©2003 Fairchild Semiconductor Corporation Rev. A, February 2003
BSR57
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Value Units
VDGO Drain-Gate Voltage 40 V
VGSO Gate-Source Voltage - 40 V
IGF Forward Gate Current 50 mA
Ptot Total Power Dissipation up to Tamb=40°C 250 mW
TSTG Storage Temperature Range - 55 ~ 150 °C
TJJunction Temperature 150 °C
Symbol Parameter Test Cond ition Min. Max. Units
BVGSS G at e-Sou rce Voltage VDS = 0V, IC = 1.0µA40 V
IGSS Gate Reverse Current VGS = 20V, VDS = 0V 1.0 nA
IDSS Zero-Gate Voltage Drain Current VDS = 15V, VGS = 0V 20 100 mA
VGS(off) Gat e - So urce C u t- off Voltage VDS = 15V, ID = 0.5nA 2.0 6.0 V
VDS(on) Drain-Source On Voltage VGS = 0V, ID = 10mA 0.5 V
rds(on) Drain-Source On Reverse VGS = 0V, ID = 0 40 Ω
Crss Reverse Transfer Capacitance VDS = 0V, VGS = 10V 5.0 pF
tdDelay T ime VDD = 10V, VGS(on) = 0V
ID = 10mA, VGS(off) = 6.0V 6.0 ns
trRise T ime 4.0 ns
toff Turn-off Time 50 ns
BSR57
N-Channel Low-Frequency Low-Noise
Amplifier
• This device is designed for low-power chopper or switching application
sourced from process 51
SOT-23
1. Drain 2. Source 3. Gate
1
2
3
Mark: M5
Package Dimensions
BSR57
0.96~1.14
0.12
0.03~0.10
0.38 REF
0.40 ±0.03
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03 0.508REF
0.97REF 1.30 ±0.10 0.45~0.60
2.40 ±0.10
+0.05
–0.023
0.20 MIN
0.40 ±0.03
SOT-23
Dimensions in Millimeters
Rev. A, February 2003©2003 Fairchild Semiconductor Corporation
©2003 Fairchild Semiconductor Corporation Rev. I2
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