SFA1605GR - Taiwan Semiconductor - Datasheet.Directory

- 146 -

.412(10.5)

MAX

.185(4.70)

.175(4.44)

.055(1.40)

.045(1.14)

.27(6.86)

.23(5.84)

.11(2.79)

.10(2.54)

.025(0.64)

.014(0.35)

.154(3.91)

.148(3.74)

DIA

PIN1 2

.113(2.87)

.103(2.62)

.16(4.06)

.14(3.56)

.037(0.94)

.027(0.68)

.205(5.20)

.195(4.95)

.594(15.1)

.587(14.9)

.56(14.22)

.53(13.46)

SFA1601G THRU SFA1608G

16.0 AMPS. Glass Passivated Super Fast Rectifiers

Voltage Range

50 to 600 Volts

Current

16.0 Amperes

Features

a Low forward voltage drop

a High current capability

a High reliability

a High surge current capability

Mechanical Data

a Cases: Molded plastic

a Epoxy: UL 94V-O rate flame retardant

a Terminals: Leads solderable per MIL-

STD-202, Method 208 guaranteed

a Polarity: As marked

a High temperature soldering guaranteed:

250°C/10 seconds .16”,(4.06mm) from

case.

a Weight: 2.24 grams

TO-220A

Dimensions in inches and (millimeters)

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Type Number SFA

1601G SFA

1602G SFA

1603G SFA

1604G SFA

1605G SFA

1606G SFA

1607G SFA

1608G Units

Maximum Recurrent Peak Reverse Voltage 50 100 150 200 300 400 500 600 V

Maximum RMS Voltage 35 70 105 140 210 280 350 420 V

Maximum DC Blocking Voltage 50 100 150 200 300 400 500 600 V

Maximum Average Forward Rectified Current

@TC = 100°C 16.0 A

Peak Forward Surge Current, 8.3 ms Single

Half Sine-wave Superimposed on Rated Load

(JEDEC method ) 200 A

Maximum Instantaneous Forward Voltage

@ 16.0A 0.975 1.3 1.7 V

Maximum DC Reverse Current @ TA=25°C

at Rated DC Blocking Voltage @ TA=100°C 10

400 uA

Maximum Reverse Recovery Time (Note 1) 35 nS

Typical Junction Capacitance (Note 2) 170 140 pF

Typical Thermal Resistance RÛJC (Note 3) 2.0 °C/W

Operating Temperature Range TJ-65 to +150 °C

Storage Temperature Range TSTG -65 to +150 °C

Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A

Notes: 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.

Notes: 3. Thermal Resistance from Junction to Case Mounted on Heatsink.

- 147 -

FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM

50W

NONINDUCTIVE

NON

INDUCTIVE

OSCILLOSCOPE

(NOTE 1)

PULSE

GENERATOR

(NOTE 2)

DUT

(+)

50Vdc

(approx)

(-)

NOTES: 1. Rise Time=7ns max. Input Impedance=

1 megohm 22pf

2. Rise Time=10ns max. Sourse Impedance=

50 ohms

(-)

(+)

10W

NONINDUCTIVE

-1.0A

-0.25A

+0.5A

trr

1cm SET TIME BASE FOR

5/ 10ns/ cm

RATINGS AND CHARACTERISTIC CURVES (SFA1601G THRU SFA1608G)

FIG.3- TYPICAL REVERSE CHARACTERISTICS

INSTANTANEOUS REVERSE CURRENT.( A)

020 40 60 80 100 120 140

1000

.10

1.0

100

PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)

TC=25 C

TC=100 C

FIG.4- MAXIMUM NON-REPETITIVE FORWARD

SURGE CURRENT

PEAK FORWARD SURGE CURRENT. (A)

12 5 10 20 50

200

250

150

100

NUMBER OF CYCLES AT 60Hz

8.3ms Single Half Sine Wave

JEDEC Method

Tj=25 C

FIG.6- TYPICAL FORWARD CHARACTERISTICS

INSTANTANEOUS FORWARD CURRENT. (A)

.4 .6 .8 1.0 1.2 1.4 1.6 1.8

.01

0.1

.03

1.0

0.3

3.0

100

FORWARD VOLTAGE. (V)

Tj=25 C

Pulse Width=300 s

1% Duty Cycle

SFA1601G~SFA1604G

SFA1605G~SFA1606G

SFA1607G~SFA1608G

FIG.5- TYPICAL JUNCTION CAPACITANCE

CAPACITANCE.(pF)

152 10 20 50 100 200 500

100

150

200

250

300

REVERSE VOLTAGE. (V)

Tj=25 C

SFA1601G~SFA1604G

SFA1605G~SFA1608G

FIG.2- MAXIMUM FORWARD CURRENT DERATING CURVE

AVERAGE FORWARD CURRENT. (A)

050 100 150

CASE TEMPERATURE. ( C)