KSA643 KSA643 Low Frequency Power Amplifier * Collector Power Dissipation: PC =500mW * Complement to KSD261 * Suffix "-C" means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Ratings -40 Units V V VCEO Collector-Emitter Voltage -20 VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -500 mA ICP * Collector Current (pulse) -700 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C * PW10ms, Duty cycle50% Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC= -100A, IE=0 Min. -40 BVCEO Collector-Emitter Breakdown Voltage IC= -10mA, IB=0 -20 BVEBO Emitter-Base Breakdown Voltage IE= -10A, IC=0 -5 ICBO Collector Cut-off Current VCB= -25V, IE=0 Typ. Max. Units V V V -200 nA -200 nA IEBO Emitter Cut-off Current VEB= -3V, lC=0 hFE * DC Current Gain VCE= -1V, IC= -100mA VCE(sat) * Collector-Emitter Saturation Voltage IC= -500mA, IB= -50mA -0.3 - 0.4 V VBE(sat) * Base-Emitter Saturation Voltage IC= -500mA, IB= -50mA -1.0 -1.3 V 40 400 * Pulse Test: PW350s, Duty cycle2% hFE Classification Classification R O Y G hFE 40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400 (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSA643 Typical Characteristics 1000 -500 VCE = -1V IB = -1.6mA -400 IB = -1.4mA -350 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT -450 IB = -1.2mA IB = -1.0mA -300 IB = -0.8mA -250 IB = -0.6mA -200 -150 IB = -0.4mA -100 100 IB = -0.2mA -50 10 -1 0 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -10 VCE[V], COLLECTOR-EMITTER VOLTAGE -1000 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain -1000 -10 IC = 10 IB VCE = -1V IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -100 V BE(sat) -1 -0.1 VCE(sat) -0.01 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -100 -10 -1 0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 VBE[V], BASE-EMITTER VOLTAGE Figure 4. Base-Emitter On Voltage 100 Cob [pF], CAPACITANCE IE = 0 f = 100KHz 10 1 -1 -10 VCB [V], COLLECTOR-BASE VOLTAGE Figure 5. Collector Output Capacitance (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSA643 Package Demensions TO-92 +0.25 4.58 0.20 4.58 -0.15 0.10 14.47 0.40 0.46 1.27TYP [1.27 0.20] 1.27TYP [1.27 0.20] 0.20 (0.25) +0.10 0.38 -0.05 1.02 0.10 3.86MAX 3.60 +0.10 0.38 -0.05 (R2.29) Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST(R) OPTOPLANARTM ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2001 Fairchild Semiconductor Corporation Rev. H3