BC857C,215 - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product data sheet

Supersedes data of 2003 Apr 09 2004 Jan 16

DISCRETE SEMICONDUCTORS

BC856; BC857; BC858

PNP general purpose transistors

2004 Jan 16 2

NXP Semiconductors Product data sheet

PNP general purpose transistors BC856; BC857; BC858

FEATURES

•Low current (ma x. 10 0 mA)

•Low voltage (max. 65 V).

APPLICATIONS

•General purpose switc hing and amplification.

DESCRIPTION

PNP transistor in a SOT23 plastic package.

NPN complements: BC846, BC847 and BC848.

MARKING

Note

1. * = p: made in Hong Kong.

* = t: made in Malaysia.

* = W: made in China.

PINNING

TYPE NUMBER MARKING CODE(1)

BC856 3D*

BC856A 3A*

BC856B 3B*

BC857 3H*

BC857A 3E*

BC857B 3F*

BC857C 3G*

BC858B 3K*

PIN DESCRIPTION

1base

2emitter

3collector

handbook, halfpage

MAM256

Top view

Fig.1 Simplified outline (SOT23 ) and symbo l .

ORDERING INFORMATION

TYPE

NUMBER PACKAGE

NAME DESCRIPTION VERSION

BC856 −plastic surface mounted package; 3 leads SOT23

BC857 −plastic surface mounted package; 3 leads SOT23

BC858 −plastic surface mounted package; 3 leads SOT23

2004 Jan 16 3

NXP Semiconductors Pr oduct data shee t

PNP general purpose transistors BC856; BC857; BC858

LIMITING VALUES

In accordance with the Absolute Maximum Sys tem (IEC 60134).

Note

1. Transistor mounted on an FR4 printed-cir cu i t board, standard footprint.

THERMAL CHARACTE RISTICS

Note

1. Transistor mounted on an FR4 printed-cir cu i t board, standard footprint.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base volta ge open emitter

BC856 − −80 V

BC857 − −50 V

BC858 − −30 V

VCEO collector-emitter voltage open base

BC856 − −65 V

BC857 − −45 V

BC858 − −30 V

VEBO emitter-base voltage open collector − −5 V

ICcollector current (DC) − −100 mA

ICM peak collector current − −200 mA

IBM peak base current − −200 mA

Ptot total power dissipation Tamb ≤ 25 °C; note 1 −250 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS TYPICAL UNIT

Rth(j-a) thermal resistance from junction to

ambient in free air; note 1 500 K/W

2004 Jan 16 4

NXP Semiconductors Pr oduct data shee t

PNP general purpose transistors BC856; BC857; BC858

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector-base cut-off current VCB = −30 V; IE = 0 − −1−15 nA

VCB = −30 V; IE = 0;

Tj = 150 °C−−−4μA

IEBO emitter-base cu t-off current VEB = −5 V; IC = 0 −−−100 nA

hFE DC current gain IC = −2 mA; VCE = −5 V

BC856 125 −475

BC857 125 −800

BC856A; BC857A 125 −250

BC856B; BC857B; BC858B 220 −475

BC857C 420 −800

VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − −75 −300 mV

IC = −100 mA; IB = −5 mA;

note 1 − −250 −650 mV

VBEsat base-emitt er saturatio n voltage IC = −10 mA; IB = −0.5 mA − −700 −mV

IC = −100 mA; IB = −5 mA;

note 1 − −850 −mV

VBE base-emitte r voltage IC = −2 mA; VCE = −5 V −600 −650 −750 mV

IC = −10 mA; VCE = −5 V −−−820 mV

Cccollector capacitance VCB = −10 V; IE = Ie = 0;

f = 1 MHz −4.5 −pF

fTtransition freque ncy VCE = −5 V; IC = −10 mA;

f = 100 MHz 100 −−MHz

Fnoise figure IC = −200 μA; VCE = −5 V;

RS = 2 kΩ; f = 1 kHz;

B = 200 Hz

−210 dB

2004 Jan 16 5

NXP Semiconductors Pr oduct data shee t

PNP general purpose transistors BC856; BC857; BC858

handbook, halfpage

200

300

400

500

hFE

100

MGT711

−10−2−10−1−1−10 −102−103

IC (mA)

(1)

(2)

(3)

Fig.2 DC current gain as a fu nction of collector

current; ty pical values.

BC857A; VCE = −5 V.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

−1200

−1000

−800

−600

−400

−200

MGT712

−10

−2

−10

−1

−1−10 −10

−10

IC (mA)

VBE

(mV)

(1)

(2)

(3)

Fig.3 Base-emitter voltage as a function of

collector current; typical values.

BC857A; VCE = −5 V.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

handbook, halfpage

−10

MGT713

−10

−1

−1−10 −10

−10

IC (mA)

VCEsat

(mV)

(1)

(2)(3)

Fig.4 Collector-emitter saturation voltage as a

function of collector current; typical values.

BC857A; IC/IB = 20.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

MGT714

−10

−1

−1−10 −10

−10

IC (mA)

−1200

−1000

−800

−600

−400

−200

VBEsat

(mV)

(1)

(2)

(3)

Fig.5 Base-emitter saturation v oltage as a

function of collector current; typical values.

BC857A; IC/IB = 20.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

2004 Jan 16 6

NXP Semiconductors Pr oduct data shee t

PNP general purpose transistors BC856; BC857; BC858

handbook, halfpage

400

600

800

1000

hFE

200

MGT715

−10−2−10−1−1−10 −102−103

IC (mA)

(1)

(2)

(3)

Fig.6 DC current gain as a fu nction of collector

current; ty pical values.

BC857B; VCE = −5 V.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

−1200

−1000

−800

−600

−400

−200

MGT716

−10

−2

−10

−1

−1−10 −10

−10

IC (mA)

VBE

(mV)

(1)

(2)

(3)

Fig.7 Base-emitter voltage as a function of

collector current; typical values.

BC857B; VCE = −5 V.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

handbook, halfpage

−10

MGT717

−10

−1

−1−10 −10

−10

IC (mA)

VCEsat

(mV)

(1)

(2)

(3)

Fig.8 Collector-emitter saturation voltage as a

function of collector current; typical values.

BC857B; IC/IB = 20.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

MGT718

−10

−1

−1−10 −10

−10

IC (mA)

−1200

−1000

−800

−600

−400

−200

VBEsat

(mV)

(1)

(2)

(3)

Fig.9 Base-emitter saturation v oltage as a

function of collector current; typical values.

BC857B; IC/IB = 20.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

2004 Jan 16 7

NXP Semiconductors Pr oduct data shee t

PNP general purpose transistors BC856; BC857; BC858

handbook, halfpage

400

600

800

1000

hFE

200

MGT719

−10−2−10−1−1−10 −102−103

IC (mA)

(1)

(2)

(3)

Fig.10 DC current gain as a function of collector

current; ty pical values.

BC857C; VCE = −5 V.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

−1200

−1000

−800

−600

−400

−200

MGT720

−10

−1

−1−10 −10

−10

IC (mA)

VBE

(mV)

(1)

(2)

(3)

Fig.11 Base-emitter voltage as a func tion of

collector current; typical values.

BC857C; VCE = −5 V.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

handbook, halfpage

−10

MGT721

−10

−1

−1−10 −10

−10

IC (mA)

VCEsat

(mV)

(1)

(2)

(3)

Fig.12 Collector-emitter saturation voltag e as a

function of collector current; typical values.

BC857C; IC/IB = 20.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

MGT722

−10

−1

−1−10 −10

−10

IC (mA)

−1200

−1000

−800

−600

−400

−200

VBEsat

(mV)

(1)

(2)

(3)

Fig.13 Base-emitter saturation voltage as a

function of collector current; typical values.

BC857C; IC/IB = 20.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

2004 Jan 16 8

NXP Semiconductors Pr oduct data shee t

PNP general purpose transistors BC856; BC857; BC858

PACKAGE OUTLINE

UNIT A

max. b

cDE e

Qwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

04-11-04

06-03-16

IEC JEDEC JEITA

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

0 1 2 mm

scale

1.1

0.9

Plastic surface-mounted package; 3 leads SOT2

2004 Jan 16 9

NXP Semiconductors Pr oduct data shee t

PNP general purpose transistors BC856; BC857; BC858

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product s ta tus of device(s) described in this document may have changed since this docu ment was published

and may differ in case of multiple devices. The latest product status information is available on th e Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production This document contains the prod uct specification.

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specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

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Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification .

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values a re s t ress ratings only and

operation of the device at these or an y other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values an d

Characteristics sections of this document, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No changes were made to the technical content, except for package outline

drawings which were updated to the latest version.

Printed in The Netherlands R75/06/pp10 Date of release: 2004 Jan 16 Document orde r number: 9397 750 12397