Order this document by BD241C/D SEMICONDUCTOR TECHNICAL DATA . . . designed for use in general purpose amplifier and switching applications. * Collector-Emitter Saturation Voltage -- VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc * Collector-Emitter Sustaining Voltage -- VCEO(sus) = 80 Vdc (Min.) BD242B VCEO(sus) = 100 Vdc (Min.) BD241C, BD242C * High Current Gain -- Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc * Compact TO-220 AB Package *Motorola Preferred Device 3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80, 100 VOLTS 40 WATTS IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIII IIII IIIIIII III IIII IIII IIIIIIIIIIII IIII IIIIIII III IIIIIII III IIIIIIIIIIII IIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIII IIIIIII III IIIIIII III IIIIIIIIIIII IIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIII IIIII IIIIII III MAXIMUM RATINGS Symbol BD242B BD241C BD242C Unit Collector-Emitter Voltage VCEO 80 100 Vdc Collector-Emitter Voltage VCES 90 115 Vdc Rating Emitter-Base Voltage VEB 5.0 Vdc Collector Current -- Continuous Peak IC 3.0 5.0 Adc Adc Base Current IB 1.0 Adc Total Device Dissipation @ TC = 25_C Derate above 25_C PD 40 0.32 Watts W/_C TJ, Tstg - 65 to + 150 _C Operating and Storage Junction Temperature Range CASE 221A-09 TO-220AB THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 62.5 _C/W Thermal Resistance, Junction to Case RJC 3.125 _C/W PD, POWER DISSIPATION (WATTS) 40 30 20 10 0 0 20 40 60 80 100 120 140 160 TC, CASE TEMPERATURE (C) Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. Motorola, Inc. 1998 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIII III IIIIIIIIIIIIIIIIIIIIIII IIII IIII v v IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage1 (IC = 30 mAdc, IB = 0) VCEO BD242B BD241C, BD242C Collector Cutoff Current (VCE = 60 Vdc, IB = 0) Vdc 80 100 ICEO 0.3 mAdc BD241C, BD242B, BD242C Collector Cutoff Current (VCE = 80 Vdc, VEB = 0) (VCE = 100 Vdc, VEB = 0) Adc ICES BD242B BD241C, BD242C Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) 200 200 IEBO mAdc 1.0 ON CHARACTERISTICS1 DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc) (IC = 3.0 Adc, VCE = 4.0 Vdc) hFE 25 10 Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 600 Adc) VCE(sat) Base-Emitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc) VBE(on) Vdc 1.2 Vdc 1.8 DYNAMIC CHARACTERISTICS Current Gain - Bandwidth Product2 (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz) fT Small-Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz) hfe 1 Pulse Test: Pulse Width 2 fT = |hfe| * ftest. MHz 3.0 20 300 s, Duty Cycle 2.0%. 2.0 APPROX + 11 V VCC Vin Cjd Vin 0 VEB(off) RL t1 APPROX + 11 V t3 RK % Ceb v t t t - 4.0 V t1 7.0 ns 100 t2 500 s t3 15 ns Vin t2 TURN-OFF PULSE [ DUTY CYCLE 2.0% APPROX - 9.0 V Figure 2. Switching Time Equivalent Circuit 2 IC/IB = 10 TJ = 25C 1.0 0.7 0.5 SCOPE t, TIME ( s) TURN-ON PULSE 0.3 tr @ VCC = 30 V tr @ VCC = 10 V 0.1 0.07 0.05 0.03 0.02 0.03 td @ VBE(off) = 2.0 V 0.05 0.07 0.1 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) Figure 3. Turn-On Time Motorola Bipolar Power Transistor Device Data 3.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 D = 0.5 0.2 0.2 0.1 0.1 0.07 0.05 P(pk) ZJC (t) = r(t) RJC RJC = 3.125C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) ZJC(t) DUTY CYCLE, D = t1/t2 0.05 0.02 0.03 0.02 0.01 0.01 0.01 SINGLE PULSE 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 20 50 100 200 500 1.0 k VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 4. Thermal Response 10 5.0 1.0 ms There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C, TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100 s 5.0 ms 2.0 1.0 SECOND BREAKDOWN LIMITED @ TJ 150C THERMAL LIMITATION @ TC = 25C BONDING WIRE LIMITED v 0.5 0.2 CURVES APPLY BELOW RATED VCEO 0.1 5.0 v BD242B BD241C, BD242C 10 20 50 IC, COLLECTOR CURRENT (AMP) 100 Figure 5. Active Region Safe Operating Area 1.0 0.7 0.5 0.3 0.2 ts tf @ VCC = 30 V tf @ VCC = 10 V 0.1 TJ = + 25C 200 100 Ceb 70 50 0.07 0.05 0.03 0.03 300 IB1 = IB2 IC/IB = 10 ts = ts - 1/8 tf TJ = 25C CAPACITANCE (pF) t, TIME ( s) 3.0 2.0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) Figure 6. Turn-Off Time Motorola Bipolar Power Transistor Device Data 2.0 3.0 30 0.1 Ccb 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 30 40 Figure 7. Capacitance 3 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 hFE, DC CURRENT GAIN 300 100 70 VCE = 2.0 V TJ = 150C 25C - 55C 50 30 10 7.0 5.0 0.03 0.05 0.07 0.1 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 TJ = 25C 1.6 1.2 IC = 0.3 A 0.4 0 3.0 1.0 V, TEMPERATURE COEFFICIENTS (mV/C) 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 2.0 V 0.4 VCE(sat) @ IC/IB = 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT ( A) 500 + 1.5 + 1.0 *VC FOR VCE(sat) + 0.5 0 - 0.5 - 1.0 - 1.5 VB FOR VBE - 2.0 - 2.5 0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 Figure 10. "On" Voltages Figure 11. Temperature Coefficients 102 VCE = 30 V 101 TJ = 150C 100 100C REVERSE FORWARD 25C 10- 3 - 0.4 - 0.3 - 0.2 - 0.1 ICES 0 + 0.1 + 0.2 + 0.3 1000 *APPLIES FOR IC/IB 5.0 TJ = - 65C TO + 150C + 2.0 IC, COLLECTOR CURRENT (AMP) 10-1 4 10 20 50 100 200 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (AMPS) 103 10- 2 5.0 + 2.5 + 0.4 + 0.5 + 0.6 RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) V, VOLTAGE (VOLTS) TJ = 25C 0 0.003 0.005 0.01 0.020.03 0.05 2.0 Figure 9. Collector Saturation Region 1.4 0.2 3.0 A 0.8 Figure 8. DC Current Gain 1.2 1.0 A 2.0 3.0 107 VCE = 30 V IC = 10 x ICES 106 105 IC ICES IC = 2 x ICES 104 103 102 (TYPICAL ICES VALUES OBTAINED FROM FIGURE 12) 20 40 60 80 100 120 140 160 VBE, BASE-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (C) Figure 12. Collector Cut-Off Region Figure 13. Effects of Base-Emitter Resistance Motorola Bipolar Power Transistor Device Data PACKAGE DIMENSIONS -T- SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N STYLE 1: PIN 1. 2. 3. 4. INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 BASE COLLECTOR EMITTER COLLECTOR CASE 221A-09 TO-220AB ISSUE Z Motorola Bipolar Power Transistor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. 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