SILICON POWER
NPN TRANSISTOR
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Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 9396
Issue 1
Page 1 of 3
2N6673
• High Voltage
• Hermetic Low Profile TO3 Metal Package.
• Designed For Power Switching
and Linear Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO Collector – Base Voltage 650V
VCEX Collector – Emitter Voltage 650V
VCEO Collector – Emitter Voltage 400V
VEBO Emitter – Base Voltage 8V
IC Continuous Collector Current 8A
IB Base Current 4A
PD Total Power Dissipation at TA = 25°C 6W
Derate Above 25°C 0.0343 W/°C
PD Total Power Dissipation at TC = 25°C 150W
Derate Above 25°C 0.857 W/°C
TJ Junction Temperature Range -65 to +150°C
Tstg Storage Temperature Range -65 to +150°C
THERMAL PROPERTIES
Symbols Parameters Max. Units
RθJC
Thermal Resistance, Junction To Case 1.17 °C/W
SILICON POWER NPN
TRANSISTOR
2N6673
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 9396
Issue 1
Page 2 of 3
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ Max.
Units
V(BR)CEO
(1)
Collector-Emitter
Breakdown Voltage IC = 200mA 400 V
VCE = 650V VBE = -1.5V 0.1
ICEX Collector-Emitter Cut-Off
Current TA = 125°C 1.0
ICBO Collector Cut-Off Current VCB = 650V IE = 0 1.0
IEBO Emitter Cut-Off Current VEB = -8V IC = 0 2
mA
IC = 1.0A VCE =3V 10 80
IC = 5A VCE = 3V 10 40
hFE
(1)
Forward-current transfer
ratio
TA = -55°C 4
-
IC = 5A IB = 1.0A 1.0
TA = 125°C 2
VCE(sat)
(1)
Collector-Emitter Saturation
Voltage
IC = 8A IB = 4A 2
VBE(sat)
(1)
Base-Emitter Saturation
Voltage IC = 5A IB = 1.0A 1.6
V
DYNAMIC CHARACTERISTICS
IC = 200mA VCE = 10V
|hfe|
Magnitude of small signal
short circuit forward current
transfer ratio f = 5 MHz
2 3 -
VCB = 10V IE = 0
Cobo Output Capacitance f = 1.0MHz 300 pF
td Delay time 0.1
tr Rise Time 0.59
ts Storage Time 4
tf Fall Time
VCC = 125V IC = 5.0A
IB1 = -IB2 = -1.0A
0.42
µs
Notes
NotesNotes
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
SILICON POWER NPN
TRANSISTOR
2N6673
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 9396
Issue 1
Page 3 of 3
MECHANICAL DATA
Dimensions in mm (inches)
TO3 (TO
-
204AA) METAL PACKAGE
Underside View
Pin 1 - Base Pin 2 - Emitter Case - Collector
1 2
3
(case)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
38.61 (1.52)
39.12 (1.54)
29.9 (1.177)
30.4 (1.197)
16.64 (0.655)
17.15 (0.675)
3.84 (0.151)
4.09 (0.161)
0.97 (0.060)
1.10 (0.043)
7.92 (0.312)
12.70 (0.50)
22.23
(0.875)
max.
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
