IRF7313PbF
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage 0.78 1.0 V TJ = 25°C, IS = 1.7A, VGS = 0V
trr Reverse Recovery Time 45 68 ns TJ = 25°C, IF = 1.7A
Qrr Reverse RecoveryCharge 58 87 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
30
2.5
A
S
D
G
Surface mounted on FR-4 board, t ≤ 10sec.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 4.0A, di/dt ≤ 74A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
Starting TJ = 25°C, L = 10mH
RG = 25Ω, IAS = 4.0A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆T
JBreakdown Voltage Temp. Coefficient 0.022 V/°C Reference to 25°C, ID = 1mA
0.023 0.029 VGS = 10V, ID = 5.8A
0.032 0.046 VGS = 4.5V, ID = 4.7A
VGS(th) Gate Threshold Voltage 1.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 14 S VDS = 15V, ID = 5.8A
1.0 VDS = 24V, VGS = 0V
25 VDS = 24V, VGS = 0V, TJ = 55°C
Gate-to-Source Forward Leakage 100 VGS = 20V
Gate-to-Source Reverse Leakage -100 VGS = -20V
QgTotal Gate Charge 22 33 ID = 5.8A
Qgs Gate-to-Source Charge 2.6 3.9 nC VDS = 15V
Qgd Gate-to-Drain ("Miller") Charge 6.4 9.6 VGS = 10V, See Fig. 10
td(on) Turn-On Delay Time 8.1 12 VDD = 15V
trRise Time 8.9 13 ID = 1.0A
td(off) Turn-Off Delay Time 26 39 RG = 6.0Ω
tfFall Time 17 26 RD = 15Ω
Ciss Input Capacitance 650 VGS = 0V
Coss Output Capacitance 320 pF VDS = 25V
Crss Reverse Transfer Capacitance 130 = 1.0MHz, See Fig. 9
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
Ω
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
nA
ns