2N5109 SILICON NPN RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Power Dissipation (TC=75C) Operating and Storage Junction Temperature VEBO IC UNITS V 20 V 3.0 V 400 mA IB PD PD 400 mA 1.0 W 2.5 W TJ, Tstg -65 to +200 C ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICEV VCE=35V, VBE=1.5V ICEV 40 MAX 5.0 UNITS mA VCE=15V, VBE=1.5V, TC=150C VCE=15V 5.0 mA ICEO 20 A IEBO VEB=3.0V 100 A BVCBO IC=0.1mA 40 V BVCER IC=5.0mA, RBE=10 IC=5.0mA 40 V BVCEO VCE(SAT) 20 hFE IC=100mA, IB=10mA VCE=15V, IC=50mA 40 hFE VCE=5.0V, IC=360mA 5.0 fT Cob VCE=15V, IC=50mA, f=200MHz VCB=15V, IE=0, f=1.0MHz NF VCE=15V, IC=10mA, f=200MHz GPE VCE=15V, IC=50mA, f=200MHz V 0.5 210 1200 MHz 3.5 3.0 11 V pF dB dB R4 (7-June 2011) 2N5109 SILICON NPN RF TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R4 (7-June 2011) w w w. c e n t r a l s e m i . c o m