2307

2X 3.30

[.130]

1.02 [0.040]

0.51 [0.020]

2X 0.20±0.03

[.008±.001]

4X R0.25

[R.010]

MAX.

0°-7°

DRAFT ANGLE

10.16±0.25

[.400±.010]

6.86

[.270]

2X 1.65±0.51

[.065±.020]

2X 1.27

[.050]

2X 3.30

[.130]

4X 0.51

[.020]

4X 0.25 MAX

[.010]

6.86

[.270]

6.48

[.255] SQ

0.74±0.05

[.028±.002]

LEAD COPLANARITY

BOTTOM OF LEAD

TO BOTTOM OF PACKAGE

.000±.002 (TYP)

1.78

[.070]

0.20±0.025

[.008±.001]

0.38

[.015]

6.35

[.250]SQ

7.37

[.290]

REF

60°

2.88±.25

[.114±.01]

Data Sheet 12 of 12 Rev. 05, 2007-04-12

GOLDMOS® is a registered trademark of Infineon Technologies AG.

Edition 2007-04-12

Published by

Infineon Technologies AG

81726 München, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics

(“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or

any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties

and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any

third party.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon

Technologies Office (www.infineon.com/rfpower).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question

please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of

Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support

device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are

intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it

is reasonable to assume that the health of the user or other persons may be endangered.

PTF240101S

Confidential, Limited Internal Distribution

Revision History: 2007-04-12 Data Sheet

Previous Version: 2006-12-15, Data Sheet

Page Subjects (major changes since last revision)

9, 10 Update and correct circuit diagrams and information

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