Ordering number:EN 1596C No.1596C Features - High breakdown voltage and 2SC3461 _NPN Triple Diffused Planar Silicon Transistor 800V/8A Switching Regulator Applications high reliability. _. Fast switching speed (tp: O.1ps typ.) Wide ASO. , - Adoption of MBIT process. Absolute Maximum Ratings at Ta=25C Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature _Blectrical Characteristics at Ta=25C Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product - Output Capacitance *: The 2SC3461 is classified by C.6A 112 C~E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage | C-E Sustain Voltage Turn-On Time Storage Time Fall Time - hep as follows: unit Vero 1100 VC. Vero 800 ~V Vv 7 OV EBO I 8 oA Icp PWS300ps,Duty Cycle$i0% 25 =A L y A Pe 9 Ta=25C. 140 OW Tj 150 % Tstg -55 to +150 % min typ max unit Teo Vopz800V,1,=0 : 10 pA bpp(1) Vogt5V,1=0.6A4 10% HOF hee(2) Vog5VsTc=3A 8 fr Vop=10V,1,=0.6A 15 MHz, Cob Vop?10V, f= 1MHz 155 pF VoR(sat) Io=4A,1,=0. 8A - 2.0 Vv VpE(sat) Ipz4a,I =0.8A 1.5 vV (BR)CBO Zc=1mA,Lp=0 1100 Vv v arg [p=5mA, Rpp=0o 800 Vv (BR)CEO Cc BE CEX(sus), tc=44 800 V 21p1=~Ipo=0. 8a, L=1mH,Clamped ton [Vog=400V, 0.5 ps tstg SIpo=-2.5Ipo=Ips6A, 3.0 ps te Ry, =66.72 0.3 ps Package Dimensions 2022 pr 20,0 4 Cunit:mm) (10 K 20 [15 L 30] 20 M 40] me 7997076 OOedbie uST = SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bidg., 1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 4237AT/DO54KI,TS No.1596-1/3 : Emitter | Cc: Collector B: Base SANYO: TO3PB 2803461 Switching Time Test Circuit PW Tet eat -A | 50mA Collector Current,I Collector-to-Emitter Voltage, Voy - V VoE(sat) - Ic 3 Ico/ 1Bp=5 Vorrsat) 7 6 9 e = 40C Collector Current ,Ip -~A Collector-to-Ewitter Saturation Vol. Ic - VBE Vop=5V - A Collector Current ,I Base-to-Ewitter Voltage, Vpp - Vv Unit (Resistance ; Q, Capacitance : F) hre - Ic bpp DC Current Gain 0 10 10 Collector Current,Ip - A VBE(sat) - Ic s Ic/ Ip=5 BE(sat) ~ a 3 ry I | 25 420C 1 7 Collector Current,Ip ~ A Base-to-Emitter Saturation,V SW.Time - I L8te ,SW Time ~ ps switching Time a Collector Current,I, - A mM 7557076 OO20113 336 113 2803461 Transient Thernal Resistance,Rth(t) - C/W Forward Bias A S 0 < , 0 Ic C Hi - 3 hi 10 & 3 a ue Q g on et 4 e Pulse 3} Tco=25C Collector-to-Emitter Voltage,Vop - V Rth -t To=25C eo 10 Time,t - ms S 100 1000 - _ oa Collector Current,I, - A 01--Ip2=0-8A 7} To=25C 100 000 Collector-to-Emitter Voltage, Vop - V . Pe - Te 100 c 60 Collector Dissipation, Pr -wW Case Temperature,Tc - C 114 Me 7997076 0020114 cee