MOS PV USC t TRANSISTORS MOS Mos TRANSISTOREN DUAL P-CHANNEL ENHANCEMENT MODE MOSFETS Power eVcisVors Lead V(aryoss | V(sr)oc | Dissipation Iosse Jo(on) Vos(th) ros (on) | es Co Crss Yes o Vo1sVeos eT Con- Part No. Volts Volts Free Air nA mA Volts Ohms | umho F. pF Ratio mv pV/C Case} fig. Max Max mW . Typ Typ Min/Max Typ Typ yp Typ Typ Typ Typ. P.18 | P.20 *MEM 550 30 30 112 0.1* 5 3/6 250 1,500 11 11 0.85 70 _ 6 7 *MEM 550C 25 25 85 0.2* 3/-6 250 800 2.0 2.0 0.8 100 _ 6 7 MEM 551 30 40 112 0.03 pA| 5 3/-6 250 1,000 11 1.1 0.9 70 _ 6 7 MEM 551C 25 25 85 1.0 pA 5 3/-6 250 750 1.5 1.5 0.85 70 _ 6 7 $* MEM 954 30 30 112 0.03* _ 2.5/5.0 45 1,000 2.0 1.5 0.95 50 75 6 7 *MEM 954A 30 30 112 0.03* _ 2.0/5.0] 100 1,000 2.0 1.5 0.95 15 25 6 7 *MEM 954B 30 30 112 0.03* _ 2.0/5.0| 100 1,000 2.0 1.5 0.95 5 15 6 7 # MEM 955 35 40 112 0.02 pA 2.0/5.0] 100 1,000 2.0 1.5 0.95 50 75 6 7 MEM 955A 35 40 112 0.02 pA _ 2.0/5.0} 100 1,000 2.0 1.5 0.95 15 25 6 7 MEM 955B 35 40 112 0.02 pA _ 2.0/5.0} 100 1,000 2.0 1.5 0.95 5 15 6 7 2N 3609 25 25 350 0.02 3.25| 4.0/--6.0] 450 1,000 | 1.0 1.0 100 _ 6 8 2N 4066 30 40 112 0.5 32 3/6 300 2,900 4.0 0.6 0.85 100 _ 5 9 2N 4067 30 40 112 0.5 32 3/-6 125 4,200 4.0 0.6 0.6 70 _ 5 9 3N 147 30 40 150 1.0 32 2.0/6.0} 300 3,000 4.0 0.6 0.85 90 _ 5 1 3N 148 30 40 150 1.0 32 2.0/6.0 | 300 3,000 4.0 0.6 0.85 100 _ 5 1 *3N 151 30 30 162 0.05* 7 3/6 250 2,000 5.0 2.0 0.9 250 _ 6 7 *3N 165 40 40 300 0.05* 15 3.0/6.5] 250 2,000 2.5 0.7 0.9 100 _ 8 9 *3N 166 40 40 300 0.05 * 15 2.0/5.0} 250 2,000 2.5 0.7 _ 8 9 *3N 188 40 40 300 0.1* 15 2.0/5.0; 200 2,500 | 2.0 1.5 0.9 50 50 pV 6 7 *3N 189 40 40 300 0.1* 15 2.0/5.0} 200 2,500 2.0 1.5 _ _ _ 6 7 3N 190 40 40 300 1pA 15 2.0/5.0| 200 2,500 2.0 1.5 0.9 50 50 uv 6 7 3N 191 40 40 300 1pA 15 2.0/5.0} 200 2,500 2.0 15 _ 6 7 MEM 517C2M 25 25 350 1.0 50 | 2.5/5.0 45 |12,000 }10 _ _ _ _ 7 33 N-CHANNEL ENHANCEMENT MODE MOSFETS / : iLead wer Mian)ass AM (er}oss | V(ak)ne loss Iosse | to(on) Vas(in) fos{oi) Yis Cisse Cress Ten Tort: | Case |Con- Part No. Structure | 25C Anth}~ Volts. olts olts nA nA mA Volts Obms | umho iF F nsec |. nsec | P.18 | fig. mW Max | Max Max Max Typ Typ Typ. Min/Max Typ Typ yp yp Typ Typ: | P.19| P.20 MEM 562 . Triode 225 20 +30 +30 1 1pA 15 0.5/4.0 150 2,500 3.0 0,3 35 60 4 3 MEM 562C | Triode 175 20 +30 +30 21 10pA 15 0.5/4.0 150 2,000 3.0 0.5 40 60 4 3 MEM 563 Triode 225 20 +30 +30 1 1pA 40 0.5/4.0 40 5,000 4.0 0.3 20 60 4 3 # MEM 563C Triode 175 20 +30 +30 3] 10pA 40 0.5/4.0 50 4,000 4.0 0.4 20 60 4 3 *MEM 660 Triode4 150 20 +30 +30 _ _ 60 0.3/4 30" | 19,000 45 0.3 10 60 4 2 #*MEM 711 Triode 225 25 +30 +30 1 0.1* 40 0.5/1.5 50 3,000 45 0.5 10 65 4 3 #* MEM 712 Triode 200 25 +30 +30 1 .01 40 0.5/2.0 50 2,500 45 0.5 15 70 10 3 2N 4038 Triode 150 15 +50 +50 100 _ _ /2e _ 2,000 3.0 0.2 _ _ 4 3 2N 4351 Triode 225 25 +25 +25 5 5pA] 1.5 1.0/5.0 150 2,500 2.5 0.7 30 60 4 3 3N 169 Triode 300 25 +35 +35 10 0.01 |8mA 0.5/1.5 150 4,000 5.0 1.3 20 65 4 3 3N 170 Triode 300 25 +35 +35 10 0.01 |8mA 1.0/2.0 150 4,000 5.0 1.3 20 70 4 3 3N 171 Triode 300 25 +35 +35 10 0.01 |8mA 1.5/3.0 150 4,000 5.0 1.3 20 70 4 3 3N 175 Triode 225 30 +35 +35 1] 10pA 25 1.0/2.0 120 2,500 3.0 0.3 25 70 4 3 3N 176 Triode 225 25 +30 25 3] S0pA 20 1.0/2.5 200 2,000 4.0 0.4 35 70 4 3 3N 177 Triode 225 20 +30 +30 5 | 50pA 15 1.0/3.5 300 1,500 5.0 9.5 35 70 4 3 * Diode Protected Gate. * Grille protge par diode. * Gate mit Diode geschitzt. e Ves (cutoff). e Ves (coupe). Vcs Abschnirsspannung. k Vsu applied for enhancement mode operation. h Vsu appliqu en mode a enrichissement. 4 Vsu fir Betrieb im Anreicherungsbereich a Specified in four (4) resistance ranges. = Spcifi dans quatre (4) gammes de eingestellt. t Preferred type. Available from stock. rsistance. Eingeteilt in 4 Widerstandsbereiche. #t Type preferable. Disponible au magasin. t Vorzugstyp. Ab Lager lieferbar. 15