PBSS4160DS/T1 - NXP - Datasheet.Directory

1. Product profile

1.1 General description

NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a SOT457

(SC-74) Surface Mounted Device (SMD) plastic package.

PNP/PNP complement: PBSS5160DS.

1.2 Features

Low collector-emitter saturation voltage VCEsat

High collector current capability: IC and ICM

High collector current gain (hFE) at high IC

High efficiency due to less heat generation

Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

Dual low power switches (e.g. motors, fans)

Automotive applications

1.4 Quick reference data

[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.

[2] Pulse test: tp≤300 μs; δ≤0.02.

PBSS4160DS

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

Rev. 04 — 11 December 2009 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transis tor

VCEO collector-emitter voltage open base - - 60 V

ICcollector current [1] --1A

ICM peak collector current single pulse;

tp≤1ms --2A

RCEsat collector-emitter saturation

resistance IC=1A;

IB= 100 mA [2] - 200 250 mΩ

Product data sheet Rev. 04 — 11 December 2009 2 of 14

NXP Semiconductors PBSS4160DS

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

2. Pinning information

3. Ordering information

4. Marking

5. Limiting values

Table 2. Pinning

Pin Description Simplified outline Symbol

1emitter TR1

2 base TR1

3 collector TR2

4emitter TR2

5 base TR2

6 collector TR1

132

sym020

TR1

TR2

Table 3. Ordering information

Type number Package

Name Description Version

PBSS4160DS SC-74 plastic surface mounted package (TSOP6); 6 leads SOT457

Table 4. Marking codes

Type number Marking code

PBSS4160DS B8

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per transis tor

VCBO collector-base voltage open emitter - 80 V

VCEO collector-emitter voltage open base - 60 V

VEBO emitter-base voltage open collector - 5 V

ICcollector current [1] -0.87A

[2] -1A

[3] -1A

ICM peak collector current single pulse; tp≤1ms - 2 A

IBbase current - 300 mA

IBM peak base current single pulse; tp≤1ms - 1 A

Product data sheet Rev. 04 — 11 December 2009 3 of 14

NXP Semiconductors PBSS4160DS

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.

Ptot total power dissipation Tamb ≤25 °C[1] -290mW

[2] -370mW

[3] -450mW

Per device

Ptot total power dissipation Tamb ≤25 °C[1] -420mW

[2] -560mW

[3] -700mW

Tjjunction temperature - 150 °C

Tamb ambient temperature −65 +150 °C

Tstg storage temperature −65 +150 °C

(1) Ceramic PCB, Al2O3, standard footprint

(2) FR4 PCB, mounting pad for collector 1 cm2

(3) FR4 PCB, standard footprint

Fig 1. Power derating curves

Table 5. Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

006aaa493

Tamb (°C)

0 16012040 80

400

200

600

800

Ptot

(mW)

(3)

(2)

(1)

Product data sheet Rev. 04 — 11 December 2009 4 of 14

NXP Semiconductors PBSS4160DS

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per transis tor

Rth(j-a) thermal resistance from

junction to ambient in free air [1] --431K/W

[2] --338K/W

[3] --278K/W

Rth(j-sp) thermal resistance from

junction to solder point --105K/W

Per device

Rth(j-a) thermal resistance from

junction to ambient in free air [1] --298K/W

[2] --223K/W

[3] --179K/W

FR4 PCB, standard footprint

Fig 2. Transient thermal impedance from junctio n to ambient as a function of pulse time; typical values

006aaa494

10−51010−2

10−4102

10−1

tp (s)

10−3103

102

103

Zth(j-a)

(K/W)

0.10

0.05

0.02

0.01

δ = 1

0.75

0.50

0.33

0.20

Product data sheet Rev. 04 — 11 December 2009 5 of 14

NXP Semiconductors PBSS4160DS

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

FR4 PCB, mounting pad for collector 1 cm2

Fig 3. Transient thermal impedance from junctio n to ambient as a function of pulse time; typical values

Ceramic PCB, Al2O3, standard footprint

Fig 4. Transient thermal impedance from junctio n to ambient as a function of pulse time; typical values

006aaa495

10−51010−2

10−4102

10−1

tp (s)

10−3103

102

103

Zth(j-a)

(K/W)

0.20

0.10

0.05

0.02

0.01

δ = 1

0.75

0.50

0.33

006aaa496

10−51010−2

10−4102

10−1

tp (s)

10−3103

102

103

Zth(j-a)

(K/W)

0.20

0.10

0.05

0.02

0.01

δ = 1

0.75

0.50

0.33

Product data sheet Rev. 04 — 11 December 2009 6 of 14

NXP Semiconductors PBSS4160DS

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

7. Characteristics

[1] Pulse test: tp≤300 μs; δ≤0.02.

Table 7. Characteristics

Tamb =25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

Per transis tor

ICBO collector-base cut-off

current VCB =60V; I

E= 0 A - - 100 nA

VCB =60V; I

E=0A;

Tj= 150 °C--50μA

ICES collector-emitter cut-off

current VCE =60V; V

BE = 0 V - - 100 nA

IEBO emitter-base cut-of f curr ent VEB =5V; I

C= 0 A - - 100 nA

hFE DC current gain VCE =5V; I

C= 1 mA 250 500 -

VCE =5V; I

C=500mA [1] 200 420 -

VCE =5V; I

C=1A [1] 100 180 -

VCEsat collector-emitter saturation

voltage IC= 100 mA; IB=1mA - 90 110 mV

IC= 500 mA; IB= 50 mA - 115 140 mV

IC=1A; I

B=100mA [1] - 200 250 mV

RCEsat collector-emitter saturation

resistance IC=1A; I

B=100mA [1] - 200 250 mΩ

VBEsat base-emitter saturation

voltage IC=1A; I

B=50mA [1] - 0.95 1.1 V

VBEon base-emitter turn-on

voltage VCE =5V; I

C=1A [1] - 0.82 0.9 V

tddelay time IC=0.5A; I

Bon =25mA;

IBoff =−25 mA -11-ns

trrise time - 78 - ns

ton turn-on time - 90 - ns

tsstorage time - 340 - ns

tffall time - 160 - ns

toff turn-off time - 500 - ns

fTtransition frequency VCE =10V; I

C=50mA;

f = 100 MHz 150 220 - MHz

Cccollector capacitance VCB =10V; I

E=i

e=0A;

f=1MHz - 5.5 10 pF

Product data sheet Rev. 04 — 11 December 2009 7 of 14

NXP Semiconductors PBSS4160DS

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

VCE =5V

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

VCE =5V

(1) Tamb =−55 °C

(2) Tamb =25°C

(3) Tamb = 100 °C

Fig 5. DC current gain as a function of collector

current; typical values Fig 6. Base-emitter voltage as a function of collector

current; typical values

IC/IB=20

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

Tamb =25°C

(1) IC/IB= 100

(2) IC/IB=50

(3) IC/IB=10

Fig 7. Collector-emitter saturation voltage as a

function of collector current; typical values Fig 8. Collector-emitter saturation voltage as a

function of collector current; typical values

006aaa505

IC (mA)

10−1104

103

110

400

200

600

800

hFE

(3)

(2)

(1)

006aaa506

0.6

0.8

0.4

1.0

1.2

VBE

(V)

0.2

IC (mA)

10−1104

103

110

(3)

(2)

(1)

006aaa513

IC (mA)

10−1104

103

110

10−1

VCEsat

(V)

10−2

(3)

(2)

(1)

006aaa514

10−1

10−2

VCEsat

(V)

10−3

IC (mA)

10−1104

103

110

(3)

(2)

(1)

Product data sheet Rev. 04 — 11 December 2009 8 of 14

NXP Semiconductors PBSS4160DS

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

IC/IB=20

(1) Tamb =−55 °C

(2) Tamb =25°C

(3) Tamb = 100 °C

IC/IB=20

(1) Tamb = 100 °C

(2) Tamb =25°C

(3) Tamb =−55 °C

Fig 9. Base-emitter saturation voltage as a function

of collector current; typical values Fig 10. Collector-emitter satur ation resistance as a

function of collector current; typical values

Tamb =25°CT

amb =25°C

(1) IC/IB= 100

(2) IC/IB=50

(3) IC/IB=10

Fig 11. Collector current as a function of

collector -em itter voltage; ty pic a l va lues Fig 12. Collector-emitter satur ation resistance as a

function of collector current; typical values

006aaa509

0.6

0.8

0.4

1.0

1.2

VBEsat

(V)

0.2

IC (mA)

10−1104

103

110

(3)

(2)

(1)

006aaa515

IC (mA)

10−1104

103

110

102

103

RCEsat

(Ω)

10−1

(3)

(2)

(1)

006aaa511

VCE (V)

05312 4

0.8

1.2

0.4

1.6

2.0

(A)

IB (mA) = 65.0

13.0

6.5

58.5

52.0

26.0

39.0

45.5

32.5

19.5

006aaa516

IC (mA)

10−1104

103

110

102

103

RCEsat

(Ω)

10−1

(3)

(2)

(1)

Product data sheet Rev. 04 — 11 December 2009 9 of 14

NXP Semiconductors PBSS4160DS

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

8. Te st information

Fig 13. BISS transistor switching time definition

IC= 0.5 A; IBon =25mA; I

Boff =−25 mA; R1 = open; R2 = 100 Ω; RB= 300 Ω; RC=20Ω

Fig 14. Test circuit for switching times

006aaa003

IBon (100 %)

input pulse

(idealized waveform)

IBoff

90 %

10 %

IC (100 %)

ton

90 %

10 %

output pulse

(idealized waveform)

toff

DUT

mlb826

(probe)

450 Ω

(probe)

450 Ω

oscilloscope oscilloscope

VBB

VCC

Product data sheet Rev. 04 — 11 December 2009 10 of 14

NXP Semiconductors PBSS4160DS

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

9. Package outline

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

[2] T1: normal taping

[3] T2: reverse taping

Fig 15. Package outline SOT457 (SC-74)

04-11-08Dimensions in mm

3.0

2.5

1.7

1.3

3.1

2.7

pin 1 index

1.9

0.26

0.10

0.40

0.25

0.95

1.1

0.9

0.6

0.2

132

Table 8. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packing quantity

3000 10000

PBSS4160DS SOT457 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135

4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165

Product data sheet Rev. 04 — 11 December 2009 11 of 14

NXP Semiconductors PBSS4160DS

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

11. Soldering

Dimensions in mm

Fig 16. Reflow soldering foo tprin t

Dimensions in mm

Fig 17. Wave soldering footprint

solder lands

solder resist

occupied area

solder paste

0.95

2.825 0.45 0.55

1.60

1.95

3.45

1.70

3.10

3.20

3.30

msc422

1.40

4.30

5.30

0.45

msc423

1.45 4.45

5.05

solder lands

solder resist

occupied area

Product data sheet Rev. 04 — 11 December 2009 12 of 14

NXP Semiconductors PBSS4160DS

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

12. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PBSS4160DS_4 20091211 Product data sheet - PBSS4160DS_3

Modifications: •This data sheet was changed to reflec t the new company name NXP Semiconductors,

including new legal definitions and disclaimers. No changes were made to the technica l

content.

•Figure 17 “Wave soldering footprint”: updated

PBSS4160DS_3 20060209 Product data sheet - PBSS4160DS_2

PBSS4160DS_2 20050627 Product data sheet - PBSS4160DS_1

PBSS4160DS_1 20040426 Objective data sheet - -

Product data sheet Rev. 04 — 11 December 2009 13 of 14

NXP Semiconductors PBSS4160DS

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warrant ies as to t he accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short dat a sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full dat a

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conf lict with the short data sheet, the

full data sheet shall pre va il.

13.3 Disclaimers

General — In formation in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give an y represent ations or

warranties, expressed or impli ed, as to the accuracy or completeness of such

information and shall have no liability for th e co nsequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors products are no t designed,

authorized or warranted to be suitable for use in medical, milit ary, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applic ations that are described herein for any of these

products are for il lustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ra tings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other co nditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may af fect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conflict between inf ormation in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Not hing in this document may be interpret ed or

construed as an of fer t o sell product s that is open for accept ance or the gr ant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property right s.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All refe renced brands, produc t names, service names and trademarks

are the property of their respective ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contain s data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

NXP Semiconductors PBSS4160DS

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 11 December 2009

Document identifier: PBSS4160DS_4

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

10 Packing information . . . . . . . . . . . . . . . . . . . . 10

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

14 Contact information. . . . . . . . . . . . . . . . . . . . . 13

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14