Numerical Index 2N3262-2N3371 =| > MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS i= = = = = || REPLACE- | PAGE Po 7B] Ty | Vee | Vee |= tre @ Ic Voeisan @ le 2) _ le We 2 /5| ment | numper | USE 3 2 al |B} 23 =\o @ 25C | BS] C | Wwolts) | (volts) |S | (min) (max) 5} (volts) = 3 s\s 2N3262 S| N HSS | 8.75W| C | 200 100 80] 0 40 O.5A 0.6 1L.0A 150M | T 2N3263 S|] N PMS 75W | Cc | 200 150 90,0 20 55 15A 1.0 20A 20M | T 2N3264 S|N PMS 75w | c | 200 120 60] 0 20 80 5A 1.6 20A 20M |T 2N3265 S|N PMS 125W]} Cc | 200 150 90) 0 20 55 15A 1.0 20A 20M | T 2N3266 S| N PMS 125W |] C | 200 120 60/0 20 80 15A 1.6 20A 20M | T 2N3267 Gy] P RFA 75M | A | 100 15 8.0] 0 10} 500 3.0M IS |E 900M | T 2N3268 S| N AFA | 0.15W | A | 200 45 4510 12 80 LOM 1.0 5.0M 40 }E 2.5M]B 2N3269 thru Thyristors, see Table on Page 1-154 2N3276 pneree Field Effect Transistors, see Table on Page 1-166 2N3279 G| P 9-49 RFA O.1W} A] 100 30 20]0 10 70 3,0M 0.3 5.0M LO|E 400M | T 2N3280 G| P 9-49 RFA 0.1W{ A} 100 30 20] 0 10 70 3.0M 0.3 5.0M lO) E 400M | T 2N3281 Gy] P 9-49 RFA O.1W] A] LOO 30 15] 0 10 | 100 3.0M 0.5 5.0M lO] E 300M | T 2N3282 G| P 9-49 RFA O.1W] A} LOO 30 15] 0 10 | 100 3.0M 0.5 5.0M LO] E 300M | T 2N3283 G| P 9-51 RFC O.1W yA } 100 25 25)]8 10 3.0M 10 | E 250M | T 2N3284 G|P 9-51 RFC O.1W | A f 100 25 25]S8 10 3.0M 1O|E 250M | T 2N3285 Gy] P 9-51 RFC O.1W {A } 100 20 20}S5]5.0 3.0M 5.0]/E 250M | T 2N3286 G| P 9-51 RFC O,1lw] A} 100 20 20}S ]5.0 3.0M 5.0]E 250M | T 2N3287 SIN 9-54 REA 0.2W | At 200 40 2010 15] 100 2.0M 0,3 5.0M I5|/E 350M | T 2N3288 S| N 9454 RFA 0.2W] A] 200 40 20]0 15 | 100 2,0M} 0.3 5.0M I5|E 350M | T 2N3289 S| N 9-54 REA 0.2W | A |} 200 30 15) 0 10 | 150 2.0M 0.4 5,0M LO] E 300M | T 2N3290 Sj WN 9-54 RFA Q.2W | A | 200 30 15 |0 10 {150 2.0M] 0.4 50M 10/E 300M | T 2N3291 S|N 9-56 RFC 0.2W | A | 200 25 25 |S 10 2.0M 10 | E 250M | T 2N3292 S]N 9-56 RFC 0.2W | A | 200 25 2518 10 2.0M 10 | E 250M | T 2N3293 S|] N 9-56 RFC 0.2W | A | 200 20 20]S 10 2,0M 10/E 250M | T 2N3294 S|N 9-56 RFC 0.2W | A | 200 20 20/8 10 2,.0M 1lO/E 250M | T 2N3295 S|N 9-58 MPA 800M | A | 175 60 60] 5S 20 60 10M 0.5 0.154 200M | T 2N3296 SEN 9-61 MPA 700M | A} 175 60 60}S]5.0 50 40M 0.5 0.44 LOOM | T 2N3297 S| N 9-64 MPA 25W | Cc] 175 60 60 |S 42.5 35 0.44 0.5 1.0A LOOM | T 2N3298 S|N 9-67 HPA L.0W | C] 175 25 15 | 0 80 | 240 10M 200M | T 2N3299 S| N 8-219] HSS 0.8W | A | 200 60 30] 0 40 | 120] 0.154 | 0.22 0.15A 250M | T 2N3300 S|N 8-219} HSS 0.8W] A | 200 60 30 | O | 100 } 300 | 0.15A | 0.22 0.154 250M | T 2N3301L S| N 8-219] HSS | 0.36W | A | 200 60 30] 0 40 | 120 | 0.15A | 0.22 O.15A 250M | T 2N3302 S|[N 8-219} HSS | 0.36W | A | 200 60 30 | O | 100 | 300 |] 0.154 | 0.22 0,158 250M | T 2N3303 S| N 8-221] HSS 0.6W]} A | 200 25 12 | 0 30 | 120 0.34 10.33 O.3A 450M | T 2N3304 S| P 8-223} MSS 0.3W | A | 200 6.0 6.0]0 30] 120 LOM | 0.16 LOM 500M | T 2N3305 S| P AFA 0.6W | A | 200 50 40] 0 40 | 120 0,1M 0.2 10M 40/E 20M | T 2N3306 S| P AFA 0.6W | A | 200 50 40 | 0 | 100 | 300 0.1M 0.2 10M 70] E 20M | T 2N3307 S| P 9-69 RFA 0.2W | A | 200 40 35] 0 40 | 250 2.0M 0.4 3.0M 40/E 300M | T 2N3308 S| P 9-69 RFA 0.2W | A | 200 30 25] 0 25 | 250 2.0M 0.4 3.0M 25 ]/E 300M | T 2N3309 S|} N | 2N3553 9-74 MPA 3.5W] C4175 50 50] S |5.0} 100 30M 0.5 0.25A 300M | T 2N3309A4 | S| N | 2N3553 9-74 HPA 5.OW | c } 200 60 60/S ]8.0 80 50M] 0.5 0.254 300M | T 2N3310 S| N HPA 0.3W | A | 200 35 15] 0 10 20M 0.5 20M 300M | T 2N3311 G| P 7-108] LPA 170W | C |; 110 30 30/58 60 | 120 3.0A o.1 3.0A 30 )E L.OK]E 2N3312 G| P 7-108] LPA 170w | | 110 45 45 | Ss 60 | 120 3.0A O.L 3.0A 30]E 1.0K/E 2N3313 G| P 7-108] LPA 170W | Cc } 110 60 60 |S 60 | 120 3.0A O.1 3.0A 30/E L.OK | E 2N3314 Gj P 7~108| LPA 170W | c | 110 30 30] S | 100 | 200 3.0A a.1 3.0A 40/E 1.0K] E 2N3315 Gi] P 7-108) LPA 170W | c | 110 45 45 |S 1100] 200 3.0A O.1 3.0A 40 |E 1.0K] E 2N3316 Gi P 7-108; LPA L70W | C; 110 60 60; 5 ; LOQ; 200 3.0A Q.t 3.0A 40,5 LOK] E 2N3317 Ss] P CHP | 0.15W | A | 140 30 30] 0 6.4M | T 2N3318 s| P CHP | 0.15W | A | 140 15 15] 0 7,.6M/T 2N3319 Ss] P CHP | 0.15W] A | 140 10 6.0] 0 12M | T 2N3320 G| P HSS 60M | A | 100 15 10 | 0 50 20M | 0.19 40M 600M | T 2N3321 Gy] P HSS 60M | A | 100 12 7.0] 0 | 100 1oM | 0.12 10M 600M | T 2N3322 G| P HSs 60M | A} 100 12 7.0] 0 30 40M | 0.25 20M 600M | T 2N3323 G| P 9n71 RFC | 0.15W | A | 100 35 35 |S 30 | 200 3,0M 30]/E 200M | T 2N3324 G| P G71 RFC | 0.15W | A | 100 35 35/8 30 | 200 3.0M 30] E 200M | T 2N3325, G|P 9-71 | RFC] 0.15W| A | 100 35 35 |S 30 | 200 3.0M 30, E 200M | T 2N3326 S] Nj 2N2218A 8-114] HSA 0.8W] A] 175 60 4510 40] 120] 0.15A 0.4 0.154 250M | T 2N3327 S| N HPA 20W | C | 200 65 6510 10 O.5A 100M | T 2N3328 oNaa x6 Field Effect Transistors, see Table on Page 1-166 N333 2N3337 SS} N | 2N3287 9-54 RFA 0.3W |] A | 200 40 40] 0 30 | 300 4.0M 30/E 400M { T 2N3338 S| N | 2N3289 9-54 RFA 0.3W] A | 200 40 40] 0 30 | 300 4,0M 30] E 400M | T 2N3339 S| Nj 2N3288 9-54 RFA 0.3W} A | 200 40 40] 0 30 | 300 4.0M 30/ E 400M | T 2N3340 Ss; N MSS 0.4W 7] A | 175 30 20} 0 40 1o* 0.2 10* 70M | T 2N3341 S| P MSS 0.4W 7) A | 175 30 2010 40 Lo* | 0.25 10* 50M | T 2N3342 Ss} P MSS | 0,25W] A} 175 20 8.0} 0 30 5,0M 0.1 5.0M 2N3343 Ss}; P CHP | 0.25W] A | 175 25 8.0] 0 20 0.25M 2.0M| T 2N3344 S| P CHP | 0.25W] A | 175 30 30] 0 25 1.0M 2.0M| T 2N3345 S| P CHP | 0.25W] A} 175 50 50] 0 15 1.0M 2.0M| T 2N3346 S| P CHP | 0.25W] A] 175 50 50] 0 25 1.0M 2.0M/ T 2N3347 S| P DFA 300M | A | 175 60 45] 0 40 | 300 10* 0.5 10M 60] E 60M | T 2N3348 S| P DFA 300M | A | 175 60 4510 40 | 300 10* 0.5 10M 60} E 60M | T 2N3349 S| P DFA 300M | A | 175 60 45/0 40 | 300 10* 0.5 10M 60} E 60M| T 2N3350 S| P DFA 300M] A | 175 60 45 | 0] 100] 300 10* 0.5 10M 150] E 60M | T 2N33521 Ss] P DFA 300M | A | 175 60 45 | 0] 100] 300 10* 0.5 10M 150] E 60M | T 2N3352 si P DFA 300M] A | 175 60 45 | 0 | 100] 300 10* 0.5 10M 150] E 60M | T 2N3353 thru Thyristors, see Table on Page 1-154 2N3364 2N3365 thru Field Effect Transistors, see Table on Page 1-166 2N3370 2n3371 | G| P| | [eral isom]a|ioo{| 25| 10}/o| 20| 300] 12m 25{ | 320M 1-138WWI XX '/Wwr~w isi BCB}OH, CBCj})(@iCiiC SS K'""'w;')WwWNQDQ))Ww& w Power Transistors GERMANIUM PNP POWER TRANSISTOR SELECTOR GUIDE -3-AMP HIGH-FREQUENCY DRIVER hee Ves) 30V | 45v | 6ov | 75v | 90v te = O.5 A, \ LOW eto - Ver = 2 Vos 30V 45V 60V 75V 90V foe ne Gob, 30-60 2N2137| 2N2138 | 2N2139| 2N2140| 2N2141 10.3 7 yo-a1t@ 50-100 2N2142 | 2N2143|2N2144 | 2N2145 | 2N2146 -3-AMP 3 GENERAL: PURPOSE te, [Nes } aov | cov | 75v | 100v Po = 106 W LIFIER Va=4V | Ves ) 50v | 80v | 100v | 120V fy = 0.35 MHz Gas 35.90 2N1359| 2N375 |2N1362 | 2N1364 Toa 60-140 2N1360| 2N618 |2N1363 |2N1365 p 5-AMP ~cENERAL-PURPOSE be, [Ves] 30v | a5v | cov | 75v | 90V ps = t06w SWITCH AND AMPLIFIER Ve=2 [Vc J 40V_ | 60v_| gov | 100v | 120V ~ 20-40 1.0.35 MHz 2N1529 | 2N1530 | 2N1531 | 2N1532| 2N1533 35-70 ae, Ge ose wz 2N1534 | 2N1535 | 2N1536 | 2N1537| 2N1538 103 T0410 50-100 2N1539 | 2N1540 | 2N154] | 2N1542 | 2N1543 f; - 0.4 MHz 75-150 hos Miz 2N1544 |2N1545 | 2N1546 | 2N1547 | 2N1548 Pr S-AMP ich oc GAIN Ire Voss} 30 45V 60V LOW-SATURATION SWITCH lea 3A, Pp = 170W . Ve=2V | Vee} 30 45V 60V fy 0.3 MHz Fives 60-120 2N3311 2N3312 2N3313 100-200 2N3314 2N3315 2N3316 ~ 7-AMP TciGain AUDIO hee AMPLIFIER le=14, | Vets 50V P= 106 W | Vor = 2 f; 0.32 MHz ars i 74-250 MP110 - 7-AMP ECONOMY LINE AMPLIFIER ty, [Vos} sov | sv | cov | 75v Va=2 | Ves } 40V 60V | 80V | 100V Po = 77W fy 0.6 MHz 30-60 2N3615 | 2N3616 Ges yes 35-70 2N3611| 2N3612 703 TO4ITO 45-90 2N3617 | 2N3618 60-120 2N3613 | 2N3614 -7-AMP ECONOMY LINE AMPLIFIER he Ves) gov | asv | cov | 75v le=3A, Po=77W Gs Ve=2 | Vo } 40v | 6ov | 75V | 90V f; 0.6 MHz 709 30-200 MP2060|MP2061| MP2062| MP2063Power Transistors -~- 2N3011 thru 2N3316 (GERMANIUM) P, = 170W Ic=5A Vice = 30-60 V PNP germanium power transistors for high-power applications. CASE 5 (TO-36) MAXIMUM RATINGS . 2N3311 2N3312 2N3313 . Rating Symbol 2n3314| 2n3315 | anaaie | Unit Collector-Base Voltage VcB 30 45 60 | Volts Collector-Emitter Voltage Vors 30 45 60 Volts Collector-Emitter Voltage VCEO 20 30 40 | Volts Emitter-Base Voltage VEB 20 25 30 Volts Collector Current (Continuous) Ic 5 5 5 Amp Power Dissipation at To = 25C Ph 170 170 170 Watts Junction Temperature Range Ty; -65 to +110 C Thermal Resistance dsc 0.5 C/W POWER-TEMPERATURE DERATING CURVE 170 150 125 100 75 50 25 0 The maximum continuous power is related to maximum junctiontempera- ture by the thermal resistance factor. This curve has a value of 170 Watts at case temperatures of 25C and is 0 Watts at 110C with a linear relation between the two temperatures such that: P,, POWER DISSIPATION (WATTS) 10 20 30 40 50 60 706 80 90 100 110 Tc, CASE TEMPERATURE (C) allowable Pp = 110 - Tc 0.5 7-1082N3311 thru 2N3316 (continued) Power Transistors ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Symbol | min Max Unit | Collector-Emitter Breakdown Voltage* BV oRo* Vde ere = 500 mAdc, Ib = 0) 2N3311, 2N3314 20 - 2N3312, 2N3315 30 - 2N3313, 2N3316 40 - Collector-Emitter Breakdown Voltage* BY ops* Vde Mo = 300 mAdc, Vor = 0) 2N3311, 2N3314 30 - 2N3312, 2N3315 45 - 2N3313, 2N3316 60 - Collector Cutoff Current luzo mAdc Vor = 10 Vdc, LB = 0) 2N3311, 2N3314 - 200 Vor = 15 Vde, I, = 0) 2N3312, 2N3315 - 200 Vor = 20 Vdc, I, = 0) 2N3313, 2N3316 - 200 Collector Cutoff Current lopx mAdc Vor = 25 Vdc, Vor = 1.0 Vdc, Te = 100C) 2N8311, 2N3314 - 35 Vopr = 40 Vdc, Vor = 1.0 Vdc, Te = 100C) 2N3312, 2N3315 - 35 Vor = 55 Vde, Vor = 1.0 Vdc, To = 100C) 2N3313, 2N3316 - 35 Collector-Base Cutoff Current lopo mAdc Vv 2V J ~ - 5.0 CB CB max Van = 2.0 Vdc, I = 0) - 0.3 Emitter-~Base Cutoff Current lepo mAdc Von eV , 1. = 9) . - 4.0 BE BE max C ON CHARACTERISTICS DC Current Gain hor - My = 500 mAdc, Voz = 2.0 Vdc) 2N3311 thru 2N3313 - 150 2N3314 thru 2N3316 - 290 MI = 3.0 Adc, Vop = 2.0 Vdc) 2N3311 thru 2N3313 60 120 2N3314 thru 2N3316 100 200 Collector-Emitter Saturation Voltage Vor(sat) Vde (I, = 3.0 Adc, In = 300 mAdc) . - 0.1 Base-Emitter Voltage Verio ) Vdc (I, = 3.0 Ade, Vag = 2.0 Vac) 2N3311 thru 2N3313 On. - 0.6 2N3314 thru 2N3316 - 0.5 DYNAMIC CHARACTERISTICS Common Emitter Cutoff Frequency oO kHz (I, = 3.0 Ade, Vag = 2.0 Vde) Lol - Small Signal Current Gain hy - (To, = 3.0 Adc, Vor = 2.0 Vdc, f = 0.5 kHz) 2N3311 thru 2N3313 e 30 90 2N3314 thru 2N3316 40 120 *To avoid excessive heating of the collection junction, perform these tests with an oscilloscope. 7-1092N3311 thru 2N3316 (continued) \c, COLLECTOR CURRENT (AMP) \e, COLLECTOR CURRENT (AMP) eso (MILLIAMPERES) 2N3311, 2N3314 (25 usec to 5 msec pulse) \ PEAK lms 5 ms Jejwaxy CONT. 170-WATT AVERAGE POWER DISSIPATIGN AT 25C CASE TEMPERATURE Dc 10 20 Power Transistors 25-50 us 250 500 ns SAFE OPERATING AREA 30 Vor COLLECTOR-EMITTER VOLTAGE (VOLTS) 2N3312, 2N3315 (25 ns to 5 ms pulse) le PEAK lopmaxy CONT. oc t70-WATT AVERAGE POWER DISSIPATION AT 25C CASE TEMPERATURE 10 20 30 40 25-50 us 250 us 500 us 50 Voce, COLLECTOR-EMITTER VOLTAGE (VOLTS) The Safe Operating Area Curves indicate the I--V, limits below which the devices will not go into secondary break- down. As the safe operating areas shown are independent of temperature and duty cycle, these curves can be used as long as the average power derating curve is also taken into con- sideration to insure operation below the maximum junction temperature. 40 2N3313, 2N3316 (25 us to 5 ms pulse) Io PEAK lms 25-50 us 5 ms 250 us 500 ys leaax) CONT. 170-WATT AVERAGE POWER DISSIPATION AT 25C CASE TEMPERATURE to, COLLECTOR CURRENT (AMP) 60 0 iG 20 30 40 50 60 70 Vee, COLLECTOR-EMITTER VOLTAGE (VOLTS) TEMPERATURE CHARACTERISTICS Igo versus TEMPERATURE 20 40 60 80 Tc, CASE TEMPERATURE (C) 100 hee, (% Of hye @ 25C) Bre, (% of Bee @ 25C) 130 120 110 100 90 80 70 _ 60 -40 20 0 20 40 60 80 To, CASE TEMPERATURE ( C) DC TRANSCONDUCTANCE versus CASE TEMPERATURE 130 120 110 100 90 80 70 60 -40 ~ 20 0 20 40 60 80 Tc, CASE TEMPERATURE (C) 7-110