NPN SWITCHING
TRANSISTOR
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Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 4141
Issue 2
Page 1 of 3
2N2369ACSM
• Silicon Planer Epitaxial NPN Transistor
• Hermetic Ceramic Surface Mount Package
• Designed For High Speed Switching Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated)
VCBO Collector – Base Voltage 40V
VCEO Collector – Emitter Voltage 15V
VCES Collector – Emitter Voltage 40V
VEBO Emitter – Base Voltage 4.5V
IC Continuous Collector Current 200mA
PD Total Power Dissipation at TA = 25°C 360mW
Derate Above 25°C 2.06mW/°C
PD Total Power Dissipation at TSP = 125°C 360mW
Derate Above 125°C 4.80mW/°C
TJ Junction Temperature Range -65 to +200°C
Tstg Storage Temperature Range -65 to +200°C
THERMAL PROPERTIES
Symbols Parameters Min. Typ. Max. Units
RθJA Thermal Resistance, Junction To Ambient 486 °C/W
RθJSP Thermal Resistance, Junction To Solder Point 208.3 °C/W
NPN SWITCHING
TRANSISTOR
2N2369ACSM
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 4141
Issue 2
Page 2 of 3
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ Max.
Units
V(BR)CEO
(1)
Collector-Emitter
Breakdown Voltage IC = 10mA IB = 0 15 V
ICES Collector-Cut-Off Current VCE = 20V IB = 0 0.4
VCB = 40V IE = 0 10
VCB = 32V IE = 0 0.2
VCB = 20V IE = 0
ICBO Collector-Cut-Off Current
TA = 150°C
(2)
30
VEB = 4.5V IC = 0 10
IEBO Emitter-Cut-Off Current VEB = 4V IC = 0 0.25
VCE = 10V VBE = -0.25V
ICEX Collector Cut-Off Current TA = 125°C 30
µA
IC = 10mA VCE = 0.35V 40 120
IC = 30mA VCE = 0.4V 30 120
IC = 10mA VCE = 1.0V 40 120
TA = -55°C 20
hFE
(1)
Forward-current transfer
ratio
IC = 100mA VCE = 1.0V 20 120
IC = 10mA IB = 1.0mA 0.2
TA = 125°C 0.3
IC = 30mA IB = 3mA 0.25
VCE(sat)
(1)
Collector-Emitter Saturation
Voltage
IC = 100mA IB = 10mA 0.45
IC = 10mA IB = 1.0mA 0.7 0.85
TA = 125°C 0.59
TA = -55°C 1.02
IC = 30mA IB = 3mA 0.9
VBE(sat)
(1)
Base-Emitter Saturation
Voltage
IC = 100mA IB = 10mA 0.8 1.2
V
Notes
NotesNotes
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
(2) By design only, not a production test.
NPN SWITCHING
TRANSISTOR
2N2369ACSM
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 4141
Issue 2
Page 3 of 3
DYNAMIC CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ Max.
Units
IC = 10mA VCE = 10V
| hfe | Small signal forward-current
transfer ratio f = 100MHz
5 10
VCB = 5V IE = 0
Cobo Output Capacitance f = 1.0MHz 4
VEB = 0.5V IC = 0
Cibo Input Capacitance f = 1.0MHz 5
pF
ts Storage Time IC = 10mA IB1 = IB2 = 10mA 13
IC = 10mA VCC = 3V
ton Turn-On Time IB1 = 3mA 12
IC = 10mA VCC = 3V
toff Turn-Off Time IB1 = 3mA IB2 = -1.5mA 18
ns
MECHANICAL DATA
Dimensions in mm (inches)
LCC1
Underside View
Pad 1 - Base Pad 2 - Emitter Pad 3 - Collector
2 1
0.51 ± 0.10
(0.02 ± 0.004) 0.31
(0.012)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2.54 ± 0.13
(0.10 ± 0.005)
0.76 ± 0.15
(0.03 ± 0.006)
1.02 ± 0.10
(0.04 ± 0.004)
1.40
(0.055)
max.
A
0.31
(0.012) rad.
rad.
A =
3