SILICON POWER NPN TRANSISTOR 2N6673 * High Voltage * Hermetic Low Profile TO3 Metal Package. * Designed For Power Switching and Linear Applications * Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VCBO VCEX VCEO VEBO IC IB PD PD TJ Tstg Collector - Base Voltage Collector - Emitter Voltage Collector - Emitter Voltage Emitter - Base Voltage Continuous Collector Current Base Current TA = 25C Total Power Dissipation at Derate Above 25C TC = 25C Total Power Dissipation at Derate Above 25C Junction Temperature Range Storage Temperature Range 650V 650V 400V 8V 8A 4A 6W 0.0343 W/C 150W 0.857 W/C -65 to +150C -65 to +150C THERMAL PROPERTIES Symbols Parameters RJC Thermal Resistance, Junction To Case Max. Units 1.17 C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 9396 Issue 1 Page 1 of 3 SILICON POWER NPN TRANSISTOR 2N6673 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise stated) Symbols Parameters Test Conditions V(BR)CEO Collector-Emitter Breakdown Voltage IC = 200mA ICEX Collector-Emitter Cut-Off Current ICBO Collector Cut-Off Current IEBO Emitter Cut-Off Current (1) hFE Forward-current transfer ratio (1) VCE = 650V VCE(sat) VBE(sat) (1) Max. 400 Units V 0.1 TA = 125C 1.0 VCB = 650V IE = 0 1.0 VEB = -8V IC = 0 2 IC = 1.0A VCE =3V 10 80 IC = 5A VCE = 3V 10 40 TA = -55C 4 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Typ VBE = -1.5V IC = 5A (1) Min. IB = 1.0A mA - 1.0 TA = 125C 2 IC = 8A IB = 4A 2 IC = 5A IB = 1.0A 1.6 IC = 200mA VCE = 10V V DYNAMIC CHARACTERISTICS |hfe| Magnitude of small signal short circuit forward current transfer ratio Cobo Output Capacitance td Delay time tr Rise Time VCC = 125V ts Storage Time IB1 = -IB2 = -1.0A tf Fall Time 2 3 - f = 5 MHz VCB = 10V IE = 0 300 f = 1.0MHz pF 0.1 IC = 5.0A 0.59 s 4 0.42 Notes (1) Pulse Width 300us, 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 9396 Issue 1 Page 2 of 3 SILICON POWER NPN TRANSISTOR 2N6673 MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO3 (TO-204AA) METAL PACKAGE Underside View Pin 1 - Base Pin 2 - Emitter Case - Collector Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com Document Number 9396 Issue 1 Page 3 of 3